Aminoalkoxydisilazane compound, composition for vapor deposition of silicon-containing thin film containing same, and method for producing silicon-containing thin film using same

Abstract

To provide an aminoalkoxydisilazane compound, a silicon-containing thin film deposition composition containing the same, and a method for producing a silicon-containing thin film using the same.SOLUTION: An aminoalkoxydisilazane compound represented by the chemical formula 1 in the figure is provided: R1, R11 and R12 each independently represent a C1-C7 alkyl group or the like, or R11 and R12 may be linked together to form a ring; R2 and R3 each independently represent a C1-C7 alkyl group or the like; R represents a C1-C7 alkyl group or a C3-C7 cycloalkyl group; and R4 and R5 each independently represent a C1-C7 alkyl group or the like. The aminoalkoxydisilazane compound of the present invention is thermally stable; and by using a highly volatile and reactive compound as a silicon-containing precursor, it is possible to form a silicon-containing thin film with excellent physical and electrical properties and high purity.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an aminoalkoxydisilazane compound, a composition for vapor deposition of a silicon-containing thin film containing the same, and a method for producing a silicon-containing thin film using the same. [Background technology]

[0002] Silicon-containing thin films are essential materials in semiconductor manufacturing and are utilized in various forms, such as silicon films, silicon oxide films, silicon nitride films, silicon carbonitride films, and silicon oxynitride films. These thin films play an essential role in advanced electronic devices such as memory and logic chips, flat panel displays (TFT), and solar cells, and are used as semiconductor substrates, diffusion masks, oxidation prevention films, and dielectric films. In recent years, polycrystalline silicon thin films have been applied to various fields, such as solar cells, and their utilization has been increasing.

[0003] Various silicon precursors have been developed for the deposition of silicon-containing thin films, including traditional silicon precursors such as silane, disilane, and halogenated silanes, as well as aminosilanes and alkoxysilanes. Representative processes include chemical vapor deposition (CVD) and atomic layer deposition (ALD). ALD, in particular, is highly effective in forming ultrafine thin films with uniform thickness, making it essential for achieving the fine patterns of modern semiconductor devices. Furthermore, plasma-assisted deposition techniques (PECVD and PEALD) are considered important for the production of next-generation semiconductors and display devices because they can deposit thin films at low temperatures.

[0004] Recent ultra-fine semiconductor devices have rapidly become smaller and more highly integrated, which has led to increasingly stringent requirements for silicon precursors. Precursors must be stable and highly volatile at room temperature, not produce non-volatile by-products during thin film deposition, have excellent thermal stability and reactivity at high temperatures, and be easy to handle, transport, and store. Precursors with these properties are essential for depositing high-quality thin films.

[0005] With the development of ultra-highly integrated semiconductor devices, conventional precursors have limitations in forming uniform thin films at low temperatures, resulting in reduced productivity and problems with physical and electrical properties. Therefore, there is a need to develop new silicon precursors that enable fast and uniform deposition at low temperatures and have excellent physical properties. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] KR10-2023-0151303A(2023.11.01) Summary of the Invention [Problem to be solved by the invention]

[0007] One aspect of the present invention provides an aminoalkoxydisilazane compound that can be used as a precursor for a silicon thin film, and a composition for depositing a silicon-containing thin film containing the same.

[0008] Another aspect of the present invention provides a method for preparing a silicon-containing thin film using the aminoalkoxydisilazane compound or a composition for depositing a silicon-containing thin film containing the same. [Means for solving the problem]

[0009] One aspect of the present invention provides an aminoalkoxydisilazane compound represented by the following chemical formula 1:

[0010] [ka]

[0011] In the above Chemical Formula 1, R 1 , R 11 , and R 12 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C2-C7 alkenyl, or11 and R 12 may be linked to each other to form a ring, R 2 and R 3 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C1-C7 alkoxy; R is C1-C7 alkyl or C3-C7 cycloalkyl; R 4 and R 5 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, C1-C7 alkoxy, or C3-C7 cycloalkyloxy.

[0012] Another aspect of the present invention provides a composition for depositing a silicon-containing thin film, comprising the aminoalkoxydisilazane compound according to the above aspect.

[0013] Yet another aspect of the present invention provides a method for producing a silicon-containing thin film using the aminoalkoxydisilazane compound according to the above aspect or a composition for silicon-containing thin film deposition containing the same. [Effects of the Invention]

[0014] The aminoalkoxydisilazane compound according to the present invention has excellent volatility and thermal stability, exists in a liquid state at room temperature and pressure, is easy to store and handle, and has high reactivity. Therefore, when used as a precursor for vapor deposition of a silicon-containing thin film, a high-purity and high-quality silicon-containing thin film can be formed.

[0015] By using the aminoalkoxydisilazane compound according to the present invention as a precursor for thin film deposition, a high-quality silicon-containing thin film having a high silicon content and excellent thermal stability and durability can be produced.

[0016] Furthermore, the silicon-containing thin film produced from the aminoalkoxydisilazane compound according to the present invention not only has excellent chemical and thermal stability, but also excellent durability and electrical properties. [Brief explanation of the drawings]

[0017] [Figure 1] 1 shows the results of thermogravimetric analysis (TGA) of ((dimethylamino)dimethylsilyl)(trimethoxysilyl)(isopropyl)amine prepared in Example 1. DETAILED DESCRIPTION OF THE INVENTION

[0018] Unless otherwise defined herein, all technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terms used in the description of this specification are merely for the purpose of effectively describing specific embodiments and are not intended to limit the present invention.

[0019] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise.

[0020] Throughout this specification, unless otherwise stated, "comprising," "comprising," "containing," or "having" an element means not to the exclusion of other elements, but may further include other elements, and does not exclude additional, unrecited elements, materials, or steps.

[0021] Numerical ranges used herein include lower and upper limits, all values ​​within the range, increments logically derived from the form and width of the defined range, all doubly limited values, and all possible combinations of upper and lower limits of numerical ranges limited in different forms. For example, if the content of a composition is limited to 10% to 80% or 20% to 50%, numerical ranges of 10% to 50% or 50% to 80% should also be interpreted as being described herein. Unless otherwise defined herein, values ​​outside the numerical ranges that may occur due to experimental error or rounding of values ​​are also included in the defined numerical range.

[0022] Unless otherwise defined herein, "about" may contemplate a value within 30%, 25%, 20%, 15%, 10%, or 5% of the stated value.

[0023] Unless otherwise specified, units used in this specification are based on weight, and for example, units such as % or ratio mean % by weight or weight ratio, and % by weight means the weight % of any one component of the total composition, unless otherwise defined.

[0024] As used herein, the term "C A -C B " means "the number of carbon atoms is A or more and B or less", and the term "A to B" means "A or more and B or less".

[0025] As used herein, the term "alkyl" means a monovalent organic radical derived from a straight-chain or branched saturated hydrocarbon and may have 1 to 7, 1 to 5, 1 to 4, or 1 to 3 carbon atoms and may include, for example, methyl, ethyl, propyl, isopropyl, butyl, t-butyl, isobutyl, pentyl, and the like.

[0026] As used herein, the term "cycloalkyl" refers to a monovalent saturated carbocyclic radical composed of one or more rings. Examples of cycloalkyl radicals include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and the like.

[0027] The term "alkenyl," as used herein, refers to a straight-chain or branched hydrocarbon radical containing 2 to 7 carbon atoms and one or more carbon-carbon double bonds. Specifically, the alkenyl is a lower alkenyl radical having 2 to 7, 2 to 5, 2 to 4, or 2 to 3 carbon atoms. Examples of alkenyl radicals may include vinyl, propenyl, isopropenyl, allyl, butenyl, 4-methylbutenyl, and the like. The alkenyl may include radicals having cis and trans orientations, or alternatively, E and Z orientations.

[0028] As used herein, "normal temperature" refers to a temperature that is not artificially controlled, and may be, for example, 20°C to 40°C, or 20°C to 30°C, or 23°C to 26°C.

[0029] The present disclosure will now be described in detail, but by way of example only, and the present disclosure is not limited to the specific embodiments illustratively described.

[0030] One aspect of the present invention provides an aminoalkoxydisilazane compound as a precursor for producing a high-quality silicon-containing thin film. Specifically, the aminoalkoxydisilazane compound according to one aspect is represented by the following Chemical Formula 1:

[0031] [ka]

[0032] In the above Chemical Formula 1, R 1 , R 11 , and R 12 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C2-C7 alkenyl, or 11 and R 12 may be linked to each other to form a ring, R 2 and R 3 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C1-C7 alkoxy; R is C1-C7 alkyl or C3-C7 cycloalkyl; R 4 and R 5 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, C1-C7 alkoxy, or C3-C7 cycloalkyloxy.

[0033] An aminoalkoxydisilazane compound according to one embodiment has a Si-N-Si disilazane skeleton, with an amino substituent introduced into one Si and at least one alkoxy substituent introduced into the other Si. Due to the above-mentioned structural features and the asymmetric structure of the silicon moieties present on both sides of the central N of the disilazane skeleton, the aminoalkoxydisilazane compound according to one embodiment has a lower activation energy and excellent thermal stability, significantly improving reactivity, and does not produce nonvolatile by-products, allowing for the easy formation of high-quality silicon-containing thin films at high deposition rates. The aminoalkoxydisilazane compound according to one embodiment exists in a liquid state at room temperature and under manageable pressures, making it easy to handle.

[0034] In one embodiment, in Formula 1, the R 1 , R 11 , and R 12 are each independently C1-C5 alkyl, C3-C7 cycloalkyl, or C2-C4 alkenyl, or 11 and R 12 may be linked to each other by a C2-C7 alkylene to form a ring, and R 2 and R 3 are each independently C1-C5 alkyl or C3-C7 cycloalkyl, R is C1-C5 alkyl or C3-C7 cycloalkyl, and R 4 and R 5 may each independently be C1-C5 alkyl, C3-C7 cycloalkyl, or C1-C5 alkoxy.

[0035] In one embodiment, in Formula 1, R 1 , R 11 , and R 12 are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C2-C3 alkenyl, and R 2 , R 3 and R are each independently C1-C4 alkyl or C3-C6 cycloalkyl; R 4is C1-C4 alkoxy or C3-C6 cycloalkyloxy, and R 5 may be C1-C4 alkyl, C3-C6 cycloalkyl, or C1-C4 alkoxy.

[0036] In one embodiment, in Formula 1, R 1 is C1-C4 alkyl, C3-C6 cycloalkyl, or C2-C3 alkenyl, and R 11 and R 12 may be linked to each other by C2-C6 alkylene to form a ring, R 2 , R 3 and R are each independently C1-C4 alkyl or C3-C6 cycloalkyl; R 4 and R 5 may each independently be C1-C4 alkyl, C3-C6 cycloalkyl, or C1-C4 alkoxy.

[0037] In one embodiment, in Formula 1, R 1 , R 11 , and R 12 are each independently C1-C4 alkyl or C2-C3 alkenyl, and R 2 , R 3 and R are each independently C1-C4 alkyl; R 4 and R 5 may each independently be C1-C4 alkyl or C1-C4 alkoxy.

[0038] In one embodiment, in Formula 1, R 1 , R 2 , R 3 , R, R 11 , and R 12 are each independently C1-C4 alkyl, and R 4 and R 5 may each independently be C1-C4 alkyl or C1-C4 alkoxy.

[0039] In one embodiment, the aminoalkoxydisilazane compound may be represented by the following Chemical Formula 2 or Chemical Formula 3.

[0040] [ka]

[0041] [ka]

[0042] In the above chemical formulas 2 and 3, R 1 , R 11 , and R 12 are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C2-C3 alkenyl; R 2 , R 3 , R, and R 4a are each independently C1-C4 alkyl or C3-C6 cycloalkyl; R 4 and R 5 are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C1-C4 alkoxy; a is an integer of 0 to 4.

[0043] In one embodiment, R 1 , R 11 , and R 12 are each independently C1-C4 alkyl or C2-C3 alkenyl, and R 2 , R 3 , R, and R 4a are each independently C1-C4 alkyl, and R 4 and R 5 are each independently C1-C4 alkyl or C1-C4 alkoxy, and a may be an integer of 0 to 3.

[0044] In one embodiment, the aminoalkoxydisilazane compound may be represented by the following Chemical Formula 4:

[0045] [ka]

[0046] In the above Chemical Formula 4, R 1 is C1-C4 alkyl or C2-C3 alkenyl, R 21 is C1-C4 alkyl, R 22 is C1-C4 alkyl or C1-C4 alkoxy, R is C1-C4 alkyl; R 23 is C1-C4 alkyl or C2-C3 alkenyl.

[0047] As an example, the above-mentioned R 1 may be C1-C3 alkyl or C2-C3 alkenyl, and in one specific example may be methyl, ethyl, isopropyl, vinyl, isopropenyl, or allyl.

[0048] As an example, the above-mentioned R 21 may be C1-C3 alkyl, and in one particular example may be methyl or ethyl.

[0049] As an example, the above-mentioned R 22 may be C1-C3 alkyl or C1-C3 alkoxy, or may be C1-C3 alkoxy, and in one particular example may be methyl, ethyl, methoxy, or ethoxy.

[0050] For example, R may be C1-C3 alkyl, and in one specific example, R may be methyl or ethyl.

[0051] As an example, the above-mentioned R 23may be C1-C3 alkyl or C2-C3 alkenyl, and in one specific example may be methyl, ethyl, isopropyl, vinyl, isopropenyl, or allyl.

[0052] In one embodiment, the aminoalkoxydisilazane compound may be selected from the following compounds, but is not limited to these: [ka]

[0053] The aminoalkoxydisilazane compounds described above can be prepared by methods within the purview of those of ordinary skill in the art.

[0054] Another aspect of the present invention provides a composition for depositing a silicon-containing thin film, comprising an aminoalkoxydisilazane compound according to one aspect.

[0055] In one embodiment, the composition for depositing a silicon-containing thin film includes the aminoalkoxydisilazane compound, which has high volatility and excellent thermal stability, as a precursor for depositing a thin film, and the content thereof may be within a range recognizable by those skilled in the art, taking into consideration the film formation conditions, the thickness, and properties of the thin film, etc.

[0056] Yet another aspect of the present invention provides a method for producing a silicon-containing thin film, comprising depositing a silicon-containing thin film using the aminoalkoxydisilazane compound represented by Formula 1 or a composition for depositing a silicon-containing thin film containing the same.

[0057] In one embodiment, the method for producing a silicon-containing thin film can produce a high-quality silicon-containing thin film at a high deposition rate under various conditions by using the aminoalkoxydisilazane compound as a precursor.

[0058] In one embodiment, the method for manufacturing the silicon-containing thin film may be any method known to those skilled in the art, without limitation. For example, the method may be performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD).

[0059] In one embodiment, the aminoalkoxydisilazane compound and the reaction gas may each be supplied continuously or discontinuously, and discontinuous supply may include a pulsed supply.

[0060] For example, the method for producing a silicon-containing thin film may include the steps of: a) maintaining a temperature of a substrate mounted in a chamber at 100°C or higher; b) adsorbing an aminoalkoxydisilazane compound according to an embodiment or a silicon-containing thin film deposition composition containing the same onto the substrate; and c) injecting a reaction gas into the substrate onto which the aminoalkoxydisilazane compound or the silicon-containing thin film deposition composition containing the same has been adsorbed, thereby depositing a silicon-containing thin film.

[0061] The method for manufacturing the silicon-containing thin film may further include a step of purging to remove unreacted reactants.

[0062] Specifically, the method for producing a silicon-containing thin film may include the steps of: a) maintaining a temperature of a substrate mounted in a chamber at 100 to 700°C; b-1) adsorbing an aminoalkoxydisilazane compound according to an embodiment or a silicon-containing thin film deposition composition containing the same onto the substrate; b-2) purging the remaining aminoalkoxydisilazane compound or the remaining thin film deposition composition, and by-products; c-1) injecting a reaction gas into the substrate onto which the aminoalkoxydisilazane compound or the thin film deposition composition containing the same has been adsorbed, thereby forming a silicon-containing thin film; and c-2) purging the remaining reaction gas and by-products.

[0063] For example, when the method for producing the silicon-containing thin film is performed by plasma-enhanced atomic layer deposition (PEALD) or plasma-enhanced chemical vapor deposition (PECVD), the method may further include generating plasma after step a).

[0064] For example, in the method for producing a silicon-containing thin film, in step b), the aminoalkoxydisilazane compound or a composition for depositing a silicon-containing thin film containing the same may be injected together with a carrier gas.

[0065] The reactive gas may be any gas that is commonly used with a precursor, taking into consideration the type of silicon-containing thin film to be produced. Specific examples of the reactive gas include one or more selected from oxygen (O), ozone (O), distilled water (H), hydrogen peroxide (H), nitric oxide (NO), nitrous oxide (N), nitrogen dioxide (NO), ammonia (NH), nitrogen (N), hydrazine (N), amine, diamine, carbon monoxide (CO), carbon dioxide (CO), saturated or unsaturated hydrocarbons of C to C, and hydrogen.

[0066] The carrier gas may be one or more selected from, but not limited to, argon, helium, and nitrogen.

[0067] In one embodiment, deposition conditions may be adjusted depending on the desired structure or properties of the thin film, and examples of deposition conditions include the supply flow rate of the aminoalkoxydisilazane compound or the silicon-containing thin film deposition composition containing the same, the supply flow rate of the reactant gas and carrier gas, pressure, RF power, substrate temperature, etc. Specific examples include the supply flow rate of the aminoalkoxydisilazane compound or the silicon-containing thin film deposition composition being 10 to 1,000 cc / min, the carrier gas being 10 to 1,000 cc / min, the reactant gas being 1 to 1,500 cc / min, the pressure being 0.5 to 10 torr, the RF power being 50 to 1,000 W, and the substrate temperature being 100 to 700°C, 300 to 700°C, or 400 to 700°C, but are not limited thereto.

[0068] The substrate may be a substrate containing one or more semiconductor materials selected from the group consisting of Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC, InAs, and InP, an SOI (Silicon On Insulator) substrate, a quartz substrate, a glass substrate for a display, or a flexible plastic substrate such as polyimide, polyethylene terephthalate (PET, PolyEthylene Terephthalate), polyethylene naphthalate (PEN, PolyEthylene Naphthalate), polymethyl methacrylate (PMMA, Poly Methyl Meth Acrylate), polycarbonate (PC, PolyCarbonate), polyethersulfone (PES), or polyester, but is not limited to these.

[0069] In addition to forming the silicon-containing thin film directly on the substrate, multiple conductive layers, dielectric layers, or insulating layers may be formed between the substrate and the silicon-containing thin film.

[0070] According to one embodiment, high quality silicon-containing thin films can be produced using the aminoalkoxydisilazane compounds described above as precursors.

[0071] For example, the silicon-containing thin film may be any thin film that can be manufactured within the scope of a person skilled in the art. Specifically, the silicon-containing thin film may be a silicon oxide film (SiO), a silicon oxycarbide film (SiOC), a silicon nitride film (SiN), a silicon oxynitride film (SiON), a silicon carbonitride film (SiCN), or a silicon carbide film (SiC). In addition, various high-quality thin films containing silicon may be manufactured within the scope of a person skilled in the art, and may be used as a gate insulating film, a dielectric film of a capacitor, a tunnel insulating film of a nonvolatile memory device, etc.

[0072] The present invention will now be described in more detail with reference to the following examples. Prior to this, the terms and phrases used in the specification and claims should not be interpreted as being limited to their ordinary or dictionary meanings, but should be interpreted as meanings and concepts that are consistent with the technical idea of ​​the present invention, based on the principle that the inventor can appropriately define the concepts of terms in order to best describe his or her invention.

[0073] Therefore, it should be understood that the embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiment of the present invention and do not represent the entire technical idea of ​​the present invention, and that there may be various equivalents and modifications that can be substituted for them at the time of this application.

[0074] The following synthesis examples were carried out in a glove box or a Schlenk line under an anhydrous and inert atmosphere. The structures of the aminoalkoxydisilazane compounds were analyzed by NMR spectroscopy (Nuclear Magnetic Resonance, NMR, 400 MHz Ultrashield, Bürker). The thermal stability, volatility, and decomposition temperature of the aminoalkoxydisilazane compounds were analyzed by thermogravimetric analysis (TGA, L81-II, LINSEIS).

[0075] [Example 1] Synthesis of ((Dimethylamino)dimethylsilyl)(trimethoxysilyl)(isopropyl)amine Step 1: Synthesis of 1-chloro-N-isopropyl-1,1-dimethylsilanamine [ka] In a flame-dried 10 L flask under an anhydrous and inert atmosphere, add 11.16 g (2.411 mol) of dichlorodimethylsilane ((CH3)2SiCl2)3 and n-pentane (n-CH5H 12 3,319 mL (24.110 mol) of N-(2-chloro-N-isopropyl-1,1-dimethylsilane) was added, and while maintaining the internal temperature at -20°C, 285.03 g (4.821 mol) of isopropylamine ((CH3)2CHNH2) was slowly added. After the addition was complete, the mixture was stirred at room temperature for 3 hours to complete the reaction. The reaction mixture was filtered to remove isopropylamine hydrochloride ((CH3)2CHNH2·HCl). The solvent was removed from the resulting filtrate under reduced pressure, followed by vacuum distillation at 60°C and 100 torr to obtain the title compound, 1-chloro-N-isopropyl-1,1-dimethylsilaneamine ((CH3)2CHNHSi(CH3)2Cl) (73% yield). 1 H-NMR (C6D6): δ 0.25 (s, 6H, Si(CH3)2), 0.92 (d, 6H, (CH(CH3)2), 2.99(m, 1H, CH)

[0076] Step 2: Synthesis of lithium dimethylamide [ka] Under an anhydrous and inert atmosphere, a flame-dried 3 L flask was charged with 917 mL (2.411 mol) of 2.63 M n-butyllithium (n-C4H9Li) and n-hexane (n-C6H14 786 mL (6.027 mol) of dimethylamine ((CH3)2NH) was added, and 114.12 g (2.532 mol) of dimethylamine was slowly added while maintaining the internal temperature at -20°C. After the addition was complete, the mixture was stirred at room temperature for 3 hours to complete the reaction. After the reaction was complete, the solvent was removed under reduced pressure in vacuo and dried to obtain an equivalent amount of the title compound, lithium dimethylamide (LiN(CH3)2).

[0077] Step 3: Synthesis of (Dimethylamino)(isopropylamino)dimethylsilane [ka] Under an anhydrous and inert atmosphere, add 15.79 g (0.309 mol) of lithium dimethylamide (LiN(CH3)2) synthesized in step 2 and n-pentane (n-CH5) to a flame-dried 4 L flask. 12 The reactor was charged with 2,140 mL (18.569 mol) of 1-chloro-N-isopropyl-1,1-dimethylsilaneamine ((CH3)2CHNHSi(CH3)2Cl) synthesized in Step 1, and while maintaining the internal temperature at -40°C, 46.95 g (0.309 mol) was added. After the addition was complete, the mixture was stirred at room temperature for 3 hours to complete the reaction. The reaction mixture was filtered to remove lithium chloride (LiCl), and the solvent was removed from the resulting filtrate under reduced pressure. The resulting solution was then distilled under reduced pressure at 25°C and 50 torr to obtain 29.6 g (0.185 mol) of the title compound, (dimethylamino)(isopropylamino)dimethylsilane ((CH3)2NSi(CH3)2NHCH(CH3)2) (60% yield). 1 H-NMR (C6D6): δ 0.07(s, 6H, Si(CH3)2), 0.29 (br, 1H, NH), 1.00 (d, 6H, CH(CH3)2), 2.49 (s, 6H SiN(CH3)2), 2.99 (ds, 1H, CH) 13C NMR (C6D6): δ -1.96 (SiCH3), 27.8 (CHCH3), 37.5(SiNCH3), 42.6(CH) 29 Si-NMR (C6D6): δ -7.5

[0078] Step 4: Synthesis of ((Dimethylamino)dimethylsilyl)(trimethoxysilyl)(isopropyl)amine [ka] Under an anhydrous and inert atmosphere, add 50 g (0.195 mol) of (dimethylamino)(isopropylamino)dimethylsilane ((CH3)2NSi(CH3)2NHCH(CH3)2) synthesized in Step 3 and n-hexane (n-CH6H6H6) to a flame-dried 3 L flask. 14 1,527 mL (11.707 mol) of 2.63 M n-butyllithium (n-C4H9Li) was slowly added while maintaining the internal temperature at -50°C, and the mixture was stirred at room temperature for 3 hours. After stirring was completed, 29.71 g (0.195 mol) of tetramethyl orthosilicate (Si(OCH3)4) was slowly added to the reaction mixture, and the mixture was stirred at room temperature for 24 hours to complete the reaction. The reaction mixture was filtered to remove lithium methoxide (LiOCH3), and the solvent was removed from the resulting filtrate under reduced pressure. The resulting solution was then distilled under reduced pressure at 48°C and 0.5 torr to obtain 29 g (0.103 mol) of the title compound, ((dimethylamino)dimethylsilyl)(trimethoxysilyl)(isopropyl)amine ((CH3)2NSi(CH3)2N(CH(CH3)2)Si(OCH3)3), as a colorless liquid (yield: 53%). 1H-NMR (C6D6): δ 0.29(s, 6H, Si(CH3)2), 1.32(d, 6H, CH(CH3)2), 2.53(s, 6H, N(CH3)2), 3.44(s, 9H, Si(OCH3)3), 3.29(m, 1H, CH(CH3)2) 13 C-NMR (C6D6): δ 25.1, 37.70, 45.54, 49.76 29 Si-NMR (C6D6): δ -3.96, -62.73

[0079] FIG. 1 shows the results of thermogravimetric analysis (TGA) of ((dimethylamino)dimethylsilyl)(trimethoxysilyl)(isopropyl)amine prepared in Example 1. Referring to FIG. 1, it can be seen that the compound of Example 1 has fast vaporization properties, with more than 99% by weight being vaporized at around 240°C without any residual material due to thermal decomposition. This indicates that the compound of Example 1 has excellent thermal stability and volatility.

[0080] As described above, the present invention has been described using specific and limited examples and comparative examples, but these are provided merely for a more general understanding of the present invention, and the present invention is not limited to the above examples, and those skilled in the art can make various modifications and variations from such descriptions. Therefore, the spirit of the present invention should not be limited to the above examples, and not only the scope of the appended claims, but also equivalents or equivalent modifications to the scope of the claims, all fall within the scope of the spirit of the present invention.

Claims

1. An aminoalkoxydisilazane compound represented by the following chemical formula 1. 【Chemistry 1】 (In the above chemical formula 1, R １ , R １１ , and R １２ are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C2-C7 alkenyl, or １１ and R １２ may be linked to each other to form a ring, R ２ and R ３ are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C1-C7 alkoxy; R is C1-C7 alkyl or C3-C7 cycloalkyl; R ４ and R ５ are each independently C1-C7 alkyl, C3-C7 cycloalkyl, C1-C7 alkoxy, or C3-C7 cycloalkyloxy.

2. The R １ , R １１ , and R １２ are each independently C1-C5 alkyl, C3-C7 cycloalkyl, or C2-C4 alkenyl, or １１ and R １２ may be linked to each other via a C2-C7 alkylene to form a ring; R ２ and R ３ are each independently C1-C5 alkyl or C3-C7 cycloalkyl; R is C1-C5 alkyl or C3-C7 cycloalkyl; R ４ and R ５ is each independently C1-C5 alkyl, C3-C7 cycloalkyl, or C1-C5 alkoxy.

3. 2. The aminoalkoxydisilazane compound according to claim 1, which is represented by the following chemical formula 2 or 3: 【Chemistry 2】 (In the above chemical formulas 2 and 3, R １ , R １１ , and R １２ are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C2-C3 alkenyl; R ２ , R ３ , R, and R ４ａ are each independently C1-C4 alkyl or C3-C6 cycloalkyl; R ４ and R ５ are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C1-C4 alkoxy; a is an integer from 0 to 4.

4. The R １ , R １１ , and R １２ are each independently C1-C4 alkyl or C2-C3 alkenyl; R ２ , R ３ , R, and R ４ａ are each independently C1-C4 alkyl; R ４ and R ５ are each independently C1-C4 alkyl or C1-C4 alkoxy; 4. The aminoalkoxydisilazane compound according to claim 3, wherein a is an integer of 0 to 3.

5. The R １ , R ２ , R ３ , R, R １１ , and R １２ are each independently C1-C4 alkyl; R ４ and R ５ are each independently C1-C4 alkyl or C1-C4 alkoxy.

6. 2. The aminoalkoxydisilazane compound according to claim 1, which is selected from the following structures: 【Transformation 3】

7. A composition for vapor deposition of a silicon-containing thin film, comprising the aminoalkoxydisilazane compound according to any one of claims 1 to 6.

8. 1. A method for producing a silicon-containing thin film, comprising depositing a silicon-containing thin film using an aminoalkoxydisilazane compound represented by the following Chemical Formula 1, or a composition for depositing a silicon-containing thin film containing the same: 【Chemistry 4】 (In the above chemical formula 1, R, R １ ~R ５ , R １１ , and R １２ is defined as in claim 1.)

9. 10. The method for producing a silicon-containing thin film according to claim 8, wherein the production method is performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), or plasma enhanced atomic layer deposition (PEALD).

10. 9. The method for producing a silicon-containing thin film according to claim 8, wherein the silicon-containing thin film is a silicon oxide film (SiO), a silicon oxycarbide film (SiOC), a silicon nitride film (SiN), a silicon oxynitride film (SiON), a silicon carbonitride film (SiCN), or a silicon carbide film (SiC).

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