Electrostatic chuck device, method for manufacturing the same, and method for regenerating an electrostatic chuck device

Abstract

Provided is an electrostatic chuck device that, with post-use refurbishing processes taken into consideration, keeps down the incidence of labor and costs to the extent possible, while enabling repeated manifesting of initial characteristics including leakage current value, volume resistivity, and surface roughness.　This electrostatic chuck device is provided with a base substrate having a refrigerant flow path, and an electrostatic chuck having internal electrodes between an insulating layer and a dielectric layer, with the dielectric-layer side being a workpiece adsorption surface. The electrostatic chuck device is characterized in that the dielectric layer in the electrostatic chuck has on the surface thereof an alumina coating film in a thickness of 1-5 μm inclusive, consisting of Al2O3, and the volume resistivity of the workpiece adsorption surface at room temperature is 1 × 1015 Ω・cm or more.

Description

[Technical Field]

[0001] This invention relates to an electrostatic chuck device comprising a base substrate and an electrostatic chuck, a method for manufacturing the same, and a method for regenerating an electrostatic chuck device. More specifically, it relates to an electrostatic chuck device having a predetermined alumina coating film on the surface of the dielectric layer in the electrostatic chuck, a method for manufacturing the same, and a method for regenerating an electrostatic chuck device. [Background technology]

[0002] In semiconductor manufacturing processes using plasma etching equipment, plasma film deposition equipment (CVD, PVD), ion implantation equipment, electron beam lithography equipment, etc., as well as in liquid crystal device manufacturing processes, electrostatic chucks are widely used to adsorb and hold various workpieces.

[0003] However, when used in devices such as plasma etching equipment, the electrostatic chuck device can be damaged by the electrochemical effects of ions, electrons, and radicals contained in the plasma.

[0004] Specifically, the oxide film (anodized film) on the base substrate constituting the electrostatic chuck device may undergo reduction or fluorination (deterioration), generating reaction byproducts, or the dielectric layer of the electrostatic chuck may deteriorate, leading to an increase in leakage current. If use continues in this condition, the reaction byproducts can become particles, causing contamination of workpieces such as semiconductor wafers and glass substrates, or the increased leakage current can lead to a decrease in the adsorption force to these workpieces or damage to circuits formed on semiconductor wafers.

[0005] Therefore, electrostatic chuck devices that have been used to some extent are not only cleaned, but if the damage is extensive, the surface may be polished to re-form the oxide film (see, for example, Patent Document 1).

[0006] However, considering the effort and cost involved, there are limits to how many electrostatic chuck devices can be refurbished, and sometimes we have to give up on refurbishing a device even if the parts other than the damaged ones are functioning normally.

[0007] Incidentally, in order to ensure plasma resistance during plasma etching, it has been disclosed that a coating layer of 20 μm or less can be provided by electron beam coating supported by an ion beam (see Patent Document 2). Patent Document 2 describes an example in which yttria (Y2O3) with a thickness of 5 μm was coated while preheating to 200°C for 1 hour.

[0008] Furthermore, in order to ensure corrosion resistance to plasma, it has been disclosed that a plasma protective film is provided on the machinable ceramic in a wafer support in which a conductive member is embedded in the machinable ceramic (see Patent Document 3). Patent Document 3 describes an example in which a plasma protective film consisting of Y2O3 with a thickness of 20 μm or Al2O3 with a thickness of 10 μm is provided by a reactive sputtering method. [Prior art documents] [Patent Documents]

[0009] [Patent Document 1] Japanese Patent Publication No. 2005-191500 [Patent Document 2] Japanese Patent Publication No. 2013-512573 [Patent Document 3] Japanese Patent Publication No. 2023-23820 [Overview of the Initiative] [Problems that the invention aims to solve]

[0010] For electrostatic chucks damaged by use in plasma etching equipment, etc., it is difficult to refurbish them to satisfy physical properties such as leakage current and volume resistivity while also minimizing the effort and cost involved. As a result, only a limited number of electrostatic chucks can actually be reused.

[0011] Therefore, the inventors diligently studied how to realize an electrostatic chuck device that takes into account the regeneration process after use. As a result, they discovered that by having an alumina coating film of a predetermined thickness on the surface of the dielectric layer of the electrostatic chuck, such an electrostatic chuck device can be realized, and thus completed the present invention.

[0012] Therefore, the object of the present invention is to provide an electrostatic chuck device that can repeatedly exhibit initial performance characteristics such as leakage current value, volume resistivity, and surface roughness, while minimizing the time and cost involved when considering regeneration processing after use.

[0013] Another objective of the present invention is to provide a method for manufacturing an electrostatic chuck device that minimizes damage during manufacturing, can be used reliably over a long period of time, and can be reconditioned as many times as possible.

[0014] Furthermore, another object of the present invention is to provide a method for regenerating an electrostatic chuck device that enables reliable and repeated use. Means for achieving the objective

[0015] In other words, the present invention relates to an electrostatic chuck device comprising a base substrate having a refrigerant flow path, and an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer, with the dielectric layer side being the workpiece adsorption surface, wherein the dielectric layer of the electrostatic chuck has an alumina coating film made of Al2O3 with a thickness of 1 μm to 5 μm on its surface, and the volume resistivity of the workpiece adsorption surface at room temperature is 1 × 10⁻¹⁰ 15 This electrostatic chuck device is characterized by having a capacitance of Ω·cm or greater.

[0016] The present invention also relates to a method for manufacturing an electrostatic chuck device provided with an electrostatic chuck on a base substrate having a refrigerant flow path. After providing an insulating layer, an internal electrode, and a dielectric layer on the base substrate to form a laminated structure, an alumina coating film made of Al2O3 with a thickness of 1 μm or more and 5 μm or less is formed on the surface of the dielectric layer by ion-assisted vapor deposition at a film formation temperature of 100 °C or lower, and a work adsorption surface having a volume resistivity of 1 × 10 15 Ω·cm or more is provided on the dielectric layer side to form an electrostatic chuck on the base substrate. This is a method for manufacturing an electrostatic chuck device.

[0017] Furthermore, the present invention relates to a method for regenerating a used electrostatic chuck device provided with a base substrate having a refrigerant flow path, an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer, and having the dielectric layer side as a work adsorption surface. An alumina coating film made of Al2O3 with a thickness of 1 μm or more and 5 μm or less is formed on the surface of the dielectric layer of the used electrostatic chuck by ion-assisted vapor deposition at a film formation temperature of 100 °C or lower, and a regenerated work adsorption surface having a volume resistivity of 1 × 10 15 Ω·cm or more is provided on the dielectric layer side. This is a method for regenerating an electrostatic chuck device.

[0018] The electrostatic chuck device in the present invention includes an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer and having the dielectric layer side as a work adsorption surface, and a base substrate having a refrigerant flow path.

[0019] Among these, the dielectric layer of the electrostatic chuck has an alumina coating film made of Al2O3 with a thickness of 1 μm or more and 5 μm or less on its surface. Preferably, it is an alumina coating film made of Al2O3 with a thickness of 3 μm or more and 5 μm or less. When the film thickness of the alumina coating film is less than 1 μm, when the electrostatic chuck device is used for a certain period of time, for example, it cannot sufficiently serve as a protective film against plasma exposure in a plasma etching device or the like. On the contrary, when the film thickness of the alumina coating film exceeds 5 μm, there is a risk of deteriorating the performance of the electrostatic chuck device due to damage received during the film formation of the alumina coating film.

[0020] As described below, in the present invention, the alumina coating film provided on the surface of the dielectric layer is preferably formed by ion assisted deposition from the viewpoints of avoiding impurity mixing and forming a dense film. In this ion assisted deposition, generally, since gas particles ionized by an ion gun are irradiated during vapor deposition to press vapor deposition material molecules onto the film formation target, the film quality can be improved compared to normal vacuum vapor deposition while ejecting impurities, and a dense film can be formed. That is, in the case of ion assisted deposition, since the kinetic energy of the material molecules is higher than that in vacuum vapor deposition or the like, in the present invention, attention is paid to this point and the film thickness of the alumina coating film is suppressed to 5 μm or less.

[0021] As described in the examples, when the film thickness of the alumina coating film exceeds 5 μm, the temperature during film formation becomes 100°C or higher. Therefore, for example, in an electrostatic chuck device in which a base substrate and an electrostatic chuck are joined via a silicone-based adhesive, due to such a temperature during film formation, there is a risk that a part of the silicone-based adhesive peels off at the interface between the base substrate and the electrostatic chuck. Further, when the electrostatic chuck device has a ceramic sprayed film so as to cover the joint end face where the base substrate and the electrostatic chuck are joined, if an alumina coating film with a film thickness exceeding 5 μm is formed, cracks may occur in the ceramic sprayed film.

[0022] In the present invention, an electrostatic chuck is provided with an alumina coating film made of Al2O3 as a protective film. Since the alumina coating film made of Al2O3 has a higher volume resistivity than other films having plasma resistance such as Y2O3, as described above, while limiting the film thickness to minimize damage during film formation, an electrostatic chuck device with excellent reliability can be obtained.

[0023] Generally, when electrostatic chucks are broadly classified into three types based on their adsorption principles: i) based on Coulomb force, ii) based on Johnson-Rabec force, and iii) based on gradient force, the electrostatic chuck device according to the present invention is suitable for the iii) gradient force-based type. In other words, the present invention is particularly suitable as an electrostatic chuck device that exhibits excellent adsorption force even for insulating workpieces that are difficult to polarize. Therefore, the volume resistivity of the workpiece adsorption surface is 1 × 10⁻⁶. 15 The resistivity is Ω·cm or greater. The volume resistivity of the workpiece suction surface is determined by the workpiece suction with the operating voltage applied (voltage on) and the workpiece attachment / detachment with the operating voltage released (voltage off). Furthermore, it is limited by the leakage current value at the workpiece suction surface during suction, and the volume resistivity of the workpiece suction surface is 1 × 10⁻⁶ 16 Ideally, the volume resistivity should be around Ω·cm, and this value represents the upper limit of the effective volume resistivity. Note that the volume resistivity described in this invention represents the value at room temperature (25°C).

[0024] Furthermore, the electrostatic chuck device in the present invention has a leakage current value of 5 × 10⁻¹⁰ -3 The leakage current should preferably be less than or equal to μA, and preferably 1 × 10⁻⁶. -3 It is preferable that the leakage current value of the workpiece suction surface be 5 × 10⁻¹⁰. -3 By having a capacitance of μA or less, the decrease in the adsorption force to the workpiece can be suppressed, and even when adsorbing a semiconductor wafer with a circuit formed on it as the workpiece, damage to the circuit can be prevented.

[0025] The electrostatic chuck device in the present invention is characterized by having an electrostatic chuck, which has an internal electrode between a dielectric layer having a predetermined alumina coating film and an insulating layer, laminated on a base substrate having a refrigerant channel, with the dielectric layer side of the electrostatic chuck serving as the workpiece adsorption surface, and the workpiece adsorption surface having the volume resistivity described above. The dielectric layer, insulating layer, and internal electrode constituting the electrostatic chuck, as well as the base substrate having a refrigerant channel, can be the same as those known. In addition, the electrostatic chuck device may also be provided with a heater electrode, or a plasma-resistant thermal spray coating may be applied to the sidewall flange surface formed on the sidewall.

[0026] Here, the electrostatic chuck may be joined to the base substrate using various adhesives or adhesive sheets, or an insulating layer, internal electrodes, and dielectric layer may be sequentially formed on the surface of the base substrate by spraying a ceramic thermal spray film or a metal thermal spray film. Alternatively, the insulating layer and dielectric layer of the electrostatic chuck may be formed from a ceramic sintered body, and these may be laminated and fired in a green sheet state, or integrated by hot press firing. In this case, the internal electrodes may be formed by processing high-melting-point metals such as W or Mo, or by printing metal paste, metal foil, mesh, etc., and the resulting laminated members may be joined to the base substrate using adhesives or adhesive sheets.

[0027] Furthermore, the base substrate may be equipped with a cooling channel for supplying a cooling gas such as helium (He) to the workpiece held on the workpiece suction surface via an electrostatic chuck, or for circulating cooling water to cool the electrostatic chuck, for purposes such as controlling the temperature of the workpiece. The material used to form this base substrate is not particularly limited, but generally, a metal work substrate made of aluminum or an aluminum alloy is used.

[0028] When forming an alumina coating film on the surface of the dielectric layer of an electrostatic chuck, as described above, it is preferable to form an alumina coating film made of Al2O3 with a thickness of 1 μm to 5 μm by ion-assisted evaporation at a deposition temperature of 100°C or lower. In this case, the alumina coating film may be formed before laminating the electrostatic chuck onto the base substrate, but preferably, after forming a laminated structure by providing an insulating layer, internal electrodes, and a dielectric layer on the base substrate, an alumina coating film made of Al2O3 with a thickness of 1 μm to 5 μm is formed on the surface of the dielectric layer by ion-assisted evaporation at a deposition temperature of 100°C or lower.

[0029] In other words, in the method for manufacturing an electrostatic chuck device according to the present invention, damage during film formation can be minimized by forming an alumina coating film made of Al2O3 with a thickness of 1 μm to 5 μm by ion-assisted deposition. For example, an insulating layer, an internal electrode, and a dielectric layer can be formed on a base substrate via a silicone adhesive to create a laminated structure, and then a predetermined alumina coating film can be formed on the surface of the dielectric layer as described above. Alternatively, an insulating layer, an internal electrode, and a dielectric layer can be formed on a base substrate to create a laminated structure, and then a ceramic thermal spray film can be applied to the side surface of the laminated structure before forming a predetermined alumina coating film on the surface of the dielectric layer.

[0030] Furthermore, according to the present invention, it is also possible to regenerate used electrostatic chuck devices that are already in use in semiconductor manufacturing processes and liquid crystal device manufacturing processes, including plasma etching equipment and ion implantation equipment.

[0031] In other words, even in electrostatic chuck devices where the dielectric layer of the electrostatic chuck has deteriorated and leakage current has increased due to electrochemical reactions from ions, electrons, radicals, etc., contained in the plasma, ion-assisted deposition as described above can minimize damage during film formation. Therefore, preferably, the electrostatic chuck device can be regenerated by polishing the surface of the dielectric layer of the electrostatic chuck and then forming an alumina coating film made of Al2O3 with a thickness of 1 μm to 5 μm at a film formation temperature of 100°C or lower using ion-assisted deposition. [Effects of the Invention]

[0032] According to the present invention, it is possible to realize an electrostatic chuck device that can restore the initial performance while minimizing the effort and cost incurred when considering regeneration processing after use.

[0033] Furthermore, the method of the present invention makes it possible to obtain an electrostatic chuck device that can be used reliably for a long period of time while minimizing damage during manufacturing. Moreover, the method of the present invention is applicable not only to the manufacture of new electrostatic chuck devices but also to the regeneration of used electrostatic chuck devices, making it possible to repeatedly regenerate highly reliable electrostatic chuck devices semi-permanently. [Brief explanation of the drawing]

[0034] [Figure 1] Figure 1 shows the process flow for obtaining the electrostatic chuck device according to the present invention. [Figure 2] Figure 2 is a cross-sectional photograph of the electrostatic chuck device obtained in Test Example 1. [Figure 3] Figure 3 is a cross-sectional photograph of the electrostatic chuck device obtained in Test Example 2. [Modes for carrying out the invention]

[0035] The electrostatic chuck device according to the present invention will be described in detail below, with reference to preferred configuration examples. However, the present invention is not limited to the following.

[0036] Figure 1 shows an overview of the process flow for obtaining the electrostatic chuck device according to the present invention. First, <1> To prepare the electrostatic chuck, ceramic green sheets with an alumina purity of 99.5% or higher are prepared to form a dielectric layer approximately 250-350 μm thick and an insulating layer approximately 600-2600 μm thick. The internal electrodes should have a thickness of approximately 20-50 μm. The internal electrodes can be formed by processing high-melting-point metals such as W or Mo, arranging bulk materials such as metal foil or mesh of the same type, or printing a metal paste containing transition metals such as Ag or Pt on either the dielectric or insulating layer side.

[0037] Next, the materials forming these green sheets and internal electrodes are stacked and fired in the order of dielectric layer, internal electrode, and insulating layer, or they are integrated by hot-press firing to obtain a laminated member. As a result, the dielectric layer and insulating layer become Al2O3 sintered bodies.

[0038] Also, <2> As the base material, a material is prepared that is equipped with a refrigerant channel for supplying a cooling gas such as helium to the workpiece or for circulating cooling water to cool the electrostatic chuck. Preferably, this base material is formed from high-purity aluminum, and the laminated surface on which the electrostatic chuck is laminated and the parts not protected by the side wall thermal spray coating described later are made of anodized aluminum. The screw holes for fixing the electrostatic chuck and the attachment of power supply pins for supplying power to the internal electrodes of the electrostatic chuck can be done in the same way as known electrostatic chuck devices.

[0039] Next, these are joined by adhering the laminated member and the base substrate prepared above using a silicone-based adhesive. The silicone-based adhesive used here is not particularly limited as long as it is a semiconductor grade mainly composed of a resin (silicone) with SiO2 as a raw material. Examples of commercially available products include silicone adhesives manufactured by Dow Corning Toray Co., Ltd. or Toray Industries, Inc. In that case, for example, for the power supply pins connected to the internal electrodes of the electrostatic chuck, the silicone-based adhesive can be adhered together with an insulating cover (insulating sleeve) to the contact portion, and the same treatment as in the case of a known electrostatic chuck device can be performed. Also, <3> when a laminated structure is obtained by joining the laminated member and the base member, a ceramic sprayed film (i.e., sidewall sprayed film) made of yttrium oxide or aluminum oxide is formed on the side surface of the laminated structure so as to cover the end face of the joint portion for the purpose of preventing erosion by plasma.

[0040] After joining the laminated member body and the base substrate that constitute the electrostatic chuck as described above to obtain a laminated structure, the upper surface corresponding to the dielectric layer side of the laminated member in the laminated structure is <4> machined and polished. Also, the side surface of the laminated member composed of the dielectric layer, internal electrodes, and insulating layer is <4> machined. In that case, the upper surface of the laminated member needs to be polished so as to have a surface roughness corresponding to the use process of the electrostatic chuck device. On the other hand, the polishing of the side surface of the laminated member is performed for the purpose of adjusting the outer diameter dimension of the electrostatic chuck, and it may be polished according to the size of the workpiece to be adsorbed.

[0041] Here, for the laminated structure <4> machined and polished as described above, a <5> primary performance inspection is carried out to measure the volume resistivity and leakage current value of the dielectric layer corresponding to the upper surface of the laminated member. That is, it is confirmed that the volume resistivity at room temperature is 1×10 15 Ω·cm or more, and at the same time, it is confirmed that the leakage current value is 5×10 -3 μA or less. The leakage current value represents the leakage current value between the surface of the dielectric layer corresponding to the upper surface of the laminated member and the internal electrodes.

[0042] <5> After the initial performance test, the surface of the dielectric layer in the laminated member <6> Cleaning will be performed. This cleaning will consist of two methods: a chemical treatment using organic solvents and a physical treatment using ultrasonic waves applied to pure water. During this process, the laminated structure will be masked to protect it from the effects of these cleaning methods, except for the surface of the dielectric layer. After the chemical and physical cleaning, the structure will be further cleaned using an organic solvent such as IPA (isopropyl alcohol) and then with pure water. <7> The laminated structure is cleaned.

[0043] the above <7> After cleaning, measure the volume resistivity and leakage current of the dielectric layer on the upper surface of the laminated material again. <8> A secondary performance test was conducted, and the volume resistivity at room temperature was found to be 1 × 10⁻⁶. 15 The value is greater than Ω·cm, and the leakage current is 5 × 10⁻⁶. -3 Confirm that it is less than or equal to μA.

[0044] Next, an alumina coating film is formed on the surface of the dielectric layer of the laminated member in the laminated structure by ion-assisted vapor deposition. <9> Ion-assisted vapor deposition will be performed. The preferred conditions for ion-assisted vapor deposition are as follows: Specifically, the film deposition material in ion-assisted evaporation is Al2O3, and a mixed gas of argon / oxygen is used as the deposition process gas, with the oxygen introduction rate adjusted within the range of 30-60 sccm and the argon introduction rate within the range of 10-100 sccm. The acceleration voltage is 100-200V, and the vacuum level is 1 × 10⁻⁶. -4 ~1 × 10 -1 The temperature is Pa. By depositing an alumina coating film with a thickness of 1 μm to 5 μm under these deposition conditions, it is possible to obtain an alumina coating film with the required quality while minimizing damage at a deposition temperature of 100°C or lower. Furthermore, all surfaces of the dielectric layer to which the alumina coating film is deposited are masked and protected.

[0045] After that, again <10> After washing with pure water, the volume resistivity and leakage current of the alumina coating film obtained above are measured. <11> A third performance test will be conducted. <11> In the third performance test, the dimensions and flatness of the electrostatic chuck are measured to detect any abnormalities in the alumina coating, and the volume resistivity of the alumina-coated electrostatic chuck at room temperature is 1 × 10⁻⁶. 15 Confirm that the value is Ω·cm or greater, and that the leakage current value is 5 × 10 -3 By confirming that the current is less than or equal to μA, the electrostatic chuck device according to the present invention is completed.

[0046] The above pertains to the manufacturing of new electrostatic chuck devices, but when refurbishing used electrostatic chuck devices, the process flow shown in Figure 1 applies. <5> It will be implemented from there. <5> Primary examination and <8> In the secondary inspection, the volume resistivity and leakage current value of the used electrostatic chuck itself (in its current state) are measured and confirmed, and other than that, the process is the same as when manufacturing a new electrostatic chuck device. <9> Ion-assisted deposition and other processes will be implemented. This will enable the regeneration of used electrostatic chuck devices.

[0047] [Test Examples 1 and 2] Following the process flow shown in Figure 1, the electrostatic chuck device according to Test Example 1 (Example) was manufactured. <9> In ion-assisted deposition, a 4 μm thick alumina coating film was deposited on the surface of the dielectric layer under the following conditions. The deposition temperature was 100°C or lower. This deposition temperature was measured using the ambient temperature of the electrostatic chuck used for deposition. Film deposition process gas: Argon / oxygen mixed gas Oxygen infusion rate: 20-40 sccm, Argon infusion rate: 5-10 sccm Acceleration voltage: 400~500V Vacuum degree: 1×10 -2 Pa or less

[0048] Figure 2 shows a cross-sectional photograph (optical microscope image at 100x magnification) of the obtained electrostatic chuck device. According to this, no cracks or other defects were observed, including in the insulating layer, dielectric layer, and sidewall spray coating on the base substrate.

[0049] On the other hand, the electrostatic chuck device for Test Example 2 (Comparative Example) is the same as in Test Example 1 above. <9> An alumina coating film with a thickness of 10 μm was deposited under each of the ion-assisted deposition conditions, and otherwise manufactured in the same manner as in Test Example 1. <9> The film deposition temperature in ion-assisted evaporation reached 150°C.

[0050] Figure 3 shows a cross-sectional photograph of the electrostatic chuck device in Test Example 2 (Comparative Example). This shows that cracks occurred in the sidewall thermal spray film at the locations in contact with the base substrate and at the locations in contact with the dielectric / insulating layer. In other words, although the film deposition conditions for ion-assisted evaporation were the same except for the film thickness, it was found that if the alumina coating film deposited on the surface of the dielectric layer became too thick, the damage would be significant and adversely affect the electrostatic chuck device.

Claims

1. An electrostatic chuck device comprising a base substrate having a refrigerant flow path, and an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer, with the dielectric layer side being the workpiece adsorption surface, The dielectric layer of the electrostatic chuck has an Al layer on its surface with a thickness of 1 μm to 5 μm. ２ O ３ It has an alumina coating film consisting of the above, and the volume resistivity of the workpiece adsorption surface at room temperature is 1 × 10 １５ An electrostatic chuck device characterized by having a value of Ω·cm or more.

2. The leakage current value of the workpiece adsorption surface is 5 × 10 －３ The electrostatic chuck device according to claim 1, wherein the current is μA or less.

3. The electrostatic chuck device according to claim 1, wherein the base substrate and the electrostatic chuck are joined via a silicone adhesive.

4. The electrostatic chuck device according to claim 3, having a ceramic thermal spray coating that covers the end face of the joint where the base substrate and the electrostatic chuck are joined.

5. The electrostatic chuck device according to claim 1, wherein the alumina coating film is formed by ion-assisted deposition.

6. A method for manufacturing an electrostatic chuck device, comprising an electrostatic chuck on a base substrate having a refrigerant flow path, After forming a laminated structure by providing an insulating layer, internal electrodes, and a dielectric layer on the base substrate, an Al film with a thickness of 1 μm to 5 μm is deposited on the surface of the dielectric layer by ion-assisted vapor deposition at a deposition temperature of 100°C or lower. ２ O ３ An alumina coating film consisting of the above is formed, and the volume resistivity is 1 × 10 １５ A method for manufacturing an electrostatic chuck device, characterized by forming an electrostatic chuck on a base substrate by providing a workpiece adsorption surface of Ω·cm or more on the dielectric layer side.

7. A method for manufacturing an electrostatic chuck device according to claim 6, wherein an insulating layer, an internal electrode, and a dielectric layer are provided on the base substrate via a silicone adhesive to form a laminated structure, and then an alumina coating film is formed on the surface of the dielectric layer.

8. A method for manufacturing an electrostatic chuck device according to claim 7, comprising providing an insulating layer, an internal electrode, and a dielectric layer on the base substrate to form a laminated structure, then providing a ceramic thermal spray film on the side surface of the laminated structure, and finally forming an alumina coating film on the surface of the dielectric layer.

9. A method for regenerating a used electrostatic chuck device comprising a base substrate having a refrigerant flow path and an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer, with the dielectric layer side being the workpiece adsorption surface, On the surface of the dielectric layer of the used electrostatic chuck, an alumina coating film with a thickness of 1 μm or more and 5 μm or less is formed by ion-assisted evaporation at a film formation temperature of 100 °C or lower with Al ２ O ３ to form a regeneration work adsorption surface having a volume resistivity of 1 × 10 １５ Ω·cm or more on the dielectric layer side, and a regeneration method of an electrostatic chuck device characterized by this.

Images