Optical device lifting method, method for manufacturing receptor substrate with optical device transferred thereon, and method for manufacturing display

Abstract

To provide a method of transferring to a carrier substrate when the pixel pitch of a display is not an integral multiple of the pitch of an optical devices arranged on a sapphire substrate.SOLUTION: From an arrangement pitch (3, 4) of an optical device (2) formed on a sapphire substrate and an arrangement pitch (5, 7) of the optical device to be transferred onto the carrier substrate (6), the ratio of the moving speed of a donor substrate to a receptor substrate is determined, and lift (laser transfer) is performed in synchronization with the movement of the donor substrate, and then the optical device on the sapphire substrate is transferred to the carrier substrate at the same arrangement pitch as the pixel pitch of the display.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] Regarding the mounting process of micro LEDs. [Background technology]

[0002] In recent years, nitride semiconductor optical devices have come to be used as backlights for liquid crystal displays and signage displays. These applications require large numbers of optical devices to be used at once, so high-speed transfer technology is required. High-speed transfer technology generally involves bulk transfer using a stamp method, which has become possible to transfer between 1,000 and tens of thousands of devices at a time.

[0003] Optical devices are mass-produced on sapphire substrates using semiconductor processes, with millions of LEDs less than 100 μm square, known as micro LEDs, being formed on a 4-inch substrate. Micro LEDs are tiny devices measuring several tens of μm in size, and are used after being separated from the sapphire substrate, which serves as the epitaxial substrate. Generally, a support substrate is attached to the optical devices arranged on the sapphire substrate, and then the devices are separated from the sapphire substrate by laser lift-off.

[0004] The support substrate or a substrate onto which optical devices have been transferred from the support substrate is used as a carrier substrate, and the optical devices are picked up from the carrier substrate using a special stamp at intervals corresponding to the pixel pitch of the display and mounted on the backplane substrate. Therefore, the pitch of the optical devices on the sapphire substrate must be 1 / N times the pixel pitch of the display, where N is a positive integer.

[0005] Patent Document 1 describes laser lift-off of nitride semiconductors from sapphire substrates. Patent Documents 2 and 3 propose high-speed mounting using different types of stamps. Patent Document 4 describes a lifting device that lifts from a donor substrate to a receptor substrate. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Special Publication No. 2007-534164 [Patent Document 2] Japanese Patent Application Publication No. 2020-129638 [Patent Document 3] JP 2018-163900 A [Patent Document 4] Japanese Patent Application Publication No. 2020-004478 Summary of the Invention [Problem to be solved by the invention]

[0007] However, the pixel pitch of displays varies depending on the display size and resolution, such as 4K or 8K, and preparing an optical device pitch on a sapphire substrate that corresponds to the pixel pitch would hinder mass production of optical devices and increase costs, a problem that is also common to panel-type devices that use laser diodes or photodiode elements.

[0008] The present invention provides a method for solving the above-mentioned problem that occurs when the pixel pitch of a display or the like does not satisfy the requirement of being a positive integer multiple of the pitch of an optical device. [Means for solving the problem]

[0009] The first invention of the present invention is a method for lifting an optical device on a sapphire substrate, which is a donor substrate, onto a carrier substrate, which is a receptor substrate, using a laser induced forward lift (LIFT) technique. a step of obtaining a reference position D and an array pitch D of an array of optical devices formed on a sapphire substrate; a step of obtaining a reference position R and an array pitch R of an array of the optical devices to be transferred onto a carrier substrate by lifting; a step of opposing the sapphire substrate to the carrier substrate based on the reference position D and the reference position R, and adjusting the positions of either or both of the sapphire substrate and the carrier substrate so that the distance from the surface of the optical device to the carrier substrate becomes a predetermined value; a step of calculating a scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R; a step of irradiating a laser beam from the back side of the sapphire substrate onto the interface between the sapphire substrate and the optical devices, toward the plurality of optical devices arranged in a row; a step of aligning the relative positions of the sapphire substrate and the carrier substrate in a horizontal plane based on the reference position D and the reference position R, and scanning the sapphire substrate and the carrier substrate at the speed ratio VR; Here, the term "optical device" includes laser diodes and photodiodes, as long as the above processes can be used.

[0010] A second invention is a lifting method according to the first invention, further comprising the steps of: lifting an optical device on a sapphire substrate onto a carrier substrate at the speed ratio VRY, rotating the carrier substrate by 90 degrees in a horizontal plane with respect to the scanning direction as a donor substrate in place of the sapphire substrate, and mounting the carrier substrate at the speed ratio VRX;

[0011] A third invention is a lifting method according to the second invention, wherein the irradiation of the laser light is a reduced projection using a photomask, the photomask having a first opening which is an opening corresponding to approximately one optical device in the Y direction and two or more optical devices at an array pitch DX in the X direction, and a second opening which is an opening corresponding to approximately one optical device in the X direction and two or more optical devices at an array pitch RY in the Y direction, and further including a step of switching the mask so that the first opening is used when lifting at a speed ratio VRY and the second opening is used when lifting at a speed ratio VRX.

[0012] A fourth invention is the lifting method according to the third invention, wherein the openings of the photomask are a group of openings that irradiate each optical device in approximately the shape of the optical device.

[0013] The fifth invention is a lifting device that lifts optical devices on a sapphire substrate, which is a donor substrate, onto a carrier substrate, which is a receptor substrate, and includes a first processing unit that acquires a reference position D and an arrangement pitch D of an arrangement of optical devices formed on the sapphire substrate, a second processing unit that acquires a reference position R and an arrangement pitch R of an arrangement of the optical devices to be transferred onto the carrier substrate by lifting, and a stage that adjusts the positions of either or both of the sapphire substrate and the carrier substrate so that the distance from the surface of the optical device to the carrier substrate becomes a predetermined value, based on the reference position D and the reference position R. a third processing unit that calculates a scan speed ratio VR between the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R; a reduced projection optical system that irradiates the boundary surface between the sapphire substrate and the optical devices with laser light from the back side of the sapphire substrate toward the plurality of optical devices lined up in a row; a stage and stage controller that aligns the relative positions of the sapphire substrate and the carrier substrate in a horizontal plane based on the reference position D and the reference position R and scans the sapphire substrate and the carrier substrate at the speed ratio VR; and a laser device that irradiates laser light in conjunction with the scanning operation.

[0014] A sixth invention is a method for lifting microelements on a sapphire substrate, which is a donor substrate, onto a receptor substrate having an adhesive layer, the method comprising the steps of: acquiring the three-dimensional size of the microelements arranged on the donor substrate, a reference position D of the arrangement, and an arrangement pitch D; acquiring the reference position R and arrangement pitch R of the arrangement of the microelements to be mounted on the receptor substrate by lifting; placing the donor substrate and the receptor substrate opposite each other based on the reference position D and the reference position R, measuring the distance between the substrates, and adjusting the positions of either or both of the donor substrate and the receptor substrate so that the distance from the bottom surface of the microelements to the receptor substrate becomes a predetermined value; and adjusting the relative positions of the donor substrate and the receptor substrate in a horizontal plane, and reducing and projecting a laser beam from the back side of the donor substrate onto the interface between the donor substrate and the microelements, the reduced and projected laser beam being a KrF excimer laser beam and having an irradiation energy density of 0.5 to 2 J / cm. 2 The density of the atmosphere filling the gap between the substrates is 1 to 2 kg / m 3 The adhesive layer has a hardness of 20 to 50 (JIS type A), a thickness of 5 μm or more, and the predetermined value is in the range of 10 to 200 μm. [Effects of the Invention]

[0015] This has the effect of enabling high-speed mounting using the stamping method even when the pixel pitch of the display is not an integral multiple of the pitch of the optical device. [Brief explanation of the drawings]

[0016] [Figure 1] FIG. 1 is a diagram of an array of micro LEDs on a sapphire substrate, which is a donor substrate. [Figure 2] This is an example of a photomask pattern. [Figure 3] This is an example of laser irradiation onto a 4-inch Φ sapphire substrate. [Figure 4] FIG. 10 is a diagram of the micro LED array after lift in the Y direction. [Figure 5] 10A and 10B are diagrams of the micro LED array before and after lift in the X direction. [Figure 6] FIG. 10 is a diagram of a second carrier substrate on which RGB is mounted. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to the following embodiments. In all the drawings, the dimensions and proportions of each component are appropriately changed from the actual dimensions to make each component easier to recognize on the drawings.

[0018] In this embodiment, the optical device is described as a GaN (gallium nitride) semiconductor LED (light-emitting diode). LED manufacturers form a large number of LEDs on a sapphire substrate, and in the case of micro LEDs of 100 μm or less, they supply the sapphire substrate as is or a carrier substrate transferred by laser lift-off to companies that produce displays using LEDs (hereinafter referred to as LED display manufacturers).

[0019] Here, the process from the sapphire substrate will be described. In the case of a 4-inch sapphire substrate, millions of micro LEDs are formed on the substrate. Figure 1 shows the arrangement of micro LEDs (2) formed on a sapphire substrate (1). The LED size is 20 x 40 μm (X x Y), the arrangement pitch in the X direction (3) is 30 μm, and the arrangement pitch in the Y direction (4) is 60 μm.

[0020] This sapphire substrate is an example of a substrate on which an optical device, which is a target of the lifting method according to this embodiment, is formed. The back surface of the sapphire substrate is polished to allow laser light to pass through, and the surface on which the LED is formed is textured to increase brightness.

[0021] The relationship between display type and pixel pitch is shown in Table 1. In the case of a 21-inch display, the pixel pitch is a positive integer multiple of the arrangement pitch of the sapphire substrate, so a carrier substrate suitable for a stamp can be produced simply by performing regular laser lift-off, enabling high-speed mounting using a stamp.

[0022] [Table 1]

[0023] Here, we will explain how to fabricate a carrier substrate for a 100-inch display (4K, 8K).

[0024] As shown in Table 1, the pixel pitch of a 100-inch display is 0.577 mm for 4K (3840 x 2160 pixels) and 0.288 mm for 8K (7680 x 4320 pixels), which are not integer multiples of the 30 μm and 60 μm array pitches mentioned above. 72.1 μm is selected as the target array pitch, which is an integer. The pixel pitch is eight times the target array pitch for 4K and four times the target array pitch for 8K.

[0025] Next, we will explain how to fabricate a carrier substrate with a target array pitch using a lifting device. The lifting device used is the lifting device described in Patent Document 4. The sapphire substrate is adsorbed onto the donor stage of the lifting device as a donor substrate with the surface on which the micro LEDs are formed facing downward, and the carrier substrate with an adhesive layer is adsorbed onto the receptor stage of the lifting device as a receptor substrate so as to face the sapphire substrate.

[0026] If the positioning accuracy of the robot that transports each substrate to the stage is sufficient, the coordinates of two or more pre-entered alignment marks are moved to the position of a high-magnification camera, the alignment marks are recognized by image processing, the amount of deviation from the center of the camera is calculated, and this is fed back to the stage to achieve high-precision alignment.If the precision of the transport system is insufficient, it is necessary to use a low-magnification camera for alignment or to perform coarse adjustments using a positioning sensor.

[0027] After alignment, the gap between the substrates is adjusted using the Z axis of the receptor stage. The predetermined value, which is the gap from the micro LED to the adhesive layer, is set based on the position of each substrate measured by the height sensor, the thickness of the sapphire substrate, the thickness of the micro LED, the thickness of the carrier substrate, the thickness of the adhesive layer, etc. The predetermined value is preferably 10 to 200 μm, and more preferably 50 to 150 μm. If the gap is narrower than 10 μm, there is a risk of contact due to the bending of the substrates, and if it is wider than 200 μm, the accuracy of the seating position of the micro LED when transferred will decrease.

[0028] The density of the gas between the donor substrate and receptor substrate is also important in terms of element damage and seating position accuracy, which is related to the air resistance during flight of the micro LED. Table 2 below shows the densities of representative gases.

[0029] [Table 2]

[0030] With a low density gas such as helium, the flight speed cannot be adequately reduced, resulting in damage to the element such as chipping and cracking. If the gas density is too high, the resistance caused by the gas is large, and even a slight asymmetry can deteriorate the accuracy of the seating position. For the specified flight distance of 10 to 200 μm, the gas density is 1 to 2 kg / m 3 is preferred.

[0031] The stage scan speed ratio between the sapphire substrate and the carrier substrate is the ratio of the array pitch of the sapphire substrate to the target array pitch of the carrier substrate for a 100-inch display. If the stage speed of the sapphire substrate is set to 200 mm / s as the reference, the stage speed of the carrier substrate will be 2.403333333 times this in the X direction, or 480.666667 mm / s, and 1.201666667 times this in the Y direction, or 240.333333 mm / s.

[0032] The photomask is a chrome mask with 100 to 200 nm of chrome evaporated onto a 5-inch square quartz glass substrate, and a pattern with openings corresponding to the arrangement and size of 500 micro LEDs in the X direction of Figure 1 and a pattern with openings corresponding to the arrangement and size of 200 micro LEDs in the Y direction of Figure 4 is created.

[0033] The mask pattern is explained using Figure 2. The black parts in Figure 2 are the light-shielding chrome surface, and the white parts are the openings through which the laser passes. Because the projection optical system is 1 / 5, the mask surface is five times the projection surface field size. Therefore, the opening per LED is 100 μm x 200 μm, the pitch is 150 μm, and the length of the 500 opening group is 74.95 mm. If the adhesive layer of the carrier substrate is not damaged by laser irradiation, rectangular openings such as 75,000 μm x 250 μm are also acceptable.

[0034] Alignment, which aligns the photomask coordinate system with the stage coordinate system, is performed when the mask is replaced. If high-precision processing is required, mask alignment is also performed when switching patterns within the same mask. Mask alignment methods vary depending on the equipment configuration, and there are two methods: one in which alignment marks formed on the mask are observed with a high-magnification camera, and one in which alignment is performed by observing the mask projection image with a profiler installed on the stage.

[0035] If there is a Θ misalignment of the mask relative to the optical axis, i.e., a Θ misalignment of the mask relative to the scan axis of the substrate stage, it is necessary to align it on the mask stage. However, for misalignments in the plane perpendicular to the optical axis, or in the X and Y directions, alignment can be performed on the mask stage, or mask alignment can be performed by having a correction value on the substrate stage side.

[0036] The actual lifting operation will now be described. The donor substrate is the aforementioned 4-inch diameter sapphire substrate. The receptor substrate is a 6-inch diameter quartz substrate, with an adhesive layer of 30 hardness and 20 μm thick on its surface. If the adhesive layer is too hard, the micro LED may be damaged, such as cracking, while if it is too soft, it may bounce and not seat, or become embedded in the adhesive layer. Therefore, the hardness is set to 20-50 (JIS Type A), and a thickness of 5 μm or more is desirable, as this is less affected by the type of receptor substrate and is primarily determined by the characteristics of the adhesive layer material. A hardness of 25-40 is more preferable. The thickness of the adhesive layer is preferably 100 μm or less, and more preferably 10-50 μm.

[0037] First, lift is performed in the Y direction in Figure 1. The photomask is patterned in the X direction in Figure 1 with openings corresponding to the arrangement and size of 500 micro LEDs. The speeds of the constant velocity regions of the donor stage and receptor stage are set to 200 mm / s and 240.333333 mm / s, respectively.

[0038] Using Figure 3, we will explain the irradiation method for a 4-inch diameter board. The entire surface is irradiated by performing scanning irradiation by projecting a mask pattern of approximately 15 mm seven times. The hatched area is the irradiation area, and irradiation is performed only on the mounting position of the micro LED.

[0039] If the irradiation start position (X, Y) of the 4-inch Φ donor substrate is (0, -10.0), then the irradiation start position of the 6-inch Φ receptor substrate is (0, -12.0166667). An acceleration distance is set so that the set constant speed is achieved at this start position, and the entire irradiation area is at a constant speed, with the pulse laser triggered based on the stage coordinates to irradiate only the coordinates where the micro LEDs are mounted.

[0040] Lifting GaN-based micro LEDs from the sapphire substrate requires a high energy density of 0.5 to 2 J / cm due to the epitaxial substrate. 2 is.

[0041] A part of the array resulting from the lift is shown in Figure 4. The micro LEDs are arranged in a vertically elongated ellipse on a 6-inch diameter substrate with an array pitch (5) extending in the Y direction.

[0042] Next, lift in the X direction in Figure 4 is performed. The 6-inch diameter quartz substrate (first carrier substrate (6)) removed from the receptor stage is rotated 90 degrees in the XY plane in Figure 4 and adsorbed as a donor substrate. A blank 6-inch diameter quartz substrate is adsorbed as a second carrier substrate (8) on the receptor substrate.

[0043] The photomask is switched to a pattern having openings corresponding to the arrangement and size of 200 micro LEDs in the Y direction of Figure 4. The alignment of the donor substrate, receptor substrate and photomask is the same as above.

[0044] The speeds of the constant velocity regions of the donor stage and receptor stage are set to 200 mm / s and 480.666667 mm / s. The irradiation method is the same as above. Scan irradiation is performed nine times to irradiate the entire surface. If the irradiation start position (X, Y) of the donor substrate is (0, -10.0), the irradiation start position of the receptor substrate will be (0, -24.0333333). Based on the coordinates of the first lift result in the Y direction, scan irradiation similar to that described above can be performed to obtain the lift result with the array pitch adjusted in the X and Y directions, as shown in Figure 5.

[0045] Up to this point, the arrangement pitch in the Y direction in FIG. 1 is adjusted first, and then the arrangement in the X direction is adjusted. However, the X direction may be adjusted first, and then the Y direction may be adjusted.

[0046] Although the method for fabricating a carrier substrate for a single color micro LED has been described, it is also possible to fabricate a second carrier substrate on which RGB are arranged by successively lifting each of the RGB micro LEDs. If all three RGB colors are GaN-based, a first carrier substrate is fabricated for each of the RGB in the above process, and then the RGB are lifted relative to the second carrier substrate while being shifted. Figure 6 shows an example of a second carrier substrate on which RGB is mounted. If R (red) is GaAs-based, it is necessary to transfer it to a sapphire substrate or quartz glass substrate in advance with the electrode facing up, but a second carrier substrate on which RGB are arranged can be fabricated using a similar procedure. In this case, since the sapphire substrate or quartz glass substrate is not a compound semiconductor epitaxial substrate, the energy density during lifting can be low, at 0.2 to 1.5 J / cm. 2 is.

[0047] Although the embodiments of the present invention have been described in detail above, the present invention can be expressed from different perspectives as follows (1) to (25). (1) A method for lifting an optical device on a sapphire substrate, which is a donor substrate, onto a carrier substrate, which is a receptor substrate, comprising the steps of: obtaining a reference position D and an array pitch D of the optical devices formed on the sapphire substrate; a step of obtaining a reference position R and an arrangement pitch R of the optical devices to be transferred onto a carrier substrate by a lift; a step of adjusting the positions of the sapphire substrate and / or the carrier substrate so that the distance from the surface of the optical device to the carrier substrate is a predetermined value, based on the reference position D and the reference position R; calculating a scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R; a step of irradiating a laser beam onto the interface between the sapphire substrate and the optical devices from the back side of the sapphire substrate toward the plurality of optical devices arranged in a row; a step of adjusting the relative positions of the sapphire substrate and the carrier substrate in a horizontal plane based on the reference positions D and R, and scanning the sapphire substrate and the carrier substrate at the speed ratio VR; a step of irradiating and lifting the substrate with laser light in conjunction with the scanning operation; A lifting method including: (2) The arrangement pitch D is composed of the arrangement pitch DX in the X direction and the arrangement pitch DY in the Y direction. The arrangement pitch R is composed of an arrangement pitch RX in the X direction and an arrangement pitch RY in the Y direction, The speed ratio VR is composed of an X-direction speed ratio VRX calculated from the array pitches DX and RX and a Y-direction speed ratio VRY calculated from the array pitches DY and RY, After lifting at a speed ratio VRY, a carrier substrate is rotated 90 degrees in the horizontal plane with respect to the scanning direction as a donor substrate instead of the sapphire substrate, and then lifted onto a second carrier substrate at a speed ratio VRX; The lifting method according to (1), further comprising: (3) The irradiation of the laser light is a reduced projection using a photomask, and the photomask has a first opening which is an opening corresponding to approximately one optical device in the Y direction and two or more optical devices at an array pitch DX in the X direction, and a second opening which is an opening corresponding to approximately one optical device in the X direction and two or more optical devices at an array pitch RY in the Y direction, and switching the mask to use the first opening when lifting at a speed ratio VRY and the second opening when lifting at a speed ratio VRX; The lifting method according to (2) further comprises: (4) The lifting method according to (3), wherein the openings of the photomask are a group of openings that irradiate the individual optical devices in approximately the shape of the optical devices. (5) A lifting device for lifting an optical device on a sapphire substrate, which is a donor substrate, onto a carrier substrate, which is a receptor substrate, comprising: a first processing unit that acquires a reference position D and an arrangement pitch D of the optical devices formed on the sapphire substrate; a second processing unit that acquires a reference position R and an arrangement pitch R of the optical devices to be transferred onto a carrier substrate by a lift; a stage and stage controller that adjusts the positions of the sapphire substrate and / or the carrier substrate so that the sapphire substrate and the carrier substrate face each other based on a reference position D and a reference position R, and the distance from the surface of the optical device to the carrier substrate becomes a predetermined value; a third processing unit that calculates a scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R; a reduction projection optical system that irradiates a laser beam from the rear surface of the sapphire substrate onto the interface between the sapphire substrate and the optical devices, toward the plurality of optical devices arranged in a row; a stage and stage controller that adjusts the relative positions of the sapphire substrate and the carrier substrate in a horizontal plane based on the reference positions D and R, and scans the sapphire substrate and the carrier substrate at the speed ratio VR; a laser device that irradiates a laser beam in conjunction with the scanning operation; A lifting device having (6) A method for lifting a microelement on a sapphire substrate, which is a donor substrate, onto a receptor substrate having an adhesive layer, comprising the steps of: a step of acquiring the three-dimensional size of the microelements arranged on the donor substrate, the reference position D of the arrangement, and the arrangement pitch D; and a step of acquiring the reference position R and the arrangement pitch R of the arrangement of the microelements to be mounted by lifting onto the receptor substrate; a step of placing the donor substrate and the receptor substrate opposite each other based on the reference positions D and R, measuring the distance between the substrates, and adjusting the positions of either or both of the donor substrate and the receptor substrate so that the distance from the bottom surface of the microelement to the receptor substrate becomes a predetermined value; a step of aligning the relative positions of the donor substrate and the receptor substrate in a horizontal plane, and projecting a reduced laser beam from the back side of the donor substrate onto the interface between the donor substrate and the microelement; Including, The reduced-scale projected laser light is a KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm 2 , The density of the atmosphere filling the gap between the substrates is 1 to 2 kg / m 3 , The adhesive layer has a hardness of 20 to 50 and a thickness of 5 μm or more. The predetermined value is 10 to 200 μm, This is the lift method. (7) A lifting method for lifting an optical device on a donor substrate onto a receptor substrate, comprising: The donor substrate and the receptor substrate are arranged to face each other, and a gap is provided between the surface of the optical device and the receptor substrate; A lifting method for lifting adjacent optical devices arranged at a predetermined interval on a donor substrate onto a carrier substrate while converting the interval from the predetermined interval to a different interval. (8) The lifting method according to (7), wherein the interval to be converted is in the X direction (the minor axis direction of the optical device). (9) The lifting method according to (7), wherein the interval to be converted is in the Y direction (the long axis direction of the optical device). (10) The lifting method according to any one of (7) to (9), wherein the gap is 10 to 200 μm. (11) The lifting method according to any one of (7) to (10), wherein the donor substrate or the receptor substrate is lifted while being scanned. (12) The lifting method according to any one of (7) to (11), wherein the optical device is a laser diode or a photodiode. (13) The lifting method according to any one of (7) to (11), wherein the optical device is an LED or a micro LED. (14) A method for manufacturing a receptor substrate having an optical device transferred thereon, comprising: lifting an optical device on a donor substrate onto the receptor substrate; The donor substrate and the receptor substrate are arranged to face each other, and a gap is provided between the surface of the optical device and the receptor substrate; A method for manufacturing a receptor substrate having transferred optical devices, the method comprising: lifting adjacent optical devices arranged at a predetermined interval on a donor substrate onto a carrier substrate while converting the adjacent optical devices arranged at a predetermined interval to an interval different from the predetermined interval. (15) The method for producing a receptor substrate on which an optical device has been transferred according to (14), wherein the interval to be converted is in the X direction (the minor axis direction of the optical device). (16) The method for producing a receptor substrate on which an optical device has been transferred according to (14), wherein the interval to be converted is in the Y direction (the long axis direction of the optical device). (17) The method for producing a receptor substrate having an optical device transferred thereon according to any one of (14) to (16), wherein the gap is 10 to 200 μm. (18) The method for producing a receptor substrate having an optical device transferred thereon according to any one of (14) to (17), wherein the donor substrate or the receptor substrate is lifted while being scanned. (19) The method for producing a receptor substrate having an optical device transferred thereon according to any one of (14) to (18), wherein the optical device is a laser diode or a photodiode. (20) The method for producing a receptor substrate having an optical device transferred thereon according to any one of (14) to (18), wherein the optical device is an LED or a micro LED. (21) A method for manufacturing a display, comprising mounting an optical device on a receptor substrate obtained by the method for manufacturing a receptor substrate having an optical device transferred thereon according to any one of (14) to (19) above, on another substrate. (22) The method for manufacturing a display according to (21), wherein the mounting is performed by a stamping method. (23) A method for lifting an optical device on a donor substrate onto a receptor substrate, comprising: obtaining an array pitch D of an array of optical devices formed on a donor substrate; a step of placing the donor substrate and the receptor substrate opposite each other and adjusting the positions of either or both of the donor substrate and the receptor substrate so that the distance from the surface of the optical device to the receptor substrate is a predetermined value; a step of calculating a scan speed ratio VR of the donor substrate and the receptor substrate from the array pitch D and the array pitch R of the optical devices to be transferred onto the receptor substrate by a lift; irradiating a laser beam from the rear surface of the donor substrate onto the interface between the donor substrate and the optical devices, toward the plurality of optical devices arranged in a row; scanning the donor substrate and the receptor substrate at the speed ratio VR; a step of irradiating and lifting the substrate with laser light in conjunction with the scanning operation; A lifting method including: (24) A lifting device for lifting an optical device on a donor substrate to a receptor substrate, comprising: a mechanism for obtaining an array pitch D of the optical device array formed on the donor substrate; a mechanism for adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the surface of the optical device to the receptor substrate is a predetermined value, while the donor substrate and the receptor substrate are opposed to each other; a mechanism for calculating a scan speed ratio VR between the donor substrate and the receptor substrate from the array pitch D and the array pitch R of the optical device array to be transferred onto the receptor substrate by the lift; a reduction projection optical system that irradiates a laser beam from the rear surface of the donor substrate onto the interface between the donor substrate and the optical devices, toward the plurality of optical devices arranged in a row; a mechanism for scanning the donor substrate and the receptor substrate at the speed ratio VR; a laser device that irradiates a laser beam in conjunction with the scanning operation; A lifting device having (25) A method for lifting a microelement on a donor substrate to a receptor substrate having an adhesive layer, comprising: a step of placing the donor substrate and the receptor substrate opposite each other and adjusting the positions of either or both of the donor substrate and the receptor substrate so that the distance from the lower surface of the microelement to the receptor substrate is a predetermined value; a step of projecting a reduced laser beam from the back side of the donor substrate onto the interface between the donor substrate and the microelement; Including, The reduced-scale projected laser light is a KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm 2 , The density of the atmosphere filling the gap between the substrates is 1 to 2 kg / m 3 , The adhesive layer has a hardness of 20 to 50 and a thickness of 5 μm or more. The predetermined value is 10 to 200 μm, This is the lift method.

[0048] Furthermore, the present invention can be expressed from yet another viewpoint as follows (U1) to (U15). (U1) A system for lifting an optical device on a sapphire substrate, which is a donor substrate, onto a carrier substrate, which is a receptor substrate, comprising: a mechanism for acquiring a reference position D and an arrangement pitch D of the optical devices formed on the sapphire substrate; a mechanism for acquiring a reference position R and an arrangement pitch R of the optical devices to be transferred onto a carrier substrate by a lift; a mechanism for adjusting the positions of the sapphire substrate and / or the carrier substrate so that the sapphire substrate and the carrier substrate face each other based on a reference position D and a reference position R, and the distance from the surface of the optical device to the carrier substrate becomes a predetermined value; a mechanism for calculating a scan speed ratio VR between the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R; a mechanism for irradiating a laser beam from the rear surface of the sapphire substrate onto the interface between the sapphire substrate and the optical devices, toward the plurality of optical devices arranged in a row; a mechanism for adjusting the relative positions of the sapphire substrate and the carrier substrate in a horizontal plane based on the reference positions D and R, and for scanning the sapphire substrate and the carrier substrate at the speed ratio VR; a mechanism for irradiating and lifting the laser beam in conjunction with the scanning operation; Including lift system. (U2) The arrangement pitch D is composed of an arrangement pitch DX in the X direction and an arrangement pitch DY in the Y direction. The arrangement pitch R is composed of an arrangement pitch RX in the X direction and an arrangement pitch RY in the Y direction, The speed ratio VR is composed of an X-direction speed ratio VRX calculated from the array pitches DX and RX and a Y-direction speed ratio VRY calculated from the array pitches DY and RY, a mechanism for lifting the carrier substrate at a speed ratio VRY, then rotating the carrier substrate by 90 degrees in the horizontal plane with respect to the scanning direction as a donor substrate instead of the sapphire substrate, and lifting the carrier substrate to a second carrier substrate at a speed ratio VRX; The lift system according to (U1), further comprising: (U3) The irradiation of the laser light is a reduced projection using a photomask, and the photomask has a first opening which is an opening corresponding to approximately one optical device in the Y direction and two or more optical devices at an array pitch DX in the X direction, and a second opening which is an opening corresponding to approximately one optical device in the X direction and two or more optical devices at an array pitch RY in the Y direction, and A mechanism for switching the mask so that the first opening is used when lifting at a speed ratio of VRY and the second opening is used when lifting at a speed ratio of VRX; The lift system according to (U2), further comprising: (U4) The lift system according to (U3), wherein the openings of the photomask are a group of openings that irradiate individual optical devices in approximately the shape of the optical devices. (U5) A lifting apparatus for lifting an optical device on a sapphire substrate, which is a donor substrate, onto a carrier substrate, which is a receptor substrate, the donor substrate being placed on the lifting apparatus, a first processing unit that acquires a reference position D and an arrangement pitch D of the optical devices formed on the sapphire substrate; a second processing unit that acquires a reference position R and an arrangement pitch R of the optical devices to be transferred onto a carrier substrate by a lift; a stage and stage controller that adjusts the positions of the sapphire substrate and / or the carrier substrate so that the sapphire substrate and the carrier substrate face each other based on a reference position D and a reference position R, and the distance from the surface of the optical device to the carrier substrate becomes a predetermined value; a third processing unit that calculates a scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R; a reduction projection optical system that irradiates a laser beam from the rear surface of the sapphire substrate onto the interface between the sapphire substrate and the optical devices, toward the plurality of optical devices arranged in a row; a stage and stage controller that adjusts the relative positions of the sapphire substrate and the carrier substrate in a horizontal plane based on the reference positions D and R, and scans the sapphire substrate and the carrier substrate at the speed ratio VR; a laser device that irradiates a laser beam in conjunction with the scanning operation; A lifting device having (U6) A system for lifting a microelement on a sapphire substrate, which is a donor substrate, onto a receptor substrate having an adhesive layer, comprising: a step of acquiring the three-dimensional size of the microelements arranged on the donor substrate, the reference position D of the arrangement, and the arrangement pitch D; and a mechanism for acquiring the reference position R and the arrangement pitch R of the arrangement of the microelements to be mounted by lifting onto the receptor substrate; a mechanism for opposing the donor substrate and the receptor substrate based on reference positions D and R, measuring the distance between the substrates, and adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the bottom surface of the microelement to the receptor substrate becomes a predetermined value; a mechanism for aligning the relative positions of the donor substrate and the receptor substrate in a horizontal plane and projecting a reduced laser beam from the back side of the donor substrate onto the interface between the donor substrate and the microelement; Including, The reduced-scale projected laser light is a KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm 2 , The density of the atmosphere filling the gap between the substrates is 1 to 2 kg / m 3 , The adhesive layer has a hardness of 20 to 50 and a thickness of 5 μm or more. The predetermined value is 10 to 200 μm, The lift system. (U7) A lift system for lifting an optical device on a donor substrate to a receptor substrate, comprising: The donor substrate and the receptor substrate are arranged to face each other, and a gap is provided between the surface of the optical device and the receptor substrate; A lift system includes a mechanism for lifting adjacent optical devices arranged at a predetermined interval on a donor substrate onto a carrier substrate while converting the adjacent optical devices to a different interval from the predetermined interval. (U8) The lift system according to (U7), wherein the converting interval is in the X direction (the minor axis direction of the optical device). (U9) The lift system according to (U7), wherein the converting interval is in the Y direction (the long axis direction of the optical device). (U10) The lift system according to any one of (U7) to (U9), wherein the gap is 10 to 200 μm. (U11) The lift system according to any one of (U7) to (U10), wherein the donor substrate or the receptor substrate is lifted while being scanned. (U12) A lift system according to any one of (U7) to (U11), wherein the optical device is a laser diode or a photodiode. (U13) A lift system according to any one of (U7) to (U11), wherein the optical device is an LED or a micro LED. (U14) A manufacturing system for a receptor substrate having an optical device transferred thereon, which lifts an optical device on a donor substrate onto a receptor substrate, The donor substrate and the receptor substrate are arranged to face each other, and a gap is provided between the surface of the optical device and the receptor substrate; A manufacturing system for a receptor substrate on which optical devices have been transferred, the system having a mechanism for lifting adjacent optical devices on a donor substrate arranged at a predetermined interval onto a carrier substrate while converting the adjacent optical devices arranged at a predetermined interval to an interval different from the predetermined interval. (U15) The system for manufacturing a receptor substrate on which an optical device has been transferred according to (U14), wherein the interval to be converted is in the X direction (the minor axis direction of the optical device). (U16) The system for manufacturing a receptor substrate on which an optical device has been transferred according to (U14), wherein the interval to be converted is in the Y direction (the long axis direction of the optical device). (U17) The system for manufacturing a receptor substrate having an optical device transferred thereon according to any one of (U14) to (U16), wherein the gap is 10 to 200 μm. (U18) The system for manufacturing a receptor substrate having an optical device transferred thereto, according to any one of (U14) to (U17), wherein the donor substrate or the receptor substrate is lifted while being scanned. (U19) The system for manufacturing a receptor substrate having an optical device transferred thereon according to any one of (U14) to (U18), wherein the optical device is a laser diode or a photodiode. (U20) The system for manufacturing a receptor substrate having an optical device transferred thereon according to any one of (U14) to (U18), wherein the optical device is an LED or a micro LED. (U21) A display manufacturing system having a mechanism for mounting an optical device on a receptor substrate obtained by the manufacturing system for a receptor substrate having an optical device transferred thereon according to any one of (U14) to (U19) onto another substrate. (U22) The display manufacturing system according to (U21), wherein the mounting is by stamping. (U23) A system for lifting an optical device on a donor substrate to a receptor substrate, comprising: a mechanism for obtaining an array pitch D of the optical device array formed on the donor substrate; a mechanism for adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the surface of the optical device to the receptor substrate is a predetermined value, while the donor substrate and the receptor substrate are opposed to each other; a mechanism for calculating a scan speed ratio VR between the donor substrate and the receptor substrate from an arrangement pitch D and an arrangement pitch R of the optical devices to be transferred onto the receptor substrate by a lift; a mechanism for irradiating a laser beam from the rear surface of the donor substrate onto the interface between the donor substrate and the optical devices, toward the plurality of optical devices arranged in a row; a mechanism for scanning the donor substrate and the receptor substrate at the speed ratio VR; a mechanism for irradiating and lifting the laser beam in conjunction with the scanning operation; Including lift system. (U24) A lifting apparatus for lifting an optical device on a donor substrate to a receptor substrate, the donor substrate being placed on the lifting apparatus, a mechanism for obtaining an array pitch D of the optical device array formed on the donor substrate; a mechanism for adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the surface of the optical device to the receptor substrate is a predetermined value, while the donor substrate and the receptor substrate are opposed to each other; a mechanism for calculating a scan speed ratio VR between the donor substrate and the receptor substrate from the array pitch D and the array pitch R of the optical device array to be transferred onto the receptor substrate by the lift; a reduction projection optical system that irradiates a laser beam from the rear surface of the donor substrate onto the interface between the donor substrate and the optical devices, toward the plurality of optical devices arranged in a row; a mechanism for scanning the donor substrate and the receptor substrate at the speed ratio VR; a laser device that irradiates a laser beam in conjunction with the scanning operation; A lifting device having (U25) A system for lifting a microelement on a donor substrate to a receptor substrate having an adhesive layer, comprising: a mechanism for adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the lower surface of the microelement to the receptor substrate is a predetermined value while the donor substrate and the receptor substrate are opposed to each other; a mechanism for projecting a reduced-scale laser beam from the rear side of the donor substrate onto the interface between the donor substrate and the microdevice; Including, The reduced-scale projected laser light is a KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm 2 , The density of the atmosphere filling the gap between the substrates is 1 to 2 kg / m 3 , The adhesive layer has a hardness of 20 to 50 and a thickness of 5 μm or more. The predetermined value is 10 to 200 μm, The lift system.

[0049] Furthermore, the various mechanisms may each have a different function, or one mechanism may have multiple functions. [Industrial Applicability]

[0050] It can be used as part of the manufacturing process for micro LED displays, to increase the degree of freedom in the placement of GaN-based laser diodes in the manufacturing processes for VCSELs (vertical cavity surface emitting lasers), display projectors, and laser projectors, and to increase the degree of freedom in the placement of GaN-based photodiodes in the manufacturing process for flat panel sensors. [Explanation of symbols]

[0051] 1. Sapphire substrate 2. Micro LED 3 Array pitch in the X-axis direction 4 Array pitch in the Y-axis direction 5 Array pitch adjusted in the Y-axis direction 6 First carrier board 7 Array pitch adjusted in the X-axis direction 8 Second Carrier Board

Claims

1. 1. A method for lifting an optical device on a sapphire substrate, which is a donor substrate, onto a carrier substrate, which is a receptor substrate having an adhesive layer, comprising: acquiring a reference position D and an array pitch D of the optical devices formed on the sapphire substrate; a step of obtaining a reference position R and an arrangement pitch R of the optical devices to be transferred onto a carrier substrate by a lift; a step of adjusting the positions of the sapphire substrate and / or the carrier substrate so that the distance from the surface of the optical device to the carrier substrate is a predetermined value, based on the reference position D and the reference position R; calculating a scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R; a step of irradiating a laser beam onto the interface between the sapphire substrate and the optical devices from the back surface side of the sapphire substrate toward the plurality of optical devices arranged in a row; a step of adjusting the relative positions of the sapphire substrate and the carrier substrate in a horizontal plane based on the reference positions D and R, and scanning the sapphire substrate and the carrier substrate at the speed ratio VR; a step of irradiating and lifting the substrate with laser light in conjunction with the scanning operation; Including, the laser light is irradiated by a reduced projection using a photomask, the photomask having a group of openings corresponding to each of the optical devices of the plurality of optical devices arranged in a row; The arrangement pitch D is composed of an arrangement pitch DX in the X direction and an arrangement pitch DY in the Y direction. The arrangement pitch R is composed of an arrangement pitch RX in the X direction and an arrangement pitch RY in the Y direction, The speed ratio VR is composed of an X-direction speed ratio VRX calculated from the array pitches DX and RX and a Y-direction speed ratio VRY calculated from the array pitches DY and RY, After lifting at a speed ratio VRY, a carrier substrate is rotated 90 degrees in a horizontal plane with respect to the scanning direction and mounted as a donor substrate instead of the sapphire substrate, and then lifted onto a second carrier substrate at a speed ratio VRX; Further comprising: The photomask has a first opening which is an opening corresponding to approximately one optical device in the Y direction and two or more optical devices at an arrangement pitch DX in the X direction, and a second opening which is an opening corresponding to approximately one optical device in the X direction and two or more optical devices at an arrangement pitch RY in the Y direction, and switching the mask so that the first opening is used when lifting at a speed ratio VRY and the second opening is used when lifting at a speed ratio VRX; The lifting method further comprises:

2. The lifting method according to claim 1 , wherein the openings of the photomask are a group of openings that are irradiated onto individual optical devices in approximately the shape of the optical devices.

3. 3. The lifting method according to claim 1, wherein a KrF excimer laser beam is irradiated from the rear surface side of the donor substrate toward the optical device.

4. 4. The lifting method according to claim 1, wherein the optical device is a light-emitting diode made of a gallium nitride semiconductor formed on a sapphire substrate that is the donor substrate.

5. 0.5 to 2 J / cm from the rear surface side of the donor substrate toward the optical device ２ 5. The lifting method according to claim 4, wherein the laser beam has an irradiation energy density of 1000 .mu.m.sup.

6. 6. The lifting method according to claim 1, wherein when the sapphire substrate and the receptor substrate are opposed to each other, a gap is provided between the surface of the optical device and the receptor substrate, and the gap is 10 to 200 μm.

7. A method for producing a receptor substrate having an optical device transferred thereon, comprising lifting an optical device on a donor substrate onto the receptor substrate by the lifting method according to any one of claims 1 to 6.

8. A method for manufacturing a display, comprising mounting an optical device on a receptor substrate obtained by the method for manufacturing a receptor substrate having an optical device transferred thereon according to claim 7 on another substrate.

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