Gap pumping of substrate support to prevent glow discharge and ignition.

Abstract

An embodiment of a substrate support for use in a substrate processing chamber is provided herein. In some embodiments, the substrate support for use in a substrate processing chamber includes a pedestal having a first surface configured to support a substrate and a second surface opposite the first surface, a plurality of substrate lift pins extending through the pedestal, a plurality of first gaps being disposed between the plurality of substrate lift pins and respective ones of a plurality of substrate lift pin openings of the pedestal, and a vacuum line extending from the plurality of substrate lift pin openings and configured to pump down the plurality of substrate lift pin openings.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to substrate processing equipment.

Background Art

[0002]

[0002] A substrate processing system typically includes a process chamber for performing a desired process, such as an etching process, on one or more substrates disposed therein. For example, in an etching process that requires very high aspect ratio holes for forming contacts or deep trenches for laying infrastructure for electrical paths, RF power can be used for plasma generation and / or to generate a bias voltage on the substrate being processed to attract ions from the bulk plasma.

[0003]

[0003] A substrate support is disposed in a substrate processing chamber and configured to support the substrate being processed. However, when exposed to plasma or when there is a sufficiently high local electric field in a gap / cavity, a gap or cavity in the substrate support that is not under vacuum pressure can make glow discharge and lighting likely to occur. Therefore, the inventors have provided embodiments of an improved substrate support.

Summary of the Invention

[0004]

[0004] Embodiments of a substrate support for use in a substrate processing chamber are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a pedestal having a first surface configured to support a substrate and a second surface opposite the first surface, and a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are disposed between each of the plurality of substrate lift pins and one of the plurality of substrate lift pin openings of the pedestal, the plurality of substrate lift pins, and a vacuum line extending from the plurality of substrate lift pin openings and configured to pump down the plurality of substrate lift pin openings.

[0005]

[0005] In some embodiments, a process chamber for processing a substrate includes a chamber body defining a processing area inside; a substrate support disposed in the chamber body and having an upper surface exposed to the processing area, the substrate support having a first surface configured to support the substrate and a second surface opposite to the first surface; a substrate support including a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are located between the plurality of substrate lift pins and each of the plurality of substrate lift pin openings of the pedestal; and a vacuum pump coupled to each of the plurality of first gaps via a vacuum line extending to the plurality of substrate lift pin openings, the vacuum pump configured to pump down the plurality of first gaps without pumping down the processing area.

[0006]

[0006] In some embodiments, a process chamber for processing a substrate includes a chamber body defining a processing area inside; a substrate support disposed in the chamber body and having an upper surface exposed to the processing area, the substrate support having a dielectric plate including electrodes and a cooling plate coupled to the dielectric plate; a plurality of substrate lift pins penetrating the dielectric plate and extending through the cooling plate, wherein a plurality of first gaps include a plurality of substrate lift pins disposed between the plurality of substrate lift pins and a plurality of substrate lift pin openings in the dielectric plate and the cooling plate, respectively; a vacuum pump coupled to each of the plurality of first gaps and configured to pump down the plurality of first gaps to a first pressure; and a second vacuum pump coupled to the chamber body and configured to pump down the processing area to a process pressure, wherein the first pressure is less than the process pressure.

[0007]

[0007] In some embodiments, the substrate processing method includes pumping down the processing area of ​​the process chamber to the process pressure and pumping down a plurality of first gaps arranged around a plurality of substrate lift pins to a first pressure below the process pressure.

[0008]

[0008] Further embodiments of the present disclosure are described below.

[0009]

[0009] By referring to exemplary embodiments of the present disclosure shown in the accompanying drawings, embodiments of the present disclosure summarized above and described in more detail below can be understood. However, the accompanying drawings only illustrate typical embodiments of the present disclosure and should not be considered limiting, and the present disclosure may also permit other equally valid embodiments. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic cross-sectional side view showing a process chamber according to at least some embodiments of the present disclosure. [Figure 2] This is a schematic cross-sectional side view showing a substrate support according to at least some embodiments of the present disclosure. [Figure 3] This is a cross-sectional side view showing a portion of a substrate support according to at least some embodiments of the present disclosure. [Modes for carrying out the invention]

[0011]

[0013] For ease of understanding, the same reference numerals are used to indicate identical elements common to all drawings whenever possible. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment can be usefully incorporated into other embodiments without further detail.

[0012]

[0014] Embodiments of a substrate support having a dedicated pump for gap pumping to prevent glow discharge and ignition are provided herein. The substrate support is generally placed in a process chamber, with the upper surface of the substrate support exposed to the processing area. To advantageously prevent gas dielectric breakdown, a dedicated pump may be placed in the substrate support and configured to pump down various cavities or gaps, separate from, for example, a pump configured to pump down the processing area of ​​the process chamber. The cavities may be gaps between various moving parts of the substrate support, gaps to accommodate thermal expansion between various parts of the substrate support, etc. For example, the cavity may be the gap between a lift pin and a lift pin opening. In another example, the cavity may be the gap between a power electrode and an insulator surrounding the power electrode. Advantageously, the dedicated gap pump can achieve a pressure reduction in the cavity that can be achieved using any pump used to exhaust process chemicals from the process chamber. A dedicated gap pump can also minimize the backflow of process chemicals from the processing area into the cavity compared to using a single pump for exhausting process chemicals and gap pumping.

[0013]

[0015] Figure 1 is a schematic cross-sectional side view showing a process chamber according to at least some embodiments of the present disclosure. In some embodiments, the plasma processing chamber is an etching processing chamber. However, other types of processing chambers configured for different processes can also be used or modified for use with the substrate support embodiments described herein.

[0014]

[0016] The process chamber, or chamber 100, may be a vacuum chamber suitably adapted to maintain a pressure lower than atmospheric pressure within the internal region 121 during substrate processing. The chamber 100 includes a chamber body 106 covered by a lid 101 surrounding a processing region 119 located in the upper half of the internal region 121. The chamber 100 also includes one or more shields (not shown) surrounding various chamber components to prevent unwanted reactions between the components and the ionized process material. The chamber body 106 and the lid 101 may be made of a metal such as aluminum. The chamber body 106 may be grounded via a connection to ground 115.

[0015]

[0017] For example, a substrate support 124 is positioned within an internal region 121 to support and hold a substrate 122, such as a semiconductor wafer or other wafer. The substrate support 124 may generally include a pedestal 150 positioned on a base plate 102. The pedestal 150 includes a first surface 146 configured to support the substrate and a second surface 149 opposite the first surface 146. The upper surface of the substrate support 124 (e.g., the first surface 146 of the pedestal 150) is exposed to the processing region 119. In some embodiments, the pedestal includes a dielectric plate 152 positioned on a cooling plate 120 and coupled to the cooling plate 120.

[0016]

[0018] The dielectric plate 152 may include one or more chucking electrodes (see one or more chucking electrodes 210 in Figure 2) configured to electrostatically chuck the substrate 122 to the dielectric plate 152. The one or more chucking electrodes 210 may be unipolar or bipolar. In some embodiments, the substrate support 124 includes one or more process kit components, such as an edge ring 185. In some embodiments, the edge ring 185 is positioned on the pedestal 150 and configured to surround the substrate 122. In some embodiments, one or more chucking electrodes may also electrostatically chuck the edge ring 185 to the dielectric plate 152.

[0017]

[0019] The cooling plate 120 includes cooling channels 154 configured to circulate a coolant to cool the dielectric plate 152. In some embodiments, the cooling channels 154 are located below the dielectric plate 152 and the edge ring 185. In some embodiments, the cooling plate 120 is made of a conductive material such as aluminum (Al). In some embodiments, the cooling plate 120 is placed on and bonded to an insulating plate 126. In some embodiments, the insulating plate 126 is placed on a base plate 102. In some embodiments, the insulating plate 226 is made of aluminum oxide (Al2O3) or a polymer, such as polyphenylene sulfide (PPS).

[0018]

[0020] In some embodiments, the base plate 102, together with the chamber body 106, defines a lower region 180 of the chamber 100 below the base plate 102. In some embodiments, the lower region 180 may be at atmospheric pressure during use. Various conduits extend to the pedestal 150 to supply, for example, back gas, process gas, fluid, coolant, power, etc. to the pedestal 150. In some embodiments, various conduits may extend through the lower region 180.

[0019]

[0021] In some embodiments, various conduits may include conduits for the back gas supply section 141, the chucking power supply 140, the RF plasma power supply 170, and the bias power supply 117. The chucking power supply 140 may be coupled to one or more chucking electrodes 210 via the chucking electrode line 143. The RF plasma power supply 170 may be disposed in the chamber 100 via the lid 101 or the top of the chamber body 106, either as an alternative or additional provision. In some embodiments, the bias power supply 117 includes one or more RF bias power supplies. In some embodiments, the RF energy supplied by the RF plasma power supply 170 may have a frequency from about 400 kHz to over 40 MHz. In some embodiments, the RF plasma power supply 170 and the bias power supply 117 are coupled to the pedestal 150 via their respective RF matching networks (only the RF matching network 116 is shown). In some embodiments, the substrate support 124 may alternatively include AC, DC, or RF bias power. In some embodiments, the AC, DC, or RF bias power may be pulsed.

[0020]

[0022] The substrate support 124 includes a plurality of substrate lift pins 168 that extend through the substrate support 124 and are configured to selectively raise or lower the substrate 122. A plurality of first gaps 174 are located between the plurality of substrate lift pins 168 and each of the plurality of substrate lift pin openings 171 of the substrate support 124. In some embodiments, the substrate lift pin openings 171 extend through the dielectric plate 152 and the cooling plate 120. A plurality of substrate lift assemblies 128 are coupled to each of the plurality of substrate lift pins 168 and are configured to selectively raise or lower the plurality of substrate lift pins 168. In some embodiments, the plurality of substrate lift pins 168 consist of three lift pins arranged symmetrically around the substrate support 124.

[0021]

[0023] The vacuum pump 160 is coupled to each of the plurality of first gaps 174 via a vacuum line 166 extending from a plurality of substrate lift pin openings 171 to the vacuum pump 160. In some embodiments, the vacuum pump 160 is coupled to each of the plurality of first gaps 174 and configured to pump down the plurality of first gaps 174 to a first pressure. In some embodiments, the first pressure is less than about 10 mTorr. In some embodiments, the first pressure is less than about 1 mTorr. A control valve 145 can be coupled to the vacuum line 166 to control the pressure in the vacuum line 166. When in use, the vacuum pump 160 is configured to pump down the plurality of first gaps without pumping down the processing area 119. The vacuum line 166 may include any combination of a conduit located outside the substrate support 124 and a channel formed in the gap or cavity that penetrates the substrate support 124 and is pumped down.

[0022]

[0024] In some embodiments, the substrate support 124 may include a liner 104 positioned around or surrounding the pedestal 150. In some embodiments, one or more of the liner 104 and the base plate 102 are grounded during use. In some embodiments, the liner 104 includes an inner wall 103 and an outer wall 105 that define an annular channel 112 between them. In some embodiments, the inner wall 103 and the outer wall 105 are coupled to a lower plate 107 of the liner 104.

[0023]

[0025] Chamber 100 includes a second vacuum pump 114 fluidly coupled to the processing area 119 for exhausting the processing area 110. In some embodiments, the lower plate 107 includes one or more pump ports 158 coupled to the second vacuum pump 114 for exhausting the processing area 119. The pressure within the processing area 119 can be adjusted by adjusting the throttle valve of the second vacuum pump 114.

[0024]

[0026] The internal region 121 may include a second region 148 fluidly coupled to the processing region 119. In some embodiments, one or more pump ports 158 may extend into the second region 148. In some embodiments, the second region 148 is disposed below the substrate support 124 and upstream of the second vacuum pump 114. In some embodiments, the lower region 180 is disposed between the processing region 119 and the second region 148. In some embodiments, the second vacuum pump 114 is coupled to the chamber body 106 adjacent to the second region 148.

[0025]

[0027] A method of processing a substrate during use includes pumping down the processing region 119 of the process chamber 100 to a process pressure and pumping down a plurality of first gaps 174 disposed around a plurality of substrate lift pins 168 to a first pressure, the first pressure being less than the process pressure. For example, the second vacuum pump 114 is configured to pump down the processing region 119 to the process pressure, and the vacuum pump 160 is configured to pump down the plurality of first gaps 174 to the first pressure.

[0026]

[0028] In some embodiments, the vacuum pump 160 vents to the second region 148 via an exhaust line 162. In the above embodiment, the second vacuum pump 114 can evacuate the second region 148 including the exhaust contents of the vacuum pump 160. In some embodiments, the second vacuum pump 114 vents to a rough line 176. In some embodiments, the vacuum pump 160 vents to the rough line 176 via an exhaust line 164 independently of the second vacuum pump 114. For example, the vacuum pump 160 can vent to the rough line 176 at a first location 184, and the second vacuum pump 114 can vent to the rough line 176 at a second location 186 different from the first location 184. In another example, the vacuum pump 160 and the second vacuum pump 114 can vent to a T-shaped junction, and the exhaust from both the vacuum pump 160 and the second vacuum pump 114 can flow from the T-shaped junction to one location on the rough line 176.

[0027]

[0029] In some embodiments, the process kit components include a quartz ring 130 positioned around the pedestal 150, for example, around the dielectric plate 152 and the edge ring 185. The quartz ring 130 can promote process uniformity of the substrate 122. In some embodiments, the quartz ring 130 includes an upper inner edge with a notch configured to support the outer edge of the edge ring 185. In some embodiments, a lower edge ring 134 is positioned around the pedestal 150. In some embodiments, the lower edge ring 134 is positioned between the pedestal 150 and the liner 104. In some embodiments, the lower edge ring 134 is positioned below the quartz ring 130. In some embodiments, the lower edge ring 134 is made of quartz. In some embodiments, a second edge ring 218 may be positioned on the quartz ring 130 and surround the pedestal 150. The second edge ring 218 may be made of the same material as the edge ring 185.

[0028]

[0030] In some embodiments, a third gap (e.g., the third gap 224 in Figure 2) is located between the lower edge ring 134 and the pedestal 150. The third gap 224 allows for thermal expansion of one or more components of the pedestal 150. In some embodiments, a vacuum pump 160 is fluidically coupled to the third gap 224 to evacuate it. In some embodiments, the third gap 224 is fluidly coupled to the vacuum pump 160 via a channel 178 extending from one or more of a plurality of first gaps 174 to the third gap 224. In some embodiments, the channel 178 is located in the insulating plate 126. In some embodiments, the channel 178 extends radially outward from the first gap 174 to the third gap 224. By pumping down the third gap 224, glow-up and ignition in the third gap 224 are advantageously reduced or prevented. By pumping down the third gap 224, the third gap 224 can be widened, which advantageously reduces RF coupling between the pedestal 150 and components arranged around the pedestal 150, such as the lower ring 134. In some embodiments, the lower edge ring 134 may include a channel (not shown) extending from the third gap 224 to a fourth gap between the liner 104 and the lower edge ring 134 (e.g., the fourth gap 304 shown in Figure 3), so that a vacuum pump 160 can pump down the fourth gap. Thus, in some embodiments, a single pump (e.g., vacuum pump 160) can pump down various gaps or cavities located in the substrate support 124. In other embodiments, multiple vacuum pumps can be used to pump down various gaps or cavities located in the substrate support 124.

[0029]

[0031] In some embodiments, the pedestal 150 includes a gas distribution channel 138 extending from the bottom surface of the pedestal 150 (e.g., the bottom surface of the insulating plate 126) to various openings on the top surface of the pedestal 150. The gas distribution channel 138 is configured to supply back gas, which acts as a heat transfer medium such as nitrogen (N) or helium (He), to the top surface of the pedestal 150. The gas distribution channel 138 is fluidly connected to a back gas supply unit 141 via a gas conduit 142 to control the temperature and / or temperature profile of the pedestal 150 in use. In some embodiments, the gas distribution channel 138 is configured to provide gas pressure for heat transfer and temperature control of the edge ring 185, independently of the temperature of the dielectric plate 152. The back gas entering the plurality of first gaps 174 is pumped out by a vacuum pump 160.

[0030]

[0032] The processing area 119 is also coupled to and fluidly connected to a process gas supply unit 118, which can supply one or more process gases to the chamber 100 for processing the substrates placed within it. In some embodiments, the process gas supply unit 118 can supply one or more process gases to the processing area 119 via a showerhead (not shown) for more uniform gas distribution.

[0031]

[0033] The chamber 100 includes a slit valve 144 to facilitate the transfer of the substrate 122 in and out of the internal region 121. In some embodiments, a transfer robot (not shown) is configured to transfer the substrate 122. The transfer robot may also be advantageously configured to transfer the edge ring 185 in and out of the internal region 121 for replacement. The slit valve 144 may be coupled to the lid 101 or the chamber body 106.

[0032]

[0034] In the process, for example, plasma 192 may be generated in the processing area 119 to perform one or more processes. Plasma 192 may be generated by coupling power from a plasma power source (e.g., RF plasma power source 170) to the process gas via one or more electrodes near or within the processing area 119, thereby igniting the process gas and generating plasma 192. Bias power can be supplied to the pedestal 150 from a bias power source (e.g., bias power source 117) to attract ions from the plasma 192 toward the substrate 122. Bias power source 117 may supply bias power to the edge ring 185 and the dielectric plate 152. For example, bias power source 117 may include a single power source shared by both the edge ring 185 and the dielectric plate 152.

[0033]

[0035] Figure 2 is a schematic cross-sectional side view showing a substrate support according to at least some embodiments of the present disclosure. In some embodiments, a plurality of process kit lift pins 230 extend through the substrate support 124 and are configured to selectively raise or lower process kit components, such as edge rings 185. The plurality of process kit lift pins 230 are coupled to a process kit lift assembly 204 for raising or lowering the process kit components. In some embodiments, the plurality of process kit lift pins 230 include three lift pins arranged symmetrically around the substrate support 124. The substrate lift assembly 128 includes a plurality of first actuators 208. The process kit lift assembly 204 includes a plurality of second actuators 222.

[0034]

[0036] Multiple process kit lift pins 230 are generally located radially outward from multiple substrate lift pins 168. Multiple second gaps 232 are located between each of the multiple process kit lift pins 230 and one of the multiple process kit lift pin openings 234. In some embodiments, a vacuum pump 160 is coupled to each of the multiple second gaps 232 and configured to pump down the multiple second gaps 232 to a pressure of about 10 mTorr or less. In some embodiments, the multiple substrate lift pins 168 and the multiple process kit lift pins 230 are aligned along a common radius of the pedestal 150. In some embodiments, a channel 178 extends from one or more of the multiple second gaps 232 to a third gap 224. In some embodiments, the third gap 224 is sealed away from the processing area 119. For example, in some embodiments, a first O-ring 242 and a second O-ring 246 are positioned between the lower edge ring 134 and the pedestal 150, with a third gap 224 positioned between them.

[0035]

[0037] In some embodiments, the vacuum pump 160 is located in the lower region 180. In some embodiments, the vacuum pump 160 is coupled to the base plate 102. In some embodiments, the vacuum pump 160 is located between one of the substrate lift assemblies 128 and one of the process kit lift assemblies 204. In some embodiments, the vacuum line 166 includes one or more joints 280 of the substrate support 124 that divide the vacuum line 166 into a first vacuum line 282 extending into one of a plurality of first gaps 174 and a second vacuum line 284 extending into one of a plurality of second gaps 232. In some embodiments, one or more joints 280 are formed in the base plate 102. In some embodiments, the vacuum line 166 extends to the sidewalls of a plurality of substrate lift pin openings 171. In some embodiments, the vacuum line 166 extends to the sidewalls of a plurality of process kit lift pin openings 234.

[0036]

[0038] The edge ring 185 can advantageously extend the process environment beyond the diameter of the substrate 122. However, plasma 192 may enter any gap between the edge ring 185 and the substrate 122, potentially causing degradation of the dielectric plate 152. In some embodiments, an insert ring 216 is positioned in an annular groove on the upper surface of the dielectric plate 152 to protect the dielectric plate 152 from degradation. In some embodiments, the insert ring 216 is separate from the edge ring 185. In some embodiments, the insert ring 216 is formed integrally with the edge ring 185. In some embodiments, the edge ring 185 and the insert ring 216 may be made of silicon (Si), silicon nitride (SiN), silicon carbide (SiC), silicon oxide (SiO2), or quartz. In some embodiments, the edge ring 185 is made of a different material than the insert ring 216.

[0037]

[0039] In some embodiments, at least some of the various conduits arranged in the substrate support 124 may be arranged in the equipment cable 250. For example, the chucking electrode line 143 may extend through the equipment cable 250. In some embodiments, the equipment cable 250 extends through the lower region 180 to the substrate support 124. In some embodiments, the pedestal 150 includes an RF plate 206 positioned between the cooling plate 120 and the insulating plate 126. In some embodiments, the RF plate 206 is made of a metallic material, such as aluminum. The RF plate 206 is generally coupled to a bias power supply 117 to supply RF bias power to the pedestal 150. In some embodiments, the substrate support 124 includes a temperature probe 220 configured to measure the temperature of the dielectric plate 152.

[0038]

[0040] Figure 3 is a cross-sectional side view showing a portion of a substrate support 124 according to at least some embodiments of the present disclosure. In some embodiments, an insulating sleeve 308 is positioned around each of a plurality of substrate lift pin openings 171 and surrounding each of a plurality of substrate lift pins 168. A plurality of first gaps 174 extend between each of the insulating sleeves 308 and each of the plurality of substrate lift pins 168. In some embodiments, the insulating sleeve 308 is made of a polymer material and is configured to reduce or prevent arc discharge, glow discharge, or ignition in the plurality of first gaps 174. In some embodiments, the insulating sleeve 308 is positioned around each of a plurality of process kit lift pin openings 234 and surrounding each of a plurality of process kit lift pins 230, with a plurality of second gaps 232 extending between them. In some embodiments, a third O-ring 310 is positioned around each of the plurality of process kit lift pins 230 to provide a seal at the joint surface between the RF plate 206 and the insulating plate 126. In some embodiments, a fourth O-ring 316 is positioned around each of the multiple substrate lift pins 168 to provide a seal on the bonding surface between the RF plate 206 and the insulating plate 126.

[0039]

[0041] During use, when the substrate 122 is placed on or electrostatically chucked to the dielectric plate 152, the substrate 122 provides a first seal that separates the processing area 119 from a plurality of first gaps 174 and a plurality of second gaps 232. In some embodiments, a plurality of substrate lift pins 168 and a plurality of process kit lift pins 230 have upper parts 312 that taper outward to provide a second seal with the pedestal 150 when in the lowered position, further reducing the unintentional intrusion of process chemicals and / or heat transfer or cooling gases of the substrate into the gaps of the substrate support 124.

[0040]

[0042] While the above describes embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from its basic scope.

Claims

1. A substrate support for use in a substrate processing chamber, A pedestal having a first surface configured to support a substrate and a second surface opposite to the first surface, A plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are arranged between the plurality of substrate lift pins and each of the plurality of substrate lift pin openings of the pedestal, A vacuum line extending from the plurality of substrate lift pin openings and configured to pump down the plurality of substrate lift pin openings, A lower edge ring is positioned around the pedestal and forms a third gap between the lower edge ring and the pedestal. The vacuum line is configured to pump down the plurality of first gaps and the third gap, with a channel extending from at least one of the plurality of first gaps to the third gap and A substrate support comprising...

2. The substrate support according to claim 1, wherein the pedestal includes a dielectric plate having electrodes embedded therein and a cooling plate coupled to the dielectric plate, the cooling plate including cooling channels configured to circulate a coolant.

3. The substrate support according to claim 1, further comprising a plurality of process kit lift pins extending through the pedestal and arranged radially outward from the plurality of substrate lift pins, wherein a plurality of second gaps are arranged between the plurality of process kit lift pins and each of the plurality of process kit lift pin openings, and the vacuum line is configured to pump down the plurality of second gaps.

4. The substrate support according to claim 3, wherein the vacuum line includes a joint that divides the vacuum line into a first exhaust line formed inside the substrate support and extending into one of the plurality of first gaps, and a second exhaust line extending into one of the plurality of second gaps.

5. The vacuum line has a T-shaped joint formed within the pedestal, and the channel is connected to the T-shaped joint. The substrate support according to claim 1.

6. The substrate support according to claim 2, wherein the pedestal includes an insulating plate coupled to the cooling plate, and the channel is disposed on the insulating plate.

7. The substrate support according to any one of claims 1 to 6, further comprising a vacuum pump coupled to the vacuum line for pumping down the plurality of substrate lift pin openings.

8. The substrate support according to any one of claims 1 to 6, wherein the plurality of substrate lift pins have upper parts that are tapered outward to provide a seal with the pedestal when the plurality of substrate lift pins are in the lowered position.

9. The substrate support according to any one of claims 1 to 6, wherein the vacuum line extends to the side walls of the plurality of substrate lift pin openings.

10. A process chamber for processing substrates, A chamber body that defines the processing area inside, A substrate support according to any one of claims 1 to 6, which is disposed on the chamber body and has an upper surface exposed to the processing area, A vacuum pump is connected to each of the multiple first gaps via a vacuum line extending to multiple substrate lift pin openings. A process chamber equipped with a process chamber.

11. The process chamber according to claim 10, further comprising a second vacuum pump fluidly coupled to the processing area and configured to pump down the processing area.

12. The process chamber according to claim 11, wherein the chamber body is located below the substrate support and defines a second region fluidly coupled to the processing region, the second region being upstream of the second vacuum pump.

13. The process chamber according to claim 12, wherein the vacuum pump exhausts to the second region.

14. The process chamber according to claim 11, further comprising a coarse line, wherein the vacuum pump exhausts to the coarse line at a first position, and the second vacuum pump exhausts to the coarse line at a second position different from the first position.

15. A process chamber for processing substrates, A chamber body that defines the processing area inside, A substrate support according to any one of claims 1 to 6, which is disposed on the chamber body and has an upper surface exposed to the processing area, A first vacuum pump, coupled to each of the plurality of first gaps and configured to pump down the plurality of first gaps to a first pressure, A second vacuum pump is coupled to the chamber body and configured to pump down the processing area to process pressure. A process chamber equipped with a process chamber.

16. The process chamber according to claim 15, wherein the first vacuum pump exhausts to a second region upstream of the second vacuum pump, or to a coarse line independent of the second vacuum pump.

17. The process chamber according to claim 15, further comprising a plurality of process kit lift pins extending through a pedestal and arranged radially outward of a plurality of substrate lift pins, wherein a plurality of second gaps are arranged between the plurality of process kit lift pins and each of the plurality of process kit lift pin openings, and the first vacuum pump is coupled to each of the plurality of second gaps and configured to pump down the plurality of second gaps.

18. The process chamber according to claim 15, wherein the pedestal includes a dielectric plate having electrodes embedded therein and a cooling plate coupled to the dielectric plate, and the first vacuum pump is fluidly coupled to the third gap via the channel.

19. A first O-ring and a second O-ring are positioned between the lower edge ring and the pedestal, and the third gap is between the first O-ring and the second O-ring. The process chamber according to claim 18, further comprising the following:

20. The process chamber according to claim 15, wherein the chamber body defines a lower region located below the substrate support, and the first vacuum pump is located in the lower region.

Images