Wafer holding device and semiconductor device manufacturing method

Abstract

To surely rotate a semiconductor wafer held by a bernoulli chuck.SOLUTION: A wafer holding device includes: a chuck 2 for holding a semiconductor wafer 5; and a rotational mechanism 3 for rotating the chuck 2. In an opposite surface 2a opposite to the semiconductor wafer of the chuck 2, a plurality of pads 23 and a plurality of supporting parts 25 are formed. The chuck 2 holds the semiconductor wafer 5 by ejecting a gas from each of the plurality of pads 23. The plurality of supporting parts 25 are formed at a position deviated from a center of an opposite surface 2a of the chuck 2. When the chuck 2 holds the semiconductor wafer 5, the plurality of pads 23 does not contact to the semiconductor wafer, and the plurality of supporting parts 25 contact to a main surface 5a of the semiconductor wafer 5.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a wafer holding device and a method for manufacturing a semiconductor device, and more particularly to a technique that is effective when applied to a semiconductor device manufacturing method including an OCR process for a semiconductor wafer. [Background technology]

[0002] Japanese Patent Application Laid-Open No. 2012-195346 (Patent Document 1) describes a technique relating to a wet processing apparatus that uses a Bernoulli chuck. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-195346 Summary of the Invention [Problem to be solved by the invention]

[0004] A Bernoulli chuck is suitable for transporting semiconductor wafers that have a large diameter and a thin thickness. However, it is difficult to rotate a semiconductor wafer held by a Bernoulli chuck. For this reason, in order to rotate a semiconductor wafer, it is considered to re-hold the semiconductor wafer transported by the Bernoulli chuck using a contact-type chuck (vacuum chuck) other than a Bernoulli chuck. However, in this case, there is a concern that the time required for the process involving rotation of the semiconductor wafer may increase or that the semiconductor wafer may be damaged (e.g., chipped) when the semiconductor wafer is re-held from the Bernoulli chuck to another chuck. For this reason, it is desirable not only to transport a semiconductor wafer by a Bernoulli chuck but also to be able to rotate the semiconductor wafer held by the Bernoulli chuck.

[0005] Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0006] According to one embodiment, a wafer holding device includes a Bernoulli chuck having first and second surfaces opposite each other, and a rotation mechanism for rotating the Bernoulli chuck. The first surface of the Bernoulli chuck has a plurality of pads and a plurality of support portions formed thereon. The Bernoulli chuck holds a semiconductor wafer by ejecting gas from each of the pads. The support portions are formed at positions offset from the center of the first surface of the Bernoulli chuck, so that when the Bernoulli chuck holds a semiconductor wafer, the pads do not contact the semiconductor wafer and the support portions contact a main surface of the semiconductor wafer.

[0007] According to one embodiment, a method for manufacturing a semiconductor device includes: (a) detecting a notch or an orientation flat of a semiconductor wafer while the semiconductor wafer is held by a Bernoulli chuck; and (b) rotating the Bernoulli chuck after the step (a), thereby rotating the semiconductor wafer held by the Bernoulli chuck together with the Bernoulli chuck. The method for manufacturing a semiconductor device further includes: (c) reading identification information provided on the semiconductor wafer while the semiconductor wafer is held by the Bernoulli chuck after the step (b). A first surface of the Bernoulli chuck facing the semiconductor wafer has a plurality of pads and a plurality of support portions formed thereon. The plurality of support portions are formed at positions offset from the center of the first surface of the Bernoulli chuck. In steps (a), (b), and (c), the semiconductor wafer is sucked toward the first surface of the Bernoulli chuck by ejecting gas from each of the pads, and the pads do not contact the semiconductor wafer, but the support parts hold the semiconductor wafer in contact with the main surface of the semiconductor wafer. [Effects of the Invention]

[0008] According to one embodiment, a semiconductor wafer held by a Bernoulli chuck can be rotated accurately. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram showing a wafer holding device according to an embodiment. [Figure 2] FIG. 2 is a plan view of a chuck that constitutes the wafer holding apparatus of FIG. [Figure 3] 3 is a partially enlarged plan view of a portion of the chuck shown in FIG. 2. FIG. [Figure 4] FIG. 3 is a cross-sectional view of a main part of the chuck shown in FIG. 2. [Figure 5] FIG. 2 is a cross-sectional view of a main part of the chuck in a state where a semiconductor wafer is held therein. [Figure 6] FIG. 10 is a schematic view showing a wafer holding device during an OCR process. [Figure 7] FIG. 2 is a plan view of a semiconductor wafer held by a chuck. [Figure 8] FIG. 10 is an explanatory diagram for explaining an OCR process. [Figure 9] FIG. 10 is a cross-sectional view of a main part of a semiconductor device during a manufacturing process following an OCR process. [Figure 10] 10 is a cross-sectional view of a main part of the semiconductor device during the manufacturing process following FIG. 9. [Figure 11] 11 is a cross-sectional view of a main part of the semiconductor device during the manufacturing process following FIG. 10. [Figure 12] 12 is a cross-sectional view of a main part of the semiconductor device during the manufacturing process following FIG. 11. [Figure 13] 13 is a cross-sectional view of a main part of the semiconductor device during the manufacturing process following FIG. 12. [Figure 14] 14 is a cross-sectional view of a main part of the semiconductor device during the manufacturing process following FIG. 13. [Figure 15] FIG. 10 is a schematic view showing a wafer holding device of a modified example when an OCR process is being performed. [Figure 16] FIG. 10 is a schematic view showing a wafer holding device of a modified example when an OCR process is being performed. DETAILED DESCRIPTION OF THE INVENTION

[0010] In the following embodiments, the description will be divided into multiple sections or embodiments for convenience, as necessary. However, unless otherwise specified, they are not unrelated to one another, and one is a partial or complete modification, detail, supplementary explanation, etc., of the other. Furthermore, in the following embodiments, when the number of elements (including the number, numerical value, amount, range, etc.) is mentioned, it is not limited to the specific number, and may be more or less than the specific number, unless otherwise specified or clearly limited to a specific number in principle. Furthermore, in the following embodiments, it goes without saying that the components (including element steps, etc.) are not necessarily essential, unless otherwise specified or clearly considered essential in principle. Similarly, in the following embodiments, when the shape, positional relationship, etc. of components, etc. are mentioned, it is intended to include those that are substantially similar to or similar to the shape, etc., unless otherwise specified or clearly considered not to be essential in principle. The same applies to the above numerical values ​​and ranges.

[0011] Hereinafter, embodiments will be described in detail with reference to the drawings. In all drawings for explaining the embodiments, components having the same functions are designated by the same reference numerals, and repeated explanations thereof will be omitted. In the following embodiments, explanations of the same or similar parts will not be repeated unless particularly necessary.

[0012] In the drawings used in the embodiments, hatching may be omitted even in cross-sectional views to make the drawings easier to see, and hatching may be added even in plan views to make the drawings easier to see.

[0013] <Background of the review> A Bernoulli chuck is suitable for transporting semiconductor wafers that are large in diameter and thin in thickness. Semiconductor wafers that are large in diameter and thin in thickness are prone to warping. However, when a Bernoulli chuck is used, the semiconductor wafer does not need to be tightly attached to the Bernoulli chuck, so the semiconductor wafer can be held in the Bernoulli chuck even if the semiconductor wafer is warped. However, when a Bernoulli chuck is used, it is difficult to rotate the semiconductor wafer held in the Bernoulli chuck. This is because, when a Bernoulli chuck is used, the semiconductor wafer and the Bernoulli chuck do not come into contact with each other, making it difficult to apply a rotational force to the semiconductor wafer held in the Bernoulli chuck.

[0014] For this reason, when performing an OCR process on a semiconductor wafer, which requires the semiconductor wafer to be rotated, it is possible to perform the OCR process, which involves rotating the semiconductor wafer, by re-holding the semiconductor wafer, which has been transferred using a Bernoulli chuck, with a contact-type chuck (vacuum chuck) other than a Bernoulli chuck. However, in this case, there is a concern that the time required for the OCR process may be extended or that the semiconductor wafer may be damaged (e.g., chipped) due to the need to re-hold the semiconductor wafer, which has been transferred using a Bernoulli chuck, with a contact-type chuck other than a Bernoulli chuck. Furthermore, semiconductor wafers with large diameters and thin thicknesses are prone to warping. If a contact-type chuck other than a Bernoulli chuck is used in the OCR process, it is difficult to hold a warped semiconductor wafer with the chuck, making process management of the OCR process difficult.

[0015] Therefore, the present inventors have considered adopting a Bernoulli chuck as a wafer holding device in, for example, a character recognition device used in an OCR process, and making it possible to accurately rotate a semiconductor wafer even when the semiconductor wafer is held by the Bernoulli chuck.

[0016] <Character recognition device> FIG. 1 is a schematic diagram (cross-sectional view) showing a character recognition device 1 as a wafer holding device of this embodiment. FIG. 2 is a plan view of the chuck 2 of the character recognition device 1 when viewed from the direction of arrow YG1 in FIG. 1. FIG. 3 is a partially enlarged plan view of a portion of FIG. 2. FIG. 4 is a cross-sectional view of a main portion of the chuck 2 taken along line AA in FIG. 3. FIG. 5 is also a cross-sectional view of a main portion of the chuck 2 taken from the same position as FIG. 4, but shows a cross-sectional view of the chuck 2 holding a semiconductor wafer 5. FIG. 6 is a schematic diagram (cross-sectional view) showing the character recognition device 1 during an OCR process. In FIG. 6, a semiconductor wafer 5 is held by the chuck 2 constituting the character recognition device 1. FIG. 7 is a plan view of the semiconductor wafer 5 held by the chuck 2 when viewed from the direction of arrow YG2 in FIG. 6. In FIG. 7, for ease of understanding, the positions of the chuck 2, the presence sensor 21, the pads 23, and the support portion 25 are indicated by dotted lines when viewed through the semiconductor wafer 5.

[0017] 1 to 7, character recognition device (wafer holding device) 1 has a chuck (Bernoulli chuck, wafer chuck, wafer holding unit) 2 for holding a semiconductor wafer (semiconductor substrate) 5, a rotation mechanism (rotation device) 3 for rotating chuck 2, and an arm unit 4 that enables movement of chuck 2 and rotation mechanism 3. Character recognition device 1 can function as a wafer holding device that is capable of holding semiconductor wafer 5 and rotating the semiconductor wafer 5 it holds.

[0018] The chuck 2 is a Bernoulli chuck. The chuck 2 has a surface 2a (hereinafter referred to as the facing surface 2a) that faces the semiconductor wafer 5 when the semiconductor wafer 5 is held thereon, and a surface 2b opposite the facing surface 2a. The facing surface 2a of the chuck 2 is approximately perpendicular to the direction of the rotation axis when the chuck 2 rotates. The semiconductor wafer 5 has main surfaces 5a and 5b located on opposite sides to each other, and a side surface 5c connecting the main surfaces 5a and 5b. When the chuck 2 holds the semiconductor wafer 5, the facing surface 2a of the chuck 2 and the main surface 5a of the semiconductor wafer 5 face each other. Therefore, the facing surface 2a of the chuck 2 can also be considered as the surface that holds the semiconductor wafer 5 (wafer holding surface).

[0019] A rotation mechanism 3 is disposed on the surface 2b of the chuck 2. The rotation mechanism 3 has the function of rotating the chuck 2 and is, for example, a rotary actuator. The rotation mechanism 3 has a main body 3a and a rotation shaft 3b, and the chuck 2 is attached to the rotation shaft 3b of the rotation mechanism 3. The main body 3a of the rotation mechanism 3 is attached to an arm 4. The rotation mechanism 3 can rotate the rotation shaft 3b relative to the main body 3a, and therefore the chuck 2 attached to the rotation shaft 3b can also rotate together with the rotation shaft 3b. The arm 4 can move the chuck 2 and the rotation mechanism 3 horizontally and vertically by moving the arm 4 horizontally and vertically.

[0020] The character recognition device 1 also has a control unit 6 that controls the operation of the character recognition device 1. The control unit 6 includes, for example, a semiconductor device for control (processor) and a semiconductor device for storage (memory).

[0021] The chuck 2 is rotatably attached to the arm unit 4. Specifically, a hollow shaft (hollow path) 11 is connected to the chuck 2, and the hollow shaft 11 is connected to the arm unit 4 via a slip ring 12. The rotation mechanism 3 is disposed around and surrounds the hollow shaft 11. The hollow shaft 11 rotates together with the rotation axis 3b and the chuck 2. The hollow shaft 11 has a cylindrical shape and is hollow inside. A pipe 13 for supplying gas to the chuck 2 passes through the hollow shaft 11 and further through the slip ring 12, and one end of the pipe 13 is connected to a pipe 14 inside the arm unit 4 via a rotary joint 15. Because the rotary joint 15 is interposed between the pipe 13 and the pipe 14 inside the arm unit 4, gas can be supplied from the pipe 14 inside the arm unit 4 to the pipe 13 even when the pipe 13 rotates in conjunction with the rotation of the chuck unit 2.

[0022] The chuck 2 has a presence sensor 21. The presence sensor 21 is provided on the facing surface 2a of the chuck 2. The presence sensor 21 can detect whether or not a semiconductor wafer 5 is present at a position facing the facing surface 2a of the chuck 2.

[0023] Wiring 16 electrically connected to the inventory sensor 21 passes through the chuck 2 and the hollow shaft 11, and is electrically connected to wiring 17 provided on the arm 4 via a slip ring 12. The slip ring 12 is disposed between the hollow shaft 11 and the arm 4. Even when the chuck 2 and the hollow shaft 11 rotate, the electrical connection between the wiring 16 and the wiring 17 via the slip ring 12 is maintained.

[0024] The pipe 13 is connected to a flow path (gas flow path) 22 inside the chuck 2, and gas supplied from the pipe 14 inside the arm part 4 to the pipe 13 is supplied to the flow path 22 inside the chuck 2. The gas supplied from the pipe 14 inside the arm part 4 to the flow path 22 of the chuck 2 via the pipe 13 is preferably air, and more preferably compressed air.

[0025] The opposing surface 2a of the chuck 2 is provided with a plurality of pads (cyclone pads) 23 and a plurality of support portions (protrusions, holding portions) 25. Each pad 23 has the function of lifting (suctioning) and holding the semiconductor wafer 5 by ejecting gas. The support portions 25 are portions that come into contact with the main surface 5a of the semiconductor wafer 5 when the chuck 2 holds the semiconductor wafer 5.

[0026] Each pad 23 has a nozzle 24 which is a gas outlet, and can generate a swirling flow by ejecting gas from the nozzle 24. Specifically, each pad 23 has a cylindrical shape, and the nozzle 24 is provided on the inner side surface (inner wall) or inner bottom surface of the cylindrical shape. The nozzle 24 is formed, for example, in an annular shape. The gas ejected from the nozzle 24 is gas supplied from the pipe 13 to the flow path 22, and is preferably air, and more preferably compressed air.

[0027] Gas supplied from the piping 13 to the flow path 22 in the chuck 2 passes through the flow path 22 and is ejected from the nozzles 24 of each pad 23. The gas ejected from the nozzles 24 of each pad 23 forms a swirling flow inside the cylindrical shape of the pad 23, generating a vacuum (the so-called cyclone effect). The gas ejected from the nozzles 24 of each pad 23 is released into the atmosphere from between the facing surface 2 a of the chuck 2 and the semiconductor wafer 5. As a result, a gas layer is generated between the pad 23 and the semiconductor wafer 5, and the semiconductor wafer 5 can be pulled up toward the pad 23 and held thereon without coming into contact with the pad 23. Due to the cyclone effect and Bernoulli effect caused by the gas ejected from the pad 23, the semiconductor wafer 5 is pulled up (sucked in) toward the facing surface 2 a of the chuck 2 and held thereon.

[0028] The support portion 25 provided on the facing surface 2a of the chuck 2 protrudes from the facing surface 2a of the chuck 2. That is, the support portion 25 is a protrusion formed on the facing surface 2a of the chuck 2. The height H1 of the support portion 25 is higher than the height H2 of the pad 23 (H1>H2, see FIG. 4). That is, the height position of the tip of the support portion 25 is higher than the height position of the top of the pad 23. Here, when the chuck 2 holds the semiconductor wafer 5, the side approaching the semiconductor wafer 5 is considered to be higher in height, and the side away from the semiconductor wafer 5 is considered to be lower in height.

[0029] 5 and 6, while the chuck 2 holds the semiconductor wafer 5 by ejecting gas from the nozzles 24 of the pads 23, the pads 23 do not come into contact with the semiconductor wafer 5, but the tip of each support portion 25 comes into contact with the semiconductor wafer 5. For this reason, the height H1 of each support portion 25 is set so that the tip of each support portion 25 can come into contact with the semiconductor wafer 5 while the chuck 2 holds the semiconductor wafer 5 by ejecting gas from the nozzles 24 of the pads 23.

[0030] While the chuck 2 holds the semiconductor wafer 5 by ejecting gas from the nozzles 24 of the pads 23, the pads 23 do not come into contact with the semiconductor wafer 5, but the tip of each support portion 25 comes into contact with the main surface 5a of the semiconductor wafer 5. By bringing the tip of each support portion 25 into contact with the main surface 5a of the semiconductor wafer 5, when the rotation mechanism 3 rotates the chuck 2, the support portion 25 in contact with the main surface 5a of the semiconductor wafer 5 applies a rotational force to the semiconductor wafer 5, thereby rotating the semiconductor wafer 5 together with the chuck 2. On the other hand, because the pads 23 do not come into contact with the semiconductor wafer 5, the semiconductor wafer 5 does not obstruct the ejection of gas from the nozzles 24 of the pads 23.

[0031] Therefore, by ejecting gas from the nozzles 24 of the pads 23 while the main surface 5a of the semiconductor wafer 5 to be held faces the opposing surface 2a of the chuck 2, the semiconductor wafer 5 is pulled up in a direction approaching the opposing surface 2a of the chuck 2, and the main surface 5a of the semiconductor wafer 5 comes into contact with the tip of the support portion 25, and the semiconductor wafer 5 can be held in this state. When the rotation mechanism 3 rotates the chuck 2, the support portion 25 is in contact with the main surface 5a of the semiconductor wafer 5, so that the semiconductor wafer 5 can be rotated together with the chuck 2.

[0032] In this embodiment, a plurality of support portions 25 are provided on the opposing surface 2a of the chuck 2 at positions shifted from the center 2c of the opposing surface 2a of the chuck 2. Here, the center 2c of the opposing surface 2 of the chuck 2 corresponds to the center of rotation of the opposing surface 2 when the chuck 2 rotates.

[0033] When the support portion 25 is provided at the center 2c of the facing surface 2a of the chuck 2, the support portion 25 cannot apply a rotational force to the semiconductor wafer 5 when the chuck 2 rotates. On the other hand, when the support portion 25 is provided at a position displaced from the center 2c of the facing surface 2a of the chuck 2, the support portion 25 can apply a rotational force (rotational moment force) to the semiconductor wafer 5 when the chuck 2 rotates. In this embodiment, a plurality of support portions 25 are provided on the facing surface 2a of the chuck 2 at positions displaced from the center 2c of the facing surface 2a of the chuck 2. By rotating the chuck 2 with the plurality of support portions 25 in contact with the main surface 5a of the semiconductor wafer 5, the semiconductor wafer 5 held by the chuck 2 can be rotated together with the chuck 2.

[0034] In this way, the support portions 25 have the function of applying a rotational force (rotational moment force) to the semiconductor wafer 5 when the chuck 2 rotates. On the opposing surface 2a of the chuck 2, a plurality of support portions 25 (two or more) are provided at positions offset from the center 2c of the opposing surface 2a, but in order to rotate the semiconductor wafer 5 accurately, it is preferable to provide three or more support portions 25 at positions offset from the center 2c of the opposing surface 2a.

[0035] Furthermore, it is preferable that the opposing surface 2a of the chuck 2 is circular, which allows the chuck 2 to efficiently hold the circular semiconductor wafer 5 and also prevents the dimensions of the chuck 2 from becoming unnecessarily large.

[0036] The greater the distance R1 from the center 2c of the facing surface 2a of the chuck 2 to the support portion 25, the greater the rotational force that the support portion 25 can apply to the semiconductor wafer 5 when the chuck 2 rotates. For this reason, it is preferable to provide the support portion 25 at a position where the distance R1 from the center 2c of the facing surface 2a of the chuck 2 is equal to or greater than one-third of the radius R2 of the facing surface 2a of the chuck 2. In other words, it is preferable to provide the support portion 25 at a position on the facing surface 2a of the chuck 2 such that R1 ≥ R2 / 3 holds, where R1 is the distance between the support portion 25 and the center 2c of the facing surface 2a of the chuck 2 and R2 is the radius of the facing surface 2a of the chuck 2. This allows the semiconductor wafer 5 to rotate more accurately together with the chuck 2.

[0037] Furthermore, if the semiconductor wafer 5 is bent or tilted while the chuck 2 is holding the semiconductor wafer 5, the semiconductor wafer 5 may come into contact with the pads 23 of the chuck 2, which may hinder the gas from being ejected from the nozzles 24 of the pads 23. Therefore, in this embodiment, as shown in FIG. 2 , the pads 23 and the support portions 25 are arranged on the facing surface 2a of the chuck 2 so that each pad 23 is surrounded by the support portions 25 and the edge (outer periphery) of the facing surface 2a. That is, on the facing surface 2a of the chuck 2, each of the multiple pads 23 is surrounded by the support portions 25 and the edge of the facing surface 2a in a plan view. This more reliably prevents the semiconductor wafer 5 from coming into contact with the pads 23 of the chuck 2 when the chuck 2 is holding the semiconductor wafer 5. As a result, the gas from being ejected from the nozzles 24 of the pads 23 is more reliably prevented from being obstructed by the semiconductor wafer 5.

[0038] In this embodiment, the plan view corresponds to the view from a plane substantially parallel to the opposing surface 2 a of the chuck 2 .

[0039] From the viewpoints of making it easier for the support portion 25 to apply a rotational force to the semiconductor wafer 5 when the chuck 2 rotates and making it easier to prevent unnecessary force from being applied to the semiconductor wafer 5, an elastic body is preferred as the material for the support portion 25, and rubber is more preferred. On the other hand, from the viewpoint of protecting the semiconductor wafer 5, the material for the support portion 25 is preferably a resin (resin material). If the support portion 25 is made of a resin, it is easier to prevent unnecessary substances from adhering to the semiconductor wafer 5 even when the support portion 25 comes into contact with the main surface 5a of the semiconductor wafer 5. In addition, the support portion 25 can also be made of various other materials, such as metal.

[0040] The shape of the support portion 25 may be, for example, a columnar or cylindrical shape. The support portion 25 may be adhered to the opposing surface 2a of the chuck 2 with an adhesive or the like, or the support portion 25 may be fixed to the opposing surface 2a of the chuck 2 with a fixing member such as a screw.

[0041] Furthermore, from the viewpoint of minimizing the influence of the support portions 25 contacting the main surface 5a of the semiconductor wafer 5, it is desirable not to make the planar dimensions (planar area) of the support portions 25 too large. From this viewpoint, the planar dimensions (planar area) of each support portion 25 are set to 15.7 mm 2 The following is preferable: Here, the planar dimensions of each support portion 25 correspond to the area of ​​each support portion 25 in a plan view.

[0042] In addition, in this embodiment, the planar shape of the tip of support portion 25 is circular, and the planar shape of the tip of pad 23 is ring-shaped (donut-shaped), but in another embodiment, the planar shape of the tip of support portion 25 can also be ring-shaped (donut-shaped) like pad 23.

[0043] It is also preferable to arrange the plurality of support portions 25 in a balanced manner on the facing surface 2a of the chuck 2. For example, as shown in Fig. 2, it is preferable to arrange the plurality of support portions 25 at symmetrical positions (symmetrical with respect to the center 2c of the facing surface 2a) on the facing surface 2a of the chuck 2. This makes it possible to more reliably prevent the semiconductor wafer 5 held by the chuck 2 from bending or tilting.

[0044] It is also preferable that the pads 23 are arranged in a balanced manner on the facing surface 2a of the chuck 2. For example, as shown in Fig. 2, it is preferable that the pads 23 are arranged at symmetrical positions (symmetrical with respect to the center 2c of the facing surface 2a) on the facing surface 2a of the chuck 2. This allows the chuck 2 to hold the semiconductor wafer 5 more accurately.

[0045] It is also preferable that a plurality of pads 23 are arranged on the periphery of the facing surface 2a of the chuck 2. In the case of Fig. 2, the plurality of pads 23 are arranged at approximately equal intervals along the edge (outer periphery) of the facing surface 2a on the periphery of the facing surface 2a of the chuck 2. This allows the chuck 2 to hold the semiconductor wafer 5 more accurately, and makes it easier to suppress or prevent the semiconductor wafer 5 held by the chuck 2 from bending or tilting.

[0046] In this embodiment, as can be seen from FIG. 2 , the support portion 25 is not provided at the center 2c of the opposing surface 2a of the chuck 2. Alternatively, the support portion 25 may be provided at the center 2c of the opposing surface 2a of the chuck 2, not just at a position offset from the center 2c. That is, in FIG. 2 , the support portion 25 may be added at the center 2c of the opposing surface 2a. However, the support portion 25 provided at the center 2c of the opposing surface 2a cannot apply a rotational force to the semiconductor wafer 5. Furthermore, the resonance phenomenon is less likely to occur in the semiconductor wafer 5 held by the chuck 2 when the support portion 25 is not provided at the center 2c of the opposing surface 2a than when the support portion 25 is provided at the center 2c of the opposing surface 2a. Therefore, it is more preferable not to provide the support portion 25 at the center 2c of the opposing surface 2a than to provide the support portion 25 at the center 2c of the opposing surface 2a.

[0047] Furthermore, from the viewpoint of enabling the support portion 25 to accurately apply a rotational force to the semiconductor wafer 5 and minimizing the occurrence of resonance in the semiconductor wafer 5 held by the chuck 2, it is more preferable not to dispose the support portion 25 at a position where the distance from the center of the facing surface 2a is less than 1 / 3 of the radius R2 of the facing surface 2a. Furthermore, from the viewpoint of accurately holding the semiconductor wafer on the chuck 2, it is more preferable not to dispose the pad 23 at a position where the distance from the center of the facing surface 2a is less than 1 / 3 of the radius R2 of the facing surface 2a.

[0048] In this embodiment, when the chuck 2 holds the semiconductor wafer 5, the support portion 25 is in contact with the main surface 5a of the semiconductor wafer 5, not the side surface 5c of the semiconductor wafer 5.

[0049] Unlike the present embodiment, it is also possible to provide a support portion on the opposing surface 2a of the chuck 2 so as to contact the side surface 5c of the semiconductor wafer 5. This case is hereinafter referred to as an example. In the example, when the chuck 2 is rotated, the support portion contacting the side surface 5c of the semiconductor wafer 5 applies a rotational force to the semiconductor wafer 5, thereby rotating the semiconductor wafer 5.

[0050] However, in the case of the examined example, because it is necessary to provide a support portion on the opposing surface 2a of the chuck 2 so as to contact the side surface 5c of the semiconductor wafer 5, the planar dimensions of the chuck 2 become significantly larger than the planar dimensions of the semiconductor wafer 5. This results in an increase in the size of the chuck 2. Furthermore, if the planar dimensions of the chuck 2 are larger than the planar dimensions of the semiconductor wafer 5, it becomes difficult to detect the notch of the semiconductor wafer 5 held by the chuck 2 during the OCR process. Furthermore, in the examined example, by contacting the support portion with the side surface 5c of the semiconductor wafer 5, a force is applied that presses the semiconductor wafer 5 from the side surface of the semiconductor wafer 5, increasing the risk of chipping or cracking the semiconductor wafer 5. This is because the application of a force that presses the semiconductor wafer 5 from the side surface of a thin semiconductor wafer 5 makes the semiconductor wafer 5 more likely to chip or crack.

[0051] In contrast, in this embodiment, the support portion 25 provided on the opposing surface 2a of the chuck 2 contacts the main surface 5a of the semiconductor wafer 5 rather than the side surface 5c of the semiconductor wafer 5, thereby enabling the chuck 2 to be made smaller (reduced in area). For example, the planar dimensions (planar area) of the chuck 2 can be made smaller than the planar dimensions (planar area) of the semiconductor wafer 5. This makes it easier to detect the notch of the semiconductor wafer 5 held by the chuck 2 during the OCR process. This also reduces the risk of chipping or cracking of the semiconductor wafer 5. Even if the support portion 25 in contact with the main surface 5a of the semiconductor wafer 5 exerts a force that presses against the main surface 5a of the semiconductor wafer 5, the risk of chipping or cracking of the semiconductor wafer 5 is extremely low. Therefore, in this embodiment, the OCR process can be performed accurately, facilitating process management of the OCR process.

[0052] The semiconductor wafer 5 also has a notch or an orientation flat (see FIG. 7). In this embodiment, the case where the semiconductor wafer 5 has a notch 31 will be described, but the semiconductor wafer 5 may also have an orientation flat instead of the notch 31. When the semiconductor wafer 5 has an orientation flat instead of the notch 31, the "notch" in the description of this embodiment may be read as an "orientation flat."

[0053] Furthermore, the semiconductor wafer 5 has information (identification information) 32 provided on its main surface 5b by printing, engraving, or the like (see FIG. 7). The information 32 provided on the main surface 5b of the semiconductor wafer 5 is wafer identification information (wafer identification number) for identifying the semiconductor wafer 5. The information 32 is composed of, for example, numbers, letters, or symbols, or a combination thereof.

[0054] The thickness of the semiconductor wafer 5 is, for example, 150 μm or less. Even such a thin semiconductor wafer 5 can be accurately held by the chuck 2 because a Bernoulli chuck is used as the chuck 2. The diameter of the semiconductor wafer 5 is, for example, 200 mm or more.

[0055] The character recognition device 1 of this embodiment further includes an image sensor 41 and illumination (light sources) 42, 43 (see FIG. 6). The image sensor 41 is used to detect the notch 31 of the semiconductor wafer 5 and to read the information 32 provided on the main surface 5b of the semiconductor wafer 5. The image sensor 41 can also be considered as an identification unit (identification means) that can identify the notch 31 and the information 32.

[0056] Illumination 42 is used when image sensor 41 detects notch 31 of semiconductor wafer 5, and illumination 43 is used when image sensor 41 reads information 32 of semiconductor wafer 5. Illumination 42 can irradiate light onto main surface 5a of semiconductor wafer 5 held by chuck 2, and illumination 43 can irradiate light onto main surface 5b of semiconductor wafer 5 held by chuck 2. For this reason, the directions in which illumination 42 and illumination 43 irradiate light are opposite.

[0057] <Manufacturing Process of Semiconductor Device> First, prepare semiconductor wafer 5.

[0058] A semiconductor device is manufactured by subjecting the prepared semiconductor wafer 5 to various processes. Prior to that, a process of reading information 32 provided on main surface 5b of semiconductor wafer 5, a so-called OCR (Optical Character Recognition / Reader) process, is performed. The OCR process will be described below.

[0059] <<OCR Process>> FIG. 8 is an explanatory diagram (flow chart) for explaining the OCR process. The OCR process will be described with reference to FIGS. 6 to 8.

[0060] First, the semiconductor wafer 5 is held by chuck 2 of the above-described character recognition device 1 (step S1 in FIG. 8). Specifically, in step S1, gas is ejected from a plurality of pads 23 (nozzles 24) provided on the opposing surface 2a of chuck 2 in a state where main surface 5a of the semiconductor wafer 5 to be held faces the opposing surface 2a of chuck 2. As a result, the semiconductor wafer 5 is pulled up to the opposing surface 2a side of chuck 2, and main surface 5a of the semiconductor wafer 5 comes into contact with the tip of support portion 25, and in that state, the semiconductor wafer 5 is held by chuck 2. Then, the control unit 6 operates the arm portion 4 to move chuck 2 and the semiconductor wafer 5 held thereby to a position where the edge (outer periphery) of the semiconductor wafer 5 held by chuck 2 can be detected by image sensor 41 as shown in FIG. 6.

[0061] Next, the notch 31 of the semiconductor wafer 5 held by the chuck 2 is detected by the image sensor 41 (step S2 in FIG. 8 ). Specifically, the control unit 6 rotates the chuck 2 using the rotation mechanism 3, thereby rotating the semiconductor wafer 5 held by the chuck 2 together with the chuck 2. The image sensor 41 continuously captures images of the contour of the rotating semiconductor wafer 5, and when the image sensor 41 recognizes (detects) the notch 31 of the semiconductor wafer 5, the control unit 6 stops the rotation of the chuck 2 by the rotation mechanism 3, thereby stopping the rotation of the semiconductor wafer 5. As described above, in step S2 as well, the tip of the support portion 25 is in contact with the main surface 5a of the semiconductor wafer 5 held by the chuck 2. Therefore, when the rotation mechanism 3 rotates the chuck 2, the support portion 25 in contact with the semiconductor wafer 5 applies a rotational force to the semiconductor wafer 5, thereby rotating the semiconductor wafer 5 together with the chuck 2. Furthermore, in step S2, the image sensor 41 captures an image of the contour of the semiconductor wafer 5 while irradiating the outer periphery of the main surface 5a of the semiconductor wafer 5 with light 44 from the illumination device 42. This makes it easier for the image sensor 41 to distinguish the contour of the semiconductor wafer 5, enabling the image sensor 41 to accurately detect the notch 31 of the semiconductor wafer 5. In step S2, the illumination device 42 is positioned opposite the outer periphery of the main surface 5a of the semiconductor wafer 5 held by the chuck 2. In step S2, irradiation with light from the illumination device 43 is not necessary.

[0062] Next, the semiconductor wafer 5 is rotated by a predetermined angle (step S3 in FIG. 8). Specifically, the control unit 6 rotates the chuck 2 by a predetermined angle using the rotation mechanism 3, thereby rotating the semiconductor wafer 5 held by the chuck 2 together with the chuck 2 by the predetermined angle. At this time, the semiconductor wafer 5 is rotated so that the image sensor 41 can read the information 32 provided on the main surface 5b of the semiconductor wafer 5. Since the relative positional relationship between the position of the notch 31 and the position where the information 32 is provided on the main surface 5b of the semiconductor wafer 5 is known in advance, once the notch 31 is detected in step S2, the semiconductor wafer 5 can be rotated in step S3 to a rotational position where the image sensor 41 can read the information 32.

[0063] 7 , if the difference between the angular position of the information 32 and the angular position of the notch 31 on the main surface of the semiconductor wafer 5 is 180°, then in step S3, the semiconductor wafer 5 is rotated by 180°. As a result, the rotational position of the semiconductor wafer 5 upon completion of step S3 is set to a rotational position that enables the image sensor 41 to read the information 32 provided on the main surface 5b of the semiconductor wafer 5. As described above, in step S3 as well, the tip of the support portion 25 is in contact with the main surface 5a of the semiconductor wafer 5 held by the chuck 2. Therefore, when the rotation mechanism 3 rotates the chuck 2, the support portion 25 in contact with the semiconductor wafer 5 applies a rotational force to the semiconductor wafer 5, thereby rotating the semiconductor wafer 5 together with the chuck 2.

[0064] Next, the image sensor 41 is used to observe the contour of the semiconductor wafer 5, and the horizontal position of the semiconductor wafer 5 is corrected (step S4 in FIG. 8). For example, the control unit 6 detects the position of the apex of the contour of the semiconductor wafer 5 using the image sensor 41, and operates the arm unit 4 to move the semiconductor wafer 5 in the horizontal direction so that the position of the apex coincides with a predetermined reference position. By operating the arm unit 4 to move the chuck 2 in the horizontal direction, the semiconductor wafer 5 held by the chuck 2 can also be moved in the horizontal direction.

[0065] Next, the information 32 provided on the main surface 5b of the semiconductor wafer 5 is read using the image sensor 41 (step S5 in FIG. 8). In step S5, the information 32 provided on the main surface 5b of the semiconductor wafer 5 is read using the image sensor 41 while irradiating the outer periphery of the main surface 5b of the semiconductor wafer 5 with light 45 from the illumination device 43. This makes it easier for the image sensor 41 to distinguish the information 32 provided on the main surface 5b of the semiconductor wafer 5, allowing the image sensor 41 to accurately read the information 32. In step S5, the illumination device 43 is positioned opposite the outer periphery of the main surface 5b of the semiconductor wafer 5 held by the chuck 2. Therefore, the illumination devices 42 and 43 are positioned on opposite sides of the semiconductor wafer 5. In step S5, it is not necessary to irradiate light from the illumination device 42. Furthermore, it is not necessary to rotate the semiconductor wafer 5 in step S5.

[0066] The semiconductor wafer 5 can be identified based on the information 32 read in step S5, and the information 32 read in step S5 can be used in various subsequent processes. The information 32 read in step S5 can also be used for managing various processes and the manufactured products.

[0067] Steps S2, S3, S4, and S5 are performed in a state in which the semiconductor wafer 5 is held by the chuck 2 by ejecting gas from (the nozzles 24 of) a plurality of pads 23 provided on the facing surface 2a of the chuck 2.

[0068] Thereafter, the semiconductor wafer 5 is transported and subjected to various processes to manufacture a semiconductor device.

[0069] In the OCR process, after detecting the notch 31 of the semiconductor wafer 5 in step S2, the semiconductor wafer 5 is rotated by a predetermined angle in step S3, and the information 32 provided on the main surface 5b of the semiconductor wafer 5 is read in step S5. If the positions of the notches in the plurality of prepared semiconductor wafers are always constant and their positions can be grasped in advance, it is not necessary to detect the positions of the notches of individual semiconductor wafers in step S2, but it is not easy to achieve this. Therefore, it is necessary to perform the above-described steps S2, S3, S4, and S5 for each of the plurality of prepared semiconductor wafers. That is, before performing step S5, it is necessary to rotate the semiconductor wafer 5 in step S2 or step S3. In the present embodiment, the chuck 2 holds the semiconductor wafer 5 in a state where the main surface 5a of the semiconductor wafer 5 contacts the tip of the support portion 25 by ejecting gas from the pad 23. Therefore, when the chuck 2 rotates, the support portion 25 applies a rotational force to the semiconductor wafer 5, and the semiconductor wafer 5 can be accurately rotated together with the chuck 2. Therefore, steps S2, S3, S4, and S5 can be performed while the chuck 2 holds the semiconductor wafer 5. As a result, the time required for the OCR process can be shortened. In addition, the OCR process can be accurately performed. In addition, the risk of chipping or cracking occurring in the semiconductor wafer can be suppressed. In addition, the equipment required for the OCR process can be simplified.

[0070] <<Process after OCR process>> An example of the manufacturing process of the semiconductor device after the OCR process will be described with reference to FIGS. 9 to 14. FIGS. 9 to 14 are cross-sectional views of main parts during the manufacturing process of the semiconductor device of the present embodiment.

[0071] The semiconductor substrate SB shown in FIG. 9 is, for example, a semiconductor substrate (semiconductor wafer) made of p-type single crystal silicon having a specific resistance of about 1 to 10 Ωcm, and the semiconductor wafer 5 corresponds to the semiconductor substrate SB.

[0072] A semiconductor element is formed on the semiconductor substrate SB. In the following, an example will be described in which an n-channel metal insulator semiconductor field effect transistor (MISFET) is formed as the semiconductor element.

[0073] First, an isolation region ST is formed on the main surface of a semiconductor substrate SB as shown in Fig. 10. The isolation region ST is made of an insulator such as silicon oxide, and can be formed by an STI (Shallow Trench Isolation) method.

[0074] Next, as shown in FIG. 11, a p-type well PW is formed in the semiconductor substrate SB by ion implantation or the like in a region where an n-channel MISFET is to be formed.

[0075] Next, a gate electrode GE is formed on the semiconductor substrate SB (p-type well PW) via a gate insulating film GF. For example, an insulating film for the gate insulating film GF is formed on the main surface of the semiconductor substrate SB (surface of the p-type well PW) using a thermal oxidation method or the like, and then a conductive film (e.g., a polysilicon film) for forming the gate electrode GE is formed on the insulating film. Thereafter, the conductive film is patterned using a photolithography method and a dry etching method, thereby forming the gate electrode GE. The insulating film (the insulating film for the gate insulating film GF) remaining under the gate electrode GE becomes the gate insulating film GF.

[0076] Next, as shown in FIG. 12, n-type impurities are ion-implanted into regions on both sides of the gate electrode GE in the semiconductor substrate SB (p-type well PW). - Then, sidewall spacers SW are formed on both sidewalls of the gate electrode GE as sidewall insulating films. After that, n-type impurities are ion-implanted into the semiconductor substrate SB (p-type well PW) in regions on both sides of the structure consisting of the gate electrode GE and the sidewall spacers SW on its sidewalls, thereby forming n-type impurities. + The n-type semiconductor region SD is formed. +The junction depth of the semiconductor region SD is - deeper than the junction depth of the n-type semiconductor region EX, + The impurity concentration of the n-type semiconductor region SD is - The impurity concentration of the n-type semiconductor region EX is higher than that of the n-type semiconductor region EX. - type semiconductor region EX and n + The semiconductor region SD is formed.

[0077] Next, if necessary, activation annealing is performed, which is a heat treatment for activating the impurities introduced by the previous ion implantation.

[0078] In this way, an n-channel MISFET is formed as a semiconductor element on the semiconductor substrate SB. It is also possible to reverse the conductivity type and form a p-channel MISFET on the semiconductor substrate SB, or to form both an n-channel MISFET and a p-channel MISFET on the semiconductor substrate SB. While the case where a horizontal MISFET is formed on the semiconductor substrate SB has been described here, a vertical MISFET, i.e., a trench-gate MISFET, can also be formed on the semiconductor substrate SB.

[0079] Next, as shown in FIG. 13, n + A metal silicide layer SL is formed on the surface of the type semiconductor region SD and on the upper surface of the gate electrode GE by using a salicide technique.

[0080] 14, an insulating film IL1 is formed as an interlayer insulating film on the main surface of the semiconductor substrate SB so as to cover the gate electrode GE, the sidewall spacers SW, and the metal silicide layer SL. After the insulating film IL1 is formed, the upper surface of the insulating film IL1 can be polished by a CMP method or the like to improve the flatness of the upper surface of the insulating film IL1.

[0081] Next, a contact hole is formed in the insulating film IL1 using photolithography and etching techniques, and then a conductive plug PG made of tungsten (W) or the like is formed in the contact hole as a connecting conductor portion.

[0082] Next, an insulating film IL2 for forming wiring is formed on the insulating film IL1 with the plugs PG buried in. Then, wiring trenches are formed in the insulating film IL2 using photolithography and etching techniques, and wiring M1 is formed in the wiring trenches using damascene techniques. After that, upper-layer wiring and insulating films are formed, but illustration and description thereof are omitted here.

[0083] Thereafter, the semiconductor substrate SB and the structure thereon are separated into individual pieces by dicing (cutting), thereby obtaining semiconductor chips.

[0084] <Modification> Next, a modified example of the character recognition device 1 of this embodiment will be described with reference to Fig. 15 and Fig. 16. Fig. 15 and Fig. 16 are schematic diagrams (cross-sectional views) showing the modified character recognition device 1 when the OCR process is being performed, and correspond to Fig. 6. However, Fig. 15 shows the character recognition device 1 when the above step S2 in the OCR process is being performed, and Fig. 16 shows the character recognition device 1 when the above step S5 in the OCR process is being performed.

[0085] In the case of FIG. 6, the step S2 (detection of the notch 31) and the step S5 (reading of the information 32) are performed by the same image sensor 41.

[0086] In contrast, in the modified example (Figures 15 and 16), the above step S2 (detection of notch 31) is performed by image sensor 41a shown in Figure 15, and the above step S5 (reading of information 32) is performed by image sensor 41b shown in Figure 16.

[0087] Specifically, in the case of the study example (FIG. 15), in step S2, the chuck 2 is rotated by the rotation mechanism 3, thereby rotating the semiconductor wafer 5 held by the chuck 2 together with the chuck 2, and the contour of the rotating semiconductor wafer 5 is continuously photographed by the image sensor 41a. Then, when the image sensor 41a recognizes (detects) the notch 31 of the semiconductor wafer 5, the rotation of the chuck 2 by the rotation mechanism 3 is stopped, thereby stopping the rotation of the semiconductor wafer 5. In step S2, the contour of the semiconductor wafer 5 is photographed by the image sensor 41a while the outer periphery of the main surface 5a of the semiconductor wafer 5 is irradiated with light 44 from the illumination 42.

[0088] In addition, in the case of the example under consideration (Figure 16), in the above step S5, specifically, while irradiating the outer periphery of the main surface 5b of the semiconductor wafer 5 with light 45 from the illumination 43, the information 32 provided on the main surface 5b of the semiconductor wafer 5 is read using the image sensor 41b.

[0089] In the case of FIG. 6, step S2 (detection of notch 31) and step S5 (reading of information 32) can be performed by one (common) image sensor 41. On the other hand, in the case of the study example (FIGS. 15 and 16), both image sensor 41a for performing step S2 (detection of notch 31) and image sensor 41b for performing step S5 (reading of information 32) (i.e., two image sensors) are required. Therefore, from the viewpoint of reducing the number of required image sensors and suppressing costs, the case of FIG. 6 is more advantageous.

[0090] The invention made by the inventor has been specifically described above based on the embodiments thereof, but it goes without saying that the present invention is not limited to the above-described embodiments and can be modified in various ways without departing from the spirit of the invention.

[0091] For example, in a semiconductor device manufacturing process other than the OCR process, if it is necessary to rotate a semiconductor wafer held by a wafer holding device, the semiconductor wafer can be held and rotated by a wafer holding device that applies the technical concept of the character recognition device 1 described above. [Explanation of symbols]

[0092] 1 Character recognition device 2 chucks 2a side (opposite side) 2b side 2c center 3 Rotation mechanism 4 Arm section 5. Semiconductor wafers 5a,5b Main surface 5c side 6 Control Unit 11 Hollow shaft 12 slip ring 13,14 Piping 15 Rotary joint 21 Stock sensor 22 Flow path 23 Pad 24 nozzles 25 Support part 31 notches 32 Information 41, 41a, 41b Image sensor 42,43 Lighting 44,45 light EX n - Type semiconductor region GE gate electrode GF gate insulating film IL1,IL2 insulating film M1 wiring PG plug PW p-type well SB semiconductor substrate SD n + Type semiconductor region SL Metal silicide layer ST element isolation area SW Sidewall Spacer

Claims

1. a Bernoulli chuck having a first surface, a plurality of support portions formed on the first surface, a plurality of pads formed on the first surface, and a second surface opposite the first surface; a rotation mechanism disposed on the second surface of the Bernoulli chuck for rotating the Bernoulli chuck; Including, The first surface of the Bernoulli chuck, in a plan view, a central portion including the center of the first surface and spaced from the center by less than one-third of the radius of the first surface; a peripheral portion located around the central portion; and the plurality of support portions are disposed at positions shifted from the center in a plan view, the plurality of pads are arranged in the peripheral portion, not in the central portion, in a plan view; In a cross-sectional view, a height of each of the plurality of support portions from the first surface is greater than a height of each of the plurality of pads from the first surface; when holding the semiconductor wafer, a gas is ejected from each of the plurality of pads to suck the semiconductor wafer toward the first surface of the Bernoulli chuck, and the semiconductor wafer is brought into contact with the plurality of support portions without contacting the plurality of pads; When the rotation mechanism rotates the Bernoulli chuck, the semiconductor wafer held by the Bernoulli chuck also rotates together with the Bernoulli chuck.

2. 2. The wafer holding device according to claim 1, each of the plurality of support portions is a protrusion formed on the first surface of the Bernoulli chuck.

3. 2. The wafer holding device according to claim 1, A wafer holding device, wherein each of the plurality of support parts is disposed in the peripheral part, not in the central part, in a plan view.

4. 2. The wafer holding device according to claim 1, a wafer holding device, wherein on the first surface of the Bernoulli chuck, each of the plurality of pads is surrounded by the plurality of support portions and an edge of the first surface in a plan view.

5. 2. The wafer holding device according to claim 1, The wafer holding device, wherein each of the plurality of support parts is made of an elastic body.

6. 2. The wafer holding device according to claim 1, The wafer holding device, wherein the plurality of support parts are each made of a resin material.

7. 2. The wafer holding device according to claim 1, a first surface of the Bernoulli chuck, the plurality of support portions being disposed at positions symmetrical with respect to the center of the first surface;

8. 8. The wafer holding device according to claim 7, a wafer holding device, wherein the pads are disposed on the first surface of the Bernoulli chuck at positions symmetrical with respect to the center of the first surface.

9. 2. The wafer holding device according to claim 1, a presence sensor provided on the first surface of the Bernoulli chuck;

10. 2. The wafer holding device according to claim 1, The wafer holding device further includes a first image sensor for reading identification information attached to the semiconductor wafer held by the Bernoulli chuck.

11. 11. The wafer holding device according to claim 10, The wafer holding device, wherein the first image sensor is also used to detect a notch or an orientation flat of the semiconductor wafer held by the Bernoulli chuck.

12. 12. The wafer holding device according to claim 11, The wafer holding apparatus further includes a second image sensor for detecting a notch or an orientation flat of the semiconductor wafer held by the Bernoulli chuck.

13. 10. A method for manufacturing a semiconductor device, comprising an OCR process using the wafer holding apparatus according to claim 1.

14. (a) detecting a notch or an orientation flat of a semiconductor wafer while the semiconductor wafer is held by a Bernoulli chuck; (b) after the step (a), rotating the Bernoulli chuck using a rotation mechanism disposed on the Bernoulli chuck, thereby rotating the semiconductor wafer held by the Bernoulli chuck together with the Bernoulli chuck; (c) after the step (b), reading identification information attached to the semiconductor wafer while the semiconductor wafer is held by the Bernoulli chuck; Including, the Bernoulli chuck has a first surface facing the semiconductor wafer, a plurality of support portions formed on the first surface, a plurality of pads formed on the first surface, and a second surface opposite to the first surface, The first surface of the Bernoulli chuck, in a plan view, a central portion including the center of the first surface and spaced from the center by less than one-third of the radius of the first surface; a peripheral portion located around the central portion; and the plurality of support portions are disposed at positions shifted from the center in a plan view, the plurality of pads are arranged in the peripheral portion, not in the central portion, in a plan view; In a cross-sectional view, a height of each of the plurality of support portions from the first surface is greater than a height of each of the plurality of pads from the first surface; and in the steps (a), (b), and (c), the semiconductor wafer is sucked toward the first surface of the Bernoulli chuck by ejecting gas from each of the pads, and the semiconductor wafer is brought into contact with the plurality of supporting portions without coming into contact with the pads.

15. 15. The method for manufacturing a semiconductor device according to claim 14, (d) forming a semiconductor element on the semiconductor wafer after the step (c); The method for manufacturing a semiconductor device further comprises:

16. 15. The method for manufacturing a semiconductor device according to claim 14, A method for manufacturing a semiconductor device, wherein each of the plurality of support portions is arranged in the peripheral portion rather than the central portion in a plan view.

Images