Plasma processing equipment

Abstract

Provided is a plasma treatment device comprising: a first power supply that is configured to supply, to an antenna, a first electric signal including a first RF signal having a first RF frequency; a second power supply that is configured to supply, to at least one electrode, a second electric signal including a second RF signal having a second RF frequency; a third power supply that is configured to supply, to at least one electrode, a third electric signal including a DC signal or a third RF signal having a third RF frequency lower than the first RF frequency and the second RF frequency; and a control unit that is configured to control the first power supply, the second power supply, and the third power supply so as to selectively execute a first plasma treatment mode, a second plasma treatment mode, and a third plasma treatment mode. The first plasma treatment mode is for supplying the first electric signal to the antenna and supplying the second electric signal to the at least one electrode without supplying the third electric signal to the at least one electrode. The second plasma treatment mode is for supplying the first electric signal to the antenna and supplying the third electric signal to the at least one electrode without supplying the second electric signal to the at least one electrode. The third plasma treatment mode is for supplying the second electric signal and the third electric signal to the at least one electrode without supplying the first electric signal to the the antenna.

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] For example, Patent Document 1 proposes a plasma process using an inductively coupled plasma processing apparatus. For example, in a laminated film in which two or more films such as an organic film, an amorphous carbon film, a silicon oxide film, and a polysilicon film are stacked, soft and thin films and hard and thick films are mixed, and the entire laminated film cannot be processed at once using an inductively coupled plasma processing apparatus, so multiple plasma processing apparatuses may be used for each film depending on its characteristics. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-67503 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that enables etching to be performed on a plurality of film types in a single plasma processing apparatus. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a plasma processing apparatus including: a plasma processing chamber; a substrate support disposed within the plasma processing chamber and including at least one electrode; an antenna disposed above the plasma processing chamber; a first power supply configured to supply a first electrical signal to the antenna, the first electrical signal comprising a first RF signal having a first RF frequency; a second power supply configured to supply a second electrical signal to the at least one electrode, the second electrical signal comprising a second RF signal having a second RF frequency; a third power supply configured to supply a third electrical signal to the at least one electrode, the third electrical signal comprising a third RF signal having a third RF frequency lower than the first RF frequency and the second RF frequency or a DC signal; and a control unit configured to control the first power supply, the second power supply, and the third power supply to selectively perform a plasma processing mode and a third plasma processing mode, wherein the first plasma processing mode supplies the first electrical signal to the antenna and the second electrical signal to the at least one electrode without supplying the third electrical signal to the at least one electrode, the second plasma processing mode supplies the first electrical signal to the antenna and the third electrical signal to the at least one electrode without supplying the second electrical signal to the at least one electrode, and the third plasma processing mode supplies the second electrical signal and the third electrical signal to the at least one electrode without supplying the first electrical signal to the antenna. [Effects of the Invention]

[0006] According to one aspect, etching can be performed in accordance with a plurality of film types in one plasma processing apparatus. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing an example of a plasma processing system according to an embodiment. [Figure 2]1 is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment; [Figure 3] FIG. 2 is a diagram showing an example of a matching circuit for two bias pulse signals according to the embodiment. [Figure 4] 1 is a flowchart showing an example of an etching method according to an embodiment. [Figure 5] FIG. 2 is a diagram showing an example of a laminated film according to an embodiment. [Figure 6] 5A to 5C are diagrams showing examples of application of pulse signals in each mode according to the embodiment. [Figure 7] 5A to 5C are diagrams schematically showing the states of ion flux, ion energy, and radical flux in each mode according to the embodiment. [Figure 8] FIG. 10 is a schematic cross-sectional view showing another example of the plasma processing apparatus according to the embodiment. [Figure 9] 5A to 5C are diagrams showing examples of signals in each mode according to the embodiment. [Figure 10] 5A to 5C are diagrams showing examples of signals in each mode according to the embodiment. [Figure 11] 5A to 5C are diagrams showing examples of signals in each mode according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Plasma processing system] First, a plasma processing system according to an embodiment will be described with reference to Figures 1 and 2. Figure 1 is a diagram showing an example of a plasma processing system according to an embodiment. Figure 2 is a cross-sectional schematic diagram showing an example of a plasma processing apparatus 1 according to an embodiment.

[0010] In the embodiment, the plasma processing system includes a plasma processing apparatus 1 and a controller 2. The plasma processing apparatus 1 is configured to generate plasma from a gas supplied into the plasma processing chamber 10 by supplying three high-frequency power pulses (three RF pulse signals) into the plasma processing chamber 10. The plasma processing apparatus 1 then processes a substrate by exposing the substrate to the generated plasma.

[0011] The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space 10s. The plasma processing chamber 10 also has at least one gas inlet 13c for supplying at least one processing gas into the plasma processing space 10s and at least one gas outlet 10b for exhausting gas from the plasma processing space 10s. The gas inlet 13c is connected to a gas supply unit 20 (described later), and the gas outlet 10b is connected to an exhaust system 40 (described later). The substrate support 11 is disposed within the plasma processing space 10s and has a substrate support surface for supporting a substrate.

[0012] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In this embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In the embodiment, each of the three RF pulse signals (a source pulse signal, a first bias pulse signal, and a second bias pulse signal, which will be described later) has a frequency in the range of 100 kHz to 150 MHz.

[0013] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In an embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 21. The control unit 2 may include, for example, a processing unit (CPU: Central Processing Unit) 21a, a storage unit 21b, and a communication interface 21c. The processing unit 21a may be configured to perform various control operations based on programs stored in the storage unit 21b. The storage unit 21b may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 21c may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0014] An example of the configuration of an inductively coupled plasma processing apparatus 1 will be described below with reference to FIG.

[0015] The inductively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply, and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window 10c and a sidewall 10d. The plasma processing apparatus 1 also includes a substrate support 11, a gas inlet, and an antenna 14. The antenna 14 is disposed above the plasma processing chamber 10 (i.e., the dielectric window 10c). The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 10c, the sidewall 10d of the plasma processing chamber 10, the substrate support 11, and a bottom wall.

[0016] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. In the embodiment, the main body 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has the substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0017] The gas inlet is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. In this embodiment, the gas inlet includes a center gas injector (CGI) 13. The center gas injector 13 is disposed above the substrate support 11 and attached to a central opening formed in the dielectric window 10c. The center gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet port 13c. The process gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas inlet port 13c. In addition to or instead of the center gas injector 13, the gas inlet may include one or more side gas injectors (SGI) attached to one or more openings formed in the sidewall 10d.

[0018] The gas supply unit 20 may include at least one gas source 24 and at least one flow rate controller 22. In an embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 24 to the gas inlet via a corresponding flow rate controller 22 and an on-off valve V. Each flow rate controller 22 may include, for example, a mass flow controller or a pressure-controlled flow rate controller. Furthermore, the gas supply unit 20 may include at least one flow rate modulation device that modulates or pulses the flow rate of the at least one process gas.

[0019] The power supply unit includes an RF power supply unit 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply unit 31 is configured to supply three RF signals (RF power), namely, a source pulse signal and first and second bias pulse signals, to the conductive member of the substrate support unit 11 and / or the antenna 14. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply unit 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying either the first or second bias pulse signal to the conductive member of the substrate support unit 11, a bias potential is generated on the substrate W, thereby attracting ions in the formed plasma to the substrate W.

[0020] In the embodiment, the RF power supply unit 31 includes a source generating unit 31a, a first bias generating unit 31b, and a second bias generating unit 31c. The source generating unit 31a (first power supply) is coupled to the antenna 14 via at least one impedance matching circuit and is configured to generate a source pulse signal and supply the source pulse signal to the antenna 14. The source generating unit 31a is coupled to the antenna 14 via an impedance matching circuit 33. In the embodiment, the source pulse signal has a frequency in the range of 13 MHz to 150 MHz. In the embodiment, the source generating unit 31a may be configured to generate a plurality of source pulse signals having different frequencies. The generated one or more source pulse signals are supplied to the antenna 14. The first power supply is configured to supply a first electrical signal to the antenna 14, and the first electrical signal (source pulse signal) includes a first RF signal having a first RF frequency.

[0021] In the embodiment, the first bias generation unit 31b (second power supply) is coupled to a conductive member of the substrate support unit 11 via at least one impedance matching circuit, and is configured to generate a first bias pulse signal and supply the first bias pulse signal to the substrate support unit 11. The first bias generation unit 31b is coupled to the substrate support unit 11 via an impedance matching circuit 34. In the embodiment, the first bias pulse signal has a lower frequency than the source pulse signal. In the embodiment, the first bias pulse signal has a frequency in the range of 100 kHz to 60 MHz. Examples of the frequency of the first bias pulse signal include 40 MHz and 60 MHz. The second power supply is configured to supply a second electrical signal to at least one electrode, and the second electrical signal (first bias pulse signal) includes a second RF signal having a second RF frequency.

[0022] In the embodiment, the first bias generating unit 31b may be configured to generate a plurality of first bias pulse signals having different frequencies, and the generated one or more first bias pulse signals are supplied to the conductive member of the substrate support 11.

[0023] In the embodiment, the second bias generation unit 31c (third power supply) is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit, and is configured to generate a second bias pulse signal and supply the second bias pulse signal to the substrate support 11. The second bias generation unit 31c is coupled to the substrate support 11 via an impedance matching circuit 34. In the embodiment, the second bias pulse signal has a frequency in the range of 100 kHz to 13.56 MHz, which is lower than the frequency of the first bias pulse signal. The third power supply is configured to supply a third electrical signal to at least one electrode, and the third electrical signal (second bias pulse signal) includes a third RF signal or a DC signal having a third RF frequency lower than the first RF frequency and the second RF frequency.

[0024] In various embodiments, the second bias generating unit 31c may be configured to generate a plurality of second bias pulse signals having different frequencies. The generated one or more second bias pulse signals are supplied to the conductive members of the substrate support 11. In various embodiments, the source pulse signal, the first bias pulse signal, and the second bias pulse signal are radio frequency (RF) signals.

[0025] The antenna 14 includes one or more coils. In an embodiment, the antenna 14 may include an outer coil and an inner coil arranged coaxially. In this case, the RF power supply 31 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same source generator 31a may be connected to both the outer coil and the inner coil, or separate source generators 31a may be connected to the outer coil and the inner coil separately.

[0026] The exhaust system 40 may be connected to, for example, a gas exhaust port 10b provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0027] [An example of the internal configuration of an impedance matching circuit] Next, an example of the configuration of the impedance matching circuit 34 will be described with reference to Fig. 3. Fig. 3 is a diagram showing an example of the internal configuration of the impedance matching circuit 34 according to the embodiment.

[0028] The first bias generating unit 31b and the second bias generating unit 31c are connected to the conductive members of the substrate support unit 11 via an impedance matching circuit 34 and a power supply line 37. The first bias pulse signal supplied from the first bias generating unit 31b is also referred to as LF1 power in the following description. The second bias pulse signal supplied from the second bias generating unit 31c is also referred to as LF2 power in the following description.

[0029] When the first bias pulse signal (LF1 power) supplied from the first bias generation unit 31b is coupled to the opposite side (the second bias generation unit 31c side) through the power supply line 36 in the impedance matching circuit 34, the supply efficiency of the LF1 power supplied to the plasma processing chamber 10 decreases. Similarly, when the second bias pulse signal (LF2 power) supplied from the second bias generation unit 31c is coupled to the opposite side (the first bias generation unit 31b side) through the power supply line 36, the supply efficiency of the LF2 power supplied to the plasma processing chamber 10 decreases. This reduces the supply of bias power to the plasma processing chamber 10, making it difficult to control ion energy, and degrading process performance.

[0030] Therefore, the impedance matching circuit 34 according to this embodiment includes a first adjustment circuit 34b1, a first isolation circuit 34b2, a second adjustment circuit 34c1, and a second isolation circuit 34c2. The first adjustment circuit 34b1 and the first isolation circuit 34b2 are connected between the first bias generation unit 31b and the power supply line 37. The second adjustment circuit 34c1 and the second isolation circuit 34c2 are connected between the second bias generation unit 31c and the power supply line 37. With this configuration, the first bias pulse signal (LF1 power) generated in the first bias generation unit 31b is supplied to the conductive members of the substrate support unit 11 while suppressing coupling to the second bias generation unit 31c. Furthermore, the second bias pulse signal (LF2 power) generated in the second bias generation unit 31c is supplied to the conductive members of the substrate support unit 11 while suppressing coupling to the first bias generation unit 31b.

[0031] The first adjustment circuit 34b1 has a variable element and is configured to match the impedance on the load side (substrate support part 11 side) of the first bias generation part 31b to the output impedance of the first bias generation part 31b. In the embodiment, the variable element of the first adjustment circuit 34b1 is a variable capacitor.

[0032] The second isolation circuit 34c2 is connected between the second bias generation unit 31c and the substrate support unit 11, and prevents coupling of the first bias pulse signal, which is the LF1 power from the first bias generation unit 31b.

[0033] The second adjustment circuit 34c1 has a variable element and is configured to match the impedance on the load side (substrate support part 11 side) of the second bias generation part 31c to the output impedance of the second bias generation part 31c. In the embodiment, the variable element of the second adjustment circuit 34c1 is a variable inductor.

[0034] The first isolation circuit 34b2 is connected between the first bias generation unit 31b and the substrate support unit 11, and prevents coupling of the second bias pulse signal, which is the LF2 power from the second bias generation unit 31c.

[0035] The second isolation circuit 34c2 is an RF choke circuit including an inductor L2. The first isolation circuit 34b2 is a resonant circuit including a capacitor C1 and an inductor L1. The first isolation circuit 34b2 is composed of the capacitor C1 and the inductor L1. The second isolation circuit 34c2 is composed of the inductor L2.

[0036] The first isolation circuit 34b2 sets the circuit constants C1 and L1 so that the impedance seen from the first bias pulse signal is 0 or close to 0, and the impedance seen from the second bias pulse signal is high, and the first bias generating unit 31b side appears to be a wall. As a result, the impedance seen from the second bias pulse signal in the first isolation circuit 34b2 is set to Z LF2 and the plasma load impedance is Z chamber When written as Z LF2 >>Z chamberholds true.

[0037] The second separation circuit 34c2 sets the circuit constant L2 so that the impedance seen from the second bias pulse signal is 0 or close to 0, and the impedance seen from the first bias pulse signal is high, and the second bias generating unit 31c side appears to be a wall. As a result, the impedance seen from the first bias pulse signal in the second separation circuit 34c2 is set to Z LF1 Then, Z LF1 >>Z chamber holds true.

[0038] In this way, by setting the circuit constant of the first separation circuit 34b2 as described above, the first separation circuit 34b2 has an impedance Z LF2 is the plasma load impedance Z chamber This makes the first isolation circuit 34b2 prevent the second bias pulse signal from being coupled from the second bias generator 31c ("LF2 Power → ×" in FIG. 3). As a result, the LF2 power is supplied into the plasma processing chamber 10 via the power supply line 37, thereby preventing a decrease in the supply efficiency of the LF2 power.

[0039] Similarly, by setting the circuit constant of the second separation circuit 34c2 as described above, the second separation circuit 34c2 has an impedance Z LF1 is the plasma load impedance Z chamber This makes the second isolation circuit 34c2 prevent the first bias pulse signal from being coupled from the first bias generator 31b ("LF1 Power → ×" in FIG. 3). As a result, the LF1 power is supplied into the plasma processing chamber 10 via the power supply line 37, thereby preventing a decrease in the supply efficiency of the LF1 power.

[0040] With this configuration, pulse signals of two bias powers (LF1 power and LF2 power) having different frequencies can be efficiently supplied to the substrate support part 11.

[0041] [Etching method] Next, an etching method according to an embodiment will be described with reference to Fig. 4. Fig. 4 shows an example of the etching method MT according to an embodiment. The etching method MT is performed by a plasma processing apparatus 1, for example.

[0042] In the following, the etching target film will be described using the laminated film shown in FIG. 5 as an example. The laminated film in FIG. 5 is formed by laminating, from bottom to top, a polysilicon film 100 (Poly Si), a silicon oxide film 101 (SiO), an amorphous carbon film 102 (ACL (Amorphous Carbon Layer)) hard mask, and an organic film 103 soft mask. The organic film has a three-layer structure formed by laminating, from bottom to top, an SOC (Spin On Carbon) 103c, an SiON 103b, and an EUV (Extreme Ultraviolet) resist film 103a. However, the etching target film is not limited to the laminated film shown in FIG. 5. Furthermore, the organic film is not limited to three layers, and may be one layer or two or more layers. In the etching method for such a laminated film, the laminated film can be processed collectively using a single plasma processing apparatus 1.

[0043] The SOC 103c, SiON 103b, and resist film 103a are all thin films, and the amorphous carbon film 102 and silicon oxide film 101 are ten times thicker than these organic films. Therefore, a deep hole is etched in the amorphous carbon film 102 using the organic film 103 as a mask. A deep hole is further etched in the silicon oxide film 101 using the amorphous carbon film 102 as a mask. For this reason, when etching the silicon oxide film 101, the ion energy is controlled to a large extent.

[0044] The amorphous carbon film 102 is formed thick so that the mask of the amorphous carbon film 102 does not disappear before etching of the silicon oxide film 101 is completed. Furthermore, during etching, control is performed so that high plasma density and high ion energy are applied to the amorphous carbon film 102 and the silicon oxide film 101. Furthermore, plasma of a corrosive gas such as Cl2 gas or HBr gas is required for the polysilicon film 100.

[0045] On the other hand, when etching the organic film 103, the ion energy is controlled to be small because the organic film 103 is soft. As such, different specifications are required for etching each film type in the stacked film. For this reason, it has been impossible to process each film in the stacked film at once using a single plasma processing apparatus, and in some cases it has been necessary to etch each film in the stacked film using multiple plasma processing apparatuses according to the characteristics of each film type.

[0046] Therefore, in the etching method according to this embodiment, the combination of application methods by the source generating unit 31a, the first bias generating unit 31b, and the second bias generating unit 31c is changed. This allows two of the three signals, the source pulse signal, the first bias pulse signal, and the second bias pulse signal, to be combined. This makes it possible to etch each film in the stacked film according to its film type within a single plasma processing apparatus 1. As a result, it is no longer necessary to load and unload the substrate W from the plasma processing apparatus 1 according to the film type during etching, thereby improving productivity.

[0047] In the etching method according to this embodiment, the plasma processing apparatus 1 may have at least the following (1) to (5). (1) The plasma processing chamber 10 has a high-density plasma generating mechanism (ICP: induction coil antenna 14) or SWP (surface wave excitation slot antenna) on the upper side, and a mechanism for outputting high-frequency RF (27 MHz or higher) and low-frequency RF (2 MHz or lower) on the lower side. (2) The inner wall of the plasma processing chamber 10 is protected from corrosion by a thermally sprayed film such as yttria. (3) Pre-coating with SiO2, carbon, etc. is possible. (4) A mechanism for outputting medium frequency RF (13MHz) can also be added to the bottom. (5) The RF power supply unit 31 has a power supply capable of outputting at least one pulse for the upper and lower power supplies included in the RF power supply unit 31. Examples of the power supplies include a source generating unit 31a, a first bias generating unit 31b, and a second bias generating unit 31c.

[0048] An etching method MT executed in the plasma processing apparatus 1 that satisfies the above requirements will be described with reference to Fig. 4. This process is controlled by the control unit 2.

[0049] When this process starts, in step S1, the control unit 2 prepares a substrate on which a laminated film is formed, in which a polysilicon film 100, a silicon oxide film 101, an amorphous carbon film 102, and an organic film 103 are laminated as shown in FIG. 5 (referred to as "step a"). Next, in step S2, the control unit 2 determines the type of film to be etched. In determining the type of film to be etched, the first film type can be identified as the organic film 103 laminated at the top. The next film to be etched may be determined using an end point detection method that uses a spectroscope to detect the end point of etching, for example. However, the determination method is not limited to this.

[0050] If it is determined in step S2 that the film to be etched is the organic film 103, the process proceeds to step S3, where the control unit 2 supplies a source pulse signal to the antenna 14 and a first bias pulse signal to the substrate support unit 11. Next, in step S5, the control unit 2 controls the pressure inside the plasma processing chamber 10 to low to medium, supplies a first gas into the plasma processing chamber 10, and etches the organic film 103 on the substrate W with the plasma of the first gas (referred to as "step b"). The low pressure is in the range of approximately 10 mTorr (approximately 1.33 Pa) to approximately 20 mTorr (approximately 2.66 Pa), and the medium pressure is in the range of approximately 40 mTorr (approximately 5.33 Pa) to 60 mTorr (approximately 8.00 Pa). In etching the organic film 103, a CF-based gas is used as the first gas, and the SiON film 103b and the SOC film 103c are etched in this order in the pattern of the EUV resist film 103a.

[0051] Fig. 6 is a diagram showing an example of application of a pulse signal according to a film to be etched according to an embodiment. Fig. 7 is a diagram showing a schematic diagram of the ion flux, ion energy, and radical flux states in each mode according to an embodiment. The horizontal axis of Fig. 7 represents ion energy Ei, the vertical axis represents ion flux Γi (amount of ions), and the diagonal axis represents pressure (radical flux). The radical flux is determined by pressure, and the lower the pressure, the fewer radicals there are. The ion flux indicates plasma density.

[0052] In steps S3 and S5 of FIG. 4, the "ICP mode (a)" control of FIGS. 6(a) and 7 is performed. The reason for this is that the organic film 103 is very soft and thin. Therefore, when etching the organic film 103, as shown in FIG. 6(a), a source pulse signal with a frequency of 27 MHz is supplied from the source generation unit 31a to the antenna 14 to generate ICP mode plasma. Furthermore, a first bias pulse signal with a frequency of 40 MHz or 60 MHz is supplied from the first bias generation unit 31b to the substrate support unit 11. This allows for control so that the self-bias and ion energy are lowered by the first bias pulse signal with a frequency of 40 MHz or 60 MHz while generating ICP mode plasma, compared to the second bias pulse signal with a frequency of 400 kHz. This allows for reduced ion attraction. This increases the plasma density by generating ICP mode plasma; in other words, the ion flux is higher and the ion energy is lower, as shown in "ICP mode (a)" of FIG. 7. Furthermore, by controlling the pressure to a low to medium pressure, the radical flux can be controlled to a low to medium level. Note that in step S5 of Fig. 4, the control unit 2 may control the pressure to a medium to high pressure, thereby controlling the radical flux to a medium to high level. The high pressure is about 100 mTorr (about 13.33 Pa) or higher.

[0053] When etching a soft mask such as the organic film 103 in this manner, the source pulse signal is supplied to the antenna 14, and the first bias pulse signal is supplied to the substrate support part 11. However, when etching a soft mask such as the organic film 103, only the source pulse signal or only the first bias pulse signal may be supplied.

[0054] 4, if it is determined that the type of the film to be etched is the amorphous carbon film 102 or the polysilicon film 100, the process proceeds to step S9, where the control unit 2 supplies a source pulse signal to the antenna 14 and a second bias pulse signal to the substrate support unit 11. Next, in step S11, the control unit 2 determines whether the film is the amorphous carbon film 102 or the polysilicon film 100. If it is determined to be the amorphous carbon film 102, the process proceeds to step S13, and if it is determined to be the polysilicon film 100, the process proceeds to step S15. In S11, the determination can be made using a spectrometer.

[0055] If the film type is the amorphous carbon film 102, in step S13, the control unit 2 controls the plasma processing chamber 10 to a low to medium pressure, and etches the amorphous carbon film 102 with the plasma of the second gas (this is an example of the "c step"). In etching the amorphous carbon film 102, O gas or CO gas is used as the second gas, and etching is performed using the organic film 103 as a mask.

[0056] If the film type is the polysilicon film 100, in step S15, the control unit 2 controls the plasma processing chamber 10 to a medium to high pressure, and etches the polysilicon film 100 on the substrate W with plasma of the fourth gas (this is an example of the "c step"). In etching the polysilicon film 100, chlorine gas and bromine gas are used as the fourth gas, and etching is performed using the silicon oxide film 101 as a mask.

[0057] In steps S9, S13, or S15 of FIG. 4, the "ICP mode (c)" control of FIGS. 6(c) and 7 is performed. As shown in FIG. 6(c), a source pulse signal having a frequency of 27 MHz is supplied from the source generation unit 31a to the antenna 14 to generate ICP mode plasma. Furthermore, a second bias pulse signal having a frequency of 400 kHz is supplied from the second bias generation unit 31c to the substrate support unit 11. This allows for control so that the self-bias and ion energy are higher than those of the first bias pulse signal having a frequency of 40 MHz while generating ICP mode plasma. This allows for greater control of ion attraction. As a result, the ion energy is medium to high, and the ion flux is high, as shown in FIG. 7. Furthermore, in the case of etching the amorphous carbon film 102, the pressure can be controlled to a low to medium pressure, thereby controlling the radical flux to a low to medium range. When etching the amorphous carbon film 102, if the pressure is high, ions will be incident at an angle, making it difficult to perform deep and narrow etching. To avoid this, the pressure is controlled to a low to medium pressure when etching the amorphous carbon film 102. On the other hand, chemical etching is mainly performed when etching the polysilicon film 100. For this reason, the pressure is controlled to a high pressure (for example, 140 mTorr (18.7 Pa)) and the amount of radicals (radical flux) is increased to promote etching.

[0058] When etching a hard mask such as the amorphous carbon film 102 and the polysilicon film 100 in this manner, a source pulse signal is supplied to the antenna 14 and a second bias pulse signal is supplied to the substrate support portion 11 .

[0059] 4, if it is determined that the type of the film to be etched is the silicon oxide film 101, the process proceeds to step S17, where the control unit 2 supplies a first bias pulse signal and a second bias pulse signal to the substrate support unit 11. Next, in step S19, the control unit 2 controls the plasma processing chamber 10 to a low to medium pressure, and etches the silicon oxide film 101 on the substrate W with plasma of the third gas (referred to as "step d"). In etching the silicon oxide film 101, a CF-based gas is used as the third gas, and etching is performed using the amorphous carbon film 102 as a mask.

[0060] In steps S17 and S19 of FIG. 4, the "CCP mode (b)" control of FIGS. 6(b) and 7 is performed. As shown in FIG. 6(b), a first bias pulse signal having a frequency of 40 MHz or 60 MHz is supplied from the first bias generating unit 31b to the substrate support unit 11 to generate CCP mode plasma. Furthermore, a second bias pulse signal having a frequency of 400 KHz is supplied from the second bias generating unit 31c to the substrate support unit 11. Since no source pulse signal is supplied to the antenna 14, the power applied to the upper portion of the plasma processing chamber 10 is zero, resulting in capacitively coupled (CCP mode) control. The first bias pulse signal having a frequency of 40 MHz or 60 MHz and the second bias pulse signal having a frequency of 400 KHz are superimposed and supplied to the substrate support unit 11. Therefore, as shown in FIG. 7(b), the CCP mode has much higher ion energy than the ICP modes (a) and (c), resulting in very high ion energy. The pressure is controlled to a low to medium pressure, so that the ion flux is medium. As a result, a medium amount of ions are attracted with very high ion energy, and the silicon oxide film 101 is etched by the ion energy.

[0061] In CCP mode (b), the lower dual-frequency plasma is generated by the first bias pulse signal and the second bias pulse signal. The plasma is primarily generated by the first bias pulse signal with a frequency of 40 MHz or 60 MHz. The plasma generated in this mode is located lower (closer to the substrate support 11) than in ICP modes (a) and (c). Therefore, the plasma is more likely to disappear than the plasma generated at the top in ICP modes (a) and (c). A portion of the plasma is consumed and lost by the substrate support 11 or the sidewall of the plasma processing chamber 10. This results in a lower plasma generation efficiency than in ICP mode (a). As a result, high-density plasma is obtained in ICP modes (a) and (c), resulting in a high ion flux. CCP mode (b) produces a medium-density plasma with a moderate ion flux. Furthermore, the pressure is controlled to a low pressure of approximately 10 mTorr, and ions are incident approximately perpendicularly. To form deep holes by etching, a radical flux to promote chemical etching is not required, but ion energy is.

[0062] According to this, a first bias pulse signal of 40 MHz or 60 MHz and a second bias pulse signal of 400 KHz are used to etch a high aspect ratio silicon oxide film 101. The first bias pulse signal of 40 MHz or 60 MHz contributes to plasma generation. The second bias pulse signal of 400 KHz efficiently attracts ions from the plasma.

[0063] As explained above, according to the etching method MT, ICP mode (a), ICP mode (c), and CCP mode (b) are used for each film type. In this way, the frequency of the pulse signal for supplying power can be optimally switched depending on the characteristics of the film type.

[0064] In the "b step" in which the ICP mode (a) is controlled, a source pulse signal is supplied to the antenna 14, a first bias pulse signal is supplied to the substrate support portion 11, and the organic film 103 is etched.

[0065] The ICP mode (a) in Figure 9(A) is an example of a first plasma processing mode. In the first plasma processing mode, a first electrical signal indicated by HF is supplied to the antenna and a second electrical signal indicated by LF1 is supplied to at least one electrode without supplying a third electrical signal indicated by LF2 in Figure 9 to at least one electrode. The "b" process is an example of a process performed in the first plasma processing mode. In the first plasma processing mode, as shown in the lower part of Figure 9(A), a second electrical signal indicated by LF1 may be delayed by an offset time T with respect to the first electrical signal indicated by HF and supplied to at least one electrode.

[0066] In the "c step" in which the ICP mode (c) control is performed, a source pulse signal is supplied to the antenna 14, a second bias pulse signal is supplied to the substrate support portion 11, and the amorphous carbon film 102 and the polysilicon film 100 are etched.

[0067] The ICP mode (c) in Figure 9(C) is an example of a second plasma processing mode. In the second plasma processing mode, a first electrical signal indicated by HF is supplied to the antenna and a third electrical signal indicated by LF2 is supplied to at least one electrode without supplying a second electrical signal indicated by LF1 to at least one electrode. "Step c" is an example of a process performed in the second plasma processing mode. In the second plasma processing mode, as shown in the lower part of Figure 9(C), a third electrical signal indicated by LF2 may be delayed by an offset time T with respect to the first electrical signal indicated by HF and supplied to at least one electrode.

[0068] In the "d step" in which the CCP mode (b) control is performed, a first bias pulse signal and a second bias pulse signal are supplied to the substrate support part 11, and the silicon oxide film 101 is etched.

[0069] The CCP mode (b) in Figure 9(B) is an example of a third plasma processing mode. In the third plasma processing mode, a second electrical signal indicated by LF1 and a third electrical signal indicated by LF2 are supplied to at least one electrode without supplying a first electrical signal indicated by HF to the antenna. The "d process" is an example of a process performed in the third plasma processing mode. As shown in the lower part of Figure 9(B), the third electrical signal indicated by LF2 may be delayed by an offset time T relative to the second electrical signal indicated by LF1 and supplied to at least one electrode.

[0070] The control unit 2 is configured to control the first power supply, the second power supply, and the third power supply to selectively perform a first plasma processing mode, a second plasma processing mode, and a third plasma processing mode, where the first plasma processing mode and the second plasma processing mode are inductively coupled plasma processing modes, and the third plasma processing mode is a capacitively coupled plasma processing mode.

[0071] The third electrical signal indicated by LF2 may include a third RF signal. In the ICP mode, as shown in FIG. 10(A), three signals, the first RF signal, the second RF signal, and the third RF signal, may be supplied, or two signals, the first RF signal and the second RF signal, may be supplied, or two signals, the first RF signal and the third RF signal, may be supplied. The first RF signal, the second RF signal, and the third RF signal may be pulsed. In FIG. 10(A), the three RF signals, HF, LF1, and LF2, are synchronized and repeatedly turned on and off at a predetermined repetition period. In the CCP mode, as shown in FIG. 10(B), two signals, the second RF signal and the third RF signal, may be supplied. The second RF signal and the third RF signal may be pulsed. In FIG. 10(B), the two RF signals, LF1 and LF2, are repeatedly turned on and off at a predetermined repetition period.

[0072] The third RF frequency may be in the range of 100 kHz to 13.56 MHz. The third electrical signal includes a third RF signal, and the first RF signal, designated HF, may be a continuous wave as shown in FIG. 11(A), and the second RF signal and the third RF signal may be pulsed. The third electrical signal includes a DC signal, and the DC signal may include a sequence of pulses having a first voltage level during a first state of a repetition period. The DC signal may be supplied instead of the RF signal at LF1 shown in FIG. 9(A). The DC signal may include a sequence of pulses S having a first voltage level during a first state of a repetition period P. The RF signal at LF2 may also be supplied instead of an RF signal. The DC signal may include a sequence of pulses having a first voltage level during a first state of a repetition period.

[0073] The first voltage level may have negative polarity. The sequence of pulses may be in the range of 100 kHz to 1 MHz. The DC signal may have a second voltage level during a second state of the repetition period, and the absolute value of the second voltage level may be less than the absolute value of the first voltage level. The at least one electrode may include a first electrode, and the second electrical signal and the third electrical signal may be supplied to the first electrode. The at least one electrode may include a first electrode and a second electrode, and the second electrical signal may be supplied to the first electrode, and the third electrical signal may be supplied to the second electrode.

[0074] The "b step" and the "c step" are examples of an inductively coupled plasma processing mode, in which a first electrical signal is supplied to the antenna and a second electrical signal and / or a third electrical signal is supplied to at least one electrode.

[0075] The "d step" is an example of a capacitively coupled plasma processing mode. The capacitively coupled plasma processing mode is a mode in which the second electric signal and the third electric signal are supplied to at least one electrode without supplying the first electric signal to the antenna.

[0076] The control unit 2 is configured to control the first power supply, the second power supply, and the third power supply to selectively perform an inductively coupled plasma processing mode and a capacitively coupled plasma processing mode.

[0077] The third electrical signal may include a third RF signal, and the first RF signal, the second RF signal, and the third RF signal may be pulsed. The third RF frequency may be in the range of 100 kHz to 13.56 MHz. The third electrical signal may include a third RF signal, and the first RF signal may be continuous wave, and the second RF signal and the third RF signal may be pulsed. The third electrical signal may include a DC signal, and the DC signal may include a sequence of pulses having a first voltage level during a first state of a repeating period. The first voltage level may have negative polarity. The sequence of pulses may have a pulse frequency in the range of 100 kHz to 1 MHz. The DC signal has a second voltage level during a second state of a repeating period, and the absolute value of the second voltage level may be less than the absolute value of the first voltage level. The at least one electrode may include a first electrode, and the second electrical signal and the third electrical signal may be supplied to the first electrode.

[0078] The etching method according to this embodiment can be applied to etching a laminated film including at least two of an organic film, a silicon nitride film (SiN), a carbon film such as amorphous carbon, a silicon oxide film, and a polysilicon film. For example, an organic film is etched under the control of the "b" process. A silicon oxide film and a silicon nitride film are etched under the control of the "d" process. A carbon film and a polysilicon film are etched under the control of the "c" process.

[0079] Then, depending on the type of film to be etched included in the laminated film, at least one of "process b" and "process c" is switched between "process d." This makes it possible to process laminated films including at least two or more films selected from organic films, silicon nitride films (SiN), carbon films such as amorphous carbon, silicon oxide films, and polysilicon films all at once using a single plasma processing apparatus 1.

[0080] [others] The second bias pulse signal may be a DC signal. The DC signal may have a rectangular pulse waveform, or may have a rectangular, trapezoidal, triangular, or combination thereof. As shown in FIG. 8 , the plasma processing apparatus 1 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In an embodiment, the bias DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a DC signal. The generated DC signal is applied to the conductive member of the substrate support 11. In an embodiment, the DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. The bias DC generator 32a may be provided in addition to the RF power supply 31 or may be provided instead of the second bias generator 31c.

[0081] As described above, the etching method and plasma processing apparatus 1 of this embodiment allow etching for multiple film types to be performed within a single plasma processing apparatus. The etching method and plasma processing apparatus according to the presently disclosed embodiments should be considered to be illustrative in all respects and not restrictive. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways within a consistent range, and can be combined within a consistent range.

[0082] The above-disclosed embodiments include, for example, the following aspects.

[0083] (Appendix 1) a plasma processing chamber; a substrate support disposed within the plasma processing chamber; an antenna disposed on an upper portion of the plasma processing chamber; a source generator configured to generate a source pulse signal and provide the source pulse signal to the antenna; a first bias generating unit configured to generate a first bias pulse signal and supply the first bias pulse signal to the substrate support, the first bias generating unit supplying the first bias pulse signal at a frequency lower than a frequency of the source pulse signal; a second bias generating unit configured to generate a second bias pulse signal and supply the second bias pulse signal to the substrate support unit, the second bias generating unit supplying the second bias pulse signal at a frequency lower than a frequency of the first bias pulse signal, (a) preparing a substrate on which a laminated film including multiple types of films is formed; (b) applying the source pulse signal to the antenna and the first bias pulse signal to the substrate support to etch the substrate; (c) applying the source pulse signal to the antenna and the second bias pulse signal to the substrate support to etch the substrate; (d) supplying the first bias pulse signal and the second bias pulse signal to the substrate support part to etch the substrate.

[0084] (Appendix 2) (e) determining the type of film to be etched among the films included in the laminated film; An etching method according to appendix 1, wherein at least one of the steps (b) and (c) is switched between the step (d) and the step (d) depending on the type of film determined in the step (e).

[0085] (Appendix 3) 3. The etching method according to claim 1, wherein the steps (b), (c), and (d) can be performed in the same plasma processing chamber.

[0086] (Appendix 4) The laminated film is formed by laminating a polysilicon film, a silicon oxide film, an amorphous carbon film, and an organic film in this order from the bottom, In the step (b), the organic film is etched, In the step (c), the amorphous carbon film and the polysilicon film are etched, 4. The etching method according to any one of claims 1 to 3, wherein in the step (d), a silicon oxide film is etched.

[0087] (Appendix 5) 5. The etching method according to claim 4, wherein the organic film is composed of three layers, in that order from the bottom, of SOC (Spin On Carbon), SiON, and EUV (Extreme Ultraviolet).

[0088] (Appendix 6) 6. The etching method according to any one of claims 1 to 5, wherein the source pulse signal, the first bias pulse signal, and the second bias pulse signal are radio frequency (RF) signals.

[0089] (Appendix 7) 7. The etching method according to claim 1, wherein the second bias pulse signal is a DC signal.

[0090] (Appendix 8) a plasma processing chamber; a substrate support disposed within the plasma processing chamber; an antenna disposed on an upper portion of the plasma processing chamber; a source generator configured to generate a source pulse signal and provide the source pulse signal to the antenna; a first bias generating unit configured to generate a first bias pulse signal and supply the first bias pulse signal to the substrate support, the first bias generating unit supplying the first bias pulse signal at a frequency lower than a frequency of the source pulse signal; a second bias generating unit configured to generate a second bias pulse signal and supply the second bias pulse signal to the substrate support unit, the second bias generating unit supplying the second bias pulse signal at a frequency lower than a frequency of the first bias pulse signal; and a control unit; The control unit (a) preparing a substrate on which a laminated film including multiple types of films is formed; (b) applying the source pulse signal to the antenna and the first bias pulse signal to the substrate support to etch the substrate; (c) applying the source pulse signal to the antenna and the second bias pulse signal to the substrate support to etch the substrate; (d) supplying the first bias pulse signal and the second bias pulse signal to the substrate support part to etch the substrate.

[0091] Furthermore, the above-disclosed embodiments include, for example, the following aspects.

[0092] (Appendix 1) a plasma processing chamber; a substrate support disposed within the plasma processing chamber and including at least one electrode; an antenna positioned above the plasma processing chamber; a first power source configured to provide a first electrical signal to the antenna, the first electrical signal including a first RF signal having a first RF frequency; a second power supply configured to supply a second electrical signal to the at least one electrode, the second electrical signal comprising a second RF signal having a second RF frequency; and a third power supply configured to supply a third electrical signal to the at least one electrode, the third electrical signal comprising a third RF signal having a third RF frequency lower than the first RF frequency and the second RF frequency or a DC signal; a control unit configured to control the first power supply, the second power supply, and the third power supply to selectively perform a first plasma processing mode, a second plasma processing mode, and a third plasma processing mode; the first plasma processing mode includes supplying the first electrical signal to the antenna and the second electrical signal to the at least one electrode without supplying the third electrical signal to the at least one electrode; the second plasma processing mode includes supplying the first electrical signal to the antenna and supplying the third electrical signal to the at least one electrode without supplying the second electrical signal to the at least one electrode; the third plasma processing mode includes supplying the second electrical signal and the third electrical signal to the at least one electrode without supplying the first electrical signal to the antenna; Plasma processing equipment.

[0093] (Appendix 2) the first plasma treatment mode and the second plasma treatment mode are inductively coupled plasma treatment modes; 2. The plasma processing apparatus according to claim 1, wherein the third plasma processing mode is a capacitively coupled plasma processing mode.

[0094] (Appendix 3) the third electrical signal includes the third RF signal; 3. The plasma processing apparatus according to claim 1, wherein the first RF signal, the second RF signal, and the third RF signal are pulsed.

[0095] (Appendix 4) 4. The plasma processing apparatus according to claim 1, wherein the third RF frequency is within a range of 100 kHz to 13.56 MHz.

[0096] (Appendix 5) the third electrical signal includes the third RF signal; the first RF signal is a continuous wave; 5. The plasma processing apparatus according to claim 1, wherein the second RF signal and the third RF signal are pulsed.

[0097] (Appendix 6) the third electrical signal includes the DC signal; 6. The plasma processing apparatus of claim 1, wherein the DC signal includes a sequence of pulses having a first voltage level during a first state of a repeating period.

[0098] (Appendix 7) 7. The plasma processing apparatus of claim 6, wherein the first voltage level has a negative polarity.

[0099] (Appendix 8) 8. The plasma processing apparatus according to claim 6 or 7, wherein the sequence of pulses has a pulse frequency in the range of 100 kHz to 1 MHz.

[0100] (Appendix 9) 9. The plasma processing apparatus of claim 8, wherein the DC signal has a second voltage level during a second state of the repeating period, and the absolute value of the second voltage level is less than the absolute value of the first voltage level.

[0101] (Appendix 10) the at least one electrode includes a first electrode; 10. The plasma processing apparatus according to claim 1, wherein the second electric signal and the third electric signal are supplied to the first electrode.

[0102] (Appendix 11) the at least one electrode includes a first electrode and a second electrode; the second electrical signal is supplied to the first electrode; 10. The plasma processing apparatus according to claim 1, wherein the third electric signal is supplied to the second electrode.

[0103] (Appendix 12) a plasma processing chamber; a substrate support disposed within the plasma processing chamber and including at least one electrode; an antenna positioned above the plasma processing chamber; a first power source configured to provide a first electrical signal to the antenna, the first electrical signal including a first RF signal having a first RF frequency; a second power supply configured to supply a second electrical signal to the at least one electrode, the second electrical signal comprising a second RF signal having a second RF frequency; and a third power supply configured to supply a third electrical signal to the at least one electrode, the third electrical signal comprising a third RF signal having a third RF frequency lower than the first RF frequency and the second RF frequency or a DC signal; a control unit configured to control the first power supply, the second power supply, and the third power supply to selectively perform an inductively coupled plasma processing mode and a capacitively coupled plasma processing mode; the inductively coupled plasma processing mode includes supplying the first electrical signal to the antenna and supplying the second electrical signal and / or the third electrical signal to the at least one electrode; the capacitively coupled plasma processing mode provides the second electrical signal and the third electrical signal to the at least one electrode without providing the first electrical signal to the antenna; Plasma processing equipment.

[0104] (Appendix 13) the third electrical signal includes the third RF signal; 13. The plasma processing apparatus of claim 12, wherein the first RF signal, the second RF signal, and the third RF signal are pulsed.

[0105] (Appendix 14) 14. The plasma processing apparatus according to claim 12, wherein the third RF frequency is within a range of 100 kHz to 13.56 MHz.

[0106] (Appendix 15) the third electrical signal includes the third RF signal; the first RF signal is a continuous wave; 15. The plasma processing apparatus according to claim 12, wherein the second RF signal and the third RF signal are pulsed.

[0107] (Appendix 16) the third electrical signal includes the DC signal; 16. The plasma processing apparatus of claim 12, wherein the DC signal includes a sequence of pulses having a first voltage level during a first state of a repeat period.

[0108] (Appendix 17) 17. The plasma processing apparatus of claim 16, wherein the first voltage level has a negative polarity.

[0109] (Appendix 18) 18. The plasma processing apparatus according to claim 16, wherein the sequence of pulses has a pulse frequency in the range of 100 kHz to 500 kHz.

[0110] (Appendix 19) 19. The plasma processing apparatus of claim 18, wherein the DC signal has a second voltage level during a second state of the repeating period, and the absolute value of the second voltage level is less than the absolute value of the first voltage level.

[0111] (Appendix 20) the at least one electrode includes a first electrode; 20. The plasma processing apparatus according to any one of claims 12 to 19, wherein the second electric signal and the third electric signal are supplied to the first electrode.

[0112] This application claims priority from basic application No. 2021-150606, filed with the Japan Patent Office on September 15, 2021, the entire contents of which are incorporated herein by reference. [Explanation of symbols]

[0113] 1. Plasma processing equipment 2. Control section 10 Plasma Processing Chamber 11 Substrate support 14 Antenna 20 Gas supply unit 31 RF power supply section 31a Source generation section 31b First bias generating unit 31c Second bias generation unit 34 Impedance matching circuit 40 Exhaust System 100 Polysilicon film 101 Silicon oxide film 102 Amorphous carbon film 103 Organic film

Claims

1. a plasma processing chamber; a substrate support disposed within the plasma processing chamber and including at least one electrode; an antenna positioned above the plasma processing chamber; a first power source configured to provide a first electrical signal to the antenna, the first electrical signal including a first RF signal having a first RF frequency; a second power supply configured to supply a second electrical signal to the at least one electrode, the second electrical signal comprising a second RF signal having a second RF frequency; and a third power supply configured to supply a third electrical signal to the at least one electrode, the third electrical signal comprising a third RF signal having a third RF frequency lower than the first RF frequency and the second RF frequency or a DC signal; a control unit configured to control the first power supply, the second power supply, and the third power supply to selectively perform a first plasma processing mode, a second plasma processing mode, and a third plasma processing mode; the first plasma treatment mode includes supplying the first electrical signal to the antenna and the second electrical signal to the at least one electrode without supplying the third electrical signal to the at least one electrode; the second plasma processing mode includes supplying the first electrical signal to the antenna and supplying the third electrical signal to the at least one electrode without supplying the second electrical signal to the at least one electrode; the third plasma processing mode includes supplying the second electrical signal and the third electrical signal to the at least one electrode without supplying the first electrical signal to the antenna; Plasma processing equipment.

2. the first plasma processing mode and the second plasma processing mode are inductively coupled plasma processing modes, The plasma processing apparatus of claim 1 , wherein the third plasma processing mode is a capacitively coupled plasma processing mode.

3. the third electrical signal includes the third RF signal; The plasma processing apparatus of claim 1 , wherein the first RF signal, the second RF signal, and the third RF signal are pulsed.

4. 4. The plasma processing apparatus of claim 3, wherein the third RF frequency is within a range of 100 kHz to 13.56 MHz.

5. the third electrical signal includes the third RF signal; the first RF signal is a continuous wave; The plasma processing apparatus of claim 1 , wherein the second RF signal and the third RF signal are pulsed.

6. the third electrical signal includes the DC signal; The plasma processing apparatus of claim 1 , wherein the DC signal comprises a sequence of pulses having a first voltage level during a first state of a repeating period.

7. The plasma processing apparatus of claim 6 , wherein the first voltage level has a negative polarity.

8. The plasma processing apparatus of claim 7, wherein the sequence of pulses has a pulse frequency in the range of 100 kHz to 1 MHz.

9. 9. The plasma processing apparatus of claim 8, wherein the DC signal has a second voltage level during a second state of the repeating period, the absolute value of the second voltage level being less than the absolute value of the first voltage level.

10. the at least one electrode includes a first electrode; The plasma processing apparatus of claim 1 , wherein the second electric signal and the third electric signal are supplied to the first electrode.

11. the at least one electrode includes a first electrode and a second electrode; the second electrical signal is supplied to the first electrode; The plasma processing apparatus of claim 1 , wherein the third electrical signal is supplied to the second electrode.

12. a plasma processing chamber; a substrate support disposed within the plasma processing chamber and including at least one electrode; an antenna positioned above the plasma processing chamber; a first power source configured to provide a first electrical signal to the antenna, the first electrical signal including a first RF signal having a first RF frequency; a second power supply configured to supply a second electrical signal to the at least one electrode, the second electrical signal comprising a second RF signal having a second RF frequency; and a third power supply configured to supply a third electrical signal to the at least one electrode, the third electrical signal comprising a third RF signal having a third RF frequency lower than the first RF frequency and the second RF frequency or a DC signal; a control unit configured to control the first power supply, the second power supply, and the third power supply to selectively perform an inductively coupled plasma processing mode and a capacitively coupled plasma processing mode; the inductively coupled plasma processing mode includes supplying the first electrical signal to the antenna and supplying the second electrical signal and / or the third electrical signal to the at least one electrode; the capacitively coupled plasma processing mode provides the second electrical signal and the third electrical signal to the at least one electrode without providing the first electrical signal to the antenna; Plasma processing equipment.

13. the third electrical signal includes the third RF signal; The plasma processing apparatus of claim 12 , wherein the first RF signal, the second RF signal, and the third RF signal are pulsed.

14. 14. The plasma processing apparatus of claim 13, wherein the third RF frequency is in the range of 100 kHz to 13.56 MHz.

15. the third electrical signal includes the third RF signal; the first RF signal is a continuous wave; The plasma processing apparatus of claim 12 , wherein the second RF signal and the third RF signal are pulsed.

16. the third electrical signal includes the DC signal; The plasma processing apparatus of claim 12 , wherein the DC signal comprises a sequence of pulses having a first voltage level during a first state of a repeating period.

17. The plasma processing apparatus of claim 16 , wherein the first voltage level has a negative polarity.

18. 18. The plasma processing apparatus of claim 17, wherein the sequence of pulses has a pulse frequency in the range of 100 kHz to 1 MHz.

19. 20. The plasma processing apparatus of claim 18, wherein the DC signal has a second voltage level during a second state of the repeating period, the absolute value of the second voltage level being less than the absolute value of the first voltage level.

20. the at least one electrode includes a first electrode; The plasma processing apparatus of claim 12 , wherein the second electric signal and the third electric signal are supplied to the first electrode.

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