Substrate processing apparatus and substrate processing method

Abstract

To provide a technology that can efficiently remove unnecessary molecules remaining on a substrate.SOLUTION: A substrate processing apparatus according to an embodiment of the present disclosure includes a substrate holder that holds a plurality of substrates in multiple stages with intervals in the vertical direction, and a processing container that accommodates the substrate holder, and the substrate holder has a partition plate that partitions between the adjacent substrates, the partition plate has a plurality of discharge portions on the lower surface that discharge the first gas, and the plurality of discharge portions can independently control supply and disconnection of the first gas.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] There is known a substrate processing apparatus having a processing container that horizontally accommodates a plurality of substrates in multiple stages and a processing gas supply system that supplies a processing gas into the processing container (see, for example, Patent Document 1). In Patent Document 1, the processing gas supply system supplies the processing gas perpendicularly to the upper surface of the substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of efficiently removing unnecessary molecules remaining on a substrate.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a substrate holder that holds a plurality of substrates in multiple stages with intervals in the vertical direction, a processing container that houses the substrate holder, A gas nozzle is provided vertically inside the processing container, and is provided with a partition plate that partitions between adjacent substrates, the partition plate having a plurality of discharge portions on the lower surface that discharge a first gas, The gas nozzle is configured to discharge a second gas horizontally between adjacent partition plates. wherein the plurality of discharge portions can be independently controlled to supply and cut off the first gas.

Effects of the Invention

[0006] According to the present disclosure, unnecessary molecules remaining on a substrate can be efficiently removed.

Brief Description of the Drawings

[0007] [Figure 1] Figure 1 shows a substrate processing apparatus according to an embodiment. [Figure 2] Figure 2 shows a substrate processing apparatus according to an embodiment of the present invention. [Figure 3] Figure 3 shows an example of a substrate holder. [Figure 4] Figure 4 shows another example of a substrate holder. [Figure 5] Figure 5 shows an example of the arrangement of the discharge section. [Figure 6] Figure 6 shows a substrate processing method according to an embodiment of the present invention. [Figure 7] Figure 7 shows a substrate processing method according to a first modified example of the embodiment. [Figure 8] Figure 8 shows a substrate processing method according to a second modified embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [Substrate Processing Equipment] The substrate processing apparatus 1 according to an embodiment will be described with reference to Figures 1 and 2. Figures 1 and 2 are diagrams showing the substrate processing apparatus 1 according to an embodiment.

[0010] As shown in Figure 1, the substrate processing apparatus 1 is a batch-type apparatus that processes multiple substrates W at once. The substrates W are, for example, semiconductor wafers.

[0011] The substrate processing apparatus 1 comprises a processing container 10, a gas supply unit 30, an exhaust unit 40, a heating unit 50, and a control unit 80.

[0012] The processing container 10 is capable of reducing the pressure inside. The processing container 10 houses the substrate W inside. The processing container 10 has an inner tube 11 and an outer tube 12. The inner tube 11 has a cylindrical shape with a ceiling that is open at the bottom. The outer tube 12 has a cylindrical shape with a ceiling that is open at the bottom and covers the outside of the inner tube 11. The inner tube 11 and the outer tube 12 are made of, for example, quartz. The inner tube 11 and the outer tube 12 have a double-tube structure arranged coaxially.

[0013] The ceiling of the inner tube 11 is, for example, flat. A housing section 13 is formed on one side of the inner tube 11 along its longitudinal direction (vertical direction). For example, as shown in Figure 2, a part of the side wall of the inner tube 11 is made to protrude outward to form a convex portion 14, and the inside of the convex portion 14 is formed as the housing section 13. The housing section 13 accommodates the gas nozzles 31a and 32a, which will be described later.

[0014] On the side wall opposite the inner tube 11, facing the housing section 13, a rectangular opening 15 is formed along its longitudinal direction (vertical direction). The opening 15 is a gas exhaust port formed to allow gas inside the inner tube 11 to be exhausted. The length of the opening 15 is the same as the length of the substrate holder 16, or longer than the length of the substrate holder 16, and is formed to extend vertically in both directions.

[0015] The lower end of the processing container 10 is supported by a cylindrical manifold 17. The manifold 17 is made of, for example, stainless steel. A flange 18 is formed at the upper end of the manifold 17. The flange 18 supports the lower end of the outer pipe 12. A sealing member 19, such as an O-ring, is provided between the flange 18 and the lower end of the outer pipe 12. This maintains an airtight seal inside the outer pipe 12.

[0016] An annular support portion 20 is provided on the inner wall of the upper part of the manifold 17. The support portion 20 supports the lower end of the inner pipe 11. A lid 21 is airtightly attached to the opening at the lower end of the manifold 17 via a sealing member 22 such as an O-ring. This airtightly closes the opening at the lower end of the processing container 10, i.e., the opening of the manifold 17. The lid 21 is made of, for example, stainless steel.

[0017] At the central part of the lid body 21, a rotating shaft 24 is provided so as to penetrate through a magnetic fluid seal 23. The lower part of the rotating shaft 24 is rotatably supported by an arm 25A of a lifting mechanism 25 composed of a boat elevator.

[0018] A rotating plate 26 is provided at the upper end of the rotating shaft 24. On the rotating plate 26, a substrate holder 16 for holding a substrate W is placed via a heat-insulating table 27 made of quartz. The substrate holder 16 rotates by rotating the rotating shaft 24. The substrate holder 16 moves up and down integrally with the lid body 21 by moving the lifting mechanism 25 up and down. Thereby, the substrate holder 16 is inserted into and removed from the processing container 10. The substrate holder 16 can be accommodated in the processing container 10. The substrate holder 16 holds a plurality (for example, 50 to 100 pieces) of substrates W in multiple stages with intervals in the vertical direction. Each substrate W is held in a horizontal posture. Details of the substrate holder 16 will be described later.

[0019] The gas supply unit 30 is configured to be able to introduce various gases into the inner pipe 11. The gas supply unit 30 includes a first gas supply unit 31, a second gas supply unit 32, a third gas supply unit 33, a fourth gas supply unit 34, and a fifth gas supply unit 35.

[0020] The first gas supply unit 31 includes a gas nozzle 31a inside the processing container 10 and a gas supply channel 31b outside the processing container 10. The gas supply channel 31b is equipped with a first processing gas supply source 31c, a mass flow controller 31d, and a valve 31e, arranged in order from upstream to downstream in the gas flow direction. As a result, the supply timing of the first processing gas from the first processing gas supply source 31c is controlled by the valve 31e, and the flow rate is adjusted to a predetermined level by the mass flow controller 31d. The first processing gas flows from the gas supply channel 31b to the gas nozzle 31a and is discharged from the gas nozzle 31a into the processing container 10. The first processing gas may be, for example, a silicon-containing gas or a metal-containing gas. The first gas supply unit 31 may also include a purge gas supply source and be configured to discharge purge gas from the gas nozzle 31a into the processing container 10. The purge gas may be, for example, an inert gas.

[0021] The second gas supply unit 32 includes a gas nozzle 32a inside the processing container 10 and a gas supply channel 32b outside the processing container 10. In the gas supply channel 32b, a second processing gas supply source 32c, a mass flow controller 32d, and a valve 32e are provided in order from upstream to downstream in the direction of gas flow. As a result, the supply timing of the second processing gas from the second processing gas supply source 32c is controlled by the valve 32e, and the flow rate is adjusted to a predetermined level by the mass flow controller 32d. The second processing gas flows from the gas supply channel 32b to the gas nozzle 32a and is discharged from the gas nozzle 32a into the processing container 10. The second processing gas may be, for example, an oxidizing gas or a nitriding gas. The second gas supply unit 32 may also include a purge gas supply source and be configured to discharge purge gas from the gas nozzle 32a into the processing container 10.

[0022] The gas nozzles 31a and 32a are fixed to the manifold 17. The gas nozzles 31a and 32a are made of, for example, quartz. The gas nozzles 31a and 32a extend linearly along the vertical direction near the inner pipe 11 and then bend in an L-shape within the manifold 17 to extend horizontally, thereby penetrating the manifold 17. The gas nozzles 31a and 32a are arranged side by side along the circumferential direction of the inner pipe 11, for example, as shown in Figure 2. The gas nozzles 31a and 32a are formed at, for example, the same height as each other.

[0023] Multiple gas holes 31f are provided in the portion of the gas nozzle 31a located inside the inner tube 11. Multiple gas holes 32f are provided in the portion of the gas nozzle 32a located inside the inner tube 11. The gas holes 31f and 32f are formed at predetermined intervals along the extending direction of each gas nozzle 31a and 32a. The gas holes 31f and 32f release gas in the horizontal direction. The spacing between each gas hole 31f is set to be the same as, for example, the spacing between substrates W held by the substrate holder 16. The height position of each gas hole 31f is set to be at an intermediate position between adjacent substrates W in the vertical direction. This allows each gas hole 31f to efficiently supply gas to the opposing surfaces between adjacent substrates W. The gas holes 32f may be the same as those of gas holes 31f.

[0024] Details of the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 will be described later.

[0025] The gas supply unit 30 may mix multiple types of gases and discharge the mixed gas from a single gas nozzle. The gas nozzles 31a and 32a may have different shapes and arrangements. In addition to the first processing gas, second processing gas, and purge gas, the gas supply unit 30 may further include a gas supply unit that supplies another gas.

[0026] The exhaust section 40 exhausts the gas that is discharged from inside the inner pipe 11 through the opening 15 and discharged from the gas outlet 41 through the space P1 between the inner pipe 11 and the outer pipe 12. The gas outlet 41 is formed on the upper side wall of the manifold 17, above the support section 20. An exhaust passage 42 is connected to the gas outlet 41. A pressure regulating valve 43 and a vacuum pump 44 are sequentially installed in the exhaust passage 42. The exhaust section 40 evacuates the inside of the processing container 10 using the vacuum pump 44 while adjusting the pressure inside the processing container 10 with the pressure regulating valve 43.

[0027] The heating section 50 is provided around the outer tube 12 and covers the outer tube 12. The heating section 50 is provided, for example, on the base plate 28. The heating section 50 has, for example, a cylindrical shape. The heating section 50 includes, for example, a heater. The heating section 50 heats the substrate W in the processing container 10 to a predetermined temperature.

[0028] The control unit 80 controls the operation of each part of the substrate processing apparatus 1. The control unit 80 may be, for example, a computer. The computer program that controls the operation of each part of the substrate processing apparatus 1 is stored in the storage medium 90. The storage medium 90 may be, for example, a flexible disk, compact disk, hard disk, flash memory, DVD, etc.

[0029] In addition to Figures 1 and 2, Figures 3 to 5 will also be used to describe the substrate holder 16, the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35. Figure 3 is a diagram showing an example of the substrate holder 16. Figure 4 is a diagram showing another example of the substrate holder 16. Figures 3 and 4 are diagrams showing a part of the longitudinal cross-section of the substrate processing apparatus 1. Figure 5 is a diagram showing an example of the arrangement of the discharge units 33a, 34a, and 35a. Figure 5 is a view of the partition plate 165 from below.

[0030] The substrate holder 16 includes a top plate 161, a bottom plate 162, a support column 163, a claw 164, and a partition plate 165.

[0031] The top plate 161 has a disc shape. The top plate 161 is placed at the top of the substrate holder 16 in a horizontal position.

[0032] The base plate 162 has a disc shape. The base plate 162 is located at the lowest part of the substrate holder 16 in a horizontal position. The base plate 162 faces the top plate 161.

[0033] Each support column 163 has a hollow, rod-like shape that extends vertically. The support columns 163 connect the top plate 161 and the bottom plate 162 at their periphery. Three support columns 163 are provided, for example, along the circumferential direction of the top plate 161 and the bottom plate 162. Hereinafter, when distinguishing between the three support columns 163, they will be referred to as support columns 163a, 163b, and 163c. There may be two support columns 163, or four or more.

[0034] The claws 164 extend from each support column 163 toward the center of the substrate holder 16. The claws 164 hold the substrate W. The claws 164a on support column 163a, claws 164b on support column 163b, and claws 164c on support column 163c are provided at the same height. As a result, the claws 164a, 164b, and 164c hold the substrate W in a horizontal position. Multiple claws 164a, 164b, and 164c are provided on each support column 163a, 163b, and 163c with vertical spacing between them. The number of claws 164a, 164b, and 164c provided on each support column 163a, 163b, and 163c is determined according to the number of substrates W that the substrate holder 16 holds. Instead of the claws 164, grooves may be provided on each support column 163, and the substrate W may be held by the grooves.

[0035] The partition plate 165 has a disc shape. The partition plate 165 is provided opposite the upper surface of the substrate W held by the claw 164. The partition plate 165 is provided between adjacent substrates W in the vertical direction. The partition plate 165 separates the space between adjacent substrates W in the vertical direction. The partition plates 165 are provided in multiple stages with spacing in the vertical direction. Each partition plate 165 is fixed to a plurality of support columns 163a, 163b, 163c.

[0036] The third gas supply unit 33 includes a discharge unit 33a, a gas branching channel 33b, a gas supply channel 33c, a purge gas supply source 33d, and a first treatment gas supply source 33e.

[0037] The fourth gas supply unit 34 includes a discharge unit 34a, a gas branching channel 34b, a gas supply channel 34c, a purge gas supply source 34d, and a second treatment gas supply source 34e.

[0038] The fifth gas supply unit 35 includes a discharge unit 35a, a gas branching channel 35b, a gas supply channel 35c, and a purge gas supply source 35d.

[0039] Each discharge section 33a, 34a, and 35a is provided on the lower surface of the partition plate 165. Each discharge section 33a, 34a, and 35a discharges gas toward the upper surface of the substrate W held by the claw 164. The multiple discharge sections 33a, 34a, and 35a are configured to allow independent control of gas supply and cut-off. The multiple discharge sections 33a, 34a, and 35a are provided at different radial positions on the partition plate 165, as shown in Figure 5. Discharge section 33a is provided in the central part of the partition plate 165. Discharge section 34a is provided around discharge section 33a. Discharge section 35a is provided around discharge section 34a. Discharge section 35a is provided on the peripheral edge of the partition plate 165. Each discharge section 33a, 34a, and 35a has a plurality of gas holes 33f, 34f, and 35f provided, for example, along the circumferential direction of the partition plate 165. Each discharge section 33a, 34a, and 35a discharges gas from the plurality of gas holes 33f, 34f, and 35f toward the upper surface of the substrate W.

[0040] The multiple gas holes 33f, 34f, and 35f are configured to discharge gas vertically downwards, as shown in Figure 3, for example. The multiple gas holes 33f, 34f, and 35f may also be configured to discharge gas vertically downwards toward the outside of the partition plate 165, as shown in Figure 4, for example. In this case, the gas discharged from the multiple gas holes 33f, 34f, and 35f forms a flow from the center of the processing container 10 toward the outside. For example, if the gas discharged from the multiple gas holes 33f, 34f, and 35f is purge gas, the purging efficiency will be increased.

[0041] The gas branch passages 33b, 34b, and 35b are provided inside the partition plate 165. The gas branch passages 33b, 34b, and 35b are in communication with the gas supply passages 33c, 34c, and 35c and the gas holes 33f, 34f, and 35f, respectively. The gas branch passages 33b, 34b, and 35b supply the gas introduced from the gas supply passages 33c, 34c, and 35c to the gas holes 33f, 34f, and 35f, respectively.

[0042] The gas supply channels 33c, 34c, and 35c are located inside the support columns 163a, 163b, and 163c, respectively. The lower ends of the gas supply channels 33c, 34c, and 35c are connected to the purge gas supply sources 33d, 34d, and 35d, respectively. Purge gas is introduced into the gas supply channels 33c, 34c, and 35c from the purge gas supply sources 33d, 34d, and 35d, respectively. The purge gas supply sources 33d, 34d, and 35d may include mass flow controllers, valves, etc. The purge gas may be, for example, an inert gas.

[0043] The lower ends of the gas supply channels 33c, 34c, and 35c may be connected to a processing gas supply source (not shown). For example, the lower end of gas supply channel 33c may be connected to a first processing gas supply source 33e, and the gas supply channel 33c may be configured to allow the introduction of the first processing gas. For example, the lower end of gas supply channel 34c may be connected to a second processing gas supply source 34e, and the gas supply channel 34c may be configured to allow the introduction of the second processing gas. The first processing gas supply source 33e and the second processing gas supply source 34e may each include a mass flow controller, a valve, etc. The first processing gas supply source 33e may be common to the first processing gas supply source 31c. The second processing gas supply source 34e may be common to the second processing gas supply source 32c.

[0044] The control unit 80 is configured to control the gas supply unit 30.

[0045] For example, the control unit 80 controls the gas supply unit 30 to discharge purge gas sequentially from the discharge unit 33a, which is closer to the center of the partition plate 165, to the discharge unit 35a, which is further away from the center of the partition plate 165. In this case, the pressure in the space between the substrate W and the partition plate 165 can be made relatively higher than the pressure inside the processing container 10. This allows for efficient removal of unwanted molecules remaining on the substrate W. In particular, if the substrate W has recesses such as trenches on its surface, the pressure inside the recesses can be made relatively higher than the pressure inside the processing container 10, so unwanted molecules remaining in deep positions inside the recesses can be removed. As a result, a film with good step-level coverage can be formed inside the recesses.

[0046] For example, the control unit 80 discharges the first processing gas from the gas nozzle 31a while simultaneously discharging the first processing gas from multiple discharge units 33a, thereby controlling the gas supply unit 30 to supplement the first processing gas discharged from the gas nozzle 31a. This increases the amount of first processing gas supplied to the substrate W.

[0047] For example, the control unit 80 discharges the second processing gas from the gas nozzle 32a while simultaneously discharging the second processing gas from multiple discharge units 34a, thereby controlling the gas supply unit 30 to supplement the second processing gas discharged from the gas nozzle 32a. This increases the amount of second processing gas supplied to the substrate W.

[0048] According to the substrate processing apparatus 1 of the embodiment described above, the substrate holder 16 has a partition plate 165 that separates adjacent substrates W. The partition plate 165 has a plurality of discharge parts 33a, 34a, and 35a on its lower surface for discharging purge gas, and the supply and cut-off of purge gas from the plurality of discharge parts 33a, 34a, and 35a can be controlled independently. In this case, purge gas is discharged from above each substrate W toward the upper surface of each substrate W, and the pressure in the space between the substrate W and the partition plate 165 can be made relatively higher than the pressure inside the processing container 10. This makes it possible to efficiently remove unwanted molecules remaining on the substrate W. In particular, if the substrate W has recesses such as trenches on its surface, the pressure inside the recesses can be made relatively higher than the pressure inside the processing container 10, so that unwanted molecules remaining in deep positions inside the recesses can be removed. As a result, a film with good step-level coverage can be formed inside the recesses.

[0049] [Substrate processing method] Referring to Figure 6, the operation when the substrate processing method according to the embodiment is carried out in the substrate processing apparatus 1 will be described. Figure 6 is a diagram showing the substrate processing method according to the embodiment. Figure 6 is a timing chart showing, from top to bottom, the discharge timing of the first processing gas discharged from the first gas supply unit 31, the second processing gas discharged from the second gas supply unit 32, the purge gas discharged from the third gas supply unit 33, the purge gas discharged from the fourth gas supply unit 34, and the purge gas discharged from the fifth gas supply unit 35.

[0050] First, the control unit 80 controls the lifting mechanism 25 to load the substrate holder 16, which holds multiple substrates W, into the processing container 10, and then seals the opening at the lower end of the processing container 10 airtight with the lid 21. Next, the control unit 80 controls the exhaust unit 40 to reduce the pressure inside the processing container 10 to a predetermined level, and controls the heating unit 50 to adjust and maintain the temperature of the substrates W at a predetermined level. The control unit 80 may also rotate the substrate holder 16 at a predetermined rotational speed by rotating the rotating shaft 24.

[0051] Next, a desired film is formed on each substrate W by atomic layer deposition (ALD). Specifically, a cycle consisting of an adsorption step, a first purging step, a reaction step, and a second purging step is repeated a set number of times to form a desired film with a desired thickness on each substrate W. The number of repetitions is determined according to the desired film thickness. Each step included in ALD is carried out by the control unit 80 controlling each part of the substrate processing apparatus 1.

[0052] In the adsorption process, as shown in Figure 6, the first processing gas is discharged from the first gas supply unit 31 into the processing container 10, and the first processing gas is adsorbed onto each substrate W. In the adsorption process, the first gas supply unit 31 discharges the first processing gas horizontally from the gas holes 31f of the gas nozzle 31a between adjacent partition plates 165. The first processing gas may be, for example, a silicon-containing gas or a metal-containing gas.

[0053] In the adsorption process, the first processing gas may be discharged from at least one of the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 toward the upper surface of each substrate W, supplementing the first processing gas discharged from the first gas supply unit 31. For example, by discharging the first processing gas from the third gas supply unit 33, the amount of first processing gas supplied to the central part of the substrate W can be increased. For example, by discharging the first processing gas from the fifth gas supply unit 35, the amount of first processing gas supplied to the peripheral part of the substrate W can be increased. For example, by discharging the first processing gas from the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35, the amount of first processing gas supplied to the entire in-plane surface of the substrate W can be increased. The third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 discharge the first processing gas, for example, directly downward in the vertical direction. The third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 may discharge the first processing gas toward the outside of the partition plate 165 with respect to the vertical direction directly downward.

[0054] After the adsorption process, the discharge of the first processed gas from the first gas supply unit 31 is stopped. If the first processed gas is being discharged from the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35, the discharge of the first processed gas from the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 is stopped.

[0055] In the first purging step, as shown in Figure 6, purging gas is discharged from the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 toward the upper surface of each substrate W, making the pressure in the space between the substrate W and the partition plate 165 relatively higher than the pressure inside the processing container 10. This allows for the efficient removal of unwanted molecules remaining on the substrate W. In particular, if the substrate W has recesses such as trenches on its surface, the pressure inside the recesses can be made relatively higher than the pressure inside the processing container 10, so unwanted molecules remaining in deep positions inside the recesses can be removed. As a result, a film with good step-level coverage can be formed inside the recesses.

[0056] In the first purging step, for example, the purge gas is discharged toward the upper surface of each substrate W in the order of the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35. In this case, the purge gas forms a flow from the center outward of the processing container 10, thus increasing the purging efficiency. The third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 each discharge the purge gas toward the outside of the partition plate 165, for example, directly downward in the vertical direction. In this case, the purge gas is more likely to form a flow from the center outward of the processing container 10. The third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 may each discharge the purge gas directly downward in the vertical direction. The purge gas may be, for example, an inert gas.

[0057] Specifically, first, the discharge of purge gas from the third gas supply unit 33 is started. Next, while the discharge of purge gas from the third gas supply unit 33 continues, the discharge of purge gas from the fourth gas supply unit 34 is started. Next, the discharge of purge gas from the third gas supply unit 33 is stopped. Next, while the discharge of purge gas from the fourth gas supply unit 34 continues, the discharge of purge gas from the fifth gas supply unit 35 is started. Next, the discharge of purge gas from the fourth gas supply unit 34 is stopped. Next, the discharge of purge gas from the fifth gas supply unit 35 is stopped.

[0058] In the reaction step, as shown in Figure 6, a second processing gas is discharged from the second gas supply unit 32 into the processing container 10, and the first processing gas adsorbed on each substrate W reacts with the second processing gas to produce reaction products. In the reaction step, the second gas supply unit 32 discharges the second processing gas horizontally from the gas holes 32f of the gas nozzle 32a between adjacent partition plates 165. The second processing gas may be, for example, an oxidizing gas or a nitriding gas. The reaction products may be, for example, a silicon oxide film, a silicon nitride film, a metal oxide film, or a metal nitride film.

[0059] In the reaction process, the second processing gas may be discharged from at least one of the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 toward the upper surface of each substrate W, supplementing the second processing gas discharged from the second gas supply unit 32. For example, by discharging the second processing gas from the third gas supply unit 33, the amount of second processing gas supplied to the central part of the substrate W can be increased. For example, by discharging the second processing gas from the fifth gas supply unit 35, the amount of second processing gas supplied to the peripheral part of the substrate W can be increased. For example, by discharging the second processing gas from the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35, the amount of second processing gas supplied to the entire plane of the substrate W can be increased. The third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 discharge the second processing gas, for example, directly downward in the vertical direction. The third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 may discharge the second processing gas outwards from the partition plate 165 with respect to the vertically downward direction.

[0060] After the reaction process, the discharge of the second processing gas from the second gas supply unit 32 is stopped. If the second processing gas is being discharged from the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35, the discharge of the second processing gas from the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 is stopped.

[0061] In the second purging step, as shown in Figure 6, purging gas is discharged from the third gas supply unit 33, the fourth gas supply unit 34, and the fifth gas supply unit 35 toward the upper surface of each substrate W, making the pressure in the space between the substrate W and the partition plate 165 relatively higher than the pressure inside the processing container 10. The second purging step may be the same as, for example, the first purging step.

[0062] After a set number of cycles including the adsorption step, the first purge step, the reaction step, and the second purge step in that order, the control unit 80 increases the pressure inside the processing container 10 to atmospheric pressure and lowers the temperature inside the processing container 10 to the discharge temperature. Subsequently, the control unit 80 controls the lifting mechanism 25 to discharge the substrate holder 16 from inside the processing container 10, and the process ends.

[0063] According to the substrate processing method of the embodiment described above, in the first and second purging steps, a purge gas is discharged from above each substrate W toward the upper surface of each substrate W, thereby making the pressure in the space between the substrate W and the partition plate 165 relatively higher than the pressure inside the processing container 10. This allows for the efficient removal of unwanted molecules remaining on the substrate W. In particular, if the substrate W has recesses such as trenches on its surface, the pressure inside the recesses can be made relatively higher than the pressure inside the processing container 10, so unwanted molecules remaining in deep positions inside the recesses can be removed. As a result, a film with good step-level coverage can be formed inside the recesses.

[0064] Referring to Figure 7, the operation when the substrate processing method according to the first modified embodiment is carried out in the substrate processing apparatus 1 will be described. Figure 7 is a diagram showing the substrate processing method according to the first modified embodiment. Figure 7 is a timing chart showing, from top to bottom, the discharge timing of the first processing gas discharged from the first gas supply unit 31, the second processing gas discharged from the second gas supply unit 32, the purge gas discharged from the third gas supply unit 33, the purge gas discharged from the fourth gas supply unit 34, and the purge gas discharged from the fifth gas supply unit 35.

[0065] In the first modified example, in the first and second purging processes, the periods during which the third gas supply unit 33 discharges purge gas, the fourth gas supply unit 34 discharges purge gas, and the fifth gas supply unit 35 discharge purge gas do not overlap. Other aspects may be the same as the substrate processing method shown in Figure 6. The following explanation will focus on the differences from the substrate processing method shown in Figure 6.

[0066] In the first purging process, as shown in Figure 7, the discharge of purge gas from the third gas supply unit 33 is started first. Next, the discharge of purge gas from the third gas supply unit 33 is stopped, and at the same time, the discharge of purge gas from the fourth gas supply unit 34 is started. After stopping the discharge of purge gas from the third gas supply unit 33, there may be a delay before starting the discharge of purge gas from the fourth gas supply unit 34. Next, the discharge of purge gas from the fourth gas supply unit 34 is stopped, and at the same time, the discharge of purge gas from the fifth gas supply unit 35 is started. After stopping the discharge of purge gas from the fourth gas supply unit 34, there may be a delay before starting the discharge of purge gas from the fifth gas supply unit 35. Next, the discharge of purge gas from the fifth gas supply unit 35 is stopped.

[0067] The second purging process may be similar to, for example, the first purging process.

[0068] In the first modified example described above, the same effects and advantages as those of the substrate processing method according to the embodiment are achieved.

[0069] In the first modified example, a case was described in which the periods during which the three gas supply units (third gas supply unit 33, fourth gas supply unit 34, and fifth gas supply unit 35) discharge purge gas do not overlap in the first and second purge processes, but the invention is not limited to this. For example, the periods during which the three gas supply units discharge purge gas may overlap in the first purge process, but the periods during which the three gas supply units discharge purge gas may not overlap in the second purge process. For example, the periods during which the three gas supply units discharge purge gas may not overlap in the first purge process, but the periods during which the three gas supply units discharge purge gas may overlap in the second purge process.

[0070] Referring to Figure 8, the operation when the substrate processing method according to the second modified embodiment is carried out in the substrate processing apparatus 1 will be described. Figure 8 is a diagram showing the substrate processing method according to the second modified embodiment. Figure 8 is a timing chart showing, from top to bottom, the discharge timing of the first processing gas discharged from the first gas supply unit 31, the second processing gas discharged from the second gas supply unit 32, the purge gas discharged from the third gas supply unit 33, the purge gas discharged from the fourth gas supply unit 34, the purge gas discharged from the fifth gas supply unit 35, and the timing of vacuuming.

[0071] In the second modification, vacuuming of the processing container 10 is performed at the beginning and end of the first and second purging steps. Other aspects may be the same as the substrate processing method shown in Figure 6. The following explanation will focus on the differences from the substrate processing method shown in Figure 6.

[0072] In the first purging process, as shown in Figure 8, the processing container 10 is first vacuumed using the exhaust unit 40. Vacuuming of the processing container 10 is performed, for example, with the discharge of gas from all gas supply units (first gas supply unit 31, second gas supply unit 32, third gas supply unit 33, fourth gas supply unit 34, and fifth gas supply unit 35) stopped. Next, the vacuuming of the processing container 10 is stopped. Next, the discharge of purge gas from the third gas supply unit 33 is started. Next, with the discharge of purge gas from the third gas supply unit 33 continuing, the discharge of purge gas from the fourth gas supply unit 34 is started. Next, the discharge of purge gas from the third gas supply unit 33 is stopped. Next, with the discharge of purge gas from the fourth gas supply unit 34 continuing, the discharge of purge gas from the fifth gas supply unit 35 is started. Next, the discharge of purge gas from the fourth gas supply unit 34 is stopped. Next, the discharge of purge gas from the fifth gas supply unit 35 is stopped. Finally, the processing container 10 is evacuated using the exhaust unit 40. Vacuuming of the processing container 10 is performed, for example, with the discharge of gas from all gas supply units stopped. Next, the vacuuming of the processing container 10 is stopped.

[0073] The second purging process may be similar to, for example, the first purging process.

[0074] In the second modified example described above, the same effects and advantages as those of the substrate processing method according to the embodiment are achieved.

[0075] The second modified example describes a case where vacuuming is performed at the beginning and end of the first purging process, but is not limited to this. For example, vacuuming may be performed at the beginning of the first purging process, but not at the end of the first purging process. For example, vacuuming may not be performed at the beginning of the first purging process, but may be performed at the end of the first purging process. For example, vacuuming may be performed while discharging purge gas from each gas supply unit (third gas supply unit 33, fourth gas supply unit 34, and fifth gas supply unit 35) during the first purging process. The second purging process may be the same as the first purging process.

[0076] The second modified example describes a case where vacuuming is performed in both the first and second purging processes, but it is not limited to this. For example, vacuuming may be performed in the first purging process but not in the second purging process. For example, vacuuming may not be performed in the first purging process but may be performed in the second purging process.

[0077] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0078] In the above embodiment, a case was described in which three discharge sections, whose gas supply and cutoff can be independently controlled, are provided on the lower surface of each partition plate, but the disclosure is not limited thereto. There may be multiple discharge sections, for example, two or four or more.

[0079] The above embodiments describe a case where the processing container is a double-tube structure, but the disclosure is not limited thereto. For example, the processing container may be a single-tube structure.

[0080] In the above embodiment, a case was described in which the substrate processing apparatus discharges gas from a gas nozzle arranged along the longitudinal direction of the processing container and exhausts the gas from a slit arranged opposite the gas nozzle. However, the disclosure is not limited thereto. For example, the substrate processing apparatus may discharge gas from a gas nozzle arranged along the longitudinal direction of the substrate holder and exhaust the gas from an exhaust port arranged above the substrate holder. Alternatively, for example, the substrate processing apparatus may supply processing gas from a gas nozzle arranged below the processing container and exhaust the gas from an exhaust port arranged above the processing container.

[0081] The above embodiments describe a case in which the substrate processing apparatus does not have a plasma generation unit, but the disclosure is not limited thereto. For example, the substrate processing apparatus may have a plasma generation unit that generates plasma from a processing gas supplied into the processing vessel from a gas nozzle. [Explanation of Symbols]

[0082] 1. Substrate processing apparatus 10 Processing containers 16. Substrate holder 165 Partition Plate 33a, 34a, 35a Discharge section W board

Claims

1. A substrate holder that holds multiple substrates in multiple stages with vertical spacing between them, A processing container for housing the aforementioned substrate holder, A gas nozzle is provided vertically inside the processing container, Equipped with, The substrate holder has a partition plate that separates adjacent substrates, The partition plate has a plurality of discharge sections on its lower surface for discharging the first gas, The gas nozzle is configured to discharge a second gas horizontally between adjacent partition plates. The supply and interruption of the first gas can be controlled independently for each of the multiple discharge units. Circuit board processing equipment.

2. The partition plate has a disc shape, The plurality of discharge sections are provided at different radial positions on the partition plate. The substrate processing apparatus according to claim 1.

3. The partition plate has a disc shape, Each of the aforementioned multiple discharge sections has a plurality of gas holes provided along the circumferential direction of the partition plate. The substrate processing apparatus according to claim 1.

4. The plurality of gas holes discharge the first gas in a direction that is directly downward in the vertical direction. The substrate processing apparatus according to claim 3.

5. The plurality of gas holes discharge the first gas toward the outside of the partition plate with respect to the vertical direction directly downward. The substrate processing apparatus according to claim 3.

6. The substrate holder has a plurality of support columns for holding the partition plate, The plurality of support columns have gas branching passages that supply the first gas to the plurality of discharge sections. The substrate processing apparatus according to claim 1.

7. The processing container is provided with a heating section that heats the plurality of substrates held by the substrate holder, The substrate processing apparatus according to claim 1.

8. It further includes a control unit, The first gas includes a purge gas. The control unit is configured to control the substrate processing apparatus so that it discharges the purge gas sequentially from the discharge unit closest to the center of the partition plate to the discharge unit furthest from the center of the partition plate. A substrate processing apparatus according to any one of claims 1 to 7.

9. It further includes a control unit, The first gas and the second gas include a processing gas. The control unit is configured to control the substrate processing apparatus so that the processing gas is discharged from the gas nozzle and the processing gas is discharged from the plurality of discharge units. A substrate processing apparatus according to any one of claims 1 to 7.

10. A substrate holder that holds multiple substrates in multiple stages with vertical spacing between them, A processing container for housing the aforementioned substrate holder, A gas nozzle is provided vertically inside the processing container, Equipped with, The substrate holder has a partition plate that separates adjacent substrates, The partition plate has multiple discharge sections on its lower surface, In a substrate processing apparatus, the gas nozzle is configured to discharge a second gas horizontally between adjacent partition plates. A substrate processing method for processing the aforementioned plurality of substrates, The process includes discharging purge gas from the multiple discharge ports at different timings to purge the inside of the processing container. Substrate processing method.

11. The purging step includes sequentially discharging the purge gas from the discharge port closest to the center of the partition plate toward the discharge port furthest from the center of the partition plate. The substrate processing method according to claim 10.

12. A step of discharging a first processing gas horizontally into the processing container and adsorbing the first processing gas onto the plurality of substrates held by the substrate holder, A step of discharging a second processing gas horizontally into the processing container and reacting the first processing gas adsorbed on the plurality of substrates with the second processing gas to generate a reaction product, A substrate processing method according to claim 10, comprising:

13. The adsorption step includes discharging the first processing gas from the plurality of discharge units. The substrate processing method according to claim 12.

14. The generation step includes discharging the second processing gas from the plurality of discharge units. The substrate processing method according to claim 12.

15. The cycle of performing the adsorption step, the purging step, the generation step, and the purging step in this order is repeated. The substrate processing method according to any one of claims 12 to 14.

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