Multi-thermal CVD chamber with shared supply and exhaust system

Abstract

To provide a substrate processing apparatus with a processing chamber for heat treatment that allows processing of multiple substrates simultaneously with improved process gas flow and heat distribution.SOLUTION: In a processing system, processing chambers 101a and 101b are dual processing chambers and share chamber body 130 and chamber body bottom 134. The chamber body includes a first set of gas injection passages 182a and a second set of gas injection passages 182b. The chamber body also includes a first set of exhaust outlets 172a and a second set of exhaust outlets 172b. The processing chamber also has a shared gas panel 108 and / or a common exhaust conduit 171.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001]

[0001] The embodiments described herein generally relate to dual heat treatment chambers. Specifically, the embodiments described herein relate to dual epitaxial deposition chambers in which two processing chambers share one or more of a chamber body, a gas injection panel, or an exhaust channel.

Background Art

[0002]

[0002] Semiconductor substrates are processed for a wide range of applications including the manufacture of integrated devices and microdevices. However, conventional hardware for processing substrates is relatively large and requires the use of more space within a manufacturing facility. In addition, conventional hardware has the drawback of insufficient throughput.

[0003]

[0003] Conventional attempts to increase the amount of substrate that can be simultaneously subjected to epitaxial processing have faced problems related to temperature control of the surface of the substrate or flow control of the process gas across the surface of the substrate. Furthermore, these conventional attempts are expensive and have a large installation footprint that occupies a large area within the working space. Therefore, there is a need for an improved heat treatment chamber in semiconductor processing.

Summary of the Invention

[0004]

[0004] The disclosure generally relates to apparatus for substrate processing. In one embodiment, the apparatus for substrate processing includes a dual chamber body. The dual chamber body includes a first processing volume section on a first side of a central plane and a second processing volume section on a second side of a central plane. An equalization port connects the first processing volume section and the second processing volume section. A first plurality of gas injection passages are formed through the dual chamber body, which are fluidly connected to the first processing volume section, and a second plurality of gas injection passages are formed through the dual chamber body, which are fluidly connected to the second processing volume section. A first exhaust port is formed in the dual chamber body on the opposite side of the first plurality of gas injection passages. The first exhaust port is fluidly connected to the processing volume section. A second exhaust port is formed through the dual chamber body on the opposite side of the second plurality of gas injection passages. The second exhaust port is fluidly connected to the second processing volume section. The apparatus further includes one or more upper window assemblies positioned above the dual chamber body. A first lower window is positioned adjacent to a first processing volume, and a second lower window is positioned adjacent to a second processing volume. A first substrate support is placed in the first processing volume, and a second substrate support is placed in the second processing volume. A first lower lamp assembly is positioned adjacent to the first lower window, and a second lower lamp assembly is positioned adjacent to the second lower window.

[0005]

[0005] In another embodiment, the apparatus for substrate processing includes a dual chamber body. The dual chamber body includes a first processing volume formed by a first cavity on a first side of a reference plane, a second processing volume formed by a second cavity on a second side of the reference plane, and an equalization port connecting the first and second processing volume sections. A first plurality of gas injection passages are fluidically connected to the first processing volume section, and a second plurality of gas injection passages are fluidly connected to the second processing volume section. A first exhaust port is formed in the dual chamber body on the opposite side of the first plurality of gas injection passages, and the first exhaust port is fluidly connected to the processing volume section. A second exhaust port is formed in the dual chamber body on the opposite side of the second plurality of gas injection passages, and the second exhaust port is fluidly connected to the processing volume section. The apparatus for substrate processing also includes one or more upper window assemblies positioned on top of the dual chamber body. A first lower window is positioned adjacent to a first processing volume, and a second lower window is positioned adjacent to a second processing volume. A first substrate support is placed in the first processing volume, and a second substrate support is placed in the second processing volume. A first lower lamp assembly is positioned adjacent to the first lower window, and a second lower lamp assembly is positioned adjacent to the second lower window.

[0006]

[0006] In yet another embodiment, the dual chamber body includes a chamber body, a first processing volume section formed through the chamber body on a first side of the reference plane, and a second processing volume section formed through the chamber body on a second side of the reference plane. A first plurality of gas injection passages are fluidly connected to the first processing volume section, and a second plurality of gas injection passages are fluidly connected to the second processing volume section. A first exhaust port is formed in the dual chamber body on the opposite side of the first plurality of gas injection passages, and the first exhaust port is fluidly connected to the processing volume section. A second exhaust port is formed in the dual chamber body on the opposite side of the second plurality of gas injection passages, and the second exhaust port is fluidly connected to the processing volume section. An equalization port connects the first processing volume section and the second processing volume section.

[0007]

[0007] To enable a detailed understanding of the above-mentioned features of the Disclosure, a specific description of the Disclosure, concisely summarized above, can be obtained by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings only show exemplary embodiments and should not be considered limiting in scope, and the Disclosure may permit other equally effective embodiments. [Brief explanation of the drawing]

[0008] [Figure 1]

[0008] This is a schematic cross-sectional view of a processing system according to one embodiment described herein. [Figure 2]

[0009] Figure 1 is a plan view of the chamber body of the processing system. [Figure 3]

[0010] Figure 2 is a partial side cross-sectional view of a portion of the chamber body. [Figure 4A]

[0011] This is a plan cross-sectional view of the chamber body shown in Figure 2, according to the first embodiment described herein. [Figure 4B]

[0012] This is a plan cross-sectional view of the chamber body shown in Figure 2, according to a second embodiment described herein. [Figure 4C]

[0013] This is a plan cross-sectional view of the chamber body shown in Figure 2, according to a third embodiment described herein. [Figure 4D]

[0014] This is a plan cross-sectional view of the chamber body shown in Figure 2, according to the fourth embodiment described herein. [Figure 5] This specification shows the steps of a method for processing a substrate according to embodiments described herein. [Figure 6]

[0016] This is a top view of a single upper window assembly located above the chamber bodies of both the first processing chamber 101a and the second processing chamber in Figures 1-3.

[0009]

[0017] To facilitate understanding, the same reference numerals were used where possible to indicate identical elements common to the drawings. Elements and features of one embodiment are considered to be usefully incorporated into other embodiments without further description. [Modes for carrying out the invention]

[0010]

[0018] Embodiments of this disclosure generally relate to apparatus and methods for semiconductor processing, and more particularly to thermal processing systems. The thermal processing system is an epitaxial deposition system. The thermal processing system includes a substrate support, one or more upper windows, one or more lower windows, a plurality of upper heating elements, a plurality of lower heating elements, an inner liner, a processing system body, one or more gas panels, and one or more vacuum pumps. In some embodiments which can be combined with other embodiments, the processing system body is a dual body having two processing chambers formed therein. The two processing chambers can share a gas panel and / or an exhaust pump, such as a vacuum pump. The dual body enables the sharing of the gas panel and / or exhaust pump. By sharing the gas panel and / or exhaust pump, equipment costs are reduced and the system footprint is also reduced. Specifically, embodiments described herein relate to a dual body for an epitaxial deposition process.

[0011]

[0019] Figure 1 is a schematic cross-sectional view of a processing system 100 according to one embodiment described herein. The processing system includes a first processing chamber 101a and a second processing chamber 101b. The first processing chamber 101a and the second processing chamber 101b are substantially identical to each other. The processing chambers 101a and 101b share a chamber body 130 and a chamber body bottom 134. The processing chambers 101a and 101b may additionally include a shared lid (not shown). The processing chambers 101a and 101b are mirror images of each other with respect to a central plane 103.

[0012]

[0020] The first processing chamber 101a defines a first processing volume 124 for processing a single substrate. The first processing chamber 101a includes a first upper window 116a, such as a dome, positioned between the first lid 104a and the first processing volume 124. The first processing chamber 101a further includes a first lower window 118a positioned below the first processing volume 124. Above the first upper window 116a are a plurality of first upper radiant heat sources 106a. The plurality of first upper radiant heat sources 106a are lamps, such as halogen lamps. The first upper radiant heat sources 106a are positioned between the first upper window 116a and the first lid 104a. The first upper radiant heat sources 106a are positioned to provide uniform heating of the substrate 155. Below the first lower window 118a are a plurality of first lower radiant heat sources 138a. The multiple first lower radiant heat sources 138a are lamps such as halogen lamps. The first lower radiant heat sources 138a are positioned between the first lower window 118a and the bottom 134 of the chamber body. The first lower radiant heat sources 138a are positioned to provide uniform heating of the substrate 155.

[0013]

[0021] The second processing chamber 101b defines a second processing volume 126 for processing a single substrate. The second processing chamber 101b includes a second upper window 116b, such as a dome. The second upper window 116b is located between the second lid 104b and the second processing volume 126. The second processing chamber 101b further includes a second lower window 118b, such as a dome located below the second processing volume 126. A plurality of second upper radiant heat sources 106b may be present above the second upper window 116b. The plurality of second upper radiant heat sources 106b are lamps, such as halogen lamps. The second upper radiant heat sources 106b are located between the second upper window 116b and the second lid 104b. The second upper radiant heat sources 106b are positioned to provide predetermined heating to the second upper window 116b. Below the second lower window 118b, there are multiple second lower radiant heat sources 138b. These multiple second lower radiant heat sources 138b are lamps such as halogen lamps. The second lower radiant heat sources 138b are positioned between the second lower window 118b and the bottom 134 of the chamber body. The second lower radiant heat sources 138b are positioned to provide a predetermined heating of the second lower window 118b.

[0014]

[0022] The first and second upper windows 116a, 116b and the first and second lower windows 118a, 118b are defined as being able to transmit infrared radiation and transmitting at least 95% of infrared radiation. In some embodiments, the first and second upper windows 116a, 116b and the first and second lower windows 118a, 118b may be made of quartz material. In some embodiments, the first and second upper windows 116a, 116b include an inner window 212 and an outer window support 214. The inner window 212 may be a thin quartz window that partially defines the processing volume sections 124, 126. The outer window support 214 supports the inner window 212 and is at least partially located within a support groove 304 (Figures 2 and 3).

[0015]

[0023] In some embodiments, the first and second upper windows 116a, 116b can be a single window such that there is a single upper window assembly 600 (Figure 6) positioned above both the first processing chamber 101a and the second processing chamber 101b. The single upper window assembly 600 can help eliminate pressure gradients across the first and second processing chambers 101a, 101b and reduce temperature gradients across the single upper window 616. In addition, the single upper window 616 eliminates the need for a central wall such as a central wall 132. The single upper window 616 is described in more detail in Figure 6 and its description.

[0016]

[0024] The processing system 100 also includes pedestal assemblies 150 and 152, respectively, located in the first and second processing chambers 101a and 101b. The liner 120 is located inside each of the first and second processing chambers 101a and 101b and surrounds each of the pedestal assemblies 150 and 152. The pedestal assembly 150 is located at least partially inside the first processing chamber 101a, and the pedestal assembly 152 is located at least partially inside the second processing chamber 101b. The liner 120 shields the chamber body 130 from the processing chemicals in the first and second processing volume sections 124 and 126. The first and second processing chambers 101a and 101b include the liner 120. The chamber body 130 is located between the upper window 116 and the lower window 118. The liner 120 is located inside the first and second processing chambers 101a and 101b. Each of the liners 120 is positioned between one of the processing volume sections 124, 126 and the chamber body 130. The exhaust plenum 170 partially surrounds the processing volume sections 124, 126, and one or more exhaust ports 172a, 172b are formed through the liners 120 that connect the exhaust plenum 170 to the processing volume sections 124, 126.

[0017]

[0025] The first and second processing chambers 101a, 101b share a gas panel 108 and a vacuum pump 110. The gas panel 108 may be two individual gas panels or one shared gas panel. When the shared gas panel 108 is utilized, gas is provided to both the first and second processing chambers 101a, 101b by the same gas panel 108. The gas panel 108 provides process gas to the first and second processing volumes 124, 126 through a conduit 123 and first and second gas injection passages 182a, 182b. The gas panel 108 distributes gas evenly between the first processing volume 124 and the second processing volume 126. The gas panel 108 is connected to the conduit 123. The conduit 123 is divided into two additional conduits 127a, 127b. The conduit 123 can include a splitting controller. The splitting controller is disposed between the conduit 123 and the conduits 127a, 127b. The splitting controller controls the flow of gas to each of the conduits 127a, 127b. In some embodiments, the splitting controller includes a valve or a mass flow controller. The two additional conduits 127a, 127b distribute gas from the conduit 123 to the first and second gas injection passages 182a, 182b, respectively. Restrictors 121a, 121b are disposed within the conduits 127a, 127b. The restrictors 121a, 121b control the flow of process gas through the conduits 127a, 127b. Additionally, the restrictors 121a, 121b can measure the flow of process gas through the conduits 127a, 127b. The restrictors 121a, 121b control the flow of process gas flowing from the gas panel 108 so that the flow of process gas is the same in both of the conduits 127a, 127b and balance the flow of process gas. The restrictors 121a, 121b may be, for example, valves, mass flow controllers, or other restricting devices. The restrictors 121a, 121b can be used in addition to or instead of a precision splitting controller (not shown) connected to the conduit 123. The gas that can be supplied by the gas panel 108 includes process gases such as purge gas, cleaning gas, and deposition gas.

[0018]

[0026] The first and second processing chambers 101a, 101b further include a first individual gas panel 115 and a second individual gas panel 117. The first individual gas panel 115 provides process gas to the first processing volume 124 through the first gas injection passage 182a. The second individual gas panel 117 supplies process gas to the second processing volume 126 through the second gas injection passage 182b. The first and second individual gas panels 115, 117 are utilized when the restrictors 121a, 121b cannot properly balance the flow of process gas from the shared gas panel 108, or when auxiliary gas is used for a specific process. The gases that can be supplied by the first and second individual gas panels 115, 117 include deposition gas and carrier gas.

[0019]

[0027] In some embodiments, both the shared gas panel 108 and the first and second individual gas panels 115, 117 are utilized. In other embodiments, only the shared gas panel 10-eight is utilized. In still other embodiments, both the first and second individual gas panels 115, 117 are utilized. In embodiments where at least some of the process gas is supplied by the shared gas panel 108, the cost of the gas injection system can be reduced.

[0020]

[0028] The first processing chamber 101a is connected to the gas panel 108 via the first gas injection passage 182a. The first gas injection passage 182a is in fluid connection with the first processing volume 124 so as to provide process gas from the gas panel 108 to the first processing volume 124.

[0021]

[0029] The process gas supplied from the gas panel 108 is introduced into the first processing volume section 124 through a first gas injection passage 182a formed in the side wall of the chamber body 130, so that the gas panel 108 becomes a process gas panel. The first gas injection passage 182a is configured to direct the process gas substantially radially inward toward the pedestal assembly 150. Therefore, in some embodiments, the first gas injection passage 182a may be a cross-flow gas injector. The cross-flow gas injector is positioned to direct the process gas toward the entire surface of the substrate 155 and / or the support surface 154. During the film formation process, the support surface 154 is located in a processing position adjacent to and at substantially the same height as the first gas injection passage 182a, so that the process gas can flow substantially along the flow path 205 that crosses the top surface of the substrate 155 and / or the support surface 154. The process gas exits the first processing volume section 124 through a first exhaust port 172a located on the opposite side of the first gas injection passage 182a of the first processing volume section 124. Removal of the process gas through the first exhaust port 172a can be facilitated by a vacuum pump 110.

[0022]

[0030] The gas panel 108 is attached to the second gas injection passage 182b. The second gas injection passage 182b is fluidly connected to the second processing volume section 126 to supply process gas from the gas panel 108 to the second processing volume section 126.

[0023]

[0031] The process gas supplied from the gas panel 108 is introduced into the second processing volume section 126 through a second gas injection passage 182b formed in the side wall of the chamber body 130. The second gas injection passage 182b is configured to guide the process gas in a generally radially inward direction. Therefore, in some embodiments, the second gas injection passage 182b may be a cross-flow gas injector. The cross-flow gas injector is positioned to direct the process gas over the entire surface of the substrate 155 and / or the support surface 154. During the film formation process, the support surface 154 is located in a processing position adjacent to and at approximately the same height as the second gas injection passage 182b, so that the process gas can flow generally along the flow path 205 that crosses the top surface of the substrate 155 and / or the support surface 154. The process gas exits the second processing volume section 126 through a second exhaust port 172b located on the opposite side of the second gas injection passage 172b of the first processing volume section 126. The removal of process gas through the second exhaust port 172b can be facilitated by the vacuum pump 110.

[0024]

[0032] The purge gas supplied from the purge gas source 185 is introduced into the bottom regions 105 of both the first and second processing volume sections 124 and 126 through the first and second purge gas inlets 184a and 184b formed in the side walls of the chamber body 130.

[0025]

[0033] The purge gas source 185 is in fluid communication with conduit 125. Conduit 125 transports purge gas from the purge gas source 185. Conduit 125 is divided into two additional conduits 129a and 129b. Conduits 129a and 129b connect conduit 125 to the first and second gas purge gas inlets 184a and 184b. The purge gas source 185 is in fluid communication with the first and second purge gas inlets 184a and 184b through conduits 125 and 129a and 129b. The first purge gas inlet 184a is in fluid communication with conduit 129a, and the second purge gas inlet 184b is in fluid communication with conduit 129b. The flow of purge gas through conduits 129a and 129b is balanced using first and second purge gas restrictors 119a and 119b. The first and second purge gas restrictors 119a and 119b balance the flow so that the flow rates through conduits 129a and 129b are the same.

[0026]

[0034] The first purge gas inlet 184a is located at a height below the first gas injection passage 182a. If a liner 120 is used, the liner 120 may be located between the first gas injection passage 182a and the first purge gas inlet 184a. In either case, the first purge gas inlet 184a is configured to direct the purge gas generally in a radially inward direction. The first purge gas inlet 184a may also be configured to direct the purge gas upward. During the film formation process, the pedestal assembly 152 is positioned such that the purge gas flows generally along the flow path 210 that crosses the back of the support surface 154. The purge gas exits the bottom region 105 and is exhausted from the processing chamber through the first exhaust port 172a located on the opposite side of the first purge gas inlet 184a in the first processing volume section 101a.

[0027]

[0035] The second purge gas inlet 184b is located at a lower height than the second gas injection passage 182b. If a liner 120 is used, a section of the liner 120 may be located between the second gas injection passage 182b and the second purge gas inlet 184b. In either case, the second purge gas inlet 184b is configured to direct the purge gas generally in a radially inward direction. The second purge gas inlet 184b may be configured to direct the purge gas upward. During the film formation process, the pedestal assembly 152 is positioned such that the purge gas flows generally along the flow path 210 that crosses the back of the support surface 154. The purge gas exits the bottom region 105 and is exhausted from the processing chamber through the second exhaust port 172b located on the opposite side of the second purge gas inlet 184b in the second processing volume section 101b.

[0028]

[0036] The vacuum pump 110 is fluidly connected to the exhaust plenum 170 so that the processing volume sections 124, 126 can be discharged through multiple exhaust ports 172a, 172b and the exhaust plenum 170. The exhaust plenum 170 is connected to a common exhaust conduit 171. The common exhaust conduit 171 is connected to an exhaust outlet pipe 128 that extends through the bottom 134 of the chamber body to the pump conduit 174. The pump conduit 174 is connected to the vacuum pump 110 to facilitate pumping of gas from the common exhaust conduit 171. A common exhaust valve 173 is located on the pump conduit 174 between the common exhaust conduit 171 and the vacuum pump 110. The common exhaust valve 173 can be opened and closed according to the desired pumping operation.

[0029]

[0037] The support surfaces 154 of the pedestal assemblies 150, 152 are located within the processing volume sections 124, 126. The support surfaces 154 are typically the tops of the pedestal assemblies 150, 152 configured to support the substrate during processing. The bottom regions 105 of the chambers 101a, 101b are defined between the bottom of the chamber body 134 and the support surfaces 154 of the pedestal assemblies 150, 152. Each pedestal assembly 150, 152 has a stem portion 156 extending from the bottom surface of each pedestal assembly 150, 152 through the bottom 134 of the chamber body 130. The stem portions 156 are connected to respective motors 164 configured to independently raise, lower, and / or rotate each of the pedestal assemblies 150, 152.

[0030]

[0038] The pedestal bellows ports 160 are formed at the bottom 134 of the chamber body 130. The pedestal bellows ports 160 extend through the bottom 134 of the chamber body 130. Each pedestal bellows port 160 has a diameter larger than the diameter of the stem portion 156 and is circumscribing to each stem portion 156, which extends through the bottom 134 of the chamber body 130. The pedestal bellows ports 160 surround the stem portion 156 in a circumferential direction.

[0031]

[0039] The bellows assemblies 158 are positioned around each pedestal bellows port 160 to prevent vacuum leakage to the outside of the chamber body 130. Each of the bellows assemblies 158 externally seals and encloses a portion of a stem 156 located outside the chamber body 130. The bellows assemblies 158 are connected between the outer surface of the bottom 134 of the chamber body 130 and a base member 180. The base member 180 can accommodate a motor 164 and a portion of the stem 156 coupled to the motor 164.

[0032]

[0040] The bellows assembly 158 may be formed from a metal or metallized material and configured to form a gas flow channel 162. The gas flow channel 162 is defined as a region between the stem portion 156 and the bellows assembly 158. The gas flow channel 162 extends from the pedestal bellows port 160 to the base member 180. Thus, the gas flow channel 162 forms a hollow cylindrical passage between the bellows assembly 158 and the stem portion 156. The gas flow channel 162 is fluidically coupled between the bottom region 105 and the exhaust conduit 178. The exhaust conduit 178 extends from the gas flow channel 162 through the base member 180 to the pump conduit 174. The valve 179 is located on the exhaust conduit 178 between the gas flow channel 162 and the pump conduit 174. When valve 179 is closed, pumping proceeds via the exhaust plenum 170, and when valve 179 is open, pumping may proceed via the pedestal bellows port 160. When valve 179 is open, the common exhaust valve 173 may be closed to enhance pumping of the bottom region 105 via the pedestal bellows port 160.

[0033]

[0041] In one embodiment of the pumping process, the bottom regions 105 of each chamber 101a, 101b are pumped via the pedestal bellows port 160. Gases and particles present in the bottom region 105 are moved to the vacuum pump 110 through the pedestal bellows port 160, the gas flow channel 162, and the exhaust conduit 178. In this embodiment, the common exhaust valve 173 is closed and the valve 179 is opened so that the pump is fluidly connected to the bottom region 105. Pumping via the pedestal bellows port 160 is performed during the chamber cleaning process, for example, when the chamber is idle and not processing substrates. During the pedestal bellows pumping process, an inert gas may be supplied to the chambers 101a, 101b. For example, argon may be supplied to both chambers 101a, 101b from one of the gas panels 108 for each chamber 101a, 101b or from one of the purge gas sources 185. Argon supplied via the gas panel 108 or the purge gas source 185 is thought to enable more efficient cleaning and pumping of the bottom region 105.

[0034]

[0042] In one embodiment, the gas source 168 is fluidically coupled to each of the bottom regions 105 via a gas flow channel 162 and a pedestal bellows port 160. The gas source 168 may be configured to deliver an inert gas or a cleaning gas to the bottom region 105. Although shown in the schematic diagram as being physically close to the system 100, the gas source 168 is typically a remote gas source located at a distance from the system 100. The gas source 168 is connected to a conduit 176 extending from the gas source 168 through a base member 180. The conduit 176 is fluidly coupled to the gas flow channel 162. A valve 177 is located on the conduit 176 between the gas source 168 and the base member 180.

[0035]

[0043] In one embodiment, an inert gas or purge gas is supplied to the bottom region 105. During operation, the purge gas is supplied from a gas source 168 to the bottom region 105 along a flow path through a conduit 176, a gas flow channel 162, and a pedestal bellows port 160 with the valve 177 open. The purge gas is supplied from the gas source 168 while the substrate is being processed in chambers 101a and 101b. Suitable purge gases include inert gases such as helium, neon, and argon. However, other non-reactive gases can also be used.

[0036]

[0044] By circulating a purge gas during substrate processing, it is believed that particles and contaminants are prevented from entering beneath the support surface 154 and accumulating on the surfaces of chambers 101a and 101b that define the bottom region 105. During purging via the pedestal bellows port 160, pumping of chambers 101a and 101b proceeds via the exhaust plenum 170 and vacuum pump 110. Multiple exhaust ports 172 and at least a portion of the exhaust plenum 170 are substantially coplanar with the support surface 154. Pumping via the exhaust plenum 170 draws the purge gas from the bottom region 105. In this embodiment, the purge gas and contaminants are exhausted from chambers 101a and 101b without contaminants entering beneath the support surface 154. However, pumping and purging through the bellows assembly 158 may be omitted. In such embodiments, the corresponding hardware for pumping and purging through the bellows assembly 158 may also be omitted.

[0037]

[0045] System 100 also includes an equalization port 140 that is positioned through the central wall 132 of the system. The central wall 132 divides the chambers 101a and 101b and defines at least a portion of the bottom region 105. The equalization port 140 includes a first opening 140a that is fluidly connected to the bottom region 105 of the first processing chamber 101a. The equalization port 140 further includes a second opening 140b that is fluidly connected to the bottom region 105 of the second processing chamber 101b. Each of the first opening 140a and the second opening 140b is positioned on either side of the equalization port 140 and is fluidly connected to one another. The equalization port 140 may be formed in the central wall 132 or through a region of the chamber body 130 that defines the bottom region 105. The equalization port 140 is positioned below the support surface 154 and the exhaust plenum 170. The equalization ports 140 extend from the bottom regions 105 of each chamber 101a, 101b through the central wall 132, allowing the bottom regions 105 of each chamber 101a, 101b to be fluidly connected to each other.

[0038]

[0046] Conduit 144 extends from the equalization port 140 through the central wall 132 and exits the bottom 134 of the chamber body 130 at the outlet port 142. Conduit 144 fluidly connects the equalization port 140 to the exhaust conduit 178. Valve 143 is located on conduit 144 between the outlet port 142 and the exhaust conduit 178. Thus, when valve 143 is open, the bottom region 105 is fluidly connected to the vacuum pump 110.

[0039]

[0047] In one embodiment, the bottom region 105 is evacuated by a pumping process of the equalization port 140. The pumping process of the equalization port 140 is performed while the chamber is idle, for example, during an idle cleaning process. To enable pumping through the equalization port 140, the exhaust valve 173 is closed and the valve 143 is opened. In this way, the vacuum pump 110 is fluidly connected to the bottom region 105 via the conduit 144 and the equalization port 140. As a result of the exhaust valve 173 being closed, the exhaust of chambers 101a and 101b proceeds through the equalization port 140 rather than through the exhaust plenum 170.

[0040]

[0048] During the pumping process of the equalization port 140, the vacuum pump 110 discharges gas and contaminants from the bottom region 105 through the equalization port 140 and conduit 144. Additionally, during the pumping process of the equalization port 140, an inert gas may be supplied to the chambers 101a and 101b. For example, argon is supplied to both chambers 101a and 101b from the gas panel 108. The argon supplied via the gas panel 108 is thought to enable more efficient cleaning and pumping of the bottom region 105. Pumping through the equalization port 140 removes undesirable contaminants from the bottom region 105 without utilizing the exhaust plenum 170, which improves the functionality of the system 100.

[0041]

[0049] In addition, the equalization port 140 equalizes the pressure between chambers 101a and 101b during substrate processing. Equalizing the pressure within chambers 101a and 101b allows for more consistent deposition results between substrates processed within each chamber.

[0042]

[0050] In one embodiment, the gas source 148 is fluidly coupled to the bottom region 105 via a conduit 144 and an equalization port 140. The gas source 148 may be configured to deliver an inert gas or a cleaning gas to the bottom region 105. Although schematically shown as being physically close to the system 100, the gas source 148 is generally a remote gas source located at a distance from the system 100. The gas source 148 is connected to a conduit 146 extending from the gas source 148 to the conduit 144. A valve 145 is located on the conduit 146 between the gas source 148 and the conduit 144.

[0043]

[0051] In one embodiment, an inert gas or purge gas is supplied to the bottom region 105. During operation, the purge gas is supplied to the bottom region 105 along a flow path from the gas source 148, through conduit 146, conduit 144, and equalization port 140 with valve 145 open. The purge gas is supplied from the gas source 148 during the idle cleaning process. Suitable purge gases include inert gases such as helium, neon, and argon. However, other non-reactive gases can also be used.

[0044]

[0052] The opening 136 is formed through the first and second processing chambers 101a and 101b, respectively. The opening 136 can be used to transfer substrates into and out of the first and second processing volume sections 124 and 126. In some embodiments, the opening 136 is a slit valve. In other embodiments, the opening 136 can be connected to any suitable valve that allows the passage of the substrate 155.

[0045]

[0053] In one embodiment, each of the first and second processing chambers 101a, 101b may include one or more temperature sensors 201, such as optical pyrometers, for measuring the temperature inside the first and second processing chambers 101a, 101b and on the surface of the substrate 155. One or more temperature sensors 201 are located in the first and second lids 104a, 104b. One or more high-energy radiation source assemblies 202, such as focused high-energy radiation source assemblies, such as laser source assemblies, may be located in the first and second lids 104a, 104b. One or more high-energy radiation source assemblies 202 can generate one or more high-energy radiation beams to perform localized heating of the substrate 155. One or more high-energy radiation source assemblies 202 may be one or more spot heater assemblies.

[0046]

[0054] Figure 2 is a plan view of the chamber body 130 of the processing system shown in Figure 1. The chamber body 130 includes two body sections 415a and 415b, two interface surfaces 308, two inlet sections 310, an upper ring assembly 320, a lower ring assembly 318, and first and second exhaust ports 172a and 172b. The chamber body 130 encloses both the first and second processing chambers 101a and 101b.

[0047]

[0055] The first processing chamber 101a and the second processing chamber 101b (shown in Figure 1) each form a first half 326 and a second half 328 of the chamber body 130. The first half 326 of the chamber body 130 defines the first main body area 415a. The second half 328 of the chamber body 130 defines the second main body area 415b. The first and second halves 326 and 328 of the chamber body 130 are arranged on either side of the central plane 103. The central plane 103 divides the chamber body 130 in two such that the first half 326 of the chamber body 130 is a mirror image of the second half 328 of the chamber body 130.

[0048]

[0056] The upper ring assembly 320 is the upper portion of the chamber body 130. The upper ring assembly 320 at least partially encloses the first processing volume section 124 and the second processing volume section 126. The upper ring assembly 320 may be a continuum having a single piece, or it may be multiple components fastened together. In embodiments where the upper ring assembly 320 is a continuum, the upper ring assembly 320 is described as a monolithic upper assembly. By utilizing a monolithic assembly for the upper ring assembly 320, the first and second processing chambers 101a, 101b are ensured to be positioned in the same vertical position. Furthermore, by using a monolithic upper ring assembly 320, the equalization port 140 ensures that both the first and second processing volume sections 124, 126 are fluidly connected to each other without having to deal with misalignment or seal failure between the first and second body sections 415a, 415b. The upper ring assembly 320 includes an inlet area 310, a gas passage 312, a first cavity 235, a second cavity 240, a first cavity wall 302, and a second cavity wall 303. The first cavity wall 302 of the first cavity 235 is the outer wall of the first cavity 235. The second cavity wall 303 of the second cavity 240 is the outer wall of the second cavity 240.

[0049]

[0057] Each of the first half 326 and the second half 328 includes an interface surface 308. The interface surface 308 includes an opening 136 used for transferring the substrate 155 to and from the first and second processing chambers 101a, 101b. The interface surface 308 may be connected to another set of processing chambers, a factory interface, or a transfer chamber (not shown). The interface surface 308 is a surface positioned to extend from the first and second processing chambers 101a, 101b.

[0050]

[0058] Each of the first half 326 and the second half 328 further includes an inlet area 310. The inlet area 310 is part of the upper ring assembly 320. The inlet area 310 is the area of ​​the upper ring assembly 320 in which the gas passage 312 is formed. The inlet area 310 may be a continuous portion of the upper ring assembly 320 or it may be separable from the upper ring assembly 320. The inlet area 310 extends outward from the side wall 225 of the upper ring assembly 320. The side wall 225 is part of the outer surface 230 of the upper ring assembly 320.

[0051]

[0059] The gas passage 312 is fluidly connected to the gas panel 108 and the purge gas source 185. The gas passage 312 may consist of multiple individual gas passages 312. Each of the multiple gas passages 312 is used to introduce one or more process gases into the first and second processing volume sections 124, 126 through the first and second injection passages 182a, 182b. In one exemplary embodiment, which can be combined with other embodiments, the gas passage 312 is formed through the inlet areas 310 of the first and second body sections 415a, 415b. The gas passage 312 is fluidly connected to the first injection passage 182a. The first injection passage 182a is fluidly connected to the first processing volume section 124. In this embodiment, there is an additional gas passage 312 formed through the inlet area of ​​the second body section 415b. A gas passage 312 formed by penetrating the inlet area 310 of the second main body area 415b is fluidly connected to a second injection passage 182b. The second injection passage 182b is fluidly connected to a second processing volume section 126. The gas passage 312 may include a plurality of gas passages 312, for example, four or more gas passages 312, five or more gas passages 312, six or more gas passages 312, eight or more gas passages 312, ten or more gas passages 312, or twelve or more gas passages 312.

[0052]

[0060] The lower ring assembly 318 is located below the upper ring assembly 320. The lower ring assembly 318 is the lower portion of the chamber body 130 (shown in Figure 1). The lower ring assembly 318 at least partially encloses the first processing volume section 124 and the second processing volume section 126. The lower ring assembly 318 may be a continuum having a single piece, or it may be a plurality of components fastened together. In embodiments where the lower ring assembly 318 is a continuum, the lower ring assembly 318 may be described as a monolithic lower ring assembly. By utilizing a monolithic lower ring assembly for the lower ring assembly 318, the first and second processing chambers 101a and 101b are ensured to be positioned in the same vertical position. Furthermore, by using a monolithic lower ring assembly 318, the equalization port 140 ensures that both the first and second processing volume sections 124, 126 are fluidly connected to each other without having to deal with misalignment or seal failure between the first and second processing chambers 101a, 101b. The lower ring assembly 318 includes the first and second exhaust ports 172a, 172b, the first cavity 235, the second cavity 240, the first cavity wall 302, and the second cavity wall 303. The first cavity wall 302 of the first cavity 235 is the outer wall of the first cavity 235. The second cavity wall 303 of the second cavity 240 is the outer wall of the second cavity 240. The equalization port 140 is located between the first and second processing chambers 101a, 101b, respectively, through the lower ring assembly 318. Alternatively, the equalization port 140 is located through the upper ring assembly 320.

[0053]

[0061] The first and second exhaust ports 172a, 172b may be positioned on the opposite side of the chamber body 130 (for example, about 180 degrees) as first and second injection passages 182a, 182b to facilitate a cross-flow configuration. The first and second exhaust ports 172a, 172b may be formed within the lower ring assembly 318 and thus positioned vertically below the first and second gas injection passages 182a, 182b. The first exhaust port 172a is positioned opposite the first injection passage 182a, and the second exhaust port 172b is positioned opposite the second injection passage 182b. The positioning of the first exhaust port 172a allows the gas coming from the first injection passage 182a to flow horizontally within the first processing volume section 124. The positioning of the second exhaust port 172b allows the gas coming from the second injection passage 182b to flow horizontally within the second processing volume section 126. The first and second exhaust ports 172a and 172b extend from the first and second cavity walls 302 and 303 to the outer surface 245 of the lower ring assembly 318.

[0054]

[0062] The support groove 304 is located inside the first and second body sections 415a and 415b, respectively, adjacent to the first and second cavity walls 302 and 303. The support groove 304 is a lip extending around the diameter of the first and second cavity walls 302 and 303. The support groove 304 can be molded to receive and support the edges of the first and second upper windows 116a and 116b (shown in Figure 1). The support groove 304 may be a groove that is vertically offset from and lower than the rest of the upper surface 306 of the upper ring assembly 320.

[0055]

[0063] In some embodiments, the chamber body 130 is separated into a first side 322 and a second side 324. The first side 322 and the second side 324 are on opposite sides of a reference plane 107. The reference plane is the longitudinal axis of the chamber body 130. The reference plane 107 is perpendicular to the central plane 103. The reference plane 107 divides the chamber body 130 such that the first side 322 of the chamber body 130 is on one side of the reference plane 107, and the second side 324 of the chamber body 130 is on the opposite side of the reference plane 107 from the first side 322. The first body area 415a is the first side 322 of the chamber body 130, and the second body area 415b is the second side 324 of the chamber body 130. In one exemplary embodiment, the interface surface 308, the inlet area 310, and the gas passage 312 are all located on the first side 322, while the first and second exhaust ports 172a and 172b are located on the second side 324. In another embodiment, the interface surface 308 is divided between the first side and the inlet area 310, while the gas passage 312 and the first and second exhaust ports 172a and 172b are divided between the first and second sides 322 and 324.

[0056]

[0064] The first cavity 235 and the second cavity 240 are separated by a minimum distance 381. The minimum distance 381 is the minimum distance between the first cavity wall 302 and the second cavity wall 303. The minimum distance may also be the minimum width of the central wall 132. Depending on the embodiment used, the minimum distance 381 varies so that the central wall 132 has varying thickness. In embodiments where the first and second upper windows 116a, 116b are separated, the minimum distance 381 is greater than zero millimeters, for example, greater than 1 millimeter thickness. In embodiments where the first and second upper windows 116a, 116b are replaced by a single upper window 616 (Figure 6), the minimum distance 381 may be negligible, for example, the minimum distance 381 is 0 millimeters thick, and the central wall 132 has an opening formed through it. In this embodiment, the equalization port 140 does not have to be formed through the central wall 132. In some embodiments, even when the minimum distance 381 is reduced to zero millimeters and the minimum width of the central wall 132 is zero millimeters, the first cavity 235 and the second cavity 240 are still separated by either a gas curtain or an area of ​​the liner 120 positioned between the first cavity 235 and the second cavity 240.

[0057]

[0065] Figure 3 is a side cross-sectional view of a portion of the chamber body 130 shown in Figure 2. The portion of the chamber body 130 shown in Figure 3 is the second half 328 of the chamber body 130. The first half 326 is similar to the second half 328. The second purge gas inlet 184b, the second gas injection passage 182b, the support groove 304, and the opening 136 of the second processing chamber 101b may also represent the first purge gas inlet 184a, the first gas injection passage 182a, the support groove 304, and the opening 136 of the first side and the first processing chamber 101a. The chamber body 130 includes an upper ring assembly 320 and a lower ring assembly 318.

[0058]

[0066] Figure 3 shows the relationship between the first and second gas injection passages 182a, 182b, the first and second purge gas inlets 184a, 184b, and the opening 136. The first and second gas injection passages 182a, 182b and the first and second purge gas inlets 184a, 184b are located in the upper ring assembly 320. The first and second gas injection passages 182a, 182b are located above the first and second purge gas inlets 184a, 184b. In some embodiments, there may be at least four of each of the first and second gas injection passages 182a, 182b, for example, five or more first and second gas injection passages 182a, 182b, for example, six or more first and second gas injection passages 182a, 182b, for example, eight or more first and second gas injection passages 182a, 182b, for example, ten or more first and second gas injection passages 182a, 182b, for example, twelve or more first and second gas injection passages 182a, 182b. In a similar embodiment, there may be at least four of each of the first and second purge gas inlets 184a, 184b, for example five or more of the first and second purge gas inlets 184a, 184b, for example six or more of the first and second purge gas inlets 184a, 184b, for example eight or more of the first and second purge gas inlets 184a, 184b, for example ten or more of the first and second purge gas inlets 184a, 184b, for example twelve or more of each of the first and second purge gas inlets 184a, 184b. The first and second gas injection passages 182a, 182b and the first and second purge gas inlets 184a, 184b are parallel to each other. The first and second gas injection passages 182a, 182b and the first and second purge gas inlets 184a, 184b are spaced apart along the inner walls of the first and second processing chambers 101a, 101b.

[0059]

[0067] The opening 136 is located below the second gas injection passage 182b and the second purge gas inlet 184b. As previously described with reference to Figure 1, the opening 136 is sized and positioned to allow the substrate 155 to pass through. The opening 136 may be closable using a valve. In some embodiments, the opening 136 is located directly below the second gas injection passage 182b and the second purge gas inlet 184b. Alternatively, the opening 136 is located adjacent to the second gas injection passage 182b and the second purge gas inlet 184b, but angularly offset. Embodiments in which the opening 136 may be located in a different position than that shown in Figure 3 are described in Figures 4B-4D and the accompanying description. The support groove 304 is located above the second gas injection passage 182b and the second purge gas inlet 184b. The first and second exhaust ports 172a and 172b are located opposite the first and second gas injection passages 182a and 182b, as shown in Figure 4A. The first and second exhaust ports 172a and 172b include multiple exhaust ports such that each of the first and second exhaust ports 172a and 172b has at least two exhaust ports, for example, three or more exhaust ports, for example, four or more exhaust ports, for example, five or more exhaust ports.

[0060]

[0068] Figure 4A is a plan cross-sectional view of a chamber body 430a, similar to the chamber body 130 in Figure 2 according to the first embodiment described herein. The cross-sectional view of the chamber body 430a shows the relationship between the opening 136, the first and second gas injection passages 182a, 182b, and the first and second exhaust ports 172a, 172b. The chamber body 430a in Figure 4A also includes an equalization port 140.

[0061]

[0069] The gas injection chord length 404 is the chord length from a gas injection passage at one end of the first or second gas injection passages 182a, 182b to a gas injection passage at the opposite end of the first or second gas injection passages 182a, 182b. The gas injection passages used to define the gas injection chord length 404 are the gas injection passages at the extreme ends of the first and second gas injection passages 182a, 182b. The gas injection chord length 404 described herein is less than 500 mm, for example less than 450 mm, for example less than 400 mm. The gas injection chord length 404 is greater than 150 mm, for example greater than 200 mm. The gas injection chord length 404 is configured to allow the flow of process gas across the entire surface of the substrate.

[0062]

[0070] The exhaust port chord length 406 is the chord length from the outer edge of the exhaust port at one end of the first or second exhaust ports 172a, 172b to the edge of the exhaust port at the opposite end of the first or second exhaust ports 172a, 172b. The exhaust ports used to define the exhaust port chord length 406 are the exhaust ports at both extreme ends of the first and second exhaust ports 172a, 172b. The exhaust port chord length 406 is less than 500 mm, for example less than 450 mm, for example less than 400 mm. The exhaust port chord length 406 is greater than 200 mm, for example greater than 150 mm.

[0063]

[0071] The gas injection string length 404 may be the same as the exhaust string length 406. In some embodiments, the gas injection string length 404 may be less than or greater than the exhaust string length 406 by less than about 10 percent, for example, less than about 5 percent smaller or less than 1 percent larger.

[0064]

[0072] In the embodiment shown in Figure 4A, all of the first and second gas injection passages 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned parallel to each other. The opening 136 in the chamber body 430a is positioned parallel to all of the first and second gas injection passages 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b. The opening 136 in the first body section 415a is located directly below the first gas injection passage 182a. The opening 136 in the second body section 415b is located directly below the second gas injection passage 182b.

[0065]

[0073] The equalization port 140 is located between the first main body section 415a and the second main body section 415b. The equalization port 140 connects the first processing volume section 124 and the second processing volume section 126 to each other.

[0066]

[0074] The process gas flow path 408 crosses the first processing volume section 124 and proceeds from the first gas injection passage 182a or the first purge gas inlet 184a (shown in Figure 1) to the first exhaust port 172a. The process gas flow path 408 also crosses the second processing volume section 126 and proceeds from the second gas injection passage 182b or the second purge gas inlet 184b (shown in Figure 1) to the second exhaust port 172b. Although shown as a curve in Figure 4A, the process gas flow path 408 is preferably straight and flows across the substrate 155 inside the first and second processing volume sections 124 and 126, respectively.

[0067]

[0075] Each of the first and second gas injection passages 182a, 182b and the first and second exhaust ports 172a, 172b is divided into two by a first flow surface 410a. One of the first flow surfaces 410a extends through both the first body section 415a and the second body section 415b. The first flow surface 410a is parallel to the flow of process gas from the first and second gas injection passages 182a, 182b to the first and second exhaust ports 172a, 172b. The first flow surface 410a is perpendicular to the reference plane 107 (for example, perpendicular to the longitudinal axis of the chamber body 430), and thus forms a 90-degree angle α between the first flow surface 410a and the reference plane 107. However, the angle α may deviate from 90 degrees, such that the first flow surface 410a and the reference plane 107 are not perpendicular. In some exemplary embodiments, the angle α is approximately 80 to 100 degrees, for example, approximately 85 to 95 degrees.

[0068]

[0076] The embodiment in Figure 4A allows for the use of a shared gas panel, such as gas panel 108, and a shared exhaust section, such as a common exhaust conduit 171 (see Figure 1). The use of a shared gas panel and a shared exhaust section reduces the cost of the system while still allowing for high precision in the flow of heating and process gases within the first and second processing volume sections 124, 126. The orientation of the first and second gas injection passages 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b provides space for the use of a shared gas panel and a shared exhaust panel.

[0069]

[0077] Figure 4B is a plan cross-sectional view of a chamber body 430b that can replace the chamber body 130 of Figure 2, according to a second embodiment described herein. In the second embodiment described in Figure 4B, the first and second gas injection passages 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned parallel to the reference plane 107. A cross-sectional view of the chamber body 430b shows the relationship between the opening 136, the first and second gas injection passages 182a, 182b, and the first and second exhaust ports 172a, 172b. The chamber body 430b in Figure 4A also includes an equalization port 140.

[0070]

[0078] In the exemplary embodiment shown in Figure 4B, the first and second gas injection passages 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are all arranged parallel and aligned to each other (for example, parallel to the longitudinal axis of the chamber body 430). The openings 136 of both the first and second body sections 415a, 415b are positioned perpendicular to the first and second gas injection passages 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b. The opening 136 of the first processing chamber 101a is located between the position of the first gas injection passage 182a and the position of the first exhaust port 172a. The opening 136 of the second processing chamber 101b is located between the position of the second gas injection passage 182b and the position of the second exhaust port 172b.

[0071]

[0079] The equalization port 140 is located between the first main body section 415a and the second main body section 415b. In the embodiment shown in Figure 4B, the equalization port 140 is aligned with the first and second gas injection passages 182a and 182b. The equalization port 140 is located below the first and second gas injection passages 182a and 182b and connects the first processing volume section 124 and the second processing volume section 126 to each other.

[0072]

[0080] The gas injection chord length 404 and exhaust chord length 406 in Figure 4B are defined in the same way as the gas injection chord length 404 and exhaust chord length 406 in Figure 4A. The process gas flow path 408 in Figure 4B is also defined in the same way as the process gas flow path 408 in Figure 4A. In the embodiment disclosed in Figure 4B, the process gas flow path 408 bypasses the central wall 132 of the chamber body 430 and moves toward the outer edge of the chamber body 430. The process gas flow from the first gas injection passage 182a flows toward the first exhaust port 172a, and the process gas flow from the second gas injection passage 182b flows toward the second exhaust port 172b.

[0073]

[0081] Similar to Figure 4A, both the first and second gas injection passages 182a, 182b and the first and second exhaust ports 172a, 172b are divided into two by a second flow surface 410b. The second flow surface 410b extends through the first body section 415a and the second body section 415b. In the embodiment of Figure 4B, the second flow surface 410b is either coplanar or forms a single plane through the chamber body 430. The second flow surface 410b is parallel to the flow of process gas from the first and second gas injection passages 182a, 182b to the first and second exhaust ports 172a, 172b. In the embodiment of Figure 4B, the second flow surface 410b is parallel to the reference plane 107. The second flow surface 410b and the reference plane 107 form an angle α. In the embodiment described in Figure 4B, the angle α is approximately 0 degrees. In some exemplary embodiments, the angle α is off from 0 degrees, ranging from about -10 degrees to about 10 degrees, for example, from about -5 degrees to about 5 degrees.

[0074]

[0082] The embodiment in Figure 4B allows for the use of a shared gas panel, such as gas panel 108, and a shared exhaust section, such as a common exhaust conduit 171. The use of a shared gas panel and a shared exhaust section reduces the cost of the system while still allowing for high precision in the flow of heating and process gases within the first and second processing volume sections 124, 126. The shared gas panel 108 is particularly beneficial in the embodiment of Figure 4B because the first gas injection passage 182a and the second gas injection passage 182b are relatively close to each other.

[0075]

[0083] Figure 4C is a plan cross-sectional view of the chamber body 130 of Figure 2 according to a third embodiment described herein. In the third embodiment described herein and in Figure 4C, the chamber body 130 of Figure 2 is replaced by the chamber body 430c of Figure 4C. In the chamber body 430c, the first and second gas injection passages 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned at an acute angle α with respect to the reference plane 107 (e.g., the longitudinal axis of the chamber body 430). A cross-sectional view of the chamber body 430c shows the relationship between the opening 136, the first and second gas injection passages 182a, 182b, and the first and second exhaust ports 172a, 172b. The chamber body 430c in Figure 4C also includes an equalization port 140.

[0076]

[0084] In the exemplary embodiment shown in Figure 4C, the first gas injection passage 182a, the first purge gas inlet 184a, and the first exhaust port 172a are all arranged parallel and aligned to each other along the third flow surface 410c. The second gas injection passage 182b, the second purge gas inlet 184b, and the second exhaust port 172b are also arranged parallel and aligned to each other along another third flow surface 410c. The openings 136 in both the first and second body sections 415a and 415b are at angles to the first and second gas injection passages 182a and 182b, the first and second purge gas inlets 184a and 184b, and the first and second exhaust ports 172a and 172b. The opening 136 in the first body section 415a is located adjacent to and partially below the first gas injection passage 182a and the first exhaust port 172a. The opening 136 is located only partially below the first gas injection passage 182a and the first purge gas inlet 184a. The opening 136 of the second body section 415b is adjacent to and partially below the second gas injection passage 182b and the second exhaust port 172b. The opening 136 is located only partially below the second gas injection passage 182b and the second purge gas inlet 184b.

[0077]

[0085] The equalization port 140 is located between the first main body section 415a and the second main body section 415b. In the embodiment shown in Figure 4C, the equalization port 140 connects the first processing volume section 124 and the second processing volume section 126 to each other.

[0078]

[0086] The gas injection chord length 404 and exhaust chord length 406 in Figure 4C are defined in the same way as the gas injection chord length 404 and exhaust chord length 406 in Figures 4A and 4B. The process gas flow path 408 in Figure 4C is also defined in the same way as the process gas flow path 408 in Figures 4A and 4B. In the embodiment disclosed in Figure 4C, the process gas flow path 408 proceeds at an angle to the central plane 103 and the reference plane 107 of the chamber body 430c, and moves toward the outer edge of the chamber body 430c. The process gas flow from the first gas injection passage 182a flows toward the first exhaust port 172a, and the process gas flow from the second gas injection passage 182b flows toward the second exhaust port 172b.

[0079]

[0087] Similar to Figures 4A and 4B, the first and second gas injection passages 182a, 182b and the first and second exhaust ports 172a, 172b are divided into two by a third flow surface 410c. The third flow surface 410c extends through the first body section 415a and the second body section 415b. Each of the third flow surfaces 410c is parallel to the flow of process gas from one of the first or second gas injection passages 182a, 182b to one of the first or second exhaust ports 172a, 172b. In the exemplary embodiment of Figure 4C, each of the third flow surfaces 410c makes an acute angle α with the reference plane 107 when angle α is directed inward toward the central plane 103 (e.g., oriented). Angle α is the angle on the inside of the second flow surface 410c and closer to the opening 136. In the embodiments described in Figure 4C and the accompanying text, angle α is approximately 45 degrees. In some exemplary embodiments, angle α ranges from approximately 10 degrees to approximately 80 degrees, for example, approximately 20 degrees to approximately 70 degrees, for example, approximately 30 degrees to approximately 60 degrees, for example, approximately 35 degrees to approximately 55 degrees, for example, approximately 40 degrees to approximately 50 degrees.

[0080]

[0088] In the embodiment shown in Figure 4C, a shared gas panel, such as gas panel 108, can be more readily utilized to supply process gas to the first and second processing chambers 101a and 101b. The first and second gas injection passages 182a and 182b are close to each other, and therefore shorter gas conduits can be used to transfer process gas from gas panel 108 to the first and second gas injection passages 182a and 182b. Having shorter gas conduits reduces costs, and pressure can be distributed more evenly between the first and second processing chambers 101a and 101b without the need to make the conduit length and back pressure variable (gas flow uniformity can be improved). The exhaust system for the embodiment in Figure 4C may include separate exhaust systems for each of the first processing chamber 101a and the second processing chamber 101b. In some embodiments, a shared exhaust system, such as a common exhaust conduit 171, can also be utilized in this embodiment. The shared gas panel and separate exhaust systems reduce the difficulty in supplying the lamp head and other chamber components.

[0081]

[0089] Figure 4D is a plan cross-sectional view of the chamber body 130 of Figure 2 according to a fourth embodiment described herein. In the fourth embodiment described herein and in Figure 4D, the chamber body 130 is replaced by a chamber body 430c. In the chamber body 430d, the first and second gas injection passages 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned at an obtuse angle α with respect to the reference plane 107 (for example, obtuse with respect to the longitudinal axis of the chamber body 430). A cross-sectional view of the chamber body 430d shows the relationship between the opening 136, the first and second gas injection passages 182a, 182b, and the first and second exhaust ports 172a, 172b. The chamber body 430d in Figure 4A also includes an equalization port 140.

[0082]

[0090] In the exemplary embodiment shown in Figure 4D, the first gas injection passage 182a, the first purge gas inlet 184a, and the first exhaust port 172a are all arranged parallel and aligned to each other along the fourth flow surface 410d. The second gas injection passage 182b, the second purge gas inlet 184b, and the second exhaust port 172b are also arranged parallel and aligned to each other along another fourth flow surface 410d. The openings 136 in both the first and second body sections 415a and 415b are at angles to the first and second gas injection passages 182a and 182b, the first and second purge gas inlets 184a and 184b, and the first and second exhaust ports 172a and 172b. The opening 136 of the first processing chamber 101a is located adjacent to and partially below the first gas injection passage 182a and the first exhaust port 172a. The opening 136 is located only partially below the first gas injection passage 182a and the first purge gas inlet 184a. The opening 136 of the second processing chamber 101b is located adjacent to and partially below the second gas injection passage 182b and the second exhaust port 172b. The opening 136 is located only partially below the second gas injection passage 182b and the second purge gas inlet 184b.

[0083]

[0091] The equalization port 140 is located between the first main body section 415a and the second main body section 415b. In the embodiment shown in Figure 4D, the equalization port 140 connects the first processing volume section 124 and the second processing volume section 126 to each other.

[0084]

[0092] The gas injection chord length 404 and exhaust chord length 406 in Figure 4D are defined in the same way as the gas injection chord length 404 and exhaust chord length 406 in Figures 4A to 4C. The process gas flow path 408 in Figure 4D is also defined in the same way as the process gas flow path 408 in Figures 4A to 4C. In the embodiment disclosed in Figure 4D, the process gas flow path 408 proceeds at an angle to the central plane 103 and the reference plane 107 of the chamber body 430d, and moves toward the central wall 132 of the chamber body 430d. The process gas flow from the first gas injection passage 182a flows toward the first exhaust port 172a, and the process gas flow from the second gas injection passage 182b flows toward the second exhaust port 172b.

[0085]

[0093] Similar to Figures 4A to 4C, each of the first and second gas injection passages 182a, 182b and the first and second exhaust ports 172a, 172b is bisected by a fourth flow surface 410d. One of the fourth flow surfaces 410d extends through each of the first body section 415a and the second body section 415b. The fourth flow surface 410d is parallel to the flow of process gas from the first and second gas injection passages 182a, 182b to the first and second exhaust ports 172a, 172b. In the exemplary embodiment shown in Figure 4D, the fourth flow surface 410d is positioned at an obtuse angle α with respect to the reference plane 107, when the angle is taken as an interior angle toward the central plane 103. Angle α is the angle that lies inside the second flow surface 410b and is closer to the opening 136. In the embodiment shown in Figure 4C, angle α is approximately 135 degrees. In some exemplary embodiments, the angle α is approximately 100 degrees to approximately 170 degrees, for example, approximately 110 degrees to approximately 160 degrees, for example, approximately 120 degrees to approximately 150 degrees, for example, approximately 125 degrees to approximately 145 degrees, for example, approximately 130 degrees to approximately 140 degrees.

[0086]

[0094] In the embodiment shown in Figure 4D, a common exhaust conduit 171 can be more easily used to remove process gas from the first and second processing chambers 101a and 101b. The first and second exhaust ports 172a and 172b are close to each other, and therefore a shorter gas conduit can be used to transfer exhaust gas from the first and second processing volume sections 124 and 126 to the vacuum pump 110. In embodiments where the chamber body 430d is a monolithic body, the first and second exhaust ports 172a and 172b may be combined into a single exhaust section. Having a shorter gas conduit and a single exhaust section reduces chamber costs. The use of a single vacuum pump 110 further reduces equipment costs. The use of a common exhaust conduit 171 simplifies maintenance of the exhaust section, thereby reducing the total downtime of the processing chamber when cleaning the exhaust system.

[0087]

[0095] Figure 5 shows the steps of Method 500 for processing a substrate according to an embodiment described herein. Method 500 utilizes the apparatus described in Figures 1 to 4. Method 500 utilizes one or a combination of a shared gas panel and a common exhaust plenum.

[0088]

[0096] In step 502 of method 500, a process gas is flowed from a shared gas panel, such as gas panel 108. The process gas can be any suitable process gas used in the epitaxial deposition process. The process gas may include a group V precursor gas or a group III precursor gas. In some embodiments, a mixture of different process gases may be used for step 502. In some embodiments, the process gas may include silicon-containing precursors such as silanes, silane halides, or combinations thereof. Silanes include silane (SiH4) and empirically formulated SixH (2x 2) Higher silanes having such properties, for example, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H 10The process gas may include: ) . Halide silanes may include monochlorosilane (MCS), dichlorosilane (DCS), trichlorosilane (TCS), hexachlorodisilane (HCDS), octachlorotrisilane (OCTS), silicon tetrachloride (STC), or combinations thereof. The process gas may alternatively include a germanium-containing precursor. The process gas may further include a precursor gas. The precursor gas may include, for example, phosphorus, boron, arsenic, gallium, or aluminum, depending on the desired conductivity of the deposited epitaxial layer. The process gas may further include an etchant gas. The etchant gas may include, for example, any gas containing halogen molecules, such as hydrogen chloride (HCl), chlorine (Cl), or hydrogen fluoride (HF). The process gas may further include a carrier gas. The carrier gas may include, for example, nitrogen (N2), argon (Ar), helium (He), or hydrogen (H2).

[0089]

[0097] In step 504 of method 500, the process gas flowing from the gas panel 108 is divided, for example, using a multi-channel flow controller. The process gas then flows through the first and second gas injection passages 182a and 182b and enters the first and second processing volume sections 124 and 126. The divided process gas flows at the same flow rate through both the first and second gas injection passages 182a and 182b. Additional equipment elements (not shown), such as flow controllers, valves, and pumps, may be present along the process gas flow path. The additional equipment elements can be positioned between the gas panel 108 and the first and second gas injection passages 182a and 182b. The additional flow control elements can ensure an even distribution of the process gas flow between the first processing volume section 124 and the second processing volume section 126.

[0090]

[0098] In step 506 of method 500, a process gas is flowed over two or more substrates, such as substrate 155. The two or more substrates in step 506 may be two substrates. The process gas may be delivered over each of the substrates from first and second gas injection passages 182a and 182b after step 504. The flow of process gas over the substrates enables the generation of the epitaxial deposition process.

[0091]

[0099] In step 508 of method 500, the process gas is exhausted as exhaust gas through a common exhaust plenum. The common exhaust plenum may be a common exhaust conduit 171 as described herein. Before entering the common exhaust conduit 171, the process gas is exhausted from the first and second processing volume sections 124, 126 through the first and second exhaust ports 172a, 172b. After entering the common exhaust conduit 171, the exhaust gas is removed by a vacuum pump 110 through an exhaust outlet pipe 128.

[0092]

[0100] Figure 6 is a top view of a single upper window assembly 600 positioned above the chamber bodies 130 of both the first processing chamber 101a and the second processing chamber 101b in Figure 103. The single upper window assembly 600 includes a single upper window 616 and the chamber body 130. The single upper window 616 includes two inner windows 612a, 612b. The two inner windows 612a, 612b are the first inner window 612a positioned above the first processing volume section 124 as shown in Figure 1, and the second inner window 612b positioned above the second processing volume section 126 as shown in Figure 1. An outer window support 614 is positioned around the first and second inner windows 612a, 612b and supports the single upper window assembly 600 along support grooves similar to support grooves 304.

[0093]

[0101] In embodiments where a single upper window assembly 600 is used, a portion of the single upper window 616 is positioned above the center of the central wall 132. The support groove 304 of the single upper window 616 is shaped like two overlapping ellipses or circles so that the single upper window 616 has an outline similar to that of an infinity symbol, the number 8, or a lemniscate. The upper window assembly 600 may be used in embodiments shown in Figures 1 to 3 and Figures 4A to 4D.

[0094]

[0102] Although only two processing chambers having a shared gas panel and exhaust system have been described, embodiments disclosed herein can be additionally scaled to include additional processing chambers. In some embodiments, there may be four processing chambers arranged adjacent to one another and having a shared chamber body such as chamber body 130.

[0095]

[0103] While the foregoing applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the claims.

Claims

1. An epitaxial deposition system for substrate processing, A first epitaxial processing chamber having a first processing volume defined inside, wherein a first substrate support is disposed in the first processing volume and is configured to support a first substrate, A second epitaxial processing chamber having a second processing volume defined inside, wherein a second substrate support is disposed in the second processing volume and is configured to support a second substrate, A first shared conduit for connecting to an epitaxial deposit gas source, which is fluidly connected to both the first processing volume section and the second processing volume section, A second shared conduit for connecting to a process gas source is fluidly connected to both the first processing volume section and the second processing volume section, Equipped with, The second shared conduit branches into a first conduit and a second conduit, the first conduit is fluidly connected to the first processing volume section, and the second conduit is fluidly connected to the second processing volume section. The first conduit is equipped with a first purge gas restrictor, and the second conduit is equipped with a second purge gas restrictor, and the first purge gas restrictor and the second purge gas restrictor balance the flow of process gas such that the flow of process gas from the process gas source through the first conduit and the second conduit is the same. An epitaxial deposition system configured to transfer a first epitaxial process gas from an epitaxial deposition gas source to a first processing volume section and a second processing volume section through a first shared conduit.

2. The epitaxial deposition system according to claim 1, wherein the first shared conduit branches into a third conduit and a fourth conduit, the third conduit is fluidly connected to the first processing volume section, and the fourth conduit is fluidly connected to the second processing volume section.

3. The epitaxial deposition system according to claim 2, further comprising a splitting controller positioned between the first shared conduit and the third and fourth conduits.

4. The epitaxial deposition system according to claim 1, wherein the first epitaxial processing chamber and the second epitaxial processing chamber share a vacuum pump.

5. The epitaxial deposition system according to claim 1, further comprising a shared exhaust section fluidly connected to both the first processing volume section and the second processing volume section.

6. The epitaxial deposition system according to claim 1, wherein the epitaxial deposition gas source comprises a process gas selected from a group V precursor gas or a group III precursor.

7. The epitaxial deposition system according to claim 1, wherein the epitaxial deposition gas source includes a process gas selected from silane, silane halogen, or a combination thereof.

8. The epitaxial deposition system according to claim 1, wherein the epitaxial deposition gas source comprises a process gas selected from dichlorosilane (DCS), trichlorosilane (TCS), or a combination thereof.

9. The epitaxial deposition system according to claim 1, wherein the epitaxial deposition gas source supplies a precursor gas containing phosphorus, boron, arsenic, gallium, or aluminum.

10. The system further comprises a first gas injection passage that is in fluid communication with the first processing volume section and the first shared conduit, wherein the first gas injection passage supplies the first epitaxial process gas from the epitaxial deposition gas source to the first processing volume section. The epitaxial deposition system according to claim 1, further comprising a second gas injection passage that is in fluid communication with the second processing volume section and the first shared conduit, wherein the second gas injection passage supplies the first epitaxial process gas from the epitaxial deposition gas source to the second processing volume section.

11. A method for epitaxial deposition, The process includes performing an epitaxial deposition process on a first substrate placed on a first substrate support in a first processing volume section of a first epitaxial processing chamber, and on a second substrate placed on a second substrate support in a second processing volume section of a second epitaxial processing chamber. The first epitaxial processing chamber and the second epitaxial processing chamber are included in the epitaxial deposition system, and the epitaxial deposition process is The first process gas is flowed from the first process gas source to the first and second processing volume sections via a first shared conduit that fluidly connects the first process gas source to both the first and second processing volume sections, The second process gas is flowed from the second process gas source to the first and second processing volume sections via a second shared conduit that fluidly connects the second process gas source to both the first and second processing volume sections, Forming epitaxial layers on the first substrate and the second substrate Includes, The second shared conduit branches into a first conduit and a second conduit, the first conduit is fluidly connected to the first processing volume section, and the second conduit is fluidly connected to the second processing volume section. A method comprising: a first conduit comprising a first purge gas restrictor; a second conduit comprising a second purge gas restrictor; and the first purge gas restrictor and the second purge gas restrictor balancing the flow of the second process gas such that the flow of the second process gas from the second process gas source through the first conduit and the second conduit is identical.

12. The method according to claim 11, further comprising exhausting the first process gas and the second process gas through a common exhaust conduit, wherein the common exhaust conduit is in fluid communication with the first processing volume section via the first exhaust conduit and in fluid communication with the second processing volume section via the second exhaust conduit.

13. The method according to claim 11, wherein the first process gas or the second process gas includes a group V precursor gas or a group III precursor gas.

14. The method according to claim 11, wherein the first process gas or the second process gas is selected from silanes, halogenated silanes, or a combination thereof.

15. The method according to claim 11, wherein the first process gas or the second process gas includes a germanium-containing precursor gas.

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