Wafer manufacturing method
The described method addresses yield loss in semiconductor manufacturing by using laser-induced adhesive melting and removal of defective devices, improving the quality and efficiency of wafer production.
JP7873969B2Active Publication Date: 2026-06-15DISCO CORP
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Patent Information
- Application Number
- JP2022011228
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-01-27
- Publication Date
- 2026-06-15
- Estimated Expiration
- 2042-01-27
AI Technical Summary
Technical Problem
The manufacturing methods for semiconductor devices, such as micro LEDs and stacked device chips, suffer from decreased yield due to defects like defective devices and bonding issues during the manufacturing process, leading to the production of inferior products.
Method used
A wafer manufacturing method involving a laser beam irradiation step to melt the adhesive layer of defective semiconductor devices, followed by a removal step where the devices are released and potentially rebonded with good devices to maintain yield.
Benefits of technology
This method effectively reduces the production of defective devices by removing and replacing them, thereby enhancing the yield and productivity of semiconductor wafers.
✦ Generated by Eureka AI based on patent content.
Abstract
To provide a method for manufacturing a wafer that can suppress reduction of a yield.SOLUTION: The method for manufacturing a wafer includes: a wafer preparation step 101 of preparing a wafer having a plurality of semiconductor devices joined to a substrate wafer by an adhesion layer; a quality determination step 102 of determining the quality of the semiconductor devices joined to the substrate wafer; a laser beam application step 103 of applying a laser beam so that the adhesive layer to which a semiconductor device that is determined to be defective is joined will be heated and melting an adhesive layer for an application target region of the laser beam; and a processing step of processing a semiconductor device in which the adhesive layer is melted by the laser beam application step 103 and the adhesive state is cancelled. The processing step is a removal step 104 for removing a semiconductor device from the substrate wafer.SELECTED DRAWING: Figure 4
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