Electronic Components

Abstract

To solve the issue that the outer surface of an insulation film is easily charged with static electricity.SOLUTION: An electronic component 10 includes: an element body 20; an insulation film 50 covering the outer surface of the element body 20; a first underlying electrode and a second underlying electrode for covering the outer surface of the insulation film 50; and a charge prevention layer 70 with a larger electric conductivity than that of the insulation film 50. The charge prevention layer 70 is located between the outer surface of the element body 20 and the inner surface of the insulation film 50. The charge prevention layer 70 is discontinuous between the first underlying electrode and the second underlying electrode.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to electronic components. [Background technology]

[0002] The electronic component described in Patent Document 1 comprises an element body, an insulating film, and a base electrode. The insulating film comprises a first layer and a second layer. The first layer covers the outer surface of the element body. The second layer covers the outer surface of the first layer. Both the first layer and the second layer comprise an insulating metal oxide. The base electrode includes a first base electrode and a second base electrode. Each base electrode covers a portion of the outer surface of the second layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 4683052 Summary of the Invention [Problem to be solved by the invention]

[0004] In electronic components such as those described in Patent Document 1, the insulating film has a portion exposed to the outside. Here, static electricity can be generated on the outer surface of the insulating film when the insulating films of multiple electronic components rub against each other or against other objects. Furthermore, because the insulating film of the electronic component described in Patent Document 1 is insulating, static electricity that has accumulated on the surface of the insulating film that is exposed to the outside is difficult to dissipate. In other words, because the insulating film of the electronic component is insulating, the outer surface of the insulating film is easily charged with static electricity. [Means for solving the problem]

[0005] In order to solve the above problem, the present invention provides an electronic component comprising an element body, an insulating film covering the outer surface of the element body, a first base electrode covering the outer surface of the insulating film, a second base electrode covering the outer surface of the insulating film at a location spaced apart from the first base electrode, and an antistatic layer having a higher electrical conductivity than the insulating film, wherein the antistatic layer is located between the outer surface of the element body and the inner surface of the insulating film, and the antistatic layer is discontinuous between the first base electrode and the second base electrode. [Effects of the Invention]

[0006] It is possible to prevent static electricity from accumulating on the outer surface of the insulating film. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view of an electronic component. [Figure 2] FIG. 2 is a cross-sectional view taken along line 2-2 in FIG. [Figure 3] FIG. 3 is an enlarged cross-sectional view of the antistatic layer and its vicinity. [Figure 4] FIG. 4 is an explanatory diagram of the manufacturing process of the electronic component. [Figure 5] FIG. 5 is an explanatory diagram of the first coating application step. [Figure 6] FIG. 6 is an explanatory diagram of the second coating application step. DETAILED DESCRIPTION OF THE INVENTION

[0008] <One embodiment of the electronic component> An embodiment of an electronic component will be described below with reference to the drawings. Note that the drawings may show components enlarged to facilitate understanding. The dimensional proportions of the components may differ from those in the actual drawings or from those in other drawings.

[0009] (Overall structure) As shown in FIG. 1, the electronic component 10 is, for example, a surface-mount multilayer ceramic capacitor that is mounted on a circuit board or the like.

[0010] The electronic component 10 includes an element body 20. The element body 20 is generally rectangular prism-shaped and has a central axis CA. In the following description, an axis extending along the central axis CA is referred to as a first axis X. One of the axes perpendicular to the first axis X is referred to as a second axis Y. An axis perpendicular to the first axis X and the second axis Y is referred to as a third axis Z. One of the directions along the first axis X is referred to as a first positive direction X1, and the direction along the first axis X opposite to the first positive direction X1 is referred to as a first negative direction X2. One of the directions along the second axis Y is referred to as a second positive direction Y1, and the direction along the second axis Y opposite to the second positive direction Y1 is referred to as a second negative direction Y2. One of the directions along the third axis Z is referred to as a third positive direction Z1, and the direction along the third axis Z opposite to the third positive direction Z1 is referred to as a third negative direction Z2.

[0011] The outer surface of the element body 20 has six flat surfaces. The term "surface" of the element body 20 refers to a surface that can be observed when the entire element body 20 is observed. In other words, even if there are minute irregularities or steps that can only be seen by magnifying a portion of the element body 20 with a microscope, the surface is still referred to as a "flat surface" or a "curved surface." The six flat surfaces face in different directions. The six flat surfaces are a first end face 21A facing the first positive direction X1, a second end face 21B facing the first negative direction X2, a first side face 21C facing the second positive direction Y1, a second side face 21D facing the second negative direction Y2, an upper face 21E facing the third positive direction Z1, and a lower face 21F facing the third negative direction Z2.

[0012] The dimension of element body 20 along first axis X is greater than the dimension along third axis Z. Furthermore, the dimension of element body 20 along first axis X is greater than the dimension along second axis Y. The material of element body 20 is a dielectric ceramic. Specifically, the material of element body 20 has BaTiO3 as its main component. Alternatively, the material of element body 20 may have CaTiO3, SrTiO3, CaZrO3, or the like as its main component. Furthermore, the material of element body 20 may contain, as a secondary component, a Mn compound, a Co compound, a Si compound, a rare earth compound, or the like.

[0013] As shown in FIG. 2, the electronic component 10 includes two first internal electrodes 40A and two second internal electrodes 40B. The first internal electrodes 40A and the second internal electrodes 40B are embedded inside the element body 20. The material of the first internal electrodes 40A is a conductive material. The material of the first internal electrodes 40A further contains a metal such as Ni, Cu, Ag, Au, Pt, Sn, or Pd, or an alloy containing these metals. Specifically, the material of the first internal electrodes 40A is Ni. The material of the second internal electrodes 40B is the same as the material of the first internal electrodes 40A.

[0014] The first internal electrode 40A has a rectangular plate shape. The main surface of the first internal electrode 40A is perpendicular to the second axis Y. The second internal electrode 40B has the same rectangular plate shape as the first internal electrode 40A. The main surface of the second internal electrode 40B is perpendicular to the second axis Y, similar to the first internal electrode 40A.

[0015] The dimension of the first internal electrode 40A in the direction along the first axis X is smaller than the dimension of the element body 20 in the direction along the first axis X. Furthermore, as shown in Fig. 1, the dimension of the first internal electrode 40A in the direction along the third axis Z is approximately one-third of the dimension of the element body 20 in the direction along the third axis Z. Although not shown, the dimension of the second internal electrode 40B in the direction along the third axis Z is the same as that of the first internal electrode 40A.

[0016] 2, the first internal electrodes 40A and the second internal electrodes 40B are positioned alternately in the direction along the second axis Y. That is, they are arranged in the order of the first internal electrode 40A, the second internal electrode 40B, the first internal electrode 40A, and the second internal electrode 40B in the second positive direction Y1. In this embodiment, the distances between the internal electrodes in the direction along the second axis Y are equal.

[0017] As shown in FIG. 1 , the two first internal electrodes 40A and the two second internal electrodes 40B are both located at the center of the element body 20 in the direction along the third axis Z. On the other hand, as shown in FIG. 2 , the first internal electrode 40A is located closer to the first positive direction X1. The second internal electrode 40B is located closer to the first negative direction X2. Specifically, the end of the first internal electrode 40A on the first positive direction X1 side coincides with the end of the element body 20 on the first positive direction X1 side. The end of the first internal electrode 40A on the first negative direction X2 side is located inside the element body 20 and does not reach the end of the element body 20 on the first negative direction X2 side. On the other hand, the end of the second internal electrode 40B on the first negative direction X2 side coincides with the end of the element body 20 on the first negative direction X2 side. The end of the second internal electrode 40B on the side in the first positive direction X1 is located inside the element body 20 and does not reach the end of the element body 20 on the side in the first positive direction X1.

[0018] 2, the electronic component 10 has a first insulating film 51A and a second insulating film 51B as the insulating film 50. Hereinafter, when there is no need to distinguish between the first insulating film 51A and the second insulating film 51B, they will be simply referred to as the insulating film 50.

[0019] As shown in FIG. 1, the first insulating film 51A partially covers the outer surface of the element body 20. Specifically, the first insulating film 51A covers the entire upper surface 21E. The first insulating film 51A covers approximately half of the area of ​​each of the first side surface 21C, the second side surface 21D, the first end surface 21A, and the second end surface 21B on the third positive direction Z1 side. More specifically, the edge of the first insulating film 51A on each surface has a generally arc-like shape that convex toward the third negative direction Z2. The first insulating film 51A is mainly made of insulating glass.

[0020] The second insulating film 51B partially covers the outer surface of the element body 20. Specifically, the second insulating film 51B covers the entire lower surface 21F. The second insulating film 51B covers approximately half of the area of ​​each of the first side surface 21C, the second side surface 21D, the first end surface 21A, and the second end surface 21B on the third negative direction Z2 side. More specifically, the edge of the second insulating film 51B on each surface has a generally arc-like shape that convex toward the third positive direction Z1. The material of the second insulating film 51B is the same as that of the first insulating film 51A. That is, the main material of the second insulating film 51B is insulating glass.

[0021] The second insulating film 51B covers a part of the surface of the first insulating film 51A on the first side surface 21C and the second side surface 21D. Specifically, the second insulating film 51B covers the vicinity of the tip of the convex edge of the first insulating film 51A. Therefore, this part has a two-layer structure of the second insulating film 51B and the first insulating film 51A.

[0022] The second insulating film 51B is separated from the first insulating film 51A at the first end face 21A and the second end face 21B. As a result, the first internal electrode 40A is exposed from the second insulating film 51B and the first insulating film 51A on the first end face 21A. Furthermore, the second internal electrode 40B is exposed from the second insulating film 51B and the first insulating film 51A on the second end face 21B.

[0023] As shown in FIG. 2, the electronic component 10 includes a first external electrode 60A and a second external electrode 60B. The first external electrode 60A includes a first base electrode 61A and a first metal layer 62A. The first base electrode 61A is laminated on the first insulating film 51A and the second insulating film 51B in a portion of the outer surface of the element body 20, including the first end face 21A. Specifically, the first base electrode 61A covers the entire area of ​​the first end face 21A of the element body 20. The first base electrode 61A also covers a portion of the top face 21E, bottom face 21F, first side face 21C, and second side face 21D of the element body 20 on the first positive direction X1 side. In other words, the first base electrode 61A is a five-sided electrode. In this embodiment, the material of the first base electrode 61A is a mixture of Cu and glass.

[0024] The first metal layer 62A covers the first base electrode 61A from the outside. Therefore, the first metal layer 62A is laminated on the first base electrode 61A. Although not shown in the drawings, the first metal layer 62A has a two-layer structure consisting of, in order from the first base electrode 61A side, a nickel layer and a tin layer.

[0025] The second external electrode 60B includes a second base electrode 61B and a second metal layer 62B. The second base electrode 61B covers the outer surfaces of the first insulating film 51A and the second insulating film 51B at a location separate from the first base electrode 61A. Specifically, the second base electrode 61B is stacked on the first insulating film 51A and the second insulating film 51B in a portion of the outer surface of the element body 20, including the second end face 21B. The second base electrode 61B covers the entire area of ​​the second end face 21B of the element body 20. The second base electrode 61B also covers a portion of the upper surface 21E, the lower surface 21F, the first side face 21C, and the second side face 21D on the first negative direction X2 side. In other words, the second base electrode 61B is a five-sided electrode. In this embodiment, the material of the second base electrode 61B is the same as the material of the first external electrode 60A. That is, the material of the second base electrode 61B is a mixture of Cu and glass.

[0026] The second metal layer 62B externally covers the second base electrode 61B. Therefore, the second metal layer 62B is laminated on the second base electrode 61B. Specifically, the second metal layer 62B has a two-layer structure of nickel plating and tin plating, similar to the first metal layer 62A.

[0027] The second external electrode 60B does not reach the first external electrode 60A on the first side surface 21C, the second side surface 21D, the top surface 21E, and the bottom surface 21F, and is spaced apart from the first external electrode 60A in the direction along the first axis X. In addition, the first external electrode 60A and the second external electrode 60B are not stacked in the central portions of the first side surface 21C, the second side surface 21D, the top surface 21E, and the bottom surface 21F of the element body 20 in the direction along the first axis X, and the insulating film 50 is exposed. Note that in FIGS. 1 and 2, the first external electrode 60A and the second external electrode 60B are shown by two-dot chain lines.

[0028] (Antistatic layer) As shown in FIG. 3, the electronic component 10 includes an antistatic layer 70. The antistatic layer 70 is not shown in FIG. 2. Furthermore, in FIG. 3, the first insulating film 51A and the second insulating film 51B are not distinguished from each other and are illustrated as an integrated insulating film 50. The antistatic layer 70 is located between the outer surface of the element body 20 and the inner surface of the insulating film 50. As described below, the antistatic layer 70 is formed by applying a functional material ink, which is used in the manufacture of semiconductors and the like, to the element body 20 by inkjet printing. The antistatic layer 70 has a polka dot pattern over substantially the entire outer surface of the element body 20. Therefore, the antistatic layer 70 is discontinuous between the first base electrode 61A and the second base electrode 61B. The discontinuity can be confirmed as follows. First, a cross section of the element body 20 in a direction perpendicular to the outer surface is imaged or observed using a transmission electron microscope. It is then confirmed that the antistatic layer 70 is separated into two or more layers spaced apart by a gap of 5 nm or more. Similarly, antistatic layer 70 is discontinuous if there are three or more cross sections where antistatic layer 70 is separated.

[0029] The material of the antistatic layer 70 contains one or more elements selected from Ag, Cu, Ni, Sn, Au, and Pt. In this embodiment, the antistatic layer 70 is formed from a functional material ink containing Ag powder. Therefore, the material of the antistatic layer 70 is primarily composed of Ag. Furthermore, because the insulating film 50 is made of glass, the antistatic layer 70 has a higher electrical conductivity than the insulating film 50. As a result, the volume resistivity of the entire coating covering the outer surface of the element 20, including the insulating film 50 and the antistatic layer 70, is much higher than the volume resistivity of Ag, which is the primary component of the antistatic layer 70. This also explains why the antistatic layer 70 is discontinuous.

[0030] Here, the direction perpendicular to the outer surface of the insulating film 50 at any point P in the portion covered with the antistatic layer 70 is defined as the thickness direction Td at the point P. In the thickness direction Td at the point P, the ratio of the dimension TA of the antistatic layer 70 to the dimension TG of the insulating film 50 is 0.05 or more and 0.20 or less. Specifically, in FIG. 3 , in the thickness direction Td at the point P, the ratio of the dimension TA of the antistatic layer 70 to the dimension TG of the insulating film 50 is 0.15. Furthermore, in the thickness direction Td at the point P, the dimension TG of the insulating film 50 is 10 nm or more and 500 nm or less. Specifically, the minimum value of the dimension TG throughout the insulating film 50 is 90.4 nm. The maximum value of the dimension TG of the insulating film 50 is 176.8 nm.

[0031] (Regarding the manufacturing method of electronic components) 4, the method for manufacturing electronic component 10 includes a substrate preparation step S1, an antistatic layer printing step S2, a first coating application step S3, and a second coating application step S4. The method also includes a conductor application step S5, a curing step S6, and a plating step S7.

[0032] First, in forming the element body 20, in the element body preparation step S1, a rectangular parallelepiped element body 20 having six flat surfaces is prepared. For example, first, a plurality of ceramic sheets that will become the element body 20 are prepared. The sheets are thin plates. A conductive paste that will become the first internal electrode 40A is laminated on the sheets. A ceramic sheet that will become the element body 20 is laminated on the laminated paste. A conductive paste that will become the second internal electrode 40B is laminated on the sheet. In this manner, the ceramic sheets and conductive paste are laminated. Then, by cutting to a predetermined size, an unfired laminate is formed. Thereafter, the unfired laminate is fired at a high temperature to form the element body 20.

[0033] After the element preparation step S1, an antistatic layer printing step S2 is performed. In the antistatic layer printing step S2, a functional material ink containing metal powder is printed as the raw material for the antistatic layer 70 on the outer surface of the element 20 formed in the element preparation step S1. The method for printing the functional material ink is a so-called inkjet printing method. The materials contained in the functional material ink can be determined in accordance with known manufacturing methods, such as those described in JP 2021-024992 A. Specifically, the functional material ink contains one or more elements selected from Ag, Cu, Ni, Sn, Au, and Pt. In this embodiment, the functional material ink is primarily composed of Ag. In the antistatic layer printing step S2, the antistatic layer 70 is applied in dots spaced at intervals of 5 nm or more over substantially the entire outer surface of the element 20.

[0034] Next, a first coating application step S3 is performed. As shown in FIG. 5, in the first coating application step S3, a coating 82 containing a metal alkoxide is applied to the third positive direction Z1 side of the element body 20. The coating 82 is a sol in a liquid state. Therefore, when the coating 82 is dried, it becomes a gel that is more viscous than a sol. When the gel is further dried, it solidifies.

[0035] In the first coating application step S3, first, a coating 82 is prepared in a reaction vessel 81. Then, an adhesive plate is attached to the third negative direction Z2 side of the element body 20 to hold the element body 20. Note that the adhesive plate is not shown in FIG. 5 . Next, the element body 20 is oriented so that the third positive direction Z1 side faces the coating 82 in the reaction vessel 81. Approximately one-third of the element body 20 on the third positive direction Z1 side is immersed in the coating 82. As a result, the coating 82 is applied to each of the first end face 21A, the second end face 21B, the first side face 21C, and the second side face 21D of the element body 20 so that the edges of the coating 82 form a substantially arc-shaped edge. More specifically, the coating 82 is applied so that the coating shape becomes more convex in the third positive direction Z1 as it gets farther from the corners of the element body 20. Furthermore, the edges of the areas covered by the coating 82 on the first end face 21A and the second end face 21B are located closer to the third positive direction Z1 than the center of the element body 20 in the direction along the third axis Z. The edges of the areas covered by the coating 82 on the first side face 21C and the second side face 21D are located closer to the third negative direction Z2 than the center of the element body 20 in the direction along the third axis Z. Thereafter, the coating 82 applied to the element body 20 is dried.

[0036] Next, the second coating application step S4 is performed. As shown in FIG. 6, in the second coating application step S4, a coating 82 containing metal alkoxide is applied to the third negative direction Z2 side of the element body 20. Specifically, the element body 20 is held by attaching an adhesive plate to the third positive direction Z1 side of the element body 20. Note that the adhesive plate is not shown in FIG. 6. Next, the element body 20 is positioned so that the third negative direction Z2 side faces the coating 82 in the reaction vessel 81. Note that the reaction vessel 81 and the coating 82 used in the second coating application step S4 are the reaction vessel 81 and the coating 82 used in the first coating application step S3. Approximately one-third of the element body 20 on the third positive direction Z1 side is immersed in the coating 82. The coating 82 is applied to each of the first end face 21A, the second end face 21B, the first side face 21C, and the second side face 21D of the element body 20 so that the edge of the coating 82 has a substantially arcuate shape. More specifically, the coating 82 is applied so that the farther the portion of the element body 20 is from the corner, the more convex it becomes in the third negative direction Z2. Furthermore, the edges of the area covered by the coating 82 on the first end face 21A and the second end face 21B are located closer to the third negative direction Z2 than the center of the element body 20 in the direction along the third axis Z. The edges of the area covered by the coating 82 on the first side face 21C and the second side face 21D are located closer to the third positive direction Z1 than the center of the element body 20 in the direction along the third axis Z. The coating 82 applied to the element body 20 is then dried. As a result, as shown in FIG. 1, parts of the element body 20, the first internal electrode 40A, and the second internal electrode 40B are exposed to the outer surface.

[0037] Next, a conductor application step S5 is performed. In the conductor application step S5, first, a conductor paste containing a metal alkoxide is applied to a portion of the element body 20 on the first positive direction X1 side, including the entire area of ​​the first end face 21A. The conductor paste is in a sol state. The conductor paste applied to the element body 20 is then dried. Next, the conductor paste is applied to a portion of the element body 20 on the second negative direction Y2 side, including the entire area of ​​the second end face 21B. The conductor paste applied to the element body 20 is then dried. As a result, the sol-state conductor paste applied to the first end face 21A and the second end face 21B becomes a gel.

[0038] Next, a curing step S6 is performed. Specifically, in the curing step S6, the element body 20 to which the coating 82 and the conductive paste have been applied is heated. In this embodiment, the element body 20 to which the conductive paste has been applied is heated in a nitrogen atmosphere. This causes water and polymer to evaporate from the gel coating 82, hardening the coating 82 that covers part of the outer surface of the element body 20. In other words, a glass film is fired as the insulating film 50. Furthermore, the conductive paste applied to the outer surface of the element body 20 is hardened. In other words, the first base electrode 61A and the second base electrode 61B are fired.

[0039] Next, a plating step S7 is performed. In the plating step S7, the first base electrode 61A and the second base electrode 61B are immersed in a plating solution to perform electroplating. In the plating step S7, a first metal layer 62A is formed on the surface of the first base electrode 61A. In addition, in the plating step S7, a second metal layer 62B is formed on the surface of the second base electrode 61B. Although not shown, the first metal layer 62A and the second metal layer 62B are electroplated with two types of metal, nickel and tin, to form a two-layer structure. In this manner, the electronic component 10 is formed.

[0040] (Effects of this embodiment) (1) In the above embodiment, the antistatic layer 70 is located between the outer surface of the element body 20 and the inner surface of the portion of the insulating film 50 that is exposed to the outside. As a result, even if the insulating film 50 is made of glass and therefore has a high electrical resistance, the electrical resistance of the entire coating that covers the outer surface of the element body 20, including the insulating film 50 and each antistatic layer 70, is low enough to allow static electricity to diffuse. As a result, static electricity is less likely to accumulate on the outer surface of the insulating film 50, even if the insulating films 50 of multiple electronic components 10 rub against each other or the insulating film 50 of an electronic component 10 rubs against another object.

[0041] (2) In the above embodiment, the antistatic layer 70 is discontinuous between the first base electrode 61A and the second base electrode 61B. This prevents a short circuit between the first base electrode 61A and the second base electrode 61B even if a portion of the antistatic layer 70 is in contact with each base electrode or each internal electrode.

[0042] (3) In the above embodiment, the material of the antistatic layer 70 includes one or more metals selected from Ag, Cu, Ni, Sn, Au, and Pt. These metals are suitable as materials for the antistatic layer 70, which suppress the generation of static electricity.

[0043] (4) According to the above embodiment, at any point P on the outer surface of the element body 20 covered with the antistatic layer 70, the ratio of the dimension TA of the antistatic layer 70 in the thickness direction Td to the dimension TG of the insulating film 50 in the thickness direction Td is 0.05 or more and 0.20 or less. When the ratio is within this range, static electricity charged on the surface of the insulating film 50 easily reaches the antistatic layer 70. On the other hand, it is possible to prevent the electrical resistance value of the entire coating covering the outer surface of the element body 20, including the insulating film 50 and the antistatic layer 70, from becoming too small. In other words, it is possible to ensure sufficient insulation properties for the entire coating covering the outer surface of the element body 20.

[0044] (5) In the above embodiment, at any point P of the portion of the outer surface of the element body 20 covered by the antistatic layer 70, the dimension TG of the insulating film 50 covering the antistatic layer 70 is 10 nm or more and 500 nm or less. If the dimension TG of the insulating film 50 is less than 10 nm, it is difficult to protect the element body 20 from physical impact. If the dimension TG of the insulating film 50 is greater than 500 nm, the distance from the outer surface to the antistatic layer 70 becomes large, making it difficult to suppress the generation of static electricity. Therefore, by having the dimension TG of the insulating film 50 within the above numerical range, it is possible to protect the element body 20 from physical impact while easily suppressing the accumulation of static electricity in the portion of the insulating film 50 exposed to the outside.

[0045] (6) In the above embodiment, the insulating film 50 does not contain Ag. Therefore, even when a voltage is applied between the first external electrode 60A and the second external electrode 60B, the metal components in the insulating film 50 do not migrate. In other words, abnormal deposition of metal on the surface of the insulating film 50 can be prevented.

[0046] <Example of change> The above-described embodiment and the following modified examples can be implemented in combination with each other to the extent that no technical contradiction occurs.

[0047] (Examples of changes to the overall configuration) The electronic component 10 is not limited to a multilayer ceramic capacitor, but may be, for example, a negative temperature coefficient thermistor component or an inductor component.

[0048] The material of the element body 20 is not limited to the examples in the above embodiments, but may be a composite of resin and metal powder. The shape of the element body 20 is not limited to the example in the above embodiment. For example, the element body 20 may be a polygonal columnar shape other than a quadrangular columnar shape having a central axis CA. The element body 20 may also be the core of a wire-wound inductor component. For example, the core may have a so-called drum core shape. Specifically, the core may have a columnar winding core portion and flange portions provided at each end of the winding core portion.

[0049] The configurations of the first internal electrode 40A, such as the material and shape, and the second internal electrode 40B, such as the material and shape, are not limited to the examples in the above embodiment, as long as electrical conduction with the corresponding first external electrode 60A and second external electrode 60B is ensured. Furthermore, the number of first internal electrodes 40A and second internal electrodes 40B does not matter, and the number of internal electrodes may be one, or three or more. In other words, the configuration of the internal electrodes can be changed as appropriate depending on the performance, etc., required of the electronic component 10.

[0050] The configuration of the first base electrode 61A is not limited to the example of the above embodiment. Specifically, any material may be used as long as it allows the first metal layer 62A to be laminated on the first base electrode 61A in the plating step S7. For example, the first base electrode 61A may be made of only silver, or may also contain copper. For example, the material of the first base electrode 61A may be a mixture of resin and metal. Furthermore, the first base electrode 61A and the second base electrode 61B may be made of different materials. This also applies to the second base electrode 61B.

[0051] The configuration of the first external electrode 60A is not limited to the example of the above embodiment. For example, the first metal layer 62A does not have to have a two-layer structure. Furthermore, the first external electrode 60A may be composed of only the first base electrode 61A. This also applies to the second external electrode 60B.

[0052] The location of the first external electrode 60A is not limited to the example in the above embodiment. For example, the first external electrode 60A may be disposed only on the first end surface 21A and the upper surface 21E. The same applies to the second external electrode 60B.

[0053] The configuration of the insulating film 50 is not limited to the example of the above embodiment. For example, the areas covered by the first insulating film 51A and the second insulating film 51B may be changed as appropriate depending on the shape of the element body 20, the positions of the first external electrode 60A and the second external electrode 60B, etc.

[0054] The configuration of the first insulating film 51A, such as its shape, is not limited to the example of the above embodiment. For example, the edge of the first insulating film 51A may be linear. The shape of the edge of the first insulating film 51A may vary depending on the physical properties of the cover 82, the method of applying the insulating film 50 to the element body 20, and the like. The same applies to the second insulating film 51B.

[0055] The areas covered by the first insulating film 51A and the second insulating film 51B are not limited to those in the above embodiment. For example, the second insulating film 51B does not have to cover the vicinity of the edges of the first insulating film 51A on the first side surface 21C and the second side surface 21D.

[0056] In the portion of the insulating film 50 that is covered with the first base electrode 61A, the glass contained in the insulating film 50 may diffuse into the first base electrode 61A, thereby integrating the insulating film 50 and the first base electrode 61A. The same applies to the second base electrode 61B.

[0057] The material of the insulating film 50 is not limited to the example described in the above embodiment. For example, the glass is not limited to silicon dioxide and may be a multi-component oxide containing Si, such as B-Si, Si-Zn, Zr-Si, or Al-Si oxides. The glass may also be a multi-component oxide containing an alkali metal and Si, such as Al-Si, Na-Si, or Li-Si oxides. Furthermore, the glass may also be a multi-component oxide containing an alkaline earth metal and Si, such as Mg-Si, Ca-Si, Ba-Si, or Sr-Si. The insulating film 50 does not have to be glass. For example, the insulating film 50 may be made of an inorganic oxide, ceramic, or the like. The first insulating film 51A and the second insulating film 51B may be made of different materials.

[0058] The material of the first base electrode 61A is not limited to the example in the above embodiment. For example, the material of the first base electrode 61A may be a mixture of resin and metal. This also applies to the second base electrode 61B. Furthermore, the first base electrode 61A and the second base electrode 61B may be made of different materials.

[0059] (Examples of changes to the antistatic layer) The material of the antistatic layer 70 is not limited to the example in the above embodiment. For example, the material of the antistatic layer 70 does not have to contain one or more elements selected from Ag, Cu, Ni, Sn, Au, and Pt. Even if the material of the antistatic layer 70 does not contain these elements, the effect described in (1) can be obtained as long as the electrical conductivity of the antistatic layer 70 is higher than that of the insulating film 50. Furthermore, the material of the antistatic layer 70 may be a precursor of a complex or metal salt containing the above elements. For example, in the above embodiment, the antistatic layer 70 may be a functional material ink made of a complex or metal salt containing Ag.

[0060] The material of the antistatic layer 70 may contain one or more metal oxides selected from SnO2, ZnO, IrO2, RuO2, and TiO2. In this case, the same effect as that described in (2) can be obtained.

[0061] The shape of each antistatic layer 70 is not important. As long as the antistatic layer 70 is discontinuous between the first base electrode 61A and the second base electrode 61B, the shape of each antistatic layer 70 may be any shape. Furthermore, the shapes of the antistatic layers 70 do not need to be uniform. For example, the shapes of each antistatic layer 70 may be randomly different.

[0062] In the above embodiment, the ratio of the dimension TA of the antistatic layer 70 to the dimension TG of the insulating film 50 in the thickness direction Td at any point P may be smaller than 0.05 or larger than 0.20. Even in this case, the generation of static electricity on the surface of the insulating film 50 can be suppressed.

[0063] In the above embodiment, the dimension TG of the insulating film 50 in the thickness direction Td at any point P may be less than 10 nm or greater than 500 nm. Even in these cases, the generation of static electricity can be suppressed by adjusting the dimension TA of the antistatic layer 70 in the thickness direction Td at the arbitrary point P.

[0064] (Examples of changes to manufacturing methods) In the antistatic layer printing step S2, the method for forming the antistatic layer 70 is not limited to the example in the above embodiment. It is sufficient that the antistatic layer 70 is discontinuous between the first base electrode 61A and the second base electrode 61B after manufacturing.

[0065] In the first coating application step S3 and the second coating application step S4, a solution containing a precursor for generating a metal alkoxide may be used instead of a metal alkoxide. For example, a metal complex or acetate, which is a metal alkoxide precursor, may be used. Examples of metal complexes include acetylacetonates such as lithium acetylacetonate, titanium(IV) oxyacetylacetonate, titanium diisopropoxide bis(acetylacetonate), zirconium(IV) trifluoroacetylacetonate, zirconium(IV) acetylacetonate, aluminum acetylacetonate, aluminum(III) acetylacetonate, calcium(II) acetylacetonate, and zinc(II) acetylacetonate. Examples of acetates include zirconium acetate, zirconium(IV) hydroxide acetate, and basic aluminum acetate.

[0066] The method for applying the coating 82 in the first coating application step S3 and the second coating application step S4 is not limited to the example in the above embodiment. For example, the coating 82 may be laminated on the surface of the element body 20 by printing, spin coating, or the like. The same applies to the method for applying the conductor paste in the conductor application step S5.

[0067] The curing step S6 is not limited to a step of simultaneously curing the insulating film 50 and the conductive paste. For example, if the conductive paste is a material that is cured by ultraviolet light irradiation, heating may be performed as a step of curing the insulating film 50, and ultraviolet light may be used as a step of curing the conductive paste.

[0068] <Additional Notes> The technical concepts that can be derived from the above-described embodiments and modifications will be described below. [1] The base body and an insulating film covering the outer surface of the element body; a first base electrode covering an outer surface of the insulating film; a second base electrode covering an outer surface of the insulating film at a location separated from the first base electrode; an antistatic layer having a higher electrical conductivity than the insulating film; Equipped with An electronic component in which the antistatic layer is located between the outer surface of the element body and the inner surface of the insulating film, and the antistatic layer is discontinuous between the first base electrode and the second base electrode.

[0069] [2] The electronic component according to [1], wherein the material of the antistatic layer contains one or more elements selected from Ag, Cu, Ni, Sn, Au, and Pt.

[0070] [3] The electronic component according to [1] or [2], wherein the material of the antistatic layer includes one or more selected from SnO2, ZnO, IrO2, RuO2, and TiO2.

[0071] [4] When a direction perpendicular to an arbitrary point on the outer surface of the element body that is covered with the antistatic layer is defined as a thickness direction at that point, The electronic component according to any one of [1] to [3], wherein the ratio of the dimension of the antistatic layer to the dimension of the insulating film in the thickness direction at the arbitrary point is 0.05 or more and 0.20 or less.

[0072] [5] When a direction perpendicular to an arbitrary point on the outer surface of the element body that is covered with the antistatic layer is defined as a thickness direction at that point, The electronic component according to any one of [1] to [4], wherein the dimension of the insulating film in the thickness direction at the arbitrary point is 10 nm or more and 500 nm or less.

[0073] [6] The electronic component according to any one of [1] to [5], wherein the material of the insulating film does not contain Ag. [Explanation of symbols]

[0074] 10...Electronic components 20...Base body 40A…1st internal electrode 40B…Second internal electrode 50...insulating film 51A...First insulating film 51B...Second insulating film 61A...First base electrode 61B…Second base electrode 70...Antistatic layer 71...Electrically conductive material P...point Td: thickness direction TG...Dimensions TA...Dimensions

Claims

1. The base body and an insulating film covering the outer surface of the element body; a first base electrode covering an outer surface of the insulating film; a second base electrode covering an outer surface of the insulating film at a location separated from the first base electrode; an antistatic layer having a higher electrical conductivity than the insulating film; Equipped with the antistatic layer is located between an outer surface of the element body and an inner surface of the insulating film, and the antistatic layer is discontinuous between the first base electrode and the second base electrode; The material of the antistatic layer includes one or more selected from SnO 2 , ZnO, IrO 2 , RuO 2 and TiO 2 . Electronic components.

2. The material of the antistatic layer contains one or more elements selected from Ag, Cu, Ni, Sn, Au, and Pt. The electronic component according to claim 1 .

3. When a direction perpendicular to an arbitrary point on the outer surface of the element body that is covered with the antistatic layer is defined as a thickness direction at that point, The ratio of the dimension of the antistatic layer to the dimension of the insulating film in the thickness direction at the arbitrary point is 0.05 or more and 0.20 or less. The electronic component according to claim 1 .

4. When a direction perpendicular to an arbitrary point on the outer surface of the element body that is covered with the antistatic layer is defined as a thickness direction at that point, The dimension of the insulating film in the thickness direction at the arbitrary point is 10 nm or more and 500 nm or less. The electronic component according to claim 1 .

5. The material of the insulating film does not contain Ag. The electronic component according to claim 1 .

Images