Semiconductor device and manufacturing method thereof

Abstract

To provide a semiconductor device and a method for manufacturing the same, capable of obtaining stable characteristics.SOLUTION: According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first nitride region includes a first nitride portion. The first nitride portion includes a first position. The first position is a center of the first nitride portion in a second direction. A third partial region of the first semiconductor region includes a first face facing the first nitride portion. A chlorine concentration at the first position is lower than a chlorine concentration at the first face.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a semiconductor device and a manufacturing method thereof. [Background technology]

[0002] For example, stable characteristics are desired in semiconductor devices. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-57092 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments of the present invention provide a semiconductor device and a method for manufacturing the same that can provide stable characteristics. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. A direction from the first electrode to the second electrode is along a first direction. The third electrode includes a first electrode portion. A position of the third electrode in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor region is Al x1 Ga 1-x1It includes N(0≦x1<1). The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The second direction from the first partial region to the first electrode intersects the first direction. The direction from the second partial region to the second electrode is along the second direction. The direction from the third partial region to the first electrode portion is along the second direction. The position of the fourth partial region in the first direction is between the position of the first partial region in the first direction and the position of the third partial region in the first direction. The position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and the position of the second partial region in the first direction. The second semiconductor region contains Al x2 Ga 1-x2 It includes N(0<x2<1, x1<x2). The second semiconductor region includes a first semiconductor portion and a second semiconductor portion. The direction from the fourth partial region to the first semiconductor portion is along the second direction. The direction from the fifth partial region to the second semiconductor portion is along the second direction. The first nitride region contains Al z1 Ga 1-z1 It includes N(0<z1≦1, x2<z1). The first nitride region includes a first nitride portion. The first nitride portion is between the third partial region and the first electrode portion. The first insulating member includes a first insulating portion. The first insulating portion is between the first nitride portion and the first electrode portion. The first nitride portion includes a first position. The first position is the center of the first nitride portion in the second direction. The third partial region includes a first surface facing the first nitride portion. The chlorine concentration at the first position is lower than the chlorine concentration at the first surface.

Brief Description of the Drawings

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 2] FIGS. 2(a) and 2(b) are graphs illustrating the characteristics of the semiconductor device. [Figure 3]3(a) and 3(b) are graphs illustrating the characteristics of the semiconductor device. [Figure 4] 4(a) and 4(b) are graphs illustrating the characteristics of the semiconductor device. [Figure 5] FIG. 5 is a graph illustrating the characteristics of the semiconductor device according to the first embodiment. [Figure 6] FIG. 6 is a graph illustrating the characteristics of the semiconductor device according to the first embodiment. [Figure 7] FIG. 7 is a flowchart illustrating a method for manufacturing a semiconductor device according to the second embodiment. [Figure 8] 5A to 5C are schematic cross-sectional views illustrating a part of a method for manufacturing a semiconductor device according to a second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) FIG. 1 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. As shown in FIG. 1, the semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor region 10, a second semiconductor region 20, a first nitride region 30, and a first insulating member 41.

[0009] The direction from the first electrode 51 to the second electrode 52 is along the first direction D1. The first direction is the X-axis direction. One direction perpendicular to the X-axis direction is the Z-axis direction. The direction perpendicular to the X-axis and Z-axis directions is the Y-axis direction.

[0010] The third electrode 53 includes a first electrode portion 53a. The position of the third electrode 53 in the first direction D1 is between the position of the first electrode 51 in the first direction D1 and the position of the second electrode 52 in the first direction D1.

[0011] The first semiconductor region 10 contains Al x1 Ga 1-x1 N (0 ≦ x1 < 1). The composition ratio x1 may be, for example, 0 or more and 0.1 or less. The first semiconductor region 10 is, for example, a GaN layer. The first semiconductor region 10 includes a first partial region 11, a second partial region 12, a third partial region 13, a fourth partial region 14, and a fifth partial region 15. The second direction D2 from the first partial region 11 to the first electrode 51 intersects the first direction D1. The second direction D2 is, for example, the Z-axis direction.

[0012] The direction from the second partial region 12 to the second electrode 52 is along the second direction D2. The direction from the third partial region 13 to the first electrode portion 53a is along the second direction D2. The position of the fourth partial region 14 in the first direction D1 is between the position of the first partial region 11 in the first direction D1 and the position of the third partial region 13 in the first direction D1. The position of the fifth partial region 15 in the first direction D1 is between the position of the third partial region 13 in the first direction D1 and the position of the second partial region 12 in the first direction D1.

[0013] The second semiconductor region 20 contains Al x2 Ga 1-x2 N (0 < x2 < 1, x1 < x2). The composition ratio x2 may be, for example, 0.13 or more and 0.25 or less. The second semiconductor region 20 is, for example, an AlGaN layer. The second semiconductor region 20 includes a first semiconductor portion 21 and a second semiconductor portion 22. The direction from the fourth partial region 14 to the first semiconductor portion 21 is along the second direction D2. The direction from the fifth partial region 15 to the second semiconductor portion 22 is along the second direction D2.

[0014] The first nitride region 30 contains Al z1 Ga 1-z1It includes N(0 < z1 ≤ 1, x2 < z1). The composition ratio z1 may be, for example, 0.8 or more and 1 or less. The first nitride region 30 may be, for example, an AlN layer. The first nitride region 30 includes a first nitride portion 31. The first nitride portion 31 is between the third partial region 13 and the first electrode portion 53a.

[0015] The first insulating member 41 includes a first insulating portion 41a. The first insulating portion 41a is between the first nitride portion 31 and the first electrode portion 53a.

[0016] The current flowing between the first electrode 51 and the second electrode 52 is controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be, for example, a potential based on the potential of the first electrode 51. The first electrode 51 functions as, for example, a source electrode. The second electrode 52 functions as, for example, a drain electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0017] The first semiconductor region 10 includes a portion facing the second semiconductor region 20. In this portion, a carrier region is formed. The carrier region is, for example, a two-dimensional electron gas. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor).

[0018] In the embodiment, in the region including the first nitride portion 31, the chlorine concentration is appropriately controlled. Thereby, stable operation is obtained.

[0019] FIG. 2(a) and FIG. 2(b) are graphs illustrating the characteristics of the semiconductor device. These figures illustrate the SIMS analysis results of the semiconductor device. FIG. 2(a) corresponds to the semiconductor device 110 according to the embodiment. FIG. 2(b) corresponds to the semiconductor device 119 of the reference example. The horizontal axis of these figures is the position pZ in the Z-axis direction. The vertical axis of these figures is the chlorine concentration C(Cl).

[0020] As shown in FIG. 2(a), the first nitride portion 31 includes a first position P1 (see FIG. 1). The first position P1 is the center of the first nitride portion 31 in the second direction D2 (Z-axis direction). As shown in FIG. 2(a), the third partial region 13 includes a first face F1 (see FIG. 1). The first face F1 faces the first nitride portion 31.

[0021] As shown in FIG. 2(a), the chlorine concentration CP1 at the first position P1 is lower than the chlorine concentration CF1 on the first surface F1.

[0022] The chlorine concentration CF1 on the first surface F1 is, for example, 5.16 × 10 15 cm -3 Over 2.58 x 10 16 cm -3 The chlorine concentration CF1 on the first surface F1 is, for example, 6.44 × 10 16 cm -3 Over 1.43 x 10 17 cm -3 The following is also fine.

[0023] The chlorine concentration CP1 at the first position P1 is, for example, 2.00 × 10 15 cm -3 Over 5.16 x 10 16 cm -3 The chlorine concentration CP1 at the first position P1 is, for example, 2.00 × 10 16 cm -3 Over 6.44 x 10 16 cm -3 The following is also fine.

[0024] 2(a), the first nitride portion 31 includes a second surface F2 (see FIG. 1). The second surface F2 faces the first insulating portion 41a. The chlorine concentration CP1 at the first position P1 is lower than the chlorine concentration CF2 at the second surface F2.

[0025] The chlorine concentration CF2 on the second surface F2 is, for example, 5.16 × 10 15 cm -33.35 x 10 16 cm -3 The chlorine concentration CF2 on the second surface F2 is, for example, 6.44 × 10 15 cm -3 Over 1.86 x 10 17 cm -3 The following is also fine.

[0026] As shown in FIG. 2(a), the chlorine concentration CI1 in the first insulating portion 41a is lower than the chlorine concentration CF2 in the second surface F2.

[0027] The first surface F1 corresponds to the interface between the third sub-region 13 and the first nitride portion 31. The second surface F2 corresponds to the interface between the first nitride portion 31 and the first insulating portion 41a. The chlorine concentration at the first position P1 is lower than the chlorine concentration at these interfaces. Furthermore, the chlorine concentration at these interfaces is not excessively high. In the embodiment, the region including the first surface F1 and the second surface F2 contains an appropriate concentration of chlorine. As a result, for example, it is considered that dangling bonds of Ga are appropriately terminated with chlorine on the first surface F1 of the third sub-region 13 (e.g., GaN). For example, it is considered that dangling bonds of elements included in the first nitride portion 31 are appropriately terminated with chlorine on the second surface F2 of the first nitride portion 31 (e.g., AlN). As a result, stable characteristics are obtained. Examples of the characteristics will be described later.

[0028] Such a semiconductor device 110 can be obtained, for example, by removing a portion of the second semiconductor region 20 formed on the first semiconductor region 10 with a gas containing chlorine, and then performing a process with an inert gas such as Ar.

[0029] 2(b) corresponds to a reference example semiconductor device 119. In the semiconductor device 119, the above-described treatment using an inert gas such as Ar is not performed after a portion of the second semiconductor region 20 is removed with a chlorine-containing gas.

[0030] 2(b), in the semiconductor device 119, the chlorine concentration CP1 at the first position P1 is higher than the chlorine concentration CF1 at the first surface F1. The chlorine concentration CP1 at the first position P1 is higher than the chlorine concentration CF2 at the second surface F2. The first nitride portion 31 contains chlorine at a high concentration. In such a semiconductor device 119, the characteristics are prone to change.

[0031] 2(a) and 2(b), the increase in chlorine concentration C(Cl) on the surface side of the first insulating portion 41a (the region where the position pZ is 0 nm or more and 5 nm or less) is due to the analysis method or the sample. The high chlorine concentration C(Cl) on the surface side of the first insulating portion 41a (the region where the position pZ is 0 nm or more and 5 nm or less) can be ignored.

[0032] In the embodiment, for example, the maximum value of the chlorine concentration C(Cl) in the portion including the first insulating portion 41a, the first nitride portion 31, and the third partial region 13 is, for example, 2×10 15 cm -3 Over 3.4 x 10 16 cm -3 For example, the maximum value of the chlorine concentration C(Cl) in the portion including the first insulating portion 41a, the first nitride portion 31, and the third partial region 13 may be, for example, 2.00×10 16 cm -3 Over 5.01 x 10 16 cm -3 The following is fine: Chlorine Concentration of is controlled within an appropriate range, resulting in stable characteristics.

[0033] Examples of the characteristics of the semiconductor device 110 and the semiconductor device 119 will be described below. 3(a) and 3(b) are graphs illustrating the characteristics of the semiconductor device. The horizontal axis of these figures is the time tm elapsed in the bias application test. In the bias application test, a voltage of +1V is applied between the source and drain, and a voltage of +15V is applied between the source and gate. The vertical axis of these figures is the threshold voltage change ΔVth. The threshold voltage change ΔVth is the change in threshold voltage based on the initial threshold voltage (time tm is 0 s).

[0034] 3(a), in the semiconductor device 110, the threshold voltage change ΔVth becomes 0 as time tm passes. As shown in FIG. 3(b), in the semiconductor device 119, the threshold voltage change ΔVth changes to the negative side as time tm passes, and shifts significantly from 0. In this way, a stable threshold voltage is obtained in the semiconductor device 110.

[0035] 4(a) and 4(b) are graphs illustrating the characteristics of the semiconductor device. The horizontal axis of these figures is the gate voltage Vg. The vertical axis of these figures is the drain current Id. These figures illustrate the characteristics before the bias application test (tm=0 s) and the characteristics when the time tm in the bias application test is 1000 s.

[0036] figure 4 As shown in (a), in the semiconductor device 110, the difference between the drain current Id when the time tm is 0 s and the drain current Id when the time tm is 1000 s is small. 4 As shown in (b), there is a large difference between the drain current Id when the time tm is 0 s and the drain current Id when the time tm is 1000 s in the semiconductor device 119. In this way, a stable drain current Id can be obtained in the semiconductor device 110.

[0037] In this way, the semiconductor device 110 according to the embodiment can provide a semiconductor device that can obtain stable characteristics.

[0038] FIG. 5 is a graph illustrating the characteristics of the semiconductor device according to the first embodiment. 5 illustrates the results of SIMS analysis of the semiconductor device 110. In FIG. 5, the hydrogen concentration C(H) is shown by a solid line. In FIG. 5, the chlorine concentration C(Cl) illustrated in FIG. 2(a) is shown by a dashed line. The hydrogen concentration C(H) corresponds to the left vertical axis. The chlorine concentration C(Cl) corresponds to the right vertical axis. The horizontal axis represents the position pZ in the Z-axis direction.

[0039] 5, the first insulating portion 41a includes a second position P2 (see FIG. 1). The direction from the first position P1 to the second position P2 is along the second direction D2 (Z-axis direction).

[0040] 5, the hydrogen concentration HP2 at the second position P2 is higher than the hydrogen concentration HF1 at the first surface F1. The hydrogen concentration HF2 at the second surface F2 is between the hydrogen concentration HP2 at the second position P2 and the hydrogen concentration HF1 at the first surface F1.

[0041] For example, the hydrogen concentration in the portion including the first insulating portion 41a, the first nitride portion 31, and the third partial region 13 peaks at the second position P2. The hydrogen concentration HP2 at the second position P2 is, for example, 6.0×10 18 cm -3 Over 1.70 x 10 21 cm -3 The hydrogen concentration HF1 on the first surface F1 is, for example, 4.0×10 17 cm -3 Over 8.7 x 10 18 cm -3 The following is the result.

[0042] Thus, the second position P2 of the hydrogen concentration peak is located within the first insulating portion 41a. For example, the hydrogen concentration is low on the first surface F1 and the second surface F2. This reduces the influence of hydrogen at the interface, resulting in more stable operation.

[0043] 5, the increase in the hydrogen concentration C(H) on the surface side of the first insulating portion 41a (the region where the position pZ is 0 nm or more and 5 nm or less) is due to the analysis method or the sample. The high hydrogen concentration C(H) on the surface side of the first insulating portion 41a (the region where the position pZ is 0 nm or more and 5 nm or less) can be ignored.

[0044] As shown in FIG. 1, in the semiconductor device 110, for example, the first nitride portion 31 is located between the fourth sub-region 14 and the fifth sub-region 15 in the first direction D1. The first insulating portion 41a is located between the fourth sub-region 14 and the fifth sub-region 15 in the first direction D1. At least a portion of the first electrode portion 53a is located between the first semiconductor portion 21 and the second semiconductor portion 22 in the first direction D1. The third electrode 53 is, for example, a gate electrode with a recess structure. This configuration provides a high threshold voltage. For example, a normally-off operation can be achieved.

[0045] In the embodiment, the thickness of the first nitride portion 31 along the second direction D2 is, for example, 1 nm or more and 10 nm or less, which can provide, for example, high mobility.

[0046] The thickness of the first insulating portion 41a along the second direction D2 is, for example, not less than 20 nm and not more than 40 nm, which allows, for example, an appropriate threshold voltage to be obtained.

[0047] 1, the first nitride region 30 may further include a second nitride portion 32 and a third nitride portion 33. The second nitride portion 32 is located between the first semiconductor portion 21 and the first electrode portion 53a in the first direction D1. The third nitride portion 33 is located between the first electrode portion 53a and the second semiconductor portion 22 in the first direction D1.

[0048] 1, the semiconductor device 110 may further include a second insulating member 42. The second insulating member 42 includes a first insulating region 42a and a second insulating region 42b. The first nitride region 30 may further include a fourth nitride portion 34 and a fifth nitride portion 35. The first insulating region 42a is located between the first semiconductor portion 21 and the fourth nitride portion 34. The second insulating region 42b is located between the second semiconductor portion 22 and the fifth nitride portion 35.

[0049] The second insulating member 42 functions as, for example, a protective film. The second insulating member 42 may contain silicon and nitrogen. The first insulating member 41 contains silicon and oxygen. For example, the concentration of nitrogen in the second insulating member 42 is higher than the concentration of nitrogen contained in the first insulating member 41. For example, the concentration of oxygen in the first insulating member 41 is higher than the concentration of oxygen contained in the second insulating member 42.

[0050] The first nitride portion 31, the second nitride portion 32, and the third nitride portion 33 include crystals (including microcrystals), and the fourth nitride portion 34 and the fifth nitride portion 35 may include amorphous regions.

[0051] 1, the semiconductor device 110 may include a substrate 18s and a nitride layer 18. The nitride layer 18 is located between the substrate 18s and the first semiconductor region 10. The substrate 18s may include, for example, a silicon substrate. The nitride layer 18 includes nitrogen and at least one selected from the group consisting of Al and Ga. The nitride layer 18 is, for example, a buffer layer.

[0052] FIG. 6 is a graph illustrating the characteristics of the semiconductor device according to the first embodiment. 6 is the peak concentration Cmax(Cl) of chlorine in the region including the first surface F1, the second surface F2, and the first nitride portion 31. In one example, the peak concentration Cmax(Cl) is the chlorine concentration CF1 at the first surface F1, the chlorine concentration CP1 at the first position P1, and the chlorine concentration CP2 at the second surface F2. Salt 6 represents the threshold voltage change ΔVth.

[0053] As shown in Figure 6, the peak concentration of chlorine, Cmax(Cl), is approximately 3.2 × 10 16 cm -3 In the following region, when the chlorine peak concentration Cmax(Cl) increases, the absolute value of the threshold voltage change ΔVth decreases. 16 cm -3 In the region exceeding 0.1 V, when the chlorine peak concentration Cmax(Cl) increases, the absolute value of the threshold voltage change ΔVth increases. By setting the chlorine peak concentration Cmax(Cl) in an appropriate range, the absolute value of the threshold voltage change ΔVth can be reduced.

[0054] It is preferable that the chlorine peak concentration Cmax(Cl) satisfies at least one of the first and second conditions. In the first condition, the peak concentration Cmax(Cl) is 2.1×10 in GaN quantification. 16 cm -3 Over 6.72 x 10 16 cm -3 Under the second condition, the peak concentration Cmax(Cl) is 1.6×10 17 cm -3 Over 3.87 x 10 17 cm -3 Under these conditions, for example, a small absolute value of the threshold voltage change ΔVth can be obtained. For example, the absolute value of the threshold voltage change ΔVth is 1.0 V or less.

[0055] (Second embodiment) The second embodiment relates to a method for manufacturing a semiconductor device. Fig. 7 is a flowchart illustrating a method for manufacturing a semiconductor device according to the second embodiment. Fig. 8 is a schematic cross-sectional view illustrating a part of the method for manufacturing a semiconductor device according to the second embodiment. As shown in Figure 8, a structure 10B is prepared. The structure 10B is made of Al x1 Ga 1-x1 a first semiconductor layer 10L containing N (0≦x1<1) and Al x2 Ga 1-x2It includes a second semiconductor layer 20L including N(0 < x2 < 1, x1 < x2).

[0056] As shown in FIG. 8, a part of the second semiconductor layer 20L of the structure 10B is removed to form a recess 10R, and a part 10p of the first semiconductor layer 10L is exposed at the bottom of the recess 10R (step S110 in FIG. 7).

[0057] As shown in FIG. 8, a part 10p of the exposed first semiconductor layer 10L is treated with a gas. The gas contains at least one element 81 selected from the group consisting of Ar, He, Ne, and Kr. For example, treatment with a gas containing Ar is performed (step S120 in FIG. 7). By this treatment, excess chlorine contained in a part 10p of the first semiconductor layer 10L is removed. At this time, chlorine with an appropriate concentration remains on the surface of a part 10p of the first semiconductor layer 10L. Thereby, termination is appropriately performed on the surface of a part 10p of the first semiconductor layer 10L.

[0058] As shown in FIG. 7, on a part 10p of the first semiconductor layer 10L of the processed structure 10B, Al z1 Ga 1-z1 A first nitride region 30 including N(0 < z1 ≦ 1, x2 < z1) is formed (step S130). If necessary, the second insulating member 42 may be formed before the formation of the first nitride region 30.

[0059] A first insulating member 41 is formed on the first nitride region 30 (step S140).

[0060] In the remaining space of the recess 10R, a conductive member is embedded on the first insulating member 41 to form a third electrode 53, and a first electrode 51 electrically connected to a part of the second semiconductor layer 20L and a second electrode 52 electrically connected to another part of the second semiconductor layer 20L are formed (step S150). At least a part of the third electrode 53 is between the first electrode 51 and the second electrode 52.

[0061] In the above-described step S110, the formation of the recess 10R includes, for example, a process using chlorine. The process using chlorine includes, for example, a process using a gas containing at least one selected from the group consisting of BCl3 and SiCl4.

[0062] The gas treatment in step S120 may include, for example, removing some of the chlorine remaining in the exposed portion 10p of the first semiconductor layer 10L. The gas treatment in step S120 may include, for example, removing a surface portion of the exposed portion 10p of the first semiconductor layer 10L.

[0063] In forming the recess 10R, the sidewall of the recess 10R may be tapered. For example, the angle θ1 (see FIG. 8) between the surface of the second semiconductor layer 20L and the sidewall of the recess 10R is greater than 90 degrees. The angle θ1 may be greater than or equal to 110 degrees and less than or equal to 130 degrees.

[0064] The embodiment may include the following configurations (e.g., technical solutions). (Configuration 1) A first electrode; a second electrode, the direction from the first electrode to the second electrode being along a first direction; a third electrode including a first electrode portion, the position of the third electrode in the first direction being between the position of the first electrode in the first direction and the position of the second electrode in the first direction; Al x1 Ga 1-x1A first semiconductor region including N(0≦x1<1), wherein the first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region to the first electrode intersects the first direction, a direction from the second partial region to the second electrode is along the second direction, a direction from the third partial region to the first electrode portion is along the second direction, a position of the fourth partial region in the first direction is between a position of the first partial region in the first direction and a position of the third partial region in the first direction, and a position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and a position of the second partial region in the first direction; the first semiconductor region; Al x2 Ga 1-x2 A second semiconductor region including N(0<x2<1, x1<x2), wherein the second semiconductor region includes a first semiconductor portion and a second semiconductor portion, a direction from the fourth partial region to the first semiconductor portion is along the second direction, and a direction from the fifth partial region to the second semiconductor portion is along the second direction; the second semiconductor region; Al z1 Ga 1-z1 A first nitride region including N(0<z1≦1, x2<z1), wherein the first nitride region includes a first nitride portion, and the first nitride portion is between the third partial region and the first electrode portion; the first nitride region; A first insulating member including a first insulating portion, wherein the first insulating portion is between the first nitride portion and the first electrode portion; the first insulating member; Comprising; The first nitride portion includes a first position; The first position is at the center of the first nitride portion in the second direction; The third partial region includes a first surface facing the first nitride portion; A semiconductor device in which a chlorine concentration at the first position is lower than a chlorine concentration at the first surface.

[0065] (Configuration 2) the first nitride portion includes a second surface facing the first insulating portion; 2. The semiconductor device of configuration 1, wherein the chlorine concentration at the first location is lower than the chlorine concentration at the second surface.

[0066] (Configuration 3) 3. The semiconductor device according to configuration 2, wherein the chlorine concentration in the first insulating portion is lower than the chlorine concentration in the second surface.

[0067] (Configuration 4) a peak concentration of chlorine in the first surface, the second surface, and a region including the first nitride portion satisfies at least one of a first condition and a second condition; Under the first condition, the peak concentration is 2.1×10 in GaN quantification. 16 cm -3 Over 6.72 x 10 16 cm -3 is as follows: Under the second condition, the peak concentration is 1.6 × 10 in SiO2 quantification. 17 cm -3 Over 3.87 x 10 17 cm -3 4. The semiconductor device according to configuration 2 or 3, wherein:

[0068] (Configuration 5) A first electrode; a second electrode, the direction from the first electrode to the second electrode being along a first direction; a third electrode including a first electrode portion, the position of the third electrode in the first direction being between the position of the first electrode in the first direction and the position of the second electrode in the first direction; Al x1 Ga 1-x1A first semiconductor region including N(0≦x1<1), wherein the first semiconductor region includes a first sub-region, a second sub-region, a third sub-region, a fourth sub-region, and a fifth sub-region. A second direction from the first sub-region to the first electrode intersects the first direction. A direction from the second sub-region to the second electrode is along the second direction. A direction from the third sub-region to the first electrode portion is along the second direction. A position of the fourth sub-region in the first direction is between a position of the first sub-region in the first direction and a position of the third sub-region in the first direction. A position of the fifth sub-region in the first direction is between the position of the third sub-region in the first direction and a position of the second sub-region in the first direction. The first semiconductor region and, Al x2 Ga 1-x2 A second semiconductor region including N(0<x2<1, x1<x2), wherein the second semiconductor region includes a first semiconductor part and a second semiconductor part. A direction from the fourth sub-region to the first semiconductor part is along the second direction. A direction from the fifth sub-region to the second semiconductor part is along the second direction. The second semiconductor region and, Al z1 Ga 1-z1 A first nitride region including N(0<z1≦1, x2<z1), wherein the first nitride region includes a first nitride part, and the first nitride part is between the third sub-region and the first electrode portion. The first nitride region and, A first insulating member including a first insulating part, wherein the first insulating part is between the first nitride part and the first electrode portion. The first insulating member and, Comprising, The third sub-region includes a first surface facing the first nitride part, The first nitride part includes a second surface facing the first insulating part, A peak concentration of chlorine in the region including the first surface, the second surface, and the first nitride part satisfies at least one of a first condition and a second condition, In the first condition, the peak concentration is 2.1×10 in GaN quantification 16 cm-3 Over 6.72 x 10 16 cm -3 is as follows: Under the second condition, the peak concentration is 1.6 × 10 in SiO2 quantification. 17 cm -3 Over 3.87 x 10 17 cm -3 The semiconductor device is as follows:

[0069] (Configuration 6) the first insulating portion includes a second location; 6. The semiconductor device according to any one of configurations 3 to 5, wherein the hydrogen concentration at the second position is higher than the hydrogen concentration at the first surface.

[0070] (Configuration 7) 7. The semiconductor device of configuration 6, wherein the hydrogen concentration at the second surface is between the hydrogen concentration at the second position and the hydrogen concentration at the first surface.

[0071] (Configuration 8) the concentration of hydrogen in the portion including the first insulating portion, the first nitride portion, and the third portion region peaks at the second position; The hydrogen concentration at the second position is 6.0×10 18 cm -3 Over 1.70 x 10 21 cm -3 8. The semiconductor device according to configuration 6 or 7, wherein:

[0072] (Configuration 9) The hydrogen concentration on the first surface is 4.0×10 17 cm -3 Over 8.7 x 10 18 cm -3 The semiconductor device according to any one of configurations 6 to 8, which is as follows:

[0073] (Configuration 10) 10. The semiconductor device according to any one of configurations 1 to 9, wherein the first nitride portion is located between the fourth partial region and the fifth partial region in the first direction.

[0074] (Configuration 11) 11. The semiconductor device according to any one of configurations 1 to 10, wherein the first insulating portion is located between the fourth partial region and the fifth partial region in the first direction.

[0075] (Configuration 12) 12. The semiconductor device according to any one of configurations 1 to 11, wherein at least a portion of the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the first direction.

[0076] (Configuration 13) The x1 is equal to or greater than 0 and equal to or less than 0.1, The x2 is 0.13 or more 0.25 is as follows: 13. The semiconductor device according to any one of configurations 1 to 12, wherein z1 is 0.8 or more and 1 or less.

[0077] (Configuration 14) 14. The semiconductor device according to any one of configurations 1 to 13, wherein the thickness of the first nitride portion along the second direction is 1 nm or more and 10 nm or less.

[0078] (Configuration 15) 15. The semiconductor device according to any one of configurations 1 to 14, wherein the thickness of the first insulating portion along the second direction is 20 nm or more and 40 nm or less.

[0079] (Configuration 16) the first nitride region further includes a second nitride portion and a third nitride portion; the second nitride portion is between the first semiconductor portion and the first electrode portion in the first direction; 16. The semiconductor device according to any one of configurations 1 to 15, wherein the third nitride portion is located between the first electrode portion and the second semiconductor portion in the first direction.

[0080] (Configuration 17) further comprising a second insulating member; The second insulating member includes a first insulating region and a second insulating region, The first nitride region further includes a fourth nitride portion and a fifth nitride portion, The first insulating region is between the first semiconductor portion and the fourth nitride portion, The semiconductor device according to any one of Configurations 1 to 16, wherein the second insulating region is between the second semiconductor portion and the fifth nitride portion.

[0081] (Configuration 18) Al x1 Ga 1-x1 A first semiconductor layer containing Al x2 Ga 1-x2 N (0≦x1<1), and a second semiconductor layer containing Al z1 Ga 1-z1 N (0<x2<1, x1<x2), a recess is formed by removing a part of the second semiconductor layer of the structure, and a part of the first semiconductor layer is exposed at the bottom of the recess, The exposed part of the first semiconductor layer is treated with a gas containing at least one element selected from the group consisting of Ar, He, Ne, and Kr, On the treated part of the first semiconductor layer of the structure, a first nitride region containing Al z1 Ga 1-z1 N (0<z1≦1, x2<z1) is formed, A first insulating member is formed on the first nitride region, In the remaining space of the recess, a conductive member is embedded on the first insulating member to form a third electrode, a first electrode electrically connected to a part of the second semiconductor layer, and a second electrode electrically connected to another part of the second semiconductor layer are formed, and at least a part of the third electrode is between the first electrode and the second electrode. A method of manufacturing a semiconductor device.

[0082] (Configuration 19) The method of manufacturing a semiconductor device according to Configuration 18, wherein the formation of the recess includes a treatment using chlorine.

[0083] (Configuration 20) 20. The method of claim 19, wherein the treating with the gas comprises removing a portion of the chlorine remaining in the exposed portion of the first semiconductor layer.

[0084] According to the embodiment, it is possible to provide a semiconductor device that can obtain stable characteristics and a method for manufacturing the same.

[0085] The embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configurations of the elements included in the semiconductor device, such as the electrodes, semiconductor regions, nitride regions, and insulating members, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0086] Any combination of two or more elements of each example within the scope of technical feasibility is also included within the scope of the present invention as long as it encompasses the gist of the present invention.

[0087] All semiconductor devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0088] Within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it is understood that these modifications and alterations also fall within the scope of the present invention.

[0089] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0090] 10: first semiconductor region, 10B: structure, 10L: first semiconductor layer, 10R: recess, 10p: part, 11-15: first to fifth partial regions, 18: nitride layer, 18s: substrate, 20: second semiconductor region, 20L: second semiconductor layer, 21, 22: first and second semiconductor portions, 30: first nitride region, 31-35: first to fifth nitride portions, 41: first insulating member, 41a: first insulating portion, 42: second insulating member, 42a, 42b: first and second insulating regions, 51-53: first to third electrodes, 53a: first electrode portion, 81: element, 110, 119: semiconductor device, CF1, CF2: chlorine concentration, CI1: chlorine concentration, CP1: chlorine concentration, D1, D2: first and second directions, F1, F2: first and second surfaces, HF1, HF2: hydrogen concentration, HP2: hydrogen concentration, Id: drain current, P1, P2: first and second positions, Vg: gate voltage, ΔVth: threshold voltage change, θ1: angle

Claims

1. A first electrode; a second electrode, the direction from the first electrode to the second electrode being along a first direction; a third electrode including a first electrode portion, the position of the third electrode in the first direction being between the position of the first electrode in the first direction and the position of the second electrode in the first direction; Al ｘ１ Ga １－ｘ１ a first semiconductor region including N (0≦x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region to the first electrode intersects with the first direction, a direction from the second partial region to the second electrode is along the second direction, a direction from the third partial region to the first electrode portion is along the second direction, a position of the fourth partial region in the first direction is between a position of the first partial region in the first direction and a position of the third partial region in the first direction, and a position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and a position of the second partial region in the first direction; Al ｘ２ Ga １－ｘ２ N (0<x2<1, x1<x2), the second semiconductor region including a first semiconductor portion and a second semiconductor portion, the direction from the fourth sub-region to the first semiconductor portion being along the second direction, and the direction from the fifth sub-region to the second semiconductor portion being along the second direction; Al ｚ１ Ga １－ｚ１ a first nitride region including N (0<z1≦1, x2<z1), the first nitride region including a first nitride portion, the first nitride portion being between the third portion region and the first electrode portion; a first insulating member including a first insulating portion, the first insulating portion being between the first nitride portion and the first electrode portion; Equipped with the first nitride portion includes a first location; the first position is a center of the first nitride portion in the second direction; the third portion region includes a first surface facing the first nitride portion; The semiconductor device, wherein the chlorine concentration at the first location is lower than the chlorine concentration at the first surface.

2. the first nitride portion includes a second surface facing the first insulating portion; The semiconductor device according to claim 1 , wherein the chlorine concentration at the first location is lower than the chlorine concentration at the second surface.

3. The semiconductor device according to claim 2 , wherein the chlorine concentration in said first insulating portion is lower than the chlorine concentration in said second surface.

4. a peak concentration of chlorine in the first surface, the second surface, and a region including the first nitride portion satisfies at least one of a first condition and a second condition; Under the first condition, the peak concentration is 2.1×10 in GaN quantification. １６ cm －３ 6.72 x 10 １６ cm －３ is as follows: In the second condition, the peak concentration is SiO ２ In the quantitative determination, 1.6 x 10 １７ cm －３ 3.87 x 10 １７ cm －３ 3. The semiconductor device according to claim 2, wherein:

5. A first electrode; a second electrode, the direction from the first electrode to the second electrode being along a first direction; a third electrode including a first electrode portion, the position of the third electrode in the first direction being between the position of the first electrode in the first direction and the position of the second electrode in the first direction; Al ｘ１ Ga １－ｘ１ a first semiconductor region including N (0≦x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region to the first electrode intersects with the first direction, a direction from the second partial region to the second electrode is along the second direction, a direction from the third partial region to the first electrode portion is along the second direction, a position of the fourth partial region in the first direction is between a position of the first partial region in the first direction and a position of the third partial region in the first direction, and a position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and a position of the second partial region in the first direction; Al ｘ２ Ga １－ｘ２ N (0<x2<1, x1<x2), the second semiconductor region including a first semiconductor portion and a second semiconductor portion, the direction from the fourth sub-region to the first semiconductor portion being along the second direction, and the direction from the fifth sub-region to the second semiconductor portion being along the second direction; Al ｚ１ Ga １－ｚ１ a first nitride region including N (0<z1≦1, x2<z1), the first nitride region including a first nitride portion, the first nitride portion being between the third portion region and the first electrode portion; a first insulating member including a first insulating portion, the first insulating portion being between the first nitride portion and the first electrode portion; Equipped with the third portion region includes a first surface facing the first nitride portion; the first nitride portion includes a second surface facing the first insulating portion; a peak concentration of chlorine in the first surface, the second surface, and a region including the first nitride portion satisfies at least one of a first condition and a second condition; Under the first condition, the peak concentration is 2.1×10 in GaN quantification. １６ cm －３ 6.72 x 10 １６ cm －３ is as follows: In the second condition, the peak concentration is SiO ２ In the quantitative determination, 1.6 x 10 １７ cm －３ 3.87 x 10 １７ cm －３ The semiconductor device is as follows:

6. the first insulating portion includes a second location; 6. The semiconductor device according to claim 3, wherein the hydrogen concentration at the second position is higher than the hydrogen concentration at the first surface.

7. 7. The semiconductor device according to claim 6, wherein the hydrogen concentration in the second surface is between the hydrogen concentration at the second position and the hydrogen concentration in the first surface.

8. the concentration of hydrogen in the portion including the first insulating portion, the first nitride portion, and the third portion region peaks at the second position; The hydrogen concentration at the second position is 6.0×10 １８ cm －３ 1.70 x 10 ２１ cm －３ 7. The semiconductor device according to claim 6, wherein:

9. The hydrogen concentration on the first surface is 4.0×10 １７ cm －３ The above is 8.7 x 10 １８ cm －３ 7. The semiconductor device according to claim 6, wherein:

10. The semiconductor device according to claim 1 , wherein the first nitride portion is located between the fourth partial region and the fifth partial region in the first direction.

11. The semiconductor device according to claim 1 , wherein the first insulating portion is located between the fourth partial region and the fifth partial region in the first direction.

12. The semiconductor device according to claim 1 , wherein at least a portion of the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the first direction.

13. The x1 is 0 or more and 0.1 or less, x2 is equal to or greater than 0.13 and equal to or less than 0.25, 2. The semiconductor device according to claim 1, wherein said z1 is equal to or greater than 0.8 and equal to or less than 1.

14. The semiconductor device according to claim 1 , wherein the thickness of said first nitride portion along said second direction is not less than 1 nm and not more than 10 nm.

15. The semiconductor device according to claim 1 , wherein the thickness of said first insulating portion along said second direction is not less than 20 nm and not more than 40 nm.

16. the first nitride region further includes a second nitride portion and a third nitride portion; the second nitride portion is between the first semiconductor portion and the first electrode portion in the first direction; The semiconductor device according to claim 1 , wherein the third nitride portion is located between the first electrode portion and the second semiconductor portion in the first direction.

17. further comprising a second insulating member; the second insulating member includes a first insulating region and a second insulating region, the first nitride region further includes a fourth nitride portion and a fifth nitride portion; the first insulating region is between the first semiconductor portion and the fourth nitride portion; The semiconductor device of claim 1 , wherein the second insulating region is between the second semiconductor portion and the fifth nitride portion.

18. Al ｘ１ Ga １－ｘ１ a first semiconductor layer containing N (0≦x1<1); and ｘ２ Ga １－ｘ２ a second semiconductor layer including N (0<x2<1, x1<x2), and forming a recess by removing a portion of the second semiconductor layer of the structure including the first semiconductor layer, and exposing a portion of the first semiconductor layer at a bottom of the recess; treating the exposed portion of the first semiconductor layer with a gas containing at least one element selected from the group consisting of Ar, He, Ne, and Kr; Al on the portion of the first semiconductor layer of the processed structure. ｚ１ Ga １－ｚ１ forming a first nitride region including N (0<z1≦1, x2<z1); forming a first insulating member over the first nitride region; a third electrode is formed by embedding a conductive member on top of a first insulating member in the remaining space of the recess, and a first electrode is electrically connected to a portion of the second semiconductor layer, and a second electrode is electrically connected to another portion of the second semiconductor layer, and at least a portion of the third electrode is located between the first electrode and the second electrode.

19. 20. The method for manufacturing a semiconductor device according to claim 18, wherein said forming of said recess includes a treatment using chlorine.

20. 20. The method of claim 19, wherein the treatment with the gas includes removing a portion of the chlorine remaining in the portion of the exposed first semiconductor layer.

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