Dielectric layer for digital microfluidic devices
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- ヌークレラ リミテッド
- Filing Date
- 2021-11-04
- Publication Date
- 2026-05-21
AI Technical Summary
Conventional digital microfluidic devices face challenges in protecting dielectric layers from electrochemical degradation due to high voltages and corrosive reagents, which is exacerbated in active matrix electrowetting systems, leading to device degradation and operational limitations.
A multilayer dielectric stack with alternating layers of low and high dielectric constants, fabricated using atomic layer deposition, is employed to enhance protection against electrochemical degradation while maintaining operational efficiency.
The multilayer dielectric stack effectively prevents electrochemical degradation, enabling stable operation at higher voltages and reducing manufacturing costs, thus extending the lifespan and performance of digital microfluidic devices.
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