Method for controlling the orientation of transition metal chalcogenide thin films, manufacturing method, manufacturing apparatus, and flexible substrate

Abstract

To provide a technology capable of controlling an orientation direction of a transition metal chalcogenide layer with simple control on a film deposition condition.SOLUTION: A method for controlling orientation of a transition metal chalcogenide thin film includes a step of controlling an orientation direction of a transition metal chalcogenide layer that is formed at a surface of a substrate by controlling an amount of a chalcogen material to be supplied per unit time basis to a transition metal layer of the surface of the substrate.SELECTED DRAWING: Figure 1

Claims

1. The method includes controlling the orientation direction of the transition metal chalcogenide layer formed on the surface of the substrate by controlling the amount of chalcogen material supplied per unit time to the transition metal layer on the surface of the substrate, The chalcogen material is at least one of sulfur and tellurium. In the aforementioned control step, By reducing the amount of the chalcogen material supplied to the transition metal layer per unit time to a predetermined amount, the orientation direction of the formed transition metal chalcogenide layer is controlled to be substantially parallel to the surface of the substrate. By increasing the amount of the chalcogen material supplied to the transition metal layer per unit time to a predetermined amount, the orientation direction of the formed transition metal chalcogenide layer is controlled to be substantially perpendicular to the surface of the substrate. In the aforementioned control step, A method for controlling the orientation of a transition metal chalcogenide thin film, wherein the transition metal layer is controlled to form regions where the amount of chalcogen material supplied per unit time is less than a predetermined amount and regions where the amount is greater than a predetermined amount.

2. The method includes the step of supplying a chalcogen material to the surface of a substrate having a transition metal layer, and forming a transition metal chalcogenide layer on the surface of the substrate, In the step of forming, the orientation direction of the transition metal chalcogenide layer is controlled by the method for controlling the orientation of a transition metal chalcogenide thin film according to claim 1. A method for producing a transition metal chalcogenide thin film.

3. In the above forming step, a transition metal chalcogenide layer oriented substantially parallel to the surface of the substrate and a transition metal chalcogenide layer oriented substantially perpendicular to the surface of the substrate are formed on the surface of one of the substrates. A method for producing a transition metal chalcogenide thin film according to claim 2.

4. A method for producing a transition metal chalcogenide thin film, The method includes the step of supplying a chalcogen material to the surface of a substrate having a transition metal layer, and forming a transition metal chalcogenide layer on the surface of the substrate, In the step of forming the transition metal chalcogenide thin film, the orientation direction of the transition metal chalcogenide layer is controlled by the method for controlling the orientation of the transition metal chalcogenide thin film. In the forming step described above, a transition metal chalcogenide layer oriented substantially parallel to the surface of the substrate and a transition metal chalcogenide layer oriented substantially perpendicular to the surface of the substrate are formed on the surface of one of the substrates. The method for controlling the orientation of the transition metal chalcogenide thin film includes the step of controlling the orientation direction of the transition metal chalcogenide layer formed on the surface of the substrate by controlling the amount of chalcogen material supplied per unit time to the transition metal layer on the surface of the substrate, A method for producing a transition metal chalcogenide thin film, wherein the chalcogen material is at least one of sulfur and tellurium.

5. The thickness of the transition metal layer is 100 nm or more. A method for producing a transition metal chalcogenide thin film according to any one of claims 2 to 4.

6. The substrate is a transition metal substrate, or a silicon substrate or sapphire substrate having a transition metal layer on its surface. A method for producing a transition metal chalcogenide thin film according to any one of claims 2 to 4.

7. In the forming step, a gas containing a chalcogen material is supplied to the surface of the substrate. A method for producing a transition metal chalcogenide thin film according to any one of claims 2 to 4.

8. The step of heat-treating the transition metal layer in a hydrogen atmosphere before the forming step further includes, A method for producing a transition metal chalcogenide thin film according to any one of claims 2 to 4.

9. A method for producing a transition metal chalcogenide thin film, The method includes the step of supplying a chalcogen material to the surface of a substrate having a transition metal layer, and forming a transition metal chalcogenide layer on the surface of the substrate, In the step of forming the transition metal chalcogenide thin film, the orientation direction of the transition metal chalcogenide layer is controlled by the method for controlling the orientation of the transition metal chalcogenide thin film. The process further includes a step of heat-treating the transition metal layer in a hydrogen atmosphere prior to the forming step, The method for controlling the orientation of the transition metal chalcogenide thin film includes the step of controlling the orientation direction of the transition metal chalcogenide layer formed on the surface of the substrate by controlling the amount of chalcogen material supplied per unit time to the transition metal layer on the surface of the substrate, A method for producing a transition metal chalcogenide thin film, wherein the chalcogen material is at least one of sulfur and tellurium.

10. The method for producing a transition metal chalcogenide thin film according to claim 8, wherein in the heat treatment step, the heat treatment is performed at a temperature that causes the transition metal layer to recrystallize.

11. The method for producing a transition metal chalcogenide thin film according to claim 9, wherein in the step of heat treatment, the heat treatment is performed at a temperature that causes the transition metal layer to recrystallize.

12. A chalcogen material supply unit that supplies chalcogen material to the transition metal layer on the surface of the substrate, The system includes a chalcogen material control unit that controls the amount of chalcogen material supplied per unit time, The chalcogen material control unit is By reducing the amount of the chalcogen material supplied to the transition metal layer per unit time to a predetermined amount, the orientation direction of the formed transition metal chalcogenide layer is controlled to be substantially parallel to the surface of the substrate. By increasing the amount of the chalcogen material supplied to the transition metal layer per unit time to a predetermined amount, the orientation direction of the formed transition metal chalcogenide layer is controlled to be substantially perpendicular to the surface of the substrate. In the transition metal layer, the amount of chalcogen material supplied per unit time is controlled to form regions where the amount is less than a predetermined amount and regions where the amount is greater than a predetermined amount. The chalcogen material is at least one of sulfur and tellurium. A manufacturing apparatus for transition metal chalcogenide thin films.

13. The apparatus for producing a transition metal chalcogenide thin film according to claim 12, further comprising a film deposition section for heat-treating a substrate having the transition metal layer while supplying the chalcogen material by vapor phase chemical growth, organometallic vapor phase growth, plasma vapor phase chemical growth, sulfidation, or sputtering, thereby forming a transition metal chalcogenide thin film.

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