Method and apparatus for manufacturing semiconductor devices

Abstract

This manufacturing method for a semiconductor element includes: a step in which a plurality of elements SL, each including a semiconductor layer 8 grown on a growth substrate TS, are bonded to a surface of a support substrate MS; a step in which external force is applied to a rear surface UF of either the growth substrate TS or the support substrate MS, the external force providing unevenly distributed pressure within a plane; and a step in which the plurality of elements SL bonded to the support substrate MS are separated from the growth substrate TS.

Description

Technical Field

[0001] The present disclosure relates to a method and an apparatus for manufacturing a semiconductor device.

Background Art

[0002] Patent Document 1 discloses a method of forming a plurality of semiconductor layers (for example, GaN layers) on a growth substrate having a mask pattern by using the ELO (Epitaxial Lateral Overgrowth) method, and peeling each semiconductor layer from the growth substrate using a dicing tape.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

[0004] The method for manufacturing a semiconductor device according to the present disclosure includes a step of bonding a plurality of elements each including a semiconductor layer grown on a growth substrate to the surface of a support substrate, a step of applying an external force to one of the back surfaces of the growth substrate and the support substrate so as to obtain an in-plane non-uniform pressing distribution, and a step of peeling the plurality of elements bonded to the support substrate from the growth substrate.

Brief Description of the Drawings

[0005] [Figure 1] It is a flowchart showing the method for manufacturing a semiconductor device according to the present embodiment. [Figure 2] It is a plan view showing a growth substrate and a plurality of elements. [Figure 3] It is a cross-sectional view showing the method for manufacturing a semiconductor device according to the present embodiment. [Figure 4] It is a cross-sectional view showing the method for manufacturing a semiconductor device according to the present embodiment. [Figure 5] It is a cross-sectional view showing the method for manufacturing a semiconductor device according to the present embodiment. [Figure 6] This is a plan view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 7] This is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 8] This is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 9] This is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 10] This is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 11] This is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 12] This is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 13] This is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 14] This is a cross-sectional view showing a semiconductor device manufacturing apparatus according to this embodiment. [Figure 15] This is a cross-sectional view showing a semiconductor device manufacturing apparatus according to this embodiment. [Figure 16] This flowchart shows a method for manufacturing a semiconductor element according to this embodiment. [Figure 17] This is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 18] This is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. [Figure 19] This is a cross-sectional view showing a semiconductor device manufacturing apparatus according to this embodiment. [Figure 20] This is a cross-sectional view showing a semiconductor device manufacturing apparatus according to this embodiment. [Figure 21] This is a plan view showing the configuration of a semiconductor substrate according to the embodiment. [Figure 22] This is a plan view showing the configuration of a semiconductor substrate according to the embodiment. [Figure 23] Figures 21 and 22 are cross-sectional views. [Figure 24]It is a cross-sectional view showing the configuration of a semiconductor substrate according to an embodiment. [Figure 25] It is a cross-sectional view showing the configuration of a semiconductor substrate according to an embodiment.

Embodiment for Carrying Out the Invention

[0006] FIG. 1 is a flowchart showing a method for manufacturing a semiconductor device according to the present embodiment. FIG. 2 is a plan view showing a growth substrate and a plurality of elements. FIGS. 3 to 5 are cross-sectional views showing a method for manufacturing a semiconductor device according to the present embodiment. FIG. 6 is a plan view showing a method for manufacturing a semiconductor device according to the present embodiment. As shown in FIGS. 1 to 6, the method for manufacturing a semiconductor device according to the present embodiment includes a step (S10) of bonding a plurality of elements SL each including a semiconductor layer 8 grown on a growth substrate TS to the surface of a support substrate MS, a step (S20) of applying an external force to one back surface UF of the growth substrate TS and the support substrate MS so as to have an in-plane non-uniform pressing distribution, and a step (S30) of peeling the plurality of elements SL bonded to the support substrate MS from the growth substrate TS.

[0007] As shown in FIG. 4, in a state where a plurality of elements SL are bonded to the surface of the support substrate MS, for example, by applying an external force to the back surface UT of the growth substrate TS so as to have an in-plane non-uniform pressing distribution, the elements SL can be inclined with respect to the growth substrate TS, and the joint J can be easily broken. Specifically, by setting a pressing distribution in which the pressing changes in the first direction X, the joint J with the growth substrate TS is inclined with respect to the normal line of the growth substrate TS, and shear stress is concentrated in the vicinity of the interface between the growth substrate TS and the joint J, and the joint J is broken. It is preferable to apply an external force to the back surface UM of the support substrate MS so as to have an in-plane uniform and time-invariant pressing distribution.

[0008] Hitherto, there has been a problem that the yield of the process of transferring a plurality of elements on a growth substrate to a support substrate is low. However, according to the method for manufacturing a semiconductor device according to the present embodiment, the yield when transferring a plurality of elements SL to the support substrate MS is improved.

[0009] The growth substrate TS and the support substrate MS may be rigid substrates. Each of the growth substrate TS and the support substrate MS may include a silicon-based substrate (e.g., Si substrate, SiC substrate). The growth substrate TS may include a base substrate BS and a mask pattern 6 including a mask portion 5 and an opening K. The bonding material for bonding the element SL and the support substrate MS may have rigidity. Thereby, the yield can be further increased.

[0010] The semiconductor layer 8 contains a nitride semiconductor as a main component. The nitride semiconductor can be represented, for example, as AlxGayInzN (0≦x≦1; 0≦y≦1; 0≦z≦1; x + y + z = 1), and specific examples include GaN-based semiconductors, AlN (aluminum nitride), InAlN (indium aluminum nitride), and InN (indium nitride). The GaN-based semiconductor is a semiconductor containing gallium atoms (Ga) and nitrogen atoms (N), and typical examples include GaN, AlGaN, AlGaInN, and InGaN.

[0011] The semiconductor layer 8 may be of a doped type (e.g., n-type containing donors) or an undoped type. The growth substrate TS includes the main substrate 1. The base substrate BS may sometimes be referred to as including the main substrate 1 and the underlayer 4. The growth substrate TS includes a plurality of seed regions SA arranged in a stripe shape in the first direction X, and each of the plurality of elements SL may be connected to the plurality of seed regions SA.

[0012] The plurality of elements SL may be formed spaced apart in the first direction X, and a gap GP may be formed between two adjacent elements SL. The first direction X may be the a-axis direction (<11-20> direction) of the semiconductor layer 8 (nitride semiconductor such as GaN). The second direction Y may be the m-axis direction (<1-100> direction) of the semiconductor layer 8. The third direction Z (the thickness direction of the semiconductor layer 8) may be the c-axis direction (<0001> direction) of the semiconductor layer 8.

[0013] As shown in Figures 2 to 4, the semiconductor layer 8 can be formed by the ELO (Epitaxial Lateral Overgrowth) method, starting from the underlying layer 4 (seed region SA) exposed below the opening K. The underlying layer 4 may be, for example, a single layer of AlN, a double layer of AlN (lower layer) and GaN (upper layer), or a double layer of Al (lower layer) and AlN (upper layer). The bonding region J located within the opening K is the initial formed layer and bonds with the exposed underlying layer 4 (seed region SA). Of the semiconductor layer 8, the base region B located above the opening K becomes a dislocation inheritance region with many through-dislocations, while the wing region F located above the mask region 5 becomes a low-defect region with a smaller through-dislocation density compared to the dislocation inheritance region.

[0014] The base substrate BS may have a main substrate 1 which is a different type of substrate with a different lattice constant from the semiconductor layer 8. The semiconductor layer 8 may contain a GaN-based semiconductor, and the main substrate 1, which is a different type of substrate, may be a silicon substrate. Examples of different types of substrates include sapphire (Al2O3) substrates and silicon carbide (SiC) substrates. The plane orientation of the main substrate 1 is, for example, the (111) plane of a silicon substrate, the (0001) plane of a sapphire substrate, and the 6H-SiC(0001) plane of a SiC substrate. These are examples, and any substrate and plane orientation that can grow the semiconductor layer 8 by the ELO method is acceptable.

[0015] The mask pattern 6 includes a mask portion 5 and an opening K. The opening K functions as a growth initiation hole, exposing a portion of the underlying layer 4 (seed region SA) and initiating the growth of the semiconductor layer 8. The mask portion 5 may also function as a selective growth mask (deposition suppression mask) for lateral growth of the semiconductor layer 8, and the surface of the mask portion 5 becomes a growth suppression region (non-seed region) DA.

[0016] As the mask portion 5, for example, a single layer film containing one of the following: a silicon oxide film (SiOx), a titanium nitride film (TiN, etc.), a silicon nitride film (SiNx), a silicon oxynitride film (SiON), and a metal film having a high melting point (e.g., 1000 degrees or higher), or a multilayer film containing at least two of these, can be used. A thermal oxide film obtained by thermal oxidation treatment of a silicon substrate, a silicon nitride substrate, etc., may also be used as the mask portion 5. As the mask portion 5, a multilayer film in which a silicon oxide film and a silicon nitride film are formed in this order can be used. The upper layer film in contact with the semiconductor layer 8 may be a silicon nitride film.

[0017] The element SL may include a functional layer 9 located on a semiconductor layer 8, and the functional layer 9 may include an active layer, a p-type layer, and electrodes (e.g., anode and cathode). The active layer may have a quantum well structure. The semiconductor layer 8, the active layer, and the p-type layer may be made of GaN-based semiconductors and may be continuously formed using an MOCVD apparatus.

[0018] The support substrate MS may be a submount substrate and may include electrode pads PA and PC. The element SL and the electrode pad PA may be joined via solder H. The anode of the element SL and the electrode pad PA may be joined via solder H. The solder H may be a Sn-Au alloy.

[0019] As shown in Figures 3 and 6, step S10 in Figure 1 may be a selective transfer. That is, the multiple elements SL bonded to the support substrate MS may be a group of selected elements SG chosen from all elements on the growth substrate TS.

[0020] In Figures 1 to 5, multiple elements SL (selected element group) are bonded to the support substrate MS without removing the mask portion 5 of the growth substrate TS. In this case, as shown in Figure 4, when the element SL is tilted relative to the growth substrate TS, a part of the element SL may be embedded in the mask portion 5. Figure 7 is a cross-sectional view showing the manufacturing method of the semiconductor element according to this embodiment. As shown in Figure 7, after removing the mask portion 5 of the growth substrate TS by wet etching or the like, multiple elements SL (selected element group) are bonded to the support substrate MS, and the elements SL may be tilted relative to the growth substrate TS to break the bonding portion J.

[0021] Figures 8 and 9 are cross-sectional views showing a method for manufacturing semiconductor devices according to this embodiment. In Figures 3 and 4, an external force is applied to the back surface UF of the growth substrate TS, but the method is not limited to this. As shown in Figures 8 and 9, when multiple devices SL are bonded to the surface of a support substrate MS, applying an external force to the back surface UM of the support substrate MS that results in a non-uniform in-plane pressure distribution causes the devices SL to tilt relative to the growth substrate TS, and the bonding portion J can be easily fractured. Specifically, by creating a pressure distribution where the pressure changes in the first direction X, the bonding portion J with the growth substrate TS tilts with respect to the normal of the growth substrate TS, and shear stress concentrates near the interface between the growth substrate TS and the bonding portion J, causing the bonding portion J to fracture. It is preferable to apply an external force to the back surface UT of the growth substrate TS that results in a uniform in-plane pressure distribution that does not change over time.

[0022] Figure 10 is a cross-sectional view showing a method for manufacturing a semiconductor element according to this embodiment. As shown in Figure 10, the pressure distribution on the back surface of the growth substrate TS may be changed over time. For example, a plate PT tilted by a predetermined positive angle around an axis (Y direction, m-axis of the semiconductor layer 8) perpendicular to the first direction X is pressed against the back surface of the growth substrate TS, and then a plate PT tilted by a predetermined negative angle is pressed against it. The predetermined positive angle may be 1° to 3°, and the predetermined negative angle may be -1° to -3°. This allows the selected element group SG (multiple elements SL that are the target of selective transfer) to be tilted in the positive and negative directions relative to the growth substrate TS. Even if there are bonding portions J (see Figure 4) in the selected element group SG that did not break with a positive tilt, they can be broken with a negative tilt, thereby increasing the transfer yield of the selected element group SG. Here, if the tilt is less than 1°, the tilt is insufficient and the yield decreases, and if it is 3° or more, the plate PT may float away from the growth substrate TS, making it impossible to apply force appropriately.

[0023] Figure 11 is a cross-sectional view showing a method for manufacturing a semiconductor element according to this embodiment. As shown in Figure 11, the pressure distribution on the back surface of the support substrate MS may be changed over time. For example, a plate PT tilted by a predetermined positive angle around an axis (Y direction, m-axis of the semiconductor layer 8) perpendicular to the first direction X is pressed against the back surface of the support substrate MS, and then a plate PT tilted by a predetermined negative angle is pressed against it. The predetermined positive angle may be 1° to 3°, and the predetermined negative angle may be -1° to -3°. This allows the selected element group SG (multiple elements SL that are the target of selective transfer) to be tilted in the positive and negative directions with respect to the growth substrate TS. Even if there are bonding portions J (see Figure 4) in the selected element group SG that did not break with a positive tilt, they can be broken with a negative tilt, thereby increasing the transfer yield of the selected element group SG.

[0024] Figure 12 is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. As shown in Figure 12, the pressure distribution on the back surface of the growth substrate TS may be changed over time by moving the roller R, which is pressed against the back surface of the growth substrate TS, in a first direction X. This allows the selected element group SG (a plurality of elements SL that are the target of selective transfer) to be tilted in the positive and negative directions relative to the growth substrate TS. Even if there are bonding portions J (see Figure 4) in the selected element group SG that did not break with a positive tilt, they can be broken with a negative tilt, thereby increasing the transfer yield of the selected element group SG. The growth substrate TS may be adsorbed onto the roller R after the transfer of the selected element group SG.

[0025] Figure 13 is a cross-sectional view showing a method for manufacturing a semiconductor device according to this embodiment. As shown in Figure 13, the pressure distribution on the back surface of the support substrate MS may be changed over time by moving the roller R, which is pressed against the back surface of the support substrate MS, in a first direction X. This allows the selected element group SG (a plurality of elements SL that are the target of selective transfer) to be tilted in the positive and negative directions with respect to the growth substrate TS. Even if there are bonding portions J (see Figure 4) in the selected element group SG that did not break with a positive tilt, they can be broken with a negative tilt, thereby increasing the transfer yield of the selected element group SG. After the transfer of the selected element group SG, the support substrate MS (including the selected element group SG) may be adsorbed onto the roller R.

[0026] Figure 14 is a cross-sectional view showing a semiconductor device manufacturing apparatus according to this embodiment. As shown in Figure 14, the semiconductor device manufacturing apparatus 50 may include a device G1 that can hold and transport a workpiece 30 by adsorption from its lower surface, and a device G2 that drives a plate PT whose tilt can be changed while applying a compressive force from the upper surface of the workpiece 30. The device G1 is capable of movement in the X direction, movement in the Y direction, and rotation in the XY plane, and aligns the position of the workpiece 30 and the orientation of the selected element group SG with respect to the plate PT. The device G2 is capable of movement in the Z direction and rotation in the XZ plane. After applying force to the workpiece 30, the semiconductor device manufacturing apparatus 50 separates the selected element group SG from the growth substrate TS by holding the upper and lower surfaces of the workpiece by adsorption.

[0027] Figure 15 is a cross-sectional view showing a semiconductor device manufacturing apparatus according to this embodiment. As shown in Figure 15, the semiconductor device manufacturing apparatus 50 may include a device G1 that can hold and transport a workpiece 30 by adsorption from its lower surface, and a device G3 that drives a roller R that applies a compressive force to the upper surface of the workpiece 30. The device G1 is capable of movement in the X direction, movement in the Y direction, and rotation in the XY plane, and aligns the position of the workpiece 30 and the orientation of the selected element group SG with respect to the roller R. The semiconductor device manufacturing apparatus 50 applies a compressive force from the roller R from one end to the other of the support substrate MS by moving the device G1 in the X direction. The roller R is in an adsorption state, and after applying force to the workpiece 30, the upper side of the workpiece (support substrate MS and selected element group SG) is adsorbed toward the roller R, causing separation. In Figure 15, the pressure of the roller R is applied to the support substrate MS, but this is not limited to this, and the pressure of the roller R may also be applied to the growth substrate TS.

[0028] Figure 16 is a flowchart showing a method for manufacturing a semiconductor device according to this embodiment. As shown in Figure 16, the method for manufacturing a semiconductor device according to this embodiment includes the steps of: bonding a plurality of devices SL, each containing a semiconductor layer 8 grown on a growth substrate TS, to the surface of a support substrate MS (S60); applying an external force to one of the growth substrate TS and the support substrate MS in a first direction (X direction) perpendicular to the substrate thickness direction (S70); and peeling off the plurality of devices SL bonded to the support substrate MS from the growth substrate TS (S80).

[0029] Figures 17 and 18 are cross-sectional views showing a method for manufacturing a semiconductor device according to this embodiment. As shown in Figure 17, an external force may be applied to the growth substrate TS in a first direction (X direction). In this case, an external force may be applied to the support substrate MS in the opposite direction to the first direction (-X direction). Also, as shown in Figure 18, an external force may be applied to the support substrate MS in a first direction (X direction). In this case, an external force may be applied to the growth substrate TS in the opposite direction to the first direction (-X direction).

[0030] Figure 19 is a cross-sectional view showing a semiconductor device manufacturing apparatus according to this embodiment. As shown in Figure 19, the semiconductor device manufacturing apparatus 50 may include a device G1 that can adsorb, hold, and transport a workpiece 30 from its lower surface, and a device G4 that adsorbs and holds the upper surface of the workpiece 30 and has a pressure unit PB that applies a force to the workpiece 30 in a first direction (X direction). After applying an external force in the first direction (X direction) to the growth substrate TS by the pressure unit PB while the upper and lower surfaces of the workpiece 30 are adsorbed and held, the selected element group SG is detached from the growth substrate TS by separating the upper and lower surfaces of the workpiece while still adsorbing and holding them. In Figure 19, an external force in the first direction (X direction) is applied to the growth substrate TS, but this is not the only example. An external force in the first direction (X direction) may also be applied to the support substrate MS.

[0031] Figure 20 is a cross-sectional view showing a semiconductor device manufacturing apparatus according to this embodiment. As shown in Figure 20, the semiconductor device manufacturing apparatus 50 may include a device G1 that can adsorb, hold, and transport the workpiece 30 from its lower surface, and a device G5 that moves in a first direction (X direction) while adsorbing and holding the upper surface of the workpiece 30. In the semiconductor device manufacturing apparatus 50, while the upper and lower surfaces of the workpiece 30 are adsorbed and held, the device G5 moves a minute amount in the first direction (X direction), and the device G1 moves a minute amount in the opposite direction of the first direction (-X direction), and then the upper and lower surfaces of the workpiece are separated while still adsorbed and held, thereby peeling the selected element group SG from the growth substrate TS.

[0032] Figures 21 and 22 are plan views showing the configuration of a semiconductor substrate according to this embodiment. Figure 23 is a cross-sectional view of Figures 21 and 22. As shown in Figures 21 to 23, in a semiconductor substrate 10 including a growth substrate and a semiconductor element, an element SL including a wing portion F (one wing) of a semiconductor layer 8 includes an anode EA and a cathode EC, and the element SL may be held on the growth substrate (template substrate) TS via a tether portion TZ located on the seed region SA. In this case, the element SL can be separated from the growth substrate TS by cutting (breaking) the boundary CL between the tether portion TZ and the wing portion F (one wing) and the functional layer 9 superimposed thereon using the semiconductor element manufacturing method according to this embodiment. The element SL may be a light-emitting diode (LED). The tether portion TZ may be provided as a single unit in the center (Figure 21), or as a plurality of units spaced apart (Figure 22). In the semiconductor substrate 10 shown in Figures 21 to 23, the tether portion TZ is formed by patterning (partially removing by dry etching, etc.) the region located on the seed region SA of the semiconductor layer 8 and the functional layer 9 superimposed thereon.

[0033] Figures 24 and 25 are cross-sectional views showing the configuration of a semiconductor substrate according to this embodiment. As shown in Figure 24, a gap VS may be provided between the wing portion F (one wing) of the semiconductor layer 8 and the growth substrate TS. In the semiconductor substrate 10 of Figure 24, the underlayer 4 is formed in a ridge shape, and the side surface of the underlayer 4 is covered with a mask portion 5, so that the wing portion F of the semiconductor layer 8 can be grown laterally while floating away from the growth substrate TS.

[0034] Using the semiconductor device manufacturing method according to this embodiment, an element SL comprising a semiconductor layer 8 (including both wings) and a functional layer 9 overlapping thereon may be obtained from the semiconductor substrate 10 of Figure 24, or an element SL comprising a wing portion F and a functional layer 9 overlapping thereon may be obtained. After forming a tether structure as shown in Figures 21 and 22 (a structure in which the semiconductor layer 8 and functional layer 9 on the seed region SA are patterned), the element SL may be separated from the growth substrate TS.

[0035] As shown in Figure 25, a gap VS may be provided between the wing portion F (one wing) of the semiconductor layer 8 and the growth substrate TS. In the semiconductor substrate 10 of Figure 25, after continuously forming ridge-like raised portions R (e.g., GaN-based semiconductor portions) and a growth-inhibiting film 7 (e.g., silicon nitride film) in contact with the raised portions R on the growth substrate TS, the wing portion F of the semiconductor layer 8 (nitride semiconductor layer) can be grown laterally while floating away from the growth substrate TS. In the growth substrate TS (template substrate) of Figure 25, a modified region 4D and an unmodified region 4S are formed in the base layer 4, with the unmodified region 4S functioning as a seed region SA and the modified region 4D functioning as a growth-inhibiting region (unseeded region) DA. The modified region 4D can be formed by applying plasma treatment or the like to the base layer 4 (e.g., AlN layer).

[0036] Using the semiconductor device manufacturing method according to this embodiment, an element SL comprising a semiconductor layer 8 (including both wings) and a functional layer 9 overlapping thereon may be obtained from the semiconductor substrate 10 shown in Figure 25, or an element SL comprising a wing portion F and a functional layer 9 overlapping thereon may be obtained. After forming a tether structure as shown in Figures 21 and 22 (a structure in which the semiconductor layer 8 and functional layer 9 on the seed region SA are patterned), the element SL may be separated from the growth substrate TS.

[0037] (Appendix) The foregoing disclosures are for illustrative and explanatory purposes only, and not for limitation. Many variations will be obvious to those skilled in the art based on these examples and descriptions, and therefore, these variations are also included in the embodiments. [Explanation of symbols]

[0038] 1 Main board 4 Base layer 5 Mask section 6 Mask Patterns 8 Semiconductor layer 30 Work 50 Semiconductor device manufacturing equipment K opening B base F Wing Section J joint H Handa SG Selection Element Group G1~G5 equipment PA / PC Pad Electrodes SL element SA Seed Region MS support board TS growth substrate

Claims

1. A process of bonding multiple elements, each containing a semiconductor layer grown on a growth substrate, to the surface of a support substrate, A step of applying an external force to the back surface of one of the growth substrate and the support substrate such that the pressure distribution is non-uniform in the plane, A method for manufacturing a semiconductor element, comprising the step of peeling off the plurality of elements to be bonded to the support substrate from the growth substrate.

2. A method for manufacturing a semiconductor element according to claim 1, wherein the pressure distribution is changed over time.

3. A method for manufacturing a semiconductor element according to claim 1, wherein the plurality of elements are tilted relative to the growth substrate by the external force, and the bonding portion with the growth substrate is broken.

4. A method for manufacturing a semiconductor element according to claim 1, wherein an external force is applied to the back surface of the growth substrate and the other support substrate such that the pressure distribution is uniform in plane and does not change over time.

5. The method for manufacturing a semiconductor element according to claim 1, wherein the growth substrate and the support substrate are rigid substrates.

6. The growth substrate includes a plurality of seed regions arranged in a stripe pattern in the first direction, A method for manufacturing a semiconductor element according to claim 1, wherein each of the plurality of elements is connected to the plurality of seed regions.

7. The method for manufacturing a semiconductor element according to claim 6, wherein the plurality of elements are formed spaced apart in the first direction.

8. The method for manufacturing a semiconductor element according to claim 6, wherein the pressure distribution changes in the first direction.

9. The method for manufacturing a semiconductor element according to claim 6, wherein a plate tilted by a predetermined positive angle around an axis perpendicular to the first direction is pressed against the back surface of one of the growth substrate and the support substrate.

10. A method for manufacturing a semiconductor element according to claim 9, wherein a plate tilted by a predetermined positive angle is pressed against the back surface of one of the growth substrate and the support substrate, and then a plate tilted by a predetermined negative angle is pressed against it.

11. The method for manufacturing a semiconductor element according to claim 9, wherein the predetermined positive angle is 1° to 3°.

12. A method for manufacturing a semiconductor element according to claim 6, wherein a roller pressed against the back surface of one of the growth substrate and the support substrate is moved in the first direction.

13. The growth substrate includes a mask portion located between the plurality of seed regions, A method for manufacturing a semiconductor element according to claim 6, wherein the plurality of elements are peeled off from the growth substrate without removing the mask portion.

14. The method for manufacturing a semiconductor element according to claim 1, wherein the plurality of elements are selectively bonded to the support substrate from among the group of elements located on the growth substrate.

15. A semiconductor device manufacturing apparatus for peeling off a plurality of devices, each containing a semiconductor layer grown on a growth substrate, from the growth substrate, A semiconductor device manufacturing apparatus that applies an external force to the back surface of one of the support substrates and the growth substrates that support the plurality of elements, such that the pressure distribution is non-uniform in the plane.

16. The semiconductor device manufacturing apparatus according to claim 15, wherein the pressure distribution is changed over time.

17. The system comprises a plate and a drive mechanism for the plate, The semiconductor device manufacturing apparatus according to claim 16, wherein the drive mechanism presses the plate tilted in the positive direction relative to the back surface against the back surface, and then presses the plate tilted in the negative direction relative to the back surface against the back surface.

18. The system comprises a roller and a drive mechanism for the roller, The semiconductor device manufacturing apparatus according to claim 16, wherein the drive mechanism rotates the roller while pressing it against the back surface of one of the growth substrate and the support substrate.

19. The semiconductor device manufacturing apparatus according to claim 18, further comprising a workpiece moving mechanism for moving the growth substrate and the support substrate in a direction corresponding to the rotation direction of the roller.

20. A process of bonding multiple elements, each containing a semiconductor layer grown on a growth substrate, to the surface of a support substrate, The process of applying an external force to the growth substrate in a first direction perpendicular to the substrate thickness direction, A method for manufacturing a semiconductor element, comprising the step of peeling off the plurality of elements to be bonded to the support substrate from the growth substrate.

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