Semiconductor manufacturing equipment and semiconductor manufacturing method
The semiconductor manufacturing apparatus uses a press heater with multiple temperature zones to enhance adhesion and facilitate efficient peeling of the protective tape from the wafer by exploiting thermal expansion differences, addressing the adhesive force insufficiency in conventional methods.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Filing Date
- 2023-02-24
- Publication Date
- 2026-07-03
AI Technical Summary
Conventional methods fail to efficiently peel a protective tape from a wafer due to insufficient adhesive force between the peeling tape and the protective tape, leading to incomplete removal of the protective tape from the wafer surface.
A semiconductor manufacturing apparatus with a press heater having a contact portion with multiple temperature zones, including high-temperature and low-temperature sections, is used to heat the release tape and protective tape differentially, leveraging thermal expansion differences to enhance adhesion and facilitate efficient peeling.
The differential heating and thermal expansion of the release tape and protective tape increase the adhesive area, allowing for effective peeling of the protective tape from the wafer surface, improving the peeling process.
Smart Images
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Abstract
Description
Technical Field
[0001] The technology disclosed in this specification relates to semiconductor manufacturing technology.
Background Art
[0002] As a conventional technology for peeling a protective tape from a wafer, there is a technology in which a peeling tape is heat-welded to the protective tape and the protective tape is peeled from the wafer by winding up the peeling tape (see, for example, Patent Document 1).
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] In the prior art, a peeling tape is attached to a protective tape. Therefore, when the adhesive force (tackiness) between the peeling tape and the protective tape is weaker than the adhesive force (tackiness) between the protective tape and the wafer surface, only the peeling tape is peeled off and the protective tape on the wafer surface cannot be peeled off.
[0005] The technology disclosed in this specification has been made in view of the problems described above, and is a technology for appropriately peeling a protective tape.
Means for Solving the Problems
[0006] A semiconductor manufacturing apparatus according to a first aspect of the technology disclosed in this specification comprises a semiconductor wafer on which a protective tape is attached to the upper surface, a release tape for contacting the protective tape, and a press heater having a contact portion that contacts the release tape, wherein the contact portion has a first high-temperature portion and a low-temperature portion, which are arranged sequentially from the outer periphery toward the center in a plan view of the semiconductor wafer, and the first high-temperature portion is set to a higher temperature than the low-temperature portion. The contact portion further comprises a second high-temperature portion, and in the contact portion, in a plan view of the semiconductor wafer, the first high-temperature portion, the low-temperature portion, and the second high-temperature portion are provided in order from the outer periphery to the center, the second high-temperature portion is set to a higher temperature than the low-temperature portion, the first high-temperature portion and the second high-temperature portion are set to a temperature of 160°C or higher and 200°C or lower, the low-temperature portion is set to a temperature of less than 160°C, and the first high-temperature portion, the low-temperature portion, and the second high-temperature portion are formed in an arc shape and a wavy shape in a plan view of the semiconductor wafer. . [Effects of the Invention]
[0007] According to at least a first aspect of the technology disclosed in this specification, the release tape and the protective tape are heated in a high-temperature section and a low-temperature section set to different temperatures, and the protective tape can be efficiently peeled off by utilizing the deflection of the release tape and the protective tape caused by the difference in their coefficients of thermal expansion.
[0008] Furthermore, the purposes, features, aspects, and advantages related to the technology disclosed in this specification will become even clearer from the detailed description and accompanying drawings provided below. [Brief explanation of the drawing]
[0009] [Figure 1] This figure schematically shows an example of the configuration of a semiconductor manufacturing apparatus according to an embodiment. [Figure 2] This figure schematically shows an example of the configuration of a semiconductor manufacturing apparatus according to an embodiment. [Figure 3] This figure shows an example of the configuration of the contact area of a press heater. [Figure 4] This figure shows another example of the configuration of the contact area of a press heater. [Figure 5] This is a flowchart showing an example of a semiconductor manufacturing method according to an embodiment. [Figure 6] This is a plan view showing an example of the contact area between the press heater and the release tape. [Figure 7] This figure schematically shows an example of the configuration of the contact portion of a press heater in a semiconductor manufacturing apparatus according to an embodiment. [Figure 8] It is a diagram schematically showing an example of the configuration of the contact portion of the press heater in a semiconductor manufacturing apparatus according to an embodiment. [Figure 9] It is a diagram schematically showing an example of the configuration of the contact portion of the press heater in a semiconductor manufacturing apparatus according to an embodiment. [Figure 10] It is a diagram schematically showing an example of the configuration of the contact portion of the press heater in a semiconductor manufacturing apparatus according to an embodiment. [Figure 11] It is a diagram showing an example before welding of the press heater shown in FIGS. 9 and 10. [Figure 12] It is a diagram showing an example during welding of the press heater shown in FIGS. 9 and 10. [Figure 13] It is a diagram showing an example after welding of the press heater shown in FIGS. 9 and 10. [Figure 14] It is a diagram schematically showing another example of the configuration of the contact portion of the press heater in a semiconductor manufacturing apparatus according to an embodiment. [Figure 15] It is a diagram schematically showing another example of the configuration of the contact portion of the press heater in a semiconductor manufacturing apparatus according to an embodiment. [Figure 16] It is a diagram showing an example before welding of the press heater shown in FIGS. 14 and 15. [Figure 17] It is a diagram showing an example during welding of the press heater shown in FIGS. 14 and 15. [Figure 18] It is a diagram showing an example after welding of the press heater shown in FIGS. 14 and 15.
Mode for Carrying Out the Invention
[0010] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, although detailed features and the like are also shown for the purpose of explaining the technology, they are merely examples, and not all of them are necessarily essential features for the embodiments to be feasible.
[0011] Note that the drawings are shown schematically, and for the sake of convenience of explanation, omissions or simplifications of the configuration may be made in the drawings as appropriate. Also, the mutual relationships of the sizes and positions of the configurations shown in different drawings are not necessarily accurately described and may be changed as appropriate. Also, in drawings such as a plan view that is not a sectional view, hatching may be added to facilitate understanding of the content of the embodiment.
[0012] Also, in the descriptions shown below, the same reference numerals are attached to and illustrated for similar components, and their names and functions are also assumed to be the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.
[0013] Also, in the descriptions described in the specification of the present application, when a certain component is described as "comprising", "including", or "having", etc., it is not an exclusive expression that excludes the existence of other components unless otherwise specified.
[0014] Also, in the descriptions described in the specification of the present application, even when ordinal numbers such as "first" or "second" are used, these terms are used for convenience to facilitate understanding of the content of the embodiment, and the content of the embodiment is not limited to the order or the like that may be caused by these ordinal numbers.
[0015] Also, in the descriptions described in the specification of the present application, expressions such as "the positive direction of the... axis" or "the negative direction of the... axis" mean that the direction along the arrow of the... axis shown is the positive direction, and the direction opposite to the arrow of the... axis shown is the negative direction.
[0016] Also, in the descriptions described in the specification of the present application, even when terms meaning specific positions or directions such as "up", "down", "left", "right", "side", "bottom", "front", or "back" are used, these terms are used for convenience to facilitate understanding of the content of the embodiment and have no relation to the position or direction when the embodiment is actually implemented.
[0017] Furthermore, in the descriptions contained herein, when a "top surface of..." or "bottom surface of..." is used, it includes not only the top surface or bottom surface of the component in question itself, but also the state in which other components are formed on the top surface or bottom surface of the component in question. That is, for example, when it is stated that "B is provided on the top surface of A", this does not preclude the presence of another component "C" between A and B.
[0018] <First Embodiment> The semiconductor manufacturing apparatus and semiconductor manufacturing method according to this embodiment will be described below.
[0019] <Regarding the configuration of semiconductor manufacturing equipment> Figures 1 and 2 are schematic diagrams illustrating an example of the configuration of a semiconductor manufacturing apparatus according to this embodiment. As illustrated in Figures 1 and 2, the semiconductor manufacturing apparatus comprises an adsorption stage 1, a peeling head 2 provided opposite the adsorption stage 1, a press heater 3 attached to the peeling head 2, a peeling tape 4, and a roller 5 around which the peeling tape 4 is wound.
[0020] A semiconductor wafer 6 is mounted on the upper surface of the adsorption stage 1. The semiconductor wafer 6 is, for example, a wafer substrate for manufacturing semiconductor devices. Circuits are formed on the upper and lower surfaces of the semiconductor wafer 6, and the semiconductor wafer 6 ultimately becomes a semiconductor device such as an insulated gate bipolar transistor (i.e., IGBT), a metal-oxide-semiconductor field-effect transistor (i.e., MOSFET), or a diode.
[0021] The semiconductor wafer 6 is formed from a substrate material consisting of Si or a wide-bandgap semiconductor with a larger bandgap than Si. Examples of wide-bandgap semiconductors include silicon carbide, gallium nitride-based materials, gallium oxide-based materials, or diamond.
[0022] The size of a semiconductor wafer 6 is, for example, a thickness of 0.05 mm or more and 0.8 mm or less, and each size comes in varieties such as 4 inches, 5 inches, 6 inches, 8 inches, or 12 inches.
[0023] The adsorption stage 1 is provided with multiple adsorption pores, which hold the semiconductor wafer 6 by adsorption.
[0024] The semiconductor wafer 6 comprises a wafer body 8 and a protective tape 7 attached to the upper surface of the wafer body 8.
[0025] The protective tape 7 is attached to the upper surface of the semiconductor wafer 6 after the circuit pattern is formed during the semiconductor wafer manufacturing process. The protective tape 7 has a three-layer structure in which a base material, an intermediate layer, and an adhesive are stacked in that order. The adhesive side is attached to the upper surface of the semiconductor wafer 6 by intermolecular forces and anchoring effects.
[0026] A roller 5 is positioned above the suction stage 1 (see Figure 2). The release tape 4 is wrapped around the roller 5.
[0027] In this configuration, the release tape 4 is wound up by the roller 5, and at the same time the suction stage 1 moves, thereby allowing the protective tape 7, which is adhered to the release tape 4, to be peeled off from the wafer body 8.
[0028] The roller 5 may be driven by a stepping motor or servo motor, and may wind up the release tape 4 while detecting the load for winding up the release tape 4 with a detector or the like. Here, the winding load is the tensile force or torque when winding up the release tape 4.
[0029] The release tape 4 is a tape that adheres to the protective tape 7 and is used to peel the protective tape 7 from the wafer body 8. The release tape 4 has a two-layer structure consisting of a base material and an adhesive. The size of the release tape 4 varies depending on the size of the semiconductor wafer 6.
[0030] The press heater 3 is attached to the peeling head 2. The press heater 3 is temperature-controlled to a desired temperature suitable for the material composition of the protective tape 7, so as to peel the protective tape 7 from the wafer body 8 using the peeling tape 4. The tip of the press heater 3 is equipped with a contact portion 30 that contacts the semiconductor wafer 6 at multiple points.
[0031] Figure 3 shows an example of the configuration of the contact portion 30 of the press heater 3. As shown in the example in Figure 3, the contact portion 30 has one high-temperature portion 30A and one low-temperature portion 30B. The temperature of the low-temperature portion 30B is controlled to be lower than that of the high-temperature portion 30A. In Figure 3, the high-temperature portion 30A and the low-temperature portion 30B are arranged in order from the outer edge of the semiconductor wafer 6 toward the center.
[0032] Furthermore, to ensure a suitable temperature for the above-mentioned component composition, the high-temperature section 30A is controlled to a temperature range of, for example, 160°C or higher and 200°C or lower, while the low-temperature section 30B is controlled to a temperature range lower than that of the high-temperature section 30A, for example, below 160°C.
[0033] The contact portion 30 of the press heater 3 may have three or more high-temperature or low-temperature sections. For example, the sections may be arranged in the order of high-temperature section, low-temperature section, and high-temperature section from the outer periphery of the semiconductor wafer 6 towards the center.
[0034] Figure 4 shows another example of the configuration of the contact portion 31 of the press heater 3. As shown in the example in Figure 4, the contact portion 31 has one high-temperature portion 30A, one low-temperature portion 30B, and one high-temperature portion 30C. The high-temperature portion 30C may be temperature-controlled to the same temperature as the high-temperature portion 30A, or to a different temperature. The low-temperature portion 30B is temperature-controlled to be lower than the high-temperature portions 30A and 30C. In Figure 4, the high-temperature portion 30A, the low-temperature portion 30B, and the high-temperature portion 30C are arranged in that order, from the outer edge of the semiconductor wafer 6 toward the center.
[0035] Because the coefficients of linear expansion are different between the release tape 4 and the protective tape 7, a temperature difference can be created between the contact points of the press heater 3 (i.e., between the high-temperature section 30A, the low-temperature section 30B, and the high-temperature section 30C), which effectively causes the two heated tapes (release tape 4 and protective tape 7) to flex. This makes it easier to peel off the protective tape 7. In addition, the flexing of the two tapes increases the adhesive area between the release tape 4 and the protective tape 7, thereby improving the adhesion (stickiness) between the release tape 4 and the protective tape 7.
[0036] <Regarding semiconductor manufacturing methods> Next, a semiconductor manufacturing method according to this embodiment will be described with reference to Figure 5. Figure 5 is a flowchart showing an example of a semiconductor manufacturing method according to this embodiment.
[0037] First, the semiconductor wafer 6, with protective tape 7 attached to the wafer body 8, is transported to the suction stage 1 with the notch and orientation flat (orientation flat) aligned as necessary (step ST01). Next, the semiconductor wafer 6 is adsorbed onto the upper surface of the suction stage 1 (step ST02).
[0038] Next, a release tape 4 is placed on top of the adsorbed semiconductor wafer 6. Then, a release head 2, to which a heated press heater 3 is attached, is positioned above the release tape 4 on the outer edge of the semiconductor wafer 6.
[0039] As shown in Figure 6, the contact portion of the press heater 3 may be positioned on the outer periphery of the semiconductor wafer 6 that is diagonally opposite the notch or orientation flat 6A of the semiconductor wafer 6 (i.e., the outer periphery of the semiconductor wafer 6 located on the opposite side of the outer periphery of the semiconductor wafer 6 where the notch or orientation flat is formed), so as to face the protective tape 7. In this case, since the notch or orientation flat 6A is located diagonally opposite the contact portion of the press heater 3, it is possible to avoid the contact portion of the press heater 3, which serves as the starting point for peeling, overlapping with the notch or the like. Therefore, the contact area between the release tape 4 and the protective tape 7 at the contact portion of the press heater 3 can be secured. Here, Figure 6 is a plan view showing an example of the contact portion between the press heater 3 and the release tape 4.
[0040] Subsequently, as shown in Figure 1, the peeling head 2 descends in the negative Z-axis direction, causing the contact portion 30 of the press heater 3 to contact the peeling tape 4, and the peeling tape 4 is heat-sealed to the protective tape 7 of the semiconductor wafer 6 (step ST03).
[0041] After the release tape 4 is welded in place, the release tape 4 is rolled up by the roller 5, as shown in the example in Figure 2. At the same time, the suction stage 1 is moved in the positive X-axis direction (step ST04). By doing so, the protective tape 7 is peeled off from the wafer body 8 (step ST05).
[0042] During peeling, by peeling in the direction where the high-temperature and low-temperature sections of the contact area of the press heater 3 are aligned (for example, the negative X-axis direction in Figure 3), the peeling starting point formed by the bending of the two tapes (release tape 4 and protective tape 7) can be used to efficiently peel the protective tape 7 from the wafer body 8. In addition, since the contact area between the two tapes increases as they bend, the adhesion force between them increases, making it easier to peel the protective tape 7 from the wafer body 8.
[0043] Furthermore, if the peeling starting point is set so that the notch or orientation flat is located diagonally opposite the contact portion of the press heater 3 (for example, as shown in Figure 6), peeling shall be performed in the direction toward the notch or orientation flat of the semiconductor wafer 6 from the position where the contact portion of the press heater 3 makes contact (for example, the negative X-axis direction in Figure 6).
[0044] In conventional technology, the press heater only had one temperature setting. As a result, the adhesion (stickiness) between the protective tape 7 attached to the wafer body 8 and the release tape 4 was low, and in some cases it was not possible to peel the protective tape 7 off the wafer body 8.
[0045] On the other hand, in this embodiment, as described above, the press heater 3 attached to the peeling head 2 has contact portions (high temperature portion 30A, low temperature portion 30B) with multiple temperature settings, which effectively forms a starting point for peeling the protective tape 7 from the wafer body 8, allowing the protective tape 7 to be peeled off properly. In addition, the adhesion force (stickiness) between the protective tape 7 and the release tape 4 is improved, allowing the protective tape 7 to be peeled off properly.
[0046] <Second Embodiment> A semiconductor manufacturing apparatus according to this embodiment will now be described. In the following description, components similar to those described in the embodiments described above will be denoted by the same reference numerals, and their detailed descriptions will be omitted as appropriate.
[0047] <Regarding the configuration of semiconductor manufacturing equipment> Figures 7 and 8 schematically show an example of the configuration of the contact portion of the press heater 3 in a semiconductor manufacturing apparatus according to this embodiment.
[0048] As shown in Figure 7, the contact portion 32 of the press heater 3 is equipped with a high-temperature portion 30D. In an XY plan view, the high-temperature portion 30D is provided in an arc shape that extends along the end of the contact portion 32 and is wavy in shape.
[0049] By forming it in this shape, the contact area between the high-temperature portion 30D and the release tape 4 (i.e., the area where the protective tape 7 and the release tape 4 are welded together) is increased, and the adhesive area between the protective tape 7 and the release tape 4 can be increased. Therefore, the adhesion force (stickiness) between the protective tape 7 and the release tape 4 is increased, and the protective tape 7 can be efficiently peeled off from the wafer body 8.
[0050] Furthermore, as illustrated in Figure 8, the contact portion 33 of the press heater 3 comprises a high-temperature portion 30D, a low-temperature portion 30E, and a high-temperature portion 30F. The high-temperature portion 30D, low-temperature portion 30E, and high-temperature portion 30F are arranged in the negative X-axis direction in order from the end of the contact portion 33. In an XY plane view, the high-temperature portion 30D, low-temperature portion 30E, and high-temperature portion 30F are each provided extending in an arc shape along the end of the contact portion 33 and fluctuating in a wavy line shape. The high-temperature portion 30F may be temperature-controlled to the same temperature as the high-temperature portion 30D, or it may be temperature-controlled to a different temperature. The low-temperature portion 30E is temperature-controlled to be lower than the high-temperature portions 30D and 30F.
[0051] By forming it in this shape, the contact area between the high-temperature section 30D, the low-temperature section 30E, and the high-temperature section 30F and the release tape 4 (i.e., the area where the protective tape 7 and the release tape 4 are welded together) is increased, and the adhesive area between the protective tape 7 and the release tape 4 can be increased. Therefore, the adhesion force (stickiness) between the protective tape 7 and the release tape 4 is increased, and the protective tape 7 can be efficiently peeled off from the wafer body 8.
[0052] <Third Embodiment> A semiconductor manufacturing apparatus according to this embodiment will now be described. In the following description, components similar to those described in the embodiments described above will be denoted by the same reference numerals, and their detailed descriptions will be omitted as appropriate.
[0053] <Regarding the configuration of semiconductor manufacturing equipment> Figures 9 and 10 schematically show an example of the configuration of the contact portion of the press heater 3 in a semiconductor manufacturing apparatus according to this embodiment. In Figure 10, the end of the contact portion of the press heater 3 in Figure 9 is shown in an enlarged view.
[0054] As illustrated in Figures 9 and 10, the contact portion 34 of the press heater 3 includes a high-temperature portion 30G. The high-temperature portion 30G extends in the Y-axis direction and has multiple rounded protrusions 300 formed at the end that contacts the release tape 4.
[0055] By forming it in this shape, the round protrusions 300 bite into the release tape 4 and the protective tape 7, increasing the contact area between the high-temperature section 30G and the release tape 4 (i.e., the area where the protective tape 7 and the release tape 4 are welded together), thereby increasing the adhesive area between the protective tape 7 and the release tape 4. As a result, the adhesion force (stickiness) between the protective tape 7 and the release tape 4 is increased, and the protective tape 7 can be efficiently peeled off from the wafer body 8.
[0056] Figures 11, 12, and 13 show examples of protective tape 7 and release tape 4 welded with the press heater 3 shown in Figures 9 and 10.
[0057] As shown in Figure 11, the release tape 4 is positioned on the upper surface of the protective tape 7 attached to the upper surface of the wafer body 8. The protrusion 300 of the high-temperature section 30G is positioned on the upper surface of this release tape 4.
[0058] Next, as shown in Figure 12, the high-temperature portion 30G is pressed against the release tape 4, and the projection 300 of the high-temperature portion 30G pushes the release tape 4 in, and further into the interior of the protective tape 7.
[0059] Next, as shown in Figure 13, when the projection 300 of the high-temperature portion 30G separates from the release tape 4 and the protective tape 7, a recess 300A is formed where the projection 300 of the high-temperature portion 30G was inserted.
[0060] This allows the protrusions 300 of the high-temperature section 30G to be embedded in the release tape 4 and the protective tape 7 when the release tape 4 is welded to the protective tape 7 of the semiconductor wafer 6 using the press heater 3. As a result, the adhesive area between the protective tape 7 and the release tape 4 increases, improving the adhesion (stickiness) between them.
[0061] Figures 14 and 15 schematically show other examples of the configuration of the contact portion of the press heater 3 in the semiconductor manufacturing apparatus according to this embodiment. In Figure 15, the end of the contact portion of the press heater 3 in Figure 14 is shown in an enlarged view.
[0062] As illustrated in Figures 14 and 15, the contact portion 35 of the press heater 3 includes a high-temperature portion 30H. The high-temperature portion 30H extends in the Y-axis direction and has a rounded projection 302 formed at the end that contacts the release tape 4. The projection 302 further has a broad spherical portion 304 at its end (keyhole shape).
[0063] By forming it in this shape, the spherical portion 304 of the projection 302 bites into the release tape 4 and the protective tape 7, increasing the contact area between the high-temperature portion 30H and the release tape 4 (i.e., the area where the protective tape 7 and the release tape 4 are welded together), thereby increasing the adhesive area between the protective tape 7 and the release tape 4. As a result, the adhesion force (stickiness) between the protective tape 7 and the release tape 4 is increased, and the protective tape 7 can be efficiently peeled off from the wafer body 8.
[0064] Figures 16, 17, and 18 show examples of protective tape 7 and release tape 4 welded with the press heater 3 shown in Figures 14 and 15.
[0065] As shown in Figure 16, the release tape 4 is positioned on the upper surface of the protective tape 7 attached to the upper surface of the wafer body 8. The protrusion 302 of the high-temperature portion 30H is positioned on the upper surface of this release tape 4.
[0066] Next, as shown in Figure 17, the high-temperature portion 30H is pressed against the release tape 4, and the spherical portion 304 of the projection 302 of the high-temperature portion 30H pushes the release tape 4 in, and further into the interior of the protective tape 7.
[0067] Next, as shown in Figure 18, when the projection 302 of the high-temperature portion 30H separates from the release tape 4 and the protective tape 7, a recess 302A is formed where the spherical portion 304 of the projection 302 of the high-temperature portion 30H was inserted.
[0068] In this way, when the release tape 4 is welded to the protective tape 7 of the semiconductor wafer 6 using the press heater 3, the spherical portion 304 of the projection 302 of the high-temperature section 30H can be made to bite into the release tape 4 and the protective tape 7. Then, as the protective tape 7, which was heated during pressing, cools, it expands and contracts, and the release tape 4 catches on the recess 302A (the biting portion of the spherical portion 304). As a result, the release tape 4 becomes difficult to peel off the protective tape 7. Consequently, the adhesive area between the protective tape 7 and the release tape 4 increases, and the adhesion (stickiness) between them is improved.
[0069] <Regarding the effects resulting from the multiple embodiments described above> Next, examples of the effects produced by the multiple embodiments described above will be shown. In the following description, the effects will be described based on the specific configurations illustrated in the multiple embodiments described above, but they may be replaced with other specific configurations illustrated in this specification to the extent that similar effects are produced. That is, for convenience, in the following, only one of the corresponding specific configurations may be described as representative, but the specific configuration described as representative may be replaced with other corresponding specific configurations.
[0070] Furthermore, such substitutions may be made across multiple embodiments. That is, the respective configurations exemplified in different embodiments may be combined to produce similar effects.
[0071] According to the embodiment described above, the semiconductor manufacturing apparatus comprises a release tape 4 and a press heater 3. The release tape 4 contacts the semiconductor wafer 6, on which a protective tape 7 is attached to the upper surface, via the protective tape 7. The press heater 3 has a contact portion 30 (or contact portion 31, contact portion 33) that contacts the release tape 4. The contact portion 30 has a first high-temperature portion and a low-temperature portion 30B (or low-temperature portion 30E) which are arranged sequentially from the outer periphery to the center in a plan view of the semiconductor wafer 6. Here, the first high-temperature portion corresponds to, for example, a high-temperature portion 30A or a high-temperature portion 30D. When the contact portion 30 contacts the release tape 4, the high-temperature portion 30A is set to a higher temperature than the low-temperature portion 30B.
[0072] With this configuration, the release tape 4 and protective tape 7 are heated in high-temperature and low-temperature sections set to different temperatures, and the bending of the release tape 4 and protective tape 7 caused by the difference in their coefficients of thermal expansion can be utilized to efficiently peel the protective tape 7 from the wafer body 8. In addition, since the contact area between the release tape 4 and protective tape 7 increases as they bend, the adhesion between them is increased, making it easier to peel the protective tape 7 from the wafer body 8.
[0073] Furthermore, the same effect can be achieved even if other configurations exemplified in this specification are added to the above configuration as appropriate, that is, if other configurations in this specification that are not mentioned as the above configuration are added as appropriate.
[0074] Furthermore, according to the embodiments described above, the semiconductor manufacturing apparatus has a contact section 31 (or contact section 33) that includes a second high-temperature section. Here, the second high-temperature section corresponds to, for example, a high-temperature section 30C or a high-temperature section 30F. In the contact section 31, a high-temperature section 30A, a low-temperature section 30B, and a high-temperature section 30C are provided in order from the outer edge to the center when viewed in plan with respect to the semiconductor wafer 6. In the contact section 33, a high-temperature section 30D, a low-temperature section 30E, and a high-temperature section 30F are provided in order from the outer edge to the center when viewed in plan with respect to the semiconductor wafer 6. Here, the high-temperature section 30C (or high-temperature section 30F) is set to a higher temperature than the low-temperature section 30B (or low-temperature section 30E). With this configuration, the release tape 4 and protective tape 7 are heated in contact areas arranged in the order of high temperature, low temperature, and high temperature, and the deflection of the release tape 4 and protective tape 7 caused by the difference in their coefficients of thermal expansion can be used to efficiently peel the protective tape 7 from the wafer body 8.
[0075] Furthermore, according to the embodiment described above, the high-temperature section 30A (or high-temperature section 30D) and the high-temperature section 30C (or high-temperature section 30F) are set to a temperature of 160°C or higher and 200°C or lower. The low-temperature section 30B (or low-temperature section 30E) is set to a temperature of less than 160°C. With this configuration, the release tape 4 and the protective tape 7 can be heated in the high-temperature and low-temperature sections set to different temperatures, thereby promoting the bending of the release tape 4 and the protective tape 7.
[0076] Furthermore, according to the embodiments described above, the high-temperature section 30D, the low-temperature section 30E, and the high-temperature section 30F are formed in an arc shape and a wavy shape in a plan view of the semiconductor wafer 6. With such a configuration, the contact area between the high-temperature section 30D, the low-temperature section 30E, and the high-temperature section 30F and the release tape 4 (i.e., the area where the protective tape 7 and the release tape 4 are welded together) can be increased, and the adhesive area between the protective tape 7 and the release tape 4 can be increased. Therefore, the adhesion force (adhesion force) between the protective tape 7 and the release tape 4 can be increased, and the protective tape 7 can be efficiently peeled off from the wafer body 8.
[0077] Furthermore, according to the embodiment described above, the semiconductor manufacturing apparatus includes a release tape 4 for contacting a semiconductor wafer 6 on which a protective tape 7 is attached to the upper surface, via the protective tape 7, and a press heater 3 having a contact portion 32 (or contact portion 33) that contacts the release tape 4. The contact portion 32 (or contact portion 33) is formed in an arc shape and a wavy shape in a plan view of the semiconductor wafer 6. With this configuration, the contact area between the high-temperature portion 30D and the release tape 4 (i.e., the area where the protective tape 7 and the release tape 4 are welded together) can be increased, and the adhesive area between the protective tape 7 and the release tape 4 can be increased. Therefore, the adhesion force (adhesion force) between the protective tape 7 and the release tape 4 can be increased, and the protective tape 7 can be efficiently peeled off from the wafer body 8.
[0078] Furthermore, according to the embodiment described above, the semiconductor manufacturing apparatus includes a release tape 4 for contacting a semiconductor wafer 6 on which a protective tape 7 is attached to the upper surface via the protective tape 7, and a press heater 3 having a contact portion 34 (or contact portion 35) that contacts the release tape 4. The contact portion 34 (or contact portion 35) has a plurality of protrusions 300 (or protrusions 302) at the end that contacts the release tape 4. With this configuration, the round protrusions 300 bite into the release tape 4 and the protective tape 7, increasing the contact area between the high-temperature portion 30G and the release tape 4 (i.e., the area where the protective tape 7 and the release tape 4 are welded together), thereby increasing the adhesive area between the protective tape 7 and the release tape 4. Therefore, the adhesion force (adhesion force) between the protective tape 7 and the release tape 4 is increased, and the protective tape 7 can be efficiently peeled off from the wafer body 8.
[0079] Furthermore, according to the embodiment described above, the projection 302 has a spherical portion 304 with a wider central portion at its end. With this configuration, the release tape 4 catches on the recess 302A (the recess formed by the spherical portion 304 biting into the surface), making it difficult for the release tape 4 to peel off the protective tape 7. As a result, the adhesive area between the protective tape 7 and the release tape 4 increases, improving the adhesion (adhesion) between them.
[0080] According to the embodiment described above, in the semiconductor manufacturing method, a semiconductor wafer 6 with a protective tape 7 attached to its upper surface is prepared. The contact portion 30 (or contact portion 31, contact portion 32, contact portion 33, contact portion 34, contact portion 35) of the press heater 3 and the release tape 4 are positioned opposite the protective tape 7. The contact portion 30 of the press heater 3 is brought into contact with the protective tape 7 via the release tape 4 at the outer periphery of the semiconductor wafer 6 in a plan view, thereby heating the release tape 4 and the protective tape 7. The heated protective tape 7 is then peeled off from the upper surface of the semiconductor wafer 6.
[0081] With this configuration, the protective tape 7 can be efficiently peeled off from the wafer body 8.
[0082] Unless otherwise specified, the order in which each process is performed can be changed.
[0083] Furthermore, the same effect can be achieved even if other configurations exemplified in this specification are appropriately added to the above configuration, that is, if other configurations in this specification that are not mentioned as above configurations are appropriately added.
[0084] Furthermore, according to the embodiment described above, the contact portion 30 (or contact portion 31, contact portion 32, contact portion 33, contact portion 34, contact portion 35) of the press heater 3 and the release tape 4 are positioned on the outer periphery of the semiconductor wafer 6 opposite to the outer periphery where the notch or orientation flat is formed, so as to face the protective tape 7. Then, the heated protective tape 7 is peeled off from the upper surface of the semiconductor wafer 6 in the direction toward the outer periphery where the notch or orientation flat is formed. With this configuration, it is possible to avoid the contact portion of the press heater 3, which serves as the starting point for peeling, overlapping with the notch or the like. Therefore, it is possible to secure the contact area between the release tape 4 and the protective tape 7 at the contact portion of the press heater 3.
[0085] <Modifications of the multiple embodiments described above> In the various embodiments described above, the material, dimensions, shape, relative arrangement, or implementation conditions of each component may also be described, but these are all examples and not limiting.
[0086] Accordingly, countless variations and equivalents not shown are envisioned within the scope of the art disclosed herein. These include, for example, modifications, additions, or omissions of at least one component, as well as the extraction of at least one component from at least one embodiment and its combination with a component from another embodiment.
[0087] Furthermore, in at least one embodiment described above, if a material name or the like is mentioned without further specification, it is assumed that the material includes other additives, such as an alloy, unless otherwise specified, to avoid any inconsistencies.
[0088] Furthermore, unless contradictory, when it is stated that "one" component is provided in the embodiments described above, "one or more" such components may be provided.
[0089] Furthermore, each component in the embodiments described above is a conceptual unit, and the scope of the technology disclosed in this specification includes cases where one component consists of multiple structures, where one component corresponds to a part of a structure, and where multiple components are provided in a single structure.
[0090] Furthermore, each component in the embodiments described above shall include structures having other structures or shapes, as long as they perform the same function.
[0091] Furthermore, the descriptions in this specification are referenced for all purposes related to the present technology and are not considered to be prior art.
[0092] The various aspects of this disclosure are summarized below as an appendix.
[0093] (Note 1) A release tape for contacting a semiconductor wafer with protective tape attached to its upper surface via the protective tape, The system includes a press heater having a contact portion that contacts the aforementioned release tape, The contact portion has a first high-temperature portion and a low-temperature portion, which are arranged sequentially from the outer periphery towards the center in a plan view of the semiconductor wafer. The first high-temperature section is set to a higher temperature than the low-temperature section. Semiconductor manufacturing equipment.
[0094] (Note 2) The semiconductor manufacturing equipment is as described in Appendix 1. The contact portion further comprises a second high-temperature portion, In the contact portion, the semiconductor wafer is provided with a first high-temperature portion, a low-temperature portion, and a second high-temperature portion in order from the outer periphery to the center in a plan view, The second high-temperature section is set to a higher temperature than the low-temperature section. Semiconductor manufacturing equipment.
[0095] (Note 3) The semiconductor manufacturing equipment is as described in Appendix 2. The first high-temperature section and the second high-temperature section are set to a temperature of 160°C or higher and 200°C or lower. The low-temperature section is set to a temperature of less than 160°C. Semiconductor manufacturing equipment.
[0096] (Note 4) The semiconductor manufacturing equipment is as described in Appendix 3. The first high-temperature portion, the low-temperature portion, and the second high-temperature portion are formed in an arc shape and a wavy shape when viewed in plan on the semiconductor wafer. Semiconductor manufacturing equipment.
[0097] (Note 5) A release tape for contacting a semiconductor wafer with protective tape attached to its upper surface via the protective tape, The system includes a press heater having a contact portion that contacts the aforementioned release tape, The contact portion is formed in an arc shape and a wavy shape when viewed from above on the semiconductor wafer. Semiconductor manufacturing equipment.
[0098] (Note 6) A release tape for contacting a semiconductor wafer with protective tape attached to its upper surface via the protective tape, The system includes a press heater having a contact portion that contacts the aforementioned release tape, The contact portion has multiple protrusions at the end that contacts the release tape. Semiconductor manufacturing equipment.
[0099] (Note 7) The semiconductor manufacturing equipment is as described in Appendix 6. The projection has a broad spherical portion at its end, Semiconductor manufacturing equipment.
[0100] (Note 8) A semiconductor manufacturing method carried out using semiconductor manufacturing equipment described in any one of the appendices 1 to 7, Prepare the semiconductor wafer on which the protective tape is attached to the upper surface, The contact portion of the press heater and the release tape are positioned opposite the protective tape. At the outer periphery of the semiconductor wafer in plan view, the contact portion of the press heater is brought into contact with the protective tape via the release tape, thereby heating the release tape and the protective tape. The heated protective tape is peeled off from the upper surface of the semiconductor wafer. Semiconductor manufacturing methods.
[0101] (Note 9) The semiconductor manufacturing method is as described in Appendix 8. On the outer periphery of the semiconductor wafer located opposite the outer periphery where a notch or orientation flat is formed, the contact portion of the press heater and the release tape are positioned so as to face the protective tape. The heated protective tape is peeled off from the upper surface of the semiconductor wafer in a direction toward the outer periphery where the notch or orientation flat is formed. Semiconductor manufacturing methods. [Explanation of Symbols]
[0102] 3 Press heater, 4 Release tape, 6 Semiconductor wafer, 7 Protective tape, 30 Contact area, 30A High temperature area, 30B Low temperature area, 30C High temperature area, 30D High temperature area, 30E Low temperature area, 30F High temperature area, 30G High temperature area, 30H High temperature area, 31 Contact area, 32 Contact area, 33 Contact area, 34 Contact area, 35 Contact area, 300 Protrusion, 302 Protrusion, 304 Spherical area.
Claims
1. A release tape for contacting a semiconductor wafer with protective tape attached to its upper surface via the protective tape, The system includes a press heater having a contact portion that contacts the aforementioned release tape, The contact portion has a first high-temperature portion and a low-temperature portion, which are arranged sequentially from the outer periphery towards the center in a plan view of the semiconductor wafer. The first high-temperature section is set to a higher temperature than the low-temperature section. The contact portion further comprises a second high-temperature portion, In the contact portion, the semiconductor wafer is provided with a first high-temperature portion, a low-temperature portion, and a second high-temperature portion in order from the outer periphery to the center in a plan view, The second high-temperature section is set to a higher temperature than the low-temperature section. The first high-temperature section and the second high-temperature section are set to a temperature of 160°C or higher and 200°C or lower. The low-temperature section is set to a temperature of less than 160°C. The first high-temperature portion, the low-temperature portion, and the second high-temperature portion are formed in an arc shape and a wavy shape when viewed in plan on the semiconductor wafer. Semiconductor manufacturing equipment.
2. A release tape for contacting a semiconductor wafer with protective tape attached to its upper surface via the protective tape, The system includes a press heater having a contact portion that contacts the aforementioned release tape, The contact portion is formed in an arc shape and a wavy shape when viewed from above on the semiconductor wafer. Semiconductor manufacturing equipment.
3. A release tape for contacting a semiconductor wafer on which a protective tape is attached to the upper surface, via the protective tape, The system includes a press heater having a contact portion that contacts the aforementioned release tape, The contact portion has multiple protrusions at the end that contacts the release tape, The projection has a spherical projection end, The tip of the projection has a wider central width than the portion of the projection other than the tip of the projection. Semiconductor manufacturing equipment.
4. A semiconductor manufacturing method carried out using a semiconductor manufacturing apparatus described in any one of claims 1 to 3, Prepare the semiconductor wafer on which the protective tape is attached to the upper surface, The contact portion of the press heater and the release tape are positioned opposite the protective tape. At the outer periphery of the semiconductor wafer in plan view, the contact portion of the press heater is brought into contact with the protective tape via the release tape, thereby heating the release tape and the protective tape. The heated protective tape is peeled off from the upper surface of the semiconductor wafer. Semiconductor manufacturing methods.
5. The semiconductor manufacturing method described in claim 4, On the outer periphery of the semiconductor wafer located opposite the outer periphery where a notch or orientation flat is formed, the contact portion of the press heater and the release tape are positioned so as to face the protective tape. The heated protective tape is peeled off from the upper surface of the semiconductor wafer in a direction toward the outer periphery where the notch or orientation flat is formed. Semiconductor manufacturing methods.