Light Source Module

Abstract

This light source module (1) has: an airtightly sealed first semiconductor layer element (11); an airtightly sealed second semiconductor layer element (12); and first to fourth optical elements (310, 320, 330, and 340). A first laser beam (L11), prior to reaching the first optical element (310), has a spread angle θfd1 in a direction of a second optical axis (F1) and a spread angle θsd1 in a direction of a third optical axis (S1), and 90°>θfd1>θsd1>0 is satisfied. A spread angle θfd12, in the direction of the second optical axis (F1), of the first laser beam (L12) emitted from the first optical element (310) is reduced from the spread angle θfd1. A component, in the direction of the second optical axis (F1), of the first laser beam (L14) emitted from the second optical element (320) is collimated. The same is also applied to a second semiconductor laser element (12).

Description

[Technical Field]

[0001] The present disclosure relates to a light source module. [Background technology]

[0002] Patent Document 1 discloses a light source module that has semiconductor laser elements and multiplexes laser beams emitted from the semiconductor laser elements.

[0003] FIG. 49 is a perspective view showing the configuration of a conventional light source module 1z.

[0004] The conventional light source module 1z includes a semiconductor laser element 11z mounted above a plurality of submounts 50z, each of which is disposed above a multi-step base 5z having a plurality of staircase-like steps provided in a case 2z.

[0005] A semiconductor laser element 11z, a lens 320z, a lens 350z, and a reflecting mirror 370z are fixed to each of the multiple stages of the multistage base 5z. The laser light emitted from each of the multiple semiconductor laser elements 11z is collimated in the vertical axis direction by the lens 320z and in the horizontal axis direction by the lens 350z.

[0006] The laser beams emitted from the plurality of semiconductor laser elements 11z are multiplexed by reflecting mirrors 370z arranged on each stage of the multistage base 5z, and are then focused on the end face of the optical fiber 4z by a lens 380z.

[0007] In the prior art, in order to narrow the beam width of the laser light in the vertical axis direction and make it a parallel beam, the lens 320z, which is the first collimating optical element, and the laser light emission point 60z of the semiconductor laser element 11z need to be positioned accurately and close to each other.

[0008] However, it is difficult to fix the position of the light emitting point 60z of the semiconductor laser element 11z exactly at a predetermined position with an error of several microns or submicrons or less.

[0009] Therefore, the positions of optical components such as lenses 320z and 350z are adjusted with high precision relative to the light emitting point 60z of the semiconductor laser element 11z, and are fixed with a resin adhesive such as an ultraviolet curing adhesive.

[0010] On the other hand, the conventional light source module 1z has a structure in which a plurality of semiconductor laser elements 11z are hermetically sealed in a case 2z. However, in the conventional light source module 1z, the plurality of semiconductor laser elements 11z are sealed together with optical components such as lenses 320z, 350z, and 380z, and a reflecting mirror 370z. In other words, within the case 2z, the plurality of semiconductor laser elements 11z are exposed to a plurality of optical components of the focusing optical system. [Prior art documents] [Patent documents]

[0011] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-235943 Summary of the Invention [Problem to be solved by the invention]

[0012] In such a case, because the surface areas of the multiple optical components are large, dirt on the surfaces of the multiple optical components is likely to become foreign matter inside the case 2z. Furthermore, if a resin-based adhesive is used to secure the multiple optical components, impurities contained in the resin may precipitate in the atmosphere. The dirt on the surfaces of the multiple optical components and the impurities contained in the resin may adhere to the semiconductor laser element 11z as foreign matter. If foreign matter adheres to the semiconductor laser element 11z, the performance of the semiconductor laser element 11z may deteriorate. Therefore, according to the prior art, it is difficult to realize a compact light source module that suppresses deterioration of the semiconductor laser element and has high coupling efficiency of laser light to the target.

[0013] Therefore, an object of the present disclosure is to provide a compact light source module that suppresses deterioration of a semiconductor laser element and has high coupling efficiency of laser light in an object. [Means for solving the problem]

[0014] In order to achieve the above object, a light source module according to one aspect of the present disclosure includes a first semiconductor laser module having a hermetically sealed first semiconductor laser element and a first optical element onto which a first laser beam emitted from the first semiconductor laser element is incident, a second optical element onto which the first laser beam passing through the first optical element is incident, a second semiconductor laser module having a hermetically sealed second semiconductor laser element and a third optical element onto which the second laser beam emitted from the second semiconductor laser element is incident, and a second semiconductor laser module having a hermetically sealed second semiconductor laser element and a third optical element onto which the second laser beam before passing through the third optical element is incident. a fourth optical element on which the second laser beam is incident, wherein the first laser beam that has passed through the second optical element and the second laser beam that has passed through the fourth optical element are combined, and a first optical axis that is an optical axis from the first semiconductor laser element to the second optical element defines a traveling direction of the first laser beam as a first direction, the first laser beam has a second optical axis perpendicular to the first direction and a third optical axis perpendicular to the first direction and the second optical axis, and the first optical element defines a power in the second optical axis that is equal to a power in the third optical axis the power of the first laser beam before reaching the first optical element has a first divergence angle θfd1 which is a divergence angle in the direction of the second optical axis and a second divergence angle θsd1 which is a divergence angle in the direction of the third optical axis, the first divergence angle θfd1 and the second divergence angle θsd1 satisfy 90°>θfd1>θsd1>0, a third divergence angle θfd12 which is a divergence angle in the direction of the second optical axis of the first laser beam output from the first optical element is reduced from the first divergence angle θfd1, a component of the first laser beam emitted from the second optical element in the direction of the second optical axis is collimated, a traveling direction of the second laser beam is set as a second direction on a fourth optical axis that is an optical axis from the second semiconductor laser element to the fourth optical element, the second laser beam has a fifth optical axis perpendicular to the second direction and a sixth optical axis perpendicular to the second direction and the fifth optical axis, the third optical element has a power on the fifth optical axis greater than a power on the sixth optical axis, and the second laser beam until it reaches the third optical elementThe third optical element has a fourth divergence angle θfd2 which is a divergence angle in the direction of the fifth optical axis, and a fifth divergence angle θsd2 which is a divergence angle in the direction of the sixth optical axis, and the fourth divergence angle θfd2 and the fourth divergence angle θsd2 satisfy 90°>θfd2>θsd2>0, and a sixth divergence angle θfd22 which is a divergence angle in the direction of the fifth optical axis of the second laser beam output from the third optical element is reduced from the third divergence angle θfd2, and the component of the second laser beam output from the fourth optical element in the direction of the fifth optical axis is collimated.

[0015] Furthermore, a light source module according to an aspect of the present disclosure includes a semiconductor laser module having a hermetically sealed first semiconductor laser element, a hermetically sealed second semiconductor laser element, a first optical element onto which a first laser beam emitted from the first semiconductor laser element is incident, and a third optical element onto which a second laser beam emitted from the second semiconductor laser element is incident, a second optical element onto which the first laser beam passing through the first optical element is incident, and a fourth optical element onto which the second laser beam passing through the third optical element is incident, The first laser beam that has passed through the fourth optical element and the second laser beam that has passed through the fourth optical element are combined, and a traveling direction of the first laser beam is set as a first direction on a first optical axis that is an optical axis from the first semiconductor laser element to the second optical element, the first laser beam has a second optical axis perpendicular to the first direction and a third optical axis perpendicular to the first direction and the second optical axis, and the first optical element has a power on the second optical axis that is greater than a power on the third optical axis, and the first laser beam is combined until it reaches the first optical element. The laser beam has a first divergence angle θfd1 which is a divergence angle in the direction of the second optical axis, and a second divergence angle θsd1 which is a divergence angle in the direction of the third optical axis, the first divergence angle θfd1 and the second divergence angle θsd1 satisfy 90°>θfd1>θsd1>0, a third divergence angle θfd12 which is a divergence angle in the direction of the second optical axis of the first laser beam output from the first optical element is reduced from the first divergence angle θfd1, and a component in the direction of the second optical axis of the first laser beam output from the second optical element is The second laser beam is collimated, and a traveling direction of the second laser beam is a second direction on a fourth optical axis that is an optical axis from the second semiconductor laser element to the fourth optical element, the second laser beam has a fifth optical axis perpendicular to the second direction and a sixth optical axis perpendicular to the second direction and the fifth optical axis, the third optical element has a power on the fifth optical axis that is greater than the power on the sixth optical axis, and the second laser beam before reaching the third optical element has a fourth divergence angle θfd2 that is a divergence angle in the direction of the fifth optical axis, andThe second laser beam has a fifth divergence angle θsd2 which is a divergence angle in the direction of the sixth optical axis, and the fourth divergence angle θfd2 and the fourth divergence angle θsd2 satisfy 90°>θfd2>θsd2>0, and a sixth divergence angle θfd22 which is a divergence angle in the direction of the fifth optical axis of the second laser beam output from the third optical element is reduced from the third divergence angle θfd2, and a component of the second laser beam output from the fourth optical element in the direction of the fifth optical axis is collimated. [Effects of the Invention]

[0016] According to the present disclosure, it is possible to realize a compact light source module that suppresses deterioration of a semiconductor laser element and has high coupling efficiency of laser light in an object. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 1 is a perspective view showing the configuration of a light source module according to the first embodiment. [Figure 2] FIG. 2 is a perspective view showing the configuration of the first semiconductor laser module according to the first embodiment. [Figure 3] FIG. 3 is a cross-sectional view showing the configuration of the first semiconductor laser module according to the first embodiment. [Figure 4A] FIG. 4A is a schematic diagram showing an optical system of the first semiconductor laser module according to the first embodiment. [Figure 4B] FIG. 4B is an enlarged view showing an optical system in the vicinity of the first semiconductor laser module according to the first embodiment. [Figure 4C] FIG. 4C is an enlarged view showing an optical system in the vicinity of the second semiconductor laser module according to the first embodiment. [Figure 5] FIG. 5 is a schematic view showing steps of a method for manufacturing the first semiconductor laser module according to the first embodiment. [Figure 6] FIG. 6 is an exploded view showing components of the first semiconductor laser module according to the first embodiment. [Figure 7]FIG. 7 is a perspective view for explaining a method for adjusting the positions of the second optical element and the fifth optical element according to the first embodiment. [Figure 8A] FIG. 8A is a cross-sectional view of the periphery of the first semiconductor laser module according to the first embodiment. [Figure 8B] FIG. 8B is a cross-sectional view of the periphery of the first semiconductor laser module according to another first example of the first embodiment. [Figure 8C] FIG. 8C is a cross-sectional view of the periphery of the first semiconductor laser module according to another second example of the first embodiment. [Figure 9A] FIG. 9A is a cross-sectional view of the periphery of a first semiconductor laser module according to a first comparative example. [Figure 9B] FIG. 9B is a cross-sectional view of the periphery of the first semiconductor laser module according to the second comparative example. [Figure 10A] FIG. 10A is a schematic diagram showing the periphery of the optical fiber according to the first embodiment. [Figure 10B] FIG. 10B is a schematic diagram showing the periphery of the optical fiber according to the first comparative example. [Figure 11] FIG. 11 is a perspective view showing the configuration of a light source module according to the second embodiment. [Figure 12A] FIG. 12A is a schematic diagram showing an optical system of a first semiconductor laser module according to the second embodiment. [Figure 12B] FIG. 12B is a schematic diagram illustrating the convergence angle according to the second embodiment. [Figure 13] FIG. 13 is an exploded perspective view for explaining the configuration of the first semiconductor laser module included in the light source module according to the second embodiment. [Figure 14] FIG. 14 is a perspective view for explaining a method for adjusting the positions of the second optical element and the fifth optical element according to the second embodiment. [Figure 15] FIG. 15 is a diagram showing the distribution of the amount of incident light of the laser light that has been emitted from the seventh optical element and has not yet reached the twelfth optical element according to the first and second embodiments. [Figure 16]FIG. 16 is a cross-sectional view showing a configuration of a first semiconductor laser module included in a light source module according to a first modification of the second embodiment. [Figure 17] FIG. 17 is a schematic diagram showing the configuration and manufacturing method of a first semiconductor laser module according to a first modification of the second embodiment. [Figure 18] FIG. 18 is a cross-sectional view showing a configuration of a first semiconductor laser module included in a light source module according to a second modification of the second embodiment. [Figure 19] FIG. 19 is a schematic view showing a method for manufacturing a first semiconductor laser module according to a second modification of the second embodiment. [Figure 20] FIG. 20 is a schematic diagram showing an optical system of a first semiconductor laser module included in a light source module according to a third modification of the second embodiment. [Figure 21A] FIG. 21A is a schematic view showing an example of a method for manufacturing the first semiconductor laser module according to the third modification of the second embodiment. [Figure 21B] FIG. 21B is a schematic view showing another example of the method for manufacturing the first semiconductor laser module according to the third modification of the second embodiment. [Figure 22] FIG. 22 is a schematic diagram showing an optical system of a first semiconductor laser module included in a light source module according to a fourth modification of the second embodiment. [Figure 23] FIG. 23 is a cross-sectional view showing an optical system of a first semiconductor laser module included in a light source module according to a fifth modification of the second embodiment. [Figure 24] FIG. 24 is a schematic diagram showing an optical system of a first semiconductor laser module included in a light source module according to a sixth modification of the second embodiment. [Figure 25] FIG. 25 is a schematic diagram showing an optical system of a first semiconductor laser module included in a light source module according to a seventh modification of the second embodiment. [Figure 26]FIG. 26 is a schematic diagram showing an optical system of a first semiconductor laser module included in a light source module according to an eighth modification of the second embodiment. [Figure 27] FIG. 27 is a schematic diagram showing an optical system of a first semiconductor laser module included in a light source module according to a ninth modification of the second embodiment. [Figure 28] FIG. 28 is a schematic diagram showing an optical system of a first semiconductor laser module included in a light source module according to a tenth modification of the second embodiment. [Figure 29] FIG. 29 is a perspective view showing an optical system of a light source module according to the third embodiment. [Figure 30] 30 is a cross-sectional view showing a cut surface of the optical system of the light source module according to the third embodiment taken along the line XXX-XXX in FIG. [Figure 31] FIG. 31 is a perspective view showing the configuration of one semiconductor laser module included in the light source module according to the third embodiment. [Figure 32A] FIG. 32A is a perspective view showing a configuration of one semiconductor laser module included in a light source module according to a first modified example of the third embodiment. [Figure 32B] FIG. 32B is a schematic cross-sectional view showing the peripheral configuration of one semiconductor laser element included in one semiconductor laser module according to the first modification of the third embodiment. [Figure 33] FIG. 33 is a diagram showing a configuration of one semiconductor laser module included in a light source module according to a second modification of the third embodiment. [Figure 34] FIG. 34 is a perspective view showing the configuration of a light source module according to the fourth embodiment. [Figure 35A] FIG. 35A is a perspective view showing an example of an optical system of a light source module according to the fourth embodiment. [Figure 35B] FIG. 35B is a perspective view showing the configuration of the periphery of the first semiconductor laser module according to the fourth embodiment. [Figure 36]FIG. 36 is a schematic diagram showing an optical system of a light source module according to the fourth embodiment. [Figure 37A] FIG. 37A is a perspective view showing the arrangement of the first semiconductor laser module according to the fourth embodiment. [Figure 37B] FIG. 37B is a perspective view showing how the semiconductor laser module unit according to the fourth embodiment is fixed. [Figure 37C] FIG. 37C is a perspective view for explaining a method for adjusting the positions of the second optical element and the fifth optical element according to the fourth embodiment. [Figure 38] FIG. 38 is a perspective view showing a configuration around the first semiconductor laser module according to the first modification of the fourth embodiment. [Figure 39] FIG. 39 is a schematic diagram showing an optical system of a light source module according to a second modified example of the fourth embodiment. [Figure 40] FIG. 40 is a perspective view showing a configuration around the first semiconductor laser module according to a second modification of the fourth embodiment. [Figure 41] FIG. 41 is a perspective view showing the configuration of a light source module according to the fifth embodiment. [Figure 42] FIG. 42 is a perspective view showing a configuration of a light source module according to a first modified example of the fifth embodiment. [Figure 43] FIG. 43 is a perspective view showing a configuration of a first semiconductor laser module according to the sixth embodiment. [Figure 44] FIG. 44 is a schematic view showing a method for manufacturing the first semiconductor laser module according to the sixth embodiment. [Figure 45] FIG. 45 is a perspective view showing a configuration of a first semiconductor laser module according to the seventh embodiment. [Figure 46] FIG. 46 is a perspective view showing a configuration of a first semiconductor laser module according to the eighth embodiment. [Figure 47] FIG. 47 is a schematic diagram showing an optical system of a light source module according to the eighth embodiment. [Figure 48]FIG. 48 is a perspective view showing the configuration of a first semiconductor laser module 101x according to the ninth embodiment. [Figure 49] FIG. 49 is a perspective view showing the configuration of a conventional light source module. DETAILED DESCRIPTION OF THE INVENTION

[0018] Hereinafter, light source modules according to embodiments of the present disclosure will be described in detail with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, component arrangements and connection forms, steps, and step sequences shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0019] Furthermore, each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, for example, the scales of the figures do not necessarily match. Furthermore, in each figure, substantially the same components are given the same reference numerals, and redundant explanations are omitted or simplified.

[0020] Furthermore, in this specification, terms indicating relationships between elements, such as "equal," terms indicating the shape of elements, such as plate shape or curved shape, and numerical ranges are not expressions that only express a strict meaning, but are expressions that mean a substantially equivalent range, for example, including a difference of about a few percent.

[0021] Furthermore, in this specification, the terms "above" and "below" do not refer to the upward direction (vertically upward) and downward direction (vertically downward) in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in a stacked configuration. Furthermore, the terms "above" and "below" are applied not only to a case where two components are arranged with a gap between them and another component exists between them, but also to a case where two components are arranged closely together and the two components are in contact with each other.

[0022] Furthermore, in this specification and drawings, the first laser light emitted from the first semiconductor laser element and reaching the target is defined as follows: The optical axis from the first semiconductor laser element to the first, second, fifth, and seventh optical elements is defined as the first optical axis, and the traveling direction of the first laser light along the first optical axis on the first optical axis is defined as the first direction. Furthermore, the fast axis of the first laser light is defined as the second optical axis, and the slow axis of the first laser light is defined as the third optical axis. Note that the first direction and the second optical axis are perpendicular, and the third optical axis is perpendicular to the first direction and the second optical axis.

[0023] Furthermore, the second laser light emitted from the second semiconductor laser element and reaching the target is defined as follows: the optical axis from the second semiconductor laser element to the third, fourth, sixth, and seventh optical elements is defined as the fourth optical axis, the traveling direction of the second laser light on the fourth optical axis is defined as the second direction, the fast axis of the second laser light is defined as the fifth optical axis, and the slow axis of the second laser light is defined as the sixth optical axis. Note that the second direction and the fifth optical axis are perpendicular, and the sixth optical axis is perpendicular to the second direction and the fifth optical axis.

[0024] Furthermore, the x-axis, y-axis, and z-axis represent the three axes of a three-dimensional Cartesian coordinate system relating to the first semiconductor laser element, and the x-direction, y-direction, and z-direction represent the positive directions along the x-axis, y-axis, and z-axis.

[0025] Furthermore, the ξ axis, η axis, and ζ axis indicate the three axes of a three-dimensional Cartesian coordinate system relating to the first semiconductor laser module, and the ξ direction, η direction, and ζ direction indicate positive directions along the above-mentioned ξ axis, η axis, and ζ axis.

[0026] In each embodiment and each modified example, the traveling direction along the optical axis of the first laser light immediately after being emitted from the first semiconductor laser element is defined as the z direction, the direction parallel to the second optical axis of the first laser light immediately after being emitted from the first semiconductor laser element is defined as the x direction, and the direction parallel to the third optical axis of the first laser light immediately after being emitted from the first semiconductor laser element is defined as the y direction.

[0027] Also, the traveling direction along the optical axis of the first laser beam immediately after being emitted from the first semiconductor laser module may be referred to as the ζ direction, the direction parallel to the second optical axis of the first laser beam immediately after being emitted from the first semiconductor laser module may be referred to as the ξ direction, and the direction parallel to the third optical axis may be referred to as the η direction. (Note that when the ξ direction, η direction, and ζ direction are not referred to, the ξ direction, η direction, and ζ direction coincide with the x direction, y direction, and z direction, respectively.)

[0028] Therefore, when the propagation direction, fast axis, and slow axis of the laser light are deflected by transmitting or reflecting off the optical element, the correspondence relationship between the first to sixth directions and the spatial directions (such as the x direction and the ξ direction) changes.

[0029] In the embodiments described below, the x and ξ directions may be referred to as "upward," and the direction opposite to the x and ξ directions may be referred to as "downward." Furthermore, the upper surface may be referred to as "upper surface," and the lower surface may be referred to as "lower surface." Furthermore, in this specification, "planar view" means that the light source module is viewed from the x and ξ directions, and the view in this case is referred to as a plan view.

[0030] (First embodiment) [composition] First, the configuration of the light source module according to the first embodiment will be described with reference to FIGS. 1, 2, 3 and 6. FIG.

[0031] FIG. 1 is a perspective view showing the configuration of a light source module 1 according to a first embodiment. More specifically, (a) of FIG. 1 is a perspective view showing the overall configuration of the light source module 1. (b) of FIG. 1 is an enlarged perspective view of a plurality of semiconductor laser modules 100. FIG. 2 is a perspective view showing the configuration of a first semiconductor laser module 101. FIG. 3 is a cross-sectional view showing the configuration of the first semiconductor laser module 101. FIG. 6 is an exploded view showing the components of the first semiconductor laser module 101. For the sake of explanation, part of a side wall 3 and part of a first package 21 are not shown in FIG. 1.

[0032] In this specification and drawings, the first and second laser beams may be described as follows.

[0033] Specifically, the first laser light may be described as first laser light L11 when it is emitted from the first semiconductor laser element and reaches the first optical element, as first laser light L12 when it reaches the light-transmitting window, as first laser light L13 when it reaches the second optical element, as first laser light L14 when it reaches the fifth optical element, as first laser light L15 when it reaches the seventh optical element, as first laser light L16 when it reaches the twelfth optical element, and as first laser light L17 when it is emitted from the seventh optical element and passes through the twelfth optical element.

[0034] Specifically, the second laser light may be described as second laser light L21 when it is emitted from the second semiconductor laser element and reaches the third optical element, as second laser light L22 when it reaches the light-transmitting window, as second laser light L23 when it reaches the fourth optical element, as second laser light L24 when it reaches the sixth optical element, as second laser light L25 when it reaches the seventh optical element, as second laser light L26 when it reaches the twelfth optical element, and as second laser light L27 when it is emitted from the seventh optical element and passes through the twelfth optical element.

[0035] The first laser beam may be referred to as an optical axis A1, a first direction D1, a second optical axis F1, and a third optical axis S1, and the second laser beam may be referred to as an optical axis A2, a second direction D2, a fifth optical axis F2, and a sixth optical axis S2.

[0036] 1, the light source module 1 includes a case 2, a plurality of fast axis collimator lenses (FAC lenses), a plurality of slow axis collimator lenses (SAC lenses), a seventh optical element 370 composed of a plurality of reflecting mirrors, a twelfth optical element 380 which is a condenser lens, an optical fiber 4, and a plurality of semiconductor laser modules 100. In this embodiment, the FAC lenses are the second and fourth optical elements 320 and 340, and the SAC lenses are the fifth and sixth optical elements 350 and 360.

[0037] The light source module 1 is a module that can spatially combine laser beams emitted from a plurality of semiconductor laser modules 100 by an optical system and emit the combined laser beams.

[0038] The case 2 has a base 6, a side wall 3, and a lid (not shown).

[0039] The side wall 3 is disposed perpendicular to the base 6 of the case 2. The side wall 3 is disposed so as to surround a plurality of semiconductor laser modules 100 and the like. A plurality of terminals (not shown) are formed on the side wall 3, electrically connecting the outside and the inside of the case 2. The side wall 3 is made of, for example, Cu, a Cu alloy, an Fe-Ni-Co alloy, or Al. The base 6 is made of, for example, Cu, a Cu alloy, Al, a ceramic having high thermal conductivity (for example, AlN or BeO), or the like. The lid is a member that covers the top of the case 2.

[0040] A multi-stage base 5 having a plurality of staircase-like steps is provided inside the case 2. On each step of the multi-stage base 5, a plurality of semiconductor laser modules 100 are installed.

[0041] Each of the plurality of semiconductor laser modules 100 is a module that converts input power and emits laser light. In this embodiment, six semiconductor laser modules 100 are provided. For ease of identification, they may be referred to as first to sixth semiconductor laser modules. The plurality of semiconductor laser modules 100 are arranged side by side in the direction of the third optical axis S1. Here, a first semiconductor laser module 101, which is an example of the plurality of semiconductor laser modules 100, will be described.

[0042] The first semiconductor laser module 101 is composed of at least a first package 21, a lid 110, a first semiconductor laser element 11, a light-transmitting window 317, and a first optical element 310. First, the components of the first semiconductor laser module will be described in detail below.

[0043] <First package> 1, 2, 3, and 6, the first package 21 has a frame body 120, a bottom portion 130, and a power supply member formed on the frame body 120. In the first package 21, the frame body 120 is stacked on and fixed to the bottom portion 130. In the first package 21, the direction from the bottom portion 130 toward the frame body 120 is defined as the upward direction, and the surface of the first package 21 as viewed from above is defined as the upper surface.

[0044] The bottom 130 is a plate-shaped member made of an inorganic material with high thermal conductivity. The bottom 130 may be made of, for example, a metal such as Cu or a Cu alloy, or a ceramic or polycrystalline material such as AlN, SiC, or diamond. The frame 120 is a frame-shaped member that exists mainly around the periphery of the bottom 130 and has an opening 1201 (first opening) that opens in the center in a planar view. The opening 1201 has a rectangular shape in a planar view. The frame 120 is made mainly of an inorganic insulating material such as alumina ceramic or AlN ceramic. The upper surface of the portion of the bottom 130 near the center that is not covered by the frame 120 becomes the semiconductor laser element mounting surface 130a.

[0045] The frame 120 has power supply members inside and on the surface of the frame 120. The power supply members are made up of an anode lead electrode 131, a cathode lead electrode 134, an anode electrode 132, and a cathode electrode 135, which are made up of patterned metal wiring.

[0046] 6, an opening 170 (second opening) connected to the opening 1201 is formed on one side surface of the first package 21, and a second preliminary bonding film 152 made of a metal multilayer film of, for example, Ni, Pt, or Au is formed around the opening 170. In other words, the opening 170 is an opening that spatially connects the opening 1201 to the outside of the first semiconductor laser module 101. In addition, on the upper surface of the frame 120, a first preliminary bonding film 151 made of, for example, an inorganic material (metal such as Ni, Pt, or Au) is formed so as to surround the periphery of the opening 1201.

[0047] The anode output electrode 131 is an electrode that connects the anode electrode 132 to the outside of the first semiconductor laser module 101, and the cathode output electrode 134 is an electrode that connects the cathode electrode 135 to the outside of the first semiconductor laser module 101. The anode output electrode 131 and the cathode output electrode 134 are formed on the upper surface of the frame 120 facing a light-transmitting window 317 (described later) across an opening 1201. In other words, the anode output electrode 131 and the cathode output electrode 134 are located on the opposite side of the opening 1201 from the position where the light-transmitting window 317 of the first package 21 is located. The anode output electrode 131 and the cathode output electrode 134 are formed on the upper surface of the first package 21 (i.e., the upper surface of the frame 120) above the semiconductor laser element mounting surface 130a.

[0048] The anode electrode 132 and the cathode electrode 135 are electrodes that electrically connect the inside of the opening 1201 with the outside of the first semiconductor laser module 101. Inside the opening 1201, a flat table on which the anode electrode 132 is provided and a flat table on which the cathode electrode 135 is provided are provided. The two flat tables are located on opposite sides of the rectangular opening 1201, and neither of the two flat tables is located on the side on which the opening 170 is provided. In other words, inside the opening 1201, flat tables are provided in a direction perpendicular to the direction from the opening 170 toward the anode lead electrode 131, and the anode electrode 132 is formed on one flat table, and the cathode electrode 135 is formed on the other flat table. The anode lead electrode 131 and the cathode lead electrode 134 are configured to be electrically connected to the anode electrode 132 and the cathode electrode 135, respectively, by metal wiring, via electrodes, etc. Furthermore, the anode electrode 132, the cathode electrode 135, and the bottom portion 130 are electrically insulated from one another.

[0049] <Lid> The lid 110 is made of an inorganic material such as a metal or a ceramic material, and has a preliminary bonding film (not shown) made of Au or the like formed on part or all of its surface. The lid 110 also covers the opening 1201 from above.

[0050] <First semiconductor laser element> The first semiconductor laser element 11 is a laser element having a semiconductor laminated film and an optical waveguide formed on a semiconductor substrate. The first semiconductor laser element 11 converts external power input to the optical waveguide into stimulated emission light such as laser light and emits the light from a light-emitting point at one end of the optical waveguide. The second optical axis F1, which is the fast axis of the laser light, is an axis in the stacking direction of the semiconductor laminated film of the first semiconductor laser element 11, and the third optical axis S1, which is the slow axis perpendicular to the fast axis, is an axis parallel to the stacking plane of the semiconductor laminated film. The first semiconductor laser element 11 can change the wavelength of the emitted first laser light depending on the semiconductor material used. For example, by using a nitride-based semiconductor laser element containing Al, Ga, and In nitrides as its main components, the first semiconductor laser element 11 can emit first laser light having a peak wavelength between 350 nm and 550 nm. Furthermore, for example, by making the first semiconductor laser element 11 a semiconductor laser element whose main component is a semiconductor composed of Al, Ga, In, As, and P, the first semiconductor laser element 11 can emit first laser light having a peak wavelength between 600 nm and 1600 nm. Note that the first semiconductor laser element 11 is not limited to semiconductor laser elements composed of the above semiconductor materials, and the wavelength of the first laser light emitted by the first semiconductor laser element 11 is not limited to the above wavelength.

[0051] The first semiconductor laser element 11 has a rectangular shape that is long in the waveguiding direction of the optical waveguide. The optical waveguide has a width of, for example, 5 μm to 300 μm and a length of, for example, 500 μm to 5 mm. The first semiconductor laser element 11 is a transverse multimode laser in which the first laser light has multiple modes in the slow axis.

[0052] In the present embodiment, the first semiconductor laser element 11 is a laser element having Fabry-Perot mirrors formed at both ends of the optical waveguide, but is not limited to this. For example, the first semiconductor laser element 11 may be a so-called superluminescent diode in which no mirror is formed on the light-emitting point side of the optical waveguide. The first semiconductor laser element 11 may also be an element for a so-called external cavity type semiconductor laser in which no mirror is formed on the light-emitting point side of the optical waveguide, but a cavity mirror is arranged as a separate component from the first semiconductor laser element 11 on the side in the direction of emission of the emitted light to perform laser oscillation.

[0053] In this embodiment, the first semiconductor laser element 11 is disposed in the opening 1201 together with the submount 50 .

[0054] <Submount> In this embodiment, the first semiconductor laser device 11 is fixed on a submount 50. The submount 50 is shaped like a block and made of an insulating material, such as a crystal, such as AlN or SiC, or a ceramic. Patterned first and second metal films 137 and 138 are arranged on the upper surface of the block and are insulated from each other. A second bonding member 142 is arranged on the first metal film 137. The first and second metal films 137 and 138 are made of one or more metal films selected from the group consisting of Ni, Cu, Pt, and Au. The second bonding member 142 is made of an inorganic material, such as a solder material, such as AuSn or SnAgCu. In this embodiment, the submount 50 is a separate component from the first package 21; however, it may be integrally formed as part of the first package 21.

[0055] <First optical element> The first optical element 310 is an optical component onto which the first laser light emitted from the first semiconductor laser element 11 is incident, and is composed of one or more optical elements. In this embodiment, the first optical element 310 is composed of one optical component.

[0056] The first optical element 310 is an optical component whose power along the second optical axis F1 is greater than that along the third optical axis S1. As an example, the first optical element 310 is a cylindrical lens having a power axis and a non-power axis. The power axis and the non-power axis are arranged perpendicular to each other, and the power axis is arranged parallel to the second optical axis F1. The first optical element 310 has a cylindrical surface that is convex in the direction of the power axis, i.e., a convex cylindrical surface.

[0057] The first optical element 310 is made of an inorganic transparent material such as glass, and has anti-reflection coatings formed on the incident and exit surfaces of the first laser beam, the coatings being matched to the wavelength of the laser beam. In this embodiment, the first optical element 310 is, as an example, a plano-convex cylindrical lens in which the incident surface of the first laser beam is flat and the exit surface is convex. Such a first optical element 310 can narrow the divergence angle about the second optical axis F1.

[0058] <Translucent window> The light-transmitting window 317 is an optical component fixed to the first package 21 and transmitting the first laser light emitted from the first optical element. The light-transmitting window 317 and a part of the first optical element 310 may be integrally formed. The light-transmitting window 317 may also be configured as a composite component in which the optical element is fixed to a frame or the like. In this embodiment, the light-transmitting window 317 is an optical component made of a rectangular inorganic glass plate, with anti-reflection coatings further formed on the entrance surface and exit surface.

[0059] <Semiconductor laser module> Next, we will explain the configuration of the first semiconductor laser module 101. Figure 2 is a perspective view for explaining the configuration of the first semiconductor laser module 101, showing a state in which the lid 110 is removed upward from the first package 21.

[0060] The first semiconductor laser element 11 is disposed on the upper surface of the submount 50. At this time, the optical waveguide of the first semiconductor laser element 11 is disposed on the submount 50 side. In other words, the first semiconductor laser element 11 is fixed by so-called junction-down mounting. As shown in FIG. 2, the first laser light L11 is emitted from an emission point (not shown) of the first semiconductor laser element 11 and travels toward the first optical element 310 and the light-transmitting window 317, and the first laser light L13 is emitted from the light-transmitting window 317.

[0061] The first laser light is also light emitted by the first semiconductor laser module 101. That is, in this embodiment, the direction of the light emitted by the first semiconductor laser module 101 travels in the same direction as the first laser light immediately after being emitted from the first semiconductor laser element 11. Therefore, the second optical axis F1 is parallel to the stacking direction of the bottom 130 and the frame 120 of the first package 21. The third optical axis S1 is parallel to the semiconductor laser element mounting surface 130a of the bottom 130.

[0062] 3, a first metal film 137 and a second bonding member 142 are disposed in this order between the submount 50 and the first semiconductor laser element 11. At this time, the first metal film 137 of the submount 50 is exposed on the submount 50 so as to extend from between the submount 50 and the first semiconductor laser element 11 in the direction of the anode electrode 132. The second metal film 138 is disposed on the cathode electrode 135 side of the first semiconductor laser element 11.

[0063] The submount 50 is disposed above and fixed to the bottom 130 via a fifth bonding member 145. The fifth bonding member 145 is made of, for example, an inorganic material (for example, a solder material such as AuSn or a metal such as Au) having a thickness of 1 μm or more and 50 μm or less.

[0064] The first optical element 310 is a plano-convex cylindrical lens having a convex cylindrical surface, and is arranged so that its power axis is parallel to the second optical axis F1 of the first laser beam and its non-power axis is parallel to the third optical axis S1. Therefore, the first optical element 310 is a lens that has power only with respect to the fast axis of the incident beam and functions as an FA lens. The FA lens can control the divergence angle of the laser beam on the fast axis.

[0065] The first optical element 310 is provided above the first support member 161 .

[0066] The first support member 161 is a member that supports the first optical element 310, and is made of a glass block or the like. More specifically, the first support member 161 is provided on the side surface of the submount 50 on the ζ direction side, via the metal film 50F and the third bonding member 143. The third bonding member 143 is made of, for example, an inorganic material (such as SnSb, for example).

[0067] The light-transmitting window 317 is fixed to the first package 21 by a bonding member (hereinafter, referred to as a fourth bonding member 144) made of an inorganic material. More specifically, the light-transmitting window 317 is fixed to a side surface of the frame body 120 on the ζ-direction side via the fourth bonding member 144 and the second bonding preparatory film 152. In other words, the light-transmitting window 317 constitutes a window of the first package 21. The light-transmitting window 317 hermetically seals the first package 21 and is a window through which the first laser light passes and through which the first laser light emitted from the first semiconductor laser element 11 is extracted to the outside of the first semiconductor laser module 101. The light-transmitting window 317 is provided on the outside of the frame body 120 so as to cover the opening 170. The fourth bonding member 144 is made of, for example, an inorganic material (for example, a solder material such as AuSn). The second bonding preliminary film 152 is made of, for example, an inorganic material (for example, a metal such as Ni, Pt, or Au).

[0068] The lid 110 is connected to the upper surface (the surface in the ξ direction) of the frame body 120 via a first bonding member 141 and a first preliminary bonding film 151 so as to cover the opening 1201. The first bonding member 141 is made of an inorganic material such as a solder material, for example, SnAu, SnAgCu, or In. In this case, the lid 110 does not cover the anode lead electrode 131 and the cathode lead electrode 134 formed on the upper surface of the frame body 120.

[0069] The first semiconductor laser module 101 further includes metal wires 190, 191, and 192, which electrically connect the first semiconductor laser element 11 and the power supply member of the frame 120.

[0070] Specifically, the metal wire 190 connects the surface of the first semiconductor laser element 11 facing the semiconductor substrate to the second metal film 138 of the submount 50. The surface of the first semiconductor laser element 11 facing the optical waveguide is electrically connected to the first metal film 137 by the second bonding member 142.

[0071] The metal wire 191 electrically connects the first metal film 137 of the submount 50 to the anode electrode 132 of the first package 21. Therefore, the anode electrode 132 is electrically connected to the first semiconductor laser element 11 via the metal wire 191, the first metal film 137, and the second bonding member 142.

[0072] The metal wire 192 electrically connects the second metal film 138 of the submount 50 to the cathode electrode 135 of the first package 21. Therefore, the cathode electrode 135 is electrically connected to the first semiconductor laser element 11 via the metal wire 192, the second metal film 138, and the metal wire 190.

[0073] With the above configuration, the first semiconductor laser element 11 can be connected to the outside of the first package 21 by a power supply member consisting of the anode lead electrode 131, the cathode lead electrode 134, and the like.

[0074] With the above-described configuration, in the first semiconductor laser module 101 of this embodiment, as shown in FIG. 3, the first optical element 310 and the first semiconductor laser element 11 are hermetically sealed within a structure consisting of the first package 21, the lid 110, and the light-transmitting window 317.

[0075] As a result, the first semiconductor laser element 11 is protected from impurities such as organic substances from outside the first package 21, even while receiving power from outside the first package 21. Therefore, it is possible to prevent deterioration of the first semiconductor laser element 11 due to impurities such as organic substances adhering to the light-emitting point of the first semiconductor laser element 11 during operation of the first semiconductor laser element 11.

[0076] Furthermore, in the first package 21, each component is fixed by a bonding member made of an inorganic material such as metal. Therefore, impurities such as organic substances are less likely to deposit around the first semiconductor laser element 11. This makes it possible to suppress deterioration of the first semiconductor laser element 11 due to the adhesion of impurities such as organic substances.

[0077] Furthermore, with the above-described configuration, in this embodiment, a light-transmitting window 317 is provided on a side surface of the frame body 120 in the first direction D1, and the first optical element 310 and the first semiconductor laser element 11 are provided facing the light-transmitting window 317. With this configuration, the first laser light emitted from the first semiconductor laser element 11 can be output to the outside. Furthermore, the first laser light emitted from the first semiconductor laser element 11 is emitted from a predetermined height, and the first optical element 310, which is an FA lens, can emit the first laser light with a reduced divergence angle on the second optical axis F1 (fast axis).

[0078] In the above configuration, the anode electrode 132 and the cathode electrode 135 are elongated in the first direction D1, which is the emission direction of the first laser light, and can be disposed close to the submount 50 in a position perpendicular to the first direction D1. With this configuration, a plurality of metal wires 190, 191, and 192 can be easily formed as shown in FIG. 3. This makes it possible to supply more power to the first semiconductor laser element 11 from outside the first package 21. This makes it possible to emit laser light with a higher optical output from the first semiconductor laser module.

[0079] In the above configuration, the first package 21 may have a rectangular shape that is elongated in the first direction D1, which is the emission direction of the first laser light. The anode extraction electrode 131 and the cathode extraction electrode 134 are disposed on the opposite side of the opening 1201 from the position where the light-transmitting window 317 of the first package 21 is disposed. This configuration allows the light-transmitting window 317 and the first optical element 310 to be disposed near the emission portion of the first laser light of the first semiconductor laser module 101. This makes it possible to easily configure the first semiconductor laser module 101 and to provide greater flexibility in the optical design of the first semiconductor laser module 101.

[0080] Of the plurality of semiconductor laser modules 100, the second to sixth semiconductor laser modules have the same configuration as the first semiconductor laser module 101, and exhibit the same effects.

[0081] For example, in the second semiconductor laser module 102, the second semiconductor laser element 12 is fixed to an opening of the second package 22 via a submount 50. The second semiconductor laser element 12 is hermetically sealed by the second package 22, a light-transmitting window 337, and a lid 110. A third optical element 330 is also fixed inside the second package 22. Therefore, the second laser light emitted from the second semiconductor laser element 12 enters the third optical element 330, becomes second laser light with a reduced divergence angle on the second optical axis F1 (fast axis), and can be emitted to the outside from the light-transmitting window 337.

[0082] The second package 22 also has a frame 120, a bottom 130, and a power supply member formed on the frame 120. The power supply member is wiring that electrically connects the inside and outside of the second package 22, and an anode output electrode 1312 and a cathode output electrode 1342 are formed on the top surface of the second package 22 (i.e., the top surface of the frame 120). The anode output electrode 1312 and the cathode output electrode 1342 are formed on the second package 22 on the opposite side of the mounting position of the semiconductor laser element from the attachment position of the light-transmitting window 317.

[0083] 1, in the light source module 1, the cathode output electrode 134 of the first semiconductor laser module 101 is electrically connected to the anode output electrode 1312 of the second semiconductor laser module 102 arranged adjacently by a metal wire 193. The cathode output electrode 1342 of the second semiconductor laser module 102 is electrically connected to the anode output electrode 1313 of the third semiconductor laser module 103 arranged adjacently by a metal wire 1931. In this way, within the light source module 1, adjacent semiconductor laser modules 100 can be easily electrically connected in series.

[0084] In this embodiment, the first and second semiconductor laser modules 101 and 102 are arranged side by side on the multi-stage base 5 .

[0085] The directions in which the first laser beam L11 and the second laser beam L21 are emitted from the first and second semiconductor laser elements 11 and 12 are the same. In this case, the first and second semiconductor laser modules 101 and 102 have a rectangular shape that is long in the direction of the first and second laser beams. Therefore, the first and second semiconductor laser modules can be arranged close to each other, thereby realizing a compact light source module.

[0086] Similarly, the first to sixth semiconductor laser modules can be densely arranged within the light source module 1, thereby enabling the light source module 1 to be made smaller. Furthermore, in the first to sixth semiconductor laser modules, anode and cathode extraction electrodes are formed on the upper surfaces of the first to sixth packages above the mounting position of the semiconductor laser element on the opposite side to the emission direction of the first to sixth laser beams. Therefore, the first to sixth semiconductor laser modules can be easily electrically connected in series using metal wires or the like. Therefore, the electrical wiring within the light source module 1 can be easily configured.

[0087] Next, the optical configuration and functions of the light source module 1 including a plurality of FAC lenses will be described with reference to FIG.

[0088] An FAC lens and an SAC lens are arranged in order in the emission direction (such as the first direction D1) of the laser light from each of the semiconductor laser modules 100. That is, a plurality of FAC lenses and SAC lenses are arranged in the light source module 1 in correspondence with the number of semiconductor laser modules 100.

[0089] An example of an FAC lens is the second optical element 320 arranged in the emission direction of the laser light from the first semiconductor laser module 101, and the fourth optical element 340 arranged in the emission direction of the laser light from the second semiconductor laser module 102. The first laser light that has passed through the first optical element 310 is incident on the second optical element 320, and the second laser light that has passed through the third optical element 330 is incident on the fourth optical element 340.

[0090] An FAC lens is a lens with a convex cylindrical surface. For example, the FAC lens is made of glass with an anti-reflection coating on its surface, and is a plano-convex cylindrical lens with a flat surface on the laser light incident side and a convex surface on the laser light exit side.

[0091] The second optical element 320 has a cylindrical surface that is convex in the power axis direction, i.e., a convex cylindrical surface. The second optical element 320 has a non-power axis in a direction perpendicular to the power axis. The fourth optical element 340 has a cylindrical surface that is convex in the power axis direction, i.e., a convex cylindrical surface. The fourth optical element 340 has a non-power axis in a direction perpendicular to the power axis.

[0092] The second optical element 320 is arranged so that its power axis is parallel to the second optical axis F1 of the first laser beam and its non-power axis is parallel to the third optical axis S1. Similarly, the fourth optical element 340 is arranged so that its power axis is parallel to the fifth optical axis F2 of the second laser beam and its non-power axis is parallel to the sixth optical axis S2.

[0093] In other words, the second optical element 320 and the fourth optical element 340 are arranged so as to form lenses having power in the fast axis of the laser light. Each of the multiple FAC lenses collimates the component of the laser light incident thereon in the fast axis direction.

[0094] An example of an SAC lens is a fifth optical element 350 arranged in the emission direction of the laser light from the first semiconductor laser module 101, and a sixth optical element 360 arranged in the emission direction of the laser light from the second semiconductor laser module 102. That is, in this embodiment, the second optical element 320 is arranged between the first optical element 310 and the fifth optical element 350, and the fourth optical element 340 is arranged between the third optical element 330 and the sixth optical element 360.

[0095] The SAC lens is a lens with a convex cylindrical surface. For example, the SAC lens is a plano-convex cylindrical lens made of glass with an anti-reflection coating on its surface.

[0096] The fifth optical element 350 has a cylindrical surface that is convex in the power axis direction, i.e., a convex cylindrical surface. The fifth optical element 350 has a non-power axis in a direction perpendicular to the power axis. The sixth optical element 360 has a cylindrical surface that is convex in the power axis direction, i.e., a convex cylindrical surface. The sixth optical element 360 has a non-power axis in a direction perpendicular to the power axis.

[0097] The fifth optical element 350 is disposed so that its power axis is parallel to the third optical axis S1 of the first laser beam and its non-power axis is parallel to the second optical axis F1. Similarly, the sixth optical element 360 is disposed so that its power axis is parallel to the sixth optical axis S2 of the second laser beam and its non-power axis is parallel to the fifth optical axis F2. In other words, the fifth optical element 350 and the sixth optical element 360 are lenses having power in the slow axis of the laser beam. Each of the multiple SAC lenses collimates the component of the incident laser beam in the slow axis direction.

[0098] With the above configuration, the laser light emitted from the plurality of semiconductor laser modules 100 and passed through the plurality of SAC lenses travels as collimated emitted light in both the fast axis and the slow axis.

[0099] Furthermore, seventh optical elements 370, which are a plurality of reflecting mirrors, are arranged in the emission direction of the laser light from each of the plurality of semiconductor laser modules 100 (for example, the first direction D1 in the first semiconductor laser module 101).

[0100] The seventh optical element 370 is an optical component onto which the first laser beam that has passed through the fifth optical element 350 and the second laser beam that has passed through the sixth optical element 360 are incident. The multiple reflecting mirrors of the seventh optical element 370 reflect the laser beams collimated by the multiple FAC lenses and multiple SAC lenses, respectively, and deflect the direction of the laser beams by 90°. The laser beams reflected by the seventh optical element 370 are spatially multiplexed so that their fast axes become the same optical axis, and reach the twelfth optical element 380 fixed to the base 6.

[0101] The twelfth optical element 380 is an optical component onto which the first laser beam that has passed through the second optical element 320 and the fifth optical element 350 and the second laser beam that has passed through the fourth optical element 340 and the sixth optical element 360 are incident. Furthermore, the twelfth optical element 380 is also an optical component onto which the first laser beam and the second laser beam that have passed through the seventh optical element 370 are incident. In this embodiment, the twelfth optical element 380 is a focusing lens that focuses the first laser beam and the second laser beam that have reached it (i.e., the laser beams from the multiple semiconductor laser modules 100). The parallel laser beams whose fast axes are aligned with each other by the seventh optical element 370 are incident on the twelfth optical element 380. Furthermore, the first laser beam and the second laser beam focused by the twelfth optical element 380 are incident on an end face of the optical fiber 4, which is an example of an object. By providing such a twelfth optical element 380, the first laser light and the second laser light can be efficiently focused on the end face of the optical fiber 4, which is the target.

[0102] The optical fiber 4 is provided so as to penetrate the side wall 3. The laser light from each of the semiconductor laser modules 100, which is collected by the seventh optical element 370, is coupled to the optical fiber 4.

[0103] The plurality of FAC lenses, the plurality of SAC lenses, and the plurality of seventh optical elements 370 for each of the plurality of semiconductor laser modules 100 described above can all have the same shape.

[0104] [Behavior of laser light] Next, a description will be given of the laser beams emitted from the plurality of semiconductor laser modules 100. Here, the first semiconductor laser module 101 will be used as an example for the description, but the other semiconductor laser modules 100 also exhibit similar behavior of the laser beams.

[0105] 4A is a schematic diagram showing the optical system of the first semiconductor laser module 101. Specifically, (a) of FIG. 4A is a plan view, and (b) of FIG. 4A is a cross-sectional view showing a cut surface taken along line bb in (a) of FIG. 4A. Here, in FIG. 4A, the first package 21 and the lid 110 are schematically shown as the first package 21, and the first semiconductor laser element 11 is hermetically sealed by the first package 21 and the light-transmitting window 317. For the sake of explanation, the first semiconductor laser module 101 is shown in a so-called junction-up configuration in which the optical waveguide 61 faces upward.

[0106] Fig. 4B is an enlarged view showing the optical system near the first semiconductor laser module 101 in Fig. 4A. Fig. 4B(a) is an enlarged view of Fig. 4A(a), and Fig. 4B(b) is an enlarged view of Fig. 4A(b).

[0107] 4A(b) and 4B(b) are cross-sectional views, but for ease of understanding of the behavior of the first laser light, hatching is not applied to the first optical element 310, the light-transmitting window 317, the fifth optical element 350, and the seventh optical element 370. Hatching may also be omitted in the subsequent figures.

[0108] As shown in FIG. 4A, the first laser light L11 emitted from the light emitting point 60 of the optical waveguide 61 of the first semiconductor laser element 11 is light having a predetermined divergence angle. In this case, the output angle dependency of the light intensity of the first laser light L11 is such that the light intensity is strongest near the output angle of 0 degrees, i.e., the light intensity has an approximately single-peak distribution. Also, in FIG. 4A, the light intensity of the first laser light is 1 / (e 2) is drawn at a position where the value of the first laser beam is reached, and the spread of the first laser beam is expressed.

[0109] In this embodiment, the divergence angle of the laser light is set to 1 / (e 2 ) and the optical axis A1. Here, the divergence angle of the laser light on the fast axis is written as θfd, and the divergence angle on the slow axis is written as θsd.

[0110] In the present embodiment, the first laser beam L11 has a first divergence angle θfd1 on the second optical axis F1 and a second divergence angle θsd1 on the third optical axis S1 before reaching the first optical element 310. Furthermore, the first laser beams L12 and L13 that have passed through the first optical element 310 and the light-transmitting window 317 have a third divergence angle θfd12 on the second optical axis F1.

[0111] The divergence angle will be explained in more detail with reference to Fig. 4B. Fig. 4B(a) is an enlarged view of the vicinity of the light-emitting point 60 of the semiconductor laser element of Fig. 4A(a), and Fig. 4B(b) is an enlarged view of the vicinity of the light-emitting point 60 of the semiconductor laser element of Fig. 4A(b).

[0112] First, the behavior of the first laser light will be described.

[0113] The first divergence angle θfd1 and the second divergence angle θsd1 satisfy the relationship 90°>θfd1>θsd1>0. Specifically, the first divergence angle θfd1 is between 18° and 27°, and the second divergence angle θsd1 is between 3° and 10°. The third divergence angle θfd12, which is the divergence angle of the first laser beams L12 and L13 that have passed through the first optical element 310 in the direction of the second optical axis F1, is reduced from the first divergence angle θfd1. Specifically, the third divergence angle θfd12 is between 9° and 20°.

[0114] The second laser beam is also affected in the same way. Here, the second laser beam emitted by the second semiconductor laser element in the second semiconductor laser module 102 will be described with reference to Fig. 4C. Fig. 4C is an enlarged view showing the optical system near the second semiconductor laser module 102. More specifically, Fig. 4C (a) is a view corresponding to Fig. 4B (a), and Fig. 4C (b) is a view corresponding to Fig. 4B (b).

[0115] That is, the fourth divergence angle θfd2 of the second laser beam L21 emitted from the second semiconductor laser element along the fifth optical axis F2 and the fifth divergence angle θsd2 of the second laser beam L21 along the sixth optical axis S2 satisfy the relationship 90°>θfd2>θsd2>0. Specifically, the fourth divergence angle θfd2 is between 18° and 27°, and the fifth divergence angle θsd2 is between 3° and 10°. Furthermore, the sixth divergence angle θfd22, which is the divergence angle of the second laser beam L22, L23 along the fifth optical axis F2 after passing through the third optical element 330, is reduced from the fourth divergence angle θfd2. Specifically, the sixth divergence angle θfd22 is between 9° and 20°.

[0116] Furthermore, the first laser light will be described.

[0117] Next, the first laser beam L13 that has passed through the first optical element 310 is incident on the second optical element 320. Then, the first laser beam L14 that has passed through the second optical element 320 has a component of the second optical axis F1 collimated. The first laser beam L15 that has passed through the fifth optical element 350 has a component of the third optical axis S1 collimated.

[0118] Similarly, the second laser beam L23 that has passed through the third optical element 330 is incident on the fourth optical element 340. Then, the component of the second laser beam L23 that has passed through the fourth optical element 340 is collimated along the fifth optical axis F2. The second laser beam L23 that has passed through the sixth optical element 360 is collimated along the third optical axis S1.

[0119] At this time, the light intensity distribution of the first laser light L15 emitted from the fifth optical element 350 and propagating therethrough is such that the light intensity is 1 / (e 2 ) is defined as the beam width, the optical design is such that the beam width BFw on the second optical axis F1 is narrower than the beam width BSw on the third optical axis S1.

[0120] Then, the first laser light L17 collimated in both the second optical axis F1 and the third optical axis S1 reaches the twelfth optical element 380, where it is condensed, and reaches the end face of the optical fiber 4.

[0121] As described above, the first optical element 310 is provided near the first semiconductor laser element 11 inside the first package 21. Therefore, the divergence angle of the first laser light is reduced from the first divergence angle θfd1 to the third divergence angle θfd12 before the beam width of the first laser light is significantly increased along the second optical axis F1. This narrows the beam width of the first laser light L14 along the second optical axis F1 when the first laser light L14 is incident on the second optical element 320. This reduces the size of the second optical element 320. Furthermore, since the beam width BFw of the first laser light L15 along the second optical axis F1 after passing through the fifth optical element 350 can be narrowed, the beams of laser light from other semiconductor laser modules 100 can be aligned along the second optical axis F1. This reduces the size of the twelfth optical element 380. This reduces the size of the optical system of the light source module 1.

[0122] Furthermore, when multiple semiconductor laser modules 100 are arranged in the light source module 1, there is a misalignment in the position and direction when the semiconductor laser elements are mounted in the semiconductor laser modules 100, and a misalignment in the position and direction when the semiconductor laser modules 100 are mounted in the light source module 1. As a result, the positions and directions of the laser beams emitted from the multiple semiconductor laser modules 100 vary within the range of mounting accuracy. Therefore, in order to focus each laser beam at a predetermined position, it is necessary to individually adjust the focusing position of each laser beam. Because the multiple FAC lenses, such as the second optical element 320, are located outside the first package 21, it is easy to individually adjust the positions of the multiple FAC lenses. Therefore, the first laser beam L17 is efficiently focused at a predetermined position on the end face of the optical fiber 4, which is the target.

[0123] Furthermore, the plurality of SAC lenses, such as the fifth optical element 350, are also located outside the first package 21. This makes it easy to adjust the positions of the plurality of SAC lenses. As a result, the first laser light L17 is more efficiently focused at a predetermined location on the end face of the optical fiber 4, which is the target.

[0124] Of the plurality of semiconductor laser modules 100, the second to sixth semiconductor laser modules have the same configuration as the first semiconductor laser module 101, and exhibit the same effects.

[0125] [Method of manufacturing semiconductor laser module] 2, 5, and 6, an example of a method for manufacturing a plurality of semiconductor laser modules 100 will be described. Here, the first semiconductor laser module 101 will be used as an example for description, but the other semiconductor laser modules 100 are also manufactured by the same method.

[0126] 5 and 6 are schematic diagrams showing steps in a method for manufacturing the first semiconductor laser module 101. Note that in the drawings showing the manufacturing method below, the installation direction and the like may be indicated by dotted arrows.

[0127] The first semiconductor laser module 101 is manufactured in the following order as shown in FIGS.

[0128] 5, the bottom 130 and the frame body 120 are stacked together, and then the bottom 130 and the frame body 120 are fixed together to manufacture the first package 21. More specifically, the frame body 120 is configured by stacking a first frame portion 121, a second frame portion 122, and a third frame portion 123.

[0129] The first frame 121 is a ceramic plate having a rectangular opening 1211 formed inside.

[0130] The second frame 122 is a ceramic plate having an opening 1221 that opens outward in the first direction D1. The opening 1221 is composed of an opening having the same shape as the opening 1211 and a notch formed in the first direction D1. The notch becomes the opening 170 of the first package 21. An anode electrode 132 and a cathode electrode 135 are disposed in the second frame 122. More specifically, the anode electrode 132, which is formed of patterned metal wiring by film formation, is disposed at one end of the opening 1221 in the η direction, and the cathode electrode 135 is disposed at the other end of the opening 1221 in the η direction.

[0131] Additionally, an anode lead electrode 131 and a cathode lead electrode 134, each composed of patterned metal wiring formed by film deposition, are disposed on the third frame 123 so as to be spaced apart in the η direction. The third frame 123 is a ceramic plate with a rectangular opening 1231 formed inside. The width of the opening 1231 in the η direction is wider than the width of the opening 1221 in the η direction, and the width of the opening 1231 in the ζ direction is equal to the width of the opening 1221 in the ζ direction. The second frame 122 is laminated on the first frame 121 so that the openings 1211 and 1221 are accurately aligned during lamination. The third frame 123 is laminated on the second frame 122 so that the anode electrode 132 and the cathode electrode 135 are exposed in the opening 1231 during lamination. In addition, bottom 130 and frame body 120 are stacked so that the side surfaces in the first direction of bottom 130, first frame portion 121, second frame portion 122, and third frame portion 123 coincide with each other. With this configuration, frame body 120 is formed with openings 1211, 1221, and 1231, and opening 1201 is formed in frame body 120, connecting the upper surface of first package 21 to bottom 130 and exposing the surface of bottom 130.

[0132] Furthermore, via electrodes 133 and 136 are formed in the third frame portion 123 so as to penetrate from the upper surface to the lower surface of the third frame portion 123. The via electrodes 133 and 136 electrically connect the anode lead electrode 131 and the cathode lead electrode 134 to the anode electrode 132 and the cathode electrode 135.

[0133] The bottom portion 130, the first frame portion 121, the second frame portion 122, and the third frame portion 123 are formed, for example, from ceramic green sheets, and then stacked on the bottom portion 130 and sintered by heating, thereby being fixed to the bottom portion 130. Then, an Au film is formed on the exposed surfaces of the bottom portion 130 and each electrode by electroless plating or the like. In addition, a second bonding preliminary film 152 is formed around the opening 170 by vacuum deposition or the like.

[0134] By the above method, the opening 170 and the opening 1201 are formed, and the first package 21 having the semiconductor laser element mounting surface 130a formed therein is manufactured.

[0135] Next, components such as the first semiconductor laser element 11 are mounted in the first package 21 as shown in FIG.

[0136] First, the first semiconductor laser element 11 is mounted above the submount 50. At this time, the first semiconductor laser element 11 is placed on the second bonding member 142 of the submount 50 and fixed by being pressed while being heated.

[0137] Next, metal wires 190 are wired to electrically connect the first semiconductor laser element 11 to the second metal film 138 of the submount 50.

[0138] On the other hand, a light-transmitting window 317 is fixed to the opening 170 of the first package 21. At this time, the second preliminary bonding film 152 and the fourth bonding member 144 are formed around the periphery of the light-transmitting window 317, and the light-transmitting window 317 is pressed while the first package 21 is heated, thereby fixing the light-transmitting window 317.

[0139] Subsequently, the submount 50 on which the first semiconductor laser element 11 is mounted is mounted by a fifth bonding member 145 on the semiconductor laser element mounting surface 130 a of the bottom portion 130 exposed in the opening 1201 .

[0140] Next, the first optical element 310 is fixed using the first support member 161 so as to be at a predetermined height and distance from the first semiconductor laser element 11. At this time, in the light source module 1 of this embodiment, the optical axis A1 is adjusted by an FAC lens and an SAC lens arranged outside the first semiconductor laser module 101. Therefore, in this process, it is not necessary to use a high-precision position adjustment and fixing technique for the first optical element 310, such as active alignment. Specifically, the first optical element 310 is fixed to a predetermined position on the first support member 161 using optical contact, laser welding, or soldering. At this time, a metal film (not shown) and a third bonding member 143 are formed on the semiconductor laser element side of the first support member 161. Then, while the first package on which the submount 50 is mounted is heated, the position of the first support member 161 is adjusted and attached to the metal film 50F of the submount 50, and the first support member 161 is fixed to the submount 50 by cooling. This configuration makes it possible to easily manufacture the first semiconductor laser module 101 in which the first optical element 310 is disposed.

[0141] Furthermore, as shown in FIG. 2, the anode electrode 132 and the cathode electrode 135 provided on the submount 50 and the frame 120 are electrically connected by metal wires 191 and 192, respectively.

[0142] Then, the lid 110 is disposed above the first semiconductor laser element 11. A first bonding member 141 is formed on the periphery of the lid 110 along the first preliminary bonding film 151 formed around the periphery of the opening 1201 of the first package 21. The first package 21 is heated to a predetermined temperature, the lid 110 is disposed at a predetermined position, and then pressed, so that the opening 1201 above the first package 21 is covered with the lid 110. With such a configuration and manufacturing method, the first semiconductor laser element 11 is hermetically sealed in the first package 21.

[0143] At this time, as shown in FIG. 3, all of the optical components such as the first semiconductor laser element 11, the first optical element 310, and the light-transmitting window 317 are fixed with a bonding member made of an inorganic material.

[0144] In this case, the second bonding member 142, the fourth bonding member 144, and the fifth bonding member 145 used in the first half of the manufacturing process use AuSn solder with a high melting point, for example, between 270°C and 300°C, the third bonding member 143 used to fix the first optical element 310 in the next process uses an even lower melting point, for example, SnSb solder with a melting point between 220°C and 250°C, and the first bonding member 141 used to seal the first package 21 with the lid 110 uses an even lower melting point, for example, SnAgCu solder with a melting point between 210°C and 220°C. With this configuration ,Next In the heat fixation process , parts fixed in the previous process This can prevent the position from changing.

[0145] [How to adjust the FAC lens and SAC lens positions] Next, a method for adjusting the positions of the plurality of FAC lenses and the plurality of SAC lenses will be described with reference to a manufacturing method of the light source module 1.

[0146] First, a manufacturing method will be described in which the first semiconductor laser module 101 and other components are installed in the case 2. As shown in Fig. 1, the first semiconductor laser module 101 is fixed to one stage of the multi-stage base 5 by soldering or the like. Next, in the case 2, the optical fiber 4 is fixed to a predetermined position on the side wall 3, the twelfth optical element 380 is fixed to the base 6, and the seventh optical element 370, which is one reflecting mirror, is fixed to one stage of the multi-stage base 5.

[0147] Subsequently, the positions of the second optical element 320 and the fifth optical element 350 are adjusted and fixed relative to the first semiconductor laser module 101.

[0148] The method for adjusting the positions of the second optical element 320 and the fifth optical element 350 at this time will be described with reference to FIG.

[0149] FIG. 7 is a perspective view for explaining how the positions of the second optical element 320 and the fifth optical element 350 are adjusted.

[0150] First, an ultraviolet curing resin (not shown) is applied to a predetermined position on one stage of the multistage base 5, and the second optical element 320 and the fifth optical element 350 are placed on top of the ultraviolet curing resin. Next, the first semiconductor laser module 101 is operated to emit a predetermined amount of first laser light. At this time, a portion of the first laser light passes through the second optical element 320 and the fifth optical element 350 and is focused on the end face of the optical fiber 4 by the seventh optical element 370 and the twelfth optical element 380, which are one reflecting mirror.

[0151] At this time, the positions of the second optical element 320 and the fifth optical element 350 are adjusted while monitoring the light intensity of the first laser light emitted from the other end face of the optical fiber 4. Specifically, the position of the second optical element 320 is slightly moved in a direction parallel to the optical axis A1 (direction +A or direction −A) or a direction parallel to the second optical axis F1 (direction +F or direction −F), and the position of the fifth optical element 350 is slightly moved in a direction parallel to the optical axis A1 (direction +A or −A) or a direction parallel to the third optical axis S1 (direction +S or −S). At this time, so-called active alignment is performed in which the positions of the second optical element 320 and the fifth optical element 350 are adjusted so that the light intensity of the first laser light emitted from the other end face of the optical fiber 4 is maximized. Thereafter, the second optical element 320 and the fifth optical element 350 are fixed to one stage of the multistage base 5 by irradiating ultraviolet light onto the ultraviolet-curing resin. FIG. 7 shows the shape of the first laser light at this time.

[0152] Although the first semiconductor laser module 101 has been described above, the following applies when a plurality of semiconductor laser modules 100 are installed as shown in FIG.

[0153] First, a plurality of semiconductor laser modules 100 are fixed by solder or the like so as to be arranged side by side on each stage of the multistage base 5. Next, the anode lead electrodes (e.g., anode lead electrodes 1312) and cathode lead electrodes (e.g., cathode lead electrodes 134) of each of the plurality of semiconductor laser modules 100 are connected by metal wires (e.g., metal wires 193), thereby electrically connecting the plurality of semiconductor laser modules 100 in series.

[0154] Subsequently, the positions of the seventh optical element 370, which is a plurality of reflecting mirrors, the twelfth optical element 380, the optical fiber 4, etc. are adjusted and fixed with ultraviolet curing resin, solder, or the like.

[0155] At this point in time, the emission positions and emission directions of the laser beams emitted from each of the semiconductor laser modules 100 do not coincide with the predetermined emission positions and emission directions in the slow axis direction and the fast axis direction.

[0156] Next, a plurality of FAC lenses (e.g., the second optical element 320 and the fourth optical element 340) and a plurality of SAC lenses (e.g., the fifth optical element 350 and the sixth optical element 360) are installed for each of the plurality of semiconductor laser modules 100. While monitoring the light intensity of the laser light emitted from the other end of the optical fiber 4, the positions of the plurality of FAC lenses and the plurality of SAC lenses are adjusted and then fixed. As a result, the laser light from each of the plurality of semiconductor laser modules 100 is efficiently focused at a predetermined location on the end face of one of the optical fibers 4.

[0157] [FA lens and FAC lens design examples] 8A to 8C, examples of a better FA lens and multiple FAC lenses in this embodiment will be described. Note that the description will be made using a first optical element 310, which is an example of an FA lens, and a second optical element 320, which is an example of multiple FAC lenses.

[0158] Fig. 8A is a cross-sectional view of the periphery of a first semiconductor laser module 101. Fig. 8B is a cross-sectional view of the periphery of a first semiconductor laser module 1011 according to a first other example of the first embodiment. Fig. 8C is a cross-sectional view of the periphery of a first semiconductor laser module 1012 according to a second other example of the first embodiment.

[0159] 8A shows a better designed first semiconductor laser module 101. Specifically, the third divergence angle θfd12 is a value within an appropriate range (not less than 9 degrees and not more than 20 degrees).

[0160] 8B is provided with a first optical element 3101 having a power greater in the second optical axis F1 than that of the first optical element 310. This makes it possible to reduce the beam width BFw of the first laser light collimated by the second optical element 3201 in the direction of the second optical axis F1.

[0161] However, the third divergence angle θfd121 is much smaller than the third divergence angle θfd12 of the first semiconductor laser module 101. In this case, a lens with a very long focal length is required as the second optical element 3201. As a result, the movement range of the second optical element 3201 for adjusting the collimation and traveling direction of the first laser beam having the third divergence angle θfd121 becomes very large, making the adjustment difficult.

[0162] 8C is provided with a first optical element 3102 having a smaller power on the second optical axis F1 than the first optical element 310. As a result, the third divergence angle θfd122 is larger than the third divergence angle θfd12 of the first semiconductor laser module 101. In this case, the focal length of the second optical element 3202 is shortened, and therefore the movement range of the position of the second optical element 3202 can be reduced.

[0163] However, even if the second optical element 3202 is brought closer to the first semiconductor laser module 101, the third divergence angle θfd122 of the first laser light is large, so the beam width BFw in the direction of the second optical axis F1 of the first laser light collimated by the second optical element 3202 becomes large. As a result, the size of the optical system of the light source module according to the second example increases.

[0164] Also, regarding the focal length f2 of the plurality of FAC lenses that are the second optical element 320 and the focal length f3 of the plurality of SAC lenses that are the fifth optical element 350, it is only necessary that f2 < f3. The shorter f2 is, the smaller the beam width BFw in the direction of the second optical axis F1 can be made, and it is possible to suppress the increase in the size of the optical system in the light source module 1.

[0165] [Comparative Example] Here, the advantages of the light source module 1 will be described using FIGS. 9A to 10B.

[0166] [[ID=I4]]FIG. 9A is a cross-sectional view around the first semiconductor laser module 1013 according to the first comparative example. In the first semiconductor laser module 10I3 according to the first comparative example, the first optical element 3103 is a lens having the power to collimate on the second optical axis F1 of the first laser light emitted from the first semiconductor laser element 11. And outside the first semiconductor laser module 1013, no optical element having power on the second optical axis F1 is arranged.

[0167] FIG. 9B is a cross-sectional view around the first semiconductor laser module 1014 according to the second comparative example. The first semiconductor laser module 1014 according to the second comparative example does not have a lens having the power to collimate on the second optical axis F1 of the first laser light emitted from the first semiconductor laser element 11 arranged inside the first package. And a second optical element 3204 having power on the second optical axis F1 is arranged near the light-transmitting window 317 outside the first semiconductor laser module 1013.

[0168] Fig. 10A is a schematic diagram showing the periphery of an optical fiber 4 of the light source module 1 according to the first embodiment. Fig. 10B is a schematic diagram showing the periphery of an optical fiber 43 of a light source module according to a first comparative example.

[0169] 10A and 10B, the behavior of the laser light near the twelfth optical elements 380 and 3803 and the coupling efficiency of the laser light at the end faces of the optical fibers 4 and 43, which are the objects, will be described. (a) of Fig. 10A and (a) of Fig. 10B are schematic diagrams showing the periphery of the optical fibers 4 and 43, and (b) of Fig. 10A and (b) of Fig. 10B show distribution diagrams of the light intensity on the second optical axis F1 of the laser light incident on each of the optical fibers 4 and 43.

[0170] 10A and 10B, for simplicity, the explanation will be given using laser light emitted from the first semiconductor laser module 101, the second semiconductor laser module 102, and the third semiconductor laser module among the multiple semiconductor laser modules 100.

[0171] 10A, the laser beams emitted from the first semiconductor laser module 101, the second semiconductor laser module 102, and the third semiconductor laser module, respectively, and reaching the twelfth optical element 380 are referred to as first laser beam L16, second laser beam L26, and third laser beam L36. The laser beams passing through the twelfth optical element 380 are referred to as first laser beam L17, second laser beam L27, and third laser beam L37, respectively. Also, in FIG. 10B, the laser beams emitted from the first semiconductor laser module 1013, the second semiconductor laser module, and the third semiconductor laser module, respectively, and reaching the twelfth optical element 3803 are referred to as first laser beam L16, second laser beam L26, and third laser beam L36. The laser beams passing through the twelfth optical element 3803 are referred to as a first laser beam L17, a second laser beam L27, and a third laser beam L37, respectively. Note that in Figures 10A and 10B, the first laser beams L16 and L17, the second laser beams L26 and L27, and the third laser beams L36 and L37 are indicated by dots.

[0172] 10A, in this embodiment, the laser light emitted from each of the plurality of semiconductor laser modules 100 is collimated by a plurality of FAC lenses (e.g., the second optical element 320 and the fourth optical element 340) and a plurality of SAC lenses (the fifth optical element 350 and the sixth optical element 360), and is incident on the twelfth optical element 380. At this time, the first direction D1 and the second direction D2 of the first laser light and the second laser light coincide with each other.

[0173] As described above, the positions of the FAC lenses and the SAC lenses are easily adjusted.

[0174] Therefore, the laser beams emitted from each of the semiconductor laser modules 100, i.e., the first laser beam L17, the second laser beam L27, and the third laser beam L37, are spatially combined into parallel laser beams whose fast axes are aligned on the same optical axis and are incident on the twelfth optical element 380. Note that the slow axes of the first laser beam L16, the second laser beam L26, and the third laser beam L36 do not overlap on the same optical axis. The laser beams incident on the twelfth optical element 380 are efficiently focused at a predetermined location on the end face of the optical fiber 4. As shown in the light intensity distribution diagram of the optical fiber 4 in FIG. 10A (b), a single-peaked combined light distribution with a large peak intensity and a narrow light distribution width is obtained. That is, the laser beams emitted from each of the semiconductor laser modules 100 are incident on the end face of the optical fiber 4 with high coupling efficiency.

[0175] On the other hand, the light source module of the first comparative example has the same configuration as the light source module 1, mainly except that the second optical element 320 is not arranged and the first optical element 3103 collimates the first laser light in the fast axis direction.

[0176] In the light source module according to the first comparative example shown in FIG. 10B, the laser beams emitted from the multiple semiconductor laser modules are collimated in the fast axis direction by multiple FAC lenses (e.g., first optical element 3103) near the semiconductor laser elements. In this case, the beam width of the first laser beam in the fast axis direction can be narrowed. However, the first optical element 3103, which can adjust the propagation direction of each laser beam emitted from the multiple semiconductor laser modules, is hermetically sealed in the first package. This makes it difficult to adjust the propagation direction of the laser beam by adjusting the position of the first optical element 3103. Furthermore, an optical element corresponding to the second optical element 320 is not disposed outside the first semiconductor laser module 1013. Therefore, when the light source module according to the first comparative example is manufactured, it becomes difficult to adjust the propagation direction of the first laser beam in the fast axis direction after the optical system of the light source module is constructed. In this case, the positions of the multiple FAC lenses, such as the first optical element 3103, are not precisely adjusted with respect to the optical axis A1 from the semiconductor laser elements to the target object. Therefore, in the first comparative example, it is difficult to focus the laser beams emitted from the plurality of semiconductor laser modules at a predetermined position, and therefore it is difficult for all of the first laser beam L17, the second laser beam L27, and the third laser beam L37 in the first comparative example to be efficiently incident on the end face of the optical fiber 43.

[0177] For example, before entering the twelfth optical element 3803 in FIG. 10B, the propagation directions of the first laser beam L17 and the second laser beam L27 are slightly tilted from being parallel to each other. Therefore, the first laser beam L17 reaches a position shifted from a predetermined position on the end face of the optical fiber 43. Furthermore, the collimation of the third laser beam L37 is slightly shifted from the collimation of the second laser beam L27. Therefore, as shown in the light intensity distribution diagram in FIG. 10B (b), a broad light distribution with multiple peaks is obtained. Therefore, the first comparative example results in a light source module with low coupling efficiency with the end face of the optical fiber 43.

[0178] Furthermore, the light source module of the second comparative example has the same configuration as the light source module 1, except that the first optical element 310 is not arranged inside the semiconductor laser module, and the second optical element 3204 is arranged near the translucent window 317.

[0179] In this case, the position of the second optical element 3204 can be adjusted. However, as shown in FIG. 9B, because the divergence angle of the first laser beam in the fast axis direction is large, the beam width in the fast axis direction is already wide when the first laser beam is incident on the second optical element 3204. Therefore, the beam width BFw in the fast axis direction is wide. To spatially combine laser beams with such a large beam width, an optical element larger than the twelfth optical element 380 according to this embodiment is required, or the number of laser beams to be combined must be reduced. For example, if a twelfth optical element 380 of the same size as that of the first embodiment is used, the number of laser beams that can be combined will be reduced.

[0180] [Effects, etc.] As described above, the light source module 1 according to the present embodiment includes the first semiconductor laser module 101 having the hermetically sealed first semiconductor laser element 11 and first optical element 310, the second optical element 320, the second semiconductor laser module 102 having the hermetically sealed second semiconductor laser element 12 and third optical element 330, and the fourth optical element 340. The first laser light passing through the second optical element 320 and the second laser light passing through the fourth optical element 340 are combined. The first optical axis A1 extending from the first semiconductor laser element 11 to the second optical element 320 defines a first direction D1 as the traveling direction of the first laser light. The first laser light has a second optical axis F1 perpendicular to the first direction D1 and a third optical axis S1 perpendicular to the first direction D1 and the second optical axis F1. The first optical element 310 has a power greater in the second optical axis F1 than in the third optical axis S1. The first laser beam L11 reaches the first optical element 310 at a first divergence angle θfd1 in the direction of the second optical axis F1 and a second divergence angle θsd1 in the direction of the third optical axis S1. The first divergence angle θfd1 and the second divergence angle θsd1 satisfy the relationship 90°>θfd1>θsd1>0. The third divergence angle θfd12, which is the divergence angle of the first laser beam L12 emitted from the first optical element 310 in the direction of the second optical axis F1, is reduced from the first divergence angle θfd1. The component of the first laser beam L14 emitted from the second optical element 320 in the direction of the second optical axis F1 is collimated. On the fourth optical axis, which is the optical axis A2 extending from the second semiconductor laser element 12 to the fourth optical element 340, the traveling direction of the second laser beam is defined as a second direction D2. The second laser beam has a fifth optical axis F2 perpendicular to the second direction D2 and a sixth optical axis S2 perpendicular to the second direction D2 and the fifth optical axis F2. The third optical element 330 has a power greater on the fifth optical axis F2 than on the sixth optical axis S2. The second laser beam L21 reaches the third optical element 330 and has a fourth divergence angle θfd2 which is the divergence angle in the direction of the fifth optical axis F1 and a fifth divergence angle θsd2 which is the divergence angle in the direction of the sixth optical axis S2.The fourth divergence angle θfd2 and the fourth divergence angle θsd2 satisfy 90°>θfd2>θsd2>0. A sixth divergence angle θfd22, which is the divergence angle of the second laser beam L22 emitted from the third optical element 330 in the direction of the fifth optical axis F2, is reduced from the third divergence angle θfd2. The component of the second laser beam L24 emitted from the fourth optical element 340 in the direction of the fifth optical axis F2 is collimated.

[0181] This protects the first semiconductor laser element 11 from impurities such as organic substances, thereby preventing impurities such as organic substances from adhering to the light-emitting point of the first semiconductor laser element 11 during operation of the first semiconductor laser element 11 and causing deterioration of the first semiconductor laser element 11. The same applies to the second semiconductor laser element 12.

[0182] Furthermore, for example, before the beam width of the first laser beam L14 becomes too large on the second optical axis F1, the divergence angle of the first laser beam is reduced from the first divergence angle θfd1 to the third divergence angle θfd12. Therefore, the beam width of the first laser beam L14 on the second optical axis F1 at the time of incidence on the second optical element 320 can be narrowed. Therefore, the size of the second optical element 320 can be reduced. That is, the size of the optical system of the light source module 1 can be reduced. The same applies to the second semiconductor laser element 12.

[0183] Furthermore, as described above, the positions of the multiple FAC lenses are easily adjusted. Therefore, the first laser beam and the second laser beam emitted from the multiple FAC lenses pass through, for example, the twelfth optical element 380 and are efficiently focused at a predetermined location on the end face of the optical fiber 4. In other words, the laser beams emitted from the multiple semiconductor laser modules 100 can be incident on the target (the end face of the optical fiber 4) with higher coupling efficiency.

[0184] In summary, a compact light source module 1 is realized that suppresses deterioration of the first and second semiconductor laser elements 11 and 12 and achieves high coupling efficiency of the laser light in the target object.

[0185] Furthermore, for example, in the light source module 1 according to this embodiment, in the combined first laser light and second laser light, the first direction D1 and the second direction D2 coincide with each other, and the second optical axis F1 and the fifth optical axis F2 coincide with each other.

[0186] As a result, the laser beams emitted from each of the semiconductor laser modules 100, i.e., the first laser beam and the second laser beam, travel as parallel, spatially combined laser beams whose fast axes overlap the same optical axis. Therefore, the first laser beam and the second laser beam can be incident on the target (the end face of the optical fiber 4) with higher coupling efficiency.

[0187] Furthermore, for example, in the light source module 1 according to this embodiment, the first semiconductor laser module 101 has a light-transmitting window 317 through which the first laser light passes and which extracts the first laser light to the outside of the first semiconductor laser module 101, a first package 21 including a frame 120 having a plate-shaped bottom 130 and an opening 1201 (first opening) in the center, and a lid 110. The first semiconductor laser element 11 is disposed in the opening 1201, and the lid 110 covers the opening 1201 from above, and the first semiconductor laser element 11 is hermetically sealed by the light-transmitting window 317, the first package 21, and the lid 110.

[0188] As a result, the first semiconductor laser element 11 is protected from impurities such as organic substances from outside the first package 21 while receiving power from outside the first package 21. Therefore, it is possible to prevent deterioration of the first semiconductor laser element 11 due to impurities such as organic substances adhering to the light-emitting point of the first semiconductor laser element 11 during operation of the first semiconductor laser element 11. The same applies to the second semiconductor laser element 12.

[0189] Furthermore, for example, in the light source module 1 according to this embodiment, the frame body 120 is provided with an opening 170 (second opening) that spatially connects the opening 1201 with the outside of the first semiconductor laser module 101, and the light-transmitting window 317 covers the opening 170.

[0190] This allows the first semiconductor laser element 11 to emit the first laser light toward the light-transmitting window 317 that covers the opening 170 (second opening).

[0191] Furthermore, for example, in the light source module 1 according to this embodiment, the frame 120 has an anode electrode 132 and a cathode electrode 135 that electrically connect the inside of the opening 1201 to the outside of the first semiconductor laser module 101. At least a portion of the frame 120 is made of an insulator. The anode electrode 132, the cathode electrode 135, and the bottom 130 are electrically insulated from each other.

[0192] By providing the anode electrode 132 and the cathode electrode 135 inside the frame 120, the degree of freedom in designing the first semiconductor laser module 101 is improved.

[0193] Furthermore, for example, in the light source module 1 according to the present embodiment, the frame 120 has an anode output electrode 131 that connects the anode electrode 132 to the outside of the first semiconductor laser module 101, and a cathode output electrode 134 that connects the cathode electrode 135 to the outside of the first semiconductor laser module 101. The anode output electrode 131 and the cathode output electrode 134 are disposed on the upper surface of the frame 120.

[0194] As a result, the anode lead electrode 131 and the cathode lead electrode 134 are provided at the above locations, and the design freedom of the first semiconductor laser module 101 is improved.

[0195] Furthermore, for example, in the light source module 1 according to this embodiment, the anode lead electrode 131 and the cathode lead electrode 134 are disposed at positions facing the light-transmitting window 317 with the opening 1201 interposed therebetween.

[0196] As a result, the anode lead electrode 131 and the cathode lead electrode 134 are provided at the above locations, and the design freedom of the first semiconductor laser module 101 is improved.

[0197] Furthermore, for example, in the light source module 1 according to the present embodiment, the first semiconductor laser module 101 and the second semiconductor laser module 102 are arranged side by side in the direction of the third optical axis S1.

[0198] This improves the degree of freedom in designing the arrangement of the first semiconductor laser module 101 and the second semiconductor laser module 102.

[0199] Furthermore, for example, in the light source module 1 according to this embodiment, the cathode extraction electrode 134 of the first semiconductor laser module 101 and the anode extraction electrode 1312 of the second semiconductor laser module 102 are electrically connected by a metal wire 193.

[0200] This allows adjacent semiconductor laser modules 100 in the light source module 1 to be easily connected electrically in series.

[0201] Furthermore, for example, in the light source module 1 according to the present embodiment, at least a portion of the first optical element 310 and at least a portion of the third optical element 330 are fixed together by a bonding member made of an inorganic material.

[0202] This makes it difficult for impurities such as organic substances to deposit around the first semiconductor laser element 11. This makes it possible to suppress deterioration of the first semiconductor laser element 11 due to the adhesion of impurities such as organic substances. The same applies to the second semiconductor laser element 12.

[0203] In the light source module 1 according to the present embodiment, the second optical element 320 is a lens having a power axis and a non-power axis perpendicular to the power axis, and having a cylindrical surface convex to the power axis, and the power axis is arranged parallel to the second optical axis F1. 340 is a lens having a power axis and a non-power axis perpendicular to the power axis, and having a convex cylindrical surface on the power axis, and the power axis is arranged parallel to the fifth optical axis F2.

[0204] This allows the second optical element 320 and the fourth optical element 340 (plurality of FAC lenses) to easily collimate the fast axis direction component of the laser light incident thereon.

[0205] Furthermore, for example, the light source module 1 according to the present embodiment includes a fifth optical element 350 and a sixth optical element 360. A component of the first laser light L15 that has passed through the fifth optical element 350 in the direction of the third optical axis S1 is collimated. A component of the second laser light L25 that has passed through the sixth optical element 360 in the direction of the sixth optical axis S2 is collimated. The first laser light L15 that has passed through the fifth optical element 350 and the second laser light L25 that has passed through the sixth optical element 360 are incident on an object (an end surface of the optical fiber 4).

[0206] As a result, the fifth optical element 350 is located outside the first package 21, and therefore it is easy to adjust the position of the fifth optical element 350. Therefore, the first laser light is more efficiently focused at a predetermined location on the end face of the optical fiber 4, which is the target. Furthermore, since the same is true for the second laser light, the first laser light and the second laser light can be incident on the target (the end face of the optical fiber 4) with higher coupling efficiency.

[0207] Furthermore, for example, in the light source module 1 according to the present embodiment, the beam width of the second optical axis F1 of the first laser beam L14 that has passed through the second optical element 320 is narrower than the beam width of the third optical axis S1 of the first laser beam L15 that has passed through the fifth optical element 350. The beam width of the fifth optical axis F2 of the second laser beam L24 that has passed through the fourth optical element 340 is narrower than the beam width of the sixth optical axis S2 of the second laser beam L25 that has passed through the sixth optical element 360.

[0208] This narrows the beam width BFw of the first laser light L15 that has passed through the fifth optical element 350 along the second optical axis F1, allowing the laser light beams from other semiconductor laser modules 100 to be aligned in the direction of the second optical axis F1. This therefore allows the size of the optical component (e.g., the twelfth optical element 380) onto which the first laser light L15 that has passed through the fifth optical element is incident to be reduced. The same applies to the second laser light. In other words, the size of the optical system of the light source module 1 can be reduced.

[0209] Furthermore, for example, in the light source module 1 according to the present embodiment, the first optical element 310 includes a lens having a power axis and a non-power axis perpendicular to the power axis, and having a convex or concave cylindrical surface on the power axis. The power axis is arranged parallel to the second optical axis F1. The third optical element 330 includes a lens having a power axis and a non-power axis perpendicular to the power axis, and having a convex or concave cylindrical surface on the power axis. The power axis is arranged parallel to the fifth optical axis F2.

[0210] This allows the first optical element 310 to narrow the divergence angle on the second optical axis F1. The same applies to the third optical element 330.

[0211] Furthermore, for example, the light source module 1 according to this embodiment has a seventh optical element 370 onto which the first laser light L15 that has passed through the fifth optical element 350 and the second laser light L25 that has passed through the sixth optical element 360 are incident.

[0212] This allows both the first laser light and the second laser light to be controlled, which makes it easier to combine the first laser light and the second laser light, and the first laser light and the second laser light are incident on the target (the end face of the optical fiber 4) with higher combining efficiency.

[0213] Furthermore, for example, in the light source module 1 according to the present embodiment, the fifth optical element 350 is a lens having a power axis and a non-power axis perpendicular to the power axis, and having a convex cylindrical surface on the power axis. The power axis is disposed parallel to the third optical axis S1. The sixth optical element 360 is a lens having a power axis and a non-power axis perpendicular to the power axis, and having a convex cylindrical surface on the power axis. The power axis is disposed parallel to the sixth optical axis S2.

[0214] This allows the fifth optical element 350 and the sixth optical element 360 (plurality of SAC lenses) to easily collimate the component of the laser light incident thereon in the slow axis direction.

[0215] Also, for example, in the light source module 1 according to this embodiment, the second optical element 320 is disposed between the first optical element 310 and the fifth optical element 350, and the fourth optical element 340 is disposed between the third optical element 330 and the sixth optical element 360.

[0216] This allows the beam widths of the fast axes of the first laser light and the second laser light to be narrower, thereby reducing the size of the optical system of the light source module 1. As a result, a compact light source module 1 is realized.

[0217] Furthermore, for example, in the light source module 1 according to the present embodiment, the seventh optical element 370 is made up of a plurality of reflecting mirrors.

[0218] This allows the laser light collimated by the plurality of FAC lenses and the plurality of SAC lenses to be reflected and the direction of the laser light to be deflected by 90°.

[0219] Furthermore, for example, in the light source module 1 according to this embodiment, the first laser light and the second laser light become parallel to each other after emitting from the seventh optical element 370, and the second optical axis F1 and the fifth optical axis F2 overlap, while the third optical axis S1 and the sixth optical axis S2 do not overlap.

[0220] Since the first laser light and the second laser light become parallel lights and the second optical axis F1 and the fifth optical axis F2 overlap, the first laser light and the second laser light can be incident on the target (the end face of the optical fiber 4) with higher coupling efficiency.

[0221] Furthermore, for example, the light source module 1 according to the present embodiment includes a twelfth optical element 380 onto which the first laser light L17 and the second laser light L27 are incident after passing through the seventh optical element 370. The first laser light and the second laser light after passing through the twelfth optical element 380 are focused on an object (the end face of the optical fiber 4).

[0222] By providing such a twelfth optical element 380, the first laser light and the second laser light can be incident on the target (the end face of the optical fiber 4) with higher coupling efficiency.

[0223] In addition, for example, in the light source module 1 according to the present embodiment, the target object is the end face of the optical fiber 4.

[0224] This allows the size of the target to be reduced, thereby realizing a compact light source module 1.

[0225] Furthermore, for example, in light source module 1 according to the present embodiment, first semiconductor laser element 11 is a nitride-based semiconductor laser element, and second semiconductor laser element 12 is a nitride-based semiconductor laser element.

[0226] Generally, nitride semiconductor laser elements are prone to deterioration due to the adhesion of impurities such as organic substances. However, by adopting the above configuration, in light source module 1 having nitride semiconductor laser elements as first semiconductor laser element 11 and second semiconductor laser element 12, deterioration of first semiconductor laser element 11 and second semiconductor laser element 12 can be suppressed.

[0227] (Second embodiment) Next, a second embodiment will be described, focusing on the differences from the first embodiment, and explanation of commonalities will be omitted or simplified.

[0228] [composition] First, the configurations of the light source module and the semiconductor laser module according to the second embodiment will be described with reference to FIGS.

[0229] Fig. 11 is a perspective view showing the configuration of a light source module 1a according to the second embodiment. More specifically, Fig. 11(a) is a perspective view showing the overall configuration of the light source module 1a. Fig. 11(b) is an enlarged perspective view of the semiconductor laser module 100a. In Fig. 11, part of the side wall 3 is not shown for the sake of explanation. Fig. 13 is an exploded perspective view for explaining the configuration of a first semiconductor laser module 101a included in the light source module 1a.

[0230] The light source module 1a has the same configuration as the light source module 1 according to the first embodiment, except for the following two main points: Specifically, the two points are the configuration of the semiconductor laser module 100a mounted on the light source module 1a, and the configuration of the FAC lens that collimates the fast axis component of the laser light emitted from the semiconductor laser module 100a.

[0231] In this embodiment, six semiconductor laser modules 100a are provided, as in the first embodiment. For ease of identification, they may be referred to as first to sixth semiconductor laser modules, and further referred to as a first semiconductor laser module 101a and a second semiconductor laser module 102a. Of the multiple semiconductor laser modules 100a, the second to sixth semiconductor laser modules have the same configuration as the first semiconductor laser module 101a. Here, the first semiconductor laser module 101a will be used for explanation.

[0232] Specifically, the first optical element 310a of the first semiconductor laser module 101a is composed of an eighth optical element 318a and a ninth optical element 319a. The third optical element 330a of the second semiconductor laser module 102a is composed of a tenth optical element 338a and an eleventh optical element 339a. In this embodiment, the ninth optical element 319a and the light-transmitting window 317 of the first semiconductor laser module 101a are integrally molded. In other words, the ninth optical element 319a functions as a light-transmitting window that extracts the first laser light to the outside of the first semiconductor laser module 101a. Furthermore, the eleventh optical element 339a and the light-transmitting window 337 of the second semiconductor laser module 102a are integrally molded. In other words, the eleventh optical element 339a functions as a light-transmitting window for extracting the second laser beam to the outside of the first semiconductor laser module 101a. Furthermore, the laser beams emitted from the first semiconductor laser module 101a and the second semiconductor laser module 102a have a negative divergence angle in the fast axis direction, that is, they emit converging laser beams.

[0233] The second optical element 320a and the fourth optical element 340a collimate the fast axis direction of the laser light whose fast axis direction is converged.

[0234] This will be explained in more detail below.

[0235] The first package 21a of the semiconductor laser module 100a is composed of a bottom 130 and a frame 120a, but the frame 120a differs from that of the first embodiment. The frame 120a is composed of a first frame 121a and a second frame 122a. The first frame 121a is made of an insulating material and has an opening that spatially connects the outside and inside of the first semiconductor laser module 101a. This opening is formed by a notch in a first direction D1. Metal films that respectively constitute the anode electrode 132 and the anode extraction electrode 131, and metal films that respectively constitute the cathode electrode 135 and the cathode extraction electrode 134 are formed on the upper surface of the first frame 121a. The second frame portion 122a is attached to the metal film side of the first frame portion 121a so that the anode electrode 132 and the cathode electrode 135 are disposed inside the frame and the anode lead-out electrode 131 and the cathode lead-out electrode 134 are disposed outside the frame. With this structure, the first package 21a does not require electrodes such as via electrodes to connect different frame portions (for example, the second frame portion 122 and the third frame portion 123 in the first embodiment). Furthermore, the cutout of the first frame portion 121a is sandwiched between the bottom portion 130 and the second frame portion 122a to form an opening 170 on the side surface. With the above-mentioned structure, the first package 21a can be more easily configured than the first package 21.

[0236] The eighth optical element 318a and the ninth optical element 319a constituting the first optical element 310a, which is an FA lens, are both lenses having convex cylindrical surfaces. As an example, they are plano-convex cylindrical lenses made of inorganic glass, with one flat surface and the other convex surface, and anti-reflection coatings formed on the entrance and exit surfaces. In this case, within the first semiconductor laser module 101a, the convex surface of the eighth optical element 318a faces the laser beam exit side, and the convex surface of the ninth optical element 319a faces the laser beam entrance side. The eighth and ninth optical elements 318a and 319a are arranged so that their power axes are parallel to the second optical axis F1 of the first laser beam and their non-power axes are parallel to the third optical axis S1. The eighth and ninth optical elements 318a and 319a have cylindrical surfaces that are convex in the direction of their power axes, i.e., convex cylindrical surfaces. Similarly, the third optical element 330a is composed of a tenth optical element 338a and an eleventh optical element 339a, which are lenses having convex cylindrical surfaces, and is disposed in the second semiconductor laser module 102a.

[0237] The ninth optical element 319a and the eleventh optical element 339a are molded integrally with the light-transmitting windows of the first semiconductor laser module 101a and the second semiconductor laser module 102a, respectively. The ninth optical element 319a is attached to the frame 171 using low-melting-point glass or the like, and then covers the opening 170 of the first package 21a of the first semiconductor laser module 101a. The lid 110 is attached to cover the opening of the second frame portion 122a of the first package 21a. The frame 171 and the lid 110 can be made of an opaque material such as ceramic or metal. Therefore, the first semiconductor laser element 11 can be more easily hermetically sealed by the ninth optical element 319a, the frame 171, and the lid 110. The second optical element 320a and the fourth optical element 340a, which are multiple FAC lenses, are lenses having a concave cylindrical surface. As an example, the lens is a plano-concave cylindrical lens made of inorganic glass, with one flat surface and the other concave surface, and has anti-reflection coatings formed on the entrance and exit surfaces. The second optical element 320a is positioned so that its power axis is parallel to the second optical axis F1 of the first laser beam and its non-power axis is parallel to the third optical axis S1. The second and fourth optical elements 320a and 340a have cylindrical surfaces that are concavely curved in the power axis, i.e., concave cylindrical surfaces. Furthermore, the twelfth optical element 380a is a condenser lens, as in the first embodiment.

[0238] [Behavior of laser light] Next, the laser beams emitted from the plurality of semiconductor laser modules 100a will be described. Here, the first semiconductor laser module 101a will be used as an example, but the other semiconductor laser modules 100a also exhibit similar laser beam behavior.

[0239] In this embodiment, the divergence angle θfd in the fast axis direction of the laser light that has passed through the FA lens (for example, the first optical element 310a) is a negative value, that is, the laser light becomes converging. Therefore, it is described that the fast axis direction of the laser light converges at a convergence angle θcf expressed as θcf=-θfd.

[0240] Fig. 12A is a schematic diagram showing the optical system of the first semiconductor laser module 101a. Specifically, Fig. 12A(a) is a plan view, and Fig. 12A(b) is a cross-sectional view showing a cut surface taken along line bb in Fig. 12A(a).

[0241] FIG. 12B is a schematic diagram illustrating the convergence angle according to the second embodiment. Similar to the divergence angle, the convergence angle of the first laser beam is determined when the light intensity is 1 / (e 2 12B shows the angle between the optical axis A1 and the dashed line at which the value of .gtoreq..times ...

[0242] The first laser beam L11, before reaching the first optical element 310a, is emitted from the light-emitting point of the first semiconductor laser element 11 as laser beam having a first divergence angle θfd1 in the direction of the second optical axis F1 and a second divergence angle θsd1 in the direction of the third optical axis S1. At this time, the first divergence angle θfd1 and the second divergence angle θsd1 have values ​​similar to those in the first embodiment. Then, by passing through the first optical element 310a, the third divergence angle θfd12 in the direction of the second optical axis F1 decreases to a negative value, and the first laser beam L11 travels as laser beam converging at a first convergence angle θfc1 expressed as θcf1=-θfd12>0. On the other hand, the first optical element 310a does not have power in the direction of the third optical axis S1 of the first laser beam L11, and therefore the first laser beam L11 travels while diverging at the same second divergence angle θsd1 as before it was incident.

[0243] In this case, the first optical element 310a is composed of two lenses, an eighth optical element 318a and a ninth optical element 319a, each of which has a power. Therefore, by using two lenses with low power, it is easy to significantly reduce the third divergence angle θfd12. In this case, more preferably, to facilitate lens design, the divergence angle of the first laser beam L11 in the direction of the second optical axis F1 is set to an angle at which the first laser beam L11 is made parallel by the eighth optical element 318a and converged by the ninth optical element 319a.

[0244] Next, the first laser beam L13 passes through the second optical element 320a, whereby the first laser beam is collimated. Therefore, the first laser beam L14 that has passed through the second optical element 320a can be a laser beam with a narrow beam width BFwa in the fast axis direction. Specifically, for example, the first laser beam according to this embodiment is a laser beam with a narrower beam width in the fast axis direction than that of the first embodiment.

[0245] Furthermore, in this embodiment, it is designed to satisfy θfd1>θfc1>0. That is, it is designed so that the absolute value of the convergence angle (divergence angle) of the laser beam after passing through first optical element 310a is smaller than the absolute value of the divergence angle of the first laser beam emitted from first semiconductor laser element 11.

[0246] In this way, by reducing the absolute value of the first convergence angle θfc1, the focusing position of the first laser light is less likely to fluctuate sensitively even when the positions of the second optical element 320a and the fifth optical element 350 are adjusted. In other words, it is possible to reduce the sensitivity of the adjustment of the positions of the second optical element 320a and the fifth optical element 350. That is, the positions of the second optical element 320a and the fifth optical element 350 are easily adjusted.

[0247] As described above, the second optical element 320a is a lens having a concave cylindrical surface. Therefore, the first laser light emitted from the ninth optical element 319a is incident on the second optical element 320a in a state where the second optical axis F1 direction is converged, thereby enabling the component of the first laser light passing through the second optical element 320a in the second optical axis F1 direction to be collimated. Therefore, when the first laser light emitted from the ninth optical element 319a is configured as light whose second optical axis F1 component is converged, it is possible to use a lens with a long focal length as the first optical element 310a (the eighth optical element 318a and the ninth optical element 319a), or to shorten the distance between the second optical element 320a and the first package 21a. This allows for a compact light source module 1a to be realized.

[0248] The first laser light is incident on the seventh optical element 370.

[0249] [Method of manufacturing semiconductor laser module and light source module] Furthermore, a manufacturing method for the semiconductor laser module 100a and the light source module 1a will be described using Figures 11, 13, and 14. Figure 14 is a perspective view for explaining a method for adjusting the positions of the second optical element 320a and the fifth optical element 350. Here, the first semiconductor laser module 101a will be used as an example for the description, but the other semiconductor laser modules 100a are also manufactured in a similar manner. Also, descriptions that overlap with the manufacturing method for the first semiconductor laser module 101 according to the first embodiment will be omitted. Also, the metal wires in the first semiconductor laser module 101a will be omitted to avoid redundancy.

[0250] First, the submount 50 on which the first semiconductor laser element 11 is mounted is fixed at a predetermined position on the semiconductor laser element mounting surface within the opening of the first package 21a. The eighth optical element 318a is then fixed in the same manner. The ninth optical element 319a is then fixed to a frame 171 made of metal or ceramic and having a frame-like shape using low-melting-point inorganic glass or the like. The frame 171 with the ninth optical element 319a attached is then fixed to the opening 170 of the first package 21a. After the first semiconductor laser element 11 and the first package 21a are wired with metal wires (not shown), the lid 110 is fixed to the second frame 122a and hermetically sealed, thereby manufacturing the first semiconductor laser module 101a. At this time, the frame 171 and the lid 110 are sealed with a bonding preparatory film and a bonding material formed on the first package 21a, as in the first embodiment.

[0251] 11, the first semiconductor laser module 101a is attached to the light source module 1a, and the anode lead electrode 131 and the cathode lead electrode 134 are electrically connected with a metal wire (not shown) so that power can be supplied to the semiconductor laser element. Then, as shown in FIG. 14, the second optical element 320a and the fifth optical element 350 are adjusted and fixed in position, as in the first embodiment. At this time, the second optical element 320a is a lens having a concave cylindrical surface, but the position adjustment method is the same as in the first embodiment.

[0252] [Advantages over the first embodiment] Here, the advantages of the light source module 1a according to this embodiment will be described with reference to FIGS. 7, 14 and 15. FIG.

[0253] Fig. 15 is a diagram showing the incident light amount distribution of the laser light emitted from the seventh optical elements 370 and 370a according to the first and second embodiments and before reaching the twelfth optical elements 380 and 380a. More specifically, Fig. 15(a) is a diagram showing the incident light amount distribution in the first embodiment as shown in the optical system of Fig. 7, and Fig. 15(b) is a diagram showing the incident light amount distribution according to the second embodiment as shown in Fig. 14.

[0254] 15(a), of the laser beams incident on the twelfth optical element 380 according to the first embodiment, the laser beams emitted from the first to sixth semiconductor laser modules are designated as first to sixth laser beams L16, L26, L36, L46, L56, and L66. Similarly, as shown in FIG. 15(b), of the laser beams incident on the twelfth optical element 380a according to the second embodiment, the laser beams emitted from the first to sixth semiconductor laser modules are designated as first to sixth laser beams L16a, L26a, L36a, L46a, L56a, and L66a. In this case, the optical systems in the direction of the laser beam slow axis are designed identically.

[0255] As described above, compared to the first embodiment, the first laser beam emitted from the first semiconductor laser module 101a according to this embodiment has a beam width BFwa in the fast axis direction narrower than the beam width BFw of the first embodiment, and is directed toward the twelfth optical element 380a. Therefore, the same is true for the laser beams emitted from each of the multiple semiconductor laser modules 100a.

[0256] Therefore, as shown in FIG. 15(b), by reducing the height of the steps of the multi-stage base 5 on which the multiple semiconductor laser modules 100a are installed, the first to sixth laser beams L16a, L26a, L36a, L46a, L56a, and L66a can be multiplexed with higher density in the fast axis direction. Therefore, as shown by comparing FIGS. 15(a) and 15(b), in this embodiment, a smaller twelfth optical element 380a can be used compared to the first embodiment. Furthermore, even when such a twelfth optical element 380a is used, multiple laser beams can be efficiently combined. Therefore, a light source module 1a having a small size, particularly in the height direction (direction of the second optical axis F1), can be realized.

[0257] [Effects, etc.] As described above, in the light source module 1a according to the present embodiment, at least a part of the first optical element 310a (here, the ninth optical element 319a) and the light-transmitting window 317 are molded integrally.

[0258] This allows the number of components constituting the first semiconductor laser module 101b to be reduced.

[0259] Furthermore, for example, in the light source module 1a according to the present embodiment, the first laser beam that has passed through the first optical element 310a has a component of the second optical axis F1 that converges toward the second optical element 320a. The second laser beam that has passed through the third optical element 330a has a component of the fifth optical axis F2 that converges toward the fourth optical element 340a.

[0260] In this way, by converging the first laser light that has passed through the first optical element 310a, even if the positions of the second optical element 320a and the fifth optical element 350 are adjusted, the focusing position of the first laser light is less likely to fluctuate sensitively. In other words, the positions of the second optical element 320a and the fifth optical element 350 are easily adjusted. The same is true for the second laser light. Therefore, the laser light emitted from each of the multiple semiconductor laser modules 100a can be incident on the target (the end face of the optical fiber 4) with higher coupling efficiency.

[0261] Furthermore, for example, in the light source module 1a according to the present embodiment, for the first laser beam that has passed through the first optical element 310a, the third divergence angle θfd12, which is a divergence angle in the direction of the second optical axis F1, satisfies θfc1=-θfd12>0 as the first convergence angle θfc1. For the second laser beam that has passed through the third optical element 330a, the sixth divergence angle θfd22, which is a divergence angle in the direction of the fifth optical axis F2, satisfies θfc2=-θfd22>0 as the second convergence angle θfc2. The first divergence angle θfd1, the first convergence angle θfc1, the fourth divergence angle θfd2, and the second convergence angle θfc2 all satisfy θfd1>θfc1>0 and θfd2>θfc2>0.

[0262] In this way, by making the first convergence angle θfc1 sufficiently small, the focusing position of the first laser light becomes less susceptible to fluctuations even when the positions of the second optical element 320a and the fifth optical element 350 are adjusted. In other words, the positions of the second optical element 320a and the fifth optical element 350 are more easily adjusted. The same applies to the second laser light. Therefore, the laser light emitted from each of the multiple semiconductor laser modules 100a can be incident on the target (the end face of the optical fiber 4) with higher coupling efficiency.

[0263] Furthermore, for example, in the light source module 1a according to this embodiment, the second optical element 320a is a lens having a power axis and a non-power axis perpendicular to the power axis, with the power axis having a concave cylindrical surface. The power axis is disposed parallel to the second optical axis F1. The fourth optical element 340a is a lens having a power axis and a non-power axis perpendicular to the power axis, with the power axis having a concave cylindrical surface. The power axis is disposed parallel to the fifth optical axis F2.

[0264] As a result, the first laser light emitted from the first optical element 310a (here, the ninth optical element 319a) is incident on the second optical element 320a in a state where the second optical axis F1 direction is converged, and the component of the first laser light that has passed through the second optical element 320a in the second optical axis F1 direction can be collimated. The same applies to the second laser light. Therefore, a compact light source module 1a can be realized.

[0265] In addition, for example, in the light source module 1a according to the present embodiment, the first optical element 310a is composed of an eighth optical element 318a and a ninth optical element 319a, and the third optical element 330a is composed of a tenth optical element 338a and an eleventh optical element 339a.

[0266] As a result, for example, by combining eighth optical element 318a and ninth optical element 319a, which are lenses with small curvatures, it is possible to obtain the same effect as when one convex lens with large curvature is used.

[0267] Furthermore, for example, in the light source module 1a according to this embodiment, the eighth optical element 318a is a lens having a power axis and a non-power axis perpendicular to the power axis, and having a convex cylindrical surface on the power axis. The power axis is arranged parallel to the second optical axis F1. The ninth optical element 319a is a lens having a power axis and a non-power axis perpendicular to the power axis, and having a convex cylindrical surface on the power axis. The power axis is arranged parallel to the second optical axis F1. The tenth optical element 338a is a lens having a power axis and a non-power axis perpendicular to the power axis, and having a convex cylindrical surface on the power axis. The power axis is arranged parallel to the third optical axis S1. The eleventh optical element 339a is a lens having a power axis and a non-power axis perpendicular to the power axis, and having a convex cylindrical surface on the power axis. The power axis is arranged parallel to the third optical axis S1.

[0268] As a result, the first optical element 310a is composed of two lenses, the eighth optical element 318a and the ninth optical element 319a, each of which has a power. Therefore, by using two lenses with low power, it is easy to significantly reduce the third divergence angle θfd12. The same is true for the third optical element 330a.

[0269] The following describes first to tenth modifications of the second embodiment. The following description will focus on differences from the second embodiment and omit or simplify the description of commonalities.

[0270] (First modified example of the second embodiment) FIG. 16 is a cross-sectional view showing the configuration of a first semiconductor laser module 101b included in a light source module according to a first modification of the second embodiment.

[0271] The light source module according to the first modification of the second embodiment has the same configuration as the light source module 1a according to the second embodiment, mainly except for the following one point: Specifically, the one point is that the ninth optical element 319b, which is a part of the first optical element 310b, is integrated with the frame 171 shown in the second embodiment.

[0272] This allows the number of components constituting the first semiconductor laser module 101b to be reduced.

[0273] FIG. 17 is a schematic diagram showing the configuration and manufacturing method of a first semiconductor laser module 101b according to a first modification of the second embodiment.

[0274] This modification describes a case where the first package 21 is equivalent to that of the first embodiment. The ninth optical element 319b is a plano-convex cylindrical lens, but the convex portion of the ninth optical element 319b is formed only in the center of the ninth optical element 319b, with the peripheral portion being flat. A base metal film (not shown) and a fourth bonding member 144, such as AuSn solder, are formed on the peripheral portion of the ninth optical element 319b. The ninth optical element 319b can be easily fixed into the opening 170 of the frame 120 by pressing and heating the ninth optical element 319b.

[0275] (Second Modification of the Second Embodiment) FIG. 18 is a cross-sectional view showing the configuration of a first semiconductor laser module 101c included in a light source module according to a second modification of the second embodiment.

[0276] The light source module according to the second modification of the second embodiment has the same configuration as the light source module 1a according to the second embodiment, except for the following two main points: a ninth optical element 319c, which is a part of the first optical element 310c, is hermetically sealed in the first package 21c, and a light-transmitting window 317 is provided to close the opening 170.

[0277] The ninth optical element 319c is provided above the second support member 162. Like the ninth optical element 319a according to the second embodiment, the ninth optical element 319c is a lens having a convex cylindrical surface and is disposed so that its power axis is parallel to the second optical axis F1. The second support member 162 is provided above the bottom 130 and is used to adjust the position of the ninth optical element 319c relative to the first laser beam. The light-transmitting window 317 has the same configuration as the light-transmitting window 317 according to the first embodiment.

[0278] This improves the degree of freedom in designing the optical system that constitutes the first semiconductor laser module 101c.

[0279] FIG. 19 is a schematic view showing a method for manufacturing a first semiconductor laser module 101c according to a second modification of the second embodiment.

[0280] In this modification, after the eighth optical element 318a is fixed, the ninth optical element 319c is fixed at a predetermined height and distance from the first semiconductor laser element 11 using the second support member 162. Then, a light-transmitting window 317 is fixed to the opening 170 of the frame body 120.

[0281] (Third Modification of the Second Embodiment) Fig. 20 is a schematic diagram showing an optical system of a first semiconductor laser module 101d included in a light source module 1d according to a third modification of the second embodiment. Specifically, Fig. 20(a) is a plan view, and Fig. 20(b) is a cross-sectional view showing a cut surface taken along line bb in Fig. 20(a).

[0282] The light source module 1d according to the third modified example of the second embodiment has the same configuration as the light source module according to the second modified example of the second embodiment, mainly except for the following one point: Specifically, the first optical element 310d is provided, which is an integral unit of the eighth optical element 318a and the ninth optical element 319c according to the second modified example of the second embodiment.

[0283] This allows the number of components constituting the first semiconductor laser module 101d to be reduced.

[0284] Fig. 21A is a schematic diagram showing an example of a manufacturing method for a first semiconductor laser module 101d according to a third modified example of the second embodiment. Fig. 21B is a schematic diagram showing another example of a manufacturing method for a first semiconductor laser module 101d according to the third modified example of the second embodiment. More specifically, (a) of Fig. 21B shows a process for manufacturing a frame 120 and a bottom 130, and (b) of Fig. 21B shows a process for manufacturing the first semiconductor laser module 101d.

[0285] A first metal film 137 and a second bonding member 142 are formed on the surface of the submount 50, but no second metal film is formed. Instead, a metal wire 190d connected to the substrate side of the first semiconductor laser element 11 is directly connected to the cathode electrode 135 of the first package 21d.

[0286] The first package 21d has a different structure from the first package 21. Specifically, the first package 21d has a configuration in which the first frame portion 121a and the bottom portion 130 of the first package 21 are integrated together. In the first package 21d, an opening 170 is formed in a portion surrounded by the bottom portion 130, the second frame portion 122b, and the third frame portion 123c.

[0287] (Fourth Modification of the Second Embodiment) Fig. 22 is a schematic diagram showing an optical system of a first semiconductor laser module 101e included in a light source module 1e according to a fourth modification of the second embodiment. Specifically, Fig. 22(a) is a plan view, and Fig. 22(b) is a cross-sectional view showing a cut surface taken along line bb in Fig. 22(a).

[0288] The light source module 1e has the same configuration as the light source module 1a according to the second embodiment, except for one feature: Specifically, the light source module 1e includes a first optical element 310e that is an integral part of the eighth optical element 318a and the ninth optical element 319a according to the second embodiment.

[0289] 22, the first optical element 310e is a lens having a convex cylindrical surface, and is disposed so that its power axis is parallel to the second optical axis F1. The first optical element 310e and the light-transmitting window 317 are integrally molded. A portion of the first optical element 310e is hermetically sealed in the first package 21. More specifically, the portion of the first optical element 310e is the incident surface of the first optical element 310e on which the first laser light is incident.

[0290] (Fifth Modification of the Second Embodiment) FIG. 23 is a cross-sectional view showing an optical system of a first semiconductor laser module 101f included in a light source module 1f according to a fifth modification of the second embodiment.

[0291] The light source module 1f has the same configuration as the light source module 1a according to the second embodiment, mainly except for the following two points: an eighth optical element 318f, which is part of the first optical element 310f, has a concave mirror surface, and a ninth optical element 319f, which is part of the first optical element 310f, has a convex surface facing outward from the first package 21.

[0292] In this modification, the eighth optical element 318f has a reflective concave mirror surface. The concave mirror surface is, for example, a parabolic surface. The eighth optical element 318f is disposed to face the light-emitting point 60 of the first semiconductor laser element 11. The eighth optical element 318f deflects the direction of the laser light emitted from the light-emitting point 60 at a first divergence angle θfd1 in the fast axis direction by 90°, while simultaneously reducing the divergence angle in the fast axis direction of the laser light reflected by the eighth optical element 318f. The laser light reflected by the eighth optical element 318f is incident on the ninth optical element 319f.

[0293] As a result, the relationship between the orientation of the bottom 130 of the first semiconductor laser module 101f and the orientation of the laser light emitted from the first semiconductor laser module 101f is different from, for example, the relationship between the orientation of the bottom 130 of the first semiconductor laser module 101 according to the first embodiment and the orientation of the laser light emitted from the first semiconductor laser module 101. In other words, the degree of freedom in designing the arrangement of multiple semiconductor laser modules such as the first semiconductor laser module 101f is improved.

[0294] (Sixth Modification of the Second Embodiment) Fig. 24 is a schematic diagram showing an optical system of a first semiconductor laser module 101g included in a light source module 1g according to a sixth modified example of the second embodiment. Specifically, Fig. 24(a) is a plan view, and Fig. 24(b) is a cross-sectional view showing a cut surface taken along line bb in Fig. 24(a).

[0295] Light source module 1g has the same configuration as light source module 1a according to the second embodiment, except for one main point: specifically, ninth optical element 319g, which is part of first optical element 310g, is a rotationally symmetric convex lens.

[0296] 24, the first laser light that has passed through the ninth optical element 319g converges at a first convergence angle θfc1 in the direction of the second optical axis F1. Furthermore, the first laser light that has passed through the ninth optical element 319g converges and focuses at a convergence angle θsc1 in the direction of the third optical axis S1, and then diverges at a divergence angle θsc1 and enters the fifth optical element 350.

[0297] In this case, since the ninth optical element 319g is a convex lens having power also in the direction of the third optical axis S1, it is possible to increase the distance between the ninth optical element 319g constituting the window of the first package 21 and the fifth optical element 350. This makes it easier to design the position of the fifth optical element 350.

[0298] (Seventh Modification of the Second Embodiment) Fig. 25 is a schematic diagram showing an optical system of a first semiconductor laser module 101h included in a light source module 1h according to a seventh modification of the second embodiment. Specifically, Fig. 25(a) is a plan view, and Fig. 25(b) is a cross-sectional view showing a cut surface taken along line bb in Fig. 25(a).

[0299] The light source module 1h has the same configuration as the light source module 1a according to the second embodiment, except for one point below: Specifically, the second optical element 320h is a lens having a convex cylindrical surface that has power in the direction of the second optical axis F1.

[0300] 25, the first laser light passing through the ninth optical element 319h converges and focuses on the second optical axis F1 at a first convergence angle θfc1, then diverges at a divergence angle θfc1, and enters the second optical element 320h. In this case, since the second optical element 320h is a lens having a convex cylindrical surface with power in the direction of the second optical axis F1, the distance between the ninth optical element 319h that constitutes the window of the first package 21 and the second optical element 320h can be increased. This makes it easier to design the position of the second optical element 320h.

[0301] Furthermore, by disposing the second optical element 320h in the vicinity of the convergence position of the first laser light, the beam width BFw of the first laser light in the fast axis direction can be narrowed.

[0302] (Eighth Modification of the Second Embodiment) Fig. 26 is a schematic diagram showing an optical system of a first semiconductor laser module 101i included in a light source module 1i according to an eighth modification of the second embodiment. Specifically, Fig. 26(a) is a plan view, and Fig. 26(b) is a cross-sectional view showing a cut surface taken along line bb in Fig. 26(a).

[0303] The light source module 1i has a configuration in which the second optical element 320a of the light source module 1d according to the third modified example of the second embodiment is replaced with the second optical element 320h according to the seventh modified example of the second embodiment.

[0304] (Ninth Modification of the Second Embodiment) Fig. 27 is a schematic diagram showing an optical system of a first semiconductor laser module 101j included in a light source module 1j according to a ninth modification of the second embodiment. Specifically, Fig. 27(a) is a plan view, and Fig. 27(b) is a cross-sectional view showing a cut surface taken along line bb in Fig. 27(a).

[0305] Light source module 1j has a configuration in which the second optical element 320a of light source module 1e according to the fourth modified example of the second embodiment is replaced with the second optical element 320h according to the seventh modified example of the second embodiment.

[0306] (Tenth Modification of the Second Embodiment) Fig. 28 is a schematic diagram showing an optical system of a first semiconductor laser module 101k included in a light source module 1k according to a tenth modification of the second embodiment. Specifically, Fig. 28(a) is a plan view, and Fig. 28(b) is a cross-sectional view showing a cut surface taken along line bb in Fig. 28(a).

[0307] Light source module 1k has a configuration in which second optical element 320a of light source module 1g according to the sixth modified example of the second embodiment is replaced with second optical element 320h according to the seventh modified example of the second embodiment.

[0308] (Third embodiment) Next, a third embodiment will be described. The third embodiment differs from the first and second embodiments in that a semiconductor laser module in which a plurality of semiconductor laser elements are arranged two-dimensionally is used. The following description will focus on the differences from the second embodiment, and the description of the commonalities will be omitted or simplified.

[0309] Fig. 29 is a perspective view showing the optical system of a light source module 1m according to a third embodiment. Fig. 30 is a cross-sectional view showing a cut surface of the optical system of the light source module 1m taken along the line XXX-XXX in Fig. 29. Fig. 31 is a perspective view showing the configuration of a semiconductor laser module 100m of the light source module 1m.

[0310] 29 to 31, the light source module 1m includes one semiconductor laser module 100m, a plurality of FAC lenses, a plurality of SAC lenses, a seventh optical element 370m, a twelfth optical element 380m, and an optical fiber 4m. The plurality of FAC lenses include a second optical element 320m and a fourth optical element 340m. The plurality of SAC lenses include a fifth optical element 350m and a sixth optical element 360m. The seventh optical element 370m includes a plurality of first reflecting mirrors 371 and a plurality of second reflecting mirrors 372.

[0311] The semiconductor laser module 100m includes a first package 21m, a plurality of semiconductor laser elements (for example, a first semiconductor laser element 11 and a second semiconductor laser element 12), a plurality of submounts 50, and a lens array optical element 400. The lens array optical element 400 is an optical element in which a first optical element 310m and a third optical element 330m are integrally formed.

[0312] The first package 21m has a bottom 130m, a frame 120m, and multiple posts 180. The bottom 130m is a flat plate-shaped member made of a material with high thermal conductivity, such as Cu. The frame 120 has a frame shape with an opening in the center, is made of Kovar, or the like, and is fixed to the bottom 130m with silver solder or the like. Anode output electrodes 131m, which are multiple lead pins, are formed on one side wall of the frame 120m. Cathode output electrodes 134m, which are multiple lead pins, are formed on the side wall of the frame 120m opposite the side wall of the frame 120m on which the anode output electrodes 131m are formed. The anode output electrodes 131m and cathode output electrodes 134m are provided to penetrate the frame 120m and are fixed to the frame 120m via an insulating ring made of insulating inorganic glass or the like.

[0313] The posts 180 are rectangular parallelepiped members made of a material with high thermal conductivity, such as Cu. The posts 180 are arranged side by side at predetermined intervals in the minor axis direction (x direction) on the surface (positive z-axis direction) of the bottom 130m. The posts 180 are fixed to the bottom 130m with silver solder or the like.

[0314] The frame 120m is disposed perpendicular to the bottom 130m. The frame 120m is disposed so as to surround the plurality of posts 180. The plurality of semiconductor laser elements are mounted on each side of the plurality of posts 180 via the submounts 50 so as to be aligned in the longitudinal direction (y direction). That is, the plurality of semiconductor laser elements are two-dimensionally arranged in the opening of the frame 120m. More specifically, the plurality of semiconductor laser elements are arranged in a matrix in the opening of the frame 120m. In this embodiment, the plurality of semiconductor laser elements are arranged in 16 rows and 4 columns, but this is not limited to this. In this case, each of the plurality of semiconductor laser elements and each of the submounts 50 are fixed using an inorganic material such as AuSn solder. Furthermore, the plurality of semiconductor laser elements mounted on one post 180 are electrically connected in series by metal wires (not shown), and are further connected to an anode lead electrode 131m and a cathode lead electrode 134m. For ease of identification, the plurality of semiconductor laser elements may be referred to as a first semiconductor laser element 11, a second semiconductor laser element 12, and a third semiconductor laser element 13, for example.

[0315] The first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13 are, for example, nitride-based semiconductor laser elements that irradiate first, second, and third laser beams. The first, second, and third laser beams are emitted in a direction from the bottom 130m toward the frame 120m (positive ζ-axis direction, z-direction). The slow axes (third optical axis S1, sixth optical axis S2, etc.) of the first, second, and third laser beams are aligned along the long axis of the post 180 (y-direction), and the fast axes (second optical axis F1, fifth optical axis F2, etc.) are aligned along the direction in which the multiple posts 180 are arranged (x-direction). The second semiconductor laser element 12 is disposed on a side of a different post 180 than the first semiconductor laser element 11, but is aligned along the second optical axis F1. The third semiconductor laser element 13 is disposed on the side surface of the same post 180 as the first semiconductor laser element 11, and is aligned in the direction of the third optical axis S1.

[0316] The lens array optical element 400 is an optical component onto which the first laser beam, the second laser beam, and the third laser beam emitted from the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13 are incident. The lens array optical element 400 has a plurality of biconvex cylindrical lens structures that function as FA lenses. In this embodiment, as shown in FIGS. 29 to 31 , the plurality of biconvex cylindrical lens structures are lens structures that extend in the same shape in the long axis direction of the post 180, i.e., in the direction of the third optical axis S1. The plurality of biconvex cylindrical lens structures include a first optical element 310m as a single biconvex cylindrical lens structure onto which the first laser beam and the third laser beam are incident, and a third optical element 330m as a single biconvex cylindrical lens onto which the second laser beam is incident, and are arranged in the x direction.

[0317] The lens array optical element 400 is a member that covers the opening of the frame 120m, which is located on the positive z-axis side of the frame 120m. In other words, in this embodiment, the lens array optical element 400 is also an optical member in which a lid and a light-transmitting window are integrally molded. The peripheral portion of the lens array optical element 400 has a flat edge portion where a biconvex cylindrical lens structure is not formed, and the lens array optical element 400 is fixed to the flat step portion 121m inside the frame 120m using a solder material or the like. Therefore, the multiple semiconductor laser elements are hermetically sealed in the first package 21m by the frame 120m, the lens array optical element 400, and the bottom 130m. With the above configuration, the first semiconductor laser element 11 can be hermetically sealed using the lens array optical element 400. In other words, the number of components constituting the light source module 1m can be reduced.

[0318] In the laser light emission direction of the semiconductor laser module 100m, a plurality of FAC lenses into which laser light (such as the first laser light L13) is incident are arranged in a matrix of 4 rows and 4 columns in the direction of the second optical axis F1 (ξ direction, x direction) and the direction of the third optical axis S1 (η direction, y direction) so as to correspond to the plurality of laser light. Each of the plurality of FAC lenses has the same configuration as the second optical element 320a according to the second embodiment. That is, the first laser light L13 is incident on the second optical element 320m. The second laser light L23 is incident on the fourth optical element 340m.

[0319] Furthermore, a plurality of SAC lenses, onto which the laser beams (such as the first laser beam L14) emitted from the plurality of FAC lenses are incident, are similarly arranged in a matrix of 4 rows and 4 columns in the second optical axis F1 direction (ξ direction) and the third optical axis S1 direction (η direction). Each of the plurality of SAC lenses has the same configuration as the fifth optical element 350 according to the second embodiment. That is, the first laser beam L14 is incident on the fifth optical element 350m. The second laser beam L24 is incident on the sixth optical element 360m.

[0320] The multiple FAC lenses and multiple SAC lenses are adjusted to their optimum positions relative to the multiple laser beams emitted from the semiconductor laser module 100m and fixed with an ultraviolet curing adhesive, etc. The multiple FAC lenses and multiple SAC lenses convert the multiple laser beams (e.g., first laser beam L15 and second laser beam L25) emitted from the multiple laser elements into laser beams that have narrow beam widths in the direction of the second optical axis F1 and are parallel collimated beams that travel toward the seventh optical element 370m.

[0321] 30, the beam width of the first laser beam L15 in the direction of the second optical axis F1 (fast axis) after passing through the fifth optical element 350m, which is an SAC lens, is indicated by BFw1. Similarly, the beam width of the entire plurality of laser beams after passing through the plurality of SAC lenses in the direction of the second optical axis F1 (fast axis) is indicated by BFw2. The entire beam width BFw2 of the plurality of laser beams after exiting the plurality of SAC lenses is wide at this point in time according to the spacing between the plurality of semiconductor laser elements.

[0322] The laser beams that have passed through the SAC lenses are reflected by the first reflecting mirrors 371 and then by the second reflecting mirrors 372. The first reflecting mirrors 371 correspond to the laser beams, and are arranged in four rows and four columns, totaling 16 mirrors. The first reflecting mirrors 371 are arranged with their reflecting surfaces tilted at 45° with respect to the first direction D1 of the first laser beam.

[0323] The plurality of first reflecting mirrors 371 are arranged such that their respective reflecting surfaces approach the semiconductor laser module 100m in sequence at intervals of approximately the beam width BFw1 in the direction from the first semiconductor laser element 11 to the second semiconductor laser element 12. As a result, the laser beams (such as the first laser beam L15 and the second laser beam L25) emitted from the first semiconductor laser element 11 and the semiconductor laser elements (such as the second semiconductor laser element 12) aligned in the direction of the second optical axis F1 of the first semiconductor laser element 11 overlap in fast axes, become combined laser beams with a beam interval of approximately the beam width of one laser beam, and travel in the direction of the plurality of second reflecting mirrors 372 (negative direction of the x-axis).

[0324] Furthermore, Figure 30 also shows a plurality of first reflecting mirrors 371 corresponding to the laser light emitted from the third semiconductor laser element 13 and the semiconductor laser elements aligned in the direction of the second optical axis F1 from the third semiconductor laser element 13.

[0325] The first reflecting mirror 371 corresponding to the third semiconductor laser element 13 and the semiconductor laser elements aligned in the direction of the second optical axis F1 from the third semiconductor laser element 13 are positioned farther away from the semiconductor laser module 100m than the first reflecting mirror 371 corresponding to the first semiconductor laser element 11.

[0326] The first reflecting mirrors 371 corresponding to the semiconductor laser elements aligned in the direction of the second optical axis F1 from the third semiconductor laser element 13 are similarly arranged so that their reflecting surfaces approach the semiconductor laser module 100m in order at intervals of approximately the beam width BFw1.

[0327] The first reflecting mirror 371 corresponding to the semiconductor laser element farthest from the third semiconductor laser element 13 and the reflecting mirror corresponding to the first semiconductor laser element 11 are arranged to be spaced apart by an interval of approximately the beam width BFw1 in the first direction D1. With this configuration, the laser beams emitted from the third semiconductor laser element 13 and the semiconductor laser elements aligned in the direction of the second optical axis F1 of the third semiconductor laser element 13 have fast axes that overlap, and are combined into laser beams with a beam interval of approximately the beam width of one laser beam, which travel in the direction of the multiple second reflecting mirrors 372 (the negative direction of the x-axis).

[0328] Here, first, eight of the 16 semiconductor laser elements will be described. In Fig. 30, the third semiconductor laser element 13, the semiconductor laser elements aligned from the third semiconductor laser element 13 in the second optical axis F1 direction, and the laser beams emitted from these semiconductor laser elements appear to overlap with the first semiconductor laser element 11, the second semiconductor laser element 12, and the first and second laser beams, respectively, but are shifted in the direction of the third optical axis S1. The laser beams emitted from the first semiconductor laser element 11 and the semiconductor laser elements aligned from the first semiconductor laser element 11 in the second optical axis F1 direction, and the third semiconductor laser element 13 and the semiconductor laser elements aligned from the third semiconductor laser element 13 in the second optical axis F1 direction are reflected by a plurality of first reflecting mirrors 371, and then aligned in the direction of the second optical axis F1 (z direction) at intervals of approximately beam width BFw1 when viewed from the direction of the third optical axis S1 (y direction). In this way, by being reflected by the multiple first reflecting mirrors 371, the overall beam width BFw3 in the direction of the second optical axis F1 (fast axis) of the multiple laser beams (eight laser beams in this embodiment) emitted from the multiple semiconductor laser elements can be made sufficiently narrower than the beam width BFw2 before incidence.

[0329] On the other hand, the laser light emitted from the remaining eight semiconductor laser elements out of the 16 semiconductor laser elements has the same configuration as the eight semiconductor laser elements described above, with the eight elements arranged in two rows.

[0330] 29, the plurality of laser beams reflected by the plurality of first reflecting mirrors 371 are reflected by the plurality of second reflecting mirrors 372. At this time, the laser beams emitted from the semiconductor laser elements lined up in the direction of the second optical axis F1 are reflected by the same second reflecting mirror 372. The reflecting surface of the second reflecting mirror 372 that reflects the laser beams emitted from the first semiconductor laser element 11 and the semiconductor laser elements lined up from the first semiconductor laser element 11 in the direction of the second optical axis F1, and the reflecting surface of the second reflecting mirror 372 that reflects the laser beams emitted from the third semiconductor laser element 13 and the semiconductor laser elements lined up from the third semiconductor laser element 13 in the direction of the second optical axis F1, coincide with the direction of the third optical axis S1. Therefore, the laser light emitted from the first semiconductor laser element 11 and the semiconductor laser elements aligned from the first semiconductor laser element 11 in the second optical axis F1 direction, and the laser light emitted from the third semiconductor laser element 13 and the semiconductor laser elements aligned from the third semiconductor laser element 13 in the second optical axis F1 direction, become laser light that coincides with the direction of the second optical axis F1 (fast axis). Therefore, after being emitted from the plurality of second reflecting mirrors 372, the plurality of laser light beams emitted from the semiconductor laser module 100m become a group of laser light beams arranged in two rows and eight columns, and are directed toward the twelfth optical element 380m. Therefore, the beam width of the plurality of laser light beams in the direction of the third optical axis S1 (slow axis) as a whole is narrowed.

[0331] The laser beams reflected by the second reflecting mirrors 372 reach a twelfth optical element 380m. The laser beams collected by the twelfth optical element 380m enter an optical fiber 4m. The twelfth optical element 380m is an optical component corresponding to the twelfth optical element 380a in the second embodiment.

[0332] The light source module 1m according to this embodiment is a module that can spatially combine and emit laser light beams emitted from a plurality of semiconductor laser elements included in one semiconductor laser module 100m using an optical system.

[0333] Specifically, in a 100m semiconductor laser module, 16 semiconductor laser elements are integrated with multiple FA lenses. (i.e., lens array optical element 400) Therefore, the position of the corresponding FA lens is not adjusted to the optimum position in response to the variation in the position of each semiconductor laser element. However, in the light source module 1m, the optical element in which multiple FA lenses are integrated is (i.e., lens array optical element 400) In addition to the seventh optical element 370m, multiple FAC lenses and multiple SAC lenses corresponding to the individual semiconductor laser elements are provided. Therefore, the positions of the multiple FAC lenses and multiple SAC lenses can be adjusted with respect to the multiple laser beams from the semiconductor laser module 100m, allowing for the emission of collimated laser beams that are parallel to each other. Therefore, the multiple laser beams can be easily spatially combined using the seventh optical element 370m. Furthermore, the divergence angle of the fast-axis direction components of the multiple laser beams emitted from the semiconductor laser module 100m is smaller than the divergence angle of the laser beams emitted from the semiconductor laser elements. Therefore, the positions of the multiple FAC lenses can be easily adjusted.

[0334] Furthermore, the configuration of this embodiment can reduce the overall beam width of the multiple laser beams in both the second optical axis F1 direction and the third optical axis S1 direction, so that the multiple laser beams can be incident on the target (the end face of the optical fiber 4m) with high coupling efficiency.

[0335] Moreover, the semiconductor laser module 100m according to this embodiment can be said to be an integrally formed first semiconductor laser module and second semiconductor laser module.

[0336] The first and second modifications of the third embodiment will be described below. The following description will focus on the differences from the third embodiment and other modifications, and explanations of commonalities will be omitted or simplified.

[0337] (First modified example of the third embodiment) Fig. 32A is a perspective view showing the configuration of one semiconductor laser module 100n included in a light source module 1n according to a first modification of the third embodiment. Fig. 32B is a schematic cross-sectional view showing the configuration of the periphery of a first semiconductor laser element 11 included in one semiconductor laser module 100n.

[0338] The semiconductor laser module 100n has the same configuration as the light source module 1m according to the third embodiment, mainly except for the following three points: the posts 180 are not provided, the semiconductor laser elements are directly disposed on the bottom 130m via the submounts 50, and thirteenth optical elements 390 are provided so as to correspond to the laser light emission sides of the semiconductor laser elements, respectively.

[0339] The plurality of thirteenth optical elements 390 are positioned to correspond to the plurality of semiconductor laser elements, respectively. As an example, the thirteenth optical element 390 is an optical component positioned between the first semiconductor laser element 11 and the first optical element 310m. The thirteenth optical element 390 is a rising mirror element having a reflective surface at an angle of 45° with respect to the laser light emission direction of the semiconductor laser element. In this embodiment, the reflective surface is a flat mirror, but it may also have a reflective concave mirror surface, similar to the eighth optical element 318f according to the fifth modification of the second embodiment. The concave mirror surface is, for example, a parabolic surface.

[0340] The plurality of thirteenth optical elements are optical elements that deflect the laser light emitted from each of the plurality of semiconductor laser elements in a direction parallel to the surface of the bottom 130m (z direction) by 90 degrees in a direction from the bottom 130m toward the frame 120m (ζ direction, x direction). Therefore, the first direction D1 of the first laser light is deflected by 90 degrees.

[0341] In this modification, since the thirteenth optical element 390 is provided, a plurality of semiconductor laser elements can be disposed on the bottom 130m via a plurality of submounts 50. Therefore, Joule heat generated in the plurality of semiconductor laser elements is efficiently transferred to the bottom 130m and efficiently dissipated.

[0342] Furthermore, the semiconductor laser module 100m of the light source module 1m according to the third embodiment can be replaced with the semiconductor laser module 100n. By arranging the semiconductor laser module 100n so that the first direction D1 (ζ direction), the second optical axis F1 direction (ξ direction), and the third optical axis S1 direction (η direction) of the first laser light emitted from the semiconductor laser module 100n coincide with the first direction D1 (ζ direction), the second optical axis F1 direction (ξ direction), and the third optical axis S1 direction (η direction) of the first laser light of the light source module 1m, the multiple laser beams emitted from the semiconductor laser module 100n in the direction (ζ direction) from the bottom 130m toward the frame 120m exhibit the same behavior as the light source module 1m. In other words, this modification is also expected to have the same effects as the third embodiment. Specifically, when manufacturing the semiconductor laser module 100n, even if the positions of the light emitting points of the multiple semiconductor laser elements that determine the optical axis of the laser light, the reflecting surfaces of the multiple thirteenth optical elements 390, and the multiple biconvex cylindrical lens structures in the lens array optical element 400 are not all adjusted and fixed with high precision at the same time, the progression and collimation of the multiple laser lights can be adjusted with high precision by adjusting the positions of the multiple FAC lenses and SAC lenses, so that the multiple laser lights can be incident on the target (the end face of the optical fiber) with high coupling efficiency.

[0343] (Second modified example of the third embodiment) Fig. 33 is a diagram showing the configuration of one semiconductor laser module 100p included in a light source module according to a second modified example of the third embodiment. More specifically, Fig. 33(a) is a diagram of the semiconductor laser module 100p as viewed from the lens array optical element 400p side, and Fig. 33(b) is a cross-sectional view showing a cut surface taken along line bb in Fig. 33(a), showing the optical system.

[0344] The semiconductor laser module 100p has the same configuration as the light source module 1n according to the first modified example of the third embodiment, except for the following two points: Specifically, the semiconductor laser elements and the lenses of the lens array optical element 400p are arranged in a triangular lattice pattern, and the shapes of the lenses provided in the lens array optical element 400p and the reflecting surface of the thirteenth optical element are different.

[0345] In this modification, the multiple semiconductor laser elements are arranged in a triangular lattice pattern. More specifically, the multiple semiconductor laser elements are arranged so as to correspond to the positions of the vertices of triangles in the triangular lattice pattern. Furthermore, the eighth optical element 318p and the tenth optical element 338p, each arranged on the emission side of the semiconductor laser elements, are reflective mirrors, and have, for example, parabolic concave reflective mirror surfaces similar to the eighth optical element 318f in the fifth modification of the second embodiment. Furthermore, the ninth optical element 319p and the eleventh optical element 339p formed in the lens array optical element 400p have a plano-convex lens structure similar to the ninth optical element 319f in the fifth modification of the second embodiment. Therefore, the combination of the eighth optical element 318p and the ninth optical element 319p constitutes the first optical element 310p. The first optical element 310p is provided at positions corresponding to each of the multiple semiconductor laser elements. can .

[0346] The optical axes A1 of the eighth optical element 318p and the ninth optical element 319p are arranged so as to correspond to the positions of the vertices of the triangles in the triangular lattice. As shown in Fig. 33(a), the interfaces of the ninth optical element 319p and the eleventh optical element 339p in plan view are formed as hexagons.

[0347] The first package 21p of the semiconductor laser module 100p has a bottom 130p and a frame 120p fixed on the bottom 130p. An anode output electrode 131p, which is a plurality of lead pins, is formed on one side wall of the frame 120p. A cathode output electrode 134p, which is a plurality of lead pins, is formed on the side wall opposite to the one side wall of the frame 120p. The anode output electrode 131p and the cathode output electrode 134p are arranged so that their lead pins are staggered. The first semiconductor laser element 11 and the second semiconductor laser element 12 are located on the anode output electrode 131p side of the first package 21p and are aligned in the direction in which the plurality of lead pins of the anode output electrode 131p are aligned.

[0348] The first and second laser beams emitted from the first and second semiconductor laser elements 11 and 12 are emitted with their fast axes (second optical axis F1 and fifth optical axis F2) overlapping when emitted from the semiconductor laser module 100p. The third semiconductor laser element 13 is aligned with the first semiconductor laser element 11 in the direction of the third optical axis S1. The fourth semiconductor laser element 14 is disposed between the electrical connection between the first semiconductor laser element 11 and the third semiconductor laser element 13. In this manner, in this modification, a plurality of semiconductor laser elements are arranged in a triangular lattice pattern, which enables an increase in the packaging density of the semiconductor laser elements.

[0349] The multiple semiconductor laser elements are electrically connected in series by multiple metal wires 190p. A first metal film and a second bonding member are provided on the semiconductor laser element side of the submount 50. The multiple metal wires 190p connect the anode extraction electrode 131p, the first metal film of the submount 50 holding the first semiconductor laser element 11, the substrate-side surface of the first semiconductor laser element 11, the first metal film of the submount 50 holding the fourth semiconductor laser element 14, the substrate-side surface of the fourth semiconductor laser element 14, the first metal film of the submount 50 holding the third semiconductor laser element 13, and the cathode extraction electrode 134p.

[0350] Moreover, the semiconductor laser module 100m included in the light source module 1m according to the third embodiment can be replaced with a semiconductor laser module 100p.

[0351] (Fourth embodiment) Next, a fourth embodiment will be described. The fourth embodiment differs from the second embodiment in that each of the plurality of semiconductor laser modules is arranged two-dimensionally, and that the seventh optical element is a diffraction grating that combines a plurality of laser beams by wavelength combining. The following description will focus on the differences from the second embodiment, and the description of the commonalities will be omitted or simplified.

[0352] [composition] First, the configuration of the light source module according to the fourth embodiment will be described with reference to FIGS. 34 and 35A.

[0353] Fig. 34 is a perspective view showing the configuration of a light source module 1q. More specifically, Fig. 34(a) is a perspective view showing the overall configuration of 1q. Fig. 34(b) is an enlarged perspective view of a plurality of semiconductor laser modules 100a according to the fourth embodiment.

[0354] Fig. 35A is a perspective view showing an example of the optical system of the light source module 1q, in which the behavior of a typical laser beam is indicated by a dashed arrow.

[0355] 34 and 35A, the light source module 1q includes a case 2q, a plurality of semiconductor laser modules 100a, a plurality of FAC lenses (e.g., second and fourth optical elements 320a and 340a), a plurality of SAC lenses (e.g., fifth and sixth optical elements 350 and 360), a first reflecting mirror 375q, a second reflecting mirror 376q, a third reflecting mirror 377q, a seventh optical element 370q that is a diffraction grating, a fourteenth optical element 391 that is an external resonance reflecting mirror, a twelfth optical element 380a that is a condenser lens, and an optical fiber 4. Note that the second reflecting mirror 376q, the third reflecting mirror 377q, the seventh optical element 370q, the fourteenth optical element 391, and the twelfth optical element 380a that is a condenser lens are omitted in FIG.

[0356] In this embodiment, the multiple FAC lenses (e.g., second and fourth optical elements 320a and 340a), the multiple SAC lenses (e.g., fifth and sixth optical elements 350 and 360), the twelfth optical element 380a which is a condenser lens, and the optical fiber 4 have the same configurations as those shown in the second embodiment. The multiple semiconductor laser modules 100a have the same configurations as those shown in the second embodiment, except for the semiconductor laser elements. In this embodiment, a non-reflective coating film is formed as an end face coating film on the emission surface of the semiconductor laser element (e.g., first semiconductor laser element 11), which is different from the semiconductor laser element of the second embodiment. Therefore, the semiconductor laser element of this embodiment does not form a resonator between the emission surface and the rear facet.

[0357] In this embodiment as well, for ease of identification, the plurality of semiconductor laser modules 100a may be referred to as a first semiconductor laser module 101a and a second semiconductor laser module 102a as an example.

[0358] In this embodiment, the wavelengths of the laser beams emitted by the plurality of semiconductor laser modules 100a are different from each other. In other words, the wavelength of the first laser beam emitted by the first semiconductor laser module 101a is different from the wavelength of the second laser beam emitted by the second semiconductor laser module 102a, and for example, the wavelength of the first laser beam is shorter than the wavelength of the second laser beam.

[0359] Unlike the first and second embodiments, each of the multiple semiconductor laser modules 100a is arranged along an arc. On the other hand, the multiple semiconductor laser modules 100a are arranged on the same plane on a base, not on a base of different heights like the multi-stage base 5 according to the first embodiment. Therefore, in this embodiment, the directions in which the first and second laser beams are emitted from the first and second semiconductor laser modules 101a and 102a do not coincide. That is, the first direction D1 and the second direction D2 do not coincide, and the third optical axis S1 and the sixth optical axis S2 do not coincide. On the other hand, the first direction D1 and the second direction D2 exist in the same plane parallel to the third optical axis S1 and the sixth optical axis S2.

[0360] The case 2q corresponds to the case 2 according to the first embodiment. A plurality of semiconductor laser modules 100a and the like are installed inside the case 2q, and the case 2q is sealed with a lid (not shown). The case 2q has a base 6q, a sidewall 3q, and two lids (not shown). The base 6q has a flat plate-shaped first surface 61q and a second surface 62q opposite the first surface 61q. The sidewall 3q is disposed perpendicular to both the first surface 61q and the second surface 62q so as to surround the center of the base 6q. The two lids (not shown) are disposed above and below the sidewall 3q, sandwiching the base 6q. In other words, the base 6q, the sidewall 3q, and the two lids (not shown) form two spaces in the case 2q. The base 6q also has an opening 8q near its center. The opening 8q spatially connects the two spaces of the case 2q.

[0361] Furthermore, a side wall 3q on the first surface 61q side of the base 6q is formed with a plurality of electrical terminals such as an anode lead pin 931 and a cathode lead pin 934, which are lead pins, and electrically connect the outside to the inside. Furthermore, an optical fiber attachment terminal for holding an optical fiber 4 is formed on the side wall 3q on the second surface 62q side of the base 6q, and laser light can be extracted from the inside of the case 2q to the outside.

[0362] In the light source module 1q, the components are allocated to the two spaces described above. Specifically, the semiconductor laser modules 100a, the FAC lenses, the SAC lenses, the first reflecting mirror 375q, and the electrical terminals are arranged in the space on the first surface 61q side of the base 6q.

[0363] On the other hand, the second reflecting mirror 376q, the third reflecting mirror 377q, the seventh optical element 370q which is a diffraction grating, the fourteenth optical element 391, the twelfth optical element 380a, and the optical fiber 4 are arranged in the space on the second surface 62q side of the base 6q. Then, except for the plurality of electrical terminals and the optical fiber 4 which are fixed to the side wall 3q, each of the components in the respective spaces is fixed to the base 6q.

[0364] Furthermore, an anode wiring block 291 and a cathode wiring block 294 that supply power to the semiconductor laser modules 100a are fixed to the base 6q near the multiple semiconductor laser modules 100a. The anode wiring block 291 and the cathode wiring block 294 are formed by forming a metal film of Ni, Au, or the like on the surface of an insulating block such as alumina ceramic. The anode and cathode output electrodes of each of the 18 semiconductor laser modules 100a arranged in an arc are electrically connected in series to the cathode and anode output electrodes on both sides via metal wires or the like. The anode and cathode output electrodes of the semiconductor laser modules 100a at both ends are electrically connected to the anode wiring block 291 and the cathode wiring block 294, respectively. The anode wiring block 291 and the cathode wiring block 294 are electrically connected to the anode lead pins 931 and the cathode lead pins 934 of the case 2q, respectively, via metal wires. For example, the anode output electrode 131 of the first semiconductor laser module 101a is electrically connected to the anode wiring block 291 by a metal wire 194 such as an aluminum ribbon wire. The cathode output electrode 134 of the first semiconductor laser module 101a is electrically connected to the anode output electrode 1312 of the adjacent second semiconductor laser module 102a by a metal wire 193. The cathode output electrode 1342 of the second semiconductor laser module 102a is electrically connected to the anode output electrode of the adjacent third semiconductor laser module by a metal wire 1931. In this way, in the light source module 1q, power can be supplied to multiple internal semiconductor laser modules using the anode lead pin 931 and the cathode lead pin 934.

[0365] Each of the first to third reflecting mirrors 375q, 376q, and 377q reflects the laser light emitted from each of the plurality of semiconductor laser modules 100a on the same reflecting surface. The first to third reflecting mirrors 375q, 376q, and 377q are not essential components for the function of multiplexing the plurality of laser light beams and emitting them from the optical fiber 4. However, the first to third reflecting mirrors 375q, 376q, and 377q are arranged to reflect and turn back the optical paths of the plurality of laser light beams or change the traveling direction, thereby making the light source module 1q smaller and thinner.

[0366] In this embodiment, the seventh optical element 370q is a diffraction grating onto which the laser light emitted from each of the multiple semiconductor laser modules 100a is incident, and the laser light is combined by wavelength combining and output as laser light traveling along the same optical axis.

[0367] The fourteenth optical element 391 is a half mirror that reflects a portion of the laser light emitted from each of the semiconductor laser modules 100a and transmits the other portion. The laser light reflected by the fourteenth optical element 391 is fed back to the light-emitting point of the semiconductor laser element of the semiconductor laser module 100a that emitted the laser light. For example, a portion of the first laser light incident on the fourteenth optical element 391 exits the fourteenth optical element 391, passes through the fifth optical element 350 and the second optical element 320a, and enters the first semiconductor laser element 11. Therefore, the fourteenth optical element 391 functions as a resonator mirror on the emission side of each of the semiconductor laser elements. In this embodiment, the fourteenth optical element 391 is disposed on the optical axis between the seventh optical element 370q and the twelfth optical element 380a.

[0368] The twelfth optical element 380 a is a condenser lens that condenses the laser light emitted from the fourteenth optical element 391 into the optical fiber 4 .

[0369] 35B, the configuration of the first semiconductor laser module 101a, which is an example of the plurality of semiconductor laser modules 100a, will be described. Of the plurality of semiconductor laser modules 100a, the modules other than the first semiconductor laser module 101a also have the same configuration as the first semiconductor laser module 101a. In this embodiment, the semiconductor laser module 100a fixed to the module support member 163 is also treated as a semiconductor laser module unit 1000.

[0370] FIG. 35B is a perspective view showing the configuration around the first semiconductor laser module 101a. The module support member 163 has a rectangular flat plate shape. The module support member 163 is preferably made of a material with high thermal conductivity to efficiently dissipate heat generated in the first semiconductor laser module 101a to the case. The module support member 163 is made of, for example, a Cu flat plate, the surface of which is plated with Ni or Au. Two screw openings are formed in the longitudinal direction of the rectangular flat plate shape of the module support member 163. The first semiconductor laser module 101a is fixed to a predetermined position on the module support member 163 with a joining material such as solder. By using a semiconductor laser module unit 1000 including the semiconductor laser module 100a fixed to such a module support member 163, the semiconductor laser module unit 1000 can be easily fixed to a holding member such as a case with screws or the like.

[0371] Furthermore, the second optical element 320a and the fifth optical element 350 are provided at predetermined positions on one surface of the module support member 163 on the laser light emission side of the semiconductor laser module 100a. At this time, the second optical element 320a is supported by the optical support member 164, and the position of the second optical element 320a is fixed.

[0372] [Behavior of laser light] Furthermore, the laser light emitted from each of the semiconductor laser modules 100a will be described with reference to FIG.

[0373] Fig. 36 is a schematic diagram showing the optical system of the light source module 1q. In Fig. 36, the optical axes of the multiple laser beams (optical axis A1, optical axis A2, etc.) are indicated by dashed arrows.

[0374] 36, laser beams of predetermined wavelengths are emitted from the semiconductor laser modules 100a arranged in an arc shape, and the laser beams are directed toward a first reflecting mirror 375q. The first reflecting mirror 375q reflects the laser beams collimated by the FAC lenses and the SAC lenses. The second reflecting mirror 376q reflects the laser beams reflected by the first reflecting mirror 375q.

[0375] The seventh optical element 370q combines the multiple laser beams reflected by the second reflecting mirror 376q and emits the combined beam toward the third reflecting mirror 377q. The third reflecting mirror 377q reflects the multiple laser beams emitted from the seventh optical element 370q. The fourteenth optical element 391 reflects some of the multiple laser beams reflected by the third reflecting mirror 377q and transmits the others. The twelfth optical element 380a focuses the multiple laser beams emitted from the fourteenth optical element 391 onto the incident end face of the optical fiber 4. In other words, the twelfth optical element 380a focuses the other laser beams that have transmitted through the fourteenth optical element 391 onto the incident end face of the optical fiber 4. The optical fiber 4 guides the laser beams incident on the incident end face to the outside of the light source module.

[0376] Here, the behavior of the seventh optical element 370q, which is a diffraction grating, and the fourteenth optical element 391, which is a half mirror, will be described in more detail.

[0377] First, we will explain the fourteenth optical element 391. Each of the portions of the laser beams reflected by the fourteenth optical element 391 returns to each of the semiconductor laser modules 100a via the third reflecting mirror 377q, the seventh optical element 370q, the second reflecting mirror 376q, and the first reflecting mirror 375q.

[0378] At this time, a resonator is formed between the rear end facets of the semiconductor laser elements included in the semiconductor laser modules 100a and the fourteenth optical element 391. That is, in this embodiment, the semiconductor laser elements included in each of the semiconductor laser modules 100a are external cavity laser diodes (ECLDs).

[0379] At this time, the laser beams emitted from the semiconductor laser modules 100a are incident on the seventh optical element 370q at different incident angles. i (For example, in the first semiconductor laser module 101a, the incident angle α i (1)), the outgoing angle α of the laser light, which is the diffracted light that is emitted from the seventh optical element 370q and directed toward the fourteenth optical element 391, is o If the angle is not set to a predetermined angle, the laser will not oscillate as an external cavity laser.

[0380] On the other hand, the exit angle α o is the incident angle α of each of the plurality of laser beams. i The diffraction grating pitch of the diffraction grating of the seventh optical element 370q is determined by the wavelength of the incident laser light.

[0381] Therefore, after determining the laser oscillation wavelength range of the semiconductor laser element that constitutes the external cavity laser, the position and laser light emission direction of the semiconductor laser module 100a, the position, orientation and diffraction grating pitch of the seventh optical element 370q, and the position and orientation of the fourteenth optical element 391 are set to predetermined values, thereby causing oscillation as an external cavity laser.

[0382] Specifically, for example, for the first semiconductor laser module 101a, by setting as described above, the incident angle α of the laser light of the first semiconductor laser module 101a can be i (1) and the exit angle α oAn oscillation wavelength is determined according to the above, and the laser light exits the fourteenth optical element 391 and proceeds toward the twelfth optical element 380a. Note that the diffraction grating depth and diffraction grating shape of the diffraction grating of the seventh optical element 370q are optimized so that the proportion of the laser light that is diffracted light that exits the seventh optical element 370q and proceeds toward the fourteenth optical element 391 is sufficiently larger than the diffracted light that is exited in other directions.

[0383] In the light source module 1q, by determining the arrangement and oscillation wavelength range of all of the semiconductor laser modules 100a so that the above-mentioned conditions are met, each of the semiconductor laser modules 100a functions as an ECLD with a determined oscillation wavelength, and the seventh optical element 370q emits light at the same output angle α o , the laser beam is emitted on the same optical axis.

[0384] In summary, the light source module 1q according to this embodiment is a module that can wavelength-multiplex laser light beams emitted from the plurality of semiconductor laser modules 100a by an optical system and emit the multiplexed laser light beams.

[0385] [How to adjust the FAC lens and SAC lens positions] Next, a method for manufacturing light source module 1q in this embodiment will be described with reference to Figure 34 and Figures 37A to 37C, focusing on a method for adjusting the positions of the FAC lens and SAC lens. Here, second optical element 320a will be described as an example of a plurality of FAC lenses, and fifth optical element 350 will be described as an example of a plurality of SAC lenses.

[0386] Fig. 37A is a perspective view showing the arrangement of the first semiconductor laser module 101a according to the fourth embodiment. Fig. 37B is a perspective view showing how the semiconductor laser module unit 1000 according to the fourth embodiment is fixed. Fig. 37C is a perspective view for explaining a method for adjusting the positions of the second optical element 320a and the fifth optical element 350 according to the fourth embodiment.

[0387] 37A, the first semiconductor laser module 101a is fixed at a predetermined position on one surface of the module support member 163 to manufacture the semiconductor laser module unit 1000. At this time, a solder sheet such as SnAgCu is sandwiched between the module support member 163 and the first semiconductor laser module 101a, and they are fixed by applying pressure and heat.

[0388] Next, the anode wiring block 291 and the cathode wiring block 294 are fixed to the base 6q. Next, the multiple semiconductor laser module units 1000 are fixed to predetermined positions in the case 2q. At this time, multiple screw holes are formed at predetermined positions on the first surface 61q of the base 6q, and as shown in FIG. 37B, the semiconductor laser module units 1000 can be fixed to the base 6q with screws 166. Therefore, the multiple first semiconductor laser modules 101a can be easily fixed to the case 2q. Next, the multiple semiconductor laser modules 100a, the anode wiring block 291, the cathode wiring block 294, the anode lead electrode 131, and the cathode lead electrode 134 are electrically connected by metal wires.

[0389] Next, the twelfth optical element 380a, the fourteenth optical element 391, the third reflecting mirror 377q, the seventh optical element 370q, and the second reflecting mirror 376q are fixed to the second surface 62q side of the base 6q with an ultraviolet curing adhesive or the like. Then, the first reflecting mirror 375q is fixed to the first surface 61q side of the base 6q with an ultraviolet curing adhesive or the like. Next, the optical fiber 4 is attached so that the amount of laser light coupled into the optical fiber 4 can be monitored when laser light is emitted from the multiple semiconductor laser modules 100a.

[0390] Next, the plurality of FAC lenses and the plurality of SAC lenses are placed at predetermined positions on the module support member 163, and are fixed while adjusting their positions relative to the plurality of semiconductor laser modules 100a.

[0391] 37C, first, optical support member 164 is fixed at a predetermined position on one surface of module support member 163. Next, second optical element 320a and fifth optical element 350 are placed on one surface of module support member 163. At this time, uncured ultraviolet curing adhesive is placed between second optical element 320a and optical support member 164, and between fifth optical element 350 and module support member 163. Then, power is input to the semiconductor laser element to emit laser light. Then, while monitoring the amount of light emitted from the optical fiber 4, the position of the second optical element 320a is slightly moved in a direction parallel to the optical axis A1 (direction +A or direction −A) or a direction parallel to the second optical axis F1 (direction +F or direction −F), and the position of the fifth optical element 350 is slightly moved in a direction parallel to the optical axis A1 (direction +A or direction −A) or a direction parallel to the third optical axis S1 (direction +S, −S). Then, ultraviolet light is irradiated at the optimal position, and the second optical element 320a, the optical support member 164, and the fifth optical element 350 are fixed in the optimal positions. In other words, active alignment is performed as in the first embodiment.

[0392] In this embodiment, the semiconductor laser module 100a has an anode lead electrode 131 and a cathode lead electrode 134 formed on the upper surface side (i.e., the side where the lid is placed) of the semiconductor laser module 100a. Therefore, by using a probe or the like to operate each semiconductor laser module 100a, active alignment can be performed efficiently.

[0393] [Effects, etc.] Furthermore, for example, in light source module 1q according to the present embodiment, seventh optical element 370q is a diffraction grating.

[0394] This realizes a light source module 1q that can more efficiently combine the laser beams emitted from the plurality of semiconductor laser modules 100a.

[0395] As described above, in the light source module 1q according to the present embodiment, the wavelengths of the first laser light and the second laser light are different.

[0396] As a result, the light source module 1q according to this embodiment can combine and emit laser beams having different wavelengths emitted from the plurality of semiconductor laser modules 100a by using an optical system. In other words, a light source module 1q capable of wavelength combining is realized.

[0397] Furthermore, for example, the light source module 1q according to the present embodiment has a fourteenth optical element 391 onto which the first laser light is incident after passing through the second optical element 320a and the fifth optical element 350. A part of the first laser light incident on the fourteenth optical element 391 exits the fourteenth optical element 391, passes through the fifth optical element 350 and the second optical element 320a, and is incident on the first semiconductor laser element 11.

[0398] As a result, the fourteenth optical element 391 functions as a resonator mirror on the emission side of each of the semiconductor laser elements, and therefore a resonator can be formed between the fourteenth optical element 391 and the rear end facets of each of the semiconductor laser elements included in the semiconductor laser modules 100a.

[0399] Furthermore, for example, in the light source module 1q according to the present embodiment, the fourteenth optical element 391 is disposed on the optical axis between the seventh optical element 370q and the twelfth optical element 380a.

[0400] This allows for more efficient resonance between the rear end facets of the plurality of semiconductor laser elements and the fourteenth optical element 391. Furthermore, by disposing the seventh optical element 370q between the rear end facets of the plurality of semiconductor laser elements and the fourteenth optical element 391, the oscillation wavelengths of the semiconductor laser elements can be optimized, and the emitted light beams that enter and exit the seventh optical element can be wavelength-multiplexed. Therefore, efficient wavelength multiplexing can be achieved in the seventh optical element.

[0401] The first and second modifications of the fourth embodiment will be described below, focusing on the differences from the fourth embodiment, and explanation of the commonalities will be omitted or simplified.

[0402] (First modified example of the fourth embodiment) FIG. 38 is a perspective view showing the configuration of the periphery of a first semiconductor laser module 101a according to a first modification of the fourth embodiment.

[0403] The light source module according to the first modification of the fourth embodiment has the same configuration as the light source module 1q according to the fourth embodiment, except for one point: Specifically, the fifth optical element 350 is disposed between the second optical element 320a and the ninth optical element 319a.

[0404] Furthermore, the second optical element 320a is fixed to two optical support portions 165 protruding from the module support member 163 via adhesive 167. The two optical support portions 165 are configured to sandwich the second optical element 320a in the direction of the third optical axis S1. With this configuration, the second optical element 320a can be slightly moved in the direction of the optical axis A1 (+A, -A) and the direction of the second optical axis F1 (+F, -F) before the adhesive 167 hardens. In other words, it becomes easy to adjust the position of the second optical element 320a in the direction of the optical axis A1 and the direction of the second optical axis F1.

[0405] Furthermore, with this configuration, a light source module capable of wavelength multiplexing is realized in this modified example as in the fourth embodiment.

[0406] As in the fourth embodiment, the second optical element 320a may be disposed between the fifth optical element 350 and the ninth optical element 319a, and the optical support portion 165 may be disposed in accordance with the second optical element 320a.

[0407] (Second Modification of the Fourth Embodiment) Fig. 39 is a schematic diagram showing an optical system of a light source module 1r according to a second modified example of the fourth embodiment. Fig. 40 is a perspective view showing a configuration around a first semiconductor laser module 101a according to the second modified example of the fourth embodiment.

[0408] The light source module 1r has the same configuration as the light source module 1q according to the fourth embodiment, mainly except for the following three points: laser beam splitting elements 210, which are wavelength-selective diffraction gratings, are arranged between the fifth optical element 350 and the first reflecting mirror 375q in correspondence with the individual semiconductor laser modules 100a; fourteenth optical elements 391 are arranged in correspondence with the laser beam splitting elements 210; and the seventh optical element 370r is a reflective diffraction grating.

[0409] In this modification, each of the plurality of laser beam separating elements 210 is disposed between each of the plurality of SAC lenses and the first reflecting mirror 375q. A fourteenth optical element 391, which functions as a resonator mirror on the emission side of the semiconductor laser element, is disposed adjacent to and facing the laser beam separating element 210. Furthermore, as shown in FIG. 40 , the laser beam separating element 210 and the fourteenth optical element 391 are fixed to a module support member 163 on which the semiconductor laser module 100a is mounted, thereby constituting a semiconductor laser module unit 1000. At this time, an actuator 211, which is a rotary motor, is fixed to the module support member 163, and the laser beam separating element 210 is fixed to the rotation axis of the actuator 211.

[0410] The plurality of laser beam separating elements 210 are optical components that separate the first laser beam onto a first optical axis (optical axis A1). The plurality of laser beam separating elements 210 are, for example, diffraction gratings having a predetermined diffraction grating pitch. For example, as shown in FIG. 40, a first laser beam L15 incident on one laser beam separating element 210 is directed toward a fourteenth optical element 391 as diffracted beam L151 depending on the diffraction grating pitch and the incident angle of the first laser beam. That is, the first laser beam separated by the laser beam separating element 210 is incident on the fourteenth optical element 391. The laser beam reflected by the fourteenth optical element 391 is fed back to the light-emitting point of the semiconductor laser element of the semiconductor laser module 100a from which it was emitted.

[0411] That is, in this modification, the plurality of semiconductor laser elements form a cavity between each of the plurality of fourteenth optical elements 391 and the rear end facet of each of the plurality of semiconductor laser elements. That is, in this modification, the plurality of semiconductor laser elements and the plurality of fourteenth optical elements 391 constitute an ECLD.

[0412] The wavelength of the laser beam emitted from the semiconductor laser element described above is determined by the diffraction grating pitch of the laser beam separation element 210 and the incident angle of the laser beam. Meanwhile, the laser beam separation element 210 is fixed to a rotation axis of an actuator 211 that rotates the laser beam separation element 210. Therefore, by rotating the multiple actuators 211 by a predetermined angle, the incident angles of the multiple laser beams change, and the oscillation wavelengths of the laser beams emitted from the multiple semiconductor laser modules 100a can be adjusted.

[0413] As described above, the laser beam emitted from the semiconductor laser module 100a, whose oscillation wavelength has been determined, is mostly transmitted through the laser beam separation element 210 and directed toward the first reflecting mirror 375q, then reflected by the second reflecting mirror 376q, and converged at a predetermined position on the seventh optical element 370r.

[0414] The seventh optical element 370r is an optical element that reflects and combines the laser beams emitted from the semiconductor laser modules 100a. As described in the fourth embodiment, even in the reflective diffraction grating, the incident angle β of the laser beams incident on the seventh optical element 370r is i (For example, in the first semiconductor laser module 101a, the incident angle β i (1)), the outgoing diffracted light, that is, the laser light, has an outgoing angle β o is determined by the incident angle, the diffraction grating pitch, and the wavelength of the laser light. Therefore, it is necessary to determine the wavelength of the incident laser light according to the position of the semiconductor laser module 100a and the direction of the emitted laser light so that the laser light emitted from the seventh optical element 370r is multiplexed, that is, so that the emission directions of the multiple laser light beams are aligned.

[0415] In the semiconductor laser module 100a or the semiconductor laser module unit 1000 of this modification, the wavelength of the emitted laser light can be determined in advance. Specifically, by, for example, rotating the plurality of actuators 211, it is possible to control the wavelength of each of the plurality of laser light beams passing through the plurality of laser beam separation elements 210. Therefore, the incident angle β to the seventh optical element 370r i is determined based on the arrangement of the plurality of semiconductor laser modules 100a, and the wavelengths of the plurality of laser beams are controlled, so that the emission directions of the plurality of laser beams can be made to coincide with each other.

[0416] Furthermore, in the above configuration, the multiple FAC lenses and multiple SAC lenses are provided outside the multiple semiconductor laser modules 100a. Therefore, it is possible to adjust the wavelength while adjusting the propagation direction of the multiple laser beams emitted from the multiple semiconductor laser modules 100a. Furthermore, even if the multiple FAC lenses that adjust the propagation direction and wavelength of the emitted laser beam, the multiple SAC lenses, the multiple laser beam separation elements 210, and the fourteenth optical element 391 are fixed using a resin such as an ultraviolet curing adhesive, the semiconductor laser elements are hermetically sealed inside the semiconductor laser module 100a, so that deterioration due to the adhesion of foreign matter can be suppressed.

[0417] In summary, with this configuration, in this modification as well, a light source module 1r capable of wavelength multiplexing is realized, similar to the fourth embodiment.

[0418] (Fifth embodiment) Next, a fifth embodiment will be described. The following description will focus on the differences from the second embodiment, and the description of the commonalities will be omitted or simplified.

[0419] FIG. 41 is a perspective view showing the configuration of a light source module 1s according to the fifth embodiment.

[0420] For simplicity, the frame 171 and the like described in the second embodiment are not shown in Fig. 41. Also, in Fig. 41, the semiconductor laser module 21s is indicated by a broken line.

[0421] The light source module 1s has the same configuration as the light source module 1a according to the second embodiment, except for the following one point: Specifically, the one point is that a plurality of semiconductor laser elements are hermetically sealed in the semiconductor laser module 21s.

[0422] In this embodiment, the base 6 is provided with a multi-stage base 5b.

[0423] The multi-stage base 5b is provided with a seventh optical element 370 which is a plurality of reflective mirrors, a plurality of FAC lenses having concave cylindrical surfaces (e.g., the second and fourth optical elements 320a and 340a), and a plurality of SAC lenses having convex cylindrical surfaces (e.g., the fifth and sixth optical elements 350 and 360).

[0424] The multistage base 5a is hermetically sealed within the semiconductor laser module 21s. A plurality of semiconductor laser elements (e.g., the first semiconductor laser element 11 and the second semiconductor laser element 12), an eighth optical element 318a, and a tenth optical element 338a are provided on each stage of the multistage base 5a.

[0425] Furthermore, a ninth optical element 319a, which is a part of the first optical element 310a, and an eleventh optical element 339a, which is a part of the third optical element 330a, form a light-transmitting window of the semiconductor laser module 21s.

[0426] That is, in this embodiment, the first semiconductor laser element 11, the second semiconductor laser element 12, the ninth optical element 319a which is a part of the first optical element 310a, and the eleventh optical element 339a which is a part of the third optical element 330a are hermetically sealed by the semiconductor laser module 21s, the ninth optical element 319a which is a part of the first optical element 310a, and the eleventh optical element 339a which is a part of the third optical element 330a.

[0427] Furthermore, with this configuration, similar to the first embodiment, a compact light source module 1s is realized which suppresses deterioration of the first semiconductor laser element 11 and the second semiconductor laser element 12 and has high coupling efficiency of the laser light in the seventh optical element.

[0428] (First modified example of the fifth embodiment) Next, a first modified example of the fifth embodiment will be described. Fig. 42 is a perspective view showing the configuration of a light source module it.

[0429] The light source module 1t has the same configuration as the light source module 1s according to the fifth embodiment, except for one point below: Specifically, the second optical element 320 and the fourth optical element 340, which are multiple FAC lenses, are lenses having convex cylindrical surfaces.

[0430] Furthermore, even with this configuration, as in the fifth embodiment, a compact light source module 1t is realized that suppresses deterioration of the first semiconductor laser element 11 and the second semiconductor laser element 12 and has high coupling efficiency of the laser light in the target object.

[0431] (Sixth embodiment) Next, a sixth embodiment will be described.

[0432] [composition] The configuration of the first semiconductor laser module included in the light source module according to the sixth embodiment will be described with reference to FIG.

[0433] Fig. 43 is a perspective view showing the configuration of a first semiconductor laser module 101u according to the sixth embodiment, in which the optical axis of the laser light is indicated by a broken line.

[0434] The light source module according to the sixth embodiment has the same configuration as the light source module according to the first modified example of the second embodiment, except for the following one point: Specifically, the one point is that the plurality of semiconductor laser elements are hermetically sealed in the first package 21u of the first semiconductor laser module 101u.

[0435] 43, first, second, and third semiconductor laser elements 11, 12, and 13 as an example of the plurality of semiconductor laser elements are hermetically sealed by a first package 21u, an integrally molded light-transmitting window 317, a ninth optical element 319b, an eleventh optical element 339b, and a lid (not shown). The plurality of semiconductor laser elements are arranged side by side at predetermined intervals in a direction perpendicular to the direction in which the laser light is emitted.

[0436] An eighth optical element 318a, which is a part of the first optical element 310b, and a ninth optical element 319b, which is a part of the first optical element 310b, are provided in the directions in which the first, second, and third laser beams are emitted from the first, second, and third semiconductor laser elements 11, 12, and 13. In this embodiment, the light-transmitting window 317, the ninth optical element 319b, and the eleventh optical element 339b are integrally molded, and the eighth optical element 318a and the tenth optical element 338a are integrally molded.

[0437] In the above-described embodiments, for example, the fifth embodiment, the first optical element 310a is an optical component corresponding to the first semiconductor laser element 11, and the third optical element 330a is an optical component corresponding to the second semiconductor laser element 12. However, in this embodiment, the integrally formed first optical element 310b and third optical element 330b are optical components corresponding to the first and second semiconductor laser elements 11 and 12. The integrally formed first optical element 310b and third optical element 330b are optical components having a power greater than a power along the third optical axis F1. As an example, the integrally formed eighth optical element 318b and tenth optical element 338b constituting the first optical element 310b are cylindrical lenses having a power axis and a non-power axis. More specifically, the eighth optical element 318b and the tenth optical element 338b, which are integrally formed, are cylindrical lenses obtained by modifying the eighth optical element 318a of the first modified example of the second embodiment so that the length in the non-power axis direction is longer than the spacing between the plurality of semiconductor laser elements. The ninth optical element 319b and the eleventh optical element 339b, which are integrally formed, are also cylindrical lenses having a power axis and a non-power axis. More specifically, the ninth optical element 319b and the eleventh optical element 339b, which are integrally formed, are cylindrical lenses obtained by modifying the ninth optical element 319a of the first modified example of the second embodiment so that the length in the non-power axis direction is longer than the spacing between the plurality of semiconductor laser elements. This configuration makes it easy to realize the first semiconductor laser module 101u including a plurality of semiconductor laser elements.

[0438] In this embodiment, the first, second, and third semiconductor laser elements 11, 12, and 13 are formed separately and mounted separately on a single submount 50, forming a so-called hybrid array laser element. The second optical axis F1 of the first laser beam L11 emitted from the first semiconductor laser element 11 and the fifth optical axis F2 of the second laser beam L21 emitted from the second semiconductor laser element 12 are arranged parallel to the power axes of the eighth optical element 318b and the tenth optical element 338b. The first optical element 310b reduces the first divergence angle of the first laser beam L11 in the direction of the second optical axis F1. Similarly, the fourth divergence angle of the second laser beam L12 is reduced in the direction of the fifth optical axis F2. However, in this case, the position of the light-emitting point of the semiconductor laser element and the emission direction of the laser beam depend on the accuracy of mounting on the submount 50. For example, if the mounting accuracy on the submount 50 varies, the position of the light-emitting point of the semiconductor laser element will also vary. Therefore, it is difficult to perfectly align the emission directions of laser light from each of the multiple semiconductor laser elements. Therefore, in order to align the emission directions of laser light from each of the multiple semiconductor laser elements, it is necessary to adjust each of the laser lights.

[0439] In a light source module using the first semiconductor laser module 101u, a plurality of FAC lenses (e.g., second and fourth optical elements 320a and 340a) and a plurality of SAC lenses (e.g., fifth and sixth optical elements 350 and 360) are arranged outside the first semiconductor laser module 101u in the direction of emission of the laser light from the first semiconductor laser module 101u. Even in such a case, it is easy to adjust the positions of the plurality of FAC lenses and the plurality of SAC lenses. Therefore, the divergence angles and propagation directions of the first, second, and third laser lights can be adjusted, respectively, and the lights can be incident on an object with high coupling efficiency.

[0440] In this embodiment, even when the hybrid laser array elements are arranged in the first package 21u, electrical wiring is facilitated. Specifically, a first metal film 137, a second metal film 138, a third metal film 1381, and a fourth metal film 1382, which are insulated from one another, are formed on the submount 50. The first semiconductor laser element 11 is mounted on the first metal film 137 via a bonding member, the second semiconductor laser element 12 is mounted on the second metal film 138 via a bonding member, and the third semiconductor laser element 13 is mounted on the third metal film 1381 via a bonding member. The plurality of semiconductor laser elements are electrically connected in series by metal wires 190, 1901, 1902, 191, and 192, and further, a plurality of metal wires 190p are connected to the anode electrode 132 and the cathode electrode 135. With this configuration, power can be supplied to a plurality of hermetically sealed semiconductor laser elements using the externally disposed anode lead electrode 131 and cathode lead electrode 134.

[0441] [Method of manufacturing semiconductor laser module] Here, a method for manufacturing the first semiconductor laser module 101u will be described with reference to FIG.

[0442] FIG. 44 is a schematic view showing a method for manufacturing the first semiconductor laser module 101u according to the sixth embodiment.

[0443] First, the first, second, and third semiconductor laser elements 11, 12, and 13 are mounted and wired with metal wires above the submount 50. Then, the submount 50 on which the first, second, and third semiconductor laser elements 11, 12, and 13 are mounted is placed inside one first package 21u.

[0444] Next, the eighth optical element 318a is fixed using the first support member 161 so as to be at a predetermined height and distance from the first, second, and third semiconductor laser elements 11, 12, and 13. Then, the ninth optical element 319b is fixed so as to cover the opening 170 of one of the first packages 21u. Then, the submount 50, the anode electrode 132, and the cathode electrode 135 are connected by metal wires (not shown), and the whole is sealed with a lid (not shown).

[0445] With such a configuration and manufacturing method, the first, second and third semiconductor laser elements 11, 12 and 13 are hermetically sealed in one first package 21u.

[0446] [Effects, etc.] As described above, in the light source module according to this embodiment, the first optical element 310b and the third optical element 330b are integrally formed.

[0447] This makes it possible to reduce the number of components that make up the first semiconductor laser module 101u.

[0448] Furthermore, for example, in the light source module according to this embodiment, first semiconductor laser element 11 and second semiconductor laser element 12 are formed separately.

[0449] That is, in this embodiment, a hybrid array laser element is realized. Even in such a case, it is easy to adjust the positions of the plurality of FAC lenses (e.g., the second and fourth optical elements 320a and 340a) and the plurality of SAC lenses (e.g., the fifth and sixth optical elements 350 and 360). Therefore, the first, second, and third laser beams are incident on the target with high coupling efficiency.

[0450] (Seventh embodiment) Next, a seventh embodiment will be described.

[0451] FIG. 45 is a perspective view showing the configuration of a first semiconductor laser module 101v according to the seventh embodiment.

[0452] The first semiconductor laser module 101v has the same configuration as the light source module according to the second modified example of the second embodiment, mainly except for the following two points: Specifically, the first semiconductor laser module 101v uses lens array optical elements as the integrally formed ninth optical element 319v and eleventh optical element 339v, and the first semiconductor laser element 11 and the second semiconductor laser element 12 constitute a semiconductor laser array element 10v formed on the same semiconductor substrate.

[0453] The semiconductor laser array element 10v has multiple optical waveguides 61 formed on a common semiconductor substrate. Each waveguide corresponds to an individual semiconductor laser element. As shown in FIG. 45, the semiconductor laser array element 10v has, for example, three optical waveguides 61 arranged in a stripe pattern. The three optical waveguides 61 correspond to the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13, and laser light is emitted from each of them. Because the multiple optical waveguides 61 are formed on a common semiconductor substrate, the spacing between the optical waveguides 61 can be narrowed (for example, 100 μm to 1000 μm), thereby increasing the density of the laser light. Furthermore, because the multiple optical waveguides 61 are formed on the common semiconductor substrate by photolithography or the like, the spacing between the multiple optical waveguides 61 formed on the common semiconductor substrate can be accurately matched, and the emission directions of the multiple laser light formed on the common semiconductor substrate can be accurately matched.

[0454] In this embodiment, the ninth optical element 319v and the eleventh optical element 339v are integrally molded, the eighth optical element 318a and the tenth optical element 338a are integrally molded, the second optical element 320a and the fourth optical element 340a are integrally molded, and the fifth optical element 350v and the sixth optical element 360v are integrally molded.

[0455] Therefore, the first and third optical elements 310v and 330v are arranged to correspond to the plurality of laser beams emitted by the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13. In other words, the first optical element 310v and the third optical element 330v, which are integrally molded, are used to correspond to the first semiconductor laser element 11 and the second semiconductor laser element 12. Similarly, the fifth optical element 350v and the sixth optical element 360v, which are integrally molded with the second optical element 320a and the fourth optical element 340a, are used for the first semiconductor laser element 11 and the second semiconductor laser element 12.

[0456] The second optical element 320a and the fourth optical element 340a, which are integrally molded, have the same configuration as the second optical element 320a according to the second embodiment.

[0457] The first and third optical elements 310v and 330v are optical components whose power along the second optical axis F1 is greater than that along the third optical axis S1. As an example, the integrally formed first optical element 310v and third optical element 330v are cylindrical lenses having a power axis and a non-power axis.

[0458] The integrally molded ninth optical element 319v and eleventh optical element 339v are lens array optical elements. The integrally molded ninth optical element 319v and eleventh optical element 339v have a plurality of lenses, each of which has a convex surface, similar to the lens array element according to the second modification of the third embodiment. The plurality of lenses have a convex surface on the light-transmitting window 317 side. The plurality of lenses function as FA lenses. By using such first and third optical elements 310v and 330v for a semiconductor laser array element having a plurality of optical waveguides formed on a common semiconductor substrate, the divergence angle of the first laser beam L11 in the direction of the second optical axis F1 and the divergence angle of the second laser beam L12 in the direction of the fifth optical axis F2 can be reduced.

[0459] Furthermore, the integrally molded fifth optical element 350v and sixth optical element 360v are lens arrays having multiple (here, three) convex surfaces to accommodate multiple laser beams emitted by multiple semiconductor laser elements.

[0460] 45, an integrally molded second optical element 320a and fourth optical element 340a, and an integrally molded fifth optical element 350v and sixth optical element 360v are arranged in the emission direction from a first semiconductor laser module 101v. A plurality of first semiconductor laser modules 101v can be used in one light source module. In this case, the integrally molded second optical element 320a and fourth optical element 340a, and the integrally molded fifth optical element 350v and sixth optical element 360v are arranged corresponding to the emission directions of the plurality of laser beams from the plurality of first semiconductor laser modules 101v, respectively. In this light source module, the positions of the light-emitting points between the semiconductor laser elements mounted in different first semiconductor laser modules 101v and the emission directions of the laser beams depend on the mounting accuracy of the first semiconductor laser modules 101v on the light source module. For example, if the mounting accuracy of the multiple first semiconductor laser modules 101v varies, the position of the light-emitting point of the semiconductor laser element and the emission direction of the laser light also vary. Therefore, it is difficult to perfectly align the emission directions of multiple laser lights from the multiple semiconductor laser elements. Therefore, by adjusting the integrally molded second optical element 320a and fourth optical element 340a and the integrally molded fifth optical element 350v and sixth optical element 360v for each first semiconductor laser module 101v, it is possible to align the emission directions of laser lights from the multiple first semiconductor laser modules 101v.

[0461] (Eighth embodiment) Next, an eighth embodiment will be described. The configuration of a first semiconductor laser module included in a light source module according to the eighth embodiment will be described with reference to Figures 46 and 47.

[0462] Fig. 46 is a perspective view showing the configuration of a first semiconductor laser module 101w according to the eighth embodiment, Fig. 47 is a schematic diagram showing the optical system of a light source module 1w according to the eighth embodiment.

[0463] The first semiconductor laser module 101w has the same configuration as the first semiconductor laser module 101v according to the seventh embodiment, except for two main points: a fifteenth optical element 392, which is a beam twister element, is disposed between the first optical element 310w and the light-transmitting window 317, and a plurality of (here, three) optical waveguides 61 are provided.

[0464] Furthermore, the light source module 1w has the same configuration as the light source module 1q according to the fourth embodiment, except for one point: the first semiconductor laser element 11w emits a plurality of first laser beams.

[0465] The light source module 1w according to this embodiment includes a plurality of semiconductor laser modules 100w. Among the plurality of semiconductor laser modules 100w according to this embodiment, the plurality of semiconductor laser modules 100w other than the first semiconductor laser module 101w also have the same configuration as the first semiconductor laser module 101w. In this embodiment, the plurality of semiconductor laser modules 100w emit laser light having different wavelengths.

[0466] The first semiconductor laser device 11w according to this embodiment has a plurality of optical waveguides 61, similar to the seventh embodiment, and emits a first laser beam from each of the plurality of optical waveguides 61.

[0467] A first optical element 310w, a fifteenth optical element 392, and a light-transmitting window 317 are arranged in this order in the emission direction of the first semiconductor laser element 11w.

[0468] The fifteenth optical element 392 constitutes a beam twister element. More specifically, the fifteenth optical element 392 is a cylindrical lens array element. The fifteenth optical element 392 is a cylindrical lens array element having a structure in which the power axis of the cylindrical lens is tilted 45 degrees from the fast axis.

[0469] As a result, the first laser beam emitted from first semiconductor laser element 11w rotates 90 degrees around the first optical axis (optical axis A1). That is, fifteenth optical element 392 has the effect of rotating the fast axes and slow axes of the plurality of first laser beams emitted from first semiconductor laser element 11w by 90 degrees. Therefore, immediately after being emitted from first semiconductor laser element 11w, the fast axes of the plurality of first laser beams are parallel to the x direction and the slow axes are parallel to the y direction, but after passing through the beam twister element, the fast axes of the plurality of first laser beams become parallel to the ξ direction and the slow axes are parallel to the η direction.

[0470] In addition, in this embodiment, a fifth optical element 350 and a second optical element 320w are used. As described above, since the directions of the fast axis and the slow axis are interchanged, the fifth optical element 350 functions as an SAC lens, and the second optical element 320w functions as an FAC lens. The second optical element 320w is a lens array having multiple (three) cylindrical convex surfaces. The fifth optical element 350 is a lens having a cylindrical convex surface.

[0471] As shown in FIG. 47, similar to the fourth embodiment, in the light source module 1w, a plurality of semiconductor laser modules 100w including a first semiconductor laser module 101w and a second semiconductor laser module 102w are arranged along an arc.

[0472] With the above configuration, the same effects as those of the fourth embodiment can be expected.

[0473] Furthermore, since the first semiconductor laser element 11w according to this embodiment emits a plurality of laser beams, the light density of the plurality of laser beams can be increased in the light source module according to this embodiment.

[0474] (Ninth embodiment) Next, a ninth embodiment will be described below with reference to Fig. 48. The configuration of the first semiconductor laser module included in the light source module according to the ninth embodiment will be described.

[0475] FIG. 48 is a perspective view showing the configuration of a first semiconductor laser module 101x according to the ninth embodiment.

[0476] The semiconductor laser module according to the ninth embodiment has the same configuration as the first semiconductor laser module 101w according to the eighth embodiment, mainly except for four points: a semiconductor laser array element 10x having first, second, and third semiconductor laser elements is provided, a first optical element 310x and a third optical element 330x are integrally molded, a second optical element 320x and a fourth optical element 340x are integrally molded, and a fifth optical element 350x and a sixth optical element 360x are integrally molded.

[0477] The first optical element 310x and the third optical element 330x, which are integrally molded, have the same configuration as the first optical element 310w according to the eighth embodiment. The second optical element 320x and the fourth optical element 340x, which are integrally molded, have the same configuration as the second optical element 320w according to the eighth embodiment. The fifth optical element 350x and the sixth optical element 360x, which are integrally molded, have the same configuration as the fifth optical element 350 according to the eighth embodiment.

[0478] With the above configuration, the same effects as those of the fourth embodiment can be expected.

[0479] (Other embodiments) While the light source module according to the present disclosure has been described above based on the embodiments and modifications thereof, the present disclosure is not limited to these embodiments and modifications. As long as the modifications do not deviate from the gist of the present disclosure, various modifications conceivable by a person skilled in the art to the embodiments and other forms constructed by combining some of the components of the embodiments and modifications are also included within the scope of the present disclosure.

[0480] Furthermore, the above-described embodiments can be modified, substituted, added, omitted, and the like in various ways within the scope of the claims or their equivalents.

[0481] Regarding the lenses having a convex or concave cylindrical surface in the above embodiments, the convex or concave surface may be a true cylindrical surface, or may have a shape that is slightly different from a true cylindrical shape. By making the shape slightly different from a true cylindrical shape, it becomes possible to reduce aberrations. [Industrial Applicability]

[0482] According to the present disclosure, it is possible to provide a compact light source module that suppresses deterioration of a semiconductor laser element and has high coupling efficiency of laser light in an object. [Explanation of symbols]

[0483] 1, 1a, 1d, 1e, 1f, 1h, 1i, 1j, 1k, 1n, 1q, 1r, 1s, 1t, 1w, 1z light source module 2, 2q, 2z cases 3, 3q side wall 4, 4z, 43 Fiber Optic 5, 5a, 5b, 5z multi-stage base 6, 6q base 8q, 1201, 1211, 1221, 1231 opening 10v, 10x semiconductor laser array element 11, 11w First semiconductor laser element 11z Semiconductor laser element 12 Second semiconductor laser element 13 Third semiconductor laser element 14. Fourth semiconductor laser element 21, 21a, 21c, 21d, 21p, 21u 1st package 22 Second Package 50, 50z submount 50F metal membrane 60, 60z light emitting point 61 Optical waveguide 61q 1st page 62q 2nd side 100, 100a, 100m, 100n, 100p, 21s, 100w semiconductor laser module 1000 Semiconductor Laser Module Unit 101, 101a, 101b, 101c, 101d, 101e, 101f, 101h, 101i, 101j, 101k, 101u, 101v, 101w, 101x, 1011, 1012, 1013, 1014 First semiconductor laser module 102, 102a, 102w second semiconductor laser module 103 Third Semiconductor Laser Module 110 Lid 120, 120a, 120p frame 121, 121a first frame portion 122, 122a, 122b Second frame portion 123, 123c Third frame 130, 130m, 130p bottom 130a Semiconductor laser element mounting surface 131, 131p, 1312, 1313 Anode extraction electrode 132 Anode electrode 133 Via electrode 134, 134p, 1342 Cathode extraction electrode 135 cathode electrode 136 Via electrode 137 First Metal Film 138 Second Metal Film 1381 Third Metal Film 1382 Fourth Metal Film 141 first joining member 142 Second joining member 143 Third Joint Member 144 Fourth Joint Member 145 Fifth Joint Member 151 First bonding pre-film 152 Second bonding pre-film 161 first support member 162 second support member 163 Module support member 164 Optical support member 165 Optical support section 166 screws 167 Adhesive 170 Opening 171 frames 180 posts 190, 190d, 190p, 191, 192, 193, 194, 1901, 1902, 1931 Metal wire 210 Laser beam separation element 211 Actuator 291 Anode Wiring Block 294 Cathode Wiring Block 310, 310a, 310b, 310c, 310d, 310e, 310f, 310p, 310v, 310w, 310x, 3101, 3102, 3103 First optical element 317, 337 Translucent windows 318a, 318b, 318f, 318p Eighth optical element 319a, 319b, 319c, 319f, 319h, 319p, 319v 9th optical element 320, 320a, 320h, 320m, 320w, 320x, 3201, 3202, 3204 Second optical element 320z, 350z, 380z lenses 330, 330a, 330b, 330v, 330x Third optical element 338a, 338b, 338p 10th optical element 339a, 339b, 339p, 339v 11th optical element 340, 340a, 340m, 340x Fourth Optical Element 350, 350m, 350v, 350x 5th optic 360, 360m, 360v, 360x 6th optic 370, 370q, 370r Seventh Optical Element 370z Reflective Mirror 371, 375q First reflecting mirror 372, 376q Second reflecting mirror 377q Third Reflector 380, 380a, 380m, 3803 12th optical element 390 The 13th Optical Element 391 14th Optical Element 392 15th Optical Element 400, 400p Lens Array Optical Elements 931 Anode lead pin 934 Cathode lead pin L11, L12, L13, L14, L15, L16, L16a, L17 First laser beam L21, L22, L23, L24, L25, L26, L26a, L27 Second laser beam L36, L36a, L37 Third laser beam L46, L46a Fourth laser beam L56, L56a Fifth laser beam L66, L66a 6th laser beam

Claims

1. a first semiconductor laser module having a first semiconductor laser element and a first optical element onto which a first laser beam emitted from the first semiconductor laser element is incident; a second optical element onto which the first laser light having passed through the first optical element is incident; a second semiconductor laser module having a second semiconductor laser element and a third optical element onto which the second laser light emitted from the second semiconductor laser element is incident; a fourth optical element onto which the second laser light having passed through the third optical element is incident; and the first laser light that has passed through the second optical element and the second laser light that has passed through the fourth optical element are combined; a first direction is a traveling direction of the first laser light on a first optical axis that is an optical axis extending from the first semiconductor laser element to the second optical element; the first laser beam has a second optical axis perpendicular to the first direction and a third optical axis perpendicular to the first direction and the second optical axis; the first optical element has a power on the second optical axis greater than a power on the third optical axis; The first laser light reaching the first optical element has a first divergence angle θfd1 that is a divergence angle in the direction of the second optical axis and a second divergence angle θsd1 that is a divergence angle in the direction of the third optical axis, the first divergence angle θfd1 and the second divergence angle θsd1 satisfy 90°>θfd1>θsd1>0, a third divergence angle θfd12, which is a divergence angle of the first laser beam emitted from the first optical element in the direction of the second optical axis, is reduced from the first divergence angle θfd1, a component of the first laser beam emitted from the second optical element in the direction of the second optical axis is collimated; a traveling direction of the second laser light is defined as a second direction on a fourth optical axis that is an optical axis extending from the second semiconductor laser element to the fourth optical element; the second laser beam has a fifth optical axis perpendicular to the second direction and a sixth optical axis perpendicular to the second direction and the fifth optical axis; the third optical element has a power on the fifth optical axis greater than a power on the sixth optical axis; the second laser light reaching the third optical element has a fourth divergence angle θfd2 that is a divergence angle in the direction of the fifth optical axis and a fifth divergence angle θsd2 that is a divergence angle in the direction of the sixth optical axis, the fourth divergence angle θfd2 and the fifth divergence angle θsd2 satisfy 90°>θfd2>θsd2>0, a sixth divergence angle θfd22, which is a divergence angle of the second laser beam emitted from the third optical element in the direction of the fifth optical axis, is reduced from the fourth divergence angle θfd2, a component of the second laser beam emitted from the fourth optical element in the direction of the fifth optical axis is collimated; the first semiconductor laser module hermetically seals the first semiconductor laser element and the first optical element; the second semiconductor laser module hermetically seals the second semiconductor laser element and the third optical element; the first laser light emitted from the first semiconductor laser module is incident on the second optical element, the second laser light emitted from the second semiconductor laser module is incident on the fourth optical element, The first semiconductor laser module comprises: a light-transmitting window through which the first laser beam passes and which extracts the first laser beam to the outside of the first semiconductor laser module; a package including a plate-shaped bottom portion having an upper surface and a frame body having a first opening at its center when viewed in the direction of the second optical axis; a lid; the top surface of the bottom portion has a semiconductor laser element mounting surface that is a portion not covered by the frame body, the first semiconductor laser element is disposed within the first opening and on the semiconductor laser element mounting surface; the lid covers an upper portion of the first opening, the first semiconductor laser element is hermetically sealed by the light-transmitting window, the package, and the lid; the upper side is parallel to the direction of the second optical axis, The first semiconductor laser element, the first optical element, and the light-transmitting window are arranged in this order along the first direction. Light source module.

2. In the combined first laser beam and second laser beam, the first direction and the second direction are the same, The second optical axis and the fifth optical axis coincide with each other. The light source module according to claim 1 .

3. The lid and the light-transmitting window are integrally molded. The light source module according to claim 1 .

4. a second opening portion is provided in the frame portion to spatially connect the first opening portion to the outside of the first semiconductor laser module; The light-transmitting window covers the second opening. The light source module according to claim 1 .

5. the frame has an anode electrode and a cathode electrode that electrically connect the inside of the first opening to the outside of the first semiconductor laser module, At least a portion of the frame is made of an insulator, The anode electrode, the cathode electrode, and the bottom are electrically insulated from each other.

5. The light source module according to claim 3.

6. The frame further includes an anode lead electrode that connects the anode electrode to the outside of the first semiconductor laser module; a cathode lead-out electrode connecting the cathode electrode to an outside of the first semiconductor laser module; and The anode lead-out electrode and the cathode lead-out electrode are disposed on the upper surface of the frame. The light source module according to claim 5 .

7. The anode lead-out electrode and the cathode lead-out electrode are disposed at positions facing the light-transmitting window across the first opening. The light source module according to claim 6 .

8. The first semiconductor laser module and the second semiconductor laser module are arranged side by side in the direction of the third optical axis. The light source module according to claim 1 .

9. The cathode lead electrode of the first semiconductor laser module and the anode lead electrode of the second semiconductor laser module are electrically connected by a metal wire.

8. The light source module according to claim 6 or 7.

10. At least a portion of the first optical element and at least a portion of the third optical element are fixed together by a bonding member made of an inorganic material. The light source module according to claim 1 .

11. At least a portion of the first optical element and the light-transmitting window are integrally molded. The light source module according to claim 1 or 3.

12. the first laser beam having passed through the first optical element has a component of the second optical axis converged toward the second optical element; The second laser beam that has passed through the third optical element has a component of the fifth optical axis that converges toward the fourth optical element. The light source module according to any one of claims 1 to 11.

13. In the first laser beam that has passed through the first optical element, the third divergence angle θfd12, which is a divergence angle in the direction of the second optical axis, satisfies θfc1=−θfd12>0 as a first convergence angle θfc1, In the second laser beam that has passed through the third optical element, the sixth divergence angle θfd22, which is a divergence angle in the direction of the fifth optical axis, satisfies θfc2=−θfd22>0 as a second convergence angle θfc2, The first divergence angle θfd1, the first convergence angle θfc1, the fourth divergence angle θfd2, and the second convergence angle θfc2 satisfy θfd1>θfc1>0 and θfd2>θfc2>0. The light source module according to claim 12 .

14. the second optical element is a lens having a first power axis and a first non-power axis perpendicular to the first power axis, and having a cylindrical surface concave toward the first power axis; the first power axis is aligned parallel to the second optical axis; the fourth optical element is a lens having a second power axis and a second non-power axis perpendicular to the second power axis, and having a cylindrical surface concave toward the second power axis; The second power axis is disposed parallel to the fifth optical axis.

14. The light source module according to claim 12 or 13.

15. the second optical element is a lens having a first power axis and a first non-power axis perpendicular to the first power axis, and having a cylindrical surface convex toward the first power axis; the first power axis is aligned parallel to the second optical axis; the fourth optical element is a lens having a second power axis and a second non-power axis perpendicular to the second power axis, and having a cylindrical surface convex toward the second power axis; The second power axis is disposed parallel to the fifth optical axis. The light source module according to any one of claims 1 to 13.

16. a fifth optical element onto which the first laser light having passed through the first optical element is incident; a sixth optical element onto which the second laser light having passed through the third optical element is incident; and a component of the first laser light passing through the fifth optical element in the direction of the third optical axis is collimated; a component of the second laser light passing through the sixth optical element in the direction of the sixth optical axis is collimated; The first laser light that has passed through the fifth optical element and the second laser light that has passed through the sixth optical element are incident on an object.

16. The light source module of claim 1.

17. The beam width of the first laser beam on the second optical axis after passing through the second optical element is a beam width of the first laser beam passing through the fifth optical element on the third optical axis, The beam width of the second laser beam on the fifth optical axis after passing through the fourth optical element is a beam width of the second laser beam passing through the sixth optical element that is narrower than the beam width of the sixth optical axis of the second laser beam that has passed through the sixth optical element; The light source module according to claim 16.

18. the first optical element comprises a lens having a third power axis and a third non-power axis perpendicular to the third power axis, the lens having a convex or concave cylindrical surface on the third power axis; the third power axis is disposed parallel to the second optical axis; the third optical element includes a lens having a fourth power axis and a fourth non-power axis perpendicular to the fourth power axis, the lens having a convex or concave cylindrical surface on the fourth power axis; The fourth power axis is disposed parallel to the fifth optical axis. The light source module according to any one of claims 1 to 17.

19. The seventh optical element is further provided on which the first laser beam having passed through the fifth optical element and the second laser beam having passed through the sixth optical element are incident.

18. The light source module according to claim 16 or 17.

20. the first optical element is composed of at least an eighth optical element and a ninth optical element; The third optical element is composed of at least a tenth optical element and an eleventh optical element.

19. The light source module according to any one of claims 1 to 18.

21. the eighth optical element is a lens having a fifth power axis and a fifth non-power axis in a direction perpendicular to the fifth power axis, and having a cylindrical surface convex toward the fifth power axis; the fifth power axis is disposed parallel to the second optical axis; the ninth optical element is a lens having a sixth power axis and a sixth non-power axis in a direction perpendicular to the sixth power axis, and having a cylindrical surface convex toward the sixth power axis; the sixth power axis is disposed parallel to the second optical axis; the tenth optical element is a lens having a seventh power axis and a seventh non-power axis perpendicular to the seventh power axis, and having a cylindrical surface convex toward the seventh power axis; the seventh power axis is disposed parallel to the third optical axis; the eleventh optical element is a lens having an eighth power axis and an eighth non-power axis in a direction perpendicular to the eighth power axis, and having a cylindrical surface convex toward the eighth power axis; The eighth power axis is disposed parallel to the third optical axis.

21. The light source module according to claim 20.

22. the fifth optical element is a lens having a ninth power axis and a ninth non-power axis in a direction perpendicular to the ninth power axis, and having a cylindrical surface convex toward the ninth power axis; the ninth power axis is disposed parallel to the third optical axis; the sixth optical element is a lens having a tenth power axis and a tenth non-power axis perpendicular to the tenth power axis, and having a cylindrical surface convex toward the tenth power axis; The tenth power axis is arranged parallel to the sixth optical axis.

20. A light source module according to claim 16, 17 or 19.

23. the second optical element is disposed between the first optical element and the fifth optical element; The fourth optical element is disposed between the third optical element and the sixth optical element.

23. A light source module according to claim 16, 17, 19 or 22.

24. The seventh optical element is composed of a plurality of reflecting mirrors.

20. The light source module of claim 19.

25. the first laser beam and the second laser beam become parallel beams after being emitted from the seventh optical element, the second optical axis and the fifth optical axis overlap, The third optical axis and the sixth optical axis do not overlap.

25. The light source module of claim 24.

26. The seventh optical element is composed of a diffraction grating.

20. The light source module of claim 19.

27. The wavelength of the first laser light and the wavelength of the second laser light are different.

27. A light source module according to any one of claims 1 to 26.

28. further comprising a twelfth optical element onto which the first laser beam and the second laser beam that have passed through the seventh optical element are incident, The first laser light and the second laser light that have passed through the twelfth optical element are focused on the object.

27. A light source module according to claim 19, 24, 25 or 26.

29. The object is an end face of an optical fiber.

29. A light source module according to claim 16, 19, 24, 25, 26 or 28.

30. further comprising a thirteenth optical element between the first semiconductor laser element and the first optical element; The thirteenth optical element is a rising mirror. The light source module according to claim 1 or 2.

31. further comprising a fourteenth optical element onto which the first laser light having passed through the second optical element and the fifth optical element is incident, A part of the first laser light incident on the fourteenth optical element exits the fourteenth optical element, passes through the fifth optical element and the second optical element, and is incident on the first semiconductor laser element.

29. The light source module of claim 28.

32. The fourteenth optical element is disposed on the optical axis between the seventh optical element and the twelfth optical element.

32. The light source module of claim 31.

33. further comprising a laser beam splitting element on the first optical axis for splitting the first laser beam; The first laser beam separated by the laser beam separation element is incident on the fourteenth optical element.

32. The light source module of claim 31.

34. the first semiconductor laser element is a nitride-based semiconductor laser element, The second semiconductor laser element is a nitride-based semiconductor laser element.

34. A light source module according to any one of claims 1 to 33.

35. the first semiconductor laser element emits a plurality of laser beams; The second semiconductor laser element emits a plurality of laser beams.

35. A light source module according to any one of claims 1 to 34.

36. a fifth optical element onto which the first laser light having passed through the first optical element is incident; a sixth optical element onto which the second laser light having passed through the third optical element is incident; and a component of the first laser light passing through the fifth optical element in the direction of the third optical axis is collimated; a component of the second laser light passing through the sixth optical element in the direction of the sixth optical axis is collimated; the first laser light that has passed through the fifth optical element and the second laser light that has passed through the sixth optical element are incident on an object; the fifth optical element is disposed outside the package. The light source module according to claim 1 .

37. a first semiconductor laser module having a first semiconductor laser element and a first optical element onto which a first laser beam emitted from the first semiconductor laser element is incident; a second optical element onto which the first laser light having passed through the first optical element is incident; a second semiconductor laser module having a second semiconductor laser element and a third optical element onto which the second laser light emitted from the second semiconductor laser element is incident; a fourth optical element onto which the second laser light having passed through the third optical element is incident; and the first laser light that has passed through the second optical element and the second laser light that has passed through the fourth optical element are combined; a first direction is a traveling direction of the first laser light on a first optical axis that is an optical axis extending from the first semiconductor laser element to the second optical element; the first laser beam has a second optical axis perpendicular to the first direction and a third optical axis perpendicular to the first direction and the second optical axis; the first optical element has a power on the second optical axis greater than a power on the third optical axis; The first laser light reaching the first optical element has a first divergence angle θfd1 that is a divergence angle in the direction of the second optical axis and a second divergence angle θsd1 that is a divergence angle in the direction of the third optical axis, the first divergence angle θfd1 and the second divergence angle θsd1 satisfy 90°>θfd1>θsd1>0, a third divergence angle θfd12, which is a divergence angle of the first laser beam emitted from the first optical element in the direction of the second optical axis, is reduced from the first divergence angle θfd1, a component of the first laser beam emitted from the second optical element in the direction of the second optical axis is collimated; a traveling direction of the second laser light is defined as a second direction on a fourth optical axis that is an optical axis extending from the second semiconductor laser element to the fourth optical element; the second laser beam has a fifth optical axis perpendicular to the second direction and a sixth optical axis perpendicular to the second direction and the fifth optical axis; the third optical element has a power on the fifth optical axis greater than a power on the sixth optical axis; the second laser light reaching the third optical element has a fourth divergence angle θfd2 that is a divergence angle in the direction of the fifth optical axis and a fifth divergence angle θsd2 that is a divergence angle in the direction of the sixth optical axis, the fourth divergence angle θfd2 and the fifth divergence angle θsd2 satisfy 90°>θfd2>θsd2>0, a sixth divergence angle θfd22, which is a divergence angle of the second laser beam emitted from the third optical element in the direction of the fifth optical axis, is reduced from the fourth divergence angle θfd2, a component of the second laser beam emitted from the fourth optical element in the direction of the fifth optical axis is collimated; the first laser light emitted from the first semiconductor laser module is incident on the second optical element, the second laser light emitted from the second semiconductor laser module is incident on the fourth optical element, The first semiconductor laser module comprises: a light-transmitting window through which the first laser beam passes and which extracts the first laser beam to the outside of the first semiconductor laser module; a package including a plate-shaped bottom portion having an upper surface and a frame body having a first opening at its center when viewed in the direction of the second optical axis; a lid; the top surface of the bottom portion has a semiconductor laser element mounting surface that is a portion not covered by the frame body, the first semiconductor laser element is disposed within the first opening and on the semiconductor laser element mounting surface; the lid covers an upper portion of the first opening, the first optical element and the light-transmitting window are integrally molded, the first semiconductor laser element is hermetically sealed by the first optical element and the light-transmitting window, which are integrally molded, the package, and the lid; the upper side of the first opening is parallel to the direction of the second optical axis; The second semiconductor laser module includes: another light-transmitting window through which the second laser beam passes and which extracts the second laser beam to the outside of the second semiconductor laser module; another package including another plate-shaped bottom portion having another top surface, and another frame body having another first opening at its center when viewed in the direction of the fifth optical axis; and another lid, the other top surface of the other bottom portion has another semiconductor laser element mounting surface that is a portion not covered by the other frame body, the second semiconductor laser element is disposed within the other first opening and on the other semiconductor laser element mounting surface, the other lid covers an upper portion of the other first opening, the third optical element and the other light-transmitting window are integrally molded, the second semiconductor laser element is hermetically sealed by the integrally molded third optical element and another light-transmitting window, the other package, and the other lid, the upper side of the other first opening is parallel to the direction of the fifth optical axis; Light source module.

38. A multi-step base is provided with a plurality of stair-like steps, the first semiconductor laser module is installed on one of the plurality of stages; The second semiconductor laser module is installed in another one of the plurality of stages.

38. The light source module of claim 37.

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