Dielectric composition and electronic component

Abstract

To provide a novel dielectric composition having high sintering density and high relative permittivity, even when sintered at relatively low temperatures.SOLUTION: A dielectric composition comprises a main component represented by {BaxSr(1-x)}mTa4O12 and a first subcomponent, where: m is 1.95≤m≤2.40; the first subcomponent is silicon and magnesium; when a content of the main component in the dielectric composition is 100 pts.mol, a content of silicon in the dielectric composition is 7.5 to 15.0 pts.mol in SiO2 equivalent; and a content of magnesium in the dielectric composition is 5.0 to 22.5 pts.mol in MgO equivalent.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a dielectric composition and an electronic component. [Background technology]

[0002] For example, as shown in Patent Document 1, a dielectric composition that does not contain lead or alkali metals and has a high relative dielectric constant has been developed.

[0003] However, new dielectric compositions that are being developed have the problem that high density dielectrics cannot be obtained unless they are fired at high temperatures. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-103671 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a novel dielectric composition which has a high sintered density even when fired at a relatively low temperature, and also has a high relative dielectric constant. [Means for solving the problem]

[0006] The dielectric composition according to the present invention is x Sr (1-x)} m Ta4O 12 and a first subcomponent, The m is 1.95≦m≦2.40, the first minor component is silicon and magnesium; When the content of the main component in the dielectric composition is 100 parts by mole, The content of silicon in the dielectric composition is 7.5 to 15.0 parts by mol in terms of SiO2, and the content of magnesium in the dielectric composition is 5.0 to 22.5 parts by mol in terms of MgO.

[0007] The dielectric composition according to the present invention has a high sintered density and a high dielectric constant even when fired at a relatively low temperature. The reason for this is not entirely clear, but the following is thought to be the reason. It is believed that the effect of lowering the sintering start temperature is achieved by having m within the above range and the dielectric composition contain predetermined amounts of silicon and magnesium. This is thought to make it easier to obtain a high sintered density even when fired at a relatively low temperature, and also improve the dielectric constant.

[0008] The m preferably satisfies 2.10≦m≦2.40. This is believed to improve the wettability between the main component and the first subcomponent and lower the sintering start temperature. This allows for a higher sintered density even at low temperatures and also improves the relative dielectric constant.

[0009] Preferably, the dielectric composition includes at least one selected from the group consisting of manganese and rare earth elements as a second minor component, In the dielectric composition, at least one selected from the group consisting of manganese and rare earth elements satisfies a predetermined content in terms of a predetermined oxide, When the content of the main component in the dielectric composition is 100 parts by mole, The predetermined content of manganese in the dielectric composition is 0.5 to 7.0 molar parts in terms of MnO, The predetermined content of the rare earth element represented by RE in the dielectric composition is 0.5 to 5.0 molar parts in terms of RE2O3.

[0010] By including the second subcomponent in the dielectric composition within the above range, the sintering initiation temperature is further reduced. This further improves the sintered density and the dielectric constant. In addition, by including the second subcomponent in the dielectric composition within the above range, the effect of improving reduction resistance is obtained. As a result, the resistivity is further improved.

[0011] Preferably, the dielectric composition includes at least one selected from the group consisting of titanium, hafnium, niobium, and molybdenum as a third minor component, When the content of the main component in the dielectric composition is 100 parts by mole, the dielectric composition contains at least one selected from the group consisting of titanium, hafnium, niobium, and molybdenum in an amount of 0.25 to 1.0 molar parts in terms of a predetermined oxide; The titanium content is calculated as TiO2. The hafnium content is calculated as HfO2. The niobium content is calculated as Nb2O5. The molybdenum content is calculated as MoO3.

[0012] By including the third subcomponent in the dielectric composition within the above range, the relative dielectric constant is further improved.

[0013] The dielectric composition according to the present invention is preferably substantially free of alkali metals and lead.

[0014] Dielectric compositions exhibiting a high relative dielectric constant include (Na,K)NbO3 containing alkali metals and Pb(Zr,Ti)O3 containing lead.

[0015] Furthermore, since the dielectric composition according to the present invention is substantially free of alkali metals, deviations in the composition of the dielectric composition and contamination of the furnace due to evaporation of alkali metals can be prevented.

[0016] Furthermore, although the use of lead is restricted by the RoHS (Restriction of Hazardous Substances Directive) and the like, the dielectric composition according to the present invention is substantially free of lead.

[0017] Moreover, an electronic device according to the present invention comprises the above-mentioned dielectric composition. [Brief explanation of the drawings]

[0018] [Figure 1] FIG. 1 is a schematic cross-sectional view of a multilayer ceramic capacitor according to one embodiment of the present invention. [Figure 2] FIG. 2 is a schematic cross-sectional view of a thin film capacitor according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0019] [First embodiment] < Multilayer ceramic capacitors > FIG. 1 shows a multilayer ceramic capacitor 1 as an example of an electronic component according to this embodiment. The multilayer ceramic capacitor 1 has an element body 10 configured by alternately stacking dielectric layers 2 and internal electrode layers 3. A pair of external electrodes 4 is formed on both ends of the element body 10, and is electrically connected to the internal electrode layers 3 alternately arranged inside the element body 10. There are no particular restrictions on the shape of the element body 10, but it is usually a rectangular parallelepiped. There are also no particular restrictions on the dimensions of the element body 10, and the dimensions may be appropriate depending on the application.

[0020] < Dielectric layer > The dielectric layer 2 is made of a dielectric composition according to this embodiment, which will be described later.

[0021] The thickness per layer of the dielectric layer 2 (interlayer thickness) is not particularly limited and can be set according to the desired characteristics, application, etc. Usually, the interlayer thickness is preferably 30 μm or less, more preferably 15 μm or less, and even more preferably 10 μm or less.

[0022] < internal electrode layer > In this embodiment, the internal electrode layers 3 are stacked so that their ends are alternately exposed on the surfaces of two opposing end faces of the element body 10 .

[0023] The conductive material contained in the internal electrode layer 3 is not particularly limited. Examples of metals used as the conductive material include palladium, platinum, silver-palladium alloy, nickel, nickel-based alloy, copper, and copper-based alloy. Note that nickel, nickel-based alloy, copper, or copper-based alloy may contain trace components such as phosphorus and / or sulfur in an amount of about 0.1 mass % or less. The internal electrode layer 3 may also be formed using a commercially available electrode paste. The thickness of the internal electrode layer 3 may be determined appropriately depending on the application, etc.

[0024] < external electrode > There are no particular restrictions on the conductive material contained in the external electrodes 4. For example, known conductive materials such as nickel, copper, tin, silver, palladium, platinum, gold, or alloys of these, conductive resins, etc. may be used. The thickness of the external electrodes 4 may be determined appropriately depending on the application, etc.

[0025] < Dielectric composition > The dielectric composition constituting the dielectric layer 2 according to this embodiment contains at least one of barium and strontium, and tantalum as main components.

[0026] The main component of the dielectric composition according to this embodiment preferably contains strontium, and more preferably contains both strontium and barium.

[0027] The main component of the dielectric composition according to this embodiment is {Ba x Sr (1-x)} m Ta4O 12 It is expressed as:

[0028] x is preferably 0.75 or less, more preferably less than 0.75, and even more preferably 0.1 to 0.50.

[0029] Preferably, m satisfies 1.95≦m≦2.40, and more preferably 2.10≦m≦2.40.

[0030] The crystal system of the main component of the dielectric composition according to this embodiment is not particularly limited, but is preferably a tetragonal or orthorhombic system, and more preferably a tetragonal system.

[0031] In this embodiment, when the elements other than oxygen contained in the dielectric composition are taken as 100 parts by mol, the elements other than oxygen constituting the main component occupy 70 to 99.5 parts by mol.

[0032] Furthermore, the dielectric composition according to this embodiment is substantially free of alkali metals and lead. "Substantially free of alkali metals and lead" means that the total amount of "alkali metals and lead" is 10 parts by mol or less, and preferably 5 parts by mol or less, when the total amount of elements other than oxygen contained in the dielectric composition is 100 parts by mol.

[0033] The dielectric composition according to this embodiment contains silicon and magnesium as a first minor component.

[0034] When the content of the main component in the dielectric composition is 100 parts by mole, the content of silicon in the dielectric composition is 7.5 to 15.0 parts by mole, and preferably 10.0 to 13.5 parts by mole, calculated as SiO2 oxide. That is, the content of silicon is calculated as oxide when the valence of silicon is tetravalent.

[0035] When the content of the main component in the dielectric composition is taken as 100 parts by mol, the content of magnesium in the dielectric composition is 5.0 to 22.5 parts by mol, and preferably 7.0 to 12.5 parts by mol, calculated as MgO. That is, the content of magnesium is calculated as oxide when the valence of magnesium is taken as divalent.

[0036] The dielectric composition according to this embodiment preferably contains, as a second minor component, at least one selected from the group consisting of manganese and rare earth elements.

[0037] When the content of the main component in the dielectric composition is taken as 100 parts by mol, the content of manganese in the dielectric composition is 0.5 to 7.0 parts by mol in terms of MnO. That is, the content of manganese is calculated as an oxide when the atomic valence of manganese is taken as divalent.

[0038] Rare earth elements are represented by "RE." When the content of the main component in the dielectric composition is 100 parts by mole, the content of rare earth elements (RE) is 0.5 to 5.0 parts by mole in terms of RE2O3. In other words, the content of rare earth elements is calculated in terms of oxides when the atomic valence of the rare earth elements is trivalent.

[0039] The dielectric composition according to this embodiment preferably contains, as a third minor component, at least one selected from the group consisting of titanium, hafnium, niobium, and molybdenum.

[0040] Specifically, when the content of the main component in the dielectric composition is taken as 100 parts by mole, the dielectric composition preferably contains 0.25 to 1.0 parts by mole of at least one selected from the group consisting of titanium, hafnium, niobium, and molybdenum, calculated as a predetermined oxide.

[0041] The titanium content is calculated as TiO2, i.e., the titanium content is calculated as an oxide when the atomic valence of titanium is tetravalent.

[0042] The hafnium content is calculated as HfO2, i.e., the hafnium content is calculated as oxide when the atomic valence of hafnium is tetravalent.

[0043] The niobium content is calculated as Nb2O5, i.e., the niobium content is calculated as an oxide when the atomic valence of niobium is set to five.

[0044] The molybdenum content is calculated as MoO3, i.e., the molybdenum content is calculated as an oxide when the valence of molybdenum is assumed to be hexavalent.

[0045] The dielectric composition according to this embodiment may contain aluminum, calcium, chromium, vanadium, zirconium, tungsten, and the like in addition to the main component, first subcomponent, second subcomponent, and third subcomponent.

[0046] < Manufacturing method for multilayer ceramic capacitors > Next, an example of a method for manufacturing the multilayer ceramic capacitor 1 shown in FIG. 1 will be described.

[0047] In this embodiment, a powder of the main component and powders of the first, second, and third subcomponents that constitute the dielectric composition are prepared. The method for producing the main component powder is not particularly limited, but it can be produced by a solid-phase reaction method such as calcination. The raw materials for the elements that constitute the main component powder and the powders of the first, second, and third subcomponents are not particularly limited, and oxides of the respective elements can be used. Various compounds that can produce oxides of the respective elements by firing can also be used.

[0048] The raw materials for the powder of the main component and the powders of the first, second, and third subcomponents are weighed out in predetermined proportions and then wet-mixed for a predetermined time using a ball mill or the like. The mixed powder is dried and then heat-treated in the air at a temperature range of 700 to 1300°C to obtain calcined powders of the main component and the first, second, and third subcomponents. The calcined powder may also be pulverized for a predetermined time using a ball mill or the like.

[0049] Next, a paste for producing a green chip is prepared. The calcined powder is kneaded with a solvent to form a paste for the dielectric layer. Known binders and solvents may be used.

[0050] The dielectric layer paste may contain additives such as a plasticizer and a dispersant, if necessary.

[0051] The internal electrode layer paste is obtained by kneading the above-mentioned raw materials of the conductive material, a binder, and a solvent. Known binders and solvents may be used. The internal electrode layer paste may contain additives such as co-materials and plasticizers as necessary.

[0052] The external electrode paste can be prepared in the same manner as the internal electrode layer paste.

[0053] Using each of the obtained pastes, green sheets and internal electrode patterns are formed, and these are laminated to obtain a green chip.

[0054] The obtained green chip is subjected to a binder removal treatment as required. The binder removal treatment conditions are, for example, a holding temperature of preferably 200 to 350°C.

[0055] After the binder removal process, the green chip is fired to obtain the element body 10. In this embodiment, the atmosphere during firing is not particularly limited, and the firing may be performed in air or in a reducing atmosphere. In this embodiment, the holding temperature during firing is, for example, 1150 to 1250°C.

[0056] After firing, the obtained element body 10 is subjected to a reoxidation treatment (annealing) as necessary. The annealing conditions are preferably, for example, such that the oxygen partial pressure during annealing is higher than the oxygen partial pressure during firing, and the holding temperature is 1150°C or lower.

[0057] The dielectric composition constituting the dielectric layer 2 of the element body 10 obtained as described above is the dielectric composition described above. The end faces of this element body 10 are polished, and an external electrode paste is applied and baked to form the external electrodes 4. Then, if necessary, a coating layer is formed on the surface of the external electrodes 4 by plating or the like.

[0058] In this manner, the multilayer ceramic capacitor 1 according to this embodiment is manufactured.

[0059] The dielectric composition according to this embodiment contains {Ba x Sr (1-x)} m Ta4O 12 By including the above, m being within a predetermined range, and including predetermined amounts of silicon and magnesium as the first subcomponent, it is possible to obtain a dielectric composition having a high sintered density and a high relative dielectric constant even when the dielectric composition is fired and sintered at a relatively low temperature.

[0060] The reason for this is not entirely clear, but the following is thought to be the case. It is believed that the effect of lowering the sintering start temperature is achieved by having m within the above range and the dielectric composition contain a predetermined amount of silicon and magnesium. This makes it easier to obtain a high sintered density even when sintered at a relatively low temperature, and also improves the relative dielectric constant.

[0061] Furthermore, according to this embodiment, it is possible to obtain a dielectric composition that is substantially free of alkali metals and lead and exhibits high density, high relative dielectric constant, low dielectric loss, and high specific resistance.

[0062] [Second embodiment] < thin film capacitor > A schematic diagram of a thin film capacitor 11 according to this embodiment is shown in Fig. 2. In the thin film capacitor 11 shown in Fig. 2, a lower electrode 112 and a dielectric thin film 113 are formed in this order on a substrate 111, and an upper electrode 114 is provided on the surface of the dielectric thin film 113.

[0063] There are no particular restrictions on the material of the substrate 111, but using a silicon single crystal substrate is easy to obtain and cost-effective as the substrate 111. When flexibility is important, nickel foil or copper foil can also be used as the substrate.

[0064] There are no particular limitations on the materials for the lower electrode 112 and the upper electrode 114, as long as they function as electrodes. Examples include platinum, silver, and nickel. There are no particular limitations on the thickness of the lower electrode 112, and it is, for example, 0.01 to 10 μm. There are also no particular limitations on the thickness of the upper electrode 114, and it is, for example, 0.01 to 10 μm.

[0065] The composition of the dielectric composition constituting the dielectric thin film 113 according to this embodiment and the crystal system of the main component are the same as those in the first embodiment.

[0066] There is no particular limitation on the thickness of the dielectric thin film 113, but it is preferably 10 nm to 1 μm.

[0067] < Manufacturing method of thin film capacitor > Next, a method for manufacturing the thin film capacitor 11 will be described.

[0068] There are no particular limitations on the method for forming the thin film that will ultimately become the dielectric thin film 113. Examples include vacuum evaporation, sputtering, PLD (pulsed laser deposition), MO-CVD (metal organic chemical vapor deposition), MOD (metal organic decomposition), sol-gel, and CSD (chemical solution deposition).

[0069] Furthermore, the raw materials used in film formation may contain trace amounts of impurities or secondary components, but this is not a problem as long as the amounts do not significantly impair the performance of the thin film.Furthermore, the dielectric thin film 113 according to this embodiment may also contain trace amounts of impurities or secondary components to the extent that they do not significantly impair the performance.

[0070] In this embodiment, a film formation method using the PLD method will be described.

[0071] First, a silicon single crystal substrate is prepared as the substrate 111. Next, SiO2, TiO x Then, a film of platinum is formed on the lower electrode 112. There are no particular limitations on the method for forming the lower electrode 112. For example, sputtering or CVD may be used.

[0072] Next, a dielectric thin film 113 is formed by PLD on the lower electrode 112. Alternatively, a metal mask may be used to expose a portion of the lower electrode 112, forming an area where the thin film is not formed.

[0073] In the PLD method, first, a target containing the constituent elements of the desired dielectric thin film 113 is placed in a film formation chamber. Next, a pulsed laser is irradiated onto the surface of the target. The strong energy of the pulsed laser instantly evaporates the surface of the target. The evaporated material is then deposited on a substrate placed opposite the target to form the dielectric thin film 113.

[0074] There is no particular limitation on the type of target, and it is possible to use an alloy or the like in addition to a metal oxide sintered body containing the constituent elements of the dielectric thin film 113 to be produced. Furthermore, it is preferable that each element is distributed evenly in the target, but the distribution may vary within a range that does not affect the quality of the resulting dielectric thin film 113.

[0075] The number of targets does not necessarily have to be one, and it is also possible to prepare and use multiple targets containing some of the constituent elements of the dielectric thin film 113. There are also no limitations on the shape of the target, and it is sufficient if the shape is suitable for the film formation apparatus to be used.

[0076] Furthermore, when using the PLD method, it is preferable to heat the substrate 111 with an infrared laser during film formation in order to crystallize the dielectric thin film 113. The heating temperature of the substrate 111 varies depending on the constituent elements and composition of the dielectric thin film 113 and the substrate 111, but film formation is performed by heating to, for example, 600 to 800°C. By maintaining the temperature of the substrate 111 at an appropriate temperature, the dielectric thin film 113 is more likely to crystallize and cracks that occur during cooling can be prevented.

[0077] Finally, the thin film capacitor 11 can be manufactured by forming the upper electrode 114 on the dielectric thin film 113. There is no particular limitation on the material of the upper electrode 114, and silver, gold, copper, etc. can be used. There is also no particular limitation on the method for forming the upper electrode 114. For example, it can be formed by vapor deposition or sputtering.

[0078] Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and it goes without saying that the present invention can be embodied in various different forms without departing from the spirit of the present invention.

[0079] In the above-described embodiment, the electronic component according to the present invention is described as a multilayer ceramic capacitor. However, the electronic component according to the present invention is not limited to a multilayer ceramic capacitor, and may be any electronic component having the above-described dielectric composition.

[0080] For example, it may be a single-plate ceramic capacitor in which a pair of electrodes is formed on a single-layer dielectric substrate made of the above-mentioned dielectric composition.

[0081] Furthermore, the electronic component according to the present invention may be a filter, a diplexer, a resonator, an oscillator, an antenna, or the like, in addition to a capacitor. [Example]

[0082] The present invention will be described in more detail below using examples and comparative examples, but the present invention is not limited to the following examples.

[0083] Powders of barium carbonate (BaCO3), strontium carbonate (SrCO3), and tantalum oxide (Ta2O5) were prepared as starting materials for the main components of the dielectric composition. x Sr (1-x)} m Ta4O 12The starting materials for the prepared main components were weighed so that x in the composition of the main components represented by the formula was 0.5 in Tables 1 and 2, and as shown in Table 3 in Table 3, and so that m was as shown in Tables 1 to 3.

[0084] Furthermore, raw material powders were prepared as starting materials for the first, second, and third subcomponents of the dielectric composition, and the prepared starting materials for the first, second, and third subcomponents were weighed out so that the contents of the first, second, and third subcomponents after firing would be as shown in Tables 1 to 3. Note that the "contents of the first, second, and third subcomponents" refers to the "contents of the first, second, and third subcomponents in the dielectric composition converted into predetermined oxides when the content of the main component in the dielectric composition is taken as 100 parts by mole."

[0085] Next, the weighed powders were wet mixed in a ball mill using ion-exchanged water as a dispersion medium, and the mixture was dried to obtain a mixed raw material powder. The mixed raw material powder was then heat-treated in air at a holding temperature of 900°C for 2 hours to obtain a calcined powder.

[0086] The calcined powder thus obtained was wet-pulverized in a ball mill using ion-exchanged water as a dispersion medium, and then dried to obtain a dielectric material.

[0087] To 100 parts by mass of the obtained dielectric raw material, 10 parts by mass of an aqueous solution containing 6 parts by mass of polyvinyl alcohol resin as a binder was added and granulated to obtain a granulated powder.

[0088] The obtained granulated powder was poured into a φ12 mm die and subjected to a pressure of 0.6 ton / cm 2 The material is pre-press molded at a pressure of 1.2 ton / cm. 2 The mixture was pressed under a pressure of 1000 to obtain a disk-shaped green compact.

[0089] Next, the obtained green molded body was subjected to a binder removal treatment, firing, and annealing under the following conditions to obtain a device body.

[0090] The binder removal treatment conditions were as follows: holding temperature: 400°C, temperature holding time: 2 hours, atmosphere: air.

[0091] The firing conditions were: holding temperature: 1250°C, temperature holding time: 2 hours, atmosphere: humidified N2 + H2 mixed gas (oxygen partial pressure 10 -12 A wetter was used to humidify the atmospheric gas during firing.

[0092] The annealing conditions were: holding temperature: 1050°C, temperature holding time: 2 hours, atmospheric gas: humidified N2 gas (oxygen partial pressure: 10 -7 A wetter was used to moisten the atmospheric gas during annealing.

[0093] The sintered density, dielectric constant, and resistivity of the obtained sintered body (dielectric composition) were examined by the following methods. To measure the dielectric constant and resistivity, an In-Ga electrode was applied to the above dielectric composition (sintered body) to obtain a disk-shaped ceramic capacitor sample (capacitor sample).

[0094] < Sintered Density > The sintered density of the dielectric composition was measured as follows. First, the volume V of the dielectric composition was calculated. Next, the mass M of the disk-shaped dielectric composition was measured, and the sintered density of the dielectric composition was obtained by calculating M / V. The results are shown in Tables 1 to 3.

[0095] < relative permittivity > A signal with a frequency of 1 kHz and an input signal level (measurement voltage) of 1 Vrms was input to the capacitor sample at room temperature (20°C) using a digital LCR meter (4284A manufactured by YHP Corporation) to measure the capacitance C. The relative dielectric constant was then calculated based on the thickness of the dielectric composition, the effective electrode area, and the capacitance C obtained as a result of the measurement. The results are shown in Tables 1 to 3.

[0096] < specific resistance > The insulation resistance of the capacitor samples was measured at a reference temperature (25°C) using a digital resistance meter (R8340 manufactured by ADVANTEST). The specific resistance was calculated from the obtained insulation resistance, the effective electrode area, and the thickness of the dielectric composition. The results are shown in Tables 1 to 3.

[0097] [Table 1]

[0098] [Table 2]

[0099] [Table 3]

[0100] From Tables 1 to 3, {Ba x Sr (1-x)} m Ta4O 12 When m is 1.95≦m≦2.40, the silicon content is 7.5 to 15.0 molar parts converted into SiO2, and the magnesium content is 5.0 to 22.5 molar parts converted into MgO (sample numbers 5 to 11, 16 to 21, 25 to 32, 35 to 63, and 71 to 75), the sintered density is 6.50 g / cm 3 or more, the relative dielectric constant is 70 or more, and the resistivity is 1.0 × 10 11 It was confirmed that this was the case.

[0101] From Tables 1 to 3, {Ba x Sr (1-x)} m Ta4O 12 When m is 2.10≦m≦2.40, the silicon content is 7.5 to 15.0 molar parts in terms of SiO2, and the magnesium content is 5.0 to 22.5 molar parts in terms of MgO (sample numbers 8 to 11, 37 to 63, and 71 to 75), the sintered density is 7.00 g / cm 3 The dielectric constant is 100 or more, and the resistivity is 1.0 × 10 11It was confirmed that this was the case.

[0102] From Tables 1 to 3, {Ba x Sr (1-x)} m Ta4O 12 In the case where m is 2.10≦m≦2.40, the silicon content is 7.5 to 15.0 molar parts calculated as SiO2, the magnesium content is 5.0 to 22.5 molar parts calculated as MgO, and at least one selected from the group consisting of manganese and rare earth elements satisfies a predetermined content calculated as a predetermined oxide, the predetermined manganese content is 0.5 to 7.0 molar parts calculated as MnO, and the predetermined rare earth element (RE) content is 0.5 to 5.0 molar parts calculated as RE2O3 (sample numbers 42 to 50 and 52 to 63), the sintered density is 7.20 g / cm 3 The dielectric constant is 120 or more, and the resistivity is 1.0 × 10 12 It was confirmed that this was the case.

[0103] From Tables 1 to 3, {Ba x Sr (1-x)} m Ta4O 12 In the case where m is 2.10≦m≦2.40, the silicon content is 7.5 to 15.0 molar parts calculated as SiO2, the magnesium content is 5.0 to 22.5 molar parts calculated as MgO, and at least one selected from the group consisting of manganese and rare earth elements satisfies a predetermined content calculated as a predetermined oxide, the predetermined manganese content is 0.5 to 7.0 molar parts calculated as MnO, the predetermined rare earth element (RE) content is 0.5 to 5.0 molar parts calculated as RE2O3, and the content of at least one of titanium, hafnium, niobium, and molybdenum is 0.25 to 1.0 molar part calculated as a predetermined oxide (sample numbers 56 to 63), the sintered density is 7.20 g / cm 3 or more, the relative dielectric constant is 130 or more, and the resistivity is 1.0 × 10 12 It was confirmed that this was the case. [Explanation of symbols]

[0104] 1. Multilayer ceramic capacitor 10... Element body 2... Dielectric layer 3… Internal electrode layer 4... External electrode 11... Thin film capacitor 111... Circuit board 112... Lower electrode 113... Polycrystalline dielectric thin film 114...Top electrode

Claims

1. {Ba x Sr (1-x) } m Ta 4 O 12 and a first subcomponent, wherein x is 0.75 or less, and m is 1.95≦m≦2.40, the first minor component is silicon and magnesium; When the content of the main component in the dielectric composition is 100 parts by mole, The silicon content in the dielectric composition is SiO 2 converted to 7.5 to 15.0 molar parts, The dielectric composition has a magnesium content of 5.0 to 22.5 parts by mole in terms of MgO.

2. 2. The dielectric composition according to claim 1, wherein m satisfies the condition 2.10≦m≦2.

40.

3. the dielectric composition includes, as a second minor component, at least one selected from the group consisting of manganese and rare earth elements; In the dielectric composition, at least one selected from the group consisting of manganese and rare earth elements satisfies a predetermined content in terms of a predetermined oxide, When the content of the main component in the dielectric composition is 100 parts by mole, The predetermined content of manganese in the dielectric composition is 0.5 to 7.0 molar parts in terms of MnO, and the predetermined content of rare earth elements represented by RE in the dielectric composition is RE 2 O 3 3. The dielectric composition according to claim 1, wherein the amount is 0.5 to 5.0 parts by mole in terms of the total amount of the carboxylic acid.

4. the dielectric composition includes, as a third minor component, at least one selected from the group consisting of titanium, hafnium, niobium, and molybdenum; When the content of the main component in the dielectric composition is 100 parts by mole, the dielectric composition contains 0.25 to 1.0 molar parts in terms of a predetermined oxide of at least one selected from the group consisting of titanium, hafnium, niobium, and molybdenum; The titanium content is TiO 2 It is a conversion, The hafnium content is HfO 2 It is a conversion, Niobium content is Nb 2 O 5 It is a conversion, The molybdenum content is MoO 3 The dielectric composition according to any one of claims 1 to 3, wherein the converted value is 1 / 2.

5. An electronic component comprising the dielectric composition according to any one of claims 1 to 4.

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