Semiconductor Process Equipment

Abstract

The semiconductor process apparatus includes a process pipe, a plurality of intake pipes and a plurality of groups of electrode assemblies, in which a process chamber and a plurality of buffer chambers are formed, the plurality of intake pipes extend into the plurality of buffer chambers correspondingly, an exhaust port communicating with the process chamber is provided on a side wall of the process pipe, each buffer chamber is provided corresponding to at least one group of electrode assemblies, the electrode assembly extends into the buffer chamber and is connected to an RF power source, the electrode assembly includes a deformable electrode core, a plurality of electrode tubes and an electrode mesh, the plurality of electrode tubes are arranged in sequence along the extension direction of the electrode core, with a predetermined gap between two adjacent electrode tubes, the electrode core is inserted into the plurality of electrode tubes and connected to the plurality of electrode tubes respectively, and the electrode mesh is arranged along the extension direction of the electrode core and fitted around the outside of the plurality of electrode tubes.

Description

[Technical Field]

[0001] This application is in the field of semiconductor technology, and more particularly, relates to semiconductor processing equipment. [Background technology]

[0002] Atomic layer deposition systems use RF to add precursors to the vacuum chamber during the process cycle, allowing for precise control of film thickness, and can deposit multiple types of thin films, including SiO2, SiNx, TiN, and AlN. In vertical atomic layer deposition systems, the key technology is to use a high-frequency electric field to convert the process gas into plasma, and therefore the plasma generator is one of the key components in ensuring the process is successful.

[0003] However, the electrodes used in current plasma generators have a multi-layered nickel mesh structure woven on the outside, and the process of weaving the nickel mesh is expensive and requires a large amount of nickel material, which makes the electrodes expensive and difficult to manufacture. At the same time, the electrode material is soft, so the length of the electrode is easily affected by gravity during use, which affects the service life of the electrode. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments of the present application is to provide a semiconductor process device that can solve the above problems. [Means for solving the problem]

[0005] In order to solve the above technical problems, the present invention is realized as follows.

[0006] An embodiment of the present application provides a semiconductor processing apparatus, the semiconductor processing apparatus including a process pipe and an electrode group, a process chamber and a buffer chamber formed inside the process pipe, the buffer chamber communicating with the process chamber, the buffer chamber corresponding to at least one of the electrode groups, one end of the electrode group of each group extending through the process chamber into the buffer chamber, and the other end of the electrode group of each group being adapted to be connected to an RF power source, each of the electrode groups of each group including two electrode assemblies, each of which is adapted to be connected to a positive electrode and a negative electrode of the RF power source, each of which includes a deformable electrode core, a plurality of electrode tubes, and an electrode mesh, the plurality of electrode tubes being arranged in sequence along the extension direction of the electrode core, with a predetermined gap between two adjacent electrode tubes, the electrode core being inserted into the plurality of electrode tubes and connected to each of the plurality of electrode tubes, the electrode mesh being arranged along the extension direction of the electrode core and fitted around the plurality of electrode tubes. [Effects of the Invention]

[0007] Compared to some current plasma generators that have multiple layers of nickel mesh woven around the outside of the electrode, the semiconductor process apparatus in the embodiments of the present application uses a novel electrode assembly, which can support and protect a deformable electrode core using multiple electrode tubes, thereby improving the overall strength of the electrode assembly, making the electrode assembly less susceptible to changes in length due to gravity, and extending the service life of the electrode assembly. At the same time, the electrode assembly in the embodiments of the present application does not have multiple layers of nickel mesh installed around the outside of the electrode core, but instead has multiple electrode tubes fitted around the outside of the electrode core in the direction of extension of the electrode core, and an electrode mesh fitted around the multiple electrode tubes. This method reduces the amount of nickel mesh used and eliminates the need for multiple layers of nickel mesh, thereby reducing the manufacturing cost and difficulty of the electrode assembly and ensuring the service life of the semiconductor process apparatus. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a first structural schematic diagram of a semiconductor processing device disclosed in an embodiment of the present application; [Figure 2] FIG. 2 is a second structural schematic diagram of a semiconductor processing device disclosed in an embodiment of the present application. [Figure 3] 1 is a structural schematic diagram of a process pipe, a protective pipe, and an intake pipe disclosed in an embodiment of the present application. [Figure 4] 1 is a partial schematic view of a process pipe, a protective pipe, an intake pipe, an electrode assembly, a first connection assembly, and a second connection assembly disclosed in an embodiment of the present application. [Figure 5] 1 is a partial schematic view of an electrode assembly, a first connection assembly, and a second connection assembly disclosed in an embodiment of the present application. [Figure 6] 1 is a first schematic diagram of an electrode assembly disclosed in an embodiment of the present application. [Figure 7] FIG. 2 is a second schematic diagram of an electrode assembly disclosed in an embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, the technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without any creative efforts fall within the scope of protection of the present application.

[0010] The terms "first," "second," etc., used in the specification and claims of this application do not describe a particular order or priority, but rather are used to distinguish between similar objects. It should be understood that data used in this manner is interchangeable where appropriate, such that embodiments of this application may be practiced in orders other than those illustrated or described herein. Objects distinguished by "first," "second," etc., are generally of the same type and are not intended to limit the number of objects; for example, the first object may be one or more. Furthermore, the term "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally represents an "or" relationship between the related objects before and after.

[0011] Hereinafter, the embodiments of the present application will be described in detail with reference to the drawings based on specific examples and application scenarios.

[0012] 1 to 7 , the present disclosure discloses a semiconductor processing apparatus, which may be a vertical atomic layer deposition apparatus. It should be understood that the present disclosure also encompasses other types of apparatus, and the present disclosure is not limited thereto. The disclosed semiconductor processing apparatus includes a process pipe 200 and electrodes. The process pipe 200 defines a process chamber 210 and a buffer chamber 220. The buffer chamber 220 communicates with the process chamber 210. The buffer chamber 220 corresponds to at least one group of electrodes. One end of each group of electrodes extends through the sidewall of the process chamber 210 into the corresponding buffer chamber 220, and the other end of each group of electrodes is connected to an RF power source. Each group of electrodes includes two electrode assemblies 100, which are connected to the positive and negative poles of the RF power source, respectively.

[0013] Optionally, the housing may be welded to the side wall of the process pipe 200 so as to form the buffer chamber 220 inside the process pipe 200, or the buffer chamber 220 may be formed simultaneously when the process pipe 200 is manufactured. In the embodiments of the present application, the manner of forming the buffer chamber 220 is not particularly limited.

[0014] By installing the electrode assembly 100, the process gas in the buffer chamber 220 can be excited to a plasma state, thereby forming plasma, which then enters the process chamber 210 from the buffer chamber 220 to process the wafer in the process chamber 210. During this process, an RF power supply supplies power to two electrode assemblies 100 in each electrode group via an RF cable.

[0015] 6 , each electrode assembly 100 includes an electrode core 110, a plurality of electrode tubes 120, and an electrode mesh 130. The plurality of electrode tubes 120 are arranged in order along the extension direction of the electrode core 110, with a predetermined gap between adjacent two electrode tubes 120. The electrode core 110 penetrates through the plurality of electrode tubes 120 and is connected to each of the plurality of electrode tubes 120. The electrode mesh 130 is arranged along the extension direction of the electrode core 110 and is fitted around the plurality of electrode tubes 120. In this manner, the electrode core 110, the plurality of electrode tubes 120, and the electrode mesh 130 form a long electrode assembly 100, which extends into the buffer chamber 220 and easily generates a high-frequency electric field. This excites the process gas introduced into the buffer chamber 220 to generate plasma, which then flows from the buffer chamber 220 into the process chamber 210 and realizes a process reaction.

[0016] Optionally, the length of the electrode tube 120 is 8 mm to 16 mm, including 8 mm, 10 mm, 12 mm, 14 mm, 16 mm, etc., and of course other dimensions are also possible. If the length of the electrode tube 120 is too long, it is disadvantageous to install the electrode assembly 100, and if the length of the electrode tube 120 is too short, the processing costs increase. Therefore, when designing and manufacturing the electrode tube 120, installation requirements and cost requirements must be comprehensively considered.

[0017] In order for the electrode assembly 100 to easily penetrate the side wall of the process pipe 200 and extend into the buffer chamber 220, the electrode core 110 in the embodiment of the present application is made of a soft material, which allows the electrode core 110 to deform. This allows the electrode core 110 to adapt to the installation environment by deforming, making it easier to reduce the difficulty of installing the electrode assembly 100.

[0018] Considering that the soft electrode core 110 is likely to affect the service life of the electrode assembly 100, it is necessary to provide the electrode assembly 100 with sufficient strength in order to extend the service life of the electrode assembly 100. Based on this, a plurality of electrode tubes 120 are fitted in sequence on the outside of the electrode core 110 along the extension direction of the electrode core 110, thereby providing support and protection for the electrode core 110 via the plurality of electrode tubes 120, improving the strength of the entire electrode assembly 100 and further reducing changes in the length of the electrode assembly 100 during use.

[0019] The number of electrode tubes 120 can be determined based on the overall length of the electrode assembly 100. If the required length of the electrode assembly 100 is large, the electrode core 110 will be long, in which case more electrode tubes 120 will need to be fitted around the electrode core 110. If the required length of the electrode assembly 100 is small, the electrode core 110 will be short, in which case fewer electrode tubes 120 will need to be fitted around the electrode core 110.

[0020] To allow the entire electrode assembly 100 to deform, a predetermined gap is provided between two adjacent electrode tubes 120. The predetermined gap allows a certain amount of space for variation between the two adjacent electrode tubes 120, making it less likely for the electrode assembly 100 to deform and cause interference, and ensuring the overall flexibility of the electrode assembly 100. A preferred predetermined gap is 30 to 40 mm, including 30 mm, 32 mm, 35 mm, 38 mm, 40 mm, etc. At the same time, each electrode tube 120 can improve the local strength of the electrode assembly 100, thereby providing protection for the electrode core 110 and mitigating changes in the length of the electrode core 110.

[0021] By fitting the electrode mesh 130 on the outside of the multiple electrode tubes 120, the difference in electric field strength caused by the predetermined gap between two adjacent electrode tubes 120 can be compensated for, thereby allowing the plasma to be distributed more uniformly in the direction of the electrode assembly 100.

[0022] Based on the above installation, optionally, there may be multiple buffer chambers 220, which are distributed along the circumferential direction of the process pipe 200 and all communicate with the process chamber 210, and each buffer chamber 220 is provided corresponding to at least one group of electrodes.

[0023] In the embodiment of the present application, a plurality of buffer chambers 220 are provided, and an electrode assembly 100 is installed corresponding to each buffer chamber 220, so that the process gas can be excited in the plurality of buffer chambers 220 simultaneously, and the process gas can be excited in a single buffer chamber 220 simultaneously. 220 In comparison, multiple buffer chambers 220 are advantageous in improving process uniformity.

[0024] By using multiple electrode assemblies 100 to excite the process gas in multiple buffer chambers 220 to form plasma, the power consumption of each electrode assembly 100 can be reduced under the same process conditions, which is advantageous in extending the service life of the electrode assemblies 100.

[0025] In the embodiments of the present application, the number of buffer chambers 220 used can be flexibly adjusted according to different process requirements, thereby avoiding a situation in which energy consumption increases due to an inappropriate number of buffer chambers 220 being used, and achieving a certain degree of energy saving and emission reduction effects.

[0026] In some alternative embodiments, the semiconductor processing apparatus further includes a plurality of intake pipes 600, which extend through the sidewall of the process pipe 200 into the plurality of buffer chambers 220 in a one-to-one correspondence, and are used to introduce process gases into the corresponding buffer chambers 220, to meet the requirements for the process gas. The electrode assembly 100 can form a high-frequency electric field in the buffer chambers 220, so that the process gas introduced into each buffer chamber 220 through the intake pipes 600 is excited into a plasma state by the action of the high-frequency electric field, generating plasma, which can enter the buffer chambers 220 into the inner cavity of the process pipe 200 and easily participate in the process reaction.

[0027] An exhaust port 230 is provided on the side wall of the process pipe 200, and the exhaust port 230 communicates with the process chamber 210 and is used to exhaust gases from within the process chamber 210. During each process step, the process exhaust gases generated within the process chamber 210 can be exhausted through the exhaust port 230, preventing the gas pressure within the process chamber 210 from becoming too high.

[0028] After the process gas is involved in the reaction, it forms exhaust gases due to the reaction in the process chamber 210, which can be discharged through the exhaust port 230, thereby maintaining a basic balance of the atmospheric pressure in the process chamber 210. Optionally, the exhaust port 230 can be connected to an external vacuum device through an exhaust pipe, which can facilitate the exhaust gases due to the reaction in the process chamber 210 to be discharged through the vacuum device, and a certain vacuum degree can be generated in the process chamber 210 through the vacuum device.

[0029] Compared to some current plasma generators that have multiple layers of nickel mesh woven around the outside of the electrode, the semiconductor processing apparatus in this embodiment uses a novel electrode assembly 100 that uses multiple electrode tubes 120 to support and protect the deformable electrode core 110, thereby improving the overall strength of the electrode assembly 100, making it less likely for the electrode assembly 100 to change length due to gravity, extending the service life of the electrode assembly 100, and preventing the electrode assembly 100 from affecting plasma uniformity. At the same time, the electrode assembly 100 in this embodiment does not have multiple layers of nickel mesh around the outside of the electrode core 110, but instead has multiple electrode tubes 120 fitted around the electrode core 110 in the extension direction of the electrode core 110, and an electrode mesh 130 fitted around the multiple electrode tubes 120. This method reduces the amount of nickel mesh used and eliminates the need for multiple layers of nickel mesh, thereby reducing the cost and difficulty of manufacturing the electrode assembly 100.

[0030] In some embodiments, each electrode assembly 100 may include a plurality of electrode cores 110, each of which penetrates through a plurality of electrode tubes 120 and is fixedly connected to the inner walls of the electrode tubes 120. This allows the electrode tubes 120 to support and protect the electrode cores 110, improving the strength of the electrode assembly 100 while ensuring the flexibility of the electrode assembly 100 as a whole, thereby extending the service life of the electrode assembly 100. Furthermore, since the plurality of electrode cores 110 are connected to the inner walls of the electrode tubes 120, the connection between two adjacent electrode tubes 120 can be made stronger and more stable, ensuring the service life of the electrode assembly 100.

[0031] Optionally, the electrode core 110 can be fixed to the inner wall of the electrode tube 120 by welding, adhesive, or the like, thereby improving the robustness of the connection between the electrode core 110 and the inner wall of the electrode tube 120 and further extending the service life of the electrode assembly 100.

[0032] In a more specific embodiment, the electrode assembly 100 may include two electrode cores 110, which are fixedly connected to opposite sides of the inner wall of the electrode tube 120. In this manner, opposite sides of the inner wall of each electrode tube 120 can be fixedly connected, making the force received by the electrode tubes 120 more uniform and thereby ensuring the stability of the connection between two adjacent electrode tubes 120. Of course, the electrode assembly 100 may include other numbers of electrode cores 110, and the number of electrode cores 110 is not particularly limited in the embodiments of the present application.

[0033] The electrode core 110 may be a nickel wire, which has a relatively small diameter and is relatively flexible, facilitating free deformation of the electrode assembly 100. Of course, the electrode core 110 may be made of other materials and have other shapes, and the embodiments of the present application do not specifically limit the material and shape of the electrode core 110.

[0034] The electrode tube 120 may be a nickel tube, the diameter of which is larger than the diameter of the nickel wire, and the nickel tube is hard, making it easy to support and protect the electrode core 110 inserted therein, thereby alleviating the problem of changes in length of the electrode core 110 affecting its service life. Of course, the electrode tube 120 may be made of other materials, and the embodiments of the present application do not specifically limit the material of the electrode tube 120.

[0035] The electrode mesh 130 may be nickel mesh. For the same outer size of the electrode assembly 100, unlike a method of weaving multiple layers of nickel mesh around the electrode core 110, a method of installing the electrode tube 120 around the electrode core 110 and fitting the electrode mesh 130 around the electrode tube 120 eliminates the need for weaving multiple layers of nickel mesh and requires only a thin layer of nickel mesh, such as a single layer of nickel mesh. This method reduces the amount of nickel used, thereby reducing manufacturing costs and difficulty. Naturally, other materials may be used for the electrode mesh 130, and the embodiments of the present application do not specifically limit the material of the electrode mesh 130.

[0036] In some embodiments, two buffer chambers 220 are formed inside the process pipe 200, and the two buffer chambers 220 are symmetrically arranged on both sides of the exhaust port 230. In this manner, the process gas is excited into a plasma state through the electrode assemblies 100 in the two buffer chambers 220, respectively, to form plasma, which then flows into the process chamber 210 through the two buffer chambers 220, respectively, thereby improving the uniformity of the plasma in the process chamber 210 and improving the film formation quality of the process product.

[0037] Naturally, multiple buffer chambers 220 may be further provided symmetrically distributed on both sides of the exhaust port 230 in the circumferential direction of the process pipe 200. In this way, by increasing the number of buffer chambers 220 and distributing multiple buffer chambers 220 evenly around the process chamber 210, it becomes easier to form a more uniform plasma atmosphere within the process chamber 210, and further, the uniformity of the film thickness can be improved.

[0038] In the embodiment of the present application, a plurality of through holes are formed on the side of each buffer chamber 220 away from the process pipe 200, and the through holes are arranged along the axial direction of the process pipe 200 to connect the buffer chamber 220 to the process chamber 210. This increases the flow area of ​​the process gas in the axial direction of the process pipe 200, thereby making the distribution of the process gas in the process chamber 210 more uniform and improving the film formation quality of the processed product.

[0039] In some embodiments, the semiconductor processing equipment may further include a group of protective pipes, the group of protective pipes including at least one protective pipe 300, the protective pipe 300 being a process pipe. 200 220 , and extends into the buffer chamber 220 through the side wall thereof, and at least one electrode assembly 100 of the electrode group is disposed through the protective tube 300. Optionally, the number of groups of protective tubes is the same as the number of groups of electrodes, and the protective tubes are disposed in a one-to-one correspondence. Accordingly, by disposing at least one electrode assembly 100 through the protective tube 300, on the one hand, the electrode assembly 100 can be attached and guided through the protective tube 300, and the end of the electrode assembly 100 can extend into the buffer chamber 220. On the other hand, the protective tube 300 can also prevent contaminants from entering the process chamber 210, thereby providing a protective effect for the electrode assembly 100.

[0040] Optionally, the protective tube 300 may be a quartz tube, etc. The protective tube 300 may be fixed to the process pipe 200 by welding, adhesive, fastening, screwing, etc., to ensure the strength and stability of the connection between the protective tube 300 and the process pipe 200.

[0041] In a more specific embodiment, one group of protective tubes 300 may include two protective tubes 300, and the two electrode assemblies 100 in one electrode group are respectively inserted into the two protective tubes 300, and the two electrode assemblies 100 in the same electrode group are respectively connected to the positive and negative poles of the RF power source. Based on this, the two electrode assemblies 100 in each electrode group can be respectively mounted and protected through the two protective tubes 300.

[0042] In addition, when installing the electrodes, the lengths of the two electrode assemblies 100 in each electrode group within the two protective tubes 300 should be as equal as possible to ensure uniformity of the generated electric field. In addition, the lengths of the cables connected to the RF power supplies of the two electrode assemblies 100 should be as equal as possible to ensure phase consistency of the two electric fields generated by the two electrode assemblies 100.

[0043] The semiconductor processing apparatus may further include a first connection assembly 400 and a second connection assembly 500 provided corresponding to each electrode assembly 100 in order to fix and seal the electrode assembly 100 and the protective tube 300 relative to each other and to connect the electrode assembly 100 to an RF power source. The first connection assembly 400 is fitted onto the outside of the protective tube 300 and the second connection assembly 500 and is hermetically connected to the protective tube 300 and the second connection assembly 500, respectively. One end of the second connection assembly 500 is connected to the electrode assembly 100, and the other end of the second connection assembly 500 is connected to the RF power source. Based on this, the electrode assembly 100 can be attached to the protective tube 300 via the first connection assembly 400 and sealed between the electrode assembly 100 and the protective tube 300, and the electrode assembly 100 can be electrically connected to the RF cable via the second connection assembly 500 and sealed between the electrode assembly 100 and the first connection assembly 400, thereby protecting the connection point between the second connection assembly 500 and the electrode assembly 100 and preventing oxidation of the electrode assembly 100.

[0044] In order to further improve the robustness and stability of the connection between the first connection assembly 400 and the protective tube 300 and to improve the robustness and stability of the attachment of the electrode assembly 100, the semiconductor processing equipment may further include a support block 700, which is fixed to a water-cooled press ring (not shown) of the semiconductor processing equipment with screws, with the top of the support block 700 abutting against the first connection assembly 400 and providing support for the first connection assembly 400. In this way, the engagement between the support block 700 and the protective tube 300 achieves stable attachment of the first connection assembly 400, thereby improving the robustness and stability of the attachment of the electrode assembly 100.

[0045] In some embodiments, the first connection assembly 400 may include an electrode holder 410, a first locking member 420, and a second locking member 430, wherein the electrode holder 410 has a through-hole 411, one end of the electrode assembly 100 is disposed within the through-hole 411, at least a portion of the second connection assembly 500 is disposed within the through-hole 411 and connected to the electrode assembly 100, the electrode holder 410 is connected to the protective tube 300 via the first locking member 420, and the second connection assembly 500 is hermetically connected to the electrode holder 410 via the second locking member 430. Based on this, the first connection assembly 400 and the second connection assembly 500 can be assembled, and the assembly can be hermetically sealed.

[0046] To attach the first connection assembly 400 to the protective tube 300, the first locking member 420 may be provided at one end of the protective tube 300 away from the process pipe 200, and when the first connection assembly 400 needs to be attached, the first connection assembly 400 can be attached to the protective tube 300 by simply connecting the electrode holder 410 to the first locking member 420.

[0047] Optionally, the first locking member 420 is provided with a relief hole, and the first locking member 420 may be regarded as a nut, which is fitted onto the outer wall of the protective tube 300 through the relief hole and fixedly connected to the protective tube 300. Naturally, the first locking member 420 may be movably fitted onto the outside of the protective tube 300, and a separation portion may be provided on the outside of the protective tube 300 to prevent the first locking member 420 from coming off the protective tube 300. Based on this, the stability of the attachment between the first connection assembly 400 and the protective tube 300 can be ensured.

[0048] Optionally, the first locking member 420 may be connected to one end of the electrode holder 410 with a screw, which allows the first connection assembly 400 to removably attach the protective tube 300, making it easier to attach and detach the electrode holder 410, and further easier to replace or maintain the electrode assembly 100.

[0049] Based on the above-described configuration, when it is necessary to remove the electrode assembly 100, the electrode holder 410 and the electrode assembly 100 can be removed together simply by separating the electrode holder 410 and the first locking member 420, making it easy to replace or maintain the electrode assembly 100.

[0050] Considering that one end of the second connection assembly 500 is located within the through-hole chamber 411 and connected to the electrode assembly 100, and the other end is connected to an external RF cable, an escape hole is provided in the second locking member 430 so that the other end of the second connection assembly 500 extends outside the through-hole chamber 411, thereby making it easy to connect the second connection assembly 500 to an external RF cable.

[0051] Optionally, a threaded connection may be adopted between the second locking member 430 and the other end of the electrode holder 410, and the second locking member 430 may be regarded as a nut, facilitating attachment and detachment. Based on this, when there is no need to attach or detach the second connection assembly 500, the second locking member 430 is fastened to the other end of the electrode holder 410. In this case, the second locking member 430 can firmly fix the second connection assembly 500 to the electrode holder 410, preventing the second connection assembly 500 and the electrode assembly 100 from separating, which would affect the transmitted energy. When there is a need to attach or detach the second connection assembly 500, the second locking member 430 is simply removed from the electrode holder 410 to release the stopper effect on the second connection assembly 500, allowing the second connection assembly 500 to be removed. This facilitates attachment and detachment of the second connection assembly 500 and improves the efficiency of replacement or maintenance of the second connection assembly 500.

[0052] In addition, since the connection point between the electrode assembly 100 and the second connection assembly 500 is located inside the through-chamber 411, the electrode holder 410 can provide protection for the connection point between the two, preventing interference from external factors.

[0053] In some embodiments, the semiconductor processing apparatus may further include a protective gas pipeline (not shown), in which a protective gas inlet 450 is opened in the side wall of the through-hole chamber 411, and two protective tubes 300 in the same protective tube group are sealed and connected to the corresponding buffer chamber 220, and the protective gas pipeline is connected to the inside of the protective tube 300 through the protective gas inlet 450 and is used to introduce protective gas.

[0054] Based on the above installation, external protective gas (i.e., antioxidant gas) is introduced into the through-chamber 411 through the protective gas inlet 450, then into the buffer chamber 220 through one of the protective tubes 300, and then discharged through another protective tube 300, thereby realizing a circulating flow of protective gas, which can effectively alleviate the problem of transmission instability caused by oxidation of the electrode assembly 100.

[0055] To achieve a stable connection between the electrode assembly 100 and the second connection assembly 500, the second connection assembly 500 may include an electrode terminal 510 and a fastener 520, in which a first connecting end 511 located within the through-chamber 411 of the electrode terminal 510 is provided with a first mounting hole, and a second connecting end 140 located within the through-chamber 411 of the electrode assembly 100 is provided with a second mounting hole. When attached, the first connecting end 511 and the second connecting end 140 are connected to each other by stacking them, and the fastener 520 passes through the first mounting hole and the second mounting hole in order to fasten and connect the first connecting end 511 and the second connecting end 140.

[0056] Based on the above installation, the fastener 520 is inserted through the first mounting hole and the second mounting hole, thereby preventing the first connecting end 511 and the second connecting end 140 from shifting relative to each other, thereby effectively preventing the first connecting end 511 and the second connecting end 140 from separating from each other.

[0057] Further, the second connection assembly 500 may include a gasket 530, in which a third mounting hole is provided, and the gasket 530 is provided on the side of the second connecting end 140 away from the first connecting end 511, the first mounting hole, the second mounting hole and the third mounting hole are arranged coaxially, and a fastener 520 is provided through the first mounting hole, the second mounting hole and the third mounting hole, and the second connecting end 140 is pressed against the first connecting end 511 through the gasket 530, thereby pressing the second connecting end 140 and the first connecting end 511 against each other, further ensuring good contact between the first connecting end 511 and the second connecting end 140 and avoiding the occurrence of a temporary connection situation.

[0058] Based on the above installation, the embodiment of the present application can not only ensure the robustness and stability of the connection between the first connection end 511 and the second connection end 140, but also effectively avoid the occurrence of temporary connection situations, thereby realizing stable transmission of electrical energy between the electrode assembly 100 and the second connection assembly 500 without causing loss of electrical energy.

[0059] Optionally, the first connecting end 511 and the second connecting end 140 may both have a flat structure, thereby increasing the contact area therebetween and further improving the stability of the connection.

[0060] In order to prevent external factors from entering the through chamber 411 and affecting the connection point between the electrode assembly 100 and the second connection assembly 500, in some embodiments, a first sealing member 440 may be provided between the first locking member 420 and the electrode holder 410, and the first sealing member 440 seals the gap between the first locking member 420 and the electrode holder 410.

[0061] In addition, a second sealing member 440' may be provided between the second locking member 430 and the electrode holder 410, and the gap between the second locking member 430 and the electrode holder 410 can be sealed by the second sealing member 440'.

[0062] Based on the above installation, the first sealing member 440 and the second sealing member 440' can seal the through-chamber 411 when the first locking member 420 is locked to the electrode holder 410 and when the second locking member 430 is locked to the electrode holder 410, thereby preventing external impurities from entering the through-chamber 411 and affecting the connection point between the electrode assembly 100 and the second connection assembly 500, and ensuring the stability and reliability of the connection between the electrode assembly 100 and the second connection assembly 500.

[0063] Optionally, the first sealing member 440 and the second sealing member 440' may both be sealing rings fitted onto both ends of the electrode holder 410, respectively, to prevent the electrode assembly 100 and the second connection assembly 500 from extending outside the through chamber 411.

[0064] The operating principle of the semiconductor processing device in the embodiment of the present application is as follows.

[0065] The external RF source transmits energy to the electrode assembly 100 via an RF cable, forming a high-frequency electric field in the buffer chamber 220 via the electrode assembly 100. The process gas is then introduced into the buffer chamber 220 via the process gas pipe and the intake pipe 600. The process gas is excited by the high-frequency electric field in the buffer chamber 220 and becomes a plasma, generating plasma. The plasma then enters the process chamber 210 from the buffer chamber 220 and participates in the reaction, thereby achieving the process step.

[0066] As described above, in the embodiments of the present application, by improving and optimizing the structure of the electrode assembly 100, it is possible to reduce the use of high-value materials (e.g., nickel), thereby reducing the cost and complexity of the electrode assembly 100; and by optimizing the electrode structure, it is possible to improve the strength of the electrode assembly 100 while ensuring the flexibility of the entire electrode assembly 100, thereby extending the service life of the electrode assembly 100 and improving the reliability of the electrode assembly 100.

[0067] By optimizing the layout of the buffer chamber 220 and improving the uniformity of the high frequency electric field distribution, the uniformity of the plasma in the process chamber 210 can be improved, thereby improving the process performance and ensuring the uniformity of the film thickness.

[0068] Although the examples of the present application have been described above with reference to the drawings, the present application is not limited to the above specific embodiments, which are merely illustrative and not limiting. Those skilled in the art may adopt many more forms under the guidance of the present application without departing from the spirit and scope of the claims of the present application, and all of them fall within the scope of protection of the present application.

Claims

1. a process pipe and an electrode group; a process chamber and a buffer chamber are formed inside the process pipe, the buffer chamber is connected to the process chamber, and the buffer chamber is provided corresponding to at least one group of the electrodes, one end of each group of the electrodes extends through the process chamber into the buffer chamber, and the other end of each group of the electrodes is used to connect to an RF power source; Each of the electrode groups includes two electrode assemblies, each of which is connected to a positive electrode and a negative electrode of the RF power source. Each of the electrode assemblies includes a deformable electrode core, a plurality of electrode tubes, and an electrode mesh. The electrode tubes are arranged in order along the extension direction of the electrode core, with a predetermined gap between two adjacent electrode tubes. The electrode core is inserted through the electrode tubes and connected to the electrode tubes, respectively. The electrode mesh is arranged along the extension direction of the electrode core and fitted around the electrode tubes. Each of the electrode assemblies includes a plurality of the electrode cores, a plurality of electrode cores each extending through a plurality of electrode tubes, each electrode core being fixedly connected to an inner wall of a corresponding one of the plurality of electrode tubes;

2. the electrode core is a nickel wire; and / or the electrode tube is a nickel tube; and / or 2. The semiconductor processing device according to claim 1, wherein said electrode mesh is a nickel mesh.

3. 3. The semiconductor process device according to claim 1, wherein a plurality of the buffer chambers are provided, the plurality of buffer chambers being distributed along a circumferential direction of the process pipe, and all of the buffer chambers being in communication with the process chamber, and each of the buffer chambers being provided corresponding to at least one of the electrode groups.

4. 4. The semiconductor processing apparatus of claim 3, further comprising a plurality of intake pipes extending through a side wall of the process pipe into the plurality of buffer chambers in a one-to-one correspondence, for introducing process gas into the corresponding buffer chambers; and an exhaust port provided in the side wall of the process pipe, the exhaust port communicating with the process chambers, for discharging gas within the process chambers.

5. 5. The semiconductor process apparatus of claim 4, wherein the buffer chambers are two, the two buffer chambers being symmetrically disposed on both sides of the exhaust port, each buffer chamber having a plurality of through holes on a side away from the process pipe, the plurality of through holes being arranged along the axial direction of the process pipe and used to communicate the buffer chamber with the process chamber.

6. 3. The semiconductor process apparatus according to claim 1, further comprising a protective tube group, the protective tube group including at least one protective tube, the protective tube penetrating a side wall of the process pipe and extending into the buffer chamber, and at least one of the electrode assemblies in the electrode group being inserted through the protective tube.

7. 7. The semiconductor processing device according to claim 6, wherein the protective tube group includes two of the protective tubes, and the two electrode assemblies in the electrode group are respectively inserted into the two protective tubes.

8. the semiconductor process device further includes a first connection assembly and a second connection assembly provided corresponding to each of the electrode assemblies; 8. The semiconductor processing apparatus of claim 7, wherein the first connection assembly is fitted around the protective tube and the second connection assembly and hermetically connected to the protective tube and the second connection assembly, one end of the second connection assembly is connected to the electrode assembly, and the other end of the second connection assembly is connected to the RF power source.

9. the first connection assembly includes an electrode holder, a first locking member, and a second locking member; The electrode holder has a through-chamber, one end of the electrode assembly is disposed within the through-chamber, and at least a portion of the second connection assembly is disposed within the through-chamber and connected to the electrode assembly; 9. The semiconductor processing device of claim 8, wherein the electrode holder is hermetically connected to the protective tube via the first locking member, and the second connection assembly is hermetically connected to the electrode holder via the second locking member.

10. the second connection assembly includes an electrode terminal and a fastener; a first mounting hole is provided at a first connection end of the electrode terminal located within the through-chamber, and a second mounting hole is provided at a second connection end of the electrode assembly located within the through-chamber; 10. The semiconductor processing device of claim 9, wherein the first connecting end and the second connecting end are connected to each other by stacking them, and the fastener passes through the first mounting hole and the second mounting hole in order to fasten the first connecting end and the second connecting end together.

11. a first sealing member is provided between the first locking member and the electrode holder, and the first sealing member is used to seal a gap between the first locking member and the electrode holder; and / or 10. The semiconductor processing device of claim 9, wherein a second sealing member is provided between the second locking member and the electrode holder, and the second sealing member is used to seal a gap between the second locking member and the electrode holder.

12. further comprising a protective gas line; 10. The semiconductor processing device according to claim 9, wherein a protective gas inlet is opened in a side wall of the through chamber, two of the protective tubes in the same protective tube group are sealed and communicated in the corresponding buffer chamber, and the protective gas pipeline is communicated with the inside of the protective tube through the protective gas inlet and is used to introduce protective gas.

13. A process pipe and an electrode group, a process chamber and a buffer chamber are formed inside the process pipe, the buffer chamber is connected to the process chamber, and the buffer chamber is provided corresponding to at least one group of the electrodes, one end of each group of the electrodes extends through the process chamber into the buffer chamber, and the other end of each group of the electrodes is used to connect to an RF power source; Each of the electrode groups includes two electrode assemblies, each of which is connected to a positive electrode and a negative electrode of the RF power source. Each of the electrode assemblies includes a deformable electrode core, a plurality of electrode tubes, and an electrode mesh. The electrode tubes are arranged in order along the extension direction of the electrode core, with a predetermined gap between two adjacent electrode tubes. The electrode core is inserted through the electrode tubes and connected to the electrode tubes, respectively. The electrode mesh is arranged along the extension direction of the electrode core and fitted around the electrode tubes. The protective tube group further includes at least one protective tube, The electrode assembly further includes a first connection assembly and a second connection assembly provided corresponding to each of the electrode assemblies, the first connection assembly is fitted onto the outside of the protective tube and the second connection assembly and is hermetically connected to the protective tube and the second connection assembly, respectively, one end of the second connection assembly is connected to the electrode assembly, and the other end of the second connection assembly is connected to the RF power source.

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