Composite and airtight package including the composite

The composite structure with a glass lid and metal frame, bonded by a solder and metal particle bonding portion, addresses airtightness and alignment issues in infrared-emitting devices, ensuring reliable airtight seals and infrared transmission.

JP7792064B2Active Publication Date: 2025-12-25NIPPON ELECTRIC GLASS CO LTD
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Patent Information

Application Number
JP2022015728
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-02-03
Publication Date
2025-12-25
Estimated Expiration
2042-02-03

AI Technical Summary

Technical Problem

Existing airtight packages for devices with infrared-emitting laser elements face challenges in maintaining airtightness and alignment due to poor adhesion of infrared-transmitting materials, and traditional joining methods like low-melting-point solder risk misalignment during heating.

Method used

A composite structure with a glass lid and metal frame bonded by a solder portion and metal particle bonding portion, where the metal particle bonding portion is around the entire periphery and the solder portion is outside, preventing misalignment and ensuring airtightness.

Benefits of technology

The composite structure maintains airtightness and alignment, allowing for effective infrared light transmission while minimizing thermal effects on components, and is suitable for devices requiring airtight seals and infrared light transmission.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

To join a lid to a frame to make it possible to impart excellent airtightness to a space divided by the lid and the frame while preventing misalignment of a lid material.SOLUTION: A composite includes a frame 5 and a lid 6 provided on the frame 5. The lid 6 is formed of glass capable of transmitting infrared light L. A solder part 9 and a metal particle joining part 10 are provided between the lid 6 and the frame 5. The lid 6 and the frame 5 are joined to each other by the solder part 9 and the metal particle joining part 10.SELECTED DRAWING: Figure 3
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Description

[Technical Field]

[0001] The present invention relates to a composite and an airtight package including the composite, and more particularly to a technique for joining a lid and a frame that are capable of transmitting infrared light. [Background technology]

[0002] For example, a structure called an airtight package is known, which has a frame and a lid provided on the frame, and the space defined by the lid and the frame is kept airtight in order to protect an element such as an LED from the surrounding environment. In this type of structure, it is desirable to form the lid from glass with high gas barrier properties in order to maintain airtightness for a long period of time (see Patent Document 1 for both). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-1958 [Patent Document 2] Patent No. 6417199 [Patent Document 3] Japanese Patent Application Laid-Open No. 2011-141158 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, among devices equipped with the above-mentioned elements, those equipped with a laser element that emits infrared light are known (see, for example, Patent Document 2). Even in this type of device, it is important to maintain an airtight state in the space in which the laser element is placed, so it is considered desirable to apply the above-mentioned airtight package. Meanwhile, as described above, when protecting a laser element capable of emitting infrared light with an airtight package, a composite is required in which a lid is formed from a material that is transparent to infrared light and this lid is joined to a frame. However, this type of material generally has poor adhesion to other substances, so it is difficult to join the lid and frame in a sufficiently tight contact state using ordinary joining means.

[0005] For example, Patent Document 3 proposes a method of joining an infrared-transmitting glass window to a metal can frame using low-melting-point solder. Solder can ensure airtightness at the joint between the glass window and the metal can. However, when solder is used as the joining material, a phase transition inevitably occurs as the solder melts, and therefore, if the lid is heated while placed in a predetermined position on the frame, there is a risk of the lid becoming misaligned during heating.

[0006] In view of the above circumstances, the technical problem to be solved by the present invention is to obtain a composite body in which a lid body is joined to a frame body so as to prevent misalignment of the lid material while providing excellent airtightness to the space partitioned by the lid body and the frame body. [Means for solving the problem]

[0007] The above-mentioned problems are solved by a composite according to the present invention. That is, the composite according to the present invention is a composite including a frame and a lid provided on the frame, the lid being formed of glass that is capable of transmitting infrared light, a solder portion and a metal particle bonding portion being provided between the lid and the frame, and the lid and the frame being bonded to each other by the solder portion and the metal particle bonding portion.

[0008] In this way, the composite of the present invention provides a solder portion and a metal particle bonded portion between the lid and frame to be joined, and the metal particle bonded portion can reduce the influence of misalignment caused by a phase transition that occurs as the solder melts. Furthermore, the high airtightness of the solder portion can avoid a decrease in airtightness due to internal voids in the metal particle bonded portion.

[0009] In the composite body according to the present invention, the metal particle bonded portion may be formed over the entire peripheral edge of the lid, and in this case, the solder portion may be provided outside the metal particle bonded portion.

[0010] When the lid is made of glass that can transmit infrared light, the area of ​​the lid excluding the periphery (the central area) is usually used as the infrared light transmission area. Therefore, by forming the metal particle bonding area around the entire periphery of the lid and providing the solder area outside the metal particle bonding area, the metal particle bonding area can prevent the solder area from flowing inward (toward the infrared light transmission area). This reliably prevents the solder area from flowing into the infrared light transmission area of ​​the lid, ensuring the infrared light transmission function.

[0011] In the composite according to the present invention, the solder portion may be in contact with the metal particle bond portion.

[0012] By arranging the solder portion and the metal particle bonding portion in contact with each other in this way, atomic diffusion occurs between the metal constituting the solder portion and the metal constituting the metal particles. In particular, when the solder portion is in a liquefied state due to melting, the diffusion of metal atoms constituting the metal particles into the solder portion is promoted. Therefore, the properties of the metal constituting the metal particles, such as the effect of increasing the melting point and ductility of the solder portion, can be imparted to the solder portion, thereby improving the properties required of the solder portion as a joint.

[0013] In the composite according to the present invention, the solder portion may be formed of one or more metals selected from the group consisting of In, Sn, Bi, Ag, and Au.

[0014] In this way, by using one or more appropriate metals as the metals constituting the solder joint, it is possible to impart predetermined properties to the joint (solder joint) between the lid and the frame. Furthermore, by using a metal with a relatively low melting point, it is possible to melt the solder joint at a relatively low temperature. Therefore, it is possible to join the lid and the frame while minimizing the thermal effects on the lid and the frame joined by the solder joint, or on components (such as optical elements or components containing optical elements) placed in the space defined by the lid and the frame.

[0015] In the composite according to the present invention, the metal particles of the metal particle bonding portion may be made of one or more metals selected from Au, Ag, and Cu.

[0016] By forming the metal particles of the metal particle bonding portion from one or more of the above-mentioned metals, excellent properties can be imparted to the bonding portion (metal particle bonding portion) between the lid and the frame. Furthermore, depending on the composition, the metal particles of the above metals can be bonded to each other by sintering. Therefore, a strong metal bond can be obtained even at a relatively low temperature, which makes it possible to firmly bond the lid and the frame.

[0017] In the composite of the present invention, the glass capable of transmitting infrared light may be glass having an internal transmittance of 90% or more in the wavelength range of 3 to 14 μm when the glass has a thickness of 2 mm.

[0018] By selecting a glass that can transmit infrared light in this way, it is possible to ensure sufficient transmission of infrared light, thereby ensuring the required infrared light transmission characteristics required for the lid.

[0019] In the composite according to the present invention, the glass capable of transmitting infrared light may be a chalcogenide glass.

[0020] In this case, the chalcogenide glass may contain, in molar percentage, 50 to 80% S, 0 to 40% Sb (but not including 0%), 0 to 18% Ge (but not including 0%), 0 to 20% Sn, and 0 to 20% Bi.

[0021] Alternatively, the chalcogenide glass may contain, in mole percentage, 4 to 80% Te, 0 to 50% Ge (but not including 0%), and 0 to 20% Ga.

[0022] By using chalcogenide glass as the glass capable of transmitting infrared light, it is possible to achieve good infrared light transmission characteristics. Furthermore, because chalcogenide glass is less expensive than other infrared light transmitting materials such as Ge, it is possible to manufacture a composite body of a lid and a frame at low cost.

[0023] The present invention makes it possible to join a lid to a frame so as to prevent misalignment and provide excellent airtightness to the space partitioned by the lid and frame, and is therefore suitable for composites in which, for example, at least a portion of the lid is a window that can transmit infrared light.

[0024] Alternatively, the present invention is also suitable for a composite body in which at least a part of the lid is a lens that is capable of transmitting infrared light.

[0025] Alternatively, the present invention is also suitable for an airtight package including a substrate having a main surface and the composite material provided on the main surface of the substrate. [Effects of the Invention]

[0026] As described above, according to the present invention, it is possible to join the lid to the frame so as to prevent the lid material from shifting position while providing excellent airtightness to the space partitioned by the lid and the frame. [Brief explanation of the drawings]

[0027] [Figure 1]1 is a cross-sectional view of an electronic device configured with an airtight package including a composite according to an embodiment of the present invention. [Figure 2] FIG. 2 is a plan view of the electronic device shown in FIG. [Figure 3] 2 is an enlarged cross-sectional view of a portion indicated by an arrow A in FIG. 1. [Figure 4] FIG. 4 is an enlarged cross-sectional view of a portion indicated by an arrow B in FIG. [Figure 5] 2A to 2D are cross-sectional views conceptually illustrating the steps of manufacturing the composite shown in FIG. 1, each of which conceptually shows (a) a silicon film forming step, (b) a metallized film forming step, (c) a solder material and metal paste material supplying step, and (d) a setting step. DETAILED DESCRIPTION OF THE INVENTION

[0028] An embodiment of the present invention will be described below with reference to Figures 1 to 5. Note that the terms "upper" and "lower" in the following description are merely defined for the sake of convenience to facilitate understanding of the description, and do not limit the actual manner of use or placement.

[0029] 1 is a cross-sectional view of an electronic device 1 according to this embodiment. The electronic device 1 includes an electronic component 2 and an airtight package 3 that houses the electronic component 2.

[0030] In this embodiment, the electronic component 2 is, for example, a laser element that emits infrared light L. An example of a laser element is a quantum cascade laser element. When the electronic component 2 is a quantum cascade laser element, the electronic device 1 is configured with other necessary components (not shown) so that it can be used as, for example, a gas analyzer or a precision processing device. The electronic component 2 may also be a light-receiving element that can receive infrared light L. The light-receiving element may be, for example, a bolometer type, a thermopile type, a pyroelectric type, a quantum type (Mercury Cadmium Telluride, InSb, Type III Super-Lattice), or the like, and may be any suitable type depending on the application. It is possible to select the appropriate element.

[0031] The airtight package 3 includes a base 4 having an electronic component 2 provided on a main surface 4a thereof, a frame 5 disposed on the main surface 4a of the base 4 so as to surround the electronic component 2, a lid 6 provided on the frame 5, and a joint 7 formed between the frame 5 and the lid 6. In this case, the frame 5, the lid 6, and the joint 7 constitute a composite 8 according to the present invention.

[0032] The frame 5 integrally includes a tubular portion 5a disposed on the main surface 4a of the base 4 and an inner flange portion 5b extending from the upper end of the tubular portion 5a toward the center. In this case, the lower end of the frame 5 in the vertical direction is closed by the base 4, and the upper end in the vertical direction is closed by the lid 6. In this embodiment, the frame 5 (tubular portion 5a) has a rectangular tubular shape as shown in Fig. 2, but it may have other shapes such as a cylindrical shape, an elliptical tubular shape, or a polygonal tubular shape.

[0033] The inner flange 5b may be omitted if a sufficient bonding area can be secured between the upper end surface of the cylindrical portion 5a and the lower surface 6a of the lid 6. In this case, a bonding portion 7 (not shown) is formed between the upper end surface of the cylindrical portion 5a and the lower surface 6a of the lid 6.

[0034] The base 4 and the frame 5 are formed of, for example, ceramics such as aluminum nitride or aluminum oxide, glass, glass ceramics, silicon compounds such as silicon, or metals containing Co, Ni, Fe, Ag, Cu, W, Mo, or the like. In this embodiment, the base 4 and the frame 5 are both formed of metal. When the base 4 and the frame 5 are formed of the same material, the base 4 and the frame 5 may be formed integrally, or may be formed separately and then integrated (bonded). When bonding the base 4 and the frame 5 (cylindrical portion 5a), any bonding method can be used, such as laser bonding, solder bonding, or glass frit bonding.

[0035] The lid body 6 is generally plate-shaped and has a flat lower surface 6a. The lid body 6 is joined with the flat lower surface 6a placed on the upper surface 5c of the inner flange portion 5b of the frame body 5. In other words, a joint 7 is formed between the lower surface 6a of the lid body 6 and the upper surface 5c of the frame body 5. The shape of the lid body 6 is arbitrary and is set appropriately depending on the characteristics required of the lid body 6. For example, in this embodiment, the central regions 6a2 and 6b2 of the lower surface 6a and the upper surface 6b are formed flat so that the central region 6c of the lid body 6 functions as a window for transmitting infrared light.

[0036] The lid 6 is made of glass that is transmissive to infrared light L. Specifically, the glass that is transmissive to infrared light L is glass that, at a thickness of 2 mm, has an internal transmittance of 70 to 99% (preferably 90% or more) in the wavelength range of 3 to 14 μm, and an internal transmittance of 2% or less in the wavelength range of 0.4 to 0.8 μm. The internal transmittance can be measured using, for example, a UH-4150 manufactured by Hitachi High-Tech Science.

[0037] An example of glass exhibiting the above properties is chalcogenide glass, which may contain, by mole percentage, 50-80% S, 0-40% (but not including 0%) Sb, 0-18% (but not including 0%) Ge, 0-20% Sn, and 0-20% Bi.

[0038] In chalcogenide glass, the S content, in mole percentage, is preferably 55% or more, more preferably 60% or more, and preferably 75% or less, and more preferably 70% or less. If the S content in the glass is less than 50%, vitrification becomes difficult. On the other hand, if the S content in the glass exceeds 80%, the weather resistance of the glass decreases, thereby restricting the environment in which the electronic device 1 can be used. From these perspectives, the S content is set within an appropriate numerical range.

[0039] In the chalcogenide glass, the Sb content, in mole percentage, is preferably 5% or more, more preferably 10% or more, and preferably 35% or less, more preferably 33% or less. If the glass does not contain Sb or if the Sb content exceeds 40%, vitrification becomes difficult.

[0040] In chalcogenide glass, the Ge content, in mole percentage, is preferably 2% or more, more preferably 4% or more, and preferably 20% or less, more preferably 15% or less. If the glass does not contain Ge, it becomes difficult to vitrify. On the other hand, if the Ge content in the glass exceeds 18%, Ge-based crystals will precipitate from the glass, making it difficult to achieve the above-mentioned internal transmittance.

[0041] In chalcogenide glass, the Sn content, in mole percentage, is preferably 1% or more, more preferably 5% or more, and preferably 15% or less, more preferably 10% or less. Sn in glass is a component that promotes vitrification. However, if the Sn content in glass exceeds 20%, vitrification becomes difficult.

[0042] In chalcogenide glass, the Bi content, in mole percentage, is preferably 0.5% or more, more preferably 2% or more, and preferably 10% or less, more preferably 8% or less. Bi in glass is a component that reduces the energy required to vitrify raw materials when melting the glass. On the other hand, if the Bi content in the glass exceeds 20%, Bi-based crystals will precipitate from the glass, making it difficult to achieve the above-mentioned internal transmittance.

[0043] The composition is not limited to the above, and the chalcogenide glass may contain, in mole percentage, 4 to 80% Te, 0 to 50% Ge (but not including 0%), and 0 to 20% Ga.

[0044] In chalcogenide glass, the Te content, in mole percentage, is preferably 10% or more, more preferably 20% or more, and preferably 75% or less, more preferably 70% or less. If the Te content in the glass is less than 4%, vitrification becomes difficult. On the other hand, if the Te content in the glass exceeds 80%, Te-based crystals precipitate from the glass, making it difficult to achieve the above-mentioned internal transmittance.

[0045] In chalcogenide glass, the Ge content, in mole percentage, is preferably 1% or more, more preferably 5% or more, and preferably 40% or less, more preferably 30% or less. If the glass does not contain Ge, it becomes difficult to vitrify. On the other hand, if the Ge content in the glass exceeds 50%, Ge-based crystals will precipitate from the glass, making it difficult to achieve the above-mentioned internal transmittance.

[0046] In chalcogenide glass, the Ga content, in mole percentage, is preferably 0.1% or more, more preferably 1% or more, and preferably 15% or less, more preferably 10% or less. By including Ga in the glass, the vitrification range can be expanded and the thermal stability (vitrification stability) of the glass can be improved.

[0047] A joint 7 is formed between the lower surface 6a of the lid 6 and the upper surface 5c of the frame 5, joining the lower surface 6a and the upper surface 5c to each other. Here, as shown in FIG. 3 , the joint 7 is composed of a solder portion 9 and a metal particle bonding portion 10. That is, the lower surface 6a of the lid 6 and the upper surface 5c of the frame 5 are bonded to each other via the solder portion 9, and are also bonded to each other via the metal particle bonding portion 10. In this embodiment, the solder portion 9 is provided over the entire peripheral edge of the lid 6. Similarly, the metal particle bonding portion 10 is also provided over the entire peripheral edge of the lid 6.

[0048] 3, the solder portion 9 is provided on the outer side of the metal particle bonding portion 10. In other words, the metal particle bonding portion 10 is provided on a side relatively closer to the central region 6c of the lid body 6, and the solder portion 9 is provided on a side relatively farther from the central region 6c of the lid body 6.

[0049] In this embodiment, the solder portion 9 and the metal particle bonding portion 10 are in contact with each other. As shown in Fig. 3, when the solder portion 9 is provided outside the metal particle bonding portion 10, the outer portion of the metal particle bonding portion 10 and the inner portion of the solder portion 9 are in contact with each other. This allows the metal atoms of the metal particle bonding portion 10 to dissolve and diffuse into the solder portion 9 in the manufacturing process described below, which not only increases the melting point of the solder portion 9 and improves its heat resistance, but also increases its ductility, thereby improving its mechanical properties such as impact resistance.

[0050] The thickness of the solder portion 9 is preferably 1 μm or more and 200 μm or less, more preferably 10 μm or more and 100 μm or less, and even more preferably 20 μm or more and 50 μm or less.

[0051] Similarly, the thickness of the metal particle bonded portion 10 is preferably 1 μm or more and 200 μm or less, more preferably 10 μm or more and 100 μm or less, and even more preferably 20 μm or more and 50 μm or less.

[0052] Known solder materials can be used as the material (solder material) of the solder portion 9, and the solder portion 9 may be formed of one or more metals selected from, for example, In, Sn, Bi, Ag, Au, and Pb. Furthermore, suitable solder materials that can be used (melted) at relatively low temperatures (for example, below 250°C) include Sn-Bi solder, Sn-In solder, and Sn-Ag solder.

[0053] The metal particle bonding portion 10 has a structure in which a plurality of metal particles are bonded to one another. These metal particles can be made of any metal (including alloys), and metal particles made of one or more metals selected from Au, Ag, and Cu are suitable. In principle, the particle size of the metal particles can also be any size, and micro- or nano-level metal particles can be used.

[0054] The metal particle bonded portion 10 can be obtained, for example, by heating a material (e.g., a paste-like material) containing the metal particles and a solvent, removing the solvent, and promoting the sintering of the metal particles. In this case, the heating temperature (sintering temperature of the metal particles) is appropriately set taking into consideration the composition and particle size of the metal particles and the melting point of the solder portion 9. In other words, it is desirable to set the composition and particle size of the metal particles so that the sintering temperature is lower than the melting point (melting temperature) of the solder portion 9.

[0055] In this embodiment, the underside 6a of the lid 6 has a silicon layer 11 (see FIG. 4). The infrared light transmitting glass (e.g., chalcogenide glass) that makes up the lid 6 has poor adhesion and bonding to other substances, but can exhibit good adhesion and bonding to the silicon layer 11. Therefore, by interposing the silicon layer 11 between the solder portion 9 and the lid 6, the solder portion 9 can be tightly attached to the lid 6.

[0056] The silicon layer 11 is formed in the peripheral region 6a1 of the underside 6a of the lid 6 by, for example, vapor deposition or sputtering. In this case, the silicon layer 11 is preferably formed over the entire area (entire periphery) of the peripheral region 6a1. The thickness of the silicon layer 11 is preferably 0.01 μm or more and 5 μm or less, more preferably 0.03 μm or more and 1 μm or less, and even more preferably 0.05 μm or more and 0.50 μm or less.

[0057] In this embodiment, the lower surface 6a of the lid 6 further includes a metallized layer 12 (see FIG. 4). That is, in this case, the lower surface 6a of the lid 6 is provided with a silicon layer 11, and a metallized layer 12 is further provided on the surface of the silicon layer 11. The metallized layer 12 can exhibit good adhesion and bonding to the silicon layer 11 (silicon). Furthermore, the metallized layer 12 can exhibit good adhesion and bonding to the solder portion 9 (solder). Therefore, by providing the silicon layer 11, the metallized layer 12, and the solder portion 9 in this order from the lid 6 side, the frame 5 and the lid 6, which are in contact with the solder portion 9, can be firmly bonded together. Furthermore, the airtightness of the space partitioned by the frame 5 and the lid 6 (space 13 within the airtight package 3) can be increased to a required level.

[0058] The metallized layer 12 is formed on the surface of the silicon layer 11 by, for example, vapor deposition or sputtering. In this case, the metallized layer 12 is preferably formed over the entire surface of the silicon layer 11. The thickness of the metallized layer 12 is preferably 0.1 μm or more and 10 μm or less, more preferably 0.3 μm or more and 5 μm or less, and even more preferably 0.5 μm or more and 3 μm or less.

[0059] For example, Cr, Ti, Ni, Pt, Au, Co, and alloys thereof can be used as the material for the metallized layer 12. There are also no particular limitations on the structure of the metallized layer 12, and it is possible to use a single layer made of any of the above materials, or a multi-layer structure made of different materials.

[0060] Before forming the silicon layer 11, an anti-reflection film (not shown) may be formed on one or more main surfaces (at least one of the lower surface 6a and the upper surface 6b) of the lid body 6. This makes it possible to suppress reflection of light through the lid body 6. The anti-reflection film is preferably made of at least one material selected from the group consisting of Ge, Si, fluoride, ZnSe, ZnS, and diamond-like carbon. The anti-reflection film can be formed by, for example, a vapor deposition method or a sputtering method. The thickness of the anti-reflection film is, for example, 1.0 μm or more and 5.0 μm or less.

[0061] Next, an example of a method for manufacturing the composite 8, the airtight package 3, and the electronic device 1 having the above-described configuration will be described mainly with reference to FIG.

[0062] The method for manufacturing the composite 8 according to this embodiment includes a silicon layer forming step S1 in which a silicon layer 11 is formed on the surface of the lid 6, a metallized layer forming step S2 in which a metallized layer 12 is formed on the surface of the silicon layer 11, a material supplying step S3 in which a material for the joint 7 is supplied to the surface of the frame 5, a setting step S4 in which the lid 6 is set in a predetermined position on the frame 5, and a joint forming step S5 in which the material for the joint 7 is heated to form the joint 7. The method for manufacturing the airtight package 3 and the electronic device 1 further includes the above steps S1 to S5, and a joining step S6 in which the base 4 is joined to the frame 5. Details of each of steps S1 to S6 will be described below in order.

[0063] (S1) Silicon layer formation process In this step S1, a silicon layer 11 is formed on the surface of the lid body 6 having a predetermined shape, specifically, on the peripheral region 6a1 of the lower surface 6a (see FIG. 5(a)). For example, when forming the silicon layer 11 by vapor deposition, the lid body 6 and a silicon material are carried into a vacuum chamber of a vapor deposition device, and the silicon material is heated and evaporated in a vacuum atmosphere, whereby the evaporated silicon molecules are deposited on the lower surface 6a of the lid body 6 (particularly the peripheral region 6a1), and a silicon layer 11 of a predetermined thickness is formed on the lower surface 6a.

[0064] (S2) Metallized layer formation process In this step S2, a metallized layer 12 is formed on the surface of the silicon layer 11 formed on the lower surface 6a of the lid 6 obtained in step S1 (see FIG. 5(b)). For example, when the metallized layer 12 is formed by vapor deposition, the metallized layer 12 is formed to a predetermined thickness on the silicon layer 11 in the same manner as in step S1. This results in a lid 6 formed in a peripheral region 6a1 of the lower surface 6a with the silicon layer 11 and the metallized layer 12 overlapping each other.

[0065] (S3) Material supply process In this process S3, the material for the joint 7 is supplied to a predetermined surface of the frame 5 to be joined. Specifically, first, the frame 5 is prepared as shown in FIG. 5(c). Then, a solder material 9a, which is the material for the solder portion 9 serving as the joint 7, is supplied to the upper surface 5c of the frame 5. In this case, the solder material 9a is supplied over the entire circumferential area of ​​the upper surface 5c. Also, a metal paste material 10a, which is the material for the metal particle bonded portion 10 serving as the joint 7, is supplied to the upper surface 5c of the frame 5. In this case, the metal paste material 10a is supplied over the entire circumferential area of ​​the upper surface 5c. In this embodiment, the supply ranges of the solder material 9a and the metal paste material 10a are set so that the solder material 9a is located outside the metal paste material 10a and so that the solder material 9a and the metal paste material 10a are in contact with each other. In this embodiment, the solder material 9a and the metal paste material 10a are supplied to the upper surface 5c of the frame body 5, but the solder material 9a and the metal paste material 10a may also be supplied to the lower surface 6a of the lid body 6 obtained in step S1 or step S2.

[0066] (S4) Setting process In step S4, the lid body 6 prepared in step S2 is set in a predetermined position on the frame body 5 obtained in step S3. At this time, the lid body 6 is set in a predetermined position on the frame body 5 while being positioned horizontally so that the entire areas of the silicon layer 11 and the metallized layer 12 provided on the lower surface 6a of the lid body 6 are in contact with the solder material 9a and the metal paste material 10a supplied to the upper surface 5c of the frame body 5 (see FIG. 5(d)).

[0067] (S5) Joint forming process After the lid 6 is set as described above, the frame 5 and the lid 6 are placed in, for example, a heating furnace and heated to a predetermined temperature. In this embodiment, the metal paste material 10a supplied onto the frame 5 is first heated to a temperature at which it can exert a bonding force (i.e., a sintering temperature). This removes the solvent from the metal paste material 10a, and the metal particles in the metal paste material 10a aggregate, forming a sintered bond between them. As a result, a metal particle bond (here, a sintered metal portion) 10 is formed between the frame 5 and the lid 6.

[0068] After forming the metal particle bond 10 in this manner, the frame 5 and the lid 6 are heated to a temperature at which the solder material 9a melts. This melts the solder material 9a and brings it into close contact with the upper surface 5c of the frame 5 and the lower surface 6a of the lid 6 (here, the surface of the metallized layer 12). Thereafter, the heating is stopped (or the temperature is lowered), and the solder material 9a is solidified. As a result, a solder portion 9 in close contact with the frame 5 and the lid 6 (here, the metallized layer 12) is formed between the frame 5 and the lid 6, and a composite 8 consisting of the frame 5, the lid 6, and the joint 7 is obtained.

[0069] In this case, by keeping the solder material 9a and the metal paste material 10a in contact with each other, when the metal paste material 10a is formed into the metal particle bonded portion 10, the metal atoms contained in the metal particles diffuse into the liquefied solder material 9a. This changes the metal structure of the solder portion 9, and for example, the properties of the metal constituting the metal particles are contributed, improving the properties (melting point, ductility, etc.) of the solder portion 9. Specifically, the higher the melting point of the solder portion 9, the better its heat resistance, and the higher its ductility, the better its mechanical properties such as impact resistance.

[0070] (S6) Bonding process Next, the lower end surface 5d of the cylindrical portion 5a of the frame 5 of the composite 8 is placed on the base 4 on which the electronic component 2 is mounted. At this time, a solder material is applied as a bonding material to the lower end surfaces 5d of the base 4 and the frame 5. After placement, the base 4 and the frame 5 are heated to a temperature at which the solder material melts. This melts the solder material, bringing the base 4 and the frame 5 into close contact. Thereafter, the heating is stopped (or the temperature is lowered), and the solder material is solidified. As a result, a solder portion 9 in close contact with the base 4 and the frame 5 is formed between the base 4 and the frame 5, and an airtight package 3 composed of the base 4, the frame 5, and the lid 6, and an electronic device 1, which is the airtight package 3 in which the electronic component 2 is housed, are obtained (see FIG. 1 for both).

[0071] Alternatively, in addition to the above-described procedure, the following process can also be employed. First, an electronic component 2 is prepared on the base 4 of a structure in which the base 4 and the frame 5 are integrated. Then, a solder material 9a, which is the material for the solder portion 9 serving as the joint 7, is supplied to the upper surface 5c of the frame 5, and a metal paste material 10a, which is the material for the metal particle bonding portion 10 serving as the joint 7, is supplied to the upper surface 5c of the frame 5. Furthermore, a lid 6 is placed to cover the upper surface 5c. The structure and the lid 6 are then placed, for example, in a heating furnace and heated to a predetermined temperature. The heating is then stopped (or the temperature is lowered). This results in an airtight package 3 consisting of the base 4, the frame 5, and the lid 6, and an electronic device 1, which is the airtight package 3 that houses the electronic component 2. This allows the process of obtaining the intermediate composite 8 and the process of obtaining the final product, the airtight package 3 (electronic device 1), to be performed simultaneously. In this case, the solder material 9a and the metal paste material 10a may also be supplied to the lower surface 6a of the lid 6 obtained in step S1.

[0072] As described above, in the composite 8 and airtight package 3 according to this embodiment, the solder portion 9 and the metal particle bonding portion 10 are provided between the lid body 6 and the frame body 5, which are to be joined. Because the metal particle bonding portion 10 does not undergo a phase transition due to melting, there is virtually no risk of misalignment occurring during joining. Therefore, the lid body 6 can be joined to the frame body 5 while maintaining its position in the setting step S4. Furthermore, by providing the solder portion 9 between the lid body 6 and the frame body 5, the internal space 13 of the airtight package 3, defined by the lid body 6 and the frame body 5, can be sealed due to the effect of the highly airtight solder portion 9. Therefore, in the composite 8 and airtight package 3 according to this embodiment, the lid body 6 can be accurately fixed in a predetermined position on the frame body 5, and excellent airtightness can be imparted to the internal space 13 of the airtight package 3. Furthermore, because the lid body 6 and the frame body 5 are joined to each other by the solder portion 9 and the metal particle bonding portion 10, a sufficiently large joining force can be obtained between the lid body 6 and the frame body 5.

[0073] Furthermore, in this embodiment, the metal particle bonding portion 10 is formed over the entire peripheral edge of the lid body 6, and the solder portion 9 is provided outside the metal particle bonding portion 10, so that the metal particle bonding portion 10 can prevent the solder portion 9 (solder material 9a) from flowing toward the central region 6c of the lid body 6, which is the transmission region for infrared light L. This reliably prevents the solder portion 9 from flowing into the infrared light L transmission region of the lid body 6, and ensures the transmission function for infrared light L.

[0074] Although one embodiment of the present invention has been described above, the composite of the present invention, the airtight package including this composite, as well as the method for manufacturing the composite and the method for manufacturing the airtight package including this composite are not limited to the above embodiment and can take various forms within the scope of the present invention.

[0075] For example, in the above embodiment, the case where both the solder portion 9 and the metal particle bonding portion 10 are formed over the entire peripheral area of ​​the lid body 6 is exemplified, but of course this configuration is not limited to this. For example, if there is no need to consider the solder portion 9 (solder material 9a) flowing into the infrared light L transmitting area, the metal particle bonding portion 10 does not need to be provided over the entire peripheral area of ​​the lid body 6, nor does it need to be provided inside the solder portion 9. In other words, the metal particle bonding portion 10 can have any configuration as long as it is possible to enjoy the effect of preventing the lid body 6 from shifting and the effect of exerting a bonding strength with the frame body 5.

[0076] Furthermore, in the above embodiment, the case where the lower surface 6a of the lid 6 arranged on the joint 7 side has a flat shape across the entire surface has been illustrated, but the shape of the lid 6 is not limited to this. For example, although not shown, the lid 6 may be formed so that the peripheral region 6a1 of the lower surface 6a of the lid 6, where the joint 7 is formed, is closer to the upper surface 6b than the central region 6a2. In other words, the peripheral region of the lid 6 may be formed thinner than the central region 6c. Alternatively, a ring-shaped groove may be provided in at least one of the lower surface 6a of the lid 6 and the upper surface 5c of the frame 5, thereby preventing the solder portion 9 (solder material 9a) from flowing into the infrared light L transmitting region.

[0077] In the above description, the central region 6c of the lid 6 is flat on both the front and back sides and functions as a window that can directly transmit infrared light L, but the present invention is not limited to this. For example, although not shown in the drawings, the present invention may be applied to a case where the central regions 6a2, 6b2 of the lower surface 6a and the upper surface 6b each have a predetermined concave or convex curved shape so that the central region 6c of the lid 6 functions as a lens.

[0078] In the above description, the present invention is applied to an electronic device 1 in which the electronic component 2 is a laser element (e.g., a quantum cascade laser element) that emits infrared light L, but the application of the present invention is not limited to this. For example, the present invention can also be applied to an electronic device 1 in which the electronic component 2 is a light-receiving element that receives infrared light L. [Explanation of symbols]

[0079] 1 Electronic equipment 2. Electronic Components 3. Airtight packaging 4 Base 4a Main surface 5 Frame 5a Cylindrical part 5b Inner flange 5c Top 5d Lower end surface 6 Lid 6a Bottom side 6a1 Peripheral area 6a2,6b2 Central area 6b Top side 6c Central area 7 Joint 8 Complex 9 Soldering part 9a Solder material 10 Metal particle bonding part 10a Metallic paste material 11 Silicon layer 12 Metallization layer 13 Interior Space L Infrared light S1 Silicon layer formation process S2 Metallization layer formation process S3 Material Supply Engineering S4 セット Engineering S5 Joint Formation Engineering

Claims

1. A composite body including a frame body and a lid body provided on the frame body, the lid is formed of glass that is capable of transmitting infrared light, a solder portion and a metal particle bonding portion are provided between the lid body and the frame body, and the lid body and the frame body are bonded to each other by the solder portion and the metal particle bonding portion; The metal particle bonding portion is a composite configured such that the metal particles that make up the metal particle bonding portion are bonded to each other by a sintering action at a temperature lower than the melting point of the metal that makes up the solder portion.

2. The metal particle bonding portion is formed over the entire peripheral edge of the lid body, and The composite according to claim 1 , wherein the solder portion is provided outside the metal particle bonded portion.

3. The composite according to claim 1 or 2, wherein the solder portion is in contact with the metal particle bond portion.

4. 4. The composite according to claim 1, wherein the solder portion is formed of one or more metals selected from the group consisting of In, Sn, Bi, Ag, and Au.

5. 5. The composite according to claim 1, wherein the metal particles are formed of one or more metals selected from the group consisting of Au, Ag, and Cu.

6. 6. The composite according to claim 1, wherein the infrared light-transmitting glass is glass having an internal transmittance of 90% or more in a wavelength range of 3 to 14 μm at a thickness of 2 mm.

7. 7. The composite member according to claim 1, wherein the glass capable of transmitting infrared light is a chalcogenide glass.

8. 8. The composite according to claim 7, wherein the chalcogenide glass contains, by mole percentage, 50 to 80% of S, 0 to 40% (but not including 0%) of Sb, 0 to 18% (but not including 0%) of Ge, 0 to 20% of Sn, and 0 to 20% of Bi.

9. 8. The composite according to claim 7, wherein the chalcogenide glass contains, by mole percentage, 4 to 80% Te, 0 to 50% (but not including 0%) Ge, and 0 to 20% Ga.

10. 10. The composite according to claim 1, wherein at least a portion of the lid is a window that is capable of transmitting infrared light.

11. The composite according to any one of claims 1 to 10, wherein at least a part of the lid is a lens that is capable of transmitting infrared light.

12. An airtight package comprising: a substrate having a main surface; and the composite according to any one of claims 1 to 11 provided on the main surface of the substrate.

13. A method for manufacturing a composite body comprising a frame body, a lid body provided on the frame body and formed of glass that is capable of transmitting infrared light, and a joint portion that joins the lid body and the frame body to each other by a solder portion and a metal particle joint portion interposed between the lid body and the frame body, When a material for the joint is supplied to a surface of the frame or a surface of the lid, the lid is set at a predetermined position on the frame, and then the material for the joint is heated to form the joint, A method for manufacturing a composite, comprising heating a metal paste material, which is the material for the metal particle bonding portion, supplied to the surface of the frame body or the surface of the lid body, to form the metal particle bonding portion between the frame body and the lid body, and then cooling and solidifying a solder material, which is the material for the solder portion, supplied to the surface of the frame body or the surface of the lid body, from a molten state, to form the solder portion between the frame body and the lid body.

14. A composite body comprising a frame body and a lid body provided on the frame body, the lid is formed of glass that is capable of transmitting infrared light, a silicon layer is provided on a surface of the lid body, and a metallized layer is provided on the surface of the silicon layer; a solder portion and a metal particle bonding portion are provided between the metallized layer of the lid body and the frame body, A composite body in which the metallized layer of the lid body and the frame body are joined to each other by the solder portion and the metal particle bonding portion.

Citation Information

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