Film formation method

Abstract

To provide a film deposition method and film deposition apparatus, capable of forming uniform in-plane distribution by a plurality of elements included in an alloy target.SOLUTION: A film deposition method capable of depositing a film including an alloy film including two or more kinds of elements on the surface of a substrate by a film deposition target formed of the alloy film comprises steps of: (a) arranging the film deposition target and a distribution improvement target so as to face the substrate; and (b) simultaneously or alternately switching and sputtering the film deposition target and the distribution improvement target to deposit the film on the substrate. The (b) step comprises supplying more heterogeneous elements from the distribution improvement target to a portion having a small heterogeneous element distribution against a portion having a large heterogeneous element distribution when depositing the heterogeneous element sputtered from the distribution improvement target on the substrate by the film deposition target.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present disclosure relates to a film formation method. By law Regarding. [Background technology]

[0002] For example, Patent Document 1 discloses a film formation apparatus that prevents uneven coating amounts from occurring at the periphery of a substrate during sputtering. Patent Document 2 discloses a film formation apparatus and a film formation method that can improve the uniformity of film quality and thereby increase productivity. Patent Document 3 discloses a sputtering apparatus that can form a film with excellent uniformity in the in-plane distribution of film thickness and composition. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-109995 [Patent Document 2] International Publication No. 2007 / 066511 [Patent Document 3] Patent No. 5587822 Summary of the Invention [Problem to be solved by the invention]

[0004] This disclosure ,Ta A film forming method and a film forming apparatus are provided that can form a uniform in-plane distribution among a plurality of elements contained in a target. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, membraneA film formation method for forming a film containing the element contained in the film formation target on a surface of a substrate by using a formation target, the method comprising: (a) a step of arranging the film formation target and a distribution improvement target so as to face the substrate; and (b) a step of simultaneously or alternately sputtering the film formation target and the distribution improvement target to form the film on the substrate, wherein the distribution improvement target forms a distribution improvement film containing a non-uniform element, among the plurality of elements, that will be distributed non-uniformly on the surface when formed on the substrate by the film formation target, the distribution improvement target has a shape that gradually becomes thicker from the end toward the center in the longitudinal direction, In the step (b), when the non-uniform elements sputtered from the distribution improvement target are deposited on the substrate by the film formation target, the non-uniform elements are supplied in larger amounts from the distribution improvement target to a portion where the non-uniform elements are less distributed than to a portion where the non-uniform elements are more distributed. [Effects of the Invention]

[0006] This disclosure ,Ta A film forming method and a film forming apparatus are provided that can form a uniform in-plane distribution among a plurality of elements contained in a target. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view of an example of a semiconductor manufacturing apparatus according to this embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view showing an example of a wafer transport path in the semiconductor manufacturing apparatus according to this embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view of an example of a film forming apparatus according to this embodiment. [Figure 4] FIG. 4 is a schematic plan view showing the arrangement of four holders and four magnets in an example of a film forming apparatus according to this embodiment. [Figure 5] FIG. 5 is a diagram illustrating the distribution of angles at which sputtered elements are released from the target surface in a film forming apparatus. [Figure 6] FIG. 6 is a diagram illustrating the distribution of angles at which elements sputtered from a target are released from the target surface in a film forming apparatus. [Figure 7] FIG. 7 is a flowchart illustrating a first distribution improvement method for an example of the film forming apparatus according to this embodiment. [Figure 8] FIG. 8 is a diagram illustrating a first distribution improvement method for an example of a film forming apparatus according to this embodiment. [Figure 9] FIG. 9 is a diagram illustrating a first distribution improvement method for an example of a film forming apparatus according to this embodiment. [Figure 10] FIG. 10 is a diagram illustrating the evaluation results of the first distribution improvement method for the example film forming apparatus according to this embodiment. [Figure 11] FIG. 11 is a flowchart illustrating a second distribution improvement method for an example of the film forming apparatus according to this embodiment. [Figure 12] FIG. 12 is a diagram illustrating a second distribution improvement method for an example of the film forming apparatus according to this embodiment. [Figure 13] FIG. 13 is a diagram illustrating a third distribution improvement method for an example of a film forming apparatus according to this embodiment. [Figure 14] FIG. 14 is a diagram illustrating a third distribution improvement method for an example of a film forming apparatus according to this embodiment. [Figure 15] FIG. 15 is a diagram illustrating a fourth distribution improvement method for an example of a film forming apparatus according to this embodiment. [Figure 16] FIG. 16 is a diagram illustrating a fourth distribution improvement method for an example of a film forming apparatus according to this embodiment. [Figure 17] FIG. 17 is a diagram illustrating a fifth distribution improvement method for an example of a film forming apparatus according to this embodiment. [Figure 18] FIG. 18 is a diagram illustrating a sixth distribution improvement method for an example of a film forming apparatus according to this embodiment. [Figure 19] FIG. 19 is a diagram illustrating a sixth distribution improvement method for an example of a film forming apparatus according to this embodiment. [Figure 20]FIG. 20 is a diagram illustrating a seventh distribution improvement method for an example of a film forming apparatus according to this embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted.

[0009] In the directions of parallel, right-angle, orthogonal, horizontal, vertical, up / down, left / right, etc., deviations are permitted to the extent that they do not impair the effects of the embodiments. The shape of the corners is not limited to right angles and may be rounded like an arch. Parallel, right-angle, orthogonal, horizontal, and vertical may include approximately parallel, approximately right-angle, approximately orthogonal, approximately horizontal, and approximately vertical.

[0010] <Semiconductor manufacturing equipment 1> FIG. 1 is a schematic cross-sectional view of a semiconductor manufacturing apparatus 1, which is an example of a semiconductor manufacturing apparatus according to this embodiment. The semiconductor manufacturing apparatus 1 performs a plurality of processes on a substrate W, such as desired processes such as etching, film formation, and ashing. The semiconductor manufacturing apparatus 1 includes a processing section 2, a loading / unloading section 3, and a control section 4. The substrate W is not particularly limited, but may be, for example, a semiconductor wafer. Hereinafter, the semiconductor wafer may be simply referred to as a wafer.

[0011] The loading / unloading unit 3 loads and unloads substrates, such as wafers, into and out of the processing unit 2. The processing unit 2 includes a plurality of process modules that perform desired vacuum processing on wafers. The processing unit 2 according to this embodiment includes ten process modules PM1 to PM10. Wafers are serially transferred (sequentially transferred) to the plurality of process modules PM1 to PM10 by a first transfer device 11.

[0012] The first transfer device 11 includes a plurality of transfer modules TM1 to TM5. The transfer modules TM1 to TM5 include containers 30a, 30b, 30c, 30d, and 30e, respectively, which are hexagonal in plan view and maintained under vacuum. The transfer modules TM1 to TM5 also include articulated transfer mechanisms 31a, 31b, 31c, 31d, and 31e, which are provided in the containers 30a, 30b, 30c, 30d, and 30e, respectively.

[0013] Between the transfer mechanisms 31a, 31b, 31c, 31d, and 31e of the transfer modules TM1 to TM5, there are provided transfer units 41, 42, 43, and 44, respectively, as transfer buffers. The containers 30a, 30b, 30c, 30d, and 30e of the transfer modules TM1 to TM5 are connected to each other to form one transfer chamber 12.

[0014] The transfer chamber 12 extends in the Y direction in the figure. Five process modules PM1 to PM10 are connected to each side of the transfer chamber 12 via openable and closable gate valves G. The gate valves G of the process modules PM1 to PM10 are opened when the transfer modules TM1 to TM5 access the process modules PM1 to PM10, and are closed when the desired processing is being performed.

[0015] The loading / unloading unit 3 is connected to one end of the processing unit 2. The loading / unloading unit 3 has an atmospheric transfer chamber 21, three load ports 22, an aligner module 23, two load lock modules LLM1 and LLM2, and a second transfer device 24. The load port 22, the aligner module 23, and the load lock modules LLM1 and LLM2 are connected to the atmospheric transfer chamber 21. The second transfer device 24 is provided inside the atmospheric transfer chamber 21.

[0016] The atmospheric transfer chamber 21 has a rectangular parallelepiped shape with its longitudinal direction in the X direction in the figure. Three load ports 22 are provided on the long side wall of the atmospheric transfer chamber 21 opposite the processing section 2. The load port 22 has a mounting table 25 and a transfer port 26. A FOUP 20, which is a substrate container that accommodates multiple wafers, is placed on the mounting table 25. The FOUP 20 on the mounting table 25 is connected to the atmospheric transfer chamber 21 in a sealed state via the transfer port 26. The aligner module 23 is connected to one of the short side walls of the atmospheric transfer chamber 21. Wafer alignment is performed in the aligner module 23.

[0017] The two load lock modules LLM1 and LLM2 enable wafer transfer between the atmospheric transfer chamber 21, which is at atmospheric pressure, and the transfer chamber 12, which is at a vacuum atmosphere, and are capable of varying the pressure between atmospheric pressure and a vacuum similar to that of the transfer chamber 12. Each of the two load lock modules LLM1 and LLM2 has two transfer ports. One of the transfer ports is connected to the long side wall of the atmospheric transfer chamber 21 on the processing unit 2 side via gate valve G2. The other transfer port is connected to the transfer chamber 12 of the processing unit 2 via gate valve G1.

[0018] The load lock module LLM1 is used to transfer wafers from the loading / unloading section 3 to the processing section 2. The load lock module LLM2 is used to transfer wafers from the processing section 2 to the loading / unloading section 3. Note that the load lock modules LLM1 and LLM2 may also be configured to perform processes such as degassing.

[0019] The second transfer device 24 in the atmospheric transfer chamber 21 has an articulated structure and transfers wafers to and from the FOUP 20 on the load port 22, the aligner module 23, and the load lock modules LLM1 and LLM2. Specifically, the second transfer device 24 removes an unprocessed wafer from the FOUP 20 on the load port 22, transfers it to the aligner module 23, and transfers the wafer from the aligner module 23 to the load lock module LLM1. The second transfer device 24 also receives a processed wafer that has been transferred from the processing unit 2 to the load lock module LLM2, and transfers it to the FOUP 20 on the load port 22. While FIG. 1 shows an example in which the second transfer device 24 has one pick for receiving a wafer, two picks may be used.

[0020] The first transfer device 11 and the second transfer device 24 constitute the transfer section of the semiconductor manufacturing equipment 1. In the processing section 2, process modules PM1, PM3, PM5, PM7, and PM9 are arranged in order from the load lock module LLM1 side on one side of the transfer chamber 12. In the processing section 2, process modules PM2, PM4, PM6, PM8, and PM10 are arranged in order from the load lock module LLM2 side on the other side of the transfer chamber 12. In the first transfer device 11, transfer modules TM1, TM2, TM3, TM4, and TM5 are arranged in order from the load lock modules LLM1 and LLM2 side.

[0021] The transfer mechanism 31a of the transfer module TM1 is accessible to the load lock modules LLM1 and LLM2, the process modules PM1 and PM2, and the transfer unit 41. The transfer mechanism 31b of the transfer module TM2 is accessible to the process modules PM1, PM2, PM3, and PM4, and the transfer units 41 and 42.

[0022] The transfer mechanism 31c of the transfer module TM3 is accessible to the process modules PM3, PM4, PM5, and PM6, as well as the transfer units 42 and 43. The transfer mechanism 31d of the transfer module TM4 is accessible to the process modules PM5, PM6, PM7, and PM8, as well as the transfer units 43 and 44. The transfer mechanism 31e of the transfer module TM5 is accessible to the process modules PM7, PM8, PM9, and PM10, as well as the transfer unit 44.

[0023] The second transfer device 24 and the transfer modules TM1 to TM5 of the first transfer device 11 are configured as shown in Fig. 1. Therefore, as shown in Fig. 2, wafers removed from FOUP 20 are serially transferred in one direction along a substantially U-shaped path P in the processing unit 2, processed in each of the process modules PM1 to PM10, and returned to FOUP 20. That is, the wafers are serially transferred in the order of process modules PM1, PM3, PM5, PM7, PM9, PM10, PM8, PM6, PM4, and PM2, and undergo the desired processing.

[0024] The semiconductor manufacturing apparatus 1 can be used, for example, to manufacture oxide semiconductor films used in flat panel displays. The manufacture of oxide semiconductor films involves a number of desired processes, such as pre-cleaning, film formation, oxidation, heating, and cooling, and each of these desired processes is performed in one of the process modules PM1 to PM10. One or more of the process modules PM1 to PM10 may also be a standby module where a wafer is kept waiting.

[0025] The control unit 4 controls each component of the semiconductor manufacturing equipment 1. The control unit 4 controls, for example, the transfer modules TM1 to TM5 (transfer mechanisms 31a to 31e), the second transfer unit 24, the process modules PM1 to PM10, the load lock modules LLM1 and LLM2, the transfer chamber 12, and the gate valves G, G1, and G2. The control unit 4 is, for example, a computer.

[0026] 3 is a schematic cross-sectional view of a film formation apparatus 100, which is an example of a film formation apparatus in a semiconductor manufacturing apparatus according to this embodiment. As shown in FIG. 3, the film formation apparatus 100 according to this embodiment is a PVD (Physical Vapor Deposition) apparatus that deposits a substance on a semiconductor wafer (hereinafter simply referred to as a substrate W), which is an example of a substrate, to form a film.

[0027] The film formation apparatus 100 includes a processing chamber 110 having an internal space 110a in which a film formation process is performed on a substrate W. The film formation apparatus 100 also includes, as components for performing a film formation process on a substrate W within the processing chamber 110, a stage mechanism 120, a target holder 130, a target cover 140, a gas supply unit 150, a gas exhaust unit 160, and a magnet mechanism 170. The film formation apparatus 100 also includes a control unit 180 that controls the operation of each component.

[0028] The film formation apparatus 100 is installed, for example, as one of the process modules PM1 to PM10 included in the semiconductor manufacturing apparatus 1. The semiconductor manufacturing apparatus 1 performs cleaning processing, etching processing, and the like on the substrate W in addition to the film formation processing.

[0029] The processing vessel 110 included in the film forming apparatus 100 is made of, for example, aluminum. The processing vessel 110 is connected to a ground potential. That is, the processing vessel 110 is grounded. The processing vessel 110 includes a transfer port 111 that connects an internal space 110a to the outside of the processing vessel 110, and a gate valve 112 that opens and closes the transfer port 111. When the gate valve 112 is open, the film forming apparatus 100 loads and unloads the substrate W through the transfer port 111 using a transfer device (not shown).

[0030] The processing vessel 110 has a processing central axis Ax that is located at the center of the film formation processing on the substrate W in the internal space 110a and extends along the vertical direction. The processing central axis Ax is set to pass through the center of the substrate W placed on the stage mechanism part 120. The processing vessel 110 also has a conical part 113 that is approximately conical in shape (for example, approximately quadrangular pyramid shape, cone shape, etc.) on the ceiling part located above the stage mechanism part 120. The processing central axis Ax is configured to pass through the center (top) of the conical part 113.

[0031] The stage mechanism 120 includes a mounting table 121 disposed in the processing vessel 110 and a support drive unit 122 that operably supports the mounting table 121. The mounting table 121 includes a substantially disk-shaped base 121a and an electrostatic chuck 121b fixed on the base 121a.

[0032] The base portion 121a is made of, for example, aluminum. The base portion 121a is fixed to the upper end of the support drive unit 122. The support drive unit 122 moves the base portion 121a, thereby disposing the electrostatic chuck 121b at a predetermined height position in the internal space 110a. The stage mechanism unit 120 may also include a temperature control mechanism (not shown) that adjusts the temperature of the base portion 121a to control the temperature of the substrate W placed on the mounting table 121.

[0033] The electrostatic chuck 121b includes a dielectric film and an electrode provided on the inner layer of the dielectric film (both not shown). A DC power supply 123 is connected to the electrode of the electrostatic chuck 121b. The electrostatic chuck 121b electrostatically attracts the substrate W placed on the upper surface of the electrostatic chuck 121b by generating an electrostatic force in the dielectric film by a DC voltage supplied to the electrode from the DC power supply 123. The center of the upper surface of the electrostatic chuck 121b (the surface on which the substrate W is placed) coincides with the processing central axis Ax.

[0034] The support drive unit 122 has a columnar support shaft 124 that holds the base unit 121a, and an operating device 125 that operates the support shaft 124. The support shaft 124 extends vertically from the internal space 110a of the processing vessel 110 through the bottom 114 to the outside of the processing vessel 110. The axis of the support shaft 124 overlaps with the processing central axis Ax.

[0035] The operating device 125 is provided outside the processing vessel 110. The operating device 125 holds the lower end of the support shaft 124. The operating device 125 rotates the support shaft 124 around the processing central axis Ax under the control of the control unit 180. The operating device 125 also moves up and down in the vertical direction. The mounting table 121 rotates and moves up and down within the processing vessel 110 by the operation of the operating device 125.

[0036] The stage mechanism 120 also includes a sealing structure 126 between the bottom 114 of the processing vessel 110 and the support shaft 124, which seals the gap while allowing the support shaft 124 to operate. As the sealing structure 126, for example, a magnetic fluid seal can be used.

[0037] The target holding unit 130 of the film forming apparatus 100 holds a plurality of targets T, which are cathode targets, at a position spaced above the mounting table 121. The film forming apparatus 100 according to this embodiment includes four target holding units 130. Each target holding unit 130 includes a metal holder 131 that holds each of the plurality of targets T, and an insulating member 132 that supports the holders 131 by fixing the outer peripheries of the plurality of holders 131.

[0038] The targets T held by each of the holders 131 are formed of a material having a substance for film formation. Each of the targets T has a rectangular flat plate shape. The film formation apparatus 100 may also include targets T made of different types of materials. For example, by switching between targets T made of multiple different materials and performing sputtering, a multilayer film can be formed in the processing chamber 110. In other words, the film formation apparatus 100 may perform simultaneous sputtering (co-sputtering) in which films are formed from multiple targets at the same time.

[0039] The film forming apparatus 100 according to this embodiment performs a film forming process in which a film containing a plurality of elements is formed on a substrate W. membrane In the present disclosure, the substrate W contains a plurality of elements. membrane Examples of compounds that form the membrane An example of forming a gallium-based compound (C1) containing indium, gallium, zinc, and oxygen will be described. membrane This is sometimes called an IGZO film. It is made of indium, gallium, zinc, and oxygen. membrane When forming the target T, at least one of the targets T is made of indium, gallium, zinc, and oxygen. membrane Let's say.

[0040] Each of the holders 131 is formed in a rectangular shape that is slightly larger than the target T in a plan view. Each of the holders 131 is fixed to the inclined surface of the conical portion 113 via an insulating member 132. Because each of the holders 131 is fixed to the inclined surface of the conical portion 113, each of the holders 131 holds the surfaces of the multiple targets T (sputtering surfaces exposed to the internal space 110a) in a state inclined with respect to the processing central axis Ax.

[0041] Furthermore, the target holding unit 130 electrically connects a power supply 133 to the targets T held by each of the holders 131. Each of the multiple power supplies 133 applies a negative DC voltage to the connected target T. Note that the power supply 133 may be a single power supply that selectively applies a voltage to each of the multiple targets T.

[0042] 4 is a schematic plan view showing the arrangement of four holders 131 and four magnets 171 of the film forming apparatus 100. As shown in FIG. 4, the target holding unit 130 has a plurality of holders 131 (and targets T) evenly arranged along an imaginary perfect circle ic centered on the processing central axis Ax. That is, the four holders 131 (and targets T) are arranged at 90-degree intervals on the imaginary perfect circle ic. Each of the four holders 131 (and targets T) is arranged such that the long side of the holder 131 extends parallel to the tangent to the imaginary perfect circle ic. Each of the four targets T is held at the same position as the holder 131 so as to face diagonally downward (see also FIG. 3).

[0043] In the following description, the four targets T may be referred to as the first target T1, the second target T2, the third target T3, and the fourth target T4, arranged clockwise from the top of the imaginary circle ic in FIG. 4. For example, when the film formation apparatus 100 sputters the first target T1 in a film formation process, the first target T1 is set as the selected target Ts, and the second target T2, the third target T3, and the fourth target T4 are set as non-selected targets Tns. The number of targets T and holders 131 in the film formation apparatus 100 is not particularly limited and may be two, three, five, or more. For example, when there are three targets T and holders 131, the film formation apparatus 100 may arrange the targets T and holders 131 at 120-degree intervals on the imaginary circle ic.

[0044] Returning to FIG. 3, the target cover unit 140 of the film formation apparatus 100 includes a shutter body 141 disposed in the processing chamber 110 and a shutter driver 142 that operably supports the shutter body 141.

[0045] The shutter body 141 is provided between the multiple targets T and the mounting table 121. The shutter body 141 is formed in a cone shape that is approximately parallel to the inclined surface of the cone-shaped portion 113 of the processing vessel 110. The shutter body 141 can face the sputtering surfaces of the multiple targets T. The shutter body 141 also has one opening 141a that is slightly larger than the target T.

[0046] The opening 141a is positioned to face one target T (selected target Ts) among the multiple targets T by the shutter driving unit 142. By positioning the opening 141a to face the selected target Ts, the shutter body 141 exposes only the selected target Ts to the substrate W on the mounting table 121. The shutter body 141 prevents the other targets T (non-selected targets Tns) from being exposed.

[0047] The shutter driver 142 includes a columnar rotation shaft 143 and a rotation unit 144 that rotates the rotation shaft 143. The axis of the rotation shaft 143 overlaps with the central processing axis Ax of the processing vessel 110. The rotation shaft 143 extends vertically, and its lower end fixes the center (vertex) of the shutter body 141. The rotation shaft 143 passes through the center of the conical portion 113 and protrudes outside the processing vessel 110.

[0048] The rotating unit 144 is provided outside the processing vessel 110, and rotates the rotating shaft 143 relative to an upper end (connector 155a) that holds the rotating shaft 143 via a rotation transmission unit (not shown). This causes the rotating shaft 143 and the shutter body 141 to rotate around the processing center axis Ax. Therefore, the target covering unit 140 adjusts the circumferential position of the opening 141a based on the control of the control unit 180, so that the opening 141a faces the selected target Ts to be sputtered.

[0049] Although the film forming apparatus 100 performs sputtering by switching between the target covering units 140, the film forming apparatus 100 may not be provided with the target covering units 140 and may perform simultaneous sputtering.

[0050] The gas supply unit 150 of the film forming apparatus 100 includes an excitation gas unit 151 provided in the conical portion 113 and supplying an excitation gas, and an oxidation gas unit 156 provided on the bottom 114 side of the processing vessel 110 and supplying an oxidation gas (hereinafter referred to as oxidation gas). Note that the film forming apparatus 100 does not need to include the oxidation gas unit 156 when oxidation of metal deposited on the substrate W is not performed.

[0051] The excitation gas unit 151 includes a pipe 152 that distributes gas outside the processing vessel 110. The excitation gas unit 151 also includes, in order from the upstream side to the downstream side of the pipe 152, a gas source 153, a flow rate controller 154, and a gas introduction unit 155.

[0052] The gas source 153 stores a gas for excitation (e.g., argon gas). The gas source 153 supplies the gas to the pipe 152. The flow rate controller 154 is, for example, a mass flow controller, and adjusts the flow rate of the gas supplied into the processing vessel 110. The gas introduction unit 155 introduces the gas from the outside to the inside of the processing vessel 110. The gas introduction unit 155 is composed of a connector 155a connected to the pipe 152 outside the processing vessel 110, and a gas passage 143a formed in the rotation shaft 143 of the target cover 140.

[0053] The oxidizing gas unit 156 includes a head member 157 that ejects an oxidizing gas (e.g., oxygen) and a rotation device 158 that rotates the head member 157. The oxidizing gas unit 156 ejects the oxidizing gas from the head member 157 toward the mounting table 121 when oxidizing a film deposited on the substrate W. An oxidizing gas pipe 159 is connected to the head member 157 outside the processing chamber 110. The pipe 159 is provided with an oxidizing gas source 1510 and a flow rate controller 1511 that adjusts the flow rate of the oxidizing gas. The rotation device 158 displaces the oxidizing gas ejection unit 157a of the head member 157 between a facing region R1 that faces the mounting surface of the mounting table 121 and a retreat region R2 that is distant from the mounting table 121.

[0054] The gas exhaust unit 160 included in the film forming apparatus 100 includes a decompression pump 161 and an adapter 162 for fixing the decompression pump 161 to the bottom 114 of the processing vessel 110. The gas exhaust unit 160 decompresses the internal space 110a of the processing vessel 110 under the control of the control unit 180.

[0055] The magnet mechanism 170 included in the film formation apparatus 100 applies a magnetic field H to each of the targets T. By applying the magnetic field H to each of the targets T, the magnet mechanism 170 induces plasma in the targets T. The magnet mechanism 170 includes a magnet 171 (cathode magnet) for each of the multiple holders 131, and an operating unit 172 that operably holds the magnet 171. The film formation apparatus 100 according to this embodiment has four magnets 171 corresponding to the four holders 131, respectively, and four operating units 172 that hold the magnets 171, respectively.

[0056] 4, the four magnets 171 are arranged so as to overlap with the respective targets T on the imaginary perfect circle i c. Note that the magnets 171 may be referred to as the first magnet 171T1, the second magnet 171T2, the third magnet 171T3, and the fourth magnet 171T4 in clockwise order according to the four arranged targets T (first target T1 to fourth target T4).

[0057] The magnets 171 are formed to have the same shape as each other. Furthermore, the magnets 171 generate magnetic forces of the same degree as each other. Specifically, the magnets 171 are each substantially rectangular in plan view. In the holding state of the operating unit 172, the long sides of the magnets 171 extend parallel to the short side direction of the rectangular target T, while the short sides of the magnets 171 extend parallel to the longitudinal direction of the rectangular target T.

[0058] A permanent magnet can be applied to each of the magnets 171. The material constituting each of the magnets 171 is not particularly limited as long as it has an appropriate magnetic force, and examples thereof include iron, cobalt, nickel, samarium, and neodymium.

[0059] Each of the magnets 171 is magnetized to have a first magnetic pole 171a on the inside (center) and a second magnetic pole 171b, which is the opposite polarity to the first magnetic pole 171a, on the outside of the first magnetic pole 171a. The second magnetic pole 171b goes around the entire circumference of the first magnetic pole 171a. In other words, in a cross-sectional view taken along the short-side or long-side direction, the magnet 171 is arranged in the order of the second magnetic pole 171b, the first magnetic pole 171a, and the second magnetic pole 171b.

[0060] The magnets 171 arranged at adjacent positions along the circumferential direction of the imaginary perfect circle i c are set so that their first magnetic poles 171 a and second magnetic poles 171 b are different from each other. That is, in Fig. 4, if the first magnetic pole 171 a of the first magnet 171T1 is an N pole and the second magnetic pole 171 b is an S pole, then the first magnetic poles 171 a of the second magnet 171T2 and the fourth magnet 171T4 will be S poles and the second magnetic poles 171 b will be N poles. Furthermore, the third magnet 171T3 has its first magnetic pole 171 a as an N pole and its second magnetic pole 171 b as an S pole.

[0061] The operating units 172 that hold the magnets 171 respectively reciprocate the held magnets 171 along the longitudinal direction of the target T. That is, the magnets 171 are provided movably. Furthermore, the operating units 172 that hold the magnets 171 respectively move the held magnets 171 closer to and away from the target T. Specifically, each of the operating units 172 includes a reciprocating mechanism 174 that holds the magnets 171 and moves the magnets 171 reciprocally, and an approach / separation mechanism 175 that holds the reciprocating mechanism 174 and moves the reciprocating mechanism 174 closer to and away from the target T.

[0062] <Distribution of ejection angles of metal elements from target T> The target T contains multiple metal elements. Muta When a sputtered target T is used, the emission angle of the metal elements emitted from the sputtered target T varies depending on the type of metal element.

[0063] 5 is a diagram illustrating the distribution of angles at which sputtered elements are released from the target surface TS in the film formation apparatus 100. The target T is held by a holder 131. The film formation apparatus 100 includes a magnet 171 on the opposite side of the holder 131 from the target T. Elements are sputtered and released from the target T near the magnet 171.

[0064] The angle between the emission direction of the sputtered elements and the normal direction of the target surface TS of the target T, i.e., the emission angle of the elements, is defined as angle θ (unit: radian), and the angular distribution relative to angle θ is defined as angular distribution A(θ) (unit: dimensionless).The normalization constant is defined as constant α (unit: dimensionless), and the variable defining the distribution is defined as variable β (unit: dimensionless), and the angular distribution A(θ) is defined as shown in Equation 1.

[0065]

number

[0066] When the variable β is 0, the angular distribution A(θ) is a cosine distribution. When the variable β is negative, the angular distribution A(θ) is an undercosine distribution, and when the variable β is positive, the angular distribution A(θ) is an overcosine distribution.

[0067] In Fig. 5, the line Luc represents the angular distribution A(θ) when the variable β is -0.8. In other words, the line Luc represents the angular distribution A(θ) which is an under-cosine distribution. In Fig. 5, the line Loc represents the angular distribution A(θ) when the variable β is 0.8. In other words, the line Loc represents the angular distribution A(θ) which is an over-cosine distribution.

[0068] When the angular distribution A(θ) is an undercosine distribution (line Luc), fewer elements are emitted in the direction perpendicular to the target surface TS (normal direction).When the angular distribution A(θ) is an undercosine distribution (line Luc), more elements are emitted in a direction tilted toward the target surface TS from the direction perpendicular to the target surface TS (normal direction).

[0069] On the other hand, when the angular distribution A(θ) is an over-cosine distribution (line Loc), many elements are emitted in a direction perpendicular to the target surface TS (normal direction).Furthermore, when the angular distribution A(θ) is an over-cosine distribution (line Loc), few elements are emitted in a direction tilted toward the target surface TS from the direction perpendicular to the target surface TS (normal direction).

[0070] Made of indium, gallium, zinc and oxygen membrane When forming an IGZO film on a substrate W, a target containing indium, gallium, zinc, and oxygen is used. membrane A target T made of an IGZO film is sputtered. Figure 6 shows a conceptual diagram of the angular distribution of indium, gallium, and zinc emitted from the target T when sputtered.

[0071] Figure 6(a) shows the angular distribution DIn of indium sputtered and emitted from target T. Figure 6(b) shows the angular distribution DGa of gallium sputtered and emitted from target T. Figure 6(c) shows the angular distribution DZn of zinc sputtered and emitted from target T.

[0072] The angular distribution DIn of indium and the angular distribution DZn of zinc have higher frequencies in directions tilted with respect to the normal direction of the target surface TS of the target T. That is, indium and zinc are each emitted in directions tilted with respect to the normal direction of the target surface TS of the target T. In particular, zinc is significantly tilted with respect to the normal direction of the target surface TS of the target T.

[0073] On the other hand, the angular distribution DGa of gallium has a high frequency in the normal direction of the target surface TS of the target T. That is, gallium is emitted in the normal direction of the target surface TS of the target T.

[0074] As mentioned above ,Ta The angular distribution of the atoms emitted from the target T varies depending on the type of element contained in the target. If there is a difference in the angular distribution of the atoms emitted from the target T, the film deposited on the substrate W by sputtering the target will be non-uniform in the surface direction. ,Ta The in-plane distribution of elements varies depending on the type of element contained in the target, and the in-plane distribution of elements in the film formed on the substrate W becomes non-uniform. In other words, the uniformity in the surface direction of the formed film deteriorates. When the in-plane distribution of the film formed on the substrate W becomes non-uniform, the product yield deteriorates.

[0075] The film forming apparatus 100 according to this embodiment is ,Ta Among the elements contained in the target, those that tend to have non-uniform in-plane distribution are those that are released in a direction tilted from the normal direction of the target surface TS of the target T when sputtered, for example, and are therefore likely to have non-uniform in-plane distribution. When forming an IGZO film, zinc is an element that tends to have non-uniform in-plane distribution.

[0076] <First distribution improvement method> A description will be given of a film formation method using the film formation apparatus 100 according to this embodiment. Fig. 7 is a flow chart illustrating a first distribution improvement method for the film formation apparatus 100, which is an example of the film formation apparatus according to this embodiment.

[0077] The film formation method using the film formation apparatus 100 includes a step of arranging a film formation target opposite a substrate (step S10, step (a)), and a step of sputtering the film formation target to form a film on the substrate (step S20, step (b)). In the film formation method using the film formation apparatus 100, in step S20, a larger amount of the non-uniform element is supplied to a portion where the non-uniform element is less distributed.

[0078] A first distribution improvement method for the film formation apparatus 100 according to this embodiment will be described. FIGS. 8 and 9 are diagrams illustrating the first distribution improvement method for the film formation apparatus 100, which is an example of a film formation apparatus according to this embodiment. A case in which an IGZO film is deposited in the film formation apparatus 100 according to this embodiment will be described. When depositing an IGZO film, zinc is insufficient on the periphery of the substrate W, so the power supply 133 is controlled so that more zinc is deposited on the periphery of the substrate W.

[0079] 8 is a diagram illustrating the operation of the magnet 171 of the film formation apparatus 100. The magnet 171 of the film formation apparatus 100 moves back and forth in the longitudinal direction of the target T on the opposite side of the target T from the substrate W. The magnet 171 moves back and forth by repeating the movement indicated by the arrowed line P1 in FIG.

[0080] In the first distribution improvement method, the power supplied from the power source 133 to the holder 131 is made greater on the edge side of the target T than on the center of the target T. Specifically, the power source 133 supplies greater power to the holder 131 in the high power region RH on the edge side of the target T than in the low power region RL in the center of the target T.

[0081] 9 is a diagram illustrating the power supplied by the power supply 133 included in the film forming apparatus 100. When the magnet 171 is located in the low power region RL at the center of the target, the power supply 133 supplies an output of power PW2 to the holder 131. When the magnet 171 is located in the high power region RH on the edge side of the target, the power supply 133 supplies an output of power PW1, which is greater than the power PW2, to the holder 131.

[0082] The following describes the evaluation results when the first distribution improvement method is performed by the film formation apparatus 100. Fig. 10 is a diagram illustrating the evaluation results when the first distribution improvement method is performed by the film formation apparatus 100, which is an example of the film formation apparatus according to this embodiment.

[0083] 10, the vertical axis represents the amount of each element within the surface of the laminated film deposited by sputtering on the substrate W or the non-uniformity (unit: arbitrary unit) of the thickness of the laminated film. The horizontal axis represents the ratio (unit: percent) of the power PW2 in the low power region RL at the center of the target T to the power PW1 in the high power region RH on the edge side of the target T.

[0084] The line LGa indicates the non-uniformity of the amount of gallium within the surface of the laminated film. When sputtered, gallium is emitted in the normal direction from the target surface TS of the target T. Therefore, even if the ratio of power PW2 to power PW1 is changed, the line LGa shows a nearly constant value.

[0085] The line LIn indicates the non-uniformity of the amount of indium within the plane of the laminated film. The line LZn indicates the non-uniformity of the amount of zinc within the plane of the laminated film. When sputtered, indium and zinc are emitted from the target surface TS of the target T in a direction tilted from the normal direction. Therefore, changing the ratio of power PW2 to power PW1 changes the non-uniformity. In particular, zinc, which is emitted at a large angle tilted from the normal, changes significantly when the ratio of power PW2 to power PW1 is changed.

[0086] On the other hand, as shown in Figure 10, increasing power PW1 relative to power PW2 improves the values ​​indicating the non-uniformity of gallium, indium, and zinc. In particular, when the ratio of power PW2 to power PW1 is 0.5, the values ​​indicating the non-uniformity of gallium, indium, and zinc are small enough to be acceptable for each element. Therefore, by increasing power PW1 relative to power PW2, it is possible to form films that are uniform with respect to each other for gallium, indium, and zinc.

[0087] The line LThk indicates the non-uniformity of the thickness of the laminated film within the plane of the laminated film. The non-uniformity of the thickness of the laminated film changes when the ratio of power PW2 to power PW1 is changed, similar to that of zinc. On the other hand, when power PW1 is increased relative to power PW2, the non-uniformity of the film thickness of the laminated film is improved. In particular, by setting the ratio of power PW2 to power PW1 to 0.5, the value indicating the non-uniformity can be reduced to an acceptable level. Therefore, by increasing power PW1 relative to power PW2, the formed membrane The film thickness can be made uniform.

[0088] In the above description, power is supplied to the target T, but power may be supplied to a distribution improvement target Tc2, which will be described later.

[0089] The target T is an example of a first target, the material stacked on the target T is an example of a first material, and the holder 131 that holds the target T is an example of a first holder.

[0090] <Second distribution improvement method> FIG. 11 is a flowchart illustrating a second distribution improvement method for the film formation apparatus 100, which is an example of the film formation apparatus according to this embodiment.

[0091] The film formation method using the film formation apparatus 100 includes a step of arranging a film formation target and a distribution improvement target opposite to a substrate (step S110, step (a)). The film formation method using the film formation apparatus 100 also includes a step of forming a film on a substrate by sputtering the film formation target and the distribution improvement target simultaneously or alternately (step S120, step (b)). In the film formation method using the film formation apparatus 100, in step S120, a larger amount of the non-uniform element is supplied to a portion where the non-uniform element is less distributed.

[0092] A second distribution improvement method for the film formation apparatus 100 according to this embodiment will now be described. In the second distribution improvement method, a distribution improvement target Tc1 is prepared in addition to the target T, and the distribution is improved. In the second distribution improvement method, a distribution improvement target Tc1 containing an element that causes non-uniformity and having a shape such that the element is deposited in greater amounts in areas where the element is less is used in addition to the target T. For example, in FIG. 4, film formation is performed using the target T, which is a film formation target, as the first target T1, and the distribution improvement target Tc1 as the third target T3.

[0093] The following describes the case where an IGZO film is deposited in the film deposition apparatus 100 according to this embodiment. When depositing an IGZO film, zinc is insufficient on the periphery of the substrate W, so a distribution improvement target Tc1 is used, which is formed from zinc oxide and has a shape that deposits more zinc on the periphery of the substrate W. Fig. 12 is a diagram illustrating the distribution improvement target Tc1 used in the second distribution improvement method of the film deposition apparatus 100, which is an example of the film deposition apparatus according to this embodiment. Fig. 12 is a side view of the distribution improvement target Tc1 as viewed from the short side direction.

[0094] The distribution improvement target Tc1 includes a laminated film Tc1a made of zinc oxide and a substrate Tc1b made of copper to which the laminated film Tc1a is fixed. The laminated film Tc1a is sometimes called a distribution improvement film.

[0095] The surface Tc1as of the laminated film Tc1a of the distribution improving target Tc1 is inclined outward in the longitudinal direction so that the film is deposited in greater amount on the outer periphery of the substrate W when sputtered.

[0096] The laminated film Tc1a has a base portion Tc1ad with a width W1 and a thickness t1, and an inclined portion Tc1au with a triangular cross section that is provided on top of the base portion Tc1ad and gradually thickens from the longitudinal end toward the longitudinal center. The laminated film Tc1a has a thickness t2 that is thicker than the thickness t1 at the center. The thickness of the thickest portion of the distribution improvement target Tc1, including the substrate Tc1b, is t3.

[0097] For example, the width W1 may be set in the range of 100 to 400 mm, the thickness t1 may be set in the range of 1 to 4 mm, the thickness t2 may be set in the range of 5 to 20 mm, and the thickness t3 may be set in the range of 7 to 28 mm.

[0098] The thickness of the inclined portion Tc1au gradually increases toward the center in the longitudinal direction, so that the surface Tc1as of the laminated film Tc1a is inclined outward in the longitudinal direction. By making the surface Tc1as of the laminated film Tc1a inclined outward in the longitudinal direction, the amount of zinc deposited on the outer side of the substrate W can be increased.

[0099] In the second distribution improvement method, a laminated film is formed on a substrate W using the target T, and the element distribution is improved using the distribution improvement target Tc1, thereby forming a uniform film.

[0100] The distribution improvement target Tc1 is an example of a second target, the material stacked on the target T is an example of a second material, and the holder 131 that holds the distribution improvement target Tc1 is an example of a second holder.

[0101] <Third distribution improvement method> A third distribution improvement method for the film formation apparatus 100 according to this embodiment will now be described. In the third distribution improvement method, a distribution improvement target Tc2 is prepared in addition to the target T, and the distribution is improved. In the third distribution improvement method, a shield shape is placed near the distribution improvement target Tc2, containing an element that causes non-uniformity, so that the element is deposited in greater amounts in areas where the element is less present. For example, in FIG. 4, film formation is performed using the target T, which is a film formation target, as the first target T1, and the distribution improvement target Tc2 as the third target T3.

[0102] The following describes the case where an IGZO film is deposited in the film deposition apparatus 100 according to this embodiment. When depositing an IGZO film, zinc is insufficient on the periphery of the substrate W, so a shield SLD is used near the distribution improvement target Tc2 so that more zinc is deposited on the periphery of the substrate W. FIG. 13 is a diagram illustrating the distribution improvement target Tc2 used in the second distribution improvement method of the film deposition apparatus 100, which is an example of the film deposition apparatus according to this embodiment. FIG. 13 is a side view of the distribution improvement target Tc1 as viewed from the short side direction. FIG. 14 is a diagram illustrating the installation position of the shield SLD used in the second distribution improvement method.

[0103] The distribution improvement target Tc2 includes a laminated film Tc2a made of zinc oxide and a substrate Tc2b made of copper to which the laminated film Tc1a is fixed. The laminated film Tc2a is sometimes called a distribution improvement film.

[0104] The laminated film Tc2a has a width W1 and a thickness t2. The thickness of the distribution improving target Tc2 including the substrate Tc2b is t3.

[0105] A shield SLD is placed in the central portion (near the center) of the distribution improvement target Tc2. The shield SLD is, for example, a plate-shaped member with many fine holes therethrough. The shield SLD shields some of the elements emitted from the distribution improvement target Tc2. By shielding the central portion of the distribution improvement target Tc2 with the shield SLD, it is possible to deposit a large amount of zinc on the outer periphery of the substrate W.

[0106] In the third distribution improvement method, a laminated film is formed on a substrate W using the target T, and the element distribution is improved using the distribution improvement target Tc2 and the shield SLD, thereby forming a uniform film.

[0107] <Fourth distribution improvement method> A fourth distribution improvement method for the film formation apparatus 100 according to this embodiment will be described below. Figures 15 and 16 are diagrams illustrating a first distribution improvement method for the film formation apparatus 100, which is an example of the film formation apparatus according to this embodiment.

[0108] 15 is a diagram illustrating the operation of the magnet 171 of the film formation apparatus 100. The magnet 171 of the film formation apparatus 100 moves back and forth in the longitudinal direction of the distribution improvement target Tc2 on the side opposite to the substrate W of the distribution improvement target Tc2. The magnet 171 has a magnetic field racetrack MRT. For example, in FIG. 4, film formation is performed using the target T, which is a film formation target, as the first target T1 and the distribution improvement target Tc2 as the third target T3.

[0109] In the fourth distribution improvement method, the power supplied from the power source 133 to the holder 131 is made higher on the end side of the distribution improvement target Tc2 than on the center of the target T. Specifically, the power source 133 supplies to the holder 131 a power that is higher in the high power region RH2 on the end side of the distribution improvement target Tc2 than in the low power region RL2 at the center of the distribution improvement target Tc2.

[0110] 16 is a diagram illustrating the power supplied by the power supply 133 included in the film formation apparatus 100. When the magnet 171 is located in the low power region RL2 at the center of the distribution improvement target Tc2, the power supply 133 supplies an output of power PW12 to the holder 131. When the magnet 171 is located in the high power region RH2 on the edge side of the distribution improvement target Tc2, the power supply 133 supplies an output of power PW11, which is greater than the power PW12, to the holder 131.

[0111] In the fourth distribution improvement method, the power supplied from the power source 133 to the holder 131 is made larger at the end of the distribution improvement target Tc2 than at the center of the target T, thereby increasing the number of elements deposited from the distribution improvement target Tc2 on the end of the substrate W. By increasing the number of elements deposited from the distribution improvement target Tc2 on the end of the substrate W, the uniformity of the film deposited on the substrate W can be improved.

[0112] <Fifth distribution improvement method> A fifth distribution improvement method for the film formation apparatus 100 according to this embodiment will be described. In the fifth distribution improvement method, a distribution improvement target is prepared in addition to the target T, and a shield is further disposed on the substrate W side to improve the distribution.

[0113] A case where an IGZO film is deposited in the film deposition apparatus 100 according to this embodiment will be described. When depositing an IGZO film, zinc is insufficient on the periphery of the substrate W, so a shield SLD2 is used near the mounting table 121 so that more zinc is deposited on the periphery of the substrate W. FIG. 17 is a diagram illustrating the shield SLD2 used in a fifth distribution improvement method for the film deposition apparatus 100, which is an example of the film deposition apparatus according to this embodiment. For example, in FIG. 4, film deposition is performed using the target T, which is a film formation target, as the first target T1 and the distribution improvement target as the third target T3.

[0114] By providing the shield SLD2 so as to surround the substrate W, it is possible to deposit a large amount of zinc on the outer periphery of the substrate W.

[0115] In the fifth distribution improvement method, a laminated film is formed on a substrate W using the target T, and the element distribution is improved using the distribution improvement target and the shield SLD2, thereby forming a uniform film.

[0116] <6th distribution improvement method> A sixth distribution improvement method for the film formation apparatus 100 according to this embodiment will now be described. In the sixth distribution improvement method, a distribution improvement target is prepared in addition to the target T, and a shield is further placed on the substrate W side to improve the distribution. For example, in FIG. 4, film formation is performed using the target T, which is the film formation target, as the first target T1 and the distribution improvement target as the third target T3.

[0117] A case where an IGZO film is deposited in the film deposition apparatus 100 according to this embodiment will be described. When depositing an IGZO film, zinc is insufficient on the periphery of the substrate W, so a shield SLD3 is used on the target T side in the internal space 110a of the processing vessel 110 so that more zinc is deposited on the periphery of the substrate W. Figures 18 and 19 are diagrams illustrating the shield SLD3 used in a sixth distribution improvement method for the film deposition apparatus 100, which is an example of the film deposition apparatus according to this embodiment.

[0118] The shield SLD3 is provided below the conical portion 113. The shield SLD3 includes a plate-shaped shield body SLD3a having an opening SLD3h. Elements sputtered from the target T pass through the opening SLD3h and are deposited on the substrate W. The shield SLD3 includes a shielding plate SLD3b, a shielding plate SLD3c, and a shielding plate SLD3d. The shielding plate SLD3b and the shielding plate SLD3c are provided at the edges of the opening SLD3h. The shielding plate SLD3d is provided in the center of the opening SLD3h.

[0119] By using the shield SLD3, it is possible to deposit a large amount of zinc on the outer periphery of the substrate W.

[0120] In the sixth distribution improvement method, a laminated film is formed on a substrate W using the target T, and the element distribution is improved using the distribution improvement target and the shield SLD3, thereby forming a uniform film.

[0121] <7th distribution improvement method> A seventh distribution improvement method for the film formation apparatus 100 according to this embodiment will be described. In the seventh distribution improvement method, the distribution is improved by changing the speed when the magnet 171 is oscillated over the distribution improvement target Tc2. For example, in FIG. 4, film formation is performed using the target T, which is the film formation target, as the first target T1 and the distribution improvement target as the third target T3.

[0122] A case where an IGZO film is deposited in the film deposition apparatus 100 according to this embodiment will be described. When depositing an IGZO film, zinc is insufficient on the outer periphery of the substrate W, so that more zinc is deposited on the outer periphery of the substrate W, the magnet 171 is moved slowly at the end of the distribution improvement target Tc2.

[0123] FIG. 20 is a diagram illustrating a seventh distribution improvement method for the film formation apparatus 100, which is an example of the film formation apparatus according to this embodiment.

[0124] The film forming apparatus 100 moves the magnet 171 slowly in a low speed region RS that is an end portion of the distribution improvement target Tc2, while the film forming apparatus 100 moves the magnet 171 quickly in a high speed region RF that is in the center of the distribution improvement target Tc2.

[0125] By moving the magnet 171 slowly in the low speed region RS at the end of the distribution improvement target Tc2 and quickly in the high speed region RF at the center of the distribution improvement target Tc2, more zinc can be deposited on the outer periphery of the substrate W.

[0126] In the seventh distribution improvement method, a laminated film is formed on a substrate W using a target T, and a distribution improvement target is used to improve the element distribution by moving the magnet 171 in a predetermined manner, thereby forming a uniform film.

[0127] <Actions and Effects> According to the film forming method and film forming apparatus of the present disclosure, ,TaA uniform in-plane distribution can be formed among the multiple elements contained in the target.

[0128] In the above, the material consisting of indium, gallium, zinc and oxygen membrane The film to be formed is made of indium, gallium, zinc, and oxygen. membrane The film formation apparatus of the present disclosure may be applied to a sputtering target, not limited to an IGZO film. When multiple elements are simultaneously sputtered, the angular distributions of the elements emitted from the target may differ from each other. For example, the film formation apparatus of the present disclosure may be used when forming a film of tungsten and silicon.

[0129] The film formation method and film formation apparatus according to the presently disclosed embodiments should be considered to be illustrative in all respects and not restrictive. The above-described embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent. [Explanation of symbols]

[0130] 100 Film deposition equipment 110 Processing container 130 Target holder 131 Holder 133 Power supply 171 Magnet RF high speed area RS low speed region RH high output range RL low output region SLD, SLD2, SLD3 shield T Target Target for improving Tc1 and Tc2 distribution TS target surface

Claims

1. 1. A film formation method for forming a film on a surface of a substrate using a film formation target containing a plurality of elements, the film containing the elements contained in the film formation target, the method comprising: (a) arranging the film formation target and the distribution improvement target facing the substrate; (b) sputtering the film formation target and the distribution improvement target simultaneously or alternately to form the film on the substrate; Equipped with the distribution improvement target is formed of a distribution improvement film containing a non-uniform element, among the plurality of types of elements, that will be non-uniformly distributed on the surface when a film is formed on the substrate by the film formation target, the distribution improvement target has a shape that gradually becomes thicker from the end toward the center in the longitudinal direction, In the step (b), when the non-uniform elements sputtered from the distribution improvement target are deposited on the substrate by the film formation target, the non-uniform elements are supplied from the distribution improvement target in a larger amount to a portion where the non-uniform elements are less distributed than to a portion where the non-uniform elements are more distributed. Film formation method.

2. A film formation method for forming a film on a surface of a substrate using a film formation target containing a plurality of elements, the film containing the elements contained in the film formation target, comprising: (a) arranging the film formation target and the distribution improvement target facing the substrate; (b) sputtering the film formation target and the distribution improvement target simultaneously or alternately to form the film on the substrate; Equipped with the distribution improvement target is formed of a distribution improvement film containing a non-uniform element, among the plurality of types of elements, that will be non-uniformly distributed on the surface when a film is formed on the substrate by the film formation target, a shield is provided near the center of the distribution improvement target; In the step (b), when the non-uniform elements sputtered from the distribution improvement target are deposited on the substrate by the film formation target, the non-uniform elements are supplied from the distribution improvement target in a larger amount to a portion where the non-uniform elements are less distributed than to a portion where the non-uniform elements are more distributed. Film formation method.

3. A film formation method for forming a film on a surface of a substrate using a film formation target containing a plurality of elements, the film containing the elements contained in the film formation target, comprising: (a) arranging the film formation target and the distribution improvement target facing the substrate; (b) sputtering the film formation target and the distribution improvement target simultaneously or alternately to form the film on the substrate; Equipped with the distribution improvement target is formed of a distribution improvement film containing a non-uniform element, among the plurality of types of elements, that will be non-uniformly distributed on the surface when a film is formed on the substrate by the film formation target, a shield at an edge of the substrate; In the step (b), when the non-uniform elements sputtered from the distribution improvement target are deposited on the substrate by the film formation target, the non-uniform elements are supplied from the distribution improvement target in a larger amount to a portion where the non-uniform elements are less distributed than to a portion where the non-uniform elements are more distributed. Film formation method.

4. A film formation method for forming a film on a surface of a substrate using a film formation target containing a plurality of elements, the film containing the elements contained in the film formation target, comprising: (a) arranging the film formation target and the distribution improvement target facing the substrate; (b) sputtering the film formation target and the distribution improvement target simultaneously or alternately to form the film on the substrate; Equipped with the distribution improvement target is formed of a distribution improvement film containing a non-uniform element, among the plurality of types of elements, that will be non-uniformly distributed on the surface when a film is formed on the substrate by the film formation target, In the step (b), when the non-uniform elements sputtered from the distribution improvement target are deposited on the substrate by the film formation target, the non-uniform elements are supplied from the distribution improvement target in a larger amount to a portion where the non-uniform elements are less distributed than to a portion where the non-uniform elements are more distributed, a magnet provided on the opposite side of the distribution improvement target from the substrate, In the step (b), when the magnet is at an end of the distribution improvement target in the longitudinal direction, the magnet moves more slowly than when the magnet is at the center of the distribution improvement target in the longitudinal direction. Film formation method.

5. A film formation method for forming a film on a surface of a substrate using a film formation target containing a plurality of elements, the film containing the elements contained in the film formation target, comprising: (a) arranging the film formation target and the distribution improvement target facing the substrate; (b) sputtering the film formation target and the distribution improvement target simultaneously or alternately to form the film on the substrate; Equipped with the distribution improvement target is formed of a distribution improvement film containing a non-uniform element, among the plurality of types of elements, that will be non-uniformly distributed on the surface when a film is formed on the substrate by the film formation target, In the step (b), when the non-uniform elements sputtered from the distribution improvement target are deposited on the substrate by the film formation target, the non-uniform elements are supplied from the distribution improvement target in a larger amount to a portion where the non-uniform elements are less distributed than to a portion where the non-uniform elements are more distributed, a magnet provided on the opposite side of the distribution improvement target from the substrate, In the step (b), when the magnet is located at an end of the distribution improvement target in the longitudinal direction, a larger amount of power is supplied to the holder that holds the distribution improvement target than when the magnet is located at the center of the distribution improvement target in the longitudinal direction. Film formation method.

6. The film forming target contains indium, gallium, zinc, and oxygen. The film forming method according to any one of claims 1 to 5.

7. the distribution-improving film contains zinc oxide, The film forming method according to claim 6.

Images