Wafer manufacturing method

Abstract

To provide a method for manufacturing a wafer that can suppress reduction of a yield.SOLUTION: The method for manufacturing a wafer includes: a wafer preparation step 101 of preparing a wafer having a plurality of semiconductor devices joined to a substrate wafer by an adhesion layer; a quality determination step 102 of determining the quality of the semiconductor devices joined to the substrate wafer; a laser beam application step 103 of applying a laser beam so that the adhesive layer to which a semiconductor device that is determined to be defective is joined will be heated and melting an adhesive layer for an application target region of the laser beam; and a processing step of processing a semiconductor device in which the adhesive layer is melted by the laser beam application step 103 and the adhesive state is cancelled. The processing step is a removal step 104 for removing a semiconductor device from the substrate wafer.SELECTED DRAWING: Figure 4

Description

【Technical Field】 【0001】 The present invention relates to a method for manufacturing a wafer. 【Background Art】 【0002】 Optical devices such as LEDs (Light Emitting Diodes) are formed, for example, by epitaxially growing an n-type semiconductor layer and a p-type semiconductor layer constituting a pn junction on the surface of a sapphire substrate. In recent years, manufacturing technology for extremely small-sized LEDs called micro LEDs has also been developing, and semiconductor layers are divided by etching to create a large number of LEDs (see, for example, Patent Document 1). 【0003】 A technique called laser lift-off for transferring the thus-formed optical device layer from a sapphire substrate to another transfer substrate is also known, and the optical device layer peeled off from the sapphire substrate is transferred to the transfer substrate via an adhesive layer (see, for example, Patent Document 2). 【0004】 However, if the optical device layer is damaged during intermediate processes such as etching or lift-off, the yield will decrease due to these defective devices. 【0005】 The above problem is not limited to micro LEDs, and the same problem exists, for example, in the manufacturing process of stacked device chips. In the manufacturing process of stacked device chips, a stacked wafer is formed (Wafer on Wafer process) by stacking a plurality of wafers and connecting semiconductor devices included in each wafer with electrodes formed so as to penetrate the stacked wafers (see, for example, Patent Document 3). 【Prior Art Documents】 【Patent Documents】 【0006】 【Patent Document 1】 Japanese Patent Application Laid-Open No. 2018-107421 【Patent Document 2】 Japanese Patent Publication No. 2018-194718 [Patent Document 3] Japanese Patent Publication No. 2003-249620 [Overview of the Initiative] [Problems that the invention aims to solve] 【0007】 The manufacturing method described in Patent Document 3, etc., has a problem in that if a defective device is present in the stacked wafer, a stacked device containing the defective device will be manufactured, resulting in a decrease in the yield of the stacked device. 【0008】 Furthermore, in the manufacturing method described in Patent Document 3, etc., if a bonding defect occurs in a part of the stacked wafer, stacked devices with poor bonding between devices will be manufactured, resulting in a decrease in the yield of stacked devices. 【0009】 Thus, in wafers manufactured by stacking semiconductor devices on a substrate, the yield of stacked devices has traditionally decreased if defective semiconductor devices are stacked or if there are bonding defects between the semiconductor devices. 【0010】 This invention has been made in view of the above facts, and aims to provide a wafer manufacturing method that can suppress a decrease in yield. [Means for solving the problem] 【0011】 To solve the aforementioned problems and achieve the objective , bookThe wafer manufacturing method of the invention comprises: a wafer preparation step of preparing a wafer comprising a plurality of semiconductor devices bonded to a substrate via an adhesive layer; a laser beam irradiation step of determining whether the plurality of semiconductor devices bonded to the substrate are good or bad, and irradiating a laser beam so as to heat the adhesive layer to which semiconductor devices determined to be defective are bonded, thereby melting the adhesive layer corresponding to the area irradiated by the laser beam; and a processing step of processing the semiconductor devices whose adhesive state has been released by the laser beam irradiation step, wherein the processing step is a removal step of removing the semiconductor devices from the substrate, and the removal step is characterized in that, with a containment container large enough to suck up at least one semiconductor device positioned on the semiconductor devices, the laser beam is irradiated through the containment container to release the adhesive state, and gas is supplied to the semiconductor devices whose adhesive strength has decreased from a pressurized gas supply hole formed in the containment container, thereby causing the semiconductor devices to float away from the substrate surface. 【0012】 In the wafer manufacturing method described above, the laser beam may be irradiated onto the adhesive layer via the semiconductor device. 【0013】 In the wafer manufacturing method described above, the processing step may also be a rebonding step in which the semiconductor device is rebonded to the substrate. 【0014】 In the wafer manufacturing method described above, the processing step may also be a removal step of removing the semiconductor device from the substrate. 【0015】 This invention Wafer manufacturing method This is a method for manufacturing a wafer, comprising a wafer preparation step of preparing a wafer comprising a plurality of semiconductor devices bonded to a substrate via an adhesive layer, The process includes: a laser beam irradiation step to determine the quality of a plurality of semiconductor devices bonded to the substrate, and to irradiate the adhesive layer to which a semiconductor device determined to be defective is bonded with a laser beam so as to heat and melt the adhesive layer corresponding to the area irradiated by the laser beam; and a processing step to process the semiconductor device whose adhesive layer has melted and whose bonded state has been released by the laser beam irradiation step, wherein the processing step is a removal step to remove the semiconductor device from the substrate. The removal step includes allowing the semiconductor device on the wafer to free fall downwards. Characterized by . 【0016】 In the method for manufacturing the wafer, in the removal step, the semiconductor device may be recovered by injecting a gas against the semiconductor device that has fallen by free fall. 【0017】 In the method for manufacturing the wafer, the removal step , floating may include removing the semiconductor device from the substrate by sucking the semiconductor device that has been separated as described above. 【0018】 In the method for manufacturing the wafer, after the removal step is performed, a good product adhesion step of adhering a semiconductor device having the same function as the semiconductor device to the region from which the semiconductor device determined to be a defective product has been removed may be further provided. 【Advantages of the Invention】 【0019】 The present invention has an effect that it is possible to suppress a decrease in yield. 【Brief Description of the Drawings】 【0020】 [Figure 1] FIG. 1 is a perspective view schematically showing a wafer to be processed in the method for manufacturing a wafer according to Embodiment 1. [Figure 2] FIG. 2 is a cross-sectional view schematically showing the wafer shown in FIG. 1. [Figure 3] FIG. 3 is a plan view schematically showing a main part of the wafer shown in FIG. 2. [Figure 4] FIG. 4 is a flowchart showing the flow of the method for manufacturing a wafer according to Embodiment 1. [Figure 5] FIG. 5 is a cross-sectional view schematically showing the wafer prepared in the wafer preparation step of the method for manufacturing a wafer shown in FIG. 4. [Figure 6] FIG. 6 is a side view schematically showing a part of the laser beam irradiation step of the method for manufacturing a wafer shown in FIG. 4 in a partial cross section. [Figure 7] FIG. 7 is a cross-sectional view schematically showing the removal step of the method for manufacturing a wafer shown in FIG. 4. [Figure 8] Figure 8 is a schematic perspective view of a wafer illustrating the good product bonding step of the wafer manufacturing method shown in Figure 4. [Figure 9] Figure 9 is a schematic side view showing a partial cross-section of the good product bonding step in the wafer manufacturing method shown in Figure 4. [Figure 10] Figure 10 is a schematic side view showing a partial cross-section of a modified example 1 of the laser beam irradiation step of the wafer manufacturing method according to Embodiment 1 shown in Figure 6. [Figure 11] Figure 11 is a schematic side view showing a partial cross-section of a modified example 2 of the laser beam irradiation step of the wafer manufacturing method according to Embodiment 1 shown in Figure 6. [Figure 12] Figure 12 is a schematic side view showing a partial cross-section of a modified example 3 of the laser beam irradiation step of the wafer manufacturing method according to Embodiment 1 shown in Figure 6. [Figure 13] Figure 13 is a schematic cross-sectional view showing a modified example 1 of the removal step of the wafer manufacturing method according to Embodiment 1 shown in Figure 7. [Figure 14] Figure 14 is a schematic cross-sectional view showing a modified example 2 of the removal step of the wafer manufacturing method according to Embodiment 1 shown in Figure 7. [Figure 15] Figure 15 is a schematic cross-sectional view showing the state after the semiconductor device has been removed in the removal step shown in Figure 14. [Figure 16] Figure 16 is a flowchart showing the flow of the wafer manufacturing method according to Embodiment 2. [Figure 17] Figure 17 is a schematic side view showing a partial cross-section of the laser beam irradiation rejoining step of the wafer manufacturing method shown in Figure 16. [Figure 18] Figure 18 is a schematic side view showing, in partial cross-section, the good product bonding step and the laser beam irradiation rebonding step of the wafer manufacturing method according to a modified example 1 of Embodiment 1 and Embodiment 2. [Figure 19]Figure 19 is a schematic side view showing, in partial cross-section, the good product bonding step and the laser beam irradiation rebonding step of the wafer manufacturing method according to a modified example 2 of Embodiment 1 and Embodiment 2. [Figure 20] Figure 20 is a schematic side view showing, in partial cross-section, the good product bonding step and the laser beam irradiation rebonding step of the wafer manufacturing method according to Embodiment 1 and Modification 3 of Embodiment 2. [Modes for carrying out the invention] 【0021】 Embodiments for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by those skilled in the art, and those that are substantially the same. In addition, the components described below can be combined as appropriate. Furthermore, various omissions, substitutions, or modifications of the components can be made without departing from the spirit of the present invention. 【0022】 [Embodiment 1] A wafer manufacturing method according to Embodiment 1 of the present invention will be described based on the drawings. Figure 1 is a schematic perspective view showing the wafer to be processed in the wafer manufacturing method according to Embodiment 1. Figure 2 is a schematic cross-sectional view showing the wafer shown in Figure 1. Figure 3 is a schematic plan view showing the main parts of the wafer shown in Figure 2. Figure 4 is a flowchart showing the flow of the wafer manufacturing method according to Embodiment 1. 【0023】 (Waha) The wafer manufacturing method according to Embodiment 1 is the wafer manufacturing method shown in Figures 1 and 2. The wafer 1 to be processed by the manufacturing method according to Embodiment 1 comprises a substrate wafer 2 (corresponding to a substrate) and a plurality of semiconductor devices 3 bonded to the substrate wafer 2. The substrate wafer 2 is a disc-shaped semiconductor wafer made of silicon, gallium arsenide, or SiC (silicon carbide), etc. The substrate wafer 2 has a plurality of intersecting division lines 5 set on its surface 4, and devices 6 are formed in each region partitioned in a grid pattern by the division lines 5 on the surface 4. 【0024】 Device 6 is, for example, an integrated circuit such as an IC (Integrated Circuit) or LSI (Large Scale Integration), or a memory (semiconductor memory device). The substrate wafer 2 has a notch 7 formed on its outer edge, which is an irregularly shaped portion indicating the crystal orientation. 【0025】 The semiconductor device 3 is bonded to the device 6 on the substrate wafer 2 via an adhesive layer 10. Note that Figure 1 omits the semiconductor device 3. The semiconductor device 3 is a chip that includes an integrated circuit such as an IC (Integrated Circuit) or LSI (Large Scale Integration) as described above, or a device such as a memory (semiconductor memory device). 【0026】 That is, wafer 1 comprises a plurality of semiconductor devices 3 bonded to devices 6 on a substrate wafer 2 via an adhesive layer 10. In Embodiment 1, the adhesive layer 10 electrically connects the electrodes of devices 6 on the substrate wafer 2 to the electrodes of semiconductor devices 3, but in the present invention, the substrate wafer and the semiconductor devices may be fixed to each other by a resin layer. 【0027】 The semiconductor device 3 is formed by laminating a second substrate wafer, which has grooves formed between the devices on its surface and has the same configuration as the substrate wafer 2, onto the substrate wafer 2 with an adhesive layer 10. After that, the second substrate wafer is thinned by grinding, polishing, etc., until the grooves are exposed on the back surface of the second substrate wafer, and then individually separated while bonded to the devices 6 of the substrate wafer 2 via the adhesive layer 10. In this way, the semiconductor device 3 is bonded to each device 6 of the substrate wafer 2 by the adhesive layer 10 in its individually separated state. 【0028】 The semiconductor device 3 may be bonded to the substrate wafer 2 in two ways: good devices with proper functioning and defective devices with faulty circuits or other defects. The quality of the semiconductor device 3 is determined by applying a metal probe to the electrodes of each device on the second substrate wafer before bonding to the substrate wafer 2, measuring the electrical characteristics of the device, and determining whether the measured electrical characteristics meet predetermined standards. For this reason, the wafer 1 to which the semiconductor device 3 is bonded has the locations of the good semiconductor device 3 and the defective semiconductor device 3 known in advance by measuring the electrical characteristics of the devices on the second substrate wafer as described above. The location of each semiconductor device 3 is determined, for example, based on a notch 7. 【0029】 Furthermore, in Embodiment 1, as shown in Figure 3, the wafer 1 has electrodes 8 around the semiconductor device 3 bonded by the adhesive layer 10. The electrodes 8 are made of a conductive metal and are placed on the substrate. The electrodes 8 are electrically connected to each other according to a predetermined pattern and are also electrically connected to the area where the semiconductor device 3 is placed. In Embodiment 1, the wafer 1 has electrodes 8 around the semiconductor device 3, but in the present invention, the electrodes 8 do not need to be provided. The wafer 1 is divided into individual stacked device chips 11 (shown in Figure 2) along the division line 5. The stacked device chip 11 includes a part of the substrate of the substrate wafer 2, a device 6, the adhesive layer 10, and the semiconductor device 3. 【0030】 (Wafer manufacturing method) As shown in Figure 4, the wafer manufacturing method according to Embodiment 1 comprises a wafer preparation step 101, a quality determination step 102, a laser beam irradiation step 103, a processing step which is a removal step 104, and a good product bonding step 105. 【0031】 (Wafer preparation step) Figure 5 is a schematic cross-sectional view showing the wafer prepared in the wafer preparation step of the wafer manufacturing method shown in Figure 4. The wafer preparation step 101 is a step in which wafer 1 having the configuration described above is prepared. 【0032】 In Embodiment 1, in wafer preparation step 101, as shown in Figure 5, a disc-shaped tape 12 with a larger diameter than the wafer 1 is attached to the back surface 9 of the back surface 4 of the wafer 1, and an annular frame 13 is attached to the outer edge of the tape 12 to prepare the wafer 1. 【0033】 (Proper / Positive Determination Step) Step 102 is a step to determine the quality of the multiple semiconductor devices 3 bonded to the substrate wafer 2. In Embodiment 1, the condition of the semiconductor device 3 is determined by whether the semiconductor device 3 itself is good or defective. 【0034】 In Embodiment 1, the quality determination step 102 determines the quality of each semiconductor device 3 bonded to the substrate wafer 2 in a predetermined order. In Embodiment 1, the quality determination step 102 determines the quality of one semiconductor device 3 to be determined based on the predetermined locations of good semiconductor devices 3 and defective semiconductor devices 3. In Embodiment 1, if the quality determination step 102 determines that one semiconductor device 3 to be determined is not good (quality determination step 102: No), that is, that one semiconductor device 3 to be determined is defective, the process proceeds to the laser beam irradiation step 103. 【0035】 (Laser beam irradiation step) Figure 6 is a schematic side view showing a partial cross-section of the laser beam irradiation step of the wafer manufacturing method shown in Figure 4. In the laser beam irradiation step 103, the laser processing apparatus 20 shown in Figure 6 irradiates the adhesive layer 10 to which the semiconductor device 3 (hereinafter referred to as reference numeral 3-1), which was determined to be in a poor condition (defective product in Embodiment 1) in the quality determination step 102, is attached, with a laser beam 21 to melt the adhesive layer 10 corresponding to the area of ​​the laser beam 21 that is irradiated. 【0036】 In Embodiment 1, during the laser beam irradiation step 103, the laser processing apparatus 20 clamps the annular frame 13 and the outer edge of the tape 12 with the clamping portion 22 so that the surface 4 of the wafer 1 faces downward, as shown in Figure 6. In Embodiment 1, during the laser beam irradiation step 103, the laser processing apparatus 20 positions the imaging lens 231 of the laser beam irradiation unit 23, located below the wafer 1 with the annular frame 13 clamped by the clamping portion 22, to face the semiconductor device 3-1, which was determined to be defective in the quality determination step 102, along the optical axis of the laser beam 21 irradiated by the laser beam irradiation unit 23. 【0037】 In Embodiment 1, in the laser beam irradiation step 103, the laser processing apparatus 20 emits a laser beam 21 with a wavelength that is absorbed by the substrate wafer 2 and semiconductor device 3 from the laser oscillator 232 of the laser beam irradiation unit 23, reflects the laser beam 21 emitted from the laser oscillator 232 toward the imaging lens 231 by the mirror 233, and forms an image of the laser beam 21 with the imaging lens 231 and irradiates the semiconductor device 3-1, which was determined to be defective in the quality determination step 102, for a predetermined time. 【0038】 In Embodiment 1, during the laser beam irradiation step 103, the laser processing apparatus 20 focuses the laser beam 21 onto the entire surface of the semiconductor device 3-1, which was determined to be defective in the quality determination step 102, using the imaging lens 231. In Embodiment 1, the area irradiated by the laser beam 21 is the entire surface of the semiconductor device 3-1, which was determined to be defective in the quality determination step 102. As a result, the semiconductor device 3-1, which was determined to be defective in the quality determination step 102, is heated, and the adhesive layer 10 that fixes the semiconductor device 3-1, which was determined to be defective in the quality determination step 102, melts. 【0039】 Thus, in Embodiment 1, the laser beam 21 is irradiated onto the semiconductor device 3-1, heating the semiconductor device 3-1 and thereby heating and melting the adhesive layer 10. The fact that the laser beam 21 is irradiated onto the semiconductor device 3-1 and heats the semiconductor device 3-1, thereby heating and melting the adhesive layer 10, is equivalent to the laser beam 21 being irradiated onto the adhesive layer 10 via the semiconductor device 3-1. 【0040】 In Embodiment 1, it is desirable that the intensity (also called the laser power density) of the laser beam 21 irradiated in the laser beam irradiation step 103, and the predetermined time for irradiation with the laser beam 21, be such that the adhesive layer 10 can be melted without damaging the semiconductor device 3-1 and device 6. 【0041】 (Removal step) Figure 7 is a schematic cross-sectional view showing the removal step of the wafer manufacturing method shown in Figure 4. Removal step 104 is the step of removing the semiconductor device 3-1 from the device 6 on the substrate wafer 2. Removal step 104 is also a processing step in which the adhesive layer 10 has melted and the adhesive state of the semiconductor device 3-1 has been released by the laser beam irradiation step 103. For this reason, in Embodiment 1, processing means removing the semiconductor device 3-1. 【0042】 In Embodiment 1, in the removal step 104, the adhesive strength of the adhesive layer 10 that melted in the laser beam irradiation step 103 decreases, and as shown in Figure 7, the semiconductor device 3 detaches from the wafer 1 due to its own weight and falls downward in free fall. Thus, in Embodiment 1, the removal step 104 causes the semiconductor device 3 to fall downward from the wafer 1 in free fall. In Embodiment 1, the release of the adhesive state means that the adhesive strength of the adhesive layer 10 becomes less than the force that causes the semiconductor device 3 to fall in free fall due to its own weight. 【0043】 (Good product bonding step) Figure 8 is a schematic perspective view of a wafer showing the good product bonding step of the wafer manufacturing method shown in Figure 4. Figure 9 is a schematic side view showing a partial cross-section of the good product bonding step of the wafer manufacturing method shown in Figure 4. 【0044】 The good product bonding step 105 is a step in which, after performing the removal step 104, a good semiconductor device 3 (hereinafter referred to as reference numeral 3-2), which has the same function as semiconductor device 3-1, is bonded to the area from which the semiconductor device 3-1, which was determined to be defective in the quality determination step 102, was removed. In the good product bonding step 105, the good semiconductor device 3-2 shown in Figure 8 is placed on the adhesive layer 10 of the area from which the semiconductor device 3-1 of the wafer 1 was removed in the removal step 104, and as shown in Figure 9, the laser processing apparatus 20 presses the semiconductor device 3 toward the substrate wafer 2 with a flat pressing member 30 while irradiating the semiconductor device 3 with a laser beam 21 through the pressing member 30 for a predetermined time. The pressing member 30 is made of a material that transmits the laser beam 21 (for example, quartz glass). 【0045】 As a result, the semiconductor device 3 is heated, and the adhesive layer 10 from which the semiconductor device 3-1 was removed in the removal step 104 melts. In the good product bonding step 105, the semiconductor device 3 is pressed toward the substrate wafer 2 by the pressing member 30, so the adhesive layer 10 adheres closely to the semiconductor device 3-1. Also, the irradiation of the laser beam 21 is stopped, the temperature of the adhesive layer 10 decreases, the adhesive layer 10 solidifies, and the semiconductor device 3-1 is bonded to the substrate wafer 2. 【0046】 In Embodiment 1, the area irradiated by the laser beam 21 in the good product bonding step 105, the intensity of the laser beam 21 (also called the laser power density), and the predetermined time for irradiating with the laser beam 21 are preferably values ​​that allow the adhesive layer 10 to melt without damaging the semiconductor device 3-2 and device 6, similar to the removal step 104. 【0047】 After the good product bonding step 105, the wafer manufacturing method according to Embodiment 1 proceeds to step 106. Furthermore, in the wafer manufacturing method according to Embodiment 1, if in the good / bad determination step 102 it is determined that one of the semiconductor devices 3 to be determined is good (good / bad determination step 102: Yes), that is, if it is determined that one of the semiconductor devices 3 to be determined is a good product, the process proceeds to step 106. 【0048】 Step 106 determines whether the quality of all semiconductor devices 3 on wafer 1 has been determined. If it is determined that the quality of all semiconductor devices 3 on wafer 1 has not been determined (Step 106: No), the process returns to quality determination step 102 to determine the quality of the next semiconductor device 3 to be determined. If it is determined that the quality of all semiconductor devices 3 on wafer 1 has been determined (Step 106: Yes), the wafer manufacturing method according to Embodiment 1 is terminated. 【0049】 Thus, the wafer manufacturing method according to Embodiment 1 sequentially determines the quality of each of the multiple semiconductor devices 3 bonded to the wafer 1, performs a laser beam irradiation step 103 and a removal step 104 on any defective semiconductor devices 3, and in the good product bonding step 105, bonds the semiconductor devices 3 in good condition to the wafer 1. 【0050】 In the wafer manufacturing method according to Embodiment 1 described above, in the laser beam irradiation step 103, the adhesive layer 10 to which the defective semiconductor device 3-1 is joined is melted to reduce the adhesive strength, and in the removal step 104, the semiconductor device 3-1 is removed by free fall. 【0051】 Therefore, the wafer manufacturing method according to Embodiment 1 can manufacture wafers 1 that do not have defective semiconductor devices 3-1. As a result, the wafer manufacturing method according to Embodiment 1 has the effect of suppressing a decrease in the yield of stacked device chips 11. 【0052】 Furthermore, the wafer manufacturing method according to Embodiment 1 has the effect of preventing a decrease in the material yield of the stacked device chip 11 and contributing to improved productivity, because in the good product bonding step 105, a good semiconductor device 3-2 is bonded to the area from which a defective semiconductor device 3-1 has been removed. 【0053】 [Modification example 1 of the laser beam irradiation step] A modified example 1 of the laser beam irradiation step of the wafer manufacturing method according to Embodiment 1 will be described. Figure 10 is a schematic side view showing a partial cross-section of modified example 1 of the laser beam irradiation step of the wafer manufacturing method according to Embodiment 1 shown in Figure 6. In Figure 10, the same reference numerals are used for parts that are the same as in Embodiment 1, and their descriptions are omitted. 【0054】 Modification 1 of the laser beam irradiation step 103 is the same as Embodiment 1 except that the laser beam 21 is irradiated onto the semiconductor device 3 through the tape 12 and the substrate wafer 2. In Modification 1 of the laser beam irradiation step 103, the laser processing apparatus 20 clamps the annular frame 13 and the outer edge of the tape 12 with the clamping part 22 so that the surface 4 of the wafer 1 faces downward, as shown in Figure 10. 【0055】 In the first modified example of the laser beam irradiation step 103, the laser processing apparatus 20 positions the imaging lens 231 of the laser beam irradiation unit 23, which is located above the wafer 1 in which the annular frame 13 is clamped by the clamping portion 22, to face the semiconductor device 3-1, which was determined to be defective in the quality determination step 102, along the optical axis of the laser beam 21 irradiated by the laser beam irradiation unit 23. 【0056】 In the first modified example of the laser beam irradiation step 103, the laser processing apparatus 20 emits a laser beam 21 from the laser oscillator 232 of the laser beam irradiation unit 23, reflects the laser beam 21 towards the imaging lens 231 using a mirror 233, and the imaging lens 231 forms an image of the laser beam 21, which is then irradiated onto the semiconductor device 3-1 through the tape 12 and substrate wafer 2 for a predetermined time. Then, similar to the first embodiment, the semiconductor device 3-1 that was determined to be defective in the quality determination step 102 is heated, the adhesive layer 10 that fixes the semiconductor device 3-1 that was determined to be defective in the quality determination step 102 melts, and the adhesive strength decreases. 【0057】 [Modification of the laser beam irradiation step 2] A modified example 2 of the laser beam irradiation step of the wafer manufacturing method according to Embodiment 1 will be described. Figure 11 is a schematic side view showing a partial cross-section of modified example 2 of the laser beam irradiation step of the wafer manufacturing method according to Embodiment 1 shown in Figure 6. In Figure 11, the same reference numerals are used for parts that are the same as in Embodiment 1, and their descriptions are omitted. 【0058】 Modification 2 of the laser beam irradiation step 103 is the same as Embodiment 1 except that the back surface 9 of the wafer 1 is held by suction to the holding table 24 via the tape 12, and the laser beam 21 is irradiated onto the semiconductor device 3 on the front surface 4 of the wafer 1. In Modification 2 of the laser beam irradiation step 103, the laser processing apparatus 20 holds the back surface 9 of the wafer 1 by suction to the holding surface 241 of the holding table 24 via the tape 12, as shown in Figure 11, so that the front surface 4 of the wafer 1 is facing upward. 【0059】 In a modified example of the laser beam irradiation step 103, the laser processing apparatus 20 positions the imaging lens 231 of the laser beam irradiation unit 23, which is located above the wafer 1 held by attraction to the holding surface 241 of the holding table 24, to face the semiconductor device 3-1, which was determined to be defective in the quality determination step 102, along the optical axis of the laser beam 21 irradiated by the laser beam irradiation unit 23. 【0060】 In the modified example 2 of the laser beam irradiation step 103, the laser processing apparatus 20 emits a laser beam 21 from the laser oscillator 232 of the laser beam irradiation unit 23, reflects the laser beam 21 toward the imaging lens 231 by the mirror 233, and the imaging lens 231 images the laser beam 21 and irradiates the semiconductor device 3-1 for a predetermined time. Then, similar to embodiment 1, the semiconductor device 3-1 that was determined to be defective in the quality determination step 102 is heated, the adhesive layer 10 that fixes the semiconductor device 3-1 that was determined to be defective in the quality determination step 102 melts, and the adhesive strength decreases. 【0061】 [Modification 3 of the laser beam irradiation step] A third modification of the laser beam irradiation step in the wafer manufacturing method according to Embodiment 1 will be described. Figure 12 is a schematic side view showing a partial cross-section of the third modification of the laser beam irradiation step in the wafer manufacturing method according to Embodiment 1 shown in Figure 6. In Figure 12, the same reference numerals are used for parts that are the same as in Embodiment 1, and their descriptions are omitted. 【0062】 Modification 3 of the laser beam irradiation step 103 is the same as Embodiment 1 except that the clamping portion 22 holds the annular frame 13 and the outer edge of the tape 12 so that the surface 4 of the wafer 1 faces upward, and the laser beam 21 is irradiated onto the semiconductor device 3 through the tape 12 and the substrate wafer 2. In Modification 3 of the laser beam irradiation step 103, the laser processing apparatus 20 holds the annular frame 13 and the outer edge of the tape 12 with the clamping portion 22 so that the surface 4 of the wafer 1 faces upward, as shown in Figure 12. 【0063】 In the third modified example of the laser beam irradiation step 103, the laser processing apparatus 20 positions the imaging lens 231 of the laser beam irradiation unit 23, located below the wafer 1 in which the annular frame 13 is clamped by the clamping portion 22, to face the semiconductor device 3-1, which was determined to be defective in the quality determination step 102, along the optical axis of the laser beam 21 irradiated by the laser beam irradiation unit 23. 【0064】 In the third modified example of the laser beam irradiation step 103, the laser processing apparatus 20 emits a laser beam 21 from the laser oscillator 232 of the laser beam irradiation unit 23, reflects the laser beam 21 towards the imaging lens 231 using a mirror 233, and the imaging lens 231 forms an image of the laser beam 21, which is then irradiated onto the semiconductor device 3-1 through the tape 12 and the substrate wafer 2 for a predetermined time. As a result, similar to the first embodiment, the semiconductor device 3-1 that was determined to be defective in the quality determination step 102 is heated, the adhesive layer 10 that fixes the semiconductor device 3-1 that was determined to be defective in the quality determination step 102 melts, and the adhesive strength decreases. 【0065】 In the modified versions 1, 2, and 3 of the laser beam irradiation step 103, the adhesive layer 10 to which the defective semiconductor device 3-1 is joined is melted to reduce the adhesive strength, and in the removal step 104, the semiconductor device 3-1 is removed. This has the effect of suppressing a decrease in the yield of the stacked device chip 11, similar to Embodiment 1. 【0066】 In addition, in Modifications 1, 2, and 3 of the laser beam irradiation step 103, it is desirable that the irradiated area of ​​the laser beam 21, the intensity of the laser beam 21 (also called the laser power density), and the predetermined time for irradiating with the laser beam 21 are values ​​that allow the adhesive layer 10 to melt without damaging the semiconductor device 3-1 and device 6, similar to Embodiment 1. 【0067】 [Variation 1 of the removal step] A modified example 1 of the removal step of the wafer manufacturing method according to Embodiment 1 will be described. Figure 13 is a schematic cross-sectional view showing a modified example 1 of the removal step of the wafer manufacturing method according to Embodiment 1 shown in Figure 7. In Figure 13, the same reference numerals are used for parts that are the same as in Embodiment 1, and their descriptions are omitted. 【0068】 Modification 1 of removal step 104 is performed after the laser beam irradiation step 103 of Embodiment 1 shown in Figure 6 and Modification 1 of laser beam irradiation step 103 shown in Figure 10. Modification 1 of removal step 104 is a step in which gas 41 is injected onto the semiconductor device 3-1 that has fallen by free fall, thereby recovering the semiconductor device 3 into a recovery box or the like (not shown). 【0069】 In modification 1 of removal step 104, the adhesive strength of the melted adhesive layer 10 in laser beam irradiation step 103 decreases, and as shown in Figure 13, gas 41 is injected from nozzle 40 into the semiconductor device 3-1 that has detached from wafer 1 due to its own weight and is in free fall downward, blowing the semiconductor device 3 to a recovery box (not shown) and collecting it inside the recovery box. 【0070】 [Variation 2 of the removal step] A modified example 2 of the removal step of the wafer manufacturing method according to Embodiment 1 will be described. Figure 14 is a schematic cross-sectional view showing a modified example 2 of the removal step of the wafer manufacturing method according to Embodiment 1 shown in Figure 7. Figure 15 is a schematic cross-sectional view showing the state after the semiconductor device has been removed in the removal step shown in Figure 14. In Figures 14 and 15, the same reference numerals are used for parts that are the same as in Embodiment 1, and their descriptions are omitted. 【0071】 Modification 2 of removal step 104 is performed after Modification 2 of laser beam irradiation step 103 shown in Figure 11 and Modification 3 of laser beam irradiation step 103 shown in Figure 12. Modification 2 of removal step 104 is performed using the removal unit 50 shown in Figure 14 while performing laser beam irradiation step 103. 【0072】 The removal unit 50 removes semiconductor devices 3 from wafers 1 with their surfaces 4 facing upward. The removal unit 50 includes a containment container 51 and a suction blow mechanism 52 connected to the containment container 51. The containment container 51 is a box-shaped container with an upper wall 511 and a plurality of side walls 512 extending downward from the outer edge of the upper wall 511, with an opening at the bottom. The planar shape of the upper wall 511 of the containment container 51 is the same size as the planar shape of the plurality of semiconductor devices 3 combined. In this invention, the planar shape of the upper wall 511 of the containment container 51 may be circular or rectangular; in short, any shape is acceptable. Furthermore, in this invention, the size of the planar shape of the upper wall 511 of the containment container 51 only needs to be large enough to suck up at least one semiconductor device 3. 【0073】 The upper wall 511 of the containment container 51 is provided with a glass window 513 made of glass or the like that allows the laser beam 21 to pass through. The containment container 51 is positioned so that the opening between the side walls 512 is close to the semiconductor device 3-1. The containment container 51 allows the laser beam 21 to be irradiated onto the semiconductor device 3 through the glass window 513. 【0074】 One side wall 512 of the containment container 51 is provided with a pressurized gas supply hole 514, which is connected to a pressurized gas supply source (not shown) and blows pressurized gas 53 (equivalent to gas) onto the semiconductor device 3-1, which is irradiated with a laser beam 21 through a glass window 513. The pressurized gas supply hole 514 injects pressurized gas 53 onto the semiconductor device 3-1, causing the adhesive strength of the adhesive layer 10 to decrease, thereby lifting the semiconductor device 3-1 from the surface 4 of the substrate wafer 2. 【0075】 The suction blow mechanism 52 sucks air from inside the containment container 51 and supplies pressurized gas 54 (shown in Figure 15) into the containment container 51. In the modified example 2, the suction blow mechanism 52 is an ejector comprising, for example, a supply port 521 connected to a side wall 512 of the containment container 51 opposite to the side wall 512 where the pressurized gas supply hole 514 is provided, an exhaust port 522 linearly connected to the supply port 521, and a vacuum port 523 connected between the supply port 521 and the exhaust port 522, which supplies pressurized gas 54 from a pressurized gas supply source (not shown) toward the exhaust port 522. The suction blow mechanism 52 flows the pressurized gas 54 from the pressurized gas supply source supplied to the vacuum port 523 toward the exhaust port 522, thereby sucking air from inside the supply port 521. 【0076】 In the second modification of removal step 104, the suction blow mechanism 52 includes a filter 524 that removes foreign matter entering the supply port 521 and allows gas to flow, and an opening / closing means 525 (shown in Figure 15) that opens and closes the flow path in the exhaust port 522. In addition, in the second modification of removal step 104, the flow paths inside the supply port 521 and exhaust port 522 of the suction blow mechanism 52 are formed to be too small for the semiconductor device 3 to pass through. 【0077】 In the second modification of removal step 104, as shown in Figure 14, the housing container 51 of the removal unit 50 is positioned with the opening of the side wall 512 close to the semiconductor device 3-1. In the second modification of removal step 104, pressurized gas 53 is injected onto the semiconductor device 3-1 through the pressurized gas supply hole 514, and the suction blow mechanism 52 opens the opening / closing means 525 to draw in the supply port 521 with pressurized gas 54 from the pressurized gas supply source, while the laser beam 21 is irradiated onto the semiconductor device 3-1 through the glass window 513, similar to embodiment 1 and others. 【0078】 In modification 2 of removal step 104, pressurized gas 53 is injected onto the semiconductor device 3-1 from which the adhesive state has been released, causing the semiconductor device 3-1 to float away from the surface 4 of the substrate wafer 2. The semiconductor device 3-1 that has floated to the inner surface of the side wall 512 to which the supply port 521 is connected is then sucked and held, thereby removing the semiconductor device 3-1 from the wafer 1. In modification 2 of removal step 104, "release of the adhesive state" means that the adhesive force of the adhesive layer 10 is less than the sum of the force exerted by blowing pressurized gas 53 through the pressurized gas supply hole 514 to lift the semiconductor device 3 and the force exerted by the suction blow mechanism 52. 【0079】 In Modification 2 of the removal step 104, after irradiating with the laser beam 21 for a predetermined time in the laser beam irradiation step 103, the containment container 51, which holds the semiconductor device 3-1 by suction to the inner surface of the side wall 512 of the removal unit 50, is positioned above a recovery box (not shown). In Modification 2 of the removal step 104, the exhaust port 522 is then closed by the opening / closing means 525, as shown in Figure 15, and pressurized gas 54 supplied from the vacuum port 523 is supplied into the containment container 51 from the supply port 521, causing the semiconductor device 3-1 in the containment container 51 to detach from the side wall 512 and be recovered into the recovery box. 【0080】 In addition, in the modified example 2 of removal step 104, the removal unit 50 may be configured such that, without the filter 524, the flow paths inside the supply port 521 and exhaust port 522 of the suction blow mechanism 52 are large enough to allow the semiconductor device 3-1 to pass through. 【0081】 In the modified versions 1 and 2 of removal step 104, the adhesive layer 10 to which the defective semiconductor device 3-1 is joined is melted to reduce the adhesive strength, and the semiconductor device 3-1 is removed in removal step 104. This has the effect of suppressing a decrease in the yield of the stacked device chip 11, similar to embodiment 1. 【0082】 [Embodiment 2] A wafer manufacturing method according to Embodiment 2 will be described based on the drawings. Figure 16 is a flowchart showing the flow of the wafer manufacturing method according to Embodiment 2. Figure 17 is a schematic side view showing a partial cross-section of the laser beam irradiation rebonding step of the wafer manufacturing method shown in Figure 16. Note that Figures 16 and 17 use the same reference numerals as Embodiment 1 for the same parts and their descriptions are omitted. 【0083】 The wafer manufacturing method according to Embodiment 2 is the same as Embodiment 1, except that the quality determination step 102 is different, and a laser beam irradiation re-bonding step 110 is included instead of the laser beam irradiation step 103, the removal step 104, and the good product bonding step 105, as shown in Figure 16. 【0084】 In Embodiment 2, the quality determination step 102 determines the quality of the semiconductor device 3, specifically whether the bonding state of the semiconductor device 3 to the substrate wafer 2 is good or bad. In Embodiment 2, the quality determination step 102 determines the quality of the bonding state of the semiconductor device 3 to the substrate wafer 2 by checking whether the electrical resistance value between predetermined electrodes 8 around each semiconductor device 3 is within a desired range. 【0085】 The desired range is a range that includes the predetermined electrical resistance values ​​between electrodes 8 when the bonding state of the semiconductor device 3 to the substrate wafer 2 is good. In Embodiment 2, in the good / bad determination step 102, if the electrical resistance values ​​between the predetermined electrodes 8 around each semiconductor device 3 are within the desired range, it is determined that the bonding state of the semiconductor device 3 to the substrate wafer 2 is good, and if they are outside the desired range, it is determined that the bonding state is poor. 【0086】 In Embodiment 2, if the quality determination step 102 determines that the bonding state of one of the semiconductor devices 3 to be determined is not good (quality determination step 102: No), that is, if the bonding state of one of the semiconductor devices 3 to be determined is poor, the process proceeds to the laser beam irradiation rebonding step 110. 【0087】 The laser beam irradiation rebonding step 110 is a laser beam irradiation step in which the laser processing apparatus 20 shown in Figure 17 irradiates the adhesive layer 10 to which the semiconductor device 3 (hereinafter referred to as reference numeral 3-3), which was determined to have a poor bond state in the quality determination step 102, is bonded, with a laser beam 21 to melt the adhesive layer 10 corresponding to the irradiated area of ​​the laser beam 21. The laser beam irradiation rebonding step 110 is also a rebonding step in which the semiconductor device 3-3 is rebonded to the device 6 of the substrate wafer 2. Furthermore, the laser beam irradiation rebonding step 110 is also a processing step in which the semiconductor device 3, whose bond state has been released due to the melting of the adhesive layer 10 by the laser beam irradiation step, is processed. For this reason, in Embodiment 2, the processing is the rebonding of the semiconductor device 3-3. 【0088】 In Embodiment 2, during the laser beam irradiation rebonding step 110, the laser processing apparatus 20 clamps the annular frame 13 and the outer edge of the tape 12 with the clamping part 22 so that the surface 4 of the wafer 1 faces downward, as shown in Figure 17, and presses the semiconductor device 3-3 toward the substrate wafer 2 with the pressing member 30. In Embodiment 2, during the laser beam irradiation rebonding step 110, the laser processing apparatus 20 positions the imaging lens 231 of the laser beam irradiation unit 23, located below the wafer 1 where the annular frame 13 is clamped by the clamping part 22, to face the semiconductor device 3-3, which was determined to be defective in the quality determination step 102, along the optical axis of the laser beam 21 irradiated by the laser beam irradiation unit 23. 【0089】 In Embodiment 2, in the laser beam irradiation rejoining step 110, the laser processing apparatus 20 emits a laser beam 21 with a wavelength that is absorbed by the substrate wafer 2 and semiconductor device 3 from the laser oscillator 232 of the laser beam irradiation unit 23, reflects the laser beam 21 emitted from the laser oscillator 232 toward the imaging lens 231 by the mirror 233, and images the laser beam 21 with the imaging lens 231 and irradiates the semiconductor device 3-3, which was determined to be defective in the quality determination step 102, for a predetermined time. 【0090】 Then, the semiconductor device 3-3 that was determined to be defective in the quality determination step 102 is heated, and the adhesive layer 10 that fixes the semiconductor device 3-3 that was determined to be defective in the quality determination step 102 melts. In Embodiment 2, in the laser beam irradiation rebonding step 110, the semiconductor device 3-3 is pressed toward the substrate wafer 2 by the pressing member 30, so the adhesive layer 10 adheres closely to the semiconductor device 3-3. Also, when the irradiation of the laser beam 21 is stopped, the temperature of the adhesive layer 10 decreases, the adhesive layer 10 solidifies, and the semiconductor device 3-3 is rebonded to the substrate wafer 2. After the laser beam irradiation rebonding step 110, the wafer manufacturing method according to Embodiment 2 proceeds to step 106. 【0091】 Furthermore, the irradiated area of ​​the laser beam 21, the intensity of the laser beam 21 (also called the laser power density), and the predetermined time for irradiating with the laser beam 21 in the laser beam irradiation rejoining step 110 are preferably values ​​that allow the adhesive layer 10 to melt without damaging the semiconductor devices 3-3 and device 6, similar to the laser beam irradiation step 103 in Embodiment 1 and the like. 【0092】 In the wafer manufacturing method according to Embodiment 2, in the laser beam irradiation rebonding step 110, the adhesive layer 10 to which the defective semiconductor devices 3-3 are bonded is melted to rebond the semiconductor devices 3-3 to the substrate wafer 2. As a result, the wafer manufacturing method according to Embodiment 2 has the effect of being able to manufacture wafers 1 that do not have defective semiconductor devices 3-3, thereby suppressing a decrease in the yield of the stacked device chip 11. 【0093】 [Variation 1] A wafer manufacturing method according to Modification 1 of Embodiments 1 and 2 will be described based on the drawings. Figure 18 is a schematic side view showing the good product bonding step and the laser beam irradiation rebonding step of the wafer manufacturing method according to Modification 1 of Embodiments 1 and 2 in a partial cross-section. Note that in Figure 18, the same reference numerals are used for the same parts as in Embodiments 1 and 2, etc., and their descriptions are omitted. 【0094】 Modification 1 is the same as Embodiment 1 and Embodiment 2, except that the laser beam 21 is irradiated onto the semiconductor devices 3-2 and 3-3 through the tape 12 and the substrate wafer 2. In Modification 1, the laser processing apparatus 20 clamps the annular frame 13 and the outer edge of the tape 12 with the clamping part 22 so that the surface 4 of the wafer 1 faces downward, as shown in Figure 18. 【0095】 In Modification 1, the laser processing apparatus 20 positions the imaging lens 231 of the laser beam irradiation unit 23, located above the wafer 1 in which the annular frame 13 is clamped by the clamping portion 22, so that it faces the semiconductor devices 3-2, 3-3 along the optical axis of the laser beam 21 irradiated by the laser beam irradiation unit 23. In Modification 1, the laser processing apparatus 20 presses the semiconductor device 3 against the substrate wafer 2 with the pressing member 30, emits a laser beam 21 from the laser oscillator 232 of the laser beam irradiation unit 23, reflects the laser beam 21 towards the imaging lens 231 using the mirror 233, focuses the laser beam 21 onto the semiconductor devices 3-2, 3-3 through the tape 12 and the substrate wafer 2 using the imaging lens 231, irradiates them for a predetermined time, and bonds the semiconductor devices 3-2, 3-3 to the substrate wafer 2, similar to Embodiment 1 and Embodiment 2. 【0096】 The wafer manufacturing method according to Modification 1 involves melting the adhesive layer 10 to bond the semiconductor devices 3-2 and 3-3 to the substrate wafer 2. This allows for the manufacture of a wafer 1 that does not have any defective semiconductor devices 3-1 and 3-3, similar to Embodiment 1, and has the effect of suppressing a decrease in the yield of the stacked device chip 11. 【0097】 [Variation 2] A wafer manufacturing method according to a modified example 2 of Embodiments 1 and 2 will be described based on the drawings. Figure 19 is a schematic side view showing the good product bonding step and the laser beam irradiation rebonding step of the wafer manufacturing method according to a modified example 2 of Embodiments 1 and 2 in a partial cross-section. Note that in Figure 19, the same reference numerals are used for the same parts as in Embodiments 1 and 2, etc., and their descriptions are omitted. 【0098】 Modification 2 is the same as Embodiment 1 and Embodiment 2, except that the back surface 9 of the wafer 1 is held by suction to the holding table 24 via the tape 12, and the laser beam 21 is irradiated onto the semiconductor devices 3-2 and 3-3 on the front surface 4 of the wafer 1. In Modification 2, as shown in Figure 19, the laser processing apparatus 20 holds the back surface 9 of the wafer 1 by suction to the holding surface 241 of the holding table 24 via the tape 12 so that the front surface 4 of the wafer 1 faces upward. 【0099】 In Modification 2, the laser processing apparatus 20 positions the imaging lens 231 of the laser beam irradiation unit 23, located above the wafer 1 which is held by attraction to the holding surface 241 of the holding table 24, so that the imaging lens 231 of the laser beam irradiation unit 23 faces the semiconductor devices 3-2, 3-3 along the optical axis of the laser beam 21 irradiated by the laser beam irradiation unit 23. In Modification 2, the laser processing apparatus 20 presses the semiconductor device 3 against the substrate wafer 2 with the pressing member 30, emits the laser beam 21 from the laser oscillator 232 of the laser beam irradiation unit 23, reflects the laser beam 21 towards the imaging lens 231 by the mirror 233, focuses the laser beam 21 onto the semiconductor devices 3-2, 3-3 by the imaging lens 231 and irradiates them for a predetermined time, bonding the semiconductor devices 3-2, 3-3 to the substrate wafer 2 in the same manner as in Embodiment 1 and Embodiment 2. 【0100】 The wafer manufacturing method according to the modified example 2 involves melting the adhesive layer 10 to bond the semiconductor devices 3-2 and 3-3 to the substrate wafer 2. This allows for the manufacture of a wafer 1 that does not have any defective semiconductor devices 3-1 and 3-3, similar to Embodiment 1, and has the effect of suppressing a decrease in the yield of the stacked device chip 11. 【0101】 [Example 3] A wafer manufacturing method according to a modified example 3 of Embodiments 1 and 2 will be described based on the drawings. Figure 20 is a schematic side view showing the good product bonding step and the laser beam irradiation rebonding step of the wafer manufacturing method according to a modified example 3 of Embodiments 1 and 2 in a partial cross-section. Note that in Figure 20, the same reference numerals are used for the same parts as in Embodiments 1 and 2, etc., and their descriptions are omitted. 【0102】 Modification 3 is the same as Embodiment 1 and Embodiment 2, except that the clamping portion 22 clamps the annular frame 13 and the outer edge of the tape 12 so that the surface 4 of the wafer 1 faces upward, and the laser beam 21 is irradiated onto the semiconductor devices 3-2 and 3-3 through the tape 12 and the substrate wafer 2. In Modification 3, the laser processing apparatus 20 clamps the annular frame 13 and the outer edge of the tape 12 with the clamping portion 22 so that the surface 4 of the wafer 1 faces upward, as shown in Figure 20. 【0103】 In Modified Example 3, the laser processing apparatus 20 positions the imaging lens 231 of the laser beam irradiation unit 23, located below the wafer 1 in which the annular frame 13 is clamped by the clamping portion 22, so that it faces the semiconductor devices 3-2, 3-3 along the optical axis of the laser beam 21 irradiated by the laser beam irradiation unit 23. In Modified Example 3, the laser processing apparatus 20 presses the semiconductor device 3 against the substrate wafer 2 with the pressing member 30, emits the laser beam 21 from the laser oscillator 232 of the laser beam irradiation unit 23, reflects the laser beam 21 towards the imaging lens 231 by the mirror 233, images the laser beam 21 with the imaging lens 231 and irradiates the semiconductor devices 3-2, 3-3 through the tape 12 and the substrate wafer 2 for a predetermined time, thereby bonding the semiconductor devices 3-2, 3-3 to the substrate wafer 2, similar to Embodiment 1 and Embodiment 2. 【0104】 The wafer manufacturing method according to Modification 3 involves melting the adhesive layer 10 to bond the semiconductor devices 3-2 and 3-3 to the substrate wafer 2. This allows for the manufacture of a wafer 1 that does not have any defective semiconductor devices 3-1 and 3-3, similar to Embodiment 1, and has the effect of suppressing a decrease in the yield of the stacked device chip 11. 【0105】 Furthermore, the present invention is not limited to the embodiments described above. That is, it can be implemented with various modifications without departing from the core principles of the present invention. In addition, in the wafer manufacturing method according to Embodiment 1, the good product bonding step 105 does not need to be performed. The present invention relates to a laser processing apparatus 20 equipped with a spatial light modulator, which allows the laser beam 21 to be imaged by the spatial light modulator without using an imaging lens 231, thereby enabling the semiconductor device 3-1 Irradiation may be performed on -1,3-2,3-3. 【0106】 Furthermore, in the present invention, the pressing member 30 is not required in the good product bonding step 105 and the laser beam irradiation rebonding step 110. Also, in the present invention, the tape 12 attached to the back surface 9 of the wafer 1 is not required. 【0107】 Furthermore, in the wafer manufacturing method according to Embodiment 2, in step 102 of determining whether the semiconductor device 3 is good or bad, the quality of the bonding state of the semiconductor device 3 may be determined by various means other than measuring the electrical resistance value between the electrodes 8 (for example, by imaging the semiconductor device 3 with an imaging means and performing image processing). 【0108】 Furthermore, in the embodiments described above, wafer 1 is a so-called WOW (Wafer-on-Wafer) wafer in which a semiconductor device 3 is bonded to a device 6 of a substrate wafer 2 by an adhesive layer 10. However, in the present invention, wafer 1 is not limited to a WOW wafer. [Explanation of symbols] 【0109】 1 wafer 2. Wafers for substrates (substrates) 3. Semiconductor devices 3-1,3-3 Semiconductor devices identified as defective 3-2 Semiconductor devices with identical functions 10 Adhesive layer 21 Laser beam 41 Gases 53 Pressurized gas (gas) 101 Wafer preparation steps 103 Laser beam irradiation step 104 Removal step (processing step) 105 Good product bonding step 110 Laser beam irradiation rejoining step (processing step, laser beam irradiation step, rejoining step)

Claims

[Claim 1] A method for manufacturing wafers, A wafer preparation step of preparing a wafer comprising multiple semiconductor devices bonded to a substrate via an adhesive layer, The quality of the multiple semiconductor devices bonded to the substrate is determined, A laser beam irradiation step involves irradiating the adhesive layer to which a semiconductor device identified as defective is attached with a laser beam so as to heat the adhesive layer and melt the adhesive layer corresponding to the area irradiated by the laser beam, A processing step for processing the semiconductor device whose adhesive layer has been melted and released by the laser beam irradiation step, Equipped with, The processing step is a removal step of removing the semiconductor device from the substrate, The removal step involves positioning a containment container large enough to aspirate at least one semiconductor device on the semiconductor device, and then irradiating the containment container with a laser beam to release the adhesion. By supplying gas to semiconductor devices whose adhesive strength has decreased through pressurized gas supply holes formed in the containment container, the semiconductor devices are lifted away from the substrate surface. A method for manufacturing wafers, characterized by the above. [Claim 2] The method for manufacturing a wafer according to claim 1, characterized in that the laser beam is irradiated onto the adhesive layer via the semiconductor device. [Claim 3] The method for manufacturing a wafer according to claim 2, characterized in that the processing step is a rebonding step of rebonding the semiconductor device to the substrate. [Claim 4] The wafer manufacturing method according to claim 2, characterized in that the processing step is a removal step of removing the semiconductor device from the substrate. [Claim 5] A method for manufacturing wafers, A wafer preparation step of preparing a wafer comprising multiple semiconductor devices bonded to a substrate via an adhesive layer, The quality of the multiple semiconductor devices bonded to the substrate is determined, A laser beam irradiation step involves irradiating the adhesive layer to which a semiconductor device identified as defective is attached with a laser beam so as to heat the adhesive layer and melt the adhesive layer corresponding to the area irradiated by the laser beam, A processing step for processing the semiconductor device whose adhesive layer has been melted and released by the laser beam irradiation step, Equipped with, The processing step is a removal step of removing the semiconductor device from the substrate, A method for manufacturing a wafer, characterized in that the removal step includes allowing the semiconductor device of the wafer to free fall downward. [Claim 6] The removal step is, A method for manufacturing a wafer according to claim 5, comprising recovering the semiconductor device by injecting gas into the semiconductor device that has fallen by free fall. [Claim 7] The removal step is, A method for manufacturing a wafer according to claim 1, comprising removing the semiconductor device from the substrate by suction of the levitated semiconductor device. [Claim 8] After performing the removal step, The system further includes a good product bonding step in which a semiconductor device having the same function as the defective semiconductor device is bonded to the area from which the defective semiconductor device was removed. A method for manufacturing a wafer according to any one of claims 1, 2, 4, 5, 6, and 7.

Images