Light-emitting device, display device, electronic device, and method for manufacturing a light-emitting device

Abstract

To prevent corrosion against a pad electrode of a light-emitting device to improve reliability.SOLUTION: A light-emitting device comprises: a pixel region having a plurality of light-emitting elements; an electrode terminal for being electrically connected to an external terminal; a peripheral region containing a first insulation layer distributed onto the electrode terminal and a second insulation layer distributed onto the first insulation layer. The external terminal comprises a first metal layer exposed to a first open provided to the first insulation layer. An upper surface of the first insulation layer is inclined to a bottom part of the first metal layer on an end part on the side of the first open. The second insulation layer includes a second open in the first open. In the first open, the second insulation layer is contacted to the electrode terminal.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a light-emitting device , display devices, electronic equipment, and a method for manufacturing the light-emitting device.

Background Art

[0002] Since organic EL elements are self-emitting elements, have a high response speed, do not require a backlight, and have low power consumption, they are becoming the main component of color display devices instead of liquid crystals. Higher performance (higher definition, higher brightness, higher color purity) and higher reliability are required for organic EL elements.

[0003] On the other hand, it is known that the organic compounds of the light-emitting materials used in organic EL elements have low moisture resistance, and dark spots and leakage currents are caused by moisture infiltrating from the outside. Therefore, technologies for reducing the infiltration of moisture into the organic EL element have been developed. As a structure for improving the sealing performance in the pad portion for external data output, Patent Document 1 describes a structure in which film formation and etching of insulating films with different moisture permeation rates are performed twice.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the organic EL (OLED) display device shown in Patent Document 1, film formation and etching of an insulating film are performed twice in order to suppress the infiltration of moisture in the connection portion (bonding pad, ACF pad) with an external circuit. As a result, the yield of ACF connection may decrease due to the shape of the formed pad, and the reliability of the pad may decrease.

[0006] Therefore, the purpose of this disclosure is to provide a light-emitting device capable of improving the reliability of a pad. [Means for solving the problem]

[0007] The first aspect of this disclosure is, A pixel region having multiple light-emitting elements, A peripheral region including an electrode terminal for electrically connecting to an external terminal, a first insulating layer disposed on the electrode terminal, and a second insulating layer disposed on the first insulating layer, It has, The electrode terminal comprises a first metal layer exposed by a first opening provided in the first insulating layer, and a second metal layer disposed on top of the first metal layer. The upper surface of the first insulating layer is inclined with respect to the lower surface of the first metal layer at the end on the side of the first opening. The second insulating layer has a second opening within the first opening, before Within the first opening, the second metal layer is disposed between the first metal layer and the second insulating layer. Within the first opening, the second insulating layer is in contact with the second metal layer. The first metal layer is exposed by the second opening. The first metal layer contains aluminum. This is a light-emitting device characterized by the following features.

[0008] A second aspect of this disclosure is, 1st metal layer form The process to be completed, A step of forming a second metal layer on the first metal layer, The aforementioned 2nd metal layer A step of forming a first insulating layer on top of, A step of isotropically etching the first insulating layer to form a first opening in the first insulating layer, The first insulating layer and the 2 A step of forming a second insulating layer on a metal layer, Anisotropically etching the second insulating layer to form a second opening in the second insulating layer and exposing the first metal layer in the second opening; having; In the step of forming the first opening in the first insulating layer, the first insulating layer is isotropically etched using the second metal layer as an etching stop layer. A method for manufacturing a light-emitting device, characterized by the above.

Effects of the Invention

[0009] According to the present disclosure, the reliability of the pads of the light-emitting device can be improved.

Brief Description of the Drawings

[0010] [Figure 1] Overall plan view of the light-emitting device according to Example 1. [Figure 2] Cross-sectional view taken along cut line A in FIG. 1. [Figure 3] Cross-sectional view of the pad portion in Example 1. [Figure 4] Cross-sectional view before the pad opening in FIG. 2. [Figure 5A] Diagram for explaining the manufacturing process of the pad opening in Example 1. [Figure 5B] Diagram for explaining the manufacturing process of the pad opening in Example 1. [Figure 5C] Diagram for explaining the manufacturing process of the pad opening in Example1. <s [Figure 5D] Diagram for explaining the manufacturing process of the pad opening in Example 1. [Figure 5E] Diagram for explaining the manufacturing process of the pad opening in Example 1. [Figure 5F] Diagram for explaining the manufacturing process of the pad opening in Example 1. [Figure 6] Cross-sectional view of the pad opening of the light-emitting device according to Example 2 [Figure 7A] Diagram for explaining the manufacturing process of the pad opening in Example 2. [Figure 7B] Diagram for explaining the manufacturing process of the pad opening in Example 2. [Figure 7C] A diagram illustrating the manufacturing process of the pad opening in Example 2. [Figure 7D] A diagram illustrating the manufacturing process of the pad opening in Example 2. [Figure 7E] A diagram illustrating the manufacturing process of the pad opening in Example 2. [Figure 7F] A diagram illustrating the manufacturing process of the pad opening in Example 2. [Figure 8] A diagram illustrating the pixel structure of the display device according to Example 3. [Figure 9] A schematic diagram showing an example of a display device according to one embodiment. [Figure 10] A schematic diagram showing an example of an imaging device and electronic equipment according to one embodiment. [Figure 11] A schematic diagram showing an example of a display device according to one embodiment. [Figure 12] A schematic diagram showing an example of a lighting device according to one embodiment. [Figure 13] A schematic diagram showing an example of a wearable device according to an embodiment. [Figure 14] A schematic diagram of an image forming apparatus according to one embodiment. [Modes for carrying out the invention]

[0011] Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In the following description and drawings, common components are denoted by the same reference numerals across multiple drawings. Therefore, common components will be described by referring to multiple drawings together, and descriptions of components denoted by the same reference numerals will be omitted as appropriate.

[0012] (Example 1) Figure 1 is a plan view of an organic EL display device 100 to which the present invention is applied, and Figure 2 is a cross-sectional view of the display device 100 at cut line A. The display device 100 is a pixel array in which pixels, each containing a plurality of light-emitting elements, are arranged. (Pixel area)The pixel array 110 has a pad placement area 120 on which pads (electrode terminals) for electrically connecting the pixels of the display device 100 to external terminals are arranged. The pad placement area 120 is also called the peripheral area. The pixel array 110 and the pad placement area 120 are arranged on a silicon substrate 200.

[0013] The pixel array 110 has multiple organic light-emitting layers 212 and multiple transistors 201 and wiring layers 203, 205, and 207 to drive them. Each wiring layer is connected by plugs 204, 206, and 208. The pixel array 110 also has wiring layer 203 made of silicon It has a plug 202 for connecting to the circuit board 200. An insulating layer 209 is placed between the wiring layers 203, 205, 207 and the plugs 202, 204, 206, 208.

[0014] The silicon substrate 200 is a single-crystal silicon layer having a thickness of, for example, 750 to 800 μm, preferably 770 to 780 μm.

[0015] The pixel array 110 has an upper electrode 213 and a lower electrode 210 above and below the organic light-emitting layer 212 for applying voltage to the organic light-emitting layer 212, and the lower electrode 210 is connected to the wiring layer 207 by a plug 208. An sealing layer 214 is placed above the organic light-emitting layer 212 to ensure its lifespan. The sealing layer 214 can be arbitrarily selected from materials commonly used in semiconductor devices. For example, a silicon nitride film, which is light-transmitting and dense, can be used as the material for the sealing layer 214. Also, the sealing layer 214 is oxide film layer It has a three-layer structure with an insulating layer sandwiched between two layers. Specifically, the sealing layer 214 is composed of three layers: a first sealing layer 215, a second sealing layer 216, and a third sealing layer 217. The first sealing layer 215 and the third sealing layer 217 are silicon nitride films (S) deposited by, for example, plasma CVD (Chemical Vapor Deposition). iN) and the second sealing layer 216 can be an alumina film (Al2O3) formed by the ALD method.

[0016] The transistor 201 can be formed using known semiconductor process technology. The contact plug 202 can be made of a high-melting-point metal such as tungsten. The wiring layers 203, 205, and 207 are assumed to be made of aluminum wiring and tungsten plugs, but copper materials may also be used. The insulating layer 209 can be made of a silicon-based insulating film such as a silicon oxide film, silicon nitride film, or silicon carbide film. It may also contain low-k materials with a low dielectric constant.

[0017] To electrically connect the display device 100 to the outside, a pad opening 218 is provided in the pad placement area 120, and a pad electrode 121 is provided at the bottom of the pad opening 218. The pad electrode 121 is made of a metal material such as aluminum. The pad electrode 121 is formed by exposing a metal layer through the pad opening 218. In this embodiment, the pad electrode 121 is formed simultaneously with the wiring layer 207. That is, the pad electrode 121 and the wiring layer 207 have approximately the same film structure and film thickness. However, when the pad opening 218 is formed, the film thickness of the pad electrode 121 in the pad opening 218 portion may be thinner than that outside the opening.

[0018] Figure 3 shows an enlarged cross-sectional view of the pad portion. Pad electrode 121 (1st metal layer) A second metal layer 302 is placed on top of it. The second metal layer 302 is Also known as barrier metal, For example, titanium or titanium nitride can be used.

[0019] On the second metal layer 302 The first insulating layer An insulating layer 209 is provided. A sealing layer 214, which is a second insulating layer, is placed on the first insulating layer. In addition, in this disclosure, the first insulation On the layer, the second insulation The arrangement of layers means that the first insulation The second layer is in contact with the layer insulation When layers are arranged, and the first insulation Layer and 2 insulation One or more third layers between layers insulation The first layer is included insulation Layer and second insulation This includes cases where layers are arranged.

[0020] The insulating layer 209 can be a silicon oxide film deposited by, for example, plasma CVD. The upper surface of the insulating layer 209 has a sloped shape with respect to the pad electrode 121 at the end on the pad opening 218 side. The slope of the insulating layer 209 is such that the thickness of the insulating layer 209 decreases as it approaches the pad opening 218. Also, the insulating layer 209 is positioned spaced away from the pad opening 218 and is not adjacent to the pad opening 218. Here, the slope angle Θ of the surface of the insulating layer 209 with respect to the pad electrode 121 is denoted as Θ. By forming an opening in the insulating layer 209 by isotropic etching, a sloped shape can be formed at the end of the insulating layer 209. The slope angle Θ can be controlled to some extent by the processing conditions of the isotropic etching. It can be controlled. Also, depending on the processing conditions of isotropic etching, the slope may be curved rather than flat.

[0021] A sealing layer 214 is placed on top of the insulating layer 209. The sealing layer 214 extends from the pixel array 110 and, like the portion of the pixel array 110, is composed of three layers: a first sealing layer 215, a second sealing layer 216, and a third sealing layer 217. The sealing layer 214 has a shape that is inclined with respect to the pad electrode 121 near the pad opening 218. This shape is due to being deposited on the inclination of the insulating layer 209. Here, the inclination angle of the surface of the sealing layer 214 with respect to the pad electrode 121 is denoted as Θ'. Also, in the region adjacent to the pad opening 218, the upper surface of the sealing layer 214 is not inclined and is parallel to the pad electrode 121. (Inside the first opening, as described later) In this case, the insulating layer 209 is not placed between the sealing layer 214 and the second metal layer 302, and the sealing layer 214 is placed on top of the second metal layer 302. In contact, They will be assigned.

[0022] The side (inclined surface) of the pad opening 218 of the insulating layer 209 is covered with the sealing layer 214, so the insulating layer 209 is not exposed. By reducing the intrusion of moisture through the insulating layer 209, deterioration of the light-emitting layer 212 can be prevented, and malfunctions such as poor light emission can be reduced.

[0023] It is preferable to set the inclination angle Θ of the insulating layer 209 to 20 degrees or more and 50 degrees or less. This is because if the inclination of the insulating layer 209 is as described above, the possibility of voids occurring during the deposition of the sealing layer 214 is low. If voids occur, the affected area becomes a pathway for moisture to penetrate, causing deterioration of the light-emitting layer and resulting in malfunctions such as poor light emission. Therefore, in this disclosure, by making the inclination of the insulating layer 209 gentler, the concern of voids occurring in the sealing layer 214 is reduced. However, if the inclination of the insulating layer 209 is made too small, there is a drawback in that the dimensions of the pad opening 218 become larger. Therefore, by setting the inclination angle Θ of the insulating layer 209 to 20 degrees or more and 50 degrees or less, it is possible to suppress voids and miniaturize the pad opening 218 at the same time.

[0024] Because the insulating layer 209 has a slope, a similar slope occurs when forming the sealing layer 214 above it. With this shape, when an anisotropic conductive film (ACF) is used during mounting, conductive particles form pad openings during adhesion. 218 This makes it easier for the material to penetrate, resulting in improved yield. However, if the inclination is too small, the dimensions of the pad opening 218 will increase, which is a drawback. By setting the inclination angle Θ' of the sealing layer 214 to 20 degrees or more and 50 degrees or less, it is possible to achieve both improved yield and miniaturization of the pad opening 218. The inclination angle Θ' is the same angle as the inclination angle Θ. It's fine to use a different angle.

[0025] The sidewall of the pad opening 218 is composed of the exposed sealing layer 214 and the second metal layer 302, and the pad electrode 121 is positioned at the bottom of the pad opening 218. Since the insulating layer 209 is positioned recessed from the pad opening 218, the insulating layer 209 is not exposed on the sidewall of the pad opening 218. The pad opening 218 is formed using anisotropic etching of the sealing layer 214. At this time, the second metal layer 302 functions as an etching stop layer. Even if there is variation in the thickness of the sealing layer 214, the amount of abrasion of the pad electrode 121 can be minimized. Because the pad electrode 121 is abraded by etching, the pad electrode 121 has a recess in the portion of the pad opening 218 and is thinner than the portion outside the pad opening 218. The depth T1 of the recess is, for example, 1 nm or more and 100 nm or less.

[0026] With this structure, it is possible to suppress excessive etching of the pad electrode 121, thereby minimizing corrosion of the pad due to moisture immersion in the subsequent mounting process and suppressing a decrease in pad reliability.

[0027] The manufacturing method of the display device 100 of this disclosure will be described below with reference to Figures 4, 5A to 5F. Each drawing shows the process up to forming the pad opening 218 for connecting to the outside on the pad electrode 121. This shows cross-sectional views of each step in the process.

[0028] Figure 4 shows the cross-sectional structure before the pad opening. Of the structures shown in Figure 1, the pixel array 110 has the lower electrode 210 and insulating layer 211 formed, and the pad placement area 120 has the insulating layer 209 formed. The manufacturing process up to the steps shown in Figure 4 can be carried out using conventional methods.

[0029] Figures 5A to 5F illustrate the process flow of the pad opening, and are enlarged versions of the pad placement area 120 shown in Figure 1 or Figure 4. Figures 4 and 5A show the state after the same process.

[0030] First, as shown in Figure 5A, a second pad electrode 121 is placed on top of the pad electrode 121. metal layer 302 is arranged, and an insulating layer 209 is formed on top of it. These are formed simultaneously with the pixel array 110. The pad electrode 121 is made of, for example, aluminum (Al) with 5% by weight of copper (Cu) metal part Consists of, the second metal layer 302 is, for example, titanium nitride (TiN). metal part It consists of the following. Also, below the pad electrode 121 , Rear Metal 301 may be used. . The rear metal 301 can be made of, for example, titanium (Ti) or titanium nitride (TiN), and the insulating layer 209 can be made of, for example, a silicon oxide film (SiO) deposited by plasma CVD.

[0031] The pad opening boundary 218a indicates the position of the pad opening 218 which will be provided in a later step.

[0032] Next, as shown in Figure 5B, the insulating layer 209 is etched using photolithography to create openings. (This is called the first opening.) A photoresist 501 is formed as a protective film for forming the pad. The photoresist 501 has an opening at a position set back from the pad opening boundary 218a.

[0033] Subsequently, as shown in Figure 5C, openings are made in the insulating layer 209 by isotropic etching. (First opening) This forms the insulating layer 209 by processing with isotropic etching. , at the end of the first opening, The shape is inclined relative to the pad electrode 121. In other words, the upper surface of the insulating layer 209 is inclined with respect to the lower surface of the first metal layer at the end on the side of the first opening. For isotropic etching, for example, wet etching with buffered hydrofluoric acid can be used to achieve the second metal layer 302 can be easily left in place, and exposure of the pad electrode 121 can be prevented. metal layer If 302 can be left intact, isotropic dry etching may be used. Since the photoresist 501 has an opening at a position set back from the pad opening boundary 218a, the opening of the insulating layer 209 (First opening) It is formed set back from the pad opening boundary 218a. Opening in the insulating layer 209 (First opening) After forming, the photoresist 501 is removed.

[0034] Next, as shown in Figure 5D, the insulating layer 209 and the opening of the insulating layer 209 (First opening) A sealing layer 214 is deposited on the upper layer. The sealing layer 214 is also deposited on the pixel array 110 at the same time. The sealing layer 214 is, for example, a silicon nitride film deposited by plasma CVD, and consists of three layers including an alumina film (Al2O3) deposited by ALD (Atomic Layer Deposition) in between. The sealing layer 214 can function as a barrier against external moisture by employing a film with lower moisture permeability than the insulating layer 209. Furthermore, the inclination at the edges of the insulating layer 209 reduces concerns about the formation of voids during the deposition of the sealing layer 214. Moreover, by depositing the sealing layer 214 with a similar inclination to the inclination of the openings in the insulating layer 209, conductive particles can form a pad opening, for example, when bonding an anisotropic conductive film (ACF). 218 This can also lead to an improvement in yield by making it easier for the material to penetrate the substrate.

[0035] Next, as shown in Figure 5E, a photoresist 502 is formed on top of the sealing layer 214 using photolithography. The photoresist 502 etches the sealing layer 214 and creates openings. (This is called the second opening.) It functions as a protective film for forming the pad. The opening of the photoresist 502 is configured to substantially coincide with the pad opening boundary 218a.

[0036] Next, as shown in Figure 5F, an opening is made in the sealing layer 214 by anisotropic etching. (Second opening) Forms the second metal layer 302 is removed to expose the pad electrode 121. For anisotropic etching, plasma etching (RIE) using a C4F8 or CF4-based gas can be used, for example. At this time, since the insulating layer 209 is formed recessed from the pad opening 218, the side walls of the pad opening 218 are covered with the sealing layer 214. With such a structure, it is possible to reduce the intrusion of moisture from the pad opening 218 through the insulating layer 209, thereby reducing deterioration of the light-emitting layer 212 and reducing problems such as poor light emission. After that, the photoresist 502 is removed to complete the pad opening 218.

[0037] As is clear when compared to the conventional technology, in the conventional technology the pad electrode 121 is subjected to etching twice at the opening, by the insulating layer 209 and the sealing layer 214, whereas in this embodiment it is subjected to etching only once, by the sealing layer 214. Therefore, the amount of abrasion of the pad electrode 121 (Depth of recess T1)This makes it possible to reduce the amount of corrosion. As a result, for example, high reliability can be obtained against corrosion of the pad electrode 121 caused by prolonged immersion in water during the dicing process of the mounting process.

[0038] (Example 2) Figure 6 is a cross-sectional view of the second embodiment. The difference from the first embodiment is that the insulating layer 209 has a two-stage incline, and the sealing layer 214 formed on top of it has a similar incline. The insulating layer 209 has a first inclined portion whose upper surface is inclined with respect to the pad electrode 121, a parallel portion whose upper surface is parallel to the pad electrode 121, and a second inclined portion whose upper surface is inclined with respect to the pad electrode 121. By having a two-stage incline in the insulating layer 209, it is possible to further reduce concerns about the formation of voids in the sealing layer 214 at the stepped portion. In addition, by having a two-stage incline in the sealing layer 214, when an anisotropic conductive film (ACF) is used during mounting, charged particles can enter more easily through the pad opening during adhesion, resulting in an improved yield. In this embodiment, the incline angle of the insulating layer 209 is shown as Θ in all cases, but it is also possible to change the incline angle.

[0039] Figures 7A to 7F illustrate the method for creating the second embodiment.

[0040] First, as shown in Figure 7A, a second pad electrode 121 is placed on top of the pad electrode 121. metal layer 302 is arranged, and an insulating layer 209 is formed on top of it.

[0041] Next, as shown in Figure 7B, a photoresist 501 is formed as a protective film for etching the insulating layer 209 using photolithography. The photoresist 501 has an opening set back from the pad opening boundary 218a. Here, the end of the opening of the photoresist 501 is defined as the photoresist opening boundary 501a. Up to this point, it is the same as in the first embodiment.

[0042] Subsequently, isotropic etching is performed on the insulating layer 209 as shown in Figure 7C. The difference from the first embodiment is that the etching is stopped midway through the insulating layer 209. By processing with isotropic etching, the insulating layer 209 takes on a shape with an inclination angle Θ with respect to the pad electrode 121. After etching the insulating layer 209, the photoresist 501 is removed.

[0043] Next, as shown in Figure 7D, the insulating layer 209 is further etched using photolithography to form a photoresist 503 as a protective film for forming openings. Here, the edge of the opening in the photoresist 503 is defined as the photoresist opening boundary 503a. The photoresist opening boundary 503a is the same as the pad opening boundary 218a and the photoresist opening boundary 501 Its distinguishing feature is its position between a and a.

[0044] Next, as shown in Figure 7E, the insulating layer 209 is further isotropically etched to form an opening. Since the photoresist opening boundary 503a is located between the pad opening boundary 218a and the photoresist opening boundary 501a, a portion with an inclination angle Θ is formed inside the inclined portion formed in Figure 7C. By performing this processing, a structure in which the insulating layer 209 has two inclinations can be created. In this embodiment, the case in which the two inclination angles are equal is shown by performing two isotropic etchings under the same conditions, but it is also possible to make the inclination angles of the two inclinations somewhat different by using different conditions. Furthermore, it is possible to create three or more inclinations by increasing the number of isotropic etchings.

[0045] Next, as shown in Figure 7F, a sealing layer 214 is formed on the insulating layer 209 and the upper layer of the opening in the insulating layer 209. Because the insulating layer 209 has two inclines, two inclines are also formed on the sealing layer 214. Here, the incline angle of the sealing layer 214 is denoted as Θ'.

[0046] Subsequently, the pad opening 218 is formed in the same manner as in the first embodiment.

[0047] With this manufacturing method, it is possible to form a structure like that of the second embodiment.

[0048] (Example 3) Other examples of organic EL devices having a sealing structure for the pad openings similar to that of the above embodiment will be described.

[0049] [Organic EL [Configuration of light-emitting elements] organic EL The light-emitting element is provided on a substrate by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode. A protective layer, a color filter, a microlens, etc., may be provided on the cathode. If a color filter is provided, a planarization layer may be provided between it and the protective layer. The planarization layer can be made of acrylic resin or the like. The same applies when a planarization layer is provided between the color filter and the microlens.

[0050] [substrate] Examples of substrates include quartz, glass, silicon wafers, resins, and metals. The substrate may also be equipped with switching elements such as transistors and wiring, and an insulating layer may be provided on top of them. The insulating layer can be made of any material that allows for the formation of contact holes between it and the first electrode, while ensuring insulation from wiring that is not connected. For example, resins such as polyimide, silicon oxide, and silicon nitride can be used.

[0051] [electrode] A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with the higher potential is the anode, and the other is the cathode. Alternatively, the electrode that supplies holes to the light-emitting layer can be the anode, and the electrode that supplies electrons can be the cathode.

[0052] For the anode, materials with the largest possible work function are preferable. For example, elemental metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, or mixtures containing these metals, or alloys combining them. It can be used. Also, Metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0053] These electrode materials may be used individually or in combination of two or more. Furthermore, the anode may consist of a single layer or multiple layers.

[0054] When used as a reflective electrode, materials such as chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. It is also possible to use the above materials as a reflective film without serving as an electrode. Furthermore, when used as a transparent electrode, oxide transparent conductive layers such as indium tin oxide (ITO) or indium zinc oxide can be used, but are not limited to these. Photolithography can be used to form the electrodes.

[0055] On the other hand, materials with a small work function are preferred for the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and elemental metals or mixtures containing aluminum, titanium, manganese, silver, lead, and chromium. Alternatively, alloys combining these elemental metals can also be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials may be used individually or in combination of two or more. The cathode may also be a single-layer or multi-layer structure. Among these, silver is preferred, and a silver alloy is even more preferred to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the ratio of silver to other metals may be 1:1, 3:1, etc.

[0056] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using DC and AC sputtering methods is more preferable because it provides good film coverage and makes it easier to reduce resistance.

[0057] [Pixel separation layer] The pixel separation layer is formed from a silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) film, which is formed using chemical vapor deposition (CVD). To increase the in-plane resistance of the organic compound layer, it is preferable that the thickness of the organic compound layer, particularly the hole transport layer, be thinly deposited on the sidewalls of the pixel separation layer. Specifically, by increasing the taper angle of the sidewalls of the pixel separation layer and the thickness of the pixel separation layer, the vignetting during deposition can be increased, thereby thinning the film thickness on the sidewalls.

[0058] On the other hand, it is preferable to adjust the taper angle of the sidewalls of the pixel isolation layer and the thickness of the pixel isolation layer to such an extent that no voids are formed in the protective layer formed on top of it. Since no voids are formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, reliability degradation such as the occurrence of dark spots and poor conductivity of the second electrode can be reduced.

[0059] According to this embodiment, charge leakage to adjacent pixels can be effectively suppressed even if the taper angle of the sidewall of the pixel isolation layer is not steep. This study found that sufficient reduction is possible when the taper angle is in the range of 60 to 90 degrees. The thickness of the pixel isolation layer is preferably between 10 nm and 150 nm. Similar effects can be obtained even if the device consists only of pixel electrodes without a pixel isolation layer. However, in this case, it is preferable to make the thickness of the pixel electrode less than half the thickness of the organic layer, or to make the pixel electrode ends have a forward taper of less than 60°, as this reduces short circuits in the organic light-emitting element.

[0060] [Organic compound layer] The organic compound layer may be formed as a single layer or as multiple layers. If there are multiple layers, they may be called a hole injection layer, a hole transport layer, an electron blocking layer, an emissive layer, a hole blocking layer, an electron transport layer, or an electron injection layer, depending on their function. The organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms and inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be placed between the first electrode and the second electrode, or it may be placed in contact with the first electrode and the second electrode.

[0061] The organic compound layer If there are multiple light-emitting layers, between the first light-emitting layer and the second light-emitting layer Charge generation unit The charge generation section may have an organic compound with a minimum unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when the charge generation section is located between the second and third light-emitting layers.

[0062] [Protective layer] A protective layer may be provided on the second electrode. For example, by bonding glass with a desiccant to the second electrode, the intrusion of water and other substances into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and other substances into the organic compound layer. For example, after forming the cathode, the material may be transported to another chamber without breaking the vacuum, and a silicon nitride film with a thickness of 2 μm may be formed by the CVD method to serve as a protective layer. A protective layer may also be provided using atomic layer deposition (ALD) after the film formation by the CVD method. The material of the film formed by the ALD method is not limited, but may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed on the film formed by the ALD method by the CVD method. The film formed by the ALD method may have a thinner film thickness than the film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.

[0063] [Color Filter] A color filter may be provided on top of the protective layer. For example, a color filter that takes into account the size of the organic light-emitting element may be provided on a separate substrate and bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer as described above using photolithography technology. The color filter may be made of polymer.

[0064] [Planarization layer] A planarizing layer may be provided between the color filter and the protective layer. The planarizing layer is provided to reduce the unevenness of the layer below. It may also be called a material resin layer without limiting its purpose. The planarizing layer may be composed of an organic compound, which may be low molecular weight or high molecular weight, but high molecular weight is preferred.

[0065] The planarization layer may be provided above or below the color filter, and its constituent materials may be the same or different. Specifically, examples include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, urea resin, etc.

[0066] [Microlens] An organic light-emitting device may have optical elements such as microlenses on its light-emitting side. Microlenses may be made of acrylic resin, epoxy resin, or the like. The purpose of the microlenses may be to increase the amount of light extracted from the organic light-emitting device and to control the direction of the extracted light. Microlenses may have a hemispherical shape. If they have a hemispherical shape, among the tangents touching the hemisphere, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be similarly determined in any cross-sectional view. In the cross-sectional view, among the tangents that touch the semicircle of the microlens, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the semicircle is the vertex of the microlens.

[0067] Furthermore, the midpoint of a microlens can also be defined. In the cross-section of a microlens, a line segment can be imagined from the point where one arc ends to the point where another arc ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross-section used to determine the vertices and midpoints may be a cross-section perpendicular to the insulating layer.

[0068] A microlens has a first surface with a convex portion and a second surface opposite to the first surface. It is preferable that the second surface is positioned closer to the functional layer than the first surface. To adopt such a configuration, it is necessary to form the microlens on the light-emitting device. If the functional layer is an organic layer, it is preferable to avoid processes that involve high temperatures during the manufacturing process. Furthermore, when adopting a configuration in which the second surface is positioned closer to the functional layer than the first surface, it is preferable that the glass transition temperatures of all organic compounds constituting the organic layer are 100°C or higher, and more preferably 130°C or higher.

[0069] [Opposite substrate] A counter substrate may be provided on the planarized layer. The counter substrate is called a counter substrate because it is provided in a position corresponding to the aforementioned substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. The counter substrate may be the second substrate if the aforementioned substrate is referred to as the first substrate.

[0070] [Organic layer] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to this embodiment are formed by the method described below.

[0071] The organic compound layer constituting the organic light-emitting element in this embodiment can be formed using dry processes such as vacuum deposition, ionization deposition, sputtering, or plasma deposition. Alternatively, a wet process can be used instead of a dry process, in which the layer is formed by dissolving the compound in a suitable solvent and applying a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0072] When layers are formed using methods such as vacuum deposition or solution coating, crystallization is less likely to occur, resulting in excellent stability over time. Furthermore, when forming films using coating methods, it is possible to combine the film with an appropriate binder resin.

[0073] Examples of the binder resins mentioned above include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin.

[0074] Furthermore, these binder resins may be used individually as homopolymers or copolymers, or as a mixture of two or more types. Additionally, known additives such as plasticizers, antioxidants, and UV absorbers may be used in combination as needed.

[0075] [Pixel circuit] The light-emitting device may have a pixel circuit connected to a light-emitting element. The pixel circuit may be an active-matrix type that independently controls the light emission of a first light-emitting element and a second light-emitting element. The active-matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit includes a light-emitting element, a transistor that controls the light emission brightness of the light-emitting element, and a transistor that controls the light emission timing. The device may also have a capacitor to hold the gate voltage of a transistor that controls the luminescence, and a transistor for connecting to GND without going through the light-emitting element.

[0076] The light-emitting device has a display area and a peripheral area arranged around the display area. The display area has a pixel circuit, and the peripheral area has a display control circuit. The mobility of the transistors constituting the pixel circuit may be smaller than the mobility of the transistors constituting the display control circuit.

[0077] The slope of the current-voltage characteristics of the transistors constituting the pixel circuit can be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristic.

[0078] The transistors that make up the pixel circuit are transistors connected to light-emitting elements, such as the first light-emitting element.

[0079] [Pixels] The organic light-emitting device has multiple pixels. Each pixel has subpixels that emit light of a different color from the others. The subpixels may each have, for example, RGB light-emitting colors.

[0080] A pixel emits light in a region also called the pixel aperture. This region is the same as the first region. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0081] The distance between subpixels may be 10 μm or less, specifically 8 μm, 7.4 μm, or 6.4 μm.

[0082] Pixels can take on known arrangements in a plan view. For example, they may be in a stripe arrangement, delta arrangement, pentile arrangement, or Bayer arrangement. The shape of subpixels in a plan view may be any known shape. For example, rectangles, rhombuses, hexagons, etc. Of course, even if it is not a precise shape, if it is close to a rectangle, it is included in the category of rectangles. The shape of subpixels and the pixel arrangement can be used in combination.

[0083] [Organic according to this embodiment] EL Applications of light-emitting elements] Organic according to this embodiment EL Light-emitting elements can be used as components of display devices and lighting devices. Other applications include exposure light sources in electrophotographic image forming apparatuses, backlights in liquid crystal display devices, and light-emitting devices with a color filter in a white light source.

[0084] The display device may also be an image information processing device that has an image input unit for receiving image information from an area CCD, linear CCD, memory card, etc., an information processing unit for processing the input information, and displays the input image on the display unit.

[0085] Furthermore, the display unit of the imaging device or inkjet printer may have a touch panel function. The driving method for this touch panel function may be infrared, capacitive, resistive, or electromagnetic induction, and is not particularly limited. The display device may also be used as the display unit of a multifunction printer.

[0086] Next, the display device according to this embodiment will be described with reference to the drawings.

[0087] Figure 8 is a schematic cross-sectional view showing an example of a display device having an organic light-emitting element and a transistor connected to this organic light-emitting element. The transistor is an example of an active element. The transistor may also be a thin-film transistor (TFT).

[0088] Figure 8(a) shows an example of a pixel, which is a component of the display device according to this embodiment. The pixel has subpixels 10. The subpixels are divided into 10R, 10G, and 10B based on their light emission. The light emission color is distinguished by the wavelength emitted from the light-emitting layer, but the subpixels 10 The light emitted from may be selectively transmitted or color-converted by a color filter or the like. 10 This consists of an interlayer insulating layer 1, a first electrode which is a reflective electrode 2, an insulating layer 3 covering the end of the reflective electrode 2, and an organic compound layer 4 covering the first electrode and the insulating layer. second It has an electrode 5, a protective layer 6, and a color filter 7.

[0089] The interlayer insulating layer 1 may have transistors and capacitive elements placed in the layer below or inside it. The transistor and the first electrode may be electrically connected via a contact hole or the like (not shown).

[0090] The insulating layer 3 is also called the bank or pixel isolation layer. The insulating layer 3 is It covers the end of the first electrode and is arranged to surround the first electrode. The portion without the insulating layer is in contact with the organic compound layer 4 and becomes the light-emitting region.

[0091] The organic compound layer 4 includes a hole injection layer 41, a hole transport layer 42, a first light-emitting layer 43, a second light-emitting layer 44, and an electron transport layer 45.

[0092] The second electrode 5 may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0093] The protective layer 6 is an organic compound layer. 4 Reduces moisture penetration. Protective layer 6 Although it is illustrated as a single layer, it may consist of multiple layers. Each layer may contain an inorganic compound layer and an organic compound layer.

[0094] Color filter 7 is divided into 7R, 7G, and 7B depending on the color. 7 It may be formed on a planarization film (not shown). Also, a color filter 7 A resin retainer not shown above It may have a protective layer. Also, a color filter. 7 It may be formed on the protective layer 6, or it may be provided on an opposing substrate such as a glass substrate and then bonded together.

[0095] The display device 100 in Figure 8(b) shows an organic light-emitting element 26 and a TFT 18 as an example of a transistor. A substrate 11 made of glass, silicon, etc., and an insulating layer 12 are provided on top of it. 12 An active element 18, such as a TFT, is arranged on top of the TFT, and the gate electrode 13, gate insulating film 14, and semiconductor layer 15 of the active element are arranged on top of it. The TFT 18 is also composed of a semiconductor layer 15, a drain electrode 16, and a source electrode 17. An insulating film 19 is provided on top of the TFT 18. 19 The anode 21 and source electrode 17 constituting the organic light-emitting element 26 are connected via a contact hole 20 provided therein.

[0096] Note that the method of electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 26 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the configuration shown in Figure 8(b). In other words, it is sufficient if either the anode or cathode is electrically connected to either the source electrode or the drain electrode of the TFT. TFT refers to a thin-film transistor.

[0097] In the display device 100 shown in Figure 8(b), the organic compound layer 22 Although it is illustrated as a single layer, the organic compound layer 22 may consist of multiple layers. An organic light-emitting element is placed on top of the cathode 23. 26 A first protective layer 24 and a second protective layer 25 are provided to reduce deterioration.

[0098] In the display device 100 shown in Figure 8(b), a transistor is used as the switching element, but other switching elements may be used instead.

[0099] Furthermore, the transistor used in the display device 100 in Figure 8(b) is not limited to a transistor using a single-crystal silicon wafer, but may also be a thin-film transistor having an active layer on an insulating surface of the substrate. Examples of active layers include non-single-crystal silicon such as single-crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin-film transistors are also called TFT elements.

[0100] The transistors included in the display device 100 in Figure 8(b) may be formed within a substrate such as a Si substrate. Here, "formed within a substrate" means that the transistors are manufactured by processing the substrate itself, such as a Si substrate. In other words, having transistors within a substrate can be seen as the substrate and transistors being formed as a single unit.

[0101] The organic light-emitting element according to this embodiment has its luminescence controlled by a TFT, which is an example of a switching element, and by providing multiple organic light-emitting elements on the surface, an image can be displayed using the luminescence of each element. The switching element according to this embodiment is not limited to a TFT, but may also be a transistor made of low-temperature polysilicon, or an active matrix driver formed on a substrate such as a Si substrate. "On the substrate" can also mean "within the substrate." Whether to provide a transistor within the substrate or to use a TFT is selected depending on the size of the display area; for example, if the size is about 0.5 inches, it is preferable to provide the organic light-emitting element on a Si substrate.

[0102] Figure 9 is a schematic diagram showing an example of a display device according to this embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. Transistors are printed on the circuit board 1007. The battery 1008 does not need to be provided if the display device is not a portable device, or it may be provided in a different location even if it is a portable device.

[0103] The display device according to this embodiment may have a color filter having red, green, and blue colors. The color filter may have the red, green, and blue colors arranged in a delta array.

[0104] The display device according to this embodiment may be used in the display unit of a mobile terminal. In that case, it may have both display and operation functions. Examples of mobile terminals include smartphones and other mobile phones, tablets, and head-mounted displays.

[0105] The display device according to this embodiment may be used in the display unit of an imaging device having an optical unit with multiple lenses and an image sensor that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the image sensor. Furthermore, the display unit may be a display unit exposed to the outside of the imaging device or a display unit located inside the viewfinder. The imaging device may be a digital camera or a digital video camera.

[0106] Figure 10(a) is a schematic diagram showing an example of an imaging device according to this embodiment. The imaging device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have a display device according to this embodiment. In that case, the display device may display not only the image to be captured, but also environmental information, imaging instructions, etc. Environmental information may include the intensity of ambient light, the direction of ambient light, the speed at which the subject is moving, the possibility of the subject being obscured by an obstacle, etc.

[0107] Since the optimal timing for imaging is very short, it is best to display the information as quickly as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention, because organic light-emitting elements have a fast response speed. Display devices using organic light-emitting elements can be used more suitably than liquid crystal display devices, which require a fast display speed.

[0108] The imaging device 1100 has an optical section (not shown). The optical section has multiple lenses that form an image on the image sensor housed in the housing 1104. The focus can be adjusted by adjusting the relative positions of the multiple lenses. This operation can also be performed automatically. The imaging device may also be called a photoelectric converter. The photoelectric converter may not capture images sequentially, but may include imaging methods such as detecting the difference from the previous image or extracting from an image that is always being recorded.

[0109] Figure 10(b) is a schematic diagram showing an example of an electronic device according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type response unit. The operation unit may also be a biometric recognition unit that recognizes fingerprints to unlock or otherwise perform actions. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. Images captured by the camera function are displayed on the display unit. Examples of electronic devices include smartphones and laptop computers.

[0110] Figures 11(a) and 11(b) are schematic diagrams showing an example of a display device according to this embodiment. Figure 11(a) is a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device according to this embodiment may be used for the display unit 1302.

[0111] The display device 1300 is It has a frame 1301 and a base 1303 that supports the display unit 1302. The base 1303 is not limited to the form shown in Figure 11(a). The bottom edge of the frame 1301 may also serve as the base.

[0112] Furthermore, the frame 1301 and the display section 1302 may be curved. Their radius of curvature may be between 5000 mm and 6000 mm.

[0113] Figure 11(b) is a schematic diagram showing another example of the display device according to this embodiment. The display device 1310 in Figure 11(b) is configured to be foldable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may have light-emitting devices according to this embodiment. The first display unit 1311 and the second display unit 1312 may be a single display device without seams. The first display unit 1311 and the second display unit 1312 can be separated at a bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or the first and second display units may together display a single image.

[0114] Figure 12(a) is a schematic diagram showing an example of a lighting device according to this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion section 1405. 1402 The organic light-emitting element according to this embodiment may be included. The optical filter may be a filter that improves the color rendering of the light source. Light diffusion section 1405 This effectively diffuses light from a light source, such as for illumination, allowing light to reach a wide area. The optical filter and light diffusion section may be provided on the light output side of the lighting fixture. A cover may be provided on the outermost part as needed.

[0115] The lighting device is, for example, a device for illuminating a room. The lighting device may emit white light, cool white light, or any other color from blue to red. It may have a dimming circuit to adjust the brightness of these lights. The lighting device may have the organic light-emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit that converts AC voltage to DC voltage. White light has a color temperature of 4200K, and cool white light has a color temperature of 5000K. The lighting device may have a color filter.

[0116] Furthermore, the lighting device according to this embodiment may have a heat dissipation section. The heat dissipation section releases heat from inside the device to the outside, and examples include metals with high specific heat, liquid silicon, etc.

[0117] Figure 12(b) is a schematic diagram of an automobile, which is an example of a mobile body according to this embodiment. The automobile has a taillight, which is an example of a lighting device. The automobile 1500 has a taillight 1501, and may be configured to illuminate when the brakes are applied or the like.

[0118] The tail lamp 1501 may have an organic light-emitting element according to this embodiment. 1501 The device may have a protective member to protect the organic EL element. The protective member has a reasonably high strength and is transparent, so the material is not limited, but it is preferably made of polycarbonate or the like. The polycarbonate may be mixed with a flangic acid derivative, an acrylonitrile derivative, or the like.

[0119] The automobile 1500 may have a body 1503 and windows 1502 attached thereto. The windows may be transparent displays, unless they are windows for checking the front and rear of the automobile. The transparent displays may have organic light-emitting elements according to this embodiment. In this case, the constituent materials such as electrodes of the organic light-emitting element are made of transparent members.

[0120] The mobile body according to this embodiment has a drive unit such as an engine or motor, and means of movement such as wheels, propellers, or tires. Specifically, it may be an automobile, ship, aircraft, drone, bicycle, railway vehicle, etc. The mobile body may have a body and a light fixture provided on the body. The light fixture may emit light to indicate the position of the body. The light fixture has an organic light-emitting element according to this embodiment.

[0121] Referencing Figures 13(a) and 13(b), examples of applications of the display devices of each embodiment described above will be explained. The display devices can be applied to systems that can be worn as wearable devices, such as smart glasses, HMDs, and smart contact lenses. The imaging display device used in such applications comprises an imaging device capable of photoelectric conversion of visible light and a display device capable of emitting visible light.

[0122] Figure 13(a) illustrates a pair of glasses 1600 (smart glasses) according to one application example. An imaging device 1602, such as a CMOS sensor or SPAD, is provided on the front surface of the lens 1601 of the glasses 1600. In addition, the display devices of each embodiment described above are provided on the back surface of the lens 1601.

[0123] The eyeglasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that provides power to the imaging device 1602 and the display device according to each embodiment. The control device 1603 also controls the operation of the imaging device 1602 and the display device. The lens 1601 has an optical system formed therein for focusing light onto the imaging device 1602.

[0124] Figure 13(b) illustrates a pair of glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612. The control device 1612 is equipped with an imaging device equivalent to an imaging device 1602 and a display device. An optical system is formed in the lens 1611 for projecting the light emitted by the display device in the control device 1612, and an image is projected onto the lens 1611. The control device 1612 supplies power to the imaging device and the display device. It functions as a power source and controls the operation of the imaging device and display device. The control device may have a gaze detection unit that detects the wearer's gaze. Gaze detection may use infrared light. The infrared light emitter emits infrared light towards the user's eyeball that is fixated on the displayed image. The imaging unit, which has a light-receiving element, detects the reflected light from the eyeball of the emitted infrared light, thereby obtaining an image of the eyeball. By having a reduction means that reduces the light from the infrared light emitter to the display unit in a planar view, the degradation of image quality is reduced.

[0125] The user's gaze towards the displayed image is detected from an image of the eyeball obtained by imaging with infrared light. Any known method can be applied to gaze detection using an image of the eyeball. For example, a gaze detection method based on the Purkinje image obtained by the reflection of the irradiated light from the cornea can be used.

[0126] More specifically, gaze detection processing is performed based on the pupil-corneal reflection method. Using the pupil-corneal reflection method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image contained in the captured image of the eyeball, thereby detecting the user's gaze.

[0127] A display device according to one embodiment of the present invention includes an imaging device having a light-receiving element, and may control the display image of the display device based on the user's gaze information from the imaging device.

[0128] Specifically, the display device determines a first display area that the user is fixated on, and a second display area other than the first display area, based on gaze information. The first and second display areas may be determined by the control device of the display device, or they may be determined by an external control device and received. Within the display areas of the display device, the display resolution of the first display area may be controlled to be higher than the display resolution of the second display area. In other words, the resolution of the second display area may be lower than that of the first field of view area.

[0129] Furthermore, the display area has a first display area and a second display area different from the first display area, and based on gaze information, the area with higher priority is determined from the first display area and the second display area. The first and second view areas may be determined by the control device of the display device, or they may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of the areas other than the high-priority area. In other words, the resolution of areas with relatively lower priority may be lowered.

[0130] AI may be used to determine the first display area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to the target object at the end of the gaze, using an image of the eyeball and the direction the eyeball was actually looking in that image as training data. The AI ​​program may be installed in the display device, the imaging device, or an external device. If installed in an external device, it is transmitted to the display device via communication.

[0131] When display control is based on visual detection, this method is preferably applicable to smart glasses that further include an imaging device for capturing images of the surrounding environment. The smart glasses can display the captured external information in real time.

[0132] Figure 14(a) bi1 Figure 4(b) represents an image forming apparatus according to one embodiment of the present invention. Figure 14(a) is a schematic diagram of an image forming apparatus 1700 according to one embodiment of the present invention. Image forming apparatus 1700 It comprises a photoreceptor, an exposure light source, a developing unit, a charging unit, a transfer unit, a transport roller, and a fuser.

[0133] Light 1729 is irradiated from the exposure light source 1728, and an electrostatic latent image is formed on the surface of the photoreceptor 1727. This exposure light source has an organic light-emitting element according to the present invention. The developing unit 1731 has toner or the like. The charging unit 1730 charges the photoreceptor. The transfer unit 1732 transfers the developed image to the recording medium 1734. The transport unit 1733 transports the recording medium 1734. The recording medium 1734 is, for example, paper. The fixing unit 1735 is the recording medium 1734 The formed image is then fixed in place.

[0134] Figures 14(b) and 14(c) are schematic diagrams showing how multiple light-emitting units 1738 are arranged on a long substrate with an exposure light source 1728. 1737 is parallel to the axis of the photoreceptor and represents the column direction in which the organic light-emitting elements are arranged. This column direction is the same as the direction of the axis of rotation of the photoreceptor 1727. This direction can also be called the long axis direction of the photoreceptor.

[0135] Figure 14(b) shows a configuration in which the light-emitting units are arranged along the long axis of the photoreceptor. Figure 14(c) shows a different configuration from (b), in which the light-emitting units are arranged alternately in the column direction in the first and second columns. The first and second columns are positioned at different locations in the row direction.

[0136] The first column has multiple light-emitting units arranged at intervals. The second column has light-emitting units at positions corresponding to the intervals between the light-emitting units in the first column. In other words, multiple light-emitting units are also arranged at intervals in the row direction.

[0137] The arrangement in Figure 14(c) can also be described as a grid pattern, a houndstooth pattern, or a checkerboard pattern.

[0138] As described above, by using the device employing the organic light-emitting element according to this embodiment, stable display with good image quality is possible even during long-term display.

[0139] (Other examples) Although the above describes an example using an organic EL element as the light-emitting element, it can also be applied to light-emitting devices using light-emitting elements other than organic EL elements. Even in light-emitting devices using light-emitting elements other than organic EL elements, the pad electrodes are exposed to etching only once, when etching the sealing layer, thus reducing the amount of pad electrode abrasion. This makes it possible to obtain high reliability against corrosion of the pad electrodes caused by prolonged immersion in water during the dicing process of the mounting process, for example. [Explanation of Symbols]

[0140] 100: Display device 110: Pixel array 120: Pad placement area 121: Pad electrode 209: Insulating film 214: Sealing layer 218: Pad opening

Claims

1. A pixel region having multiple light-emitting elements, A peripheral region including an electrode terminal for electrically connecting to an external terminal, a first insulating layer disposed on the electrode terminal, and a second insulating layer disposed on the first insulating layer, It has, The electrode terminal comprises a first metal layer exposed by a first opening provided in the first insulating layer, and a second metal layer disposed on top of the first metal layer. The upper surface of the first insulating layer is inclined with respect to the lower surface of the first metal layer at the end on the side of the first opening. The second insulating layer has a second opening within the first opening, Within the first opening, the second metal layer is disposed between the first metal layer and the second insulating layer. Within the first opening, the second insulating layer is in contact with the second metal layer. The first metal layer is exposed by the second opening. The first metal layer contains aluminum. A light-emitting device characterized by the following features.

2. The aforementioned second insulating layer functions as a sealing layer. The light-emitting device according to feature 1.

3. The upper surface of the sealing layer has a portion that is inclined with respect to the first metal layer. The light-emitting device according to feature 2.

4. The upper surface of the sealing layer is parallel to the first metal layer in the region adjacent to the first opening. The light-emitting device according to feature 2.

5. The sealing layer has a three-layer structure in which an oxide film layer is sandwiched between insulating layers. The light-emitting device according to feature 2.

6. The end of the first insulating layer is spaced apart from the second opening in a plan view. The light-emitting device according to feature 1.

7. The first metal layer contains copper, The light-emitting device according to feature 1.

8. The second metal layer comprises titanium or titanium nitride. The light-emitting device according to feature 7.

9. The inclination of the first insulating layer with respect to the first metal layer has an inclination angle of 20 degrees or more and 50 degrees or less. The light-emitting device according to feature 1.

10. The second insulating layer includes a first inclined portion whose upper surface is inclined with respect to the first metal layer, a parallel portion whose upper surface is parallel to the first metal layer, and a second inclined portion whose upper surface is inclined with respect to the first metal layer. The light-emitting device according to feature 1.

11. The moisture permeability of the first insulating layer is greater than that of the sealing layer. The light-emitting device according to feature 2.

12. The first metal layer has a recess in the portion of the second opening, and the depth of the recess is 1 nm or more and 100 nm or less. The light-emitting device according to feature 1.

13. The aforementioned light-emitting element is an organic EL light-emitting element. The light-emitting device according to feature 1.

14. A display device comprising a display panel including a light-emitting device according to any one of claims 1 to 13, and a frame comprising the display panel and a circuit board.

15. It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays the image captured by the image sensor. The photoelectric conversion device is characterized in that the display unit has a light-emitting device according to any one of claims 1 to 13.

16. It comprises a housing on which a display unit is provided, and a communication unit provided in the housing for communicating with the outside, The display unit is an electronic device characterized by having a light-emitting device according to any one of claims 1 to 13.

17. It comprises a light source and a light diffusing section or optical film configured to allow light generated by the light source to pass through, The lighting device is characterized in that the light source has a light-emitting device according to any one of claims 1 to 13.

18. A mobile body comprising: an illumination device including a light-emitting device according to any one of claims 1 to 13; and a main body equipped with the illumination device.

19. An image sensor provided on the front side of the lens, and provided on the back side of the lens, as in claim 1. A device comprising a display device having a light-emitting device as described in any one of items 13 to 14.

20. It comprises a photosensitive member and an exposure light source facing the photosensitive member, The illumination device is characterized in that the exposure light source has the light-emitting device described in any one of claims 1 to 13.

21. The process of forming the first metal layer, A step of forming a second metal layer on the first metal layer, A step of forming a first insulating layer on the second metal layer, A step of isotropically etching the first insulating layer to form a first opening in the first insulating layer, A step of forming a second insulating layer on the first insulating layer and the second metal layer, The process involves anisotropically etching the second insulating layer to form a second opening in the second insulating layer, and exposing the first metal layer at the second opening. It has, In the step of forming the first opening in the first insulating layer, the first insulating layer is isotropically etched using the second metal layer as an etching stop layer. A method for manufacturing a light-emitting device, characterized by the above.

22. The process further comprises anisotropically etching the second insulating layer, and then etching the second metal layer to expose the first metal layer at the second opening. A method for manufacturing a light-emitting device according to the feature described in 21.

Images