Prevents localized plasma arcing through the purge ring

Abstract

The purge ring includes a supply port configured to receive gas. The outer channel is connected to the supply port. The outlet network is configured for an outlet flow of gas proximate an inner diameter of the purge ring. The purge ring includes a plurality of channels configured to flow gas radially from the outer channel to the outlet network. The purge ring includes a plurality of passages configured to reduce gas flow in the radial direction between the outer channel and the outlet network. The plurality of channels and passages are configured to provide a uniform pressure for the outlet flow of gas around the entire circumference of the outlet network.

Description

[Technical Field]

[0001] The present embodiments relate to semiconductor substrate processing equipment tools, and more particularly to a purge ring configured to symmetrically distribute inert gas around a wafer. [Background technology]

[0002] Improving film uniformity is important in plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (ALD) technologies. Chamber systems performing PECVD and ALD processes can introduce non-uniformities due to various causes. In particular, multi-station modules performing PECVD and ALD feature large, open reactors that can contribute to azimuthal non-uniformity and edge drop effects. Non-uniformities also exist in single-station modules. For example, standard pedestal configurations do not provide the desired flow profile and / or material conditions near the wafer edge during plasma processing. In particular, standard pedestal configurations can generate charge at the wafer edge during PECVD and / or ALD processes, which can lead to discharge or arcing from the wafer to the ceramic pedestal during processing, resulting in wafer non-uniformity and / or pedestal damage. As the die moves increasingly closer to the wafer edge, wafer non-uniformity at the edge can have a significant negative impact on yield, for example. Despite best efforts to minimize pedestal damage and / or non-uniform deposition profiles, conventional PECVD and plasma-enhanced ALD schemes still need improvement.

[0003] The background description provided herein is intended to present the contents of the present disclosure generally. Work by the currently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] It is in this context that embodiments of the present disclosure arise. Summary of the Invention

[0005] The present embodiments are directed to solving one or more problems found in the related art, particularly to performing semiconductor processes that involve locally diluting the plasma sheath around the wafer using a distribution network or secondary internal passages and / or plenums and a ceramic purge ring configured with radial internal passages and / or plenums designed to deliver inert gas through a channel volume, thereby enabling symmetric distribution of inert gas around the wafer by delivering the inert gas at a precise and controlled mass flow rate around the wafer. Several inventive embodiments of the present disclosure are described below.

[0006] A deposition chamber (e.g., PECVD, ALD, etc.) includes one or more stations having a radio frequency (RF) source, a wafer, and a grounded surface opposite the source. A purge ring is used to reduce and / or prevent excess charge buildup at the wafer edge during the deposition process. In an embodiment of the present disclosure, a purge ring with a single gas input port reduces charge on the wafer edge, thereby reducing the probability of discharge or arcing from the wafer to the ceramic pedestal during deposition processing.

[0007] An embodiment of the present disclosure includes a purge ring. The purge ring includes a supply port configured to receive a gas. The purge ring includes an outer channel connected to the supply port. The purge ring includes an outlet network configured for outlet flow of the gas proximate an inner diameter of the purge ring. The purge ring includes a plurality of channels configured to flow gas radially from the outer channel to the outlet network. The purge ring includes a plurality of passages configured to reduce gas flow in the radial direction between the outer channel and the outlet network. The plurality of channels and passages are configured to provide a uniform pressure and / or velocity of the outlet flow of the gas throughout the circumference of the outlet network.

[0008] Another embodiment of the present disclosure includes a pedestal assembly for a process chamber for depositing a film. The pedestal assembly includes a pedestal for supporting a substrate and a purge ring configured to be mounted on a periphery of the pedestal. The purge ring includes a pedestal for supporting the substrate. The purge ring includes a supply port configured to receive a gas. The purge ring includes an outer channel connected to the supply port. The purge ring includes an outlet network configured for an outlet flow of gas proximate an inner diameter of the purge ring. The purge ring includes a plurality of channels configured to flow gas radially from the outer channel to the outlet network. The purge ring includes a plurality of passages configured to reduce the flow of gas in the radial direction between the outer channel and the outlet network. In the purge ring, the plurality of channels and passages are configured to provide a uniform pressure and / or velocity of the outlet flow of gas throughout the entire circumference of the outlet network.

[0009] Yet another embodiment of the present disclosure includes a process chamber. The process chamber includes multiple stations, each including a pedestal assembly. Each pedestal assembly includes a pedestal for supporting a substrate, a purge ring configured to be mounted around the periphery of the pedestal, and a gas distribution system for distributing gas to each pedestal assembly of the multiple stations with a uniform gas flow. The purge ring includes a supply port configured to receive gas. The purge ring includes an outer channel connected to the supply port. The purge ring includes an outlet network configured for an outlet flow of gas proximate an inner diameter of the purge ring. The purge ring includes multiple channels configured to flow gas radially from the outer channel to the outlet network. The purge ring includes multiple passages configured to reduce the flow of gas in the radial direction between the outer channel and the outlet network. In the purge ring, the multiple channels and passages are configured to provide a uniform pressure and / or velocity of the outlet flow of gas throughout the entire circumference of the outlet network.

[0010] These and other advantages will be appreciated by those skilled in the art upon reading the entire specification and claims. [Brief explanation of the drawings]

[0011] The embodiments may be best understood by referring to the following description taken in conjunction with the accompanying drawings.

[0012] [Figure 1] FIG. 1 is a diagram illustrating a substrate processing system used to process wafers, for example, to form films on wafers.

[0013] [Figure 2A] FIG. 2A is a top view of a multi-station processing tool with four processing stations, according to one embodiment.

[0014] [Figure 2B] FIG. 2B is a perspective view of the multi-station processing tool of FIG. 2A according to one embodiment of the present disclosure.

[0015] [Figure 3] FIG. 3 is a schematic diagram of an embodiment of a multi-station processing tool having an inbound load lock and an outbound load lock, according to one embodiment.

[0016] [Figure 4A] FIG. 4A is a cross-sectional top view of a purge ring configured to symmetrically distribute inert gas around a wafer according to one embodiment of the present disclosure.

[0017] [Figure 4B] FIG. 4B is a cross-sectional top view of a purge ring configured to distribute inert gas symmetrically around a wafer, illustrating the flow of gas around one or more passages, according to one embodiment of the present disclosure.

[0018] [Figure 4C]FIG. 4C is a table listing an exemplary number of channels and exemplary widths of the channels in a purge ring configured to symmetrically distribute inert gas around a wafer, according to one embodiment of the present disclosure.

[0019] [Figure 4D] FIG. 4D is a graph showing gas velocity versus angular position on a purge ring configured to distribute inert gas symmetrically around a wafer, according to one embodiment of the present disclosure.

[0020] [Figure 5A] FIG. 5A is a perspective view including a cross section of a purge ring configured to symmetrically distribute purge gas around a wafer according to one embodiment of the present disclosure, the purge ring including an outlet network including multiple orifices configured for the outflow of gas delivered from the distribution volume.

[0021] [Figure 5B] FIG. 5B is another perspective view with a cross section of the purge ring shown in FIG. 5A according to one embodiment of the present disclosure.

[0022] [Figure 5C] FIG. 5C is a perspective view including a cross section of a purge ring configured to symmetrically distribute inert gas around a wafer according to one embodiment of the present disclosure, the purge ring including an outlet network including outlet channels configured for the outflow of gas delivered from the distribution volume.

[0023] [Figure 5D] FIG. 5D is a perspective view including a cross section of a purge ring configured to symmetrically distribute inert gas around a wafer according to one embodiment of the present disclosure, the purge ring including an outlet network including a series of outlet ports arranged on an inner ledge, the outlet ports configured for the outflow of gas delivered from the distribution volume.

[0024] [Figure 6A-1]FIG. 6A-1 is a cross-sectional view along line A--A in FIG. 4A of a channel in a distribution volume of a purge ring configured to symmetrically distribute inert gas around a wafer, according to one embodiment of the present disclosure, with the outlet channel configured in a downward and inward orientation.

[0025] [Figure 6A-2] FIG. 6A-2 is a cross-sectional view of channels in a distribution volume of a purge ring configured to distribute inert gas symmetrically around a wafer, with outlet channels configured in a downward and outward orientation, according to one embodiment of the present disclosure.

[0026] [Figure 6A-3] FIG. 6A-3 is a cross-sectional view of a channel in a distribution volume of a purge ring configured to symmetrically distribute inert gas around a wafer, with the outlet channel configured in an upward and inward orientation, according to one embodiment of the present disclosure.

[0027] [Figure 6A-4] FIG. 6A-4 is a cross-sectional view of a channel in a distribution volume of a purge ring configured to distribute inert gas symmetrically around a wafer, with the outlet channels configured in an upward and outward orientation, according to one embodiment of the present disclosure.

[0028] [Figure 6B] FIG. 6B is a cutaway view including a cross section of a purge ring configured to symmetrically distribute inert gas around the wafer.

[0029] [Figure 6C] FIG. 6C is a cross-sectional view along line B--B of FIG. 4A of a passage in a distribution volume of a purge ring configured to symmetrically distribute inert gas around a wafer according to one embodiment of the present disclosure.

[0030] [Figure 7]FIG. 7 illustrates a gas distribution system for distributing gas with uniform gas flow to multiple station pedestal assemblies within a process chamber, each of which includes a purge ring configured to symmetrically distribute inert gas around the wafer, according to one embodiment of the present disclosure.

[0031] [Figure 8A] FIG. 8A is a cross-sectional view of a pedestal assembly including a purge ring configured to symmetrically distribute inert gas around a wafer and a conduit for delivering gas to the purge ring, according to one embodiment of the present disclosure.

[0032] [Figure 8B] FIG. 8B is a cross-sectional view of a bonding interface connecting a gas conduit to a ceramic purge ring configured to symmetrically distribute inert gas around the wafer and to a conduit for delivering gas to the purge ring, according to one embodiment of the present disclosure.

[0033] [Figure 8C] FIG. 8C is a cross-sectional view of a flow resistor configured within a conduit for delivering gas to a purge ring configured to symmetrically distribute inert gas around a wafer, and a conduit for delivering gas to the purge ring, according to one embodiment of the present disclosure.

[0034] [Figure 8D] FIG. 8D is a cross-sectional view of a pedestal assembly including a purge ring configured to symmetrically distribute inert gas around a wafer according to one embodiment of the present disclosure.

[0035] [Figure 9A] FIG. 9A is a top view of a multi-station processing tool having four processing stations according to one embodiment of the present disclosure, illustrating a gas distribution system for distributing gas to each pedestal assembly of the multiple stations with uniform gas flow.

[0036] [Figure 9B]9B is a top view of a chamber insert of a multi-station processing tool having four processing stations according to one embodiment of the present disclosure, showing the gas distribution system of FIG. 9A routed through openings in the station partitions of the chamber.

[0037] [Figure 9C] Figure 9C is a bottom view of a chamber insert of a multi-station processing tool having four processing stations according to one embodiment of the present disclosure, showing the gas distribution system of Figure 9A routed through openings in the station partitions of the chamber.

[0038] [Figure 10] FIG. 10 is a diagram showing a control module for controlling the above-described system. DETAILED DESCRIPTION OF THE INVENTION

[0039] Although the following detailed description includes many specific details for purposes of illustration, those skilled in the art will appreciate that many variations and modifications to the following details are within the scope of the present disclosure. Accordingly, the aspects of the present disclosure described below are set forth without loss of generality to, and without imposing limitations on, the claims that follow this description.

[0040] Generally speaking, various embodiments of the present disclosure describe systems for improving film uniformity during wafer processing (e.g., PECVD and ALD processes) in single-station and multi-station systems. In particular, various embodiments of the present disclosure describe a pedestal assembly including a ceramic purge ring that locally dilutes the plasma sheath around the wafer. The purge ring is designed to deliver a precise amount of inert gas flow during the deposition process. Through the purge ring, a sufficient inert mass gas flow is introduced around the wafer, such as during a plasma-enhanced chemical vapor deposition (PECVD) process, to prevent excessive charge buildup at the wafer edge. PECVD processes are used to deposit thin films on substrates through a chemical reaction of gases that creates a plasma. In this way, this reduction in charge on the wafer edge reduces the probability of discharge or arcing from the wafer to the ceramic pedestal during processing, which in some embodiments improves wafer uniformity, particularly at the wafer edge. In particular, the purge ring is constructed of a high-temperature ceramic configured to withstand temperatures in the range of 650°C, allowing the purge ring to deliver inert gas around the wafer. The ceramic purge ring geometry utilizes laminated ceramic technology to create a distribution of internal radial passages and / or plenums for delivering inert gas to the distribution volume of secondary internal passages and / or plenums and channels. These internal channels are formed using laminated ceramic technology, creating a geometry for a variable flow path for the inert gas. In one embodiment, a precise pattern of orifices around the ring's periphery delivers inert gas at a precise and controlled mass flow rate to the periphery of the wafer. In one embodiment, a single inert gas supply port is provided for efficiency within the process chamber. Previously, the mass flow distribution in purge rings with a single inert gas supply port was inherently highly asymmetric, with high gas flow near the supply port and reduced gas flow around the periphery of the purge ring until it reached a point opposite the supply port. However, embodiments of the present disclosure provide a purge ring configured to vary the flow of gas around the periphery of the purge ring.In particular, the purge ring of the present disclosure is configured to provide a variable fluid flow approach that corrects the mass flow distribution for symmetric distribution around the wafer. This is achieved through the design of multiple internal flow passages and / or conductance channels, one or more orifices that allow gas evacuation, selection of the appropriate type of one or more orifices, selection of a desired number of one or more orifices, orifice shape, size, and diameter, etc. In yet other embodiments, in addition to arc suppression, embodiments of the present disclosure may potentially be utilized to prevent backside carbon deposition through dilution of CH.

[0041] An advantage of various embodiments disclosing a process chamber including one or more pedestal assemblies at one or more stations and a corresponding purge ring configured to symmetrically distribute inert gas around the wafer (e.g., deliver a flow of gas at a uniform pressure azimuthally around the wafer periphery and / or deliver a flow of gas at a uniform velocity or speed azimuthally around the wafer periphery) is that it provides a more economical and efficient delivery of gas to one or more stations within the process chamber. Additionally, each of the purge rings uses a single supply port (e.g., a purge inlet) and an appropriate configuration of the distribution volume of the passages and channels around the wafer to provide a more efficient delivery of gas within the purge ring.

[0042] With the above general understanding of the various embodiments, illustrative details of the embodiments will now be described with reference to the various drawing figures. Similar numbered elements and / or components in one or more figures are generally intended to have the same configuration and / or function. Moreover, the figures may not be drawn to scale, but are intended to illustrate and emphasize novel concepts. It will be apparent that the present embodiments can be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail so as not to unnecessarily obscure the present embodiments.

[0043] FIG. 1 illustrates a reactor system 100 that can be used to deposit a film on a substrate, such as a film formed in a PECVD or ALD process. More specifically, FIG. 1 illustrates a substrate processing system 100 used to process a wafer 101. The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. A central column is configured to support a pedestal 140, which in one embodiment is a powered electrode. The pedestal 140 is electrically coupled to a power supply 104 via a matching network 106. The power supply is controlled by a control module 110, e.g., a controller. The control module 110 is configured to operate the substrate processing system 100 by executing process inputs and controls 108. The process inputs and controls 108 may include, for example, a process recipe for depositing or forming a film on the wafer 101, including power levels, timing parameters, process gases, purge gases to a purge ring, mechanical movement of the wafer 101, etc.

[0044] A central column (e.g., also known as a central shaft or spindle) 160 can interface with lift pins (not shown), each of which is actuated by a corresponding lift pin actuation ring 120 controlled by a lift pin control 122. The lift pins are used to raise the wafer 101 from the pedestal 140, allowing a robot arm (e.g., an end effector, etc.) to deliver (e.g., load) the wafer to a process chamber and / or remove (e.g., unload) the wafer from the process chamber 250. In one embodiment, for example, a ringless wafer delivery system is implemented, configured to transfer wafers between stations without the use of a carrier ring. The substrate processing system 100 further includes a gas supply manifold 112 connected to process gases 114, e.g., a gas chemical supply from the facility. Depending on the process being performed, the control module 110 controls the delivery of the process gases 114 through the gas supply manifold 112. The selected gas is then flowed into the showerhead 150 and distributed into the volume of space defined between the face of the showerhead 150 facing the wafer 101 and the wafer 101 resting on the pedestal 140. In an ALD process, the gas may be a reactant selected for absorption or reaction with an absorbed reactant.

[0045] Additionally, the gases may or may not be premixed. Appropriate valving and mass flow control mechanisms can be used to ensure the correct gases are delivered during the deposition and plasma treatment stages of the process. The process gases exit the chamber through an outlet. A vacuum pump (e.g., a one- or two-stage mechanical dry pump and / or turbomolecular pump) draws the process gases and maintains an appropriately low pressure within the reactor through a closed-loop control flow-restricting device such as a throttle valve or pendulum valve.

[0046] Also shown is a purge ring 200 that surrounds the exterior and / or peripheral region of the pedestal 140. In one embodiment, the purge ring 200 is positioned below the wafer 101 disposed on the pedestal 140, as shown in FIG. 1 . The purge ring 200 is designed to deliver a purge gas (e.g., an inert gas, nitrogen, etc.) to the wafer edge to reduce and / or prevent excess charge buildup at the wafer edge during the deposition process. The purge gas is delivered from a gas supply line 840 connected to a gas delivery system. In one embodiment, the purge ring 200 remains within the station and is not rotated between stations, e.g., in a multi-station processing chamber and / or system. In other embodiments, the chamber is a single-station chamber. The controller 110 and / or the process input and controls 108 can be used to control the delivery of purge gas to the purge ring.

[0047] FIG. 2A shows a top view of a multi-station processing tool 250 with four processing stations. This top view shows the lower chamber portion 102b (e.g., the upper chamber portion 102a has been removed for illustrative purposes), and the four stations (e.g., stations 1, 2, 3, and 4) can be accessed, for example, by a ringless wafer delivery system configured to transfer wafers between the stations without the use of a carrier ring. The ringless wafer delivery system includes one or more paddles 225, each configured to interface with a corresponding wafer lifted from a pedestal using, for example, lift pins. The ends of the paddles 225 can include three dynamic wafer contact pads 226 configured to interface with the underside of a wafer, such as when transferring the wafer from one station to another. The ends of the paddles 225 can articulate to provide additional movement when orienting the corresponding paddle under a corresponding wafer. Each paddle can be rotated (e.g., in unison) using the rotation mechanism 220, so that wafers introduced into the stations from within the chamber 250 (e.g., by using a robotic arm to load and / or unload wafers between station 1 and the load lock) can be transferred and / or rotated from station to station using a ringless wafer delivery system, thereby allowing further plasma processing, treatments, and / or film deposition, wafer delivery and / or removal to be performed on each wafer 101.

[0048] Openings 210 are shown in station partition walls 211 of multi-station processing tool 250, which separate each of the stations. In one embodiment, openings 210 can be used to route gas supply conduits or gas delivery structures 710 within the multi-station processing tool, as described further below with reference to Figures 9A-9C. Gas supply conduits 710 are included within a gas distribution system utilized to deliver purge gas to each of the stations, as described further with reference to Figure 7.

[0049] FIG. 2B shows a perspective view of the multi-station processing tool 250 introduced in FIG. 2A in accordance with one embodiment of the present disclosure. More specifically, the lower chamber portion 102b is shown without the pedestal assembly (e.g., pedestal 140, purge ring 200, spindle 160, etc.) to fully visualize the interior volume of each station. For example, opening 210 is clearly shown in FIG. 2B. Also shown is a central hole 215, configured to accept a rotation mechanism used to index a wafer to a particular station.

[0050] 3 shows a schematic diagram of one embodiment of the multi-station processing tool 250 of FIGS. 2A-2B having an inbound load lock 302 and an outbound load lock 304. A robot 306 is configured to transfer substrates at atmospheric pressure from a cassette loaded via a pod 308 to the inbound load lock 302 via an atmospheric pressure port 310. The inbound load lock 302 is coupled to a vacuum source (not shown) so that the inbound load lock 302 can be pumped down when the atmospheric pressure port 310 is closed. The inbound load lock 302 also includes a chamber transfer port 316 that interfaces with the processing chamber 102b. Thus, the chamber transfer port Once 316 is open, another robot (not shown) (eg, a ring-less wafer delivery system) can move the substrate from the inbound load lock 302 to the pedestal 140 of the first process station for processing.

[0051] The illustrated multi-station processing chamber 250 includes four process stations, numbered 1 through 4 in the embodiment shown in FIG. 3. Each of the process stations illustrated in FIG. 3 includes a purge ring 200 and a process gas delivery line inlet or purge inlet (not shown). The purge ring is configured to reduce and / or prevent excess charge buildup at the wafer edge during the deposition process. Reducing the charge on the wafer edge reduces the probability of discharge or arcing from the wafer to the ceramic pedestal during processing, thereby improving wafer uniformity, particularly at the edge of the wafer.

[0052] 4A illustrates a top view of a horizontal cross section of a purge ring 200 according to one embodiment of the present disclosure. In this embodiment, the purge ring 200 is configured to symmetrically and radially distribute purge gas (e.g., an inert gas) around the wafer. In particular, the purge ring 200 is configured to dilute the plasma sheath around the wafer during processing (e.g., deposition) and is configured to deliver gas through passages and channels radially throughout the purge ring with symmetric flow at all points around the circumference 410 of the purge ring, which may be aligned with an outlet network configured for the exit of gas to the wafer periphery. Specifically, the purge ring is configured to deliver a flow of gas at a uniform pressure azimuthally around the wafer periphery and / or a uniform velocity or speed azimuthally around the wafer periphery.

[0053] The purge ring 200 is configured to deliver gas (e.g., purge gas, inert gas, nitrogen, N, steam, etc.) to the edge of a wafer (not shown) under extreme conditions (e.g., high temperature, high pressure, etc.). In one embodiment, the purge ring 200 includes a single supply port or purge inlet 420 configured to receive gas from a gas distribution system (not shown). The purge ring 200 is configured to provide a flow of purge gas sufficient to replace process gas (e.g., argon, C3H6, etc.) at the wafer edge during processing (e.g., deposition) and, more particularly, to prevent arcing (e.g., discharge) from the wafer edge to the pedestal. That is, arcing due to electrostatic discharge from the wafer to the pedestal is reduced and / or eliminated by reducing the process gas at the wafer edge through the introduction of purge gas at the wafer edge.

[0054] As shown in FIG. 4A , the purge ring 200 includes a supply port or purge inlet 420 configured to receive a gas (e.g., a purge gas, an inert gas, nitrogen, etc.), which in some embodiments is in the form of a vapor. The purge ring also includes an outer channel 450 connected to the supply port 420. In one embodiment, the outer channel 450 is configured proximate an outer diameter 470 of the purge ring 200. The outer channel 450 distributes the purge gas around the purge ring during the first stage of gas distribution. For example, the outer channel 450 exhibits low fluid resistance to allow circumferential flow of the purge gas throughout the outer channel. In this manner, the gas reaches pressure equilibrium within the outer channel 450 before entering or leaking radially into the multiple channels and passages during the second stage of gas distribution. That is, the outer channel 450 is configured to achieve pressure equilibrium before radial flow of gas to the outlet network occurs. As shown, input gas flow 435, provided as an input from purge inlet 420, flows in opposite directions within outer channel 450. That is, after entering purge ring 200 through purge inlet 420, gas flows in a counterclockwise direction within outer channel 450 from the purge inlet (e.g., toward the top half of purge ring 200) and also flows in a clockwise direction within outer channel 450 (e.g., toward the bottom half of purge ring 200).

[0055] The purge ring 200 includes an outlet network 460 configured for gas outlet flow proximate an inner diameter 475 of the purge ring 200. For example, the outlet network 460 can be of any configuration that provides symmetrical gas outflow at all points around the wafer edge. That is, the gas pressure is uniform throughout the outlet network 460, providing symmetrical gas outflow. That is, the gas flow is delivered azimuthally around the wafer periphery (e.g., the circumference of the purge ring) with uniform pressure and / or the gas flow is delivered azimuthally around the wafer periphery with uniform velocity or speed. The uniform distribution of gas to the wafer edge helps prevent arcing from the wafer edge at all points around the pedestal due to electrostatic discharge that can build up on the wafer edge from process gases. In some cases, this enables uniform film deposition across the entire wafer during processing, including in areas proximate to the wafer edge.

[0056] The purge ring includes a plurality of channels 490 and a plurality of passages 430 connecting the outer channels 450 and the outlet network 460. The channels and passages are configured to distribute purge gas evenly to the outlet network 460 around a circumference 410 associated with the outlet network 460. Specifically, the channels and passages are configured to provide a radially and symmetrical flow of purge gas at all points on the circumference 410 that define the outlet network 460, the circumference being located proximate to the inner diameter 475 of the purge ring 200. That is, the channels and passages deliver gas with a uniform gas flow to all points on the circumference 410 associated with the outlet network 460. More specifically, the channels and passages are configured to provide a uniform pressure of the outlet flow of gas in an azimuth direction around the circumference 410 of the outlet network 460 (e.g., at the delivery points). Correspondingly, the channels and passages are configured to provide a uniform velocity (e.g., velocity magnitude) of the outlet flow of gas around or across the circumference 410 of the outlet network 460. In this manner, the outlet network 460 can deliver gas to the wafer edge uniformly radially and symmetrically. That is, embodiments of the present disclosure deliver gas with uniform pressure and / or velocity azimuthally around the circumference of a purge ring configured with an asymmetric geometry. For example, the pressure can be calculated to allow the gas delivered by the purge ring to overcome adverse pressure gradients and avoid backside deposition on the wafer.

[0057] In one embodiment, purge ring 200 is symmetrically configured about line 440 such that the channels and passages are symmetrically configured between the two halves of purge ring 200 defined by line 440. More specifically, line 440 may represent a plane of symmetry about which the two halves of purge ring 200 (e.g., above and below the plane) are symmetrically configured. As shown, line 440 (which may represent a plane of symmetry) may define a radius originating from center 441. For example, purge inlet 420 is located at a 0-degree radial position on line 440. Also, on the opposite side of purge inlet 420, line 440 defines a 180-degree radial position (e.g., the center of passage 430I).

[0058] In particular, in the plurality of passages 430, each passage is configured to reduce the radial flow of gas between the outer channel and the outlet network. That is, the passage restricts the radial flow of gas into the outlet network 460. For example, the passage blocks, redirects, and / or restricts the free flow of purge gas within, at, and around the passage. In one embodiment, the passage comprises a plenum including a structure configured to reduce the flow of gas. In another embodiment, the passage comprises a porous medium, which can be defined as any medium having pores (e.g., holes, etc.). In yet another embodiment, a portion of the passage comprises a solid medium. As shown in FIG. 4A , the center of passage 430A is located at 0 degrees on line 440. Additional passages are configured within purge ring 200. In addition to passage 430A, which moves counterclockwise, purge ring 200 includes passage 430B, passage 430C, passage 430D, passage 430F, passage 430G, passage 430H, and passage 430I. More specifically, the center of passage 430I is located 180 degrees on line 440.

[0059] In one embodiment, the passages in the plurality of passages 430 decrease in size (e.g., radial width) as one moves radially around the circumference 410 of the purge ring 200 until one reaches a point on the circumference opposite the supply port or purge inlet 420 (e.g., 180 degrees). In particular, the radial width of a first passage centered at a radial distance from the purge ring inlet is smaller than the radial width of a second passage centered at a radial distance closer to the purge ring inlet. For example, the radial width of passage 430I is smaller than the radial width of at least one of passage 430H, or passage 430G, or passage 430F, or passage 430E, or passage 430D, or passage 430C, or passage 430B. Due to symmetry constraints with respect to the line and / or plane of symmetry 440, passage 430A may be smaller than at least one of passage 430I, or passage 430H, or passage 430G, or passage 430f, or passage 430E, or passage 430D, or passage 430C, or passage 430B.

[0060] In one embodiment, at least a portion of the passage centers may be uniformly distributed (e.g., symmetrically distributed radially) across the circumference 410 of the purge ring 200. In another embodiment, the passages are asymmetrically distributed around the circumference 410 of the purge ring 200.

[0061] As previously mentioned, purge ring 200 may exhibit symmetry about line of symmetry 440, which may define a plane of symmetry about which the two halves of the purge ring may be identical. Thus, the lower half of purge ring 200 located below line of symmetry 440 and / or plane of symmetry may be configured similarly to the upper half of purge ring 200 located above said line of symmetry and / or plane 440, starting from the center of passage 430A located at 0 degrees, ending at the center of passage 430I located at 180 degrees, and moving in a clockwise direction. That is, passages above line of symmetry and / or plane 440 may be configured similarly to passages located below line of symmetry and / or plane 440.

[0062] The spacing between two passages defines a channel. In particular, purge ring 200 includes a plurality of channels 490, each configured to radially flow gas from outer channel 450 to outlet network 460. For example, a channel may be configured to allow unrestricted flow of gas from outer channel 450 to outlet network 460. As shown, channel 1 is formed between passages 430A and 430B, channel 2 is formed between passages 430B and 430C, channel 3 is formed between passages 430C and 430D, channel 4 is formed between passages 430D and 430E, channel 5 is formed between passages 430E and 430F, channel 6 is formed between passages 430F and 430G, channel 7 is formed between passages 430G and 430H, and channel 8 is formed between passages 430H and 430I.

[0063] In one embodiment, the passageway is defined by the width of the channel (e.g., circumference directional width) based on the distance from the purge inlet 420 circumference In particular, the channels are configured to increase in size around the circumference 410 of the purge ring until they reach a point (e.g., 180 degrees) on the circumference opposite the supply port or purge inlet 420. circumference When moving in a direction circumference That is, channels closer to the purge inlet 420 (e.g., less than 90 degrees from the purge inlet 420 located at 0 degrees) have a smaller width (e.g., circumference In particular, the width from the purge ring inlet circumference of the first channel centered on the directional distance circumference The width is closer to the purge ring inlet. circumference of the second channel centered on the directional distance circumference For example, channel 8 circumference The width of the direction must be at least one of channel 7, or channel 6, or channel 5, or channel 4, or channel 3, or channel 2, or channel 1. circumferencegreater than the direction width.

[0064] In one embodiment, the channels are symmetrically distributed around the circumference 410 of the purge ring 200 (e.g., at least some of the centers of the channels may be equidistant from one another). In another embodiment, the channels are asymmetrically distributed around the circumference 410 of the purge ring 200.

[0065] In some embodiments, the multiple channels and multiple passages are configured within a distribution volume 480 that connects the outer channel 450 and the outlet network 460. The distribution volume is configured to evenly distribute the purge gas to the outlet network 460 around the circumference 410 associated with the outlet network 460. Specifically, the distribution volume 480 is configured to provide a radially and symmetrical flow of purge gas at all points on the circumference 410 that defines the outlet network 460, the circumference being located proximate the inner diameter 475 of the purge ring 200. That is, the distribution volume 480 delivers gas with a uniform gas flow to all points on the circumference 410 associated with the outlet network 460. In this manner, the outlet network 460 can deliver gas to the wafer edge in a uniformly radially and symmetrical manner.

[0066] As previously described, gas supplied as input to the purge ring 200 at the purge inlet 420 first flows throughout the outer channel 450 in a first stage. For example, the input gas flow 435 flows in the opposite direction from the purge inlet 420 through the outer channel 450, as previously described. Thus, the input gas flow 435 flows throughout the outer channel 450 until a pressure equilibrium is reached, at which point purge gas leaks radially into the channels and passages in a second stage. Further discussion of the individual and combined operation of the channels and passages in the second stage is provided in FIG. 4B , which shows a cross-sectional top view of a purge ring 200 configured to symmetrically distribute gas (e.g., purge gas, inert gas, N2, nitrogen, etc.) around a wafer, according to one embodiment of the present disclosure. In particular, the multiple passages 430 and multiple channels 490 are configured to provide a uniform pressure and / or velocity of the outlet flow of gas across the circumference 410 of the outlet network 460.

[0067] FIG. 4B illustrates gas flow around one or more passages according to one embodiment of the present disclosure. The passages are configured to block, redirect, and / or restrict the free flow of purge gas within the passages. For example, gas is shown entering each of a plurality of passages 430 from outer channel 450, and each passage is configured to reduce gas flow in a radial direction between outer channel 450 and outlet network 460. For example, gas flow may be primarily non-radial within each of the passages. That is, gas flow in the corresponding passage may not follow a direct path to outlet network 460, such as toward the center 441 of purge ring 200. Instead, gas flows in various directions within the corresponding passage, as indicated by arrows in each passage indicating gas redirection, such as toward an adjacent channel. For example, passage 430B between channel 1 and channel 2 illustrates gas being redirected toward both adjacent channels. Also, some of the gas may be directed to some extent toward outlet network 460, such as toward the center of the purge ring, depending on the configuration of the passages.

[0068] Also, in the second stage, the open channel design allows the flow of gas through each of the channels to be unrestricted, allowing the purge gas to flow freely and / or directly toward the outlet network 460, e.g., toward the center of the purge ring 200. That is, the channels are configured to allow gas to flow radially from the outer channels 450 to the outlet network 460.

[0069] Thus, the multiple passages 430 and multiple channels within the distribution volume 480, and the configuration of the passages and channels within the distribution volume, provide a symmetrical and balanced radial flow of purge gas throughout the circumference 410 associated with the outlet network 460 of the purge ring 200, using only one supply port or purge inlet 420. Without the configuration of the passages and / or channels, there would be an asymmetric distribution of gas throughout the purge ring, such as more gas flowing from outlet ports of the outlet network 460 closer to the purge inlet 420 (e.g., within 90 degrees of the purge inlet) and less gas flowing from outlet ports of the outlet network further away from the purge inlet 420 (e.g., more than 90 degrees from the purge inlet).

[0070] However, the configuration of the passages and / or channels of embodiments of the present disclosure (e.g., multiple internal flow paths and / or conductance channels, one or more outlet openings or ports in the outlet network, the shape of the outlet openings or ports, etc.) allows the purge ring 200 to provide a symmetric and balanced radial flow of gas using one supply port or purge inlet 420. Specifically, the configuration of the passages and / or channels provides a variable flow rate of fluid throughout the purge ring to provide a symmetric radial distribution of gas around the inner diameter 475 of the purge ring 200, and more specifically around the circumference 410 associated with the outlet network 460 of the purge ring 200.

[0071] In particular, a plurality of vectors F(v) exist around the inner diameter 475 of the purge ring 200. Each of the vectors may originate at a corresponding point on the circumference 410 associated with the outlet network 460 and have a direction toward the center 441 of the purge ring 200. That is, each vector F(v) originates at a corresponding outlet network, such as an outlet opening, orifice, outlet port, or aperture, and has a corresponding direction toward the center 441. Thus, the vectors F(v) are distributed around the circumference 410 of the purge ring associated with the outlet network 460.

[0072] Additionally, the configuration of the passages and / or channels provides a symmetric radial distribution of gas from the outlet network. That is, the flow of gas at each point on the circumference 410 associated with the outlet network 460 is uniform, thereby causing each of the plurality of vectors F(v) to have approximately equal magnitude. For example, the velocity circle 425 exhibits approximately equal velocities (e.g., magnitudes) for all vectors F(v), and the distance along each vector between the circumference 410 and the velocity circle 425 is approximately equal at all radial lines of the purge ring 200. That is, each of the vectors F(v) has approximately the same velocity. As previously introduced, each of the vectors F(v) indicates a gas flow rate and a direction toward the center of the purge ring. In this manner, gas is delivered around the wafer in a precise, controlled, and uniform manner. That is, the mass flow rate or radial flow velocity of gas is uniform at all points on the circumference 410 of the outlet network 460, such that the purge ring 200 provides a radially symmetric flow of gas. Specifically, embodiments of the present disclosure deliver gas at uniform pressure and / or velocity azimuthally around the circumference of the purge ring.

[0073] 4C shows a table 435 listing an exemplary number of channels and exemplary channel widths in a purge ring 200 configured to symmetrically distribute gas around the wafer, according to one embodiment of the present disclosure, as well as a reprojection of the passages and channels of the purge ring, where the purge ring is configured for radially symmetric flow. For illustrative purposes, table 435 shows a purge ring having eight channels (e.g., halfway around a line and / or plane of symmetry not shown), although other embodiments support purge rings with a greater or lesser number of channels.

[0074] In particular, table 435 illustrates the various thicknesses of the channels on either side of the line and / or plane of symmetry. For purposes of discussion, channels 1-8 shown in Figures 4A and 4B will be discussed, which represent channels on either side of line and / or plane of symmetry 440. In one embodiment, channels of multiple sizes help reduce variations in the radial flow of purge gas so that the flow of purge gas remains uniform at all angular positions around purge ring 200, such as around circumference 410 associated with outlet network 460.

[0075] Reprojection 445 shows the horizontal layout of channels 1-8, illustrating the varying widths (e.g., radial widths) of the channels. In particular, channels closer to purge inlet 420 (located at 0 degrees) have smaller radial widths than channels further from purge inlet 420, such as channels closer to the opposite point (e.g., 180 degrees) of purge inlet 420, as previously described. Reprojection 445 also shows multiple passages 430 (e.g., passage 430A...430I), with passage 430A centered at approximately 0 degrees and passage 430I centered at approximately 180 degrees.

[0076] In one embodiment, at least some of the centers of each of the passages, including at least passages 430B, 430C, 430D, 430F, 430G, and 430H, are equidistant (e.g., distance "d") from one another, as described above. That is, the centers of the passages, in one embodiment, can be evenly distributed radially across the circumference 410 associated with the outlet network 460 of the purge ring 200. In another embodiment, the passages are asymmetrically distributed. Also, the channels (e.g., channels 1-8) can be symmetrically or asymmetrically distributed across the circumference 410.

[0077] In one embodiment, the channels increase in size (e.g., radial width) as one moves radially around the circumference of the purge ring until they reach a point on the circumference opposite the supply port or purge inlet 420, as described above. For illustrative purposes, channel 1, closest to the purge inlet 420, has a width of 4 units, while channel 8, farthest from the purge inlet 420, has a width of 24 units. Channels located radially between channel 1 and channel 8 have corresponding widths based on their radial distance from the purge inlet 420. That is, channels farther from the purge inlet 420 have wider widths than channels closer to the purge inlet 420, as shown by table 435. In particular, the radial width of a first channel centered at a radial distance from the purge ring is greater than the radial width of a second channel centered at a radial distance closer to the purge ring inlet.

[0078] The increased channel size further away from the inlet port 420 is designed to promote an increase in gas flow (e.g., mass flow distribution) circumferentially within the purge ring 200, more specifically at points further away from the purge inlet 420 within the outlet network 460, to symmetrically distribute gas (e.g., even mass flow distribution) around the wafer, or in other words, to provide an even and uniform gas flow at all points around the circumference 410 associated with the outlet network 460. Traditionally, without the passage and / or channel configuration of the presently disclosed embodiments, the mass flow distribution within the purge ring would be highly asymmetric, with more gas flow closer to the purge inlet and much less gas flow at points opposite the purge inlet. However, the passage and / or channel configuration of the presently disclosed embodiments enables an even mass flow distribution throughout the purge ring 200 and outlet network 460, providing an even and uniform gas flow at all points around the circumference 410 associated with the outlet network 460 of the purge ring 200, for symmetrical gas distribution around the wafer.

[0079] Correspondingly, because the size of the channels increases as they move further radially from the purge inlet 420, the size (e.g., radial width) of the passages may decrease as one moves radially around the circumference of the purge ring until reaching a point on the circumference opposite the supply port 420 (e.g., 180 degrees), as previously described. For example, the passages may gradually decrease in size as one moves radially away from the purge inlet 420 at 0 degrees. For illustrative purposes, passages 430B, 430C, 430D, 430E, 430F, 430G, 430H, and 4301 may sequentially decrease in size (e.g., radial width), such that passage 430B has the largest width and passage 4301 has the smallest width. In one embodiment, due to symmetry constraints about the line and / or plane of symmetry 440, passage 430A centered at 0 degrees may have a smaller radial width than adjacent passage 430B.

[0080] 4D is a graph 465 illustrating the variation of gas velocity (e.g., x-axis) versus angular position (e.g., y-axis) on a purge ring configured to symmetrically distribute gas around a wafer, according to one embodiment of the present disclosure. As shown, graph 465, in particular, illustrates little variation in the outlet flow rate and / or pressure of gas around the inner diameter of the purge ring, or the circumference 410 associated with outlet network 460 of purge ring 200. That is, the velocity of gas flow from outlet network 460 is approximately equal at all points around the circumference. Correspondingly, the pressure of gas delivered from outlet network 460 is approximately equal at all points around the circumference. For example, the velocity and / or pressure of gas at a point close to purge inlet 420, located at 0 degrees, is approximately equal to the velocity and / or pressure of gas at a point farthest from the purge inlet (e.g., 180 degrees).

[0081] 5A is a diagram 500A illustrating a perspective cross-sectional view of a purge ring 200 configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N, etc.) around a wafer, according to one embodiment of the present disclosure. As shown, the purge ring 200 includes an outlet network 460 including multiple outlet openings configured for the exit of gas, and the purge ring is configured for radially symmetric flow of gas such that an even and uniform flow of gas exits the purge ring at all points around the circumference 410 associated with the outlet network 460.

[0082] For example, the purge ring includes an outer channel 450 configured to receive gas from a gas distribution system at a purge inlet 420 (not shown). The outer channel is configured to present a low fluid resistance to the gas such that pressure equilibrium is reached throughout the outer channel 450 during a first stage of gas distribution before the gas is delivered to the distribution volume 480. That is, after reaching equilibrium within the outer channel, the gas leaks into the distribution volume 480, which includes multiple passages and multiple channels, as previously described. For example, the distribution volume 480 Within 0The passages and channels are configured to provide a uniform and symmetric radial gas flow to the reservoir 510, which in embodiments is configured to provide a uniform and symmetric radial gas flow to the reservoir 510 through the channels and passages in the distribution volume 480. The road 480 and connects to outlet network 460. In this manner, pressure balance is also achieved within reservoir 510 when delivering gas to the outlet network, such as before radially flowing gas into outlet network 460. By having uniform gas flow at all points around distribution volume 480 and / or all points around reservoir 510, the gas flow exiting outlet network 460 distributes gas symmetrically around the wafer.

[0083] The outlet network 460 can be configured in any manner to symmetrically distribute gas around the wafer. In one embodiment, the outlet network includes multiple outlet openings therein, each configured to provide a corresponding portion of the outlet flow of gas. In one embodiment, the outlet network comprises an array of outlet openings. The outlet openings may be of any shape and form and may include openings, orifices, outlet ports, etc. In an embodiment, the outlet openings may be distributed symmetrically or asymmetrically around the circumference 410 associated with the outlet network 460. In another embodiment, multiple outlet openings are configured on the bottom surface 515 of the purge ring 200.

[0084] For example, outlet opening 460A is connected to channel 520A, which is connected to reservoir 510. In one embodiment, channel 520A is angled to promote gas outflow from outlet opening 460A in a direction toward inner diameter 475 of purge ring 200. In particular, outlet network 460, in one embodiment, is oriented in a downward direction such that the channels leading to the outlet openings (including channel 520A) extend laterally inward as they extend from reservoir 510 toward inner diameter 475 to connect to corresponding outlet openings. In this manner, gas is directed toward the wafer periphery (e.g., slightly above and overlapping inner diameter 475 of purge ring 200) to distribute gas around a corresponding portion of the wafer periphery, e.g., to dilute process gas around the wafer, as further described in connection with FIG. 8D. In other embodiments, outlet network 460 may be configured such that, in one embodiment, the channels leading to the outlet openings (including channel 520A) extend laterally outward to connect to corresponding outlet openings as they extend from reservoir 510 and away from inner diameter 475. In yet other embodiments, the outlet network 460 is oriented in an upward direction, such that the channels extend upward from the reservoirs toward the top surface 590 to connect to corresponding outlet openings (not shown), and the channels can extend laterally inward toward the inner diameter 475 or outward away from the inner diameter 475. FIGS. 6A-1 through 6A-4 illustrate different orientations of the channels and outlet openings of the outlet network 460 in various exemplary embodiments. While not shown, it is understood that other orientations of the channels and outlet openings are also supported.

[0085] 5B is a diagram 500B illustrating another perspective view including a cross section of the purge ring 200 shown in FIG. 5A, according to one embodiment of the present disclosure. The cross section may show areas where no channels or passages are present, or areas where the passages are configured to completely restrict the flow of purge gas. In particular, reservoir 510 is shown, with angled channel 520 connecting reservoir 510 to at least one outlet port (e.g., outlet opening) of outlet network 460.

[0086] The reservoir 510 may have a ring shape, annular, annular ring shape, etc., and the reservoir 510 has a volume. In one embodiment, the reservoir 510 is continuous, such that the reservoir 510 has an interior volume or channel that continues uninterrupted throughout the purge ring. In another embodiment, the reservoir 510 may be sectioned, with different sections connecting the dispensing volume 480 to corresponding portions of the outlet network 460.

[0087] FIG. 5C is a diagram 500C that provides a perspective view including a cross section of a purge ring 200′ configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. In particular, the purge ring 200′ includes an outer channel 450 connected to a reservoir 510 via channels and passages. In one embodiment, the outer channel 450 is connected to the reservoir 510 via a distribution volume including channels and passages. The reservoir 510 connects the channels and passages to an outlet network including one or more continuous channels 530 configured for the egress of gas. The one or more continuous channels 530 may be configured to follow the circumference of the outlet network, such as, for illustrative purposes, the circumference 410. For example, the outlet network may be one continuous channel around the entire circumference, or may be sectioned into multiple sections of channels configured around the circumference. In one embodiment, at least one of the one or more continuous channels comprises a porous medium. The outlet channels 530 provide a uniform and symmetric radial gas flow from the purge ring 200', so that the gas flow exiting the outlet network distributes the gas symmetrically around the wafer, as previously described.

[0088] FIG. 5D is a diagram 500D illustrating a perspective view including a cross section of a purge ring 200′ configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. In particular, the purge ring 200″ has an outlet network including a series of outlet ports 550 or outlet openings disposed on an inner ledge 540 located near or adjacent to the outer channel 450. The inner ledge may follow the outer channel throughout the purge ring 200′ and / or be located near the outer channel. As shown, the outlet ports 550 are configured for the egress of gas, according to one embodiment of the present disclosure. As shown, the inner ledge 540 includes at least outlet ports 550A, 550B, and 550C. The outlet ports are positioned to direct gas in a direction toward the inner diameter 475′ of the purge ring 200′. In this manner, the gas is directed through the wafer periphery (e.g., the inner diameter 475' of the purge ring 200'') slightly above and overlapping the inner diameter 475' to distribute the purge gas around a corresponding portion of the wafer periphery. ) be guided towards.

[0089] FIG. 6A is a cross-section 600A along line A-A in FIG. 4A of a channel 610 in the purge ring 200, previously introduced in at least FIGS. 4A-4B, configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around the wafer, according to one embodiment of the present disclosure. In one embodiment, the channel 610 is located in the distribution volume 480, which includes channels and passages. The channel 610 shown in FIG. 6A provides gas flow in a radial direction between the outer channel and the outlet network 460, as previously described. In particular, the channel 610 provides low fluid resistance for gas in the radial direction and an unrestricted radial path to the outlet network 460.

[0090] As shown, cross-section 600A of purge ring 200 includes outer channel 450 configured to provide low circumferential fluid resistance for gas received at purge inlet 420. Thus, gas flows circumferentially around outer channel 450 until pressure equilibrium is reached in a first stage. After pressure equilibrium is reached, gas flows radially into the multiple passages and channels and / or leaks. In some embodiments, gas flows radially into a distribution volume including the passages and channels. For example, gas flows radially into channel 610 toward reservoir 510. Furthermore, gas flows from the reservoir through channel 520M-1 of outlet network 460 and exits outlet port 460M (e.g., outlet opening). As mentioned above, in one embodiment, the outlet network 460 is oriented in a downward direction such that the channels (including channel 520M-1) leading to the outlet openings (including outlet opening 460M-1) extend downward and laterally inward as they extend from the reservoir 510 toward the inner diameter 475 to connect to the corresponding outlet openings. It is understood that channel 520M-1 can access the reservoir 510 at any location, and the configuration shown in FIG. 6A-1 is exemplary. The reservoir 510 is configured to reach pressure equilibrium, thereby providing a symmetric radial flow of gas throughout the outlet network 460. That is, the outflow of gas from outlet port 460M-1 is approximately equal to the outflow of gas from another outlet port in the outlet network 460.

[0091] FIG. 6A-2 illustrates a cross-section 600A-2 of channels in a distribution volume of a purge ring configured to symmetrically distribute inert gas around a wafer, according to one embodiment of the present disclosure, in which the outlet channels are configured in a downward and outward orientation. Line A-2 is similar to the positioning of line A-A in FIG. 4A , and cross-section 600A-2 illustrates a different orientation and configuration of outlet network 460. In particular, outlet network 460-2, in one embodiment, is oriented in a downward direction such that channels (including channel 520M-2) leading to outlet openings (including outlet opening 460M-2) extend downward and laterally outward to connect to corresponding outlet openings as they extend away from inner diameter 475 from reservoir 510 toward outer channel 450. It is understood that channel 520M-2 can access reservoir 510 at any location, and the configuration illustrated in FIG. 6A-2 is exemplary.

[0092] FIG. 6A-3 illustrates a cross-section of channels in a distribution volume of a purge ring configured to symmetrically distribute inert gas around a wafer, according to one embodiment of the present disclosure, with the outlet channels configured in an upward and inward orientation. Line A-3 is similar to the positioning of line A--A in FIG. 4A, and cross-section 600A-3 illustrates a different orientation and configuration of outlet network 460. In particular, outlet network 460-3, in one embodiment, is oriented in an upward direction such that channels (including channel 520M-3) leading to outlet openings (including outlet opening 460M-3) extend upward and laterally inward as they extend from reservoir 510 toward inner diameter 475 to connect to corresponding outlet openings. It is understood that channel 520M-3 can access reservoir 510 at any location, and the configuration illustrated in FIG. 6A-3 is exemplary.

[0093] 6A-4 is a cross-section of a channel in a distribution volume of a purge ring configured to symmetrically distribute inert gas around a wafer, with the outlet channels configured in an upward and outward orientation, according to one embodiment of the present disclosure. Line A-4 is similar to the positioning of line A--A in FIG. 4A, and cross-section 600A- 44 illustrates different orientations and configurations of the exit network 460. In particular, the exit network 460- 4 are oriented in an upward direction, in one embodiment, such that the channels (including channel 520M-4) leading to the outlet openings (including outlet opening 460M-4) extend upward and laterally outward to connect to the corresponding outlet openings as they extend away from inner diameter 475 from reservoir 510 towards outer channel 450. It will be understood that channel 520M-4 can access reservoir 510 at any location, and the configuration shown in FIG. 6A-4 is exemplary.

[0094] 6B is a perspective cutaway view 600B including a cross section of purge ring 200, previously introduced in at least FIGS. 4A-4B, configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N, etc.) around a wafer, according to one embodiment of the present disclosure. Cutaway view 600B shows the bottom of purge ring 200. In particular, outer channel 450, as previously described, is configured to provide low circumferential flow resistance for gas received at purge inlet 420.

[0095] After pressure equilibrium is reached in the outer channel 450, gas flows radially into the plurality of passages 430 and the plurality of channels and / or leaks. In one embodiment, gas flows radially into the distribution volume 480, which includes the passages and channels. For example, passages 430X and 430Y are located adjacent to channel 610 on either side of channel 610. Each of passages 430X and 430Y restricts the radial flow of gas through the distribution volume such that gas is at least partially redirected toward channel 610 by these passages 430X and 430Y. As described above, the channels are configured to allow gas to flow radially from the outer channel to the outlet network. In one embodiment, the channels provide unrestricted radial flow of gas through the distribution volume 480 toward the outlet network 460, as previously introduced. That is, the passages provide a higher radial fluid resistance compared to the radial fluid resistance present in the channels. Thus, the configuration of passages and channels is configured to provide an even and uniform radial gas flow throughout the purge ring 200 to the reservoir 510 .

[0096] As previously mentioned, reservoir 510 is configured to reach pressure equilibrium, thereby providing a symmetric radial flow of gas throughout outlet network 460. For example, outlet network 460 may include multiple outlet openings or ports distributed throughout the circumference 410 of purge ring 200. Thus, the outflow of gas from any outlet opening or port in outlet network 460 is approximately equal to the outflow of gas from another outlet opening or port in the outlet network.

[0097] FIG. 6C is a cross-section 600C along line B-B of an exemplary passage in a purge ring configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure. In one implementation, the passage is located in distribution volume 480, which includes passages and channels, as described above. As shown, cross-section 600C of purge ring 200 includes outer channel 450 configured to provide low circumferential flow resistance for gas received at purge inlet 420. Thus, gas flows around the outlet channel in a first stage until pressure equilibrium is reached. After pressure equilibrium is reached, gas flows radially into the multiple passages and multiple channels and / or leaks out. In one implementation, gas flows radially into distribution volume 480, which includes passages and channels.

[0098] At cross-section 600C, gas flows into passage 430C, generally in a direction toward reservoir 510, with passage 430C configured to reduce radial gas flow. Passage 430C is located between channel 2 and channel 3. As previously introduced, passage 430C is configured to restrict, bypass, redirect, etc., gas flow through distribution volume 480 as the gas flows toward outlet network 460. In particular, passage 430C provides a higher radial fluid resistance for gas compared to the fluid resistance present within the channel, thereby providing a restricted radial path through passage 430C to outlet network 460. Gas then flows from the reservoir through channel 520P of outlet network 460 and exits outlet port 460P. Reservoir 510 is configured to reach pressure equilibrium, thereby providing a symmetric radial flow of gas throughout outlet network 460. That is, the outflow of gas from the outlet opening or port 460P is approximately equal to the outflow of gas from another outlet opening or port in the outlet network 460.

[0099] The passages 430C can be configured for varying degrees of fluid resistance. The passages can be solid or porous media having a surface 482, which may be flat (see, e.g., passage 430Y in FIG. 6B). For example, the distance “d” between the surface 482 and the upper surface 481 can be selectable to provide different values ​​of fluid resistance. The space between the surface 482 and the upper surface 481 provides for fluid flow. Generally, for illustrative purposes, at least in the radial direction, the greater the distance “d” in the space, the lower the fluid resistance (i.e., the lower the height of the passage), and the smaller the distance “d” is, the higher the fluid resistance (e.g., the higher the height of the passage). Furthermore, varying the porosity, size, and / or shape of the passages also affect the fluid resistance. For example, instead of having a flat surface for the passages, the surface 482 of the passages 430C can be ribbed across the entire surface to increase the surface area, thereby increasing the fluid resistance within the corresponding passage, at least in the radial direction. In embodiments of the present disclosure, one or more passages in the plurality of passages 430 may be configured differently to provide varying degrees of fluid resistance.

[0100] 7 illustrates a gas distribution system 700 configured to distribute gas with equal gas flow to each of the pedestal assemblies of multiple stations in a multi-station process chamber, according to one embodiment of the present disclosure. The gas distribution system 700 provides balanced gas delivery among the stations such that a uniform gas flow is supplied to each of the stations (e.g., STN1, STN2, STN3, and STN4) at each of the supply branches. The gas distribution system 700 is configured to operate in extreme conditions, such as high temperatures and pressures, present in the processing chamber.

[0101] In one embodiment, each pedestal assembly of a corresponding station includes a purge ring configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around the wafer in accordance with one embodiment of the present disclosure. As previously described, the purge ring provides a symmetric and balanced radial flow at one supply port (e.g., purge inlet 420). In particular, the purge ring is configured to provide a variable flow rate of fluid, e.g., to provide a radially symmetric flow at all points in the outlet network (e.g., multiple outlet ports). Thus, in one embodiment, the radial flow velocity of the gas flow at all points in the outlet network is uniform. Furthermore, in another embodiment, the pressure of the gas flow at all points in the outlet network is uniform.

[0102] In particular, gas distribution system 700 includes equipment 760 that provides a gas source. An ultra-high purity (UHP) and high precision pressure regulator 750 is provided to regulate pressure, such as providing low pressure. A precision mass flow controller (MFC) 740 is configured to control the gas at low flow rates and low pressures. In particular, MFC 740 is not pressure sensitive and provides a precise low flow MFC for the gas. Also provided is a UHP 2-port / 2-position valve 730. Equipment 760, UHP pressure regulator 750, MFC 740, and UHP 2-port / 2-position valve 730 are provided within or connected to a gas delivery structure or conduit 710, such as a flexible gas line or conduit.

[0103] In particular, a gas delivery structure or conduit 710 is routed through the process chamber's interior station partitions 211, and the gas delivery structure 710 delivers gas to each of the stations through a corresponding access port (e.g., port 920). For example, each access port corresponds to a supply branch leading to a corresponding station. As shown, the gas delivery structure 710 includes four supply branches 720-1, 720-2, 720-3, and 720-4. Each of the supply branches is connected to a corresponding access port and configured to deliver gas to the purge ring of the pedestal assembly in the corresponding station. For example, supply branch 720-1 delivers gas to station 1, supply branch 720-2 delivers gas to station 2, supply branch 720-3 delivers gas to station 3, and supply branch 720-4 delivers gas to station 4. Highlighted area Z is enlarged to show the components of feed branch 720-1 in FIG. 8A.

[0104] FIG. 8A illustrates a partial cross-section of a pedestal assembly 800A including a purge ring 200 configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around the wafer, as described above, and a supply branch 720-1 within highlighted area Z for delivering gas to the purge ring 200, according to one embodiment of the present disclosure. The components in FIG. 8A are schematic to illustrate the delivery of gas to each station. In particular, the pedestal assembly 800A includes a spindle 160. Station connections 221 are configured to seat the spindle in the corresponding station. A rotation mechanism (not shown) may be connected to the spindle 160 for rotating the pedestal 140. The spindle 160 is connected to the pedestal 140, which is configured to support a substrate, as described above. The purge ring 200 is located proximate the outer periphery of the pedestal 140, and the interaction between the purge ring 200 and the pedestal 140 is described in more detail below in connection with FIG. 8D.

[0105] Highlighted area Z is also shown in FIG. 8A and provides a close-up view of supply branch 720-1, which delivers gas from gas delivery structure 710 to purge ring 200, as previously introduced. In particular, gas delivery structure 710 includes access port 920, which in one embodiment may be a three-way connector, with one connection leading to branch 720-1. Gas delivery structure 710 supplies a high-precision gas flow rate (e.g., controlled gas at low flow rates and pressures) to access port 920 (e.g., a distribution manifold, a three-way connector, etc.), as previously described. Gas delivery structure 710 may include flexible tubing (e.g., metal, etc.) and connections.

[0106] Supply branch 720-1 may include at least one fluidic resistor 830 configured to regulate gas flow to a corresponding station. Providing multiple fluidic resistors provides more precise control. In this manner, gas flow to each of multiple stations can be regulated to provide a near-uniform or approximately equal gas flow to each station, with gas regulation occurring through the fluidic resistors of the corresponding branch. For example, first flow resistor 830a and second flow resistor 830b may be provided in gas supply line 820 (e.g., conduit) of supply branch 720-1. A bonding interface 840 couples metal gas supply line 820 to a ceramic conduit or tube connected to ceramic purge ring 200, as further described in connection with FIG. 8B.

[0107] FIG. 8B is a close-up view of a cross section of bonding interface 840 configured to provide a ceramic-to-metal transition. In particular, bonding interface 840 interfaces a metal gas conduit with a ceramic purge ring configured to symmetrically distribute inert gas around the wafer and a conduit for delivering gas to the purge ring, according to one embodiment of the present disclosure. As shown, ceramic supply conduit 829 is connected at one end to purge ring 200 and at the other end to coupler 842 via a conical seal. In particular, nut 841 a and wave washer 843 a (which may be bellows-compliant, for example) are used to secure supply conduit 829 to coupler 842. Metal gas supply conduit 820 is connected at one end to an access port for delivering gas (e.g., via the aforementioned supply branch). Gas supply conduit 820 is connected at the other end to coupler 842 via a conical seal. In particular, a nut 841 b (eg, a nickel alloy) and a wave washer 843 b (which may be bellows compliant, for example) are used to secure the gas supply line or conduit 820 to the coupler 842 .

[0108] As shown, distance "p" may be variable between supply conduit 820 and supply conduit 829 to provide additional flow control. For example, the greater the distance "p," the greater the fluid resistance affecting the flow of gas to purge ring 200.

[0109] 8C is a cross-sectional view of a flow resistor 830′ configured in a conduit for delivering gas to a purge ring 200 configured to symmetrically distribute gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) around a wafer, according to one embodiment of the present disclosure, where the flow resistor 830′ can be included in the conduit for delivering gas to the purge ring. As shown, the flow resistor 830′ can be in the form of a bellows configured to provide a fluid resistance.

[0110] 8D is a cross-section of an exemplary pedestal assembly 800D showing the periphery of a pedestal 140 associated with a purge ring 200, according to one embodiment of the present disclosure. The purge ring 200 receives gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) through a supply tube 829, which is connected to a gas distribution system 700 including a gas delivery structure 710, which together are configured to deliver the gas to a corresponding station, including the purge ring 200. As previously described, the purge ring 200 includes an outer channel 450 configured to provide low circumferential flow resistance for gas received at a purge inlet (e.g., inlet 420) (not shown). Thus, the gas flows circumferentially around the outlet channel until pressure equilibrium is reached in a first stage. After pressure equilibrium is reached, the gas flows radially and / or leaks into the multiple passages and channels, as previously described. In one embodiment, the gas flows radially into a distribution volume 480, which includes the passages and channels, as previously described. For example, gas flows radially through the passages and channels toward reservoir 510. Further, gas flows from reservoir 510 through channels 520 to outlet openings or ports in the outlet network. Reservoir 510 is configured to reach pressure equilibrium, thereby providing a symmetric radial flow of gas throughout the outlet network. That is, the outflow of gas from the outlet network is approximately equal at all points around the circumference associated with the outlet network to provide a radially symmetric and uniform flow of gas around the wafer.

[0111] In one embodiment, the purge ring 200 is stationary to prevent movement during wafer loading and / or unloading. For example, during wafer transfer, the lift pins 890 move upward through the travel space 895 to raise the wafer 101 from the MCA 850 above the pedestal upper surface 870 a sufficient distance to allow a robot arm (e.g., an end effector) to engage the wafer for loading and / or unloading the wafer between process chambers. In another embodiment, the purge ring is also stationary to prevent movement during wafer rotation from station to station. For example, during wafer rotation, the lift pins 890 move upward through the travel space 895 to raise the wafer 101 from the MCA 850 above the pedestal upper surface 870 a sufficient distance to allow a paddle 225 of the rotation mechanism 220 to engage the wafer 101 for indexing the wafer to the appropriate station, thereby rotating the wafer from one station to another within a multi-station process chamber.

[0112] The pedestal 140 includes a top surface 870 configured to support the wafer 101. Wafer supports or minimum contact areas (MCAs) 850 can be used to improve fit between surfaces (e.g., the top surface 870 and bottom surface of the wafer 101) when high precision or tolerance is required and / or minimal physical contact is desired to reduce defect risk. The pedestal 140 may include a step (e.g., a descending step) around the periphery of the pedestal 140, where the top surface 875 of the step can be lower than the top surface 870 of the pedestal used to support the wafer. The additional purge ring support 855 allows a controlled distance to be maintained between the purge ring 200 and the top surface 875 of the step when the purge ring resides on the purge ring support 855. Instead of the purge ring support 855, the purge ring 200 may be supported using an MCA positioned on the top surface 875 of the step of the pedestal 140.

[0113] When the wafer 100 is supported by the MCA 850 and the purge ring 200 is supported by the purge ring support 855, in some embodiments, the edge region of the wafer 100 is positioned above the inner portion 209 of the purge ring 200. That is, the wafer 100 extends beyond and overlaps the inner diameter 475 of the purge ring 200. In one embodiment, the upper surface 879 of the purge ring 200, which rests on the stepped purge ring support 855, can be lower than the upper surface 870 of the pedestal used to support the wafer. The support of the purge ring at a distance from the upper surface 875 of the step, as well as the support of the wafer at a distance from the upper surface 870 of the pedestal 140, are adjusted to create a vertical separation (e.g., 0.5-10 mm) between the edge region of the wafer and the inner portion 209 of the purge ring 200 (e.g., the upper surface 879 near the inner diameter 475). In this manner, the fluid passes through the purge ring 200 (e.g., via the outer channel 450, through the dispense volume 480 to the reservoir 510, and out through the outlet network), and the fluid passes through the purge ring 200, the pedestal 140, and the wafer. 101 A flow 860 of purge gas is permitted through the space formed between the inner portion 209 of the purge ring 200 and the wafer 101. In particular, the purge gas follows the flow 860 around the inner portion 209 of the purge ring 200 and under the edge of the wafer 101, collecting in a volume near the wafer edge to dilute the process gas at the wafer edge, as previously described. Specifically, the purge gas provides localized dilution of the plasma sheath around the wafer edge to reduce charge buildup at the wafer edge, thereby reducing the probability of discharge or arcing from the wafer to the ceramic pedestal during processing (e.g., PECVD, ALD, etc.). In another embodiment, the purge gas present around the edge of the wafer 101 creates a positive counterflow to limit deposition on the backside of the wafer, particularly near the wafer edge (e.g., by minimizing plasma formation under the edge of the wafer and in the gap above the purge ring's upper surface 879).

[0114] 9A illustrates a top view of a multi-station processing tool 250 having four processing stations and a gas distribution system for distributing gas (e.g., purge gas, inert gas, nitrogen, N2, etc.) to the pedestal assembly of each of the stations with uniform gas flow, according to one embodiment of the present disclosure. The multi-station processing tool 250 was previously introduced in FIG. 2A, and the discussion of relevant components (e.g., similarly numbered components) in connection with FIG. 2A is relevant to FIG. 9A and will not be repeated for clarity and brevity.

[0115] 9A, gas delivery structures 710 (e.g., flexible conduits) are routed through interior station partitions 211 of process chamber 250, such as corresponding openings 210. In this manner, a gas delivery structure or conduit 710 is present at each station and is accessible for delivering gas to each of the stations. In particular, gas delivery structure 710 delivers gas to each of the stations via a corresponding access port (e.g., port 920) and corresponding supply branches (e.g., 720-1, 720-2, 720-3, and 720-4). Each of the supply branches is configured to deliver gas to a corresponding purge ring of a corresponding pedestal assembly in the corresponding station, with each purge ring receiving gas at a corresponding purge inlet 420.

[0116] FIG. 9B shows a top view of chamber inserts 910a and 910b of a multi-station processing tool (e.g., tool 250) having four processing stations, according to one embodiment of the present disclosure. As shown, the gas delivery structure or conduit 710 of FIG. 9A is routed through openings 210 in station partitions 211 of the multi-station processing tool or chamber. In particular, each station partition 211 may include a pair of inserts 910a and 910b. Furthermore, each pair of inserts 910a and 910b is located adjacent to a corresponding outer wall of the chamber. Also, each pair of inserts 910a and 910b includes openings 210 that can be used to route the gas delivery structure 710 between stations. In this manner, a gas delivery structure 710 is present in each of the stations for purposes of gas delivery.

[0117] 9C illustrates a bottom view of the chamber inserts 910a and 910b shown in FIG. 9B for a multi-station processing tool (e.g., tool 250) having four processing stations, according to one embodiment of the present disclosure. The bottom view of the chamber inserts in FIG. 9C exposes the openings 210 in the station partitions 211. As previously discussed, gas distribution structures or conduits 710 are routed through the openings 210 in the station partitions 211 of the multi-station chamber 250 (e.g., via the openings 210 in the chamber inserts 910a and 910b).

[0118] In particular, the gas distribution structure or conduit 710 is configured to uniformly distribute gas with an even gas flow to each pedestal assembly of the multiple stations. As shown, the portion of the gas distribution structure 710 contained within a station may include one or more compression fittings 925 joining two dissimilar metal pieces of the conduit and access ports 920 configured to supply gas to the corresponding station. For example, FIG. 9C shows the gas distribution structure 710 routed through station 1, with the access port 920 connected to the gas distribution structure 710 and to the purge inlet 420 of the purge ring 200, such as through branch 720-1. The purge ring 200, as described above, is configured to provide a radially symmetric and uniform gas flow from the outlet network (e.g., outlet ports), thereby evenly distributing the purge gas at the wafer edge during processing.

[0119] FIG. 10 illustrates a control module 1000 for controlling the above-described system. For example, the control module 1000 may include a processor, a memory, and one or more interfaces. The control module 1000 may be used to control devices within the system based in part on sensed values. By way of example only, the control module 1000 may control one or more of a valve 1002, a filter heater 1004, a pump 1006, a gas distribution system 700, and other devices 1008 based on the sensed values ​​and other control parameters. The control module 1000 may receive sensed values ​​from a pressure gauge 1010, a flow meter 1012, a temperature sensor 1014, and / or other sensors 1016, by way of example only. The control module 1000 may also be used to control process conditions during precursor delivery and film deposition. The control module 1000 typically includes one or more memory devices and one or more processors.

[0120] The control module 1000 can control the activity of the precursor delivery system and deposition apparatus. The control module 1000 executes a computer program containing a set of instructions for controlling process timing, delivery system temperature and pressure differential across filters, valve position, gas mixture, chamber pressure, chamber temperature, substrate temperature, RF power levels, substrate chuck or pedestal position, purge gas delivery, and other parameters of a particular process. The control module 1000 can also monitor pressure differentials and automatically switch vapor precursor delivery from one or more paths to one or more other paths. In some embodiments, other computer programs stored in a memory device associated with the control module 1000 can be used.

[0121] Typically, there is a user interface associated with the control module 1000. The user interface may include a display 1018 (e.g., a display screen and / or graphical software display of equipment and / or process conditions) and a user input device 1020 such as a pointing device, keyboard, touch screen, microphone, etc.

[0122] Computer programs for controlling precursor delivery, deposition, and other processes in a process sequence can be written in any conventional computer-readable programming language (e.g., assembly language, C, C++, Pascal, Fortran, etc.) Compiled object code or scripts are executed by a processor to perform the tasks identified in the program.

[0123] The control module parameters relate to process conditions such as, for example, filter pressure differential, process gas composition and flow rate, purge gas flow rate, temperature, pressure, plasma conditions such as RF power level and low frequency RF frequency, cooling gas pressure, and chamber wall temperature.

[0124] The system software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of the chamber components necessary to carry out the processes of the present invention, including the delivery of purge gas. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, purge gas control code, pressure control code, heater control code, and plasma control code.

[0125] The substrate positioning program can include program code for controlling chamber components used to load the substrate onto the pedestal or chuck and control spacing between the substrate and other parts of the chamber, such as the gas inlet and / or target. The process gas control program can include code for controlling gas composition and flow rates to stabilize the pressure in the chamber, and optionally, code for flowing gas into the chamber before deposition. The purge gas control program can include code for controlling the delivery of purge gas. The filter monitoring program can include code for comparing a measured difference with a predetermined value and / or code for switching paths. The pressure control program can include code for controlling the chamber pressure, for example, by adjusting a throttle valve in the chamber's exhaust system. The heater control program can include code for controlling current to a heating unit for heating components of the precursor delivery system, the substrate, and / or other parts of the system. Alternatively, the heater control program can control the delivery of a heat transfer gas (such as helium) to the substrate chuck.

[0126] Examples of sensors that may be monitored during deposition include, but are not limited to, mass flow control modules, pressure sensors such as pressure manometers 1010, thermocouples located in the delivery system, pedestal, or chuck, and condition sensors 1020. Appropriately programmed feedback and control algorithms can be used in conjunction with data from these sensors to maintain desired process conditions. The foregoing describes the implementation of embodiments of the present disclosure in single or multi-chamber semiconductor processing tools.

[0127] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (e.g., substrate pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling system operation before, during, and after semiconductor wafer or substrate processing. Such electronics may be referred to as a "controller" and may control various components or subcomponents of one or more systems. The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or type of system. Such processes may include process gas delivery, purge gas delivery, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, substrate transfer to and from tools and other transfer tools connected or interfaced with a particular system, and / or substrate transfer to and from load locks.

[0128] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers, that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor substrate or system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0129] The controller, in some embodiments, may be part of, coupled to, or a combination of a computer integrated with or otherwise networked to the system. For example, the controller may be in the “cloud” or all or part of a fab host computer system. This allows for remote access of wafer processing. The computer may provide remote access to the system to monitor the current progress of a fabrication operation, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of a current process, set up processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the Internet.

[0130] The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by having one or more individual controllers networked together and cooperating toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would include one or more integrated circuits on the chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer) and coupled to control the process in the chamber.

[0131] Exemplary systems may include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, a plasma-enhanced chemical vapor deposition (PECVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0132] As noted above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from tool locations and / or load ports in a semiconductor fabrication factory.

[0133] The foregoing description of the embodiments has been provided for purposes of illustration and description. It is not intended to be exhaustive or to limit the present disclosure. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment and, where applicable, may be interchangeable and used in selected embodiments even if not specifically shown or described. It may also be modified in many ways. Such variations should not be considered a departure from the present disclosure, and all such modifications are intended to be included within the scope of the present disclosure.

[0134] Although the foregoing embodiments have been described in some detail for clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. Accordingly, the present embodiments should be considered as illustrative and not restrictive, and the embodiments should not be limited to the details set forth herein but may be modified within the scope of the claims and their equivalents.

Claims

1. A purge ring, a supply port configured to receive a gas; an outer channel connected to the supply port; an outlet network configured for an outlet flow of the gas adjacent an inner diameter of the purge ring; a plurality of channels configured to flow the gas radially from the outer channel to the outlet network; a plurality of passages configured to reduce the flow of the gas in the radial direction between the outer channel and the outlet network; Equipped with the plurality of channels and the plurality of passages are configured to provide a uniform pressure of the outlet flow of the gas around the entire circumference of the outlet network. Purge ring.

2. 2. The purge ring of claim 1, the outer channel is configured to achieve pressure equilibrium before radial flow of the gas into the outlet network occurs; Purge ring.

3. 2. The purge ring of claim 1, a distribution volume connecting the outer channel and the outlet network, the distribution volume including the plurality of channels and the plurality of passages; Further equipped with a purge ring.

4. 4. The purge ring of claim 3, a reservoir connecting the dispensing volume to the outlet network and configured to achieve pressure equilibrium before radial flow of the gas into the outlet network occurs; Further equipped with a purge ring.

5. 2. The purge ring of claim 1, a first circumferential width of the first channel centered at a first circumferential distance from the supply port that is greater than a second circumferential width of the second channel centered at a second circumferential distance closer to the supply port; Purge ring.

6. 2. The purge ring of claim 1, a first circumferential width of the first passages centered at a first circumferential distance from the supply port that is smaller than a second circumferential width of the second passages centered at a second circumferential distance closer to the supply port; Purge ring.

7. 2. The purge ring of claim 1, A purge ring, wherein a passageway of the plurality of passageways comprises a porous media.

8. 2. The purge ring of claim 1, The outlet network includes an array of outlet openings, each outlet opening configured to provide a corresponding portion of the outlet flow of the gas.

9. 9. The purge ring of claim 8, A purge ring, wherein the outlet openings in the array of outlet openings are symmetrically distributed around the circumference of the outlet network.

10. 9. The purge ring of claim 8, The array of outlet openings is configured on a bottom surface of the purge ring.

11. 2. The purge ring of claim 1, The outlet network includes one or more continuous channels configured around the circumference of the purge ring.

12. 12. The purge ring of claim 11, A purge ring, wherein at least one continuous channel comprises a porous medium.

13. 1. A process chamber pedestal assembly comprising: a base for supporting the substrate; A purge ring configured to be mounted on a periphery of a pedestal, the purge ring comprising: a supply port configured to receive a gas; an outer channel connected to the supply port; an outlet network configured for an outlet flow of the gas adjacent an inner diameter of the purge ring; a plurality of channels configured to flow the gas radially from the outer channel to the outlet network; a plurality of passages configured to reduce the flow of the gas in the radial direction between the outer channel and the outlet network; Including, The plurality of channels and the plurality of passages are configured to provide a uniform pressure in the outlet flow of the gas around the entire circumference of the outlet network. Purge ring and A base assembly comprising:

14. 14. The base assembly of claim 13, The purge ring is configured to be positioned below the substrate.

15. 14. The base assembly of claim 13, In the purge ring, the outer channel is configured to achieve pressure equilibrium before radial flow of the gas into the outlet network occurs. Pedestal assembly.

16. 14. The base assembly of claim 13, the purge ring comprises a distribution volume connecting the outer channel and the outlet network, the distribution volume including the plurality of channels and the plurality of passages; Pedestal assembly.

17. 17. The base assembly of claim 16, the purge ring further comprises a reservoir connecting the dispensing volume to the outlet network and configured to achieve pressure equilibrium before radial flow of the gas into the outlet network occurs. Pedestal assembly.

18. 14. The base assembly of claim 13, In the purge ring, a first circumferential width of a first channel centered at a first circumferential distance from the supply port is greater than a second circumferential width of a second channel centered at a second circumferential distance closer to the supply port; Pedestal assembly.

19. 14. The base assembly of claim 13, In the purge ring, a first circumferential width of a first passage centered at a first circumferential distance from the supply port is smaller than a second circumferential width of a second passage centered at a second circumferential distance closer to the supply port. Pedestal assembly.

20. 14. The base assembly of claim 13, In the purge ring, some of the passages comprise porous media. Pedestal assembly.

21. 14. The base assembly of claim 13, In the purge ring, the outlet network includes an array of outlet openings, each outlet opening configured to provide a corresponding portion of the outlet flow of the gas.

22. 22. The base assembly of claim 21, In the purge ring, the outlet openings in the array of outlet openings are symmetrically distributed around the circumference of the outlet network.

23. 22. The base assembly of claim 21, The purge ring, wherein the array of outlet openings is configured on a bottom surface of the purge ring.

24. 14. The base assembly of claim 13, In the purge ring, the outlet network includes one or more continuous channels configured around the circumference.

25. 17. The base assembly of claim 16, A pedestal assembly, wherein at least one continuous channel comprises a porous medium.

26. 1. A process chamber comprising: a plurality of stations, each station including a base assembly, each base assembly including: a base for supporting the substrate; a purge ring configured to be mounted on a periphery of the pedestal, the purge ring comprising: a supply port configured to receive a gas; an outer channel connected to the supply port; an outlet network configured for an outlet flow of the gas adjacent an inner diameter of the purge ring; a plurality of channels configured to flow the gas radially from the outer channel to the outlet network; a plurality of passages configured to reduce the flow of the gas in the radial direction between the outer channel and the outlet network; Including, The plurality of channels and the plurality of passages are configured to provide a uniform pressure in the outlet flow of the gas around the entire circumference of the outlet network. Purge ring and a gas distribution system for distributing the gas with a uniform gas flow to each pedestal assembly of the plurality of stations; Multiple stations including a process chamber comprising:

27. 27. The process chamber of claim 26, a gas delivery structure routed through a station partition of the process chamber, the gas delivery structure delivering the gas to each of the plurality of stations through a corresponding access port in the gas delivery structure for connecting the gas delivery structure to a corresponding pedestal assembly of a corresponding station via a corresponding conduit; at least one flow resistor in the corresponding conduit for adjusting the gas flow to the corresponding station so that the gas flow to each of the plurality of stations is approximately equal; The process chamber further comprises:

28. 28. The process chamber of claim 27, The process chamber, wherein the at least one flow resistor includes a first flow resistor and a second flow resistor configured within the corresponding conduit.

29. 27. The process chamber of claim 26, The process chamber, wherein the purge ring is configured to be positioned below the substrate.

30. 27. The process chamber of claim 26, In the purge ring, the outer channel is configured to achieve pressure equilibrium before radial flow of the gas into the outlet network occurs. Process chamber.

31. 27. The process chamber of claim 26, the purge ring comprises a distribution volume connecting the outer channel and the outlet network, the distribution volume including the plurality of channels and the plurality of passages; Process chamber.

32. 32. The process chamber of claim 31, the purge ring further comprises a reservoir connecting the dispensing volume to the outlet network and configured to achieve pressure equilibrium before radial flow of the gas into the outlet network occurs. Process chamber.

33. 27. The process chamber of claim 26, In the purge ring, a first circumferential width of a first channel centered at a first circumferential distance from the supply port is greater than a second circumferential width of a second channel centered at a second circumferential distance closer to the supply port; Process chamber.

34. 27. The process chamber of claim 26, In the purge ring, a first circumferential width of a first passage centered at a first circumferential distance from the supply port is smaller than a second circumferential width of a second passage centered at a second circumferential distance closer to the supply port. Process chamber.

35. 27. The process chamber of claim 26, In the purge ring, some of the passages comprise porous media. Process chamber.

36. 27. The process chamber of claim 26, In the purge ring, the outlet network includes an array of outlet openings, each outlet opening configured to provide a corresponding portion of the outlet flow of the gas.

37. 37. The process chamber of claim 36, In the purge ring, the outlet openings in the array of outlet openings are symmetrically distributed around the circumference of the outlet network.

38. 37. The process chamber of claim 36, The process chamber, wherein the purge ring has an array of outlet openings configured on a bottom surface of the purge ring.

39. 27. The process chamber of claim 26, In the purge ring, the outlet network includes one or more continuous channels configured around the circumference of the process chamber.

40. 40. The process chamber of claim 39, A process chamber, wherein at least one continuous channel comprises a porous medium.

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