Method for crimping laminates and method for manufacturing ceramic electronic components including the same

Abstract

To provide a method for pressure-joining a laminate capable of preventing a deformation defect during pressurization of a ceramic electronic component, and a method for manufacturing a ceramic electronic component including the same.SOLUTION: A method for pressure-joining a laminate includes: preparing a laminate; pressurizing the laminate from a first pressure section to a second pressure section Pb-Pc; heating the laminate from a first temperature section Ta-Tb to a second temperature section Tc-Td; maintaining pressure-joining of the laminate at the second pressure section and the second temperature section; cooling the laminate from the second temperature section to a third temperature section Te-Tf; and depressurizing the laminate from the second pressure section to a third pressure section, where the temperature in the second temperature section Tc-Td is from 70°C to 150°C.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] This invention relates to a method for crimping laminates and a method for manufacturing ceramic electronic components including the same. [Background technology]

[0002] When manufacturing ceramic electronic components such as multilayer capacitors, multilayer inductors, multilayer alumina substrates, and multilayer varistors, a process is carried out in which ceramic green sheets equipped with conductive patterns are stacked to form a laminate, and then such a laminate is compressed.

[0003] On the other hand, since the crimping process is carried out at high temperature and high pressure, deformation defects may occur due to the nonlinear shrinkage phenomenon of the laminate. In this case, cutting defects may occur due to insufficient margin. [Overview of the project] [Problems that the invention aims to solve]

[0004] One of the several objectives of the present invention is to provide a method for crimping laminates that can improve deformation defects caused by nonlinear shrinkage phenomena, and a method for manufacturing ceramic electronic components including this method. [Means for solving the problem]

[0005] One of the solutions proposed through this invention is to perform the crimping process by first applying pressure at a low temperature, followed by a heating process and a holding process, and then a cooling process and a depressurization process. In this case, the final temperature after heating may be approximately 70°C to 150°C.

[0006] For example, a method for crimping a laminate according to one example includes the steps of preparing the laminate, pressurizing the laminate from a first pressure to a second pressure, heating the laminate from a first temperature to a second temperature, maintaining the crimping of the laminate at the second pressure and second temperature, cooling the laminate from the second temperature to a third temperature, and reducing the pressure of the laminate from the second pressure to a third pressure, wherein the second temperature may be between 70°C and 150°C.

[0007] For example, a method for manufacturing a ceramic electronic component according to one example includes the steps of: forming a ceramic laminate by stacking dielectric sheets on which a conductive pattern is printed; pressing the ceramic laminate together; and cutting the pressed ceramic laminate, wherein the step of pressing the ceramic laminate together includes the steps of: pressurizing the ceramic laminate from a first pressure to a second pressure; heating the ceramic laminate from a first temperature to a second temperature; maintaining the pressing of the ceramic laminate at the second pressure and the second temperature; cooling the ceramic laminate from the second temperature to a third temperature; and depressurizing the ceramic laminate from the second pressure to a third pressure, wherein the second temperature may be 70°C to 150°C. [Effects of the Invention]

[0008] One of the effects of the present invention is to provide a method for crimping laminates that can improve deformation defects caused by nonlinear shrinkage phenomena, and a method for manufacturing ceramic electronic components including this method. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic cross-sectional view showing the lamination process. [Figure 2] This diagram schematically illustrates the nonlinear shrinkage phenomenon caused by the crimping process. [Figure 3] A schematic example of the pressure and temperature profiles for the crimping process is shown. [Figure 4] Another example of the pressure and temperature profiles for the crimping process is schematically shown. [Modes for carrying out the invention]

[0010] The present invention will be described below with reference to the attached drawings. The shapes and sizes of the elements in the drawings may be exaggerated or reduced for clearer explanation.

[0011] Figure 1 is a schematic cross-sectional view showing the crimping process of the laminate, and Figure 2 schematically shows the nonlinear shrinkage phenomenon caused by the crimping process.

[0012] Referring to the drawings, the laminate to be subjected to the crimping process may be, for example, a ceramic laminate 100. The ceramic laminate 100 may be a precursor for ceramic electronic components such as multilayer capacitors, multilayer inductors, multilayer alumina substrates, and multilayer varistors. For example, the ceramic laminate 100 may be a precursor for a multilayer capacitor, in which case the ceramic laminate 100 may include a dielectric layer 101 and internal electrodes 102.

[0013] The ceramic laminate 100 can be formed by a method in which after manufacturing a dielectric sheet, a conductor pattern is printed on the dielectric sheet, and a large number of printed dielectric sheets are laminated. The dielectric sheet can be formed by mixing ceramic powder, a binder, a solvent, etc., then manufacturing a slurry, and uniformly and thinly coating the slurry on a film. A conductor pattern can be formed on the formed ceramic sheet by a method such as screen printing. For example, the conductor pattern can be formed by applying and drying a conductive paste containing at least one of silver (Ag), lead (Pb), platinum (Pt), nickel (Ni), and copper (Cu). The ceramic laminate 100 can be formed by stacking dielectric sheets printed with such a conductor pattern by a desired capacitance. If necessary, a dielectric sheet without a printed conductor pattern can be further laminated at a required position. That is, the ceramic laminate 100 can further include a dielectric sheet without a printed conductor pattern. As an example, the stacked dielectric sheets can constitute a dielectric layer 101, and the conductor pattern can constitute an internal electrode 102.

[0014] The crimping process can be performed by applying pressure to the ceramic laminate 100 using the lower crimping auxiliary material 201 and the upper crimping auxiliary material 202. Also, the crimping process can be performed not only through such a pressurizing process but also through a temperature increase and cooling process. After the crimping process, a non-linear shrinkage phenomenon of the ceramic laminate 100 may occur. In this case, the index region 300, which is the edge of the ceramic laminate 100, may lose its straightness due to deformation. In this case, the central margin M region may be affected. When it is difficult to ensure a sufficient margin M region, cutting defects may occur during the cutting process. For example, there may be a possibility of cutting at a location other than the center of the margin M region during cutting. In this case, a short section may occur in the left / right margin of each chip after cutting, which may correspond to a specification defect.

[0015] After the crimping process, the crimped ceramic laminate 100 can be cut into the required chip size. Thereafter, each crimped and cut ceramic laminate 100 can be fired at a high temperature, for example, at a temperature of about 1200°C to 1300°C to form a ceramic body of chip size. If necessary, such a ceramic body can be put into a cylinder and rotated to perform a polishing process for rounding the angular outer shape. Thereafter, an external electrode can be formed on the ceramic body. The external electrode can be formed, for example, by applying a conductive paste containing a conductive substance such as copper (Cu) on the ceramic body, firing this by heat treatment, and then electroplating nickel (Ni), tin (Sn), etc. step by step.

[0016] Through a series of processes, ceramic electronic components, for example, multilayer capacitors can be manufactured, but this is only an example and the manufacturing method is not limited thereto.

[0017] FIG. 3 schematically shows the pressure and temperature profiles of the crimping process. Referring to the drawing, in an example of the crimping process, first, pressure is applied at a low temperature, heating is performed after the pressure application, a certain time is held after reaching the final temperature, cooling is then performed, and when it becomes low temperature again, pressure reduction is performed. If necessary, cooling may be performed after the pressure reduction.

[0018] For example, in an example of the crimping process, first, the laminate is pressurized from the first pressure range Pa to the second pressure range Pb - Pc in the first temperature range Ta - Tb which is relatively low temperature, the laminate is heated from the first temperature range Ta - Tb to the second temperature range Tc - Td while maintaining such a second pressure range Pb - Pc, then the crimping of the laminate is held for a certain time on the second pressure range Pb - Pc and the second temperature range Tc - Td, thereafter, the laminate is cooled from the second temperature range Tc - Td to the third temperature range Te - Tf in the second pressure range Pb - Pc, and when it becomes the relatively low temperature third temperature range Te - Tf, the laminate can be depressurized from the second pressure range Pb - Pc to the third pressure range Pd. Thereby, the deformation defect of the laminate due to non-linear shrinkage can be effectively improved.

[0019] The temperature in the second temperature range Tc to Td may be above the glass transition temperature of the laminate, for example, if the laminate is the ceramic laminate mentioned above, it may be around 70°C to 150°C or 85°C to 130°C. When the temperature in the second temperature range Tc to Td, which is the temperature at which the crimping is maintained, satisfies this range, deformation defects of the laminate due to nonlinear shrinkage can be more effectively improved without other side effects. From this viewpoint, the temperature in the first temperature range Ta to Tb may be around 25°C to 55°C. Also, the temperature in the third temperature range Te to Tf may be around 25°C to 55°C.

[0020] The pressure in the second pressure zone, Pb to Pc, is 500 kgf / cm². 2 ~1500 kgf / cm² 2 Approximately, or 500 kgf / cm² 2 ~1000 kgf / cm² 2 It is acceptable to have a certain degree of pressure. When the pressure in the second pressure range Pb~Pc, which is the pressure at which the crimping is maintained, satisfies this range, deformation defects of the laminate due to nonlinear shrinkage can be more effectively improved without side effects such as delamination. On the other hand, the pressure in the first pressure range Pa is 0 kgf / cm². 2 ~10 kgf / cm² 2 It is acceptable to have a certain degree of pressure, and the pressure in the third pressure section Pd is 0 kgf / cm². 2 ~10 kgf / cm² 2 It may be a general range, but it is not particularly limited to this as long as it is within a range smaller than the second pressure interval Pb~Pc.

[0021] In the first temperature interval Ta to Tb, the temperatures at two locations Ta and Tb are either identical or approximately similar within the aforementioned temperature range. Similarly, in the second temperature interval Tc to Td, the temperatures at two locations Tc and Td are either identical or approximately similar within the aforementioned temperature range. Furthermore, in the third temperature interval Te to Tf, the temperatures at two locations Te and Tf are either identical or approximately similar within the aforementioned temperature range. Finally, in the second pressure interval Pb to Pc, the pressures at two locations Pb and Pc are either identical or approximately similar within the aforementioned pressure range.

[0022] On the other hand, the holding time during the holding stage is not particularly limited, but is preferably around 10 sec to 1800 sec. When the holding time satisfies the above range, deformation defects of the laminate due to nonlinear shrinkage can be more effectively improved without other side effects.

[0023] Furthermore, during the heating stage, the heating rate is not particularly limited, but is preferably around 1°C / min to 20°C / min. Similarly, during the cooling stage, the cooling rate is not particularly limited, but is preferably around 1°C / min to 20°C / min. When the heating / cooling rates satisfy the above ranges, deformation defects in the laminate due to nonlinear shrinkage can be more effectively improved without other side effects.

[0024] On the other hand, the depressurization rate can be faster than the pressurization rate, which allows for a more effective improvement of deformation defects in the laminate caused by nonlinear shrinkage.

[0025] Figure 4 schematically shows another example of the pressure and temperature profiles for the crimping process. Referring to the drawing, in this other example of the crimping process, primary pressurization is performed at a low temperature, followed by heating, secondary pressurization after reaching the final temperature, followed by holding for a certain period of time, followed by primary depressurization, followed by cooling, and then secondary depressurization when the temperature drops again. If necessary, cooling may be performed after the secondary depressurization.

[0026] For example, in the crimping process according to another example, first, in the first temperature range Ta to Tb which is relatively low in temperature, the laminate is first pressurized once from the first pressure range Pa to the first - 2 pressure range Pa' to Pb', and in such a first - 2 pressure range Pa' to Pb', the laminate is heated from the first temperature range Ta to Tb to the second temperature range Tc to Td. Then, the laminate is pressurized twice from the first - 2 pressure range Pa' to Pb' to the second pressure range Pb to Pc. Then, the crimping of the laminate is maintained for a certain period of time on the second pressure range Pb to Pc and the second temperature range Tc to Td. Then, it is depressurized once from the second pressure range Pb to Pc to the second - 3 pressure range Pc' to Pd'. In such a second - 3 pressure range Pc' to Pd', the laminate is cooled from the second temperature range Tc to Td to the third temperature range Te to Tf. When it reaches the relatively low - temperature third temperature range Te to Tf, it can include depressurizing the laminate from the second - 3 pressure range Pc' to Pd' to the third pressure range Pd. Thereby, the deformation defect of the laminate due to non - linear shrinkage can be effectively improved.

[0027] The temperature of the second temperature range Tc to Td is a temperature above the glass transition temperature of the laminate. For example, when the laminate is the above - mentioned ceramic laminate or the like, it may be about 70°C to 150°C, or about 85°C to 130°C. When the temperature of the second temperature range Tc to Td, which is the temperature at which the crimping is maintained, satisfies this range, the deformation defect of the laminate due to non - linear shrinkage can be more effectively improved without other side effects. From such a viewpoint, the temperature of the first temperature range Ta to Tb may be about 25°C to 55°C. Also, the temperature of the third temperature range Te to Tf may be about 25°C to 55°C.

[0028] The pressure of the second pressure range Pb to Pc is about 500 kgf / cm 2 ~1500 kgf / cm 2 or about 500 kgf / cm 2 ~1000 kgf / cm 2It is acceptable to have a pressure within this range. When the pressure in the second pressure zone Pb~Pc, which is the pressure at which the crimping is maintained, satisfies this range, deformation defects of the laminate due to nonlinear shrinkage can be more effectively improved without side effects such as delamination. From this perspective, the pressure in the first-to-second pressure zone Pa'~Pb' should be 30 kgf / cm². 2 ~500 kgf / cm² 2 The pressure in the second-to-third pressure interval Pc'~Pd' should be 30 kgf / cm². 2 ~500 kgf / cm² 2 It can be to a certain extent.

[0029] On the other hand, the pressure in the first pressure zone Pa is 0 kgf / cm². 2 ~10 kgf / cm² 2 It is acceptable to have a certain degree of pressure, and the pressure in the third pressure section Pd is 0 kgf / cm². 2 ~10 kgf / cm² 2 It may be a general range, but it is not particularly limited to this as long as it is within a range smaller than the second pressure interval Pb~Pc.

[0030] In the first temperature interval Ta to Tb, the temperatures at two locations Ta and Tb are the same or can be approximately similar within the aforementioned temperature range. Similarly, in the second temperature interval Tc to Td, the temperatures at two locations Tc and Td are the same or can be approximately similar within the aforementioned temperature range. Furthermore, in the third temperature interval Te to Tf, the temperatures at two locations Te and Tf are the same or can be approximately similar within the aforementioned temperature range. Also, in the second pressure interval Pb to Pc, the pressures at two locations Pb and Pc are the same or can be approximately similar within the aforementioned pressure range. Furthermore, in the first-to-second pressure interval Pa' to Pb', the pressures at two locations Pa' and Pb' are the same or can be approximately similar within the aforementioned pressure range. Finally, in the second-to-third pressure interval Pc' to Pd', the pressures at two locations Pc' and Pd' are the same or can be approximately similar within the aforementioned pressure range.

[0031] On the other hand, the holding time during the holding stage is not particularly limited, but is preferably around 10 sec to 1800 sec. When the holding time satisfies the above range, deformation defects of the laminate due to nonlinear shrinkage can be more effectively improved without other side effects.

[0032] Furthermore, during the heating stage, the heating rate is not particularly limited, but is preferably around 1°C / min to 20°C / min. Similarly, during the cooling stage, the cooling rate is not particularly limited, but is preferably around 1°C / min to 20°C / min. When the heating / cooling rates satisfy the above ranges, deformation defects in the laminate due to nonlinear shrinkage can be more effectively improved without other side effects.

[0033] Experimental example The effects of the present invention will be explained below through experiments. The ceramic laminate described in Figure 1 was used in the experiments. The ceramic laminate was prepared by stacking 550 layers of dielectric sheets formed from barium titanate-based dielectric material and dielectric sheets on which a conductive paste containing nickel (Ni) was printed. Subsequently, various crimping processes were carried out under the conditions shown in Tables 1 to 8 below, and the shrinkage rate and cutting defects of the laminate after the crimping process are shown below.

[0034] On the other hand, shrinkage rate refers to the rate of change in the length x and width y directions of the ceramic laminate, as shown in Figure 2. In this case, the shrinkage rate (design) refers to the shrinkage rate of the ceramic laminate after crimping relative to the design value when printing the conductive pattern on the dielectric sheet. Furthermore, the shrinkage rate (crimping) refers to the shrinkage rate of the ceramic laminate before and after crimping. These shrinkage rates were calculated by inserting a mark printed on the lower crimping auxiliary material when laminating the ceramic laminate, measuring its coordinates using a two-dimensional measuring instrument, measuring the coordinates again after crimping, and then using the length of each point.

[0035] Furthermore, a cutting defect refers to a deformable cutting defect that occurred during the cutting inspection, which is a post-cutting process inspection. Specifically, it means that the center of the margin in an individual chip after cutting was not cut, leaving a margin below the standard length. Cutting defects were evaluated by visual inspection using a loupe with a magnification of approximately 10 to 22 times.

[0036] [Table 1]

[0037] As shown in [Table 1], Experimental Examples 2-4, which involve heating and / or cooling while maintaining pressure after pressurization, are more effective in improving deformation defects due to nonlinear shrinkage compared to Experimental Example 1, which simply involves pressurization / holding / depressurization under high temperature conditions. Furthermore, Experimental Examples 2-3, which involve at least a heating process while maintaining pressure after pressurization, are even more effective in improving deformation defects due to nonlinear shrinkage compared to Experimental Example 4, which involves only a cooling process while maintaining pressure after pressurization.

[0038] [Table 2]

[0039] As shown in [Table 2], when the entire process of heating / holding / cooling is carried out under pressure after pressurization, it can be seen that when the final temperature after heating is around 70°C to 150°C, as in Experimental Examples 6 to 10, it is more effective in improving deformation defects due to nonlinear shrinkage compared to Experimental Example 4, which falls outside this range. On the other hand, in Experimental Example 11, where the entire process of heating / holding / cooling is carried out under pressure after pressurization, and the final temperature is 180°C, which is outside the 150°C range, a problem occurred in which the chips reattached after the cutting process.

[0040] [Table 3]

[0041] As shown in [Table 3], when the entire process of heating / holding / cooling is carried out under pressure after pressurization, the final pressure after pressurization is 500 kgf / cm², as in Experimental Examples 13-15. 2 ~1500 kgf / cm² 2 In this case, it can be seen that this method is more effective in improving deformation defects due to nonlinear shrinkage phenomena without side effects such as delamination, compared to Experimental Example 12, which simply involves pressurization / holding / depressurization under high-temperature conditions.

[0042] [Table 4]

[0043] As shown in [Table 4], when pressurization and depressurization are performed in two separate steps, for example, through pressurization / heating / pressurization / holding / depressurization / cooling / depressurization, the pressure during heating and cooling is 30 kgf / cm², as in Experimental Examples 16-20. 2 ~500 kgf / cm² 2 In this case, it can be seen that this method is more effective in improving deformation defects due to nonlinear shrinkage compared to Experimental Example 15, which simply involves pressurization / holding / depressurization under high-temperature conditions.

[0044] [Table 5]

[0045] As shown in [Table 5], when the entire process of heating / holding / cooling is carried out under pressure after pressurization, it can be seen that when the heating rate is around 1°C / min to 20°C / min, as in Experimental Examples 22-25, it is more effective in improving deformation defects due to nonlinear shrinkage compared to Experimental Example 21, which simply involves pressurization / holding / depressurization under high temperature conditions.

[0046] [Table 6]

[0047] As shown in [Table 6], when the entire process of heating / holding / cooling is carried out under pressure after pressurization, it can be seen that when the cooling rate is around 1°C / min to 20°C / min, as in Experimental Examples 27-28, it is more effective in improving deformation defects due to nonlinear shrinkage compared to Experimental Example 26, which simply involves pressurization / holding / depressurization under high temperature conditions.

[0048] [Table 7]

[0049] As shown in [Table 7], when the entire process of heating / holding / cooling is carried out under pressure after pressurization, it can be seen that, as in Experimental Examples 30-33, when the holding time is about 10 sec to 1800 sec, it is more effective in improving deformation defects due to nonlinear shrinkage compared to Experimental Example 29, which simply involves pressurization / holding / depressurization under high temperature conditions.

[0050] [Table 8]

[0051] As shown in [Table 8], when the entire process of heating / holding / cooling is carried out under pressure after pressurization, it can be seen that when the starting / completion temperature is around 25°C to 55°C, as in Experimental Examples 35-36, it is more effective in improving deformation defects due to nonlinear shrinkage compared to Experimental Example 34, which simply involves pressurization / holding / depressurization under high temperature conditions.

[0052] In this invention, expressions such as "side" and "side" are used for convenience to mean the left / right direction or the surface in that direction relative to the drawing; expressions such as "upper," "upper part," and "upper surface" are used for convenience to mean the upward direction or the surface in that direction relative to the drawing; and expressions such as "lower," "lower part," and "lower surface" are used for convenience to mean the downward direction or the surface in that direction. Furthermore, "located on the side, upper, upper part, lower part, or lower part" is used as a concept that includes not only cases where the target component is in direct contact with the reference component in that direction, but also cases where it is located in that direction but is not in direct contact. However, this is a definition of direction for the sake of explanation, and the scope of rights in the claims is not particularly limited by such descriptions of direction, and concepts such as upper / lower can be changed at any time.

[0053] In this invention, "connected" is a concept that includes not only direct connection but also indirect connection via an adhesive layer or the like. Furthermore, "electrically connected" is a concept that includes both cases where physically connected and cases where not connected. In addition, expressions such as "first," "second," etc., are used to distinguish one component from another and do not limit the order and / or importance of the components. In some cases, within the scope of the rights, the first component may be named the second component, and similarly, the second component may be named the first component.

[0054] The expression "example" as used in this invention does not mean that each embodiment is identical to another, but is provided to highlight and illustrate different unique features. However, the examples presented above do not preclude their implementation in combination with features of other examples. For example, even if a matter described in one particular example is not described in another example, it can be understood as relating to the other example unless there is a contradictory or contrary explanation of that matter in the other example.

[0055] The terms used in this invention are for illustrative purposes only and are not intended to limit the invention. In this context, singular expressions include plural expressions unless they clearly have a different meaning.

Claims

1. The stage of preparing the laminate, The steps include pressurizing the laminate from a first pressure to a second pressure, The steps include heating the laminate from a first temperature to a second temperature, A step of maintaining the compression of the laminate at the second pressure and the second temperature, The steps include cooling the laminate from the second temperature to the third temperature, The step of reducing the pressure of the laminate from the second pressure to the third pressure, The second temperature is 70°C to 150°C. A method for bonding laminates, wherein the heating step is performed after the pressurizing step, and / or the cooling step is performed before the depressurizing step.

2. The first pressure is 0 kgf / cm². ２ ~10 kgf / cm² ２ And, The second pressure is 500 kgf / cm². ２ ~1500kgf / cm ２ And, The third pressure is 0 kgf / cm². ２ ~10 kgf / cm² ２ The method for crimping a laminate according to claim 1.

3. The first temperature is between 25°C and 55°C. The method for crimping laminates according to claim 1, wherein the third temperature is 25°C to 55°C.

4. In the heating step, the heating rate is 1°C / min to 20°C / min. The method for crimping laminates according to claim 1, wherein the cooling rate in the cooling step is 1°C / min to 20°C / min.

5. The method for crimping laminates according to claim 1, wherein the holding time during the holding stage is 10 sec to 1800 sec.

6. A step of preparing a laminate, The steps include pressurizing the laminate from a first pressure to a second pressure, The steps include heating the laminate from a first temperature to a second temperature, A step of maintaining the compression of the laminate at the second pressure and the second temperature, The steps include cooling the laminate from the second temperature to the third temperature, The step of reducing the pressure of the laminate from the second pressure to the third pressure, The second temperature is 70°C to 150°C. The aforementioned pressurizing step is, The steps include pressurizing the laminate from the first pressure to the first-second pressure, The step of pressurizing the laminate from the first-2 pressure to the second pressure, The aforementioned depressurization step is, The steps include reducing the pressure of the laminate from the second pressure to the second-to-third pressure, The step of reducing the pressure of the laminate from the second-third pressure to the third pressure, A method for bonding laminates, wherein the heating step is performed during the pressurizing step, and the cooling step is performed during the depressurizing step.

7. The aforementioned pressures 1-2 are 30 kgf / cm². ２ ~500kgf / cm ２ And, The second to third pressure is 30 kgf / cm ２ to 500 kgf / cm ２ The method for pressure bonding the laminate according to claim 6, wherein the pressure is within this range.

8. The steps include: forming a ceramic laminate by stacking dielectric sheets on which a conductive pattern is printed; The step of pressing the aforementioned ceramic laminate together, The step includes cutting the compressed ceramic laminate, The step of pressing the ceramic laminate includes the steps of pressurizing the ceramic laminate from a first pressure to a second pressure, heating the ceramic laminate from a first temperature to a second temperature, maintaining the pressing of the ceramic laminate at the second pressure and the second temperature, cooling the ceramic laminate from the second temperature to a third temperature, and depressurizing the ceramic laminate from the second pressure to a third pressure, wherein the second temperature is between 70°C and 150°C. A method for manufacturing ceramic electronic components, wherein the heating step is performed after the pressurizing step, and / or the cooling step is performed before the depressurizing step.

9. The step of firing the cut ceramic laminate to form a ceramic body, The method for manufacturing a ceramic electronic component according to claim 8, further comprising the step of forming an external electrode on the ceramic body.

10. The steps of forming a ceramic laminate by stacking dielectric sheets on which a conductive pattern is printed, The step of pressing the aforementioned ceramic laminate together, The step includes cutting the compressed ceramic laminate, The step of pressing the ceramic laminate includes the steps of pressurizing the ceramic laminate from a first pressure to a second pressure, heating the ceramic laminate from a first temperature to a second temperature, maintaining the pressing of the ceramic laminate at the second pressure and the second temperature, cooling the ceramic laminate from the second temperature to a third temperature, and depressurizing the ceramic laminate from the second pressure to a third pressure, wherein the second temperature is between 70°C and 150°C. The aforementioned pressurizing step is, The steps include pressurizing the ceramic laminate from the first pressure to the first-second pressure, The step includes pressurizing the ceramic laminate from the first-2 pressure to the second pressure, The aforementioned depressurization step is, The steps include reducing the pressure of the ceramic laminate from the second pressure to the second-to-third pressure, The step includes reducing the pressure of the ceramic laminate from the second-to-third pressure to the third pressure. A method for manufacturing ceramic electronic components, wherein the heating step is performed during the pressurizing step, and the cooling step is performed during the depressurizing step.

11. The step of firing the cut ceramic laminate to form a ceramic body, A method for manufacturing a ceramic electronic component according to claim 10, further comprising the step of forming an external electrode on the ceramic body.

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