A substrate support having a multilayer structure including a coupled heater zone with localized thermal control.

Abstract

A substrate support assembly for supporting a substrate includes a base plate, a ceramic plate disposed on the base plate, and N resistive heaters arranged in X rows and Y columns and coupled to the ceramic plate. X, Y, and N are integers greater than 1, and N is less than or equal to X*Y. Each of the N resistive heaters has a first terminal and a second terminal. The ceramic plate includes Y conductors disposed on a first layer of the ceramic plate and X conductors disposed on a second layer of the ceramic plate. The first terminal of each resistive heater in one of the X rows is directly connected to the Y conductor by a first via. The second terminal of each resistive heater in one of the X rows is directly connected to one of the X conductors by a second via.

Description

Technical Field

[0005] , ,

[0001] [Cross - Reference to Related Applications] This application claims the benefit of U.S. Provisional Application No. 63 / 063,700, filed Aug. 10, 2020. The entire disclosure of the above - referenced application is incorporated herein by reference.

[0002] This disclosure generally relates to substrate processing systems, and more particularly to a substrate support having a multi - layer structure including a coupled heater zone with local thermal control.

Background Art

[0003] The background description provided here is for the purpose of generally presenting the content of the present disclosure. Within the scope described in this background art section, research by the inventors named at the present time, as well as aspects of the description that cannot be separately regarded as prior art at the time of filing, are not admitted as prior art against the present disclosure, whether explicitly or implicitly.

[0004] Substrate processing systems typically include several processing chambers (also called process modules) that perform deposition, etching, and other processes on a substrate such as a semiconductor wafer. Examples of processes that can be performed on a substrate include, but are not limited to, plasma - enhanced chemical vapor deposition (PECVD), chemically enhanced plasma vapor deposition (CEPVD), sputtering physical vapor deposition (PVD), atomic layer deposition (ALD), and plasma - enhanced ALD (PEALD). Additional examples of processes that can be performed on a substrate include, but are not limited to, etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.) and cleaning processes.

[0005] During processing, the substrate is placed on a substrate support assembly, such as a pedestal or electrostatic chuck (ESC), located within the processing chamber of the substrate processing system. A robot typically transfers the substrate from one processing chamber to another in the sequence in which the substrate is processed. During deposition, a gas mixture containing one or more precursors is introduced into the processing chamber, and plasma is struck to activate the chemical reaction. During etching, a gas mixture containing etching gas is introduced into the processing chamber, and plasma is struck to activate the chemical reaction. The processing chamber is periodically cleaned by supplying cleaning gas to the processing chamber and striking it with plasma. [Overview of the project]

[0006] A substrate support assembly for supporting a substrate comprises a base plate, a ceramic plate placed on the base plate, and N resistance heaters arranged in X rows and Y columns and coupled to the ceramic plate. X, Y, and N are integers greater than 1, and N is less than or equal to X*Y. Each of the N resistance heaters has a first terminal and a second terminal. The ceramic plate includes a Y conductor placed in a first layer of the ceramic plate and an X conductor placed in a second layer of the ceramic plate. The first terminal of each resistance heater in one of the X rows is directly connected to the respective Y conductor by a first via. The second terminal of each resistance heater in one of the X rows is directly connected to one of the X conductors by a second via.

[0007] In another feature, the N-resistance heater is electrically insulated from the base plate and is positioned at the bottom of the ceramic plate between the base plate and the ceramic plate.

[0008] In another feature, the N-resistance heater is located in a third layer of the ceramic plate.

[0009] In another feature, the substrate support assembly further comprises a controller configured to connect one of the Y conductors to a power supply and one of the X conductors to a reference potential.

[0010] In another feature, the substrate support assembly further comprises a controller configured to connect the Y conductors to the power supply and the X conductors to the reference potential in sequence by connecting one of the Y conductors to the power supply and one of the X conductors to the reference potential at the same time.

[0011] In another feature, the sequence is based on a temperature profile for processing the substrate.

[0012] In another feature, the substrate support assembly further comprises a controller configured to connect a first conductor of the Y conductor to a power supply for a first period, connect a first conductor of the X conductor to a reference potential for a first period, disconnect the first conductor of the Y conductor from the power supply after the first period, and connect a second conductor of the Y conductor to the power supply for a second period.

[0013] In another feature, the substrate support assembly further comprises a controller configured to connect a first conductor of the Y conductor to a power supply for a first period, connect a first conductor of the X conductor to a reference potential for a first period, disconnect the first conductor of the X conductor from the reference potential after the first period, and connect a second conductor of the X conductor to the reference potential for a second period.

[0014] In another feature, the substrate support assembly further comprises a controller configured to connect a first conductor of the Y conductor to a power supply for a first period, connect a first conductor of the X conductor to a reference potential for a first period, disconnect the first conductor of the Y conductor from the power supply after the first period, disconnect the first conductor of the X conductor from the reference potential after the first period, connect a second conductor of the Y conductor to the power supply for a second period, and connect a second conductor of the X conductor to the reference potential for a second period.

[0015] In another feature, the second layer is adjacent to the base plate, and the first layer is positioned on top of the second layer.

[0016] In another feature, the second layer is adjacent to the base plate, the first layer is placed on the second layer, and the third layer is placed on the first layer.

[0017] In another feature, the first, second, and third layers are arranged in any order.

[0018] In another feature, the substrate support assembly further comprises one or more additional heaters positioned in a third layer of the ceramic plate. The third layer is positioned above or below the first and second layers.

[0019] In another feature, the substrate support assembly further comprises one or more additional heaters positioned in a fourth layer of the ceramic plate. The fourth layer is positioned above or below the first, second, and third layers.

[0020] In another feature, the substrate support assembly further comprises clamp electrodes and one or more additional heaters positioned on a third layer of the ceramic plate. The third layer is positioned on top of the first and second layers.

[0021] In other features, the substrate support assembly further comprises clamp electrodes positioned in a third layer of the ceramic plate. The third layer is positioned above the first and second layers. The substrate support assembly further comprises one or more additional heaters positioned in a fourth layer of the ceramic plate. The fourth layer is positioned below the first and second layers.

[0022] In another feature, the substrate support assembly further comprises clamp electrodes and one or more additional heaters positioned on a fourth layer of the ceramic plate. The fourth layer is positioned on top of the first, second, and third layers.

[0023] In another feature, the substrate support assembly further comprises a clamp electrode disposed in a fourth layer of the ceramic plate. The fourth layer is disposed above the first, second, and third layers. The substrate support assembly further comprises one or more additional heaters disposed in a fifth layer of the ceramic plate. The fifth layer is disposed below the first, second, and third layers.

[0024] In another feature, the substrate support assembly further comprises an adhesive layer disposed between the base plate and the ceramic plate.

[0025] In another feature, the base plate includes channels for flowing a coolant through the base plate.

[0026] In another feature, the system comprises a substrate support assembly, a power supply configured to supply a first DC voltage, and a controller. The controller is configured to sequentially apply the first DC voltage across the X and Y conductors by connecting a pair of the X and Y conductors to the power supply and a reference potential at a time.

[0027] In another feature, the sequence for sequentially applying the first DC voltage across the X and Y conductors is based on a temperature profile for processing the substrate.

[0028] In another feature, the substrate support assembly further comprises one or more additional heaters disposed in a third layer of the ceramic plate, and the third layer is disposed above or below the first and second layers. The power supply is configured to supply a second DC voltage. The controller is configured to supply the second DC voltage to the one or more additional heaters.

[0029] In another aspect, the system includes a substrate support assembly, a power supply configured to supply a first DC voltage, and a controller. The controller is configured to sequentially apply the first DC voltage across the X and Y conductors by connecting a pair of X and Y conductors to the power supply and a reference potential at a time.

[0030] In another aspect, the sequence for sequentially applying the first DC voltage across the X and Y conductors is based on a temperature profile for processing the substrate.

[0031] In another aspect, the substrate support assembly further includes one or more additional heaters disposed in a fourth layer of a ceramic plate. The fourth layer is disposed above or below the first, second, and third layers. The power supply is configured to supply a second DC voltage. The controller is configured to supply the second DC voltage to the one or more additional heaters.

[0032] Other areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings herein. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure.

Brief Description of the Drawings

[0033] The present disclosure will be more fully understood from the detailed description and the accompanying drawings.

[0034] [Figure 1A] FIG. 1A is a diagram illustrating a first example of a substrate processing system according to the present disclosure.

[0035] [Figure 1B] FIG. 1B is a diagram illustrating a second example of a substrate processing system according to the present disclosure.

[0036] [Figure 2A] FIG. 2A is a diagram illustrating an example of a heater array including switches used in a substrate support subsystem.

[0037] [Figure 2B] Figure 2B is a cross-sectional view of the substrate support subsystem including the heater array and switches shown in Figure 2A.

[0038] [Figure 3A] Figure 3A shows an example of a switchless heater array according to this disclosure.

[0039] [Figure 3B] Figure 3B is a cross-sectional view of the substrate support including the heater array shown in Figure 3A.

[0040] [Figure 4] Figure 4 shows the substrate support of Figure 3B, further equipped with zone heaters.

[0041] [Figure 5] Figure 5 shows an example of a controller that controls the heater array shown in Figure 3A.

[0042] [Figure 6A] Figure 6A shows an example of the heater array in Figure 3A, where the first pair of X and Y bus lines are connected to a reference potential and a power supply, respectively.

[0043] [Figure 6B] Figure 6B shows some of several examples of various current paths through different heaters in the heater array of Figure 3A when power is supplied to the heater array as shown in Figure 6A. [Figure 6C] Figure 6C shows some of several examples of various current paths through different heaters in the heater array of Figure 3A when power is supplied to the heater array as shown in Figure 6A. [Figure 6D] Figure 6D shows some of several examples of various current paths through different heaters in the heater array of Figure 3A when power is supplied to the heater array as shown in Figure 6A.

[0044] [Figure 6E] Figure 6E shows an example of the relative power dissipated by the heaters of the heater array in Figure 3A when power is supplied to the heater array shown in Figure 6A.

[0045] [Figure 7A] Figure 7A shows the heater array from Figure 3A, with a second pair of X and Y bus lines connected to the reference potential and power supply, respectively.

[0046] [Figure 7B] Figure 7B shows an example of the heat generated by the heaters in the heater array shown in Figure 3A when power is supplied to the heater array shown in Figure 7A.

[0047] [Figure 8A] Figure 8A shows another example of a switchless heater array according to the present disclosure.

[0048] [Figure 8B] Figure 8B shows an example of the heat generated by the heaters in the heater array shown in Figure 8A when power is supplied to the heater array shown in Figure 8A.

[0049] [Figure 9] Figure 9 shows a method for controlling a heater array according to the present disclosure.

[0050] In these drawings, reference numbers may be reused to refer to similar and / or identical elements. [Modes for carrying out the invention]

[0051] A substrate support includes a heater that heats the substrate during processing. The heater is controlled to maintain a desired temperature profile across the entire substrate. Some substrate supports include an array of heaters (e.g., resistive heaters) and switches (e.g., diodes). The heaters in the array operate independently by controlling the switches. While one of the heaters in the array is turned on and releasing heat, all other heaters in the array that are not selected are turned off and do not release heat. Such a heater array provides a more localized heat output, but the heater array also provides the ability to control each heater in the heater array independently using one switch (e.g., diode) per heater in the heater array. Switches increase manufacturing complexity, add cost, and have reliability and lifespan issues.

[0052] This disclosure provides a switchless heater array. The substrate support according to this disclosure includes only resistive traces as heaters, bus lines directly connected to the heaters, and wired connections to a controller connected to a power supply that provides power to the heaters in the heater array. Switches or switch interconnects for the heaters are not required within the heater array.

[0053] More specifically, the heater array according to this disclosure includes resistive heaters (hereinafter referred to as heaters) arranged along X row conductors (referred to as X conductors or X bus lines) and Y column conductors (referred to as Y conductors or Y bus lines). All heaters in a row are directly connected to the row conductors (X bus lines), and all heaters in a column are directly connected to the column conductors (Y bus lines). The X and Y bus lines do not intersect each other. Selected conductors from the column conductors (i.e., Y bus lines) are connected to a power source, and selected conductors from the row conductors (i.e., X bus lines) are connected to a reference potential (e.g., ground). Conversely, in some embodiments, power is selectively supplied to the X bus lines and the Y bus lines are selectively grounded.

[0054] In a heater array, the maximum amount of heat is generated by heaters connected to both the selected column and the selected row, each connected to the power supply and ground, respectively. The heat generated by every other heater on the selected column and row is relatively small. The heat generated by the remaining heaters in the heater array is even smaller. Although only one X-bus line and one Y-bus line are selected at a time, the direct connection of heaters to the X and Y bus lines makes various current paths available within the heater array, resulting in stepped heat generation across the entire heater array. The heat patterns generated by selecting different combinations of heaters can be used to achieve an overall heating response with localized temperature control.

[0055] By directly connecting heaters to rows and columns of a heater array, the heater array eliminates the need for switches (e.g., diodes), improving operational reliability and lifespan, and reducing the complexity and cost of manufacturing the substrate support. While the fully localized heater response possible when switches are used is not available, a relatively localized temperature response is achieved through coupling between selected and unselected heaters. These and other features of this disclosure are described in detail below.

[0056] This disclosure is structured as follows: First, an example of a substrate processing system that can use the heater array of this disclosure is shown and described with reference to Figures 1A and 1B. Next, an example of a heater array including switches is shown and described with reference to Figures 2A and 2B. An example of a heater array without switches according to this disclosure is shown and described with reference to Figures 3A and 3B. An example of a substrate support including a heater array without switches and additional zone heaters is shown and described with reference to Figure 4. An example of a controller for controlling the heater array is shown and described with reference to Figure 5. Examples of various configurations of the heater array are shown and described with reference to Figures 6A to 8B. A method for controlling the heater array is shown and described with reference to Figure 9.

[0057] Figure 1A shows an example of a substrate processing system 10 according to the present disclosure for etching a substrate such as a semiconductor wafer using inductively coupled plasma. The substrate processing system 10 includes a coil drive circuit 11. In some examples, the coil drive circuit 11 includes an RF source 12, a pulse circuit 14, and a tuning circuit (i.e., a matching circuit) 13. The pulse circuit 14 controls the transformer-coupled plasma (TCP) envelope of the RF signal generated by the RF source 12, and varies the duty cycle of the TCP envelope between 1% and 99% during operation. The pulse circuit 14 and the RF source 12 can be combined or separate.

[0058] The tuning circuit 13 can be directly connected to the induction coil 16. The substrate processing system 10 uses a single coil, but some substrate processing systems can use multiple coils (e.g., inner and outer coils). The tuning circuit 13 tunes the output of the RF source 12 to a desired frequency and / or phase and matches the impedance of the induction coil 16.

[0059] A dielectric window 24 is positioned along the upper side of the processing chamber 28. The processing chamber 28 includes a substrate support (or base) 30 that supports the substrate 34. The substrate support 30 may include an electrostatic chuck (ESC), a mechanical chuck, or other types of chucks. The substrate support 30 includes a base plate 32. A ceramic plate 33 is positioned on the upper surface of the base plate 32. A thermal resistance layer 36 may be positioned between the ceramic plate 33 and the base plate 32. The substrate 34 is placed on the ceramic plate 33 during processing.

[0060] A heater array 35, comprising multiple heaters according to this disclosure, is placed on a ceramic plate 33 to heat the substrate 34 during processing. For example, the heater array 35 includes printed resistor traces embedded in the ceramic plate 33, as described in detail below with reference to Figures 3A and 3B. Additional heaters (not shown) may be placed above or below the heater array 35, as described in detail below with reference to Figure 4.

[0061] The base plate 32 further includes a cooling system 38 for cooling the substrate support 30. The cooling system 38 cools the substrate support 30 using fluid supplied by a fluid supply system 39. For example, the cooling system 38 includes cooling channels through which fluid from the fluid supply system 39 flows to cool the substrate support 30.

[0062] A process gas is supplied to the processing chamber 28, and plasma 40 is generated in the processing chamber 28. The plasma 40 etches the exposed surface of the substrate 34. An RF source 50, a pulse circuit 51, and a bias matching circuit 52 can be used to bias the substrate support 30 and control the ion energy during processing.

[0063] A gas supply system 56 can be used to supply the process gas mixture to the processing chamber 28. The gas supply system 56 may include a process and inert gas source 57, a gas metering system 58 such as a valve and a mass flow controller, and a manifold 59. A gas injector 63 may be located in the center of the dielectric window 24 and is used to inject the gas mixture from the gas supply system 56 into the processing chamber 28. Additionally or alternatively, the gas mixture may be injected from the side of the processing chamber 28.

[0064] A temperature controller 64 can be connected to the heater array 35 and used to control the heater array 35 to control the temperature of the substrate support 30 and the substrate 34. The temperature controller 64 controls the heater array 35 as described in detail below with reference to Figures 3A and 3B. The temperature controller 64 can communicate with the fluid supply system 39 and control the flow of fluid through the cooling system 38 to cool the substrate support 30.

[0065] The exhaust system 65 includes valves 66 and pumps 67 for controlling the pressure in the processing chamber 28 and / or for removing the reactant from the processing chamber 28 by purging or discharge. The etching process can be controlled using the controller 70. The controller 70 controls the components of the substrate processing system 10. The controller 70 monitors system parameters and controls the supply of the gas mixture, the striking, maintenance, and extinction of the plasma, the removal of the reactant, the supply of cooling fluid, etc. In addition, the controller 70 can control various aspects such as the coil drive circuit 11, the RF source 50, and the bias matching circuit 52.

[0066] Figure 1B shows another example of a substrate processing system 100 comprising a processing chamber 102 configured to generate a capacitively coupled plasma. Although the example is described in the context of plasma-enhanced chemical vapor deposition (PECVD), the teachings of this disclosure can be applied to other types of substrate processing, including atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), CVD, or other processes including etching.

[0067] The substrate processing system 100 surrounds the other components of the substrate processing system 100 and includes a processing chamber 102 containing RF plasma (if used). The processing chamber 102 includes an upper electrode 104 and an electrostatic chuck (ESC) 106 or other type of substrate support. During operation, the substrate 108 is placed on the ESC 106.

[0068] For example, the upper electrode 104 may include a gas distribution device 110, such as a showerhead, for introducing and distributing process gas into the processing chamber 102. The gas distribution device 110 may include a stem portion, one end of which is connected to the upper surface of the processing chamber 102. The base portion of the showerhead is generally cylindrical and extends radially outward from the opposite end of the stem portion at a location spaced apart from the upper surface of the processing chamber 102. The substrate-facing surface or faceplate of the base portion of the showerhead includes a plurality of outlets or features (e.g., slots or through holes) through which vaporized precursor, process gas, cleaning gas, or purge gas flows.

[0069] The ESC106 comprises a base plate 112 that functions as a lower electrode. A ceramic plate 114 is positioned on the upper surface of the base plate 112. A thermal resistance layer 116 may be positioned between the ceramic plate 114 and the base plate 112. The ceramic plate 114 includes a heater array 152 according to this disclosure for heating the substrate 108. The heater array 152 comprises printed resistance traces embedded in the ceramic plate 114, as described in detail below with reference to Figures 3A and 3B. Additional heaters (not shown) may be positioned above or below the heater array 152, as described below with reference to Figure 4.

[0070] The base plate 112 further includes a cooling system 118 for cooling the ESC 106. The cooling system 118 cools the ESC 106 using fluid supplied by the fluid supply system 154. For example, the cooling system 118 includes a cooling channel through which fluid from the fluid supply system 154 flows to cool the ESC 106.

[0071] When plasma is used, the RF generation system (or RF source) 120 generates an RF voltage and outputs it to one of the upper electrode 104 and the lower electrode (e.g., the base plate 112 of the ESC 106). The other of the upper electrode 104 and the base plate 112 can be DC grounded, AC grounded, or floating. For example, the RF generation system 120 may include an RF generator 122 that generates RF power supplied to the upper electrode 104 or the base plate 112 by a matching and distribution network 124. In other examples, not shown, the plasma may be generated inductively or remotely and then supplied to the processing chamber 102.

[0072] The gas supply system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas source 132), where N is an integer greater than zero. The gas sources 132 are connected to the manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively referred to as valve 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass flow controller 136). The steam supply system 142 supplies vaporized precursors to the manifold 140 or another manifold (not shown) connected to the processing chamber 102. The output of the manifold 140 is supplied to the processing chamber 102. The gas sources 132 can supply process gas, cleaning gas, or purging gas.

[0073] The temperature controller 150 can be connected to the heater array 152 and used to control the heater array 152 to control the temperature of the ESC 106 and the substrate 108. The temperature controller 150 controls the heater array 152 as described in detail below with reference to Figures 3A and 3B. The temperature controller 150 can communicate with the fluid supply system 154 and control the flow of fluid through the cooling system 118 to cool the ESC 106.

[0074] The reactant can be discharged from the processing chamber 102 using valve 156 and pump 158. The system controller 160 controls the components of the substrate processing system 100.

[0075] Figure 2A shows a heater array 200 containing multiple heaters (resistor elements) arranged on a substrate support (e.g., elements 30 and 106 shown in Figures 1A and 1B). For example, the heater array 200 comprises five Y bus lines (Y1, Y2, Y3, Y4, and Y5) and five X bus lines (X1, X2, X3, X4, and X5) arranged in a grid configuration on a ceramic plate of the substrate support (e.g., elements 33 and 114 shown in Figures 1A and 1B). Note that although Figure 2A shows X=Y, X does not have to be equal to Y, and X and Y can be any integers greater than 1. Alternatively, the heater array 200 may be located elsewhere on the substrate support (e.g., under or at the bottom of the ceramic plate).

[0076] In the embodiment illustrated in Figure 2A, the heater array 200 comprises X*Y (i.e., X multiplied by Y) heaters. Each heater in the heater array 200 can be identified by its location along the X and Y bus lines as heater Hxy, where x and y represent one of the X bus lines and one of the Y bus lines to which heater Hxy is connected, respectively. In some embodiments, the heater array 200 may contain fewer than X*Y heaters (i.e., one or more heaters Hxy may not be present in the heater array 200). For example, in each row X, the number of heating elements may be less than or equal to Y. Similarly, each row Y may have a number of heating elements less than or equal to X.

[0077] The heater array 200 includes Y sets of heaters Hxiy1, Hxiy2, etc., arranged along the Y column of the heater array 200, with i=1 to 5, and X sets of heaters Hx1yj, Hx2yj, etc., arranged along the X rows of the heater array 200, with j=1 to 5. Each heater in the Y set is connected to one of the Y bus lines of the heater array 200. Each heater in the X set is connected to one of the X bus lines of the heater array 300. Specifically, a heater in a column has a first terminal connected to the Y bus line in the column and a second terminal connected to the respective X bus line in the X row, and a heater in a row has a first terminal connected to the respective Y bus line in the Y column and a second terminal connected to the X bus line in the row.

[0078] For example, in a Y-set heater, heater Hxiy1 (i=1~5) has a first terminal directly connected to the Y1 bus line and a second terminal connected to the respective X bus line via the respective switch Sxiy1 (i=1~5), and heater Hxiy2 (i=1~5) has a first terminal directly connected to the Y2 bus line and a second terminal connected to the respective X bus line via the respective switch Sxiy2 (i=1~5).

[0079] In the X set of heaters, each heater Hx1yj (j=1~5) has a first terminal directly connected to its respective Y bus line and a second terminal connected to the X1 bus line via its respective switch Sx1yj (j=1~5), and each heater Hx2yj has a first terminal directly connected to its respective Y bus line and a second terminal connected to the X2 bus line via its respective switch Sx2yj (j=1~5), and so on.

[0080] Switches such as Sxiy1, Sxiy2, and Sx1yj, Sx2yj are collectively called switches Sxy. The number of switches Sxy is equal to the number of heaters Hxy, and is X*Y (i.e., X multiplied by Y).

[0081] The Y and X bus lines are connected to a power source (e.g., a voltage source) and a reference potential (e.g., ground), respectively. A controller (e.g., elements 64 or 150 shown in Figures 1A and 1B) controls switch Sxy. The controller selects and turns on only one switch at a time, connecting only one of the heaters to the power source and ground. All other switches are not selected, and their respective heaters are not turned on. Thus, the controller causes each heater in the heater array 200 to operate individually and independently of the other heaters in the heater array 200. In some embodiments, the controller can select and turn on any number of switches Sxy simultaneously along a single Y bus.

[0082] Figure 2B shows a cross-sectional view of a substrate support 250 including a heater array 200. The substrate support 250 comprises a base plate 252 and a ceramic plate 260. For example, the base plate 252 is made of a metal such as aluminum. The base plate 252 is similar to the base plates 32 and 112 shown in Figures 1A and 1B. The ceramic plate 260 is similar to the ceramic plates 33 and 114 shown in Figures 1A and 1B. A thermal resistance layer 262 (similar to elements 36 and 116 shown in Figures 1A and 1B) may be placed between the ceramic plate 260 and the base plate 252. The base plate 252 includes a cooling system 254 similar to the cooling systems 38 and 118 shown in Figures 1A and 1B.

[0083] The ceramic plate 260 contains several stacked layers of ceramic material. A clamp electrode 270 is placed on the first layer 272, which is the top layer on which the substrate (e.g., elements 34 or 108 shown in Figures 1A and 1B) is placed during processing. A heater Hxy is placed on the second layer 274 below the first layer 272. A Y bus line is placed on the third layer 276. An X bus line and a switch (e.g., a diode) Sxy are placed on the fourth layer 278. The first terminal of the switch Sxy is directly connected to the X bus line. A via 280 connects the first terminal of the heater Hxy directly to the Y bus line. A via 282 connects the second terminal of the heater Hxy to the second terminal of the switch Sxy.

[0084] Although not shown, one or more additional zone heaters (also called primary heaters) may be placed on the ceramic plate 260. For example, these heaters may be placed above the heater array 200 and below the clamp electrodes 270 (e.g., the first layer 272). Alternatively, these heaters may be placed below the heater array 200 (e.g., the fifth layer 290 of the ceramic plate 260).

[0085] Switches (Sxy) increase manufacturing complexity, add cost, and have reliability and lifespan issues. Instead, this disclosure provides a substrate support without switches (Sxy) as follows:

[0086] Figure 3A shows a heater array 300 including multiple heaters (resistor elements) arranged on a substrate support (e.g., elements 30 and 106 shown in Figures 1A and 1B). For example, the heater array 300 comprises five Y bus lines (Y1, Y2, Y3, Y4, and Y5) and five X bus lines (X1, X2, X3, X4, and X5) arranged in a grid pattern on a ceramic plate of the substrate support (e.g., elements 33 and 114 shown in Figures 1A and 1B). Note that although Figure 3A shows X=Y, X does not have to be equal to Y, and X and Y can be any integers greater than 1. Alternatively, the heater array 300 may be located elsewhere on the substrate support. For example, the heater array 300 can be located under or at the bottom of a ceramic plate adjacent to the base plate (i.e., between the ceramic plate and the base plate).

[0087] In the embodiment illustrated in Figure 3A, the heater array 300 comprises X*Y (i.e., X multiplied by Y) heaters. Each heater in the heater array 300 can be identified by its location along the X and Y bus lines as heater Hxy, where x and y represent one of the X bus lines and one of the Y bus lines to which heater Hxy is connected, respectively. In some embodiments, the heater array 300 may contain fewer than X*Y heaters (i.e., one or more heaters Hxy may not be present in the heater array 300). For example, in each row X, the number of heating elements may be less than or equal to Y. Similarly, each row Y may have a number of heating elements less than or equal to X.

[0088] Heater array 300 contains Y sets of heaters Hxiy1, Hxiy2, etc., arranged along the Y column of heater array 300, with i=1 to 5. Heater array 300 also contains X sets of heaters Hx1yj, Hx2yj, etc., arranged along the X rows of heater array 300, with j=1 to 5. Each heater in the Y set is directly connected to one of the Y bus lines of heater array 300. Each heater in the X set is directly connected to one of the X bus lines of heater array 300.

[0089] Specifically, a heater in a column has a first terminal directly connected to the Y bus line in the column and a second terminal directly connected to each X bus line in the X row, and a heater in a row has a first terminal directly connected to each Y bus line in the Y column and a second terminal directly connected to the X bus line in the row.

[0090] For example, in a Y-set heater, heater Hxiy1 (i=1~5) has a first terminal directly connected to the Y1 bus line and a second terminal directly connected to each X bus line, and heater Hxiy2 (i=1~5) has a first terminal directly connected to the Y2 bus line and a second terminal directly connected to each X bus line, and so on.

[0091] In the X set of heaters, heater Hx1yj (j=1~5) has a first terminal directly connected to each Y bus line and a second terminal directly connected to the X1 bus line, and heater Hx2yj (j=1~5) has a first terminal directly connected to each Y bus line and a second terminal directly connected to the X2 bus line, and so on.

[0092] The Y and X bus lines are connected to a controller (for example, element 64 or 150 shown in Figures 1A and 1B, or element 400 shown in Figure 5). The controller connects one of the Y bus lines to a power source (e.g., a voltage source) and one of the X bus lines to a reference potential (e.g., ground). Conversely, in some embodiments, the controller connects one of the X bus lines to a power source and one of the Y bus lines to a reference potential (e.g., ground).

[0093] Figure 3B shows a cross-sectional view of a substrate support 350 including a heater array 300. The substrate support 350 comprises a base plate 352 and a ceramic plate 360. For example, the base plate 352 is made of a metal such as aluminum. The base plate 352 is similar to the base plates 32 and 112 shown in Figures 1A and 1B. The ceramic plate 360 ​​is similar to the ceramic plates 33 and 114 shown in Figures 1A and 1B. A thermal resistance layer 362 (similar to elements 36 and 116 shown in Figures 1A and 1B) may be placed between the ceramic plate 360 ​​and the base plate 352. The base plate 352 includes a cooling system 354 similar to the cooling systems 38 and 118 shown in Figures 1A and 1B.

[0094] The ceramic plate 360 ​​contains several stacked layers of ceramic material. A clamp electrode 370 is placed on the first layer 372, which is the top layer on which the substrate (e.g., elements 34 or 108 shown in Figures 1A and 1B) is placed during processing. The heater Hxy is placed on the second layer 374, below the first layer 372. The Y bus line is placed on the third layer 376. The X bus line is placed on the fourth layer 378. Vias 380 connect the first terminals of the heater Hxy directly to the Y bus lines, respectively. Via 382 connects the second terminals of the heater Hxy directly to one of the X bus lines.

[0095] The second, third, and fourth layers 374, 376, and 378 can be arranged in any order. For example, the second layer 374 can be placed at the bottom of the ceramic plate 360 ​​adjacent to the base plate 352 (i.e., between the ceramic plate 360 ​​and the base plate 352). In some embodiments, instead of being placed in the second layer 374 on the ceramic plate 360, the heater Hxy may be electrically insulated and placed outside the ceramic plate 360 ​​at the bottom of the ceramic plate 360 ​​adjacent to the base plate 352 (i.e., between the ceramic plate 360 ​​and the base plate 352).

[0096] Figure 4 shows one or more additional zone heaters 386 (also called primary heaters) arranged on the ceramic plate 360. For example, these heaters may be located above the heater array 300 and below the clamp electrodes 370 (e.g., the first layer 372). Alternatively, these heaters may be located below the heater array 300 (e.g., the fifth layer 390 of the ceramic plate 360).

[0097] Figure 5 shows a controller 400 that controls the heater array 300. Controller 400 can also control the heater array shown in Figures 7A and 8A. Controller 400 may be similar to controllers 64, 70, 150, and 160 shown in Figures 1A and 1B. Controller 400 is coupled to a row selector 402 and a column selector 404. In some examples, the row and column selectors 402 and 404 may include a demultiplexer. In some examples, the row and column selectors 402 and 404 may include a decoder. Through the row and column selectors 402 and 404, controller 400 selects only one row (i.e., only one X bus line) and only one column (i.e., only one Y bus line) at a time, and connects the selected X and Y bus lines to ground and power supply 406, respectively.

[0098] The power supply 406 can also supply power to the zone heater 386 shown in Figure 3B. For example, the power supply 406 can supply DC power. For example, the power supply 406 may include a voltage generator that can supply DC voltage to the heater array 300 and the zone heater 386. For example, the power supply 406 may include a voltage generator that can supply a first DC voltage to the heater array 300 and a second DC voltage to the zone heater 386. For example, the power supply 406 may include a first voltage generator that can supply a first DC voltage to the heater array 300 and a second voltage generator that can supply a second DC voltage to the zone heater 386.

[0099] Although the row and column selectors 402, 404 are shown as being external to the controller 400, in some embodiments the controller 400 may include the row and column selectors 402, 404. Furthermore, the controller 400 and the row and column selectors 402, 404 are not mounted on the substrate support 350. Instead, the controller 400 and the row and column selectors 402, 404 are located outside the substrate support 350. The X and Y bus lines from the heater array 300 on the substrate support 350 are connected to the row and column selectors 402, 404 on the controller 400.

[0100] Figure 6A shows an example of the heat generated by the heater array 300 (i.e., relative power dissipated) when one of the X bus lines is connected to ground and one of the Y bus lines is connected to power supply 406. The selected X and Y bus lines (i.e., those connected to ground and power supply 406) are shown by dotted lines, and the unselected X and Y bus lines (i.e., those not connected to ground and power supply 406) are shown by solid lines. Heater 450, located at the intersection of the selected X and Y bus lines, is shown by a dotted line. Heater 450 generates the most heat compared to the other heaters in the heater array 300.

[0101] Other heaters besides heater 450 at the intersections of the selected X and Y bus lines are also connected to the selected X and Y bus lines and are indicated by four dotted ellipses 452-1 and 452-1 (collectively referred to as heater 452) and 454-1 and 454-2 (collectively referred to as heater 454). Additional other heaters within heater array 300 are identified by dotted ellipses 460-1, 460-2, 460-3, and 460-4 (collectively referred to as heater 460), and by dotted ellipses 462-1, 462-2, 462-3, and 462-4 (collectively referred to as heater 462).

[0102] Figures 6B, 6C, and 6D show some of several examples of additional current paths within the heater array 300 by direct connection of heaters to the X and Y bus lines within the heater array 300. These current paths are added to the main current path through which current flows through heater 450 as shown in Figure 6A.

[0103] For example, in Figures 6B and 6D, a three-heater current path including one heater from heater 460 also includes one heater from heater 452 and one heater from heater 454. In Figure 6C, a three-heater current path including one heater from heater 462 also includes one heater from heater 452 and one heater from heater 454, but does not include a heater from heater 460.

[0104] Due to these current paths, the heat generated by heaters 460 and 462 is approximately the same. The heat generated by heaters 452 and 454 is greater than the heat generated by heaters 460 and 462, but less than the heat generated by heater 450.

[0105] Figure 6E shows the relative amount of heat generated by the heaters in the heater array 300 as a percentage of the heat generated by the selected heater, which in this example is heater 450, where the heat from the heater is maximum or 100%. The percentage represents the relative power of the other heaters in the heater array 300 to the selected heater 450.

[0106] For example, Figure 6E shows that when selected by the X and Y bus lines as shown in Figure 6A, heater 450, located at the intersection of the selected X and Y bus lines, generates the maximum or 100% of the heat. Other heaters 452 and 454, which are also directly connected to the selected X and Y bus lines but are not located at the intersection of the selected X and Y bus lines, generate less heat than heater 450. Heaters 460 and 462, which are not directly connected to the selected X and Y bus lines, generate even less heat than heaters 452 and 454.

[0107] As shown in the examples in Figures 6A and 6E, all heaters in the heater array 300 operate at full power (100%) once, 20% of full power eight times, and 1% of full power sixteen times in one cycle. For example, in one cycle, the controller 400 can select different pairs of X and Y bus lines (25 pairs in the 5x5 example) and connect them to the power supply 406 and ground in sequence, one pair at a time. The sequence and amount of time for which a pair of X and Y bus lines are connected to the power supply 406 and ground depends on the desired temperature profile for processing the substrate. In some examples, a cycle does not have to involve selecting all 25 pair combinations, and the controller 400 may skip selecting some of the 25 pair combinations depending on the desired temperature profile. In some examples, the first cycle may include a first set of 25 pair combinations, followed by a second cycle including a different set of 25 pair combinations. Various other sequences are also possible.

[0108] Figures 7A and 7B illustrate another example in which a heater 470, distinct from heater 450 in heater array 300, is selected by selecting different pairs of X and Y bus lines in heater array 300. Figure 7B shows the relative amount of heat generated by the heaters in heater array 300 to the selected heater 470, and the percentages represent the relative power of the other heaters to the selected heater 470.

[0109] For example, Figure 7B shows that when selected by the X and Y bus lines as shown in Figure 7A, heater 470, located at the intersection of the selected X and Y bus lines, generates the maximum or 100% of the heat. Other heaters 472-1, 472-2 (collectively referred to as heater 472) and 474-1, 474-2 (collectively referred to as heater 474), which are also directly connected to the selected X and Y bus lines but are not located at the intersection of the selected X and Y bus lines, generate less heat than heater 450. All other heaters, other than heaters 470, 472, and 474, which are not directly connected to the selected X and Y bus lines, generate even less heat than heaters 472 and 474.

[0110] Figures 8A and 8B show alternative configurations of heater arrays with fewer heaters than heater array 300. For example, Figure 8A shows a 5×3 heater array 480 instead of the 5×5 heater array 300 shown in Figures 6A-7A. Figure 8B shows the relative amount of heat generated by the heaters in heater array 480 to a selected heater 481, indicated by a dotted line. The percentage also represents the relative power of the heaters to the selected heater 481, which generates the maximum amount of heat (shown as 100%).

[0111] In Figure 8A, fewer heaters 482-1 and 482-2 (collectively referred to as heaters 482) are connected to the selected Y bus line than the number of heaters 484-1 and 484-2 (collectively referred to as heaters 484) are connected to the selected X bus line. Figure 8B shows that fewer heaters 482 on the selected Y bus line generate more heat than heaters 484 on the selected X bus, and that heaters 482 and 484 generate more heat than the heaters on the unselected X and Y bus lines in heater array 480.

[0112] Therefore, depending on the application and temperature profile requirements, heater arrays with different numbers of heaters, different numbers of bus lines, and different configurations can be mounted on the substrate support. For example, in some embodiments, a heater array including X and Y bus lines (e.g., heater arrays 300, 480) does not need to include an X*Y heater; rather, the heater array can include fewer than X*Y heaters. Regardless of the number of heaters, the number of bus lines, and the configuration of the heater array, the controller 400 can control the heaters in the heater array in various sequences as described above to generate the desired temperature profile for processing the substrate.

[0113] Figure 9 shows a method 500 for controlling a heater array during substrate processing according to the present disclosure. For example, controllers 64, 70, 150, 160 and / or controller 400 shown in Figures 1A and 1B can perform method 500 to control heater arrays 300, 480.

[0114] In 502, method 500 receives a sequence for energizing the heaters in the heater array to process the substrate. That is, the sequence may include an order for selecting the X and Y bus lines of the heater array and supplying power to the selected X and Y bus lines of the heater array. For example, the sequence may be based on a desired temperature profile for the substrate being processed. In 504, method 500 selects the first row and first column of heaters in the heater array (i.e., the first X and Y bus lines) according to the sequence. In 506, method 500 connects the selected row and column of heaters (i.e., the first X and Y bus lines) to a reference potential and voltage source (for example, applying a DC voltage to the heaters in the first X and Y bus lines of the selected row and column of heaters).

[0115] In step 508, method 500 determines whether a predetermined amount of time has elapsed. That is, method 500 applies a DC voltage to the heaters in the selected X and Y bus lines for a predetermined amount of time. The predetermined amount of time is selected based on data related to the sequence. The predetermined amount of time may be the same throughout method 500 (i.e., for all sequence steps) or may change each time steps 504, 506, and 508 are performed by method 500. After the predetermined amount of time has elapsed, method 500 proceeds to step 510.

[0116] In step 510, method 500 determines whether the sequence is complete. If the sequence is not complete, method 500 proceeds to step 512; if the sequence is complete, it proceeds to step 516. In step 510, method 500 disconnects the selected row and / or column of the heater (i.e., the selected X and / or Y bus lines) from the reference potential and / or voltage source, respectively. In step 514, method 500 selects the next row and / or next column of the heater in the heater array (i.e., the next X and / or Y bus lines) according to the sequence and connects the selected row and / or column of the heater to the entire reference potential and voltage source (for example, applying a DC voltage to the entire next X and / or Y bus line of the selected row and / or column of the heater). Method 500 returns to step 508.

[0117] If method 500 determines in 510 that the sequence is complete, method 500 proceeds to step 516. In 516, method 500 decides whether to repeat the same sequence or to acquire a new sequence to energize the heaters in the heater array for subsequent processing of the substrate. Alternatively, method 500 may also terminate after completing the sequence. If the same sequence is to be repeated, method 500 returns to step 504. If a new sequence is to be acquired for subsequent processing of the substrate, method 500 returns to step 502.

[0118] The foregoing description is purely illustrative and is not intended to limit the Disclosure, its application, or its use in any way. The broad teachings of this Disclosure can be implemented in various forms. Thus, while this Disclosure includes specific examples, the true scope of this Disclosure should not be limited to such examples, as other modifications will become apparent upon consideration of the drawings, specification, and the claims below.

[0119] It should be understood that one or more steps in the method may be performed in a different order (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having a particular feature, it is possible to implement one or more of these features described in relation to any embodiment of the disclosure in other embodiments and / or combine them with any feature of any other embodiment (even if such combinations are not expressly described). In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments with one another is within the scope of the disclosure.

[0120] The spatial and functional relationships between elements (e.g., modules, circuit elements, semiconductor layers, etc.) are described using a variety of terms, such as “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “upwards,” “below,” and “positioned.” Furthermore, when a relationship between a first element and a second element is described in the above disclosure, unless it is explicitly described as “direct,” the relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or it may be an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the expression “at least one of A, B, and C” should be interpreted in the sense of logic (A or B or C) using non-exclusive logic OR, and not in the sense of “at least one of A, at least one of B, and at least one of C.”

[0121] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such a system may comprise semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a pedestal, a gas flow system, etc.). These systems may be integrated with electronic equipment for controlling system operation before, during, and after processing of semiconductor wafers or substrates. Such electronic equipment may be called a “controller” and may control various components or sub-components of one or more systems.

[0122] The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or the type of system. Such processes include supplying processing gas, setting temperature (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting radio frequency (RF) generator, setting RF matching circuitry, setting frequency, setting flow rate, setting fluid supply, setting position and movement, loading and unloading wafers to and from tools, and loading and unloading wafers to and from other transport tools and / or load locks connected to or interlocked with a particular system.

[0123] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers that execute program instructions (e.g., software).

[0124] Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operational parameters for executing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to realize one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0125] In some embodiments, the controller may be part of a computer that is integrated with or coupled to the system, or otherwise networked to the system, or coupled to such a computer, or a combination thereof. For example, the controller may be in the “cloud,” or it may be all or part of the fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, change the parameters of the current process, set processing steps following the current process, or start a new process.

[0126] In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet. The remote computer may include a user interface that allows for the entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tools the controller is configured to work with or control.

[0127] Therefore, as described above, the controller may be distributed by comprising, for example, one or more individual controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (for example, at the platform level or as part of a remote computer) and combined to control the processes in the chamber.

[0128] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0129] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, the main computer, another controller, or tools used for material handling to load and unload wafer containers to and from tool locations and / or load ports within the semiconductor manufacturing plant. This disclosure includes the following examples of applications. [Application Example 1] A substrate support assembly for supporting a substrate, base plate and A ceramic plate disposed on the base plate, A Y conductor is disposed in the first layer of the ceramic plate, and X conductor disposed in the second layer of the ceramic plate A ceramic plate including, An N-resistance heater arranged in X rows and Y columns and coupled to the ceramic plate, wherein X, Y, and N are integers greater than 1, and N is less than or equal to X*Y, and each of the N-resistance heaters has a first terminal and a second terminal. Equipped with, The first terminal of each resistor heater in one of the rows X is directly connected to the Y conductor by a first via. The second terminal of each resistor heater in one of the rows X is directly connected to one of the conductors X by a second via. PCB support assembly. [Application Example 2] The substrate support assembly described in Application Example 1, The N-resistance heater is electrically insulated from the base plate and is positioned at the bottom of the ceramic plate between the base plate and the ceramic plate in a substrate support assembly. [Application Example 3] The substrate support assembly described in Application Example 1, The N-resistivity heater is located in a substrate support assembly on a third layer of the ceramic plate. [Application Example 4] The substrate support assembly described in Application Example 1, One of the aforementioned Y conductors is connected to the power supply, One of the aforementioned X conductors is connected to the reference potential. A circuit board support assembly further comprising a controller configured as such. [Application Example 5] The substrate support assembly described in Application Example 1, A substrate support assembly further comprising a controller configured to connect the Y conductor to the power supply and the X conductor to the reference potential in a sequence by simultaneously connecting one of the Y conductors to the power supply and one of the X conductors to the reference potential. [Application Example 6] A substrate support assembly as described in Application Example 5, The sequence is based on a temperature profile for processing the substrate, in a substrate support assembly. [Application Example 7] The substrate support assembly described in Application Example 1, For a first period, the first conductor of the Y conductor is connected to the power supply. During the first period, the first conductor among the X conductors is connected to a reference potential. After the first period, the first conductor of the Y conductor is disconnected from the power supply. Connect the second conductor of the Y conductor to the power supply over the second period. A circuit board support assembly further comprising a controller configured as such. [Application Example 8] The substrate support assembly described in Application Example 1, For a first period, the first conductor of the Y conductor is connected to the power supply. During the first period, the first conductor among the X conductors is connected to a reference potential. After the first period, the first conductor of the X conductor is cut from the reference potential. For a second period, the second conductor of the X conductor is connected to the reference potential. A circuit board support assembly further comprising a controller configured as such. [Application Example 9] The substrate support assembly described in Application Example 1, For a first period, the first conductor of the Y conductor is connected to the power supply. During the first period, the first conductor among the X conductors is connected to a reference potential. After the first period, the first conductor of the Y conductor is disconnected from the power supply. After the first period, the first conductor of the X conductor is cut from the reference potential. For a second period, the second conductor of the Y conductor is connected to the power supply. The second conductor of the X conductor is connected to the reference potential over the second period. A circuit board support assembly further comprising a controller configured as such. [Application Example 10] The substrate support assembly described in Application Example 1, A substrate support assembly wherein the second layer is adjacent to the base plate, and the first layer is positioned on the second layer. [Application Example 11] The substrate support assembly described in Application Example 3, A substrate support assembly wherein the second layer is adjacent to the base plate, the first layer is disposed on the second layer, and the third layer is disposed on the first layer. [Application Example 12] The substrate support assembly described in Application Example 3, The first, second, and third layers are arranged in any order in a substrate support assembly. [Application Example 13] The substrate support assembly described in Application Example 1, A substrate support assembly further comprising one or more additional heaters disposed in a third layer of the ceramic plate, wherein the third layer is disposed above or below the first and second layers. [Application Example 14] The substrate support assembly described in Application Example 3, A substrate support assembly further comprising one or more additional heaters disposed in a fourth layer of the ceramic plate, wherein the fourth layer is located above or below the first, second, and third layers. [Application Example 15] The substrate support assembly described in Application Example 1, A substrate support assembly further comprising a clamp electrode and one or more additional heaters disposed on a third layer of the ceramic plate, wherein the third layer is disposed on top of the first and second layers. [Application Example 16] The substrate support assembly described in Application Example 1, A clamp electrode disposed in a third layer of the ceramic plate, wherein the third layer is disposed on top of the first and second layers, One or more additional heaters disposed in the fourth layer of the ceramic plate, wherein the fourth layer is disposed below the first and second layers and A substrate support assembly that further includes these features. [Application Example 17] The substrate support assembly described in Application Example 3, A substrate support assembly further comprising a clamp electrode and one or more additional heaters disposed on a fourth layer of the ceramic plate, wherein the fourth layer is disposed on top of the first, second, and third layers. [Application Example 18] The substrate support assembly described in Application Example 3, A clamp electrode disposed in the fourth layer of the ceramic plate, wherein the fourth layer is disposed on top of the first, second, and third layers, One or more additional heaters disposed in a fifth layer of the ceramic plate, wherein the fifth layer is disposed below the first, second, and third layers. A substrate support assembly that further enhances this feature. [Application Example 19] The substrate support assembly described in Application Example 1, A substrate support assembly further comprising an adhesive layer disposed between the base plate and the ceramic plate. [Application Example 20] The substrate support assembly described in Application Example 1, The base plate is a substrate support assembly that includes channels for circulating a coolant through the base plate. [Application Example 21] The substrate support assembly described in Application Example 1, A power supply configured to supply a first DC voltage, A controller configured to sequentially apply the first DC voltage to the entire X and Y conductors by connecting a pair of the X and Y conductors at once to the power supply and reference potential, and A system equipped with these features. [Application Example 22] The system described in Application Example 21, The sequence for sequentially applying the first DC voltage across the entire X and Y conductors is based on a temperature profile for processing the substrate, in the system. [Application Example 23] The system described in Application Example 21, The substrate support assembly further comprises one or more additional heaters disposed in a third layer of the ceramic plate, the third layer being disposed above or below the first and second layers. The aforementioned power supply is configured to supply a second DC voltage, The controller is configured to supply the second DC voltage to the one or more additional heaters. system. [Application Example 24] The substrate support assembly described in Application Example 3, A power supply configured to supply a first DC voltage, A controller configured to sequentially apply the first DC voltage to the entire X and Y conductors by connecting a pair of the X and Y conductors at once to the power supply and reference potential, and A system equipped with these features. [Application Example 25] The system described in Application Example 24, The sequence for sequentially applying the first DC voltage across the entire X and Y conductors is based on a temperature profile for processing the substrate, in the system. [Application Example 26] The system described in Application Example 24, The substrate support assembly further comprises one or more additional heaters disposed in a fourth layer of the ceramic plate, the fourth layer being disposed above or below the first, second, and third layers. The aforementioned power supply is configured to supply a second DC voltage, The controller is configured to supply the second DC voltage to the one or more additional heaters. system.

Claims

1. A substrate support assembly for supporting a substrate, base plate and A ceramic plate disposed on the base plate, Y conductors arranged in the first layer of the ceramic plate, X conductors arranged in the second layer of the ceramic plate. A ceramic plate including, N resistor heaters arranged in rows X and columns Y and coupled to the ceramic plate, wherein X, Y, and N are integers greater than 1, and N is less than or equal to X * Y, and each of the N resistor heaters has a first terminal and a second terminal. Equipped with, The first terminal of each resistor heater in one of the rows X is directly connected to the Y conductors by a first via. The second terminal of each resistor heater in one of the X rows is directly connected to one of the X conductors by a second via. When one of the Y conductors is connected to a power source and one of the X conductors is connected to a reference potential, multiple of the N resistance heaters generate heat. The aforementioned X conductors and Y conductors are, Located outside the aforementioned substrate support assembly, and equipped with a demultiplexer or decoder instead of a switch, it is connected to a row and column selector that selects one of the X rows and one of the Y columns at once, PCB support assembly.

2. A substrate support assembly according to claim 1, A substrate support assembly comprising the N resistor heaters, electrically insulated from the base plate and positioned at the bottom of the ceramic plate between the base plate and the ceramic plate.

3. A substrate support assembly according to claim 1, The N resistor heaters are arranged in a substrate support assembly on a third layer of the ceramic plate.

4. A substrate support assembly according to claim 1, One of the Y conductors is connected to the power supply, Connect one of the X conductors to the reference potential. A circuit board support assembly further comprising a controller configured as such.

5. A substrate support assembly according to claim 1, A substrate support assembly further comprising a controller configured to connect one of the Y conductors to a power source and one of the X conductors to a reference potential in a sequence, by connecting one of the Y conductors to a power source and one of the X conductors to a reference potential at the same time.

6. A substrate support assembly according to claim 5, The sequence is based on a temperature profile for processing the substrate, in a substrate support assembly.

7. A substrate support assembly according to claim 1, For a first period, the first conductor of the Y conductors is connected to the power supply. During the first period, the first conductor among the X conductors is connected to the reference potential. After the first period, the first conductor of the Y conductors is disconnected from the power source. Connect the second conductor of the Y conductors to the power supply over the second period. A circuit board support assembly further comprising a controller configured as such.

8. A substrate support assembly according to claim 1, For a first period, the first conductor of the Y conductors is connected to the power supply. During the first period, the first conductor among the X conductors is connected to the reference potential. After the first period, the first conductor among the X conductors is cut from the reference potential. For a second period, the second conductor of the X conductors is connected to the reference potential. A circuit board support assembly further comprising a controller configured as such.

9. A substrate support assembly according to claim 1, For a first period, the first conductor of the Y conductors is connected to the power supply. During the first period, the first conductor among the X conductors is connected to the reference potential. After the first period, the first conductor of the Y conductors is disconnected from the power source. After the first period, the first conductor among the X conductors is cut from the reference potential. For a second period, the second conductor of the Y conductors is connected to the power supply. The second conductor among the X conductors is connected to the reference potential over the second period. A circuit board support assembly further comprising a controller configured as such.

10. A substrate support assembly according to claim 1, A substrate support assembly wherein the second layer is adjacent to the base plate, and the first layer is positioned on the second layer.

11. A substrate support assembly according to claim 3, A substrate support assembly wherein the second layer is adjacent to the base plate, the first layer is disposed on the second layer, and the third layer is disposed on the first layer.

12. A substrate support assembly according to claim 3, A substrate support assembly in which the first, second, and third layers are arranged in any order.

13. A substrate support assembly according to claim 1, A substrate support assembly further comprising one or more additional heaters disposed in a third layer of the ceramic plate, wherein the third layer is located above or below the first and second layers.

14. A substrate support assembly according to claim 3, A substrate support assembly further comprising one or more additional heaters disposed in a fourth layer of the ceramic plate, wherein the fourth layer is located above or below the first, second, and third layers.

15. A substrate support assembly according to claim 1, A substrate support assembly further comprising a clamp electrode and one or more additional heaters disposed on a third layer of the ceramic plate, wherein the third layer is disposed on top of the first and second layers.

16. A substrate support assembly according to claim 1, A clamp electrode disposed in a third layer of the ceramic plate, wherein the third layer is disposed on top of the first and second layers, One or more additional heaters disposed in the fourth layer of the ceramic plate, wherein the fourth layer is disposed below the first and second layers and A substrate support assembly that further enhances this feature.

17. A substrate support assembly according to claim 3, A substrate support assembly further comprising a clamp electrode and one or more additional heaters disposed on a fourth layer of the ceramic plate, wherein the fourth layer is disposed on top of the first, second, and third layers.

18. A substrate support assembly according to claim 3, A clamp electrode disposed in the fourth layer of the ceramic plate, wherein the fourth layer is disposed on top of the first, second, and third layers, One or more additional heaters disposed in a fifth layer of the ceramic plate, wherein the fifth layer is disposed below the first, second, and third layers. A substrate support assembly that further enhances this feature.

19. A substrate support assembly according to claim 1, A substrate support assembly further comprising an adhesive layer disposed between the base plate and the ceramic plate.

20. A substrate support assembly according to claim 1, The base plate is a substrate support assembly that includes channels for circulating a coolant through the base plate.

21. The substrate support assembly according to claim 1, A power supply configured to supply a first DC voltage, A controller configured to sequentially apply the first DC voltage to the entire X and Y conductors by connecting a pair of the X and Y conductors to the power supply and reference potential at once, A system equipped with these features.

22. The system according to claim 21, The sequence for sequentially applying the first DC voltage to the entire X and Y conductors is based on a temperature profile for processing the substrate, in the system.

23. The system according to claim 21, The substrate support assembly further comprises one or more additional heaters disposed in a third layer of the ceramic plate, the third layer being disposed above or below the first and second layers. The power supply is configured to supply a second DC voltage, The controller is configured to supply the second DC voltage to the one or more additional heaters. system.

24. The substrate support assembly according to claim 3, A power supply configured to supply a first DC voltage, A controller configured to sequentially apply the first DC voltage to the entire X and Y conductors by connecting a pair of the X and Y conductors to the power supply and reference potential at once, A system equipped with these features.

25. The system according to claim 24, The sequence for sequentially applying the first DC voltage to the entire X and Y conductors is based on a temperature profile for processing the substrate, in the system.

26. The system according to claim 24, The substrate support assembly further comprises one or more additional heaters disposed in a fourth layer of the ceramic plate, the fourth layer being disposed above or below the first, second, and third layers. The power supply is configured to supply a second DC voltage, The controller is configured to supply the second DC voltage to the one or more additional heaters. system.

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