High-pressure vapor-phase hydrogen oxide supply device, and high-pressure substrate processing apparatus and method utilizing the same.

Abstract

To provide a high-pressure gaseous hydrogen oxide providing device, and a high-pressure substrate processing apparatus and method using the same.SOLUTION: A high-pressure substrate processing method includes the steps of: reacting a hydrogen gas and an oxygen gas; obtaining a generated hydrogen oxide having a first pressure; converting the generated hydrogen oxide into a processed gaseous hydrogen oxide having a second pressure higher than the first pressure and an atmospheric pressure; and allowing the processed gaseous hydrogen oxide to act on a substrate to be processed in a processing chamber. The step of converting the generated hydrogen oxide into the processed gaseous hydrogen oxide having the second pressure higher than the first pressure and the atmospheric pressure includes a step of injecting an auxiliary gas into the processing chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches the second pressure.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present invention relates to a high-pressure substrate processing apparatus and method, and a high-pressure gas-phase hydrogen peroxide providing device used therefor.

Background Art

[0002] Generally, various processes are performed on a semiconductor substrate during the progress of a semiconductor device manufacturing process. Examples of such processes include oxidation, nitridation, ion implantation, and deposition processes. There is also a hydrogen or deuterium heat treatment process for improving the interface characteristics of semiconductor devices.

[0003] The manufacturing process is roughly classified into a vacuum process and a high-pressure process according to the pressure of the gas acting on the substrate. The former has a pressure lower than atmospheric pressure, and the latter has a pressure higher than atmospheric pressure.

[0004] Since both processes have different natures and characteristics, something that was not a problem in one process may cause a major problem in the other process. For example, when using water vapor such as in wet oxidation, impurities can become a major problem in the high-pressure process, unlike the vacuum process.

[0005] The above-mentioned background art is technical information that the inventor holds or acquired during the derivation process of the embodiments of the present invention, and is not necessarily known art publicly available to the general public before this application.

Summary of the Invention

Problems to be Solved by the Invention

[0006] An object of the present invention is to provide a high-pressure gas-phase hydrogen peroxide providing device that can effectively remove impurities in a process using high-pressure gas-phase hydrogen peroxide and prevent quality defects of a substrate processed by the corresponding process, and a high-pressure substrate processing apparatus and method using the same.

[0007] Another object of the present invention is to provide a high-pressure gas-phase hydrogen oxide supply device that can prevent the generation of unreacted gas during the production of high-pressure gas-phase hydrogen oxide, or remove any unreacted gas that has been generated, thereby preventing the risk of explosion, as well as a high-pressure substrate processing apparatus and method utilizing the same. [Means for solving the problem]

[0008] A high-pressure substrate processing method according to one aspect of the present invention for achieving the above-mentioned problems may include the steps of: reacting hydrogen gas and oxygen gas; obtaining generated hydrogen oxide having a first pressure; converting the generated hydrogen oxide into processed gas-phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure; and acting the processed gas-phase hydrogen oxide on the substrate to be processed in a processing chamber.

[0009] Here, the step of converting the generated hydrogen oxide into a treated gas phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure may include the step of injecting an auxiliary gas into the treatment chamber in addition to the gas phase hydrogen oxide obtained from the generated hydrogen oxide so that the gas phase hydrogen oxide obtained from the generated hydrogen oxide in the treatment chamber reaches the second pressure.

[0010] Here, the step of converting the generated hydrogen oxide into treated gaseous hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure may include the steps of obtaining liquid hydrogen oxide from the generated hydrogen oxide, pressurizing the liquid hydrogen oxide, and vaporizing the pressurized liquid hydrogen oxide to obtain treated gaseous hydrogen oxide.

[0011] A high-pressure substrate processing apparatus according to another aspect of the present invention may include an internal chamber formed to contain a processing gas containing processing gas phase hydrogen oxide and having a processing pressure higher than atmospheric pressure, and a substrate to be processed by the processing gas; an external chamber formed to contain the internal chamber and having a protective gas having a protective pressure set in relation to the processing pressure; a generating module formed to react hydrogen gas and oxygen gas to generate hydrogen oxide having a generation pressure lower than the processing pressure; and a conversion module formed to pressurize the generated hydrogen oxide and convert it into processing gas phase hydrogen oxide having the processing pressure.

[0012] Here, the conversion module may include an auxiliary gas line formed in the internal chamber to which an auxiliary gas is injected in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the internal chamber reaches the processing pressure.

[0013] Here, the conversion module may include a vaporization heater configured to vaporize the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gas-phase hydrogen oxide.

[0014] Here, either the generation module or the conversion module may further include a water tank formed to contain liquid-phase hydrogen oxide obtained from the generated hydrogen oxide and communicating with the vaporization heater.

[0015] Here, the conversion module may further include a pump positioned between the water tank and the heater, which is formed to pressurize and pump the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide toward the internal chamber.

[0016] Here, the conversion module may further include a discharge line formed to discharge unreacted gases from the water tank, which are hydrogen gas and oxygen gases that have not participated in the reaction, and an injection line formed to inject a purge gas into the water tank for purging the unreacted gases.

[0017] The present invention further includes a heating module disposed within the external chamber to heat the processing gas to a processing temperature, wherein the vaporization heater is located within the external chamber.

[0018] A high-pressure vapor-phase hydrogen oxide supply device for a high-pressure substrate processing apparatus according to another aspect of the present invention includes a generating module formed to react hydrogen gas and oxygen gas to generate hydrogen oxide having a generating pressure lower than the processing pressure for processing the substrate to be processed in the high-pressure substrate processing apparatus, and a conversion module formed to pressurize the generated hydrogen oxide to convert it into processed vapor-phase hydrogen oxide having the processing pressure, wherein the processing pressure may be higher than atmospheric pressure.

[0019] Here, the conversion module may include an auxiliary gas line formed in the high-pressure substrate processing apparatus to inject an auxiliary gas in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide into the processing chamber where the substrate to be processed is placed, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches the processing pressure.

[0020] Here, the conversion module may include a vaporization heater configured to vaporize the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gas-phase hydrogen oxide.

[0021] Here, either the generation module or the conversion module may further include a water tank formed to contain liquid-phase hydrogen oxide obtained from the generated hydrogen oxide and communicating with the vaporization heater.

[0022] Here, the conversion module may further include a pump disposed between the water tank and the vaporization heater and configured to pressurize and pump the liquid-phase hydrogen peroxide obtained from the generated hydrogen peroxide toward the internal chamber.

Advantages of the Invention

[0023] According to the high-pressure gas-phase hydrogen peroxide providing device and the high-pressure substrate processing apparatus and method using the same according to the present invention configured as described above, after reacting hydrogen gas and oxygen gas to obtain generated hydrogen peroxide having a first pressure, the generated hydrogen peroxide is converted into processed gas-phase hydrogen peroxide having a second pressure higher than the first pressure and atmospheric pressure and is allowed to act on the substrate to be processed in the processing chamber. Therefore, the risk of impurities such as silica contaminating the substrate in the high-pressure process can be eliminated.

[0024] Also, by preventing the generation of unreacted gas that does not participate in the reaction of hydrogen gas and oxygen gas in the process of securing the processed gas-phase hydrogen peroxide, or by removing it even if it is generated, the risk of explosion due to unreacted gas during the process can be prevented.

Brief Description of the Drawings

[0025] [Figure 1] It is a conceptual diagram of a high-pressure substrate processing apparatus according to an embodiment of the present invention. [Figure 2] It is a block diagram for explaining the control configuration of the high-pressure substrate processing apparatus of FIG. 1. [Figure 3] It is a conceptual diagram showing the generation module of FIG. 2. [Figure 4] It is a conceptual diagram showing a generation module and a conversion module according to another embodiment of the present invention. [Figure 5] It is a cross-sectional view showing the water tank of FIG. 4. [Figure 6] It is a conceptual diagram showing a generation module and a conversion module according to still another embodiment of the present invention. [Figure 7] It is a flowchart showing a high-pressure substrate processing method according to still another embodiment of the present invention. [Figure 8] This flowchart shows a specific example of a process related to the first step in Figure 6. [Figure 9] This flowchart shows other specific processing examples related to the first step in Figure 6. [Modes for carrying out the invention]

[0026] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0027] The present invention is not limited to the embodiments disclosed below, but can be modified in various ways and implemented in a variety of different forms. However, these embodiments are provided to ensure the complete disclosure of the present invention and to fully inform those in the ordinary skill of the scope of the invention. Accordingly, the present invention should be understood to include all modifications, equivalents, or substitutes that fall within the technical spirit and scope of the present invention, as well as the substitution or addition of the configurations of one embodiment to the configurations of another embodiment.

[0028] The accompanying drawings are intended solely to facilitate understanding of the embodiments disclosed herein, and should not be understood as limiting the technical ideas disclosed herein, including all modifications, equivalents, or substitutions that fall within the concept and technical scope of the present invention. Components in the drawings may be exaggerated in size or thickness for ease of understanding, but this should not be interpreted as restricting the scope of protection of the present invention.

[0029] The terms used herein are used solely to describe specific examples or embodiments and are not intended to limit the invention. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise. In the specification, terms such as "includes" and "become" are intended to indicate the existence of features, figures, stages, operations, components, parts, or combinations thereof described herein. That is, terms such as "includes" and "become" in the specification should be understood as not preemptively excluding the possibility of the existence or addition of one or more other features, figures, stages, operations, components, parts, or combinations thereof.

[0030] Terms including ordinal numbers, such as "first," "second," etc., can be used to describe a variety of components, but the components are not limited by such terms. These terms are used solely for the purpose of distinguishing one component from another.

[0031] When it is mentioned that one component is "connected" or "linked" to another component, it should be understood that it may be directly connected or linked to the other component, but there may also be other components in between. Conversely, when it is mentioned that one component is "directly connected" or "linked" to another component, it should be understood that there are no other components in between.

[0032] When one component is described as being "above" or "below" another, it should be understood that this means not only that it is positioned directly above the other component, but that there may also be other components in between.

[0033] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as they would be generally understood by a person of ordinary skill in the art to which this invention pertains. Terms as defined in commonly used dictionaries should be interpreted as having the meaning consistent with their meaning in the context of the relevant art, and not as an ideal or overly formal meaning unless explicitly defined herein.

[0034] Figure 1 is a conceptual diagram of a high-voltage substrate processing apparatus according to one embodiment of the present invention.

[0035] Referring to this drawing, the high-voltage substrate processing apparatus 100 may include an internal chamber 110, an external chamber 120, an air supply module 130, and an exhaust module 140.

[0036] The internal chamber 110 forms a processing chamber for housing a substrate for processing. The internal chamber 110 may be made of a non-metallic material, such as quartz, to reduce contamination in a high-temperature and high-pressure working environment. Although simplified in the drawing, the lower end of the internal chamber 110 is provided with an internal door (not shown) that opens the processing chamber. The processing chamber is opened by the lowering of the internal door, and the substrate can be placed into the processing chamber. The temperature of the internal chamber 110 can reach several hundred to several thousand degrees Celsius by the operation of a heater (not shown) located outside the internal chamber 110. The substrate may be, for example, a wafer for semiconductor manufacturing. The wafer may be made of a material such as Si, SiC, or GaN. The substrate is not limited to a wafer, and other base structures for making circuits are also possible. For example, the substrate may include glass for display manufacturing. The holder may be a boat that can stack multiple layers of substrates to be processed.

[0037] The external chamber 120 is positioned to house the internal chamber 110. Unlike the internal chamber 110, the external chamber 120 is free from concerns about inducing contamination of the substrate and may therefore be made of metal. The external chamber 120 has a hollow shape with a housing space for housing the internal chamber 110. The external chamber 120 also has an external door (not shown) at its bottom, which can be lowered together with the internal door to open the housing space. The internal chamber 110 can be installed in the external chamber 120.

[0038] The air supply module 130 is configured to supply gas to the internal chamber 110 and the external chamber 120. The air supply module 130 has a gas supply unit 131 that communicates with the utilities (gas supply equipment) of the substrate processing plant. The gas supply unit 131 can selectively supply the internal chamber 110 with a process gas, such as hydrogen gas (H2), deuterium gas (D2), gaseous hydrogen oxide, fluorine gas (F2), ammonia gas (NH3), chlorine gas (Cl2), nitrogen gas (N2), etc. The gaseous hydrogen oxide can be used for wet oxidation, ALD (Atomic Layer Deposition), CVD (Chemical Vapor Deposition), heat treatment (Annealing), etc. The gas supply unit 131 can supply the external chamber 120 with a protective gas, such as an inert gas such as nitrogen gas or argon gas (Ar). The process gas and protective gas may simply be called process gases. The process gas is supplied to the internal chamber 110 or the external chamber 120 via the processing gas line 133 or the protective gas line 135. The protective gas supplied to the external chamber 120 is specifically supplied to the remaining space (protected space) in the external chamber 120, excluding the space occupied by the internal chamber 110.

[0039] The process gas is supplied at a pressure higher than atmospheric pressure (high pressure), for example, to create a pressure reaching several to tens of atmospheres from chambers 110 and 120. The processing pressure, which is the pressure of the processing gas, and the protective pressure, which is the pressure of the protective gas, can be maintained in a set relationship. For example, the protective pressure may be set to be approximately the same as the processing pressure, or slightly higher. Such a pressure relationship has the advantage of preventing the processing gas from leaking from the internal chamber 110 and preventing the internal chamber 110 from cracking. The protective pressure may be set to be slightly lower than the processing pressure, and in that case, a similar effect to that described above can be achieved.

[0040] The exhaust module 140 is configured for exhausting the process gas. An exhaust pipe 141 is connected to the top of the internal chamber 110 to exhaust the process gas from the internal chamber 110. Similarly, an exhaust pipe 145 is provided, connected to the external chamber 120, to exhaust the protective gas from the external chamber 120. Since these exhaust pipes 141 and 145 are integrated into one, the process gas is diluted with the protective gas during the exhaust process, resulting in a lower concentration.

[0041] The control configuration of the high-voltage substrate processing apparatus 100 will be explained with reference to Figure 2. Figure 2 is a block diagram illustrating the control configuration of the high-voltage substrate processing apparatus shown in Figure 1.

[0042] Referring to this drawing (and Figure 1), the high-voltage substrate processing apparatus 100 may further include, in addition to the aforementioned air supply module 130 and exhaust module 140, a heating module 150, a generation module 160, a conversion module 170, a sensing module 180, a control module 190, and a storage module 195.

[0043] The heating module 150 has a configuration that includes the aforementioned heater. The heater may be positioned within the outer chamber 120 so as to face the inner chamber 110.

[0044] The generation module 160 is configured to generate hydrogen oxide. Hydrogen oxide may include molecules in which oxygen and hydrogen are bonded, such as H2O, H2O2, and H2O3. Since the hydrogen oxide is produced by the generation module 160, it may be called generated hydrogen oxide. The generated hydrogen oxide may be gaseous hydrogen oxide or liquid hydrogen oxide. The former may be called generated gaseous hydrogen oxide, and the latter may be called generated liquid hydrogen oxide. The generated hydrogen oxide has a generation pressure. The generation pressure may be above atmospheric pressure and may be several to tens of atmospheres. The generation pressure may be lower than the processing pressure.

[0045] The conversion module 170 is configured to convert the generated hydrogen oxide into gaseous hydrogen oxide (treated gaseous hydrogen oxide) that acts on the substrate in the processing chamber. To this end, the conversion module 170 can pressurize the generated hydrogen oxide so that the generation pressure is higher than the processing pressure.

[0046] The conversion module 170 and the generation module 160 may be called a high-pressure gaseous hydrogen oxide supply device because they work cooperatively to provide high-pressure gaseous hydrogen oxide (the processed gaseous hydrogen oxide) to the processing chamber. The high-pressure gaseous hydrogen oxide supply device can also operate in conjunction with the air supply module 130. Specifically, the high-pressure gaseous hydrogen oxide supply device may be installed in the processing gas line 133 or installed to communicate with the processing gas line 133.

[0047] The sensing module 180 is configured to sense the environment of chambers 110 and 120. The sensing module 180 includes a pressure gauge 181 and a temperature gauge 185. The pressure gauge 181 and temperature gauge 185 may be installed in each of chambers 110 and 120. The sensing module 180 may also have a gas detector (not shown) for sensing specific gases.

[0048] The control module 190 is configured to control the air supply module 130 and the exhaust module 140, among others. Based on the sensing results from the sensing module 180, the control module 190 can control the operation of the air supply module 130 and the other components.

[0049] The storage module 195 is configured to store data, programs, and the like that the control module 190 can refer to for control purposes.

[0050] With this configuration, the control module 190 can control the operation of the air supply module 130 and the high-pressure gas-phase hydrogen oxide supply device based on the pressures of chambers 110 and 120 obtained by the pressure gauge 181. The operation of the air supply module 130 and the high-pressure gas-phase hydrogen oxide supply device allows the processing gas to fill the processing chamber at the processing pressure. The protective space can be filled with the protective gas at the protective pressure.

[0051] The control module 190 can also control the operation of the exhaust module 140 based on the pressures in chambers 110 and 120 obtained by the pressure gauge 181. The operation of the exhaust module 140 causes the process gas to be exhausted from the process chamber. The protective gas is exhausted from the protective space.

[0052] The control module 190 can control the operation of the heating module 150 based on the temperatures of the chambers 110 and 120 obtained by the temperature gauge 185. The operation of the heating module 150 allows the processing gas to reach the processing temperature required to process the substrate.

[0053] The specific configurations of the generation module 160 and the conversion module 170 will be explained with reference to Figures 3 to 6. For the sake of explanation, H2O will be used as an example of hydrogen oxide below, but such explanations can be applied equally to H2O2 and other hydrogen oxides. The gaseous state of H2O is water vapor, and the liquid state is water. Accordingly, the generated gaseous hydrogen oxide is called generated vapor, and the generated liquid hydrogen oxide is called generated water.

[0054] First, Figure 3 is a conceptual diagram showing the generation module in Figure 2.

[0055] Referring to this drawing, the generation module 160 is configured to produce gaseous hydrogen oxide (water vapor) using a gas as a starting material. The gas-based method differs from the method of obtaining water vapor using liquid-phase hydrogen oxide (water) as a starting material. The inventors have confirmed that by adopting a gas-based method, the generated H2O does not contain impurities (silica).

[0056] The generation module 160 may specifically include a case 161, input units 162 and 163, a reaction unit 165, a sensing unit 166, a discharge unit 167, and a guide line 169.

[0057] Case 161 has an internal space that houses the reaction section 165, which will be described later. Case 161 may be manufactured in a sealed form to prevent gas leakage. Gas leaking from the reaction section 165, etc., inside Case 161 is detected by a sensor (not shown) and exhausted to the outside of Case 161 by pumping. The internal space of Case 161 can be filled with an inert gas, such as nitrogen gas, or purged with nitrogen gas.

[0058] Input sections 162 and 163 are configured to receive gas from a gas supply unit 131 (see Figure 1). Oxygen gas (O2) is supplied to one of the input sections 162, 162, and hydrogen gas (H2) is supplied to the other input section 163. If necessary, other substances may be added to input sections 162 and 163 in addition to the oxygen gas and hydrogen gas. The line supplying the hydrogen gas to the other input section 163 may be formed as a double pipe. The hydrogen gas flows through the inner pipe of the double pipe, and a sensor (not shown) for detecting hydrogen gas leaks may be installed in the outer pipe. When a hydrogen gas leak occurs, the hydrogen gas can be exhausted from the internal space of the outer pipe. The hydrogen gas exhaust facility may be filled with, for example, an inert gas for explosion prevention. The hydrogen gas leak can also be linked to an interlock of the high-pressure substrate processing device 100.

[0059] The reaction section 165 is configured to react the oxygen gas and the hydrogen gas to produce the H2O. The reaction section 165 can maintain a temperature and pressure suitable for the reaction.

[0060] The sensing unit 166 is configured to acquire information related to the generated H2O. The sensing unit 166 may, for example, be used to sense the temperature and pressure of the generated hydrogen oxide. The sensing unit 166 can also sense unreacted gas (NG, see Figure 5). Unreacted gas (NG) refers to gas that has not participated in the reaction in the oxygen gas and hydrogen gas. Hydrogen gas as unreacted gas (NG) is explosive and therefore requires control.

[0061] The discharge section 167 is configured to discharge a substance. The inventors confirmed that below a reference pressure, the discharge is mainly the generated H2O. The inventors also confirmed that above the reference pressure, the discharge may contain some unreacted gas (NG). The reference pressure can be several atmospheres. The discharge may be a mixture of the generated H2O and unreacted gas (NG). Depending on the phase of the generated H2O, the discharge may be a gas or a mixture of gas and liquid.

[0062] The guide line 169 is configured to guide the generated H2O into the internal chamber 110. The guide line 169 can be the aforementioned processing gas line 133 (see Figure 1) or constitute a part thereof.

[0063] When only a gas (discharge gas) is discharged as the discharged material, the conversion module 170 (see Figure 2) has an auxiliary gas line (not shown) for injecting an auxiliary gas into the internal chamber 110. The auxiliary gas is injected into the internal chamber 110 to increase the pressure of the generated H2O, specifically the generated water vapor, and can constitute part of the processing gas. The auxiliary gas may be an inert gas, such as nitrogen gas.

[0064] The auxiliary gas line receives the auxiliary gas from the gas supply unit 131 (see Figure 1). The auxiliary gas line is connected to a guide line 169 at the rear end of the case 161, and the auxiliary gas can be supplied to the internal chamber 110 via the guide line 169. In an alternative embodiment, the auxiliary gas line may be configured so that the auxiliary gas is mixed with the oxygen gas, hydrogen gas, or generated H2O within the case 161.

[0065] With this configuration, when the generation module 160 operates below the reference pressure, it discharges a substance consisting almost entirely of the generated steam with virtually no unreacted gas (NG). Since there is no concern about unreacted gas (NG) in such a discharge, the generated steam can be supplied directly to the internal chamber 110 without any other processing steps. However, since the generation pressure is lower than the processing pressure, the auxiliary gas can pressurize the generated steam and convert it into processed steam.

[0066] In an alternative embodiment, the generated steam (which contains little to no unreacted gas (NG)) can be compressed by a compressor (not shown) before being injected into the internal chamber 110. In this case, the generated steam is pressurized at the processing pressure to become the processed steam. The processed steam can act on the substrate at the processing pressure without the help of the auxiliary gas.

[0067] In contrast to the above, if the generation module 160 operates at a pressure above the reference pressure, the discharge may contain unreacted gas (NG) along with the generated H2O. In that case, removal of the unreacted gas (NG) is necessary, and a new type of conversion module 170A can be used for this purpose.

[0068] Next, Figure 4 is a block diagram showing a generation module and a conversion module according to another embodiment of the present invention. In this drawing, the generation module 160 is the same as in the previously described embodiment, so it is simply represented by a box in the drawing.

[0069] Referring further to this drawing, the conversion module 170A is configured to convert the generated H2O into the treated steam and to remove unreacted gas (NG) during the conversion. For this purpose, the conversion module 170A can employ a configuration that performs phase conversion on the generated H2O (specifically, the generated steam).

[0070] The conversion module 170A may include a water tank 171, a pump 175, and a vaporization heater 179.

[0071] The water tank 171 is configured to contain the results obtained when the discharge is liquefied. When the water tank 171 is in a room temperature environment, the discharge can be liquefied in the water tank 171 without the need for separate cooling equipment. The results include condensed water (CW, see Figure 5) produced when the generated water vapor is liquefied. The condensed water (condensed liquid-phase hydrogen oxide) may be called water (liquid-phase hydrogen oxide) obtained from the generated H2O (generated hydrogen oxide) together with the generated water (generated liquid-phase hydrogen oxide). The results may further contain unreacted gas (NG). The specific configuration of the water tank 171 will be explained with reference to Figure 5.

[0072] Referring again to this drawing, the pump 175 is configured to pump condensate (CW). The condensate (CW) can be pumped toward the processing chamber. The condensate (CW) can also be pressurized by several or tens of atmospheres and then pumped. The pump 175 may be located between the water tank 171 and the vaporization heater 179.

[0073] The vaporization heater 179 is configured to vaporize condensed water (CW) to produce water vapor (acquired water vapor). For this purpose, the vaporization heater 179 heats the condensed water (CW). The acquired water vapor is supplied to the processing chamber along the guide line 169 to become the processed water vapor. The acquired water vapor may also be further pressurized or mixed with the auxiliary gas to become the processed water vapor. The acquired water vapor, together with the generated water vapor, may be called water vapor (gas-phase hydrogen oxide) obtained from the generated H2O (generated hydrogen oxide).

[0074] The vaporization heater 179 may be located outside the external chamber 120 (see Figure 1). In an alternative embodiment, the vaporization heater 179 may be located inside the external chamber 120, i.e., in the protective space. In this case, the vaporization heater 179 is placed in a higher temperature environment than outside the external chamber 120, and can therefore operate with less energy consumption. In another alternative embodiment, the vaporization heater 179 may be installed in the body of the internal chamber 110 (e.g., the internal door), and the condensate (CW) may be vaporized by the vaporization heater 179 as it flows through the body into the processing chamber.

[0075] Figure 5 is a cross-sectional view showing the water tank in Figure 4.

[0076] Referring to this drawing, the water tank 171 may have a housing 172 that limits the internal space. The discharged material is liquefied and separated into condensed water (CW) and unreacted gas (NG), which are then contained within the internal space. Specifically, the condensed water (CW) may be located in the lower part of the internal space, and the unreacted gas (NG) may be located in the upper part of the internal space. Since the unreacted gas (NG) and condensed water (CW) are separated from each other, they occupy different spaces.

[0077] The discharged material can be discharged to the housing 172 via the discharge line 173a. Condensed water (CW) can be drawn into the pump 175 via the suction line 173b. One end of the suction line 173b is in communication with the pump 175, and the other end, the suction port 173b', may be located in the condensed water (CW). By placing the suction port 173b' in the condensed water (CW), unreacted gas (NG) will not be drawn into the pump 175 via the suction line 173b.

[0078] Condensed water (CW) is supplied to the internal chamber 110 via pump 175 and vaporization heater 179, but unreacted gas (NG) is separated from the condensed water (CW) and is therefore not supplied to the internal chamber 110. The unreacted gas (NG) can be discharged to the outside of the internal space via discharge line 174a.

[0079] To more actively separate / remove unreacted gas (NG) from condensate water (CW), a purge gas can be injected into the internal space via injection line 174b. The purge gas purges the unreacted gas (NG) in the internal space, allowing it to be discharged more smoothly via discharge line 174a. The purge gas may be, for example, an inert gas such as nitrogen gas.

[0080] Figure 6 is a conceptual diagram showing a generation module and a conversion module according to another embodiment of the present invention.

[0081] Referring to this drawing, the generation module 160' is generally identical to the generation module 160 (see Figure 4) described above, but differs in that it has a water tank 168'. When the generated H2O is the generated water, the water tank 168' can contain the generated water (and the unreacted gas). The water tank 168' has generally the same configuration as the water tank 171 (see Figure 5) described above.

[0082] The conversion module 170B is generally identical to the aforementioned conversion module 170A, but differs in that it does not have a water tank 171.

[0083] With this configuration, the discharged material consists of either only the generated water or the generated water and the unreacted gas. In the water tank 168', the generated water and the unreacted gas are separated as described above. The pump 175 can pressurize and pump the generated water from the water tank 168' to the vaporization heater 179. In the water tank 168', purging of the unreacted gas can also be performed.

[0084] The high-voltage substrate processing method will be described below with reference to Figures 7 to 9 (and Figures 1 to 6).

[0085] Figure 7 is a flowchart illustrating a high-pressure substrate processing method according to yet another embodiment of the present invention.

[0086] Referring further to this drawing, the control module 190 controls the generation module 160 to react hydrogen gas and oxygen gas (S1).

[0087] The generation module 160 discharges a product generated by the reaction of the hydrogen gas and the oxygen gas. The discharge contains generated H2O having a first pressure (generation pressure) (S3).

[0088] The control module 190 controls the conversion module 170 to convert the generated H2O into processed steam having a second pressure (processing pressure) (S5). Specifically, the control module 190 controls the conversion module 170 to inject the auxiliary gas into the processing chamber in addition to the generated H2O (specifically, the generated steam). The auxiliary gas, together with the generated steam, causes the processing chamber to reach the second pressure (first conversion method). The second pressure is higher than the first pressure and atmospheric pressure, for example, reaching several atmospheres to tens of atmospheres.

[0089] The treated steam acts on the substrate in the treatment chamber (S7). The treated steam causes wet oxidation, heat treatment, and the like to be carried out on the substrate.

[0090] Figure 8 is a flowchart showing a specific example of a process related to one step in Figure 6.

[0091] Referring further to this drawing, the step of converting to treated steam (S5) is carried out using a phase change method, unlike before.

[0092] Specifically, the discharged gas liquefies, and condensed water (CW) is obtained in the water tank 171 (S11).

[0093] The control module 190 determines whether or not pressurization of the condensate (CW) is necessary (S13). Such a determination changes depending on the pressure of the condensate (CW).

[0094] The control module 190 controls the pump 175 to pressurize the condensate (CW) when necessary (S15). Pressurization of the condensate (CW) is performed before it vaporizes.

[0095] The control module 190 also controls the vaporization heater 179 to heat the condensate (CW) (S17). The heated condensate (CW) becomes the processed steam having the second pressure (second conversion method).

[0096] In an alternative embodiment, if the generated H2O is the generated water, pressurization (S13 and S15) and vaporization (S17) are performed on the generated water, which is not the condensate.

[0097] Figure 9 is a flowchart showing another specific process example related to one step in Figure 6.

[0098] Referring to this drawing, the step of converting to treated steam (S5) may also remove unreacted gas (NG).

[0099] Specifically, once the mixture is contained in water tanks 168' and 171, the unreacted gas (NG) is separated from the generated water or condensed water (CW) (S21).

[0100] The control module 190 determines whether or not removal of unreacted gas (NG) is necessary based on the amount of unreacted gas (NG) (S23). If the amount of unreacted gas (NG) is greater than or equal to the aforementioned standard amount, the control module 190 determines that removal is necessary.

[0101] To actively remove unreacted gas (NG), the control module 190 controls the air supply module 130 to inject the purge gas into the water tanks 168' and 171 (S25). This allows the unreacted gas (NG) to be discharged from the water tanks 168' and 171 to the outside. As a result, it is ensured that the unreacted gas (NG) is not injected into the processing chamber.

[0102] In this specification, a high-pressure substrate processing apparatus 100 has been described using a processing apparatus having a double chamber as an example, but the present invention is not limited thereto. The high-pressure vapor-phase hydrogen oxide supply device can also be applied to a processing apparatus having a single chamber. The single chamber consists of one housing and one door. A wafer substrate is placed inside the chamber, and a processing gas for processing the wafer substrate is supplied.

[0103] The configuration of the high-pressure substrate processing apparatus 100 can also be applied to a semi-double chamber, which is an intermediate form between the double chamber and the single chamber. The semi-double chamber has two housings {an inner housing and an outer housing} and one door. The two housings can be joined together by their own shapes or with the interposition of other members to form a closed space (corresponding to the protective space). Similar to the embodiments described above, the substrate can be placed in the processing chamber of the inner housing, the processing gas can be injected, and the protective gas can be injected into the closed space. Unlike the embodiments described above, the door cannot be completely protected by the protective gas and is exposed to the outside. The door may correspond to the outer door in the embodiments described above. The door can open and close the inner housing (and the outer housing).

[0104] Although this specification illustrates batch-type processing equipment, the present invention is not limited thereto. The present invention can also be directly applied to single-wafer type processing equipment. [Explanation of Symbols]

[0105] 100: High-pressure substrate processing apparatus 110: Inner chamber 120: Outer chamber 130: Air supply module 140: Exhaust module 150: Heating module 160, 160’: Generation module 170, 170A, 170B: Conversion module 180: Sensing module 190: Control module

Claims

1. The step of reacting hydrogen gas with oxygen gas, A step to obtain hydrogen oxide generated at a first pressure, A step of converting the generated hydrogen oxide into treated gas phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure, A high-pressure substrate processing method comprising the step of reacting the aforementioned treated gas phase hydrogen oxide with a substrate to be processed in a processing chamber.

2. The step of converting the generated hydrogen oxide into treated gas phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure is as follows: The high-pressure substrate processing method according to claim 1, further comprising the step of injecting an auxiliary gas into the processing chamber in addition to the gas-phase hydrogen oxide obtained from the generated hydrogen oxide so that the gas-phase hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches a second pressure.

3. The step of converting the generated hydrogen oxide into treated gas phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure is as follows: The step of obtaining liquid-phase hydrogen oxide from the generated hydrogen oxide, The steps include pressurizing the liquid phase hydrogen oxide, The high-pressure substrate processing method according to claim 1, further comprising the step of vaporizing the pressurized liquid-phase hydrogen oxide to obtain the processed gas-phase hydrogen oxide.

4. An internal chamber formed to house a processing gas containing processed gas phase hydrogen oxide and having a processing pressure higher than atmospheric pressure, and a substrate to be processed by the processing gas, An outer chamber is formed to house the inner chamber and contain a protective gas having a protective pressure set in relation to the processing pressure, A generation module is formed to generate hydrogen oxide having a generation pressure lower than the processing pressure by reacting hydrogen gas and oxygen gas, A high-pressure substrate processing apparatus, comprising a conversion module formed to pressurize the generated hydrogen oxide and convert it into the processed gas phase hydrogen oxide having the processing pressure.

5. The aforementioned conversion module is The high-pressure substrate processing apparatus according to claim 4, further comprising an auxiliary gas line formed by injecting an auxiliary gas into the internal chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the internal chamber reaches the processing pressure.

6. The aforementioned conversion module is The high-pressure substrate processing apparatus according to claim 4, comprising a vaporization heater formed to vaporize liquid-phase hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gas-phase hydrogen oxide.

7. Either the generation module or the conversion module is: The high-pressure substrate processing apparatus according to claim 6, further comprising a water tank formed to contain liquid-phase hydrogen oxide obtained from the generated hydrogen oxide and communicating with the vaporization heater.

8. The aforementioned conversion module is The high-pressure substrate processing apparatus according to claim 7, further comprising a pump disposed between the water tank and the vapor heater, and formed to pressurize and pump the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide toward the internal chamber.

9. The aforementioned conversion module is A discharge line is formed to discharge unreacted gases from the water tank, which are hydrogen gas and oxygen gas that have not participated in the reaction. The high-pressure substrate processing apparatus according to claim 7, further comprising an injection line formed to inject a purge gas into the water tank for purging the unreacted gas.

10. The system further includes a heating module positioned within the external chamber to heat the processing gas to a processing temperature, The aforementioned vaporization heater is The high-voltage substrate processing apparatus according to claim 6, which is disposed within the external chamber.

11. A generation module is formed to generate hydrogen oxide having a generation pressure lower than the processing pressure for processing the substrate in a high-pressure substrate processing apparatus by reacting hydrogen gas and oxygen gas, The system includes a conversion module formed to pressurize the generated hydrogen oxide and convert it into treated gas phase hydrogen oxide having the processing pressure, The aforementioned processing pressure is A high-pressure vapor-phase hydrogen oxide supply device for high-pressure substrate processing equipment, operating at a pressure higher than atmospheric pressure.

12. The aforementioned conversion module is A high-pressure gaseous hydrogen oxide supplying device for a high-pressure substrate processing apparatus according to claim 11, further comprising an auxiliary gas line formed in the processing chamber where the substrate to be processed is placed, to inject an auxiliary gas in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide into the processing chamber so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches the processing pressure.

13. The aforementioned conversion module is A high-pressure vapor-phase hydrogen oxide supply device for a high-pressure substrate processing apparatus according to claim 11, comprising a vaporization heater formed to vaporize the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide to generate the processed vapor-phase hydrogen oxide.

14. Either the generation module or the conversion module is: A high-pressure vapor-phase hydrogen oxide supply device for a high-pressure substrate processing apparatus according to claim 13, further comprising a water tank formed to contain liquid-phase hydrogen oxide obtained from the generated hydrogen oxide and communicating with the vaporization heater.

15. The aforementioned conversion module is A high-pressure vapor-phase hydrogen oxide supplying device for a high-pressure substrate processing apparatus according to claim 14, further comprising a pump disposed between the water tank and the vaporization heater, which is formed to pressurize and pump the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide toward the processing chamber in the high-pressure substrate processing apparatus where the substrate to be processed is placed.

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