Power semiconductor device testing equipment

Abstract

To accurately measure the characteristic change and deterioration characteristic of a semiconductor element in a test of the semiconductor element.SOLUTION: A coil 502 has an inductive reactance value set with a shorting plug 501, and a capacitive reactance value set with a switch SC. A DA converter circuit 508a generates an on-voltage V1, and a DA converter circuit 508b generates an on-voltage V2 with higher potential than the on-voltage V1. A switching circuit 605 selects the on-voltage V1 or the on-voltage V2 and applies it to a gate terminal of a transistor 117. When the V1 voltage is applied, a test current Id is applied. When the V2 voltage is applied, a constant current Ic is applied, and a voltage between channels Vi of the transistor 117 is measured. Thermal information Tj on the transistor 117 is obtained from the voltage Vi, and a characteristic change and deterioration characteristic of a semiconductor element are obtained.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an electrical element test apparatus for performing a power cycle test on electrical elements such as SiC transistors, IGBTs, GaN transistors, MOS-FETs, bipolar transistors, potistors, thermistors, and resistance elements, a semiconductor element, a test method for electrical elements, and the like. Particularly, it relates to a test apparatus and a test method for semiconductor elements, and an evaluation apparatus and an evaluation method for semiconductor elements.

[0002] The present invention provides a test apparatus for semiconductor elements and the like, and a test method for semiconductor elements, which can efficiently reproduce stress close to the failure mode in the actual use environment and actual use state of semiconductor elements and the like, and can evaluate and test power semiconductor elements and the like with high accuracy.

Background Art

[0003] The life of a power semiconductor element includes the life due to the thermal fatigue phenomenon caused by the heat generation of the power semiconductor element itself and the life due to the thermal fatigue phenomenon caused by the temperature change of the external environment of the power semiconductor element. In addition, there is a life due to voltage fatigue caused by the applied voltage to the gate insulating film of the power semiconductor element.

[0004] Generally, in the life test of a power semiconductor element, the power semiconductor element is repeatedly energized and turned off. A voltage is applied to the emitter terminal (source terminal), collector terminal (drain terminal), etc. of the power semiconductor element, a test current is passed, and a periodic on / off signal (operation / non-operation signal) is applied to the base terminal (gate terminal) to conduct a test on the semiconductor element.

[0005] The current applied to the semiconductor element during the test is as large as several hundred amperes. Therefore, low-resistance connection wiring etc. is required to avoid heat generation and voltage drop. Also, there are many types of tests, and it is necessary to change the connection of the connection wiring according to the type of test. It took a long time to change the connection wiring etc.

Prior Art Documents

[0006] [Patent Document 1] Japanese Patent Publication No. 2017-17822 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] To test semiconductor devices such as transistors, a constant current of several hundred amperes or more is applied. The degradation characteristics of the transistor are determined by the change in temperature information Tj. The temperature information Tj of the transistor is measured by applying a predetermined constant current to the transistor.

[0008] A predetermined gate (base) voltage is applied to the gate (base) of the transistor, and a large test current Id is applied to the transistor. While the transistor maintains its heat generation, a predetermined constant current Ic is applied to measure the temperature information Tj, and the inter-channel voltage of the transistor is measured.

[0009] When measuring temperature information Tj, there was a problem in that accurate temperature information Tj could not be obtained from the inter-channel voltage of the transistor due to the inter-channel resistance of the transistor, etc.

[0010] Furthermore, while avalanche testing requires adjustment and setting of the inductance of the coils in the additional circuit, there was a problem in that it was difficult to set the inductance to match that of the actual circuit. [Means for solving the problem]

[0011] The semiconductor device testing apparatus of the present invention comprises a current generation circuit that generates a large test current to flow through a transistor, a constant current circuit that generates a constant current to obtain temperature information Tj of the transistor, and a gate drive circuit that outputs a first gate voltage applied to the gate of the transistor when a test current Id is applied to the transistor, a second gate voltage applied to the gate of the transistor when a constant current Ic is applied to the transistor, and a third voltage that turns off the transistor.

[0012] A first gate voltage is applied to the gate of the transistor, and a test current Id is applied to the transistor. When measuring the temperature information Tj of the transistor, a second gate voltage higher than the first gate voltage is applied, and during the period when a constant current Ic is applied to the transistor, a voltage higher than the voltage applied during the test period, or a voltage measured at the temperature coefficient K, is applied to the gate terminal or base terminal of the transistor.

[0013] Furthermore, the semiconductor testing apparatus of the present invention comprises a first DA converter circuit that generates a first voltage, a second DA converter circuit that generates a second voltage, a selection circuit that selects the first voltage and the second voltage and applies them to a semiconductor element, a first power supply circuit that supplies a first current to the semiconductor element, a second power supply circuit that supplies a second current to the semiconductor element, and a voltage acquisition circuit that acquires the terminal voltage of the semiconductor element.

[0014] The second voltage is higher than the first voltage, and the terminal voltage is obtained while the first current is applied to the semiconductor element when the first voltage is applied, and the second current is applied to the semiconductor element when the second voltage is applied.

[0015] Furthermore, in the semiconductor testing apparatus of the present invention, the inductive reactance value of coil 502 is set by a short-circuit plug 501, and the capacitive reactance value is set by switch SC. DA converter circuit 508a generates an on-voltage V1, and DA converter circuit 508b generates an on-voltage V2 that is higher in potential than on-voltage V1. Switching circuit 605 selects on-voltage V1 and on-voltage V2 and applies them to the gate terminal of transistor 117. When voltage V1 is applied, a test current Id is applied. When voltage V2 is applied, a constant current Ic is applied and the inter-channel voltage Vi of transistor 117 is measured. Temperature information Tj of transistor 117 is obtained from voltage Vi, and the characteristic changes and degradation characteristics of the semiconductor element are obtained.

[0016] Temperature sensors are placed or mounted near the terminals of semiconductor devices, and temperature information from these sensors is monitored. When testing semiconductor devices, the temperature sensor information is taken into consideration when measuring the inter-channel voltage of the semiconductor devices. Temperature sensors are placed or attached to the connecting structure and conductive plate, and temperature information from the temperature sensors is monitored. [Effects of the Invention]

[0017] By turning on the transistor and applying a constant current Ic between its channels, the voltage between the transistor channels is measured. This allows for accurate acquisition of the transistor's temperature information Tj without generating heat.

[0018] This system allows for appropriate testing by monitoring the terminal voltage of semiconductor elements such as transistors using temperature sensors. Furthermore, it enables avalanche testing under conditions close to actual product use, resulting in excellent reliability testing. [Brief explanation of the drawing]

[0019] [Figure 1] This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention. [Figure 2] This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention. [Figure 3]It is an explanatory diagram of a semiconductor element test apparatus and a test method of the present invention. [Figure 4] It is an explanatory diagram of a semiconductor element test apparatus and a test method of the present invention. [Figure 5] It is an explanatory diagram of a semiconductor element test apparatus and a test method of the present invention. [Figure 6] It is an explanatory diagram of a semiconductor element test apparatus and a test method of the present invention. [Figure 7] It is a block diagram and an explanatory diagram of a semiconductor element test apparatus of the present invention. [Figure 8] It is a block diagram and an explanatory diagram of a semiconductor element test apparatus of the present invention. [Figure 9] It is a block diagram and an explanatory diagram of a semiconductor element test apparatus of the present invention. [Figure 10] It is a block diagram and an explanatory diagram of a semiconductor element test apparatus of the present invention. [Figure 11] It is an explanatory diagram and a configuration diagram of a heat pipe portion of a semiconductor element test apparatus of the present invention. [Figure 12] It is an explanatory diagram and a configuration diagram of a heat pipe portion of a semiconductor element test apparatus of the present invention. [Figure 13] It is an explanatory diagram and a configuration diagram of an attachment portion of a semiconductor element of a semiconductor element test apparatus of the present invention. [Figure 14] It is an explanatory diagram and a configuration diagram of an attachment portion of a semiconductor element of a semiconductor element test apparatus of the present invention. [Figure 15] It is an explanatory diagram and a configuration diagram of an attachment portion of a semiconductor element of a semiconductor element test apparatus of the present invention. [Figure 16] It is an explanatory diagram and a configuration diagram of an attachment portion of a semiconductor element of a semiconductor element test apparatus of the present invention. [Figure 17] It is an explanatory diagram and a configuration diagram of an attachment portion of a semiconductor element of a semiconductor element test apparatus of the present invention. [Figure 18] It is an explanatory diagram and a configuration diagram of an attachment portion of a semiconductor element of a semiconductor element test apparatus of the present invention. [Figure 19] It is an explanatory diagram and a configuration diagram of an attachment portion of a semiconductor element of a semiconductor element test apparatus of the present invention. [Figure 20] This is an explanatory diagram and configuration diagram of the semiconductor element mounting section of the semiconductor element testing apparatus of the present invention. [Figure 21] This is a block diagram and explanatory diagram of the circuit section of the semiconductor device testing apparatus of the present invention. [Figure 22] These are explanatory diagrams and configuration diagrams of the semiconductor device testing apparatus of the present invention. [Figure 23] These are explanatory diagrams and configuration diagrams of the semiconductor device testing apparatus of the present invention. [Figure 24] These are explanatory diagrams and configuration diagrams of the test method for semiconductor devices according to the present invention. [Figure 25] These are explanatory diagrams and configuration diagrams of the semiconductor device testing apparatus of the present invention. [Figure 26] These are explanatory diagrams and configuration diagrams of the semiconductor device testing apparatus of the present invention. [Figure 27] These are explanatory diagrams and configuration diagrams of the semiconductor device testing apparatus of the present invention. [Figure 28] These are explanatory diagrams and configuration diagrams of the semiconductor device testing apparatus of the present invention. [Figure 29] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 30] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 31] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 32] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 33] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 34] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 35] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 36] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 37] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 38] This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 39]This is an explanatory diagram of the test method for semiconductor devices according to the present invention. [Figure 40] This is an explanatory diagram of a semiconductor device. [Modes for carrying out the invention]

[0020] The following describes an electrical element testing apparatus and testing method according to an embodiment of the present invention, with reference to the attached drawings. In the embodiments described in this specification, IGBTs will be used as the primary example among power semiconductor elements used as electrical elements.

[0021] The present invention is not limited to IGBTs and can be applied to various semiconductor devices such as SiC transistors, MOSFETs, JFETs, GaN transistors, thyristors, diodes, thermistors, and positors.

[0022] Furthermore, the present invention is not limited to semiconductor elements, but can also be applied to non-semiconductor electrical elements such as resistors, capacitors, coils, crystal elements, and ZNRs.

[0023] In each drawing illustrating a mode for carrying out the invention, elements having the same function or similarity shall be denoted by the same reference numeral. Matters unnecessary for explanation shall be omitted from the drawings. Furthermore, drawings and other diagrams may be simplified or schematic to facilitate explanation. Explanations may also be omitted in the specification.

[0024] The embodiments of the present invention can be combined in part or in whole with the embodiments described herein and in the drawings. They can also be combined or implemented with some modifications or alterations.

[0025] Figure 8 is a configuration diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention. As shown in Figure 8, the semiconductor device testing apparatus of the present invention has a housing 210, a chiller (cooling / heating device) 136, a heating / cooling plate 134, and a circulating water pipe 135 that circulates water between the heating / cooling plate 134 and the chiller 136. The transistor 117 to be tested is placed on the heating / cooling plate 134 in close contact with the heating / cooling plate 134. In addition, a temperature sensor 521 is brought into contact with or placed on the semiconductor device 117 to measure or monitor the temperature of the semiconductor device 117.

[0026] The coil 502 is exemplified by the configuration shown in Figure 10. The coil 502 is a plate-shaped spring. A short-circuit plug 501 is installed in the middle of the coil 502 to adjust its inductance. The short-circuit plug 501 has a configuration similar to or identical to the fork plug in Figure 17(b). The section between short-circuit plug 501a and short-circuit plug 501b functions as the coil 502. The inductive reactance of the short-circuit plug 501 can be set to any value by adjusting its position. Furthermore, the temperature sensor 521 is brought into contact with or positioned on the short-circuit plug 501 to measure or monitor the temperature of the semiconductor element 117.

[0027] The short-circuit plug 501 may have a configuration similar to or identical to the connection structure 218 and the connection receiving portion 225 and connection holding portion 233 of the connection structure 218 shown in Figure 15, etc.

[0028] A temperature sensor 521 is placed or attached to the short-circuit plug 501. Large currents may flow through the contact area (contact area 220, etc.) between the short-circuit plug 501 and the coil 502, and heat generation is likely to occur due to contact resistance. If the heat generation exceeds a specified level, the test device is stopped as a contact failure, and the contact condition is checked or inspected.

[0029] If the temperature output by the temperature sensor 521 does not change during the test, there is a possibility of poor contact between the coil 502 and the shorting plug 501. There is a possibility that the contact part 220 and the coil 502 are not making contact and are electrically insulated. In this case as well, the test equipment should be stopped as a contact problem and the contact condition should be checked or inspected.

[0030] In Figure 10, the surface of coil 502 is not insulated, and a conductive part made of copper or the like is exposed. Therefore, at any point on coil 502, an electrical connection can be made between the short-circuit plug 501 and any point on coil 502. By changing the positions of short-circuit plugs 501a and 501b, the coil capacitance (inductive reactance) of coil 502 can be varied or set. It is preferable to plate the surface of coil 502 with tin plating, zinc plating, silver plating, gold plating, etc.

[0031] As shown in Figure 10(a), the connecting wire 211 and the shorting plug 501 are attached. The connecting wire 211 and the shorting plug 501 are bolted together with a connecting bolt 219.

[0032] Figure 10(b) shows a cross-section of the contact area between the short-circuit plug 501 and the coil 502 in Figure 10(a). As shown in Figure 10(b), electrical connection is achieved by mechanically fitting the short-circuit plug 501 and any part of the coil 502 together.

[0033] When the U-shaped portion of the short-circuit plug 501 is inserted into the coil 502, the U-shaped portion of the short-circuit plug 501 expands slightly or makes proper contact, so that the short-circuit plug 501 and the coil 502 are electrically connected (joined) well.

[0034] The coil 502 is housed in a shield case 503, and the shield case 503 is conductive. The shield case 503 is grounded or otherwise fixed at a predetermined potential.

[0035] The coil 502 and the short-circuit plug 501 make contact at contact portions 220a and 220b formed on the short-circuit plug 501. The contact portions 220 are made of phosphor bronze or nickel alloy and have spring properties. The surface of the contact portions 220 is gold-plated or silver-plated. The plating improves the electrical stability of the connection portion 220.

[0036] As shown in Figure 9, the short-circuit plug 501 is inserted through the opening 216 of the partition wall 214. The partition wall 214 has multiple openings 216 formed or configured to allow adjustment of the inductive reactance of the coil 502. Electrical connection is made by inserting the short-circuit plug 501 into the openings 216. By making the spacing between the openings 216 short, the inductive reactance value can be adjusted finely and with high precision.

[0037] Figure 9 shows the arrangement of each component of the semiconductor device testing apparatus of the present invention. The housing 210 of the semiconductor device testing apparatus has multiple parts. The lower part of the housing is separated into chamber A and chamber B. The power supply unit 132 is located in chamber A. Chamber A and chamber B are separated by a partition wall 215. Chamber C1 and chamber C2 are separated by a partition wall 217.

[0038] The power supply unit 132 contains a constant current circuit 121, a voltage generation circuit 509, a switch circuit board 201, and the like. The power supply unit 132, the switch circuit board 201, and the transistor 117 generate significant noise through repeated operation / deactivation cycles. This noise can cause malfunctions in the circuit board and other components. It also contributes to noise in the gate control signal Vsg of the transistor 117. Malfunctions can be prevented by electrostatic and electromagnetic shielding the partitions between each compartment.

[0039] Electrostatic shielding and electromagnetic shielding are achieved by attaching or forming conductive plates, conductive sheets, conductive films, metal plates, metal films, or wire mesh around each room, on the surface of the partition walls, or inside them.

[0040] The semiconductor testing apparatus of the present invention has chambers C1 and C2 located at the top of the apparatus, and chambers A and B located at the bottom of the apparatus. The power supply unit 132 is located in chamber A, and the circuit system, such as the switch circuit board, is located in chamber B. The cooling plate and the like are located in chamber C1, and the connection structure and the like are located in chamber C2.

[0041] Chamber C1 contains a heating / cooling plate 134, a circulating water pipe 135, etc., as shown in Figure 8, and electrical components such as the transistor 117 to be tested are placed in close contact with the heating / cooling plate 134. By placing the transistor 117 in close contact with the heating / cooling plate, the transistor 117 and other components are maintained at a predetermined temperature for the duration of the test.

[0042] A leak sensor (not shown) is positioned around the heating and cooling plate in chamber C1. If circulating water (cooling medium) or other fluids leak, the leak sensor will activate, shutting down the semiconductor device testing equipment or triggering an alarm.

[0043] A drainage groove (not shown) is formed around the heating / cooling plate 134. When circulating water (cooling medium) leaks from the heating / cooling plate, it flows into the drainage groove and is discharged outside the semiconductor device testing apparatus. The heating and cooling plate 134 is mounted on a tray (not shown), and the tray is configured to be detachable from the partition wall 214.

[0044] Therefore, the partition wall 214 is configured to prevent circulating water (cooling medium) from leaking into the lower chambers A and B even if the circulating water pipe 135 or the like is damaged. If a leak occurs, the power supply unit 132 stops generating voltage and current.

[0045] A water leak sensor (not shown) is positioned around the heating and cooling plate 134 in chamber C1. The system is configured to activate the water leak sensor if circulating water (cooling medium) or other fluids leak, thereby stopping the semiconductor device testing equipment or issuing an alarm.

[0046] A partition wall 215 is formed between Room A, where the power supply unit 132 is located, and Room B, where the drive circuit system is located. An electrostatic shielding plate (electrostatic shielding sheet) or an electromagnetic shielding plate (electromagnetic shielding sheet) is placed on the partition wall 215 to shield or suppress noise from the power supply unit 132, so that the noise is not applied to the drive circuit system in Room B. The bulkhead 214 has openings 216 into which fork plugs 205 and short-circuit plugs 501 are inserted.

[0047] In this embodiment of the present invention, a fork plug 205 is inserted from chamber C2 and connected to the conductor plate 204 in chamber B. A short-circuit plug 501 is inserted from chamber C2 and connected to the coil 502 in chamber B.

[0048] In this embodiment of the present invention, the fork plug 205 and the short-circuit plug 501 are inserted from the top to the bottom. However, the present invention is not limited thereto. For example, a conductor plate 204 may be placed in chamber C2, and the fork plug 205 may be inserted from chamber B to electrically connect the fork plug 205 and the conductor plate 204.

[0049] As shown in Figure 17(c), a connector 213 is attached to the motherboard 207. The controller circuit board 111, the device control circuit board 209, and the switch circuit board 201 are attached to the connector 213 on the motherboard 207.

[0050] Prepare the switch circuit board 201 according to the number of transistors 117 to be tested. The number of switch circuit boards 201 can be easily changed by changing the number of switch circuit boards 201 mounted on the motherboard 207.

[0051] Multiple transistors and other components are mounted on the switch circuit board 201 as switch circuits 124. The more switch circuits 124 there are, the smaller the impedance that short-circuits the two conductor boards 204. The number of switch circuits 124 mounted on the switch circuit board 201 is determined so that the on-resistance of each switch circuit 124 is smaller than the on-resistance of the transistor 117 being tested.

[0052] The motherboard 207 receives temperature information Tj, voltage Vi, control signals for the variable resistor circuit 125, and control signals for the constant current circuit 118. Power and ground wiring for each circuit are also formed and supplied to each circuit board via connector 213.

[0053] As shown in Figure 17(c), the conductor plate 204 is positioned so as to protrude from the switch circuit board 201. The fork plug 205 is connected to this protruding portion.

[0054] A gold plating film is formed on the surface of the switch circuit board 201 in the areas that come into contact with or are connected to the conductor plate 204. The switch circuit board 201 and the conductor plate 204 are fastened together with screws or bolts to ensure good contact between them. The switch circuit board 201 and the conductor plate 204 are pressed together to maintain good electrical contact.

[0055] The fork plug 205a is connected to the conductor plate 204a of the switch circuit board 201a. The power wiring 212 is connected to the switch circuit board 201a through the opening 216 of the partition wall 215.

[0056] Figures 18, 19, and 20 are explanatory diagrams illustrating a configuration for stably maintaining the connection between the fork plug 205 and the conductor plate 204, etc., in a configuration in which the fork plug 205 is electrically connected to the conductor plate 204.

[0057] As shown in Figure 18, the mounting plate 510 is attached to the partition wall 214, or is arranged or configured as the partition wall 214. The signal line insertion portion 512 of the mounting plate 510 is for connecting the signal wiring 222, the signal wiring 235, and the connector 213.

[0058] As shown in Figure 19, the mounting plate 510 has multiple insertion holes 514 for inserting the fork plug 205. Additionally, screw holes 516 are formed or configured for fixing the mounting plate 510 to the fixing plate 511.

[0059] As shown in the figure, the fixing plate 511 also has multiple fixing holes 515 for inserting and fixing the fork plug 205. In addition, mounting holes 517 for fixing the mounting plate 510 and the fixing plate 511 are formed, arranged, or configured.

[0060] As shown in Figures 17 and 18, a temperature sensor 521 is attached to the fork plug 205a, etc. Examples of temperature sensors 521 include a digital temperature sensor IC and an analog temperature sensor IC. The temperature sensor 521 detects the overheating state of the fork plug 205, etc. Based on the output data from the temperature sensor 521, the controller 111 stops the test or increases or decreases the test current Id.

[0061] The temperature sensor 521 measures the temperature change when there is a poor connection between the conductor plate 204 and the fork plug 205, or between the semiconductor terminal and the connecting structure 218, etc., and heat is generated at the contact points, etc. The temperature sensor 521 sends the temperature data to the control circuit 133, which controls the stopping or continuing of the semiconductor element test. The temperature sensor 521 is placed or attached near the contact points between the connecting structure 218, the conductor plate 204 and the fork plug 205, etc.

[0062] The output data from the temperature sensor 521 is used to determine the test conditions, control changes, and test methods of the test apparatus of the present invention by comparing it with temperature information Tj, terminal voltage Vi, temperature information change amount △Tj, and terminal voltage change amount △Vi.

[0063] For example, if the rate of change of the temperature sensor 521 is large compared to the change in temperature information △Tj and the change in terminal voltage △Vi, there may be a problem with the connection between the fork plug 205 and the connection structure 218. If the rate of change of the temperature sensor 521 is significantly small compared to the change in temperature information △Tj and the change in terminal voltage △Vi, there may be a disconnection at the connection between the fork plug 205 and the connection structure 218.

[0064] Examples of temperature sensors 521 include resistance thermometers that utilize the fact that the electrical resistance of a metal changes approximately in proportion to temperature, thermocouple sensors that connect two different metals and utilize the electromotive force generated by the temperature difference between the two contacts, pressure thermometers that utilize the expansion and contraction of liquids and gases due to temperature changes, and thermistors, a type of resistance thermometer that measures temperature by utilizing the change in electrical resistance of oxides. Alternatively, a radiation thermometer that measures temperature by measuring the intensity of infrared radiation emitted from a substance may also be used.

[0065] The temperature sensor 521 continuously or periodically measures the temperature of the installation area, and the measured temperature data is transmitted to the controller 111. Based on the temperature data, the controller 111 performs testing methods for semiconductor elements 117, etc., and sets, changes, and controls the semiconductor testing equipment.

[0066] It is preferable to also place or form the temperature sensor 521 in the connection pressure section 232, connection holding section 233, etc., as illustrated and explained in Figure 15, etc. It is also preferable to connect or place it on the conductive plate 204, as shown in Figure 7. It is also preferable to connect or place it on or near the semiconductor element 117, as shown in Figure 1. It is also preferable to connect or place it on or near the connection structure 218, as shown in Figure 11.

[0067] If, after the test has started and the test current has been supplied to the semiconductor element, there is no temperature change in the temperature data output by the temperature sensor 521, the control circuit 133 will determine that there is a connection abnormality (the semiconductor device is not connected) and will control whether to stop or continue the test of the semiconductor element.

[0068] Alternatively, if, after the test has started and a test current has been supplied to the semiconductor element, the temperature information Tj and the terminal voltage Vi do not change, the control circuit 133 will determine that there is a connection abnormality (e.g., the semiconductor device is not connected) and will control the system to stop the test of the semiconductor element. The above also applies to the temperature data from the temperature sensor 521.

[0069] The fork plug 205 consists of a fork plug 205a, which is the tip, and a fork plug 205b, which is the extension. The fork plug 205a and the extension fork plug 205b are integrally constructed using screws (not shown) or the like.

[0070] A groove 518 is formed between the fork plug 205a and the fork plug 205b. A fixing plate 511 is inserted into this groove 518, and the mounting plate 310 and the fixing plate 511 are integrated with fixing screws 224. The fixing plate 511 also secures the fork plug 205 to the conductor plate 504 so that it does not come off.

[0071] As shown in Figure 18(a), the tip of the fork plug, the fork plug 205a, is inserted into the insertion hole 514 of the mounting plate 510. At the same time, the tip of the fork plug 205a is brought into contact with the conductor plate 204, thereby establishing an electrical connection between the fork plug 205a and the conductor plate 204.

[0072] Figure 20(a) is an explanatory diagram showing the state in which the fork plug 205a is inserted into the mounting plate 510 and the fork plug 205a and conductive plate 504 (not shown) are integrated. Multiple fork plugs 205a are inserted into the insertion hole 514 simultaneously.

[0073] Next, as shown in Figure 18(b), the fixing plate 511 is positioned so that the fixing hole 515 and the insertion hole 514 are aligned, and adjusted so that the fork plug 205 and the conductive plate 204 are securely fixed.

[0074] Next, as shown in Figure 18(c), the fixing plate 511 is slid and adjusted so that one side of the fixing hole 515 of the fixing plate 511 is inside the groove 518 of the fork plug 205. After adjustment, the fixing screw 224 is inserted into the screw hole 516, and the mounting plate 310 and the fixing plate 511 are integrated with the fixing screw 224. The fixing plate 511 also holds down the fork plug 205, fixing the fork plug 205 to the conductor plate 504.

[0075] Figure 20(b) is an explanatory diagram showing the state in which fork plugs 205a are inserted into the mounting plate 510 and the fixing plate 511, and the fixing plate 511 is slid so that one side of the fixing hole 515 of the fixing plate 511 is inside the groove 518 of the fork plug 205. By sliding the fixing plate 511, multiple fork plugs 205a are fixed simultaneously. Therefore, multiple fork plugs 205a can be easily fixed.

[0076] The configurations in Figures 17, 18, and 20 were described as examples of inserting the fork plug 205 horizontally, but the model is not limited to this. It goes without saying that the model can also be applied when inserting the fork plug 205 and shorting plug 501 vertically, as shown in Figures 9 and 10. Furthermore, it is also useful when inserting the fork plug 205 and shorting plug 501 from below upwards.

[0077] Large currents flow through the fork plug 205 and shorting plug 501 during testing. This current causes vibration and sliding in the fork plug 205 and shorting plug 501. Fixing them with mounting plate 510 and fixing plate 511 is useful for semiconductor testing equipment. When vibration and sliding occur, temperature information Tj and terminal voltage Vi cannot be measured or acquired properly.

[0078] In Figures 17, 18, and 20, grooves 518 are formed or configured in the fork plugs 205, connection retaining parts 233, etc., but the design is not limited to this. The grooves 518 can have any configuration or shape as long as they integrate the fixing plate 511, etc. with the partition wall 217, mounting plate 510, etc., and fix multiple fork plugs 205 simultaneously.

[0079] For example, it goes without saying that the fork plug 205, the connection retaining part 233, etc., may be configured to have protrusions (not shown) and to be fixed by pressing the protrusions with the fixing plate 511. As shown in Figure 11, etc., it is preferable to also form or configure the groove 518 in the connection structure 218.

[0080] Significant noise is generated when the switch circuit 124 on the switch circuit board 201 is switched on and off. To counter this, although not shown in Figure 17(c), a metal plate that functions as a shield is placed between the two switch circuit boards 201 and the metal plate is grounded. Alternatively, a metal plate that functions as a shield may be placed on the fixing plate 511 and the mounting plate 510 and the metal plate may be grounded. The fixing plate 511 and the mounting plate 510 may also be made of a material that has a shielding function.

[0081] The heat generated by the switch circuit 124 is dissipated to the conductor plate 204. A heat sink (not shown) is attached to the switch circuit 124. The ground terminal of the switch circuit 124 is connected to the ground of the switch circuit board 201. The heat from the conductor plate 204 is also dissipated through the ground copper foil of the switch circuit board 201.

[0082] In the configurations shown in Figures 9, 11, and 13, the element terminal 226 and the connection retaining part 233 may come loose. Therefore, a groove 518 is formed or configured between the connection retaining part 233 and the heat pipe fitting 231, similar to Figures 18, 19, and 20.

[0083] The fixing plate 511 is slid into the groove 518 in the same manner as in Figure 18(c), and adjusted so that one side of the fixing hole 515 of the fixing plate 511 is inside the groove 518 of the connection holding part 233, etc. After adjustment, a fixing screw (not shown) is inserted into the screw hole (not shown), and the partition wall 217 and the fixing plate 511 are integrated with the fixing screw 2. The fixing plate 511 also holds down the connection holding part 233, etc., and fixes the connection holding part 233, etc. to the element terminal 226.

[0084] With the above mechanism, multiple connection holding parts 233 and other components and element terminals 226 are fixed simultaneously. Therefore, the connection state with multiple element terminals 226 can be easily and stably maintained.

[0085] When performing avalanche tests or the like according to the present invention, the current and voltage applied to or supplied to the semiconductor element 117 change significantly. As a result, the conductor plate 204, fork plug 205, connecting structure 218, and element terminal 226 vibrate in synchronization with the current changes, etc. Consequently, the fork plug 205, connecting structure 218, element terminal 226, etc. may come loose from their connection positions. In this invention, grooves 518 are formed or arranged in the fork plug 205, connecting structure 218, etc., and the fixing plate 511 is inserted into the grooves 518 to fix it in place. To detect when the connection point is disconnected, it is effective to consider the output data of the temperature sensor 521, the temperature information Tj, and the terminal voltage Vi data.

[0086] Figure 11(a) shows an embodiment in which a groove 518 is formed or arranged in the connecting structure 218, and Figures 13 and 14 show an embodiment in which a groove 518 is formed or configured in the connecting structure 218, and a fixing plate 511 or the like is inserted into the groove 518 to fix the connecting structure 218 or to suppress its movement.

[0087] As shown in Figures 7 and 8, the control circuit 133 sets the test conditions by changing the current Id, gate voltage Vsg, and inter-channel voltage Vce(Vi) so that the temperature information Tj of the transistor 117 to be tested reaches a predetermined value, and then performs the test.

[0088] If the temperature information Tj changes or changes to a predetermined value, it is determined that transistor 117 has deteriorated or its characteristics have changed, and the test of transistor 117 is stopped or the control method is changed.

[0089] For example, changes in temperature information Tj can be used to determine or assess changes in the characteristics of transistor 117. Furthermore, the characteristics, reliability, and lifespan of transistor 117 can be evaluated and tested based on factors such as the time it takes for the voltage Vce(Vi) to reach a predetermined voltage and the time until transistor 117 fails. When applying voltage V2 and a constant current Ic, measure, judge, or observe the change in temperature information Tj due to the application of voltage V2. It goes without saying that the above points can also be applied to the output voltage Vi of the operational amplifier (buffer amplifier) ​​116.

[0090] In the semiconductor testing method of the present invention, external conditions are changed in accordance with the degradation or characteristic change of transistor 117. For example, if transistor 117 generates heat, the water temperature is lowered. Lowering the water temperature or reducing the current flowing through transistor 117 prevents the degradation and characteristic change of transistor 117 from progressing, and as a result, the lifespan of transistor 117 is extended. Therefore, the lifespan and reliability characteristics of transistor 117 under predetermined set conditions can be quantitatively measured and judged.

[0091] The temperature of the transistor 117 is maintained at a specified or predetermined value by heating or cooling the circulating water in the chiller 136. Furthermore, the temperature of the transistor and other components is periodically changed, or kept constant, or heated, in accordance with the test conditions. The temperature information Tj of the test transistor is also measured, and the chiller 136 is controlled to maintain the measured temperature information Tj, the inter-channel terminal voltage Vi, etc., at constant values.

[0092] In the embodiments of the present invention, the inter-channel terminal voltage, in the case of transistor 117, is the voltage between the two terminals other than the g terminal. If the element being tested is a two-terminal element such as a diode, it is the voltage between the cathode terminal and the anode terminal. Furthermore, in the test of transistor 117, it is the voltage between terminals c and e in Figure 1, but the test apparatus and test method of the present invention can also be applied to elements other than three-terminal elements such as transistors. In other words, the inter-channel voltage can be any two terminals of the element, as long as they are the voltage between those two terminals.

[0093] Furthermore, even with transistor 117, the measurement is not limited to the voltage between terminal c and terminal e; the voltage between terminal g and terminal c, or between terminal g and terminal e, may also be measured to test or evaluate the electrical components. In this case, the input terminals of the operational amplifier (buffer amplifier) ​​116 are electrically connected to terminal g and terminal c, or terminal g and terminal e. In this case as well, temperature information Tj is obtained from the output voltage Vi of the operational amplifier (buffer amplifier) ​​116.

[0094] The operational amplifier (buffer amplifier) ​​116 is not limited to operational amplifiers (buffer amplifiers); any circuit or configuration that can output an output voltage Vi without being affected by the impedance of the two input terminals may be used.

[0095] The chiller 136 maintains a constant temperature for equipment by circulating water or a heat transfer medium while controlling its liquid temperature. While the chiller 136 is primarily used for cooling, it can also heat. The chiller 136 is configured to allow for various temperature control functions.

[0096] As shown in Figure 8(b), the partition wall 217 has an opening 216 into which the connecting structure 218, which will be explained in Figures 11, 12, 13, 14, 15, etc., is inserted. The partition wall 215 has a hole into which the power wiring 212 is inserted.

[0097] The control rack 131 shown in Figure 8(a), etc., includes a power supply unit 132 that supplies test current and test voltage to the semiconductor element 117, and a control circuit 133 that controls the semiconductor element 117 or sets test conditions.

[0098] The control circuit 133 sets the test conditions by changing the current Id, gate voltage Vg, and voltage Vce so that the temperature information Tj of the semiconductor element 117 reaches a predetermined value, and then performs the test. The control circuit 133 controls the power supply unit 132, which supplies a test voltage or current to the semiconductor element 117 being tested.

[0099] If the temperature information Tj or the terminal voltage Vi changes or changes to a predetermined value, it is determined that the semiconductor element 117 has deteriorated or its characteristics have changed, and the test of the semiconductor module 117 or semiconductor element 117 is stopped, or the test method or control method is changed.

[0100] The temperature of the semiconductor element 117 is maintained at a specified or predetermined value by heating or cooling the circulating water in the chiller 136. Furthermore, the temperature of the semiconductor element is periodically changed, cooled, or heated to a constant level in accordance with the test conditions. The temperature information Tj of the semiconductor element 117 is also measured, and the chiller 136 is controlled to maintain the measured temperature information Tj at a constant value.

[0101] The semiconductor device testing apparatus and semiconductor device testing method of the present invention can accommodate a wide variety of semiconductor devices 117 and semiconductor modules 117, as shown in Figure 40 as an example. The semiconductor device 117 in Figure 40 has terminals P, O, and N to which large currents are applied or output. Figure 40 shows an explanatory diagram and equivalent circuit diagram of a semiconductor element as an example. Figures 40(a1) and (a2) show a configuration with one transistor 117 and a diode Di.

[0102] The semiconductor element 117 tested in the present invention may or may not have a built-in diode. For example, there are three typical structures for IGBTs: (a) punch-through type (PT type), (b) non-punch-through type (NPT type), and (3) thin wafer punch-through type (thin PT type or field-stop type (FS type)).

[0103] More recently, there are (d) reverse-conducting IGBTs (RC-IGBTs) that incorporate a recirculating diode (FWD) like a MOSFET by replacing part of the collector-side P layer of the FS type with N. PT-type IGBTs are a structure that has been used since the early stages of IGBTs, and have a thick P-layer on the collector side, resulting in a large forward voltage in the low-current region. NPT-type IGBTs are a structure developed following PT-type IGBTs, offering high breakdown tolerance and being used in hard switching applications such as inverters. Thin PT-type IGBTs are widely used due to their advanced low-loss structure, which improves the trade-off between forward and switching performance through wafer thinning. RC-IGBTs utilize thin wafer technology and incorporate FRDs in a state-of-the-art structure, primarily being commercialized for voltage resonance applications. The semiconductor testing apparatus of the present invention can perform tests on any of these IGBTs. As an example, the test will be conducted using one of the following settings: 1. Set the rated constant current and on-time, and adjust the water temperature so that the maximum or maximum change in temperature information Tj, Tjmax (ΔTjmax), reaches the target value. 2. Set the water temperature and rated current value, and the Tjmax (ΔTjmax) will reach the target value. 3. Set the water temperature and the on-time of transistor 117, and adjust the current value so that Tjmax (ΔTjmax) reaches the target value. In the semiconductor device testing method of the present invention, as one embodiment, the test is terminated under one of the following conditions. 1. The test will be stopped when Tj exceeds a certain range. 2. The test will be stopped when ΔTj exceeds a certain range. 3. The test is stopped when the inter-channel voltage Vce of transistor 117 exceeds a certain range. 4. The test is stopped when the on-voltage Von of transistor 117 exceeds a certain range.

[0104] Figures 40(b1) and (b2) show a configuration having transistor 117 (transistor 117m, transistor 117s) and diode Di (diode Dim, diode Dis).

[0105] Figures 40(c1) and (c2) show a configuration in which multiple transistors are connected and tested by connecting the terminals of a semiconductor element having a transistor 117 (transistor 117m or transistor 117s) and a diode Di (diode Dim or diode Dis).

[0106] Figure 40(d1)(d2) shows a configuration with transistor 117 (transistor 117m, transistor 117s) and diode D (diode Ds, diode Dm) having terminals independent of the transistor's terminals.

[0107] Figures 40(e1) and 40(e2) show a configuration in which multiple transistors are connected and tested by connecting the terminals of a semiconductor element having a transistor 117 (transistor 117m or transistor 117s) and a diode D (diode Dm or diode Ds) which has terminals independent of the transistor's terminals.

[0108] As shown in Figures 40(d) and 40(e), if a diode D (diode Ds, diode Dm) for obtaining temperature information is configured or formed, a constant current Ic is applied to this diode D.

[0109] In Figure 40, the semiconductor element 117 has a built-in or arranged diode, but it goes without saying that even elements without a built-in or arranged diode can be tested or evaluated with the semiconductor testing apparatus of the present invention. Furthermore, the objects to be tested or evaluated with the semiconductor testing apparatus of the present invention are not limited to transistors, but may also be two-terminal elements such as diodes and positors. They may also be electrical elements such as resistors. In the following embodiments, the semiconductor element 117 shown in Figure 40 will be used as an example for explanation, and will be described in particular as a transistor.

[0110] Figures 1 and 2 are block diagrams and explanatory diagrams of the semiconductor device testing apparatus of the present invention. Figures 1 and 2 show one constant current circuit 121 and one voltage generation circuit 509.

[0111] The constant current circuit 121 and the voltage generation circuit 509 are not limited to one unit each. For example, the semiconductor device testing apparatus of the present invention may have two or more constant current circuits 121 or voltage generation circuits 509. The more constant current circuits 121 etc. are used, the more diverse current waveforms Id or voltages can be generated.

[0112] For example, a constant current circuit 121 that allows setting a maximum (limit) voltage is used. An example is to configure it to output a predetermined constant current at the set maximum voltage under certain conditions. Furthermore, when outputting a constant current, an example is to configure the output terminal voltage to allow setting a predetermined maximum voltage.

[0113] The constant current circuit 121 is described as outputting or supplying a constant current, but is not limited to this. It outputs a predetermined current or voltage, but in this embodiment, for the sake of simplicity, the output current is described as a constant current.

[0114] The constant current circuit 121 outputs a high-current constant current or a predetermined current for testing the transistor 117. The constant current circuit 121 and the like supply power (current, voltage) in synchronization with the control signal from the controller circuit board (controller) 111.

[0115] The switch circuits 122 (switch circuits 122a and 122b) have the function of turning on (supplying, applying) and off (cutting off, opening) the constant current supply output by the constant current circuit 121, and the function of turning on (supplying, applying) and off (cutting off, opening) the constant current supply output by the voltage generation circuit 509.

[0116] In the semiconductor device testing apparatus of the present invention, the constant current circuit 121 and the voltage generation circuit 509 are not limited to one unit. Two or more constant current circuits 121 and voltage generation circuits 509 may be provided.

[0117] The variable capacitance capacitor 505 is composed of multiple capacitors C (referred to as C1, C2, and C3 in Figures 1 and 2). A switch SC (referred to as SC1, SC2, and SC3 in Figures 1 and 2) is formed on or placed on each capacitor C. When switch SC1 is closed, capacitor C1 is connected between the two output terminals of the voltage generation circuit 509.

[0118] When switch SC2 is closed, capacitor C2 is connected between the two output terminals of the voltage generation circuit 509. When switch SC3 is closed, capacitor C3 is connected between the two output terminals of the voltage generation circuit 509.

[0119] The variable capacitance capacitor 505 is electromagnetically or electrostatically shielded by a shielding case 504. The coil 502 is electromagnetically or electrostatically shielded by a shielding case 503. Noise is generated by the current flowing through the variable capacitance capacitor 505 and the coil 502, but this noise is suppressed by the shielding cases 503 and 504. By suppressing noise, noise superimposed on the gate terminal of transistor 117, etc., is suppressed, preventing transistor 117 from malfunctioning.

[0120] Electrostatic shielding and electromagnetic shielding are realized by attaching or forming conductive plates, conductive sheets, conductive films, metal plates, metal films, or wire mesh around the variable capacitance capacitor 505 and coil 502, or on the surface or inside the partition wall. Shield cases 503 and 504 are grounded.

[0121] By turning on (closing) switch circuit 506b, the variable capacitance capacitor 505 is inserted into the test circuit. By turning on (closing) switch circuit 506a, the coil 502 is bypassed. Capacitors C (capacitors C1, C2, and C3) may be connected or selected using a shorting plug 501, etc., similar to the coil 502.

[0122] In the embodiment of the present invention, a fork plug 205 is used as an example of a connecting plug. A fork plug 205 is connected to one end of each connecting wire 211 and each power supply wire 212, such as a fork plug 205e connected to the collector terminal of transistor 117 and a fork plug 205c connected to the emitter terminal of transistor 117, and then connected to a conductor plate 204, etc.

[0123] In this specification and in the drawings, the conductor plate 204 is described as such, but it is not limited to a plate and may be in the shape of a rod. The conductor plate 204 may be a thick sheet. The conductor plate 204 may also be composed of multiple rods or plates. The rods or plates may be circular, flat, polygonal, or any other shape. In addition, the copper foil of the switch circuit board 201 may be made of a thick material and used as the conductor plate.

[0124] Any shape is acceptable as long as it can be connected to a structure such as a fork plug 205. For example, it may be a structure such as a socket or connector. Alternatively, the conductive plate 204 may be shaped like a fork plug, and the fork plug 205 and the fork plug may be connected.

[0125] The present invention may be configured in any way, as long as a fork plug 205 is formed or placed on at least one terminal of the transistor 117 being tested, and an electrical connection is made between the fork plug 205 and the object to be connected, such as a conductor plate 204.

[0126] The short-circuit plug 501 and fork plug 205 are described as being inserted into a component or structure that separates a space, such as a partition wall 214. However, the description is not limited to this. For example, the fork plug 205c may be connected to the conductor plate 204b, and the fork plug 205c may be inserted from partition walls 214 and 215 to electrically connect to one terminal (emitter terminal e) of the transistor 117. Alternatively, a projection terminal (not shown) may be configured on the coil 502, and the projection terminal may be extended from the partition wall 214 to make a connection with the projection terminal.

[0127] The partitions 214, 215, and 217 of the semiconductor device testing apparatus of the present invention may be any form that divides or separates a space or region. A wide variety of configurations or structures are applicable, such as wall-shaped, plate-shaped, mesh-shaped, film-shaped, foil-shaped, etc.

[0128] The fork plug 205 may have any configuration, structure, form, type, or method that allows it to be electrically connected to an object such as a conductor plate 204 by press-fitting, pressure-welding, insertion, crimping, clamping, etc.

[0129] Needless to say, the above points also apply to other embodiments described herein and in the drawings. Furthermore, they can be combined in whole or in part with other embodiments.

[0130] The test current Id that flows through transistor 117 is supplied by operating the constant current circuit 121. The voltage Vd that is applied to transistor 117 is supplied from the voltage generation circuit 509.

[0131] The constant current circuit 121 and the voltage generation circuit 509 are housed within the power supply unit 132. The power supply unit 132 is controlled to operate / not operate (on / off) by signals from the controller circuit board (controller) 111. In addition, the output and non-output of the test voltage Vd and test current Id can be switched. The device control circuit board 209 is timing-controlled by the controller circuit board (controller) 111.

[0132] It goes without saying that the semiconductor device testing apparatus and semiconductor device testing method of the present invention can also be applied to semiconductor devices 117 having multiple transistors in one package, as shown in Figures 40(b) and 40(d), and to semiconductor modules 117 having multiple transistor elements connected together, as shown in Figures 40(c) and 40(e).

[0133] We will explain assuming that the emitter terminal e of transistor 117 is grounded. The gate driver circuit 113 is connected to the gate (base) terminal g of transistor 117. A variable resistor circuit 125 is connected between the output of the gate driver circuit 113 and the gate terminal of the transistor 117.

[0134] More specifically, as shown in Figure 7, the sample connection circuit 203 is connected via the connector 202. The sample connection circuit 203 includes or is formed a gate driver circuit 113, a variable resistor circuit 125, a constant current circuit 118, and an operational amplifier circuit (buffer circuit) 116.

[0135] The sample connection circuit 203 is isolated from the device control circuit board 209 and electrically connected by a connector 208, so that it can be positioned close to the transistor 117 to be tested.

[0136] The sample connection circuit 203 is connected to transistor 117 via connection pin 206 of connector 202. The distance between the gate driver circuit 113 and the gate terminal g of transistor 117 is short, less than 30 mm. If the distance between the gate driver circuit 113 and the gate (base) terminal g of transistor 117 is long, noise will be superimposed on the gate (base) terminal g, causing transistor 117 to malfunction.

[0137] As shown in Figure 7, a test signal Vsg is applied from the gate driver circuit 113 to the gate (base) terminal g of transistor 117. The gate driver circuit 113 includes an operational amplifier circuit.

[0138] As shown in Figures 8 and 9, the device control circuit board 209 is located in chamber B of the housing 210 of the semiconductor device testing apparatus. The housing 210 incorporates the power supply unit 132, the drive circuit system, the heating and cooling plate 134, and the like.

[0139] The sample connection circuit 203 is placed in the C1 chamber of the semiconductor device test apparatus housing 210 in order to position it close to the transistor 117 to be tested. The sample connection circuit 203 is connected to a connector 208 located on the side of the housing 210. The wiring connected to the connection pin 206 of the connector 208 is connected to the device control circuit board 209 in chamber B.

[0140] The sample connection circuit 203 is connected to the device control circuit board 209 by the connection pins 206 of the connector 208. Each sample connection circuit 203 is individually positioned to correspond to each transistor 117 to be tested, and the sample connection circuits 203 are configured to be easily detachable by connectors 202, etc.

[0141] The constant current circuit 118 supplies a constant current Ic to the diode Di, which is positioned or formed between the channels of transistor 117. The operational amplifier circuit 116 buffers the terminal voltage of diode Di (lowers its output impedance) and outputs it as the Vi voltage. The Vi voltage is converted from analog to digital by the temperature measurement circuit 115.

[0142] The constant current Ic output by the constant current circuit 118 can be set to flow from the collector terminal to the emitter terminal of transistor 117 in the case of Figure 1, and can also be set to flow from the emitter terminal to the collector terminal of transistor 117 in the case of Figure 2.

[0143] In the case of Figure 1, a constant current Ic is applied between the channels of transistor 117, and the channel terminal voltage Vi of transistor 117 is applied to the temperature measurement circuit 115. The temperature measurement circuit 115 obtains the temperature information Tj of transistor 117 from the terminal voltage Vi and transmits it to the controller circuit board 111. The temperature information is output from the connector 213 of the device control circuit board 209 to the mother board 207 and sent to the controller circuit board 111.

[0144] In the case of Figure 2, the terminal voltage Vi of diode Di is applied to the temperature measurement circuit 115. The temperature measurement circuit 115 obtains the temperature information Tj of transistor 117 from the terminal voltage Vi and transfers it to the controller circuit board 111. The temperature information is output from the connector 213 of the device control circuit board 209 to the mother board 207 and sent to the controller circuit board 111. The gate driver circuit 113 applies a set frequency (on / off period) and a set gate control signal Vsg to the gate terminal of transistor 117.

[0145] The Vsg control signal output from the gate driver circuit 113 causes transistor 117 to operate / deactivate (on / off), and a current Id flows between the channels of transistor 117 during the period when transistor 117 is ON.

[0146] The gate driver circuit 113 includes a variable resistor circuit 125. The resistance value Vr of the variable resistor circuit 125 is configured to be set to a constant voltage or a voltage that changes over time, between 0 (Ω) and 500 (Ω).

[0147] A resistor R (not shown) may be placed between the gate (base) terminal g of transistor 117 and the emitter terminal e or collector terminal c. By adjusting the value of resistor R, the slope angle of the rising and falling voltage waveforms of the gate control signal can be adjusted.

[0148] The gate driver circuit 113 can set the slope of the rising edge waveform (rising edge time Tr) and the falling edge waveform (falling edge time Td) of the gate electrical signal applied to the gate (base) terminal g of transistor 117. By adjusting the rising edge time Tr and the falling edge time Td separately, the on-time and on-characteristics of transistor 117 can be controlled to predetermined values.

[0149] As described above, the semiconductor device testing apparatus and semiconductor device testing method of the present invention can control, adjust, or set the resistance value Vr of the variable resistor circuit connected to the gate terminal of the transistor 117, or the rise time / fall time of the gate driver circuit 113.

[0150] In Figures 1 and 2, the resistance value Vr of the variable resistor circuit 125 of the gate driver circuit 113 is shown as variable, but this is not the only option. For example, the variable resistor circuit 125 could be an external resistor, and this resistor could be connected to the gate terminal of the transistor 117 via a connector (not shown), etc.

[0151] In Figure 1, the constant current circuit 118 applies a predetermined constant current Ic between the channels of transistor 117. In Figure 2, the constant current Ic is applied to diode Di. When the temperature of transistor 117 changes, the channel terminal voltage of transistor 117 and the terminal voltage of diode Di change.

[0152] By monitoring the channel terminal voltage Vi of transistor 117 and the terminal voltages of diode Di, etc., the temperature change of transistor 117 can be measured or observed. Diode Di is formed using the same semiconductor process as the transistor.

[0153] Diode Di may be a diode from another semiconductor chip mounted on the semiconductor chip on which transistor 117 is formed. Diode Di may also utilize a parasitic diode that is formed incidentally during the formation of transistor 117.

[0154] By turning on (closing) the switch circuit 507, a constant current Ic is applied to or supplied between the channels of transistor 117 or to diode Di. At this time, the test current Id from the constant current circuit 121 is interrupted.

[0155] When a constant current Ic is passed between the channels of transistor 117, a voltage V2 is applied to the gate terminal of transistor 117 to turn it on. Therefore, the on-voltage Vsg (V1 voltage) when current Id is passed through transistor 117 and the on-voltage Vsg (V2 voltage) when a constant current Ic is passed through are made to be different. The V2 voltage is set to the voltage determined by measuring the temperature coefficient K.

[0156] The V1 voltage is generated by the DA converter circuit (digital-to-analog converter circuit) 508a, and the V2 voltage is generated by the DA converter circuit (digital-to-analog converter circuit) 508b. The selection between the V1 and V2 voltages is performed by the switching circuit (selection circuit) 605. Because the switching circuit 605 selects between the V1 and V2 voltages, the speed at which the gate control signal Vsg changes from the V1 voltage to the V2 voltage is very fast.

[0157] To prevent transistor 117 from overheating due to the constant current Ic, the constant current Ic is set to a value that is sufficiently smaller than the constant current Id flowing through the channel of transistor 117.

[0158] It is preferable that the resistance value Vr of the variable resistor circuit 125 when voltage V1 is applied is different from the resistance value Vr of the variable resistor circuit 125 when voltage V2 is applied. The resistance value Vr of the variable resistor circuit 125 when voltage V2 is applied is set lower than the resistance value Vr of the variable resistor circuit 125 when voltage V1 is applied.

[0159] Specifically, the constant current Ic is set to 1 / 1000 or less of the current Id that flows through transistor 117 during testing. Preferably, the current Ic that flows through transistor 117 is 1 × 10⁻⁶ of the current Id. 6 1 or more 1 x 10 4 Set it to 1 or less. The constant current Ic should be between 0.1mA and 100mA.

[0160] The constant current Ic is changed or set, and the channel voltage of transistor 117 and the diode Di voltage (collector-emitter terminal voltage of transistor 117) are measured to determine the temperature information Tj (temperature coefficient K, etc.). The determined temperature information Tj or terminal voltage Vi is stored in the temperature measurement circuit 115 or controller 111.

[0161] The temperature information Tj is obtained by heating the transistor 117 to a predetermined temperature using the heating and cooling plate 134, and measuring the terminal voltage by passing a constant current Ic through a diode Di or the like. By changing the predetermined temperature and measuring the terminal voltage of the diode Di or the like, the terminal voltage of the diode Di or the like as a function of the temperature of the transistor 117 can be obtained. Therefore, the temperature information Tj (temperature coefficient K, etc.) of the transistor 117 can be determined from the terminal voltage of the diode Di or the like as a function of the temperature. Alternatively, the temperature information Tj (temperature coefficient K, etc.) of the transistor 117 can be determined from the terminal voltage of the transistor 117 or the like as a function of the temperature.

[0162] The constant current Ic is applied to the diode Di, etc., when the channel current Id is not flowing. In other words, when the test current Id is not applied to transistor 117, the constant current Ic is applied to measure or acquire the terminal voltage of the diode Di, etc. The operational amplifier circuit (buffer circuit) 116 outputs the terminal voltage Vi (terminal c - terminal e) of the diode Di.

[0163] Note that the operational amplifier circuit 116 is not limited to being composed of operational amplifier elements. Any circuit with an output impedance lower than its input impedance will suffice. The temperature measurement circuit 115 obtains the temperature information Tj of the transistor 117 being tested from the stored temperature coefficient K and the inter-channel voltage Vi.

[0164] The requested temperature information Tj is sent to the controller circuit board (controller) 111. When the terminal voltage Vi or the temperature information Tj exceeds a predetermined set value, the controller circuit board (controller) 111 determines that the transistor 117 is in a predetermined stress state or degradation state, and takes action such as changing the test control or stopping the test.

[0165] The switch circuit 124b uses a power MOSFET. A MOSFET is preferable because it has a low channel voltage (source-drain voltage Vsd). This is to ensure a stable current Im flows when the switch circuit 124b is turned on and the terminals of the constant current circuit 121 are short-circuited.

[0166] The switch circuit 124b is mounted or formed on the switch circuit board 201b. The switch circuit 124b is connected to the conductor plate 204. The conductor plate 204 is, for example, a copper plate with a thickness of 5 mm and a width of 50 mm. The length of the conductor plate 204 is, for example, 250 mm. Figure 17 shows the connection (contact) state between the fork plug 205 and the conductor plate 204.

[0167] Figure 17(a) is a schematic diagram, viewed from above, showing a switch circuit board (printed circuit board) 201 on which a switch circuit and the like are formed, with a conductor plate 204 attached and a fork plug 205 connected to the conductor plate 204. Figure 17(b) is an explanatory diagram showing a state in which the fork plug 205 is clamped to one end of the conductor plate 204. As shown in Figure 17, two conductive plates 204 are attached to the switch circuit board 201. The conductive plates 204 and the switch circuit board 201 are fastened together with screws.

[0168] The fork plug 205 and the conductor plate 204 are electrically connected by mechanically fitting them together. When the U-shaped portion of the fork plug 205 is inserted into the conductor plate 204, the U-shaped portion expands slightly or makes proper contact, resulting in a good connection between the fork plug 205 and the conductor plate 204. As shown in Figure 17, a connecting bolt 219 is attached to the fork plug 205. The connecting wire 211 is connected to the connecting bolt 219, etc.

[0169] Figure 17(b) shows a cross-section at AA' in Figure 17(a). The conductor plate 204 and the fork plug 205 are in contact at contact portions 220a and 220b formed on the fork plug 205. The contact portion 220 is made of phosphor bronze or nickel alloy and has spring properties. The surface of the contact portion 220 is gold-plated or silver-plated. The plating improves the electrical stability of the connection portion 220.

[0170] As shown in Figure 9, the fork plug 205 and the conductor plate 204 are electrically connected by inserting the fork plug 205 through the opening 216 of the partition wall 214. The materials, structure, and operation of the fork plug 205, as described in Figure 17, etc., apply to the short-circuit plug 501.

[0171] Figure 9 shows the arrangement of each component of the semiconductor device testing apparatus of the present invention. The housing 210 of the semiconductor device testing apparatus has multiple parts. The lower part of the housing is separated into chamber A and chamber B. The power supply unit 132 is located in chamber A. Chamber A and chamber B are separated by a partition wall 215. Chamber C1 and chamber C2 are separated by a partition wall 217.

[0172] The coil 502 and the variable capacitance capacitor 505 are located in chamber B, which is provided with particularly sufficient electrostatic and electromagnetic shielding. The coil 502 is connected to the shorting plug 501.

[0173] The power supply unit 132, switch circuit board 201, and transistor 117 generate significant noise due to repeated operation / deactivation cycles. This noise can cause the circuit board and other components to malfunction. Malfunctions can be prevented by electrostatic and electromagnetic shielding the partitions between each chamber.

[0174] Electrostatic shielding and electromagnetic shielding are achieved by attaching or forming conductive plates, conductive sheets, conductive films, metal plates, metal films, or wire mesh around each room, on the surface of the partition walls, or inside them.

[0175] Chamber C1 contains a heating / cooling plate 134, a circulating water pipe 135, etc., as shown in Figure 8, and the transistor 117 to be tested is placed in close contact with the heating / cooling plate 134. Silicone resin is applied between the transistor 117 and the heating / cooling plate 134.

[0176] A water leak sensor (not shown) is positioned around the heating and cooling plate in chamber C1. If circulating water (cooling medium) or other fluids leak, the water leak sensor is activated, causing the semiconductor device testing apparatus to stop or an alarm to sound. Furthermore, the semiconductor device testing apparatus is also configured to stop or an alarm to sound based on the output or information from a temperature sensor 521 that measures or monitors the temperature of the heating and cooling plate 134. An alarm or notification lamp illuminates based on the output or information from the temperature sensor 521.

[0177] A drainage groove (not shown) is formed around the heating / cooling plate 134. When circulating water (cooling medium) leaks from the heating / cooling plate, it flows into the drainage groove and is discharged outside the semiconductor device testing apparatus. The heating and cooling plate 134 is mounted on a tray (not shown), and the tray is configured to be detachable from the partition wall 214. As described above, the partition wall 214 is configured to prevent circulating water (cooling medium) from leaking into the lower chambers A and B even if the circulating water pipe 135 or the like is damaged.

[0178] A partition wall 215 is formed between Room A, where the power supply unit 132 is located, and Room B, where the drive circuit system is located. An electrostatic shielding plate or an electromagnetic shielding plate is placed on the partition wall 215 to shield the noise from the power supply unit 132, so that the noise is not applied to the drive circuit system in Room B.

[0179] In this embodiment of the present invention, a short-circuit plug 501 and a fork plug 205 are inserted from chamber C2 and connected to the conductor plate 204 in chamber B. An opening 216 is formed in the partition wall 214 for inserting the short-circuit plug 501 and the fork plug 205.

[0180] As shown in Figure 17(c), a connector 213 is attached to the motherboard 207. A controller circuit board 111, a device control circuit board 209, and a switch circuit board 201 are attached to the connector 213 on the motherboard 207. The number of switch circuit boards 201 is prepared according to the number of transistors 117 to be tested. The number of switch circuit boards 201 can be easily changed by changing the number of switch circuit boards 201 attached to the motherboard 207.

[0181] The motherboard 207 receives temperature information Tj, inter-channel voltage Vi, control signals for the variable resistor circuit 125, and control signals for the constant current circuit 118. Power and ground wiring for each circuit are also formed and supplied to each circuit board via connector 213.

[0182] As shown in Figure 17(c), the conductor plate 204 is positioned so as to protrude from the switch circuit board 201. The fork plug 205 is connected to this protruding portion.

[0183] For example, the fork plug 205a is connected to the conductor plate 204a of the switch circuit board 201a. The power wiring 212 is connected to the switch circuit board 201a through the opening 216 of the partition wall 215.

[0184] As shown in Figures 1 and 2, a switch circuit 124b is positioned between the conductor plates 204a and 204b of the switch circuit board 201b. When the switch circuit 124b is turned on, a short circuit occurs between the conductor plates 204a and 204b.

[0185] When the conductor plates 204a and 204b are short-circuited, the current Id output by the constant current circuit 121 flows to ground as a discharge current Im. Therefore, no voltage is applied between the channels of transistor 117, no current flows through transistor 117, and no overvoltage or overcurrent is applied to transistor 117 or other electrical elements.

[0186] A fork plug 205c is connected to conductor plate 204b. A fork plug 205a is connected to conductor plate 204a. A fork plug 205e is connected to conductor plate 204d. A fork plug 205b is connected to conductor plate 204b.

[0187] The short-circuit plug 501 and fork plug 205 are made of metals such as copper and aluminum. The short-circuit plug 501 and fork plug 205 have a nickel-plated base coat, and the surface is plated with gold, silver, or other finishes.

[0188] The short-circuit plug 501 and fork plug 205 have screw threads, and are configured so that the connecting wires 211 and power wires 212 can be attached to the short-circuit plug 501 and fork plug 205 using connecting bolts 219.

[0189] As shown in Figure 9, the fork plug 205c is inserted through the opening 216 of the partition wall 214 located between chamber C2 and chamber B, and is connected to the conductor plate 204b. The fork plug 205e is inserted through the opening 216 of the partition wall 214 located between chamber C2 and chamber B, and is connected to the conductor plate 204d.

[0190] Because the current flowing through the transistor 117 being tested is large, several hundred amperes, the connecting wires 211 used are also thick. As a result, the thick connecting wires 211 and power supply wires 212 are stiff. Therefore, it is not easy to change the connections of the connecting wires 211 and power supply wires 212.

[0191] In the semiconductor device testing apparatus of the present invention, a fork plug 205 is inserted from the C2 chamber into any opening 216 of the partition wall 214. By changing the position of the opening 216 into which the fork plug 205 is inserted, it is possible to connect to any switch circuit board 201.

[0192] Therefore, to change the connection to the switch circuit board 201 used for testing transistor 117, it is not necessary to rewire the connection wiring 211, but only to change the position of the opening 216 into which the fork plug 205 is inserted. Furthermore, as shown in Figure 17(c), the switch circuit board 201 only requires a change in the position of the connector 213 that connects to the motherboard 207.

[0193] As described above, the switch circuit board 201 and device control circuit board 209 connected to the motherboard 207 are arranged according to the test content of the electrical elements 117 such as semiconductor elements and the number of electrical elements 117 to be tested. Switching between the switch circuit board 201, etc., is performed by changing the position of the fork plug 205 inserted into the opening 216 of the partition wall 214.

[0194] As shown in Figures 1, 2, and 7, the connecting wire 211b connected to transistor 117 is connected to fork plug 205c. The connecting wire 211a connected to transistor 117 is connected to fork plug 205e. By attaching and detaching the fork plugs 205c and 205e from the conductor plate 204, the semiconductor element 117 to be tested can be attached to and detached from the test circuit.

[0195] It is preferable to mount multiple transistors or the like as switch circuits 124 on the switch circuit board 201. The more switch circuits 124 there are, the smaller the impedance that short-circuits the two conductor plates 204 can be.

[0196] The on / off switching of the switch circuit 124 on the switch circuit board 201 generates significant noise. To address this, although not shown in Figure 17(c), a metal plate is placed between the two switch circuit boards 201 to act as a shield, and the metal plate is grounded. The heat generated by the switch circuit 124 is dissipated to the conductor plate 204. The conductor plate 204 is in close contact with the copper foil of the switch circuit board 201. Heat is also transferred to the copper foil.

[0197] A heat sink (not shown) is attached to the switch circuit 124. The ground terminal of the switch circuit 124 is connected to the ground of the switch circuit board 201. Heat from the conductor plate 204 is also dissipated through the ground copper foil of the switch circuit board 201.

[0198] When switch circuit 124b is turned on (closed), the output terminals of constant current circuit 121 are short-circuited, and a short-circuit current Im flows to ground. Therefore, the output current of constant current circuit 121 is not supplied to transistor 117. When switch circuit 124b is open, the output current Id of constant current circuit 121 is supplied to transistor 117.

[0199] In the embodiment shown in Figure 7, three transistors 117 (transistors 117a, 117b, and 117c) are tested simultaneously or alternately. The selection of transistors 117 (transistors 117a, 117b, and 117c) is made by applying gate control signals Vsg (gate control signals Vsga, Vsgb, and Vsgc) to the gate terminals of transistors 117. A sample connection circuit 203 is connected to each transistor 117 via a connector 202.

[0200] In the embodiment shown in Figure 7, the conductor plate 204d is connected to the coil 502. Fork plugs 205ea, 205eb, and 205ec are connected to or detached from the conductor plate 204d, respectively, and are connected to the collector terminals of transistors 117a, 117b, and 117c, respectively.

[0201] Conductor board 204b is connected to ground (AGND). Fork plugs 205ca, 205cb, and 205cc, which are connected to the emitter terminal of transistor 117a, are connected to or detached from conductor board 204b.

[0202] Each fork plug 205 is inserted through an opening 216 in the bulkhead 214 and electrically connected to the conductor plate 204. A temperature sensor 521 is placed on the conductor plate 204 to monitor the temperature change of the conductor plate 204.

[0203] Fork plugs 205ea, 205eb, and 205ec are electrically connected by conductor plate 204d, while fork plugs 205ca, 205cb, and 205cc are electrically connected by conductor plate 204b.

[0204] Which of transistors 117a, 117b, or 117c is tested is controlled by a gate control signal applied to the gate terminal of each transistor 117. Alternatively, the test is switched by inserting or not inserting the fork plug 205 into the opening 216. It goes without saying that the matters described in Figure 7, etc., can be applied to other embodiments of the present invention and can be combined with other embodiments.

[0205] Figure 13 shows a single transistor 117 (Figure 40(a1)(a2)) for ease of illustration. The connecting structure 218a is inserted into the opening 216a of the partition wall 217, and the connecting structure 218b is inserted into the opening 216b of the partition wall 217.

[0206] Generally, as shown in Figure 8(b), an opening 216 is formed in the partition wall 217. A connecting structure 218a1 is inserted into opening 216a1, and a connecting structure 218b1 is inserted into opening 216b1. A connecting structure 218a2 is inserted into opening 216a2, and a connecting structure 218b2 is inserted into opening 216b2. A connecting structure 218an is inserted into opening 216an, and a connecting structure 218bn is inserted into opening 216bn.

[0207] The connecting structure 218a is connected to the element terminal 226a of the transistor 117, and the connecting structure 218b is connected to the element terminal 226b of the transistor 117. A circulating water pipe 135 is incorporated into the heating and cooling plate 134.

[0208] A connector 202 is connected to the terminals of transistor 117, and a signal wire 222 connected to the connector 202 is connected to the sample connection circuit 203. The signal wire 235 of the sample connection circuit 203 is connected to the device control circuit board 209 via a connector 208.

[0209] The partitions (partitions 214, 215, and 217) serve to separate each room (room C1, room C2, room A, and room B) and to prevent outside air from flowing in. In particular, since condensation may occur in room C1 during low-temperature testing, dry air is introduced into room C1. The dry air that flows into room C1 is discharged through opening 216 to the other rooms or to the outside of the enclosure 210.

[0210] A fixing screw 221 is attached to the other end of the connecting structure 218, and the connecting wiring 211 is connected to the connecting structure 218. A fork plug 205, which serves as a connecting member, is attached to the other end of the connecting wiring 211. The fixing screw 221 is not limited to a screw; any type of screw that can electrically connect the connecting wiring 211 to the connecting structure 218 is acceptable.

[0211] The sample connection circuit 203 is connected to the device control circuit board 209 by the connection pins 206 of the connector 208. Each sample connection circuit 203 is individually positioned to correspond to each transistor 117 to be tested, and the sample connection circuits 203 are configured to be easily removable.

[0212] Figure 11 is an explanatory diagram of a connection structure 218, which is an embodiment of the semiconductor device testing apparatus of the present invention. Figure 11(a) is a schematic diagram showing the back surface, and Figure 11(b) is a schematic diagram showing the side surface. A groove 518 is formed or arranged in the heat pipe fitting 231. A fixing plate 511 is inserted into the groove 518 to fix the connection structure 218 so that its position does not change.

[0213] The heat pipe 223 is tightly fitted into the recess 234 on the surface of the connecting structure 218. Thermal conductive grease or heat dissipation silicone oil compound may be applied between the surface of the connecting structure 218 and the heat pipe.

[0214] The heat pipe 223 is positioned to fit into the recess 234. By positioning the heat pipe 223 in the recess on the back side, the risk of damage to the heat pipe 223 is reduced. The heat pipe fitting 231 of the connecting structure 218 is made of a material with a lower coefficient of thermal expansion than the heat pipe 223.

[0215] The connecting structure 218 is heated during testing. Consequently, the heat pipe 223 and the heat pipe fitting 231 are also heated. Due to the heating, the heat pipe 223 and the heat pipe fitting 231 expand.

[0216] In this invention, the heat pipe fitting 231 of the connecting structure 218 is made of a material with a lower coefficient of thermal expansion than the heat pipe 223. Alternatively, the heat pipe 223 of the connecting structure 218 is made of a material with a higher coefficient of thermal expansion than the heat pipe fitting 231. The heat pipe 223 material expands more within the recess 234, causing the heat pipe 223 to be more firmly fitted into the recess 234. Therefore, the heat pipe 223 will not come loose.

[0217] Examples of materials for the heat pipe fitting 231 include copper (linear expansion coefficient 16.8), brass (linear expansion coefficient 19), iron (linear expansion coefficient 12.1), and stainless steel (SUS304) (linear expansion coefficient 17.3). Examples of materials for the heat pipe 223 include materials with a higher linear expansion coefficient than the heat pipe fitting 231, such as aluminum (linear expansion coefficient 23), tin (linear expansion coefficient 26.9), and lead (linear expansion coefficient 29.1). Among these, it is preferable to use copper (linear expansion coefficient 16.8) for the heat pipe fitting 231 and aluminum (linear expansion coefficient 23) for the heat pipe 223. The heat pipe fitting 231 can also be made of materials other than metal, such as carbon. The heat pipe 223 consists of a small amount of liquid (working fluid) vacuum-sealed inside a sealed container, with a capillary structure (wick) on its inner wall. In addition to pure water, methanol (methyl alcohol), acetone, sodium, mercury, fluorocarbon refrigerants, and ammonia may be used as the working fluid. Wick materials include aluminum, copper, stainless steel, sintered alloys, wire mesh, foamed metal, and ceramics.

[0218] The connection structure 218 mainly consists of a heat pipe fitting 231, a connection pressure section 232, and a connection holding section 233. The element terminal 226 of the semiconductor element is inserted between the connection pressure section 232 and the connection holding section 233.

[0219] Figure 13 is an explanatory diagram illustrating the connection state between the transistor 117 and the connecting structure 218. The transistor 117 is fixed in close contact with the heating / cooling plate 134a. Fixation is performed by the pressure of a spring (not shown). If necessary, a heating / cooling plate is also placed above the transistor 117 to allow the transistor 117 to be set to a predetermined temperature condition.

[0220] Connector 202 is connected to the terminals of transistor 117 (emitter (drain / source) terminal e, gate (base) terminal g, and collector (source / drain) terminal c). Signal wiring 222 is drawn out from connector 202. The control signal Vsg applied to the gate (base) terminal g of transistor 117 and the constant current Ic from the constant current circuit 118 are applied to signal wiring 222.

[0221] Since the transistor 117 to be tested needs to be fixed in close contact with the heating / cooling plate 134, it is difficult to remove it easily. The installation process for the transistor 117 involves first fixing multiple transistors 117 to be tested to the heating / cooling plate 134. Next, the transistor 117 to be tested is selected, and the connecting structure 218 is inserted through the opening 216 of the partition wall 217 and attached to the element terminal 226 of the semiconductor element 117.

[0222] The selected transistor 117 is electrically connected to the element terminal 226 by inserting the connecting structure 218 from the C2 chamber side into the opening 216 where the selected transistor 117 is located.

[0223] Electrical connection to transistor 117 is easy, as it only requires selecting the position for inserting the connection structure 218. Furthermore, the test conditions and test content for transistor 117 can be easily changed by modifying the applied signal to the connection wiring 211 connected to the connection structure 218.

[0224] The element terminal 226 is clamped (connected) by contact portions 225a and 225b under pressure. A connecting wire 211 is connected to one end of the connecting structure 218, and a constant current Id is applied to the transistor 117 from the connecting wire 211. A heat pipe 223 is located on the back side of the connecting structure 218.

[0225] A current of several hundred amperes (A) flows through the element terminal 226. Even with a small resistance at the contact point 225, the current of several hundred amperes (A) generates a large amount of heat, overheating the element terminal 226. When the element terminal 226 overheats, the transistor 117 also overheats, causing it to degrade or break down.

[0226] In this invention, the heat generated at the element terminal 226 is transferred to the connection wiring 211 side of the connection structure 218 by the heat pipe 223. Therefore, the contact portion 225 is not overheated. A cooling fan 227 is positioned below the connection structure 218 to dissipate the heat from the heat pipe 223.

[0227] As shown in Figure 12(a), heat dissipation fins 228 may be formed or arranged so as to be in close contact with the heat pipe 223. As shown in Figure 12(b), a circulating water pipe 135 may be formed or arranged within the connecting structure 218 to cool the connecting structure 218.

[0228] In Figure 13, the transistor 117 (semiconductor element 117) had two element terminals 226, element terminal 226a (P) and element terminal 226b (N). As shown in Figure 14, the technical concept of the present invention can also be applied even if the element terminal 226 of the transistor 117 has three terminals, element terminal 226a (P), element terminal 226b (N), and element terminal 226c.

[0229] Figure 14 is an explanatory diagram illustrating the connection state between a semiconductor module 117 having three element terminals 226 (element terminal 226a (P), element terminal 226b (N), and element terminal 226c (O)) as shown in Figures 40(b), (c), (d), and (e), and a connecting structure 218.

[0230] In Figure 14, a heat pipe 223a is formed or arranged on the connection structure 218a, and a heat pipe 223b is formed or arranged on the connection structure 218b, whereas a heat pipe 223 is not formed or arranged on the connection structure 218c. The connection structure 218c is connected to the element terminal 226c. No large current flows through the element terminal 226c(O) of the transistor 117. There is no need to form a heat pipe 223 on the connection structure 218c.

[0231] By making the connection structure 218c thinner than the other connection structures 218 (connection structures 218a and 218b), the connection between the connection structure 218 and the element terminal 226 of the transistor 117 becomes easier. In addition, since the space for arranging the transistor 117 does not need to be narrow, the number of transistors 117 that can be mounted on the heating and cooling plate 134 can be increased.

[0232] As shown in Figure 15(a), the connection structure 218 in the embodiment of the present invention mainly consists of a heat pipe fitting 231, a connection receiving portion 225, a connection pressure portion 232, and a connection holding portion 233. The element terminal 226 of the semiconductor element is inserted between the connection receiving portion 225 and the connection holding portion 233.

[0233] A spring 236 is inserted into or positioned in the spring hole 239 of the connection receiving portion 225 and the connection pressure portion 232. A positioning screw 237 is inserted into or positioned in the positioning screw hole 240 in the center of the connection receiving portion 225, thereby positioning the connection receiving portion 225 and the connection pressure portion 232.

[0234] The spring 236 is a pressing means, a sliding means, or a positioning means. A coil spring is one example of the spring 236. Other examples include leaf springs, spiral springs, tone bars, and disc springs. The spring 236 is preferably formed or constructed from a metal material with good conductivity, but it may also be made from heat-resistant rubber, plastic, or ceramic material.

[0235] A coil spring 236 is positioned between the connection receiving portion 225 and the connection pressure portion 232. The connection pressure portion 232 is connected by one or more fixing screws 224b. By tightening or attaching the fixing screws 224b, pressure (compression) is applied between the connection receiving portion 225 and the connection holding portion 233.

[0236] In Figure 7, etc., a connecting structure is placed between the fork connector 205 and the collector terminal c of the transistor 117, and a connecting structure is placed between the fork connector 205 and the emitter terminal e of the transistor 117.

[0237] The element terminal 226 is sandwiched between the connection receiving portion 225 and the connection holding portion 233, and the element terminal 226 is held between the connection receiving portion 225 and the connection holding portion 233 with a predetermined pressure (predetermined pressing) due to the pressure of the spring 236.

[0238] The pressure (compression) can be easily adjusted by changing the spring 236. Alternatively, the pressure (compression) can be adjusted or set by the degree to which the fixing screw 224b is tightened. The heat pipe fitting 231 and the connection holding part 233 are fixed by one or more fixing screws 224a.

[0239] A connecting receiving portion 225 is positioned between the connecting pressure portion 232 and the connecting holding portion 233. Platinum, gold, silver, tungsten, copper, nickel, or alloys of these materials are used as the constituent material or at least the surface material of the connecting receiving portion 225.

[0240] Similarly, the surface of the connection holding portion 233 that contacts the element terminal 226 may be made of platinum, gold, silver, tungsten, copper, nickel, or an alloy of these materials.

[0241] The connection retaining part 233 is fixed to the heat pipe fitting 231 with fixing screws 224a. The connection pressure part 232 is fixed to the connection retaining part 233 with fixing screws 224b. The element terminals 226 of the semiconductor element are fixed by tightening or positioning the fixing screws 224b. The connection wiring 211 is fixed to the left end of the heat pipe fitting 231 with fixing screws 221. Figures 15(a) and 15(d) are explanatory diagrams illustrating the combined state of the connection holding part 233, the connection receiving part 225, and the connection pressure part 232.

[0242] The connection and holding portion 233 is fixed to the heat pipe 223 and the heat pipe fitting 231 by screws 224a (not shown) inserted into screw holes 238a1 and 238a2. The heat pipe 223 and the heat pipe fitting 231 are connected and fixed in close contact to ensure good thermal and electrical conductivity. The connecting and holding portion 233 is connected to and fixed to the connecting pressure portion 232 by screws 224b (not shown) inserted into screw holes 238b1 and 238b2.

[0243] The connecting receiving portion 225 has protrusions 251 formed at both ends, and the connecting pressure portion 232 has grooves 252 formed at both ends. The protrusions 251 of the connecting receiving portion 225 are fitted into the grooves 252 of the connecting pressure portion 232. The protrusions 251 of the connecting receiving portion 225 and the grooves 252 of the connecting pressure portion 232 are configured to be in electrical contact.

[0244] To improve contact between the element terminal 226 and the connection receiving portion 225, it is preferable to form triangular or other irregularities on the surface of the connection receiving portion 225, as shown in Figure 15(c). The configuration shown in Figure 15 involves sandwiching the element terminal 226 between the plane of the connection pressure portion 232 and the plane of the connection holding portion 233.

[0245] Figure 16 shows a configuration in which the element terminal 226 is sandwiched between the pressing tool mounting plate 313 and the connection holding part 233. Pressing tools 311a and 311b are attached to the pressing tool mounting plate 313. For example, a metal leaf spring is an example of a pressing tool 311. The pressing tool 311 may also be made of a non-conductive material such as silicone resin. The pressing tool 311 is fitted into the pressing tool mounting plate 313.

[0246] The element terminal 226 is sandwiched between the planes of the pressing tool 311 and the connection holding portion 233. Due to the pressing of the pressing tool 311, the element terminal 226 and the connection holding portion 233 are electrically connected.

[0247] In the embodiment of FIG. 15(a), the spring (pressure fitting) 236 was inserted into the spring hole 239 of the contact portion 225. When the spring (pressure fitting) 236, the contact portion 225, and the connection pressure portion 232 are made of a conductive material, electricity may flow through the element terminal 226 -> contact portion 225 -> spring (pressure fitting) 236 -> connection pressure portion 232. In this case, if the resistance value of the spring (pressure fitting) 236 is large, current will flow through the spring (pressure fitting) 236, causing the spring to generate heat and burn out.

[0248] In the embodiment of the present invention shown in FIG. 16, the spring hole 312 is formed in the insulating plate 312. The pressing tool 311 contacts the element terminal 226, and the spring 236 presses the pressing tool mounting plate 313. The insulating plate 312 is disposed above the pressing tool mounting plate 313 to insulate between the pressing tool mounting plate 313 and the spring 236. The spring hole 239 is formed in the insulating plate 312, and the spring 236 is inserted into the spring hole 239. Since other configurations are the same as those in FIG. 15, the description thereof is omitted. Note that the insulating plate 312 may be an insulating film, an insulating membrane, or an insulating gas such as air.

[0249] FIG. 16(b) is a view of the pressing tool mounting plate 313 portion seen from the side. The pressing tools 311a and 311b are disposed and inserted into the pressing tool mounting plate 313. FIG. 16(c) is a view seen from the A direction of FIG. 16(b).

[0250] Since the insulating plate 312 is made of an insulator, even if the pressing tool mounting plate 313 is a conductor like metal, no current will flow through the spring (pressure fitting) 236. Therefore, the current path of element terminal 226 -> contact portion 225 -> spring (pressure fitting) 236 -> connection pressure portion 232 does not occur.

[0251] The embodiment shown in Figure 16(a) was configured to be insulated by an insulating plate 312. The insulating effect in the present invention is not limited to a configuration using an insulating plate 312, as shown in Figure 16(a). For example, the configuration shown in Figure 16(d) is an example.

[0252] Figure 16(d) shows a configuration in which an insulating part 315 made of resin material or the like is placed around the screw hole 238b of the connection pressure part 232. Since the area around the screw hole 238b is insulated by the insulating part 315, no current flows through the fixing screw 224b. Therefore, no current path is generated from element terminal 226 -> contact part 225 -> spring (pressure fitting) 236 -> connection pressure part 232, and the spring (pressure fitting) 236 does not burn out. As described above, the present invention is configured such that an insulating plate 312 is placed on the side of the spring 236 that applies pressure, so that current does not flow to the side of the pressing tool mounting plate 313 and the contact portion 225.

[0253] When current flows, it flows to the pressing components such as the spring 236 and the fixing screw 224b, causing the spring 236 and fixing screw 224b to burn out. Current is supplied to the element terminal 226 via the connection and holding part 233 side, which has fewer electrically high-resistance parts such as the spring 236.

[0254] Figure 1 shows an equivalent circuit diagram and explanatory diagram of a semiconductor device test apparatus in a first embodiment of the present invention. The semiconductor module to be tested is illustrated in Figure 40(d), but is not limited thereto.

[0255] In Figure 1, when the switch circuit 124b is turned on, the output of the constant current circuit 121 is short-circuited, and the current Id output by the constant current circuit 121 flows to ground as current Im. Alternatively, when the switch circuit 124b is turned on, the charge stored between the terminals of the constant current circuit 121 is discharged. When the switch circuit 122a is turned on, the test current Id output by the constant current circuit 121 of the power supply unit 132 is supplied to the transistor 117.

[0256] When performing a drive test on transistor 117 with a test current Id, switch circuit 122b is opened to disconnect the voltage generation circuit 509 from the test circuit system, and switch circuit 122a is closed to connect the constant current circuit 121 to the test circuit system.

[0257] Furthermore, the switch circuit 506b is opened to disconnect the variable capacitance capacitor 505 from the test circuit system. Also, the switch circuit 506a is closed to short-circuit both ends of the coil 502, thereby disconnecting the coil 502 from the test circuit system.

[0258] When performing an avalanche test on transistor 117, switch circuit 122a is opened to disconnect the constant current circuit 121 from the test circuit system, and switch circuit 122b is closed to connect the voltage generation circuit 509 to the test circuit system.

[0259] Furthermore, the switch circuit 506b is closed and the variable capacitance capacitor 505 is connected to the test circuit system. Also, the switch circuit 506a is opened and the coil 502 is short-circuited, and the coil 502 is connected to the test circuit system.

[0260] Figure 21 is a block diagram of the constant current circuit 118. The current Ic output by the constant current circuit 118 is small and has a high output impedance, so noise is easily superimposed on the constant current Ic.

[0261] The present invention eliminates or reduces the effects of noise by adopting the configuration shown in Figure 21. A constant current Ic is passed through transistor 117, and temperature information of transistor 117 (channel voltage Vi, thermal resistance, transient thermal resistance) is obtained by measuring the channel voltage (collector-emitter voltage, drain-source voltage) of transistor 117. However, the constant current Ic is often a small current, and constant current circuits have high impedance, making them susceptible to noise. Therefore, the constant current circuit 118 needs to have a configuration with good noise immunity.

[0262] The configuration shown in Figure 21 suppresses power-related noise leaking from the AC-DC converter circuit 601 by separating the AC-DC converter circuit 601 from the signal power supply. It blocks noise from the AC-DC converter circuit 601 and the reference voltage generation circuit. The AC-DC converter circuit 601, the reference voltage circuit 603, and the variable resistor circuit 125 are set and controlled by the controller 111.

[0263] The AC-DC converter circuit 601 generates a DC voltage Vb from an AC voltage. The DC voltage Vb is stabilized by capacitor 602a and supplied to the reference voltage circuit 603. The reference voltage circuit 603 generates a reference voltage Vs. A stable reference voltage Vs is applied to the gate terminal of transistor 604a.

[0264] The voltage at terminal c of transistor 604a is applied to the gate terminal of transistor 604b, and the voltage a at the emitter terminal of transistor 604b is supplied to the variable resistor circuit 125.

[0265] The dotted lines in Figure 21, specifically the transistor 604a and capacitor 602b, block noise from the AC-DC converter circuit 601, enabling the variable resistor circuit 125 to operate stably and without noise.

[0266] The resistance value of the variable resistor circuit 125 is set by the controller 111. The voltage Vn at the + terminal of the operational amplifier circuit 116, which sets the constant current Ic, is set by the variable resistor circuit 125. The - terminal voltage of the operational amplifier circuit 116 becomes the same voltage as the + terminal voltage, and a stable constant current Ic is generated by the transistor 604c, resistor 111, and operational amplifier circuit 116.

[0267] The constant current Ic is supplied to the channels of transistor 117 or to diode Di when the switch circuit 507 is turned on (closed).

[0268] By adopting a four-layer substrate, the constant current circuit separates the ground (the third layer) of the digital amplifier from the output part (the fourth layer) of the AC-DC converter circuit 601 (the second layer) and the reference voltage circuit 603, reducing noise.

[0269] In the semiconductor test device of the present invention shown in FIGS. 1 and 2, by turning on (closing) the switch circuit 506a, both terminals of the coil 502 are short-circuited, and the coil 502 is disconnected from the test circuit. Also, by turning off (opening) the switch circuit 506a, the coil 502 is inserted or arranged in the current path.

[0270] In the semiconductor test device of the present invention shown in FIGS. 1 and 2, by turning on (closing) the switch circuit 506b, the variable capacitance capacitor 505 is inserted or arranged in the test circuit. By turning off (opening) the switch circuit 506b, the variable capacitance capacitor 505 is disconnected from the test circuit.

[0271] By turning on (closing) the switch circuit 122b, the voltage generation circuit 509 is inserted or arranged in the test circuit, and the voltage Vd is applied. By turning off (opening) the switch circuit 122b, the voltage generation circuit 509 is disconnected from the test circuit.

[0272] By turning on (closing) the switch circuit 122a, the constant current circuit 121 is inserted or arranged in the test circuit, and the constant current Id is applied. By turning off (opening) the switch circuit 122a, the constant current circuit 121 is disconnected from the test circuit.

[0273] The switch circuit SC of the variable capacitance capacitor 505 is configured to be able to be turned on and off even during the test operation. Also, the switch circuit 506a is configured to be able to be turned on and off even during the test operation. Therefore, even during the test operation, the coil 502 can be inserted or not inserted into the test circuit. Note that the resistance value Vr of the variable resistance circuit 125 is also configured to be variable even during the test operation.

[0274] When performing an avalanche test on the semiconductor element 117, switch circuits 506a and 122a are opened and the coil 502 and variable capacitance capacitor 505 are inserted into the test circuit. Also, switch circuit 122b is turned on to connect the voltage generation circuit 509 to the test circuit, and switch circuit 122a is opened to disconnect the constant current circuit 121.

[0275] To obtain a predetermined inductance, shorting plugs 501a and 501b are connected to predetermined positions on the coil 502, and the switch circuit SC for the variable capacitance capacitor 505 is selected to set the variable capacitance capacitor 505 to a predetermined capacitance.

[0276] When performing a load test on the semiconductor element 117, switch circuit 506a is closed to short-circuit both ends of coil 502. Switch circuit 122b is opened to disconnect the variable capacitance capacitor 505 from the test circuit. Additionally, switch circuit 122b is opened to disconnect the voltage generation circuit 509 from the test circuit, and switch circuit 122a is closed to configure the system so that the constant current circuit 121 can be connected to the test circuit.

[0277] The present invention allows for instantaneous switching between avalanche testing and load testing with a high current Id by controlling the on / off states of switch circuits 122 and 506.

[0278] As shown in Figure 1, in a configuration where no diode is connected or formed between the channels of transistor 117, the constant current Ic from the constant current circuit 118 is configured to flow from the collector terminal to the emitter terminal of transistor 117.

[0279] As shown in Figure 2, in a configuration where a diode Di is connected or formed between the channels of transistor 117, the constant current Ic from the constant current circuit 118 is configured to flow from the anode terminal to the cathode terminal of diode Di.

[0280] The main difference between the configurations in Figure 1 and Figure 2 lies in the direction of the constant current Ic supplied by the constant current circuit 118 to the semiconductor element 117. In Figures 1 and 2, the semiconductor element 117 can be any of those shown in Figure 40. It goes without saying that other electrical elements can also be used.

[0281] Figures 3 and 4 are explanatory diagrams of a semiconductor device test method corresponding to the configuration of transistor 117 in Figure 1, primarily illustrating the implementation of an avalanche test. However, it goes without saying that the method is not limited to this, and a load test may also be performed in the configurations shown in Figures 3 and 4.

[0282] Figures 5 and 6 are explanatory diagrams of a semiconductor device test method corresponding to the configuration of transistor 117 in Figure 2, illustrating the process with an example of performing a load test. However, the method is not limited to this, and it goes without saying that an avalanche test may also be performed. However, the method is not limited to this, and an avalanche test and a load test may be performed alternately.

[0283] The gate signal control circuit 112 includes DA converter circuits 508a and 508b. Based on the settings of the controller 111, the DA converter circuit 508 outputs an off voltage V0, a ​​first on voltage V1, and a second on voltage V2.

[0284] A DA converter circuit 508c (not shown) that generates the V0 voltage may be provided, and the switching circuit 605 may be configured to select an off voltage V0, a ​​first on voltage V1, and a second on voltage V2 based on the settings of the controller 111.

[0285] The switching circuit 605 selects either the voltage output by the DA converter circuit 508a or the voltage output by the DA converter circuit 508b and outputs it to the gate driver circuit 113. The output voltage of the gate driver circuit 113 is applied to the variable resistor circuit 125, and the voltage Vsg output by the variable resistor circuit 125 is applied to the gate terminal of the transistor 117.

[0286] The switching circuit 605 can switch between outputting the voltage from the DA converter circuit 508a or the voltage from the DA converter circuit 508b in the order of microseconds, thereby generating a high-speed gate control voltage Vsg. Therefore, it can switch from the on-voltage V1 to the V2 voltage that strongly turns on transistor 117 in the order of microseconds.

[0287] When transistor 117 generates heat, the inter-channel voltage Vi changes. The temperature at which heat is generated changes due to changes in the transistor's characteristics and degradation. Therefore, when testing transistor 117, changes in the transistor's characteristics and degradation can be understood by monitoring the inter-channel voltage Vi of transistor 117 and the terminal voltage of the temperature sensing diode D (Figures 40(d) and 40(e)).

[0288] In a configuration that monitors the terminal voltage of the temperature sensing diode D (Figures 40(d) and 40(e)), a constant current Ic from the constant current circuit 118 is applied to the temperature sensing diode D, and the terminal voltage (anode-cathode voltage) of the temperature sensing diode is measured or detected as voltage Vi.

[0289] The channel-to-channel voltage Vi of transistor 117 is output via an operational amplifier circuit (buffer amplifier circuit) 113 that lowers the output impedance, and the temperature information Tj is obtained from the Vi voltage using a temperature measurement circuit 115. The power supply for the operational amplifier circuit (buffer amplifier circuit) 113 has the off voltage V0 as the low voltage side and the Vh voltage as the high voltage side. The Vh voltage is a voltage value greater than or equal to the V2 voltage.

[0290] The temperature information Tj is input to the controller 111, and the temperature change of transistor 117 is monitored. Based on the temperature information Tj, changes in the characteristics and degradation of transistor 117 are measured or observed. Based on the temperature information Tj, the test of transistor 117 is stopped, interrupted, or the test conditions are changed.

[0291] The larger the inductance of coil 502, the larger the capacitance of variable capacitor 505, and the higher the switching frequency of transistor 117, the greater the transient voltage generated in the avalanche test. The position of the shorting plug 501, the capacitance of variable capacitor 505, and the switching frequency of transistor 117 are set to match the conditions of the avalanche test.

[0292] The resistance value of the variable resistor circuit 125 is set and varied by the controller 111. By increasing the resistance value, the rise or fall curve of the control voltage Vsg applied to the gate terminal of transistor 117 can be made gentler. By decreasing the resistance value, the rise or fall curve of the control voltage Vsg applied to the gate terminal of transistor 117 can be made steeper. As one embodiment of the example, Figures 3, 4, 5, and 6 are explanatory diagrams illustrating the operation of a semiconductor device testing apparatus with the configuration of transistor 117 shown in Figures 1 and 2.

[0293] In Figures 3, 4, 5, and 6, V0 is the off-voltage of the transistor 117 being tested. V1 is the first on-voltage, which is the voltage used to turn on the transistor 117 when testing it. V2 is the second on-voltage, which is used or set to supply a constant current Ic to the transistor 117 and to obtain the temperature information Tj of the transistor 117.

[0294] Specifically, the V1 voltage is between 5V and 15V, and the V2 voltage is greater than 15V and less than or equal to 25V. The V2 voltage is the voltage that strongly turns on transistor 117. By applying the V2 voltage, the inter-channel resistance of transistor 117 is reduced, the effect of heat generation due to the constant current Ic is reduced, and good temperature information Tj can be obtained. Therefore, the on-voltages V1 and V2 applied to the gate terminal of transistor 117 are switched in a short time of 50 microseconds or less.

[0295] Furthermore, the time between stopping the test current Id and applying the V2 voltage to start measuring the Vi voltage should be between 0.1 ms and 5 ms. Preferably, it should be between 0.1 ms and 3 ms.

[0296] Figures 3 and 4 are explanatory diagrams for performing an avalanche test using the semiconductor testing apparatus of the present invention. In Figures 3 and 4, a capacitor 505 and an inductor 502 are connected to the test circuit.

[0297] During the period when the test current Id is applied to the transistor 117 under test, a gate control signal Vsg=V1 voltage is applied to the gate terminal of transistor 117. Applying the V1 voltage causes a constant current or current Id to flow between the channels of transistor 117. To turn off transistor 117, a gate control signal Vsg=V0 voltage is applied to the gate terminal of transistor 117. By alternately applying the V1 and V0 voltages, transistor 117 is switched on and off, and an avalanche test of transistor 117 is performed.

[0298] By setting the application time of voltage V1, the application time of voltage V0, the on / off cycle of transistor 117, the voltage Vd value of voltage generation circuit 509, the inductive reactance value of coil 502, and the capacitive reactance value of variable capacitance capacitor 505, a wide variety of avalanche tests can be performed.

[0299] Furthermore, by switching between the constant current circuit 121 and the voltage generation circuit 509 using the switch circuit 122, it is possible to perform a test that combines load testing and avalanche testing.

[0300] The Vsg voltage, or V0 voltage, can be set to any voltage between negative potential and ground potential. Voltage setting is achieved by the DA converter circuit 508b. Setting V0 voltage to a negative voltage may improve the off-characteristics of transistor 117.

[0301] When measuring or acquiring the temperature information Tj of transistor 117, the application of the Vd voltage is stopped, the switch circuit 124b is closed, and the charge between the channels of transistor 117 is discharged.

[0302] Next, as shown in Figure 4, a voltage Vsg=V2 is applied to the gate terminal of transistor 117, and the switch circuit 507 is closed to allow a constant current Ic to flow between the channels of transistor 117.

[0303] The V2 voltage is the voltage that strongly turns on transistor 117, and the application of the V2 voltage significantly reduces the inter-channel resistance of transistor 117. The application of the V2 voltage reduces the inter-channel resistance of transistor 117 to a level lower than that of transistor 117 with the V1 voltage applied (resulting in a strongly turned-on state). Therefore, the effect of heat generation due to the constant current Ic is reduced to a level lower than that of transistor 117 with the V1 voltage applied. This makes it easier to obtain changes in the characteristics of transistor 117 due to testing, temperature changes due to degradation, etc., or improves the measurement accuracy of temperature information Tj.

[0304] By making the inter-channel resistance of transistor 117 sufficiently small, even when a constant current Ic is passed through transistor 117, the amount of heat generated by transistor 117 at that constant current Ic becomes extremely small. The inter-channel voltage Vi of transistor 117 accurately indicates changes in the characteristics of transistor 117, characteristic degradation, etc.

[0305] In the embodiments of the present invention, a constant current Ic is applied to the transistor 117 to measure or understand changes in the transistor's characteristics, but the present invention is not limited to this. If a temperature measuring diode D shown in Figures 40(d) and 40(e) is configured or formed, a constant current Ic may be applied to the diode D, and temperature information Tj may be obtained by taking the terminal voltage of the diode D as Vi.

[0306] To obtain or measure the temperature of transistor 117 from the channel voltage or the terminal voltage of diode D, it is necessary to obtain the temperature coefficient K beforehand. The temperature information Tj can be determined from the temperature coefficient K and the Vi voltage, etc.

[0307] The temperature coefficient K is determined by setting transistor 117 to a predetermined temperature in a constant temperature bath and applying voltage V2 to the g terminal of transistor 117. A constant current Ic is passed through the inter-channel voltage of transistor 117 and through the diode, and the terminal voltage of diode D is measured. By changing the predetermined temperature and measuring the terminal voltage of diode D, etc., the terminal voltage of the diode, etc. as a function of temperature can be obtained. Therefore, the temperature coefficient K of transistor 117 can be determined from the inter-channel voltage and the terminal voltage of the diode, etc. as a function of temperature.

[0308] The temperature coefficient K may vary between different production lots of transistor 117, but generally it exhibits a constant value across production lots. Therefore, by sampling a transistor 117 from each production lot and determining its temperature coefficient K, this value can be used for other transistors 117.

[0309] To obtain the temperature coefficient K accurately, the temperature coefficient K of each transistor 117 should be measured and tested individually, even within the same lot. The measurement of the temperature coefficient K is not limited to the use of a constant temperature bath. For example, the temperature coefficient K can be obtained by changing the temperature of the water flowing through the heat sink on which the transistor 117 is mounted. In the embodiments described above, the temperature coefficient K was determined in advance, but the semiconductor testing method of the present invention is not limited to this. The transistor 117 is positioned in close contact with the heating / cooling plate 134, and the temperature of the heating / cooling plate 134 is configured to be approximately the same as that of the transistor 117.

[0310] The controller 111 controls the chiller 136 to set the temperature of the heating / cooling plate 134 to a predetermined temperature, applies a constant current Ic to the transistor 117, etc., and measures the inter-channel voltage and the diode D terminal voltage. From the measurement results, the temperature coefficient K is determined. The temperature of the heating / cooling plate 134 is set to multiple temperatures, and the temperature coefficient K is determined at each temperature to improve the accuracy of the temperature coefficient value.

[0311] The temperature coefficient K is determined by heating the transistor 117 to a predetermined temperature using the heating and cooling plate 134, passing a constant current Ic through the diode D, etc., and measuring the terminal voltage. By changing the predetermined temperature and measuring the terminal voltage of the diode D, etc., the inter-channel voltage and the terminal voltage of the diode can be obtained as a function of temperature. Therefore, the temperature coefficient K of the transistor 117 can be determined from the inter-channel voltage and the terminal voltage of the diode as a function of temperature.

[0312] The test conditions are set by varying the current Id, gate voltage Vg, and voltage Vce so that Tj remains constant. When Tj changes, it is determined that transistor 117 has deteriorated or its characteristics have changed, and the reliability of the transistor is determined. For example, the time until the inter-channel voltage Vce increases by 10%, the time until the inter-channel voltage Vce increases by 20%, and the time until transistor 117 fails are used for reliability evaluation.

[0313] External conditions are changed in accordance with the degradation or change in characteristics of transistor 117. For example, if transistor 117 generates heat, the water temperature is lowered. Lowering the water temperature reduces the current flowing through transistor 117, which slows down the degradation and change in characteristics of transistor 117, and as a result, significantly extends the lifespan of transistor 117.

[0314] Furthermore, the temperature of the transistor 117 is maintained at a specified or predetermined value by heating or cooling the circulating water in the chiller 136. In addition, the temperature of the transistor and other components is periodically changed in accordance with the test conditions, being cooled and heated. The Tj of the test transistor is also measured, and the chiller 136 is controlled to maintain the measured Tj at a constant value.

[0315] The temperature measurement circuit 115 obtains the temperature information Tj of the transistor 117 being tested from the temperature coefficient K and voltage Vi it holds. The obtained temperature information Tj is sent to the controller 111. If the temperature information Tj exceeds a predetermined set value, the controller 111 determines that the transistor 117 has entered a predetermined stress state and takes action such as stopping the test. When no current Id is supplied to transistor 117, measure the inter-channel voltage Vi and the terminal voltage of diode D to determine Tj.

[0316] Temperature measurement is performed when no forward current is flowing through transistor 117. Since the temperature of transistor 117 decreases when the forward current (heating current) is turned off, it is desirable to measure the temperature as soon as possible after the power is turned off. Preferably, the temperature measurement should be completed within 1 ms.

[0317] During testing of transistor 117, a constant current Ic is applied to transistor 117 and diode D when the channel current (test current) Id is not flowing. When transistor 117 is not turned on, the constant current Ic is applied to measure the inter-channel voltage Vi, etc.

[0318] The temperature measurement circuit 115 uses the temperature coefficient K and the inter-channel voltage Vi to determine the temperature information Tj of the transistor 117 being tested. The determined temperature information Tj is sent to the controller 111. When the temperature information Tj exceeds a predetermined set value, the controller 111 determines that the transistor 117 has entered a predetermined stress state and stops the test, etc., by decreasing the temperature information Tj.

[0319] In testing, degradation primarily occurs at the junctions within transistor 117. The semiconductor itself does not degrade; rather, the junctions (bonding, die bond, etc.) of transistor 117 degrade, increasing the resistance of the junctions. This increased resistance leads to a higher channel voltage Vce, causing heat generation and raising the temperature of transistor 117.

[0320] When a semiconductor degrades, it is often due to degradation of the gate oxide (insulating film) of transistor 117. When the gate oxide degrades, a short circuit occurs in the oxide (insulating film), and the channel voltage Vce decreases. Alternatively, transistor 117 turns off, no current flows through transistor 117, and the voltage Vce rises to the maximum value of the power supply voltage. When transistor 117 is stressed during testing, the Vce voltage of transistor 117 changes, and usually changes in a direction that increases the temperature information Tj. In the semiconductor testing method of the present invention, the test is terminated under one of the following conditions. • If the temperature information Tj falls outside the specified range. • When the inter-channel voltage Vce falls outside the specified voltage range. • When the thermal resistance falls outside the specified range.

[0321] The temperature measurement circuit 115 uses the temperature coefficient K and the inter-channel voltage Vi to determine the temperature information Tj of the transistor 117 being tested. The determined temperature information Tj is sent to the controller 111. When the temperature information Tj exceeds a predetermined set value, the controller 111 determines that the transistor 117 has entered a predetermined stress state and stops the test, etc., by decreasing the temperature information Tj.

[0322] The temperature information Tj initially fluctuates between the minimum temperature T1 and the maximum temperature T2 at the start of the test. When the test stresses transistor 117, the Vce voltage of transistor 117 changes, and the temperature information Tj usually increases. Based on this temperature change, the amount of change, the rate of change, etc., decisions are made regarding the end of the test.

[0323] By fully turning on transistor 117, the heat generated by the constant current Ic is eliminated, and the inter-channel voltage Vi of transistor 117 can be obtained. The inter-channel voltage Vi is impedance-converted by the operational amplifier circuit (buffer amplifier circuit) 116 and applied to the temperature measurement circuit 115. The temperature measurement circuit 115 determines temperature information Tj based on the Vi voltage and outputs it to the controller 111.

[0324] Temperature information Tj can be obtained from the Vi voltage and the rate of change of the Vi voltage (△Vi). Examples of temperature information Tj include junction temperature, thermal resistance, transient thermal resistance, junction temperature change, thermal resistance change, and transient thermal resistance change.

[0325] In the embodiments of the present invention, the transistor 117, as a semiconductor element, is described as a semiconductor element that turns on when a positive voltage is applied to its gate terminal or base terminal, but it is not limited to this.

[0326] For example, the device may be turned on by applying a negative voltage to the gate terminal or base terminal. In this case, in this specification and drawings, the potential of the on voltage may be replaced with the potential of the off voltage, and the potential of the off voltage may be replaced with the potential of the on voltage.

[0327] Furthermore, the semiconductor element 117 in the semiconductor element testing apparatus of the present invention may be a triac, thyristor, thermistor, positor, diode, LED, etc., rather than a transistor. In this embodiment, the semiconductor element 117 will be described primarily as a transistor.

[0328] Figure 22 is an explanatory diagram of a test method for a semiconductor element 117 that does not have a built-in diode. Transistor 117 has three terminals. These terminals are referred to as terminal c, terminal e, and terminal g. Examples of transistors 117 include SiC transistors, IGBTs, GaN transistors, MOS-FETs, and bipolar transistors.

[0329] A gate driver circuit 113 is connected to the g terminal (gate terminal, base terminal) of transistor 117. The output voltage of the gate driver circuit 113 is variable or set according to the output data of the gate signal control circuit 112.

[0330] For the sake of explanation and understanding, the output voltages of the gate driver circuit 113 are defined as the voltages V0 and Vn that turn off transistor 117, and the voltages V2 and V1 that turn on transistor 117. Each voltage can be set to any voltage. Each voltage can be varied or set in one cycle. The gate signal control circuit 112 allows the voltage to be set to any voltage in a short time.

[0331] In particular, as shown in Figures 31, 32, 33, 34, 35, and 36, the V1 voltage can be varied or set to be higher (direction b) or lower (direction a). Furthermore, it can be changed even within a single cycle (period t2 to t6).

[0332] By increasing the V1 voltage, the on-resistance of transistor 117 decreases. By decreasing the V1 voltage, the on-resistance of transistor 117 increases. By setting the V1 voltage to a predetermined voltage according to the test conditions, the test conditions of transistor 117 can be changed or set to predetermined conditions. By changing the g terminal voltage, the heat generation state of transistor 117 with respect to the test current Id can be arbitrarily changed or set.

[0333] During the period (time) that the test current Id is applied to transistor 117, the switch circuit 124 is turned on (closed). Alternatively, an off voltage is applied to the g terminal of transistor 117.

[0334] The test current Id is supplied from the power supply 132. When applying the test current Id to transistor 117, the voltage V1 is applied to the g terminal of transistor 117 to turn on transistor 117.

[0335] When no test current Id is applied to transistor 117, either the switch circuit 124 is turned off (open), or an off voltage (V0 voltage, Vn voltage) is applied to the g terminal of transistor 117.

[0336] When supplying a constant current Ic to transistor 117, the switch circuit 507 is turned on (closed). Also, the voltage V2 is applied to the g terminal of transistor 117 to turn on transistor 117.

[0337] In testing transistor 117, when supplying the test current Id, a voltage V1 is applied to the g terminal. The V1 voltage is set or adjusted to a predetermined voltage depending on the test conditions. The V2 voltage must be the voltage applied to the g terminal of transistor 117 when determining the temperature coefficient K. Therefore, even if the V1 voltage is changed, the V2 voltage must be fixed to a predetermined value. It is preferable to make the V2 voltage greater than the V1 voltage, so that transistor 117V2 is in the ON state or strongly ON state.

[0338] The test apparatus and test method of the present invention are characterized by the ability to arbitrarily set the voltage applied to the g terminal when supplying a test current Id to the transistor 117 and the voltage applied to the g terminal when supplying a constant current Ic to the transistor 117.

[0339] When a constant current Ic is supplied to transistor 117, a voltage V2 is applied to the g terminal. The V2 voltage is a constant voltage value and does not depend on the V1 voltage. The V2 voltage is used to obtain the temperature information Tj of transistor 117. The temperature information Tj is obtained based on a previously determined or set temperature coefficient K.

[0340] It is preferable that the V2 voltage is greater than or equal to the V1 voltage, because when supplying a constant current Ic, the on-resistance of transistor 117 becomes smaller, and the heat generated by transistor 117 is reduced. As the constant current Ic decreases, it becomes susceptible to noise, so it goes without saying that it is preferable to implement the circuit configuration described in Figure 21 or Figure 9. It is preferable to attach a temperature sensor, such as a thermocouple, to the package of transistor 117 and acquire the temperature data output by the temperature sensor.

[0341] The temperature coefficient K may vary between different production lots of transistor 117, but generally it exhibits a constant value across production lots. Therefore, by sampling a transistor 117 from each production lot and determining its temperature coefficient K, this value can be used for the temperature coefficient K of other transistors 117.

[0342] If the changes from V0 to V2, from V2 to V1, and from V2 to V0 are made too abrupt, transient phenomena may occur. Therefore, the voltage changes output by the gate driver circuit 113 are set to be gradual.

[0343] To obtain the temperature coefficient K accurately, the temperature coefficient K of each transistor 117 should be measured and tested individually, even within the same lot. The measurement of the temperature coefficient K is not limited to the use of a constant temperature bath. For example, the temperature coefficient K can be obtained by changing the temperature of the water flowing through the heat sink on which the transistor 117 is mounted.

[0344] As shown in Figure 31, a voltage V2 is applied to the g terminal during the period (t1~t2, t6~t7) when the constant current circuit 118 or constant current Ic is supplied to the transistor 117, setting the transistor 117 to a strongly ON state or a state with low on-resistance. Therefore, the relationship is V2 > V1. Note that the voltage V2 that causes a strongly ON state is a voltage higher than the V1 voltage.

[0345] In Figure 31, t1-t2 and t6-t7 are the periods during which the inter-channel voltage (voltage between terminal c and terminal e) of transistor 117, known as Vi voltage, is measured (acquired) and temperature information Tj is obtained.

[0346] The measurement (acquisition) of the Vi voltage does not need to be performed during both the t1-t2 and t6-t7 periods; it may be done only during the t6-t7 period. In that case, during the t1-t2 period, the V1 voltage may be applied to the g terminal instead of the V2 voltage.

[0347] Alternatively, as shown in Figure 34, a constant current Ic may be supplied during the t6-t7 period, and the terminal voltage at terminal g may be set to the V2 voltage during the t6-t7 period. During the t1-t2 period, the voltage may be set to either the V0 voltage or the Vn voltage.

[0348] During the period t2 to t6, a voltage V1 is applied to the g terminal of transistor 117 to supply a test current Id to transistor 117. The supply of the test current Id is performed at predetermined intervals. The voltage V1 may be changed or modified every cycle or every multiple cycles.

[0349] In the embodiment shown in Figure 22, a constant current Ic was supplied to transistor 117, and the inter-channel voltage (voltage between terminal c and terminal e) of transistor 117 was measured. Alternatively, the inter-channel voltage of transistor 117 may be measured while supplying a test current Id to transistor 117 without supplying a constant current Ic. Therefore, the constant current circuit 118 is unnecessary. This embodiment is shown in Figure 33.

[0350] In Figure 33, the constant current Ic is not applied (supplied) (it is 0A). The voltage at the g terminal of transistor 117 is varied between the V2 voltage and the V1 voltage. The periods t1-t2 and t6-t7 are the periods during which the inter-channel voltage of transistor 117 is measured (acquired). The test current Id is supplied during the t1-t7 period.

[0351] As the test of applying the test current Id to transistor 117 continues, the inter-channel voltage of transistor 117 changes in accordance with the changes in transistor 117. Therefore, by monitoring the inter-channel voltage, the degradation or changes of transistor 117 can be measured.

[0352] During periods t1-t2 and t6-t7, the terminal voltage at g is set to the V2 voltage, and the voltage at transistor 117 is set to the voltage for which the temperature coefficient K was calculated. Therefore, the temperature information Tj is acquired while the V2 voltage is applied.

[0353] The period from t2 to t6 is the test period during which the test current Id is applied. The periods from t1 to t2 and t6 to t7, during which a constant current Ic is supplied, are much shorter than the period from t2 to t6. By varying the terminal voltage at terminal g between V1 and V2, a good test can be performed, and good temperature information Tj (terminal voltage Vi) can be obtained. As described above, the test apparatus and test method of the present invention are characterized by the ability to set the g terminal voltage to multiple voltages (V1 voltage, V2 voltage).

[0354] Figures 22 and 31 show a method for obtaining the temperature information Tj of transistor 117 by applying a constant current Ic between the channels of transistor 117. Figures 23 and 32 are explanatory diagrams of an embodiment in which the temperature information Tj of transistor 117 is obtained by supplying or applying a constant current Ic to a diode Di built into transistor 117 (transistor 117 and diode formed in the same process), a nearby diode Di, or a parasitic diode Di of transistor 117.

[0355] In the embodiment shown in Figure 23, the direction of supply of the constant current Ic is from the e terminal to the c terminal. The constant current Ic flows through the diode Di. The constant current Ic flowing through the diode Di generates a terminal voltage across the diode Di. The terminal voltage of the diode Di is temperature-dependent. Since the diode Di is built into or located near the transistor 117, the temperature of the diode Di changes due to the heat generated by the transistor 117. Therefore, by supplying a constant current Ic to the diode Di and measuring the terminal voltage of the diode Di, the heat generation state of the transistor 117 can be understood, measured, or obtained.

[0356] During the period when the constant current Ic is flowing, transistor 117 must be kept in the off state. When transistor 117 is in the off state and the switch circuit 507 is on, the constant current Ic is supplied to diode Di.

[0357] Alternatively, the switch circuit 124 is turned off to stop the supply of the test current Id. When transistor 117 is off, the direction of the constant current Ic can be either from terminal c to terminal e or from terminal e to terminal c. When transistor 117 is on, the direction of the constant current Ic is set to be from terminal e to terminal c.

[0358] If the voltage through which the constant current Ic flows is reversed, the polarity of the Vi voltage will also be reversed. In this case, it is best to swap the polarity of the voltage applied to the + and - terminals of the op-amp 116. In transistors such as IGBTs, when an on-voltage is applied to the g terminal, current flows from the c terminal to the e terminal. Therefore, the direction of current flow is unidirectional.

[0359] Transistors using SiC, GaN, etc., are often of the MOS type. In MOS type transistors, the direction of current flow is bidirectional. Therefore, in order to flow a constant current Ic through the diode Di formed on the semiconductor element 117 of SiC, GaN, etc., it is necessary to apply an off voltage to the g terminal of the semiconductor element 117 so that the constant current Ic does not flow through the semiconductor element 117. Figure 24 is an explanatory diagram of a test apparatus and test method for testing MOS-type transistors (FETs) such as SiC and GaN.

[0360] Figure 24 is an explanatory diagram illustrating a method for obtaining temperature information Tj of transistor 117 by supplying or applying a constant current Ic to a diode Di built into transistor 117 (transistor 117 and the diode are formed in the same process), a nearby diode Di, or a parasitic diode Di of transistor 117. In order to supply a constant current Ic to diode Di, it is necessary to turn off transistor 117 by applying an off voltage to the g terminal of transistor 117.

[0361] SiC switches off even at the same potential as IGBTs (V0 voltage), but off-leakage may occur at V0 voltage. Note that V0 voltage is the ground voltage (AGND).

[0362] In the embodiment shown in Figure 32, the voltage Vn is set to a voltage (potential) lower than the V0 voltage during the periods when a constant current Ic is supplied to the diode Di (periods t1-t2 and t6-t7). By setting the voltage to Vn, the off-leak current of transistor 117 is reduced, and transistor 117 enters a completely off state. Therefore, a constant current Ic is supplied to the diode Di effectively. It is preferable that the Vn voltage be 1-3V lower than the ground voltage (AGND). During the period (t2 to t6) when the test current Id is applied (supplied) to transistor 117, switch circuit 124 is turned on and switch circuit 507 is turned off.

[0363] The embodiment shown in Figure 25 is an embodiment of a method for acquiring temperature information Tj by applying (supplying) a constant current Ic to the MOS transistor 117, where the semiconductor element 117 is a MOS-type transistor and there is no diode Di.

[0364] During the period when a constant current Ic is supplied, switch circuit 124 is turned off and switch circuit 507 is turned on. The voltage applied to the g terminal of transistor 117 is the same as in Figure 31.

[0365] By turning off the switch circuit 124, the supply of the test current Id from the power supply 132 is stopped. Switch 507 is turned on during the periods t1-t2 and t6-t7. Alternatively, switch 507 is turned on during the period t6-t7.

[0366] Furthermore, an ON voltage is applied to the g terminal of transistor 117, and a constant current Ic is supplied to transistor 117 from the constant current circuit 118. The direction of the constant current Ic can be either from terminal c to terminal e or from terminal e to terminal c. During the period when the constant current Ic is flowing, the inter-channel voltage Vi is measured or acquired. Temperature information Tj is obtained from Vi.

[0367] As described above, when applying the test current Id to transistor 117 (for a specified time), the switch circuit 124 is turned on (closed). The test current Id is supplied from the power supply 132. When applying the test current Id to transistor 117, the voltage V1 is applied to the g terminal of transistor 117 to turn on transistor 117.

[0368] When no test current is applied to transistor 117, either turn off (open) the switch circuit 124 or apply an off voltage (V0 voltage, Vn voltage) to the g terminal of transistor 117. In particular, for SiC transistors, the off voltage is the Vn voltage applied to the g terminal.

[0369] When supplying a constant current Ic to transistor 117, the switch circuit 507 is turned on (closed). Also, the voltage V2 is applied to the g terminal of transistor 117 to turn on transistor 117.

[0370] In testing transistor 117, when supplying the test current Ic, a voltage V1 is applied to the g terminal. The V1 voltage is set or adjusted to a predetermined voltage depending on the test conditions. The V2 voltage must be the voltage applied to the g terminal of transistor 117 when determining the temperature coefficient K. Therefore, even if the V1 voltage is changed, the V2 voltage must be fixed to a predetermined value.

[0371] The present invention is characterized by the ability to arbitrarily set the voltage applied to the g terminal when supplying a test current Id to the transistor 117, and the voltage applied to the g terminal when supplying a constant current Ic to the transistor 117.

[0372] As shown in Figure 35, the voltage at terminal g can be arbitrarily changed during the period t2 to t6. The voltage changes based on the output of the gate signal control circuit 112, which is the output of the gate driver circuit 113, resulting in a change in the terminal g voltage.

[0373] In the embodiment shown in Figure 35, the voltage at terminal g is changed such that it is V1a at time t2 and V1b at time t6. Since the inter-channel resistance of transistor 117 changes with the voltage at terminal g, the heat generation state of transistor 117 also changes. By changing the heat generation state, a variety of tests can be performed or realized.

[0374] As shown in Figure 36(a), the voltage at the g terminal of the gate that supplies or applies the test current Id to transistor 117 may be periodically changed. In Figure 36(a), the voltage V1a is applied during periods A and C, and the voltage V1b is applied during period B. Periods A (C) and B are repeated alternately.

[0375] As shown in Figure 36(b), the voltage changes shown in Figure 35 may also be implemented. During periods A and C, the voltage changes from V1a to V1b, and during period B, the voltage changes from V1b to V1a. Periods A (and C) and B are repeated alternately. As shown in Figure 36(c), the terminal voltage of terminal g can also be varied during the periods t1-t2 and t6-t7.

[0376] In Figure 36(c), during period A (period C), the V1b voltage is applied to the g terminal of transistor 117 during the period t1-t2. During the period t6-t7, the V2 voltage is applied to the g terminal of transistor 117. During period B, the V1b voltage is applied to the g terminal of transistor 117 during the period t1-t2. The V1b voltage is also maintained during the period t2-t6. During the period t6-t7, the V2 voltage is applied to the g terminal of transistor 117.

[0377] In Figure 36(d), during periods A, B, and C, the Vn voltage is applied to the g terminal of transistor 117 during the period t1-t2. Between t6 and t7, the V2 voltage is applied to the g terminal of transistor 117. During period A (and C), the V1a voltage is applied to the g terminal of transistor 117 during the period t2-t6. During period B, the V1b voltage is applied to the g terminal of transistor 117 during the period t2-t6. In the embodiments shown in Figures 27 and 28, the power supply wiring 212b is grounded (ground potential or reference potential).

[0378] Figures 27, 28, and 39 are explanatory diagrams of the semiconductor testing apparatus and testing method of the present invention. In Figures 27 and 28, multiple transistors 117 (transistors 117Q1 to 117Qn) to be tested are connected in parallel to the power supply unit 132. Figure 39 is an explanatory diagram of a semiconductor device testing method in an embodiment of the present invention that illustrates the operation shown in Figures 27 and 28.

[0379] As shown in Figure 27, when supplying the test current Id1 to transistor 117Q1, switch circuit 124s1 is turned on. At this time, switch circuit Ssa1 is turned off so that the constant current Ic is not supplied to transistor 117Q1. On the other hand, switch circuit 124s2 connected to transistor 117Q2 is turned off so that the test current Id1 is not supplied. The constant current Ic is supplied to transistor 117Q2 by turning on switch circuit Ssa2.

[0380] A test current Id from one power supply 132 is supplied to one transistor 117Q by turning on one switch circuit 124a. A constant current Ic from one constant current circuit 118 is supplied to one transistor 117Q by turning on one switch circuit Ssa. As described above, by operating or manipulating the system, a single power supply 132 and constant current circuit 118 can be used to test a number of transistors 117Q.

[0381] As shown in Figure 39(a), when switches St1 (124s1) to Stn (124sn) are turned on (a voltage of Vg is applied to Vge), constant currents Id1 to Idn flow through transistor 117. For example, the application time of constant current Id is ton, and constant currents Id1 and Id2 are applied to transistor 117 sequentially at intervals of time tcycle. When transistor 117 is turned on, the channel voltage of transistor 117 changes sequentially.

[0382] For example, constant currents Id1 and Id2 do not overlap in time. Therefore, the output capacity of the current power supply 121 only needs to be the output capacity required to test one transistor 117.

[0383] As shown in Figure 39(a), the on-voltages (Vg) applied to the gate terminals of each transistor 117 are controlled so as not to overlap in time. Preferably, the interval between each constant current Id (Id1 to Idn) is 1 μs or more. The driving method and control method described in other embodiments of the present invention are implemented for each transistor 117. The constant current Ic supplied to each transistor 117Q is supplied by sequentially turning on the switches Ssa (Ssa1 to Ssan) to each transistor 117Q.

[0384] The voltages Vi (Vi1~Vin) corresponding to the terminal voltages of transistor 117 are selected by selector 127 in synchronization with switch Ssa (Ssa1~Ssan). For example, when current Ic is supplied to transistor 117Q1, selector 127 selects the terminal voltage of transistor 117Q1. When current Ic is supplied to transistor 117Q3, selector 127 selects the terminal voltage of transistor 117Q3. The selected voltage Vi is supplied to the temperature measurement circuit 115. Other configurations and operations are the same as those described in other embodiments, so their explanation will be omitted.

[0385] In the timing chart of Figure 39(a), transistors 117Q1 to 117Q5 (for example, five transistors 117 are used for testing) are sequentially subjected to an on-voltage (Vg), and a constant current Id is applied to transistor 117 to perform the test.

[0386] However, during the test, transistor 117 may break down, stopping the test current to that transistor 117. Alternatively, transistor 117 may degrade, stopping the test current to that transistor 117.

[0387] Figure 39(b) shows the state when the test current to transistor 117Q3 is stopped. When transistor 117Q3 is stopped (or is stopped), no Vg voltage is applied to transistor 117Q3 between t3 and t4, and the voltage applied to each gate of transistor 117Q3 is maintained at 0V.

[0388] If an ON voltage is not applied to the gate voltage of transistor 117Q3, the power supply 132 will not supply test current Id during that period, resulting in no current flowing through the power supply wiring 2 and the corresponding switch circuit 124 not being turned on. This causes changes in the thermal state and other conditions from the test state shown in Figure 39(a). Furthermore, the surge voltage and surge current during the test will change, making it impossible to maintain a constant test state.

[0389] In Figure 39(b), for this task, the test current to transistor 117Q3 is stopped, but between t3 and t4, a Vg voltage is applied to transistor 117Q4, and the current output by the current power supply 121 is kept constant. In other words, during the period when the on-voltage of the stopped transistor is applied, the next transistor is turned on, maintaining a state where the transistors are turned on sequentially. This results in a pre-emptive operation.

[0390] It goes without saying that the matters illustrated in Figures 22, 23, 24, 25, 27, 28, 31, 32, 33, 34, 35, 36, 39, etc., and described in the specification can be combined in part or in whole. Furthermore, it goes without saying that the embodiments described in this specification and drawings can be combined in part or in whole.

[0391] It goes without saying that the matters illustrated in Figures 22, 23, 24, 25, 27, 28, 31, 32, 33, 34, 35, 36, 39, etc., and described in the specification, can be applied to the embodiments in Figures 1, 2, 3, 4, 5, and 6, for example, or can be combined in part or in whole with each other.

[0392] Figure 29 is a timing chart of the signals applied to transistor 117, etc. Vdata is the data that controller 111 applies to DA converter circuit 508. Vdata determines, varies, or sets the voltages output by DA converter circuit 508a and DA converter circuit 508b.

[0393] The switching circuit 605 selects the voltage output by either the DA converter circuit 508a or the DA converter circuit 508b and applies it to the gate driver circuit 113 as a gate control signal Vsg. Therefore, since the switching circuit 605 only selects either the V1 voltage or the V2 voltage and outputs it as the gate control signal Vsg, the changes in the V1 and V2 voltages are rapid.

[0394] In Figure 29(a), transistor 117 is off during the period when voltage V0 is applied. At time t1, the voltage Vsg is set to voltage V1 by Vdata. Voltage V1 is applied to the gate terminal of transistor 117, and at t2 after the period tc, current Id is supplied to transistor 117 from the voltage generation circuit 509.

[0395] Next, switch circuit 124b is turned on during the period from t4 to t6, short-circuiting the channels of transistor 117 and discharging the charge. Also, switch circuit 122b, which is connected to voltage generation circuit 509, is opened.

[0396] At t5, the Vsg voltage becomes the V2 voltage due to Vdata, and the V2 voltage is applied to the gate terminal of transistor 117, turning transistor 117 strongly on. At t6, the switch circuit 507 turns on, and a constant current Ic is applied to transistor 117 (as shown in Figures 1 and 2) for the duration of the te period to obtain temperature information. From the Vi voltage obtained during the period of constant current Ic application, the temperature measurement circuit 115 processes the temperature information Tj.

[0397] The tf period is set to a period of 2 milliseconds or less. Preferably, the tc period and td period are 1 millisecond or less. When the test current Id is applied, the transistor 117 generates heat and its temperature rises. The temperature rise due to heat generation corresponds to the change in the characteristics of the transistor 117. Therefore, by acquiring or measuring the temperature of the transistor 117, the degradation state and characteristic changes of the transistor 117 can be understood.

[0398] When the test current Id is stopped, transistor 117 cools down. Therefore, after stopping the test current Id, it is necessary to apply a constant current Ic for a short period of time on the millisecond level to obtain the temperature information Tj of transistor 117.

[0399] The semiconductor testing apparatus of the present invention can obtain temperature information Tj by applying a constant current Ic within a short time of 2 milliseconds after the test current Id has stopped. Therefore, since the temperature of the transistor 117 is maintained, changes in the characteristics of the transistor 117 can be measured or acquired accurately and precisely.

[0400] As shown in Figure 29, after a period ta in which a load current is applied to transistor 117, a period tb is provided in which the V2 voltage is applied to transistor 117 in order to obtain temperature information. After the test current Id is stopped, a constant current Ic is applied for the duration of the tb period within a period of 2 milliseconds or less to obtain temperature information.

[0401] In the embodiment shown in Figure 29, a voltage V1 was applied to supply a test current Id, and then a constant current Ic was supplied to the voltage V2 to obtain temperature information Tj. The present invention is not limited to this embodiment.

[0402] Figure 30 is an explanatory diagram of an embodiment in which temperature information Tj is obtained before and after the application of current Id. The temperature information Tj obtained is obtained in the state when the transistor 117 is cooled down before the application of current Id, and in the state when the temperature rises after the application of current Id. By obtaining two sets of temperature information Tj, one for the state when the temperature is cooled down and one for the state when the temperature rises, the characteristic changes and degradation state of the transistor 117 can be obtained with greater accuracy.

[0403] Figure 30 is a timing chart of the signals applied to transistor 117, etc. The V2 voltage is applied before and after the test current Id is passed. While the V2 voltage is applied, a constant current Ic is applied to transistor 117 to acquire or measure temperature information Tj. Before applying the constant current Ic, the switch circuit 124b is turned on to discharge the charge between the channels (collector terminal to emitter terminal) of the transistor 117.

[0404] During the period when voltage V0 is applied, transistor 117 is off. At t0, voltage V2, determined by Vdata, is applied as Vsg to the gate terminal of transistor 117. During the period when voltage V2 is applied, a constant current Ic is applied to transistor 117, and the inter-channel voltage Vi of the transistor is measured. The Vi voltage is the Vi voltage when transistor 117 is not energized, and after the test current Id has been applied and it has cooled down. This Vi voltage also contains information about the degradation state and characteristic changes of transistor 117. Therefore, useful information can be obtained by comparing and understanding the changes in Vi voltage during load cycle tests.

[0405] At time t1, the Vsg voltage is set to the V1 voltage by Vdata. The V1 voltage is applied to the gate terminal of transistor 117, and at t2 after the tc period, the voltage generation circuit 509 supplies current Id to transistor 117.

[0406] Next, switch circuit 124b is turned on during the period from t4 to t6, short-circuiting the channels of transistor 117 and discharging the charge. Also, switch circuit 122b, which is connected to voltage generation circuit 509, is opened.

[0407] At t5, the Vsg voltage becomes the V2 voltage due to Vdata, and the V2 voltage is applied to the gate terminal of transistor 117, strongly turning on transistor 117. At t6, the switch circuit 507 turns on, and a constant current Ic is applied to transistor 117 in Figure 1 for the duration of te to obtain temperature information. From the Vi voltage obtained during the application period of the constant current Ic, the temperature measurement circuit 115 processes the temperature information Tj. This Vi voltage is the temperature information of transistor 117 immediately after the test current Id is applied.

[0408] By applying a test current Id, the transistor 117 generates heat and its temperature rises. The temperature rise due to heat generation occurs corresponding to the state of change in the characteristics of the transistor 117. Therefore, by obtaining or measuring the temperature of the transistor 117, the deterioration state and characteristic changes of the transistor 117 can be grasped. Also, the state of change due to the application of the test current Id to the transistor 117 can be obtained from Tj before energizing the test current Id and Tj after energizing the test current Id. Therefore, the characteristic changes, etc. of the transistor 117 can be accurately and precisely measured or obtained.

[0409] The timing charts of FIGS. 29 and 30 illustrate the application of the test current Id and the constant current Ic to the transistor 117. The load test and the avalanche test are performed by turning on and off the transistor 117 for tens of thousands of cycles or more.

[0410] FIG. 37 is a timing chart diagram when the test current Id and the constant current Ic are applied in a cycle ts. The V1 voltage is applied for the ta period, and the V2 voltage is applied for the tb period. After the energization period of the transistor 117, the V0 voltage is applied to turn off the transistor 117. The load test and the avalanche test are performed with the V1 voltage, the V2 voltage, and the V0 voltage as one cycle ts. Note that FIG. 37 is an example in which the test method of FIG. 29 is performed in a ts cycle, but it is needless to say that it can be similarly applied to FIG. 30.

[0411] Also, in FIGS. 29, etc., the V0 voltage is used as the off voltage, but the V0 voltage is not limited to a single level of potential. For example, it may be made plural such as the V0a voltage and the V0b voltage, and a plurality of off voltages may be used. For example, the off voltage before changing to the V1 voltage may be the V0a voltage for a period of 10 milliseconds or less, and the application period of the other off voltage may be the V0b voltage. It is preferable that the potential levels of the V0a and V0b voltages are such that V0a < V0b. By lowering the V0a voltage, the change rate from the V0a voltage to the V1 voltage becomes large, and the intermediate state of the on-off operation becomes short.

[0412] Figures 7, 8, and 9 are explanatory diagrams illustrating the connection configuration and power supply wiring of the semiconductor device testing apparatus of the present invention. The N electrode terminal of transistor 117 is connected to AGND. AGND is, for example, the ground potential. As shown in Figure 9, the present invention allows for arbitrary changes to the wiring connections by changing the connections of the short-circuit plug 501 and the fork plug 205.

[0413] The gate control signal Vsg applied to the gate terminal g of transistor 117 is referenced to the potential of the emitter terminal e. If V1 is the voltage that turns on transistor 117, then when the voltage V1 is applied from the AGND potential, transistor 117 will be in the ON state.

[0414] In Figure 7, semiconductor elements 117a, 117b, and 117c are connected to the conductor plates 204d and 204b via the fork plug 205.

[0415] Figure 26 is an explanatory diagram of a semiconductor device testing apparatus and a semiconductor device testing method in another embodiment of the present invention. An example of the semiconductor device 117 is shown in Figure 40, etc. The semiconductor device 117 is connected to parts A, B, and C in Figure 26. In Figure 26, three semiconductor devices are tested simultaneously or sequentially, but the present invention is not limited to this. There may be two, or four or more. Figure 38 is a timing chart diagram for the conductor element test apparatus and semiconductor element test method shown in Figure 26.

[0416] The sample connection circuit 203 is connected to the Vsg signals applied to the gate terminals of three semiconductor elements 117. Each Vsg signal controls the on / off state of the semiconductor elements 117. A constant current Ic is sequentially applied to each semiconductor element 117, and the inter-channel voltage Vi of the semiconductor elements 117 is measured.

[0417] The embodiment shown in Figure 26 is an embodiment in which multiple semiconductor elements 117 are tested simultaneously or sequentially. The semiconductor elements 117 are controlled by a single controller circuit board 111.

[0418] Similar to Figure 29, before applying the constant current Ic, the switch circuit 124b is turned on to set the inter-channel voltage of the semiconductor element 117 to 0V. The charge between channels is also discharged. At this time, the switch circuit 124a of the semiconductor element 117 through which the constant current Ic flows is turned on. Furthermore, the transistor to which the test voltage or test current is applied during the test is selected by turning on the switch circuit 124a.

[0419] A constant current circuit 121, a voltage generation circuit 509, and a variable capacitance capacitor 505 are connected in parallel to the semiconductor element 117. The constant current circuit 121 is selected by switch circuit 122a, the voltage generation circuit 509 is selected by switch circuit 122b, and the variable capacitance capacitor 505 is selected by switch circuit 506b. The coil 502 is selected to be inserted into or not inserted into the circuit system by switch circuit 506a.

[0420] In Figure 29, the gate control signals Vsg (gate control signals Vsga, Vsgb, and Vsgc) are the same as in Figure 29 or Figure 30, and the V0 voltage, the V1 voltage during the ta period, and the V2 voltage during the tb period are repeatedly applied to each semiconductor element 117.

[0421] During the ta period, a current Id flows from the constant current circuit 121 or the voltage generation circuit 509. The switch circuit 124a (switch circuit 124aa, switch circuit 124ab, switch circuit 124ac, ...) selects which semiconductor element 117 (conductor element 117a, conductor element 117b, conductor element 117c, ...) to which the current Id flows. The switch circuit 124a is controlled by the controller 111. Each semiconductor element 117 is selected in ts2 cycles and tested by applying a current Id.

[0422] During the tb period, a constant current Ic is supplied to each semiconductor element 117, and the inter-channel voltage Vi of each semiconductor element 117 is measured. Temperature information Tj is obtained from the measured voltage Vi. Before the application of the constant current Ic, the switch circuit 124b is turned on to discharge the charge between the channels of the semiconductor element 117.

[0423] The present invention has been described as an example of measuring or acquiring channel voltages (collector-emitter voltage, drain-source voltage, etc.) of transistors and the like. The present invention is not limited to this.

[0424] For example, in Figures 2 and 7, a method is illustrated in which the resistance value of the variable resistor circuit 125 is set to a predetermined value, and the current flowing through the variable resistor circuit 125 is measured. Current (leakage current) flows through the variable resistor circuit 125 to the gate (base) terminal of the transistor 117. By measuring the leakage current, the characteristic changes and degradation state of semiconductor elements 117 such as transistors can be tested or evaluated.

[0425] Leakage current measurements are performed by varying or setting the g terminal voltages (V2, V1, V0, Vn) as shown in Figures 3, 4, 5, 6, 29, 30, 31, 32, 33, 34, 35, and 36. The output voltage of the gate driver circuit 113 is also changed, variable, or set to a predetermined value. Furthermore, the c and e terminal voltages of the semiconductor element 117 are set to a predetermined voltage or AGND voltage, or are varied. The direction of the current flowing through the variable resistor circuit 125 is measured or acquired as it changes between the positive and negative directions.

[0426] In the embodiments of the present invention, the transistor 117 to be tested is described using an IGBT as an example, but it is not limited to this. For example, it may be a two-terminal element such as a diode. Furthermore, it is not limited to semiconductor elements, but any electrical element such as a capacitor or resistor can be used. It goes without saying that the matters and contents described in this specification and the drawings can be combined with each other.

[0427] Figures 22, 23, 24, 25, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, and 39 are explanatory diagrams of a test method for the semiconductor element 117 of the present invention as one embodiment. Needless to say, each embodiment can be combined with others.

[0428] For example, it goes without saying that this can be combined with the test apparatus or test method described in Figures 1, 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0429] Furthermore, it goes without saying that these can be combined with the structures or configurations shown in Figures 11, 12, 13, 14, 15, 16, 17, 18, 19, and 20. Furthermore, it goes without saying that it can be combined with 21 different circuit configurations or driving methods.

[0430] Although the present invention has been specifically described above based on embodiments, it goes without saying that the present invention is not limited thereto and can be modified in various ways without departing from its essence. It goes without saying that the matters or contents described herein and in the drawings may be combined in whole or in part. [Industrial applicability]

[0431] This invention provides a semiconductor device testing apparatus and semiconductor testing method that allows for easy connection changes according to the test content of semiconductor devices such as transistors and the number of semiconductor devices being tested simultaneously, and that effectively addresses noise generated during testing. Furthermore, it enables accurate acquisition of transistor temperature information. [Explanation of Symbols]

[0432] 111 Controller circuit board (controller) 112 Gate signal control circuit 113 Gate driver circuit 115 Temperature measurement circuit 116 Operational Amplifier Circuit (Buffer Amplifier Circuit) 117 Semiconductor devices (transistors, etc.) 118 Constant current circuit 121 Current Generation Circuit 122 Switch Circuit 124 Switch Circuit 125 Variable Resistor Circuit 131 Control Rack 132 Power supply 133 Control Circuit 134 Heating and Cooling Plate 135 Circulating water pipe 136 Chiller 201 Switch Circuit Board 202 Connector 203 Sample Connection Circuit 204 Conductor Plate 205 Fork Plug 206 connection pins 207 Motherboard 208 connector 209 Device control circuit board 210 cabinets 211 Connection Wiring 212 Power wiring 213 Connector 214 Bulkhead 215 Bulkhead 216 Opening 217 Bulkhead 218 Connection Structures 219 connecting bolts 220 Contact area 221 Fixing screws 222 Signal Wiring 223 Heat Pipe 224 Fixing screws 225 Contact point 226 element terminals 227 Cooling fan 228 heat dissipation fins 231 Heat pipe fittings 232 Connection pressure section 233 Connection holding part 236 Spring (Pressure fitting) 237 Position fixing screws 238 screw holes 239 Spring holes 240 positioning screw holes 251 Convex part 252 Groove 311 Pressing tool 312 Insulating board 313 Pressing tool mounting plate 315 Insulation part 501 Short-circuit plug 502 Coil 503 Shield Case 504 Shield Case 505 Variable Capacitor 506 Switch Circuit 507 Switch Circuit 508 DA converter circuit 509 Voltage generation circuit 510 Mounting plate 511 Fixed plate 512 Signal line insertion section 514 Insertion hole 515 fixing hole 516 screw holes 517 Mounting holes 518 Groove 521 Temperature Sensor 601 AC / DC Converter Circuit 602 Capacitor 603 Reference Voltage Circuit 604 Transistor 605 Switching Circuit

Claims

1. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A constant current circuit is provided to supply a constant current between the first terminal and the second terminal of the semiconductor element or semiconductor module. A driver circuit that applies an off voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage. When the first ON voltage is applied, the test current is supplied to the semiconductor element or semiconductor module. A power semiconductor device test apparatus characterized by supplying the constant current to the semiconductor device or semiconductor module when the second ON voltage is applied, measuring the terminal voltage, and stopping or interrupting the test or changing the test conditions based on the terminal voltage.

2. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A driver circuit that applies an off voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage. When the first ON voltage and the second ON voltage are applied, the test current is supplied to the semiconductor element or semiconductor module. A power semiconductor device test apparatus characterized by measuring the terminal voltage when the second ON voltage is applied, and stopping or interrupting the test or changing the test conditions based on the terminal voltage.

3. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A constant current circuit is provided to supply a constant current between the first terminal and the second terminal of the semiconductor element or semiconductor module. A driver circuit that sequentially applies an off voltage, a second on voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage. When the first ON voltage is applied, the test current is supplied to the semiconductor element or semiconductor module. A power semiconductor device test apparatus characterized by supplying the constant current to the semiconductor device or semiconductor module when the second ON voltage is applied, measuring the terminal voltage, and stopping or interrupting the test or changing the test conditions based on the terminal voltage.

4. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A constant current circuit is provided to supply a constant current between the first terminal and the second terminal of the semiconductor element or semiconductor module. A driver circuit that applies an off voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage. When the first ON voltage is applied, the test current is supplied to the semiconductor element or semiconductor module. When the second ON voltage is applied, the constant current is supplied to the semiconductor element or semiconductor module. Multiple semiconductor elements or semiconductor modules are connected to the power supply circuit. The power semiconductor device test apparatus is characterized in that the test current is supplied to one semiconductor device or semiconductor module selected at the same time, the terminal voltage is measured, and the test is stopped or interrupted or the test conditions are changed based on the terminal voltage.

5. The switch circuit board further comprises a connecting member, a switch circuit, and a conductor plate. The conductor plate has a portion that protrudes from the switch circuit board, The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, characterized in that the connecting member is connected to the protruding portion.

6. It further includes a switch circuit, The switch circuit is connected to the output terminal of the power supply circuit. The operation of the aforementioned switch circuit short-circuits the output terminal of the power supply circuit, After the power supply circuit supplies the test current to the semiconductor element or semiconductor module, After operating the aforementioned switch circuit, The power semiconductor device testing apparatus according to claim 1, claim 3, or claim 4, characterized in that it supplies the constant current to the semiconductor device or semiconductor module.

7. The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, further comprising a temperature sensor disposed on at least one of the first terminal and the second terminal.

8. A resistor circuit is connected between the output of the driver circuit and the gate terminal. The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, characterized in that the resistance value of the resistor circuit when the first ON voltage is applied and the resistance value of the resistor circuit when the second ON voltage is applied can be changed.

9. The voltage value of the first ON voltage described above is variable. The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, characterized in that the second on-voltage is a higher voltage than the first on-voltage.

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