Substrate processing method and substrate processing apparatus

Abstract

To provide a technology that can appropriately remove difficult-to-remove residues or residual films on the peripheral edge of a substrate by SPM processing.SOLUTION: A substrate processing method includes a first step of forming a protective film including an SOG film on the main surface of a substrate, forming a protective film such that the peripheral edge of the main surface is not covered with the protective film, and the area inside the peripheral edge of the main surface is covered with the protective film, a second step of removing the residue or remaining film on the peripheral edge using a treatment solution containing a mixed solution of sulfuric acid and hydrogen peroxide after the protective film forming step, and a third step of removing the protective film after the residual film removal step.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus.

Background Art

[0002] Semiconductor devices are manufactured by forming various patterns on one main surface of a substrate. The various patterns are formed in the central region of one main surface of the substrate and not formed in the peripheral region thereof.

[0003] Residues of various substances may adhere to the peripheral portion of this substrate during pattern formation, or unnecessary films remaining from the previous process may remain. In order to remove such residuses and remaining films, bevel processing for cleaning the peripheral portion of the substrate may be performed. As a substrate processing apparatus for performing such bevel processing, for example, the substrate processing apparatus described in Patent Document 1 may be adopted. In Patent Document 1, the substrate processing apparatus includes a substrate holding unit and a nozzle. The substrate holding unit holds the substrate in a horizontal posture and rotates the substrate around a vertical rotation axis passing through the center of the substrate. The nozzle discharges a processing liquid toward the peripheral portion of the rotating substrate and supplies the processing liquid to the peripheral portion of the substrate. By the processing liquid acting on the peripheral portion of the substrate, the peripheral portion of the substrate can be cleaned.

[0004] Remaining films remaining on the peripheral portion of the substrate are firmly bonded to the substrate and some cannot be easily removed with ordinary cleaning liquids or etching liquids. Examples of such remaining films that are difficult to remove include resist remaining films having a cured layer, and remaining films such as amorphous carbon and NiPt alloy formed on the substrate in a film forming process or the like. As a means for removing such remaining films that are difficult to remove, there is an etching process using SPM (a mixed solution of sulfuric acid and hydrogen peroxide solution).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

[0006] Due to their high viscosity, sulfuric acid and SPM (Surface-Polished Microwave Oxide) make it difficult to etch only the periphery of the substrate. Furthermore, the vapor produced by mixing sulfuric acid and hydrogen peroxide can spread beyond the substrate's periphery, potentially contaminating patterns formed in the center of the substrate.

[0007] Therefore, the present disclosure aims to provide a technology that can appropriately remove difficult-to-remove residues or residual films on the peripheral edges of a substrate by SPM treatment. [Means for solving the problem]

[0008] A first embodiment is a substrate processing method, comprising the steps of forming a protective film including an SOG film on the main surface of a substrate, the first step of forming the protective film such that the peripheral edge of the main surface is not covered by the protective film, and the region of the main surface inside the peripheral edge is covered by the protective film; the second step of removing residue or residual film on the peripheral edge with a processing solution containing a mixture of sulfuric acid and hydrogen peroxide after the first step; and the third step of removing the protective film after the second step.

[0009] A second embodiment is a substrate processing method according to the first embodiment, wherein the residue or residual film includes at least one of a resist containing a hardened layer, amorphous carbon, and NiPt alloy.

[0010] A third embodiment is a substrate processing method according to the first or second embodiment, wherein in the third step, the protective film is removed with a chemical solution containing hydrofluoric acid.

[0011] A fourth embodiment is a substrate processing method according to any one of the first to third embodiments, wherein the first step includes a protective bevel step in which a chemical solution containing hydrofluoric acid is discharged from a first nozzle toward the substrate, the peripheral portion of the SOG film formed on the entire surface of the main surface of the substrate is removed with the chemical solution, and the protective film is formed in the inner region of the main surface, and in the second step, the processing liquid is discharged toward the substrate from a second nozzle having a larger discharge port than the discharge port of the first nozzle, and the residue or residual film is removed with the processing liquid.

[0012] A fifth aspect is a substrate processing method according to the fourth aspect, wherein in the first step, the chemical solution is discharged from a first nozzle located perpendicular to the main surface of the substrate along a discharge direction that is obliquely outward to remove the peripheral portion of the SOG film, and in the second step, the second nozzle discharges the processing solution toward the protective film, and the processing solution that has adhered to the protective film is flowed from the protective film toward the peripheral portion of the substrate by the rotation of the substrate.

[0013] A sixth aspect is a substrate processing method according to the fourth or fifth aspect, wherein the first step is performed before the protective bevel step and further comprises a protective film forming step of applying a coating liquid to the main surface of the substrate and drying the coating liquid to form the protective film.

[0014] A seventh embodiment is a substrate processing apparatus comprising: a substrate holding unit that rotates a substrate while holding the substrate in a horizontal position, wherein the peripheral edge of the main surface is not covered with a protective film including an SOG film, and the region of the main surface inside the peripheral edge is covered with the protective film; and a nozzle that discharges a processing liquid containing a mixture of sulfuric acid and hydrogen peroxide to remove residue or residual film on the peripheral edge of the main surface of the substrate with the processing liquid. [Effects of the Invention]

[0015] According to the first and seventh aspects, while covering the inner region of the main surface of the substrate with a SOG film, residues or remaining films on the peripheral portion of the substrate are removed by SPM. Since the SOG film is hardly removed by SPM, the residues or remaining films can be appropriately removed while appropriately protecting the inner region of the substrate.

[0016] According to the second aspect, residues or remaining films that are difficult to remove can be removed.

[0017] According to the third aspect, the protective film can be removed while suppressing damage to the peripheral portion of the substrate.

[0018] According to the fourth aspect, since the viscosity of the chemical solution is low, the protected peripheral portion can be removed with high positional accuracy. Also, although the viscosity of the SPM is high, the discharge port of the second nozzle is large, so the second nozzle can discharge the SPM more appropriately.

[0019] According to the fifth aspect, in the protective bevel process, the end face of the protective film can be made an inclined surface. Therefore, in the subsequent second process, the processing liquid smoothly flows from the inclined surface of the protective film to the peripheral portion of the substrate. Thus, the processing liquid also easily acts on the boundary between the inclined surface and the peripheral portion of the substrate, and the peripheral portion of the substrate can be processed more appropriately.

[0020] According to the sixth aspect, an inexpensive wet processing unit can be used to form the protective film. [[ID=2l]]

Brief Description of the Drawings

[0021] [Figure 1] It is a plan view schematically showing an example of the configuration of a substrate processing apparatus. [Figure 2] It is a longitudinal sectional view schematically showing an example of the configuration of a substrate processing apparatus. [Figure 3] It is a view schematically showing an example of the configuration of a substrate W. [Figure 4] It is a functional block diagram schematically showing an example of the internal configuration of a control unit. [Figure 5]It is a flowchart showing an example of a substrate processing method executed by a substrate processing apparatus. [Figure 6] It is a diagram schematically showing an example of the state of the substrate W in each step. [Figure 7] It is a diagram schematically showing an example of the configuration of the coating unit. [Figure 8] It is a flowchart showing a specific example of the protective film formation process. [Figure 9] It is a diagram schematically showing an example of the configuration of the bevel unit. [Figure 10] It is a plan view schematically showing an example of the configuration of the bevel unit. [Figure 11] It is a plan view schematically showing an example of the configuration of the heating unit. [Figure 12] It is a flowchart showing a specific example of the protective bevel process. [Figure 13] It is a diagram schematically showing an example of the configuration of the cleaning unit. [Figure 14] It is a flowchart showing a specific example of the substrate bevel process and the protective film removal process.

Mode for Carrying Out the Invention

[0022] Hereinafter, embodiments will be described with reference to the accompanying drawings. The drawings are schematically shown, and for the sake of convenience of explanation, omissions or simplifications of the configuration may be made as appropriate. Also, the size and positional relationship of the configurations shown in the drawings are not necessarily accurately described and can be changed as appropriate.

[0023] Also, in the following description, the same reference numerals are used to illustrate the same components, and their names and functions are also assumed to be the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0024] Furthermore, even if ordinal numbers such as "first" or "second" are used in the following descriptions, these terms are used for convenience to facilitate understanding of the embodiments and are not limited to the order that may result from these ordinal numbers.

[0025] When expressions indicating relative or absolute positional relationships are used (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), unless otherwise specified, such expressions shall not only strictly represent the positional relationship but also represent a state in which there is a relative displacement in terms of angle or distance within a tolerance or a range in which equivalent functionality is obtained. When expressions indicating equality are used (e.g., "identical," "equal," "homogeneous," etc.), unless otherwise specified, such expressions shall not only strictly represent a state in which there is a quantitatively exact equality but also represent a state in which there is a difference within a tolerance or a range in which equivalent functionality is obtained. When expressions indicating shape are used (e.g., "quadrilateral" or "cylindrical"), unless otherwise specified, such expressions shall not only strictly represent the geometrically exact shape but also represent a shape with features such as concavities or chamfers within a range in which equivalent effects are obtained. When expressions such as "possess," "equip," "include," or "have" a single component are used, such expressions are not exclusive expressions that exclude the existence of other components. When the expression "at least one of A, B, and C" is used, it includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0026] <Overview of the substrate processing apparatus 100> Figure 1 is a schematic plan view showing an example of the configuration of the substrate processing apparatus 100, and Figure 2 is a schematic longitudinal cross-sectional view showing an example of the configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one at a time. The substrate W is, for example, a semiconductor substrate, and in this case has a disc shape. The diameter of the substrate W is not particularly limited, but for example, it is about 200 mm to 300 mm.

[0027] Figure 3 is a schematic diagram showing an example of the configuration of a substrate W. In the example in Figure 3, a cross-sectional view and a plan view of the substrate W are shown. Various circuit patterns are formed on one main surface of the substrate W. Hereinafter, one main surface of the substrate W will also be referred to as the device surface Wa. The device surface Wa has a circular shape in plan view. No circuit patterns are formed in the peripheral region Wa1 of the device surface Wa. The peripheral region Wa1 is an annular region with a predetermined width extending from the periphery of the substrate W. The predetermined width is, for example, several millimeters to several tens of millimeters. Circuit patterns are formed in the circular central region Wa2 of the device surface Wa, which is inside the peripheral region Wa1.

[0028] Here, it is assumed that no circuit pattern is formed on the other main surface of the substrate W. In the following, the other main surface will also be referred to as the non-device surface Wb. Furthermore, the portion comprising the peripheral region of the non-device surface Wb, the end face of the substrate W, and the peripheral region Wa1 of the device surface Wa will also be referred to as the substrate peripheral portion VW1 of the substrate W.

[0029] Foreign matter may remain on the surface of the substrate edge VW1 of such a substrate W. This foreign matter is, for example, residue or residual film of various materials generated during various processes for forming a circuit pattern on the device surface Wa. More specifically, this residue or residual film includes at least one of a resist containing a hardened layer, amorphous carbon, and an alloy (e.g., an alloy of nickel and platinum). Such foreign matter can be removed by a mixture of sulfuric acid and hydrogen peroxide (SPM).

[0030] The substrate processing apparatus 100 according to this embodiment can remove foreign matter adhering to the peripheral edge VW1 of the substrate. Below, we will first outline the configuration and operation of the substrate processing apparatus 100, and then describe them in detail.

[0031] In the examples shown in Figures 1 and 2, the substrate processing apparatus 100 includes an indexer unit 110, a main apparatus body 120, and a control unit 90.

[0032] <Indexer section 110> The indexer section 110 is located between the main body of the device 120 and the outside. The indexer section 110 is an interface section for loading and unloading substrates W between the main body of the device 120 and the outside. Here, a substrate carrier (hereinafter referred to as a carrier) C containing multiple substrates W is loaded into the indexer section 110 from the outside.

[0033] The indexer unit 110 includes a plurality of load ports 111 and an indexer robot 112. Each load port 111 holds a carrier C brought in from the outside. The indexer robot 112 is a transport unit that transports substrates W between the carrier C and the main body 120 of the apparatus. The indexer robot 112 sequentially removes unprocessed substrates W from the carrier C and transports the substrates W to the main body 120, and also sequentially receives processed substrates W from the main body 120 that have been processed by the main body 120 and stores the substrates W in the carrier C. The carrier C containing the processed substrates W is then transported out from the load port 111 to the outside.

[0034] <Device body 120> The main body of the apparatus 120 is the part that processes the substrate W, and includes a plurality of dry processing units 10, a plurality of wet processing units 20, and a transport unit 30.

[0035] <Conveyor Unit 30> The transport unit 30 transports the substrate W between the indexer robot 112, the dry processing unit 10, and the wet processing unit 20. In the example shown in Figure 1, the transport unit 30 includes a shuttle transport unit 31 and a center robot 32. The shuttle transport unit 31 transports the substrate W horizontally between a first transfer position and a second transfer position. The shuttle transport unit 31 transfers the substrate W with the indexer robot 112 at the first transfer position and with the center robot 32 at the second transfer position. The center robot 32 is a transport unit that transports the substrate W between the shuttle transport unit 31, the dry processing unit 10, and the wet processing unit 20.

[0036] <Overview of Dry Processing Unit 10> The dry processing unit 10 performs dry processing on the substrate W. As shown in Figure 1, each dry processing unit 10 includes a heat treatment unit 10A, a cooling unit 10B, and an indoor transport unit 10C. The heat treatment unit 10A heats the substrate W. The cooling unit 10B cools the substrate W. The indoor transport unit 10C transports the substrate W between the heat treatment unit 10A and the cooling unit 10B.

[0037] <Overview of the wet processing unit 20> The wet processing unit 20 supplies various processing liquids to the substrate W and performs wet processing on the substrate W according to each processing liquid. The wet processing unit 20 includes a coating unit 20A, a beveling unit 20B, and a cleaning unit 20C.

[0038] The coating unit 20A performs a coating process to form a coating film F2 over the entire device surface Wa of the substrate W (see also Figure 6(a)). Specifically, the coating unit 20A applies the coating liquid to the entire device surface Wa of the substrate W and allows the coating liquid to dry to a certain extent to form the coating film F2.

[0039] In the example shown in Figure 6(a), the coating unit 20A includes a substrate holder 21A and a coating nozzle 22A. The substrate holder 21A holds the substrate W in a horizontal position with the device surface Wa facing vertically upward, and rotates the substrate W around the rotation axis Q1. Here, the horizontal position means that the thickness direction of the substrate W is aligned with the vertical direction. The rotation axis Q1 is an axis that passes through the center of the substrate W and is aligned with the vertical direction. The substrate holder 21A may also be called a spin chuck.

[0040] The coating nozzle 22A is positioned vertically above the substrate W held by the substrate holding unit 21A. The coating nozzle 22A discharges a predetermined amount of coating liquid containing the material for the coating film F2 toward the center of the device surface Wa of the substrate W. The coating liquid is, for example, SOG (Spin on Glass). The substrate holding unit 21A then rotates the substrate W around the rotation axis Q1. This spreads the coating liquid over the entire device surface Wa of the substrate W. As the substrate holding unit 21A rotates the substrate W at high speed, the coating liquid dries to some extent, and the coating film F2 is formed over the entire device surface Wa of the substrate W.

[0041] After the coating process, the substrate W is transported to the dry processing unit 10 by the central robot 32, and subjected to heat treatment by the heat treatment unit 10A of the dry processing unit 10. This dries the coating film F2 on the substrate W and forms a protective film F1 over the entire surface of the device surface Wa. The protective film F1 is, for example, an SOG film (described later). The heat treatment unit 10A may also be called a bake unit. The substrate W is then transported to the cooling unit 10B by the indoor transport unit 10C, and cooled by the cooling unit 10B. This allows the temperature of the substrate W to be rapidly reduced.

[0042] The bevel unit 20B performs a protective beveling process on the substrate W to remove the peripheral edge of the protective film F1 (hereinafter referred to as the protective peripheral edge VF1) (see also Figure 6(b)). More specifically, the bevel unit 20B supplies a first processing solution to the protective peripheral edge VF1. The first processing solution is a chemical solution capable of removing the protective film F1, and is hereinafter also referred to as the film removal solution. The film removal solution is, for example, hydrofluoric acid. This protective beveling process removes the protective peripheral edge VF1 and exposes the peripheral region Wa1 of the underlying layer. In other words, the protective beveling process exposes the peripheral region Wa1 while the central region Wa2 of the device surface Wa of the substrate W remains covered by the protective film F1.

[0043] In the example shown in Figure 6(b), the bevel unit 20B includes a substrate holder 21B and a bevel nozzle 22B (corresponding to the first nozzle). The substrate holder 21B holds the substrate W in a horizontal position while rotating the substrate W around the rotation axis Q1. This substrate holder 21B may also be called a spin chuck.

[0044] The bevel nozzle 22B is positioned vertically above the substrate W held by the substrate holding portion 21B. As shown in Figure 6(b), the bevel nozzle 22B, at a position vertically opposite to the peripheral portion of the substrate W, discharges the film removal liquid toward the protective peripheral portion VF1 of the rotating substrate W. The film removal liquid lands at the contact point P1 on the upper surface of the protective film F1, flows radially outward due to the centrifugal force of the substrate W, and splashes from the periphery of the substrate W. At this time, the film removal liquid acts on the protective peripheral portion VF1, whose inner periphery is a circle passing through the contact point P1, and removes the protective peripheral portion VF1. As a result, the peripheral region Wa1 of the device surface Wa below the protective peripheral portion VF1 is exposed. In other words, the central region Wa2 of the device surface Wa is covered by the protective film F1, while the peripheral region Wa1 of the device surface Wa is exposed.

[0045] The opening area of ​​the discharge port 22b of this bevel nozzle 22B is small. Furthermore, the viscosity of the film removal liquid is low, and the flow rate of the film removal liquid is also set to a low level during the protective beveling process. As a result, the film removal liquid discharged from the bevel nozzle 22B can be deposited on the target deposition position on the protective film F1 with higher precision. In other words, the difference between the deposition position P1 and the target deposition position can be reduced. Therefore, the bevel unit 20B can remove the protective peripheral edge VF1 with higher positional precision.

[0046] The cleaning unit 20C performs a substrate beveling treatment on the substrate W after protective beveling (see also Figure 6(c)). Specifically, the cleaning unit 20C supplies a second treatment solution to the substrate edge VW1 of the substrate W. The second treatment solution is a chemical solution that can treat the substrate edge VW1 without removing much of the protective film F1. Here, the second treatment solution removes foreign matter M1 from the substrate edge VW1. Therefore, the second treatment solution will also be referred to as the foreign matter removal solution below. The foreign matter removal solution is, for example, a mixture of sulfuric acid and hydrogen peroxide (SPM). This substrate beveling treatment can also be called a cleaning treatment because it substantially cleans the substrate edge VW1.

[0047] The cleaning unit 20C also performs a protective film removal process on the substrate W after the substrate beveling process to remove the protective film F1 (see also Figure 6(d)). Specifically, the cleaning unit 20C supplies a film removal solution to the protective film F1 on the substrate W. This allows the protective film F1 to be removed.

[0048] In the examples shown in Figures 6(c) and 6(d), the cleaning unit 20C includes a substrate holder 21C and a cleaning nozzle 22C (corresponding to the second nozzle). The substrate holder 21C holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1. This substrate holder 21C may also be called a spin chuck.

[0049] The cleaning nozzle 22C is positioned vertically above the substrate W held by the substrate holding section 21C. The cleaning nozzle 22C has a larger discharge port 22c than the discharge port 22b of the bevel nozzle 22B, and can selectively discharge various processing liquids, including foreign matter removal liquid and film removal liquid. For example, the cleaning nozzle 22C discharges foreign matter removal liquid toward the protective film F1 of the rotating substrate W at a position vertically opposite the center of the substrate W. The foreign matter removal liquid that lands on the upper surface of the protective film F1 of the substrate W is affected by the centrifugal force accompanying the rotation of the substrate W and flows radially outward along the upper surface of the protective film F1, and then flows along the substrate periphery VW1 of the substrate W. This makes it possible to remove foreign matter M1 from the substrate periphery VW1.

[0050] Furthermore, after the substrate beveling process, the cleaning nozzle 22C discharges a film removal solution toward the protective film F1 on the rotating substrate W. The film removal solution that lands on the upper surface of the protective film F1 on the substrate W is subjected to centrifugal force due to the rotation of the substrate W and flows radially outward across the upper surface of the protective film F1. This allows the protective film F1 to be removed.

[0051] <Control Unit 90> The control unit 90 comprehensively controls the substrate processing apparatus 100. Specifically, the control unit 90 controls the indexer robot 112, the dry processing unit 10, the wet processing unit 20, and the transport unit 30.

[0052] Figure 4 is a functional block diagram schematically showing an example of the internal configuration of the control unit 90. The control unit 90 is an electronic circuit and includes, for example, a data processing unit 91 and a storage unit 92. In the specific example in Figure 3, the data processing unit 91 and the storage unit 92 are interconnected via a bus 93. The data processing unit 91 may be, for example, an arithmetic processing unit such as a CPU (Central Processor Unit). The storage unit 92 may include a non-temporary storage unit (e.g., ROM (Read Only Memory) or hard disk) 921 and a temporary storage unit (e.g., RAM (Random Access Memory)) 922. The non-temporary storage unit 921 may store, for example, a program that defines the processing to be executed by the control unit 90. By executing this program, the data processing unit 91 enables the control unit 90 to execute the processing defined in the program. Of course, some or all of the processing performed by the control unit 90 may be performed by hardware such as dedicated logic circuits.

[0053] <Overview of the operation of the substrate processing device 100> Figure 5 is a flowchart illustrating an example of a substrate processing method performed by the substrate processing apparatus 100. Figure 6 is a schematic diagram showing an example of the state of the substrate W at each stage of the process. Below, we will explain the general operation of the substrate processing apparatus 100, and then describe the specific configuration and specific operation examples of each processing unit.

[0054] First, the substrate processing apparatus 100 performs a protective film formation process to form a protective film F1 over the entire surface of the device surface Wa of the substrate W (Step S1: Protective film formation process). Figure 6(a) shows the state of the substrate W when the protective film F1 is formed. The protective film F1 is a film that protects the central region Wa2 of the device surface Wa of the substrate W from the foreign matter removal solution. The protective film F1 is, for example, an SOG (Spin on Glass) film. The SOG film is a glassy film containing siloxane, and for example, contains siloxane and organic groups. The SOG film may be, for example, silica glass, alkylsiloxane polymer, alkylsilsesquioxane polymer, hydrogenated silsesquioxane polymer, or hydrogenated alkylsilsesquioxane polymer.

[0055] The substrate processing apparatus 100 sequentially performs a coating process by the coating unit 20A and a heat treatment by the dry treatment unit 10 on the substrate W to form a protective film. Specifically, first, the coating nozzle 22A discharges a predetermined amount of coating liquid (e.g., SOG) containing the material for the coating film F2 toward the upper surface of the device surface Wa of the substrate W, and the substrate holding unit 21A rotates the substrate W around the rotation axis Q1. This spreads the coating liquid over the entire surface of the device surface Wa of the substrate W. Then, by rotating the substrate W at a higher speed, the coating liquid dries to some extent, and the coating film F2 is formed over the entire surface of the device surface Wa of the substrate W.

[0056] The central robot 32 unloads the coated substrate W from the coating unit 20A and transfers it to the heat treatment unit 10A of the dry treatment unit 10. The heat treatment unit 10A heats the substrate W and dries the coating film F2 on the device surface Wa, thereby forming a protective film F1. After heating, the substrate W is transported to the cooling unit 10B by the indoor transport unit 10C and cooled by the cooling unit 10B. After cooling, the substrate W is passed to the central robot 32 via the heat treatment unit 10A. The central robot 32 transports the substrate W with the protective film F1 formed on it to the bevel unit 20B.

[0057] The bevel unit 20B performs a protective bevel treatment on the substrate W (Step S2: Protective Bevel Process). Figure 6(b) shows the state of the substrate W when the protective periphery VF1 is removed. The bevel nozzle 22B discharges the film removal liquid toward the protective periphery VF1 of the rotating substrate W. The film removal liquid lands at the contact position P1 on the upper surface of the protective film F1, flows radially outward across the upper surface of the protective film F1, and splashes from the periphery of the substrate W. At this time, the film removal liquid acts on the protective periphery VF1 and removes it.

[0058] The opening area of ​​the discharge port 22b of this bevel nozzle 22B is small. Furthermore, the viscosity of the film removal liquid is low, and the flow rate of the film removal liquid is also set to a low level during the protective bevel treatment. As a result, the film removal liquid discharged from the bevel nozzle 22B can be deposited on the target deposition position on the protective film F1 with higher precision.

[0059] Here, we will explain the case where the liquid application position P1 deviates significantly from the target liquid application position. If the liquid application position P1 deviates from the target liquid application position toward the rotation axis Q1 (i.e., radially inward), the protective film F1 is removed further inward. As a result, the outer peripheral region of the central region Wa2 of the substrate W is exposed. Therefore, the protective film F1 can no longer protect the outer peripheral region of the central region Wa2. Also, if the liquid application position P1 deviates radially outward from the target liquid application position, the width of the protective film F1 that is removed becomes narrower, and as a result, the inner peripheral region of the peripheral region Wa1 of the device surface Wa is not exposed. As a result, the foreign matter M1 to be removed that is attached to the inner peripheral region of the peripheral region Wa1 of the substrate W is covered by the protective film F1.

[0060] In contrast, in this embodiment, the film removal solution can be applied to the application position P1 with higher positional accuracy, so that the central region Wa2 of the device surface Wa is properly protected by the protective film F1 while the peripheral region Wa1 is properly exposed. In other words, foreign matter M1 adhering to the peripheral region Wa1 can be properly exposed. The required positional accuracy for the application position P1 of the film removal solution is, for example, several hundred μm or less. For this reason, it is desirable to make the opening area of ​​the discharge port 22b of the bevel nozzle 22B smaller so that the low viscosity film removal solution can be applied precisely to the target application position.

[0061] Since an SOG film is used as the protective film F1, it is preferable to use an acidic chemical solution containing fluorine (F) as the film removal solution. For example, a chemical solution containing hydrofluoric acid (HF), or more specifically, hydrofluoric acid itself, can be used as the film removal solution. Because hydrofluoric acid has low viscosity, it is suitable for discharge from the bevel nozzle 22B.

[0062] When this hydrofluoric acid acts on the SOG film, the SOG film is removed by the following chemical reaction.

[0063] ···Si-O-Si···+H + →···Si-OH··· (1) ...Si-OH+HF→...SiF4+2HF→H2SiF6(aq) (2) In other words, the siloxane (Si2O) contained in the SOG film reacts with the hydrogen (H) ions contained in hydrofluoric acid to change into silanol (SiOH), and this silanol then reacts with hydrofluoric acid (HF) to change into liquid hexafluorosilicic acid (H2SiF6). Through this chemical reaction, the SOG film is removed by hydrofluoric acid.

[0064] After removing the protective peripheral portion VF1, the bevel unit 20B performs a rinsing process to wash away the film removal liquid from the substrate W with a rinsing solution, and then a drying process to dry the substrate W, in that order. These processes will be described in detail later.

[0065] Next, the central robot 32 unloads the processed substrate W from the bevel unit 20B and loads the substrate W into the washing unit 20C.

[0066] The cleaning unit 20C performs a substrate beveling process on the substrate W (Step S3: Substrate Beveling Process). Figure 6(c) shows the state of the substrate W when foreign matter M1 on the substrate periphery VW1 is removed. The substrate holding unit 21C rotates the substrate W while holding it in a horizontal position, where the periphery of the main surface is not covered with the protective film F1, and the inner region of the main surface is covered with the protective film F1. The cleaning nozzle 22C discharges foreign matter removal liquid (SPM) toward the substrate W to remove residue or residual film on the substrate periphery VW1 with the foreign matter removal liquid. Specifically, the cleaning nozzle 22C discharges the foreign matter removal liquid toward the upper surface of the protective film F1 on the rotating substrate W, and the foreign matter removal liquid that has adhered to the protective film F1 flows from the protective film F1 toward the substrate periphery VW1 due to the rotation of the substrate W. In this way, foreign matter M1 adhering to the substrate periphery VW1 is removed while maintaining the protective film F1. The foreign matter removal solution is, for example, a fluorine-free acidic chemical solution. The foreign matter removal solution can be, for example, a fluorine-free chemical solution containing sulfuric acid, and more specifically, a high-temperature SPM (a mixture of sulfuric acid and hydrogen peroxide). The temperature of the SPM is, for example, several hundred degrees Celsius.

[0067] If the foreign matter removal solution is an acidic solution that does not contain fluorine, the chemical reaction shown in equation (1) will occur with respect to the SOG film, but the chemical reaction shown in equation (2) will not occur, and therefore the SOG film will not be removed. In other words, the protective film F1 will not be removed. On the other hand, foreign matter M1 can be removed by an acidic solution. Specifically, foreign matter M1 such as residual resist film, amorphous carbon, and alloys (nickel and platinum alloys) can be removed by high-temperature SPM.

[0068] Furthermore, in this case, the opening area of ​​the discharge port 22c of the cleaning nozzle 22C is larger than the opening area of ​​the discharge port 22b of the bevel nozzle 22B. Therefore, even highly viscous sulfuric acid-containing chemicals (SPM) can be easily discharged from the discharge port 22c of the cleaning nozzle 22C. In the above example, the cleaning nozzle 22C discharges the film removal solution toward the application position (specifically the central part) within a region radially inward from the peripheral edge VW1 of the substrate W. For this reason, the cleaning nozzle 22C can also be called a central nozzle, in contrast to the bevel nozzle 22B.

[0069] After removing the foreign matter M1, the cleaning unit 20C performs a rinsing process to wash away the foreign matter removal liquid from the substrate W with a rinsing solution. The rinsing process will be described in detail later.

[0070] Next, the cleaning unit 20C performs a protective film removal process on the substrate W (Step S4: Protective Film Removal Process). Figure 6(d) shows the state of the substrate W when the protective film F1 is removed. The cleaning nozzle 22C discharges a film removal solution (e.g., hydrofluoric acid) toward the center of the rotating substrate W. The film removal solution lands on the center of the upper surface of the protective film F1 and spreads radially outward due to the centrifugal force accompanying the rotation of the substrate W. As a result, the film removal solution acts on the entire surface of the protective film F1 on the substrate W and removes the protective film F1.

[0071] After removing the protective film F1, the cleaning unit 20C performs a rinsing process to wash away the film removal solution from the substrate W with a rinsing solution, followed by a drying process to dry the substrate W. These processes will be described in detail later.

[0072] As described above, according to this substrate processing method, in the protective beveling process (step S2), a low-viscosity film removal liquid (e.g., hydrofluoric acid) is discharged from the narrow discharge port 22b of the bevel nozzle 22B to remove the protective peripheral edge VF1 of the protective film F1 with high positional accuracy. Therefore, the substrate peripheral edge VW1 can be exposed with higher positional accuracy. Conversely, the protective film F1 can protect the central region Wa2 of the substrate W with higher positional accuracy.

[0073] Then, in the subsequent substrate beveling process (step S3), while protecting the central region Wa2 of the substrate W with a protective film F1, a foreign matter removal liquid (SPM) is supplied to the exposed substrate peripheral edge VW1 from the discharge port 22c of the cleaning nozzle 22C (step S4). In the substrate beveling process, since the protective film F1 protects the central region Wa2 with high positional accuracy, even if the contact position of the foreign matter removal liquid varies somewhat, the foreign matter removal liquid cannot act on the central region Wa2. Furthermore, even if the contact position of the foreign matter removal liquid varies somewhat, as long as the foreign matter removal liquid flows from the upper surface of the protective film F1 to the substrate peripheral edge VW1, the foreign matter M1 on the substrate peripheral edge VW1 can be properly removed.

[0074] Therefore, even if the foreign matter removal solution has high viscosity, foreign matter M1 on the peripheral edge VW1 of the substrate can be removed with high positional accuracy. In addition, since the opening area of ​​the discharge port 22c of the cleaning nozzle 22C is larger than the opening area of ​​the discharge port 22b of the bevel nozzle 22B, the highly viscous foreign matter removal solution can be discharged at a lower pressure, making it easier to supply the foreign matter removal solution to the substrate W.

[0075] As described above, in this embodiment, during the substrate beveling process (step S3), the inner region of the device surface Wa of the substrate W is covered with a protective film F1 (SOG film), while difficult-to-remove foreign matter M1, such as a resist residue film including a hardened layer, amorphous carbon, or NiPt alloy, on the substrate peripheral VW1 can be removed by SPM. Since this SOG film is hardly removed by SPM, the inner region of the device surface Wa can be appropriately protected from SPM while the foreign matter M1 can be appropriately removed.

[0076] Furthermore, in the example described above, the protective film removal process (step S4) uses a chemical solution containing hydrofluoric acid to remove the SOG film F1. Hydrofluoric acid does not cause much damage to the substrate W, making it suitable for removing the protective film F1. In other words, it is possible to remove the protective film F1 appropriately while suppressing damage to the substrate periphery VW1.

[0077] Furthermore, in the specific example described above, the protective film F1 is formed by a wet treatment in the protective film formation process (step S1). Therefore, the protective film F1 can be formed using an inexpensive coating unit 20A and a heat treatment unit 10A.

[0078] Furthermore, in the example described above, the protective film F1 is removed by wet treatment during the protective film removal process (step S4). Therefore, the protective film F1 can be removed using an inexpensive cleaning unit 20C.

[0079] <Discharge direction of bevel nozzle 22B> In the example shown in Figure 6(b), the bevel nozzle 22B discharges the film removal liquid along an oblique outward discharge direction. The discharge direction is determined, for example, by the shape of the internal flow path FP of the bevel nozzle 22B. In the example shown in Figure 6(b), the internal flow path FP of the bevel nozzle 22B has a vertical flow path FP1 and an inclined flow path FP2. The vertical flow path FP1 is upstream of the inclined flow path FP2 and extends along the vertical direction. The upstream end of the inclined flow path FP2 is connected to the downstream end of the vertical flow path FP1 and is inclined so as it moves vertically downward, it moves away from the axis of rotation Q1. In other words, the inclined flow path FP2 extends along an oblique outward direction. The discharge port 22b is the downstream end of the inclined flow path FP2. Therefore, the film removal liquid that has flowed through the internal flow path FP of the bevel nozzle 22B flows out from the discharge port 22b along an oblique outward direction.

[0080] Since the film removal solution is discharged along an oblique outward direction, the point of application P1 on the protective film F1 during the protective beveling process (step S2) becomes radially outward as the protective peripheral edge VF1 of the protective film F1 is removed. In other words, as the protective peripheral edge VF1 becomes thinner, the film removal solution applies to the protective peripheral edge VF1 at a point of application P1 that is further radially outward. As a result, the end face FS1 of the protective film F1 slopes radially outward as it moves from its top surface to its bottom surface.

[0081] In this case, during the subsequent substrate beveling process (step S3), the cleaning unit 20C should discharge the foreign matter removal liquid from the cleaning nozzle 22C so that the foreign matter removal liquid lands on the upper surface of the protective film F1 (see Figure 6(c)). This allows the foreign matter removal liquid to flow from the upper surface of the protective film F1 through the end face FS1 (inclined surface) to the peripheral region Wa1 of the device surface Wa of the substrate W. Therefore, the foreign matter removal liquid can flow smoothly from the end face FS1 to the peripheral region Wa1 and act appropriately at the boundary between the end face FS1 and the peripheral region Wa1. Consequently, the foreign matter removal liquid can effectively remove foreign matter M1 even at this boundary.

[0082] <Backside bevel> Incidentally, during the protective film formation process (step S1), there is a possibility that a substance with the same components as the protective film F1 may adhere to the peripheral region of the non-device surface Wb of the substrate W. For example, if the coating liquid flows from the device surface Wa of the substrate W, through the edge, to the non-device surface Wb, and a portion of it dries, a substance with the same components as the protective film F1 may adhere to the non-device surface Wb.

[0083] Therefore, as shown in Figure 6(b), the bevel unit 20B may include a bevel nozzle 26B for the back surface. The bevel nozzle 26B is positioned vertically below the substrate W held by the substrate holding portion 21B and faces the non-device surface Wb of the substrate W in the vertical direction. The bevel nozzle 26B discharges the film removal liquid toward the peripheral region of the non-device surface Wb of the substrate W.

[0084] In this case, during the protective beveling process (step S2), film removal liquid is discharged from both bevel nozzles 22B and 26B toward the rotating substrate W. The film removal liquid discharged from bevel nozzle 22B lands on the upper surface of the protective film F1 on the substrate W. This film removal liquid is affected by the centrifugal force accompanying the rotation of the substrate W and flows radially outward, scattering outward from the end face of the substrate W. This film removal liquid from bevel nozzle 22B can remove the protective peripheral edge VF1 of the protective film F1.

[0085] On the other hand, the processing liquid discharged from the bevel nozzle 26B lands on the non-device surface Wb of the substrate W. This film removal liquid is affected by the centrifugal force accompanying the rotation of the substrate W and flows radially outward along the non-device surface Wb, scattering outward from the end face of the substrate W. This film removal liquid from the bevel nozzle 26B can remove the same substance as the protective film F1 adhering to the non-device surface Wb.

[0086] <Specific example of substrate processing apparatus 100> The following sections provide a detailed description of an example of the specific configuration and operation of each processing unit of the substrate processing apparatus 100.

[0087] <Coating Unit 20A> Figure 7 is a schematic diagram showing an example of the configuration of the coating unit 20A. The coating unit 20A includes a substrate holder 21A, a coating nozzle 22A, and a guard 23A.

[0088] The substrate holder 21A holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1. In the example shown in Figure 7, the substrate holder 21A includes a disc-shaped stage 211A and a rotation mechanism 212A.

[0089] Stage 211A is positioned so that its thickness direction is aligned with the vertical direction. A substrate W is placed on the upper surface of stage 211A. Since the diameter of stage 211A is smaller than the diameter of substrate W, stage 211A faces only the central portion of substrate W in the vertical direction. Multiple suction ports (not shown) are formed on the upper surface of stage 211A. A suction channel (not shown) is formed inside stage 211A, communicating with the suction ports, and the upstream end of the suction channel is connected to a suction mechanism (not shown). The suction mechanism includes, for example, a pump, which sucks gas from the suction channel. As a result, the non-device side Wb of substrate W is attracted to the multiple suction ports of stage 211A, and substrate W is adsorbed and held by stage 211A.

[0090] The rotating mechanism 212A rotates the stage 211A around the rotation axis Q1. In the example shown in Figure 7, the rotating mechanism 212A includes a shaft 213A and a motor 214A. The upper end of the shaft 213A is connected to the lower surface of the stage 211A and extends along the rotation axis Q1. The shaft 213A is, for example, a hollow shaft, and part of the suction channel is provided inside the shaft 213A. The motor 214A rotates the shaft 213A around the rotation axis Q1. As a result, the stage 211A connected to the shaft 213A, and the substrate W held by the stage 211A by suction, rotate together around the rotation axis Q1.

[0091] <Dispensing nozzle 22A> The coating nozzle 22A is positioned vertically above the substrate W held by the substrate holding section 21A. The coating nozzle 22A is connected to the downstream end of the supply pipe 221A, and the upstream end of the supply pipe 221A is connected to the coating liquid supply source 223A. Therefore, the coating liquid from the coating liquid supply source 223A is supplied to the coating nozzle 22A through the supply pipe 221A and discharged from the discharge port 22a of the coating nozzle 22A. A valve 222A is provided in the supply pipe 221A. By opening and closing the valve 222A, the discharge and stopping of the coating liquid from the coating nozzle 22A can be switched.

[0092] In the example shown in Figure 7, the coating nozzle 22A is provided to move between a coating position and a coating standby position by a nozzle movement mechanism 25A. The coating position is the position when the coating nozzle 22A discharges the coating liquid toward the substrate W, for example, a position perpendicular to the center of the substrate W. In the example shown in Figure 7, the coating nozzle 22A is shown stopped at the coating position. The coating standby position is the position when the coating nozzle 22A does not discharge the coating liquid toward the substrate W, for example, a position radially outside the edge face of the substrate W. When the coating nozzle 22A is stopped at the coating standby position, physical collision between the coating nozzle 22A and the center robot 32 can be avoided when loading or unloading the substrate W. The nozzle movement mechanism 25A has an arm rotation mechanism similar to the nozzle movement mechanism 222B described later, which is included in the bevel unit 20B.

[0093] The guard 23A is a component that catches the coating liquid scattered from the end face of the substrate W held by the substrate holding portion 21A. The guard 23A has a shape that surrounds the substrate holding portion 21A. In the example shown in Figure 7, the guard 23A has a donut shape that opens radially inward, and the coating liquid scattered from the end face of the substrate W flows into the inner space of the guard 23A. A liquid recovery mechanism and an exhaust mechanism (not shown) are provided at the bottom of the guard 23A. The liquid recovery mechanism recovers the coating liquid inside the guard 23A.

[0094] The guard 23A is provided so as to be able to move up and down between a guard processing position and a guard standby position by a guard lifting mechanism 26A. The guard processing position is the position where the upper edge of the guard 23A is vertically above the upper surface of the substrate W held by the substrate holding part 21A. When the guard 23A is in the guard processing position, it can catch the coating liquid scattered from the substrate W. The guard standby position is the position where the upper edge of the guard 23A is vertically below the stage 211A. When the guard 23A is stopped in the guard standby position, physical collision between the guard 23A and the center robot 32 can be avoided when loading or unloading the substrate W. The guard lifting mechanism 26A includes, for example, a motor as a drive source and a ball screw mechanism as a drive mechanism that converts the rotation of the motor into vertical movement. Alternatively, the guard lifting mechanism 26A may include an air cylinder.

[0095] <Heat treatment unit 10A> Referring to Figure 1, the heat treatment unit 10A includes a hot plate 11A, which is an example of a heating section, and three or more lift pins 12A. The hot plate 11A includes a plate-shaped plate made of metal or the like, and a heating element such as an electric heating wire embedded in the plate-shaped plate. The lift pins 12A penetrate the hot plate 11A vertically and are provided to be able to move up and down between an up-lift position and a down-lift position. The up-lift position is the position where the tip of the lift pin 12A is vertically above the upper surface of the hot plate 11A (i.e., the upper surface of the plate-shaped plate). The down-lift position is the position where the tip of the lift pin 12A is vertically below the upper surface of the hot plate 11A. The pin lifting mechanism (not shown) for raising and lowering the lift pins 12A may include, for example, a motor and a ball screw mechanism, or it may include an air cylinder.

[0096] With multiple lift pins 12A positioned in the lift-up position, the substrate W is placed on the tips of the lift pins 12A from the center robot 32. Here, the substrate W is placed on the tips of the multiple lift pins 12A with its device surface Wa facing vertically upward. As the multiple lift pins 12A descend to the lift-down position, the substrate W is placed on the hot plate 11A. The hot plate 11A heats the substrate W. As a result, the coating film F2 on the device surface Wa of the substrate W dries and a protective film F1 is formed on the device surface Wa.

[0097] <Cooling Unit 10B> The cooling unit 10B includes a cooling plate 11B, which is an example of a cooling section, and three or more lift pins 12B. The cooling plate 11B includes a plate-shaped plate made of metal or the like, and a cooling source such as a Peltier element built into the plate-shaped plate. The lift pins 12B penetrate the cooling plate 11B vertically and are provided to be able to move up and down between an up-lift position and a down-lift position. The up-lift position is the position where the tip of the lift pin 12B is vertically above the upper surface of the cooling plate 11B. The down-lift position is the position where the tip of the lift pin 12B is vertically below the upper surface of the cooling plate 11B. The pin lifting mechanism for raising and lowering the lift pin 12B is the same as the pin lifting mechanism for raising and lowering the lift pin 12A.

[0098] With multiple lift pins 12B positioned in the lift-up position, the substrate W is placed on the tips of the lift pins 12B from the center robot 32. As the multiple lift pins 12B descend to the lift-down position, the substrate W is placed on the cooling plate 11B. The cooling plate 11B cools the substrate W. This allows the temperature of the substrate W to be rapidly reduced.

[0099] <Protective film formation treatment> Next, a specific example of the protective film formation process by the coating unit 20A and the dry processing unit 10 will be described. Figure 8 is a flowchart showing a specific example of the protective film formation process. First, the central robot 32 loads the substrate W into the coating unit 20A (step S11). The substrate holding unit 21A holds the loaded substrate W.

[0100] Next, the coating unit 20A supplies coating liquid to the device surface Wa of the substrate W to form a coating film F2 (step S12). Specifically, first, the nozzle moving mechanism 25A moves the coating nozzle 22A to the coating position, and the guard lifting mechanism 26A raises the guard 23A to the guard processing position. Next, the coating unit 20A (specifically the control unit 90) opens the valve 222A to discharge a predetermined amount of coating liquid from the coating nozzle 22A onto the device surface Wa of the substrate W. The coating liquid is, for example, SOG. When supplying the coating liquid, the substrate holding unit 21A may rotate the substrate W, or it may keep the substrate W stationary. Next, the substrate holding unit 21A rotates the substrate W to spread the coating liquid over the entire surface of the device surface Wa of the substrate W.

[0101] Next, the substrate holder 21A continues to rotate the substrate W to dry the coating liquid on the substrate W and form a coating film F2 (step S13). Once the coating film F2 is formed, the substrate holder 21A stops rotating the substrate W and releases the substrate W. The nozzle moving mechanism 25 moves the coating nozzle 22A to the coating standby position, and the guard lifting mechanism 26A lowers the guard 23A to the guard standby position.

[0102] Next, the center robot 32 unloads the substrate W from the coating unit 20A and loads it into the dry processing unit 10 (step S14). Specifically, the lift pin 12A of the heat processing unit 10A receives the substrate W from the center robot 32 while raised to the lift-up position and lowers to the lift-down position. As a result, the substrate W is placed on the hot plate 11A.

[0103] Next, the hot plate 11A heats the substrate W (step S15). This heats the coating F2 on the substrate W, forming a protective film F1. The protective film F1 is, for example, an SOG film.

[0104] Next, the indoor transport unit 10C transports the substrate W from the heat treatment unit 10A to the cooling unit 10B. Specifically, first, the lift pin 12A rises to lift the substrate W, and the indoor transport unit 10C takes out the substrate W. The indoor transport unit 10C places the substrate W on the tip of the lift pin 12B of the cooling unit 10B, which is located in the lifted position. The lift pin 12B lowers to the lifted position with the substrate W still on it, and places the substrate W on the cooling plate 11B.

[0105] Next, the cooling unit 10B cools the substrate W (step S16). This allows the temperature of the substrate W to be rapidly reduced. Next, the indoor transport unit 10C transports the substrate W from the cooling unit 10B to the heat treatment unit 10A, and the center robot 32 unloads the substrate W from the dry treatment unit 10 (step S17). The center robot 32 then loads the substrate W into the bevel unit 20B.

[0106] <Bevel Unit 20B> Figure 9 is a schematic diagram showing an example of the configuration of the bevel unit 20B, and Figure 10 is a schematic plan view showing an example of the configuration of the bevel unit 20B. In the examples of Figures 9 and 10, the bevel unit 20B includes a substrate holder 21B, a bevel nozzle 22B, and a guard 23B.

[0107] <Substrate holding part 21B> The substrate holder 21B holds the substrate W in a horizontal position while rotating the substrate W around the rotation axis Q1. An example of the specific configuration of the substrate holder 21B is the same as that of the substrate holder 21A, so a repetitive explanation will be avoided.

[0108] <Bevel nozzle 22B> In the examples shown in Figures 9 and 10, multiple bevel nozzles 22B are provided. In the illustrated examples, the multiple bevel nozzles 22B are held together by a holding member 221B. The multiple bevel nozzles 22B are arranged horizontally and are held by the holding member 221B with the nozzles penetrating the holding member 221B vertically.

[0109] In the illustrated example, multiple bevel nozzles 22B are provided to move between a bevel processing position and a bevel standby position by a nozzle movement mechanism 222B. The bevel processing position is the position where the bevel nozzles 22B discharge fluid toward the substrate W, and is a position perpendicular to the substrate W. The bevel standby position is a position where the bevel nozzles 22B do not discharge fluid toward the substrate W, and is, for example, a position radially outside the end face of the substrate W. In the example in Figure 10, the bevel nozzles 22B located in the bevel processing position are shown by solid lines, and the bevel nozzles 22B located in the bevel standby position are shown by dashed lines. When the bevel nozzles 22B are stopped in the bevel standby position, physical collisions between the bevel nozzles 22B and the center robot 32 can be avoided when loading or unloading the substrate W.

[0110] In the illustrated example, the nozzle moving mechanism 222B moves multiple bevel nozzles 22B together by moving the holding member 221B. In the illustrated example, the nozzle moving mechanism 222B has an arm swivel mechanism, which specifically includes an arm 223B, a support column 224B, and a drive unit 225B. The arm 223B has a rod shape extending horizontally, with its tip connected to the holding member 221B and its base connected to the support column 224B. The support column 224B has a rod shape extending vertically and is rotatable around its central axis. The drive unit 225B includes, for example, a motor and rotates the support column 224B around its central axis. As a result, the arm 223B connected to the support column 224B swivels, and the multiple bevel nozzles 22B connected to the arm 223B move together along an arc-shaped movement path. The support column 224B is installed such that the bevel processing position and the standby position are located on the movement path of the bevel nozzle 22B.

[0111] When the multiple bevel nozzles 22B are stopped at the beveling position, the multiple bevel nozzles 22B are arranged in a circumferential direction along the periphery of the substrate W (see Figure 10). In the example in Figure 10, four bevel nozzles 22Ba to 22Bd are provided as the multiple bevel nozzles 22B. The four bevel nozzles 22Ba to 22Bd are provided in this order in the rotational direction of the substrate W. That is, bevel nozzle 22Ba is located furthest upstream, and bevel nozzle 22Bd is located furthest downstream. Here, "upstream" means a position within at least half a turn. In other words, bevel nozzle 22Ba is located at least half a turn upstream of bevel nozzle 22Bd, and preferably within a quarter of a turn upstream. That is, the angle that bevel nozzle 22Ba and bevel nozzle 22Bd make with respect to the rotation axis Q1 is preferably 90 degrees or less.

[0112] In this configuration, the bevel nozzle 22Ba discharges an inert gas, the bevel nozzle 22Bb discharges a film removal solution (specifically, an acidic chemical solution containing fluorine), the bevel nozzle 22Bc discharges a rinsing solution, and the bevel nozzle 22Bd discharges an alkaline chemical solution.

[0113] The bevel nozzle 22Bb is connected to the downstream end of the supply pipe 221Bb, and the upstream end of the supply pipe 221Bb is connected to the film removal liquid supply source 223Bb. The supply pipe 221Bb is equipped with a valve 222Bb, and the discharge and cessation of the film removal liquid from the bevel nozzle 22Bb can be switched by opening and closing the valve 222Bb. The film removal liquid is, for example, hydrofluoric acid. The film removal liquid can remove the protective film F1.

[0114] The bevel nozzle 22Bc is connected to the downstream end of the supply pipe 221Bc, and the upstream end of the supply pipe 221Bc is connected to the rinse liquid supply source 223Bc. The supply pipe 221Bc is equipped with a valve 222Bc, and the discharge and cessation of the rinse liquid from the bevel nozzle 22Bc can be switched by opening and closing the valve 222Bc. As the rinse liquid, pure water, hot water, ozonated water, magnetic water, reduced water (hydrogen water), various organic solvents (e.g., IPA (isopropyl alcohol)), functional water (e.g., carbon dioxide water) may be used. The rinse liquid washes away and removes chemicals (e.g., film removal solution and alkaline chemical solution) on the substrate W.

[0115] The bevel nozzle 22Bd is connected to the downstream end of the supply pipe 221Bd, and the upstream end of the supply pipe 221Bd is connected to the alkaline chemical supply source 223Bd. The supply pipe 221Bd is equipped with a valve 222Bd, and the discharge and cessation of the alkaline chemical from the bevel nozzle 22Bd can be switched by opening and closing the valve 222Bd. In this embodiment, the alkaline chemical is not used.

[0116] The bevel nozzle 22Ba is connected to the downstream end of the supply pipe 221Ba, and the upstream end of the supply pipe 221Ba is connected to the gas supply source 223Ba. The supply pipe 221Ba is provided with a valve 222Ba, and the discharge and cessation of inert gas from the bevel nozzle 22Ba can be switched by opening and closing the valve 222Ba. The inert gas includes, for example, a noble gas such as argon gas and at least one of nitrogen gas. The inert gas from the bevel nozzle 22Ba blows the chemical solution (e.g., film removal solution) on the peripheral edge of the substrate W radially outward, as will be described later.

[0117] <Guard 23B> The guard 23B has a cylindrical shape that surrounds the substrate holding portion 21B and catches the processing liquid that splashes from the end face of the substrate W. In the example shown in Figure 9, the guard 23B includes a bottom member 231B, an inner guard 232B, and an outer guard 233B.

[0118] The inner guard 232B and the outer guard 233B have a cylindrical shape that surrounds the substrate holding portion 21B, and the outer guard 233B is provided radially outward from the inner guard 232B.

[0119] The upper portion of the inner guard 232B (hereinafter referred to as the upper inclined portion) extends diagonally upward toward the axis of rotation Q1 as it extends vertically upward. The lower portion of the inner guard 232B includes a cylindrical inner circumferential wall portion that extends vertically downward from the inner portion of the lower end of the upper inclined portion, and a cylindrical outer circumferential wall portion that extends vertically downward from the outer portion of the lower end of the upper inclined portion.

[0120] The upper portion of the outer guard 233B (hereinafter referred to as the upper inclined portion) extends diagonally upward toward the axis of rotation Q1 as it extends vertically upward. The upper inclined portion of the outer guard 233B is located vertically above the upper inclined portion of the inner guard 232B and is vertically opposite to the upper inclined portion of the inner guard 232B. The lower portion of the outer guard 233B extends vertically downward from the lower end of the upper inclined portion of the outer guard 233B and is located radially outward from the outer peripheral wall portion of the inner guard 232B.

[0121] The inner guard 232B and the outer guard 233B are provided to be able to move up and down between the guard processing position and the guard standby position, as described later, by the guard lifting mechanism 234B, which will be described later. The guard lifting mechanism 234B raises and lowers the inner guard 232B and the outer guard 233B so that they do not collide with each other. An example of the specific configuration of the guard lifting mechanism 234B is the same as that of the guard lifting mechanism 26A.

[0122] The guard processing position is the position where the upper edges of the inner guard 232B and the outer guard 233B are vertically above the upper surface of the substrate W held by the substrate holding unit 21B. In the example in Figure 9, the inner guard 232B and the outer guard 233B are shown in the guard processing position. The guard standby position is the position where the upper edges of the inner guard 232B and the outer guard 233B are vertically below, for example, the upper surface of the base 211B of the substrate holding unit 21B. When both the inner guard 232B and the outer guard 233B are stopped in the guard standby position, physical collisions between the inner guard 232B and the outer guard 233B and the center robot 32 can be avoided when loading or unloading the substrate W.

[0123] When both the inner guard 232B and the outer guard 233B are stopped at the guard processing position, the processing liquid scattered from the periphery of the substrate W is received by the inner surface of the inner guard 232B. The processing liquid then flows down along the inner surface of the inner guard 232B. The processing liquid is then received by the bottom member 231B as described later. When only the outer guard 233B is stopped at the guard processing position, the processing liquid is received by the inner surface of the outer guard 233B. The processing liquid then discharges from the gap between the lower part of the outer peripheral wall of the inner guard 232B and the lower part of the outer guard 233B.

[0124] The bottom member 231B is positioned vertically below the inner guard 232B and the outer guard 233B. The bottom member 231B is a member that receives the processing liquid flowing vertically downward along the inner circumferential surface of the inner guard 232B. The bottom member 231B includes an inner circumferential wall portion, an outer circumferential wall portion provided outside the inner circumferential wall portion, and an annular bottom portion connecting the lower end of the inner circumferential wall portion and the lower end of the outer circumferential wall portion. In the example shown in Figure 9, the outer circumferential wall portion of the bottom member 231B is housed between the inner circumferential wall portion and the outer circumferential wall portion of the inner guard 232B.

[0125] A drainage groove (not shown) is formed in the annular bottom of the bottom member 231B. This drainage groove is connected to the factory's drainage line. An exhaust liquid mechanism is also connected to this drainage groove, which forcibly exhausts the liquid from within the groove, creating a negative pressure state in the space between the inner wall and the outer wall of the bottom member 231B.

[0126] <Surface protection part 24B> Incidentally, the processing liquid discharged from the bevel nozzle 22B lands at a landing position P1 near the target landing position on the upper surface of the substrate W, and flows mainly radially outward due to the centrifugal force caused by the rotation of the substrate W. However, some of the processing liquid may bulge radially inward as it flows on the upper surface of the substrate W. In the protective beveling process (step S2), if some of the film removal liquid moves the upper surface of the protective film F1 toward the center of the substrate W, the protective film F1 on the center side will also be removed, and a portion of the central region Wa2 of the device surface Wa of the substrate W may be exposed. In this case, the protective film F1 cannot properly protect the central region Wa2 of the device surface Wa.

[0127] Therefore, in the examples of Figures 9 and 10, a surface protection section 24B is provided on the bevel unit 20B to suppress the movement of the processing liquid toward the center of the substrate W. The surface protection section 24B discharges gas toward the center of the protective film F1 on the substrate W. The gas collides with the center of the substrate W and flows radially outward in all directions from the center of the substrate W. In this way, the gas flows radially outward from the center of the substrate W, and the gas presses the processing liquid on the substrate W radially outward. Therefore, the movement of the processing liquid radially inward on the substrate W can be suppressed. As the gas, for example, an inert gas can be used. The inert gas includes, for example, at least one of a noble gas such as argon gas and nitrogen gas.

[0128] In the example shown in Figure 9, the surface protection section 24B is positioned vertically above the substrate W held by the substrate holding section 21B and includes a head 244B having a gas nozzle 241B, a cylindrical member 242B, and a shut-off plate 243B, and a gas nozzle moving mechanism 27B. The cylindrical member 242B is positioned so that its central axis is aligned with the vertical direction. The shut-off plate 243B is attached to the lower surface of the cylindrical member 242B. The shut-off plate 243B has a disc shape, and its lower surface is aligned with the horizontal plane. The diameter of the shut-off plate 243B is larger than the diameter of the cylindrical member 242B. The gas nozzle 241B penetrates the cylindrical member 242B and the shut-off plate 243B vertically, and the lower end of the gas nozzle 241B opens on the lower surface of the shut-off plate 243B. This opening is the discharge port of the gas nozzle 241B.

[0129] The upper opening of the gas nozzle 241B is connected to the downstream end of the supply pipe 245B, and the upstream end of the supply pipe 245B is connected to the gas supply source 248B. Inert gas from the gas supply source 248B is supplied to the gas nozzle 241B through the supply pipe 245B and discharged from the gas nozzle 241B. The supply pipe 245B is equipped with a flow regulator 247B and a valve 246B, in that order from the gas supply source 248B side. The flow regulator 247B adjusts the flow rate of gas flowing through the supply pipe 245B. By opening and closing the valve 246B, the discharge and stopping of gas from the gas nozzle 241B can be switched.

[0130] The gas nozzle moving mechanism 27B moves the head 244B between a gas processing position and a gas standby position. The gas processing position is the position when the gas nozzle 241B discharges gas, for example, the position where the gas nozzle 241B is perpendicular to the center of the substrate W. The gas standby position is the position when the gas nozzle 241B does not discharge gas, for example, the position radially outside the end face of the substrate W. When the head 244B is stopped in the gas standby position, physical collisions between the head 244B and the center robot 32 can be avoided when loading or unloading the substrate W. The gas nozzle moving mechanism 27B has, for example, an arm rotation mechanism similar to that of the nozzle moving mechanism 222B.

[0131] <Heating section 25B> The processing speed of the film removal solution may depend on the temperature. For example, when using a film removal solution that is an acidic chemical solution containing fluorine, it is desirable to raise the temperature of the substrate W to some extent in order to increase the processing speed. In the example shown in Figure 9, a heating unit 25B is provided on the bevel unit 20B. The heating unit 25B is positioned opposite the substrate periphery VW1 of the substrate W held by the substrate holding unit 21B, and heats the substrate periphery VW1. This makes it possible to improve the processing speed of the film removal solution. The heating unit 25B may heat the substrate W by radiant heat, or it may heat the substrate W by supplying a high-temperature fluid (e.g., high-temperature gas) to the substrate W. Here, the heating unit 25B heats the substrate W using both radiant heat and high-temperature gas.

[0132] Figure 11 is a schematic plan view showing an example of the configuration of the heating section 25B. In the example shown in Figure 11, the heating section 25B includes a heater 251B and a gas supply section 255B that uses the inside of the heater 251B as part of the flow path.

[0133] The heater 251B has an annular plate shape. Referring also to Figure 9, the heater 251B is arranged in an annular shape around the substrate holder 21B so as to face the portion of the lower surface of the substrate W (i.e., the non-device surface Wb) that is not in contact with the upper surface of the substrate holder 21B. The opposing surface (upper surface) of the heater 251B is, for example, parallel to the non-device surface Wb of the substrate W. The opposing surface of the heater 251B faces the non-device surface Wb of the substrate W at a distance of, for example, about 2 mm to 5 mm.

[0134] The heater 251B is a resistance-type heater in which a heating element (for example, a resistance heating element such as a nichrome wire) 253B is built into a main body 252B made of, for example, silicon carbide (SiC) or ceramics. The main body 252B has an annular plate shape, with the upper surface of the main body 252B corresponding to the upper surface (opposite surface) of the heater 251B, and the lower surface of the main body 252B corresponding to the lower surface of the heater 251B. In a plan view, the heating element 253B is provided within an annular and band-shaped arrangement region. When the heating element 253B generates heat, the main body 252B is heated and its temperature rises. The high-temperature main body 252B can heat the substrate edge VW1 of the substrate W by radiant heat.

[0135] In the example shown in Figure 11, a heating channel 254B is formed inside the main body 252B. The heating channel 254B includes a horizontal channel arranged in the horizontal plane vertically below the heating element 253B. A portion of the horizontal channel is also arranged in the regions radially inward and radially outward from the heating element 253B in a plan view. The heating channel 254B further includes an upstream channel that extends vertically downward from the horizontal channel and opens on the lower surface of the main body 252B, and a plurality of downstream channels that branch vertically upward from the radially inward and radially outward regions of the horizontal channel and open as a plurality of discharge ports 25Ba on the upper surface of the main body 252B.

[0136] Referring also to Figure 9, the upstream port of the heating channel 254B is connected to the downstream end of the supply pipe 256B, and the upstream end of the supply pipe 256B is connected to the gas supply source 259B. Gas (e.g., inert gas) from the gas supply source 259B is discharged from the outlet 25Ba through the supply pipe 256B and the heating channel 254B, and flows toward the peripheral region of the non-device surface Wb of the substrate W. As the gas flows through the heating channel 254B inside the main body 252B, the gas receives heat from the main body 252B and is heated. This high-temperature gas flows from the outlet 25Ba toward the non-device surface Wb of the substrate W, and the high-temperature gas heats the substrate W. The supply pipe 256B is equipped with a valve 257B and a flow regulator 258B. By opening and closing the valve 257B, the discharge and cessation of the high-temperature gas from the outlet 25Ba of the heating channel 254B are switched. The flow regulator 258B adjusts the gas flow rate.

[0137] <Backside bevel> In the examples shown in Figures 9 and 11, the bevel unit 20B is also provided with a bevel nozzle 26B for the back surface. The bevel nozzle 26B discharges the processing liquid toward the peripheral region of the non-device surface Wb of the substrate W. The bevel nozzle 26B is positioned vertically below the non-device surface Wb of the substrate W held by the substrate holding portion 21B, and perpendicularly opposite the peripheral region of the non-device surface Wb of the substrate W. Such a bevel nozzle 26B is located radially outward from the substrate holding portion 21B.

[0138] In the example shown in Figure 11, a recess 25Bb is formed in the heater 251B. The recess 25Bb is recessed radially inward and penetrates the heater 251B vertically. The bevel nozzle 26B is provided in the recess 25Bb.

[0139] In the examples shown in Figures 9 and 11, two bevel nozzles 26B are provided. One bevel nozzle 26B is connected to the downstream end of a supply pipe 261B, and the upstream end of the supply pipe 261B is connected to a film removal liquid supply source 263B. Film removal liquid from the film removal liquid supply source 263B is supplied to the bevel nozzle 26B through the supply pipe 261B and discharged from the discharge port of the bevel nozzle 26B toward the peripheral region of the non-device surface Wb of the substrate W. A valve 262B is provided in the supply pipe 261B. By opening and closing the valve 262B, the discharge and stopping of film removal liquid from the bevel nozzle 26B can be switched.

[0140] The other bevel nozzle 26B is connected to the downstream end of the supply pipe 265B, and the upstream end of the supply pipe 265B is connected to the rinse liquid supply source 268B. Rinse liquid from the rinse liquid supply source 268B is supplied to the bevel nozzle 26B through the supply pipe 265B and discharged from the discharge port of the bevel nozzle 26B toward the peripheral region of the non-device surface Wb of the substrate W. A valve 266B is provided in the supply pipe 265B. By opening and closing the valve 266B, the discharge and stopping of rinse liquid from the bevel nozzle 26B can be switched.

[0141] <Protective bevel treatment> Figure 12 is a flowchart showing a specific example of protective beveling. First, the central robot 32 loads the substrate W into the beveling unit 20B (step S21). The substrate holding unit 21B holds the loaded substrate W.

[0142] Next, the substrate holding unit 21B rotates the substrate W around the rotation axis Q1 (step S22). The nozzle moving mechanism 222B moves the bevel nozzle 22B to the beveling position, and the bevel unit 20B (more specifically the control unit 90) opens valves 257B and 222Ba to discharge gas from the gas nozzle 241B and the bevel nozzle 22Ba (step S23). The heating unit 25B also heats the peripheral edge of the substrate W (step S24). Specifically, the bevel unit 20B starts energizing the heating element and opens valve 257B. The guard lifting mechanism 234B raises the guard corresponding to the film removal liquid from the inner guard 232B and outer guard 233B to the guarding position.

[0143] Next, the bevel unit 20B opens valves 222Bb and 262B to discharge the film removal liquid from bevel nozzles 22Bb and 26B (step S25). The film removal liquid discharged from bevel nozzle 22Bb lands on the upper surface of the protective film F1 at the application position P1, flows radially outward across the upper surface of the protective film F1, and a portion of it splashes from the periphery of the substrate W (see also Figure 6(b)). At this time, the film removal liquid acts on the protective periphery VF1 of the protective film F1, and the protective periphery VF1 can be removed.

[0144] A portion of the remaining film removal solution on the protective film F1 remains on the protective peripheral edge VF1 and circulates around the rotation axis Q1 as the substrate W rotates. Here, gas is discharged from a bevel nozzle 22Ba located upstream of the bevel nozzle 22Bb. This gas blows away the film removal solution that remains on the protective peripheral edge VF1 and has made almost one full rotation, radially outward. In other words, the old film removal solution that has sunk to the liquefaction position P1 and made almost one full rotation around the rotation axis Q1 is blown away by the gas from the bevel nozzle 22Ba. Therefore, the old film removal solution hardly reaches the liquefaction position P1. This prevents the new film removal solution from colliding with the old film removal solution at the liquefaction position P1. Therefore, it is possible to prevent the film removal solution from becoming excessive and bulging radially inward at the liquefaction position P1. Furthermore, the point where the gas from the bevel nozzle 22Ba collides with the upper surface of the substrate W is radially inward from the point P1 where the film removal solution from the bevel nozzle 22Bb is applied. This allows the gas to flow from radially inward to radially outward relative to the film removal solution, enabling the film removal solution to be blown radially outward more reliably.

[0145] The film removal liquid discharged from the bevel nozzle 26B lands at the application point on the non-device surface Wb of the substrate W, flows radially outward along the non-device surface Wb, and splashes from the periphery of the substrate W (see also Figure 6(b)). At this time, the film removal liquid can remove the same substance as the protective film F1 adhering to the non-device surface Wb.

[0146] Although not shown in Figures 9 and 11, a bevel nozzle 26B for discharging gas may be provided, similar to the bevel nozzle 22Ba. The gas bevel nozzle 26B is located upstream of the bevel nozzle 26B for the film removal liquid in the rotational direction of the substrate W, and discharges gas. This gas blows away the old film removal liquid that has remained and circulated on the non-device surface Wb radially outward. This prevents an excess of film removal liquid at the application point on the non-device surface Wb. If there is an excess of film removal liquid at the application point on the non-device surface Wb, the film removal liquid can wrap around the edge of the substrate W and reach the upper surface of the protective film F1, pushing the film removal liquid on the protective film F1 towards the center of the substrate W. Such pushing can be suppressed.

[0147] Furthermore, since the heating unit 25B heats the substrate peripheral edge VW1 of the substrate W, the temperature of the protective peripheral edge VF1 on top of it can also be raised. Therefore, the temperature drop of the film removal liquid on the protective peripheral edge VF1 can be suppressed, and the film removal liquid can remove the protective peripheral edge VF1 at a higher processing speed. Thus, the protective peripheral edge VF1 can be removed at a high processing speed. Note that the point of contact of the rinsing liquid from the bevel nozzle 22Bc is radially inward from the point of contact P1 of the film removal liquid from the bevel nozzle 22Bb. This allows the rinsing liquid to properly flush away the film removal liquid. The same applies to the bevel nozzle 26B.

[0148] When the protective peripheral portion VF1 is sufficiently removed, the bevel unit 20B closes valves 222Bb and 262B to stop the supply of film removal fluid. More specifically, when the elapsed time since the supply of film removal fluid has exceeded a first predetermined time, the bevel unit 20B closes valves 222Bb and 262B. The elapsed time is measured by a known timer circuit in the control unit 90.

[0149] Next, the guard lifting mechanism 234B changes the raised or lowered state of the guard 23B as needed. In other words, when the guard for the rinsing liquid is different from the guard for the film removal liquid, the guard lifting mechanism 234B raises the guard corresponding to the rinsing liquid to the guard processing position.

[0150] Next, the bevel unit 20B opens valves 222Bc and 266B, causing the rinsing liquid to be discharged from bevel nozzles 22Bc and 26B (step S26). The rinsing liquid that has landed on the surface of the substrate W is subjected to centrifugal force due to the rotation of the substrate W, and flows radially outward, scattering outward from the edge of the substrate W. This allows the film removal liquid on the surface of the substrate W to be pushed radially outward by the rinsing liquid. In other words, the film removal liquid on the surface of the substrate W can be replaced with the rinsing liquid.

[0151] When the film removal solution has been sufficiently replaced by the rinsing solution, the bevel unit 20B closes valves 222Bc and 266B to stop the supply of rinsing solution. More specifically, when the elapsed time since the supply of rinsing solution has exceeded a second predetermined time, the bevel unit 20B closes valves 222Bc and 266B.

[0152] Next, the substrate W is dried (step S27). As a specific example, the substrate holder 21B increases the rotation speed of the substrate W, causing the substrate W to rotate at high speed (so-called spin drying).

[0153] Next, the bevel unit 20B closes valves 222Ba and 257B, the nozzle moving mechanism 222B moves the multiple bevel nozzles 22B to the bevel standby position, the heating unit 25B stops heating, the substrate holding unit 21B stops the rotation of the substrate W and releases the substrate W. Next, the center robot 32 removes the substrate W from the bevel unit 20B (step S28). The center robot 32 then carries the substrate W into the cleaning unit 20C.

[0154] <Washing Unit 20C> Figure 13 is a schematic diagram showing an example of the configuration of the cleaning unit 20C. The cleaning unit 20C includes a substrate holder 21C, a cleaning nozzle 22C, and a guard 23C.

[0155] The substrate holder 21C holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1. In the example shown in Figure 13, the substrate holder 21C includes a spin base 211C, a plurality (three or more) of chuck pins 212C, and a rotation mechanism 213C. The spin base 211C has a disc shape and is positioned horizontally with its thickness direction aligned with the vertical direction. The outer diameter of the disc-shaped spin base 211C is slightly larger than the diameter of the circular substrate W held by the substrate holder 21 (see Figure 13). Therefore, the spin base 211C has an upper surface that is perpendicular to the entire lower surface (i.e., the non-device surface Wb) of the substrate W to be held.

[0156] In the example shown in Figure 13, multiple chuck pins 212C are erected on the periphery of the upper surface of the spin base 211C. The multiple chuck pins 212C are arranged at equal intervals along the circumference corresponding to the periphery of the circular substrate W. Each chuck pin 212C is provided to be drivable between a holding position in contact with the periphery of the substrate W and an open position away from the periphery of the substrate W. The multiple chuck pins 212C are driven in conjunction by a link mechanism (not shown) housed within the spin base 211C. The substrate holding section 21C can hold the substrate W in a horizontal position above the spin base 211C and close to the upper surface by stopping the multiple chuck pins 212C in their respective holding positions, and can release the substrate W by stopping the multiple chuck pins 212C in their respective open positions.

[0157] The rotation mechanism 213C rotates the spin base 211C around the rotation axis Q1. As a result, the substrate W held by the multiple chuck pins 212C also rotates around the rotation axis Q1. An example configuration of the rotation mechanism 213C is the same as that of the rotation mechanism 212A.

[0158] Note that the substrate holding portion 21C does not necessarily need to include the chuck pin 212C; for example, it may hold the substrate W by suction, similar to the substrate holding portions 21A and 21B.

[0159] The cleaning nozzle 22C discharges processing liquid toward the substrate W, supplying the processing liquid to the substrate W. The cleaning nozzle 22C is connected to the downstream end of the supply pipe 221C, and the upstream end of the supply pipe 221C is connected to the processing liquid supply source 223C. The processing liquid from the processing liquid supply source 223C is supplied to the cleaning nozzle 22C through the supply pipe 221C and discharged from the discharge port 22c of the cleaning nozzle 22C. A valve 222C is provided in the supply pipe 221C. Opening and closing the valve 222C switches the discharge of processing liquid from the cleaning nozzle 22C on and off.

[0160] The cleaning unit 20C is configured to be supplied with multiple types of processing liquids. More specifically, the cleaning unit 20C is capable of selectively supplying foreign matter removal liquid and film removal liquid. For example, it may be provided with two cleaning nozzles 22C that discharge the foreign matter removal liquid and the film removal liquid, respectively.

[0161] In the example shown in Figure 13, the cleaning nozzle 22C is provided to move between a cleaning processing position and a cleaning standby position by a nozzle moving mechanism 25C. The cleaning processing position is the position where the cleaning nozzle 22C discharges the processing liquid toward the substrate W, for example, a position perpendicular to the center of the substrate W. The cleaning standby position is the position where the cleaning nozzle 22C does not discharge the processing liquid toward the substrate W, for example, a position radially outside the edge face of the substrate W. When the cleaning nozzle 22C is stopped in the processing standby position, physical collision between the cleaning nozzle 22C and the center robot 32 can be avoided when loading or unloading the substrate W. The nozzle moving mechanism 25C has, for example, an arm rotation mechanism similar to that of the nozzle moving mechanism 222B.

[0162] In the example shown in Figure 13, the cleaning unit 20C is also provided with a fixed nozzle 24C. The fixed nozzle 24C is positioned vertically above the substrate W held by the substrate holding section 21C and radially outward from the end face of the substrate W. The fixed nozzle 24C is connected to the downstream end of the supply pipe 241C, and the upstream end of the supply pipe 241C is connected to the rinse liquid supply source 243C. Rinse liquid from the rinse liquid supply source 243C is supplied to the fixed nozzle 24C through the supply pipe 241C and discharged from the discharge port of the fixed nozzle 24C toward the upper surface of the substrate W (i.e., the device surface Wa). A valve 242C is provided in the supply pipe 241C. By opening and closing the valve 242C, the discharge and stopping of rinse liquid from the fixed nozzle 24C can be switched.

[0163] The guard 23C is a component for receiving processing liquid splashed from the end face of the substrate W. The guard 23C has a cylindrical shape that surrounds the substrate holding portion 21C and includes, for example, a plurality of guards that can be raised and lowered independently of each other. In the example in Figure 13, the plurality of guards 23C are shown as an inner guard 231C, a middle guard 232C, and an outer guard 233C. Each guard 231C to 233C surrounds the substrate holding portion 21C and has a shape that is substantially rotationally symmetric with respect to the axis of rotation Q1.

[0164] The function of guard 23C is the same as that of guard 23B, and the inner guard 231C, middle guard 232C, and outer guard 233C are components for receiving different types of processing liquids. Although the specific shape of guard 23C illustrated in Figure 13 differs from that of guard 23B, the shape of guard 23C itself is not essential to this embodiment, so a detailed explanation is omitted here.

[0165] Guards 231C to 233C can be raised and lowered by the guard lifting mechanism 26C. The guard lifting mechanism 26C raises and lowers guards 231C to 233C between their respective guard processing positions and guard standby positions so that they do not collide with each other. In the example in Figure 13, guards 231C to 233C located in the guard standby position are shown by solid lines, and a portion of guards 231C to 233C located in the guard processing positions are shown by dashed lines. An example of the configuration of the guard lifting mechanism 26C is the same as that of the guard lifting mechanism 234B.

[0166] <Substrate beveling and protective film removal process> Figure 14 is a flowchart showing a specific example of substrate beveling (step S3) and protective film removal (step S4). First, the central robot 32 loads the substrate W into the cleaning unit 20C (step S31). The substrate holding unit 21C holds the loaded substrate W.

[0167] Next, the substrate holding unit 21C rotates the substrate W (step S32). The guard lifting mechanism 26C raises the guard corresponding to the foreign matter removal liquid from among the guards 231C to 233C to the guard processing position.

[0168] Next, the cleaning unit 20C supplies a foreign matter removal liquid to the peripheral edge VW1 of the substrate W (step S33). Specifically, the nozzle moving mechanism 25C moves the cleaning nozzle 22C to the cleaning position, and the cleaning unit 20C (more specifically, the control unit 90) opens the valve 222C corresponding to the foreign matter removal liquid, causing the foreign matter removal liquid to be discharged from the discharge port 22c of the cleaning nozzle 22C. The foreign matter removal liquid is, for example, high-temperature SPM. The foreign matter removal liquid lands on the upper surface of the protective film F1, and, due to the centrifugal force accompanying the rotation of the substrate W, flows radially outward along the upper surface of the protective film F1, and then flows through the peripheral region Wa1 of the substrate W (see also Figure 6(c)). As a result, the foreign matter removal liquid acts on the foreign matter M1 in the peripheral region Wa1 of the substrate W, and the foreign matter M1 can be removed. The foreign matter removal liquid can also wrap around the end face of the substrate W and reach the peripheral region of the non-device surface Wb of the substrate W. In this case, the foreign matter removal solution can also remove foreign matter M1 from the peripheral regions of the end face and non-device surface Wb of the substrate W.

[0169] When the foreign matter M1 is sufficiently removed, the cleaning unit 20C closes the valve 222C corresponding to the foreign matter removal liquid. More specifically, when the elapsed time since the supply of the foreign matter removal liquid has exceeded a third predetermined time, the cleaning unit 20C closes the valve 222C corresponding to the foreign matter removal liquid.

[0170] Next, the guard lifting mechanism 26C changes the raised or lowered state of the guard 23C as needed. In other words, if the guard for the rinsing liquid is different from the guard for the foreign matter removal liquid, the guard lifting mechanism 26C raises the guard corresponding to the rinsing liquid to the guard processing position.

[0171] Next, the cleaning unit 20C supplies rinsing fluid to the substrate W (step S34). As a specific example, the cleaning unit 20C opens valve 242C and discharges rinsing fluid from the outlet of fixed nozzle 24C. The rinsing fluid lands on the center of the upper surface of the protective film F1 and flows radially outward across the upper surface of the protective film F1. The rinsing fluid then flows along the peripheral region Wa1 of the substrate W and splashes from the end face of the substrate W. As a result, the foreign matter removal fluid on the substrate W is washed away by the rinsing fluid. In other words, the foreign matter removal fluid on the substrate W is replaced by the rinsing fluid.

[0172] When the foreign matter removal solution has been sufficiently replaced by the rinsing solution, the cleaning unit 20C closes the valve 242C. More specifically, when the elapsed time since the supply of the rinsing solution has exceeded the fourth predetermined time, the cleaning unit 20C closes the valve 242C.

[0173] Next, the guard lifting mechanism 26C changes the raised or lowered state of the guard 23C as needed. In other words, if the guard for the film removal liquid is different from the guard for the rinsing liquid, the guard lifting mechanism 26C raises the guard corresponding to the film removal liquid to the guard processing position.

[0174] Next, the cleaning unit 20C supplies film removal liquid to the substrate W (step S41). Specifically, the cleaning unit 20C opens the valve 222C corresponding to the film removal liquid and discharges the film removal liquid from the discharge port 22c of the cleaning nozzle 22C. The film removal liquid is, for example, hydrofluoric acid. The film removal liquid lands on the center of the upper surface of the protective film F1, flows radially outward across the upper surface of the protective film F1, and then flows along the peripheral region Wa1 of the substrate W, scattering outward from the end face of the substrate W (see also Figure 6(d)). At this time, the film removal liquid acts on the protective film F1 on the substrate W and removes the protective film F1.

[0175] When the protective film F1 is sufficiently removed, the cleaning unit 20C closes the valve 222C corresponding to the film removal liquid. More specifically, when the elapsed time since the supply of the film removal liquid has exceeded the fifth predetermined time, the cleaning unit 20C closes the valve 222C corresponding to the film removal liquid.

[0176] Next, the guard lifting mechanism 26C changes the raised or lowered state of the guard 23C as needed. In other words, if the guard for the rinsing liquid is different from the guard for the film removal liquid, the guard lifting mechanism 26C raises the guard corresponding to the rinsing liquid to the guard processing position.

[0177] Next, the cleaning unit 20C supplies rinsing fluid to the substrate W (step S42). As a specific example, the cleaning unit 20C opens valve 242C and discharges rinsing fluid from the outlet of fixed nozzle 24C. The rinsing fluid lands on the center of the device surface Wa of the substrate W, flows radially outward along the device surface Wa, and splashes outward from the edge of the substrate W. As a result, the film removal fluid on the substrate W is washed away by the rinsing fluid. In other words, the film removal fluid on the substrate W is replaced by the rinsing fluid.

[0178] When the film removal solution has been sufficiently replaced by the rinsing solution, the cleaning unit 20C closes the valve 242C. More specifically, when the elapsed time since the supply of the rinsing solution has exceeded the sixth predetermined time, the cleaning unit 20C closes the valve 242C. In addition, the nozzle moving mechanism 25C moves the cleaning nozzle 22C to the cleaning standby position.

[0179] Next, the cleaning unit 20C dries the substrate W (step S43). As a specific example, the substrate holding unit 21C increases the rotation speed of the substrate W, causing the substrate W to rotate at high speed (so-called spin drying). Once the substrate W is sufficiently dry, the substrate holding unit 21C stops the rotation of the substrate W.

[0180] Next, the substrate holding unit 21C releases the substrate W, and the center robot 32 removes the substrate W from the cleaning unit 20C (step S44).

[0181] Through the above operations, the substrate processing apparatus 100 can process the peripheral edge VW1 of the substrate W.

[0182] <Variation> In the above example, during the substrate beveling process (step S3), the cleaning nozzle 22C discharges the foreign matter removal liquid toward the center of the substrate W, causing the foreign matter removal liquid to land on the center of the protective film F1 on the substrate W. However, this is not necessarily the only option. As long as the foreign matter removal liquid is supplied to the peripheral region Wa1 of the substrate W, the landing position of the foreign matter removal liquid may be changed as appropriate. For example, the cleaning nozzle 22C may discharge the foreign matter removal liquid toward a landing position between the center of the protective film F1 and the periphery of the protective film F1.

[0183] Furthermore, in the above example, the protective film formation process forms the protective film F1 by wet processing, and the protective film removal process removes the protective film F1 by wet processing. For this reason, an inexpensive wet processing unit 20 can be used. However, for example, if cost reduction is not required, at least one of the formation and removal of the protective film F1 may be performed by dry processing.

[0184] Furthermore, although the substrate processing apparatus 100 is equipped with a coating unit 20A, a heat treatment unit 10A, a bevel unit 20B, and a cleaning unit 20C, these may be distributed across different processing apparatuses. For example, the coating unit 20A and the heat treatment unit 10A may be provided in a coater-developer (first processing apparatus), while the bevel unit 20B and the cleaning unit 20C may be provided in a second processing apparatus separate from the coater-developer. In this case, each of the first and second processing apparatuses includes a load port 111, and a transport device for transporting a carrier C containing multiple substrates W is provided between the first and second processing apparatuses.

[0185] Here, we will explain the correspondence between the terms in the section on means for solving the problem and the terms in the section on modes for carrying out the invention. The first step of forming a protective film including an SOG film on the main surface of a substrate, wherein the peripheral edge of the main surface is not covered by the protective film, and the area of ​​the main surface inside the peripheral edge is covered by the protective film, corresponds to, for example, step S2, or a set of steps S1 and S2. The second step of removing residue or residual film on the peripheral edge with a processing solution containing a mixture of sulfuric acid and hydrogen peroxide corresponds to step S3. The third step of removing the protective film corresponds to step S4.

[0186] As described above, the substrate processing apparatus 100 and the substrate processing method have been described in detail, but the above description is illustrative in all respects and is not limited thereto. It is understood that countless variations not illustrated can be envisioned without falling outside the scope of this disclosure. The components described in each of the above embodiments and variations can be combined or omitted as appropriate, as long as they do not contradict each other. [Explanation of Symbols]

[0187] 100 Substrate Processing Equipment 21B,21C Board holding part 22b,22c outlet 22B Nozzle No. 1 (Bevel Nozzle) 22C Second nozzle (cleaning nozzle) W board

Claims

1. A step of forming a protective film including an SOG film on the main surface of a substrate, comprising: a first step of forming the protective film such that the peripheral edge of the main surface is not covered by the protective film, and the region of the main surface inside the peripheral edge is covered by the protective film; Following the first step, a second step is performed in which a processing solution containing a mixture of sulfuric acid and hydrogen peroxide is discharged toward the center of the substrate, and the processing solution that has landed on the center of the protective film is flowed toward the peripheral edge of the substrate by rotating the substrate, thereby removing any residue or remaining film on the peripheral edge. A substrate processing method comprising: a third step of removing the protective film after the second step.

2. A step of forming a protective film including an SOG film on the main surface of a substrate, comprising: a first step of forming the protective film such that the peripheral edge of the main surface is not covered by the protective film, and the region of the main surface inside the peripheral edge is covered by the protective film; A second step is performed after the first step, in which a treatment solution containing a mixture of sulfuric acid and hydrogen peroxide is discharged toward the protective film, and the treatment solution, which has been applied only to the region of the substrate radially inward from the peripheral edge, is flowed toward the peripheral edge of the substrate by rotating the substrate, thereby removing any residue or residual film on the peripheral edge. A substrate processing method comprising: a third step of removing the protective film after the second step.

3. A substrate processing method according to claim 1 or claim 2, A substrate processing method wherein the residual film or the residual film comprises at least one of a resist including a hardened layer, amorphous carbon, and NiPt alloy.

4. A substrate processing method according to any one of claims 1 to 3, A substrate treatment method comprising the third step of removing the protective film with a chemical solution containing hydrofluoric acid.

5. A substrate processing method according to any one of claims 1 to 4, The first step includes a protective beveling step in which a chemical solution containing hydrofluoric acid is discharged from a first nozzle toward the substrate, and the peripheral portion of the SOG film formed on the entire surface of the main surface of the substrate is removed with the chemical solution, thereby forming the protective film in the inner region of the main surface. A substrate processing method comprising the second step of discharging the processing liquid toward the substrate from a second nozzle having a larger discharge opening than the discharge opening of the first nozzle, and removing the residue or residual film with the processing liquid.

6. A substrate processing method according to claim 5, In the first step, the chemical solution is discharged from the first nozzle, which is positioned perpendicular to the main surface of the substrate, along a discharge direction that is obliquely outward, to remove the peripheral portion of the SOG film. A substrate processing method comprising the second step, wherein the second nozzle discharges the processing liquid toward the protective film, and the processing liquid that has adhered to the protective film flows from the protective film toward the peripheral edge of the substrate by the rotation of the substrate.

7. A substrate processing method according to claim 5 or claim 6, A substrate processing method further comprising a protective film forming step, which is performed before the protective beveling step, and involves applying a coating liquid to the main surface of the substrate and drying the coating liquid to form the protective film.

8. A substrate holding unit that rotates a substrate while holding it in a horizontal position, wherein the peripheral edge of the main surface is not covered with a protective film including an SOG film, and the region of the main surface inside the peripheral edge is covered with the protective film, A nozzle discharges a processing solution containing a mixture of sulfuric acid and hydrogen peroxide towards the center of the substrate, and the processing solution that has landed on the center of the protective film is flowed from the protective film toward the peripheral edge of the substrate by the rotation of the substrate by the substrate holder, thereby removing any residue or residual film on the peripheral edge of the main surface of the substrate with the processing solution. A substrate processing apparatus comprising:

9. A substrate holding unit that rotates a substrate while holding it in a horizontal position, wherein the peripheral edge of the main surface is not covered with a protective film including an SOG film, and the region of the main surface inside the peripheral edge is covered with the protective film, A nozzle discharges a processing solution containing a mixture of sulfuric acid and hydrogen peroxide towards the protective film, and the processing solution, which has been applied only to the region of the substrate radially inward from the peripheral edge, flows from the protective film toward the peripheral edge of the substrate by the rotation of the substrate by the substrate holder, thereby removing any residue or film on the peripheral edge of the main surface of the substrate with the processing solution. A substrate processing apparatus comprising:

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