Dielectric composition and electronic component

Abstract

To provide a novel dielectric composition that has high sintering density even when sintered at relatively low temperature and yet has high relative dielectric constant.SOLUTION: Provided is a dielectric composition containing: a main component expressed by {BaxSr(1-x)}mTa4O12; and a first subcomponent, m satisfying a relationship of 1.70≤m≤2.05. The first subcomponent includes aluminum and manganese. When the content of the main component contained in the dielectric composition is set as 100 parts by mole, the content of aluminum contained in the dielectric composition is 5.0 to 20.0 parts by mole in terms of Al2O3, and the content of manganese contained in the dielectric composition is 1.0 to 4.5 parts by mole in terms of MnO.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a dielectric composition and an electronic component. [Background technology]

[0002] For example, as shown in Patent Document 1, a dielectric composition that does not contain lead or alkali metals and has a high relative dielectric constant has been developed.

[0003] However, new dielectric compositions that are being developed have the problem that high density dielectrics cannot be obtained unless they are fired at high temperatures. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-103671 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a novel dielectric composition which has a high sintered density even when fired at a relatively low temperature, and also has a high relative dielectric constant. [Means for solving the problem]

[0006] The dielectric composition according to the present invention is x Sr (1-x)} m Ta4O 12 and a first subcomponent, The m is 1.70≦m≦2.05, the first minor component is aluminum and manganese; When the content of the main component in the dielectric composition is 100 parts by mole, The aluminum content in the dielectric composition is 5.0 to 20.0 molar parts in terms of Al2O3, The manganese content in the dielectric composition is 1.0 to 4.5 parts by mol in terms of MnO.

[0007] The dielectric composition according to the present invention has a high sintered density and a high dielectric constant even when fired at a relatively low temperature. The reason for this is not entirely clear, but the following is thought to be the reason. It is believed that the effect of lowering the sintering start temperature is achieved by having m within the above range and the dielectric composition contain predetermined amounts of aluminum and manganese. This is thought to make it easier to obtain a high sintered density even when fired at a relatively low temperature, and also improve the dielectric constant.

[0008] The m preferably satisfies 1.70≦m≦1.90. This is believed to improve the wettability between the main component and the first subcomponent and lower the sintering start temperature. This allows for a higher sintered density even at low temperatures and also improves the relative dielectric constant.

[0009] Preferably, the dielectric composition contains magnesium as a second minor component, When the content of the main component in the dielectric composition is 100 parts by mole, The content of magnesium in the dielectric composition is 0.5 to 2.5 parts by mol in terms of MgO.

[0010] By including the second subcomponent in the dielectric composition within the above range, the sintering initiation temperature is further reduced, which further improves the sintered density and the relative dielectric constant.

[0011] Preferably, the dielectric composition contains at least one selected from the group consisting of vanadium, zirconium, and tungsten as a third minor component, When the content of the main component in the dielectric composition is 100 parts by mole, The content of vanadium in the dielectric composition is 0.25 to 1.0 molar parts in terms of V2O5, The content of zirconium in the dielectric composition is 0.25 to 1.0 molar parts in terms of ZrO2, The content of tungsten in the dielectric composition is 0.25 to 1.0 parts by mol in terms of WO3.

[0012] By including the third subcomponent in the dielectric composition within the above range, the effect of improving reduction resistance can be obtained, resulting in a further improvement in resistivity.

[0013] The dielectric composition according to the present invention is preferably substantially free of niobium, alkali metals and lead.

[0014] Dielectric compositions exhibiting a high relative dielectric constant include (Sr,Ba)Nb2O6, which is mainly composed of niobium, (Na,K)NbO3, which contains alkali metals, and Pb(Zr,Ti)O3, which contains lead.

[0015] The dielectric composition according to the present invention is substantially free of niobium, and therefore oxygen defects are unlikely to occur. In other words, changes in valence are suppressed. Therefore, even when subjected to reduction firing, the valence is unlikely to change, and a decrease in resistivity is suppressed, which is believed to enable the composition to exhibit high resistivity over a wide temperature range. For the same reason, it is also believed that the composition can exhibit low dielectric loss.

[0016] Furthermore, since the dielectric composition according to the present invention is substantially free of alkali metals, deviations in the composition of the dielectric composition and contamination of the furnace due to evaporation of alkali metals can be prevented.

[0017] Furthermore, although the use of lead is restricted by the RoHS (Restriction of Hazardous Substances Directive) and the like, the dielectric composition according to the present invention is substantially free of lead.

[0018] Moreover, an electronic device according to the present invention comprises the above-mentioned dielectric composition. [Brief explanation of the drawings]

[0019] [Figure 1] FIG. 1 is a schematic cross-sectional view of a multilayer ceramic capacitor according to one embodiment of the present invention. [Figure 2] FIG. 2 is a schematic cross-sectional view of a thin film capacitor according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0020] [First embodiment] < Multilayer ceramic capacitors > FIG. 1 shows a multilayer ceramic capacitor 1 as an example of an electronic component according to this embodiment. The multilayer ceramic capacitor 1 has an element body 10 configured by alternately stacking dielectric layers 2 and internal electrode layers 3. A pair of external electrodes 4 is formed on both ends of the element body 10, and is electrically connected to the internal electrode layers 3 alternately arranged inside the element body 10. There are no particular restrictions on the shape of the element body 10, but it is usually a rectangular parallelepiped. There are also no particular restrictions on the dimensions of the element body 10, and the dimensions may be appropriate depending on the application.

[0021] < Dielectric layer > The dielectric layer 2 is made of a dielectric composition according to this embodiment, which will be described later.

[0022] The thickness per layer of the dielectric layer 2 (interlayer thickness) is not particularly limited and can be set according to the desired properties, application, etc. Usually, the interlayer thickness is preferably 30 μm or less, more preferably 15 μm or less, and even more preferably 10 μm or less.

[0023] < internal electrode layer > In this embodiment, the internal electrode layers 3 are stacked so that their ends are alternately exposed on the surfaces of two opposing end faces of the element body 10 .

[0024] The conductive material contained in the internal electrode layer 3 is not particularly limited. Examples of metals used as the conductive material include palladium, platinum, silver-palladium alloy, nickel, nickel-based alloy, copper, and copper-based alloy. Note that nickel, nickel-based alloy, copper, or copper-based alloy may contain trace components such as phosphorus and / or sulfur in an amount of about 0.1 mass % or less. The internal electrode layer 3 may also be formed using a commercially available electrode paste. The thickness of the internal electrode layer 3 may be determined appropriately depending on the application, etc.

[0025] < external electrode > There are no particular restrictions on the conductive material contained in the external electrodes 4. For example, known conductive materials such as nickel, copper, tin, silver, palladium, platinum, gold, or alloys of these, conductive resins, etc. may be used. The thickness of the external electrodes 4 may be determined appropriately depending on the application, etc.

[0026] < Dielectric composition > The dielectric composition constituting the dielectric layer 2 according to this embodiment contains, as main components, at least one of barium and strontium, and tantalum.

[0027] The main component of the dielectric composition according to this embodiment preferably contains strontium, and more preferably contains both strontium and barium.

[0028] The main component of the dielectric composition according to this embodiment is {Ba x Sr (1-x)} m Ta4O 12 It is expressed as:

[0029] x is preferably 0.75 or less, more preferably less than 0.75, and even more preferably 0.1 to 0.50.

[0030] Preferably, m satisfies 1.70≦m≦2.05, and more preferably 1.70≦m≦1.90.

[0031] The crystal system of the main component of the dielectric composition according to this embodiment is not particularly limited, but is preferably a tetragonal or orthorhombic system, and more preferably a tetragonal system.

[0032] The main component is a component that occupies 80 to 99.5 parts by mol when the elements other than oxygen contained in the dielectric composition are taken as 100 parts by mol.

[0033] Furthermore, the dielectric composition according to this embodiment is substantially free of niobium, alkali metals, and lead. "Substantially free of niobium, alkali metals, and lead" means that the total amount of "niobium, alkali metals, and lead" is 10 parts by mol or less, and preferably 5 parts by mol or less, when the total amount of elements other than oxygen contained in the dielectric composition is 100 parts by mol.

[0034] The dielectric composition according to this embodiment contains aluminum and manganese as a first minor component.

[0035] When the content of the main component in the dielectric composition is taken as 100 parts by mol, the content of aluminum in the dielectric composition is 5.0 to 20.0 parts by mol, and preferably 7.5 to 15.0 parts by mol, calculated as Al2O3 oxide. That is, the content of aluminum is calculated as oxide when the atomic valence of aluminum is taken as trivalent.

[0036] When the content of the main component in the dielectric composition is taken as 100 parts by mol, the content of manganese in the dielectric composition is 1.0 to 4.5 parts by mol, and preferably 1.5 to 3.5 parts by mol, calculated as MnO. That is, the content of manganese is calculated as an oxide when the atomic valence of manganese is taken as divalent.

[0037] The dielectric composition according to this embodiment preferably contains magnesium as a second minor component.

[0038] When the content of the main component in the dielectric composition is 100 parts by mole, the content of magnesium in the dielectric composition is 0.5 to 2.5 parts by mole in terms of MgO. That is, the content of magnesium is calculated as oxide when the valence of magnesium is set to be divalent.

[0039] The dielectric composition according to this embodiment preferably contains at least one selected from the group consisting of vanadium, zirconium, and tungsten as a third minor component.

[0040] When the content of the main component in the dielectric composition is taken as 100 parts by mol, the content of vanadium in the dielectric composition is 0.25 to 1.0 parts by mol in terms of V2O5. That is, the content of vanadium is calculated as oxide when the valence of vanadium is set to pentavalent.

[0041] When the content of the main component in the dielectric composition is 100 parts by mole, the content of zirconium in the dielectric composition is 0.25 to 1.0 parts by mole in terms of ZrO2. That is, the content of zirconium is calculated as oxide when the valence of zirconium is tetravalent.

[0042] When the content of the main component in the dielectric composition is taken as 100 parts by mole, the content of tungsten is 0.25 to 1.0 parts by mole in terms of WO. That is, the content of tungsten is calculated as an oxide when the atomic valence of tungsten is taken as hexavalent.

[0043] The dielectric composition according to this embodiment may contain silicon, calcium, chromium, rare earth elements, and the like in addition to the main component and the first to third subcomponents.

[0044] < Manufacturing method for multilayer ceramic capacitors > Next, an example of a method for manufacturing the multilayer ceramic capacitor 1 shown in FIG. 1 will be described.

[0045] In this embodiment, a powder of the main component and powders of the first to third subcomponents that constitute the dielectric composition are prepared. The method for producing the main component powder is not particularly limited, but it can be produced by a solid-phase reaction method such as calcination. The raw materials for each element that constitutes the main component powder or the powders of the first to third subcomponents are not particularly limited, and oxides of each element can be used. Also, various compounds that can produce oxides of each element by firing can be used.

[0046] The raw materials for the powder of the main component and the powders of the first to third subcomponents are weighed in a predetermined ratio, and then wet-mixed for a predetermined time using a ball mill or the like. The mixed powder is dried, and then heat-treated in the air at a temperature range of 700 to 1300°C to obtain calcined powders of the main component and the first to third subcomponents. The calcined powder may also be pulverized for a predetermined time using a ball mill or the like.

[0047] Next, a paste for producing a green chip is prepared. The calcined powder is kneaded with a solvent to form a paste for the dielectric layer. Known binders and solvents may be used.

[0048] The dielectric layer paste may contain additives such as a plasticizer and a dispersant, if necessary.

[0049] The internal electrode layer paste is obtained by kneading the above-mentioned raw materials of the conductive material, a binder, and a solvent. Known binders and solvents may be used. The internal electrode layer paste may contain additives such as co-materials and plasticizers as necessary.

[0050] The external electrode paste can be prepared in the same manner as the internal electrode layer paste.

[0051] Using each of the obtained pastes, green sheets and internal electrode patterns are formed, and these are laminated to obtain a green chip.

[0052] The obtained green chip is subjected to a binder removal treatment as required. The binder removal treatment conditions are, for example, a holding temperature of preferably 200 to 350°C.

[0053] After the binder removal process, the green chip is fired to obtain the element body 10. In this embodiment, the atmosphere during firing is not particularly limited, and the firing may be performed in air or in a reducing atmosphere. In this embodiment, the holding temperature during firing is, for example, 1200 to 1355°C.

[0054] After firing, the obtained element body 10 is subjected to a reoxidation treatment (annealing) as necessary. The annealing conditions are preferably, for example, such that the oxygen partial pressure during annealing is higher than the oxygen partial pressure during firing, and the holding temperature is 1150°C or lower.

[0055] The dielectric composition constituting the dielectric layer 2 of the element body 10 obtained as described above is the dielectric composition described above. The end faces of this element body 10 are polished, and an external electrode paste is applied and baked to form the external electrodes 4. Then, if necessary, a coating layer is formed on the surface of the external electrodes 4 by plating or the like.

[0056] In this manner, the multilayer ceramic capacitor 1 according to this embodiment is manufactured.

[0057] The dielectric composition according to this embodiment contains {Ba x Sr (1-x)} m Ta4O 12 By including the above-mentioned compound, m being within a predetermined range, and including predetermined amounts of aluminum and manganese as the first subcomponent, it is possible to obtain a dielectric composition having a high sintered density and a high relative dielectric constant even when the dielectric composition is fired and sintered at a relatively low temperature.

[0058] The reason for this is not entirely clear, but the following is thought to be the reason. It is believed that the effect of lowering the sintering start temperature is obtained by having m within the above range and the dielectric composition contain predetermined amounts of aluminum and manganese. This makes it easier to obtain a high sintered density even when sintered at a relatively low temperature, and also improves the relative dielectric constant.

[0059] Furthermore, according to this embodiment, it is possible to obtain a dielectric composition that is substantially free of niobium, alkali metals, and lead, and that exhibits high density, high relative dielectric constant, low dielectric loss, and high specific resistance.

[0060] The dielectric composition according to the present embodiment, which contains tantalum and is substantially free of niobium, tends to exhibit a higher dielectric constant, lower dielectric loss, and higher resistivity than conventional dielectric compositions that are free of tantalum and contain niobium. The reason for this is believed to be that tantalum oxide (Ta2O5) is less likely to develop oxygen defects than niobium oxide (Nb2O5).

[0061] Dielectric properties are characteristics that are assumed to be those of an insulator. Therefore, a dielectric composition is required to have high resistance so that it does not become a semiconductor or a conductor. As mentioned above, tantalum oxide (Ta2O5) is less likely to develop oxygen defects than niobium oxide (Nb2O5). In other words, the change in valence is controlled. For this reason, it is thought that the decrease in resistivity is suppressed and high resistivity can be exhibited over a wide temperature range. For the same reason, it is also thought that low dielectric loss can be exhibited.

[0062] [Second embodiment] < thin film capacitor > A schematic diagram of a thin film capacitor 11 according to this embodiment is shown in Fig. 2. In the thin film capacitor 11 shown in Fig. 2, a lower electrode 112 and a dielectric thin film 113 are formed in this order on a substrate 111, and an upper electrode 114 is provided on the surface of the dielectric thin film 113.

[0063] There are no particular restrictions on the material of the substrate 111, but using a silicon single crystal substrate is easy to obtain and cost-effective as the substrate 111. When flexibility is important, nickel foil or copper foil can also be used as the substrate.

[0064] There are no particular limitations on the materials for the lower electrode 112 and the upper electrode 114, as long as they function as electrodes. Examples include platinum, silver, and nickel. There are no particular limitations on the thickness of the lower electrode 112, and it is, for example, 0.01 to 10 μm. There are also no particular limitations on the thickness of the upper electrode 114, and it is, for example, 0.01 to 10 μm.

[0065] The composition of the dielectric composition constituting the dielectric thin film 113 according to this embodiment and the crystal system of the main component are the same as those in the first embodiment.

[0066] There is no particular limitation on the thickness of the dielectric thin film 113, but it is preferably 10 nm to 1 μm.

[0067] < Manufacturing method of thin film capacitor > Next, a method for manufacturing the thin film capacitor 11 will be described.

[0068] There are no particular limitations on the method for forming the thin film that will ultimately become the dielectric thin film 113. Examples include vacuum evaporation, sputtering, PLD (pulsed laser deposition), MO-CVD (metal organic chemical vapor deposition), MOD (metal organic decomposition), sol-gel, and CSD (chemical solution deposition).

[0069] Furthermore, the raw materials used in film formation may contain trace amounts of impurities or secondary components, but this is not a problem as long as the amounts do not significantly impair the performance of the thin film.Furthermore, the dielectric thin film 113 according to this embodiment may also contain trace amounts of impurities or secondary components to the extent that they do not significantly impair the performance.

[0070] In this embodiment, a film formation method using the PLD method will be described.

[0071] First, a silicon single crystal substrate is prepared as the substrate 111. Next, SiO2, TiO x Then, a film of platinum is formed on the lower electrode 112. There are no particular limitations on the method for forming the lower electrode 112. For example, sputtering or CVD may be used.

[0072] Next, a dielectric thin film 113 is formed by PLD on the lower electrode 112. Alternatively, a metal mask may be used to expose part of the lower electrode 112, forming an area where no thin film is formed.

[0073] In the PLD method, first, a target containing the constituent elements of the desired dielectric thin film 113 is placed in a film formation chamber. Next, a pulsed laser is irradiated onto the surface of the target. The strong energy of the pulsed laser instantly evaporates the surface of the target. The evaporated material is then deposited on a substrate placed opposite the target to form the dielectric thin film 113.

[0074] There is no particular limitation on the type of target, and it is possible to use an alloy or the like in addition to a metal oxide sintered body containing the constituent elements of the dielectric thin film 113 to be produced. Furthermore, it is preferable that each element is distributed evenly in the target, but the distribution may vary within a range that does not affect the quality of the resulting dielectric thin film 113.

[0075] The number of targets does not necessarily have to be one, and it is also possible to prepare and use multiple targets containing some of the constituent elements of the dielectric thin film 113. There are also no limitations on the shape of the target, and it is sufficient if the shape is suitable for the film formation apparatus to be used.

[0076] Furthermore, when using the PLD method, it is preferable to heat the substrate 111 with an infrared laser during film formation in order to crystallize the dielectric thin film 113. The heating temperature of the substrate 111 varies depending on the constituent elements and composition of the dielectric thin film 113 and the substrate 111, but film formation is performed by heating to, for example, 600 to 800°C. By maintaining the temperature of the substrate 111 at an appropriate temperature, the dielectric thin film 113 is more likely to crystallize and cracks that occur during cooling can be prevented.

[0077] Finally, the thin film capacitor 11 can be manufactured by forming the upper electrode 114 on the dielectric thin film 113. There is no particular limitation on the material of the upper electrode 114, and silver, gold, copper, etc. can be used. There is also no particular limitation on the method for forming the upper electrode 114. For example, it can be formed by vapor deposition or sputtering.

[0078] Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and it goes without saying that the present invention can be embodied in various different forms without departing from the spirit of the present invention.

[0079] In the above-described embodiment, the electronic component according to the present invention is described as a multilayer ceramic capacitor. However, the electronic component according to the present invention is not limited to a multilayer ceramic capacitor, and may be any electronic component having the above-described dielectric composition.

[0080] For example, it may be a single-plate ceramic capacitor in which a pair of electrodes is formed on a single-layer dielectric substrate made of the above-mentioned dielectric composition.

[0081] Furthermore, the electronic component according to the present invention may be a filter, a diplexer, a resonator, an oscillator, an antenna, or the like, in addition to a capacitor. [Example]

[0082] The present invention will be described in more detail below using examples and comparative examples, but the present invention is not limited to the following examples.

[0083] Powders of barium carbonate (BaCO3), strontium carbonate (SrCO3), and tantalum oxide (Ta2O5) were prepared as starting materials for the main components of the dielectric composition. x Sr (1-x)} m Ta4O 12 The starting materials for the prepared main components were weighed so that x in the composition of the main components represented by the formula was 0.5 in Tables 1 and 2, and as shown in Table 3 in Table 3, and so that m was as shown in Tables 1 to 3.

[0084] Furthermore, raw material powders were prepared as starting materials for the first to third subcomponents of the dielectric composition, and the prepared starting materials for the first to third subcomponents were weighed out so that the contents of the first to third subcomponents after firing would be as shown in Tables 1 to 3. Note that the "contents of the first to third subcomponents" refer to the "contents of the first to third subcomponents in the dielectric composition converted into predetermined oxides when the content of the main component in the dielectric composition is taken as 100 parts by mole."

[0085] Next, the weighed powders were wet mixed in a ball mill using ion-exchanged water as a dispersion medium, and the mixture was dried to obtain a mixed raw material powder. The mixed raw material powder was then heat-treated in air at a holding temperature of 900°C for 2 hours to obtain a calcined powder.

[0086] The calcined powder thus obtained was wet-pulverized in a ball mill using ion-exchanged water as a dispersion medium, and then dried to obtain a dielectric material.

[0087] To 100 parts by mass of the obtained dielectric raw material, 10 parts by mass of an aqueous solution containing 6 parts by mass of polyvinyl alcohol resin as a binder was added and granulated to obtain a granulated powder.

[0088] The obtained granulated powder was poured into a φ12 mm die and subjected to a pressure of 0.6 ton / cm 2 The material is pre-press molded at a pressure of 1.2 ton / cm. 2The mixture was pressed under a pressure of 1000 to obtain a disk-shaped green compact.

[0089] Next, the obtained green molded body was subjected to a binder removal treatment, firing, and annealing under the following conditions to obtain a device body.

[0090] The binder removal treatment conditions were as follows: holding temperature: 400°C, temperature holding time: 2 hours, atmosphere: air.

[0091] The firing conditions were: holding temperature: 1350°C, temperature holding time: 2 hours, atmosphere: humidified N2 + H2 mixed gas (oxygen partial pressure 10 -12 A wetter was used to humidify the atmospheric gas during firing.

[0092] The annealing conditions were: holding temperature: 1050°C, temperature holding time: 2 hours, atmospheric gas: humidified N2 gas (oxygen partial pressure: 10 -7 A wetter was used to moisten the atmospheric gas during annealing.

[0093] The sintered density, dielectric constant, and resistivity of the obtained sintered body (dielectric composition) were examined by the following methods. To measure the dielectric constant and resistivity, an In-Ga electrode was applied to the above dielectric composition (sintered body) to obtain a disk-shaped ceramic capacitor sample (capacitor sample).

[0094] < Sintered Density > The sintered density of the dielectric composition was measured as follows. First, the volume V of the dielectric composition was calculated. Next, the mass M of the disk-shaped dielectric composition was measured, and the sintered density of the dielectric composition was obtained by calculating M / V. The results are shown in Tables 1 to 3.

[0095] < relative permittivity > A signal with a frequency of 1 kHz and an input signal level (measurement voltage) of 1 Vrms was input to the capacitor sample at room temperature (20°C) using a digital LCR meter (4284A manufactured by YHP Corporation) to measure the capacitance C. The relative dielectric constant was then calculated based on the thickness of the dielectric composition, the effective electrode area, and the capacitance C obtained as a result of the measurement. The results are shown in Tables 1 to 3.

[0096] < specific resistance > The insulation resistance of the capacitor samples was measured at a reference temperature (25°C) using a digital resistance meter (R8340 manufactured by ADVANTEST). The specific resistance was calculated from the obtained insulation resistance, the effective electrode area, and the thickness of the dielectric composition. The results are shown in Tables 1 to 3.

[0097] [Table 1]

[0098] [Table 2]

[0099] [Table 3]

[0100] From Tables 1 to 3, {Ba x Sr (1-x)} m Ta4O 12 In the case where m is 1.70≦m≦2.05, the aluminum content is 5.0 to 20.0 molar parts calculated as Al2O3, and the manganese content is 1.0 to 4.5 molar parts calculated as MnO (sample numbers 5 to 11, 16 to 20, 24 to 28, 30 to 49, and 50 to 53), the sintered density is 6.00 g / cm 3 The dielectric constant is 80 or more, and the resistivity is 1.0 × 10 11 It was confirmed that this was the case.

[0101] From Tables 1 to 3, {Ba xSr (1-x)} m Ta4O 12 m is 1.70≦m≦ ≦1.90, the aluminum content was 5.0 to 20.0 molar parts in terms of Al2O3, and the manganese content was 1.0 to 4.5 molar parts in terms of MnO (sample numbers 5 to 8, 33 to 49, and 50 to 53), the sintered density was 6.50 g / cm 3 The dielectric constant is 100 or more, and the resistivity is 1.0 × 10 11 It was confirmed that this was the case.

[0102] From Tables 1 to 3, {Ba x Sr (1-x)} m Ta4O 12 In the case where m is 1.70≦m≦1.90, the aluminum content is 5.0 to 20.0 molar parts calculated as Al2O3, the manganese content is 1.0 to 4.5 molar parts calculated as MnO, and the magnesium content is 0.5 to 2.5 molar parts calculated as MgO (sample numbers 37 to 39 and 41 to 49), the sintered density is 7.00 g / cm 3 The dielectric constant is 120 or more, and the resistivity is 1.0 × 10 11 It was confirmed that this was the case.

[0103] From Tables 1 to 3, {Ba x Sr (1-x)} m Ta4O 12 In the case where m is 1.70≦m≦1.90, the aluminum content is 5.0 to 20.0 molar parts calculated as Al2O3, the manganese content is 1.0 to 4.5 molar parts calculated as MnO, the magnesium content is 0.5 to 2.5 molar parts calculated as MgO, and the content of at least one of vanadium, zirconium, and tungsten is 0.25 to 1.0 molar part calculated as a predetermined oxide (samples 41 to 49), the sintered density is 7.00 g / cm 3 The dielectric constant is 120 or more, and the resistivity is 1.0 × 10 12 It was confirmed that this was the case. [Explanation of symbols]

[0104] 1. Multilayer ceramic capacitor 10... Element body 2... Dielectric layer 3… Internal electrode layer 4... External electrode 11... Thin film capacitor 111... Circuit board 112... Lower electrode 113... Polycrystalline dielectric thin film 114...Top electrode

Claims

1. {Ba x Sr (1-x) } m Ta 4 O 12 A dielectric composition comprising a main component represented by the formula: and a first subcomponent, wherein x is 0.75 or less, and m is 1.70≦m≦2.05, the first minor component is aluminum and manganese; When the content of the main component in the dielectric composition is 100 parts by mole, The aluminum content in the dielectric composition is Al 2 O 3 converted to 5.0 to 20.0 molar parts, The dielectric composition has a manganese content of 1.0 to 4.5 parts by mole in terms of MnO.

2. 2. The dielectric composition according to claim 1, wherein m satisfies the condition 1.70≦m≦1.

90.

3. the dielectric composition contains magnesium as a second minor component, When the content of the main component in the dielectric composition is 100 parts by mole, 3. The dielectric composition according to claim 1, wherein the content of magnesium in the dielectric composition is 0.5 to 2.5 parts by mol in terms of MgO.

4. the dielectric composition includes, as a third minor component, at least one selected from the group consisting of vanadium, zirconium, and tungsten; When the content of the main component in the dielectric composition is 100 parts by mole, the dielectric composition contains 0.25 to 1.0 molar parts in terms of a predetermined oxide of at least one selected from the group consisting of vanadium, zirconium, and tungsten; The vanadium content is V 2 O 5 It is a conversion, The zirconium content is ZrO 2 It is a conversion, The tungsten content is WO 3 The dielectric composition according to any one of claims 1 to 3, wherein the converted value is 1 / 2.

5. An electronic component comprising the dielectric composition according to any one of claims 1 to 4.

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