Wafer splitting method

Abstract

To provide a method for partitioning a wafer to remove processing strain remaining on a chip.SOLUTION: Edges of a chip 116, a first edge 120 and a second edge 121, are melted by irradiation with a laser beam 401. Thus, the edges of the chip 116 can be flattened, and cracks and chips, etc., that are generated on the edges of the chip 116 can be joined. Thus, it is possible to repair at least a portion of machining distortion of the edge of the chip 116. As a result, the fold-resisting strength of the chip 116 can be increased.SELECTED DRAWING: Figure 6

Claims

1. A method for dividing a wafer having a device region on its surface demarcated by division lines, wherein the wafer is divided along the division lines, A back-grinding step in which the back surface of the wafer is ground, A splitting step in which the wafer is split from the surface along the planned splitting line to form multiple chips, A first energy supply step involves supplying energy from the back surface of the wafer to melt at least one portion of the edge, back surface, and side surface of the chip, thereby repairing at least a portion of the processing distortion. Equipped with, The first energy supply step further comprises a side exposure step which pushes the chip to be supplied with energy relatively upward compared to other chips, exposing the side surface of the chip to be supplied with energy. The energy is supplied to the side surface exposed in the side surface exposure step, Methods for dividing wafers.

2. A method for dividing a wafer having a device region on its surface demarcated by division lines, wherein the wafer is divided along the division lines, A groove formation step in which a groove deeper than the finished thickness is formed on the surface of the wafer, After the groove forming step, the wafer is ground from the back surface to the finished thickness, and the wafer is divided to form multiple chips in a back surface grinding step, A first energy supply step involves supplying energy from the back surface of the wafer to melt at least one portion of the edge, back surface, and side surface of the chip, thereby repairing at least a portion of the processing distortion. Equipped with, The first energy supply step further comprises a side exposure step which pushes the chip to be supplied with energy relatively upward compared to other chips, exposing the side surface of the chip to be supplied with energy. The energy is supplied to the side surface exposed in the side surface exposure step, Methods for dividing wafers.

3. A method for dividing a wafer having a device region on its surface demarcated by division lines, wherein the wafer is divided along the division lines, A back-grinding step in which the back surface of the wafer is ground, A splitting step in which the wafer is split from the surface along the planned splitting line to form multiple chips, A first energy supply step involves supplying energy from the back surface of the wafer to melt at least one portion of the edge, back surface, and side surface of the chip, thereby repairing at least a portion of the processing distortion. Equipped with, The first energy supply step is the step of irradiating with a laser beam, The wavelength of the laser beam is characterized by being a wavelength that is absorbed by the wafer. Methods for dividing wafers.

4. A method for dividing a wafer having a device region on its surface demarcated by division lines, wherein the wafer is divided along the division lines, A groove formation step in which a groove deeper than the finished thickness is formed on the surface of the wafer, After the groove forming step, the wafer is ground from the back surface to the finished thickness, and the wafer is divided to form multiple chips in a back surface grinding step, A first energy supply step involves supplying energy from the back surface of the wafer to melt at least one portion of the edge, back surface, and side surface of the chip, thereby repairing at least a portion of the processing distortion. Equipped with, The first energy supply step is the step of irradiating with a laser beam, The wavelength of the laser beam is characterized by being a wavelength that is absorbed by the wafer. Methods for dividing wafers.

5. A method for dividing a wafer having a device region on its surface demarcated by division lines, wherein the wafer is divided along the division lines, A back-grinding step in which the back surface of the wafer is ground, A splitting step in which the wafer is split from the surface along the planned splitting line to form multiple chips, A first energy supply step involves supplying energy from the back surface of the wafer to melt at least one portion of the edge, back surface, and side surface of the chip, thereby repairing at least a portion of the processing distortion. Equipped with, The first energy supply step is the step of irradiating with a laser beam, The wavelength of the laser beam is characterized by being in the range of 500 to 1000 nm. Methods for dividing wafers.

6. A method for dividing a wafer having a device region on its surface demarcated by division lines, wherein the wafer is divided along the division lines, A groove formation step in which a groove deeper than the finished thickness is formed on the surface of the wafer, After the groove forming step, the wafer is ground from the back surface to the finished thickness, and the wafer is divided to form multiple chips in a back surface grinding step, A first energy supply step involves supplying energy from the back surface of the wafer to melt at least one portion of the edge, back surface, and side surface of the chip, thereby repairing at least a portion of the processing distortion. Equipped with, The first energy supply step is the step of irradiating with a laser beam, The wavelength of the laser beam is characterized by being in the range of 500 to 1000 nm. Methods for dividing wafers.

7. A method for dividing a wafer having a device region on its surface demarcated by division lines, wherein the wafer is divided along the division lines, A back-grinding step in which the back surface of the wafer is ground, A splitting step in which the wafer is split from the surface along the planned splitting line to form multiple chips, A first energy supply step involves supplying energy from the back surface of the wafer to melt at least one portion of the edge, back surface, and side surface of the chip, thereby repairing at least a portion of the processing distortion. Equipped with, The method further comprises a second energy supply step of supplying energy from the surface of the wafer to at least one of the edges, back surface, and sides of the chip to melt it, Methods for dividing wafers.

8. A method for dividing a wafer having a device region on its surface demarcated by division lines, wherein the wafer is divided along the division lines, A groove formation step in which a groove deeper than the finished thickness is formed on the surface of the wafer, After the groove forming step, the wafer is ground from the back surface to the finished thickness, and the wafer is divided to form multiple chips in a back surface grinding step, A first energy supply step involves supplying energy from the back surface of the wafer to melt at least one portion of the edge, back surface, and side surface of the chip, thereby repairing at least a portion of the processing distortion. Equipped with, The method further comprises a second energy supply step of supplying energy from the surface of the wafer to at least one of the edges, back surface, and sides of the chip to melt it, Methods for dividing wafers.

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