Surface treatment method, method for manufacturing a semiconductor substrate including the surface treatment method, surface treatment composition, and semiconductor substrate manufacturing system including the surface treatment composition

Abstract

To provide means enabling sufficient removal of residue which is present on a surface of a polished polishing target object including silicon oxide and includes inorganic oxide abrasive grains.SOLUTION: A surface treatment method is provided in which residues including inorganic oxide abrasive grains on a surface of a polished polishing target object including silicon oxide, is reduced using a surface treatment composition. The surface treatment composition includes: a zeta potential adjusting agent which has an sp value more than 9 and equal to or less than 11 and has a negatively charged functional group; and a dispersion media. The surface treatment method includes controlling a zeta potential of the silicon oxide to be negative and controlling a zeta potential of the inorganic oxide abrasive grains to be equal to or less than -30 mV by using the surface treatment composition.SELECTED DRAWING: None

Description

Technical Field

[0001] The present invention relates to a surface treatment method, a method for manufacturing a semiconductor substrate including the surface treatment method, a surface treatment composition, and a semiconductor substrate manufacturing system including the surface treatment composition.

Background Art

[0002] In recent years, with the multilayer wiring of the semiconductor substrate surface, when manufacturing devices, a so-called Chemical Mechanical Polishing (CMP) technology that polishes and planarizes the semiconductor substrate is used. CMP is, for example, a method of planarizing the surface of an object to be polished (workpiece), such as a semiconductor substrate, using a polishing composition (slurry) containing abrasive grains such as silica, alumina, and ceria, additives such as corrosion inhibitors and surfactants, etc. Examples of the object to be polished (workpiece) include silicon, polysilicon, silicon oxide film (silicon oxide), silicon nitride, wiring made of metal, etc., and plugs.

[0003] A large amount of impurities (also referred to as foreign substances or residues) remain on the surface of the semiconductor substrate after the CMP process. Examples of foreign substances include abrasive grains derived from the polishing composition used in CMP, organic substances such as corrosion inhibitors and surfactants, silicon-containing materials generated by polishing the silicon-containing material that is the object to be polished, metals generated by polishing metal wiring and plugs that are the objects to be polished, and organic substances such as pad debris generated from various pads.

[0004] When the surface of the semiconductor substrate is contaminated by these foreign substances, it may have an adverse effect on the electrical characteristics of the semiconductor and reduce the reliability of the device. Therefore, it is desirable to introduce a surface treatment process after the CMP process to remove these foreign substances from the surface of the semiconductor substrate.

[0005] As an example of a surface treatment composition used in such a cleaning process, Patent Document 1 discloses a semiconductor device substrate cleaning solution containing a polycarboxylic acid or hydroxycarboxylic acid, a sulfonic acid-type anionic surfactant, a carboxylic acid-type anionic surfactant, and water. According to this surface treatment composition, foreign matter can be removed without corroding the substrate surface. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2012-74678 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] However, the technology described in Patent Document 1 had the problem that foreign matter (residue) could not be sufficiently removed when cleaning (surface treatment) the polished object.

[0008] Here, the inventors investigated the relationship between the type of polished object and the type of foreign matter (residue). As a result, they found that inorganic oxide abrasive particles contained in the polishing composition used during polishing tend to adhere as residue to the surface of polished objects containing silicon oxide, which is particularly preferred as a semiconductor substrate, and that such residues containing inorganic oxide abrasive particles can cause a decrease in the performance of semiconductor devices.

[0009] This invention has been made in view of the above problems, and aims to provide a means that can sufficiently remove residue containing inorganic oxide abrasive particles present on the surface of a polished object containing silicon dioxide. [Means for solving the problem]

[0010] In view of the above problems, the inventors diligently conducted research. As a result, they found that a surface treatment method for reducing residue containing inorganic oxide abrasive particles on the surface of a polished object containing silicon oxide, using a surface treatment composition, wherein the surface treatment composition comprises a zeta potential adjusting agent having an sp value greater than 9 and less than or equal to 11 and a negatively charged functional group, and a dispersion medium, and the surface treatment composition controls the zeta potential of the silicon oxide to be negative and controls the zeta potential of the inorganic oxide abrasive particles to -30mV or less, thereby improving the effect of removing residue containing inorganic oxide abrasive particles on the surface of a polished object, and thus completed the present invention.

[0011] One aspect of the present invention for solving the above problems is a surface treatment method for reducing residue containing inorganic oxide abrasive particles on the surface of a polished object containing silicon oxide using a surface treatment composition, wherein the surface treatment composition comprises a zeta potential adjusting agent having an sp value greater than 9 and less than or equal to 11 and having a negatively charged functional group, and a dispersion medium, and the surface treatment method comprises controlling the zeta potential of the silicon oxide to a negative value and controlling the zeta potential of the inorganic oxide abrasive particles to -30mV or less using the surface treatment composition.

[0012] Another aspect of the present invention for solving the above problems relates to a surface treatment composition used to reduce residue containing inorganic oxide abrasive particles on the surface of a polished object containing silicon oxide, comprising a zeta potential adjusting agent having a sp value greater than 9 and less than or equal to 11 and a negatively charged functional group, and a dispersion medium, wherein the surface treatment composition has the function of negatively controlling the zeta potential of the silicon oxide and controlling the zeta potential of the inorganic oxide abrasive particles to -30mV or less. [Effects of the Invention]

[0013] The present invention provides a means for thoroughly removing residue containing inorganic oxide abrasive particles present on the surface of a polished object. [Modes for carrying out the invention]

[0014] The embodiments of the present invention will be described below, but the present invention is not limited to these embodiments. Unless otherwise specified in this specification, operations and measurements of physical properties, etc., will be performed under conditions of room temperature (20°C to 25°C) and relative humidity of 40%RH to 50%RH. In this specification, "inorganic oxide abrasive grains" contained in the polishing composition may also be simply referred to as "abrasive grains". Furthermore, the object to be polished after polishing may also be simply referred to as the "polished object".

[0015] As described above, the present invention relates to a surface treatment method for reducing residue containing inorganic oxide abrasive particles on the surface of a polished object containing silicon oxide using a surface treatment composition, wherein the surface treatment composition comprises a zeta potential adjusting agent having an sp value greater than 9 and less than or equal to 11 and having a negatively charged functional group, and a dispersion medium, and the surface treatment composition controls the zeta potential of the silicon oxide to a negative value and controls the zeta potential of the inorganic oxide abrasive particles to -30mV or less.

[0016] The method for controlling the zeta potential of silicon dioxide to a negative value and controlling the zeta potential of inorganic oxide abrasive grains to -30mV or less using a surface treatment composition is not particularly limited, but it is preferable to use a surface treatment composition comprising a zeta potential adjusting agent having a negatively charged functional group with an sp value greater than 9 and less than or equal to 11, and a dispersion medium, and bringing the surface of a polished object into contact with the surface of the polished object.

[0017] The present invention provides a means for thoroughly removing residue containing inorganic oxide abrasive particles present on the surface of a polished object.

[0018] Furthermore, according to another embodiment of the present invention, a surface treatment method is provided which includes treating the surface of a polished object containing silicon dioxide with a surface treatment composition comprising a zeta potential adjusting agent having a functional group having an sp value greater than 9 and less than or equal to 11 and being negatively charged, and a dispersion medium.

[0019] In this specification, surface treatment refers to a treatment for removing residues on the surface of a polished object to be polished, and represents a treatment for performing cleaning in a broad sense. The surface treatment method according to one embodiment of the present invention is performed by a method of directly contacting a surface treatment composition with a polished object to be polished. The surface treatment is not particularly limited, but is preferably performed, for example, by a rinse polishing treatment or a cleaning treatment.

[0020] The surface treatment method according to one embodiment of the present invention is preferably a method by a rinse polishing treatment. The reason for this is that in the polishing treatment, the treatment can be performed under pressure, physically removing the residues on the substrate surface and more strongly adsorbing the zeta potential adjuster to the substrate or the residues, so that it is possible to more efficiently reduce the residues containing inorganic oxide abrasive grains. Further, in the surface treatment method of the present invention, from the viewpoint of more efficiently reducing the residues containing inorganic oxide abrasive grains, it is preferable to perform washing with water (post-washing treatment described later) after the surface treatment of the polished object to be polished.

[0021] The surface treatment (rinse polishing treatment and cleaning treatment) and the post-washing treatment will be described later.

[0022] According to another embodiment of the present invention, there is provided a surface treatment composition used for reducing residues containing inorganic oxide abrasive grains on the surface of a polished object containing silicon oxide, the surface treatment composition including a zeta potential adjuster having an sp value exceeding 9 and being 11 or less and having a negatively charged functional group, and a dispersion medium, and having a function of controlling the zeta potential of the silicon oxide to be negative and controlling the zeta potential of the inorganic oxide abrasive grains to be -30 mV or less.

[0023] Also, as described above, the surface treatment composition according to the present invention is preferably used in a rinse polishing treatment or a cleaning treatment. Therefore, the surface treatment composition according to the present invention can be a composition for rinse polishing or a composition for cleaning.

[0024] The surface treatment method of the present invention is characterized by the relationship between the surface treatment composition and the polished object to be polished using the surface treatment composition (i.e., the object to be surface treated). Specifically, the surface treatment method of the present invention has found that the relationship between the surface treatment composition, the components contained in the polished object to be polished, and the components contained in the polishing composition used to polish the polished object to be polished (more specifically, the components of the polishing composition that adhere to the surface of the polished object as residue: abrasive particles) affects the reduction of residue on the surface of the polished object to be polished. This is because, as will be described later, the surface treatment method of the present invention is thought to exert its effects based on the charge (zeta potential) of the surface of the polished object to be polished and the charge (zeta potential) of the components (abrasive particles) of the polishing composition that exist as residue on the surface of the polished object to be polished.

[0025] Below, we will first explain the residue present on the surface of a polished object and the polished object itself, which is the object to be surface-treated.

[0026] [Residue] In this specification, "residue" refers to foreign matter adhering to the surface of a polished object. Examples of residue are not particularly limited, but include, for example, particulate abrasive residue derived from abrasive grains contained in the polishing composition, organic residue described later, and other foreign matter.

[0027] In this specification, "organic residue" refers to foreign matter adhering to the surface of a polished object, consisting of organic substances such as low-molecular-weight organic compounds and high-molecular-weight organic compounds, as well as organic salts and the like.

[0028] Organic residues adhering to polished objects include, for example, pad debris (e.g., polyurethane) generated from pads used in the polishing or surface treatment described later, or components derived from additives contained in the polishing composition used in the polishing process or the surface treatment composition used in the surface treatment. In the present invention, since the number of polyurethane residues is calculated as organic residue in the examples described later, hereafter, "organic residue" refers to organic residues containing polyurethane.

[0029] The total residue count refers to the total number of all residues, regardless of type. The total residue count can be measured using wafer defect inspection equipment (for example, the Surfscan® SP5 optical inspection machine manufactured by KLA-Tencor Co., Ltd.). Details of the measurement method for the total residue count are described in the examples below.

[0030] Since abrasive residues, organic residues, and other foreign matter differ significantly in color and shape, it is possible to determine whether a foreign matter is abrasive residue, organic residue (e.g., polyurethane residue), or other foreign matter by SEM observation. Furthermore, the determination of whether a foreign matter is abrasive residue, organic residue, or other foreign matter, as well as the type of abrasive residue and the type of organic residue, may be made by elemental analysis using an energy-dispersive X-ray analyzer (EDX), if necessary. Details of the measurement methods for the number of abrasive residues and polyurethane residues are described in the examples below.

[0031] The surface treatment method of the present invention allows for the control of the zeta potential of the residue on the surface of a polished object using a surface treatment composition. Specifically, according to the surface treatment method of the present invention, the zeta potential of inorganic oxide abrasive particles (preferably cerium oxide abrasive particles) contained in the residue is controlled to -30 mV or less. Hereinafter, inorganic oxide abrasive particles refer to inorganic oxides used as abrasive particles in the polishing composition. Therefore, when the residue contains inorganic oxide abrasive particles, these inorganic oxide abrasive particles become abrasive residue.

[0032] From the viewpoint of the effects of the present invention, preferred examples of inorganic oxide abrasive grains contained in the residue are not particularly limited, but include cerium oxide abrasive grains, anion-modified silicon oxide abrasive grains, etc., which are preferred abrasive grains in the polishing composition described later. Therefore, according to the surface treatment method of a preferred embodiment of the present invention, the inorganic oxide abrasive grains include at least one of cerium oxide abrasive grains and anion-modified silicon oxide abrasive grains, and the zeta potential of at least one of the cerium oxide abrasive grains and anion-modified silicon oxide abrasive grains is controlled to -30mV or less by the surface treatment composition. Furthermore, according to the surface treatment method of a more preferred embodiment of the present invention, the inorganic oxide abrasive grains include cerium oxide abrasive grains, and the zeta potential of the cerium oxide abrasive grains is controlled to -30mV or less by the surface treatment composition. If the zeta potential of the inorganic oxide abrasive grains contained in the residue exceeds -30mV, the residue may aggregate and form coarse particles, which may not be removable by surface treatment.

[0033] Furthermore, in a preferred embodiment of the present invention, the zeta potential of the polyurethane contained in the residue is controlled to -10mV or less. That is, according to a surface treatment method according to a preferred embodiment of the present invention, the residue further contains polyurethane, and the surface treatment composition further controls the zeta potential of the polyurethane to -30mV or less. If the zeta potential of the polyurethane contained in the residue exceeds -30mV, the residue may aggregate and form coarse particles that cannot be removed by surface treatment.

[0034] The zeta potential of the inorganic oxide abrasive grains contained in the residue (preferably at least one of cerium oxide abrasive grains and anion-modified silicon oxide abrasive grains, more preferably cerium oxide abrasive grains) is preferably -65mV or higher, more preferably -60mV or higher, even more preferably -55mV or higher, and particularly preferably -50mV or higher. Furthermore, the zeta potential of the inorganic oxide abrasive grains contained in the residue (preferably at least one of cerium oxide abrasive grains and anion-modified silicon oxide abrasive grains, more preferably cerium oxide abrasive grains) is preferably -31mV or lower, more preferably -32mV or lower, even more preferably -34mV or lower, and particularly preferably -35mV or lower. In the surface treatment method, the effects of the present invention are further enhanced by controlling the zeta potential of the inorganic oxide abrasive grains to a value within the above range. Furthermore, the effects of the present invention are further enhanced by the surface treatment composition having the function of controlling the zeta potential of the inorganic oxide abrasive grains to a value within the above range.

[0035] Furthermore, the zeta potential of the polyurethane contained in the residue is preferably -75mV or higher, more preferably -70mV or higher, even more preferably -69mV or higher, and particularly preferably -65mV or higher. Also, the zeta potential of the polyurethane contained in the residue is preferably -30mV or lower, more preferably -33mV or lower, even more preferably -35mV or lower, and particularly preferably -40mV or lower. In the surface treatment method, the effects of the present invention are further enhanced by controlling the zeta potential of the polyurethane to a value within the above range. Furthermore, the effects of the present invention are further enhanced by the surface treatment composition having the function of controlling the zeta potential of the polyurethane to a value within the above range.

[0036] In this specification, the zeta potential of inorganic oxide abrasive grains contained in the residue can be measured using a Zetasizer Nano ZSP manufactured by Spectris Corporation (Malvern Division). The zeta potential of polyurethane contained in the residue can be measured using a solid zeta potential measuring instrument SurPASS3 manufactured by Anton Paar Japan Co., Ltd. Details of the measurement methods are described in the examples.

[0037] The zeta potential of the residue can be controlled, for example, by the type and amount of the zeta potential modifier and the pH of the surface treatment composition. By increasing the negative charge of the zeta potential modifier in its presence in the surface treatment composition, the zeta potential of inorganic oxide abrasive grains and polyurethane can be reduced. For example, an anionic surfactant can be selected as the zeta potential modifier, or a group possessed by the anionic surfactant can be selected. Among these, selecting a specific group, as described later, can further reduce the zeta potential of inorganic oxide abrasive grains and polyurethane. Furthermore, by moderately lowering the pH to a range that is not too low, the zeta potential of inorganic oxide abrasive grains and polyurethane can be further reduced. In addition, by increasing the amount of zeta potential modifier in the surface treatment composition, the zeta potential reduction effect of the zeta potential modifier can be further enhanced.

[0038] [Polished objects] In this specification, "polished object" refers to an object that has been polished in a polishing process. The polishing process is not particularly limited, but a CMP process is preferred.

[0039] A surface treatment composition according to one embodiment of the present invention is used to reduce residue remaining on the surface of a polished object containing silicon dioxide. Examples of polished objects containing silicon dioxide include TEOS-type silicon dioxide surfaces (hereinafter also simply referred to as "TEOS") produced using tetraethyl orthosilicate as a precursor, HDP films, USG films, PSG films, BPSG films, RTO films, and the like.

[0040] The polished object to be polished is preferably a polished semiconductor substrate, and more preferably a semiconductor substrate after CMP (Chemical Polishing). This is because residue can cause damage to semiconductor devices, and therefore, when the polished object to be polished is a polished semiconductor substrate, the cleaning process for the semiconductor substrate must be able to remove as much residue as possible.

[0041] There are no particular limitations on polished objects containing silicon dioxide, but examples include polished objects consisting solely of silicon dioxide, and polished objects in which materials other than silicon dioxide are exposed on the surface. An example of the former is a silicon dioxide substrate, which is a semiconductor substrate. Examples of the latter include materials other than silicon dioxide, such as silicon nitride, polysilicon, and tungsten. Specific examples of such polished objects include polished semiconductor substrates having a structure in which a silicon dioxide film is formed on silicon nitride, polysilicon, or tungsten, and polished semiconductor substrates having a structure in which the silicon nitride, polysilicon, or tungsten portion and the silicon dioxide film are all exposed.

[0042] The surface treatment method of the present invention allows for the control of the zeta potential of silicon dioxide contained in a polished object using a surface treatment composition. Specifically, according to the surface treatment method of the present invention, the zeta potential of silicon dioxide is controlled to be negative.

[0043] The zeta potential of silicon dioxide contained in the polished workpiece is preferably -55mV to -1mV, more preferably -50mV to -2mV, even more preferably -49mV to -10mV, even more preferably -45mV to -20mV, and most preferably -42mV to -30mV. The initial effects of the present invention are more fully realized when the zeta potential of silicon dioxide is within the above range.

[0044] The zeta potential of silicon dioxide can be controlled, for example, by the type and amount of the zeta potential modifier and the pH of the surface treatment composition. By increasing the negative charge of the zeta potential modifier in its presence within the surface treatment composition, the zeta potential of silicon dioxide contained in the polished object can be reduced. For example, by selecting an anionic surfactant as the zeta potential modifier, or by selecting a group possessed by the anionic surfactant, or even a specific group as described later, the zeta potential of silicon dioxide contained in the polished object can be further reduced. Furthermore, by moderately lowering the pH to a range that is not too low, the zeta potential of silicon dioxide contained in the polished object can be further reduced. In addition, by increasing the amount of the zeta potential modifier in the surface treatment composition, the zeta potential reduction effect of the zeta potential modifier can be further enhanced.

[0045] In the surface treatment method of the present invention, silicon nitride may be included as a material other than silicon oxide. When silicon nitride is included as inorganic oxide abrasive grains in the residue, for example, the zeta potential of silicon nitride can be controlled to be negative at a pH of less than 4. In this case, the zeta potential of silicon nitride contained in the polished workpiece is preferably -65mV or more and -1mV or less, more preferably -62mV or more and -2mV or less, even more preferably -60mV or more and -10mV or less, even more preferably -58mV or more and -15mV or less, even more preferably -55mV or more and -30mV or less, and most preferably -52mV or more and -35mV or less.

[0046] Next, a description will be given of the surface treatment composition used in the surface treatment method of the present invention.

[0047] [Surface treatment composition] One embodiment of the present invention is a surface treatment composition used to treat the surface of a polished object, comprising a zeta potential adjusting agent having an sp value greater than 9 and less than or equal to 11 and having a negatively charged functional group, and a dispersion medium. Here, some components of the polishing composition tend to adhere to the surface of the polished object and remain on the surface of the polished object after the polishing process. In particular, inorganic oxide abrasive particles contained in the polishing composition tend to remain on the surface of the polished object. In this case, the inorganic oxide abrasive particles remaining on the surface of the polished object may cause foreign matter. The surface treatment composition according to the present invention can remove such residues (i.e., inorganic oxide abrasive particles) derived from the polishing composition that remain on the surface of the polished object.

[0048] The surface treatment composition according to the present invention can control the zeta potential of silicon oxide contained in a polished object to a negative value, and control the zeta potential of inorganic oxide abrasive particles present as residue on the surface of the polished object to -30mV or less. In other words, when a polished object comes into contact with the surface treatment composition according to the present invention, the zeta potentials of silicon oxide and inorganic oxide abrasive particles on the surface of the polished object are controlled to the above range. As a result, the surface treatment composition according to the present invention can be used as a residue reducing agent to efficiently remove residue (inorganic oxide abrasive particles) in the surface treatment process.

[0049] Therefore, according to the present invention, a surface treatment composition is also provided for use in reducing residue containing inorganic oxide abrasive particles on the surface of a polished object containing silicon oxide, comprising a zeta potential adjusting agent having an sp value greater than 9 and less than or equal to 11 and a negatively charged functional group, and a dispersion medium, wherein the surface treatment composition has the function of controlling the zeta potential of silicon oxide to a negative value and controlling the zeta potential of the inorganic oxide abrasive particles to -30mV or less.

[0050] Furthermore, in the above surface treatment composition, the inorganic oxide abrasive grains include cerium oxide abrasive grains, and the surface treatment composition has the function of controlling the zeta potential of the cerium oxide abrasive grains to -30mV or less.

[0051] Furthermore, the surface treatment composition according to the present invention can efficiently remove pad debris (polyurethane) generated from pads used in polishing or surface treatment. That is, although this pad debris also exists as residue on the surface of the polished object, the surface treatment composition according to the present invention can efficiently remove it by controlling the zeta potential of the polyurethane on the surface of the polished object, when the pad debris is polyurethane. Therefore, the surface treatment composition according to the present invention further contains polyurethane as the residue, and the surface treatment composition further has the function of controlling the zeta potential of the polyurethane to -30mV or less.

[0052] The inventors of this invention hypothesize the following mechanism by which the above problems are solved.

[0053] The zeta potential adjusting agent contained in the surface treatment composition has an sp value greater than 9 and less than or equal to 11, and has negatively charged functional groups. Therefore, it adheres to the surface of the residue (inorganic oxide abrasive grains, polyurethane) present on the surface of the polished workpiece, forming a hydrophilic layer. The zeta potential adjusting agent also adheres to the surface of the polished workpiece within the surface treatment composition, forming a hydrophilic layer there as well. The residue on which the hydrophilic layer has formed has an affinity for the hydrophilized surface of the polished workpiece, and therefore maintains its adherence to the polished workpiece without moving away from the surface during the surface treatment process (for example, moving towards the polishing pad). Subsequently, the hydrophilic layer on the surface of the polished workpiece is easily removed by washing with water (post-washing treatment described later), and the residue on the surface of the polished workpiece is also removed.

[0054] Therefore, the surface treatment composition according to the present invention has the function of removing or facilitating the removal of residue from the polished surface of the polished object through the chemical interaction between each component contained in the surface treatment composition and the polished surface of the polished object and the residue from the polished surface of the polished object.

[0055] It should be noted that the above mechanism is based on speculation, and its accuracy does not affect the technical scope of the present invention.

[0056] The following describes each component included in the surface treatment composition.

[0057] [Zeta potential regulator] A surface treatment composition according to one embodiment of the present invention comprises a zeta potential modifier having an sp value greater than 9 and less than or equal to 11, and having a negatively charged functional group. Here, the sp value is a solubility parameter, and the sp value of the zeta potential modifier in this specification is a value calculated by the Fedors method (Reference: RFFedors, Polym.Eng.Sci., 14[2]147(1974)).

[0058] The sp value of the zeta potential adjusting agent is greater than 9 and less than or equal to 11, preferably greater than 9 and less than or equal to 10.9, and more preferably between 9.5 and 10.8. When the sp value is greater than 9 and less than or equal to 11, the affinity between the zeta potential adjusting agent and the residue on the polished surface of the workpiece increases, making it easier for the zeta potential adjusting agent to adhere to the residue. When the sp value of the zeta potential adjusting agent is 9 or less, it deviates significantly from the sp value of water (23), making it difficult for the zeta potential adjusting agent to dissolve in the dispersion medium (e.g., water), and the zeta potential adjusting agent itself is more likely to become a residue on the surface. When the sp value of the zeta potential adjusting agent exceeds 11, it approaches the sp value of water (23), and therefore the zeta potential adjusting agent becomes more stable in the surrounding dispersion medium (e.g., water) than in adsorbing to the polished surface of the workpiece or the residue, and the effects of the present invention are not exhibited.

[0059] Zeta potential adjusting agents have negatively charged functional groups. Examples of such functional groups include at least one selected from the group consisting of sulfonic acid (salt) groups, sulfuric acid (salt) groups, phosphonic acid (salt) groups, and phosphoric acid (salt) groups. When the negatively charged functional group is one of these groups, the effect of removing residue containing inorganic oxide abrasive particles present on the surface of polished objects containing silicon oxide is further improved. This is presumed to be because by making the surface charges of the polished object and the residue the same negative charge, charge repulsion is made effective, enabling the detachment of the residue and preventing its re-adhesion.

[0060] The zeta potential adjusting agent is preferably an anionic surfactant, and more preferably an anionic surfactant with a weight-average molecular weight of less than 1,000. Anionic surfactants readily form a hydrophilic layer on the residue, and the formed hydrophilic layer can be easily removed by washing with water (post-washing treatment described later), thus contributing to the removal of residue by the surface treatment composition. Therefore, a surface treatment composition containing an anionic surfactant can sufficiently remove residue remaining on the surface of a polished object during surface treatment of a polished object.

[0061] The weight-average molecular weight of the anionic surfactant is preferably less than 1,000, more preferably 200 or more and less than 1,000, even more preferably 500 or more and 980 or less, and still more preferably 800 or more and 959 or less. By having the weight-average molecular weight of the anionic surfactant within the above range, the affinity to the residue can be improved, and the intended effects of the present invention can be further exhibited. The weight-average molecular weight of the anionic surfactant can be calculated from its molecular formula or measured as a value converted to polyethylene glycol using gel permeation chromatography (GPC).

[0062] Examples of such anionic surfactants include compounds containing at least one functional group selected from the group consisting of sulfonic acid (salt) groups, sulfate (salt) groups, phosphonic acid (salt) groups, and phosphoric acid (salt) groups. Of these, sulfate (salt) groups, phosphonic acid (salt) groups, and phosphoric acid (salt) groups are preferred as functional groups, and sulfate (salt) groups and phosphoric acid (salt) groups are more preferred.

[0063] In this specification, "acid (salt)" means that the group or compound of interest may be in the form of an acid or a salt. Here, a sulfonic acid group is a sulfo group, a sulfate group is a group represented by -OSO3H, a phosphonic acid group is a phospho group, and a phosphate group is a group represented by -OPO3H2. Note that the phosphonic acid base and phosphate base may be acidic bases with one H remaining. These groups may also be in the form of a salt, and there are no particular limitations on the salt, but examples include alkali metal salts such as lithium salts, sodium salts, and potassium salts, salts of group 2 elements such as calcium salts, amine salts, and ammonium salts. Among these, alkali metal salts are preferred, and sodium salts are more preferred. The type of salt may be a single type or a combination of two or more types.

[0064] The types of anionic surfactants used in the present invention will now be described. The anionic surfactants described below may be low molecular weight surfactants or high molecular weight surfactants, but low molecular weight surfactants are preferred in order to further enhance the effects of the present invention. In this specification, "low molecular weight surfactant" refers to a compound whose molecular weight is less than 1000. The molecular weight of such a compound can be determined, for example, using known mass spectrometry methods such as TOF-MS or LC-MS. On the other hand, in this specification, "high molecular weight surfactant" refers to a compound whose molecular weight (weight-average molecular weight) is 1000 or more. The weight-average molecular weight can be measured by gel permeation chromatography (GPC).

[0065] (Compounds containing a sulfonic acid (salt) group) The compound having a sulfonic acid (salt) group as an anionic surfactant according to the present invention is not particularly limited as long as it is a surfactant having a sulfonic acid (salt) group.

[0066] Examples of compounds having a sulfonic acid (salt) group include sulfonic acids or their salts, such as alkylbenzenesulfonic acid (e.g., n-dodecylbenzenesulfonic acid), alkylsulfonic acid (e.g., laurylsulfonic acid), alkyldiphenyletherdisulfonic acid (e.g., lauryldiphenyletherdisulfonic acid), and alkylnaphthalenesulfonic acid (e.g., laurylnaphthalenesulfonic acid). Examples of salts of these sulfonic acids include alkali metal salts such as sodium salts, salts of group 2 elements such as calcium salts, amine salts, and ammonium salts. In particular, when the polished object is a semiconductor substrate after the CMP process, sodium salts, amine salts, or ammonium salts are preferred from the viewpoint of removing as much metal as possible from the substrate surface. For example, ammonium laurylsulfonate and sodium lauryldiphenyletherdisulfonate are preferred as anionic surfactants having a sulfonic acid (salt) group.

[0067] Examples of the above commercially available products include sulfonic acid group-containing modified polyvinyl alcohol (manufactured by Nippon Synthetic Chemical Industry Co., Ltd., Gosenex L series), sulfonic acid group-containing copolymer (manufactured by Toagosei Co., Ltd., Aron® A series), and sulfonic acid group-containing copolymer (Akzo Products such as the VERSA (registered trademark, same hereinafter) series and NARLEX (registered trademark, same hereinafter) series from Nobel Co., Ltd., the ST series and MA series from Tosoh Finechem Co., Ltd., polystyrene sulfonic acid (salt) (Polinas (registered trademark, same hereinafter) series from Tosoh Finechem Co., Ltd.), alkyl diphenyl ether disulfonate (Pionin (registered trademark, same hereinafter) A-43-D, A-43-S; Takesurf A-43-NQ from Takemoto Oil Co., Ltd.) can be used.

[0068] (Compounds containing a sulfate (salt) group) The compound having a sulfate (salt) group as an anionic surfactant according to the present invention is not particularly limited as long as it is a surfactant containing a sulfate (salt) group.

[0069] Examples of compounds having a sulfate (salt) group include alkyl sulfate salts (e.g., ammonium lauryl sulfate), polyoxyalkylene alkyl ether sulfate salts, polyoxyalkylene allyl ether sulfate salts, polyoxyalkylene allylphenyl ether sulfate salts (e.g., polyoxyethylene allylphenyl ether sulfate salts), polyoxyalkylene alkylallylphenyl ether sulfate salts (e.g., polyoxyethylene alkylallylphenyl ether sulfate salts), polyoxyalkylene phenyl ether sulfate salts (e.g., polyoxyethylene phenyl ether sulfate salts), and polyoxyalkylene polycyclic phenyl ether sulfate salts. These compounds can be used individually or in combination of two or more. Examples of salts are the same as those described above under (compounds having a sulfonic acid (salt) group). For example, ammonium lauryl sulfate and polyoxyethylene allylphenyl ether sulfate ammonium are preferred as anionic surfactants having a sulfate (salt) group.

[0070] Anionic surfactants having a sulfate (salt) group may be commercially available or synthetically produced. Examples of the above-mentioned commercially available products include polyoxyalkylene allyl phenyl ether sulfate (salt) (manufactured by Takemoto Oil & Fat Co., Ltd., Newcalgen (registered trademark, hereinafter the same) FS-7S), polyoxyethylene allyl phenyl ether sulfate (manufactured by Daiichi Kogyo Seiyaku Co., Ltd., Hytenol (registered trademark, hereinafter the same) NF08), polyoxyethylene alkyl allyl phenyl ether sulfate (manufactured by Daiichi Kogyo Seiyaku Co., Ltd., Aqualon (registered trademark, hereinafter the same) HS-10), polyoxyethylene alkyl ether sulfate (manufactured by Nippon Emulsifier Co., Ltd., Newcol (registered trademark, hereinafter the same) 1020-SN), polyoxyethylene polycyclic phenyl ether sulfate (manufactured by Nippon Emulsifier Co., Ltd., Newcol 707 series), and polyoxyethylene allyl ether sulfate (manufactured by Nippon Emulsifier Co., Ltd., Newcol B4-SN).

[0071] (Compounds containing a phosphonic acid (salt) group) The compound having a phosphonic acid (salt) group as an anionic surfactant according to the present invention is not particularly limited as long as it is a surfactant having a phosphonic acid (salt) group.

[0072] As compounds having a phosphonic acid (salt) group, known compounds such as dodecylphosphonic acid can be used. These compounds can be used individually or in combination of two or more. Examples of salts are the same as those described above under (compounds having a sulfonic acid (salt) group).

[0073] (Compounds containing a phosphate (salt) group) The compound having a phosphate (salt) group as an anionic surfactant according to the present invention is not particularly limited as long as it is a surfactant containing a phosphate (salt) group.

[0074] Examples of compounds having a phosphate (salt) group include monoalkyl phosphate, alkyl ether phosphate, polyoxyethylene alkyl ether phosphate, polyoxyethylene allylphenyl ether phosphate, and polyoxyethylene alkylphenyl ether phosphate. These compounds can be used individually or in combination of two or more. Examples of salts are the same as those described above under (compounds having a sulfonic acid (salt) group).

[0075] Compounds having a phosphate (salt) group may be commercially available or synthetically produced. Examples of such commercially available products include polyoxyethylene alkyl ether phosphate (manufactured by Nikko Chemicals Co., Ltd., NIKKOL (registered trademark, hereinafter the same) DLP, DOP, DDP, TLP, TCP, TOP, and TDP series) and polyoxyethylene allylphenyl ether phosphate (manufactured by Takemoto Oil & Fat Co., Ltd., phosphate ester (phosphate) type series (Newcalgen FS-3AQ, Newcalgen FS-3PG, etc.)).

[0076] If the anionic surfactant has an alkyl group, it is preferable that the alkyl group is a linear or branched alkyl group having 6 to 20 carbon atoms. Furthermore, the anionic surfactant is preferably a structure in which ethylene oxide is added, and the number of moles of ethylene oxide added is preferably 2 to 18, more preferably 3 to 15, and even more preferably 3 to 12.

[0077] The zeta potential modifier may be a commercially available product or a synthetic product. The manufacturing method for synthesis is not particularly limited and can be obtained by known synthesis methods.

[0078] Zeta potential modifiers can be used alone or in combination of two or more types.

[0079] The content (concentration) of the zeta potential adjusting agent (total amount if there are two or more types) is not particularly limited, but is preferably 0.001 g / kg or more, more preferably 0.01 g / kg or more, even more preferably 0.03 g / kg or more, particularly preferably 0.05 g / kg or more, and most preferably 0.08 g / kg or more, relative to the total mass of the surface treatment composition. When the content of the zeta potential adjusting agent is 0.001 g / kg or more, the effects of the present invention are further improved. Furthermore, the upper limit of the content of the zeta potential adjusting agent is not particularly limited, but is preferably 10 g / kg or less, more preferably 5 g / kg or less, even more preferably 1 g / kg or less, particularly preferably 0.5 g / kg or less, and most preferably 0.3 g / kg or less, relative to the total mass of the surface treatment composition. When the content of the zeta potential adjusting agent is 10 g / kg or less, the removal of the zeta potential adjusting agent itself after surface treatment becomes easier.

[0080] [Dispersion medium] The surface treatment composition according to the present invention contains a dispersion medium (solvent) for dissolving or dispersing each component. The dispersion medium preferably contains water, and more preferably contains only water. Alternatively, the dispersion medium may be a mixed solvent of water and an organic solvent for the dispersion or dissolution of each component. Examples of organic solvents include alcohols such as methanol, ethanol, isopropanol, ethylene glycol, propylene glycol, and glycerin; ketones such as acetone; and acetonitrile. Therefore, examples of dispersion mediums include water; alcohols such as methanol, ethanol, isopropanol, ethylene glycol, propylene glycol, and glycerin; ketones such as acetone; acetonitrile; and mixtures thereof. Of these, water is preferred as the dispersion medium. Alternatively, these organic solvents may be used without mixing with water to disperse or dissolve each component, and then mixed with water. These organic solvents can be used individually or in combination of two or more. When a dispersion medium other than water is included, the water content relative to the total mass of the dispersion medium is preferably 90% by mass or more and 100% by mass or less, and more preferably 99% by mass or more and 100% by mass or less. However, it is most preferable that the dispersion medium be water only.

[0081] From the viewpoint of not inhibiting the action of the components contained in the surface treatment composition, water containing as few impurities as possible is preferred as the dispersion medium. For example, water with a total transition metal ion content of 100 ppb or less is preferred. Here, the purity of the water can be increased by operations such as removing impurity ions using an ion exchange resin, removing foreign matter by filtration, or distillation. Specifically, deionized water, pure water, ultrapure water, or distilled water obtained by removing impurity ions with an ion exchange resin and then removing foreign matter by filtration is more preferred.

[0082] [pH and pH adjusters] The pH of the surface treatment composition according to the present invention is preferably 2 or more and less than 5. When the pH of the surface treatment composition is within the above range, the zeta potential of cerium oxide is positively charged and electrically attracts the zeta potential adjusting agent, so as a result it is possible to negatively charge the abrasive residue (e.g., cerium oxide). This allows the intended effects of the present invention to be more fully realized. The pH of the surface treatment composition according to the present invention may be 2 or more, but preferably 2.5 or more, and more preferably 3 or more. The pH of the surface treatment composition according to the present invention may be 5 or less, but preferably less than 4.5, more preferably 4 or less, and even more preferably 4.5 or less.

[0083] The pH of the surface treatment composition can be measured using, for example, a pH meter (e.g., LAQUA, manufactured by Horiba, Ltd.).

[0084] The surface treatment composition according to the present invention comprises a zeta potential adjusting agent and a dispersion medium as essential components. However, if it is difficult to obtain the desired pH using only these components, a pH adjusting agent (a pH adjusting agent which is a different compound from the zeta potential adjusting agent described above) may be added to adjust the pH, within a range that does not impede the effects of the present invention. In one embodiment, the surface treatment composition according to the present invention further comprises a pH adjusting agent.

[0085] A known acid, base, or salt thereof can be used as the pH adjuster.

[0086] Specific examples of acids that can be used as pH adjusters include inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid, as well as organic acids such as formic acid, acetic acid, propionic acid, butyric acid, pentanoic acid, 2-methylbutyric acid, hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, heptanoic acid, 2-methylhexanoic acid, octanoic acid, 2-ethylhexanoic acid, benzoic acid, hydroxyacetic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citric acid, lactic acid, diglycolic acid, 2-furanic acid, 2,5-franic acid, 3-furanic acid, 2-tetrahydrofuranic acid, methoxyacetic acid, methoxyphenylacetic acid, 2-hydroxyisobutyric acid, and phenoxyacetic acid. When inorganic acids are used as pH adjusters, sulfuric acid, nitric acid, phosphorous acid, and phosphoric acid are particularly preferred. When organic acids are used as pH adjusters, acetic acid, lactic acid, benzoic acid, hydroxyacetic acid, maleic acid, citric acid, tartaric acid, and hydroxyisobutyric acid are preferred, with maleic acid, citric acid, and tartaric acid being more preferred.

[0087] Examples of bases that can be used as pH adjusters include amines such as aliphatic amines and aromatic amines, ammonium solutions, organic bases such as quaternary ammonium hydroxide, alkali metal hydroxides such as potassium hydroxide, hydroxides of group 2 elements, amino acids such as histidine, and ammonia.

[0088] The surface treatment composition preferably contains an acid, more preferably an inorganic acid, even more preferably at least one selected from the group consisting of sulfuric acid, nitric acid, phosphorous acid, and phosphoric acid, and particularly preferably nitric acid.

[0089] The pH adjuster may be a commercially available product or a synthetic product. The pH adjuster may be used alone or in combination of two or more types. The amount of pH adjuster added is not particularly limited and should be adjusted as appropriate so that the surface treatment composition reaches the desired pH.

[0090] [Other additives] A surface treatment composition according to one embodiment of the present invention may contain other additives in any proportion as needed, as long as they do not hinder the effects of the present invention. However, it is desirable to avoid adding components other than the essential components of the surface treatment composition according to one embodiment of the present invention as much as possible, as they may cause foreign matter. Therefore, it is preferable that the amount of components other than the essential components added be as small as possible, and more preferably that they are not included at all. Examples of other additives include abrasive grains, alkalis, polymer compounds, antifungal agents (preservatives), dissolved gases, reducing agents, oxidizing agents, and alkanolamines. In particular, in order to further improve the foreign matter removal effect, it is preferable that the surface treatment composition substantially does not contain abrasive grains. Here, "substantially does not contain abrasive grains" means that the content of abrasive grains in the entire surface treatment composition is 0.01% by mass or less (lower limit 0% by mass), preferably 0.005% by mass or less (lower limit 0% by mass), and more preferably 0.001% by mass or less (lower limit 0% by mass).

[0091] (polymer compound) A surface treatment composition according to one embodiment of the present invention may contain a polymer compound. Preferably, the polymer compound is a polymer compound having an anionic group and having a weight-average molecular weight of 1,000 or more. Preferably, the polymer compound is a polymer having an acid (salt) group and having a weight-average molecular weight of 1,000 or more. More preferably, the polymer compound is a polymer compound having at least one functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphonic acid (salt) group, and a phosphoric acid (salt) group, and having a weight-average molecular weight of 1,000 or more.

[0092] Polymer compounds can be used individually or in combination of two or more. Furthermore, commercially available polymer compounds or synthesized polymer compounds may be used.

[0093] When the surface treatment composition contains a polymer compound, the lower limit of the polymer compound content is preferably 0.01% by mass or more, more preferably 0.03% by mass or more, and even more preferably 0.05% by mass or more, based on 100% by mass of the total mass of the surface treatment composition. Furthermore, the upper limit of the polymer compound content in the surface treatment composition is preferably 5% by mass or less, more preferably 1% by mass or less, and even more preferably 0.5% by mass or less, based on 100% by mass of the total mass of the surface treatment composition. Note that when the surface treatment composition contains two or more polymer compounds, the polymer compound content refers to the total amount of these compounds.

[0094] [Anti-mold agent] The surface treatment composition according to the present invention preferably contains an antifungal agent (preservative). The antifungal agent (preservative) that can be used when the surface treatment composition according to the present invention contains an antifungal agent (preservative) is not particularly limited and can be appropriately selected depending on the type of polymer. Specifically, examples include isothiazoline-based preservatives such as 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one, and phenoxyethanol.

[0095] The above-mentioned antifungal agents (preservatives) may be used alone or in combination of two or more types.

[0096] When a surface treatment composition contains an antifungal agent (preservative), the lower limit of the antifungal agent (preservative) content (concentration) is not particularly limited, but is preferably 0.0001% by mass or more, more preferably 0.001% by mass or more, even more preferably 0.005% by mass or more, and particularly preferably 0.01% by mass or more. Similarly, the upper limit of the antifungal agent (preservative) content (concentration) is not particularly limited, but is preferably 5% by mass or less, more preferably 1% by mass or less, even more preferably 0.5% by mass or less, and particularly preferably 0.1% by mass or less. In other words, the antifungal agent (preservative) content (concentration) in the surface treatment composition is preferably 0.0001% by mass or more and 5% by mass or less, more preferably 0.001% by mass or more and 1% by mass or less, even more preferably 0.005% by mass or more and 0.5% by mass or less, and particularly preferably 0.01% by mass or more and 0.1% by mass or less. Within this range, sufficient effect can be obtained to inactivate or destroy microorganisms. Note that if the surface treatment composition contains two or more antifungal agents (preservatives), the above content refers to the total amount of these agents.

[0097] In other words, in one embodiment of the present invention, the surface treatment composition is substantially composed of at least one selected from the group consisting of a zeta potential adjuster, a pH adjuster, and water, as well as an antifungal agent, an organic solvent, and a polymer compound. In one embodiment of the present invention, the surface treatment composition is substantially composed of at least one of a zeta potential adjuster, a pH adjuster, and water, as well as an antifungal agent and an organic solvent. In one embodiment of the present invention, the surface treatment composition is substantially composed of a zeta potential adjuster, a pH adjuster, and water. In this embodiment, "the surface treatment composition is substantially composed of X" means that the total content of X exceeds 99% by mass (upper limit: 100% by mass) when the total mass of the surface treatment composition is 100% by mass (relative to the surface treatment composition). Preferably, the surface treatment composition is composed of X (total content = 100% by mass). For example, "the surface treatment composition is substantially composed of a zeta potential adjuster, a pH adjuster, and water, as well as at least one of an antifungal agent, an organic solvent, and a polymer compound" means that the total content of the zeta potential adjuster, pH adjuster, and water, as well as the antifungal agent, organic solvent, and polymer compound, exceeds 99% by mass (upper limit: 100% by mass) of the total mass of the surface treatment composition (with a total content of the above = 100% by mass). It is preferable that the surface treatment composition is composed of a zeta potential adjuster, a pH adjuster, and water, as well as at least one of an antifungal agent, an organic solvent, and a polymer compound (total content = 100% by mass).

[0098] The surface treatment composition according to the present invention can control the zeta potential of silicon oxide contained in a polished object to a negative value, and can also control the zeta potential of inorganic oxide abrasive grains adhering to the polished object to -30mV or less. The reason why such control is possible is thought to be that the zeta potential adjusting agent contained in the surface treatment composition has a high affinity for silicon oxide and inorganic oxide abrasive grains contained in the polished object, and readily adheres to the surface of silicon oxide and inorganic oxide abrasive grains. It is thought that the zeta potential adjusting agent negatively charges the silicon oxide and inorganic oxide abrasive grains, and further guides the zeta potential of the inorganic oxide abrasive grains to -30mV or less.

[0099] [Method for manufacturing surface treatment composition] The method for producing the above surface treatment composition is not particularly limited. For example, it can be produced by mixing a zeta potential adjusting agent having an sp value greater than 9 and less than or equal to 11 and having a negative functional group with a dispersion medium (e.g., water). That is, according to another embodiment of the present invention, a method for producing the above surface treatment composition is also provided, which includes mixing a zeta potential adjusting agent having an sp value greater than 9 and less than or equal to 11 and having a negative functional group with a dispersion medium. The type and amount of the zeta potential adjusting agent are as described above. Furthermore, in the method for producing the surface treatment composition according to one embodiment of the present invention, other components other than the zeta potential adjusting agent and dispersion medium may be further mixed as needed. The types and amounts of these components are as described above.

[0100] The order and method of adding each component contained in the surface treatment composition are not particularly limited. Each component may be added together or separately, or in stages or sequentially. The mixing method is also not particularly limited, and known methods can be used. Preferably, the method for producing the surface treatment composition includes sequentially adding a zeta potential adjusting agent, a dispersion medium, and other components to be added as needed, and stirring in the dispersion medium. In addition, the method for producing the surface treatment composition may further include measuring and adjusting the pH of the surface treatment composition to a desired pH.

[0101] Here, the residue on the surface of the polished object to be polished that is removed by the surface treatment composition according to the present invention is the residue that adheres to the object during the polishing process. That is, inorganic oxide abrasive particles are residues derived from the polishing composition, and pad debris (e.g., polyurethane) is residues derived from the polishing pad used in the polishing process. Therefore, the polishing composition and polishing process from which these residues originate will be described. In other words, the polished object to be polished, which is the target of surface treatment in the surface treatment method of the present invention, will be described.

[0102] [Polishing composition] The polishing composition comprises inorganic oxide abrasive particles, a dispersion medium, and, if necessary, additives. In the present invention, the composition of the polishing composition is not particularly limited, except that inorganic oxide abrasive particles and a dispersion medium are essential, but preferred compositions of polishing compositions are described below.

[0103] [Abrasive grains] Examples of abrasive particles (inorganic oxide abrasive particles) contained in polishing compositions include particles made of inorganic oxides (metal oxides) such as silicon dioxide (silica), aluminum oxide (alumina), cerium oxide (ceria), zirconium oxide (zirconia), and titanium oxide (titania). These metal oxides may be surface-modified. For example, they may be anion-modified inorganic oxides to which organic acids such as carboxylic acids and sulfonic acids are immobilized. As such anion-modified inorganic oxides, anion-modified silicon dioxide to which organic acids such as carboxylic acids and sulfonic acids are immobilized is preferred, and anion-modified colloidal silica to which organic acids such as carboxylic acids and sulfonic acids are immobilized is more preferred. The immobilization of organic acids to the surface of such inorganic oxides is carried out, for example, by chemical bonding of the functional groups of organic acids to the surface of the inorganic oxide. Immobilization of organic acids to inorganic oxides is not achieved simply by having inorganic oxides and organic acids coexist. For example, if you want to immobilize a sulfonic acid, a type of organic acid, on colloidal silica, you can use the method described in, for example, “Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”, Chem. Commun. 246-247 (2003). Specifically, by coupling a silane coupling agent having a thiol group, such as 3-mercaptopropyltrimethoxysilane, to colloidal silica and then oxidizing the thiol group with hydrogen peroxide, you can obtain anion-modified colloidal silica on which the sulfonic acid is immobilized on the surface. Alternatively, if you want to immobilize a carboxylic acid on colloidal silica, you can use, for example, “Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica”. This can be done by the method described in "Gel", Chemistry Letters, 3, 228-229 (2000). Specifically, anionically modified colloidal silica with a carboxylic acid immobilized on its surface can be obtained by coupling a silane coupling agent containing a photoreactive 2-nitrobenzyl ester to colloidal silica and then irradiating it with light. Among these, anionically modified silicon dioxide (hereinafter also referred to as sulfonic acid-modified silicon dioxide) with a sulfonic acid immobilized on its surface is preferred, and anionically modified colloidal silica (hereinafter also referred to as sulfonic acid-modified colloidal silica) with a sulfonic acid immobilized on its surface is more preferred. The organic acid immobilized on the surface of the inorganic oxide may be in the form of an acid or a salt.

[0104] From the viewpoint of removal effect by the surface treatment composition, the abrasive grains (inorganic oxide abrasive grains) are more preferably at least one of anionically modified silicon oxide abrasive grains and cerium oxide abrasive grains, even more preferably at least one of anionically modified colloidal silica abrasive grains and cerium oxide abrasive grains, and particularly preferably cerium oxide abrasive grains. Anionically modified silicon oxide abrasive grains and cerium oxide abrasive grains readily form an affinity layer when in contact with the surface treatment composition and are easily removed from the surface of the polished object by cleaning treatment after surface treatment.

[0105] Therefore, according to a preferred embodiment of the surface treatment method of the present invention, the inorganic oxide abrasive grains contained in the residue are at least one of anionically modified silicon oxide abrasive grains and cerium oxide abrasive grains, and the surface treatment composition controls the zeta potential of at least one of the anionically modified silicon oxide abrasive grains and cerium oxide abrasive grains to -30mV or less. According to a more preferred embodiment of the surface treatment method of the present invention, the inorganic oxide abrasive grains contained in the residue are cerium oxide abrasive grains, and the surface treatment composition controls the zeta potential of the cerium oxide abrasive grains to -30mV or less.

[0106] The lower limit of the average primary particle diameter of the abrasive grains is not particularly limited, but is preferably 5 nm or more, more preferably 7 nm or more, and even more preferably 10 nm or more. Within this range, it is easier to obtain the desired polishing speed. The upper limit of the average primary particle diameter of the abrasive grains is not particularly limited, but is preferably 50 nm or less, more preferably 40 nm or less, and even more preferably 30 nm or less. Within this range, the effects of the surface treatment composition according to the present invention are more fully exhibited. The value of the average primary particle diameter of the abrasive grains can be calculated based on the specific surface area of ​​the abrasive grains measured by the BET method, assuming that the particle shape of the inorganic oxide abrasive grains is perfectly spherical.

[0107] The lower limit of the average secondary particle diameter of the abrasive grains is not particularly limited, but is preferably 5 nm or more, more preferably 10 nm or more, and even more preferably 20 nm or more. Within this range, it is easier to obtain the desired polishing speed. The upper limit of the average secondary particle diameter of the abrasive grains is not particularly limited, but is preferably 100 nm or less, more preferably 90 nm or less, and even more preferably 80 nm or less. Within this range, the effects of the surface treatment composition according to the present invention are more fully exhibited. The value of the average secondary particle diameter of the abrasive grains can be calculated based on a light scattering method using laser light.

[0108] The abrasive grains may be synthetic or commercially available.

[0109] The lower limit of the abrasive content (concentration) in the polishing composition is not particularly limited, but it is preferably greater than 0.01% by mass, more preferably 0.1% by mass or more, and even more preferably 0.5% by mass or more, relative to the total mass of the polishing composition. Within this range, it is easier to obtain the desired polishing speed. The upper limit of the abrasive content (concentration) is not particularly limited, but it is preferably 10% by mass or less, more preferably 5% by mass or less, and even more preferably 3% by mass or less, relative to the total mass of the polishing composition. Within this range, the effect of the surface treatment composition is more pronounced in the abrasive particles remaining on the surface of the polished object.

[0110] [Other ingredients] The polishing composition may contain other components (additives) besides inorganic oxide abrasive grains and dispersion media. For example, components used in known polishing compositions, such as pH adjusters, surfactants, wetting agents, chelating agents, preservatives, fungicides, dissolved gases, oxidizing agents, and reducing agents, can be appropriately selected.

[0111] [Polishing process] Polishing using an abrasive composition is a process of polishing an object to be polished to form a polished object. In the polishing process, the object to be polished is polished using a polishing device.

[0112] The polishing process is not particularly limited as long as it polishes the object to be polished, but chemical mechanical polishing (CMP) is preferred. Furthermore, the polishing process may consist of a single step or multiple steps. Examples of multiple-step polishing processes include a process in which a preliminary polishing (rough polishing) step is followed by a finish polishing step, or a process in which one or more secondary polishing steps are performed after a primary polishing step, followed by a finish polishing step. Surface treatment using the surface treatment composition according to the present invention is preferably performed after the finish polishing step.

[0113] As the polishing apparatus, a general polishing apparatus can be used that has a holder for holding the object to be polished, a motor with adjustable rotation speed, and a polishing platen to which a polishing pad (abrasive cloth) can be attached. Either a single-sided polishing apparatus or a double-sided polishing apparatus may be used.

[0114] In the polishing process according to the present invention, a polishing pad can be made of any material, such as a general nonwoven fabric, polyurethane, or porous fluororesin, without any particular limitations. However, in order to further reduce residue in the surface treatment process, it is preferable that the polishing pad be made of polyurethane.

[0115] In other words, in the present invention, components derived from the polishing pad may adhere to the surface of the polished object. In this case, if the polishing pad is polyurethane, the surface treatment composition according to the present invention can control the zeta potential of the polyurethane residue adhering to the surface of the polished object to -30mV or less, thereby enabling efficient removal of the residue (polyurethane).

[0116] In the surface treatment method of the present invention, it is preferable that the Shore A hardness of the polishing pad used in the polishing process is 40° or more and 100° or less. The Shore A hardness of the polishing pad used in the polishing process is preferably 40° or more, more preferably 60° or more, even more preferably 70° or more, even more preferably 75° or more, particularly preferably 80° or more, and most preferably 85° or more. The Shore A hardness of the polishing pad used in the polishing process is preferably 100° or less, more preferably 99° or less, even more preferably 97° or less, even more preferably 95° or less, and particularly preferably 93° or less. By having the Shore A hardness of the polishing pad used in the polishing process within the above range, the polishing pad and the object to be polished come into contact with each other at an appropriate pressure, which not only allows for efficient polishing but also has the effect of preventing residue from remaining on the surface of the polished object.

[0117] The Shore A hardness of the polishing pad is measured according to JIS K 6253-3:2012 and based on a Type A durometer.

[0118] It is preferable that the polishing pad has grooves that allow the polishing fluid to accumulate.

[0119] There are no particular restrictions on the polishing conditions. For example, the rotation speed of the polishing platen and the head (carrier) can be 10 rpm (0.17 s). -1 ) or more 100rpm(1.7s -1 The polishing pressure is preferably 0.5 psi (3.5 kPa) or more and 10 psi (69 kPa) or less. The method of supplying the polishing composition to the polishing pad is not particularly limited, and for example, a method of continuous supply using a pump or the like (flow-through) is employed. There is no limit to the amount supplied, but it is preferable that the surface of the polishing pad is always covered with the polishing composition, and it is preferably 10 mL / min or more and 5000 mL / min or less. The polishing time is also not particularly limited, but for the step using the polishing composition, it is preferably 5 seconds or more and 180 seconds or less.

[0120] [Surface treatment method] The present invention relates to a surface treatment method, which includes treating the surface of a polished object using the above-described surface treatment composition.

[0121] According to one embodiment of the present invention, a surface treatment method can be used to sufficiently remove residue remaining on the surface of a polished object. That is, according to another embodiment of the present invention, a method for reducing residue on the surface of a polished object is provided, which involves surface treating the polished object using the above-mentioned surface treatment composition.

[0122] A surface treatment method according to one embodiment of the present invention is performed by directly contacting a polished object containing silicon oxide with a surface treatment composition according to the present invention. While not particularly limited, examples include a rinse polishing method and a washing method. Thus, a surface treatment method according to one embodiment of the present invention is a rinse polishing method or a washing method. Furthermore, a surface treatment composition according to one embodiment of the present invention is a rinse polishing composition or a washing composition. Rinse polishing and washing are performed to remove foreign matter (inorganic oxide abrasive particles, pad debris, metal contamination, etc.) from the surface of a polished object and to obtain a clean surface.

[0123] The surface treatment composition according to the present invention is particularly suitable for use in rinse polishing. Rinse polishing refers to a process performed on a polishing platen to which a polishing pad is attached, in which residue on the surface of a polished object is removed by the frictional force (physical action) of the polishing pad and the action of the surface treatment composition. Specific examples of rinse polishing are not particularly limited, but include a process in which, after polishing the object to be polished (e.g., final polishing, finish polishing, etc.), the polished object is placed on the polishing platen of the polishing apparatus, and the polished object is brought into contact with the polishing pad, while the surface treatment composition is supplied to the contact area, and the polished object and the polishing pad are slid relative to each other. The rinse polishing may be performed on the same polishing platen used for polishing the object (e.g., final polishing, finish polishing, etc.), or on a different polishing platen than the one used for the polishing. Among these, it is preferable that the rinse polishing process be performed on a polishing platen different from the one used for polishing the workpiece (e.g., final polishing, finish polishing, etc.).

[0124] Rinse polishing is performed by directly contacting the surface treatment composition according to the present invention with a polished object containing silicon oxide. It is believed that the silicon oxide, inorganic oxide abrasive grains, and possibly polyurethane are negatively charged by the action of the surface treatment composition due to the adhesion of the zeta potential adjusting agent. Then, the inorganic oxide abrasive grains, and possibly polyurethane, are removed from the surface of the polished object containing silicon oxide by the frictional force (physical action) of the polishing pad and the action of the surface treatment composition, and their re-adhesion is prevented. At this time, by utilizing the friction between the polishing pad and the polishing platen (friction between the polishing pad and the residue), the residue such as inorganic oxide abrasive grains and pad debris is removed more effectively. After the rinse polishing, processes such as washing with water (post-washing treatment described later) are performed, which easily removes the zeta potential adjusting agent from the surface of the silicon nitride. As a result, a polished object containing silicon oxide can be obtained with a significantly reduced amount of residue including inorganic oxide abrasive grains.

[0125] The rinse polishing process is not particularly limited, but it is preferable to use a general polishing apparatus that has a holder for holding the object to be polished, a motor with adjustable rotation speed, and a polishing platen to which a polishing pad (abrasive cloth) can be attached. Either a single-sided polishing apparatus or a double-sided polishing apparatus may be used. As the polishing pad, general nonwoven fabrics, polyurethane, and porous fluororesins can be used without particular limitation, but polyurethane is preferred from the viewpoint of further reducing residue. It is preferable that the polishing pad has grooves that allow the polishing liquid to accumulate. Furthermore, when chemical mechanical polishing and rinse polishing are performed using the same polishing apparatus, it is preferable that the polishing apparatus is equipped with a nozzle for discharging a surface treatment composition according to one embodiment of the present invention, in addition to a nozzle for discharging a polishing composition.

[0126] There are no particular restrictions on the processing conditions, but for example, the pressure between the polished workpiece and the polishing pad is preferably between 0.5 psi (3.5 kPa) and 10 psi (69 kPa). The head rotation speed is 10 rpm (0.17 s). -1) or more 100rpm(1.7s -1 ) or less is preferable. Also, the rotation speed of the polishing platen should be 10 rpm (0.17 s). -1 ) or more 100rpm(1.7s -1 The following are preferred. There is no limit to the flow rate, but it is preferable that the surface of the polished workpiece is covered with the surface treatment composition, for example, 10 mL / min to 5000 mL / min. There is also no particular limit to the surface treatment time, but it is preferable that it is 5 seconds to 180 seconds. In this invention, since the increase in the number of residues is suppressed even with long surface treatment times, the surface treatment time is preferably 20 seconds or more, more preferably 30 seconds or more, and even more preferably 45 seconds or more. The upper limit for the surface treatment time is usually within 5 minutes.

[0127] The surface treatment composition according to the present invention is also suitably used in cleaning treatments. In this specification, cleaning treatment refers to a treatment performed when the polished object to be polished has been removed from the polishing platen, and which removes residue from the surface of the polished object mainly by the action of the surface treatment composition. Specific examples of cleaning treatment include a treatment in which, after polishing (e.g., final polishing, finish polishing, etc.) of the object to be polished, or after a rinse polishing treatment following polishing, the polished object to be polished is removed from the polishing platen and brought into contact with the surface treatment composition. In the contact state between the surface treatment composition and the polished object to be polished, means of applying frictional force (physical action) to the surface of the polished object to be polished may be used further.

[0128] The cleaning method is not particularly limited, but examples include immersing a polished object in a surface treatment composition and performing ultrasonic treatment as needed, or holding a polished object and bringing a cleaning brush into contact with it, while supplying the surface treatment composition to the contact area and rubbing the surface of the polished object with the brush.

[0129] The cleaning apparatus is not particularly limited, but examples include a batch-type cleaning apparatus that simultaneously surfaces multiple polished objects contained in a cassette, a single-wafer cleaning apparatus that surfaces a single polished object mounted in a holder, and a polishing apparatus equipped with a cleaning device that removes a polished object from a polishing platen and then scrubs the object with a cleaning brush. Here, as the polishing apparatus, a general polishing apparatus having a holder for holding polished objects, a motor with adjustable rotation speed, a cleaning brush, etc., can be used. The cleaning brush is not particularly limited, but examples include a resin brush such as PVA (polyvinyl alcohol).

[0130] There are no particular restrictions on the cleaning conditions; they can be set appropriately depending on the type of polished object and the type and amount of impurities to be removed.

[0131] [Post-cleaning process] In a surface treatment method according to one embodiment of the present invention, the polished workpiece may be further cleaned after the surface treatment. In this specification, this cleaning treatment is referred to as post-cleaning. Specific examples of post-cleaning are not particularly limited, but include, for example, a method of pouring water over the polished workpiece after surface treatment, a method of immersing the polished workpiece after surface treatment in water, or a method of rubbing the polished workpiece after surface treatment with a cleaning brush while pouring water over it. The method, apparatus, and conditions of the post-cleaning treatment are not particularly limited, but refer to, for example, the description of the cleaning treatment. The water used for the post-cleaning treatment is not particularly limited, but it is particularly preferable to use deionized water.

[0132] By performing surface treatment with the surface treatment composition according to one embodiment of the present invention, the residue becomes extremely easy to remove. Therefore, after surface treatment with the surface treatment composition according to one embodiment of the present invention, further washing with water will result in extremely effective removal of the residue.

[0133] After post-cleaning, it is preferable to dry the polished object by removing any water droplets adhering to its surface using a spin dryer or similar device. Alternatively, the surface of the polished object may be dried by air blow drying.

[0134] [Manufacturing method for semiconductor substrates] The surface treatment method of the present invention is suitably applicable when the polished object to be polished is a polished semiconductor substrate. That is, according to another embodiment of the present invention, a method for manufacturing a semiconductor substrate is also provided, in which the polished object to be polished is a polished semiconductor substrate, and the polished semiconductor substrate is treated by the above surface treatment method.

[0135] In other words, the method for manufacturing a semiconductor substrate of the present invention includes a polishing step of obtaining a polished semiconductor substrate by polishing a pre-polished semiconductor substrate containing silicon oxide using a polishing composition containing inorganic oxide abrasive particles, where the polished object to be polished is a polished semiconductor substrate, and a surface treatment step of reducing the residue containing the inorganic oxide abrasive particles on the surface of the polished semiconductor substrate using the surface treatment method of the present invention.

[0136] According to one embodiment of the present invention, in a method for manufacturing a semiconductor substrate, the inorganic oxide abrasive grains include cerium oxide abrasive grains, and the surface treatment composition used in the surface treatment step controls the zeta potential of the cerium oxide abrasive grains to -30mV or less.

[0137] According to one embodiment of the present invention, in a method for manufacturing a semiconductor substrate, the polishing step includes using a polishing pad made of polyurethane, the residue further includes the polyurethane, and the surface treatment composition used in the surface treatment step controls the zeta potential of the polyurethane to -30mV or less.

[0138] Details of the semiconductor substrate to which this manufacturing method is applied are as described in the description of the polished object to be surface-treated with the above-mentioned surface treatment composition.

[0139] Furthermore, the method for manufacturing a semiconductor substrate is not particularly limited as long as it includes a step (surface treatment step) of surface-treating the surface of a polished semiconductor substrate using a surface treatment composition according to one embodiment of the present invention, or surface-treating it using a surface treatment method according to one embodiment of the present invention.

[0140] [Semiconductor substrate manufacturing system] The present invention also relates to a semiconductor substrate manufacturing system comprising a workpiece containing silicon dioxide, a polishing pad, a polishing composition comprising inorganic oxide abrasive particles, and the above-mentioned surface treatment composition. Accordingly, according to another aspect of the present invention, a semiconductor substrate manufacturing system is also provided comprising a workpiece containing silicon dioxide, a polishing pad, a polishing composition comprising cerium oxide abrasive particles, and a surface treatment composition, wherein the surface of the workpiece, after being polished using the polishing composition and the polishing pad, is brought into contact with the surface treatment composition.

[0141] Preferred embodiments of the abrasive object containing silicon dioxide, the abrasive pad, the polishing composition containing inorganic oxide abrasive grains, and the surface treatment composition applied to the semiconductor substrate manufacturing system of the present invention are the same as described above, and therefore will not be described.

[0142] In one embodiment of the present invention, the semiconductor substrate manufacturing system may simultaneously surface-treat both sides of a polished object by bringing them into contact with a polishing pad and a surface treatment composition, or it may surface-treat only one side of a polished object by bringing it into contact with a polishing pad and a surface treatment composition. The preferred embodiments of the surface treatment are the same as described above and are therefore omitted from this description.

[0143] [Residue removal effect] A surface treatment composition according to one embodiment of the present invention is preferable to one that is highly effective in removing residue from the surface of a polished object. That is, when a polished object is surface-treated with the surface treatment composition, it is preferable to have fewer residues remaining on the surface. Specifically, when a polished object is surface-treated with the surface treatment composition, it is preferable that the total number of residues is 10,000 or less, more preferably 7,000 or less, even more preferably 5,000 or less, particularly preferably 3,000 or less, and particularly preferably 2,000 or less. On the other hand, since it is preferable for the total number of residues to be as low as possible, there is no particular lower limit, but it is substantially 100 or more.

[0144] Furthermore, when a polished object is surface-treated using the surface treatment composition, the number of abrasive particles is preferably 6,000 or less, more preferably 4,000 or less, even more preferably 3,500 or less, even more preferably 2,500 or less, and particularly preferably 2,000 or less. On the other hand, since a smaller number of abrasive particles is preferable, there is no particular lower limit, but for example, it is 50 or more.

[0145] Furthermore, when a polished object is surface-treated using the surface treatment composition, the number of polyurethane residues is preferably 4000 or less, more preferably 3000 or less, even more preferably 2500 or less, and particularly preferably 1500 or less. On the other hand, since a smaller number of polyurethane residues is preferable, there is no particular lower limit, but for example, it is 50 or more.

[0146] The above-mentioned residue counts are based on values ​​measured according to the method described in the examples, after surface treatment has been performed according to the method described in the examples.

[0147] While embodiments of the present invention have been described in detail, these are descriptive and illustrative, and not limiting, and it is clear that the scope of the present invention should be interpreted by the appended claims.

[0148] The present invention encompasses the following embodiments and forms.

[0149] [1] A surface treatment method for reducing residue containing inorganic oxide abrasive particles on the surface of a polished object containing silicon dioxide, using a surface treatment composition, The surface treatment composition comprises a zeta potential adjusting agent having a sp value greater than 9 and less than or equal to 11 and having negatively charged functional groups, and a dispersion medium. A surface treatment method comprising controlling the zeta potential of the silicon oxide to a negative value and controlling the zeta potential of the inorganic oxide abrasive grains to -30 mV or less using the surface treatment composition.

[0150] [2] The surface treatment method according to [1] above, wherein the inorganic oxide abrasive grains include cerium oxide abrasive grains, and the surface treatment composition controls the zeta potential of the cerium oxide abrasive grains to -30mV or less.

[0151] [3] The surface treatment method according to [1] or [2], wherein the residue further comprises polyurethane, and the surface treatment composition further controls the zeta potential of the polyurethane to -30 mV or less.

[0152] [4] The surface treatment method according to any one of [1] to [3] above, wherein the zeta potential adjusting agent is an anionic surfactant having a molecular weight of less than 1,000.

[0153] [5] The surface treatment method according to [4] above, wherein the anionic surfactant has at least one functional group selected from the group consisting of a sulfonic acid (salt) group, a sulfate (salt) group, a phosphonic acid (salt) group, and a phosphoric acid (salt) group.

[0154] [6] The surface treatment method according to any one of [1] to [5] above, further comprising a pH adjusting agent in the surface treatment composition.

[0155] [7] The surface treatment method according to any one of [1] to [6] above, wherein the pH value of the surface treatment composition is 2 or more and less than 5.

[0156] [8] A surface treatment method according to any of [1] to [7] above, which is a rinse polishing method or a cleaning method.

[0157] [9] The polished object to be polished is a polished semiconductor substrate, A polishing process to obtain a polished semiconductor substrate by polishing a pre-polishing semiconductor substrate containing silicon dioxide using a polishing composition containing inorganic oxide abrasive particles, A surface treatment step of reducing the residue containing the inorganic oxide abrasive particles on the surface of the polished semiconductor substrate by a surface treatment method according to any one of claims 1 to 8, A method for manufacturing a semiconductor substrate, including the method described above.

[0158]

[10] The inorganic oxide abrasive grains include cerium oxide abrasive grains, A method for manufacturing a semiconductor substrate according to [9] above, comprising controlling the zeta potential of the cerium oxide abrasive grains to -30 mV or less using the surface treatment composition used in the surface treatment step.

[0159]

[11] The polishing step includes using a polishing pad made of polyurethane, The residue further comprises the polyurethane, A method for manufacturing a semiconductor substrate according to [9] or

[10] , further comprising controlling the zeta potential of the polyurethane to -30 mV or less using the surface treatment composition used in the surface treatment step.

[0160]

[12] The method for manufacturing a semiconductor substrate according to

[11] , wherein the Shore A hardness of the polishing pad is 40° or more and 100° or less.

[0161]

[13] A surface treatment composition used to reduce the residue containing inorganic oxide abrasive particles on the surface of a polished object containing silicon dioxide, A zeta potential adjusting agent having a negatively charged functional group and an sp value greater than 9 and less than or equal to 11, and a dispersion medium, A surface treatment composition having the function of controlling the zeta potential of the silicon dioxide to a negative value and controlling the zeta potential of the inorganic oxide abrasive grains to -30mV or less.

[0162]

[14] The surface treatment composition according to

[13] , wherein the inorganic oxide abrasive grains include cerium oxide abrasive grains, and the surface treatment composition has the function of controlling the zeta potential of the cerium oxide abrasive grains to -30 mV or less.

[0163]

[15] The surface treatment composition according to

[13] or

[14] , wherein the residue further comprises polyurethane, and the surface treatment composition further has the function of controlling the zeta potential of the polyurethane to -30 mV or less.

[0164]

[16] A surface treatment composition according to any one of the above

[13] to

[15] , which is a rinse polishing composition or a cleaning composition.

[0165]

[17] A semiconductor substrate manufacturing system comprising a workpiece containing silicon dioxide, a polishing pad, a polishing composition containing inorganic oxide abrasive grains, and a surface treatment composition according to any one of

[13] to

[16] above, A semiconductor substrate manufacturing system comprising bringing the surface of an object to be polished, after being polished using the polishing composition and the polishing pad, into contact with the surface treatment composition. [Examples]

[0166] The present invention will be described in more detail using the following examples and comparative examples. However, the technical scope of the present invention is not limited to the following examples. Unless otherwise specified, "%" and "parts" mean "mass%" and "parts by mass," respectively. In addition, in the following examples, unless otherwise specified, the operations were carried out under room temperature (20-25°C) / relative humidity of 40-50%RH. Furthermore, in the following examples, "TEOS substrate" means a substrate having a silicon oxide film produced using tetraethyl orthosilicate as a precursor.

[0167] [Preparation of surface treatment composition] [Preparation of surface treatment composition A1] Surface treatment composition A1 was prepared by mixing 100 parts by mass of the entire composition with POE allylphenyl ether ammonium sulfate (product name: Hythenol (registered trademark, hereinafter the same) NF08, manufactured by Daiichi Kogyo Seiyaku Co., Ltd.) as a zeta potential adjusting agent, nitric acid as a pH adjusting agent, and water (deionized water) as a dispersion medium. The amount of zeta potential adjusting agent added (content) was 0.1 g / kg relative to the total mass of surface treatment composition A1, and the amount of pH adjusting agent added (content) was set to the amount at which the pH of surface treatment composition A1 became 3 (liquid temperature: 25°C). pH was measured using a pH meter (product name: LAQUA (registered trademark), manufactured by Horiba, Ltd.).

[0168] [Preparation of surface treatment compositions A2 to A6] Surface treatment compositions A2 to A6 were prepared in the same manner as surface treatment composition A1, except that the type of zeta potential adjusting agent was changed as shown in Table 1 below, and the amount of pH adjusting agent was changed so that the pH of the resulting surface treatment composition was as shown in Table 1 below.

[0169] [Preparation of surface treatment compositions B1 to B9] Each of the surface treatment compositions B1 to B9 was prepared in the same manner as the preparation of surface treatment composition A1, except that the type and content of the zeta potential adjusting agent or additive (compounds used in place of the zeta potential adjusting agent are referred to as additives) listed in Table 1 were changed as shown in Table 1 below, and the amount of pH adjusting agent was changed so that the pH of the resulting surface treatment composition was as shown in Table 1 below.

[0170] Surface treatment compositions A1 to A6 are the surface treatment compositions used in the examples, and surface treatment compositions B1 to B9 are the surface treatment compositions used in the comparative examples.

[0171] Details of the zeta potential modifiers and additives used in surface treatment compositions A1-A6 and B1-B9 are shown below. Table 1 shows the sp values ​​of the zeta potential modifiers and additives used. The sp values ​​are calculated using the Fedors method (Reference: RFFedors, Polym.Eng.Sci., 14[2]147(1974)).

[0172] • POE allylphenyl ether ammonium sulfate, manufactured by Daiichi Kogyo Seiyaku Co., Ltd., catalog number: Hytenol NF08 (EO=10) Alkyl diphenyl ether disulfonate, manufactured by Takemoto Oil Co., Ltd., product number: Paionin A-43-S (alkyl=C12) • POE allylphenyl ether phosphate amine salt, manufactured by Takemoto Oil & Fat Co., Ltd., product number: New Calgen FS-3AQ (a mixture of EO=3-10) • Ammonium lauryl sulfate, manufactured by Kao Corporation, product number: Emal AS-25R • Sodium lauryl glycol carboxylate, manufactured by Sanyo Chemical Industries, Ltd., product number: Viewlight SHAA • Sodium polyoxyethylene tridecyl ether acetate, manufactured by Nikko Chemicals Co., Ltd., product code: NIKKOL ECTD-3NEX • Disodium 3-amino-1,5-naphthalenedisulfonic acid • Polyvinyl alcohol (PVA), Mw=10,000: Manufactured by Nippon Vinegar Vivoval Co., Ltd., Part Number: JMR-10HH • Polyglycerin lauryl ether (PGLE), Mw=2,000: Manufactured by Daicel Corporation, Part Number: Cermoris (registered trademark) B044 (glycerin 20-mer) POE lauryl ether, manufactured by Nippon Emulsion Co., Ltd., product code: EMALEX 709 (EO=9).

[0173] [Examples 1-24, Comparative Examples 1-27, and Reference Examples 1-5] To evaluate the performance of the obtained surface treatment compositions A1-A6 and B1-B9, a CMP (Chemical Polishing) process was performed on the workpiece, followed by a rinse polishing process on the workpiece after the CMP process. The rinse polishing process was performed using the surface treatment compositions A1-A6 and B1-B9.

[0174] [CMP process] First, a CMP (Chemical Polishing) process was performed on the object to be polished. The object to be polished was either a TEOS substrate or a SiN substrate, and the following two types of polishing compositions were prepared.

[0175] "Polishing composition" Polishing composition C1 (Polishing composition using CeO2 abrasive grains as abrasive grains) Colloidal ceria (Solvay HC30) (average primary particle size: 30 nm, average secondary particle size: 70 nm, 30 wt% aqueous dispersion): 1% by mass Ammonium polyacrylate (Aron A-30SL, manufactured by Toagosei Co., Ltd.) (Mw: 6000, 40% aqueous solution): 0.6% by mass 30% maleic acid aqueous solution (manufactured by Kanto Chemical Co., Ltd.): 0.2% by mass Water: remainder (Adjust to pH 4).

[0176] • Polishing composition C2 (a polishing composition using SiO2 abrasive grains as abrasive grains) Anion-modified colloidal silica (sulfonic acid-functionalized silica prepared by the method described in “Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”, Chem. Commun. 246-247 (2003)) (average primary particle size: 35 nm, average secondary particle size: 70 nm): 2% by mass 30% maleic acid aqueous solution (manufactured by Kanto Chemical Co., Ltd.): 0.002% by mass Ammonium sulfate (manufactured by Kanto Chemical Co., Ltd.): 0.25% by mass Water: remainder (Adjust pH to 3).

[0177] "CMP process" For the semiconductor substrates used as the polishing targets, TEOS substrates or SiN substrates were polished using a polishing composition under the following conditions. Here, 300mm wafers were used for both the TEOS substrates and the SiN substrates. • TEOS substrate (300mm wafer, manufactured by Advantech Co., Ltd., part number: 300mm P-TEOS 10000A) • SiN substrate (300mm wafer, manufactured by Advantech Co., Ltd., part number: (CVD-)LP-SiN 2500A) - Polishing equipment and polishing conditions - Polishing equipment: FREX300E manufactured by Ebara Corporation Polishing pad: Use one of the following: • Foamed polyurethane pad H800-Type1 (Shore A hardness: 89.4°) manufactured by Fuji Spinning Holdings Co., Ltd. • Foamed polyurethane pad H800-CZM (Shore A hardness: 78.9°) manufactured by Fuji Spinning Holdings Co., Ltd. • Foamed polyurethane pad X400-CZM (Shore A hardness: 76.3°) manufactured by Fuji Spinning Holdings Co., Ltd. Conditioner (dresser): Nylon brush (made by 3M) Polishing pressure: 2.0 psi (1 psi = 6894.76 Pa) Polishing plate rotation speed: 80 rpm Head rotation speed: 80 rpm Supply of polishing composition: flow-through Polishing composition supply amount: 200mL / min Polishing time: 30 seconds.

[0178] [Rinse polishing process] After polishing the surface of the TEOS substrate in the above CMP process, the polished TEOS substrate was removed from the polishing platen as the polished object. Next, within the same polishing apparatus, the polished TEOS substrate was mounted on a separate polishing platen, and a rinse polishing treatment was performed on the surface of the polished TEOS substrate using the surface treatment compositions A1-A6 and B1-B9 prepared above, under the following conditions; -Rinse polishing apparatus and rinse polishing conditions- Polishing pressure: 1.0 psi Plate rotation speed: 60 rpm Head rotation speed: 60 rpm Supply of polishing composition: flow-through Surface treatment composition supply rate: 300 mL / min Polishing time: 60 seconds.

[0179] After the rinse polishing process, the substrate surface was brush-cleaned with deionized water for 60 seconds to obtain a polished TEOS substrate that had undergone the rinse polishing process.

[0180] <Rating> Each polished TEOS substrate after the rinse polishing process described above was measured and evaluated for the following items. The evaluation results are shown in Tables 2 to 6.

[0181] Table 2 shows the "evaluation results of each surface treatment composition A1 to A6 and B1 to B9 on polished TEOS substrates (Examples 1 to 6 and Comparative Examples 1 to 9)" obtained by polishing TEOS substrates (objects to be polished) using polishing composition C1 and polishing pad H800-Type1 in the polishing process.

[0182] Table 3 shows the "evaluation results of each surface treatment composition A1-A6 and B1-B9 on polished TEOS substrates (Examples 7-12 and Comparative Examples 10-18)" obtained by polishing TEOS substrates (objects to be polished) using polishing composition C1 and H800-CZM as the polishing pad during the polishing process.

[0183] Table 4 shows the "evaluation results of each surface treatment composition A1-A6 and B1-B9 on polished TEOS substrates (Examples 13-18 and Comparative Examples 19-27)" obtained by polishing TEOS substrates (objects to be polished) using polishing composition C1 and X400-CZM as the polishing pad during the polishing process.

[0184] Table 5 shows the "evaluation results of each surface treatment composition A1 to A6 on polished TEOS substrates (Examples 19 to 24)" obtained by polishing a TEOS substrate (object to be polished) using polishing composition C2 and polishing pad H800-Type1 in the polishing process.

[0185] Table 6 shows the "evaluation results of each surface treatment composition A1 to A5 on polished SiN substrates (Reference Examples 1 to 5)" obtained by polishing a SiN substrate (object to be polished) using polishing composition C1 and polishing pad H800-Type1 in the polishing process. Table 6 also shows the evaluation results of polished TEOS substrates under the same conditions. These reference examples are intended to test whether the surface treatment compositions of the present invention can exert the effects of the present invention on SiN substrates, and to test whether the surface treatment compositions of the present invention can be suitably used even when the polished object to be polished contains silicon oxide and silicon nitride.

[0186] [Evaluation of total residue quantity] The total number of residues was evaluated using a Surfscan® SP5 optical inspection machine manufactured by KLA-Tencor Co., Ltd., to assess the number of residues on the surface of the polished TEOS substrate after rinse polishing. Specifically, the number of residues with a diameter of 50 μm or more was counted in the remaining portion after excluding a 5 mm wide portion from the outer edge of one side of the polished TEOS substrate (the portion from 0 mm to 5 mm wide, with the outer edge set to 0 mm). A smaller number of residues is preferable. The results are shown in Tables 2 to 6 below. Note that if the total number of residues exceeds 10,000, the number cannot be detected, so it is indicated as ">10,000" in Tables 2 to 6.

[0187] [Evaluation of abrasive residue count and polyurethane residue count] For the polished TEOS substrates after the rinse polishing process described above, the number of abrasive grains and polyurethane residues was measured by SEM observation using a Hitachi High-Tech Review SEM RS6000. First, 100 residues were sampled from the remaining portion of one side of the polished object, excluding a 5 mm wide section from the outer edge, using SEM observation. Next, the type of residue (abrasive grains or polyurethane) was identified from the 100 sampled residues by visual SEM observation, and the number of abrasive grains (CeO2 or SiO2) and polyurethane was confirmed to calculate the percentage of abrasive grains and polyurethane residues in the total residue. The product of the total number of residues with a diameter exceeding 50 μm (measured by the evaluation of the total residue count described above) and the percentage of abrasive grains in the total residue calculated by SEM observation (%) was used to calculate the number of abrasive grains (pieces). Furthermore, the number of polyurethane residues was calculated by multiplying the total number of residues (pieces) with a diameter exceeding 50 μm, as measured by the above-mentioned evaluation of the total number of residues, by the percentage of polyurethane residues in the residue calculated by SEM observation.

[0188] In Tables 2 to 6, "Number of abrasive particles" refers to the residue of inorganic oxide abrasive particles (CeO2 abrasive particle residue or SiO2 abrasive particle residue), and "Number of polyurethane particles" refers to the residue of the polishing pad. Note that when the total number of particles exceeded 10,000, it was not possible to calculate the number of abrasive particles and the percentage of polyurethane residue in the residue. Since the majority of the residue is likely to be abrasive particles, in Tables 2 to 6, when the total number of particles exceeds 10,000, the number of abrasive particles is indicated as ">10000" and the number of polyurethane particles is indicated as "-".

[0189] [Zeta potential measurement] [Zeta potential measurement of inorganic oxide abrasive grains] The zeta potential of inorganic oxide abrasive grains was measured using a Zetasizer Nano ZSP manufactured by Spectris Corporation (Malvern Division). The zeta potential of CeO2 abrasive grains during rinse polishing with a surface treatment composition, and the zeta potential of anion-modified SiO2 abrasive grains during rinse polishing with a surface treatment composition, were measured using the following model experiments. These values ​​are shown in Tables 1 to 6 below.

[0190] (CeO2 abrasive grains) A CeO2 particle dispersion (Solvay HC30, a 30% by mass aqueous dispersion of colloidal ceria with an average primary particle diameter of 30 nm and an average secondary particle diameter of 60 nm) was added to the surface treatment composition prepared above to prepare a measurement solution with a CeO2 particle concentration of 0.02% by mass (the CeO2 particle content in the measurement solution was 0.02% by mass relative to the total mass of the measurement solution). The obtained measurement solution was filled into the measurement cell of the above-mentioned apparatus (Zetasizer Nano ZSP), and the zeta potential of the CeO2 abrasive grains was measured.

[0191] (Anionically modified SiO2 abrasive grains) An anion-modified SiO2 particle dispersion (a 19.5% by mass aqueous dispersion of anion-modified colloidal silica (sulfonic acid-functionalized silica prepared by the method described in "Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups", Chem. Commun. 246-247 (2003), with an average primary particle diameter of 35 nm and an average secondary particle diameter of 70 nm)) was added to the surface treatment composition prepared above to prepare a measurement solution with an anion-modified SiO2 particle concentration of 0.02% by mass (the content of anion-modified SiO2 particles in the measurement solution was 0.02% by mass relative to the total mass of the measurement solution). The obtained measurement solution was filled into the measurement cell of the above-mentioned apparatus (Zetasizer Nano ZSP), and the zeta potential of the anion-modified SiO2 abrasive grains was measured.

[0192] [Zeta potential measurement of polished TEOS substrates, polished SiN substrates, and polyurethane] The zeta potentials of the polished TEOS substrate and polyurethane were measured using the SurPASS3 solid zeta potential meter manufactured by Anton Paar Japan Co., Ltd. The zeta potentials of the polished TEOS substrate surface, the polished SiN substrate surface, and polyurethane surface during rinse polishing with the surface treatment composition were measured using the following model experiments. These values ​​are shown in Table 1 below.

[0193] The zeta potential of polyurethane was measured using a polyurethane pad (Foamed Polyurethane Pad H800-Type1, manufactured by Fuji Spinning Holdings Co., Ltd.) cut into 60mm squares.

[0194] The zeta potential of the polished TEOS substrate surface was measured using a TEOS substrate (300mm wafer, manufactured by Advantech Co., Ltd., part number: 300mm P-TEOS 10000A) cut into 60mm squares. The zeta potential of the polished SiN substrate surface was measured using a SiN substrate (300mm wafer, manufactured by Advantech Co., Ltd., part number: (CVD-)LP-SiN 2500A) cut into 60mm squares.

[0195] Each of these objects was placed on a zeta potential meter. Next, the surface treatment composition prepared above was passed through the objects, and the zeta potential of each object was measured.

[0196] [Table 1]

[0197] [Table 2]

[0198] [Table 3]

[0199] [Table 4]

[0200] [Table 5]

[0201] [Table 6]

[0202] As shown in Tables 2 to 4, in Examples 1 to 18, it was found that after polishing the TEOS substrate with polishing composition C1 (i.e., a polishing composition using cerium oxide abrasive grains as abrasive grains), rinsing the polished TEOS substrate with surface treatment compositions A1 to A6 significantly reduced the amount of residue (total number of residues) on the polished TEOS substrate. Furthermore, as shown in Table 5, in Examples 19 to 24, it was found that even when the TEOS substrate was polished with polishing composition C2 (i.e., a polishing composition using anion-modified colloidal silica abrasive grains as abrasive grains), rinsing the polished TEOS substrate with surface treatment compositions A1 to A6 significantly reduced the amount of residue (total number of residues) on the polished TEOS substrate.

[0203] Table 6 shows that the residue reduction effect of surface treatment compositions A1 to A5 was confirmed even on SiN substrates. Therefore, as shown in Reference Examples 1 to 5, it was found that the surface treatment compositions of the present invention can exert the effects of the present invention even on SiN substrates. This indicates that the surface treatment compositions of the present invention can be suitably used even when the polished object contains silicon oxide and silicon nitride.

[0204] From this, it can be seen that when a workpiece containing silicon dioxide is polished using an abrasive composition containing cerium oxide abrasive grains or anion-modified colloidal silica abrasive grains, the residue (abrasive grains, polishing pad) adhering to the polished workpiece can be sufficiently removed by surface treatment of the polished workpiece with surface treatment compositions A1 to A6 of the present invention. The above is the result of evaluation immediately after the manufacture of the surface treatment composition, but for long-term storage, it is preferable to include an antifungal agent (preservative). It should be noted that the antifungal agent (preservative) has little to no effect on the above results, so it is considered that a surface treatment composition containing an antifungal agent (preservative) will yield similar results.

Claims

1. A surface treatment method for reducing residue containing inorganic oxide abrasive particles on the surface of a polished object containing silicon dioxide, using a surface treatment composition, The surface treatment composition comprises a zeta potential adjusting agent having a sp value greater than 9 and less than or equal to 11 and having negatively charged functional groups, and a dispersion medium. The zeta potential adjusting agent comprises one or more selected from the group consisting of polyoxyethylene alkyl ether phosphate, polyoxyethylene allyl phenyl ether phosphate, polyoxyethylene alkyl phenyl ether phosphate, polyoxyalkylene alkyl ether sulfate, polyoxyalkylene allyl ether sulfate, polyoxyalkylene allyl phenyl ether sulfate, polyoxyalkylene alkylallyl phenyl ether sulfate, polyoxyalkylene phenyl ether sulfate, polyoxyalkylene polycyclic phenyl ether sulfate, and salts thereof. A surface treatment method comprising controlling the zeta potential of the silicon dioxide to a negative value and controlling the zeta potential of the inorganic oxide abrasive grains to -30 mV or less using the surface treatment composition.

2. The surface treatment method according to claim 1, wherein the zeta potential adjusting agent comprises one or more selected from the group consisting of polyoxyethylene alkyl ether phosphate, polyoxyethylene allylphenyl ether phosphate, polyoxyethylene alkylphenyl ether phosphate, and salts thereof.

3. The surface treatment method according to claim 1 or 2, wherein the inorganic oxide abrasive grains include cerium oxide abrasive grains, and the surface treatment composition controls the zeta potential of the cerium oxide abrasive grains to -30 mV or less.

4. The surface treatment method according to claim 1 or 2, wherein the residue further comprises polyurethane, and the surface treatment composition further controls the zeta potential of the polyurethane to -30 mV or less.

5. The surface treatment method according to claim 1 or 2, wherein the zeta potential adjusting agent has a molecular weight of less than 1,000.

6. The surface treatment method according to claim 1 or 2, wherein the surface treatment composition further comprises a pH adjusting agent.

7. The surface treatment method according to claim 1 or 2, wherein the pH value of the surface treatment composition is 2 or more and less than 5.

8. A surface treatment method according to claim 1 or 2, wherein the method is a rinse polishing treatment method or a cleaning treatment method.

9. The polished object to be polished is a polished semiconductor substrate. A polishing process to obtain a polished semiconductor substrate by polishing a pre-polishing semiconductor substrate containing silicon dioxide using a polishing composition containing inorganic oxide abrasive particles, A surface treatment step of reducing the residue containing inorganic oxide abrasive particles on the surface of the polished semiconductor substrate by the surface treatment method described in claim 1, A method for manufacturing a semiconductor substrate, including the method described above.

10. The inorganic oxide abrasive grains include cerium oxide abrasive grains. A method for manufacturing a semiconductor substrate according to claim 9, comprising controlling the zeta potential of the cerium oxide abrasive grains to -30 mV or less using the surface treatment composition used in the surface treatment step.

11. The polishing step includes using a polishing pad made of polyurethane, The residue further comprises the polyurethane, A method for manufacturing a semiconductor substrate according to claim 9 or 10, further comprising controlling the zeta potential of the polyurethane to -30 mV or less using the surface treatment composition used in the surface treatment step.

12. The method for manufacturing a semiconductor substrate according to claim 11, wherein the Shore A hardness of the polishing pad is 40° or more and 100° or less.

13. A surface treatment composition used to reduce residue containing inorganic oxide abrasive particles on the surface of a polished object containing silicon dioxide, A zeta potential adjusting agent having a sp value greater than 9 and less than or equal to 11 and having a negatively charged functional group, and a dispersion medium, The zeta potential adjusting agent comprises one or more selected from the group consisting of polyoxyethylene alkyl ether phosphate, polyoxyethylene allyl phenyl ether phosphate, polyoxyethylene alkyl phenyl ether phosphate, polyoxyalkylene alkyl ether sulfate, polyoxyalkylene allyl ether sulfate, polyoxyalkylene allyl phenyl ether sulfate, polyoxyalkylene alkylallyl phenyl ether sulfate, polyoxyalkylene phenyl ether sulfate, polyoxyalkylene polycyclic phenyl ether sulfate, and salts thereof. A surface treatment composition having the function of controlling the zeta potential of the silicon dioxide to a negative value and controlling the zeta potential of the inorganic oxide abrasive grains to -30 mV or less.

14. The surface treatment composition according to claim 13, wherein the inorganic oxide abrasive grains include cerium oxide abrasive grains, and the surface treatment composition has the function of controlling the zeta potential of the cerium oxide abrasive grains to -30 mV or less.

15. The surface treatment composition according to claim 13 or 14, wherein the residue further comprises polyurethane, and the surface treatment composition further has the function of controlling the zeta potential of the polyurethane to -30 mV or less.

16. The surface treatment composition according to claim 13 or 14, which is a rinse polishing composition or a cleaning composition.

17. A semiconductor substrate manufacturing system comprising a workpiece containing silicon dioxide, a polishing pad, a polishing composition containing inorganic oxide abrasive particles, and the surface treatment composition according to claim 13 or 14, A semiconductor substrate manufacturing system comprising bringing the surface of an object to be polished, after being polished using the polishing composition and the polishing pad, into contact with the surface treatment composition.

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