Polyimide films, high-frequency circuit boards, flexible electronic device substrates

Abstract

Provided is a polyimide film comprising a polyimide obtained by reacting a tetracarboxylic acid ingredient with a diamine ingredient including 4,4"-diamino-p-terphenyl, the polyimide film having a glass transition temperature higher than 290°C and having a coefficient of linear expansion within the 50-200°C temperature range of 10 ppm / K or less.

Claims

1. A polyimide film comprising a polyimide obtained by reacting a tetracarboxylic acid component with a diamine component, wherein the polyimide is obtained using any of the following compositions A, D to F as the tetracarboxylic acid component and the diamine component, and the polyimide film has a glass transition temperature of 300°C or higher and a coefficient of linear expansion of 6 ppm / K or less in the temperature range of 50°C to 200°C. <Composition A> The tetracarboxylic acid component contains 10 mol% to 30 mol% of 3,3',4,4'-biphenyltetracarboxylic acid dianhydride (s-BPDA) and 90 mol% to 70 mol% of pyromellitic acid dianhydride (PMDA), and the diamine component contains 100 mol% of 4,4''-diamino-p-terphenyl (DATP). <Composition D> The tetracarboxylic acid component contains 70 to 90 mol% pyromellitic dianhydride (PMDA) and 30 to 10 mol% 4,4'-oxydiphthalic acid dianhydride (ODPA), and the diamine component contains 50 mol% or more 4,4''-diamino-p-terphenyl (DATP). <Composition E> The tetracarboxylic acid component contains 30 to 40 mol% of 3,3',4,4'-biphenyltetracarboxylic acid dianhydride (s-BPDA), 20 to 40 mol% of pyromellitic acid dianhydride (PMDA), and 20 to 40 mol% of 4,4'-oxydiphthalic acid dianhydride (ODPA), and the diamine component contains 50 mol% or more of 4,4''-diamino-p-terphenyl (DATP). <Composition F> The tetracarboxylic acid component contains 10 mol% to 30 mol% of 3,3',4,4'-biphenyltetracarboxylic acid dianhydride (s-BPDA) and 90 mol% to 70 mol% of pyromellitic acid dianhydride (PMDA), and the diamine component contains 10 mol% to 70 mol% of 4,4''-diamino-p-terphenyl (DATP) and 90 mol% to 30 mol% of p-phenylenediamine (PPD).

2. Furthermore, the polyimide film according to claim 1, wherein the saturated water absorption rate is 1% or less.

3. Furthermore, the water vapor transmission coefficient is 0.1 g / mm / (m ２ The polyimide film according to claim 1, wherein the h time is 24 hours or less.

4. Furthermore, the polyimide film according to claim 1, wherein the coefficient of linear expansion in the temperature range of 50°C to 500°C is -1.0 ppm / K or more and less than 0.5 ppm / K.

5. A polyimide precursor solution for producing a polyimide film according to any one of claims 1 to 4.

6. A polyimide film for metal lamination, comprising a metal adhesive layer provided on a polyimide film according to any one of claims 1 to 4.

7. A polyimide metal laminate comprising a metal layer laminated on a polyimide film for metal lamination as described in claim 6.

8. A high-frequency circuit board using the polyimide metal laminate described in claim 7.

9. A laminate comprising a polyimide film according to any one of claims 1 to 4 and a glass substrate.

10. A flexible electronic device substrate comprising a polyimide film according to any one of claims 1 to 4 or a laminate according to claim 9.

11. A flexible electronic device substrate having an element on a flexible electronic device substrate according to claim 10.

12. A method for manufacturing a flexible electronic device according to claim 11, A coating step of coating a carrier substrate with the polyimide precursor solution described in claim 8, A film forming step involves heat-treating a carrier substrate coated with the polyimide precursor solution to form a polyimide film. A device formation step of forming an element on the polyimide film, A peeling step in which the polyimide film on which the element is formed is peeled off from the carrier substrate, A method for manufacturing a flexible electronic device having [a specific feature].

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