Display device and electronic device

Abstract

The present invention provides a display apparatus with high display quality. Provided is a display apparatus comprising a light emitting device, a light receiving device, a first plano-convex lens, and a second plano-convex lens, wherein the light emitting device and the first plano-convex lens have regions overlapping each other, the light receiving device and the second plano-convex lens have regions overlapping each other, each of the light emitting device and the light receiving device has a pair of electrodes and an organic compound provided between the pair of electrodes, one of the pair of electrodes is a conductive film having transparency to visible light, the first plano-convex lens and the second plano-convex lens are each provided such that a surface on the reverse side from a convex surface is in contact with the conductive film, and the refractive indexes of the plano-convex lenses are larger than the refractive index of the conductive film.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device.

[0002] One embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] In recent years, display devices have been used in a variety of applications. Applications of large display devices include home televisions, digital signage, and public information displays (PIDs). Display devices are also used in smartphones and tablet devices equipped with touch panels.

[0004] There is also a demand for higher resolution display devices. Devices requiring high-resolution display devices are being actively developed for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR).

[0005] Light-emitting devices having light-emitting devices (also called light-emitting elements) have been developed as display devices. Light-emitting devices (also called EL devices or EL elements) that utilize the electroluminescence (hereinafter referred to as EL) phenomenon have features such as being easily thin and lightweight, being capable of high-speed response to input signals, and being capable of being driven by a DC constant voltage power supply, and are therefore applied to display devices.

[0006] Patent Document 1 discloses a display device for VR that uses an organic EL device (also called an organic EL element).

[0007] Furthermore, in display devices, a structure is also adopted in which light emitted from a light-emitting device is extracted through a microlens in order to improve light extraction efficiency. Patent Document 2 discloses a method for forming a microlens using a radiation-sensitive resin composition. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] International Publication No. 2018 / 087625 [Patent Document 2] Japanese Patent Application Publication No. 2020-101659 Summary of the Invention [Problem to be solved by the invention]

[0009] An object of one embodiment of the present invention is to provide a display device with high display quality.An object of one embodiment of the present invention is to provide a high-resolution display device.An object of one embodiment of the present invention is to provide a high-resolution display device.An object of one embodiment of the present invention is to provide a high-luminance display device.An object of one embodiment of the present invention is to provide a display device having an imaging function.An object of one embodiment of the present invention is to provide a display device having an authentication function.An object of one embodiment of the present invention is to provide a highly reliable display device.

[0010] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims. [Means for solving the problem]

[0011] One embodiment of the present invention is a display device that includes a light-emitting device and a lens, where the light-emitting device and the lens have an overlapping region. The light-emitting device includes a pair of electrodes and an organic compound provided between the pair of electrodes. One of the pair of electrodes is a conductive film that transmits visible light. The lens is provided in contact with the conductive film, and the refractive index of the lens is higher than the refractive index of the conductive film.

[0012] The lens is a plano-convex lens, and the surface opposite to the convex surface can be provided in contact with the conductive film.

[0013] Another embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, a first lens, and a second lens, the first light-emitting device and the second light-emitting device being adjacent to each other, an organic insulating layer being provided in a region between the first light-emitting device and the second light-emitting device, the first light-emitting device and the first lens having an overlapping region, and the second light-emitting device and the second lens having an overlapping region, the first light-emitting device and the second light-emitting device each having a pair of electrodes and an organic compound provided between the pair of electrodes, one of the pair of electrodes being a common electrode formed on the organic compound and the organic insulating layer and being a conductive film that is transparent to visible light, the first lens and the second lens being provided in contact with the conductive film, and the refractive index of the first lens and the second lens being higher than the refractive index of the conductive film.

[0014] Another embodiment of the present invention is a display device including a light-emitting device, a light-receiving device, a first lens, and a second lens, the light-emitting device and the light-receiving device being adjacent to each other, an organic insulating layer being provided in a region between the light-emitting device and the light-receiving device, the light-emitting device and the first lens having an overlapping region, and the light-receiving device and the second lens having an overlapping region, the light-emitting device and the light-receiving device each having a pair of electrodes and an organic compound provided between the pair of electrodes, one of the pair of electrodes being a common electrode formed on the organic compound and the organic insulating layer and being a conductive film that is transparent to visible light, the first lens and the second lens being provided in contact with the conductive film, and the refractive index of the first lens and the second lens being higher than the refractive index of the conductive film.

[0015] The organic insulating layer, the first lens, and the second lens are preferably made of the same material.

[0016] The first lens and the second lens may be plano-convex lenses, and the surfaces opposite to the convex surfaces may be provided in contact with the conductive film.

[0017] It is preferable to have an inorganic insulating layer between the organic compound and the organic insulating layer.

[0018] The organic insulating layer preferably has a convex curved upper surface.

[0019] Another aspect of the present invention is an electronic device that has the above-described display device and an optical element, wherein the display device can project a display onto the optical element, the optical element can transmit light, and by viewing the optical element, an image in which the image transmitting through the optical element and the display overlap can be viewed. [Effects of the Invention]

[0020] According to one embodiment of the present invention, a display device with high display quality can be provided. According to one embodiment of the present invention, a high-resolution display device can be provided. According to one embodiment of the present invention, a high-luminance display device can be provided. According to one embodiment of the present invention, a display device having an imaging function can be provided. According to one embodiment of the present invention, a display device having an authentication function can be provided. According to one embodiment of the present invention, a highly reliable display device can be provided.

[0021] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief explanation of the drawings]

[0022] 1A and 1B are a top view and a cross-sectional view, respectively, illustrating an example of a display device. 2A and 2B are cross-sectional views showing an example of a display device. 3A and 3B are cross-sectional views showing an example of a display device. 4A and 4B are cross-sectional views showing an example of a display device. 5A and 5B are cross-sectional views showing an example of a display device. 6A and 6B are cross-sectional views showing an example of a display device. 7A and 7B are cross-sectional views showing an example of a display device. 8A and 8B are cross-sectional views showing an example of a display device. 9A and 9B are cross-sectional views showing an example of a display device. 10A and 10B are cross-sectional views showing an example of a display device. FIG. 11 is a cross-sectional view showing an example of a display device. 12A and 12B are a top view and a cross-sectional view showing an example of a display device. 13A to 13C are cross-sectional views showing an example of a method for manufacturing a display device. 14A to 14C are cross-sectional views showing an example of a method for manufacturing a display device. 15A to 15C are cross-sectional views showing an example of a method for manufacturing a display device. 16A to 16C are cross-sectional views showing an example of a method for manufacturing a display device. 17A to 17C are cross-sectional views showing an example of a method for manufacturing a display device. 18A to 18C are cross-sectional views showing an example of a method for manufacturing a display device. 19A and 19B are cross-sectional views showing an example of a method for manufacturing a display device. 20A to 20D are cross-sectional views showing an example of a method for manufacturing a display device. 21A to 21F are diagrams showing an example of a pixel. 22A to 22K are diagrams showing an example of a pixel. 23A and 23B are perspective views showing an example of a display device. 24A and 24B are cross-sectional views showing an example of a display device. FIG. 25 is a cross-sectional view showing an example of a display device. FIG. 26 is a cross-sectional view showing an example of a display device. FIG. 27 is a cross-sectional view showing an example of a display device. FIG. 28 is a cross-sectional view showing an example of a display device. FIG. 29 is a cross-sectional view showing an example of a display device. FIG. 30 is a perspective view showing an example of a display device. Fig. 31A is a cross-sectional view showing an example of a display device, and Fig. 31B and Fig. 31C are cross-sectional views showing an example of a transistor. FIG. 32 is a cross-sectional view showing an example of a display device. 33A to 33F are diagrams showing configuration examples of a light-emitting device. 34A and 34B are diagrams showing configuration examples of a light receiving device, and Fig. 34C to Fig. 34E are diagrams showing configuration examples of a display device. 35A to 35D are diagrams showing an example of an electronic device. 36A to 36F are diagrams showing an example of an electronic device. 37A to 37G are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE INVENTION

[0023] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0024] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0025] Furthermore, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0026] The terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0027] In this specification, etc., a device fabricated using a metal mask or FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.

[0028] In this specification and the like, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer," a hole transport layer or an electron transport layer may be referred to as a "carrier transport layer," and a hole block layer or an electron block layer may be referred to as a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable from each other depending on their cross-sectional shapes or characteristics. Furthermore, one layer may have two or three functions among the carrier injection layer, carrier transport layer, and carrier block layer.

[0029] In this specification and the like, a light-emitting device (light-emitting element) has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. Here, layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier injection layer (a hole injection layer and an electron injection layer), a carrier transport layer (a hole transport layer and an electron transport layer), and a carrier block layer (a hole block layer and an electron block layer). In this specification and the like, a light-receiving device (also referred to as a light-receiving element) has at least an active layer that functions as a photoelectric conversion layer between a pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode, and the other as a common electrode.

[0030] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of the structure is inclined relative to the substrate surface. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface is less than 90°. The side surface of the structure and the substrate surface do not necessarily need to be completely flat, and may be approximately planar with a slight curvature or approximately planar with a slight unevenness.

[0031] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to drawings.

[0032] A display device according to one embodiment of the present invention includes light-emitting devices manufactured for different light-emitting colors and is capable of full-color display.

[0033] A structure in which different light-emitting layers are created or painted separately for each color light-emitting device (for example, blue (B), green (G), and red (R)) is sometimes called an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting device, increasing the freedom in material and configuration selection and making it easier to improve brightness and reliability.

[0034] When manufacturing a display device having a plurality of light-emitting devices each emitting a different light color, it is necessary to form the light-emitting layers each emitting a different light color in an island shape.

[0035] In this specification, the term "island-like" refers to a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer is physically separated from the adjacent light-emitting layer.

[0036] The island-shaped light-emitting layer can be formed by vacuum deposition using a metal mask. However, this method can cause deviations in the shape and position of the island-shaped light-emitting layer from the design due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and spreading of the contours of the deposited film due to vapor scattering, making it difficult to achieve high-definition displays and high aperture ratios. Furthermore, during deposition, the contours of the layer can become blurred, resulting in thinning of the edge thickness.

[0037] In other words, the island-shaped light-emitting layer may have uneven thickness depending on the location. Furthermore, when manufacturing large, high-resolution, or high-definition display devices, there is a concern that the manufacturing yield may be reduced due to low dimensional accuracy of the metal mask and deformation due to heat, etc.

[0038] Therefore, when manufacturing a display device according to one embodiment of the present invention, the light-emitting layer is processed into a fine pattern by lithography and etching processes without using a metal mask or the like. Specifically, a pixel electrode is formed for each subpixel, and then the light-emitting layer is formed over the plurality of pixel electrodes. The light-emitting layer is then processed by lithography and etching processes to form one island-shaped light-emitting layer for each pixel electrode. This allows the light-emitting layer to be divided into subpixels, and an island-shaped light-emitting layer can be formed for each subpixel.

[0039] When the light-emitting layer is processed into an island shape, the light-emitting layer may be damaged during the lithography and etching processes, resulting in a significant loss of reliability. Therefore, when manufacturing a display device according to one embodiment of the present invention, it is preferable to form a mask layer (also referred to as a sacrificial layer, a protective layer, or the like) on a functional layer (e.g., a carrier blocking layer, a carrier transporting layer, or a carrier injection layer, more specifically, a hole blocking layer, an electron transporting layer, or an electron injection layer) located above the light-emitting layer, and then process the light-emitting layer and the functional layer into an island shape. By applying this method, the light-emitting layer can be prevented from being exposed to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the light-emitting layer.

[0040] In this specification, the mask film and the mask layer are each located above at least the light-emitting layer (more specifically, the layer that is processed into an island shape among the layers that make up the EL layer), and have the function of protecting the light-emitting layer during the manufacturing process.

[0041] Furthermore, when the light-emitting layer is processed into an island shape, it is preferable to process a layer located below the light-emitting layer (for example, a carrier injection layer, a carrier transport layer, or a carrier block layer, more specifically, a hole injection layer, a hole transport layer, an electron block layer, etc.) into an island shape in the same pattern as the light-emitting layer. By processing a layer located below the light-emitting layer into an island shape in the same pattern as the light-emitting layer, it is possible to reduce leakage current (sometimes referred to as lateral leakage current) that may occur between adjacent subpixels.

[0042] When a hole injection layer is used as a common layer between adjacent subpixels, lateral leakage current may occur due to the hole injection layer. On the other hand, in the display device of one embodiment of the present invention, the hole injection layer can be processed into an island shape in the same pattern as the light-emitting layer, so that lateral leakage current between adjacent subpixels is substantially eliminated or can be made extremely small.

[0043] When the EL layer is processed using photolithography, wet etching, and dry etching processes, the EL layer may be damaged during each process. Heating has a particularly large effect, and if each process performed after the EL layer is formed is performed at a temperature higher than the heat resistance temperature of the EL layer, the EL layer may deteriorate, resulting in a decrease in the luminous efficiency and reliability of the light-emitting device.

[0044] Therefore, in one embodiment of the present invention, the heat resistance temperature of the compounds contained in the light-emitting device is set to 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, more preferably 140° C. or higher and 180° C. or lower.

[0045] Examples of heat resistance temperature indicators include glass transition point (Tg), softening point, melting point, thermal decomposition temperature, and 5% weight loss temperature. For example, the glass transition point of the material contained in each layer constituting the EL layer can be used as an indicator of the heat resistance temperature. Furthermore, if the layer is a mixed layer made of multiple materials, the glass transition point of the material contained in the largest amount can be used. Alternatively, the lowest glass transition point of the multiple materials may be used.

[0046] In particular, it is preferable to increase the heat resistance temperature of the light-emitting layer and the functional layer provided on the light-emitting layer. By increasing the heat resistance of the light-emitting layer, it is possible to prevent the light-emitting layer from being damaged by heating, which would result in a decrease in light-emitting efficiency and a shortened lifespan. Furthermore, by increasing the heat resistance of the functional layer, it is possible to effectively protect the light-emitting layer, thereby reducing damage to the light-emitting layer.

[0047] Increasing the heat resistance temperature of the light-emitting device can improve the reliability of the light-emitting device. In addition, the temperature range in the manufacturing process of the display device can be widened, which can improve the manufacturing yield and reliability.

[0048] In a light-emitting device that emits different colors, some of the layers constituting the EL layer can be formed in the same process. In a manufacturing method of a display device according to one embodiment of the present invention, after some of the layers constituting the EL layer are formed in islands for each light-emitting color, part of the mask layer is removed, and the remaining layers constituting the EL layer (sometimes referred to as common layers) and a common electrode (also referred to as an upper electrode) are formed in common for each color (as a single film). For example, a carrier injection layer and a common electrode can be formed in common for each color.

[0049] On the other hand, the carrier injection layer is often a layer with relatively high conductivity among the EL layers. Therefore, if the carrier injection layer comes into contact with the side surface of a part of the EL layer formed in an island shape or with the side surface of the pixel electrode, there is a risk of short-circuiting the light-emitting device. Even if the carrier injection layer is formed in an island shape and a common electrode is formed for each color, there is a risk of short-circuiting the light-emitting device if the common electrode comes into contact with the side surface of the EL layer or the side surface of the pixel electrode.

[0050] Therefore, the display device of one embodiment of the present invention includes an insulating layer that covers at least the side surfaces of the island-shaped light-emitting layers. In addition, the insulating layer preferably covers part of the top surface of the island-shaped light-emitting layers.

[0051] This prevents at least a portion of the island-shaped EL layer and the pixel electrode from coming into contact with the carrier injection layer or the common electrode, thereby preventing short circuits in the light-emitting device and improving the reliability of the light-emitting device.

[0052] In a cross-sectional view, the end of the insulating layer preferably has a tapered shape with a taper angle of less than 90°. This prevents step disconnection of the common layer and common electrode provided on the insulating layer. Therefore, connection failures due to step disconnection can be suppressed. Furthermore, it is possible to suppress an increase in electrical resistance due to local thinning of the common electrode caused by the step.

[0053] In this specification and the like, the term "step discontinuity" refers to a phenomenon in which a layer, film, or electrode is divided due to the shape of the surface on which it is formed (for example, a step or the like).

[0054] As described above, the island-shaped light-emitting layer manufactured by the method for manufacturing a display device according to one embodiment of the present invention is not formed using a fine metal mask, but is formed by forming the light-emitting layer on the entire surface and then processing it. Therefore, a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now, can be realized. Furthermore, since the light-emitting layer can be separately manufactured for each color, a display device with extremely vivid, high contrast, and high display quality can be realized. Furthermore, by providing a mask layer on the light-emitting layer, damage to the light-emitting layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting device.

[0055] Furthermore, it is difficult to reduce the spacing between adjacent light-emitting devices to less than 10 μm using a formation method that uses a fine metal mask. However, according to a method that uses lithography according to one embodiment of the present invention, in a process on a glass substrate, the spacing between adjacent light-emitting devices, adjacent EL layers, or adjacent pixel electrodes can be reduced to less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less.

[0056] Furthermore, by using an exposure tool for LSIs, the spacing between adjacent light-emitting devices, adjacent EL layers, or adjacent pixel electrodes can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less in processes on Si wafers. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting devices, enabling the aperture ratio to approach 100%. In a display device according to one embodiment of the present invention, the aperture ratio can be 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%.

[0057] Increasing the aperture ratio of a display device can improve the reliability of the display device. More specifically, when the lifespan of a display device using an organic EL device and with an aperture ratio of 10% is taken as the standard, the lifespan of a display device with an aperture ratio of 20% is approximately 3.25 times longer, and the lifespan of a display device with an aperture ratio of 40% is approximately 10.6 times longer. In this way, as the aperture ratio increases, the current density flowing through the organic EL device can be reduced, thereby improving the lifespan of the display device.

[0058] In the display device according to one embodiment of the present invention, the aperture ratio can be increased, thereby improving the display quality of the display device. Furthermore, the improved aperture ratio of the display device has the excellent effect of significantly improving the reliability (particularly the lifespan) of the display device.

[0059] Furthermore, the pattern of the light-emitting layer itself can be made much smaller than when a fine metal mask is used. Furthermore, when a metal mask is used to create separate light-emitting layers, the thickness varies between the center and edges of the pattern, so the effective area that can be used as the light-emitting region is smaller than the overall area of ​​the pattern.

[0060] On the other hand, in the above-described manufacturing method, a film formed to a uniform thickness is processed, so that island-shaped light-emitting layers can be formed with a uniform thickness. Therefore, even with a fine pattern, almost the entire area can be used as the light-emitting region. Therefore, a display device with both high definition and a high aperture ratio can be manufactured. Furthermore, the display device can be made smaller and lighter.

[0061] Specifically, the display device of one embodiment of the present invention can have a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and can have a resolution of 20000 ppi or less, or 30000 ppi or less.

[0062] Furthermore, the display device of one embodiment of the present invention includes a convex lens-shaped structure over the light-emitting device. By providing the structure over the light-emitting device, the efficiency of extracting light emitted from the light-emitting device to the outside can be increased.

[0063] The light-emitting device used in one embodiment of the present invention is a top-emission type, and light is extracted to the outside through a transparent conductive film that transmits visible light, which is one of the electrodes of the light-emitting device. At this time, part of the light emitted by the light-emitting device travels laterally using the transparent conductive film as a waveguide, reducing the light extraction efficiency. In one embodiment of the present invention, a convex lens-shaped structure is provided on the transparent conductive film, which suppresses the light traveling laterally and improves the light extraction efficiency.

[0064] In one embodiment of the present invention, when the display device includes a light-receiving device, a convex lens-shaped structure can be provided on the light-receiving device. By making the diameter of the structure provided on the light-receiving device larger than the effective area of ​​the light-receiving portion, the light-collecting ability can be increased, and the photosensitivity of the light-receiving device can be improved.

[0065] The convex lens-shaped structure can be provided on both the light-emitting device and the light-receiving device, but may be provided on either the light-emitting device or the light-receiving device.

[0066] In this specification, the convex lens-like structures may be simply referred to as lenses or microlenses, and a regularly arranged array of such lenses may be referred to as a microlens array (MLA).

[0067] In this embodiment, a cross-sectional structure of a display device according to one embodiment of the present invention will be mainly described, and a manufacturing method of the display device according to one embodiment of the present invention will be described in detail in Embodiment 2.

[0068] FIG. 1A shows a top view of a display device 100. The display device 100 has a display section in which a plurality of pixels 110 are arranged, and a connection section 140 outside the display section. A plurality of sub-pixels are arranged at equal intervals in the display section. FIG. 1A shows only a portion of the sub-pixels, and a pixel is made up of a plurality of sub-pixels. The connection section 140 can also be called a cathode contact section.

[0069] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, perpendicular or nearly perpendicular (see FIG. 1A).

[0070] The top surface shape of the subpixel shown in Figure 1A corresponds to the top surface shape of the light-emitting region. Examples of the top surface shape of the subpixel include polygons such as triangles, quadrilaterals (including rectangles and squares), and pentagons, as well as polygons with rounded corners, ellipses, and circles. In this specification and the like, the top surface shape refers to the shape in a plan view, i.e., the shape seen from above.

[0071] 1A, the circuit layout constituting the subpixel is not limited to the range of the subpixel shown in Fig. 1A and may be located outside of it. The transistors included in the subpixel 110a may be located within the range of the subpixel 110b shown in Fig. 1A, or part or all of the transistors may be located outside the range of the subpixel 110a.

[0072] 1A shows the subpixels 110a, 110b, and 110c as having equal or approximately equal aperture ratios (sizes, or light-emitting region sizes), but this is not a limitation of the present invention. The aperture ratios of the subpixels 110a, 110b, and 110c can be determined as appropriate. The aperture ratios of the subpixels 110a, 110b, and 110c may be different from one another, or two or more of the subpixels 110a, 110b, and 110c may be equal or approximately equal.

[0073] The pixel 110 shown in FIG. 1A employs a delta arrangement. The pixel 110 shown in FIG. 1A is composed of three subpixels: 110a, 110b, and 110c. The subpixels 110a, 110b, and 110c each have a light-emitting device that emits light of a different color. Examples of the subpixels 110a, 110b, and 110c include subpixels of three colors: red (R), green (G), and blue (B), and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). The number of types of subpixels is not limited to three, and may be four or more. Examples of four subpixels include subpixels of four colors: R, G, B, and white (W), subpixels of R, G, B, and Y, and subpixels of R, G, B, and infrared (IR).

[0074] FIG. 1A shows an example in which the connection unit 140 is located below the display unit when viewed from above, but the location of the connection unit 140 is not particularly limited. The connection unit 140 only needs to be located in at least one of the upper, right, left, and lower sides of the display unit when viewed from above, and may be located so as to surround the four sides of the display unit. The shape of the upper surface of the connection unit 140 may be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like. Furthermore, the connection unit 140 may be singular or plural.

[0075] Figure 1B shows a cross-sectional view taken along dashed line X1-X2 in Figure 1A, and Figures 2A and 2B show cross-sectional views taken along dashed line Y1-Y2 in Figure 1A.

[0076] 1B, in display device 100, an insulating layer is provided on layer 101 including transistors, light-emitting devices 130a, 130b, and 130c are provided on the insulating layer, and lenses 133 are provided on each of the light-emitting devices. In addition, protective layer 131 is provided to cover lens 133. Substrate 120 is bonded to protective layer 131 by resin layer 122. In addition, insulating layer 125 and insulating layer 127 on insulating layer 125 are provided in the region between adjacent light-emitting devices.

[0077] 1B shows multiple cross sections of insulating layer 125 and insulating layer 127, but when display device 100 is viewed from above, insulating layer 125 and insulating layer 127 are each connected to one another. In other words, display device 100 can be configured to have one insulating layer 125 and one insulating layer 127. Note that display device 100 may have multiple insulating layers 125 that are separated from one another, or may have multiple insulating layers 127 that are separated from one another.

[0078] The display device of one embodiment of the present invention is a top emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed.

[0079] The layer 101 including transistors can have a stacked structure including multiple transistors provided on a substrate and insulating layers covering these transistors. The insulating layer over the transistors may have a single-layer structure or a stacked structure. FIG. 1B shows the insulating layers over the transistors, including an insulating layer 255a, an insulating layer 255b over the insulating layer 255a, and an insulating layer 255c over the insulating layer 255b. These insulating layers may have recesses between adjacent light-emitting devices. FIG. 1B and other figures show an example in which a recess is provided in the insulating layer 255c. Note that the insulating layers over the transistors (insulating layers 255a to 255c) can also be considered as part of the layer 101 including transistors.

[0080] The insulating layers 255a, 255b, and 255c can be formed using various inorganic insulating films such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. The insulating layers 255a and 255c are preferably formed using an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layers 255a and 255c are preferably formed using silicon oxide films, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film.

[0081] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0082] A structure example of the layer 101 including a transistor will be described later in Embodiment 4.

[0083] The light emitting devices 130a, 130b, and 130c each emit light of a different color, and preferably emit light of three colors, for example, red (R), green (G), and blue (B).

[0084] As the light-emitting device, it is preferable to use an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials that the light-emitting device has include fluorescent materials, phosphorescent materials, inorganic compounds (quantum dot materials, etc.), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF materials). LEDs such as micro LEDs (light-emitting diodes) can also be used as the light-emitting device.

[0085] The light emitting device can emit infrared light or visible light (such as red, green, blue, cyan, magenta, yellow, or white), and the color purity can be enhanced by providing the light emitting device with a microcavity structure.

[0086] Regarding the configuration and materials of the light-emitting device, reference can be made to Embodiment 5.

[0087] Of the pair of electrodes that a light-emitting device has, one electrode functions as a cathode and the other electrode functions as an anode. In the following, an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode will be described.

[0088] The light-emitting device 130a has a pixel electrode 111a on the insulating layer 255c, an island-shaped first layer 113a on the pixel electrode 111a, a common layer 114 on the island-shaped first layer 113a, and a common electrode 115 on the common layer 114. In the light-emitting device 130a, the first layer 113a and the common layer 114 can be collectively referred to as an EL layer.

[0089] The light-emitting device 130b has a pixel electrode 111b on the insulating layer 255c, an island-shaped second layer 113b on the pixel electrode 111b, a common layer 114 on the island-shaped second layer 113b, and a common electrode 115 on the common layer 114. In the light-emitting device 130b, the second layer 113b and the common layer 114 can be collectively referred to as an EL layer.

[0090] The light-emitting device 130c has a pixel electrode 111c on an insulating layer 255c, an island-shaped third layer 113c on the pixel electrode 111c, a common layer 114 on the island-shaped third layer 113c, and a common electrode 115 on the common layer 114. In the light-emitting device 130c, the third layer 113c and the common layer 114 can be collectively referred to as an EL layer.

[0091] In this specification and the like, among the EL layers included in the light-emitting devices, layers provided in an island shape for each light-emitting device are referred to as the first layer 113a, the second layer 113b, or the third layer 113c, and a layer shared by a plurality of light-emitting devices is referred to as the common layer 114. Note that in this specification and the like, the first layer 113a, the second layer 113b, and the third layer 113c may be referred to as the island-shaped EL layer or the EL layer formed in an island shape, without including the common layer 114.

[0092] The first layer 113a, the second layer 113b, and the third layer 113c are spaced apart from one another. By providing an island-like EL layer for each light-emitting device, leakage current between adjacent light-emitting devices can be suppressed. This prevents crosstalk caused by unintended light emission and realizes a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0093] The pixel electrodes 111a, 111b, and 111c preferably have tapered edges. Specifically, the pixel electrodes 111a, 111b, and 111c preferably have tapered edges with a taper angle of less than 90°. When the edges of these pixel electrodes are tapered, the first layer 113a, the second layer 113b, and the third layer 113c provided along the side surfaces of the pixel electrodes also have tapered edges. Tapering the side surfaces of the pixel electrodes improves the coverage of the EL layer provided along the side surfaces of the pixel electrodes. Tapering the side surfaces of the pixel electrodes also facilitates the removal of foreign matter (also referred to as dust or particles) during the manufacturing process by cleaning or other processes, which is preferable.

[0094] In FIG. 1B, no insulating layer is provided between the pixel electrode 111a and the first layer 113a to cover the upper edge of the pixel electrode 111a. Furthermore, no insulating layer is provided between the pixel electrode 111b and the second layer 113b to cover the upper edge of the pixel electrode 111b. This allows the distance between adjacent light-emitting devices to be extremely narrow. This allows for a high-definition or high-resolution display device. Furthermore, a mask for forming the insulating layer is no longer necessary, thereby reducing the manufacturing cost of the display device.

[0095] Furthermore, by using a structure in which an insulating layer covering the edge of the pixel electrode is not provided between the pixel electrode and the EL layer, in other words, by using a structure in which an insulating layer is not provided between the pixel electrode and the EL layer, light emitted from the EL layer can be efficiently extracted. Therefore, the display device of one embodiment of the present invention can have extremely low viewing angle dependence. By reducing the viewing angle dependence, the visibility of images in the display device can be improved. In the display device of one embodiment of the present invention, the viewing angle (the maximum angle at which a certain contrast ratio is maintained when the screen is viewed from an oblique direction) can be set to a range of 100° or more and less than 180°, preferably 150° or more and 170° or less. The above viewing angles can be applied to both the vertical and horizontal directions.

[0096] The light-emitting device of the present embodiment may have a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having multiple light-emitting units). The light-emitting unit has at least one light-emitting layer.

[0097] The first layer 113a, the second layer 113b, and the third layer 113c each have at least a light-emitting layer. For example, the first layer 113a may have a light-emitting layer that emits red light, the second layer 113b may have a light-emitting layer that emits green light, and the third layer 113c may have a light-emitting layer that emits blue light.

[0098] In addition, when a light-emitting device with a tandem structure is used, it is preferable that the first layer 113a has a structure having multiple light-emitting units that emit red light, the second layer 113b has a structure having multiple light-emitting units that emit green light, and the third layer 113c has a structure having multiple light-emitting units that emit blue light. It is preferable to provide a charge generation layer between each light-emitting unit.

[0099] Additionally, the first layer 113a, the second layer 113b, and the third layer 113c may each have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generating layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0100] The first layer 113a, the second layer 113b, and the third layer 113c may each have a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer in this order. Alternatively, an electron blocking layer may be provided between the hole transport layer and the light-emitting layer. Alternatively, a hole blocking layer may be provided between the electron transport layer and the light-emitting layer. Alternatively, an electron injection layer may be provided on the electron transport layer.

[0101] The first layer 113a, the second layer 113b, and the third layer 113c may each have an electron injection layer, an electron transport layer, an emitting layer, and a hole transport layer in this order. Alternatively, a hole blocking layer may be provided between the electron transport layer and the emitting layer. Alternatively, an electron blocking layer may be provided between the hole transport layer and the emitting layer. Alternatively, a hole injection layer may be provided on the hole transport layer.

[0102] As described above, the first layer 113a, the second layer 113b, and the third layer 113c preferably have a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer. The first layer 113a, the second layer 113b, and the third layer 113c preferably have a light-emitting layer and a carrier block layer (hole block layer or electron block layer) on the light-emitting layer. The first layer 113a, the second layer 113b, and the third layer 113c preferably have a light-emitting layer, a carrier block layer on the light-emitting layer, and a carrier transport layer on the carrier block layer. The surfaces of the first layer 113a, the second layer 113b, and the third layer 113c are exposed during the manufacturing process of the display device. Therefore, providing one or both of the carrier transport layer and the carrier block layer on the light-emitting layer can prevent the light-emitting layer from being exposed to the outermost surface and reduce damage to the light-emitting layer. This can improve the reliability of the light emitting device.

[0103] The heat resistance temperature of the compounds contained in the first layer 113a, the second layer 113b, and the third layer 113c is 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower. The glass transition temperature (Tg) of these compounds is 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower.

[0104] In particular, it is preferable that the heat resistance temperature of the functional layer provided on the light-emitting layer is high. Furthermore, it is even more preferable that the heat resistance temperature of the functional layer provided on and in contact with the light-emitting layer is high. The high heat resistance of the functional layer makes it possible to effectively protect the light-emitting layer and reduce damage to the light-emitting layer.

[0105] Additionally, the first layer 113a, the second layer 113b, and the third layer 113c can each have a first light-emitting unit, a charge generating layer, and a second light-emitting unit.

[0106] The second light-emitting unit preferably has an emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the emitting layer. The second light-emitting unit preferably has an emitting layer and a carrier block layer (hole block layer or electron block layer) on the emitting layer. The second light-emitting unit preferably has an emitting layer, a carrier block layer on the emitting layer, and a carrier transport layer on the carrier block layer.

[0107] Since the surface of the second light-emitting unit is exposed during the manufacturing process of the display device, providing one or both of a carrier transport layer and a carrier block layer on the light-emitting layer prevents the light-emitting layer from being exposed to the outermost surface, thereby reducing damage to the light-emitting layer. This improves the reliability of the light-emitting device. Note that when the device has three or more light-emitting units, it is preferable that the uppermost light-emitting unit has a light-emitting layer and one or both of a carrier transport layer and a carrier block layer on the light-emitting layer.

[0108] The common layer 114 can include an electron injection layer or a hole injection layer, or can include a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer. The common layer 114 is shared by the light-emitting devices 130a, 130b, and 130c.

[0109] 1B shows an example in which the edge of the first layer 113a is positioned outside the edge of the pixel electrode 111a. Note that although the pixel electrode 111a and the first layer 113a are used as an example for explanation, the same can be said for the pixel electrode 111b and the second layer 113b, and the pixel electrode 111c and the third layer 113c.

[0110] 1B, the first layer 113a is formed to cover the edge of the pixel electrode 111a. With this configuration, the entire upper surface of the pixel electrode can be used as the light-emitting region, which makes it easier to increase the aperture ratio compared to a configuration in which the edge of the island-shaped EL layer is located inside the edge of the pixel electrode.

[0111] Furthermore, by covering the side surfaces of the pixel electrodes with the EL layer, contact between the pixel electrodes and the common electrode 115 can be prevented, thereby preventing short circuits in the light-emitting device. Also, the distance between the light-emitting region of the EL layer (i.e., the region overlapping with the pixel electrode) and the edge of the EL layer can be increased. Since the edge of the EL layer may be damaged by processing, using an area away from the edge of the EL layer as the light-emitting region may improve the reliability of the light-emitting device.

[0112] The common electrode 115 is shared by the light-emitting devices 130a, 130b, and 130c. The common electrode 115 shared by the plurality of light-emitting devices is electrically connected to a conductive layer 123 provided in the connection portion 140 (see FIGS. 2A and 2B). The conductive layer 123 is preferably made of the same material and formed in the same process as the pixel electrodes 111a, 111b, and 111c.

[0113] 2A shows an example in which a common layer 114 is provided on the conductive layer 123, and the conductive layer 123 and the common electrode 115 are electrically connected via the common layer 114. The common layer 114 does not need to be provided in the connection portion 140. In FIG. 2B, the conductive layer 123 and the common electrode 115 are directly connected. For example, by using a mask for defining a film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), the regions where the common layer 114 and the common electrode 115 are formed can be changed.

[0114] Also, in FIG. 1B, a mask layer 118a is located on the first layer 113a of light-emitting device 130a, a mask layer 118b is located on the second layer 113b of light-emitting device 130b, and a mask layer 118c is located on the third layer 113c of light-emitting device 130c.

[0115] Mask layer 118a is a remaining portion of a mask layer that was provided on the upper surface of first layer 113a when processing first layer 113a. Similarly, mask layer 118b is a remaining portion of a mask layer that was provided when second layer 113b was formed, and mask layer 118c is a remaining portion of a mask layer that was provided when third layer 113c was formed.

[0116] In this manner, in the display device of one embodiment of the present invention, a part of the mask layer used to protect the EL layer during manufacturing may remain. The same material may be used for any two or all of the mask layers 118a to 118c, or different materials may be used for each of the mask layers. Note that hereinafter, the mask layers 118a, 118b, and 118c may be collectively referred to as the mask layer 118.

[0117] 1B, one end of the mask layer 118a is aligned or approximately aligned with an end of the first layer 113a, and the other end of the mask layer 118a is located on the first layer 113a, where the other end of the mask layer 118a preferably overlaps the first layer 113a and the pixel electrode 111a.

[0118] In this case, the other end of mask layer 118a is likely to be formed on the approximately flat surface of first layer 113a. The same applies to mask layers 118b and 118c. Mask layer 118 remains between the upper surface of the island-shaped EL layer (first layer 113a, second layer 113b, or third layer 113c) and insulating layer 125. The mask layer will be described in detail in the second embodiment.

[0119] In addition, when the edges are aligned or approximately aligned, and when the top surface shapes are the same or approximately aligned, it can be said that at least a portion of the contours of the stacked layers overlap when viewed from above. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, the edges are also said to be approximately aligned, or the top surface shapes are said to be approximately aligned.

[0120] The side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c are covered with the insulating layer 125. The insulating layer 127 overlaps the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c with the insulating layer 125 interposed therebetween.

[0121] Furthermore, a portion of the upper surface of each of first layer 113a, second layer 113b, and third layer 113c is covered with mask layer 118. Insulating layer 125 and insulating layer 127 overlap a portion of the upper surface of each of first layer 113a, second layer 113b, and third layer 113c via mask layer 118. Note that the upper surface of each of first layer 113a, second layer 113b, and third layer 113c is not limited to the upper surface of the flat portion overlapping the upper surface of the pixel electrode, but may also include the upper surfaces of the inclined portion and flat portion (see region 103 in FIG. 7A ) located outside the upper surface of the pixel electrode.

[0122] By covering part of the top surface and side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c with at least one of the insulating layer 125, the insulating layer 127, and the mask layer 118, the common layer 114 (or the common electrode 115) is prevented from contacting the side surfaces of the pixel electrodes 111a, 111b, and 111c, the first layer 113a, the second layer 113b, and the third layer 113c, thereby preventing short circuits in the light-emitting device and improving the reliability of the light-emitting device.

[0123] 1B, the first to third layers 113a to 113c are all shown to have the same thickness, but the present invention is not limited to this. The first to third layers 113a to 113c may have different thicknesses. It is preferable to set the thickness of each layer according to the optical path length that enhances the light emitted by each layer. This allows for a microcavity structure to be realized, and the color purity of each light-emitting device to be improved.

[0124] It is preferable that the insulating layer 125 contacts the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c (see the end portions of the first layer 113a and the second layer 113b and the areas in their vicinity surrounded by dashed lines in FIG. 3A). By configuring the insulating layer 125 to contact the first layer 113a, the second layer 113b, and the third layer 113c, peeling of the first layer 113a, the second layer 113b, and the third layer 113c can be prevented.

[0125] The insulating layer adheres closely to the first layer 113a, the second layer 113b, or the third layer 113c, thereby providing the effect of fixing or bonding adjacent first layers 113a, etc., by the insulating layer. This improves the reliability of the light-emitting device and also increases the manufacturing yield of the light-emitting device.

[0126] 1B, insulating layer 125 and insulating layer 127 cover part of the top surface and both side surfaces of first layer 113a, second layer 113b, and third layer 113c, which can further prevent peeling of the EL layer and improve the reliability of the light-emitting device and the manufacturing yield of the light-emitting device.

[0127] 1B shows an example in which a stacked structure of a first layer 113a, a mask layer 118a, an insulating layer 125, and an insulating layer 127 is located on an end of a pixel electrode 111a. Similarly, a stacked structure of a second layer 113b, a mask layer 118b, an insulating layer 125, and an insulating layer 127 is located on an end of a pixel electrode 111b, and a stacked structure of a third layer 113c, a mask layer 118c, an insulating layer 125, and an insulating layer 127 is located on an end of a pixel electrode 111c.

[0128] 1B shows a configuration in which the end of pixel electrode 111a is covered with first layer 113a, and insulating layer 125 is in contact with the side surface of first layer 113a. Similarly, the end of pixel electrode 111b is covered with second layer 113b, the end of pixel electrode 111c is covered with third layer 113c, and insulating layer 125 is in contact with the side surface of second layer 113b and the side surface of third layer 113c.

[0129] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap a portion of the top surface and the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c via the insulating layer 125. It is preferable that the insulating layer 127 cover at least a portion of the side surfaces of the insulating layer 125.

[0130] By providing the insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, which reduces the extreme unevenness of the surface on which layers (such as the carrier injection layer and the common electrode) are formed on the island-shaped layers, making it possible to make the surface flatter, thereby improving the coverage of the carrier injection layer and the common electrode.

[0131] The common layer 114 and the common electrode 115 are provided on the first layer 113a, the second layer 113b, the third layer 113c, the mask layer 118, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, there is a step between the region where the pixel electrode and the island-shaped EL layer are provided and the region where the pixel electrode and the island-shaped EL layer are not provided (the region between the light-emitting devices).

[0132] In the display device of one embodiment of the present invention, the insulating layers 125 and 127 can flatten the step, thereby improving the coverage of the common layer 114 and the common electrode 115. Therefore, poor connection due to disconnection of the step can be suppressed. Furthermore, an increase in electrical resistance due to local thinning of the common electrode 115 due to the step can be suppressed.

[0133] The upper surface of insulating layer 127 preferably has a shape with high flatness, but may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion. For example, the upper surface of insulating layer 127 preferably has a smooth convex curved surface shape.

[0134] In the display device of one embodiment of the present invention, the insulating layer 127 is provided on the insulating layer 125 so as to fill the recessed portion where the insulating layer 125 is formed. The insulating layer 127 is provided between the island-shaped EL layers. In other words, the display device of one embodiment of the present invention is fabricated using a process (hereinafter referred to as Process 1) in which the island-shaped EL layers are formed and then the insulating layer 127 is provided so as to overlap with the edge of the island-shaped EL layer.

[0135] On the other hand, a process different from Process 1 is a process (hereinafter referred to as Process 2) in which a pixel electrode is formed in an island shape, an insulating film (also called a bank or structure) is formed to cover the end of the pixel electrode, and then an island-shaped EL layer is formed on the pixel electrode and the insulating film.

[0136] The above-described Process 1 is preferable because it can provide a wider margin than the above-described Process 2. More specifically, the above-described Process 1 has a wider margin for alignment accuracy between different patternings than the above-described Process 2, and can provide a display device with less variation. Therefore, the manufacturing method of a display device according to one embodiment of the present invention is based on the above-described Process 1, and therefore can provide a display device with less variation and high display quality.

[0137] Next, examples of materials for the insulating layer 125 and the insulating layer 127 will be described.

[0138] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. Aluminum oxide is particularly preferable because it has a high etching selectivity with respect to the EL layer and protects the EL layer during the formation of the insulating layer 127, which will be described later.

[0139] In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) as the insulating layer 125, it is possible to form an insulating layer 125 with few pinholes and excellent protection of the EL layer. Alternatively, the insulating layer 125 may have a laminated structure of a film formed by ALD and a film formed by sputtering. For example, the insulating layer 125 may have a laminated structure of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0140] The insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. The insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. The insulating layer 125 preferably has a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0141] In this specification and the like, a barrier insulating layer refers to an insulating layer having barrier properties. In addition, in this specification and the like, the barrier properties refer to a function of suppressing the diffusion of a corresponding substance (also referred to as low permeability), or a function of capturing or fixing (gettering) a corresponding substance.

[0142] The insulating layer 125 has a function as a barrier insulating layer or a gettering function, which makes it possible to suppress the intrusion of impurities (typically, at least one of water and oxygen) that may diffuse into each light-emitting device from the outside. This configuration makes it possible to provide a highly reliable light-emitting device and further a highly reliable display device.

[0143] Furthermore, the insulating layer 125 preferably has a low impurity concentration. This can prevent impurities from entering the EL layer from the insulating layer 125 and causing deterioration of the EL layer. Furthermore, by reducing the impurity concentration in the insulating layer 125, the barrier properties against at least one of water and oxygen can be improved. It is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration or a sufficiently low carbon concentration, preferably both.

[0144] The insulating layer 125 and the mask layers 118a, 118b, and 118c can be made of the same material. In this case, the boundary between the insulating layer 125 and one of the mask layers 118a, 118b, and 118c may be unclear and indistinguishable. Therefore, the insulating layer 125 and one of the mask layers 118a, 118b, and 118c may be recognized as a single layer. In other words, one layer may be provided in contact with a portion of the top surface and the side surface of each of the first layer 113a, the second layer 113b, and the third layer 113c, and the insulating layer 127 may be observed to cover at least a portion of the side surface of the single layer.

[0145] The insulating layer 127 provided on the insulating layer 125 has the function of flattening the extreme unevenness of the insulating layer 125 formed between adjacent light-emitting devices. In other words, the presence of the insulating layer 127 has the effect of improving the flatness of the surface on which the common electrode 115 is formed.

[0146] An insulating layer containing an organic material can be suitably used as insulating layer 127. As the organic material, a photosensitive organic resin is preferably used, for example, a photosensitive resin composition containing acrylic resin. Note that in this specification and the like, acrylic resin does not refer only to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0147] Alternatively, the insulating layer 127 may be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenol resin, or precursors of these resins. Alternatively, the insulating layer 127 may be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, the photosensitive resin may be a photoresist. Either a positive-type material or a negative-type material may be used as the photosensitive organic resin.

[0148] The insulating layer 127 may be made of a material that absorbs visible light. By having the insulating layer 127 absorb light emitted from the light-emitting device, it is possible to prevent light from leaking from the light-emitting device to an adjacent light-emitting device through the insulating layer 127 (stray light). This makes it possible to improve the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, it is possible to reduce the weight and thickness of the display device.

[0149] Materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (such as polyimides), and resin materials that can be used in color filters (color filter materials). In particular, using a resin material in which two or more color filter materials are laminated or mixed is preferable because it can enhance the visible light blocking effect. In particular, mixing three or more color filter materials makes it possible to create a black or nearly black resin layer.

[0150] Furthermore, it is preferable that the material used for insulating layer 127 has a low volume shrinkage rate. This makes it easier to form insulating layer 127 in the desired shape. It is also preferable that insulating layer 127 has a low volume shrinkage rate after curing. This makes it easier to maintain the shape of insulating layer 127 in various processes after its formation. Specifically, the volume shrinkage rate of insulating layer 127 after thermal curing, photocuring, or photocuring and thermal curing is preferably 10% or less, more preferably 5% or less, and even more preferably 1% or less. Here, the volume shrinkage rate can be either the volume shrinkage rate due to light irradiation or the volume shrinkage rate due to heating, or the sum of both.

[0151] Next, the structure of insulating layer 127 and its vicinity will be described with reference to Figures 3A and 3B. Figure 3A is an enlarged cross-sectional view of insulating layer 127 between light-emitting device 130a and light-emitting device 130b and some of its surrounding elements. The following description will be given using insulating layer 127 between light-emitting device 130a and light-emitting device 130b as an example, but the same can be said for insulating layer 127 between light-emitting device 130b and light-emitting device 130c, and insulating layer 127 between light-emitting device 130c and light-emitting device 130a.

[0152] Fig. 3B is an enlarged view of the end of insulating layer 127 on second layer 113b and its vicinity shown in Fig. 3A. In the following, the end of insulating layer 127 on second layer 113b may be used as an example for explanation, but the same can be said for the end of insulating layer 127 on first layer 113a and the end of insulating layer 127 on third layer 113c.

[0153] As shown in FIG. 3A, a first layer 113a is provided covering the pixel electrode 111a, and a second layer 113b is provided covering the pixel electrode 111b. A mask layer 118a is provided in contact with a portion of the upper surface of the first layer 113a, and a mask layer 118b is provided in contact with a portion of the upper surface of the second layer 113b. An insulating layer 125 is provided in contact with the upper and side surfaces of the mask layer 118a, the side surfaces of the first layer 113a, the upper surface of the insulating layer 255c, the upper and side surfaces of the mask layer 118b, and the side surfaces of the second layer 113b. The insulating layer 125 also covers a portion of the upper surface of the first layer 113a and a portion of the upper surface of the second layer 113b. An insulating layer 127 is provided in contact with the upper surface of the insulating layer 125. Furthermore, insulating layer 127 overlaps with part of the upper surface and side surfaces of first layer 113a and part of the upper surface and side surfaces of second layer 113b via insulating layer 125, and is in contact with at least part of the side surfaces of insulating layer 125. Common layer 114 is provided to cover first layer 113a, mask layer 118a, second layer 113b, mask layer 118b, insulating layer 125, and insulating layer 127, and common electrode 115 is provided on common layer 114.

[0154] Furthermore, the insulating layer 127 is formed in the region between the two island-shaped EL layers (the region between the first layer 113a and the second layer 113b in FIG. 3A). At this time, at least a portion of the insulating layer 127 is disposed at a position sandwiched between the side edge of one EL layer (the first layer 113a in FIG. 3A) and the side edge of the other EL layer (the second layer 113b in FIG. 3A). By providing such an insulating layer 127, it is possible to prevent the formation of divided portions and locally thin portions in the common layer 114 and the common electrode 115 formed on the island-shaped EL layers and the insulating layer 127.

[0155] 3B, the insulating layer 127 preferably has a tapered shape at its end with a taper angle θ1 in a cross-sectional view of the display device. The taper angle θ1 is the angle between the side surface of the insulating layer 127 and the substrate surface. However, the taper angle θ1 is not limited to the substrate surface, and may be the angle between the side surface of the insulating layer 127 and the upper surface of the flat portion of the second layer 113b or the upper surface of the flat portion of the pixel electrode 111b.

[0156] The taper angle θ1 of the insulating layer 127 is less than 90°, preferably 60° or less, more preferably 45° or less, and even more preferably 20° or less. By forming the end of the insulating layer 127 in such a forward tapered shape, the common layer 114 and common electrode 115 provided on the insulating layer 127 can be formed with good coverage and the occurrence of discontinuities or localized thinning can be suppressed. This improves the in-plane uniformity of the common layer 114 and common electrode 115, thereby improving the display quality of the display device.

[0157] 3A, in a cross-sectional view of the display device, the upper surface of insulating layer 127 preferably has a convex curved shape. The convex curved shape of the upper surface of insulating layer 127 preferably bulges gently toward the center. Furthermore, the convex curved portion at the center of the upper surface of insulating layer 127 preferably smoothly connects to the tapered portions at the edges. By forming insulating layer 127 in this shape, common layer 114 and common electrode 115 can be formed with good coverage over the entire insulating layer 127.

[0158] 3B, the end of insulating layer 127 is preferably positioned outside the end of insulating layer 125. This reduces unevenness on the surface on which common layer 114 and common electrode 115 are formed, and improves the coverage of common layer 114 and common electrode 115.

[0159] 3B, the insulating layer 125 preferably has a tapered shape at its end with a taper angle θ2 in a cross-sectional view of the display device. The taper angle θ2 is the angle between the side surface of the insulating layer 125 and the substrate surface. However, the taper angle θ2 is not limited to the substrate surface, and may be the angle between the side surface of the insulating layer 125 and the upper surface of the flat portion of the second layer 113b or the upper surface of the flat portion of the pixel electrode 111b.

[0160] The taper angle θ2 of the insulating layer 125 is less than 90°, preferably 60° or less, more preferably 45° or less, and even more preferably 20° or less.

[0161] 3B, the mask layer 118b preferably has a tapered shape at its edge with a taper angle θ3 in a cross-sectional view of the display device. The taper angle θ3 is the angle between the side surface of the mask layer 118b and the substrate surface. However, the taper angle θ3 is not limited to the substrate surface, and may be the angle between the top surface of the flat portion of the second layer 113b or the top surface of the flat portion of the pixel electrode 111b and the side surface of the insulating layer 127.

[0162] The taper angle θ3 of the mask layer 118b is less than 90°, and is preferably equal to or less than 60°, more preferably equal to or less than 45°, and even more preferably equal to or less than 20°. By forming the mask layer 118b in such a forward tapered shape, the common layer 114 and the common electrode 115 provided on the mask layer 118b can be formed with good coverage.

[0163] The ends of mask layer 118a and mask layer 118b are preferably positioned outside the ends of insulating layer 125. This reduces the unevenness of the surfaces on which common layer 114 and common electrode 115 are formed, and improves the coverage of common layer 114 and common electrode 115.

[0164] As will be described in detail in the second embodiment, if the insulating layer 125 and the mask layer 118 are etched at the same time, the insulating layer 125 and the mask layer below the edge of the insulating layer 127 may be removed by side etching, forming a cavity. The cavity may cause unevenness on the surface on which the common layer 114 and the common electrode 115 are formed, making it more likely that steps will occur in the common layer 114 and the common electrode 115. Therefore, by performing the etching process in two stages and performing a heat treatment between the two etchings, even if a cavity is formed in the first etching process, the heat treatment will deform the insulating layer 127, allowing the cavity to be filled.

[0165] Furthermore, because the second etching process involves etching a thin film, the amount of side etching is reduced, making it difficult for cavities to form, and even if cavities do form, they can be made extremely small. This prevents the occurrence of irregularities on the surfaces on which the common layer 114 and the common electrode 115 are formed, and also prevents the common layer 114 and the common electrode 115 from being cut off.

[0166] Since the etching process is performed twice in this manner, the taper angles θ2 and θ3 may be different from each other. Alternatively, the taper angles θ2 and θ3 may be the same. Alternatively, the taper angles θ2 and θ3 may be smaller than the taper angle θ1.

[0167] The insulating layer 127 may cover at least a portion of the side surface of the mask layer 118a and at least a portion of the side surface of the mask layer 118b. FIG. 3B shows an example in which the insulating layer 127 contacts and covers the inclined surface located at the end of the mask layer 118b formed by the first etching process, while the inclined surface located at the end of the mask layer 118b formed by the second etching process is exposed. These two inclined surfaces may be distinguishable because they have different taper angles. Alternatively, there may be little difference in the taper angles of the side surfaces formed by the two etching processes, making them indistinguishable.

[0168] 4A and 4B show an example in which the insulating layer 127 covers the entire side surfaces of the mask layer 118a and the entire side surfaces of the mask layer 118b. Specifically, in FIG. 4B, the insulating layer 127 contacts and covers both of the two inclined surfaces. This is preferable because it further reduces the unevenness of the surfaces on which the common layer 114 and the common electrode 115 are formed. FIG. 4B shows an example in which the end of the insulating layer 127 is located outside the end of the mask layer 118b. As shown in FIG. 3B, the end of the insulating layer 127 may be located inside the end of the mask layer 118b, or may be aligned or approximately aligned with the end of the mask layer 118b. Also, as shown in FIG. 4B, the insulating layer 127 may contact the second layer 113b.

[0169] 5A, 5B, 6A, and 6B show examples in which insulating layer 127 has a concave curved shape (also referred to as a constricted portion, recess, dent, or depression) on the side surface. Depending on the material and forming conditions (heating temperature, heating time, heating atmosphere, etc.) of insulating layer 127, a concave curved shape may be formed on the side surface of insulating layer 127.

[0170] 5A and 5B show an example in which insulating layer 127 covers a portion of the side surface of mask layer 118b and the remaining portion of the side surface of mask layer 118b is exposed. Figures 6A and 6B show an example in which insulating layer 127 contacts and covers the entire side surface of mask layer 118a and the entire side surface of mask layer 118b.

[0171] 4 to 6, it is preferable that the taper angles θ1 to θ3 are in the above ranges.

[0172] 3 to 6, it is preferable that one end of the insulating layer 127 overlaps the upper surface of the pixel electrode 111a, and the other end of the insulating layer 127 overlaps the upper surface of the pixel electrode 111b. By using such a structure, the ends of the insulating layer 127 can be formed on the approximately flat regions of the first layer 113a and the second layer 113b.

[0173] This makes it relatively easy to form the tapered shapes of the insulating layer 127, the insulating layer 125, and the mask layer 118. Also, peeling of the pixel electrodes 111a and 111b, the first layer 113a, and the second layer 113b can be suppressed. On the other hand, the smaller the overlapping portion between the upper surface of the pixel electrode and the insulating layer 127, the wider the light-emitting region of the light-emitting device, which increases the aperture ratio, and is therefore preferable.

[0174] The insulating layer 127 does not have to overlap the upper surfaces of the pixel electrodes. As shown in Fig. 7A, the insulating layer 127 may not overlap the upper surfaces of the pixel electrodes, but one end of the insulating layer 127 may overlap a side surface of the pixel electrode 111a, and the other end of the insulating layer 127 may overlap a side surface of the pixel electrode 111b. Alternatively, as shown in Fig. 7B, the insulating layer 127 may not overlap the pixel electrodes, but may be provided in a region sandwiched between the pixel electrodes 111a and 111b.

[0175] 7A and 7B, part or all of the upper surfaces of the inclined and flat portions (regions 103) of the first layer 113a and the second layer 113b that are located outside the upper surfaces of the pixel electrodes are covered with the mask layer 118, the insulating layer 125, and the insulating layer 127. Even with this configuration, the unevenness of the surfaces on which the common layer 114 and the common electrode 115 are formed can be reduced, and the coverage of the common layer 114 and the common electrode 115 can be improved, compared to a configuration in which the mask layer 118, the insulating layer 125, and the insulating layer 127 are not provided.

[0176] 8A, in a cross-sectional view of the display device, the upper surface of the insulating layer 127 may have a flat shape. Alternatively, as shown in FIG. 8B, the upper surface of the insulating layer 127 may have a concave curved shape. In FIG. 8B, the upper surface of the insulating layer 127 has a shape that gently bulges toward the center, i.e., a convex curved surface, and a shape that is recessed in the center and its vicinity, i.e., a concave curved surface. In FIG. 8B, the convex curved portion of the upper surface of the insulating layer 127 has a shape that smoothly connects to the tapered portions at the ends. Even when the insulating layer 127 has such a shape, the common layer 114 and the common electrode 115 can be formed with good coverage over the entire insulating layer 127.

[0177] 8B, by configuring insulating layer 127 to have a concave curved surface in the center, it is possible to alleviate stress in insulating layer 127. More specifically, by configuring insulating layer 127 to have a concave curved surface in the center, it is possible to alleviate local stress occurring at the end of insulating layer 127 and suppress one or more of film peeling between first layer 113a and mask layer 118a, film peeling between mask layer 118a and insulating layer 125, and film peeling between insulating layer 125 and insulating layer 127.

[0178] 3 to 8, by providing the insulating layer 127, the insulating layer 125, the mask layer 118a, and the mask layer 118b, the common layer 114 and the common electrode 115 can be formed with high coverage from the substantially flat region of the first layer 113a to the substantially flat region of the second layer 113b. This makes it possible to prevent the formation of divided areas in the common layer 114 and the common electrode 115 and locally thin areas.

[0179] This can prevent connection failures between the light-emitting devices due to disconnected portions in the common layer 114 and the common electrode 115, and prevent an increase in electrical resistance due to locally thin portions in the film thickness, thereby improving the display quality of the display device according to one embodiment of the present invention.

[0180] Next, the lens 133 provided on each of the light-emitting devices 130a to 130c will be described using the cross-sectional views of Figures 9A to 10B. Note that Figures 9A, 9B, 10A, and 11 exemplify elements typically included in the light-emitting device 130a. Figure 10B exemplifies elements typically included in the light-emitting devices 130a and 130b.

[0181] FIG. 9A is a comparative example in which lens 133 is not provided, and is a simplified diagram illustrating the optical path of light emitted by a light-emitting device. Note that minute reflections at the boundaries between layers are not illustrated. Most of the light emitted by the light-emitting device is extracted to the outside via a straight or nearly straight optical path. However, as shown in FIG. 9A, some of the light emitted by the light-emitting device travels laterally using common electrode 115, which is formed of a translucent conductive film provided on insulating layer 127, as a waveguide, and is not extracted to the outside. In other words, this phenomenon is one factor in reducing the light extraction efficiency.

[0182] One of the reasons why the common electrode 115 functions as a waveguide is the difference in refractive index between the common electrode 115 and the layers above and below it. Another reason is that the common electrode 115 is provided so as to extend over the insulating layer 127, which increases the angle of incidence of light that penetrates the common electrode 115 on the insulating layer 127.

[0183] 9A, a protective layer 131 is provided on the common electrode 115 in contact therewith, and a common layer 114 is provided below the common electrode 115 in contact therewith. Here, the refractive index of the common electrode 115 is defined as n 115 , the refractive index of the protective layer 131 is n 131 , the refractive index of the common layer 114 is n 114 When n 115 >n 131 , and n 115 >n 114 In this case, light incident at a large angle on each interface is likely to be totally reflected. Therefore, the light does not pass through the protective layer 131 and the common layer 114, but travels laterally using the common electrode 115 as a waveguide. Note that the refractive index here refers to the refractive index in the wavelength range of light emitted by the light-emitting device (blue to red wavelength range) or in visible light.

[0184] Furthermore, when a micro-optical resonator (microcavity) structure is applied to the light-emitting device, it is preferable to use an electrode that is optically transparent and reflective (semi-transparent / semi-reflective electrode) as the common electrode 115. For this reason, a reflective electrode may be formed on the common layer 114 side of the common electrode 115. Therefore, light reflection by this electrode is also one of the factors that cause the common electrode 115 to function as a waveguide.

[0185] 9B, in one embodiment of the present invention, a lens 133 is provided between the common electrode 115 and the protective layer 131 in a region overlapping with a light-emitting portion of the light-emitting device. Note that in FIG. 9B, the light-emitting portion refers to a region where the first layer 113a and the common layer 114 are in contact with each other. When the common layer 114 is not provided, the light-emitting portion refers to a region where the first layer 113a and the common electrode 115 are in contact with each other.

[0186] 9B, a lens having a convex surface and a flat surface on the opposite side to the convex surface is called a plano-convex lens. Lens 133 can be manufactured using the same materials and processes as insulating layer 127 described above.

[0187] In one embodiment of the present invention, the lens 133 is formed so that the surface opposite to the convex surface of the plano-convex lens is in contact with the common electrode 115. In addition, the refractive index of the lens 133 is set to n 133 When n 133 n 115 Equivalent to, preferably n 133 n 115 The configuration will be larger than

[0188] With this configuration, even if light is incident at a large angle of incidence on the interface between common electrode 115 and lens 133, it is not totally reflected, and the light passes through common electrode 115 and into lens 133. Furthermore, the light that has entered lens 133 reaches protective layer 131 and resin layer 122 provided on lens 133, but because the angle of incidence at each interface is not large, it can be extracted to the outside regardless of the refractive index of protective layer 131 and resin layer 122. Therefore, by providing lens 133 with the above-mentioned refractive index, it is possible to increase the light extraction efficiency.

[0189] Also, n 133 n 115 Even if the difference is small, even if light with a relatively large incident angle is incident, total reflection is unlikely to occur, and the light is likely to exit from the common electrode 115 to the lens 133. In this case, for example, n 133 n 115 a value 1% to 30% smaller than n 133 n 115 a value 1% to 20% smaller than n 133 n 115 The value should be 1% to 10% smaller than the

[0190] In addition, n 133 and n 131 n 115 Equivalent to, or n 133 and n 131 are equivalent and they are n 115 10A, a protective layer 131 may be provided between the common electrode 115 and the lens 133.

[0191] 10B, the ends of the lenses 133 in adjacent pixels may be connected. This configuration can eliminate the area where the common electrode 115 and the protective layer 131 come into contact. Therefore, the interface between the common electrode 115 and the protective layer 131, which causes total reflection, can be eliminated, and the light extraction efficiency can be improved.

[0192] 11, an insulating layer 134 may be provided between the common electrode 115 and the lens 133. The insulating layer 134 is a layer for adjusting the distance between the lens 133 and the light-emitting section. The insulating layer 134 is preferably made of the same material as the lens 133. The configurations shown in FIGS. 10A, 10B, and 11 can be combined as appropriate.

[0193] The protective layer 131 provided on the light-emitting devices 130a, 130b, and 130c may have a single layer structure or a laminated structure of two or more layers. By providing the protective layer 131, the reliability of the light-emitting devices can be improved.

[0194] There is no restriction on the conductivity of the protective layer 131. The protective layer 131 can be made of at least one of an insulating film, a semiconductor film, and a conductive film.

[0195] The protective layer 131 has an inorganic film, which can prevent oxidation of the common electrode 115, prevent impurities (moisture, oxygen, etc.) from entering the light-emitting device, and so on, thereby suppressing deterioration of the light-emitting device and improving the reliability of the display device.

[0196] For example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film can be used for the protective layer 131. Specific examples of these inorganic insulating films are as given in the description of the insulating layer 125. In particular, the protective layer 131 preferably has an insulating nitride film or an insulating nitride oxide film, and more preferably has an insulating nitride film.

[0197] Alternatively, an inorganic film containing In-Sn oxide (also referred to as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO) can be used for the protective layer 131. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0198] When light emitted from the light-emitting device is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0199] The protective layer 131 may be, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film. By using such a laminated structure, impurities (water, oxygen, etc.) can be prevented from penetrating into the EL layer.

[0200] Furthermore, the protective layer 131 may have an organic film. The protective layer 131 may have both an organic film and an inorganic film. Examples of organic materials that can be used for the protective layer 131 include the organic insulating materials that can be used for the insulating layer 127.

[0201] The protective layer 131 may have a two-layer structure formed using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed using the ALD method, and the second layer of the protective layer 131 may be formed using the sputtering method.

[0202] A light-shielding layer may be provided on the surface of substrate 120 facing resin layer 122. Various optical members may be disposed on the outside of substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. Surface protection layers such as an antistatic film that prevents dust from adhering, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that prevents scratches from occurring during use, and an impact absorbing layer may be disposed on the outside of substrate 120.

[0203] As a surface protection layer, a glass layer or a silica layer (SiO x The surface protection layer can be preferably formed of a material such as DLC (diamond-like carbon), aluminum oxide (AlO x ), polyester-based materials, or polycarbonate-based materials may also be used. Note that it is preferable to use a material with high transmittance to visible light for the surface protection layer. It is also preferable to use a material with high hardness for the surface protection layer.

[0204] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0205] The substrate 120 may be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 may be made of glass having a thickness sufficient to provide flexibility.

[0206] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0207] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0208] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic resin films.

[0209] Furthermore, when a film is used as a substrate, the film may absorb water, causing changes in shape, such as wrinkles, in the display device. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0210] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. In particular, a material with low moisture permeability, such as epoxy resin, is preferable. Alternatively, a two-component resin may be used. Alternatively, an adhesive sheet or the like may be used.

[0211] Figure 12A shows a top view of the display device 100, which is different from that shown in Figure 1A. The pixel 110 shown in Figure 12A is made up of four types of subpixels: subpixels 110a, 110b, 110c, and 110d.

[0212] The subpixels 110a, 110b, 110c, and 110d may each have a light-emitting device that emits light of a different color, such as four subpixels of R, G, B, and W, four subpixels of R, G, B, and Y, or four subpixels of R, G, B, and IR.

[0213] In addition, the display device of one embodiment of the present invention may include a light-receiving device in each pixel. For example, three of the four subpixels of the pixel 110 shown in FIG. 12A may include a light-emitting device, and the remaining one may include a light-receiving device.

[0214] A pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light-receiving device and generates an electric charge. The amount of electric charge generated by the light-receiving device is determined based on the amount of light incident on the light-receiving device.

[0215] The light-receiving device can detect either or both of visible light and infrared light. When detecting visible light, it can detect one or more of colors such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. When detecting infrared light, it is preferable because it enables detection of an object even in a dark place.

[0216] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0217] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL device.

[0218] The light-receiving device is driven by applying a reverse bias between the pixel electrode and the common electrode, so that it can detect light incident on the light-receiving device, generate electric charges, and extract them as a current.

[0219] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called a photoelectric conversion layer) of the light-receiving device is formed not by using a fine metal mask but by forming a film that will become the active layer on the entire surface and then processing it, so that the island-shaped active layer can be formed with a uniform thickness. Furthermore, by providing a mask layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0220] The sixth embodiment can be referred to for the configuration and materials of the light receiving device.

[0221] Fig. 12B shows a cross-sectional view taken along dashed line X3-X4 in Fig. 12A. Note that Fig. 1B can be referred to for a cross-sectional view of the subpixels 110a and 110b in Fig. 12A, and Fig. 2A or 2B can be referred to for a cross-sectional view taken along dashed line Y1-Y2.

[0222] 12B, in display device 100, an insulating layer is provided on layer 101 including transistors, and light-emitting device 130c and light-receiving device 150 are provided on the insulating layer, with lenses 133 provided for light-emitting device 130c and light-receiving device 150. A protective layer 131 is provided to cover lens 133. Substrate 120 is bonded to protective layer 131 by resin layer 122. An insulating layer 125 and an insulating layer 127 on insulating layer 125 are provided in the region between adjacent light-emitting devices and light-receiving devices 150.

[0223] FIG. 12B shows an example in which light emitted from the light-emitting device 130c is emitted toward the substrate 120 side via the lens 133, and light entering from the substrate 120 side is incident on the light-receiving device 150 via the lens 133 (see light Lem and light Lin).

[0224] The configuration of the light-emitting device 130c is as described above.

[0225] The light-receiving device 150 has a pixel electrode 111d on the insulating layer 255c, a fourth layer 113d on the pixel electrode 111d, a common layer 114 on the fourth layer 113d, and a common electrode 115 on the common layer 114.

[0226] Here, the fourth layer 113d includes at least an active layer and preferably has multiple functional layers. Examples of functional layers include a carrier transport layer (hole transport layer and electron transport layer) and a carrier block layer (hole block layer and electron block layer). It is also preferable to have one or more layers on the active layer. Having another layer between the active layer and the mask layer can prevent the active layer from being exposed to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the active layer. This improves the reliability of the light-receiving device 150. Therefore, it is preferable that the fourth layer 113d has an active layer and a carrier block layer (hole block layer or electron block layer) or a carrier transport layer (electron transport layer or hole transport layer) on the active layer.

[0227] The fourth layer 113d is a layer provided in the light-receiving device 150 but not in the light-emitting device. However, functional layers other than the active layer included in the fourth layer 113d may have the same material as functional layers other than the light-emitting layers included in the first to third layers 113a to 113c. On the other hand, the common layer 114 is a continuous layer shared by the light-emitting device and the light-receiving device.

[0228] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same functions in the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0229] A mask layer 118a is located between the first layer 113a and the insulating layer 125, and a mask layer 118d is located between the fourth layer 113d and the insulating layer 125. The mask layer 118a is a remaining portion of a mask layer that was provided on the first layer 113a when the first layer 113a was processed. The mask layer 118d is a remaining portion of a mask layer that was provided in contact with the upper surface of the fourth layer 113d, which is a layer including an active layer, when the fourth layer 113d was processed. The mask layers 118a and 118d may be made of the same material or different materials.

[0230] 12A shows an example in which the aperture ratios (also referred to as the sizes of the light-emitting regions or light-receiving regions) of the subpixels 110a, 110b, 110c, and 110d are the same, but this embodiment of the present invention is not limited thereto. The aperture ratios of the subpixels 110a, 110b, 110c, and 110d can be determined as appropriate. The aperture ratios of the subpixels 110a, 110b, 110c, and 110d may be different from one another, or two or more of them may be equal or approximately equal.

[0231] The subpixel 110d may have a higher aperture ratio than at least one of the subpixels 110a, 110b, and 110c. The larger light-receiving area of ​​the subpixel 110d may facilitate object detection. For example, depending on the resolution of the display device and the circuit configuration of the subpixels, the aperture ratio of the subpixel 110d may be higher than the aperture ratios of the other subpixels.

[0232] The subpixel 110d may have a smaller aperture ratio than at least one of the subpixels 110a, 110b, and 110c. A smaller light-receiving area of ​​the subpixel 110d narrows the imaging range, reducing blurring in the imaging results and improving resolution. This is preferable because it enables high-definition or high-resolution imaging.

[0233] In this way, the sub-pixel 110d can be configured to have a detection wavelength, resolution, and aperture ratio suited to the application.

[0234] Furthermore, it is preferable that the diameter (L2) of the lens 133 provided on the light-receiving device 150 is larger than the diameter (L1) of the light-receiving portion of the light-receiving device 150. With this configuration, light incident on an area wider than the light-receiving portion can be condensed and incident on the light-receiving portion, thereby increasing the optical sensitivity. The light-receiving portion is defined as the area where the fourth layer 113d and the common layer 114 contact each other. Furthermore, if the common layer 114 is not provided, the light-receiving portion is defined as the area where the fourth layer 113d and the common electrode 115 contact each other.

[0235] In a display device according to one embodiment of the present invention, the EL layer is provided in an island shape for each light-emitting device, thereby suppressing leakage current between subpixels. This prevents crosstalk due to unintended light emission, resulting in a display device with extremely high contrast. Furthermore, by providing an insulating layer having a tapered edge between adjacent island-shaped EL layers, the occurrence of discontinuities during the formation of a common electrode can be suppressed, and the formation of locally thin portions in the common electrode can be prevented. This suppresses connection defects in the common layer and common electrode due to the disconnected portions and increases in electrical resistance due to locally thin portions.

[0236] Therefore, the display device of one embodiment of the present invention can achieve both high resolution and high display quality. Furthermore, in the display device of one embodiment of the present invention, a lens is provided on the common electrode that overlaps with the light-emitting region. By providing the lens, light traveling laterally through the common electrode as a waveguide can be suppressed, thereby improving light extraction efficiency. In other words, a display device with high brightness can be formed.

[0237] In one embodiment of the present invention, a display device including a light-receiving device can also have a lens over the light-receiving device. By making the diameter of the lens provided over the light-receiving device larger than the effective area of ​​the light-receiving portion, the light-collecting ability can be increased, and the photosensitivity of the light-receiving device can be improved.

[0238] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0239] (Embodiment 2) In this embodiment, a manufacturing method of a display device according to one embodiment of the present invention will be described with reference to FIGS. 13 to 18. Note that description of materials and formation methods of elements that are similar to those described in Embodiment 1 may be omitted. In addition, details of the structure of a light-emitting device will be described in Embodiment 5.

[0240] 13 to 18 show a cross-sectional view taken along dashed dotted line X1-X2 and a cross-sectional view taken along dashed dotted line Y1-Y2 shown in Fig. 1A side by side. Fig. 19 shows an enlarged view of the end of insulating layer 127 and its vicinity.

[0241] The thin films (insulating films, semiconductor films, conductive films, etc.) that make up display devices can be formed using film formation methods such as sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), and atomic layer deposition (ALD). CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. Metal organic chemical vapor deposition (MOCVD) is another type of thermal CVD method.

[0242] In addition, thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0243] Light-emitting devices and light-receiving devices can be fabricated using vacuum processes such as vapor deposition, and solution processes such as spin coating and inkjet printing. Film formation methods in vacuum processes include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD).

[0244] In particular, the functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, charge generation layer, etc.) contained in the EL layer are preferably formed by a vapor deposition method (vacuum vapor deposition method, etc.), a coating method (dip coating method, die coating method, bar coating method, spin coating method, spray coating method, etc.), a printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexography (relief printing) method, gravure method, microcontact method, etc.), or the like.

[0245] Furthermore, when processing the thin film that constitutes the display device, it can be processed using a photolithography method, an etching method, or the like. Alternatively, the thin film may be processed using a sandblasting method, a lift-off method, or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask. Furthermore, a nanoimprint method may be used in place of the photolithography method.

[0246] There are two typical methods using photolithography. One is to form a resist mask on the thin film to be processed, process the thin film by etching, and then remove the resist mask. The other is to form a photosensitive thin film, then expose and develop it to process the thin film into the desired shape.

[0247] In photolithography, the light used for exposure can be i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed using immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used for exposure. Visible light can also be used in some cases.

[0248] In addition, an electron beam can be used instead of light for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferable because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0249] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0250] First, insulating layers 255a, 255b, and 255c are formed in this order on the transistor-containing layer 101. Then, pixel electrodes 111a, 111b, and 111c and a conductive layer 123 are formed on the insulating layer 255c (FIG. 13A). The pixel electrodes can be formed by, for example, sputtering or vacuum evaporation.

[0251] Next, it is preferable to perform a hydrophobic treatment on the pixel electrodes. The hydrophobic treatment can change the surface to be treated from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface to be treated. By performing the hydrophobic treatment on the pixel electrodes, the adhesion between the pixel electrodes and the film (here, film 113A) to be formed in a later process can be improved, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily required.

[0252] The hydrophobic treatment can be performed by modifying the pixel electrodes with fluorine, for example, by treatment with a fluorine-containing gas, heat treatment, or plasma treatment in a fluorine-containing gas atmosphere.

[0253] Examples of fluorine-containing gases that can be used include fluorocarbon gases such as carbon tetrafluoride (CF4) gas, C4F6 gas, C2F6 gas, C4F8 gas, and C5F8. Alternatively, SF6 gas, NF3 gas, and CHF3 gas may be used. Helium gas, argon gas, hydrogen gas, or the like may be added to these gases as appropriate.

[0254] The surface of the pixel electrode can be hydrophobized by performing a plasma treatment on the surface of the pixel electrode in a gas atmosphere containing a Group 18 element such as argon, followed by a treatment using a silylating agent. Examples of silylating agents that can be used include hexamethyldisilazane (HMDS) and trimethylsilylimidazole (TMSI). Furthermore, the surface of the pixel electrode can be hydrophobized by performing a plasma treatment on the surface of the pixel electrode in a gas atmosphere containing a Group 18 element such as argon, followed by a treatment using a silane coupling agent.

[0255] By performing plasma treatment on the surface of the pixel electrode in a gas atmosphere containing a Group 18 element such as argon, it is possible to damage the surface of the pixel electrode. This makes it easier for the methyl groups contained in the silylating agent such as HMDS to bond to the surface of the pixel electrode. It also makes it easier for silane coupling to occur using a silane coupling agent. As described above, by performing plasma treatment on the surface of the pixel electrode in a gas atmosphere containing a Group 18 element such as argon, and then performing treatment using a silylating agent or silane coupling agent, it is possible to hydrophobize the surface of the pixel electrode.

[0256] The treatment using a silylating agent or a silane coupling agent can be carried out by applying the silylating agent or the silane coupling agent by, for example, a spin coating method, a dipping method, etc. Alternatively, the treatment using a silylating agent or the silane coupling agent can be carried out by forming a film containing a silylating agent or a film containing a silane coupling agent on the pixel electrode or the like by a gas phase method.

[0257] In the vapor phase method, first, a material containing a silylating agent or a material containing a silane coupling agent is volatilized to incorporate the silylating agent or the silane coupling agent into the atmosphere. Next, a substrate on which pixel electrodes and the like are formed is placed in the atmosphere. This allows a film containing the silylating agent or the silane coupling agent to be formed on the pixel electrodes, thereby making the surface of the pixel electrodes hydrophobic.

[0258] Subsequently, a film 113A, which will later become the first layer 113a, is formed on the pixel electrode (FIG. 13A).

[0259] 13A, in the cross-sectional view taken along dashed dotted line Y1-Y2, the film 113A is not formed on the conductive layer 123. For example, by using a mask (also called an area mask or a rough metal mask to distinguish it from a fine metal mask) for defining the film formation area, the film 113A can be formed only in the desired region. By employing a film formation process using an area mask and a processing process using a resist mask, a light-emitting device can be fabricated through a relatively simple process.

[0260] As described in Embodiment 1, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Specifically, the heat resistance temperature of the compound contained in the film 113A is set to 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, more preferably 140° C. or higher and 180° C. or lower. This can improve the reliability of the light-emitting device. Furthermore, the upper limit of the temperature that can be applied in the manufacturing process of the display device can be increased. Therefore, the range of choices for materials and formation methods used for the display device can be expanded, which can improve the manufacturing yield and reliability.

[0261] The film 113A can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method, or may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0262] Subsequently, a mask film 118A that will later become mask layer 118a and a mask film 119A that will later become mask layer 119a are formed in this order on film 113A and conductive layer 123 (FIG. 13A).

[0263] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure of mask film 118A and mask film 119A, but the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0264] By providing a mask layer on the film 113A, damage to the film 113A during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0265] The mask film 118A is made of a film that is highly resistant to the processing conditions of the film 113A, specifically, a film that has a high etching selectivity with respect to the film 113A. The mask film 119A is made of a film that has a high etching selectivity with respect to the mask film 118A.

[0266] Furthermore, mask films 118A and 119A are formed at a temperature lower than the heat-resistant temperature of film 113A. The substrate temperature when forming mask films 118A and 119A is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, more preferably 100°C or lower, and even more preferably 80°C or lower.

[0267] Examples of the heat resistance temperature include the glass transition point, softening point, melting point, thermal decomposition temperature, and 5% weight loss temperature. The heat resistance temperature of films 113A to 113C (i.e., first to third layers 113a to 113c) can be any of these temperatures, preferably the lowest temperature among them.

[0268] As described above, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Therefore, the substrate temperature during the formation of the mask film can be set to 100° C. or higher, 120° C. or higher, or 140° C. or higher. The higher the film formation temperature, the denser the inorganic insulating film can be and the higher the barrier property. Therefore, by forming the mask film at such a temperature, damage to the film 113A can be further reduced, and the reliability of the light-emitting device can be improved.

[0269] It is preferable to use a film that can be removed by wet etching for the mask film 118A and the mask film 119A. By using the wet etching method, damage to the film 113A during processing of the mask film 118A and the mask film 119A can be reduced compared to when using the dry etching method.

[0270] The mask films 118A and 119A can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. Alternatively, they may be formed by the wet film formation method described above.

[0271] It is preferable that the mask film 118A formed on and in contact with the film 113A be formed using a formation method that causes less damage to the film 113A than the mask film 119A. For example, it is preferable to form the mask film 118A using the ALD method or the vacuum deposition method rather than the sputtering method.

[0272] The mask film 118A and the mask film 119A may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0273] Mask films 118A and 119A can be made of metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet rays for one or both of mask films 118A and 119A is preferable because it can prevent ultraviolet rays from irradiating film 113A and suppress deterioration of film 113A.

[0274] Furthermore, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and indium tin oxide containing silicon can be used for mask film 118A and mask film 119A, respectively.

[0275] Instead of the gallium, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used. In particular, it is preferable that M is one or more elements selected from gallium, aluminum, and yttrium.

[0276] Furthermore, a film containing a material that has light-shielding properties, particularly against ultraviolet light, can be used as the mask film. For example, a film that is reflective to ultraviolet light or a film that absorbs ultraviolet light can be used. As the light-shielding material, various materials can be used, such as metals, insulators, semiconductors, and semimetals that have light-shielding properties against ultraviolet light. However, since part or all of the mask film will be removed in a later process, it is preferable that the film be a film that can be processed by etching, and particularly that it has good processability.

[0277] Semiconductor materials such as silicon or germanium, which are highly compatible with semiconductor manufacturing processes, can be used for the mask film. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, nonmetallic (semimetallic) materials such as carbon or their compounds can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these, can be used. Alternatively, oxides containing the above metals, such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0278] By using a film containing a material with UV-blocking properties for the mask film, it is possible to prevent UV rays from irradiating the EL layer during the exposure process, etc. By preventing UV damage to the EL layer, the reliability of the light-emitting device can be improved.

[0279] The same effect can be achieved when a film containing a material that blocks ultraviolet light is used as the material for the insulating film 125A, which will be described later.

[0280] Furthermore, the mask films 118A and 119A can each be made of various inorganic insulating films that can be used for the protective layer 131. In particular, oxide insulating films are preferable because they have higher adhesion to the film 113A than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can each be used for the mask films 118A and 119A. For example, aluminum oxide films can be formed as the mask films 118A and 119A using the ALD method. Using the ALD method is preferable because it can reduce damage to the underlying layer (especially the EL layer).

[0281] The mask film 118A can be an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method, and the mask film 119A can be an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method.

[0282] The same inorganic insulating film can be used for both the mask film 118A and the insulating layer 125 to be formed later. For example, an aluminum oxide film formed by the ALD method can be used for both the mask film 118A and the insulating layer 125. Here, the same film formation conditions may be applied to the mask film 118A and the insulating layer 125, or different film formation conditions may be applied to each of them.

[0283] By forming the mask film 118A under the same conditions as the insulating layer 125, the mask film 118A can be made into an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the mask film 118A is a layer that will be mostly or entirely removed in a later step, it is preferable that it be easy to process. Therefore, it is preferable that the mask film 118A is formed under conditions where the substrate temperature during film formation is lower than that of the insulating layer 125.

[0284] An organic material may be used for one or both of mask films 118A and 119A. As the organic material, a material that can be dissolved in a chemically stable solvent may be used for at least the film located at the top of film 113A. Materials that dissolve in water or alcohol are particularly suitable. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature in a short time, thereby reducing thermal damage to film 113A.

[0285] Mask membrane 118A and mask membrane 119A may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.

[0286] The mask film 118A can be an organic film (e.g., a PVA film) formed using either a vapor deposition method or the above-mentioned wet film formation method, and the mask film 119A can be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.

[0287] As described in Embodiment 1, in the display device according to one embodiment of the present invention, part of the mask film may remain as a mask layer.

[0288] Subsequently, a resist mask 190a is formed on the mask film 119A (FIG. 13A). The resist mask 190a can be formed by applying a photosensitive resin (photoresist) and then performing exposure and development.

[0289] The resist mask 190a may be made of either a positive resist material or a negative resist material.

[0290] The resist mask 190a is provided in a position overlapping with the pixel electrode 111a. The resist mask 190a is preferably provided also in a position overlapping with the conductive layer 123. This can prevent the conductive layer 123 from being damaged during the manufacturing process of the display device. Note that the resist mask 190a does not necessarily have to be provided over the conductive layer 123.

[0291] 13A, the resist mask 190a is preferably provided so as to cover from the end of the first layer 113a to the end of the conductive layer 123 (the end on the first layer 113a side). As a result, even after processing the mask films 118A and 119A, the ends of the mask layers 118a and 119a overlap with the end of the first layer 113a. Furthermore, because the mask layers 118a and 119a are provided so as to cover from the end of the first layer 113a to the end of the conductive layer 123 (the end on the first layer 113a side), exposure of the insulating layer 255c can be suppressed (see the cross-sectional view between Y1 and Y2 in FIG. 13C).

[0292] This prevents the insulating layers 255a to 255c and parts of the insulating layers included in the layer 101 including the transistors from being removed by etching or the like, thereby preventing the conductive layers included in the layer 101 including the transistors from being exposed. This prevents the conductive layers from being unintentionally electrically connected to other conductive layers. For example, this prevents short-circuiting between the conductive layers and the common electrode 115.

[0293] Next, a resist mask 190a is used to remove a portion of the mask film 119A, thereby forming a mask layer 119a (FIG. 13B). The mask layer 119a remains on the pixel electrode 111a and on the conductive layer 123. Then, the resist mask 190a is removed. Next, using the mask layer 119a as a mask (also referred to as a hard mask), a portion of the mask film 118A is removed, thereby forming a mask layer 118a (FIG. 13C).

[0294] The mask films 118A and 119A can be processed by wet etching or dry etching, respectively. The mask films 118A and 119A are preferably processed by anisotropic etching.

[0295] Compared to the case of using dry etching, the use of wet etching can reduce damage to film 113A during processing of mask film 118A and mask film 119A. When using wet etching, it is preferable to use a chemical solution such as a developer, a tetramethylammonium hydroxide solution (TMAH), diluted hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0296] In processing mask film 119A, film 113A is not exposed, and therefore the range of processing methods available is wider than in processing mask film 118A. Specifically, even when a gas containing oxygen is used as an etching gas in processing mask film 119A, deterioration of film 113A can be further suppressed.

[0297] Furthermore, when dry etching is used to process the mask film 118A, deterioration of the film 113A can be suppressed by not using a gas containing oxygen as the etching gas. When dry etching is used, it is preferable to use a gas containing a noble gas such as CF4, C4F8, SF6, CHF3, Cl2, HO, BCl3, or He as the etching gas.

[0298] When an aluminum oxide film formed by ALD is used as the mask film 118A, the mask film 118A can be processed by dry etching using CHF3 and He, or CHF3, He, and CH4. When an In-Ga-Zn oxide film formed by sputtering is used as the mask film 119A, the mask film 119A can be processed by wet etching using diluted phosphoric acid. Alternatively, the mask film 119A can be processed by dry etching using CH4 and Ar. Alternatively, the mask film 119A can be processed by wet etching using diluted phosphoric acid. When a tungsten film formed by sputtering is used as the mask film 119A, the mask film 119A can be processed by dry etching using SF6, CF4 and O2, or CF4, Cl2, and O2.

[0299] The resist mask 190a can be removed by ashing using oxygen plasma or the like. Alternatively, oxygen gas and a noble gas such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 190a may be removed by wet etching. In this case, the mask film 118A is located on the outermost surface, and the film 113A is not exposed. Therefore, damage to the film 113A can be suppressed during the process of removing the resist mask 190a. This also broadens the range of methods for removing the resist mask 190a.

[0300] Subsequently, the mask layer 119a and the mask layer 118a are used as a hard mask to remove a portion of the film 113A, thereby forming a first layer 113a (FIG. 13C).

[0301] 13C, a laminated structure of the first layer 113a, mask layer 118a, and mask layer 119a remains on the pixel electrode 111a, and the pixel electrodes 111b and 111c are exposed.

[0302] 13C shows an example in which the edge of the first layer 113a is positioned outside the edge of the pixel electrode 111a. This configuration can increase the aperture ratio of the pixel. Although not shown in FIG. 13C, the etching process may result in the formation of a recess in the insulating layer 255c in a region that does not overlap with the first layer 113a.

[0303] Furthermore, because the first layer 113a covers the top and side surfaces of the pixel electrode 111a, subsequent processes can be performed without exposing the pixel electrode 111a. If the edges of the pixel electrode 111a are exposed, corrosion may occur during an etching process or the like. Products produced by corrosion of the pixel electrode 111a may be unstable, and there is a concern that they may dissolve in the solution in wet etching or scatter into the atmosphere in dry etching.

[0304] When the by-products dissolve in the solution or scatter into the atmosphere, they may adhere to the surface to be treated and the side surfaces of the first layer 113a, adversely affecting the characteristics of the light-emitting devices or forming leak paths between multiple light-emitting devices. Also, in the region where the edge of the pixel electrode 111a is exposed, the adhesion between the adjacent layers may decrease, making the first layer 113a or the pixel electrode 111a more susceptible to peeling.

[0305] Therefore, by using a structure in which the first layer 113a covers the upper and side surfaces of the pixel electrode 111a, it is possible to improve the yield and characteristics of the light-emitting device.

[0306] In the region corresponding to the connection portion 140, the laminated structure of the mask layer 118a and the mask layer 119a remains on the conductive layer 123.

[0307] 13C , the mask layers 118a and 119a are provided to cover the ends of the first layer 113a and the conductive layer 123, and the insulating layer 255c is not exposed. Therefore, the insulating layers 255a to 255c and parts of the insulating layers included in the layer 101 including the transistors are removed by etching or the like, which can prevent the conductive layers included in the layer 101 including the transistors from being exposed. This can prevent the conductive layers from being unintentionally electrically connected to other conductive layers.

[0308] The film 113A is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0309] When dry etching is used, deterioration of the film 113A can be suppressed by not using a gas containing oxygen as the etching gas.

[0310] Alternatively, a gas containing oxygen may be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can reduce damage to the film 113A. Furthermore, problems such as adhesion of reaction products that occur during etching can be reduced.

[0311] When dry etching is used, it is preferable to use a gas containing one or more of H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a noble gas such as He or Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, a gas containing H2 and Ar, or a gas containing CF4 and He may be used as the etching gas. Alternatively, a gas containing CF4, He, and oxygen may be used as the etching gas. Alternatively, a gas containing H2 and Ar, or a gas containing oxygen may be used as the etching gas.

[0312] As described above, in one embodiment of the present invention, a resist mask 190a is formed over the mask film 119A, and part of the mask film 119A is removed using the resist mask 190a, thereby forming the mask layer 119a. Then, part of the film 113A is removed using the mask layer 119a as a hard mask, thereby forming the first layer 113a. Therefore, it can be said that the first layer 113a is formed by processing the film 113A by photolithography. Note that part of the film 113A may be removed using the resist mask 190a. Then, the resist mask 190a may be removed.

[0313] Next, it is preferable to perform a hydrophobic treatment on the pixel electrode. When processing the film 113A, the surface state of the pixel electrode may change to a hydrophilic state. By performing a hydrophobic treatment on the pixel electrode, it is possible to improve the adhesion between the pixel electrode and the film (here, film 113B) formed in a later process, and to suppress film peeling. Note that the hydrophobic treatment is not necessarily required.

[0314] Subsequently, a film 113B, which will later become the second layer 113b, is formed on the pixel electrodes 111b and 111c and on the mask layer 119a (FIG. 14A).

[0315] Film 113B can be formed using methods similar to those that can be used to form film 113A.

[0316] Next, a mask film 118B, which will later become mask layer 118b, and a mask film 119B, which will later become mask layer 119b, are formed in this order on film 113B, and then a resist mask 190b is formed (FIG. 14A). The materials and formation methods of mask films 118B and 119B are the same as those applicable to mask films 118A and 119A. The materials and formation methods of resist mask 190b are the same as those applicable to resist mask 190a.

[0317] The resist mask 190b is provided at a position overlapping the pixel electrode 111b.

[0318] Next, using the resist mask 190b, a portion of the mask film 119B is removed to form a mask layer 119b. The mask layer 119b remains on the pixel electrode 111b. Thereafter, the resist mask 190b is removed. Next, using the mask layer 119b as a mask, a portion of the mask film 118B is removed to form a mask layer 118b.

[0319] Subsequently, using the mask layer 119b and the mask layer 118b as a hard mask, a portion of the film 113B is removed to form a second layer 113b (FIG. 14B).

[0320] 14B, a laminated structure of the second layer 113b, mask layer 118b, and mask layer 119b remains on the pixel electrode 111b, and the mask layer 119a and pixel electrode 111c are exposed.

[0321] Next, it is preferable to perform a hydrophobic treatment on the pixel electrode. When processing the film 113B, the surface state of the pixel electrode may change to a hydrophilic state. By performing a hydrophobic treatment on the pixel electrode, it is possible to improve the adhesion between the pixel electrode and the film (here, film 113C) formed in a later process, and to suppress film peeling. Note that the hydrophobic treatment is not necessarily required.

[0322] Subsequently, a film 113C that will later become the third layer 113c is formed on the pixel electrode 111c and the mask layers 119a and 119b (FIG. 14B).

[0323] Film 113C can be formed using methods similar to those that can be used to form film 113A.

[0324] Next, a mask film 118C, which will later become mask layer 118c, and a mask film 119C, which will later become mask layer 119c, are formed in this order on film 113C, and then a resist mask 190c is formed (FIG. 14B). The materials and formation methods of mask films 118C and 119C are the same as those applicable to mask films 118A and 119A. The materials and formation methods of resist mask 190c are the same as those applicable to resist mask 190a.

[0325] The resist mask 190c is provided at a position overlapping the pixel electrode 111c.

[0326] Next, a part of the mask film 119C is removed using the resist mask 190c to form a mask layer 119c. The mask layer 119c remains on the pixel electrode 111c. Then, the resist mask 190c is removed.

[0327] Subsequently, using the mask layer 119c as a mask, a portion of the mask film 118C is removed to form a mask layer 118c. Subsequently, using the mask layer 119c and the mask layer 118c as a hard mask, a portion of the film 113C is removed to form a third layer 113c (FIG. 14C).

[0328] 14C, a laminated structure of the third layer 113c, the mask layer 118c, and the mask layer 119c remains on the pixel electrode 111c, and the mask layers 119a and 119b are exposed.

[0329] The side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c are preferably perpendicular or approximately perpendicular to the surface on which they are formed. For example, the angle between the surface on which they are formed and these side surfaces is preferably 60° to 90°.

[0330] As described above, the distance between any two adjacent layers among the first layer 113a, the second layer 113b, and the third layer 113c formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, this distance can be defined as the distance between any two adjacent opposing edges among the first layer 113a, the second layer 113b, and the third layer 113c. In this way, narrowing the distance between the island-shaped EL layers can provide a display device with high definition and a large aperture ratio.

[0331] 12A and 12B, when a display device having both a light-emitting device and a light-receiving device is manufactured, the fourth layer 113d of the light-receiving device is formed in the same order as the first to third layers 113a to 113c. The order of forming the first to fourth layers 113a to 113d is not particularly limited.

[0332] By forming the layer with higher adhesion to the pixel electrode first, peeling of the film during the process can be suppressed. For example, if the first to third layers 113a to 113c have higher adhesion to the pixel electrode than the fourth layer 113d, it is preferable to form the first to third layers 113a to 113c first. Furthermore, the thickness of the layer formed first may affect the distance between the substrate and a mask for defining the film formation area in the subsequent layer formation process. By forming the thinner layer first, shadowing (the formation of a layer in a shadow area) can be suppressed.

[0333] When forming a light-emitting device with a tandem structure, the first to third layers 113a to 113c are often thicker than the fourth layer 113d, so it is preferable to form the fourth layer 113d first. Furthermore, when a film is formed by a wet process using a polymer material, it is preferable to form the film first. For example, when a polymer material is used for the active layer, it is preferable to form the fourth layer 113d first. As described above, by determining the order of formation depending on the material, film formation method, etc., it is possible to increase the yield in manufacturing display devices.

[0334] Next, it is preferable to remove mask layers 119a, 119b, and 119c (FIG. 15A). Depending on the subsequent process, mask layers 118a, 118b, 118c, 119a, 119b, and 119c may remain on the display device. By removing mask layers 119a, 119b, and 119c at this stage, it is possible to prevent mask layers 119a, 119b, and 119c from remaining on the display device.

[0335] When a conductive material is used for the mask layers 119a, 119b, and 119c, the mask layers 119a, 119b, and 119c can be removed in advance to prevent leakage current and capacitance from being generated by the remaining mask layers 119a, 119b, and 119c.

[0336] In this embodiment, the case where the mask layers 119a, 119b, and 119c are removed will be described as an example, but the mask layers 119a, 119b, and 119c do not have to be removed. For example, if the mask layers 119a, 119b, and 119c contain the aforementioned material that blocks ultraviolet light, it is preferable to proceed to the next step without removing the mask layers, as this can protect the EL layer from ultraviolet light.

[0337] The mask layer removal process can be performed using the same method as the mask layer processing process. In particular, using wet etching can reduce damage to the first layer 113a, the second layer 113b, and the third layer 113c when removing the mask layer compared to using dry etching.

[0338] The mask layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0339] After removing the mask layer, heat treatment may be performed to remove water contained in the first layer 113a, the second layer 113b, and the third layer 113c, and water adsorbed on the surfaces of the first layer 113a, the second layer 113b, and the third layer 113c. The heat treatment is preferably performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced-pressure atmosphere is preferable because it allows drying at a lower temperature.

[0340] Subsequently, an insulating film 125A, which will later become the insulating layer 125, is formed to cover the pixel electrode, the first layer 113a, the second layer 113b, the third layer 113c, the mask layer 118a, the mask layer 118b, and the mask layer 118c (FIG. 15A).

[0341] Next, insulating film 127a is formed on insulating film 125A (FIG. 15B). Here, it is preferable that the upper surface of insulating film 125A has a high affinity with the resin composition (e.g., a photosensitive resin composition containing an acrylic resin) used for insulating film 127a. To improve this affinity, it is preferable to perform a surface treatment to hydrophobize (or increase the hydrophobicity of) the upper surface of insulating film 125A. For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of insulating film 125A in this way, insulating film 127a can be formed with good adhesion. Note that the surface treatment may be the hydrophobization treatment described above.

[0342] The insulating films 125A and 127a are preferably formed by a method that causes less damage to the first layer 113a, the second layer 113b, and the third layer 113c. In particular, since the insulating film 125A is formed in contact with the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c, it is preferably formed by a method that causes less damage to the first layer 113a, the second layer 113b, and the third layer 113c than the insulating film 127a.

[0343] The insulating films 125A and 127a are formed at a temperature lower than the heat-resistant temperatures of the first layer 113a, the second layer 113b, and the third layer 113c, respectively. By increasing the substrate temperature during film formation, the insulating film 125A can be formed to have a low impurity concentration and a high barrier property against at least one of water and oxygen, even if it is thin.

[0344] The substrate temperature when forming insulating film 125A and insulating film 127a is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0345] As described above, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Therefore, the substrate temperatures during the formation of the insulating films 125A and 127a can be set to 100° C. or higher, 120° C. or higher, or 140° C. or higher, respectively. The higher the deposition temperature, the denser the inorganic insulating film can be and the higher its barrier properties can be. Therefore, by depositing the insulating film 125A at such a temperature, damage to the first layer 113a, the second layer 113b, and the third layer 113c can be further reduced, thereby improving the reliability of the light-emitting device.

[0346] It is preferable to form the insulating film 125A with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less, within the above substrate temperature range.

[0347] The insulating film 125A is preferably formed by the ALD method. The ALD method is preferable because it can reduce film damage during film formation and can form a film with high coverage. For example, the insulating film 125A is preferably formed as an aluminum oxide film by the ALD method.

[0348] Alternatively, the insulating film 125A may be formed by sputtering, CVD, or PECVD, which have a faster film formation rate than ALD, thereby enabling highly reliable display devices to be manufactured with high productivity.

[0349] The insulating film 127a is preferably formed by the wet film formation method described above. The insulating film 127a is preferably formed by, for example, spin coating using a photosensitive resin, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0350] The insulating film 127a is preferably formed using a resin composition containing a polymer, an acid generator, and a solvent. The polymer is formed using one or more types of monomers and has a structure in which one or more types of structural units (also called constituent units) are regularly or irregularly repeated. As the acid generator, one or both of a compound that generates acid when irradiated with light and a compound that generates acid when heated can be used.

[0351] The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion promoter, a surfactant, and an antioxidant. For example, the resin composition described in Patent Document 2 (JP 2020-101659 A) can be suitably used as such a resin composition. For example, the resin composition may contain a quinone diazide compound as an acid generator.

[0352] After the insulating film 127a is formed, heat treatment (also referred to as pre-baking) is preferably performed. The heat treatment is performed at a temperature lower than the upper temperature limits of the first layer 113a, the second layer 113b, and the third layer 113c. The substrate temperature during the heat treatment is preferably 50° C. to 200° C., more preferably 60° C. to 150° C., and further preferably 70° C. to 120° C. This allows the solvent contained in the insulating film 127a to be removed.

[0353] 15C, exposure is performed to expose a portion of insulating film 127a to visible light or ultraviolet light. When a positive photosensitive resin composition containing an acrylic resin is used for insulating film 127a, visible light or ultraviolet light is irradiated using mask 132 onto an area where insulating layer 127 will not be formed in a later step.

[0354] The insulating layer 127 is formed in a region sandwiched between any two of the pixel electrodes 111a, 111b, and 111c, and around the conductive layer 123. Therefore, as shown in Fig. 13C, visible light or ultraviolet light is irradiated onto the pixel electrodes 111a, 111b, and 111c, and onto the conductive layer 123, using a mask 132.

[0355] The width of the insulating layer 127 to be formed later can be controlled by the region to be exposed to light. In this embodiment, the insulating layer 127 is processed so as to have a portion that overlaps with the upper surface of the pixel electrode (FIGS. 3A and 3B). As shown in FIG. 7A or 7B, the insulating layer 127 does not necessarily have a portion that overlaps with the upper surface of the pixel electrode.

[0356] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0357] Here, by providing a barrier insulating layer against oxygen (e.g., an aluminum oxide film, etc.) as one or both of the mask layer 118 (mask layers 118a, 118b, 118c) and the insulating film 125A, it is possible to reduce the diffusion of oxygen into the first layer 113a, the second layer 113b, and the third layer 113c.

[0358] When the EL layer is irradiated with light (visible light or ultraviolet light), the organic compounds contained in the EL layer become excited, which may promote a reaction with oxygen contained in the atmosphere. More specifically, when the EL layer is irradiated with light (visible light or ultraviolet light) in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the EL layer. By providing the mask layer 118 and the insulating film 125A on the island-shaped EL layer, it is possible to reduce the bonding of oxygen in the atmosphere to the organic compounds contained in the EL layer.

[0359] 15C shows an example in which a positive photosensitive resin is used for insulating film 127a and visible light or ultraviolet light is irradiated onto the region where insulating layer 127 is not formed, but the present invention is not limited to this. For example, a negative photosensitive resin may be used for insulating film 127a. In this case, visible light or ultraviolet light is irradiated onto the region where insulating layer 127 is formed.

[0360] 16A and 20A, a development step is performed to remove the exposed areas of the insulating film 127a, forming an insulating layer 127b. Note that FIG. 20A is an enlarged view of the second layer 113b and the end of the insulating layer 127b and its vicinity shown in FIG. 16A. The insulating layer 127b is formed in a region sandwiched between any two of the pixel electrodes 111a, 111b, and 111c, and in a region surrounding the conductive layer 123. Here, when an acrylic resin is used for the insulating film 127a, it is preferable to use an alkaline solution as the developer, such as a tetramethylammonium hydroxide aqueous solution (TMAH).

[0361] Subsequently, residues (so-called scum) remaining after the development process may be removed, for example, by ashing using oxygen plasma.

[0362] Etching may be performed to adjust the height of the surface of the insulating layer 127b. The insulating layer 127b may be processed by ashing using oxygen plasma, for example. Even when a non-photosensitive material is used as the insulating film 127a, the height of the surface of the insulating film 127a can be adjusted by ashing or the like.

[0363] Next, as shown in FIGS. 16B and 20B, an etching process is performed using insulating layer 127b as a mask to remove a portion of insulating film 125A and thin a portion of mask layers 118a, 118b, and 118c. This results in insulating layer 125 being formed under insulating layer 127b. Furthermore, the surfaces of the thin portions of mask layers 118a, 118b, and 118c are exposed. Note that FIG. 20B is an enlarged view of second layer 113b and the end and vicinity of insulating layer 127b shown in FIG. 16B. Note that hereinafter, the etching process using insulating layer 127b as a mask may be referred to as the first etching process.

[0364] The first etching process can be performed by dry etching or wet etching. Note that, if the insulating film 125A is formed using the same material as the mask layers 118a, 118b, and 118c, the first etching process can be performed all at once, which is preferable.

[0365] As shown in FIG. 20B, by performing etching using insulating layer 127b, which has tapered side surfaces, as a mask, the side surfaces of insulating layer 125 and the upper end portions of the side surfaces of mask layers 118a, 118b, and 118c can be tapered relatively easily.

[0366] When dry etching is performed, it is preferable to use a chlorine-based gas. Examples of chlorine-based gases that can be used include Cl2, BCl3, SiCl4, and CCl4, either singly or in combination. Furthermore, gases selected from oxygen gas, hydrogen gas, helium gas, and argon gas, either singly or in combination, can be added to the chlorine-based gas as appropriate. By using dry etching, thin regions of the mask layers 118a, 118b, and 118c can be formed with good in-plane uniformity.

[0367] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source. For example, an inductively coupled plasma (ICP) etching apparatus may be used as the dry etching apparatus having a high-density plasma source. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes may be used.

[0368] A capacitively coupled plasma etching apparatus having parallel-plate electrodes may be configured to apply a high-frequency voltage to one of the parallel-plate electrodes, or to apply a plurality of different high-frequency voltages to one of the parallel-plate electrodes, or to apply a high-frequency voltage of the same frequency to each of the parallel-plate electrodes, or to apply high-frequency voltages of different frequencies to each of the parallel-plate electrodes.

[0369] Furthermore, when dry etching is performed, by-products generated by the dry etching may be deposited on the upper and side surfaces of insulating layer 127b, etc. Therefore, components contained in the etching gas, components contained in insulating film 125A, and components contained in mask layers 118a, 118b, and 118c may be contained in insulating layer 127 after the display device is completed.

[0370] Furthermore, the first etching process is preferably performed by wet etching. Using wet etching can reduce damage to the first layer 113a, the second layer 113b, and the third layer 113c compared to using dry etching. Wet etching can be performed using an alkaline solution. For example, an alkaline solution, such as tetramethylammonium hydroxide (TMAH), is preferably used for wet etching of an aluminum oxide film. In this case, the wet etching can be performed by a paddle method. Note that if the insulating film 125A is formed using the same material as the mask layers 118a, 118b, and 118c, the above etching process can be performed simultaneously, which is preferable.

[0371] 16B and 20B, the first etching process does not completely remove mask layers 118a, 118b, and 118c, and the etching process is stopped when the film thickness has become thin. In this way, by leaving mask layers 118a, 118b, and 118c on first layer 113a, second layer 113b, and third layer 113c, respectively, it is possible to prevent damage to first layer 113a, second layer 113b, and third layer 113c in subsequent processing steps.

[0372] 16B and 20B, the mask layers 118a, 118b, and 118c are configured to have small thicknesses, but the present invention is not limited to this. Depending on the thickness of the insulating film 125A and the thickness of the mask layers 118a, 118b, and 118c, the first etching process may be stopped before the insulating film 125A is processed into the insulating layer 125.

[0373] Furthermore, if the insulating film 125A is formed using the same material as the mask layers 118a, 118b, and 118c, the boundaries between the insulating film 125A and the mask layers 118a, 118b, and 118c may become unclear.

[0374] 16B and 20B show an example in which the shape of insulating layer 127b is unchanged from that of FIGS. 16A and 20A, but the present invention is not limited to this. For example, the end of insulating layer 127b may droop and cover the end of insulating layer 125. Furthermore, the end of insulating layer 127b may contact the upper surfaces of mask layers 118a, 118b, and 118c.

[0375] Next, it is preferable to perform exposure from above, irradiating the insulating layer 127b with visible light or ultraviolet light (FIG. 16C). The energy density of the exposure is 0 mJ / cm. 2 Larger, 800mJ / cm 2 It is preferable that the dose is 0 mJ / cm or less, and 2 Larger, 500mJ / cm 2 It is more preferable to set the temperature as follows: By performing such exposure after development, it may be possible to lower the post-bake temperature for reflowing the insulating layer 127b in a later step.

[0376] Here, by providing a barrier insulating layer against oxygen (e.g., an aluminum oxide film, etc.) as mask layer 118a, mask layer 118b, and mask layer 118c, it is possible to reduce the diffusion of oxygen into first layer 113a, second layer 113b, and third layer 113c.

[0377] When the EL layer is irradiated with light (visible light or ultraviolet light), the organic compounds contained in the EL layer become excited, which may promote a reaction with oxygen contained in the atmosphere. More specifically, when the EL layer is irradiated with light (visible light or ultraviolet light) in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the EL layer. By providing mask layers 118a, 118b, and 118c on the island-shaped EL layer, it is possible to reduce the bonding of oxygen in the atmosphere to the organic compounds contained in the EL layer.

[0378] On the other hand, as will be described later, not exposing the insulating layer 127b to light may make it easier to change the shape of the insulating layer 127b (reflow) or to deform the insulating layer 127 into a tapered shape in a later step. Therefore, it may be preferable not to expose the insulating layer 127b or 127 to light after development.

[0379] For example, if a photocurable resin is used as the material for the insulating layer 127b, the insulating layer 127b can be polymerized by exposing it to light, thereby hardening the insulating layer 127b. At this stage, the insulating layer 127b may not be exposed to light, and at least one of a post-bake process and a second etching process (described later) may be performed while the insulating layer 127b remains in a relatively easily deformable state. This prevents the formation of irregularities on the surfaces on which the common layer 114 and the common electrode 115 are formed, and also prevents the common layer 114 and the common electrode 115 from being broken.

[0380] Note that the insulating layer 127b (or the insulating layer 127) may be exposed to light after the post-baking or second etching process described below. Also, exposure may be performed after development and before the first etching process. However, depending on the material of the insulating layer 127b (e.g., a positive-type material) and the conditions of the first etching process, exposure may cause the insulating layer 127b to dissolve in the chemical solution during the first etching process. Therefore, it is preferable to perform exposure after the first etching process and before the post-baking. This allows the insulating layer 127 to be produced in a desired shape with high reproducibility and stability.

[0381] Here, the irradiation of visible light or ultraviolet light shown in FIG. 16C is preferably performed in an oxygen-free atmosphere or an atmosphere with a low oxygen content. For example, the irradiation of visible light or ultraviolet light is preferably performed in an inert gas atmosphere such as a nitrogen atmosphere or a reduced-pressure atmosphere. If the irradiation of visible light or ultraviolet light is performed in an oxygen-rich atmosphere, the compounds contained in the EL layer may be oxidized and deteriorated. However, by performing the irradiation of visible light or ultraviolet light in an oxygen-free atmosphere or an oxygen-low atmosphere, deterioration of the EL layer can be prevented, thereby providing a more reliable display device.

[0382] Next, as shown in FIGS. 17A and 20C, heat treatment (also referred to as post-baking) is performed. The heat treatment reflows the insulating layer 127b, and the insulating layer 127 can be formed with tapered side surfaces. As described above, the shape of the insulating layer 127b may already change and have tapered side surfaces when the first etching treatment is completed. The heat treatment is performed at a temperature lower than the heat resistance temperature of the EL layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 130° C.

[0383] The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may also be an atmospheric pressure atmosphere or a reduced pressure atmosphere. A reduced pressure atmosphere is preferred because it allows drying at a lower temperature. The heat treatment in this step is preferably performed at a substrate temperature higher than the heat treatment (pre-bake) performed after the formation of the insulating film 127a. This improves the adhesion between the insulating layer 127 and the insulating layer 125, and also improves the corrosion resistance of the insulating layer 127. Note that FIG. 20C is an enlarged view of the second layer 113b and the end of the insulating layer 127 and its vicinity shown in FIG. 17A.

[0384] As described above, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Therefore, the pre-baking temperature and the post-baking temperature can be set to 100° C. or higher, 120° C. or higher, or 140° C. or higher, respectively. This can further improve the adhesion between the insulating layer 127 and the insulating layer 125 and the corrosion resistance of the insulating layer 127. Furthermore, the range of materials that can be used for the insulating layer 127 can be expanded. Furthermore, by sufficiently removing the solvent and the like contained in the insulating layer 127, impurities such as water and oxygen can be prevented from entering the EL layer.

[0385] By not completely removing the mask layers 118a, 118b, and 118c in the first etching process and leaving the mask layers 118a, 118b, and 118c in a thinner state, the first layer 113a, the second layer 113b, and the third layer 113c can be prevented from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0386] Depending on the material of insulating layer 127 and the temperature, time, and atmosphere of post-baking, a concave curved shape may be formed on the side surface of insulating layer 127, as shown in Figures 5A and 5B. For example, the higher the temperature or the longer the post-baking time, the more likely the shape of insulating layer 127 is to change, and a concave curved shape may be formed. Also, as described above, if insulating layer 127b is not exposed to light after development, the shape of insulating layer 127 may be more likely to change during post-baking.

[0387] Next, as shown in FIGS. 17B and 20D, an etching process is performed using the insulating layer 127 as a mask to remove portions of the mask layers 118a, 118b, and 118c. Note that a portion of the insulating layer 125 may also be removed. This forms openings in the mask layers 118a, 118b, and 118c, respectively, exposing the top surfaces of the first layer 113a, the second layer 113b, the third layer 113c, and the conductive layer 123. Note that FIG. 20D is an enlarged view of the second layer 113b and the end of the insulating layer 127 and their vicinity, as shown in FIG. 17B. Note that hereinafter, the etching process using the insulating layer 127 as a mask may be referred to as the second etching process.

[0388] The end of insulating layer 125 is covered with insulating layer 127. Also, Figures 17B and 20D show an example in which part of the end of mask layer 118b (specifically, the tapered portion formed by the first etching process) is covered with insulating layer 127, and the tapered portion formed by the second etching process is exposed. In other words, this corresponds to the structure shown in Figures 3A and 3B.

[0389] If the first etching process is not performed and the insulating layer 125 and the mask layer are etched together after post-baking, side etching may cause the insulating layer 125 and the mask layer below the edge of the insulating layer 127 to disappear, forming a cavity. The cavity causes unevenness on the surface on which the common layer 114 and the common electrode 115 are formed, which may cause discontinuities in the common layer 114 and the common electrode 115.

[0390] However, even if the insulating layer 125 and the mask layer are side-etched in the first etching process, creating a cavity, the insulating layer 127 can be reflowed by post-baking, filling the cavity. The second etching process then etches the thinner mask layer, reducing the amount of side etching and making it less likely for a cavity to form. Even if a cavity does form, it can be made extremely small. This allows for a flatter surface on which the common layer 114 and the common electrode 115 are formed.

[0391] 5A, 5B, 7A, and 7B, the insulating layer 127 may cover the entire edge of the mask layer 118b. For example, the edge of the insulating layer 127 may droop and cover the edge of the mask layer 118b. Alternatively, the edge of the insulating layer 127 may contact the top surface of at least one of the first layer 113a, the second layer 113b, and the third layer 113c. As described above, if the developed insulating layer 127b is not exposed to light, the shape of the insulating layer 127 may be easily deformed.

[0392] The second etching process is preferably performed by wet etching. Wet etching can reduce damage to the first layer 113a, the second layer 113b, and the third layer 113c compared to dry etching. Wet etching can be performed using an alkaline solution or the like.

[0393] As described above, by providing the insulating layer 127, the insulating layer 125, the mask layer 118a, the mask layer 118b, and the mask layer 118c, it is possible to prevent poor connection between the light-emitting devices due to disconnection of the common layer 114 and the common electrode 115 and an increase in electrical resistance due to a locally thin portion of the film thickness. This allows the display device of one embodiment of the present invention to have improved display quality.

[0394] Furthermore, after exposing portions of the first layer 113a, the second layer 113b, and the third layer 113c, a heat treatment may be further performed. This heat treatment can remove water contained in the EL layer and water adsorbed to the surface of the EL layer. This heat treatment may also change the shape of the insulating layer 127. Specifically, the insulating layer 127 may extend to cover at least one of the ends of the insulating layer 125, the ends of the mask layers 118a, 118b, and 118c, and the top surfaces of the first layer 113a, the second layer 113b, and the third layer 113c. For example, the insulating layer 127 may have the shape shown in FIGS. 5A and 5B.

[0395] The heat treatment is preferably carried out in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be carried out at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced pressure atmosphere is preferred because it allows dehydration at lower temperatures. However, it is preferable to appropriately set the temperature range for the heat treatment, taking into account the heat resistance temperature of the EL layer. Note that, when taking into account the heat resistance temperature of the EL layer, a temperature of 70°C or higher and 120°C or lower is particularly suitable within the above temperature range.

[0396] Subsequently, the common layer 114 and the common electrode 115 are formed in this order on the insulating layer 127, the first layer 113a, the second layer 113b, and the third layer 113c (FIG. 17C).

[0397] The common layer 114 can be formed by a method such as a vapor deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0398] For example, sputtering or vacuum deposition can be used to form the common electrode 115. Alternatively, a film formed by deposition and a film formed by sputtering may be laminated together.

[0399] Next, an insulating film 133a is formed on the common electrode 115 (FIG. 18A). The insulating film 133a can be formed using the same material and process as the insulating film 127a shown in FIG. 15B. Note that forming the insulating films 133a and 127a from the same material, in other words, using the same material for the insulating films 133a and 127a, can reduce manufacturing costs. Furthermore, using the same material for the insulating films 133a and 127a can make the shrinkage of the material (for example, shrinkage of an organic resin material) caused by heat treatment during the manufacturing process the same. Making the shrinkage or shrinkage rate of the materials used for the insulating films 133a and 127a the same is preferable because it makes it easier to control stress in the entire display device.

[0400] 18B, exposure is performed to expose a portion of insulating film 133a to visible light or ultraviolet light. If a positive photosensitive resin composition is used for insulating film 133a, visible light or ultraviolet light is irradiated using mask 132 onto areas where lenses 133 will not be formed in a later step. Lenses 133 are formed in areas overlapping first layer 113a, second layer 113b, and third layer 113c.

[0401] The width (diameter) of the lenses 133 to be formed later can be controlled by the region to be exposed to light. In this embodiment, the lenses 133 are processed to have an island shape (FIG. 9B). As shown in FIG. 10B, the lenses 133 may be processed so that the ends of the lenses 133 in adjacent pixels are connected. In this case, the width of the region to be exposed to light of the insulating film 133a is narrowed, and the ends of the lenses 133 are connected by reflow in a later process.

[0402] The insulating film 133a can be exposed to light using the same method as that used to expose the insulating film 127a shown in FIG. 15C.

[0403] 18C, development is performed to remove the exposed areas of insulating film 133a, forming insulating layer 133b. Insulating layer 133b is formed in areas overlapping first layer 113a, second layer 113b, and third layer 113c. When an acrylic resin is used for insulating film 133a, it is preferable to use an alkaline solution as the developer, such as a tetramethylammonium hydroxide aqueous solution (TMAH).

[0404] Subsequently, the residue (scum) remaining after development may be removed, for example, by ashing using oxygen plasma.

[0405] Etching may be performed to adjust the height of the surface of the insulating layer 133b. The insulating layer 133b may be processed by ashing using oxygen plasma, for example. Even when a non-photosensitive material is used as the insulating film 133a, the height of the surface of the insulating film 133a can be adjusted by ashing or the like.

[0406] Next, it is preferable to perform exposure from above, irradiating the insulating layer 133b with visible light or ultraviolet light (FIG. 19A). By performing exposure after development, it may be possible to improve the transparency of the insulating layer 127b. By improving the transparency of the insulating layer 127b, it is possible to increase the transmittance of the lenses 133 to be formed later. The insulating layer 133b can be exposed to light in the same manner as the insulating layer 127b shown in FIG. 16C.

[0407] 19B, a heat treatment (post-bake) is performed. By performing the heat treatment, the insulating layer 133b can be reflowed and transformed into convex lenses 133 having tapered sides. For the heat treatment, the same process as the heat treatment of the insulating layer 127 shown in FIG. 17A can be used.

[0408] Subsequently, a protective layer 131 is formed on the common electrode 115 and the lenses 133. Furthermore, a substrate 120 is bonded onto the protective layer 131 using a resin layer 122, thereby completing the manufacture of a display device (FIG. 1B).

[0409] The protective layer 131 can be formed by vacuum deposition, sputtering, CVD, ALD, or the like.

[0410] As described above, in the manufacturing method of the display device of this embodiment, the island-shaped first layer 113a, the island-shaped second layer 113b, and the island-shaped third layer 113c are formed by forming a film over the entire surface and then processing it, rather than using a fine metal mask, so that the island-shaped layers can be formed with a uniform thickness. As a result, a high-definition display device or a display device with a high aperture ratio can be realized.

[0411] Furthermore, even if the resolution or aperture ratio is high and the distance between subpixels is extremely short, the first layer 113a, the second layer 113b, and the third layer 113c in adjacent subpixels can be prevented from contacting each other. This prevents leakage current from occurring between subpixels. This prevents crosstalk caused by unintended light emission, enabling a display device with extremely high contrast.

[0412] Furthermore, by providing the insulating layer 127 having a tapered edge between adjacent island-shaped EL layers, it is possible to suppress the occurrence of a step during the formation of the common electrode 115 and to prevent the formation of a locally thin portion in the common electrode 115. This can suppress the occurrence of a connection failure due to the disconnected portion in the common layer 114 and the common electrode 115 and an increase in electrical resistance due to the locally thin portion. Therefore, the display device of one embodiment of the present invention can achieve both high resolution and high display quality.

[0413] Furthermore, by providing a lens on the common electrode that overlaps the light-emitting region, the light that travels laterally using the common electrode 115 as a waveguide can be suppressed, thereby improving the light extraction efficiency.

[0414] Furthermore, when the display device has a light-receiving device, a lens can also be provided on the light-receiving device. By making the diameter of the lens larger than the effective area of ​​the light-receiving portion, the light-collecting ability can be increased, and the photosensitivity of the light-receiving device can be improved.

[0415] This embodiment mode can be combined with other embodiment modes as appropriate.

[0416] (Embodiment 3) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0417] [Pixel layout] In this embodiment, pixel layouts different from that shown in FIG. 1A will be mainly described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0418] The top surface shape of the sub-pixels shown in the drawings in this embodiment corresponds to the top surface shape of the light-emitting region (or light-receiving region).

[0419] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0420] Furthermore, the layout of the circuits constituting the sub-pixels is not limited to the range of the sub-pixels shown in the drawings, and may be arranged outside of the range.

[0421] A stripe arrangement is applied to the pixel 110 shown in Fig. 21A. The pixel 110 shown in Fig. 21A is composed of three subpixels: subpixels 110a, 110b, and 110c.

[0422] An S-stripe arrangement is applied to the pixel 110 shown in Fig. 21B. The pixel 110 shown in Fig. 21B is composed of three subpixels: subpixels 110a, 110b, and 110c.

[0423] 21C includes subpixel 110a having a substantially triangular or trapezoidal top surface shape with rounded corners, subpixel 110b having a substantially triangular or trapezoidal top surface shape with rounded corners, and subpixel 110c having a substantially rectangular or hexagonal top surface shape with rounded corners. Subpixel 110b has a larger light-emitting area than subpixel 110a. Thus, the shape and size of each subpixel can be determined independently.

[0424] 21D are arranged in a delta configuration. Pixel 124a has two subpixels (subpixels 110a and 110b) in the top row (first row) and one subpixel (subpixel 110c) in the bottom row (second row). Pixel 124b has one subpixel (subpixel 110c) in the top row (first row) and two subpixels (subpixels 110a and 110b) in the bottom row (second row).

[0425] FIG. 21D shows an example in which each subpixel has a circular top view, and FIG. 1A shows an example in which each subpixel has a substantially rectangular top view with rounded corners.

[0426] The Pentile arrangement is applied to the pixels 124a and 124b shown in Figure 21E. Figure 21E shows an example in which a pixel 124a having subpixels 110a and 110b and a pixel 124b having subpixels 110b and 110c are arranged alternately.

[0427] 21F shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels aligned in the column direction (for example, subpixels 110a and 110b, or subpixels 110b and 110c) are misaligned.

[0428] 21A to 21F, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, and the subpixel 110c be the subpixel B that emits blue light. Note that the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their order of arrangement can be determined appropriately. For example, the subpixel 110b may be the subpixel R that emits red light, and the subpixel 110a may be the subpixel G that emits green light.

[0429] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0430] Furthermore, in a manufacturing method of a display device according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material for the EL layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer.

[0431] In order to obtain a desired top surface shape for the EL layer, a technique for correcting the mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern match. Specifically, OPC technique adds correction patterns to the corners of the figures on the mask pattern.

[0432] As shown in FIGS. 22A to 22I, a pixel can be configured to have four types of sub-pixels.

[0433] The pixels 110 shown in FIGS. 22A to 22C are arranged in a stripe pattern.

[0434] FIG. 22A is an example in which each subpixel has a rectangular top surface shape, FIG. 22B is an example in which each subpixel has a top surface shape that combines two semicircles and a rectangle, and FIG. 22C is an example in which each subpixel has an elliptical top surface shape.

[0435] The pixels 110 shown in FIGS. 22D to 22F are arranged in a matrix.

[0436] Figure 22D is an example in which each subpixel has a square top surface shape, Figure 22E is an example in which each subpixel has an approximately square top surface shape with rounded corners, and Figure 22F is an example in which each subpixel has a circular top surface shape.

[0437] 22G and 22H show an example in which one pixel 110 is configured in two rows and three columns.

[0438] 22G has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and one subpixel (subpixel 110d) in the bottom row (second row). In other words, pixel 110 has subpixel 110a in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110d across these three columns.

[0439] The pixel 110 shown in FIG. 22H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels 110d in the bottom row (second row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (first column), subpixels 110b and 110d in the center column (second column), and subpixels 110c and 110d in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 22H, it is possible to efficiently remove dust and other particles that may occur during the manufacturing process. This makes it possible to provide a display device with high display quality.

[0440] FIG. 22I shows an example in which one pixel 110 is configured in three rows and two columns.

[0441] 22I has subpixel 110a in the top row (first row), subpixel 110b in the middle row (second row), subpixel 110c across the first and second rows, and one subpixel (subpixel 110d) in the bottom row (third row). In other words, pixel 110 has subpixels 110a and 110b in the left column (first column), subpixel 110c in the right column (second column), and subpixel 110d across these two columns.

[0442] The pixel 110 shown in FIGS. 22A to 22I is composed of four subpixels: subpixels 110a, 110b, 110c, and 110d.

[0443] The subpixels 110a, 110b, 110c, and 110d may each have a light-emitting device that emits light of a different color. Examples of the subpixels 110a, 110b, 110c, and 110d include four-color subpixels of R, G, B, and white (W), four-color subpixels of R, G, B, and Y, and subpixels of R, G, B, and infrared (IR).

[0444] 22A to 22I, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, the subpixel 110c be the subpixel B that emits blue light, and the subpixel 110d be any of the subpixels W that emit white light, Y that emit yellow light, and IR that emit near-infrared light. With this configuration, the pixel 110 shown in FIGS. 22G and 22H has a stripe layout of R, G, and B, which can improve display quality. Furthermore, the pixel 110 shown in FIG. 22I has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0445] The pixel 110 may also have sub-pixels that include light-receiving devices.

[0446] In each pixel 110 shown in FIGS. 22A to 22I, any one of the subpixels 110a to 110d may be a subpixel having a light-receiving device.

[0447] 22A to 22I, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, the subpixel 110c be the subpixel B that emits blue light, and the subpixel 110d be the subpixel S that has a light-receiving device. With this configuration, the pixels 110 shown in FIGS. 22G and 22H have a stripe layout of R, G, and B, which can improve display quality. Furthermore, the pixel 110 shown in FIG. 22I has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0448] There are no particular limitations on the wavelength of light detected by the subpixel S having the light receiving device, and the subpixel S can be configured to detect either or both of visible light and infrared light.

[0449] As shown in Figures 22J and 22K, a pixel can be configured to have five types of sub-pixels.

[0450] FIG. 22J shows an example in which one pixel 110 is configured in two rows and three columns.

[0451] 22J has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and two subpixels (subpixels 110d and 110e) in the bottom row (second row). In other words, pixel 110 has subpixels 110a and 110d in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110e from the second column to the third column.

[0452] FIG. 22K shows an example in which one pixel 110 is configured in three rows and two columns.

[0453] 22K has subpixel 110a in the top row (first row), subpixel 110b in the middle row (second row), subpixel 110c across rows 1 and 2, and two subpixels (subpixels 110d and 110e) in the bottom row (third row). In other words, pixel 110 has subpixels 110a, 110b, and 110d in the left column (first column) and subpixels 110c and 110e in the right column (second column).

[0454] In each pixel 110 shown in FIGS. 22J and 22K, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, and the subpixel 110c be the subpixel B that emits blue light. With this configuration, the pixel 110 shown in FIG. 22J has a stripe layout of R, G, and B, which can improve display quality. Also, the pixel 110 shown in FIG. 22K has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0455] 22J and 22K, it is preferable to use a subpixel S having a light-receiving device in at least one of the subpixels 110d and 110e. When a light-receiving device is used in both the subpixels 110d and 110e, the configurations of the light-receiving devices may be different. For example, the wavelength ranges of light detected may differ at least partially. Specifically, one of the subpixels 110d and 110e may have a light-receiving device that mainly detects visible light, and the other may have a light-receiving device that mainly detects infrared light.

[0456] 22J and 22K, it is preferable that one of the subpixels 110d and 110e is a subpixel S having a light-receiving device, and the other is a subpixel having a light-emitting device that can be used as a light source. For example, it is preferable that one of the subpixels 110d and 110e is a subpixel IR that emits infrared light, and the other is a subpixel S having a light-receiving device that detects infrared light.

[0457] In a pixel having sub-pixels R, G, B, IR, and S, an image can be displayed using the sub-pixels R, G, and B, while the sub-pixel IR can be used as a light source to detect reflected infrared light emitted by the sub-pixel IR at the sub-pixel S.

[0458] As described above, the display device of one embodiment of the present invention can employ various layouts for a pixel having a subpixel including a light-emitting device. Furthermore, the display device of one embodiment of the present invention can employ a pixel having both a light-emitting device and a light-receiving device. In this case, various layouts can also be employed.

[0459] This embodiment mode can be combined with other embodiment modes as appropriate.

[0460] (Fourth embodiment) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0461] The display device of the present embodiment can be a high-definition display device, and can therefore be used as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, as well as for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0462] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices with relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproduction devices.

[0463] [Display module] 23A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100F described below.

[0464] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is an area that displays an image in the display module 280, and is an area where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0465] 23B is a perspective view schematically showing the configuration on the substrate 291 side. A circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291. A terminal section 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286 composed of a plurality of wirings.

[0466] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 23B. The various configurations described in the previous embodiments can be applied to the pixel 284a. Fig. 23B shows an example in which the pixel 284a has the same configuration as the pixel 110 shown in Fig. 1A.

[0467] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0468] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display device.

[0469] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, etc.

[0470] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit section 282. An IC may also be mounted on the FPC 290.

[0471] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a are arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0472] Such a display module 280 has extremely high resolution and can therefore be suitably used in VR devices such as HMDs or glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even when the display unit is enlarged with the lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices having relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0473] [Display device 100A] The display device 100A shown in FIG. 24A includes a substrate 301, a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240, and a transistor 310.

[0474] 23A and 23B. The layered structure from substrate 301 to insulating layer 255c corresponds to layer 101 including a transistor in the first embodiment.

[0475] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as either a source or a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311 and functions as an insulating layer.

[0476] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0477] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0478] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0479] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0480] An insulating layer 255a is provided covering the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B are provided on insulating layer 255c. FIG. 24A shows an example in which light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B have the stacked structure shown in FIG. 1B. An insulator is provided in the region between adjacent light-emitting devices. In FIG. 24A and other figures, insulating layer 125 and insulating layer 127 on insulating layer 125 are provided in this region.

[0481] A mask layer 118a is located on the first layer 113a of the light-emitting device 130R, a mask layer 118b is located on the second layer 113b of the light-emitting device 130G, and a mask layer 118c is located on the third layer 113c of the light-emitting device 130B.

[0482] The pixel electrodes 111a, 111b, and 111c are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layer 243, the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug. Figure 24A and other figures show an example in which the pixel electrode has a two-layer structure consisting of a reflective electrode and a transparent electrode on the reflective electrode.

[0483] Furthermore, a lens 133 and a protective layer 131 are provided on light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B. Substrate 120 is bonded to protective layer 131 with a resin layer 122. For details about the components from the light-emitting devices to substrate 120, refer to embodiment 1. Substrate 120 corresponds to substrate 292 in FIG. 23A.

[0484] 24B is an example of a display device having light-emitting devices 130R and 130G and a light-receiving device 150. The light-receiving device 150 has a pixel electrode 111d, a fourth layer 113d, a common layer 114, and a common electrode 115 stacked one on top of the other. For details of the display device having the light-receiving device, refer to Embodiments 1 and 6.

[0485] [Display device 100B] 25 has a configuration in which a transistor 310A and a transistor 310B, each having a channel formed in a semiconductor substrate, are stacked. Note that in the following description of the display device, descriptions of parts that are the same as those of the display device described above may be omitted.

[0486] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0487] Here, it is preferable to provide an insulating layer 345 on the lower surface of substrate 301B. It is also preferable to provide an insulating layer 346 on insulating layer 261 provided on substrate 301A. Insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into substrates 301B and 301A. For insulating layers 345 and 346, an inorganic insulating film that can be used for protective layer 131 or insulating layer 332, which will be described later, can be used.

[0488] A plug 343 penetrating the substrate 301B and an insulating layer 345 is provided in the substrate 301B. Here, it is preferable to provide an insulating layer 344 covering the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be made of an inorganic insulating film that can be used for the protective layer 131.

[0489] Furthermore, a conductive layer 342 is provided on the back surface of substrate 301B (the surface opposite to substrate 120) below insulating layer 345. Conductive layer 342 is preferably provided so as to be embedded in insulating layer 335. Furthermore, the lower surfaces of conductive layer 342 and insulating layer 335 are preferably flattened. Here, conductive layer 342 is electrically connected to plug 343.

[0490] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. Furthermore, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0491] The substrates 301A and 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be bonded well.

[0492] It is preferable to use the same conductive material for conductive layer 341 and conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for conductive layer 341 and conductive layer 342. This allows the use of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0493] [Display device 100C] The display device 100C shown in FIG. 26 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0494] 26, by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Solder may also be used as the bump 347. An adhesive layer 348 may also be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0495] [Display device 100D] The display device 100D shown in FIG. 27 differs from the display device 100A mainly in the configuration of the transistors.

[0496] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0497] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0498] 23A and 23B. The stacked structure from the substrate 331 to the insulating layer 255c corresponds to the layer 101 including the transistor in Embodiment 1. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0499] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0500] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0501] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0502] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like to the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0503] An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264. An insulating layer 323 and a conductive layer 324 are buried inside the opening and are in contact with the side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the top surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0504] The upper surfaces of conductive layer 324, insulating layer 323, and insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0505] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0506] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably has a conductive layer 274a covering the side surfaces of the openings in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and a part of the upper surface of the conductive layer 325, and a conductive layer 274b in contact with the upper surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0507] [Display device 100E] A display device 100E illustrated in FIG. 28 has a stacked structure of a transistor 320A and a transistor 320B, each of which includes an oxide semiconductor as a semiconductor in which a channel is formed.

[0508] The transistor 320A, the transistor 320B, and the surrounding configuration can be adapted from the display device 100D.

[0509] Note that although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0510] [Display device 100F] A display device 100F shown in FIG. 29 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide is formed.

[0511] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and a transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0512] The transistor 320 can be used as a transistor that constitutes a pixel circuit. The transistor 310 can be used as a transistor that constitutes a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that constitute various circuits such as an arithmetic circuit or a memory circuit.

[0513] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0514] [Display device 100G] FIG. 30 shows a perspective view of display device 100G, and FIG. 31A shows a cross-sectional view of display device 100G.

[0515] Display device 100G has a configuration in which substrate 152 and substrate 151 are bonded together. In Fig. 30, substrate 152 is clearly indicated by a dashed line.

[0516] The display device 100G has a display unit 162, a connection unit 140, a circuit 164, wiring 165, etc. Fig. 30 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Fig. 30 can also be said to be a display module having the display device 100G, an IC (integrated circuit), and an FPC.

[0517] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one side or multiple sides of the display portion 162. There may be one or more connection portions 140. FIG. 30 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0518] The circuit 164 can be, for example, a scanning line driver circuit.

[0519] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0520] 30 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 173 may be, for example, an IC having a scanning line driving circuit or a signal line driving circuit. The display device 100G and the display module may be configured without an IC. The IC may also be mounted on an FPC by a COF method or the like.

[0521] Figure 31A shows an example of a cross section of the display device 100G, showing a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection unit 140, and a portion of the area including the end portion.

[0522] The display device 100G shown in Figure 31A has, between substrate 151 and substrate 152, transistor 201, transistor 205, light-emitting device 130R that emits red light, light-emitting device 130G that emits green light, and light-emitting device 130B that emits blue light, etc.

[0523] The light-emitting devices 130R, 130G, and 130B each have the same layered structure as shown in Fig. 1B, except that the configuration of the pixel electrodes is different. For details of the light-emitting devices, see Embodiment 1.

[0524] Light-emitting device 130R has conductive layer 112a, conductive layer 126a on conductive layer 112a, and conductive layer 129a on conductive layer 126a. All or some of conductive layers 112a, 126a, and 129a may be referred to as pixel electrodes.

[0525] Light-emitting device 130G includes conductive layer 112b, conductive layer 126b on conductive layer 112b, and conductive layer 129b on conductive layer 126b.

[0526] Light-emitting device 130B has conductive layer 112c, conductive layer 126c on conductive layer 112c, and conductive layer 129c on conductive layer 126c.

[0527] The conductive layer 112a is connected to a conductive layer 222b included in the transistor 205 through an opening in the insulating layer 214. An end of the conductive layer 126a is located outside an end of the conductive layer 112a. An end of the conductive layer 126a and an end of the conductive layer 129a are aligned or approximately aligned. For example, a conductive layer functioning as a reflective electrode can be used for the conductive layer 112a and the conductive layer 126a, and a conductive layer functioning as a transparent electrode can be used for the conductive layer 129a.

[0528] Conductive layers 112b, 126b, and 129b in light-emitting device 130G and conductive layers 112c, 126c, and 129c in light-emitting device 130B are similar to conductive layers 112a, 126a, and 129a in light-emitting device 130R, and therefore will not be described in detail.

[0529] Recesses are formed in the conductive layers 112a, 112b, and 112c so as to cover the openings provided in the insulating layer 214. A layer 128 is embedded in the recesses.

[0530] Layer 128 has the function of planarizing the recesses of conductive layers 112a, 112b, and 112c. Conductive layers 126a, 126b, and 126c, which are electrically connected to conductive layers 112a, 112b, and 112c, are provided on conductive layers 112a, 112b, and 112c and layer 128. Therefore, the regions overlapping with the recesses of conductive layers 112a, 112b, and 112c can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0531] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for the layer 128 as appropriate. In particular, the layer 128 is preferably formed using an insulating material, and is particularly preferably formed using an organic insulating material. For example, the organic insulating materials that can be used for the insulating layer 127 described above can be used for the layer 128.

[0532] The top and side surfaces of the conductive layers 126a and 129a are covered by the first layer 113a. Similarly, the top and side surfaces of the conductive layers 126b and 129b are covered by the second layer 113b, and the top and side surfaces of the conductive layers 126c and 129c are covered by the third layer 113c. Therefore, the entire areas where the conductive layers 126a, 126b, and 126c are provided can be used as the light-emitting areas of the light-emitting devices 130R, 130G, and 130B, thereby increasing the aperture ratio of the pixel.

[0533] A portion of the top surface and side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c are covered with insulating layers 125 and 127. A mask layer 118a is located between the first layer 113a and the insulating layer 125. A mask layer 118b is located between the second layer 113b and the insulating layer 125, and a mask layer 118c is located between the third layer 113c and the insulating layer 125. A common layer 114 is provided on the first layer 113a, the second layer 113b, the third layer 113c, and the insulating layers 125 and 127, and a common electrode 115 is provided on the common layer 114. The common layer 114 and the common electrode 115 are each a continuous film provided in common to a plurality of light-emitting devices.

[0534] Furthermore, a lens 133 and a protective layer 131 are provided on the light-emitting devices 130R, 130G, and 130B. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. The substrate 152 is provided with a light-shielding layer 117. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting devices. In FIG. 31A, the space between the substrates 152 and 151 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting devices. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0535] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 has a laminated structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129c. The end of the conductive layer 123 is covered with a mask layer 118a, an insulating layer 125, and an insulating layer 127. A common layer 114 is provided on the conductive layer 123, and a common electrode 115 is provided on the common layer 114. The conductive layer 123 and the common electrode 115 are electrically connected via the common layer 114. The common layer 114 does not necessarily have to be provided in the connection portion 140. In this case, the conductive layer 123 and the common electrode 115 are in direct contact with each other and are electrically connected.

[0536] The display device 100G is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.

[0537] The stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 1.

[0538] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0539] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order on the substrate 151. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarizing layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0540] It is preferable that at least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0541] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may also be stacked.

[0542] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This prevents recesses from being formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like.

[0543] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0544] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0545] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0546] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0547] The semiconductor layer of the transistor preferably contains a metal oxide (oxide semiconductor). That is, the display device of this embodiment preferably uses a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0548] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS and nanocrystalline (nc)-OS.

[0549] Alternatively, a transistor using silicon in a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0550] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0551] OS transistors have significantly higher field-effect mobility than transistors using amorphous silicon. Furthermore, OS transistors have significantly lower source-drain leakage current in an off state (hereinafter also referred to as off-state current), allowing them to retain charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of OS transistors can reduce the power consumption of display devices.

[0552] Furthermore, to increase the light emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Because OS transistors have a higher source-drain breakdown voltage than Si transistors, a high voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0553] Furthermore, when the transistor operates in the saturation region, OS transistors can reduce the change in source-drain current relative to a change in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as the drive transistors in pixel circuits, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a wider range of gradations in the pixel circuit.

[0554] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a drive transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting brightness of the light-emitting device.

[0555] As described above, by using an OS transistor for the drive transistor included in the pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission brightness," "multiple gradations," and "suppression of variation in light-emitting devices."

[0556] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0557] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0558] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=1:3:2 or a composition thereabout, In:M:Zn=1:3:4 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, or In:M:Zn=4:2:3. or a composition in the vicinity thereof, In:M:Zn=4:2:4.1 or a composition in the vicinity thereof, In:M:Zn=5:1:3 or a composition in the vicinity thereof, In:M:Zn=5:1:6 or a composition in the vicinity thereof, In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5:1:8 or a composition in the vicinity thereof, In:M:Zn=6:1:6 or a composition in the vicinity thereof, In:M:Zn=5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0559] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 to 3 and the atomic ratio of Zn is 2 to 4. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 5 and less than 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 0.1 and less than 2.

[0560] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types of structures.

[0561] All the transistors in the display portion 162 may be OS transistors, all the transistors in the display portion 162 may be Si transistors, or some of the transistors in the display portion 162 may be OS transistors and the rest may be Si transistors.

[0562] For example, by using both an LTPS transistor and an OS transistor in the display portion 162, a display device with low power consumption and high driving capability can be realized. A configuration in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. As a more preferable example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and to use an LTPS transistor as a transistor for controlling current.

[0563] For example, one of the transistors included in the display unit 162 functions as a transistor for controlling the current flowing through the light-emitting device and can also be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0564] On the other hand, another transistor in the display unit 162 functions as a switch for controlling pixel selection / deselection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the gradation of pixels to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), and therefore power consumption can be reduced by stopping the driver when displaying a still image.

[0565] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0566] Note that a display device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with an MML (metal maskless) structure. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current or side leakage current). Furthermore, with this structure, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. Note that a structure in which leakage current that may flow through the transistor and lateral leakage current between light-emitting devices are extremely low can minimize light leakage during black display (so-called floating black).

[0567] In particular, by applying the SBS structure described above to light-emitting devices with an MML structure, the layers provided between light-emitting devices (for example, organic layers shared between light-emitting devices, also called common layers) are separated, which makes it possible to eliminate or greatly reduce side leakage.

[0568] 31B and 31C show other examples of transistor configurations.

[0569] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. An insulating layer 218 may further be provided to cover the transistor.

[0570] 31B illustrates an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0571] 31C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 31C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 31C, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings in the insulating layer 215.

[0572] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a laminated structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129c. The conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0573] It is preferable to provide a light-shielding layer 117 on the surface of substrate 152 facing substrate 151. Light-shielding layer 117 can be provided between adjacent light-emitting devices, on connecting portions 140, on circuits 164, etc. Various optical members can be arranged on the outside of substrate 152.

[0574] The materials that can be used for the substrate 120 can be used for the substrate 151 and the substrate 152, respectively.

[0575] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0576] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0577] [Display device 100J] The display device 100J shown in FIG. 32 differs from the display device 100G mainly in that it includes a light receiving device 150.

[0578] The light-receiving device 150 includes a conductive layer 112d, a conductive layer 126d on the conductive layer 112d, and a conductive layer 129d on the conductive layer 126d.

[0579] The conductive layer 112d is connected to a conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214.

[0580] The top and side surfaces of the conductive layer 126d and the conductive layer 129d are covered with the fourth layer 113d, which includes at least an active layer.

[0581] A portion of the top surface and side surfaces of the fourth layer 113d are covered with insulating layers 125 and 127. A mask layer 118d is located between the fourth layer 113d and the insulating layer 125. A common layer 114 is provided on the fourth layer 113d and the insulating layers 125 and 127, and a common electrode 115 is provided on the common layer 114. The common layer 114 is a continuous film provided in common to the light-receiving device and the light-emitting device. In addition, a lens 133 is provided on the common electrode 115.

[0582] 22A to 22K described in Embodiment 3 can be applied to the display device 100J. For details of the display device having a light receiving device, reference can be made to Embodiments 1 and 6.

[0583] This embodiment mode can be combined with other embodiment modes as appropriate.

[0584] (Embodiment 5) In this embodiment, a light-emitting device that can be used for a display device of one embodiment of the present invention will be described.

[0585] In this specification and the like, a structure that produces different emission colors (for example, blue (B), green (G), and red (R)) for each light-emitting device may be referred to as an SBS (Side By Side) structure.

[0586] The light emitting device can emit infrared light or visible light (such as red, green, blue, cyan, magenta, yellow, or white), and the color purity can be enhanced by providing the light emitting device with a microcavity structure.

[0587] [Light-emitting device] 33A, the light-emitting device has an EL layer 763 between a pair of electrodes (a bottom electrode 761 and a top electrode 762). The EL layer 763 can be composed of multiple layers, such as a layer 780, a light-emitting layer 771, and a layer 790.

[0588] The light-emitting layer 771 contains at least a light-emitting substance (also referred to as a light-emitting material).

[0589] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, the layer 780 includes one or more of a layer containing a substance with high hole-injecting properties (hole-injecting layer), a layer containing a substance with high hole-transporting properties (hole-transporting layer), and a layer containing a substance with high electron-blocking properties (electron-blocking layer). The layer 790 also includes one or more of a layer containing a substance with high electron-injecting properties (electron-injecting layer), a layer containing a substance with high electron-transporting properties (electron-transporting layer), and a layer containing a substance with high hole-blocking properties (hole-blocking layer). When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layers 780 and 790 have the opposite structures.

[0590] A structure having layer 780, light-emitting layer 771, and layer 790 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 33A is referred to as a single structure in this specification.

[0591] Fig. 33B shows a modification of EL layer 763 included in the light-emitting device shown in Fig. 33A. Specifically, the light-emitting device shown in Fig. 33B includes a layer 781 on a lower electrode 761, a layer 782 on the layer 781, a light-emitting layer 771 on the layer 782, a layer 791 on the light-emitting layer 771, a layer 792 on the layer 791, and an upper electrode 762 on the layer 792.

[0592] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, for example, the layer 781 can be a hole injection layer, the layer 782 can be a hole transport layer, the layer 791 can be an electron transport layer, and the layer 792 can be an electron injection layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layer 781 can be an electron injection layer, the layer 782 can be an electron transport layer, the layer 791 can be a hole transport layer, and the layer 792 can be a hole injection layer. Such a layer structure allows carriers to be efficiently injected into the light-emitting layer 771, and the efficiency of carrier recombination in the light-emitting layer 771 can be increased.

[0593] As shown in FIGS. 33C and 33D, a configuration in which a plurality of light-emitting layers (light-emitting layers 771, 772, 773) are provided between layer 780 and layer 790 is also a variation of the single structure.

[0594] 33E and 33F, a configuration in which a plurality of light-emitting units (EL layers 763a and 763b) are connected in series via a charge generation layer 785 is referred to as a tandem structure in this specification. The tandem structure may also be referred to as a stack structure. The tandem structure makes it possible to obtain a light-emitting device capable of emitting light with high brightness.

[0595] 33C and 33D, light-emitting layers 771, 772, and 773 may be made of light-emitting materials that emit light of the same color, or may even contain the same light-emitting material. For example, light-emitting layers 771, 772, and 773 may be made of a light-emitting material that emits blue light. A color conversion layer may be provided as layer 764 shown in FIG. 33D.

[0596] Furthermore, light-emitting layers 771, 772, and 773 may each contain a light-emitting substance that emits light of a different color. For example, a light-emitting substance that emits red light, a light-emitting substance that emits blue light, or a light-emitting substance that emits green light may be used for each layer so that white light can be obtained by combining the respective light-emitting colors of light from light-emitting layers 771, 772, and 773. A color filter (also referred to as a colored layer) may be provided as layer 764 shown in Figure 33D. When white light passes through the color filter, light of a desired color can be obtained.

[0597] A light-emitting device that emits white light preferably contains two or more types of light-emitting materials. To obtain white light emission, it is sufficient to select two light-emitting materials whose respective emissions have a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, a light-emitting device that emits white light as a whole can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0598] 33E and 33F, light-emitting layers 771 and 772 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. Alternatively, light-emitting layers 771 and 772 may be made of light-emitting materials that emit light of different colors. When the light emitted by light-emitting layer 771 and the light emitted by light-emitting layer 772 are complementary colors, white light is obtained. FIG. 33F shows an example in which layer 764 is further provided. Layer 764 may be a color conversion layer or a color filter (colored layer), or both.

[0599] 33C, 33D, 33E, and 33F, the layer 780 and the layer 790 may each independently have a laminated structure made up of two or more layers, as shown in FIG. 33B.

[0600] Next, materials that can be used in light-emitting devices will be described.

[0601] Of the lower electrode 761 and the upper electrode 762, a conductive film that transmits visible light is used for the electrode from which light is extracted. It is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted. If the display device has a light-emitting device that emits infrared light, it is preferable to use a conductive film that transmits visible light and infrared light for the electrode from which light is extracted, and a conductive film that reflects visible light and infrared light for the electrode from which light is not extracted.

[0602] A conductive film that transmits visible light may also be used for the electrode on the side from which light is not extracted. In this case, it is preferable to dispose the electrode between the reflective layer and the EL layer 763. That is, light emitted from the EL layer 763 may be reflected by the reflective layer and extracted from the display device.

[0603] The pair of electrodes of the light-emitting device can be formed from a metal, an alloy, an electrically conductive compound, or a mixture thereof, etc. Specific examples include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, an aluminum alloy (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of usable materials include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing these metals in combination. Other examples include rare earth metals such as lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr), europium (Eu), and ytterbium (Yb), as well as alloys containing these metals in combination. Graphene and other materials can also be used.

[0604] A light-emitting device preferably has a micro-optical resonator (microcavity) structure. Therefore, one of the pair of electrodes of the light-emitting device preferably has a transmissive and reflective electrode for visible light, and the other preferably has a reflective electrode for visible light. By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0605] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0606] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 Ωcm or less is preferable.

[0607] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0608] The light-emitting layer can contain one or more light-emitting materials. As the light-emitting material, a material that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a material that emits near-infrared light can also be used as the light-emitting material.

[0609] The light-emitting material may include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0610] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0611] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0612] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a substance with high hole-transporting properties (hole-transporting material) and a substance with high electron-transporting properties (electron-transporting material) can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material may be used.

[0613] The light-emitting layer preferably contains, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triplet Energy Transfer (ExTET), which is the energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, the energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long life for the light-emitting device.

[0614] The EL layer 763 may further include a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, a substance with high electron-injection properties, an electron-blocking material, or a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), as a layer other than the light-emitting layer.

[0615] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0616] As the hole transporting material, a material having high hole transporting properties that can be used for the hole transport layer, which will be described later, can be used.

[0617] As the acceptor material, for example, an oxide of a metal belonging to Groups 4 to 8 of the periodic table can be used. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is particularly preferable because it is stable in the air, has low hygroscopicity, and is easy to handle. Also, an organic acceptor material containing fluorine can be used. Organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used. Note that as a material with high hole injection properties, a mixed material obtained by mixing an oxide of a metal belonging to Groups 4 to 8 of the periodic table (typically, molybdenum oxide) with an organic material may be used.

[0618] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transporting material. Examples of the hole transporting material include 10 -6 cm 2 A material having a hole mobility of 1 / Vs or more is preferred. Note that other materials can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0619] The electron blocking layer is provided in contact with the light-emitting layer. The electron blocking layer is a layer containing a material that has hole transport properties and can block electrons. The electron blocking layer can be made of a material that has electron blocking properties among the hole transport materials described above.

[0620] The electron blocking layer has hole transport properties and can therefore also be called a hole transport layer. Furthermore, a layer of the hole transport layer that has electron blocking properties can also be called an electron blocking layer.

[0621] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 -6 cm 2 A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0622] The hole-blocking layer is provided in contact with the light-emitting layer. The hole-blocking layer is a layer containing a material that has electron transport properties and can block holes. The hole-blocking layer can be made of a material that has hole-blocking properties and is selected from the above electron-transporting materials.

[0623] The hole blocking layer has electron transport properties and can therefore also be called an electron transport layer. Furthermore, a layer of the electron transport layer that has hole blocking properties can also be called a hole blocking layer.

[0624] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0625] Furthermore, it is preferable that the LUMO level of the material with high electron injection properties has a small difference (specifically, 0.5 eV or less) from the work function value of the material used for the cathode.

[0626] The electron injection layer may contain, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO x The electron injection layer may be formed of an alkali metal, an alkaline earth metal, such as cesium carbonate, or a compound thereof. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used as the first layer and ytterbium is provided as the second layer.

[0627] The electron injection layer may contain an electron transporting material. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring can be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used.

[0628] The lowest unoccupied molecular orbital (LUMO) level of an organic compound having an unshared electron pair is preferably −3.6 eV or more and −2.3 eV or less. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, etc.

[0629] Examples of organic compounds with lone electron pairs include 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz). NBPhen has a higher glass transition temperature (Tg) and better heat resistance than BPhen.

[0630] When fabricating a tandem-structure light-emitting device, a charge-generating layer (also called an intermediate layer) is provided between the two light-emitting units. The intermediate layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between a pair of electrodes.

[0631] For the charge generation layer, a material applicable to an electron injection layer, such as lithium, can be suitably used. For the charge generation layer, a material applicable to a hole injection layer can be suitably used. For the charge generation layer, a layer containing a hole transport material and an acceptor material (electron acceptor material) can be suitably used. For the charge generation layer, a layer containing an electron transport material and a donor material can be suitably used. By forming such a charge generation layer, an increase in driving voltage can be suppressed when light-emitting units are stacked.

[0632] This embodiment mode can be combined with other embodiment modes as appropriate.

[0633] (Sixth embodiment) In this embodiment, a light-receiving device that can be used for a display device of one embodiment of the present invention and a display device having a light-receiving and light-emitting function will be described.

[0634] The light receiving device may be, for example, a pn-type or pin-type photodiode, and it is particularly preferable to use an organic photodiode having a layer containing an organic compound as the light receiving device.

[0635] [Light receiving device] 34A, the light-receiving device has a layer 765 between a pair of electrodes (a lower electrode 761 and an upper electrode 762). The layer 765 has at least one active layer and may further have other layers.

[0636] Fig. 34B shows a modification of layer 765 included in the light-receiving device shown in Fig. 34A. Specifically, the light-receiving device shown in Fig. 34B includes a layer 766 on a lower electrode 761, an active layer 767 on the layer 766, a layer 768 on the active layer 767, and an upper electrode 762 on the layer 768.

[0637] The active layer 767 functions as a photoelectric conversion layer.

[0638] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, the layer 766 includes a hole transport layer and / or an electron blocking layer, and the layer 768 includes an electron transport layer and / or a hole blocking layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layers 766 and 768 have the reversed configuration.

[0639] Here, in a display device according to one embodiment of the present invention, a layer shared by the light-receiving device and the light-emitting device (which may be referred to as a continuous layer shared by the light-receiving device and the light-emitting device) may be present. Such a layer may have different functions in the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by the light-receiving device and the light-emitting device may have the same function in the light-emitting device and in the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0640] Next, materials that can be used for the light-receiving device will be described.

[0641] The light-receiving device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device can be formed by a method such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, or coating.

[0642] The active layer of the light-receiving device includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor in the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (e.g., vacuum deposition), allowing the use of a common manufacturing device.

[0643] The active layer is made of n-type semiconductor material, such as fullerene (e.g., C 60 , C 70Examples of the fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviation: ICBA).

[0644] Furthermore, examples of n-type semiconductor materials include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI), and 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0645] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0646] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0647] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0648] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0649] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0650] In addition, the active layer can be made of a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or a PBDB-T derivative, which functions as a donor. For example, an acceptor material can be dispersed in PBDB-T or a PBDB-T derivative.

[0651] The active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0652] The active layer may also contain a mixture of three or more materials. To broaden the wavelength range, a third material may be mixed in addition to the n-type and p-type semiconductor materials. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0653] The light-receiving device may further include a layer containing a substance with high hole-transporting properties, a substance with high electron-transporting properties, or a bipolar substance (a substance with high electron-transporting properties and high hole-transporting properties) as a layer other than the active layer. Furthermore, without being limited to the above, the light-receiving device may further include a layer containing a substance with high hole-injecting properties, a hole-blocking material, a material with high electron-injecting properties, or an electron-blocking material. For the layer other than the active layer of the light-receiving device, for example, the materials that can be used in the above-mentioned light-emitting device can be used.

[0654] Examples of usable hole-transporting or electron-blocking materials include polymer compounds such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonate (abbreviated as PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI). Examples of usable electron-transporting or hole-blocking materials include inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE). The light-receiving device may have a mixed film of PEIE and ZnO, for example.

[0655] [Display device with light detection function] A display device according to one embodiment of the present invention has a display portion in which light-emitting devices are arranged in a matrix, and can display an image. Furthermore, the display portion has a matrix of light-receiving devices, and the display portion has an imaging function and / or a sensing function in addition to an image display function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, it is possible to capture an image or detect the proximity or contact of an object (such as a finger, a hand, or a pen).

[0656] Furthermore, in the display device of one embodiment of the present invention, the light-emitting device can be used as a light source for a sensor. In the display device of one embodiment of the present invention, when light emitted from the light-emitting device included in the display portion is reflected (or scattered) by an object, the light-receiving device can detect the reflected light (or scattered light), so that imaging or touch detection is possible even in a dark place.

[0657] Therefore, a light receiving unit and a light source are not required to be provided separately from the display device, and the number of components in the electronic device can be reduced. For example, a biometric authentication device or a capacitive touch panel for scrolling or the like is not required to be provided separately in the electronic device. Therefore, by using the display device of one embodiment of the present invention, an electronic device with reduced manufacturing costs can be provided.

[0658] Specifically, a display device according to one embodiment of the present invention has a light-emitting device and a light-receiving device in each pixel. In the display device according to one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using an organic EL device.

[0659] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0660] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0661] For example, an image sensor can be used to capture an image for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, or the like.

[0662] For example, an image sensor can be used to capture images of the area around the eye, the surface of the eye, or the inside of the eye (such as the fundus) of a user of a wearable device. Therefore, the wearable device can have a function to detect one or more of the user's blinking, movement of the pupil, and movement of the eyelid.

[0663] The light receiving device can also be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor).

[0664] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0665] A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not touch the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is between 0.1 mm and 300 mm, preferably between 3 mm and 50 mm, is preferred. This configuration allows the object to operate the display device without directly touching it; in other words, it allows the display device to be operated in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or allows the object to operate the display device without directly touching dirt (e.g., dust, viruses, etc.) adhering to the display device.

[0666] Furthermore, the display device of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 1 Hz to 240 Hz) depending on the content displayed on the display device, thereby reducing power consumption. Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near-touch sensor can be configured to be higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0667] In addition, in the display device of one embodiment of the present invention, a lens can be provided over the light-receiving device. By making the diameter of the lens larger than the effective area of ​​the light-receiving portion, the light-collection ability can be increased, and the photosensitivity of the light-receiving device can be improved.

[0668] The display device 100 shown in FIGS. 34C to 34E has, between a substrate 351 and a substrate 359, a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device.

[0669] The functional layer 355 has a circuit for driving the light-receiving device and a circuit for driving the light-emitting device. The functional layer 355 may be provided with one or more of a switch, a transistor, a capacitor, a resistor, a wiring, a terminal, etc. Note that if the light-emitting device and the light-receiving device are driven by a passive matrix method, the functional layer 355 may not be provided with a switch or a transistor.

[0670] 34C , when a finger 352 touches the display device 100, the light emitted by the light-emitting device in the layer 357 having the light-emitting device is reflected by the finger 352, and the reflected light is detected by the light-receiving device in the layer 353 having the light-receiving device. This makes it possible to detect that the finger 352 has touched the display device 100.

[0671] Furthermore, as shown in Figures 34D and 34E, the display device may have a function to detect or capture an object that is close to (not in contact with) the display device. Figure 34D shows an example of detecting a person's finger, and Figure 34E shows an example of detecting information about the periphery, surface, or interior of a person's eye (such as the number of blinks, eyeball movement, and eyelid movement).

[0672] This embodiment mode can be combined with other embodiment modes as appropriate.

[0673] (Embodiment 7) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0674] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0675] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0676] In particular, the display device of one embodiment of the present invention can have high resolution and can therefore be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices (head-mounted displays), AR glasses-type devices, and MR devices.

[0677] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0678] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared light).

[0679] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0680] 35A to 35D, an example of a wearable device that can be worn on the head will be described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device have the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the user's sense of immersion.

[0681] Electronic device 700A shown in FIG. 35A and electronic device 700B shown in FIG. 35B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0682] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying images with extremely high resolution can be provided. In addition, the display device of one embodiment of the present invention has high light extraction efficiency because light emitted from a light-emitting portion is extracted through a lens, and can display extremely bright images. Therefore, when used as an electronic device capable of AR display, the display device can display images with high visibility even in strong external light.

[0683] Furthermore, if the display device has a light-receiving device, the light-receiving device can capture an image of the user's pupils and perform iris authentication. The light-receiving device can also be used to track the user's gaze. By tracking the user's gaze, it is possible to identify what the user is looking at and where they are, allowing the user to select functions that the electronic device has and execute software.

[0684] Electronic device 700A and electronic device 700B can each project an image displayed on display panel 751 onto display area 756 of optical member 753. Because optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through optical member 753. Therefore, electronic device 700A and electronic device 700B are each electronic devices capable of AR display.

[0685] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image of the front as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0686] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential are supplied may be provided.

[0687] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0688] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation or a slide operation by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0689] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0690] When an optical touch sensor is used, a photoelectric conversion device (photoelectric conversion element) can be used as the light receiving device. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0691] The electronic device 800A shown in Figure 35C and the electronic device 800B shown in Figure 35D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0692] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, an electronic device capable of displaying images with extremely high resolution can be provided, which allows a user to feel a high sense of immersion.

[0693] Display unit 820 is provided inside housi...

Claims

1. a first light emitting device, a second light emitting device, a first lens, and a second lens; the first light-emitting device and the second light-emitting device are disposed adjacent to each other; an organic insulating layer is provided in a region including a region between the first light-emitting device and the second light-emitting device; the first light-emitting device and the first lens have an overlapping area; the second light-emitting device and the second lens have an overlapping area; each of the first light-emitting device and the second light-emitting device has a pair of electrodes and an organic compound provided between the pair of electrodes; one of the pair of electrodes is a common electrode formed on the organic compound and the organic insulating layer, and is a conductive film that is transparent to visible light; the first lens and the second lens are provided in contact with the conductive film, A display device, wherein the refractive index of the first lens and the second lens is greater than the refractive index of the conductive film.

2. a light-emitting device, a light-receiving device, a first lens, and a second lens; the light-emitting device and the light-receiving device are provided adjacent to each other, an organic insulating layer is provided in a region including between the light-emitting device and the light-receiving device; the light-emitting device and the first lens have an overlapping area; the light receiving device and the second lens have an overlapping area; each of the light-emitting device and the light-receiving device has a pair of electrodes and an organic compound provided between the pair of electrodes; one of the pair of electrodes is a common electrode formed on the organic compound and the organic insulating layer, and is a conductive film that is transparent to visible light; the first lens and the second lens are provided in contact with the conductive film, A display device, wherein the refractive index of the first lens and the second lens is greater than the refractive index of the conductive film.

3. A light emitting device comprising a first light emitting device, a second light emitting device, a first lens, and a second lens; the first light-emitting device and the second light-emitting device are disposed adjacent to each other; an organic insulating layer is provided in a region including a region between the first light-emitting device and the second light-emitting device; the first light-emitting device and the first lens have an overlapping area; the second light-emitting device and the second lens have an overlapping area; each of the first light-emitting device and the second light-emitting device has a pair of electrodes and an organic compound provided between the pair of electrodes; one of the pair of electrodes is a common electrode formed on the organic compound and the organic insulating layer, and is a conductive film that is transparent to visible light; the first lens and the second lens are provided in contact with the conductive film, the refractive index of the first lens and the second lens is greater than the refractive index of the conductive film; The organic insulating layer, the first lens, and the second lens are formed of the same material.

4. A light emitting device, a light receiving device, a first lens, and a second lens, the light-emitting device and the light-receiving device are provided adjacent to each other, an organic insulating layer is provided in a region including between the light-emitting device and the light-receiving device; the light-emitting device and the first lens have an overlapping area; the light receiving device and the second lens have an overlapping area; each of the light-emitting device and the light-receiving device has a pair of electrodes and an organic compound provided between the pair of electrodes; one of the pair of electrodes is a common electrode formed on the organic compound and the organic insulating layer, and is a conductive film that is transparent to visible light; the first lens and the second lens are provided in contact with the conductive film, the refractive index of the first lens and the second lens is greater than the refractive index of the conductive film; The organic insulating layer, the first lens, and the second lens are formed of the same material.

5. In any one of claims 1 to 4, The display device is such that the first lens and the second lens are plano-convex lenses, and the surfaces opposite to the convex surfaces are in contact with the conductive film.

6. In any one of claims 1 to 4, The display device has an inorganic insulating layer between the organic compound and the organic insulating layer.

7. In any one of claims 1 to 4, The organic insulating layer has a convex curved upper surface.

8. A display device comprising: the display device according to any one of claims 1 to 4; and an optical member; The display device can project a display onto the optical element; The optical member is capable of transmitting light, By visually viewing the optical member, an image in which an image transmitted through the optical member and the display are superimposed can be visually recognized.

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