Suction member, method of manufacturing suction member, processing device, and inspection device

Abstract

An adsorption member according to the present disclosure is provided with a substrate which is formed of a ceramic that is mainly composed of silicon carbide and a plurality of projected parts which are formed on the surface of the substrate; each of the projected parts comprises a stage part that has a stage surface on which an object to be processed is to be placed, and a support part that supports the stage part; the stage part is formed of a film which is mainly composed of at least one substance that is selected from among silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium and tantalum; and respective films of the projected parts are independent from each other.

Description

[Technical Field]

[0001] The present disclosure relates to an adsorption device such as a vacuum chuck or electrostatic chuck that holds a workpiece such as a semiconductor wafer. Materials , adsorption member Manufacturing method , processing equipment and inspection equipment Regarding. [Background technology]

[0002] Conventionally, a workpiece such as a semiconductor wafer is held on an attraction member such as a vacuum chuck or an electrostatic chuck in a manufacturing device or an inspection device. When the workpiece is placed on the mounting surface of the attraction member, particles generated by friction between the back surface of the workpiece and the mounting surface of the attraction member may adhere to the workpiece, or particles that have entered scratches, pores, etc. on the mounting surface of the attraction member may sporadically re-adhere to the workpiece due to disturbances such as vibrations.

[0003] To solve this problem, Patent Document 1 proposes a stage in which an yttria (Y2O3) film is formed on the surface on which the workpiece is placed. It also describes that this yttria (Y2O3) film has many protrusions made of Y2O3. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-23168 Summary of the Invention

[0005] The adsorption member of the present disclosure comprises a substrate made of ceramic containing silicon carbide as a main component, and a plurality of protrusions formed on the surface of the substrate, the protrusions having a mounting portion with a mounting surface for placing an object to be processed and a support portion for supporting the mounting portion, the mounting portion being made of a film containing at least one material selected from silicon carbide, diamond-like carbon (hereinafter referred to as DLC), amorphous silicon, molybdenum, chromium, and tantalum as a main component, and the film is independent of each other for each protrusion.

[0006] The method for manufacturing the adsorption member of the present disclosure includes steps performed in the following order. (1) forming recesses and protrusions, which are the remainders of the recesses, on the surface of a substrate made of ceramics containing silicon carbide as a main component; (2) A step of coating the recessed and protruding portions with a film containing, as a main component, at least one selected from silicon carbide, DLC, amorphous silicon, molybdenum, chromium, and tantalum. (3) A step of dividing the film by grinding and / or polishing the film until the upper surfaces of the convex portions are exposed. (4) A step of removing the protrusions to obtain a substrate and an adsorption member having protrusions.

[0007] The present disclosure provides a processing device and an inspection device that use the above-described suction member. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a partially cutaway perspective view schematically illustrating an embodiment of an adsorption member of the present disclosure. [Figure 2] FIG. 2 is an enlarged cross-sectional view of part A in FIG. [Figure 3A] FIG. 10 is a cross-sectional view showing another example of a protrusion according to the present disclosure. [Figure 3B] FIG. 10 is a cross-sectional view showing another example of a protrusion according to the present disclosure. [Figure 4A] FIG. 10 is a cross-sectional view showing yet another example of a protrusion according to the present disclosure. [Figure 4B] FIG. 10 is a cross-sectional view showing yet another example of a protrusion according to the present disclosure. [Figure 5A] ~ [Figure 5E] 1A to 1C are explanatory diagrams illustrating steps in a method for manufacturing an adsorption member according to the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0009] An adsorption member according to an embodiment of the present disclosure will be described below. Fig. 1 schematically shows an adsorption member 10 according to this embodiment.

[0010] The adsorption member 10 has a plurality of protrusions 2 formed on the upper surface (surface) of a disk-shaped substrate 1. FIG. 2 is an enlarged cross-sectional view of portion A in FIG. 1. The protrusions 2 are frustum-shaped, such as a truncated cone or a truncated triangular pyramid, and include a mounting portion 21 having a mounting surface 3 for mounting a workpiece (not shown) thereon, and a support portion 22 for supporting the mounting portion 21. The protrusions 2 are not limited to a truncated cone shape, and may be cylindrical, conical, triangular pyramidal, or the like. In particular, the protrusions 2 are preferably frustum-shaped, because this shape facilitates rapid heat dissipation toward the substrate 1 even if the temperature of the workpiece rises.

[0011] The substrate 1 is the main body of the adsorption member 10 and is required to have the property of preventing deformation of the object to be processed placed thereon. Therefore, the substrate 1 preferably has high rigidity, high hardness, and high strength. The substrate 1 can be made of ceramics containing silicon carbide as its main component. That is, it is a silicon carbide sintered body containing silicon carbide as its main component (more than 50% by mass). Such silicon carbide sintered bodies have high thermal conductivity and excellent heat dissipation properties, so there is little temperature change in the object to be processed. Furthermore, silicon carbide sintered bodies are electrically conductive (semiconductive), which offers the advantages of being less susceptible to static electricity and electrostatic adhesion of particles. In particular, the silicon carbide content is preferably 80% by mass or more out of a total of 100% by mass of the components constituting the ceramic. Another component constituting the ceramic is, for example, boron carbide. The components that make up ceramics can be identified using an X-ray diffractometer (XRD) using CuKα radiation. After identifying the components, the content of each component can be determined using an X-ray fluorescence analyzer (XRF) or an ICP optical emission spectrometer to determine the content of the elements that make up the component, and then converted into the identified components.

[0012] The protrusions 2 are formed on the surface of the substrate 1 and adsorb and support the object to be processed. The object to be processed is supported by the multiple protrusions 2 to prevent contact between the object to be processed and the substrate 1. By adsorbing and supporting the object to be processed by the protrusions 2, fewer particles are trapped between the object to be processed and the mounting surface 3 than when the object to be processed is adsorbed and supported directly by the substrate 1, and the flatness of the object to be processed is less likely to deteriorate.

[0013] The support portion 22 constituting the protrusion portion 2 is made of ceramics having the same main component as the substrate 1, is formed integrally with the substrate 1, and is a frustum-shaped protrusion provided on the upper surface of the substrate 1. A mounting portion 21 is formed on the upper surface of the support portion 22.

[0014] The mounting part 21 is provided to prevent particles that have entered scratches or minute irregularities on the surface of the substrate 1, and particles that have adhered to the surface of the support part 2, from floating due to external forces such as vibration and adhering to the object to be processed. Therefore, the surface of the mounting part 21 is required to be dense and have few irregularities. The mounting portion 21 is provided with the film 4 that can form, for example, a smooth surface, and is required to be able to form the film 4 without peeling or cracking. In particular, if the difference in the thermal expansion coefficient between the support part 22 and the mounting part 21 is large, peeling or cracks will occur in the mounting part 21 during film formation, preventing good film formation, and therefore it is important to reduce the difference in the thermal expansion coefficient between the support part 22 and the mounting part 21. It is preferable that the mounting surface 3 has as few open pores as possible, and for example, the area occupancy rate of the open pores on the mounting surface 3 should be 0.5% or less, and particularly 0.2% or less.

[0015] To calculate the area occupancy rate of open pores, first select a portion where the size and distribution of open pores are observed on average. For example, select a portion with an area of ​​3.84 × 10 -2 mm 2An observation image of the area (0.226 mm horizontal length, 0.170 mm vertical length) was taken with a scanning electron microscope at 500x magnification to obtain an observation image. This observation image was then analyzed by a method called particle analysis using the image analysis software "A-zo-kun (ver. 2.52)" (registered trademark, manufactured by Asahi Kasei Engineering Co., Ltd.; in the following explanation, when the image analysis software "A-zo-kun" is used, it refers to the image analysis software manufactured by Asahi Kasei Engineering Co., Ltd.), and the average circle-equivalent diameter of the open pores could be determined. The particle analysis setting conditions are, for example, a threshold value that indicates the brightness of the image of 83, brightness is dark, and the small figure removal area is 0.2 μm 2 In the above measurement, the threshold value was set to 83, but the threshold value can be adjusted according to the brightness of the observed image. The brightness was set to dark, the binarization method was set to manual, and the small figure removal area was set to 0.2 μm 2 With the noise reduction filter enabled, the threshold value can be manually adjusted so that the markers in the observed image, whose size changes depending on the threshold value, match the shape of the open pores.

[0016] The mounting portion 21 is made of a film 4 containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum. The mounting portion 21 provided with the film 4 has a small difference in thermal expansion coefficient from the support portion 22, and when the object to be processed is adsorbed, heat is easily dissipated due to the high thermal conductivity of these main components. Furthermore, since a film with almost no open pores is obtained, particles are less likely to adhere to the mounting surface 3. Furthermore, it is possible to dissipate static electricity that builds up on the mounting surface 3, thereby reducing particle adhesion. When the film 4 is primarily composed of silicon carbide, diamond-like carbon, or amorphous silicon, these primary components have high rigidity, so deformation of the film 4 is reduced. On the other hand, when the film 4 is primarily composed of molybdenum, chromium, or tantalum, these primary components have low rigidity, so the film 4 is more likely to follow the microscopic behavior of the object in the planar direction. The film 4 containing these metals as its main component includes a film made of a molybdenum alloy, a chromium alloy, or a tantalum alloy. The main component of the film 4 refers to a component that accounts for 90% by mass or more of the total 100% by mass of the components that make up the film 4. The components that make up the film 4 can be identified using a thin film X-ray diffractometer, and the content of each component can be determined using the Rietveld method.

[0017] When the film 4 is mainly composed of silicon, the crystal structure can be examined using a thin film X-ray diffraction device. If the half-width of the silicon peak appearing at a diffraction angle (2θ) of about 28° is 1.0° or more, the silicon crystal structure is amorphous. When the film 4 is mainly composed of diamond-like carbon, it may be identified using a Raman spectrometer. In this case, the peak intensity I of the G band in the Raman spectrum obtained by the Raman spectrometer G D-Band I D Ratio of peak intensities I D / I G , for example, 0.7 or more and 1.3 or less.

[0018] The films 4 are independent from each other for each protrusion 2. Being independent from each other means that the films 4 are separated into each protrusion 2. This reduces residual strain in the film 4 compared to when the film 4 covers the entire surface of the substrate 1 and the outer periphery of the protrusion 2, making it less likely that the flatness of the mounting surface 3 will be impaired by thermal deformation or the like. The film 4 may extend toward the outer peripheral surface of the support part 22 and cover at least a part of the outer peripheral surface of the support part 22. In this case, particle shedding from the outer peripheral surface of the support part 22 is reduced, and particles floating around and adhering to the adsorbate can be reduced.

[0019] The thickness of the film 4 is preferably 30 μm or more and 400 μm or less. Since the specific heat capacity of the film 4 is low, the flatness of the mounting surface 3, which is the top of the multiple protrusions 2, is not impaired. In particular, the thickness of the film 4 is preferably 50 μm or more and 200 μm or less.

[0020] The surface of the substrate 1 preferably has a larger average value of the cut level difference (Rδc), which represents the difference between the cut level at a load length ratio of 25% on the roughness curve and the cut level at a load length ratio of 75% on the roughness curve, than the mounting surface 3. This reduces the risk of the reaction product adhering to the surface of the substrate 1 and floating away again, even if the workpiece is adsorbed to an adsorption member installed in the plasma processing apparatus and reaction products generated by the plasma processing float. The mounting surface 3 has fewer irregularities, making it less likely that scratches will be made on the back surface of the workpiece. Specifically, the difference in average value of the cutting level difference (Rδc) between the surface of the substrate 1 and the placement surface 3 is preferably 0.38 μm or more. Here, it is preferable that the average value of the cutting level difference (Rδc) on the surface of the substrate 1 is 1.4 μm or less, which makes it difficult for large particles to be detached from the surface of the substrate 1 and reduces the risk of these particles adhering to the object to be processed.

[0021] The cut level difference (Rδc) is the difference in height between the cut levels C (Rrm1) and C (Rrm2) that correspond to the load length ratios Rmr1 and Rmr2, respectively, on the roughness curve specified in JIS B0601: 2001. If the cut level difference (Rδc) is large, the unevenness of the measurement surface will be large, and if it is small, the unevenness of that surface will be small.

[0022] The cut level difference (Rδc) can be measured in accordance with JIS B 0601:2001 using a laser microscope (Keyence Corporation, Ultra-Deep Color 3D Shape Measuring Microscope (VK-X1000 or its successor model)). Measurement conditions are as follows: coaxial illumination, 480x magnification, no cutoff value λs, 0.08mm cutoff value λc, no cutoff value λf, end effect correction, and a measurement range of 710μm × 533μm per point from the measurement surface. When the surface of the substrate 1 is the measurement surface, a measurement target circle is drawn around the support portion 22, with the length of each circle being, for example, 1360μm. When the mounting surface 3 is the measurement surface, a measurement target circle is drawn near the outer edge of the mounting surface 3, with the length of each circle being, for example, 240μm. The average value may be calculated from the measured values, with the number of measurements for each being eight or more.

[0023] Furthermore, it is preferable that the surface of substrate 1 has a larger average value of the root-mean-square slope (RΔq) of the roughness curve than that of mounting surface 3. This reduces the risk that even if the object to be processed is adsorbed to an adsorption member installed in the plasma processing apparatus and reaction products generated by plasma processing float, the reaction products will adhere to the surface of substrate 1 and float again. Because mounting surface 3 has fewer irregularities, it is less likely that scratches will be caused on the back surface of the object to be processed. Specifically, the difference in the average value of the root mean square slope (RΔq) between the surface of the substrate 1 and the mounting surface 3 is preferably 0.34 or more. Here, it is preferable that the average value of the root mean square slope (RΔq) of the surface of the substrate 1 is 1.1 or less, which makes it difficult for large particles to detach from the surface and reduces the risk of these particles adhering to the object to be processed.

[0024] The root mean square slope (RΔq) of a roughness profile is the root mean square of the local slope dZ / dx of the roughness profile at the reference length l measured in accordance with JIS B 0601:2001, and is calculated by the following formula:

number

[0025] A large root mean square slope (RΔq) value indicates a steeper surface roughness, whereas a small root mean square slope (RΔq) value indicates a gentler surface roughness. The root mean square slope (RΔq) can be measured using a laser microscope (Keyence Corporation, VK-X1100 or its successor model) in accordance with JIS B 0601:2001. The measurement conditions and calculation of the average value are as described above.

[0026] As shown in Figures 3A and 3B, the protrusions 120, 120' may have step portions 5, 5' around the support portions 122, 122'. This increases the rigidity of the protrusions 120, 120'. The protrusion 120 shown in Figure 3A has step portions 5 formed around the support portions 122, and a mounting portion 121 formed above the step surface. The protrusion 120' shown in Figure 3B has a mounting portion 121' formed to cover the step surface of the step portion 5'. The film 4 on the mounting portion 121' can suppress shedding that may occur from the step surface of the support portion 122'. The step surface shown in FIGS. 3A and 3B is annular, but may also be in the shape of a square or rectangular frame.

[0027] The upper surface of the film 4 covering the step surface of the step portion 5 or the step surface of the step portion 5' preferably has a larger average value of the cut level difference (Rδc), which represents the difference between the cut level at a load length ratio of 25% on the roughness curve and the cut level at a load length ratio of 75% on the roughness curve, than the mounting surface 3. This reduces the risk that even if reaction products generated by plasma processing of the workpiece float, the reaction products will adhere to the step surface of the step portion 5 or the upper surface of the film 4 covering the step surface of the step portion 5' and float again. Furthermore, since the mounting surface 3 has fewer irregularities, it is less likely to scratch the back surface of the workpiece. Specifically, the difference in the average value of the cutting level difference (Rδc) between the step surface and the placement surface 3 is preferably 0.38 μm or more. The average value of the cutting level difference (Rδc) of the stepped surface is preferably 1.4 μm or less, which makes it difficult for large particles to detach from the stepped surface and reduces the risk of these particles adhering to the workpiece. The method for measuring the cut level difference (Rδc) is the same as described above.

[0028] Furthermore, it is preferable that the step surfaces of the step portions 5, 5' have a larger average value of the root-mean-square slope (RΔq) of the roughness curve than the mounting surface 3. This reduces the risk that reaction products generated by plasma processing of the workpiece will float and adhere to the step surfaces and float again. Furthermore, since the mounting surface 3 has fewer irregularities, it is less likely to scratch the back surface of the workpiece. Specifically, the difference in the average value of the root mean square slope (RΔq) between the step surface and the placement surface 3 is preferably 0.34 or more. The average value of the root mean square slope (RΔq) of the stepped surface is preferably 1.1 or less, which makes it difficult for large particles to detach from the stepped surface and reduces the risk of these particles adhering to the workpiece. The root mean square slope (RΔq) was measured in the same manner as described above.

[0029] The average value of the skewness (RSK1) in the roughness curve of the mounting surface 3 may be smaller than the average value of the skewness (RSK2) in the roughness curve of the step surface or the upper surface of the film 4, 4' covering the step surface (hereinafter collectively referred to as the step surface). The skewness in a roughness curve (RSK) is defined in JIS B 0601:2001 and is an index that indicates the ratio of peaks to valleys when the average height of the roughness curve is taken as the center line. When the average value of skewness (RSK1) is smaller than the average value of skewness (RSK2), the flatness of the peaks on the mounting surface 3 is higher than that of the peaks on the step surface, so the aggressiveness of the mounting surface to the workpiece is reduced. On the other hand, the steepness of the peaks on the step surface is higher than that of the peaks on the mounting surface, so when particles adhere to the step surface, a high trapping effect is obtained, and the risk of the particles becoming airborne again even if an external disturbance such as vibration is applied is reduced. Specifically, it is preferable that the difference between the average value of skewness (RSK1) and the average value of skewness (RSK2) is 0.2 or more, and particularly 0.3 or more. The average value of the skewness (RSK2) is preferably 1.5 or less. When the average value of the skewness (RSK2) is within this range, particles are less likely to detach from the peaks of the mounting surface 3, and the detached particles are less likely to float and adhere to the object to be adsorbed. The skewness (RSK1 and RSK2) can be measured in accordance with JIS B 0601:2001 using a laser microscope (Keyence Corporation, VK-X1100 or its successor model). The measurement conditions and calculation of the average value are as described above.

[0030] In the present disclosure, as in the protrusion 220 shown in Fig. 4A, an annular recess 6 is provided around the support portion 222, extending in the depth direction from the surface of the substrate 1, and the radial width w of the recess 6 is preferably narrower than the circle-equivalent diameter d of the mounting surface 3 of the mounting portion 221. Alternatively, as in the protrusion 320 shown in Fig. 4B, an annular recess 6' is provided, extending in the depth direction from the step surface, and similarly, the radial width w of the recess 6' is preferably narrower than the circle-equivalent diameter d of the mounting surface 3 of the mounting portion 321. When the recess 6 is provided around the support portion 222 or on the step surface in this way, the reaction products can be easily captured by the recesses 6, 6' and the captured reaction products can be prevented from floating again. 4B shows an annular recess 6' extending in the depth direction from the inner periphery of the step surface, but recess 6' may also extend in the depth direction from the outer periphery of the step surface, or may extend in the depth direction from a portion that includes both the inner and outer peripheries of the step surface. The inner periphery of the step surface refers to the range starting from the inner periphery of the step surface and extending over half the width of the step surface, and the outer periphery of the step surface refers to the range excluding the inner periphery of the step surface.

[0031] The recessed portion 6 is annular and surrounds the protrusion 220, and the recessed portion 6' is annular and surrounds the area above the step surface, including the mounting portion 321. The outer periphery in top view is preferably circular, but may be polygonal, including triangular. The radial width w of the recessed portions 6, 6' is preferably 5% to 35% of the circle-equivalent diameter d of the mounting surface 3.

[0032] Next, a method for manufacturing the adsorption member of the present disclosure will be described with reference to Figures 5A to 5E. In manufacturing the adsorption member of the present disclosure, first, ceramics 7 containing silicon carbide as a main component is prepared (Figure 5A). That is, pure water, a dispersant, boron carbide powder, and a sintering aid such as a phenolic resin are added to silicon carbide powder, and then wet mixed in a ball mill to prepare a slurry. Here, the content of boron carbide powder relative to 100% by mass of silicon carbide powder is, for example, 1% by mass to 3% by mass.

[0033] Next, an organic binder is added to the slurry, and the mixture is spray-dried to form granules. The granules are then formed into a green body using various forming methods (e.g., cold isostatic pressing (CIP)), and the green body is then machined to produce a green body of the desired shape. If necessary, the green body is heated in a nitrogen atmosphere for 10 to 40 hours, held at 450 to 650°C for 2 to 10 hours, and then naturally cooled and degreased. The degreased green body is then fired at 1800°C to 2000°C in a reduced-pressure atmosphere of an inert gas, such as argon gas, to produce ceramics 7.

[0034] Next, as shown in Fig. 5B, the surface that will become the front surface of the substrate is subjected to laser processing using, for example, a carbon dioxide laser, a YAG laser, an ArF excimer laser, a KrF excimer laser, an XeCl excimer laser, or the like to form recesses 8 and protrusions 9 that are the remainder of the recesses 8. Next, as shown in Fig. 5C, the recesses 8 and protrusions 9 are coated with a film 4 that contains, as a main component, at least one selected from silicon carbide, DLC, amorphous silicon, molybdenum, chromium, and tantalum. The film 4 can be formed by, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), plating, vapor deposition, plasma ion implantation, ion plating, thermal spraying, etc. Among these, it is preferable to employ chemical vapor deposition, because the resulting mounting portions 21, 121, 221, 321 are extremely dense and have almost no minute irregularities on the surface, thereby making it possible to greatly reduce the amount of particles generated from the adsorption member 10.

[0035] On the other hand, warping is likely to occur due to internal stress caused by the difference in thermal expansion between the ceramic 7 and the film 4 during film formation by chemical vapor deposition or the like. Therefore, as shown in Fig. 5D, the film 4 is divided by at least one of grinding and polishing until the upper surfaces of the protrusions 9 are exposed. This reduces the internal stress accumulated in the mounting portion, and the flatness of the mounting surface 3 is reduced.

[0036] Next, as shown in FIG. 5E, the protrusions 9 are removed by laser processing, blasting, milling, or the like, thereby obtaining the substrate 1 and the chucking member 10 having the frustum-shaped protrusions 2, 120, and 121.

[0037] To provide step portions 5, 5' around support portion 122 as shown in Figure 3A or 3B, or to provide annular recessed portions 6, 6' around support portions 222, 322 as shown in Figure 4A or 4B, the step portions 5, 5' and / or recessed portions 6, 6' may be formed at the same time as removing protrusions 9 by laser processing, blasting, milling, etc.

[0038] The suction member of the present disclosure is suitable for use in holding a workpiece in a processing device such as an exposure device that processes the workpiece, such as a silicon wafer used in the manufacture of semiconductor integrated circuits or a glass substrate used in the manufacture of liquid crystal display devices, or in an inspection device that inspects silicon wafers, glass substrates, etc.

[0039] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the present disclosure. For example, the adsorption member 10 is not limited to a configuration using a vacuum chuck, and an electrostatic chuck that electrostatically adsorbs the workpiece may also be used. [Explanation of symbols]

[0040] 1 board 2, 120, 120´, 220, 320 protrusion 3. Placement surface 4, 4´ membrane 5, 5´ Stepped section 6, 6´ recess 7. Ceramics 8 recess 9 Convex part 10. Adsorption member 21, 121, 121', 221, 321 Placement area 22, 122, 122´, 222, 322 Support part

Claims

1. A substrate made of ceramic containing silicon carbide as a main component and a plurality of protrusions formed on a surface of the substrate, the protrusion has a mounting portion having a mounting surface for mounting the object to be processed and a support portion for supporting the mounting portion; the mounting portion includes a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum; The membrane is frustum-shaped, and each of the protrusions is independent from each other; An adsorption member in which the surface of the substrate has a larger average value of a cut level difference (Rδc), which represents the difference between the cut level at a load length ratio of 25% on a roughness curve and the cut level at a load length ratio of 75% on the roughness curve, than the placing surface.

2. A substrate made of ceramic containing silicon carbide as a main component, and a plurality of protrusions formed on a surface of the substrate, the protrusion has a mounting portion having a mounting surface for mounting the object to be processed and a support portion for supporting the mounting portion; the mounting portion includes a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum; The membrane is frustum-shaped, and each of the protrusions is independent from each other; the surface of the substrate has a larger average value of a cut level difference (Rδc) representing the difference between a cut level at a load length ratio of 25% on a roughness curve and a cut level at a load length ratio of 75% on the roughness curve than the mounting surface; An adsorption member in which the average value of the cutting level difference (Rδc) on the surface of the substrate is 1.4 μm or less.

3. A substrate made of ceramic containing silicon carbide as a main component, and a plurality of protrusions formed on a surface of the substrate, the protrusion has a mounting portion having a mounting surface for mounting the object to be processed and a support portion for supporting the mounting portion; the mounting portion includes a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum; The membrane is frustum-shaped, and each of the protrusions is independent from each other; the surface of the substrate has a larger average value of a cut level difference (Rδc) representing the difference between a cut level at a load length ratio of 25% on a roughness curve and a cut level at a load length ratio of 75% on the roughness curve than the mounting surface; a difference in average value of the cutting level difference (Rδc) between the surface of the substrate and the placement surface is 0.38 μm or more.

4. A substrate made of ceramic containing silicon carbide as a main component, and a plurality of protrusions formed on a surface of the substrate, the protrusion has a mounting portion having a mounting surface for mounting the object to be processed and a support portion for supporting the mounting portion; the mounting portion includes a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum; The membrane is frustum-shaped, and each of the protrusions is independent from each other; An attraction member, wherein the surface of the substrate has a larger average value of the root mean square slope (RΔq) in a roughness curve than the placement surface.

5. A substrate made of ceramic containing silicon carbide as a main component, and a plurality of protrusions formed on a surface of the substrate, the protrusion has a mounting portion having a mounting surface for mounting the object to be processed and a support portion for supporting the mounting portion; the mounting portion includes a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum; The membrane is frustum-shaped, and each of the protrusions is independent from each other; the surface of the substrate has a larger average value of the root mean square slope (RΔq) of the roughness curve than the placement surface; An adsorption member, wherein the average value of the root mean square slope (RΔq) of the surface of the substrate is 1.1 or less.

6. A substrate made of ceramic containing silicon carbide as a main component, and a plurality of protrusions formed on a surface of the substrate, the protrusion has a mounting portion having a mounting surface for mounting the object to be processed and a support portion for supporting the mounting portion; the mounting portion includes a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum; The membrane is frustum-shaped, and each of the protrusions is independent from each other; the surface of the substrate has a larger average value of the root mean square slope (RΔq) of the roughness curve than the placement surface; The adsorption member, wherein the difference in the average value of the root mean square slope (RΔq) is 0.34 or more.

7. A substrate made of ceramic containing silicon carbide as a main component, and a plurality of protrusions formed on a surface of the substrate, the protrusion has a mounting portion having a mounting surface for mounting the object to be processed and a support portion for supporting the mounting portion; the mounting portion includes a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum; The membrane is frustum-shaped, and each of the protrusions is independent from each other; the protrusion has a step portion with a step surface around the support portion, The film covers the step surface of the step portion.

8. A substrate made of ceramic containing silicon carbide as a main component, and a plurality of protrusions formed on a surface of the substrate, the protrusion has a mounting portion having a mounting surface for mounting the object to be processed and a support portion for supporting the mounting portion; the mounting portion includes a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum; The membrane is frustum-shaped, and each of the protrusions is independent from each other; the protrusion has a step portion with a step surface around the support portion, The suction member has an annular recessed portion extending in a depth direction from the step surface, and the radial width of the recessed portion is narrower than the equivalent circle diameter of the placement surface.

9. 9. The adsorption member according to claim 1, wherein the film extends toward the outer peripheral surface of the support portion and covers at least a portion of the outer peripheral surface of the support portion.

10. 9. The adsorption member according to claim 1, wherein the outer peripheral surface of the film and the outer peripheral surface of the support are flush with each other.

11. The adsorption member according to any one of claims 1 to 8, further comprising an annular recess around the support portion extending from the surface of the substrate in a depth direction, and the radial width of the recess is narrower than the circular equivalent diameter of the placement surface.

12. A method for manufacturing an adsorption member according to any one of claims 1 to 8, comprising: A method for manufacturing an adsorption member, comprising the steps of: (1) forming a recess and a protrusion, which is the remainder of the recess, on one surface of a substrate made of a ceramic containing silicon carbide as a main component; (2) A step of coating the recesses and protrusions with a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum. (3) A step of dividing the film by subjecting the film to at least one of grinding and polishing until the upper surfaces of the convex portions are exposed. (4) A step of removing the convex portions to obtain an adsorption member having the substrate and the protrusions.

13. A processing device using the adsorption member according to any one of claims 1 to 8.

14. An inspection device using the adsorption member according to any one of claims 1 to 8.

15. A substrate made of ceramic containing silicon carbide as a main component and a plurality of protrusions formed on a surface of the substrate, the protrusion portion has a mounting portion having a mounting surface for mounting the object to be processed, a support portion for supporting the mounting portion, and a step portion having a step surface around the support portion; the mounting portion and the step surface of the step portion are provided with a film containing, as a main component, at least one selected from silicon carbide, diamond-like carbon, amorphous silicon, molybdenum, chromium, and tantalum; The adsorption member, wherein the membranes are independent of each other for each of the protrusions.

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