Ag-based organic coordination nanoparticles, methods for producing the same, photoresist compositions and their use

Abstract

The present invention relates to Ag-based organic coordination nanoparticles, a method for producing the same, a photoresist composition and use thereof. m (R) n (Q) x ] y The production method involves placing a silver salt and a primary organic ligand in a sample bottle, dissolving them in an organic solvent, stirring for a certain period of time under specific temperature conditions, filtering, concentrating, crystallizing by cooling or evaporating, and finally recrystallizing in an organic solvent to obtain Ag-based organic coordination nanoparticles. This nanoparticle composition can be used as an electron beam, mid-UV, deep UV, and EUV photoresist.

Description

[Technical Field]

[0001] The present invention relates to the technical field of photoresists, and more particularly to Ag-based organic coordination nanoparticles, methods for producing the same, photoresist compositions, and uses thereof. [Background technology]

[0002] Photoresist is a corrosion-resistant thin film material whose solubility changes upon irradiation with ultraviolet light, electron beams, ion beams, extreme ultraviolet (EUV), or soft X-rays. It is widely used for pattern transfer in the manufacturing processes of high-end micro- and nanostructures, such as semiconductor integrated circuits, liquid crystal panel processing, and high-end optical devices. Due to the continuous advancement of semiconductor technology and the development of Moore's Law, semiconductor manufacturing processes are constantly shrinking, and therefore, there is a high demand for smaller processing feature sizes. To meet the demands of more advanced semiconductor manufacturing processes and achieve smaller feature sizes, photolithography technology has also developed, progressing from I-line, G-line, and deep ultraviolet (DUV) lithography (including 248nm KrF lithography and 193nm ArF lithography) to microfabrication techniques such as extreme ultraviolet lithography and electron beam lithography. After exposing and developing the photoresist film to form a photolithographic pattern, dry etching or wet etching is performed. While some base materials not covered by an adhesive film are directly etched, base surfaces covered by an adhesive film are protected from etching by the photoresist film. Etching resistance is a crucial evaluation metric for photoresists. Excellent etching resistance allows photoresists to protect the substrate surface from damage during the etching process, effectively simplifying the etching process and significantly improving the yield of the final etched product.

[0003] Extreme ultraviolet lithography (EUV) is attracting attention as a fundamental technology for next-generation semiconductor device manufacturing. EUV lithography is a patterning technique that uses EUV light with a wavelength of approximately 13.5 nm as the exposure light source. As can be seen from EUV lithography, it is possible to form very fine patterns (e.g., less than approximately 20 nm) in the exposure process during semiconductor device manufacturing. In exposure in the extreme ultraviolet band, the absorption rate of the photoresist itself, the reaction mechanism of solubility change after exposure, and the size distribution of the photoresist components greatly affect the overall performance of the photoresist. Due to the high absorption rate of metal elements to EUV radiation, metal-containing photoresist materials are attracting attention, and metal oxide nanoparticle photoresists are one of the research directions that are attracting attention. The Ober research group at Cornell University in the United States was the first to introduce the concept of metal oxide nanoparticles as a next-generation extreme ultraviolet photoresist material. These nanoparticles are generally synthesized by controlling the alkoxide hydrolysis of Zr or Hf in excess carboxylic acid, followed by precipitation to obtain ZrO2 or HfO2 nanoparticle photoresists containing organic ligands. The size of the corresponding nanoparticles is controlled to 2-5 nm, which is advantageous for photolithography of less than 20 nm. In order to further explore more efficient metal-organic nanophotoresists, this invention focuses on Ag-based organic ligand nanoparticle photoresists to produce photoresists with excellent photolithographic performance. [Overview of the project] [Problems that the invention aims to solve]

[0004] The problem that the embodiments of the present invention aim to solve is to provide novel Ag-based organic coordination nanoparticles, a method for producing the same, a photoresist composition containing the same, and a use thereof. [Means for solving the problem]

[0005] In this invention, the general formula is [Ag m (R) n (Q) x ] y Ag-based organic coordination nanoparticles are provided. In the formula, R can be selected from bis(diphenylphosphino)methane (dppm), bis(dicyclohexylphosphino)methane (abbreviation: dcpm), bis(diphenylamino)methane, N,N-bis(diphenylphosphino)amine (abbreviation: dppa), N,N,N',N'-tetramethyldiaminomethane, N,N,N',N'-tetraethyldiaminomethane, etc.

[0006] Q is CH3COO, C2H5COO, C3H7COO, i-C3H7COO, C4H9COO, C6H 13 COO, C9H 19 COO, C6H5COO, CF3COO, C2F5COO, C3F7COO, i-C3F7COO, C4F9COO, C6F 13 COO, C9F 19 Options such as COO, C6H5COO, etc., may be selected.

[0007] Here, the ranges of m, n, x, and y are all between 1 and 4.

[0008] Furthermore, Ag-based organic coordination nanoparticles, Ag2(dppm)2(CH3COO)2, Ag4(dppm)2(CH3COO)4, Ag4(dppm)2(CF3COO)4, Ag2(dppm)2(C2H5COO)2, Ag4(dppm)2(C2F5COO)4, Ag4(dppm)2(C4F9COO)4, Ag2(dcpm)2(CH3COO)2, or Ag4(dppa)2(CH3COO)4 It may also have this structure.

[0009] The crystal size of the Ag-based organic coordination nanoparticles is 1 nm to 4 nm, preferably 1 nm to 2 nm.

[0010] The above-mentioned Ag-based organic coordination nanoparticles are manufactured by the following method. Put the silver salt and the first organic ligand into a sample bottle respectively, add an organic solvent to dissolve them, stir for a certain period of time under specific temperature conditions, filter, concentrate, cool down for crystallization or evaporate for crystallization, and finally recrystallize in an organic solvent to obtain Ag-based organic coordination nanoparticles.

[0011] Furthermore, the ratio of the silver salt to the first organic ligand is 1:(0.5 - 1). The organic solvent is any one or more selected from ethyl acetate, butyl acetate, propylene glycol monoethyl ether acetate, propylene glycol methyl ether acetate, 1-ethoxy-2-propanol, tetrahydrofuran, methanol, ethanol, propanol, dichloromethane, and chloroform.

[0012] The stirring temperature is controlled at 0 - 120°C, preferably 15 - 80°C, more preferably 20 - 40°C.

[0013] The present invention further provides a photoresist composition containing the above nanoparticles.

[0014] Furthermore, the photoresist composition further contains a photoinitiator and an organic dispersion solvent. The photoinitiator is preferably 0.1wt% - 10wt% of the composition, and the nanoparticles are preferably 1wt% - 20wt% of the composition.

[0015] Furthermore, the photoinitiator is any one or more selected from N-hydroxynaphthalimide trifluoromethanesulfonic acid, 1,4-aminonaphthalenesulfonic acid, 2-amino-5,7-naphthalenedisulfonic acid, tert-butylphenyl iodonium perfluorooctanesulfonate, triphenylsulfonium perfluorobutanesulfonate, triphenylsulfonium perfluorobutyl, and triphenylsulfonium trifluoromethanesulfonate.

[0016] Furthermore, the organic dispersion solvent is any one or more selected from ethyl acetate, butyl acetate, propylene glycol monoethyl ether acetate, propylene glycol methyl ether acetate, 1-methoxy-2-propanol, propylene glycol mono-n-propyl ether, propylene glycol butyl ether, 1-ethoxy-2-propanol, methanol, ethanol, and propanol. The solvent is preferably 1-ethoxy-2-propanol.

[0017] [Method for patterning metal-organic coordination nanoparticles photoresist] The present invention further provides a method for forming a photolithography pattern. In this method, the above photoresist composition is used, the photoresist composition is dropped onto a substrate, a film is formed by spin coating, heated on a hot stage, and further exposed to an electron beam or medium ultraviolet light, deep ultraviolet light, extreme ultraviolet light, and developed with a developer.

[0018] Furthermore, the rotation speed of the spin coating is 1000 to 6000 rpm, the heating temperature of the hot stage is controlled at 50 to 110°C, and the heating time is controlled at 30 to 900 s.

[0019] Furthermore, the exposure dose is 5**0~8000 mJ / cm 2 is.

[0020] Furthermore, the developer is a mixture of any one or more selected from decalin, tetralin, indene, indane, quinoline, 1-methylnaphthalene, toluene, o-xylene, m-xylene, p-xylene, ethyl acetate, butyl acetate, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, propylene glycol mono-n-propyl ether, propylene glycol butyl ether, n-hexane, and cyclohexane, and the development temperature is room temperature or 20°C to 50°C.

[0021] The thickness of the pre-deposited layer after removal of the organic dispersion solvent may be 10 nm to 100 nm. Specifically, the thickness of the pre-deposited layer may be 10 nm to 20 nm, 20 nm to 30 nm, 30 nm to 40 nm, 40 nm to 50 nm, 50 nm to 60 nm, 60 nm to 70 nm, 70 nm to 80 nm, 80 nm to 90 nm, or 90 nm to 100 nm.

[0022] The base is selected from a silicon plate, and other bases insoluble in the developer may be used as needed.

[0023] Furthermore, the use of these nanoparticles is applied in the field of photoresists, particularly electron beam, medium ultraviolet, deep ultraviolet, and EUV photoresists. For masks, long-wavelength light sources above deep ultraviolet are used as transmission masks, extreme ultraviolet light sources as reflection masks, and electron beams are used for exposure according to a pattern set in software. [Effects of the Invention]

[0024] Compared to the prior art, the technical means of the present invention has the following advantages. The Ag-based organic coordination nanoparticles provided in the embodiments of the present invention have a special structure. When the photoacid generator is irradiated with ultraviolet light, it generates photoacid, and the photoacid interacts with the Ag-based organic coordination nanoparticles, changing the polarity of the Ag-based organic coordination nanoparticles and causing aggregation of the nanoparticles. Therefore, the solubility of the Ag-based organic coordination nanoparticles changes before and after exposure. Due to these properties, by using Ag-based coordination nanoparticles as a photoresist component, the photosensitive and light-shielded portions of the photoresist have different solubility in the developer. The photosensitive portion aggregates and its solubility in the developer decreases, while the light-shielded portion does not aggregate and dissolves in the developer, allowing for the removal of unexposed areas after development and obtaining a pattern of the desired shape. By using the Ag-based coordination nanoparticles of the present invention as a photoresist component, superior photolithography performance such as high resolution, high sensitivity, and low line roughness can be achieved. [Brief explanation of the drawing]

[0025] [Figure 1]This is the structural formula of the crystalline compound produced in Example 1 of the present invention. [Figure 2] This is the nuclear magnetic resonance hydrogen spectrum of the crystalline compound produced in Example 1 of the present invention. [Figure 3] This shows the results of a dynamic light scattering particle size test for Example 1 of the present invention. [Figure 4] This is the exposure pattern of Example 1 of the present invention. [Figure 5] This is the structural formula of Example 2 of the present invention. [Figure 6] This is the nuclear magnetic resonance hydrogen spectrum of Example 2 of the present invention. [Figure 7] This shows the results of a dynamic light scattering particle size test for Example 2 of the present invention. [Figure 8] This is the exposure pattern of Example 2 of the present invention. [Figure 9] This is the structure of Example 3 of the present invention. [Figure 10] This is the nuclear magnetic resonance hydrogen spectrum of Example 3 of the present invention. [Figure 11] This shows the results of a dynamic light scattering particle size test for Example 3 of the present invention. [Figure 12] This is the exposure pattern of Example 3 of the present invention. [Modes for carrying out the invention]

[0026] To facilitate understanding of the present invention, the invention will be described more comprehensively below with reference to the relevant drawings. The drawings show preferred embodiments of the invention. However, the invention can be realized in many different forms and is not limited to the embodiments shown herein. The purpose of providing these embodiments is to make the disclosure of the invention clearer and more comprehensive.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present invention pertains. The terms used herein in describing the present invention are for the sole purpose of describing specific embodiments and are not intended to limit the invention.

[0028] In this invention, the general formula is [Ag m (R) n (Q) x ] y Ag-based organic coordination nanoparticles are provided. In the formula, R can be selected from bis(diphenylphosphino)methane (dppm), bis(dicyclohexylphosphino)methane (abbreviation: dcpm), bis(diphenylamino)methane, N,N-bis(diphenylphosphino)amine (abbreviation: dppa), N,N,N',N'-tetramethyldiaminomethane, N,N,N',N'-tetraethyldiaminomethane, etc.

[0029] Q is CH3COO, C2H5COO, C3H7COO, i-C3H7COO, C4H9COO, C6H 13 COO, C9H 19 COO, C6H5COO, CF3COO, C2F5COO, C3F7COO, i-C3F7COO, C4F9COO, C6F 13 COO, C9F 19 Options such as COO, C6H5COO, etc., may be selected.

[0030] Here, the ranges of m, n, x, and y are all 1-4. Furthermore, Ag-based organic coordination nanoparticles, Ag2(dppm)2(CH3COO)2, Ag4(dppm)2(CH3COO)4, Ag4(dppm)2(CF3COO)4, Ag2(dppm)2(C2H5COO)2, Ag4(dppm)2(C2F5COO)4, Ag4(dppm)2(C4F9COO)4, Ag2(dcpm)2(CH3COO)2, or Ag4(dppa)2(CH3COO)4 It may also have this structure. The crystal size of the Ag-based organic coordination nanoparticles is 1 nm to 4 nm, preferably 1 nm to 2 nm.

[0031] The Ag-based organic coordination nanoparticles provided in the embodiments of the present invention have a special structure. When the photoacid generator is irradiated with ultraviolet light, it generates photoacid, and the photoacid interacts with the Ag-based organic coordination nanoparticles, changing the polarity of the Ag-based organic coordination nanoparticles and causing aggregation of the nanoparticles. Therefore, the solubility of the Ag-based organic coordination nanoparticles changes before and after exposure. Due to these properties, by using Ag-based coordination nanoparticles as a photoresist component, the photosensitive and light-shielded portions of the photoresist have different solubility in the developer. The photosensitive portion aggregates and its solubility in the developer decreases, while the light-shielded portion does not aggregate and dissolves in the developer, allowing for the removal of unexposed areas after development and obtaining a pattern of the desired shape. By using the Ag-based coordination nanoparticles of the present invention as a photoresist component, superior photolithography performance such as high resolution, high sensitivity, and low line roughness can be achieved.

[0032] The above-mentioned Ag-based organic coordination nanoparticles are manufactured by the following method. The silver salt and the first organic ligand are placed in separate sample bottles, dissolved in an organic solvent, stirred for a certain period of time under specific temperature conditions, filtered, concentrated, crystallized by cooling or evaporation, and finally recrystallized in an organic solvent to obtain Ag-based organic coordination nanoparticles.

[0033] Furthermore, the ratio of the silver salt to the first organic ligand is 1:(0.5~1). The organic solvent is one or more selected from ethyl acetate, butyl acetate, propylene glycol monoethyl ether acetate, propylene glycol methyl ether acetate, 1-ethoxy-2 propanol, tetrahydrofuran, methanol, ethanol, propanol, dichloromethane, and chloroform.

[0034] The stirring temperature is selected from 0 to 120°C, preferably 15 to 80°C, and more preferably 20 to 40°C.

[0035] In some embodiments of the present invention, a photoresist composition comprising Ag organic coordination nanoparticles is provided. The composition further comprises, in addition to the nanoparticles, a photoinitiator and an organic dispersion solvent, wherein the photoinitiator is preferably 0.1 wt% to 10 wt% of the composition, and the nanoparticles are preferably 1 wt% to 20% of the composition.

[0036] Furthermore, the photoinitiator is one or more selected from N-hydroxynaphthalimide trifluoromethanesulfonic acid, 1,4-aminonaphthalenesulfonic acid, 2-amino-5,7-naphthalenedisulfonic acid, tert-butylphenyliodonium perfluorooctanesulfonic acid, triphenylsulfonium perfluorobutanesulfonate, triphenylsulfonium perfluorobutyl, and triphenylsulfonium trifluorosulfonate.

[0037] Furthermore, the organic dispersion solvent is one or more selected from ethyl acetate, butyl acetate, propylene glycol monoethyl ether acetate, propylene glycol methyl ether acetate, 1-methoxy-2-propanol, propylene glycol mono-n-propyl ether, propylene glycol butyl ether, 1-ethoxy-2-propanol, methanol, ethanol, and propanol. The solvent is preferably 1-ethoxy-2-propanol.

[0038] In some embodiments of the present invention, a method for patterning Ag organic coordination nanoparticle photoresists is provided. In the method, the above-mentioned photoresist composition is used, the photoresist composition is dropped onto a substrate by spin coating, heated on a hot stage, further exposed with an electron beam or medium ultraviolet, deep ultraviolet, or extreme ultraviolet light, and developed with a developer.

[0039] Furthermore, the rotation speed of the spin coat is 1000 to 6000 rpm, the heating temperature of the hot stage is controlled to 50 to 110°C, and the heating time is controlled to 30 to 900 s.

[0040] Furthermore, the exposure dose is 50-8000 mJ / cm². 2 That is the case.

[0041] Furthermore, the developer is a mixture of one or more selected from decalin, tetralin, indene, indan, quinoline, 1-methylnaphthalene, toluene, o-xylene, m-xylene, ethyl acetate, butyl acetate, ethanol, n-propanol, isopropanol, n-butanol, n-hexane, and cyclohexane, and the development temperature is room temperature or 20°C to 50°C.

[0042] The thickness of the pre-deposited layer after removal of the organic dispersion solvent may be 10 nm to 100 nm. Specifically, the thickness of the pre-deposited layer may be 10 nm to 20 nm, 20 nm to 30 nm, 30 nm to 40 nm, 40 nm to 50 nm, 50 nm to 60 nm, 60 nm to 70 nm, 70 nm to 80 nm, 80 nm to 90 nm, or 90 nm to 100 nm.

[0043] The base is selected from a silicon plate, and other bases insoluble in the developer may be used as needed.

[0044] Furthermore, the use of these nanoparticles is applied in the field of photoresists, particularly electron beam, medium ultraviolet, deep ultraviolet, extreme ultraviolet, and / or EUV photoresists. For masks, long-wavelength light sources above deep ultraviolet are used as transmission masks, extreme ultraviolet light sources as reflection masks, and electron beams are used for exposure according to software-set patterns.

[0045] Example 1 0.769 g of bis(diphenylphosphin)methane was dissolved in 20 mL of dichloromethane, 0.884 g of silver trifluoroacetate was added, the mixture was stirred for 12 hours, filtered, and the solvent was removed by evaporation to obtain a white solid product. The mixture was recrystallized in dichloromethane, vacuum dried at room temperature, and a sample was taken. 1 ¹H-NMR measurements were performed (Figure 2; δ3.26(CH2), δ7.26,7.40(C6H5)). The crystal structure is shown in Figure 1. The molecular formula is Ag4(dppm)2(CF3COO)4.

[0046] 0.5 g of Ag4(dppm)2(CF3COO)4 and 0.05 g of N-hydroxynaphthalimide triflate were weighed and dissolved in 0.945 g of propylene glycol monomethyl ether acetate. The solution was filtered three times through a 0.22 μm filter head to obtain a photoresist composition. A dynamic light scattering particle size test was performed on this photoresist composition. The average particle size was 1.7 nm (Figure 3). The spin coater rotation speed was set to 2000 rpm and the time to 1 min. A uniform photoresist film was spin-coated onto a silicon wafer, and then the wafer was heated on a hot stage at 80°C for 1 min. The wafer was exposed to a mercury lamp light source with a wavelength of 254 nm (exposure 1260 mJ / cm²). 2 The material was then developed with m-xylene as the developer for 10 seconds to obtain a line pattern with a half-pitch of 10 μm (Figure 4).

[0047] Example 2 0.157 g of bis(diphenylphosphin)methane was dissolved in 16 mL of dichloromethane, 0.136 g of silver acetate was added, and the mixture was stirred to obtain a clear solution. The solution was filtered, concentrated, and cooled to form a white precipitate. The precipitate was separated and recrystallized in dichloromethane / n-hexane, and a crystal sample was taken. 1 ¹H-NMR analysis was performed (Figure 6; nuclear magnetic resonance hydrogen spectra δ2.02(CH3), δ3.31(CH2), δ7.0-7.5(C6H5)). The crystal structure is shown in Figure 5. The molecular formula is Ag4(dppm)2(CH3COO)4. It was vacuum-dried at room temperature.

[0048] 0.5 g of Ag4(dppm)2(CH3COO)4 and 0.05 g of N-hydroxynaphthalimide triflate were weighed and dissolved in 0.945 g of propylene glycol monomethyl ether acetate. The solution was filtered three times through a 0.22 μm filter head. Dynamic light scattering particle size testing revealed that the average particle size was 1.7 nm (Figure 7). The spin coater was set to a rotation speed of 2000 rpm and a time of 1 min to spin coat a uniform photoresist film onto a silicon wafer. The wafer was then heated on an 80°C hot stage for 1 min. The wafer was exposed to a 254 nm wavelength mercury lamp light source (exposure dose 2000 mJ / cm²). 2 ), and developed with o-xylene as the developer for 15s to obtain a line pattern with a half-pitch of 10 μm (Figure 8).

[0049] Example 3 0.104 g of Ag4(dppm)2(CH3COO)4 crystals were dissolved in 30 mL of methanol, and 0.056 g of bis(diphenylphosphinomethane)methane was added. The mixture was stirred to obtain a clear solution. The solution was filtered, concentrated, and cooled to form a precipitate. The precipitate was separated, recrystallized in dichloromethane / n-hexane, and the precipitate was separated again. A crystal sample was taken. 1 ¹H-NMR analysis was performed (Figure 10; nuclear magnetic resonance hydrogen spectra δ2.12(CH3), δ3.36(CH2), δ6.95-7.45(C6H5)). The crystal structure is shown in Figure 9. The molecular formula is Ag2(dppm)2(CH3COO)2. It was vacuum-dried at room temperature.

[0050] 0.5 g of Ag2(dppm)2(OAc)2 and 0.05 g of N-hydroxynaphthalimide triflate were weighed and dissolved in 0.945 g of propylene glycol monomethyl ether acetate. The solution was filtered three times using a 0.22 μm filter head. Dynamic light scattering particle size testing revealed an average particle size of 1.3 nm (Figure 11). A spin coater was set to a rotation speed of 2000 rpm and a time of 1 min to spin coat a uniform photoresist film onto a silicon wafer. The wafer was then heated on a hot stage at 80°C for 1 min. The wafer was exposed to a mercury lamp light source with a wavelength of 254 nm (exposure dose: 270 mJ / cm²). 2 ), developed with m-xylene as the developer for 30 seconds to obtain a line pattern with a half-pitch of 10 μm (Figure 12).

[0051] Based on the above, the present invention provides multiple types of effective nanoparticles and corresponding compositions, and it has been verified that they have good structure and lithography performance under medium ultraviolet and electron beam conditions, enabling the realization of superior photolithography performance such as high resolution, high sensitivity, and low line roughness.

Claims

1. A photoresist composition comprising Ag-based organic coordination nanoparticles, It further contains a photoinitiator and an organic dispersion solvent, The photoinitiator is present in an amount of 0.1 wt% to 10 wt% of the composition, and the Ag-based organic coordination nanoparticles are present in an amount of 1 wt% to 20 wt% of the composition. The general formula of the aforementioned Ag-based organic coordination nanoparticles is [Ag ｍ (Note) ｎ (Q) ｘ ] ｙ A photoresist composition characterized in that (the ranges of m, n, x, and y are all between 1 and 4). (In the formula, R is selected from bis(diphenylphosphino)methane (dppm), bis(dicyclohexylphosphino)methane (abbreviation: dcpm), bis(diphenylamino)methane, N,N-bis(diphenylphosphino)amine (abbreviation: dppa), N,N,N',N'-tetramethyldiaminomethane, N,N,N',N'-tetraethyldiaminomethane, Q is CH ３ COO, C ２ H ５ COO, C ３ H ７ COO, i-C ３ H ７ COO, C ４ H ９ COO, C / / 这里似乎重复了,可能原文有误,按照规则保留 ６ H １３ COO, C ９ H １９ COO, C ６ H ５ COO, CF ３ COO, C ２ F ５ / / 这里似乎重复了,可能原文有误,按照规则保留 COO, C ３ F ７ COO, i-C ３ F ７ COO, C ４ F ９ COO, C ６ F １３ COO, C ９ F １９ is selected from COO.)

2. The photoresist composition according to claim 1, characterized in that the photoinitiator is one or more selected from N-hydroxynaphthalimidetrifluoromethanesulfonic acid, 1,4-aminonaphthalenesulfonic acid, 2-amino-5,7-naphthalenedisulfonic acid, tert-butylphenyliodonium salt of perfluorooctanesulfonic acid, triphenylsulfonium perfluorobutanesulfonate, triphenylsulfonium perfluorobutyl, and triphenylsulfonium trifluorosulfonate.

3. The photoresist composition according to claim 1, characterized in that the organic dispersion solvent is one or more selected from ethyl acetate, butyl acetate, propylene glycol monoethyl ether acetate, propylene glycol methyl ether acetate, 1-methoxy-2-propanol, propylene glycol mono-n-propyl ether, propylene glycol butyl ether, 1-ethoxy-2-propanol, methanol, ethanol, and propanol.

4. The specific structure of the Ag-based organic coordination nanoparticle is: Ag ２ (dppm) ２ (CH ３ COO) ２ 、 Ag ４ (dppm) ２ (CH ３ COO) ４ 、 Ag ４ (dppm) ２ (CF ３ COO) ４ 、 Ag ２ (dppm) ２ (C ２ H ５ COO) ２ 、 Ag ４ (dppm) ２ (C ２ F ５ COO) ４ 、 Ag ４ (dppm) ２ (C ４ F ９ COO) ４ 、 Ag ２ (dcpm) ２ (CH ３ COO) ２ , or Ag ４ (dppa) ２ (CH ３ COO) ４ The photoresist composition according to claim 1, characterized in that it is the same as the one described in claim 1.

5. The photoresist composition according to claim 1, characterized in that the crystal size of the Ag-based organic coordination nanoparticles is 1 nm to 4 nm.

6. A method for patterning Ag-based organic coordination nanoparticle photoresists, Using the photoresist composition described in claim 1, the photoresist composition is dropped onto a substrate by spin coating, heated on a hot stage, further exposed with an electron beam or medium ultraviolet, deep ultraviolet, or extreme ultraviolet light, and developed with a developer, the rotation speed of the spin coating being 1000 to 6000 rpm, the heating temperature of the hot stage being controlled to 50 to 110°C, the heating time being controlled to 30 to 900 s, and the exposure amount being 50 to 8000 mJ / cm². ２ This includes the step, A method for patterning Ag-based organic coordination nanoparticle photoresists, characterized in that the developer is a mixture of one or more selected from decalin, tetralin, indene, indan, quinoline, 1-methylnaphthalene, toluene, o-xylene, m-xylene, ethyl acetate, butyl acetate, ethanol, n-propanol, isopropanol, n-butanol, n-hexane, and cyclohexane, the development temperature is room temperature or 20°C to 50°C, and the thickness of the pre-formed film layer after removal of the organic dispersion solvent can be 10 nm to 100 nm.

7. A method for patterning Ag-based organic coordination nanoparticle photoresists, Using the photoresist composition described in claim 2, the photoresist composition is dropped onto a substrate by spin coating, heated on a hot stage, further exposed with an electron beam or medium ultraviolet, deep ultraviolet, or extreme ultraviolet light, and developed with a developer, the rotation speed of the spin coating being 1000 to 6000 rpm, the heating temperature of the hot stage being controlled to 50 to 110°C, the heating time being controlled to 30 to 900 s, and the exposure amount being 50 to 8000 mJ / cm². ２ This includes the step, A method for patterning Ag-based organic coordination nanoparticle photoresists, characterized in that the developer is a mixture of one or more selected from decalin, tetralin, indene, indan, quinoline, 1-methylnaphthalene, toluene, o-xylene, m-xylene, ethyl acetate, butyl acetate, ethanol, n-propanol, isopropanol, n-butanol, n-hexane, and cyclohexane, the development temperature is room temperature or 20°C to 50°C, and the thickness of the pre-formed film layer after removal of the organic dispersion solvent can be 10 nm to 100 nm.

8. A method for patterning Ag-based organic coordination nanoparticle photoresists, Using the photoresist composition described in claim 3, the photoresist composition is dropped onto a substrate by spin coating, heated on a hot stage, further exposed with an electron beam or medium ultraviolet, deep ultraviolet, or extreme ultraviolet light, and developed with a developer, the rotation speed of the spin coating being 1000 to 6000 rpm, the heating temperature of the hot stage being controlled to 50 to 110°C, the heating time being controlled to 30 to 900 s, and the exposure amount being 50 to 8000 mJ / cm². ２ This includes the step, A method for patterning Ag-based organic coordination nanoparticle photoresists, characterized in that the developer is a mixture of one or more selected from decalin, tetralin, indene, indan, quinoline, 1-methylnaphthalene, toluene, o-xylene, m-xylene, ethyl acetate, butyl acetate, ethanol, n-propanol, isopropanol, n-butanol, n-hexane, and cyclohexane, the development temperature is room temperature or 20°C to 50°C, and the thickness of the pre-formed film layer after removal of the organic dispersion solvent can be 10 nm to 100 nm.

9. Used in electron beam, medium ultraviolet, deep ultraviolet and / or extreme ultraviolet photoresists, The general formula for Ag-based organic coordination nanoparticles is [Ag ｍ (Note) ｎ (Q) ｘ ] ｙ The use of Ag-based organic coordination nanoparticles, characterized in that (the ranges of m, n, x, and y are all between 1 and 4). (In the formula, R is selected from bis(diphenylphosphino)methane (dppm), bis(dicyclohexylphosphino)methane (abbreviation: dcpm), bis(diphenylamino)methane, N,N-bis(diphenylphosphino)amine (abbreviation: dppa), N,N,N',N'-tetramethyldiaminomethane, N,N,N',N'-tetraethyldiaminomethane, Q is CH ３ COO, C ２ H ５ COO, C ３ H ７ COO, i-C ３ H ７ COO, C ４ H ９ COO, C ６ H １３ COO, C ９ H １９ COO, C ６ H ５ COO, CF ３ COO, C ２ F ５ COO, C ３ F ７ COO, i-C ３ F ７ COO, C ４ F ９ COO, C ６ F １３ COO, C ９ F １９ is selected from COO.)

10. The specific structure of the Ag-based organic coordination nanoparticle is: Ag ２ (dppm) ２ (CH ３ COO) ２ 、 Ag ４ (dppm) ２ (CH ３ COO) ４ 、 Ag ４ (dppm) ２ (CF ３ COO) ４ 、 Ag ２ (dppm) ２ (C ２ H ５ COO) ２ 、 Ag ４ (dppm) ２ (C ２ F ５ COO) ４ 、 Ag ４ (dppm) ２ (C ４ F ９ COO) ４ 、 Ag ２ (dcpm) ２ (CH ３ COO) ２ , or Ag ４ (dppa) ２ (CH ３ COO) ４ The use of Ag-based organic coordination nanoparticles according to claim 9, characterized in that...

11. The use of the Ag-based organic coordination nanoparticles according to claim 9, characterized in that the crystal size of the Ag-based organic coordination nanoparticles is 1 nm to 4 nm.

Images