Substrate processing equipment

Abstract

To quickly export a substrate after processing.SOLUTION: A substrate processing apparatus comprises a processing container, a stage, an exhaust port, a driving part, a clamp ring, and a pressure regulator mechanism. The stage is provided in the processing container, and the substrate is mounted thereon. The exhaust port is arranged around the stage along an inner side wall of the processing container. The driving part lifts the stage between a processing position that is a position when the processing is performed on the substrate mounted on the stage and an export position that is a position that is a position lower than the processing position and the position when the substrate is transported onto the stage and when the substrate is exported from the stage. The clamp ring is arranged on a peripheral edge of the substrate on the stage and covers the peripheral edge of the substrate when the stage is at the processing position, and is supported by a shelf part provided on the side wall of the processing container when the stage is at the export position. The pressure regulator mechanism suppresses a pressure difference between a space above the substrate on the stage and a space below the stage.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] Various aspects and embodiments of the present disclosure relate to a substrate processing apparatus.

Background Art

[0002] In a substrate processing apparatus for forming a film on a substrate, when the film-forming gas wraps around to the back surface of the substrate, reaction by-products (so-called deposits) adhere to the back surface of the substrate. When deposits adhere to the back surface of the substrate, when the substrate is transported, the deposits may be peeled off from the substrate and scatter as particles inside the substrate processing apparatus. When particles scatter inside the substrate processing apparatus, the particles may adhere to the substrate and the substrate may be contaminated. Therefore, an annular clamping ring may be provided at the periphery of the substrate so as to cover the periphery of the substrate (see, for example, Patent Document 1 below). Thereby, the intrusion of the film-forming gas to the back surface of the substrate is suppressed.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a substrate processing apparatus capable of quickly unloading a processed substrate.

Means for Solving the Problems

[0005] One aspect of this disclosure is a substrate processing apparatus comprising a processing container, a stage, an exhaust port, a drive unit, a clamping ring, and a pressure adjustment mechanism. The stage is provided inside the processing container and on which a substrate is placed. The exhaust port is arranged around the stage along the inner wall of the processing container. The drive unit raises and lowers the stage between a processing position, which is the position for processing the substrate placed on the stage, and a transport position, which is lower than the processing position and is used when loading the substrate onto the stage and when loading the substrate off the stage. The clamping ring is positioned on the periphery of the substrate on the stage when the stage is in the processing position and covers the periphery of the substrate, and is supported by a shelf provided on the side wall of the processing container when the stage is in the transport position. The pressure adjustment mechanism suppresses the pressure difference between the space above the substrate on the stage and the space below the stage. [Effects of the Invention]

[0006] According to various aspects and embodiments of this disclosure, the processed substrate can be quickly removed. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus in one embodiment of the present disclosure. [Figure 2] Figure 2 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage in the first embodiment. [Figure 3] Figure 3 is a plan view showing an example of the shape and arrangement of through holes formed in the clamp ring in the first embodiment. [Figure 4] Figure 4 is a plan view showing another example of the shape and arrangement of through holes formed in the clamp ring in the first embodiment. [Figure 5] Figure 5 is an enlarged cross-sectional view showing an example of the positional relationship between the stage and the clamping ring when the stage is lowered in the first embodiment. [Figure 6]Figure 6 is an enlarged cross-sectional view showing an example of the positional relationship between the stage and the clamping ring when the stage is lowered in a comparative example. [Figure 7] Figure 7 is an enlarged cross-sectional view showing an example of a damaged substrate in a comparative example. [Figure 8] Figure 8 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage in the second embodiment. [Figure 9] Figure 9 is an enlarged cross-sectional view showing an example of the positional relationship between the protrusion and the through hole when the stage descends in the second embodiment. [Figure 10] Figure 10 is an enlarged cross-sectional view showing an example of the shape of the protrusion and through hole in the second embodiment. [Figure 11] Figure 11 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage in the third embodiment. [Figure 12] Figure 12 is an enlarged cross-sectional view showing an example of the positional relationship between the stage and the clamping ring when the stage is lowered in the third embodiment. [Figure 13] Figure 13 is an enlarged cross-sectional view showing an example of the AA section of Figure 12. [Figure 14] Figure 14 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage in the fourth embodiment. [Figure 15] Figure 15 is a plan view showing an example of the shape and arrangement of grooves formed in the shelf portion in the fourth embodiment. [Figure 16] Figure 16 is an enlarged cross-sectional view showing an example of the positional relationship between the stage and the clamping ring when the stage is lowered in the fourth embodiment. [Figure 17] Figure 17 is an enlarged cross-sectional view showing an example of the positional relationship between the groove and the clamping ring. [Figure 18] Figure 18 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage in the fifth embodiment. [Figure 19] Figure 19 is an enlarged cross-sectional view showing another example of the structure near the periphery of the stage in the fifth embodiment. [Figure 20]Figure 20 is an enlarged cross-sectional view showing yet another example of the structure near the periphery of the stage in the fifth embodiment. [Modes for carrying out the invention]

[0008] The embodiments of the disclosed substrate processing apparatus will be described in detail below with reference to the drawings. However, the disclosed substrate processing apparatus is not limited to the embodiments described below.

[0009] Incidentally, once the processing of the substrate is complete, any remaining processing gas in the space above the substrate is exhausted before the substrate is transported. This causes the pressure in the space above the substrate to become lower than the pressure in the space below the stage supporting the substrate. In this state, when the stage is lowered to transport the substrate, a closed space is formed between the substrate, the clamp ring, and the processing container at the position where the clamp ring is supported by the side wall of the processing container. As a result, the substrate is attracted to the space above it and adheres tightly to the clamp ring. Then, as the stage descends further, the substrate remains attached to the clamp ring as the stage descends.

[0010] Furthermore, if gas leaks from the space below the stage through the gap between the substrate and the clamp ring, and between the clamp ring and the side wall of the processing container, the pressure difference between the space above the substrate and the space below the stage decreases. When the pressure difference between the space above the substrate and the space below the stage falls below a predetermined value, the substrate detaches from the clamp ring and falls onto the stage. This may cause damage to the substrate.

[0011] One possible approach to avoid damaging the substrate is to wait for the stage to descend until the pressure difference between the space above the substrate and the space below the stage falls below a predetermined value; however, this would reduce the throughput of substrate processing.

[0012] Therefore, this disclosure provides a technology that enables rapid removal of processed substrates.

[0013] (First Embodiment) [Configuration of the substrate processing apparatus 10] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus 10 in one embodiment of the present disclosure. The substrate processing apparatus 10 comprises an apparatus body 200 and a control device 100 that controls the apparatus body 200. The apparatus body 200 has a processing container 209. The processing container 209 has a lower container 201, an exhaust duct 202, a support structure 210, and a shower head 230.

[0014] The lower container 201 is made of a metal such as aluminum. The exhaust duct 202 is provided on the upper periphery of the lower container 201. The exhaust duct 202 has a hollow rectangular shape in its longitudinal cross-section and extends in an annular shape along the upper part of the lower container 201. A slit-shaped exhaust port 203 is formed in the exhaust duct 202. An annular insulating member 204 is also positioned above the exhaust duct 202. The shower head 230 is provided above the lower container 201 and is supported by the insulating member 204. A support structure 210 that supports the substrate W is provided approximately in the center of the lower container 201. The space between the support structure 210 and the shower head 230 is called the processing space S. P This is how it is defined.

[0015] An opening 205 is formed in the side wall of the lower container 201 for loading and unloading the substrate W. The opening 205 is opened and closed by a gate valve G.

[0016] One end of the exhaust pipe 206 is connected to the exhaust duct 202. The other end of the exhaust pipe 206 is connected to an exhaust system 208 having a vacuum pump, etc., via a pressure regulating valve 207 such as an APC (Auto Pressure Controller) valve. The pressure regulating valve 207 is controlled by the control device 100, and the processing space S P The internal pressure is controlled to a preset pressure.

[0017] Heaters (not shown) are provided on the side walls of the exhaust duct 202 and the upper surface of the shower head 230, and the exhaust duct 202 and shower head 230 are heated to a temperature of, for example, 200°C or higher. This suppresses the adhesion of reaction by-products (so-called deposits) to the exhaust duct 202 and shower head 230. Heaters may also be provided in the exhaust pipe 206, pressure regulating valve 207, and exhaust device 208, and they may be heated to a temperature that makes it difficult for deposits to adhere.

[0018] The support structure 210 includes a stage 211 and a support portion 212. The stage 211 is made of a metal such as aluminum, and a substrate W is placed on its upper surface. The support portion 212 is made of a metal such as aluminum and is cylindrical in shape, and supports the stage 211 from below.

[0019] A heater 214 is embedded in the stage 211. The heater 214 heats the substrate W placed on the stage 211 according to the power supplied to it. The power supplied to the heater 214 is controlled by the control device 100.

[0020] Furthermore, a flow path 215 through which refrigerant flows is formed within the stage 211. A chiller unit (not shown) is connected to the flow path 215 via pipes 216a and 216b. Refrigerant adjusted to a predetermined temperature by the chiller unit is supplied to the flow path 215 via pipe 216a, and the refrigerant circulating within the flow path 215 is returned to the chiller unit via pipe 216b. The stage 211 is cooled by the refrigerant circulating within the flow path 215. The chiller unit is controlled by a control device 100.

[0021] The support section 212 is positioned inside the lower container 201 so as to penetrate an opening formed in the bottom of the lower container 201. The support section 212 moves up and down by the drive of the lifting mechanism 240. The lifting mechanism 240 is an example of a drive unit. When a substrate W is loaded, the support structure 210 is lowered to the transport position where the substrate W is transported by the drive of the lifting mechanism 240, and the gate valve G is opened. Then, the substrate W is loaded into the lower container 201 by a transport robot (not shown) through the opening 205 and passed onto a lift pin (not shown) protruding from the stage 211. Then, the lift pin (not shown) is lowered, and the substrate W is placed on the stage 211. Then, the gate valve G is closed, and the support structure 210 is raised to the processing position where the substrate W is processed by the drive of the lifting mechanism 240, and the film deposition process on the substrate W is performed. Furthermore, when the substrate W is to be removed, the support structure 210 is lowered by the drive of the lifting mechanism 240 and the gate valve G is opened. Then, the substrate W is lifted off the stage 211 by the rise of a lift pin (not shown). The substrate W on the lift pin (not shown) is then removed from the lower container 201 through the opening 205 by a transport robot (not shown).

[0022] A shower head 230 is provided opposite the stage 211. The shower head 230 has diffusion chambers 231a and 231b. Diffusion chambers 231a and 231b are not connected to each other. A gas supply unit 220 is connected to diffusion chambers 231a and 231b. Specifically, a valve 224a, an MFC (Mass Flow Controller) 223a, a vaporizer 222a, and a raw material supply source 221a are connected to diffusion chamber 231a via piping 225a. The raw material supply source 221a is a supply source of isocyanate, which is an example of a first monomer. The vaporizer 222a vaporizes the liquid isocyanate supplied from the raw material supply source 221a. The MFC 223a controls the flow rate of the isocyanate vapor vaporized by the vaporizer 222a. Valve 224a controls the supply and cessation of isocyanate vapor to piping 225a.

[0023] The diffusion chamber 231b is connected to a valve 224b, an MFC 223b, a vaporizer 222b, and a raw material supply source 221b via piping 225b. The raw material supply source 221b is a source of amine, which is an example of a second monomer. The vaporizer 222b vaporizes the liquid amine supplied from the raw material supply source 221b. The MFC 223b controls the flow rate of the amine vapor vaporized by the vaporizer 222b. The valve 224b controls the supply and cessation of the amine vapor to piping 225b. Isocyanate vapor and amine vapor are examples of process gases.

[0024] Furthermore, the shower head 230 is connected to a valve 224c, an MFC 223c, and a cleaning gas supply source 221c via pipes 225a and 225b. The cleaning gas supply source 221c is a source of cleaning gas containing molecules, for example, oxygen atoms or fluorine atoms. The MFC 223c controls the flow rate of the cleaning gas supplied from the cleaning gas supply source 221c. The valve 224c controls the supply and cessation of cleaning gas to pipes 225a and 225b.

[0025] The diffusion chamber 231a is connected to the processing space S via multiple discharge ports 232a. P It is connected to the processing space S via multiple discharge ports 232b, and the diffusion chamber 231b is connected to the processing space S P It is connected to the following. The gas supplied into the diffusion chamber 231a via piping 225a diffuses within the diffusion chamber 231a and is discharged through the outlet 232a into the processing space S P It is discharged in a shower-like manner inside. In addition, the gas supplied to the diffusion chamber 231b via piping 225b diffuses within the diffusion chamber 231b and is discharged through the outlet 232b into the processing space S P The vapors of isocyanate and amine are discharged in a shower-like manner into the processing space S via outlets 232a and 232b. P After being discharged separately into the processing space S P The polymer is mixed internally and forms an organic film of urea-bonded polymer on the surface of the substrate W placed on the stage 211.

[0026] For example, linear polyureas can be produced by using a diisocyanate as the first monomer and a diamine (e.g., a primary amine) as the second monomer. Examples of diisocyanate and diamine combinations include 4,4'-diphenylmethane diisocyanate (MDI) and 1,12-diaminododecane (DAD). Examples of diisocyanate and diamine combinations include 1,3-bis(isocyanate-methyl)cyclohexane (H6XDI) and 1,12-diaminododecane (DAD). Examples of diisocyanate and diamine combinations include 1,3-bis(isocyanate-methyl)cyclohexane (H6XDI) and 1,3-bis(aminomethyl)cyclohexane (H6XDA). Examples of diisocyanate and diamine combinations include 1,3-bis(isocyanate-methyl)cyclohexane (H6XDI) and hexamethylenediamine (HMDA). Examples of diisocyanate and diamine combinations include m-xylylenediisocyanate (XDI) and m-xylylenediamine (XDA). Examples of diisocyanate and diamine combinations include m-xylylenediisocyanate (XDI) and benzylamine (BA).

[0027] For example, crosslinkable polyureas can be produced by using a diisocyanate as the first monomer and a triamine (e.g., a primary amine) or tetraamine (e.g., a secondary amine) as the second monomer. Alternatively, trimers containing urea bonds can be produced by using a monoisocyanate as the first monomer and a diamine (e.g., a primary amine) as the second monomer. Furthermore, dimers containing urea bonds can be produced by using a monoisocyanate as the first monomer and a monoamine (e.g., a primary amine) as the second monomer.

[0028] The shower head 230 is connected to an RF power supply 260 that supplies RF (Radio Frequency) power for plasma generation via a matcher 261. The shower head 230 functions as a cathode electrode with respect to the stage 211. In the cleaning within the processing container 209, the cleaning gas is supplied from the gas supply unit 220 into the processing space S P through the shower head 230, and the RF power is supplied from the RF power supply 260 into the processing space S P through the matcher 261. Thereby, the cleaning gas is plasmaized within the processing space S P and the cleaning within the processing container 209 is performed by the active species contained in the plasma.

[0029] A lower container 201 below the stage 211 is connected to a valve 224d, an MFC 223d, and a purge gas supply source 221d via a pipe 225d. The purge gas supply source 221d is a supply source of the purge gas. The purge gas is an inert gas such as, for example, nitrogen gas or noble gas. The MFC 223d controls the flow rate of the purge gas supplied from the purge gas supply source 221d. The valve 224d controls the supply and stop of the supply of the purge gas to the pipe 225d. The space within the lower container 201 below the stage 211 is defined as a lower space S L . By supplying the purge gas into the lower space S L , it is possible to suppress the deposition gas supplied into the processing space S P from entering into the lower space S L .

[0030] The control device 100 includes a memory, a processor, and an input / output interface. The memory stores a control program, a processing recipe, and the like. The processor reads out the control program from the memory and executes it, and controls each part of the apparatus main body 200 via the input / output interface based on the recipe and the like stored in the memory.

[0031] [Structure near the periphery of the stage 211] Figure 2 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage 211 in the first embodiment. Figure 2 shows the state when the stage 211 is in the processing position. Above the stage 211, an annular clamp ring 30 is provided around the periphery of the substrate W placed on the stage 211, so as to cover the periphery of the substrate W. When the stage 211 is in the transport position, the clamp ring 30 is supported by a shelf portion 2010 provided on the side wall of the lower container 201. The clamp ring 30 has one or more through holes 300 formed along the thickness direction of the clamp ring 30. The through holes 300 are an example of a pressure adjustment mechanism.

[0032] The clamping ring 30 is supported by the periphery of the substrate W on the stage 211 as the stage 211 rises from the transport position to the processing position, and moves away from the shelf portion 2010 of the lower container 201, for example, as shown in Figure 2. In this state, the film deposition process is performed on the substrate W.

[0033] In the film deposition process, the processing space S P The processing gas supplied inside is exhausted through the space between the lower surface of the shower head 230 and the upper surface of the clamp ring 30 and out of the exhaust port 203. Meanwhile, the lower space S below the stage 211 L The purge gas supplied to the processing space S is exhausted through the space between the lower surface of the clamp ring 30 and the upper surface of the shelf section 2010 and then exhausted from the exhaust port 203. P This prevents the processing gas supplied inside from entering the space between the lower surface of the clamp ring 30 and the upper surface of the shelf section 2010 and entering below the stage 211.

[0034] Note that the lower space S L A portion of the purge gas supplied to the clamp ring 30 also flows upward through the through-hole 300 of the clamp ring 30. This causes the processing space S P This prevents the processing gas supplied inside from entering below the stage 211 through the through-hole 300.

[0035] Here, the through-hole 300 of the clamp ring 30 is located outside the region Rs where the discharge ports 232a and 232b to which the processing gas is supplied are located, in a plan view, as shown in Figure 3, for example. Figure 3 is a plan view showing an example of the shape and arrangement of the through-hole formed in the clamp ring in the first embodiment. In this way, in a plan view, by locating the through-hole 300 outside the region Rs where the discharge ports 232a and 232b are located, the purge gas flowing upward from the clamp ring 30 through the through-hole 300 is directed into the processing space S P This makes it more difficult for something to penetrate the interior. As a result, the processing space S P This prevents the concentration of the processing gas supplied inside from decreasing due to the intrusion of purge gas, thereby preventing an increase in the processing time required for the substrate W.

[0036] In the example shown in Figure 3, four through holes 300 are formed in the clamp ring 30, but the disclosed technology is not limited to this, and the number of through holes 300 formed in the clamp ring 30 may be less than four or more than four. Also, in the example shown in Figure 3, the shape of the opening of the through hole 300 is approximately circular, but the disclosed technology is not limited to this. The shape of the opening of the through hole 300 may be polygonal or oval. Furthermore, as shown in Figure 4, for example, the shape of the opening of the through hole 300' may be elongated along the extending direction of the clamp ring 30.

[0037] When processing on the substrate W is completed, the processing space S P The supply of processing gas into the processing space S is stopped. P The processing gas inside is exhausted through the exhaust port 203. This creates a processing space S P The internal pressure decreases. In this state, when the stage 211 descends to remove the substrate W, the lower surface of the clamp ring 30 comes into contact with the upper surface of the shelf 2010, for example, as shown in Figure 5. This creates a closed space between the substrate W, the clamp ring 30, the shower head 230, the insulating member 204, the exhaust duct 202, and the shelf 2010.

[0038] However, purge gas flows through the through-hole 300 into the closed space formed by the substrate W, clamp ring 30, shower head 230, insulating member 204, exhaust duct 202, and shelf section 2010. This allows the processing space S to flow through it. P Interior and lower space S L The pressure difference between the inside and outside is suppressed. As a result, the substrate W moves downward as the stage 211 descends without being in close contact with the clamp ring 30. This allows the processed substrate W to be quickly removed.

[0039] Now, let's consider the case where the clamp ring 30 does not have a through hole 300. Figure 6 is an enlarged cross-sectional view showing an example of the positional relationship between the stage 211 and the clamp ring 30 when the stage 211 is lowered in a comparative example. When the stage 211 is lowered to unload the processed substrate W, a closed space is formed by the substrate W, the clamp ring 30, the shower head 230, the insulating member 204, the exhaust duct 202, and the shelf section 2010, as shown in Figure 6, for example.

[0040] In the comparative example in Figure 6, since the clamp ring 30 does not have a through hole 300, when the gas in the closed space is exhausted from the exhaust port 203, the processing space S P The internal pressure decreases further. Processing space S P When the pressure inside decreases, the processing space S P and lower space S L Due to the pressure difference, the substrate W moves into the processing space S P The substrate W is attracted to the clamp ring 30 and adheres closely to it. As the stage 211 descends further while the substrate W is in close contact with the clamp ring 30, the substrate W separates from the stage 211. Then, the purge gas leaks from between the substrate W and the clamp ring 30, and from between the clamp ring 30 and the shelf section 2010, and the processing space S P and lower space S L When the pressure difference falls below a predetermined value, the substrate W separates from the clamp ring 30 and falls onto the stage 211. This can cause damage to the substrate W, for example, as shown in Figure 7.

[0041] Therefore, in the comparative example, the processing space S P and lower space S L Damage to the substrate W is avoided by waiting for the stage 211 to descend until the pressure difference falls below a predetermined value. In this case, the throughput in processing the substrate W decreases.

[0042] In contrast, in this embodiment, a through hole 300 is formed in the clamp ring 30. Therefore, even when a closed space is formed by the substrate W, clamp ring 30, shower head 230, insulating member 204, exhaust duct 202, and shelf section 2010 as the stage 211 descends, purge gas flows into the closed space through the through hole 300. This allows the processing space S to be opened. P Interior and lower space S L The pressure difference between the inside and outside is suppressed. As a result, the substrate W does not come into close contact with the clamp ring 30, and the substrate W can be rapidly lowered as the stage 211 descends, allowing the processed substrate W to be quickly unloaded. Therefore, the throughput in processing the substrate W can be improved.

[0043] The first embodiment has been described above. As described above, the substrate processing apparatus 10 in this embodiment comprises a processing container 209, a stage 211, an exhaust port 203, a lifting mechanism 240, a clamping ring 30, and a pressure adjustment mechanism. The stage 211 is provided inside the processing container 209 and on which the substrate W is placed. The exhaust port 203 is arranged around the stage 211 along the inner wall of the processing container 209. The lifting mechanism 240 raises and lowers the stage 211 between a processing position, which is the position when processing the substrate W placed on the stage 211, and a transport position, which is a position lower than the processing position and is used when transporting the substrate W onto the stage 211 and when transporting the substrate W off the stage. The clamping ring 30 is positioned on the periphery of the substrate W on the stage 211 when the stage 211 is in the processing position, covering the periphery of the substrate W, and is supported by a shelf portion 2010 provided on the side wall of the processing container 209 when the stage 211 is in the transport position. The pressure adjustment mechanism is located in the processing space S above the substrate W on the stage 211. PAnd, the lower space S below stage 211 L This suppresses the pressure difference. As a result, the processed substrate W can be quickly removed.

[0044] Furthermore, in the above-described embodiment, the pressure adjustment mechanism is a through-hole 300 formed along the thickness direction of the clamp ring 30. This makes it easy to configure the pressure adjustment mechanism.

[0045] Furthermore, the substrate processing apparatus 10 in the above-described embodiment includes a shower head 230 provided on the upper part of the processing container 209, which supplies processing gas for processing the substrate W on the stage 211 into the processing container 209 from discharge ports 232a and 232b provided on the lower surface. The through-hole 300 is formed in a region outside the region where the discharge ports 232a and 232b are provided in a plan view. As a result, the purge gas flowing above the clamp ring 30 through the through-hole 300 reaches the processing space S P This makes it more difficult for something to penetrate the interior. As a result, the processing space S P This prevents the concentration of the processing gas supplied inside from decreasing due to the intrusion of purge gas, thereby preventing an increase in the processing time required for the substrate W.

[0046] Furthermore, in the above embodiment, the lower space S below the stage 211 L A purge gas is supplied to the lower space S. L This can suppress the adhesion of deposits to components placed on the substrate or the back surface of the substrate W.

[0047] (Second embodiment) In the first embodiment, purge gas flows through the through-hole 300 to the top of the clamp ring 30 even while the substrate W is being processed. In contrast, this embodiment differs from the first embodiment in that the opening of the through-hole 300 is closed when the stage 211 is in the processing position, and the opening of the through-hole 300 is opened when the stage 211 moves below the processing position. The following will focus on the differences from the first embodiment.

[0048] Figure 8 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage 211 in the second embodiment. Figure 8 shows the state when the stage 211 is in the processing position. In this embodiment, for example as shown in Figure 8, a protrusion 2301 is formed on the lower surface of the shower head 230, projecting in the direction toward the clamp ring 30 from the shower head 230. The shower head 230 is an example of the upper part of the processing container 209. The protrusion 2301 is formed at a position corresponding to the through hole 300 of the clamp ring 30. When the stage 211 is in the processing position, for example as shown in Figure 8, the opening of the through hole 300 is blocked by the protrusion 2301. As a result, when the substrate W is processed, the purge gas enters the processing space S through the through hole 300. P This makes it even more difficult for particles to penetrate the substrate. Therefore, it is possible to further prevent the processing time required for substrate W from increasing.

[0049] Furthermore, when processing of the substrate W is completed and the substrate W is removed, the stage 211 descends, causing the protrusion 2301 of the shower head 230 and the opening of the through hole 300 to separate, as shown in Figure 9, for example. This opens the opening of the through hole 300, and the purge gas flows through the through hole 300 to the top of the clamp ring 30. Therefore, even when the stage 211 descends and a closed space is formed by the substrate W, clamp ring 30, shower head 230, insulating member 204, exhaust duct 202, and shelf 2010, the processing space S remains open. P Interior and lower space S L The pressure difference with the inside is suppressed. As a result, the substrate W can be moved downward as the stage 211 descends without the substrate W being in close contact with the clamp ring 30.

[0050] Furthermore, it is preferable that a tapered portion 2301a is formed at the tip of the protrusion 2301 of the shower head 230, for example, as shown in Figure 10. Also, it is preferable that a tapered portion 300a is formed at the opening of the through hole 300, for example, as shown in Figure 10. This allows the protrusion 2301 to close the opening of the through hole 300 even if the positions of the protrusion 2301 and the through hole 300 are slightly misaligned.

[0051] In this embodiment, the opening of the through hole 300 is closed by inserting at least a portion of the protrusion 2301 into the through hole 300, but the disclosed technology is not limited to this. For example, the protrusion 2301 may have a cross-sectional area larger than the area of ​​the opening of the through hole 300. In this case, in a plan view, the protrusion 2301 is positioned so that the area of ​​the opening of the through hole 300 is included within the area of ​​the cross-sectional area of ​​the protrusion 2301. As a result, the opening of the through hole 300 is closed by the protrusion 2301 as it comes into contact with the clamp ring 30.

[0052] The second embodiment has now been described. As described above, in this embodiment, the upper part of the processing container 209 is provided with a protrusion 2301 that protrudes downward from the upper part of the processing container 209. When the stage 211 is in the processing position, the protrusion 2301 is inserted into the device body 200 of the clamp ring 30, thereby closing the opening of the through hole 300. Furthermore, when the stage 211 moves from the processing position to the transport position, the protrusion 2301 moves away from the through hole 300 of the clamp ring 30, thereby opening the opening of the through hole 300. As a result, when the substrate W is processed, the purge gas enters the processing space S through the through hole 300. P This makes it even more difficult for particles to penetrate the substrate, further preventing the processing time required for substrate W from increasing.

[0053] (Third embodiment) In the first embodiment, the purge gas flows upward through the through hole 300 formed in the clamp ring 30, thereby opening the processing space S P Interior and lower space SL The pressure difference with the inside is suppressed. In contrast, in this embodiment, a gap is formed between the shelf portion 2010 of the lower container 201 and the clamp ring 30, and the processing space S is opened through this gap. P Interior and lower space S L This differs from the first embodiment in that the pressure difference with the inside is suppressed. The following explanation will focus on the differences from the first embodiment.

[0054] Figure 11 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage 211 in the third embodiment. Figure 11 shows the state when the stage 211 is in the processing position. In this embodiment, for example as shown in Figure 11, a protrusion 2010a is formed on the upper surface of the shelf 2010, projecting in the direction toward the shower head 230 from the shelf 2010. Three or more protrusions 2010a are formed on the upper surface of the shelf 2010 along the clamp ring 30. When the stage 211 is in the processing position, for example as shown in Figure 11, the clamp ring 30 and the protrusions 2010a are separated. In this embodiment, since no through hole 300 is formed in the clamp ring 30, when the substrate W is processed, the purge gas enters the processing space S P It is difficult for substances to penetrate the interior. Therefore, it is possible to prevent the processing time required for substrate W from becoming excessively long.

[0055] When processing of the substrate W is completed and the substrate W is unloaded, the stage 211 descends, causing the clamp ring 30 to come into contact with the protrusion 2010a, as shown in Figure 12, for example, and the clamp ring 30 is supported by the support structure 2101a. The cross-section AA in Figure 12 becomes, for example, as shown in Figure 13. As shown in Figure 13, the protrusion 2010a forms a gap 40 between the clamp ring 30 and the shelf 2010. The gap 40 formed between the clamp ring 30 and the shelf 2010 by the protrusion 2010a is an example of a pressure adjustment mechanism. This gap 40 allows the lower space S to be adjusted. L The purge gas inside the processing space S P It flows inward. This creates the processing space S P Interior and lower space S LThe pressure difference with the inside is suppressed.

[0056] The third embodiment has been described above. As described above, in this embodiment, a protrusion 2010a is provided on the upper surface of the shelf portion 2010, and when the stage 211 moves from the processing position to the transport position, the clamp ring 30 is supported by the protrusion 2010a, thereby forming a gap 40 between the lower surface of the clamp ring 30 and the upper surface of the shelf portion 2010. As a result, the processing space S P Interior and lower space S L The pressure difference between the inside and outside can be easily suppressed.

[0057] (Fourth embodiment) In the third embodiment, a gap 40 was formed between the clamp ring 30 and the shelf portion 2010 by a protrusion 2010a formed on the shelf portion 2010. In contrast, this embodiment differs from the third embodiment in that a groove is formed in the shelf portion 2010 to create the gap 40 between the clamp ring 30 and the shelf portion 2010. The following explanation will focus on the differences from the third embodiment.

[0058] Figure 14 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage 211 in the fourth embodiment. Figure 14 shows the state when the stage 211 is in the processing position. In this embodiment, a groove 2010b is formed on the upper surface of the shelf portion 2010, for example as shown in Figure 14. The groove 2010b is formed on the upper surface of the shelf portion 2010 so as to extend to the outside of the region Rc of the clamp ring 30 in a plan view, for example as shown in Figure 15.

[0059] When the stage 211 is in the processing position, the clamp ring 30 and the shelf portion 2010 are separated, for example, as shown in Figure 14. In this embodiment, since no through hole 300 is formed in the clamp ring 30, when the substrate W is processed, the purge gas enters the processing space S P It is difficult for substances to penetrate the interior. Therefore, it is possible to prevent the processing time required for substrate W from becoming excessively long.

[0060] When processing of the substrate W is completed and the substrate W is unloaded, the stage 211 descends, causing the clamp ring 30 to come into contact with the shelf 2010, as shown in Figure 16, for example, and the clamp ring 30 is supported by the support structure 2101. The cross-section AA in Figure 16 is as shown in Figure 17, for example. As shown in Figure 17, a gap 40 is formed between the clamp ring 30 and the shelf 2010 by groove 2010b. The gap 40 formed between the clamp ring 30 and the shelf 2010 by groove 2010b is an example of a pressure adjustment mechanism. This gap 40 allows the lower space S L The purge gas inside the processing space S P Flows inward, processing space S P Interior and lower space S L The pressure difference with the inside is suppressed.

[0061] The fourth embodiment has now been described. As described above, in this embodiment, a groove 2010b is formed on the upper surface of the shelf portion 2010 of 2010, extending to the outside of the area of ​​the clamp ring 30 in a plan view. When the stage 211 moves from the processing position to the transport position, a gap 40 is formed between the lower surface of the clamp ring 30 and the groove 2010b of the shelf portion 2010. This creates a gap 40 in the processing space S P Interior and lower space S L The pressure difference between the inside and outside can be easily suppressed.

[0062] (Fifth embodiment) In the fourth embodiment, the lower space S is accessed through the gap 40 formed between the clamp ring 30 and the shelf portion 2010 by the groove 2010b formed in the shelf portion 2010. L The purge gas inside the processing space S P It flows inward. In contrast, in this embodiment, by forming piping within the shelf section 2010, the lower space S is created via the piping. L The purge gas inside is processed in space S P The fourth embodiment differs in that the fluid is routed internally. The following explanation will focus on the differences from the fourth embodiment.

[0063] Figure 18 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage 211 in the fifth embodiment. Figure 18 shows the state when the stage 211 is in the processing position. In this embodiment, for example, as shown in Figure 18, a pipe 2010c is provided within the shelf portion 2010. The pipe 2010c communicates with the space above the shelf portion 2010 and the space below the shelf portion 2010. In a plan view, the pipe 2010c is provided within the shelf portion 2010 such that the opening of the pipe 2010c is located outside the area where the clamp ring 30 is placed. As a result, even when the stage 211 is lowered and the clamp ring 30 is supported by the shelf portion 2010, the pipe 2010c communicates with the lower space S L The purge gas inside is processed in space S P It can be flowed inside. This allows the processing space S P Interior and lower space S L The pressure difference between the inside and outside can be easily suppressed.

[0064] Furthermore, a valve 2010e may be provided in the piping 2010c that communicates the space above the shelf 2010 and the space below the shelf 2010, for example, as shown in Figure 19. The valve 2010e is closed when the stage 211 is in the processing position and opened when the stage 211 moves from the processing position to the transport position. The valve 2010e is controlled by the control device 100. When the valve 2010e is closed when the stage 211 is in the processing position, an excess of purge gas is supplied above the shelf 2010, and a portion of it is directed into the processing space S P This prevents intrusion into the interior. Also, when the substrate W is removed, the valve 2010e is opened, which opens the processing space S P Interior and lower space S L The pressure difference between the inside and outside can be easily suppressed.

[0065] Furthermore, in this embodiment, the piping 2010c communicates with the space above the shelf 2010 and the space below the shelf 2010, but the disclosed technology is not limited to this. In other forms, for example, as shown in Figure 20, the piping 2010c may communicate with the space below the shelf 2010 and the exhaust pipe 206. In this case, the piping 2010c is provided with a valve 2010e that is closed when the stage 211 is in the processing position and opened when the stage 211 moves from the processing position to the transport position. Even with such a configuration, when the substrate W is unloaded, the processing space S P Interior and lower space S L The pressure difference between the inside and outside can be easily suppressed.

[0066] [others] Furthermore, the technology disclosed in this application is not limited to the embodiments described above, and numerous modifications are possible within the scope of its essence.

[0067] For example, in the third and fourth embodiments described above, a gap 40 is formed between the clamp ring 30 and the shelf portion 2010 by providing a protrusion 2010a or a groove 2010b on the upper surface of the shelf portion 2010. However, the disclosed technology is not limited thereto, and the gap 40 between the clamp ring 30 and the shelf portion 2010 may be formed by other methods. For example, in another embodiment, a protrusion or groove may be provided on the lower surface of the clamp ring 30 that contacts the upper surface of the shelf portion 2010. Alternatively, a protrusion or groove may be provided on both the lower surface of the clamp ring 30 and the upper surface of the shelf portion 2010. Alternatively, either or both of the lower surface of the clamp ring 30 and the upper surface of the shelf portion 2010 may be roughened.

[0068] Furthermore, in the embodiments described above, an isocyanate was used as the first monomer and an amine as the second monomer to form a polymer film having a urea bond (-NH-CO-NH-) on the surface of the substrate W, but the disclosed technology is not limited thereto. For example, an epoxide may be used as the first monomer and an amine as the second monomer to form a polymer film having a 2-aminoethanol bond (-NH-CH2-CH(OH)-) on the surface of the substrate W. Alternatively, an isocyanate may be used as the first monomer and an alcohol as the second monomer to form a polymer film having a urethane bond (-NH-CO-O-) on the surface of the substrate W. Alternatively, an acyl halide may be used as the first monomer and an amine as the second monomer to form a polymer film having an amide bond (-NH-CO-) on the surface of the substrate W. Alternatively, a carboxylic acid anhydride may be used as the first monomer and an amine as the second monomer to form a polymer film having an imide bond (-CO-N(-)-CO-) on the surface of the substrate W.

[0069] When a polymer film having imide bonds is formed on the surface of the substrate W, for example, pyromellitic dianhydride (PMDA) can be used as the first monomer. Furthermore, when a polymer film having imide bonds is formed on the surface of the substrate W, for example, 4,4'-oxydianiline (44ODA) or hexamethylenediamine (HMDA) can be used as the second monomer.

[0070] Furthermore, although the above-described embodiment used a film deposition apparatus as an example of a substrate processing apparatus 10, the disclosed technology is not limited to this. The disclosed technology can be applied to substrate processing apparatuses equipped with a clamp ring 30, as well as to apparatuses that perform etching, apparatuses that modify the substrate W, and the like.

[0071] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the attached claims. In addition, the embodiments described above can be combined as appropriate, as long as they do not contradict each other structurally.

[0072] Furthermore, the following additional information is disclosed regarding the above embodiments.

[0073] (Note 1) Processing container and A stage is provided inside the processing container on which the substrate is placed, Along the inner wall of the processing container, exhaust ports are arranged around the stage, The stage is raised and lowered between a processing position, which is the position when processing the substrate placed on the stage, and a transport position, which is a position lower than the processing position, and is used when loading the substrate onto the stage and when unloading the substrate from the stage. When the stage is in the processing position, a clamping ring is placed on the periphery of the substrate on the stage and covers the periphery of the substrate; when the stage is in the transport position, a clamping ring is supported on a shelf provided on the side wall of the processing container. A pressure adjustment mechanism that suppresses the pressure difference between the space above the substrate on the stage and the space below the stage. A substrate processing apparatus equipped with the following: (Note 2) The aforementioned pressure adjustment mechanism is The substrate processing apparatus according to Appendix 1, wherein the through hole is formed along the thickness direction of the clamp ring. (Note 3) The processing container is provided with a shower head located at the top of the processing container, which supplies a processing gas for processing the substrate on the stage into the processing container from a discharge port located on the bottom surface. The substrate processing apparatus according to Appendix 2, wherein the through-hole is formed in a region outside the region where the discharge port is provided, in a plan view. (Note 4) The upper part of the processing container is provided with a protrusion that extends downward from the upper part. The aforementioned protrusion is, When the stage is in the processing position, the clamp ring is inserted into the through hole to close the opening of the through hole. The substrate processing apparatus according to Appendix 2 or 3, wherein when the stage moves from the processing position to the transport position, it moves away from the through-hole of the clamp ring, thereby opening the through-hole. (Note 5) The aforementioned pressure adjustment mechanism is The substrate processing apparatus according to Appendix 1, wherein the gap is formed between the clamping ring and the shelf portion. (Note 6) A protrusion is provided on the upper surface of the shelf section. The substrate processing apparatus according to Appendix 5, wherein when the stage moves from the processing position to the transport position, the clamp ring is supported by the protrusion, thereby forming a gap between the lower surface of the clamp ring and the upper surface of the shelf. (Note 7) The substrate processing apparatus according to Appendix 5, wherein a groove is formed on the upper surface of the shelf portion, extending to the outside of the clamp ring area in a plan view, and a gap is formed between the lower surface of the clamp ring and the groove of the shelf portion when the stage moves from the processing position to the transport position. (Note 8) The aforementioned pressure adjustment mechanism is The substrate processing apparatus according to Appendix 1, which is a pipe connecting the space above the substrate on the stage and the space below the stage. (Note 9) The substrate processing apparatus according to Appendix 8, wherein the piping is provided with a valve that is closed when the stage is in the processing position and opened when the stage moves from the processing position to the transport position. (Note 10) A substrate processing apparatus according to any one of the appendices 1 to 8, wherein a purge gas is supplied to the space below the stage. [Explanation of Symbols]

[0074] G Gate Valve Rs area Rc area W board 10 Substrate Processing Equipment 100 Control device 200 Main unit of the device 201 Lower container 2010 Shelf 2010a Convex part 2010b groove 2010c Piping 2010e Valve 202 Exhaust duct 203 Exhaust port 204 Insulating material 205 Opening 206 Exhaust pipe 207 Pressure regulating valve 208 Exhaust System 209 Processing container 210 Support structure 211 Stages 212 Support part 214 Heater 215 channel 216 Piping 220 Gas Supply Department 221a Raw material source 221b Raw material source 221c Cleaning gas supply source 221d Purge gas supply source 222 Vaporizer 223 MFC 224 valves 225 Piping 230 shower head 2301 Convex part 2301a Tapered section 300a tapered section 231 Diffusion Chamber 232 Discharge port 240 Lifting mechanism 260 RF power supply 261 Matching box 30 Clamp Rings 300 through holes 40 gaps

Claims

1. Processing container and A stage is provided inside the processing container on which the substrate is placed, Along the inner wall of the processing container, exhaust ports are arranged around the stage, The stage is raised and lowered between a processing position, which is the position when processing the substrate placed on the stage, and a transport position, which is a position lower than the processing position, and is used when loading the substrate onto the stage and when unloading the substrate from the stage. When the stage is in the processing position, a clamping ring is placed on the periphery of the substrate on the stage and covers the periphery of the substrate; when the stage is in the transport position, a clamping ring is supported on a shelf provided on the side wall of the processing container. A pressure adjustment mechanism that suppresses the pressure difference between the space above the substrate on the stage and the space below the stage. Equipped with, The pressure adjustment mechanism is a through-hole formed along the thickness direction of the clamp ring in a substrate processing apparatus.

2. The processing container is provided with a shower head located at the top of the processing container, which supplies a processing gas for processing the substrate on the stage into the processing container from a discharge port located on the bottom surface. The substrate processing apparatus according to claim 1, wherein the through-hole is formed in a region outside the region where the discharge port is provided, in a plan view.

3. The upper part of the processing container is provided with a protrusion that extends downward from the upper part. The aforementioned protrusion is, When the stage is in the processing position, the clamp ring is inserted into the through hole to close the opening of the through hole. The substrate processing apparatus according to claim 1, wherein when the stage moves from the processing position to the transport position, it moves away from the through hole of the clamp ring, thereby opening the opening of the through hole.

4. The upper part of the processing container is provided with a protrusion that extends downward from the upper part. The aforementioned protrusion is, When the stage is in the processing position, the clamp ring is inserted into the through hole to close the opening of the through hole. The substrate processing apparatus according to claim 2, wherein when the stage moves from the processing position to the transport position, it moves away from the through hole of the clamp ring, thereby opening the through hole.

5. A processing container and A stage is provided inside the processing container on which the substrate is placed, Along the inner wall of the processing container, exhaust ports are arranged around the stage, The stage is raised and lowered between a processing position, which is the position when processing the substrate placed on the stage, and a transport position, which is a position lower than the processing position, and is used when loading the substrate onto the stage and when unloading the substrate from the stage. When the stage is in the processing position, a clamping ring is placed on the periphery of the substrate on the stage and covers the periphery of the substrate; when the stage is in the transport position, a clamping ring is supported on a shelf provided on the side wall of the processing container. A pressure adjustment mechanism that suppresses the pressure difference between the space above the substrate on the stage and the space below the stage. Equipped with, The aforementioned pressure adjustment mechanism is This is the gap formed between the clamping ring and the shelf portion. A protrusion is provided on the upper surface of the shelf section. A substrate processing apparatus in which, when the stage moves from the processing position to the transport position, the clamp ring is supported by the protrusion, thereby forming a gap between the lower surface of the clamp ring and the upper surface of the shelf.

6. A processing container and A stage is provided inside the processing container on which the substrate is placed, Along the inner wall of the processing container, exhaust ports are arranged around the stage, The stage is raised and lowered between a processing position, which is the position when processing the substrate placed on the stage, and a transport position, which is a position lower than the processing position, and is used when loading the substrate onto the stage and when unloading the substrate from the stage. When the stage is in the processing position, a clamping ring is placed on the periphery of the substrate on the stage and covers the periphery of the substrate; when the stage is in the transport position, a clamping ring is supported on a shelf provided on the side wall of the processing container. A pressure adjustment mechanism that suppresses the pressure difference between the space above the substrate on the stage and the space below the stage. Equipped with, The aforementioned pressure adjustment mechanism is This is the gap formed between the clamping ring and the shelf portion. A substrate processing apparatus is provided wherein a groove is formed on the upper surface of the shelf portion, extending to the outside of the clamp ring area in a plan view, and a gap is formed between the lower surface of the clamp ring and the groove of the shelf portion when the stage moves from the processing position to the transport position.

7. A processing container and A stage is provided inside the processing container on which the substrate is placed, Along the inner wall of the processing container, exhaust ports are arranged around the stage, The stage is raised and lowered between a processing position, which is the position when processing the substrate placed on the stage, and a transport position, which is a position lower than the processing position, and is used when loading the substrate onto the stage and when unloading the substrate from the stage. When the stage is in the processing position, a clamping ring is placed on the periphery of the substrate on the stage and covers the periphery of the substrate; when the stage is in the transport position, a clamping ring is supported on a shelf provided on the side wall of the processing container. A pressure adjustment mechanism that suppresses the pressure difference between the space above the substrate on the stage and the space below the stage. Equipped with, The aforementioned pressure adjustment mechanism is A substrate processing apparatus comprising piping that connects the space above the substrate on the stage with the space below the stage.

8. The substrate processing apparatus according to claim 7, wherein the piping is provided with a valve that is closed when the stage is in the processing position and opened when the stage moves from the processing position to the transport position.

9. A substrate processing apparatus according to any one of claims 1 to 8, wherein a purge gas is supplied to the space below the stage.

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