Film capacitors

Abstract

The purpose of the present invention is to provide a film capacitor which has good withstand voltage strength even in cases where a voltage is applied thereto for a long period of time with a high electric field strength at high temperatures.　The present invention provides a film capacitor which is provided with: a dielectric resin film that has a first surface and a second surface, which are positioned opposite to each other; a first metal layer that is arranged on the first surface; and a second metal layer that is arranged on the second surface. In a mapping image of nitrogen atoms in a cross-section of the dielectric resin film in the thickness direction as observed by energy dispersive X-ray spectroscopy, the ratio of the area of nitrogen atom aggregated regions to the entire observed area is 35% or less.

Description

[Technical Field]

[0001] The present invention relates to a film capacitor. [Background technology]

[0002] One type of capacitor is a film capacitor, which uses a flexible resin film as a dielectric and has first and second opposing electrodes arranged across the resin film. The film capacitor has, for example, a generally cylindrical shape formed by winding a resin film as a dielectric, and first and second external terminal electrodes are formed on the opposing first and second end faces of the cylinder, respectively. The first opposing electrode is electrically connected to the first external terminal electrode, and the second opposing electrode is electrically connected to the second external terminal electrode.

[0003] As a dielectric resin composition to be used in such film capacitors, a resin composition has been proposed in which two or more organic materials, including at least a first and a second organic material, each having a functional group that reacts with the other, are mixed and crosslinked to obtain a cured product, wherein at least the first organic material has a carbon repeat number in the linear chain direction of 100 or more, the cured product has a glass transition point of 130°C or higher, and the cured product has a dielectric breakdown strength of 350 V / μm or higher (Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2010 / 101170 Summary of the Invention [Problem to be solved by the invention]

[0005] It is known that in general film capacitors, when insulation breakdown occurs due to the presence of an electrical weak point or the application of overvoltage, the surrounding vapor-deposited film instantly scatters and the insulation is restored. This self-healing function gives these capacitors a high level of safety, and in recent years, demand has been increasing for them in applications such as automotive and solar power generation, especially in applications where long periods of continuous use under high temperatures and high electric field strengths are expected. Since film capacitors have a property of recovering insulation due to the scattering of vapor-deposited electrodes, dielectric breakdown reduces the effective electrode area and leads to a decrease in capacitance. Therefore, when assuming long-term continuous use, a film capacitor that exhibits high voltage resistance under the usage environment and minimizes capacitance loss is required. However, according to the inventors' investigations, film capacitors formed using conventional dielectric resin compositions exhibit a large decrease in capacitance when voltage is applied continuously for long periods at high temperatures, limiting the continuous use time under these conditions.

[0006] An object of the present invention is to provide a film capacitor that exhibits little capacitance reduction even when a voltage is continuously applied for a long period of time under high temperature and high electric field strength conditions, and that can withstand long-term continuous use. [Means for solving the problem]

[0007] The film capacitor of the present disclosure comprises: a dielectric resin film having a first surface and a second surface located opposite to each other; a first metal layer disposed on the first surface; a second metal layer disposed on the second surface; In a mapping image of nitrogen atoms observed by energy dispersive X-ray spectroscopy of a cross section of the dielectric resin film in the thickness direction, the ratio of the area of ​​agglomerated regions of nitrogen atoms to the total observed area is 35% or less.

[0008] Moreover, the film capacitor of the present disclosure has a dielectric resin film having a first surface and a second surface located opposite to each other; a first metal layer disposed on the first surface; a second metal layer disposed on the second surface; In a mapping image of nitrogen atoms observed by energy dispersive X-ray spectroscopy of a cross section of the dielectric resin film in the thickness direction, the average value of the major axis of the nitrogen atom aggregation region is 220 nm or less. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a film capacitor that exhibits little capacitance reduction even when a voltage is continuously applied for a long period of time under high temperature and high electric field strength. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a longitudinal sectional view showing an example of a film capacitor of the present invention. [Figure 2] FIG. 2 is a vertical cross-sectional view showing an example of the film capacitor of the present invention. [Figure 3] FIG. 3 is a vertical cross-sectional view showing an example of the film capacitor of the present invention. [Figure 4] FIG. 4 is a vertical cross-sectional view showing an example of the film capacitor of the present invention. [Figure 5] Fig. 5(a) is a mapping image of nitrogen atoms in a cross section of the dielectric resin film of Test Example 3. Fig. 5(b) is a mapping image of nitrogen atoms in a cross section of the dielectric resin film of Test Example 5. Fig. 5(c) is a mapping image of nitrogen atoms in a cross section of the dielectric resin film of Test Example 11. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, a film capacitor according to one aspect of the present disclosure will be described in detail, but the present disclosure is not limited to such an embodiment. Furthermore, the shape and arrangement of the film capacitor and each component of the following embodiment are not limited to the examples shown in the drawings.

[0012] (First embodiment) 1, 2, and 3 are cross-sectional views of a film capacitor 1. As shown in Fig. 1, the film capacitor 1 includes a dielectric resin film 20, and a first metal layer 31 and a second metal layer 32 provided on the dielectric resin film 20.

[0013] In one embodiment, the dielectric resin film 20 has a ratio of the area of ​​nitrogen atom agglomeration regions 203 to the total observation area of ​​35% or less in a mapping image of nitrogen atoms (hereinafter also simply referred to as a "cross-sectional image") observed by energy dispersive X-ray spectroscopy of a cross section in the thickness direction of the dielectric resin film 20. The nitrogen atom agglomeration regions 203 can be understood as regions in the observation area of ​​the cross-sectional image where the concentration of nitrogen atoms is higher than regions 204 other than the nitrogen atom agglomeration regions (hereinafter also referred to as "other regions"), and can be typically understood as regions where a different phase containing many nitrogen atoms (typically a phase having a different composition from the other regions 204) exists, or regions where the nitrogen atoms are at a relatively higher concentration than other parts even in the same phase (typically a phase having the same composition as the other regions 204). When the ratio of the area of ​​the nitrogen atom aggregation region 203 to the total observation area in the cross-sectional image of the dielectric resin film 20 is within the above range, regions with excellent voltage resistance are formed, and even if regions with poor voltage resistance occur, they can be uniformly dispersed.Even when an external voltage is applied, the concentration of voltage in the regions with poor voltage resistance can be suppressed, resulting in a small decrease in capacity and the ability to withstand long-term continuous use.

[0014] In a cross-sectional image of the dielectric resin film 20 in the thickness direction, the ratio of the area of ​​the nitrogen atom aggregation regions 203 to the total observation area is, for example, 20% or less, particularly 15% or less, with no particular limitation on the minimum area ratio. The smaller the area ratio of the nitrogen atom aggregation regions 203 in the cross section of the dielectric resin film 20, the more uniformly the regions with poor voltage resistance can be dispersed. Therefore, even when an external voltage is applied, the concentration of voltage and current in the regions with poor voltage resistance can be further suppressed, resulting in a smaller capacity loss and improved durability for long-term continuous use. The area ratio of the nitrogen atom aggregation regions 203 may be 0% or more, for example, 0.1% or more. In this case, the slipperiness of the dielectric resin film 20 can be improved.

[0015] In one embodiment, the average value of the major axis of the nitrogen atom aggregation regions 203 in a cross-sectional image of the dielectric resin film 20 is 220 nm or less. The dielectric film in this embodiment has the above-described configuration, and therefore, regions with poor voltage resistance can be uniformly dispersed while regions with good voltage resistance can be formed, and even when an external voltage is applied, voltage concentration in the regions with poor voltage resistance can be suppressed. As a result, it is thought that the capacity reduction is small and the film can withstand long-term continuous use.

[0016] The average value of the major axis of the nitrogen atom aggregation regions 203 in a cross-sectional image in the thickness direction of the dielectric resin film 20 is 220 nm or less, and may be, for example, 200 nm or less, further 160 nm or less, particularly 110 nm or less, and may be, for example, 20 nm or more, or further 40 nm or more. The smaller the major axis of the nitrogen atom aggregation regions 203, the more uniformly the regions with poor voltage resistance are dispersed, and even when an external voltage is applied to the dielectric film, the more easily voltage concentration in the regions with poor voltage resistance is suppressed. As a result, it is thought that the capacity loss is further reduced and the dielectric film can withstand long-term continuous use.

[0017] In one embodiment, in a cross-sectional image of the dielectric resin film 20 in the thickness direction, the area ratio of the nitrogen atom aggregation regions 203 in the first portion 205 on the first surface 201 side is different from the area ratio of the nitrogen atom aggregation regions 203 in the second portion 206 on the second surface 202 side. That is, in a cross-sectional image of the dielectric resin film 20 in the thickness direction, there are fewer nitrogen atom aggregation regions 203 on one of the first surface 201 side and the second surface 202 side. The presence of fewer nitrogen atom aggregation regions increases the stress relaxation effect, and can suppress a decrease in capacitance caused by a difference in thermal expansion coefficient between the metal layer on the side where there are fewer first regions and the dielectric resin film 20.

[0018] Preferably, in a cross-sectional image of the dielectric resin film 20 in the thickness direction, the area ratio of the nitrogen atom aggregation regions 203 in the first portion 205 is smaller than the area ratio of the nitrogen atom aggregation regions 203 in the second portion 206. Since the first metal layer 31 is formed on the first surface 201 of the dielectric resin film 20, a decrease in capacitance due to a difference in thermal expansion coefficient between the first metal layer 31 and the dielectric resin film 20 can be more effectively suppressed by having a small area ratio of the nitrogen atom aggregation regions 203 in the first portion 205.

[0019] As shown in FIG. 2 , the first portion 205 is a portion on the first surface 202 side of the dielectric resin film 20. For example, it may be a portion from the first surface 201 to the center of the dielectric resin film 20 in the thickness direction, or it may be a portion from the first surface 201 to one-third of the thickness of the dielectric resin film 20, particularly a portion extending from the first surface 201 to 1,000 nm toward the center of the dielectric resin film 20. The second portion 206 is a portion on the second surface 202 side of the dielectric resin film 20. For example, it may be a portion from the second surface 202 to the center of the dielectric resin film 20 in the thickness direction, or it may be a portion from the second surface 202 to one-third of the thickness of the dielectric resin film 20, particularly a portion extending from the second surface 202 to 1,000 nm toward the center of the dielectric resin film 20. The first and second portions may overlap. Note that the first and second regions are not shown in FIG. 2 .

[0020] The area of ​​the nitrogen atom aggregation regions 203 and the average value of the major axis of the nitrogen atom aggregation regions 203 in a cross-sectional image of the dielectric resin film 20 in the thickness direction can be measured, for example, by energy dispersive X-ray spectroscopy (hereinafter sometimes abbreviated as "EDX") attached to a scanning transmission electron microscope (hereinafter sometimes abbreviated as "STEM"). Specifically, the cross-section of the dielectric resin film 20 in the thickness direction is observed by STEM, the distribution state of nitrogen atoms is measured by EDX, and in the resulting mapping image of nitrogen atoms, regions with high brightness are identified as the nitrogen atom aggregation regions 203. The major axis of the nitrogen atom aggregation regions 203 is defined as the longest line segment among the line segments separated by the periphery of the nitrogen atom aggregation regions 203. The major axes of five or more nitrogen atom aggregation regions 203 per dielectric resin film 20 are measured, and the arithmetic average value thereof is defined as the average value of the major axes of the nitrogen atom aggregation regions 203. The periphery of the nitrogen atom agglomeration region 203 may be identified by binarizing the mapping image of the nitrogen atoms.

[0021] The nitrogen atom aggregation regions 203 may be independent of each other or connected to each other, and typically, at least some of them may be independent of each other. The shape of the nitrogen atom aggregation regions 203 may be, for example, spherical, approximately spherical, spheroidal, oblate spheroidal, etc. Furthermore, the nitrogen atom aggregation regions 203 may or may not be physically or chemically bonded to the other regions 204, and typically may be chemically bonded, particularly by a covalent bond.

[0022] The thickness of the dielectric resin film 20 may be, for example, 1 μm or more, particularly 1.5 μm or more, and may be, for example, 5 μm or less, particularly 4 μm or less.

[0023] The dielectric resin film 20 includes a cured product of a first organic material and a second organic material, and is typically made of a cured product of the first organic material and the second organic material.

[0024] The first organic material may be a compound having an epoxy group, which is typically bonded to an end of the main chain of the first organic material.

[0025] The first organic material may be linear or branched, and is typically linear.

[0026] The first organic material may be a polyvinyl acetal such as polyvinyl acetoacetal; a polyhydroxy polyether such as phenoxy resin; a polyester polyol, etc., and in particular a polyhydroxy polyether.

[0027] The phenoxy resin may be a reaction product of a bisphenol compound such as bisphenol A, bisphenol B, bisphenol C, bisphenol E, bisphenol F, or bisphenol G with epichlorohydrin.

[0028] The weight-average molecular weight of the first organic material may be, for example, less than 75,000, or even 70,000 or less, particularly 40,000 or less, or may be, for example, 2,000 or more, particularly 5,000 or more. The smaller the weight-average molecular weight of the first organic material, the more uniform the composition of the uncured material becomes during the manufacturing process of the dielectric resin film 20, and the smaller the agglomerated regions 203 of nitrogen atoms in the resulting dielectric resin film 20 can be.

[0029] In the present disclosure, the weight average molecular weight can be measured by gel permeation chromatography (GPC) and can be specified as a converted value using polystyrene as a standard sample.

[0030] As the first organic material, one type may be used, or two or more types may be used.

[0031] Examples of the second organic material include aromatic polyisocyanates such as diphenylmethane diisocyanate, tolylene diisocyanate, and xylylene diisocyanate; aliphatic polyisocyanates such as hexamethylene diisocyanate; alicyclic polyisocyanates such as dicyclohexylmethane diisocyanate and isophorone diisocyanate; modified aromatic polyisocyanates, aliphatic polyisocyanates, and alicyclic polyisocyanates; and polyisocyanates such as polymers of aromatic polyisocyanates, aliphatic polyisocyanates, and alicyclic polyisocyanates. Examples of the second organic material include aromatic polyisocyanates. Examples of the polymers include dimers such as uretdione compounds; trimers such as adducts, isocyanurates, and biurets; polymericates, polymers of aromatic polyisocyanates, and mixtures thereof.

[0032] As the second organic material, one type may be used, or two or more types may be used.

[0033] When the mass ratio of the first organic material to the second organic material is expressed as [first organic material / second organic material], [first organic material / second organic material] may be, for example, 10 / 90 or more, even 20 / 80 or more, particularly 30 / 70 or more, and particularly 50 / 50 or more, and may be, for example, 90 / 10 or less, even 80 / 20 or less, and particularly 70 / 30 or less.

[0034] Furthermore, if the molar ratio of the isocyanate groups contained in the second organic material to the hydroxyl groups contained in the first organic material is expressed as [NCO / OH], [NCO / OH] can be, for example, 0.9 or more, or even 1 or more, particularly 1.1 or more, and can be, for example, 2 or less, or even 1.5 or less, particularly 1.3 or less.

[0035] The dielectric resin film 20 may contain unreacted material of the first organic material or the second organic material. In this case, the dielectric resin film 20 may have one or both of a hydroxyl group and an isocyanate group. The presence of a hydroxyl group or an isocyanate group in the dielectric resin film 20 can be confirmed using a Fourier transform infrared spectrophotometer (FT-IR).

[0036] The dielectric resin film 20 may contain other additives. Examples of the additives include a compatibilizer and a leveling agent. Examples of such compatibilizers include TEGO (registered trademark) VariPlus 1201TF (manufactured by Evonik) which will be described later.

[0037] The additive may or may not be physically or chemically bonded to the cured product of the first organic material and the second organic material. When the additive has a hydroxyl group, an epoxy group, a silanol group, a carboxyl group, or the like, the additive can be chemically bonded (covalently bonded) to the cured product of the first organic material and the second organic material.

[0038] When other additives are included, the content of the other additives may be, for example, 1 part by mass or more and 20 parts by mass or less relative to 100 parts by mass of the cured product of the first organic material and the second organic material, and in one embodiment, may be preferably 1 part by mass or more and 15 parts by mass or less, more preferably 2 parts by mass or more and 10 parts by mass or less, and even more preferably 3 parts by mass or more and 5 parts by mass or less.

[0039] Furthermore, when a voltage is applied to the dielectric resin film 20 at 125°C under conditions of an electric field strength of 257 V / μm, the rate of decrease in capacitance after 1000 hours may be, for example, less than 50%, typically 45% or less, and particularly 10% or less, and ideally 0% or more, for example 1% or more.

[0040] Furthermore, when a voltage is applied to the dielectric resin film 20 at 125°C under conditions of an electric field strength of 229 V / μm, the rate of decrease in capacitance after 1000 hours may be, for example, less than 50%, typically 45% or less, and particularly 10% or less, and ideally 0% or more, for example 1% or more.

[0041] The rate of decrease in capacitance can be expressed by the following formula, where the capacitance before voltage application is C0 and the capacitance after voltage application is C1. Capacitance reduction rate (%) = (C0-C1) / C0 x 100

[0042] [Method of manufacturing dielectric resin film] The dielectric resin film 20 is preparing a primary resin solution by mixing the first organic material, the second organic material, a solvent, and additives that may be used as needed; performing a process on the first resin solution to increase the reaction rate between the first organic material and the second organic material, thereby preparing a second resin solution; applying the resin solution to a substrate to form a coating film; drying the coating to remove the solvent to form a dry coating; and The dried coating film is heated and cured to obtain the dielectric resin film 20. The composition can be produced by a production method including the steps of:

[0043] The first organic material and the second organic material may be those described above.

[0044] The solvent may be one capable of dissolving the first organic material and the second organic material, such as a ketone solvent such as methyl ethyl ketone or diethyl ketone; or an ether solvent such as tetrahydrofuran or tetrahydropyran. One or more of the solvents may be used. The solvent may include, among others, a ketone solvent and an ether solvent.

[0045] The content of the ketone solvent in the solvent may be, for example, 10% by mass or more, further 30% by mass or more, particularly 40% by mass or more, and may be, for example, 90% by mass or less, further 70% by mass or less, particularly 60% by mass or less.

[0046] As the additives, those mentioned above can be used.

[0047] The total content of the first organic material and the second organic material in the primary or secondary resin solution may be, for example, 15% by mass or more and 25% by mass or less.

[0048] The process for increasing the reaction rate between the first organic material and the second organic material includes a process for stirring the primary resin solution at a relatively high temperature for a long time, or a process for adding a reaction catalyst to the primary resin solution and stirring it. These processes may be performed simultaneously, but typically, one of the processes is performed.

[0049] The temperature during the long-term stirring at the relatively high temperature may be, for example, 28° C. or higher, typically 30° C. or higher, and may be, for example, 50° C. or lower, typically 40° C. or lower, and particularly 35° C. or lower. The stirring time may be, for example, 5 hours or longer, typically 7 hours or longer, and may be, for example, 20 hours or shorter, typically 15 hours or shorter, and particularly 12 hours or shorter. By stirring the primary resin solution under the above conditions, the reaction rate between the first organic material and the second organic material can be increased.

[0050] Examples of the catalyst include amine compounds such as triethylamine, tributylamine, and triethylenediamine; organometallic compounds such as titanium tetrabutoxide, dibutyltin oxide, dibutyltin dilaurate, zinc naphthenate, cobalt naphthenate, tin octoate, and dibutyltin dilaurate; and inorganic compounds such as iron chloride and zinc chloride. Adding the catalyst to the primary resin solution can increase the reaction rate between the first organic material and the second organic material.

[0051] Before applying the second resin solution, high-pressure homogenization, mechanical homogenization, or ultrasonic homogenization may be performed, which can further improve the dispersibility of the first organic material and the second organic material.

[0052] The substrate onto which the secondary resin solution is applied may be a resin substrate, and examples of the resin constituting the resin substrate include polyester resins such as polyethylene terephthalate.

[0053] Examples of methods for applying the secondary resin solution to a substrate include roll coating methods such as reverse roll coating, gravure coating, roll coating, die coating, and bar coating; curtain coating; spray coating; and dip coating.

[0054] The temperature at which the coating film is dried (drying temperature) can be appropriately set within the range of 50° C. to 150° C. By drying the coating film within the above temperature range, a dried coating film can be obtained while maintaining the uniformity of the dispersion state of the first organic material and the second organic material.

[0055] The temperature (curing temperature) at which the dried coating film is heated and cured can be, for example, 100° C. or higher, further 120° C. or higher, particularly 140° C. or higher, and can be, for example, 170° C. or lower, further 165° C. or lower, particularly 160° C. or lower. Heating the dried coating film within the above temperature range promotes the crosslinking reaction between the first organic material and the second organic material, and dielectric resin film 20 can be obtained.

[0056] Without being bound by any particular theory, it is believed that performing a process to increase the reaction rate between the first organic material and the second organic material after preparing the primary resin solution facilitates the cross-linking reaction between the first organic material and the second organic material. Furthermore, it is believed that drying the coating at a specific drying temperature allows a portion of the first organic material and the second organic material to react, loosely fixing the dispersion state of the first organic material and the second organic material. Furthermore, when the first organic material and the second organic material are subsequently cured, if the molecular weight of the first organic material is sufficiently small, the dispersion state of the first organic material and the second organic material is maintained appropriately while the curing reaction proceeds. As a result, even if the portions derived from the second organic material aggregate (segregate), the dispersion state is maintained without coarsening, and the resulting dielectric resin film 20 has an aggregated region 203 of nitrogen atoms with a small major axis in the cross section.

[0057] The dielectric resin film 20 has a first surface 201 and a second surface 202 located on opposite sides to each other.

[0058] The first metal layer 31 is disposed on the first surface 201 and is preferably formed on the first surface 201 .

[0059] Here, "on the surface" does not refer to an absolute direction such as vertically upward, which is determined by the direction of gravity, but rather refers to the direction toward the outside of the film capacitor 1, which is bounded by the surface. Therefore, "on the surface" is a relative direction determined by the orientation of the surface. Furthermore, "above" an element does not only refer to a position directly above the element (on), but also refers to a position above the element, i.e., a position above the element via another object or a position above the element with a gap (above).

[0060] The first metal layer 31 may contain, for example, a first metal that is at least one selected from the group consisting of aluminum, titanium, zinc, magnesium, tin, and nickel, and may typically contain aluminum.

[0061] The thickness of the first metal layer 31 can be, for example, 5 nm or more and 40 nm or less. The thickness of the first metal layer 31 can be measured by cutting the dielectric resin film 20 on which the first metal layer 31 is provided in the thickness direction and observing the cut surface using an electron microscope such as a field emission scanning electron microscope (hereinafter sometimes abbreviated as "FE-SEM").

[0062] The first metal layer 31 can be formed by vapor deposition, or may be formed by laminating a metal foil containing the first metal onto the first surface 201 .

[0063] The second metal layer 32 is disposed on the second surface 202, and preferably faces the second surface. That is, the second metal layer 32 is disposed so that one surface of the second metal layer 32 faces the second surface.

[0064] The second metal layer 32 may contain, for example, a second metal that is at least one selected from the group consisting of aluminum, titanium, zinc, magnesium, tin, and nickel, and may typically contain aluminum.

[0065] The thickness of the second metal layer 32 can be, for example, 5 nm or more and 40 nm or less. The thickness of the second metal layer 32 can be measured by cutting the dielectric resin film 20 on which the second metal layer 32 is provided in the thickness direction and observing the cut surface using an electron microscope such as an FE-SEM.

[0066] The second metal layer 32 may be formed by vapor deposition, or by laminating a metal foil containing the second metal on the second surface 202. Alternatively, as shown in Fig. 2, a first metal layer 31a may be formed on the first surface 201a of the dielectric resin film 20a to form a laminated film unit 40a, and one laminated film unit 40a may be laminated with another laminated film unit 40b so that the second surface 202a of the laminated film unit 40a faces the first metal layer 31b of the laminated film unit 40b, with the first metal layer 31b of the laminated film unit 40b serving as the second metal layer 32a of the laminated film unit 40a. The first region 203 and the second region 204 are not shown in Fig. 2.

[0067] (Second embodiment) FIG. 4 is a cross-sectional view of a film capacitor.

[0068] As shown in Figure 4, the film capacitor 1A of this embodiment is a wound-type film capacitor, and is a film capacitor that includes a laminate 50 of laminated film units in which a first laminated film unit 41 and a second laminated film unit 42 are stacked and wound, and a first external terminal electrode 61 and a second external terminal electrode 62 connected to both ends of the laminate 50 in the width direction W.

[0069] The first laminated film unit 41 includes a first dielectric resin film 21 and a first metal layer (counter electrode) 31A provided on one side of the first dielectric resin film 21, and the second laminated film unit 42 includes a second dielectric resin film 22 and a second metal layer (counter electrode) 32A provided on one side of the second dielectric resin film 22. If the first dielectric resin film 21 is a dielectric resin film as defined in the claims, the first metal layer 31A corresponds to the first metal layer as defined in the claims, and the second metal layer 32A corresponds to the second metal layer as defined in the claims. If the second dielectric resin film 21 is a dielectric resin film as defined in the claims, the second metal layer 32A corresponds to the first metal layer as defined in the claims, and the first metal layer 31A corresponds to the second metal layer as defined in the claims.

[0070] The first metal layer 31A and the second metal layer 32A face each other with the first dielectric resin film 21 or the second dielectric resin film 22 sandwiched therebetween. The first metal layer 31A is electrically connected to the first external terminal electrode 61, and the second metal layer 32A is electrically connected to the second external terminal electrode 62.

[0071] The first metal layer 31A is formed on one surface of the first dielectric resin film 21 so as to reach one side edge of the first dielectric resin film 21 but not the other side edge. Typically, the first metal layer 31A is formed so as to reach the side edge on the side where the first metal layer 31A is electrically connected to the first external terminal electrode 61 but not the opposite side edge. The second metal layer 32A is formed on one surface of the second dielectric resin film 22 so as to not reach one side edge of the second dielectric resin film 22 but the other side edge. Typically, the second metal layer 32A is formed so as to reach the side edge on the side where the second metal layer 32A is electrically connected to the second external terminal electrode 62 but not the opposite side edge.

[0072] In the laminated film unit stack 50, the first laminated film unit 41 and the second laminated film unit 42 are stacked while being shifted from each other in the width direction. Typically, the first laminated film unit 41 is stacked so that the end portion of the first metal layer 31A that reaches the side edge of the first dielectric resin film 21 is exposed, and the second laminated film unit 42 is stacked so that the end portion of the second metal layer 32A that reaches the side edge of the second dielectric resin film 22 is exposed. The first laminated film unit 41 and the second laminated film unit 42 are stacked and wound in this manner to form the laminated film unit stack 50. In the laminated film unit stack 50, the first metal layer 31A and the second metal layer 32A are exposed at their ends.

[0073] 4, the second dielectric resin film 22 is laminated and wound so as to be located on the outer side of the first dielectric resin film 21 in the lamination direction T. The first laminated film unit 41 is wound so that the surface on which the first metal layer 31A is provided faces inward in the lamination direction T, and the second laminated film unit 42 is arranged so that the surface on which the second metal layer 32A is provided faces inward in the lamination direction T.

[0074] The cross-sectional shape of the laminate 50 of the multilayer film unit may be circular, elliptical, or oval, and from the viewpoint of achieving a small and low-profile structure, it is typically elliptical or oval. By pressing a laminate 50 having a circular cross-sectional shape, it is possible to obtain a laminate 50 having an elliptical or oval cross-sectional shape. The film capacitor 1A may further include a winding shaft. The winding shaft is arranged along the central axis of the laminate 50 and can be used as a winding shaft when winding the laminate film unit.

[0075] The first external terminal electrode 61 contacts an exposed end of the first metal layer 31A, thereby electrically connecting the first external terminal electrode 61 and the first metal layer 31A. Typically, the first metal layer 31A contacts the first external terminal electrode 61 while protruding in the width direction W relative to the first external terminal electrode 61. The second external terminal electrode 62 contacts an exposed end of the second metal layer 32A, thereby electrically connecting the second external terminal electrode 62 and the second metal layer 32A. Typically, the second metal layer 32A contacts the second external terminal electrode 62 while protruding in the width direction W relative to the second external terminal electrode 62.

[0076] The first dielectric resin film 21 and the second dielectric resin film 22 have the same configuration as the dielectric resin film 20. The first dielectric resin film 21 and the second dielectric resin film 22 may have different configurations from each other or may have the same configuration, and typically have the same configuration.

[0077] The thickness of the first dielectric resin film 21 and the second dielectric resin film 22 may be, for example, 1 μm or more, particularly 1.5 μm or more, and may be, for example, 5 μm or less, particularly 4 μm or less.

[0078] The first metal layer 31A and the second metal layer 32A may contain, for example, at least one selected from the group consisting of aluminum, titanium, zinc, magnesium, tin, and nickel, and may typically contain aluminum.

[0079] The thickness of the first metal layer 31A and the second metal layer 32A can be, for example, 5 nm or more and 40 nm or less. The thickness of the first metal layer 31A or the second metal layer 32A can be measured by cutting the first laminate film unit 41 or the second laminate film unit 42 in the thickness direction and observing the cut surface using an electron microscope such as an FE-SEM.

[0080] The first metal layer 31A and the second metal layer 32A may have different configurations or may have the same configuration, and typically have the same configuration.

[0081] The first external terminal electrode 61 and the second external terminal electrode 62 may contain, for example, at least one selected from the group consisting of zinc, aluminum, tin, and a zinc-aluminum alloy.

[0082] The first external terminal electrode 61 and the second external terminal electrode 62 may have different configurations or may have the same configuration, and typically have the same configuration.

[0083] [Film capacitor manufacturing method] The film capacitor 1A according to the present disclosure is manufacturing a first dielectric resin film 21 and a second dielectric resin film 22; forming a first metal layer 31A on at least one surface of the first dielectric resin film 21 to manufacture a first laminated film unit 41, and forming a second metal layer 32 on at least one surface of the second dielectric resin film 22 to manufacture a second laminated film unit 42; laminating the first laminate film unit 41 and the second laminate film unit 42, and typically further winding them to produce a laminate 50; and forming a first external terminal electrode 61 and a second external terminal electrode 62 at both ends in the width direction of the laminate 50; It can be produced by a production method including the steps of:

[0084] The first dielectric resin film 21 and the second dielectric resin film 22 can be manufactured by the same manufacturing method as the dielectric resin film 20.

[0085] The first laminate film unit 41 is fabricated by forming a first metal layer 31A on at least one surface of the first dielectric resin film 21, and the second laminate film unit 42 is fabricated by forming a second metal layer 32A on at least one surface of the second dielectric resin film 22. The first metal layer 31A and the second metal layer 32A may be formed by vapor deposition. When manufacturing the wound film capacitor according to this embodiment, the first metal layer 31A is formed on one surface of the first dielectric resin film 21 and is formed so as to reach one side edge of the first laminate film unit 41 in the width direction but not the other side edge of the first laminate film unit 41. The second metal layer 32A is formed on one surface of the second dielectric resin film 22 and is formed so as not to reach one side edge of the second laminate film unit 42 in the width direction but to reach the other side edge of the second laminate film unit 42.

[0086] The first laminate film unit 41 and the second laminate film unit 42 are laminated and typically further wound to produce the laminate 50. When producing the wound film capacitor 1A according to this embodiment, the first laminate film unit 41 and the second laminate film unit 42 are laminated while being offset by a predetermined distance in the width direction, and then further wound to produce the laminate 50 (wound body). A winding shaft may or may not be used as necessary. The cross-sectional shape of the laminate 50 (wound body) may be circular, or a laminate with a circular cross-sectional shape may be sandwiched in a direction perpendicular to the width direction and pressed to form an elliptical or oblong cross-sectional shape.

[0087] A first external terminal electrode 61 or a second external terminal electrode 62 is formed on both widthwise ends of the laminate 50 so as to contact the first metal layer 31A or the second metal layer 32A. The first external terminal electrode 61 and the second external terminal electrode 62 may be formed by thermal spraying. When manufacturing the wound film capacitor 1A according to this embodiment, the first external terminal electrode 61 is formed on one end face of the laminate 50 so as to contact the first metal layer 31A, and the second external terminal electrode 62 is formed on the other end face of the laminate 50 so as to contact the second metal layer 32A.

[0088] In this manner, the film capacitor of the present disclosure is manufactured.

[0089] In Figure 4, film capacitor 1A is a wound type film capacitor in which a first laminated film unit 41 and a second laminated film unit 42 are stacked and wound, but this is not limited to this and it may also be a laminated type film capacitor in which a first laminated film unit 41 and a second laminated film unit 42 are stacked.

[0090] The other effects of the configuration are the same as those of the first embodiment, and therefore the description thereof will be omitted.

[0091] The present disclosure is not limited to the above-described embodiments, and design modifications are possible within the scope of the present disclosure. For example, the respective features of the first and second embodiments may be combined in various ways.

[0092] The present disclosure includes the following. [1] A dielectric resin film having a first surface and a second surface located opposite to each other; a first metal layer disposed on the first surface; a second metal layer disposed on the second surface; A film capacitor in which, in a mapping image of nitrogen atoms observed by energy dispersive X-ray spectroscopy of a cross section of the dielectric resin film in the thickness direction, the ratio of the area of ​​nitrogen atom agglomeration regions to the total observation area is 35% or less. [2] The film capacitor according to [1], wherein the ratio of the area of ​​the nitrogen atom agglomeration region to the total observation area is 20% or less. [3] The film capacitor according to [1] or [2], wherein the ratio of the area of ​​the nitrogen atom agglomeration region to the total observation area is 15% or less. [4] A dielectric resin film having a first surface and a second surface opposite to each other; a first metal layer disposed on the first surface; a second metal layer disposed on the second surface; A film capacitor, wherein in a mapping image of nitrogen atoms observed by energy dispersive X-ray spectroscopy of a cross section of the dielectric resin film in the thickness direction, the average value of the major axis of the nitrogen atom agglomeration region is 220 nm or less. [5] The film capacitor according to [4], wherein the average value of the major axis of the nitrogen atom aggregation region is 110 nm or less. [6] The film capacitor according to any one of [1] to [5], wherein the area ratio of the nitrogen atom aggregation region in the first portion on the first surface side is different from the area ratio of the nitrogen atom aggregation region in the second portion on the second surface side. [7] The film capacitor according to any one of [1] to [6], wherein the area ratio of the nitrogen atom aggregation region in the first portion is smaller than the area ratio of the nitrogen atom aggregation region in the second portion. [8] The film capacitor according to any one of [1] to [7], wherein the dielectric resin film includes a cured product of a first organic material having two or more hydroxyl groups in one molecule and a second organic material having two or more isocyanate groups in one molecule. [Example]

[0093] The present invention will be explained in more detail with reference to the following examples, but the present invention is not limited to these examples.

[0094] Test Example 1 A reaction vessel was charged with 65 parts by mass of a polyhydroxypolyether (phenoxy resin (bisphenol A type epoxy resin) which is a reaction product of bisphenol A and epichlorohydrin) as a first organic material, weight average molecular weight 15,000, and 35 parts by mass of 4,4'-diphenylmethane diisocyanate (MDI) as a second organic material, and mixed with 400 parts by mass of a mixed solvent in which methyl ethyl ketone (MEK) and tetrahydrofuran (THF) were mixed at a mass ratio of 1:1 to obtain a primary resin solution. Next, the primary resin solution was stirred at 30°C for 10 hours to obtain a secondary resin solution.

[0095] The obtained resin solution was applied to a polyethylene terephthalate (PET) substrate using a gravure coater so that the thickness after curing would be 3.5 μm to obtain a coating film, and the solvent was dried in a drying oven to obtain a dry coating film.

[0096] The resulting dried coating was cured to obtain a dielectric resin film. Aluminum was vacuum-deposited on the dried surface of the resulting dielectric resin film to form an aluminum layer with a thickness of 20 nm, thereby obtaining a laminated film unit.

[0097] Test Examples 2 to 6 A dielectric resin film was obtained in the same manner as in Test Example 1, except that the weight-average molecular weight of the polyhydroxypolyether used as the first organic material was changed as shown in Table 1. Furthermore, an aluminum layer was formed on the dried surface of the dielectric resin film in the same manner as in Test Example 1, to obtain a laminated film unit.

[0098] Test Example 7 A dielectric resin film was obtained in the same manner as in Test Example 1, except that the weight-average molecular weight of the polyhydroxypolyether used as the first organic material was changed as shown in Table 1 and the stirring time for the primary resin solution was changed to 1 hour. Also, an aluminum layer was formed on the dried surface of the dielectric resin film in the same manner as in Test Example 1, to obtain a laminated film unit.

[0099] Test Example 8 The weight average molecular weight of the polyhydroxypolyether used as the first organic material was changed as shown in Table 1, and the blending amount was changed to 61.8 parts by mass. 3.2 parts by mass of TEGO (registered trademark) VariPlus 1201TF (manufactured by Evonik) was added as a compatibilizer, and otherwise a dielectric resin film was obtained in the same manner as in Test Example 1. An aluminum layer was formed on the dried surface of the dielectric resin film in the same manner as in Test Example 1, to obtain a laminated film unit.

[0100] Test Examples 9-11 A dielectric resin film was obtained in the same manner as in Test Example 8, except that the blending amount of polyhydroxypolyether as the first organic material was changed to 52 to 58.5 parts by mass, and the blending amount of TEGO (registered trademark) VariPlus 1201TF (manufactured by Evonik) as the compatibilizer was changed to 6.5 to 13 parts by mass, as shown in Table 1. Furthermore, an aluminum layer was formed on the dried surface of the dielectric resin film in the same manner as in Test Example 1, and a laminated film unit was obtained.

[0101] (Capacitance reduction rate) A voltage of 229 V / μm or 257 V / μm was applied to the laminated film units of Test Examples 1 to 11 for 1000 hours in an atmosphere at a temperature of 125°C. The change in the capacitance of the film during voltage application was confirmed. The capacitance before voltage application was designated C0, and the capacitance after voltage application was designated C1, and the capacitance reduction rate was calculated according to the following formula. Capacitance reduction rate (%) = (C0-C1) / C0 x 100

[0102] (Evaluation of composition uniformity within the film) The dielectric resin films of Test Examples 1 to 11 were cut in the thickness direction, and the cut surfaces were observed using an EDX (STEM-EDX) attached to a STEM. Specifically, the dielectric resin films of Test Examples 1 to 11 were cut into slices with the cross section in the thickness direction as the observation surface, and the slices were picked up on a sample support film for STEM observation. The distribution state of nitrogen atoms was then measured using STEM-EDX. An ultramicrotome was used to cut the slices, and the target thickness of the slices was 80 to 100 nm. The STEM-EDX measurement conditions were a magnification of 60,000x, an acceleration voltage of 200 kV, a STEM probe diameter of approximately 0.2 nmφ, a silicon drift detector was used as the EDX detector, and the EDX accumulation time was 1 hour.

[0103] Figure 5 shows the results of STEM-EDX measurements, showing the distribution of nitrogen atoms based on the number of counts of characteristic X-rays derived from nitrogen obtained at each point (pixel) when viewed at a magnification of 60,000x, a pixel size of 0.01 μm / pixel, and a resolution of 256 × 256. The light and dark areas in the figure indicate that the brighter the points, the higher the counts and the higher the concentration of nitrogen atoms.

[0104] Specifically, in STEM-EDX images taken at a magnification of 60,000x, a pixel size of 0.01 μm / pixel, and a resolution of 256 × 256, points where the number of counts of characteristic X-rays originating from nitrogen was 100 or more were defined as points of high nitrogen atomic concentration, and areas where continuous points of high nitrogen concentration were observed, such as area 203, were defined as nitrogen element agglomeration regions. The area ratio and average major diameter of the nitrogen agglomeration regions were calculated for each sample. Note that, as shown in Figure 5(c), for samples where no nitrogen agglomeration regions were observed, both the area ratio and average major diameter of the nitrogen agglomeration regions were defined as 0.

[0105] Fig. 5 shows a mapping image of nitrogen atoms in a cross section of the dielectric resin film of Test Example 5. In Fig. 5, there is a correlation between brightness and the distribution concentration of nitrogen atoms, with higher brightness indicating a higher distribution concentration of nitrogen atoms.

[0106] Based on the mapping images of nitrogen atoms in the cross section of the dielectric resin film of Test Examples 1 to 11, the areas of the nitrogen atom aggregation regions 203 with high brightness and the other regions 204 were measured, and the ratio of the area of ​​the nitrogen atom aggregation regions 203 to the total area of ​​the nitrogen atom aggregation regions 203 and the other regions 204 (total observation area) was calculated. In addition, five or more nitrogen atom aggregation regions 203 were selected, and their major axes were measured and an average value was calculated. The major axis of the nitrogen atom aggregation regions 203 was defined as the longest line segment among the line segments separated by the periphery of each nitrogen atom aggregation region 203.

[0107] The average major axis and area of ​​the nitrogen atom aggregation region shown in Table 1 are values ​​measured under the conditions of (Detailed Conditions). As shown in Figure 5(C), the average major axis and area ratio of the first region in a state where no nitrogen atom aggregation is observed were set to 0.

[0108] The results are shown in Table 1. Among Test Examples 1 to 11 in Table 1, those that correspond to comparative examples of the present invention are marked with a symbol "*", and the rest correspond to examples of the present invention.

[0109] [Table 1]

[0110] Test Examples 1 to 5 and 8 to 11 are examples of the present invention. The ratio of the area of ​​the nitrogen atom aggregation regions to the sum of the area of ​​the nitrogen atom aggregation regions and the area of ​​other regions (total observation area) ("Nitrogen Aggregation Region Area Ratio" in Table 1) was 35% or less, and the average value of the long diameter of the nitrogen atom aggregation regions ("Nitrogen Aggregation Region Average Long Diameter" in Table 1) was 220 nm or less. Furthermore, in Test Examples 1 to 5, the area ratio of the nitrogen atom aggregation regions in a region 1,000 nm deep from the surface on the dry side of the dielectric resin film was smaller than the area ratio of the nitrogen atom aggregation regions in a region 1,000 nm deep from the other surface of the dielectric film. The depth at which the area ratio of the nitrogen atom aggregation regions is measured can be changed depending on the film thickness. A voltage was applied at a temperature of 125°C for 1,000 hours under conditions of an electric field strength of 229 V / μm or 257 V / μm, and the rate of decrease in capacitance before and after the application was found to be lower.

[0111] Test Examples 6 and 7 are examples in which the ratio of the area of ​​nitrogen atom agglomeration regions to the sum of the area of ​​nitrogen atom agglomeration regions and the area of ​​other regions (total observation area) (in Table 1, "nitrogen agglomeration region-area ratio") exceeded 35% and the average value of the major axis of the nitrogen atom agglomeration regions exceeded 220 nm. When a voltage was applied under the above conditions, the rate of decrease in capacitance before and after application was large. [Explanation of symbols]

[0112] 1. Film capacitor 20, 20a, 20b Dielectric resin film 201, 201a 1st page 202, 202a 2nd page 203 Nitrogen atom condensation region 204 Areas other than the nitrogen atom condensation area 205 Part 1 206 Part 2 21 First dielectric resin film 22 Second dielectric resin film 31, 31a, 31b, 31A 1st metal layer 32, 32a, 32A 2nd metal layer 40, 40a, 40b Laminated film unit 41 First laminating film unit 42 Second laminating film unit 50 laminate 61 1st external terminal electrode 62 2nd external terminal electrode W width direction T Stacking direction

Claims

1. a dielectric resin film having a first surface and a second surface located opposite to each other; a first metal layer disposed on the first surface; a second metal layer disposed on the second surface; A film capacitor, wherein in a mapping image of nitrogen atoms observed by energy dispersive X-ray spectroscopy of a cross section in the thickness direction of the dielectric resin film, the ratio of the area of ​​nitrogen atom agglomeration regions to the total observation area is 0% or more and 30.2% or less.

2. 2. The film capacitor according to claim 1, wherein the ratio of the area of ​​the nitrogen atom agglomeration region to the total observation area is 20% or less.

3. 3. The film capacitor according to claim 1, wherein the ratio of the area of ​​the nitrogen atom agglomeration region to the total observation area is 15% or less.

4. a dielectric resin film having a first surface and a second surface located opposite to each other; a first metal layer disposed on the first surface; a second metal layer disposed on the second surface; A film capacitor, wherein in a mapping image of nitrogen atoms observed by energy dispersive X-ray spectroscopy of a cross section of the dielectric resin film in the thickness direction, the average value of the major axis of the nitrogen atom agglomeration region is 220 nm or less.

5. The film capacitor according to claim 4 , wherein an average value of the major axis of the nitrogen atom aggregation region is 110 nm or less.

6. The film capacitor according to any one of claims 1 to 2 and 4 to 5, wherein the area ratio of the nitrogen atom aggregation region in the first portion on the first surface side is different from the area ratio of the nitrogen atom aggregation region in the second portion on the second surface side.

7. The film capacitor according to claim 6 , wherein a ratio of an area of ​​the nitrogen atom aggregation region in the first portion is smaller than a ratio of an area of ​​the nitrogen atom aggregation region in the second portion.

8. The dielectric resin film comprises a cured product of a first organic material having two or more hydroxyl groups in one molecule and a second organic material having two or more isocyanate groups in one molecule. The film capacitor according to any one of claims 1 to 2 and 4 to 5.

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