Film forming apparatus and film forming method

Abstract

To provide a film deposition apparatus capable of inhibiting raw material powder from scattering to the outside of a processing chamber.SOLUTION: In a film deposition apparatus 1, an aerosol formed by dispersing raw ceramic powder in a carrier gas is ejected toward a processing object surface Ka of a substrate K to form a film on the processing object surface Ka. The film deposition apparatus is equipped with a processing chamber 2 for accommodating the substrate K, a holder 4 installed in the processing chamber 2 for holding the substrate K, an auxiliary chamber 6 communicating with the processing chamber 2 where the substrate K moves in or out of the processing chamber 2, and a transfer mechanism 3 capable of transferring the holder 4 to a retreat position where a communication part 7 between the processing chamber 2 and the auxiliary chamber 6 is not positioned in the same plane as the processing object surface Ka of the substrate K.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a film forming apparatus and a film forming method for forming a film on a substrate. [Background technology]

[0002] A method called aerosol deposition (AD) is a method for forming a film made of a metal oxide material on a substrate without undergoing high-temperature heat treatment such as sintering. In this AD method, raw material powder made of fine particles such as metal oxide is sprayed from a nozzle toward a substrate such as ceramics or plastic at approximately the speed of sound, and the energy released when the raw material powder collides with the substrate causes the fine particles to fracture and deform, forming a dense film on the substrate.

[0003] Many AD deposition systems have been proposed that use a so-called batch process. In batch deposition systems, the substrate must be replaced after each deposition process, which requires restoring pressure to the processing chamber. This lengthens the processing time required to form a desired film on a single substrate, making mass production impractical.

[0004] In order to shorten the actual process time using a batch-type film formation apparatus, a work chamber for carrying substrates into and out of the film formation apparatus is required, separate from the processing chamber. As a film formation apparatus equipped with such a work chamber, for example, a film formation apparatus described in Patent Document 1 has been proposed.

[0005] The film forming apparatus described in Patent Document 1 includes a film forming chamber for forming a film, a measurement chamber connected to the film forming chamber and provided with a substrate loading / unloading port, an intermediate chamber provided between the film forming chamber and the measurement chamber, a conveyor disposed in the intermediate chamber for transporting substrates between the film forming chamber and the measurement chamber, and a blocking section for blocking the film forming chamber from the measurement chamber.

[0006] According to this film forming apparatus, when the loading / unloading port of the measurement chamber is opened to load / unload the substrate, the blocking unit blocks the film formation chamber from the measurement chamber. This makes it possible to maintain a reduced pressure inside the film formation chamber even when the measurement chamber becomes atmospheric pressure due to the opening of the loading / unloading port. Furthermore, because the blocking unit can block the film formation chamber from the measurement chamber, it is possible to prevent raw material powder scattered inside the film formation chamber during the film formation process from entering the measurement chamber. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-84926 Summary of the Invention [Problem to be solved by the invention]

[0008] In the AD method, only a few percent of the raw material powder injected toward the substrate is used to form a film, and the majority is not used to form a film. After colliding with the substrate, the raw material powder that is not used to form a film is scattered at high speed along the surface of the substrate to be treated.

[0009] Therefore, in the film forming apparatus described in Patent Document 1, there is a risk that the raw material powder flying at high speed will enter the intermediate chamber and contaminate the intermediate chamber, or that the raw material powder will accumulate and adhere to the conveyor or the like disposed in the intermediate chamber, resulting in malfunction. Furthermore, if the raw material powder flying at high speed reaches the interrupter, there is a risk that the raw material powder will accumulate and adhere to the interrupter, causing malfunction of the interrupter.

[0010] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a film forming apparatus and a film forming method that can suppress scattering of raw material powder outside a processing chamber. [Means for solving the problem]

[0011] The film forming apparatus according to the present invention for achieving the above object has the following characteristic configuration: 1. A film forming apparatus for forming a film on a surface to be treated of a substrate by ejecting an aerosol in which ceramic raw material powder is dispersed in a carrier gas toward the surface to be treated, a processing chamber in which the substrate is disposed; a holder disposed in the processing chamber and configured to hold the substrate; an auxiliary chamber communicating with the treatment chamber and through which the substrate passes between the auxiliary chamber and the treatment chamber; a moving mechanism that can move the holding part to a retracted position where the communication part between the processing chamber and the auxiliary chamber is not located in the same plane as the surface of the substrate to be processed.

[0012] Furthermore, the film forming method according to the present invention for achieving the above object is characterized by the following configuration: 1. A film forming method comprising: spraying an aerosol, in which ceramic raw material powder is dispersed in a carrier gas, toward a surface of a substrate to be treated, thereby forming a film on the surface to be treated, the method comprising: The aerosol is sprayed toward the surface to be treated while a holding part disposed within the treatment chamber is moved to a retracted position in the same plane as the surface to be treated of the substrate held by the holding part, where a communication part between the treatment chamber and an auxiliary chamber through which the substrate enters and exits between the treatment chamber and the treatment chamber is not located.

[0013] When an aerosol is sprayed onto a substrate with the communication portion between the processing chamber and the auxiliary chamber located in the same plane as the processing surface of the substrate, the aerosol that collides with the processing surface flows at high speed along the processing surface and reaches the communication portion. As a result, the raw material powder contained in the aerosol scatters at high speed toward the communication portion, resulting in the raw material powder entering the auxiliary chamber. However, with the above-described characteristic configuration, the aerosol can be sprayed onto the processing surface of the substrate with the holding unit moved to the retracted position by the movement mechanism. This makes it difficult for the aerosol that collides with the processing surface to reach the communication portion, and the raw material powder is less likely to scatter toward the communication portion. Therefore, with the above-described characteristic configuration, it is possible to prevent the raw material powder from entering the auxiliary chamber (in other words, scattering outside the processing chamber).

[0014] Further characteristic features of the film forming apparatus according to the present invention are as follows: The present invention is characterized in that it includes a gas injection mechanism that injects a shielding gas that prevents the ceramic raw material powder from entering the auxiliary chamber through the communication portion.

[0015] Further, a further characteristic configuration of the film forming method according to the present invention is as follows: The aerosol is sprayed toward the surface to be treated while a shielding gas is sprayed to prevent the ceramic raw material powder from entering the auxiliary chamber via the communication part.

[0016] According to the above-described characteristic configuration, the shielding gas can prevent the ceramic raw material powder from entering the auxiliary chamber, thereby further suppressing the raw material powder from scattering outside the processing chamber.

[0017] Further characteristic features of the film forming apparatus according to the present invention are as follows: The gas injection mechanism injects the shielding gas in a direction intersecting the substrate entry and exit direction.

[0018] Further, a further characteristic configuration of the film forming method according to the present invention is as follows: The aerosol is sprayed toward the surface to be treated while the shielding gas is sprayed in a direction intersecting the direction in which the substrate enters and exits.

[0019] According to the above-described characteristic configuration, the injection direction of the shielding gas intersects with the direction in which the substrate enters and exits, which makes it less likely that the injected shielding gas will cause the raw material powder to invade the pre-chamber, thereby further suppressing the raw material powder from scattering outside the processing chamber.

[0020] Further characteristic features of the film forming apparatus according to the present invention are as follows: The communicating portion is provided with a blocking mechanism for airtightly blocking the processing chamber from the auxiliary chamber.

[0021] Further, a further characteristic configuration of the film forming method according to the present invention is as follows: The aerosol is sprayed toward the surface to be treated while the processing chamber and the sub-chamber are airtightly isolated from each other at the communication part.

[0022] According to the above-described characteristic configuration, scattering of raw material powder from the processing chamber to the auxiliary chamber can be further suppressed. In addition, since the processing chamber and the auxiliary chamber are sealed off in an airtight manner, it is possible to perform a film formation process by reducing the pressure inside the processing chamber while simultaneously performing an operation to restore atmospheric pressure inside the auxiliary chamber.

[0023] Further characteristic features of the film forming apparatus and film forming method according to the present invention are as follows: At the retracted position, the surface of the substrate held by the holder opposite to the surface to be processed faces the side of the processing chamber where the communication portion is present.

[0024] According to the above-described characteristic configuration, the surface to be treated is farther away from the communicating part, so that the aerosol that has collided with the surface to be treated is less likely to reach the communicating part, and the raw material powder is less likely to scatter toward the communicating part, thereby suppressing the intrusion of the raw material powder into the pre-chamber.

[0025] Further characteristic features of the film forming apparatus according to the present invention are as follows: The present invention is characterized in that a transport mechanism is provided that transports the substrate between the processing chamber and the auxiliary chamber by utilizing a magnetic attraction means.

[0026] Further, a further characteristic configuration of the film forming method according to the present invention is as follows: The substrate is transported between the processing chamber and the auxiliary chamber by utilizing magnetic attraction.

[0027] The magnetic attraction means can be realized with a relatively simple structure using an electromagnet, etc. Therefore, according to the above characteristic configuration, it is possible to transport the substrate between the processing chamber and the auxiliary chamber without requiring a complex structure.

[0028] Further characteristic features of the film forming apparatus according to the present invention are as follows: The transport mechanism includes: an arm having the magnetic attraction means and disposed in each of the processing chamber and the auxiliary chamber; a substrate holder that is detachably attached to the arm by the magnetic attraction means and that holds the substrate; and a positional deviation prevention mechanism for preventing the substrate holder from being displaced relative to the arm.

[0029] A further characteristic configuration of the film forming method according to the present invention is as follows: The substrate holder holding the substrate is transferred between arms respectively arranged in the processing chamber and the auxiliary chamber by utilizing the magnetic attraction while preventing misalignment between the arms and the substrate holder, thereby transporting the substrate between the processing chamber and the auxiliary chamber.

[0030] According to the above characteristic configuration, misalignment between the arm and the substrate holder is prevented, and therefore the substrate is transported stably.

[0031] Further characteristic features of the film forming apparatus according to the present invention are as follows: The communicating section is provided with a sliding door that moves in a plane perpendicular to the transport direction of the substrate and abuts against the inner wall of the auxiliary chamber to airtightly separate the processing chamber from the auxiliary chamber.

[0032] Further, a further characteristic configuration of the film forming method according to the present invention is as follows: In the communication section, a sliding door is moved in a plane perpendicular to the transport direction of the substrate and abutted against the inner wall of the auxiliary chamber, thereby airtightly isolating the treatment chamber from the auxiliary chamber, and the aerosol is sprayed toward the surface to be treated.

[0033] According to the above-described characteristic configuration, scattering of raw material powder from the processing chamber to the auxiliary chamber can be further suppressed. In addition, since the processing chamber and the auxiliary chamber are sealed off in an airtight manner, for example, it is possible to perform a film formation process by reducing the pressure inside the processing chamber while simultaneously performing an operation to restore atmospheric pressure inside the auxiliary chamber.

[0034] Further characteristic features of the film forming apparatus according to the present invention are as follows: The sliding door is provided with a pressing mechanism that applies a force to the sliding door to press it against the inner wall of the sub-chamber.

[0035] Further, a further characteristic configuration of the film forming method according to the present invention is as follows: The aerosol is sprayed toward the surface to be treated while a force is applied to the sliding door to press the sliding door against the inner wall of the auxiliary chamber.

[0036] According to the above-described characteristic configuration, a gap is less likely to occur between the sliding door and the interior wall of the auxiliary chamber, and the processing chamber and the auxiliary chamber can be more appropriately isolated from each other.

[0037] Further characteristic features of the film forming apparatus according to the present invention are as follows: a pressure adjusting mechanism capable of individually adjusting the pressures in the processing chamber and the auxiliary chamber; The pressure adjustment mechanism is capable of adjusting the pressure in the auxiliary chamber to be higher than the pressure in the processing chamber.

[0038] Further, a further characteristic configuration of the film forming method according to the present invention is as follows: The pressure in the auxiliary chamber is set higher than the pressure in the processing chamber.

[0039] According to the above-described characteristic configuration, when the sliding door is moved to open the communication part in order to transport the substrate from the auxiliary chamber to the treatment chamber or from the treatment chamber to the auxiliary chamber, scattering of raw material powder from the treatment chamber to the auxiliary chamber can be suppressed.

[0040] Further characteristic features of the film forming apparatus according to the present invention are as follows: The auxiliary chambers include a substrate introduction chamber in which the substrate to be carried into the processing chamber is accommodated, and a substrate removal chamber in which the substrate to be carried out of the processing chamber is accommodated.

[0041] Further, a further characteristic configuration of the film forming method according to the present invention is as follows: The substrate is carried into the treatment chamber from a substrate introduction chamber serving as the auxiliary chamber, and the substrate is carried out from the treatment chamber to a substrate removal chamber serving as the auxiliary chamber.

[0042] For example, when a film formation apparatus includes only a processing chamber, processing multiple substrates requires loading the substrates into the processing chamber, depressurizing the processing chamber to the pressure required for the film formation process, and then processing the substrates. To remove the processed substrates, the processing chamber must be restored to atmospheric pressure, after which the processed substrates are removed from the processing chamber, and the next substrate to be processed must be loaded into the processing chamber. That is, when a film formation apparatus includes only a processing chamber, time is required to depressurize and restore the pressure in the processing chamber each time a substrate is processed. However, according to the above-described characteristic configuration, multiple substrates can be accommodated in the substrate processing chamber by first storing multiple substrates in the substrate introduction chamber, sequentially loading the substrates into the processing chamber, performing the film formation process, and sequentially unloading the processed substrates into the substrate unloading chamber. Therefore, according to the above-described characteristic configuration, after storing multiple substrates in the substrate introduction chamber, the pressure in the substrate introduction chamber, the processing chamber, and the substrate unloading chamber can be adjusted to the same pressure as the pressure required for the film formation process. This allows multiple substrates to be processed continuously without requiring large-scale pressure adjustments such as depressurizing and restoring the pressure in the processing chamber, or by simply performing pressure adjustments that can be performed in a short time. [Brief explanation of the drawings]

[0043] [Figure 1] 1 is a diagram showing a schematic configuration of a film forming apparatus according to a first embodiment. [Figure 2] 1 is a diagram showing a schematic configuration of a film forming apparatus according to a first embodiment. [Figure 3] 10A and 10B are diagrams illustrating a problem that occurs when the position of the holding part is not the retracted position. [Figure 4] FIG. 10 is a diagram showing a schematic configuration of a film forming apparatus according to a second embodiment. [Figure 5] FIG. 10 is a diagram showing a schematic configuration of a film forming apparatus according to a second embodiment. [Figure 6] FIG. [Figure 7] FIG. [Figure 8] FIG. 2 is a top view showing the substrate holder. [Figure 9] 10A to 10C are diagrams showing a substrate transfer process. [Figure 10] 10A to 10C are diagrams showing a substrate transfer process. DETAILED DESCRIPTION OF THE INVENTION

[0044] A film forming apparatus and a film forming method according to an embodiment of the present invention will be described below with reference to the drawings. In the following description, the terms "upper" and "lower" refer to the upper and lower sides in the drawings.

[0045] [Regarding the film forming apparatus according to the first embodiment] 1 and 2, a film forming apparatus 1 according to this embodiment is an apparatus that sprays an aerosol, in which ceramic raw material powder is dispersed in a carrier gas, toward a processing target surface Ka of a substrate K to form a film on the substrate K, and is equipped with a processing chamber 2 in which the substrate K is disposed, a holding unit 4 disposed within the processing chamber 2 and that holds the substrate K, an auxiliary chamber 6 that communicates with the processing chamber 2 and through which the substrate K passes between the processing chamber 2, and a movement mechanism 3 that can move the holding unit 4 to a retracted position where a communication unit 7 between the processing chamber 2 and the auxiliary chamber 6 is not located in the same plane as the processing target surface Ka of the substrate K. Note that FIG. 1 shows a state in which the holding unit 4 is located at the transport position, and FIG. 2 shows a state in which the holding unit 4 is located at the retracted position.

[0046] In this embodiment, the film forming apparatus 1 also includes a transport mechanism 8 that transports the substrate K between the processing chamber 2 and the auxiliary chamber 6, a gas injection mechanism 10 that ejects a shielding gas that prevents the ceramic raw material powder from entering the auxiliary chamber 6 through the communication part 7, an aerosol generation part 15 that generates an aerosol in which the ceramic raw material powder is dispersed in a gas, an aerosol transport pipe 5 that ejects the aerosol from the ejection tip 5 a, a carrier gas delivery mechanism 18 that delivers a carrier gas to the aerosol generation part 15, a raw material powder supply mechanism 16 that delivers the ceramic raw material powder to the aerosol generation part 15, and a blocking mechanism 9 that airtightly isolates the processing chamber 2 from the auxiliary chamber 6.

[0047] The processing chamber 2 is composed of a rectangular or roughly cylindrical airtight housing with closed top and bottom ends, with an opening 2a formed on the top surface and an opening 2b formed on the side. Inside the processing chamber 2, a nozzle 11 of a gas injection mechanism 10, a holder 4 for holding the substrate K, and an aerosol transfer pipe 5 are disposed. Furthermore, a mechanical booster pump P1 and a vacuum pump P2 serving as exhaust equipment are connected to the opening 2a of the processing chamber 2 via an exhaust pipe S1. The mechanical booster pump P1 and the vacuum pump P2 exhaust gas, thereby reducing the pressure inside the processing chamber 2 to a predetermined pressure (e.g., about 1.0 kPa) or less. In this example, the inner surface of the processing chamber 2 refers to the inner circumferential surface of the housing.

[0048] The holding unit 4 is configured to be able to hold the substrate K, which is the target of the film formation process, with the processing target surface Ka facing downward so that the processing target surface Ka is parallel to the horizontal plane. Methods for holding the substrate K include a method of vacuum-attracting the surface of the substrate K opposite the processing target surface Ka, a method of applying a voltage and attracting the substrate K by Coulomb force generated between an electrode and the substrate K (so-called electrostatic chuck), and a method of attracting the substrate K by an electromagnet if the substrate K is magnetic.

[0049] The moving mechanism 3 is composed of a horizontal drive mechanism including a stepping motor, a ball screw, etc., and an elevation drive mechanism including a hydraulic cylinder, etc. The horizontal drive mechanism moves the holding unit 4 horizontally, and the elevation drive mechanism moves the holding unit 4 vertically. As shown in FIG. 1, the moving mechanism 3 moves the holding unit 4 to a transfer position when transferring the substrate K between the auxiliary chamber 6 and the processing chamber 2. As shown in FIG. 2, when performing a film formation process on the substrate K, the moving mechanism 3 moves the holding unit 4 to a retracted position below the transfer position, so that the processing target surface Ka is positioned below the opening 2b. Note that while FIG. 1 shows the moving mechanism 3 disposed outside the processing chamber 2, the moving mechanism 3 may also be disposed inside the processing chamber 2. The elevation drive mechanism may also be a mechanism including a stepping motor, a ball screw, etc.

[0050] 3, when the film formation process is performed with the holder 4 not moved to the retracted position (i.e., when the film formation process is performed with the communication part 7 between the processing chamber 2 and the auxiliary chamber 6 located in the same plane as the processing target surface Ka of the substrate K), the aerosol that collides with the processing target surface Ka flows at high speed along the processing target surface Ka and reaches the communication part 7. In other words, unused ceramic raw material powder contained in the aerosol is scattered at high speed toward the communication part 7 and may accumulate or adhere to the blocking mechanism 9, causing malfunction. Furthermore, if the blocking mechanism 9 is not provided, unused ceramic raw material powder may enter the auxiliary chamber 6.

[0051] In the film formation apparatus 1 according to this embodiment, the holding unit 4 is moved to the retracted position when performing the film formation process. This makes it difficult for the aerosol that collides with the surface Ka to be processed to reach the communication part 7, and therefore it is difficult for unused ceramic raw material powder to scatter into the communication part 7. Therefore, in the film formation apparatus 1, it is difficult for unused ceramic raw material powder to enter the auxiliary chamber 6 during the film formation process, and it is also difficult for unused ceramic raw material powder to accumulate and adhere to the blocking mechanism 9.

[0052] The auxiliary chamber 6 is connected to the processing chamber 2 at a location where the opening 2b is formed, and is configured by a housing having a smaller volume than the housing that configures the processing chamber 2. The auxiliary chamber 6 is formed with a loading / unloading port 6a for loading / unloading the substrate K and an opening 6b to which a vacuum pump P3 is connected. The loading / unloading entrance 6a is opened and closed by a sliding door 6c. A transfer mechanism 8 is provided inside the auxiliary chamber 6. The pressure inside the auxiliary chamber 6 is reduced to approximately the same pressure as the pressure inside the processing chamber 2 during the film formation process by discharging gas using a vacuum pump P3. The pressure inside the auxiliary chamber 6 may be adjusted by connecting a mechanical booster pump P1 or a vacuum pump P2 instead of the vacuum pump P3.

[0053] The transfer mechanism 8 is disposed in the auxiliary chamber 6. In this embodiment, the transfer mechanism 8 is a so-called transfer robot, and although not shown, includes a hand unit that sucks and holds the substrate K, an arm unit that moves the hand unit forward and backward, and the like. The transfer mechanism 8 transfers the substrate K between the auxiliary chamber 6 and the processing chamber 2 by transferring the substrate K sucked and held by the hand unit to the holder 4, and by receiving the substrate K held by the holder 4 with the hand unit.

[0054] In this embodiment, the blocking mechanism 9 is composed of a sliding door that can airtightly close the opening 2b of the processing chamber 2 and a drive mechanism for driving the door. When the sliding door closes the opening 2b of the processing chamber 2, the processing chamber 2 and the auxiliary chamber 6 are airtightly blocked from each other. Therefore, by closing the opening 2b of the processing chamber 2 with the blocking mechanism 9 during the film formation process, it is possible to prevent unused ceramic raw material powder from scattering from the processing chamber 2 to the auxiliary chamber 6. Furthermore, because the processing chamber 2 and the auxiliary chamber 6 are airtightly blocked from each other, it is possible to reduce the pressure inside the processing chamber 2 and perform the film formation process while simultaneously performing an operation such as carrying in the substrate K to be used for the next film formation process into the auxiliary chamber 6 (an operation that returns the pressure inside the auxiliary chamber 6 to atmospheric pressure).

[0055] The aerosol transfer pipe 5 is a cylindrical straight pipe member. The aerosol transfer pipe 5 is disposed in the processing chamber 2 so that the ejection tip 5a faces the holder 4 in the processing chamber 2, and the end opposite the ejection tip 5a is connected to the aerosol generating unit 15. With this aerosol transfer pipe 5, the aerosol delivered from the aerosol generating unit 15 is ejected from the ejection tip 5a toward the processing target surface Ka of the substrate K; in other words, the aerosol is sprayed from below in the vertical direction toward the processing target surface Ka. The cross-sectional shape of the ejection tip 5a is not limited to a circle, but may be an ellipse or a polygon such as a triangle or a rectangle.

[0056] The gas injection mechanism 10 includes a nozzle 11, an air supply unit 12, an air flow rate control unit 13, and an air supply pipe S2. In this embodiment, air is used as the injected shielding gas, but the present invention is not limited to this.

[0057] In this embodiment, the nozzle 11 is made of a box-shaped member whose outer peripheral surface can be fitted tightly against the inner surface of the processing chamber 2, and has a slit-shaped air outlet 11a formed on its bottom surface, extending in a direction parallel to the inner surface of the processing chamber 2. The nozzle 11 is also arranged at the top of the processing chamber 2 above the opening 2b so that air is sprayed from the air outlet 11a vertically downward and along the opening surface of the opening 2b, and the direction of air spraying is approximately perpendicular to the direction of transport (in and out) of the substrate K by the transport mechanism 8, making it difficult for the sprayed air to enter the auxiliary chamber 6. This effectively prevents unused ceramic raw material powder from entering the auxiliary chamber 6.

[0058] An air supply pipe S2, one end of which is connected to the nozzle 11, is connected to the air supply unit 12, and the air supply unit 12 supplies air into the air supply pipe S2 using a compressor or a gas cylinder.

[0059] The air supply pipe S2 is for supplying air supplied from the air supply unit 12 to the nozzle 11. In this embodiment, the air supplied from the air supply unit 12 is supplied to the nozzle 11 via the air flow control unit 13, and the air supply pipe S2 is made up of a plurality of pipes connected between the air supply unit 12, the air flow control unit 13, and the nozzle 11.

[0060] The air flow rate control unit 13 controls the flow rate of air flowing through the air supply pipe S2. In this embodiment, the operation is appropriately controlled by a control device (not shown) so that air is ejected from the outlet 11a of the nozzle 11 at a predetermined flow rate (10 L / min in this example).

[0061] In this embodiment, a raw material supply pipe S3, which will be described later, is connected to the aerosol generation unit 15. Also, a carrier gas delivery pipe S4 and an aerosol transfer pipe 5, which will be described later, are connected to the aerosol generation unit 15. The aerosol generation unit 15 generates an aerosol by mixing ceramic raw material powder, which is supplied at a constant speed by a raw material powder supply mechanism 16, with a carrier gas, which is delivered by a carrier gas delivery mechanism 18. The generated aerosol is delivered to the aerosol transfer pipe 5.

[0062] The raw material powder supply mechanism 16 includes a raw material powder supply unit 17 and a raw material supply pipe S3. Ceramic raw material powder is stored in the raw material powder supply unit 17, and this ceramic raw material powder is supplied to the aerosol generating unit 15 through the raw material supply pipe S3. The particles constituting the ceramic raw material powder are, for example, particles of stabilized zirconia containing yttrium, calcium, magnesium, hafnium, or the like in zirconia. In this embodiment, yttrium-containing zirconia (YSZ) is used as the ceramic raw material powder.

[0063] The carrier gas delivery mechanism 18 includes a gas supply unit 19, a carrier gas pressure control unit 20, a carrier gas flow rate control unit 21, a carrier gas delivery pipe S4, and the like.

[0064] Specifically, a carrier gas supply pipe S4 is connected to the gas supply unit 19, and the gas supply unit 19 supplies a carrier gas such as air, N2, He, or Ar into the carrier gas supply pipe S4 using a compressor or a gas cylinder.

[0065] Furthermore, in this embodiment, carrier gas delivery pipe S4 is used to deliver carrier gas supplied from gas supply unit 19 to aerosol generation unit 15. Specifically, in this embodiment, the carrier gas delivered from gas supply unit 19 is delivered to aerosol generation unit 15 via carrier gas pressure control unit 20 and carrier gas flow rate control unit 21 in this order, and carrier gas delivery pipe S4 is made up of a plurality of pipes connected among gas supply unit 19, carrier gas pressure control unit 20, carrier gas flow rate control unit 21, and aerosol generation unit 15. Furthermore, a pressure sensor M1 is provided in carrier gas delivery pipe S4 between carrier gas flow rate control unit 21 and aerosol generation unit 15 to detect the pressure inside carrier gas delivery pipe S4.

[0066] The carrier gas pressure control unit 20 stabilizes the carrier gas flowing through the carrier gas supply pipe S4 at an appropriate pressure, and the carrier gas flow rate control unit 21 controls the flow rate of the carrier gas flowing through the carrier gas supply pipe S4. In this embodiment, the operations of the carrier gas pressure control unit 20 and the carrier gas flow rate control unit 21 are appropriately controlled by a control device (not shown) based on the pressure detected by the pressure sensor M1, etc.

[0067] [Regarding the film forming method according to the first embodiment] Next, a process for forming a film (coated body) on the processing target surface Ka of the substrate K by a film formation method using the above-described film formation apparatus 1 will be described. In the film formation method according to this embodiment, the substrate K is carried into the auxiliary chamber 6 with the opening 2b closed by the blocking mechanism 9, and then the pressure inside the auxiliary chamber 6 is reduced to approximately the same pressure as the pressure inside the processing chamber 2 during the film formation process. Thereafter, with the opening 2b open, the substrate K is transported to the holding unit 4 located at the transport position and held by the holding unit 4, and the opening 2b is closed again by the blocking mechanism 9. Next, the holding unit 4 is moved to the retracted position by the moving mechanism 3, and the film formation process on the substrate K begins in this state.

[0068] In the film formation process, first, the carrier gas is fed from the gas supply unit 19 to the aerosol generation unit 15 while the flow rate and pressure of the carrier gas flowing through the carrier gas feed pipe S4 are adjusted by the carrier gas pressure control unit 20 and the carrier gas flow rate control unit 21. In the aerosol generation unit 15, an aerosol is generated, which is a mixture of the fed carrier gas and the ceramic raw material powder fed from the raw material powder supply unit 17. The generated aerosol is fed to the aerosol transfer pipe 5.

[0069] The aerosol supplied to the aerosol transport pipe 5 is sprayed from the ejection end 5a of the aerosol transport pipe 5 toward the surface Ka of the substrate K to be treated (in other words, sprayed from the vertically downward direction toward the surface Ka to be treated), and the sprayed aerosol collides with the surface Ka of the substrate K to be treated, forming a film on the surface Ka to be treated.

[0070] In this film formation method, the holding unit 4 is moved to the retracted position, and the aerosol is sprayed onto the processing target surface Ka of the substrate K. This makes it difficult for the aerosol that collides with the processing target surface Ka to reach the communication part 7, and therefore it is difficult for unused ceramic raw material powder to scatter into the communication part 7. Therefore, in this film formation method, unused ceramic raw material powder is difficult to enter the auxiliary chamber 6 during film formation processing. Furthermore, unused ceramic raw material powder is difficult to accumulate and adhere to the blocking mechanism 9.

[0071] After the film formation process, the moving mechanism 3 moves the holding unit 4 to the transfer position, and the opening 2b is opened. Then, the substrate K is carried out into the auxiliary chamber 6 by the transport mechanism 8, and the opening 2b is closed by the blocking mechanism 9. Thereafter, the processed substrate K is carried out from the auxiliary chamber 6, and an unprocessed substrate K is carried in, and thereafter, the film formation process is performed on the substrate K in the same procedure as above.

[0072] As described above, according to the film forming apparatus 1 and film forming method of this embodiment, unused ceramic raw material powder is less likely to scatter into the communicating portion 7 during the film forming process, thereby preventing unused ceramic raw material powder from scattering outside the processing chamber 2.

[0073] [Regarding the film forming apparatus according to the second embodiment] Next, a film formation apparatus according to a second embodiment of the present invention will be described. The film formation apparatus 30 according to the second embodiment differs from the film formation apparatus 1 according to the first embodiment mainly in that it has two sub-chambers. The following description will be given with reference to the drawings, but detailed description of the same configuration as the film formation apparatus 1 according to the first embodiment will be omitted.

[0074] 4 to 6, the film formation apparatus 30 according to the second embodiment includes a processing chamber 31, a substrate introduction chamber 33 and a substrate removal chamber 36 as auxiliary chambers, a transport mechanism 40, slide doors 48 and 49, a pressing mechanism 50, and a pressure adjustment mechanism 55. Although detailed description will be omitted, the film formation apparatus 30 also includes an aerosol generation unit 15, a carrier gas delivery mechanism 18, and a raw material powder supply mechanism 16, similar to the film formation apparatus 1.

[0075] 4 and 5, the processing chamber 31 of this embodiment is configured as a rectangular parallelepiped, airtight housing with openings 31a and 31b on both side surfaces and an opening 31c on the bottom surface. An aerosol transport pipe 5 is disposed inside the processing chamber 31 with its ejection tip 5a facing upward, and an aerosol generating unit 15 is connected to the end opposite the ejection tip 5a. A hopper H is disposed inside the processing chamber 31 with its lower opening Ha overlapping the opening 31c, and a recovery unit 32 is connected to the opening 31c to recover raw material powder that is generated during the film formation process and not used in film formation.

[0076] As shown in FIGS. 4 and 5 , the substrate introduction chamber 33 communicates with the processing chamber 31, allowing the substrate K to pass between the chamber 31 and the processing chamber 31. The substrate introduction chamber 33 accommodates the substrate K to be loaded into the processing chamber 31. In this embodiment, the substrate introduction chamber 33 is configured as a rectangular, airtight housing with two openings 33a and 33b formed on the back surface and an opening 33c formed on one side surface. The housing constituting the substrate introduction chamber 33 is disposed adjacent to the housing constituting the processing chamber 31 so that the opening 33c overlaps with the opening 31a of the processing chamber 31. The openings 31a and 33c establish communication between the substrate introduction chamber 33 and the processing chamber 31. The openings 31a and 33c form an unloading port 34 for unloading the substrate holder K1 from the substrate introduction chamber 33 to the processing chamber 31. The substrate introduction chamber 33 is also provided with a first holder insertion cassette 35 capable of storing multiple substrate holders K1 with guides to prevent misalignment. The plurality of substrate holders K1 holding unprocessed substrates K are stored in the first holder insertion cassette 35 so that the processing target surfaces Ka of the substrates K face downward. An exhaust pipe S11, which will be described later, is connected to the opening 33a, and an air supply pipe S12, which will be described later, is connected to the opening 33b.

[0077] As shown in FIGS. 4 and 5 , the substrate unloading chamber 36 communicates with the processing chamber 31, allowing the substrate K to pass between the chamber 31 and the processing chamber 31, and accommodates the substrate K unloaded from the processing chamber 31. In this embodiment, the substrate unloading chamber 36 is configured as a rectangular, airtight housing having two openings 36a and 36b formed on the back surface and an opening 36c formed on one side surface. The housing constituting the substrate unloading chamber 36 is disposed adjacent to the housing constituting the processing chamber 31 so that the opening 36c overlaps with the opening 31b of the processing chamber 31, and the substrate unloading chamber 36 and the processing chamber 31 are in communication with each other via the openings 31b and 36c. The openings 31b and 36c form an entrance 37 for loading the substrate holder K1 from the processing chamber 31 into the substrate unloading chamber 36. A second holder insertion cassette 38 is disposed in the substrate removal chamber 36, and the substrate holders K1 holding the processed substrates K carried in from the processing chamber 31 are stored in the second holder insertion cassette 38 with the processing target surfaces Ka of the substrates K facing downward, with guides preventing displacement. An exhaust pipe S11, which will be described later, is connected to the opening 36a, and an air supply pipe S12, which will be described later, is connected to the opening 36b.

[0078] 4 to 8, the transport mechanism 40 transports the substrate K between the processing chamber 31 and the substrate introduction chamber 33 and substrate unloading chamber 36 using a magnetic supply means. Specifically, the transport mechanism 40 includes arms 41, 42, and 43 having magnetic attraction means and disposed in the processing chamber 31, the substrate introduction chamber 33, and the substrate unloading chamber 36, respectively; a substrate holder K1 that can be attached to and detached from the arms 41, 42, and 43 by the magnetic attraction means; and a positional displacement prevention mechanism 45 that prevents the substrate holder K1 from shifting relative to the arms 41, 42, and 43. Note that, hereinafter, the arm 41 disposed in the substrate introduction chamber 33 will also be referred to as the "first arm 41," the arm 42 disposed in the processing chamber 31 as the "second arm 42," and the arm 43 disposed in the substrate unloading chamber 36 as the "third arm 43."

[0079] Electromagnets 41a, 42a, 43a are attached to the tips of the arms 41, 42, 43 as magnetic attraction means, and two protrusions 41b, 42b, 43b are formed around the electromagnets 41a, 42a, 43a, respectively. Current can be supplied to the electromagnets 41a, 42a, 43a of the arms 41, 42, 43 by current supply means (not shown), and the generation of attraction force can be controlled by controlling the current supply.

[0080] In this embodiment, the first and third arms 41, 43 are biaxially movable arms, configured to be movable in the X and Y directions, as shown in Fig. 4. In contrast, the second arm 42 is a triaxially movable arm, configured to be movable in the Z direction as well as the X and Y directions, as shown in Figs. 4 and 5. That is, in this embodiment, the arm 42 disposed in the processing chamber 31 also functions as a movement mechanism. The movement of each arm 41, 42, 43 in each direction is achieved by a horizontal drive mechanism and an elevation drive mechanism (not shown).

[0081] 7 and 8, the substrate holder K1 is an aluminum, flat-plate member having a substantially square shape in a plan view, and a rubber magnet K2 capable of attracting the substrate K is attached to its underside. The substrate K is held by the substrate holder K1 via the rubber magnet K2, with the surface opposite to the processing target surface Ka facing the underside of the substrate holder K1. Furthermore, on the upper surface of the substrate holder K1, three attraction portions K3, K4, and K5, each of which is an embedded stainless steel disk-shaped member that can be magnetically attracted by the electromagnets 41a, 42a, and 43a, are provided at equal intervals approximately in the center between two opposing sides of the substrate holder K1. Furthermore, recesses K6, K7, and K8 corresponding to the two protrusions 41b, 42b, and 43b formed on each arm 41, 42, and 43 are formed around each attraction portion K3, K4, and K5. Furthermore, when the substrate holder K1 is stored in the holder insertion cassette 35, 38, the processing surface Ka of the substrate K held by the substrate holder K1 comes into contact with the substrate holder K1 below, so protrusions are provided on the four corners of the lower surface of the substrate holder K1.

[0082] In this embodiment, the misalignment prevention mechanism 45 is composed of two protrusions 41b, 42b, and 43b formed on each arm 41, 42, and 43, and recesses K6, K7, and K8 formed on the substrate holder K1. According to the misalignment prevention mechanism 45 of this embodiment, as shown in Fig. 6, when the electromagnets 41a, 42a, and 43a of the arms 41, 42, and 43 are attracted to the attraction portions K3, K4, and K5 of the substrate holder K1, the protrusions 41b, 42b, and 43b of the arms 41, 42, and 43 fit into the recesses K6, K7, and K8 of the substrate holder K1, thereby preventing misalignment of the substrate holder K1 with respect to the arms 41, 42, and 43.

[0083] In this transport mechanism 40, the current supply to the electromagnets 41a, 42a, 43a is controlled to control the generation of the adhesive force, and the substrate holder K1 (substrate K held by the substrate holder K1) is transported from the substrate introduction chamber 33 to the processing chamber 31, and from the processing chamber 31 to the substrate removal chamber 36 by repeatedly moving each arm 41, 42, 43 and attaching and detaching the substrate holder K1 to each arm 41, 42, 43.

[0084] 9, the first arm 41 is brought close to the second arm 42 with the electromagnet 41a of the first arm 41 attracted to the attracting portion K3, and as shown in FIG. 10, the electromagnet 42a of the second arm 42 is brought close to the attracting portion K4 and attracted thereto, and then the electromagnet 41a of the first arm 41 is detached from the attracting portion K3, and the substrate holder K1 (substrate K held by the substrate holder K1) is transferred from the first arm 41 to the second arm 42, thereby transporting the substrate K from the substrate introduction chamber 33 to the processing chamber 31. In this embodiment, the substrate holder K1 in the state handed over to the second arm 42 corresponds to the holder.

[0085] In addition, in this embodiment, the second arm 42 is brought close to the third arm 43 while the electromagnet 42a of the second arm 42 is attracted to the attraction portion K4, and after the electromagnet 43a of the third arm 43 is attracted to the attraction portion K5, the electromagnet 42a of the second arm 42 is detached from the attraction portion K4, and the substrate holder K1 (the substrate K held by the substrate holder K1) is transferred from the second arm 42 to the third arm 43, thereby transporting the substrate K from the processing chamber 31 to the substrate removal chamber 36.

[0086] As described above, in the transport mechanism 40 of this embodiment, a magnetic adsorption means with a relatively simple structure using an electromagnet is used as a means for attaching and detaching the substrate holder K1, so that the substrate K can be transported between the processing chamber 31 and the substrate introduction chamber 33 and substrate removal chamber 36 without requiring a complex structure for grasping the substrate K or the substrate holder K1.

[0087] 4 and 5 , the sliding doors 48, 49 move in a plane perpendicular to the transport direction of the substrate K (transport direction of the substrate holder K1) and abut against the inner walls of the substrate introduction chamber 33 and the substrate unloading chamber 36, airtightly isolating the processing chamber 31 from the substrate introduction chamber 33 and the substrate unloading chamber 36. Specifically, the film forming apparatus 30 of this embodiment includes a first sliding door 48 disposed in the substrate introduction chamber 33 and capable of airtightly closing the unloading opening 34, and a second sliding door 49 disposed in the substrate unloading chamber 36 and capable of airtightly closing the loading opening 37. When the first sliding door 48 closes the unloading opening 34, the processing chamber 31 and the substrate introduction chamber 33 are airtightly isolated from each other, and when the second sliding door 49 closes the loading opening 37, the processing chamber 31 and the substrate unloading chamber 36 are airtightly isolated from each other. The first and second sliding doors 48, 49 are configured to move in the vertical direction (X direction) by a drive mechanism (not shown). O-rings 48a, 49a are attached to the surface of the first sliding door 48 opposite to the surface facing the inner wall of the substrate introduction chamber 33, and to the surface of the second sliding door 49 opposite to the surface facing the inner wall of the substrate removal chamber 36.

[0088] As shown in FIGS. 4 and 5 , the pressing mechanism 50 applies a force to the first and second sliding doors 48, 49 to press the sliding doors 48, 49 against the inner walls of the substrate introduction chamber 33 and the substrate unloading chamber 36, respectively. The pressing mechanism 50 of this embodiment is comprised of first and second pressing body pairs 51, 52 and a drive mechanism (not shown) for driving them. The first and second pressing body pairs 51, 52 each comprise a pair of pressing bodies 51 a, 52 a that are L-shaped in top view. The first pressing body pair 51 is disposed in the substrate introduction chamber 33 such that the two pressing bodies 51 a sandwich the unloading port 34 (opening 33 c) in the Z direction. The second pressing body pair 52 is disposed in the substrate unloading chamber 36 such that the two pressing bodies 52 a sandwich the loading entrance 37 (opening 36 c) in the Z direction. Each of the pressing bodies 51a, 52a is attached to the inner wall of the substrate introduction chamber 33 or the substrate removal chamber 36 so as to be able to swing freely around a vertical axis passing through one end of the L-shape.

[0089] According to this pressing mechanism 50, each pressing body 51a of the first pressing body pair 51 is driven to press against the surface of the first sliding door 48 opposite to the surface facing the inner wall of the substrate introduction chamber 33, thereby applying a predetermined pressing force to the first sliding door 48. Also, each pressing body 52a of the second pressing body pair 52 is driven to press against the surface of the second sliding door 49 opposite to the surface facing the inner wall of the substrate removal chamber 36, thereby applying a predetermined pressing force to the second sliding door 49.

[0090] In this way, by providing the pressing mechanism 50, gaps are less likely to occur between the sliding doors 48, 49 and the inner walls of the substrate introduction chamber 33 and the substrate removal chamber 36, and the processing chamber 31 can be more appropriately isolated from the substrate introduction chamber 33 and the substrate removal chamber 36.

[0091] The pressure adjustment mechanism 55 is configured to be able to individually adjust the pressures within the processing chamber 31, the substrate introduction chamber 33, and the substrate unloading chamber 36. As shown in FIGS. 4 and 5, the pressure adjustment mechanism 55 of this embodiment is configured with an exhaust means 56 that exhausts air from the chamber and an air supply means 61 that supplies air into the chamber. The exhaust means 56 is connected to the substrate introduction chamber 33 and the substrate unloading chamber 36 by an exhaust pipe S11, and is configured with an exhaust pump 57 (a vacuum pump or a mechanical booster pump) connected to the recovery unit 32, and on-off valves 58, 59, and 60 installed in the exhaust pipe S11. On the other hand, the air supply means 61 is configured with an air supply means 62 (a compressor or an air cylinder) connected to the substrate introduction chamber 33 and the substrate unloading chamber 36 by an air supply pipe S12, and air flow rate control units 63 and 64 installed in the air supply pipe S12.

[0092] In this pressure adjustment mechanism 55, by opening the on-off valves 58, 59, and 60, gas (air) is discharged from the substrate introduction chamber 33 and the substrate unloading chamber 36, and gas (air) is also discharged from the processing chamber 31 via the recovery unit 32, thereby reducing the pressure in these chambers. Meanwhile, by supplying air to the substrate introduction chamber 33 and the substrate unloading chamber 36 while adjusting the flow rate of air in the air supply pipe S12 using the air flow control units 63 and 64, these chambers are pressurized. That is, the pressure adjustment mechanism 55 adjusts the pressure in the processing chamber 31, the substrate introduction chamber 33, and the substrate unloading chamber 36 by adjusting the opening of the on-off valves 58, 59, and 60 and the flow rate of air in the air supply pipe S12.

[0093] With the pressure adjustment mechanism 55, for example, the on-off valves 58, 59, and 60 are fully opened to reduce the pressures in the processing chamber 31, the substrate introduction chamber 33, and the substrate unloading chamber 36 to a predetermined level or lower, and the air flow rate control units 63 and 64 are used to adjust the flow rate of air in the air supply pipe S12, thereby supplying air at a predetermined flow rate to the substrate introduction chamber 33 and the substrate unloading chamber 36, thereby making the pressure in the substrate introduction chamber 33 and the substrate unloading chamber 36 higher than the pressure in the processing chamber 31. In this way, when the pressures in the substrate introduction chamber 33 and the substrate unloading chamber 36 are made higher than the pressure in the processing chamber 31, a force pressing the sliding doors 48 and 49 against the inner walls of the substrate introduction chamber 33 and the substrate unloading chamber 36 can be applied, thereby more appropriately isolating the processing chamber 31 from the substrate introduction chamber 33 and the substrate unloading chamber 36. Furthermore, when the slide doors 48, 49 are moved to open the carry-out port 34 and the carry-in port 37, scattering of raw material powder from the processing chamber 31 into the substrate introduction chamber 33 and the substrate removal chamber 36 is suppressed.

[0094] [Film forming method according to the second embodiment] Next, a film formation method using the film formation apparatus 30 will be described. In the film formation method according to this embodiment, first, a plurality of substrate holders K1 holding unprocessed substrates K are stored in the first holder insertion cassette 35 in the substrate introduction chamber 33. At this time, the first and second sliding doors 48, 49 may open or close the discharge port 34 and the load entrance 37, but in order to prevent dust from entering the processing chamber 31, it is preferable that at least the discharge port 34 be closed.

[0095] Next, the pressure inside the processing chamber 31 is reduced to a predetermined pressure (for example, about 0.5 kPa) required for the film formation process, and the pressure inside the substrate introduction chamber 33 and the substrate removal chamber 36 is reduced to a pressure about several tens of Pa higher than that inside the processing chamber 31. This prevents the raw material powder from scattering from the processing chamber 31 to the substrate introduction chamber 33 when the first sliding door 48 is moved to open the discharge port 34 in a later step.

[0096] Thereafter, the first arm 41 is brought close to the substrate holder K1 stored in the first holder insertion cassette 35, the substrate holder K1 is sucked and held by the first arm 41, and the substrate holder K1 is removed from the first holder insertion cassette 35. Next, the first sliding door 48 is moved to open the discharge port 34, and the substrate holder K1 (substrate K held by the substrate holder K1) is transferred from the first arm 41 to the second arm 42 through the discharge port 34, and the substrate K is transported from the substrate introduction chamber 33 to the processing chamber 31.

[0097] Next, the first sliding door 48 is moved to close the discharge port 34, airtightly isolating the processing chamber 31 from the substrate introduction chamber 33, and the second arm 42 moves the substrate holder K1 to a retracted position (a position where the processing target surface Ka of the substrate K is below the discharge port 34 and the load port 37), and the film formation process is started when the pressure inside the processing chamber 31 drops to a predetermined level. The film formation process is performed in the same manner as in the film formation method of the first embodiment.

[0098] In the film formation method of this embodiment as well, the aerosol is sprayed onto the treatment surface Ka of the substrate K with the substrate holder K1 moved to the retracted position. Therefore, unused ceramic raw material powder is less likely to scatter into the carry-in port 34 or the carry-in port 37, and is less likely to enter the substrate introduction chamber 33 or the substrate removal chamber 36 during the film formation process. In addition, unused ceramic raw material powder is less likely to accumulate or adhere to the sliding doors 48, 49.

[0099] After the film formation process, the second sliding door 49 is moved to open the carry-in entrance 37, and the substrate holder K1 (processed substrate K held by the substrate holder K1) is handed over from the second arm 42 to the third arm 43 through the carry-in entrance 37, transporting the substrate K from the processing chamber 31 to the substrate unloading chamber 36. Thereafter, the second sliding door 49 is moved to close the carry-in entrance 37, and the third arm 43 is moved so that the substrate holder K1 is positioned in the storage location of the second holder insertion cassette 38. Then, after the substrate holder K1 is placed in the storage location, the suction and holding of the substrate holder K1 by the third arm 43 is released. This completes the film formation process for one substrate K.

[0100] In this embodiment, a plurality of unprocessed substrates K can be loaded into the substrate introduction chamber 33 in advance, and a plurality of processed substrates K can be temporarily stored in the substrate unloading chamber 36. Therefore, after the substrate K is transported from the substrate introduction chamber 33 to the processing chamber 31 and the two chambers are airtightly sealed, preparations can be made to transport the next substrate K to be processed into the processing chamber 31 (i.e., removing the substrate holder K1 from the first holder insertion cassette 35) without waiting for the film formation process in the processing chamber 31 to be completed. Furthermore, after the plurality of substrates K are accommodated in the substrate introduction chamber 33, the pressures in the processing chamber 31, the substrate introduction chamber 33, and the substrate unloading chamber 36 can be adjusted to approximately the same pressure as that required for the film formation process. This eliminates the need for large-scale pressure adjustments, such as reducing and restoring pressure in the processing chamber 31, and allows the plurality of substrates K to be processed continuously by simply performing pressure adjustments that can be performed in a short time.

[0101] As described above, in the film formation apparatus 30 and film formation method according to this embodiment, unused ceramic raw material powder is less likely to scatter into the discharge port 34 and the supply port 37 during the film formation process, and therefore scattering of unused ceramic raw material powder outside the processing chamber 31 can be suppressed.

[0102] [Another embodiment] [1] In the first embodiment, the gas injection mechanism 10 is provided, but the present invention is not limited to this and may be provided without the gas injection mechanism 10. Furthermore, the film forming apparatus of the second embodiment may be provided with a gas injection mechanism.

[0103] [2] In the first embodiment, the gas injection mechanism 10 injects the shielding gas in a direction substantially perpendicular to the transport direction of the substrate K, but the present invention is not limited to this. In order to prevent unused ceramic raw material powder from being carried away by the flow of the shielding gas and scattering toward the communication part 7, it is preferable that the injection direction of the shielding gas intersects with the transport direction (inlet / outlet direction) of the substrate K, and that the components of the vector representing the injection direction do not include a component directed from the processing chamber 2 to the auxiliary chamber 6.

[0104] [3] In the first embodiment, the blocking mechanism 9 is provided, but the present invention is not limited to this, and the blocking mechanism 9 may not be provided. Furthermore, in the second embodiment, the sliding doors 48, 49 are provided, but the present invention is not limited to this, and the sliding doors 48, 49 may not be provided. Even in this case, since the holding part 4 and the substrate holder K1 are moved to the retracted positions during the film formation process, unused ceramic raw material powder is less likely to scatter into the communication part 7, the discharge port 34, or the carry-in port 37, and unused ceramic raw material powder is less likely to enter the auxiliary chamber 6, the substrate introduction chamber 33, or the substrate unloading chamber 36.

[0105] [4] In the first and second embodiments, the holding unit 4 and the substrate holder K1 hold the substrate K so that the surface Ka to be treated faces downward, and the aerosol is sprayed from below in the vertical direction toward the surface Ka to be treated. However, this is not limiting. For example, the vertical positions of the holding unit 4 and the substrate holder K1 and the ejection end 5a of the aerosol transport pipe 5 may be interchanged, and the aerosol may be sprayed from above in the vertical direction toward the surface Ka to be treated.

[0106] [5] In the first embodiment, the retracted position is below the transfer position, but this is not limiting. The retracted position is not particularly limited as long as the communication part 7 between the processing chamber 2 and the auxiliary chamber 6 is not located in the same plane as the processing target surface Ka of the substrate K, and may be set appropriately depending on the positions of the holder 4, auxiliary chamber 6, aerosol transfer pipe 5, etc.

[0107] [6] In the first embodiment, one sub-chamber 6 is provided, but the present invention is not limited to this and multiple sub-chambers may be provided. For example, an additional opening may be formed in the processing chamber 2 at a position opposite the opening 2b, and another sub-chamber may be provided adjacent to the opening.

[0108] [7] In the first embodiment, the nozzle 11 sprays air along the opening surface of the opening 2b, but this is not limited to this. The nozzle 11 may spray air at a position away from the opening 2b so as to be approximately perpendicular to the transport direction (in / out direction) of the substrate K.

[0109] [8] In the second embodiment, the substrate K is transported using a magnetic adsorption means, but this is not limited to this, and the substrate K may be transported using other means.

[0110] [9] In the second embodiment, the transport mechanism 40 is provided with the misalignment prevention mechanism 45, but this is not limiting and the transport mechanism 40 may not be provided. The film forming apparatus of the first embodiment may also be provided with a transport mechanism that includes a misalignment prevention mechanism. Furthermore, the structure of the misalignment prevention mechanism 45 can be modified as appropriate, and the number, shape, and positions of the two protrusions 41b, 42b, and 43b formed on each arm 41, 42, and 43 and the recesses K6, K7, and K8 formed on the substrate holder K1 in the second embodiment may be changed.

[0111]

[10] In the second embodiment, the pressing mechanism 50 is provided to apply a pressing force to the sliding doors 48, 49. However, the present invention is not limited to this, and the pressing mechanism may not be provided. In addition, in the film forming apparatus of the first embodiment, the blocking mechanism may be configured as a sliding door, and a pressing mechanism may be provided.

[0112]

[11] In the second embodiment, the pressure adjustment mechanism 55 is provided to individually adjust the pressure in the processing chamber 31, the substrate introduction chamber 33, and the substrate removal chamber 36, but this is not limited to this.

[0113] The configurations disclosed in the above embodiments (including other embodiments) can be applied in combination with configurations disclosed in other embodiments, as long as no contradictions arise. Furthermore, the embodiments disclosed in this specification are examples, and the embodiments of the present invention are not limited to these and can be modified as appropriate within the scope of the purpose of the present invention. [Industrial Applicability]

[0114] The present invention can be applied to a film forming apparatus and a film forming method for forming a film on a substrate. [Explanation of symbols]

[0115] 1: Film deposition equipment 2: Processing room 3: Movement mechanism 6: Antechamber 7:Communication part 9:Shutoff mechanism 10: Gas injection mechanism 30: Film deposition equipment 31: Processing room 33: Base material introduction room (auxiliary room) 36: Base material removal room (auxiliary room) 41, 42, 43: Arm 41a, 42a, 43a: electromagnets (magnetic attraction means) 45: Position shift prevention mechanism 48,49:Sliding door 50: Pressing mechanism 55: Pressure adjustment mechanism K: Base material K1: Substrate holder Ka: Processing surface

Claims

1. 1. A film forming apparatus for forming a film on a surface to be treated of a substrate by ejecting an aerosol in which ceramic raw material powder is dispersed in a carrier gas toward the surface to be treated, a processing chamber in which the substrate is disposed; a holder disposed in the processing chamber and configured to hold the substrate; an auxiliary chamber communicating with the treatment chamber and through which the substrate passes between the auxiliary chamber and the treatment chamber; a moving mechanism that can move the holding unit to a retracted position where a communication unit between the processing chamber and the auxiliary chamber is not located in the same plane as the surface of the substrate to be processed.

2. 2. The film forming apparatus according to claim 1, further comprising a gas injection mechanism that injects a shielding gas that prevents the ceramic raw material powder from entering the auxiliary chamber through the communication portion.

3. The film forming apparatus according to claim 2 , wherein the gas injection mechanism injects the shielding gas in a direction intersecting a direction in which the substrate enters and exits.

4. 4. The film forming apparatus according to claim 1, further comprising a blocking mechanism for airtightly blocking the processing chamber from the auxiliary chamber in the communication part.

5. A film forming apparatus according to any one of claims 1 to 4, wherein in the retracted position, the surface of the substrate opposite to the surface to be processed while held by the holding portion faces the side of the processing chamber where the communicating portion is located.

6. 6. The film forming apparatus according to claim 1, further comprising a transport mechanism that transports the substrate between the processing chamber and the auxiliary chamber by utilizing a magnetic attraction means.

7. The transport mechanism includes: an arm having the magnetic attraction means and disposed in each of the processing chamber and the auxiliary chamber; a substrate holder that is detachably attached to the arm by the magnetic attraction means and that holds the substrate; The film deposition apparatus according to claim 6 , further comprising: a positional deviation prevention mechanism that prevents the substrate holder from being displaced relative to the arm.

8. 8. The film deposition apparatus according to claim 1, further comprising a sliding door in the communication section, the sliding door moving in a plane perpendicular to a transport direction of the substrate and abutting against an inner wall of the auxiliary chamber to airtightly isolate the processing chamber from the auxiliary chamber.

9. The film deposition apparatus according to claim 8 , further comprising a pressing mechanism that applies a force to the sliding door to press the sliding door against the inner wall of the auxiliary chamber.

10. a pressure adjusting mechanism capable of individually adjusting the pressures in the processing chamber and the auxiliary chamber; 10. The film forming apparatus according to claim 8, wherein the pressure adjustment mechanism is capable of adjusting the pressure in the auxiliary chamber to be higher than the pressure in the processing chamber.

11. The film formation apparatus according to any one of claims 1 to 10, comprising, as the auxiliary chambers, a substrate introduction chamber in which the substrate to be carried into the processing chamber is accommodated, and a substrate unloading chamber in which the substrate to be unloaded from the processing chamber is accommodated.

12. 1. A film forming method comprising: spraying an aerosol, in which ceramic raw material powder is dispersed in a carrier gas, toward a surface of a substrate to be treated, thereby forming a film on the surface to be treated, the method comprising: A film forming method in which a holding unit disposed in a processing chamber is moved to a retracted position in the same plane as a processing surface of the substrate held by the holding unit, where a communication unit between the processing chamber and an auxiliary chamber through which the substrate enters and exits between the processing chamber and the processing chamber is not located, and the aerosol is sprayed toward the processing surface.

13. 13. The film forming method according to claim 12, wherein the aerosol is sprayed toward the surface to be treated while a shielding gas that prevents the ceramic raw material powder from entering the auxiliary chamber through the communication part is sprayed.

14. The film forming method according to claim 13 , wherein the aerosol is sprayed toward the surface to be treated while the shielding gas is sprayed in a direction intersecting a direction in which the substrate enters and exits.

15. The film forming method according to any one of claims 12 to 14, wherein the aerosol is sprayed toward the surface to be processed while the processing chamber and the auxiliary chamber are airtightly isolated from each other at the communication part.

16. The film forming method according to any one of claims 12 to 15, wherein, in the retracted position, the surface of the substrate held by the holding part opposite to the surface to be processed faces the side of the processing chamber where the communicating part is located.

17. 17. The film forming method according to claim 12, wherein the substrate is transported between the processing chamber and the auxiliary chamber by utilizing magnetic attraction.

18. 18. The film formation method according to claim 17, wherein a substrate holder holding the substrate is transferred between arms respectively disposed in the processing chamber and the auxiliary chamber by utilizing the magnetic attraction while preventing misalignment between the arms and the substrate holder, thereby transporting the substrate between the processing chamber and the auxiliary chamber.

19. The film formation method according to any one of claims 12 to 18, wherein a sliding door in the communication section is moved in a plane perpendicular to a transport direction of the substrate and abutted against an inner wall of the auxiliary chamber, thereby airtightly isolating the treatment chamber and the auxiliary chamber, and then the aerosol is sprayed toward the surface to be treated.

20. 20. The film forming method according to claim 19, wherein the aerosol is sprayed toward the surface to be treated while a force is applied to the sliding door to press the sliding door against an inner wall of the auxiliary chamber.

21. 21. The film forming method according to claim 19, wherein the pressure in the auxiliary chamber is made higher than the pressure in the processing chamber.

22. The film formation method according to any one of claims 12 to 21, wherein the substrate is carried into the treatment chamber from a substrate introduction chamber serving as the auxiliary chamber, and the substrate is carried out from the treatment chamber to a substrate unloading chamber serving as the auxiliary chamber.

Images