Sensors and electronic devices
The sensor's innovative beam configurations with varied characteristics enhance detection accuracy and dynamic range, addressing limitations in existing MEMS sensors.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- KK TOSHIBA
- Filing Date
- 2023-03-13
- Publication Date
- 2026-06-17
Smart Images

Figure 0007875146000001 
Figure 0007875146000002 
Figure 0007875146000003
Abstract
Description
Technical Field
[0001] Embodiments of the present invention relate to sensors and electronic devices.
Background Art
[0002] For example, there are sensors using MEMS structures. In sensors, improvement of characteristics is desired.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] Embodiments provide a sensor and an electronic device capable of improving characteristics.
Means for Solving the Problems
[0005] According to the embodiment, the sensor includes an element section. The element section includes a first beam, a first beam electrode, a second beam, and a second beam electrode. The first beam includes a first portion, a first other portion, and a first intermediate portion between the first portion and the first other portion. The direction from the first portion to the first other portion is along the first direction. The first beam electrode is connected to the first intermediate portion. The second beam includes a second portion, a second other portion, and a second intermediate portion between the second portion and the second other portion. The direction from the second portion to the second other portion is along the first direction. The second beam electrode includes a second beam electrode connected to the second intermediate portion. The second direction from the first intermediate portion to the first beam electrode intersects the first direction. The direction from the second intermediate portion to the second beam electrode is along the second direction. The first beam electrode and the second beam electrode satisfy at least one of the first, second, third, fourth, fifth, sixth, seventh, and eighth conditions. In the first condition, the second mass of the second beam electrode is different from the first mass of the first beam electrode. In the second condition, at least a portion of the second material contained in the second beam electrode is different from at least a portion of the first material contained in the first beam electrode. In the third condition, the second thickness of the second beam electrode along the third direction is different from the first thickness of the first beam electrode along the third direction. The third direction intersects the plane containing the first and second directions. In the fourth condition, the second size of the second hole contained in the second beam electrode is different from the first size of the first hole contained in the first beam electrode. In the fifth condition, the second density of the second hole is different from the first density of the first hole. In the sixth condition, the second number of the second holes is different from the first number of the first holes, or the second beam electrode includes the second holes, while the first beam electrode does not include the first holes. In the seventh condition, the second layer structure of the second beam electrode is different from the first layer structure of the first beam electrode. In the eighth condition, the second shape of the second beam electrode is different from the first shape of the first beam electrode. [Brief explanation of the drawing]
[0006] [Figure 1] Figure 1 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 2] Figures 2(a) to 2(c) are schematic cross-sectional views illustrating a sensor according to the first embodiment. [Figure 3] Figures 3(a) to 3(d) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 4] Figure 4 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 5] Figures 5(a) to 5(d) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 6] Figures 6(a) to 6(d) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 7] Figures 7(a) to 7(d) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 8] Figures 8(a) to 8(d) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 9] Figures 9(a) to 9(d) are schematic cross-sectional views illustrating a sensor according to the first embodiment. [Figure 10] Figures 10(a) to 10(d) are schematic cross-sectional views illustrating a sensor according to the first embodiment. [Figure 11] Figures 11(a) and 11(b) are schematic plan views illustrating a part of the sensor according to the first embodiment. [Figure 12] Figure 12 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 13] Figures 13(a) and 13(b) are schematic plan views illustrating the sensor according to the first embodiment. [Figure 14] Figure 14 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 15] Figure 15 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 16] Figure 16 is a schematic plan view illustrating a sensor according to the first embodiment. [Figure 17]FIG. 17 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 18] FIG. 18 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 19] FIG. 19 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 20] FIG. 20 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 21] FIG. 21 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 22] FIG. 22 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 23] FIG. 23 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 24] FIG. 24 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 25] FIG. 25 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 26] FIG. 26 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 27] FIG. 27 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 28] FIG. 28 is a schematic diagram illustrating the electronic device according to the second embodiment. [Figure 29] FIGS. 29(a) to 29(h) are schematic diagrams illustrating applications of the electronic device according to the embodiment. [Figure 30] FIGS. 30(a) and 30(b) are schematic diagrams illustrating applications of the sensor according to the embodiment.
DETAILED DESCRIPTION OF THE INVENTION
[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may be depicted differently in different drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.
[0008] (First Embodiment) Figure 1 is a schematic plan view illustrating a sensor according to the first embodiment. Figures 2(a) to 2(c) and 3(a) to 3(d) are schematic cross-sectional views illustrating a sensor according to the first embodiment. Figures 2(a) to 2(c) and Figures 3(a) to 3(d) are cross-sectional views relating to lines A1-A2, A3-A4, A5-A6, A7-A8, A9-A10, A11-A12, and A13-A14 in Figure 1. Figure 4 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 1, the sensor 110 according to this embodiment includes an element section 10E.
[0009] The element section 10E includes a first beam 31, a second beam 32, a first beam electrode 31E, and a second beam electrode 32E.
[0010] The first beam 31 includes a first portion 31a, a first other portion 31b, and a first intermediate portion 31c. The first intermediate portion 31c is provided between the first portion 31a and the first other portion 31b. The direction from the first portion 31a to the first other portion 31b is along the first direction D1.
[0011] The first direction D1 is defined as the X-axis direction. One direction perpendicular to the X-axis direction is defined as the Y-axis direction. The direction perpendicular to both the X-axis and Y-axis directions is defined as the Z-axis direction.
[0012] The first beam electrode 31E is connected to the first intermediate section 31c. The second direction D2 from the first intermediate section 31c to the first beam electrode 31E intersects the first direction D1. The second direction D2 is, for example, the Y-axis direction.
[0013] The second beam 32 includes a second portion 32a, a second other portion 32b, and a second intermediate portion 32c. The second intermediate portion 32c is provided between the second portion 32a and the second other portion 32b. The direction from the second portion 32a to the second other portion 32b is along the first direction D1.
[0014] The second beam electrode 32E is connected to the second intermediate section 32c. The direction from the second intermediate section 32c to the second beam electrode 32E is along the second direction D2. In this example, the direction from the second beam 32 to the first beam 31 is along the second direction D2.
[0015] As shown in Figure 1, in this example, the first beam electrode 31E includes a first extension portion 31Ex and a first extension connection portion 31Ec. The first extension portion 31Ex extends along a first direction D1. The first extension connection portion 31Ec connects the first extension portion 31Ex to a first intermediate portion 31c. The first extension connection portion 31Ec extends, for example, along a second direction D2.
[0016] In this example, the second beam electrode 32E includes a second extension portion 32Ex and a second extension connection portion 32Ec. The second extension portion 32Ex extends along a first direction D1. The second extension connection portion 32Ec connects the second extension portion 32Ex to a second intermediate portion 32c. The second extension connection portion 32Ec extends, for example, along a second direction D2.
[0017] As shown in Figures 2(a) to 2(c) and Figures 3(a) to 3(d), the sensor 110 further includes a base 50S and a first fixing part 10S. The first fixing part 10S is fixed to the base 50S. The direction from the base 50S to the first fixing part 10S is along a third direction D3. The third direction D3 intersects a plane containing the first direction D1 and the second direction D2. The third direction D3 is, for example, the Z-axis direction.
[0018] The element portion 10E further includes a first support portion 28S supported by the first fixed portion 10S. In this example, the first fixed portion 10S includes a first fixed region 10a. The first support portion 28S includes a first support region 28a and a second support region 28b. These support regions are supported by the first fixed region 10a.
[0019] The first part 31a and the second part 32a are connected to the first support part 28S. In this example, the first part 31a is supported in the first support region 28a. The second part 32a is connected to the second support region 28b. A first gap g1 is provided between the base 50S and the element part 10E.
[0020] As shown in Figure 3(a), in this example, the second beam electrode 32E includes a second hole 32Eh. On the other hand, as shown in Figure 2(a), the first beam electrode 31E does not have a hole. In this embodiment, the configuration of the second beam electrode 32E differs from that of the first beam electrode 31E. As a result, the resonance characteristics of the second beam 32 differ from those of the first beam 31. The resonance frequency of the second beam 32 differs from that of the first beam 31.
[0021] In this embodiment, the force applied to the element 10E (e.g., acceleration) can be detected by detecting a change in the resonance characteristics (e.g., resonance frequency) of the beam. In this embodiment, multiple beams with different resonance characteristics (resonance frequencies) are provided. This allows for, for example, a wide dynamic range to be obtained. For example, it is possible to detect a wide dynamic range with high accuracy. According to this embodiment, a sensor capable of improving characteristics can be provided.
[0022] As shown in Figure 4, the sensor 110 may further include a first fixed electrode 51E and a second fixed electrode 52E. The first fixed electrode 51E and the second fixed electrode 52E are fixed to the base 50S. The first fixed electrode 51E faces the first beam electrode 31E. The second fixed electrode 52E faces the second beam electrode 32E. For example, the direction from the first beam electrode 31E to the first fixed electrode 51E is along the second direction D2. For example, the direction from the second beam electrode 32E to the second fixed electrode 52E is along the second direction D2. At least a portion of the first fixed electrode 51E and at least a portion of the second fixed electrode 52E extend along the first direction D1.
[0023] As shown in Figure 3, a control unit 70 may be provided. The control unit 70 may be included in the sensor 110. The control unit 70 may be provided separately from the sensor 110. In one example, the control unit 70 can apply a first AC signal between the first fixed electrode 51E and the first beam electrode 31E. The control unit 70 can apply, for example, a first AC signal between the second fixed electrode 52E and the second beam electrode 32E. These beams vibrate due to the first AC signal. By detecting the vibration characteristics, the force (acceleration) being acted upon can be detected.
[0024] The vibration characteristics may be detected optically. When vibration characteristics are detected optically, light is shone on these beams, and the characteristics of the reflected light are detected. The vibration characteristics may also be detected electrically, for example. When vibration characteristics are detected electrically, for example, changes in capacitance associated with the vibration of the beams are detected.
[0025] As shown in Figure 4, for example, the element section 10E may further include a first opposing beam electrode 31AE and a second opposing beam electrode 32AE. The first opposing beam electrode 31AE is connected to the first intermediate section 31c. The second opposing beam electrode 32AE is connected to the second intermediate section 32c. The first beam 31 is located between the first opposing beam electrode 31AE and the first beam electrode 31E in the second direction D2. The second beam 32 is located between the second opposing beam electrode 32AE and the second beam electrode 32E in the second direction D2.
[0026] As shown in Figure 4, for example, the sensor 110 may further include a first opposing fixed electrode 51AE and a second opposing fixed electrode 52AE fixed to the base 50S. The control unit 70 can detect a first signal generated between the first opposing fixed electrode 51AE and the first opposing beam electrode 31AE. The control unit 70 can detect a second signal generated between the second opposing fixed electrode 52AE and the second opposing beam electrode 32AE. The capacitance (first signal) between the first opposing fixed electrode 51AE and the first opposing beam electrode 31AE changes in accordance with the vibration of the first beam 31. By detecting the first signal, a change in the resonant frequency of the first beam 31 can be detected. The capacitance (second signal) between the second opposing fixed electrode 52AE and the second opposing beam electrode 32AE changes in accordance with the vibration of the second beam 32. By detecting the second signal, a change in the resonant frequency of the second beam 32 can be detected.
[0027] The control unit 70 may output a signal corresponding to the difference between the first signal and the second signal. Differential processing enables detection with higher accuracy. For example, a highly accurate detection result with suppressed temperature dependence can be obtained.
[0028] As shown in Figure 1, the element portion 10E may include a movable member 20M. As shown in Figure 3(d), the movable member 20M is supported by the first fixed portion 10S. In this example, the first support portion 28S includes a third support region 28c. In this example, the movable member 20M is supported by the third support region 28c.
[0029] The movable member 20M includes a first movable part 21a. The first other part 31b and the second other part 32b are connected to the first movable part 21a.
[0030] As shown in Figure 4, the movable member 20M includes a first movable base 21B, a first movable intermediate portion 21M, and a first movable connecting portion 21C. The first movable base 21B is supported by the first fixed portion 10S. The first movable base 21B is supported, for example, by the third support region 28c.
[0031] The first movable intermediate section 21M is provided between the first movable base section 21B and the first movable section 21a. The first movable connecting section 21C is provided between the first movable base section 21B and the first movable intermediate section 21M. The first movable connecting section 21C connects the first movable intermediate section 21M to the first movable base section 21B.
[0032] As shown in Figure 4, the width w21C of the first movable connection part 21C in the second direction D2 is narrower than the width w21B of the first movable base part 21B in the second direction D2. The width w21C of the first movable connection part is narrower than the width w21M of the first movable intermediate part 21M in the second direction D2. The first movable connection part 21C functions, for example, as a pivot part. The first movable intermediate part 21M and the first movable part 21a are easily movable. Forces are amplified. Amplified stress is applied to the first beam 31 and the second beam 32. Large changes occur in the resonant frequencies of the first beam 31 and the second beam 32.
[0033] As shown in Figure 4, the width w21a of the first movable part 21a in the second direction D2 is wider than the width w21C of the first movable connection part. The first movable part 21a functions as a weight.
[0034] As shown in Figure 1, in this example, the first opposing beam electrode 31AE includes a first opposing extension 31AEx and a first opposing extension connection 31AEc. The first opposing extension 31AEx extends along a first direction D1. The first opposing extension connection 31AEc connects the first opposing extension 31AEx to a first intermediate portion 31c. The first opposing extension connection 31AEc extends, for example, along a second direction D2.
[0035] In this example, the second opposing beam electrode 32AE includes a second opposing extension 32AEx and a second opposing extension connection 32AEc. The second opposing extension 32AEx extends along a first direction D1. The second opposing extension connection 32AEc connects the second opposing extension 32AEx to a second intermediate portion 32c. The second opposing extension connection 32AEc extends, for example, along a second direction D2.
[0036] Figures 5(a) to 5(d) are schematic cross-sectional views illustrating the sensor according to the first embodiment. Figures 5(a) to 5(d) are cross-sectional views corresponding to lines A1-A2, A5-A6, A7-A8, and A11-A12 in Figure 1. In the sensor 110a according to this embodiment, the mass of the second beam electrode 32E is different from the mass of the first beam electrode 31E. In the sensor 110a, the mass of the second opposing beam electrode 32AE is different from the mass of the first opposing beam electrode 31AE. In the sensor 110a, the resonance characteristics (resonance frequencies) of the two beams are different.
[0037] Figures 6(a) to 6(d) are schematic cross-sectional views illustrating the sensor according to the first embodiment. Figures 6(a) to 6(d) are cross-sectional views corresponding to lines A1-A2, A5-A6, A7-A8, and A11-A12 in Figure 1. In the sensor 110b according to this embodiment, at least a portion of the material of the second beam electrode 32E is different from at least a portion of the material of the first beam electrode 31E. In the sensor 110b, at least a portion of the material of the second opposing beam electrode 32AE is different from at least a portion of the material of the first opposing beam electrode 31AE. In the sensor 110b, the resonance characteristics (resonance frequencies) of the two beams are different.
[0038] Figures 7(a) to 7(d) are schematic cross-sectional views illustrating the sensor according to the first embodiment. Figures 7(a) to 7(d) are cross-sectional views corresponding to lines A1-A2, A5-A6, A7-A8, and A11-A12 in Figure 1. In the sensor 110c according to the embodiment, the thickness of the second beam electrode 32E along the third direction D3 (second thickness t32E) is different from the thickness of the first beam electrode 31E along the third direction D3 (first thickness t31E). In the sensor 110c, the thickness of the second opposing beam electrode 32AE along the third direction D3 (second opposing thickness t32AE) is different from the thickness of the first beam electrode 31E along the third direction D3 (first thickness t31E). The two beams have different resonance characteristics (resonance frequencies).
[0039] Figures 8(a) to 8(d) are schematic cross-sectional views illustrating the sensor according to the first embodiment. Figures 8(a) to 8(d) are cross-sectional views corresponding to lines A1-A2, A5-A6, A7-A8, and A11-A12 in Figure 1. In the sensor 110d according to this embodiment, the second size of the second hole 32Eh included in the second beam electrode 32E is different from the first size of the first hole 31Eh included in the first beam electrode 31E. In the sensor 110d, the second opposing size of the second opposing hole 32AEh included in the second opposing beam electrode 32AE is different from the first opposing size of the first opposing hole 31AEh included in the first opposing beam electrode 31AE. The two beams have different resonance characteristics (resonance frequencies).
[0040] Figures 9(a) to 9(d) are schematic cross-sectional views illustrating a sensor according to the first embodiment. Figures 9(a) to 9(d) are cross-sectional views corresponding to lines A1-A2, A5-A6, A7-A8, and A11-A12 in Figure 1. In the sensor 110e according to this embodiment, the second density of the second hole 32Eh is different from the first density of the first hole 31Eh. In the sensor 110e, the second opposing density of the second opposing hole 32AEh is different from the first opposing density of the first opposing hole 31AEh. The two beams have different resonance characteristics (resonance frequencies).
[0041] In sensor 110e, the second number of the second holes 32Eh is different from the first number of the first holes 31Eh. Alternatively, the second beam electrode 32E includes the second hole 32Eh, while the first beam electrode 31E does not include the first hole 31Eh. In sensor 110e, the second number of opposing holes 32AEh is different from the first number of opposing holes 31AEh. Alternatively, the second opposing beam electrode 32AE includes the second opposing hole 32AEh, while the first opposing beam electrode 31AE does not include the first opposing hole 31AEh. The two beams have different resonance characteristics (resonance frequencies).
[0042] Figures 10(a) to 10(d) are schematic cross-sectional views illustrating a sensor according to the first embodiment. Figures 10(a) to 10(d) are cross-sectional views corresponding to lines A1-A2, A5-A6, A7-A8, and A11-A12 in Figure 1. In the sensor 110f according to this embodiment, the second layer structure of the second beam electrode 32E is different from the first layer structure of the first beam electrode 31E. In this example, the second beam electrode 32E includes the second beam layer 32EF, while the first beam electrode 31E does not include the first beam layer. In the sensor 110f, the second opposing layer structure of the second opposing beam electrode 32AE is different from the first opposing layer structure of the first opposing beam electrode 31AE. In this example, the second opposing beam electrode 32AE includes the second opposing beam layer 32AEF, while the first opposing beam electrode 31AE does not include the first opposing beam layer. The two beams have different resonance characteristics (resonance frequencies). The second beam layer 32EF and the second opposing beam layer 32AEF may include, for example, a metal film.
[0043] Figures 11(a) and 11(b) are schematic plan views illustrating a part of the sensor according to the first embodiment. Figure 11(a) illustrates the portion including the first beam 31. Figure 11(b) illustrates the portion including the second beam 32. In the sensor 110g according to this embodiment, the second shape of the second beam electrode 32E is different from the first shape of the first beam electrode 31E. In the sensor 110g, the second opposing shape of the second opposing beam electrode 32AE is different from the first opposing shape of the first opposing beam electrode 31AE. The two beams have different resonance characteristics (resonance frequencies). In this example, the ratio of the length of the second extension portion 32Ex in the second direction D2 to the length of the second extension portion 32Ex in the first direction D1 is higher than the ratio of the length of the first extension portion 31Ex in the second direction D2 to the length of the first extension portion 31Ex in the first direction D1. The difference in shape may include a difference in at least one of convex or concave portions.
[0044] As described above, in the embodiment, the first beam electrode 31E and the second beam electrode 32E may satisfy at least one of the first, second, third, fourth, fifth, sixth, seventh, and eighth conditions.
[0045] In the first condition, the second mass of the second beam electrode 32E is different from the first mass of the first beam electrode 31E. In the second condition, at least a portion of the second material contained in the second beam electrode 32E is different from at least a portion of the first material contained in the first beam electrode 31E. In the third condition, the second thickness t32E of the second beam electrode 32E along the third direction D3 is different from the first thickness t31E of the first beam electrode 31E along the third direction D3. The third direction D3 intersects the plane containing the first direction D1 and the second direction D2.
[0046] In condition 4, the second size of the second hole 32Eh contained in the second beam electrode 32E is different from the first size of the first hole 31Eh contained in the first beam electrode 31E. In condition 5, the second density of the second hole 32Eh is different from the first density of the first hole 31Eh.
[0047] In condition 6, the second number of the second hole 32Eh is different from the first number of the first hole 31Eh. Alternatively, in condition 6, the second beam electrode 32E includes the second hole 32Eh, and the first beam electrode 31E does not include the first hole 31Eh.
[0048] In condition 7, the second layer structure of the second beam electrode 32E is different from the first layer structure of the first beam electrode 31E. In condition 8, the second shape of the second beam electrode 32E is different from the first shape of the first beam electrode 31E.
[0049] The first opposing beam electrode 31AE and the second opposing beam electrode 32AE may satisfy at least one of the 9th, 10th, 11th, 12th, 13th, 14th, 15th, and 16th conditions.
[0050] In condition 9, the second opposing mass of the second opposing beam electrode 32AE is different from the first opposing mass of the first opposing beam electrode 31AE. In condition 10, at least a portion of the second opposing material included in the second opposing beam electrode 32AE is different from at least a portion of the first opposing material included in the first opposing beam electrode 31AE. In condition 11, the second opposing thickness t32AE of the second opposing beam electrode 32AE along the third direction D3 is different from the first opposing thickness t31AE of the first opposing beam electrode 31AE along the third direction D3.
[0051] In condition 12, the second opposing size of the second opposing hole 32AEh included in the second opposing beam electrode 32AE is different from the first opposing size of the first opposing hole 31AEh included in the first opposing beam electrode 31AE. In condition 13, the second opposing density of the second opposing hole 32AEh is different from the first opposing density of the first opposing hole 31AEh.
[0052] In condition 14, the second number of opposing holes 32AEh is different from the first number of opposing holes 31AEh. Alternatively, in condition 14, the second opposing beam electrode 32AE includes the second opposing hole 32AEh, and the first opposing beam electrode 31AE does not include the first opposing hole 31AEh.
[0053] In condition 15, the second opposing layer structure of the second opposing beam electrode 32AE is different from the first opposing layer structure of the first opposing beam electrode 31AE. In condition 16, the second opposing shape of the second opposing beam electrode 32AE is different from the first opposing shape of the first opposing beam electrode 31AE.
[0054] Figure 12 is a schematic plan view illustrating a sensor according to the first embodiment. Figures 13(a) and 13(b) are schematic plan views illustrating the sensor according to the first embodiment. As shown in Figure 12, in the sensor 111 according to this embodiment, the shape of the first beam electrode 31E is different from the shape of the first beam electrode 31E in sensor 110. In sensor 111, the shape of the second beam electrode 32E is different from the shape of the second beam electrode 32E in sensor 110. The configuration of sensor 111, aside from these differences, may be the same as that of sensor 110. In Figure 12, the fixed electrode is omitted.
[0055] As shown in Figure 13(a), in the sensor 111, the first beam electrode 31E includes a plurality of first extensions 31Ex. One of the plurality of first extensions 31Ex lies between the first beam 31 and another of the plurality of first extensions 31Ex. For example, the length of one of the plurality of first extensions 31Ex along the aforementioned first direction D1 is longer than the length of the plurality of first extensions 31Ex along the aforementioned other first direction D1. By providing a plurality of first extensions 31Ex, for example, the vibration of the first beam 31 can be controlled effectively and with high precision.
[0056] As shown in Figure 13(b), in the sensor 111, the second beam electrode 32E includes a plurality of second extensions 32Ex. One of the plurality of second extensions 32Ex lies between the second beam 32 and another of the plurality of second extensions 32Ex. For example, the length of one of the plurality of second extensions 32Ex along the aforementioned first direction D1 is longer than the length of the plurality of second extensions 32Ex along the aforementioned other first direction D1. By providing a plurality of second extensions 32Ex, for example, the vibration of the second beam 32 can be controlled effectively and with high precision.
[0057] As shown in Figure 13(a), in the sensor 111, the first opposing beam electrode 31AE includes a plurality of first opposing extensions 31AEx. One of the plurality of first opposing extensions 31AEx lies between the first beam 31 and another of the plurality of first opposing extensions 31AEx. For example, the length of the plurality of first opposing extensions 31AEx along one of the first directions D1 is longer than the length of the plurality of first opposing extensions 31AEx along another of the first directions D1. By providing a plurality of first opposing extensions 31AEx, for example, the vibration characteristics of the first beam 31 can be detected effectively and with high accuracy.
[0058] As shown in Figure 13(b), in the sensor 111, the second opposing beam electrode 32AE includes a plurality of second opposing extensions 32AEx. One of the plurality of second opposing extensions 32AEx lies between the second beam 32 and another of the plurality of second opposing extensions 32AEx. For example, the length of one of the plurality of second opposing extensions 32AEx along the aforementioned first direction D1 is longer than the length of the plurality of second opposing extensions 32AEx along the aforementioned other first direction D1. By providing a plurality of second opposing extensions 32AEx, for example, the vibration characteristics of the second beam 32 can be detected effectively and with high accuracy.
[0059] Figure 14 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 14, in the sensor 112 according to this embodiment, the element section 10E includes the first opposing beam 31A and the second opposing beam 32A. The configuration of the sensor 112 other than these may be the same as that of the sensor 110.
[0060] In the sensor 112, the first opposing beam 31A includes a first opposing portion 31Aa, a first other opposing portion 31Ab, and a first opposing intermediate portion 31Ac. The first opposing intermediate portion 31Ac is provided between the first opposing portion 31Aa and the first other opposing portion 31Ab. The direction from the first opposing portion 31Aa to the first other opposing portion 31Ab is along the first direction D1. The first opposing beam electrode 31AE is connected to the first opposing intermediate portion 31Ac.
[0061] The second opposing beam 32A includes a second opposing portion 32Aa, a second other opposing portion 32Ab, and a second opposing intermediate portion 32Ac. The second opposing intermediate portion 32Ac is provided between the second opposing portion 32Aa and the second other opposing portion 32Ab. The direction from the second opposing portion 32Aa to the second other opposing portion 32Ab is along the first direction D1. The second opposing beam electrode 32AE is connected to the second opposing intermediate portion 32Ac.
[0062] For example, sensor 112 can detect a wide dynamic range with high accuracy. It is possible to provide a sensor with improved characteristics.
[0063] The first extending connection part 31Ec connects the first extending part 31Ex to the first intermediate part 31c. The second extending connection part 32Ec connects the second extending part 32Ex to the second intermediate part 32c. The first opposing extending connection part 31AEc connects the first opposing extending part 31AEx to the first opposing intermediate part 31Ac. The second opposing extending connection part 32AEc connects the second opposing extending part 32AEx to the second opposing intermediate part 32Ac.
[0064] Figure 15 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 15, the sensor 113 according to this embodiment is provided with a plurality of first extending portions 31Ex, a plurality of second extending portions 32Ex, a plurality of first opposing extending portions 31AEx, and a plurality of second opposing extending portions 32AEx. The configuration of the sensor 113 other than these may be the same as that of the sensor 112.
[0065] Figure 16 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 16, in the sensor 114 according to this embodiment, the first fixing portion 10S includes a first fixing region 10a, a second fixing region 10b, and a third fixing region 10c. The configuration of the sensor 114, excluding this portion, may be the same as that of the sensor 110.
[0066] In the sensor 114, the first support region 28a is supported by the first fixed region 10a. The second support region 28b is supported by the second fixed region 10b. The third support region 28c is supported by the third fixed region 10c.
[0067] Figure 17 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 17, in the sensor 115 according to this embodiment, the first fixing portion 10S includes a first fixing region 10a, a second fixing region 10b, and a third fixing region 10c. The configuration of the sensor 115 other than this portion may be the same as that of the sensor 111 or sensor 114.
[0068] Figure 18 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 18, in the sensor 116 according to this embodiment, the first fixing portion 10S includes a first fixing region 10a, a second fixing region 10b, and a third fixing region 10c. The configuration of the sensor 116 other than this portion may be the same as that of the sensor 112 or sensor 114.
[0069] Figure 19 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 19, in the sensor 117 according to this embodiment, the first fixing portion 10S includes a first fixing region 10a, a second fixing region 10b, and a third fixing region 10c. The configuration of the sensor 116, excluding this portion, may be the same as that of the sensor 113 or sensor 114.
[0070] Sensors 113 to 117, for example, can detect a wide dynamic range with high accuracy. Sensors with improved characteristics can be provided.
[0071] Figure 20 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 20, in the sensor 120 according to this embodiment, the configuration of the first beam 31 and the second beam 32 is different from the configuration of these in the sensor 110. The rest of the configuration of the sensor 120 may be the same as that of the sensor 110.
[0072] In the sensor 120, the position of the first other part 31b in the first direction D1 is between the position of the first part 31a in the first direction D1 and the position of the second part 32a in the first direction D1. The position of the second other part 32b in the first direction D1 is between the position of the first other part 31b in the first direction D1 and the second part 32a. 1 It is located between the position in direction D2 and [the other position].
[0073] In the sensor 120, the element portion 10E includes a movable member 20M. The movable member 20M is supported by the first fixed portion 10S. The movable member 20M includes a first movable portion 21a. The first other portion 31b and the second other portion 32b are connected to the first movable portion 21a. For example, in the first direction D1, the first movable portion 21a is located between the first other portion 31b and the second other portion 32b.
[0074] The first support portion 28S includes a first support area 28a, a second support area 28b, and a third support area 28c. The first portion 31a is supported by the first support area 28a. The second portion 32a is supported by the second support area 28b. The first movable portion 21a is supported by the third support area 28c.
[0075] In this example, the movable member 20M further includes a first movable base 21B supported in a third support region 28c, and a first movable connecting portion 21C provided between the first movable base 21B and the first movable portion 21a.
[0076] The width w21C of the first movable connection part 21C in the first direction D1 is narrower than the width w21B of the first movable base part 21B in the first direction D1. The width w21C of the first movable connection part is narrower than the width w21a of the first movable part part 21a in the first direction D1. The first movable connection part 21C functions, for example, as a pivot part. The applied force is amplified. Stress is effectively applied to the two beams. The resonance characteristics (e.g., resonance frequency) are effectively changed in the two beams.
[0077] In this example, the movable member 20M further includes a first movable weight 21W connected to a first movable part 21a. The first movable part 21a is located between the first movable connection part 21C and the first movable weight 21W in a second direction D2. The width of the first movable weight 21W in a first direction D1 is wider than the width of the first movable part w21a. The first movable weight 21W applies a greater stress to the two beams.
[0078] In the sensor 120, the element section 10E is provided with a first beam electrode 31E and a second beam electrode 32E. The element section 10E may also include a first opposing beam electrode 31AE and a second opposing beam electrode 32AE. The first opposing beam electrode 31AE is connected to the first intermediate section 31c. The second opposing beam electrode 32AE is connected to the second intermediate section 32c. The first beam 31 is located between the first opposing beam electrode 31AE and the first beam electrode 31E in the second direction D2. The second beam 32 is located between the second opposing beam electrode 32AE and the second beam electrode 32E in the second direction D2.
[0079] In sensor 120, at least one of the above conditions 1 to 8 may be applied. In sensor 120, at least one of the above conditions 9 to 16 may be applied. In sensor 120, for example, detection with high accuracy and a wide dynamic range is possible. A sensor with improved characteristics can be provided.
[0080] In sensor 120, the first beam electrode 31E includes a first extension portion 31Ex and a first extension connection portion 31Ec (see Figure 11(a)). The second beam electrode 32E includes a second extension portion 32Ex and a second extension connection portion 32Ec (see Figure 11(b)). The first opposing beam electrode 31AE includes a first opposing extension portion 31AEx and a first opposing extension connection portion 31AEc (see Figure 11(a)). The second opposing beam electrode 32AE includes a second opposing extension portion 32AEx and a second opposing extension connection portion 32AEc (see Figure 11(b)).
[0081] Figure 21 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 21, in the sensor 121 according to this embodiment, the element portion 10E includes a plurality of first extending portions 31Ex, a plurality of second extending portions 32Ex, a plurality of first opposing extending portions 31AEx, and a plurality of second opposing extending portions 32AEx. The configuration of the sensor 121 other than this may be the same as the configuration of the sensor 120.
[0082] Figure 22 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 22, the sensor 122 according to this embodiment is provided with a first opposing beam 31A and a second opposing beam 32A. The configuration of the sensor 122, aside from these, may be the same as that of the sensor 120.
[0083] In the sensor 122, the element section 10E includes a first opposing beam 31A, a first opposing beam electrode 31AE, a second opposing beam 32A, and a second opposing beam electrode 32AE. As already described, the first opposing beam 31A includes a first opposing portion 31Aa, a first other opposing portion 31Ab, and a first opposing intermediate portion 31Ac. The direction from the first opposing portion 31Aa to the first other opposing portion 31Ab is along the first direction D1. The first opposing beam electrode 31AE is connected to the first opposing intermediate portion 31Ac.
[0084] The second opposing beam 32A includes a second opposing portion 32Aa, a second other opposing portion 32Ab, and a second opposing intermediate portion 32Ac. The direction from the second opposing portion 32Aa to the second other opposing portion 32Ab is along the first direction D1. The second opposing beam electrode 32AE is connected to the second opposing intermediate portion 32Ac.
[0085] Figure 23 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 23, in the sensor 123 according to this embodiment, the element portion 10E includes a plurality of first extending portions 31Ex, a plurality of second extending portions 32Ex, a plurality of first opposing extending portions 31AEx, and a plurality of second opposing extending portions 32AEx. The configuration of the sensor 123 other than this may be the same as the configuration of the sensor 122.
[0086] Figure 24 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 24, in the sensor 120a according to this embodiment, the first fixing portion 10S includes a first fixing region 10a, a second fixing region 10b, and a third fixing region 10c. The configuration of the sensor 120a other than this portion may be the same as that of the sensor 120.
[0087] Figure 25 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 25, in the sensor 121a according to this embodiment, the first fixing portion 10S includes a first fixing region 10a, a second fixing region 10b, and a third fixing region 10c. The configuration of the sensor 121a, excluding this portion, may be the same as that of the sensor 121.
[0088] Figure 26 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 26, in the sensor 122a according to this embodiment, the first fixing portion 10S includes a first fixing region 10a, a second fixing region 10b, and a third fixing region 10c. The configuration of the sensor 122a, excluding this portion, may be the same as that of the sensor 122.
[0089] Figure 27 is a schematic plan view illustrating a sensor according to the first embodiment. As shown in Figure 27, in the sensor 123a according to this embodiment, the first fixing portion 10S includes a first fixing region 10a, a second fixing region 10b, and a third fixing region 10c. The configuration of the sensor 123a, excluding this portion, may be the same as that of the sensor 123.
[0090] Sensors 121-123 and 120a-123a can, for example, detect a wide dynamic range with high accuracy. Sensors with improved characteristics can be provided.
[0091] (Second Embodiment) The second embodiment relates to an electronic device. Figure 28 is a schematic diagram illustrating an electronic device according to the second embodiment. As shown in Figure 28, the electronic device 310 according to the embodiment includes a sensor according to the first embodiment and a circuit control unit 170. In this example, a sensor 110 is depicted as the sensor. The circuit control unit 170 can control a circuit 180 based on a signal S1 obtained from the sensor. The circuit 180 is, for example, a control circuit for a drive device 185. According to the embodiment, for example, a circuit 180 for controlling a drive device 185 can be controlled with high precision.
[0092] Figures 29(a) to 29(h) are schematic diagrams illustrating applications of the electronic device according to the embodiment. As shown in Figure 29(a), the electronic device 310 may be at least part of a robot. As shown in Figure 29(b), the electronic device 310 may be at least part of a machine robot installed in a manufacturing plant or the like. As shown in Figure 29(c), the electronic device 310 may be at least part of an automated guided vehicle in a factory or the like. As shown in Figure 29(d), the electronic device 310 may be at least part of a drone (unmanned aerial vehicle). As shown in Figure 29(e), the electronic device 310 may be at least part of an airplane. As shown in Figure 29(f), the electronic device 310 may be at least part of a ship. As shown in Figure 29(g), the electronic device 310 may be at least part of a submarine. As shown in Figure 29(h), the electronic device 310 may be at least part of an automobile. The electronic device 310 may include, for example, at least one of a robot and a mobile body.
[0093] Figures 30(a) and 30(b) are schematic diagrams illustrating applications of the sensor according to the embodiment. As shown in Figure 30(a), the sensor 430 according to the embodiment includes the sensor according to the first embodiment and a transmitting / receiving unit 420. In the example in Figure 30(a), the sensor 110 is depicted as the sensor. The transmitting / receiving unit 420 can transmit the signal obtained from the sensor 110 by, for example, at least one of wireless and wired methods. The sensor 430 is installed, for example, on a slope surface 410 such as a road 400. The sensor 430 can monitor the state of, for example, a facility (e.g., infrastructure). The sensor 430 may be, for example, a state monitoring device.
[0094] For example, the sensor 430 detects changes in the condition of the slope surface 410 of the road 400 with high accuracy. Changes in the condition of the slope surface 410 include, for example, changes in the inclination angle and changes in the vibration state. The signal (inspection result) obtained from the sensor 110 is transmitted by the transmitting / receiving unit 420. The condition of the facility (e.g., infrastructure) can be monitored, for example, continuously.
[0095] As shown in Figure 30(b), the sensor 430 is installed, for example, on a part of a bridge 460. The bridge 460 is built over a river 470. For example, the bridge 460 includes at least one of a main girder 450 and a pier 440. The sensor 430 is installed on at least one of the main girder 450 and the pier 440. For example, the angle of at least one of the main girder 450 and the pier 440 may change due to deterioration or other reasons. For example, the vibration state may change in at least one of the main girder 450 and the pier 440. The sensor 430 can detect these changes with high accuracy. The detection results can be transmitted to any location by the transmitting / receiving unit 420. Anomalies can be effectively detected.
[0096] The embodiment includes the following configuration (for example, a proposed technical solution). (Composition 1) A first beam, the first beam comprising a first portion, a first other portion, and a first intermediate portion between the first portion and the first other portion, wherein the direction from the first portion to the first other portion is along the first direction, The first beam electrode connected to the aforementioned first intermediate portion, A second beam, the second beam including a second part, a second other part, and a second intermediate part between the second part and the second other part, wherein the direction from the second part to the second other part is along the first direction, The second beam electrode connected to the aforementioned second intermediate section, It comprises an element section including, The second direction from the first intermediate portion to the first beam electrode intersects with the first direction. The direction from the second intermediate portion to the second beam electrode is along the second direction, The first beam electrode and the second beam electrode satisfy at least one of the first, second, third, fourth, fifth, sixth, seventh, and eighth conditions. In the first condition described above, the second mass of the second beam electrode is different from the first mass of the first beam electrode, In the second condition described above, at least a portion of the second material included in the second beam electrode differs from at least a portion of the first material included in the first beam electrode, In the third condition, the second thickness of the second beam electrode along the third direction is different from the first thickness of the first beam electrode along the third direction, and the third direction intersects with a plane including the first and second directions. In the fourth condition described above, the second size of the second hole included in the second beam electrode is different from the first size of the first hole included in the first beam electrode. In the fifth condition described above, the second density of the second pore is different from the first density of the first pore. In the sixth condition above, the second number of the second holes is different from the first number of the first holes, or the second beam electrode includes the second holes, and the first beam electrode does not include the first holes. In the seventh condition described above, the second layer structure of the second beam electrode differs from the first layer structure of the first beam electrode. In the eighth condition described above, the second shape of the second beam electrode is different from the first shape of the first beam electrode.
[0097] (Configuration 2) Substrate and, A first fixing part fixed to the base, Furthermore, The element portion further includes a first support portion supported by the first fixed portion, The direction from the base to the first fixing part is along the third direction, The first part and the second part are connected to the first support, The sensor according to configuration 1, wherein a first gap is provided between the substrate and the element portion.
[0098] (Composition 3) The direction from the second beam to the first beam is along the second direction, as described in configuration 2 for the sensor.
[0099] (Composition 4) The element portion further includes a movable member supported by the first fixed portion, The movable member includes a first movable part, The first other part and the second other part are sensors according to configuration 3, connected to the first movable part.
[0100] (Composition 5) The aforementioned movable member is The first movable base supported by the first fixed part, A first movable intermediate portion is provided between the first movable base and the first movable portion, A first movable connecting portion is provided between the first movable base and the first movable intermediate portion, It further includes, The width of the first movable connection portion in the second direction is narrower than the width of the first movable base portion in the second direction. The sensor according to configuration 4, wherein the width of the first movable connection portion is narrower than the width of the first movable intermediate portion in the second direction.
[0101] (Composition 6) The first beam electrode is, A first extending portion extending along the first direction, A first extending connecting portion connects the first extending portion to the first intermediate portion, Includes, The second beam electrode is, A second extending portion extending along the first direction, A second extending connecting portion connects the second extending portion to the second intermediate portion, A sensor included in any one of configurations 3 to 5.
[0102] (Composition 7) The first beam electrode includes a plurality of first extensions, One of the plurality of first extensions is located between the first beam and another of the plurality of first extensions. The length of the plurality of first extensions along one of the first directions is longer than the length of the plurality of first extensions along another of the first directions. The second beam electrode includes a plurality of the second extensions, One of the plurality of second extensions is located between the second beam and another of the plurality of second extensions. The sensor according to configuration 6, wherein the length of the plurality of second extending portions along one of the first directions is longer than the length of the plurality of second extending portions along another of the first directions.
[0103] (Composition 8) The aforementioned element section is The first opposing beam electrode connected to the first intermediate portion, The second opposing beam electrode connected to the second intermediate portion, It further includes, The first beam is located between the first opposing beam electrode and the first beam electrode in the second direction. The sensor according to configuration 3, wherein the second beam is located between the second opposing beam electrode and the second beam electrode in the second direction.
[0104] (Composition 9) The aforementioned element section is A first opposing beam, the first opposing beam includes a first opposing portion, a first other opposing portion, and a first opposing intermediate portion between the first opposing portion and the first other opposing portion, wherein the direction from the first opposing portion to the first other opposing portion is along the first direction, The first opposing beam electrode connected to the aforementioned first opposing intermediate portion, A second opposing beam, the second opposing beam includes a second opposing portion, a second other opposing portion, and a second opposing intermediate portion between the second opposing portion and the second other opposing portion, wherein the direction from the second opposing portion to the second other opposing portion is along the first direction, The second opposing beam electrode connected to the aforementioned second opposing intermediate portion, The sensor described in configuration 3, including the sensor described in configuration 3.
[0105] (Composition 10) The first opposing beam electrode and the second opposing beam electrode satisfy at least one of the 9th, 10th, 11th, 12th, 13th, 14th, 15th, and 16th conditions. In the ninth condition described above, the second opposing mass of the second opposing beam electrode is different from the first opposing mass of the first opposing beam electrode. In the above-mentioned condition 10, at least a portion of the second opposing material included in the second opposing beam electrode is different from at least a portion of the first opposing material included in the first opposing beam electrode, In the 11th condition, the second opposing thickness of the second opposing beam electrode along the third direction is different from the first opposing thickness of the first opposing beam electrode along the third direction. In the 12th condition described above, the second opposing size of the second opposing hole included in the second opposing beam electrode is different from the first opposing size of the first opposing hole included in the first opposing beam electrode. In the 13th condition described above, the second opposing density of the second opposing hole is different from the first opposing density of the first opposing hole. In the 14th condition above, the second number of opposing holes in the second opposing hole is different from the first number of opposing holes in the first opposing hole, or the second opposing beam electrode includes the second opposing hole, and the first opposing beam electrode does not include the first opposing hole. In the above-described condition 15, the second opposing layer structure of the second opposing beam electrode differs from the first opposing layer structure of the first opposing beam electrode. The sensor according to configuration 8 or 9, wherein, in the 16th condition, the second opposing shape of the second opposing beam electrode is different from the first opposing shape of the first opposing beam electrode.
[0106] (Composition 11) The position of the first other part in the first direction is between the position of the first part in the first direction and the position of the second part in the first direction. The position of the second other part in the first direction is the position of the first other part in the first direction and the position of the second part 1 A sensor according to configuration 2, located between the aforementioned position in the direction and the following.
[0107] (Composition 12) The element portion further includes a movable member supported by the first fixed portion, The movable member includes a first movable part, The first other part and the second other part are connected to the first movable part, The first support portion includes a first support region, a second support region, and a third support region. The first portion is supported in the first support region, The second portion is supported in the second support region, The first movable part is the sensor according to configuration 11, which is supported in the third support area.
[0108] (Composition 13) The aforementioned movable member is The first movable base supported in the third support region, A first movable connecting portion is provided between the first movable base and the first movable portion, It further includes, The width of the first movable connection portion in the first direction is narrower than the width of the first movable base portion in the first direction. The sensor according to configuration 12, wherein the width of the first movable connection portion is narrower than the width of the first movable portion of the first movable portion in the first direction.
[0109] (Composition 14) The movable member further includes a first movable weight connected to the first movable part, The first movable part is located between the first movable connecting part and the first movable weight part in the second direction. The sensor according to configuration 13, wherein the width of the first movable weight in the first direction is wider than the width of the first movable part.
[0110] (Composition 15) The first beam electrode is, A first extending portion extending along the first direction, A first extending connecting portion connects the first extending portion to the first intermediate portion, Includes, The second beam electrode is, A second extending portion extending along the second direction, A second extending connecting portion connects the second extending portion to the second intermediate portion, A sensor as described in any one of configurations 11 to 14, including the sensor described in one of configurations 11 to 14.
[0111] (Composition 16) The first beam electrode includes a plurality of first extensions, One of the plurality of first extensions is located between the first beam and another of the plurality of first extensions. The length of the plurality of first extensions along one of the first directions is longer than the length of the plurality of first extensions along another of the first directions. The second beam electrode includes a plurality of the second extensions, One of the plurality of second extensions is located between the second beam and another of the plurality of second extensions. The sensor according to configuration 15, wherein the length of the plurality of second extending portions along one of the first directions is longer than the length of the plurality of second extending portions along another of the first directions.
[0112] (Composition 17) The aforementioned element section is The first opposing beam electrode connected to the first intermediate portion, The second opposing beam electrode connected to the second intermediate portion, It further includes, The first beam is located between the first opposing beam electrode and the first beam electrode in the second direction. The second beam is located between the second opposing beam electrode and the second beam electrode in the second direction, as described in configuration 11.
[0113] (Composition 18) The aforementioned element section is A first opposing beam, the first opposing beam includes a first opposing portion, a first other opposing portion, and a first opposing intermediate portion between the first opposing portion and the first other opposing portion, wherein the direction from the first opposing portion to the first other opposing portion is along the first direction, The first opposing beam electrode connected to the aforementioned first opposing intermediate portion, A second opposing beam, the second opposing beam includes a second opposing portion, a second other opposing portion, and a second opposing intermediate portion between the second opposing portion and the second other opposing portion, wherein the direction from the second opposing portion to the second other opposing portion is along the first direction, The second opposing beam electrode connected to the aforementioned second opposing intermediate portion, The sensor described in configuration 11, including the sensor.
[0114] (Composition 19) Control unit and A first fixed electrode and a second fixed electrode fixed to the substrate, Furthermore, The first fixed electrode faces the first beam electrode, The second fixed electrode faces the second beam electrode, The control unit is capable of applying a first AC signal between the first fixed electrode and the first beam electrode. The control unit is capable of applying the first AC signal between the second fixed electrode and the second beam electrode, as described in any one of configurations 2 to 17.
[0115] (Composition 20) A sensor described in one of configurations 1 to 19, A circuit control unit capable of controlling the circuit based on the signal obtained from the sensor, An electronic device equipped with [a specific feature / feature].
[0116] (Composition 21) The first opposing beam electrode and the second opposing beam electrode satisfy at least one of the 9th, 10th, 11th, 12th, 13th, 14th, 15th, and 16th conditions. In the ninth condition described above, the second opposing mass of the second opposing beam electrode is different from the first opposing mass of the first opposing beam electrode. In the above-mentioned condition 10, at least a portion of the second opposing material included in the second opposing beam electrode is different from at least a portion of the first opposing material included in the first opposing beam electrode, In the 11th condition, the second opposing thickness of the second opposing beam electrode along the third direction is different from the first opposing thickness of the first opposing beam electrode along the third direction. In the 12th condition described above, the second opposing size of the second opposing hole included in the second opposing beam electrode is different from the first opposing size of the first opposing hole included in the first opposing beam electrode. In the 13th condition described above, the second opposing density of the second opposing hole is different from the first opposing density of the first opposing hole. In the 14th condition above, the second number of opposing holes in the second opposing hole is different from the first number of opposing holes in the first opposing hole, or the second opposing beam electrode includes the second opposing hole, and the first opposing beam electrode does not include the first opposing hole. In the above-described condition 15, the second opposing layer structure of the second opposing beam electrode differs from the first opposing layer structure of the first opposing beam electrode. The sensor according to configuration 17 or 18, wherein, in the 16th condition, the second opposing shape of the second opposing beam electrode is different from the first opposing shape of the first opposing beam electrode.
[0117] According to the embodiment, sensors and electronic devices capable of improving characteristics are provided.
[0118] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element included in the sensor, such as the substrate, support part, first member, and control unit, is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known range to implement the present invention and obtain similar effects.
[0119] Furthermore, combinations of two or more elements from any of the specific examples, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.
[0120] Furthermore, all sensors and electronic devices that a person skilled in the art can implement by appropriately modifying the design based on the sensors and electronic devices described above as embodiments of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.
[0121] Furthermore, within the scope of the concept of the present invention, a person skilled in the art could conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of the present invention.
[0122] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]
[0123] 10E: Element part; 10S: First fixed part; 10a~10c: First~Third fixed areas; 20M: Movable part; 21B: First movable base; 21C: First movable connection part; 21M: First movable intermediate part; 21W: First movable hammer part; 21a: First movable part; 28S: First support part; 28a~28c: First~Third support areas; 31, 32: First and second beams; 31A, 32A: First and second opposing beams; 31AE, 32AE: First and second opposing beam electrodes; 31AEc, 32AEc: First and second opposing extension connection parts; 31AEh, 32AEh: First and second opposing holes. 31AEx, 32AEx: First and second oppositely extending portions; 31Aa, 32Aa: First and second oppositely extending portions; 31Ab, 32Ab: First and second oppositely extending portions; 31Ac, 32Ac: First and second oppositely extending intermediate portions; 31E, 32E: First and second beam electrodes; 31Ec, 32Ec: First and second extending portions; 31Eh, 32Eh: First and second holes; 31Ex, 32Ex: First and second extending portions; 31a, 32a: First and second portions; 31b, 32b: First and second other portions; 31c, 32c: First and second intermediate portions; 50S: Substrate; 51AE, 52AE: First and second oppositely fixed electrodes. 51E, 52E: 1st and 2nd fixed electrode, 70: Control part, 110, 110a~110g, 111~117, 120~123, 120a~123a: センサ, 170: Loop control part, 180: Loop, 185: Actuating device, 310: Electronic device, 400:Road, 410:Surface, 420:Transmission and reception department, 430:センサ, 440:Bridge foot, 450:Main girder, 460:Bridge, 470:River, D1~D3:1st~3rd direction, S1:Signal, g1:1st gap, t31AE, t31AE: 1st and 2nd, t31E, t32E: 1st and 2nd thickness, w21B: 1st movable base section, w21C: 1st movable joint section, w21M: 1st movable middle section, w21W: 1st movable hammer section, w21a: 1st movable section.
Claims
1. A first beam, the first beam including a first portion, a first other portion, and a first intermediate portion between the first portion and the first other portion, wherein the direction from the first portion to the first other portion is along the first direction, The first beam electrode connected to the first intermediate portion, A second beam, the second beam including a second portion, a second other portion, and a second intermediate portion between the second portion and the second other portion, wherein the direction from the second portion to the second other portion is along the first direction, The second beam electrode connected to the aforementioned second intermediate portion, It comprises an element section including, The second direction from the first intermediate portion to the first beam electrode intersects with the first direction. The direction from the second intermediate portion to the second beam electrode is along the second direction, The first beam electrode and the second beam electrode satisfy at least one of the first, second, third, fourth, fifth, sixth, seventh, and eighth conditions. In the first condition described above, the second mass of the second beam electrode is different from the first mass of the first beam electrode, In the second condition described above, at least a portion of the second material included in the second beam electrode is different from at least a portion of the first material included in the first beam electrode, In the third condition, the second thickness of the second beam electrode along the third direction is different from the first thickness of the first beam electrode along the third direction, and the third direction intersects with a plane including the first and second directions. In the fourth condition described above, the second size of the second hole included in the second beam electrode is different from the first size of the first hole included in the first beam electrode. In the fifth condition, the second density of the second pore is different from the first density of the first pore. In the sixth condition, the second number of the second holes is different from the first number of the first holes, or the second beam electrode includes the second holes, and the first beam electrode does not include the first holes. In the seventh condition described above, the second layer structure of the second beam electrode differs from the first layer structure of the first beam electrode. In the eighth condition, the second shape of the second beam electrode is different from the first shape of the first beam electrode. Substrate and, A first fixing part fixed to the base, Furthermore, The element portion further includes a first support portion supported by the first fixed portion, The direction from the base to the first fixing part is along the third direction, The first part and the second part are connected to the first support part, A first gap is provided between the substrate and the element portion. The direction from the second beam to the first beam is along the second direction, The aforementioned element section is The first opposing beam electrode connected to the first intermediate portion, The second opposing beam electrode connected to the second intermediate portion, It further includes, The first beam is located between the first opposing beam electrode and the first beam electrode in the second direction. The second beam is a sensor located between the second opposing beam electrode and the second beam electrode in the second direction.
2. The element portion further includes a movable member supported by the first fixed portion, The movable member includes a first movable part, The sensor according to claim 1, wherein the first other part and the second other part are connected to the first movable part.
3. The first opposing beam electrode and the second opposing beam electrode satisfy at least one of the 9th, 10th, 11th, 12th, 13th, 14th, 15th, and 16th conditions. In the ninth condition described above, the second opposing mass of the second opposing beam electrode is different from the first opposing mass of the first opposing beam electrode, In the tenth condition described above, at least a portion of the second opposing material included in the second opposing beam electrode is different from at least a portion of the first opposing material included in the first opposing beam electrode, In the 11th condition, the second opposing thickness of the second opposing beam electrode along the third direction is different from the first opposing thickness of the first opposing beam electrode along the third direction. In the 12th condition, the second opposing size of the second opposing hole included in the second opposing beam electrode is different from the first opposing size of the first opposing hole included in the first opposing beam electrode. In the 13th condition, the second opposing density of the second opposing hole is different from the first opposing density of the first opposing hole. In the 14th condition, the second number of opposing holes in the second opposing hole is different from the first number of opposing holes in the first opposing hole, or the second opposing beam electrode includes the second opposing hole, and the first opposing beam electrode does not include the first opposing hole. In the 15th condition described above, the second opposing layer structure of the second opposing beam electrode differs from the first opposing layer structure of the first opposing beam electrode. The sensor according to claim 1, wherein, in the sixteenth condition, the second opposing shape of the second opposing beam electrode is different from the first opposing shape of the first opposing beam electrode.
4. A first beam, the first beam including a first portion, a first other portion, and a first intermediate portion between the first portion and the first other portion, wherein the direction from the first portion to the first other portion is along a first direction, The first beam electrode connected to the first intermediate portion, A second beam, the second beam including a second portion, a second other portion, and a second intermediate portion between the second portion and the second other portion, wherein the direction from the second portion to the second other portion is along the first direction, The second beam electrode connected to the aforementioned second intermediate portion, It comprises an element section including, The second direction from the first intermediate portion to the first beam electrode intersects with the first direction. The direction from the second intermediate portion to the second beam electrode is along the second direction, The first beam electrode and the second beam electrode satisfy at least one of the first, second, third, fourth, fifth, sixth, seventh, and eighth conditions. In the first condition described above, the second mass of the second beam electrode is different from the first mass of the first beam electrode, In the second condition described above, at least a portion of the second material included in the second beam electrode is different from at least a portion of the first material included in the first beam electrode, In the third condition, the second thickness of the second beam electrode along the third direction is different from the first thickness of the first beam electrode along the third direction, and the third direction intersects with a plane including the first and second directions. In the fourth condition described above, the second size of the second hole included in the second beam electrode is different from the first size of the first hole included in the first beam electrode. In the fifth condition, the second density of the second pore is different from the first density of the first pore. In the sixth condition, the second number of the second holes is different from the first number of the first holes, or the second beam electrode includes the second holes, and the first beam electrode does not include the first holes. In the seventh condition described above, the second layer structure of the second beam electrode differs from the first layer structure of the first beam electrode. In the eighth condition, the second shape of the second beam electrode is different from the first shape of the first beam electrode. Substrate and, A first fixing part fixed to the base, Furthermore, The element portion further includes a first support portion supported by the first fixed portion, The direction from the base to the first fixing part is along the third direction, The first part and the second part are connected to the first support part, A first gap is provided between the substrate and the element portion. The position of the first other part in the first direction is between the position of the first part in the first direction and the position of the second part in the first direction. The position of the second other part in the first direction is between the position of the first other part in the first direction and the position of the second part in the first direction.
5. The element portion further includes a movable member supported by the first fixed portion, The movable member includes a first movable part, The first other part and the second other part are connected to the first movable part, The first support portion includes a first support region, a second support region, and a third support region. The first portion is supported in the first support region, The second portion is supported by the second support region, The sensor according to claim 4, wherein the first movable part is supported in the third support area.
6. Control unit and The first fixed electrode and the second fixed electrode are fixed to the substrate, Furthermore, The first fixed electrode faces the first beam electrode, The second fixed electrode faces the second beam electrode, The control unit is capable of applying a first AC signal between the first fixed electrode and the first beam electrode. The sensor according to any one of claims 1 to 5, wherein the control unit is capable of applying the first AC signal between the second fixed electrode and the second beam electrode.
7. The sensor according to claim 1, A circuit control unit capable of controlling the circuit based on the signal obtained from the sensor, An electronic device equipped with [a specific feature / feature].