Multilayer connection structure and method for manufacturing the same, semiconductor device

Abstract

To provide a multilayer connection structure and a manufacturing method thereof, and a semiconductor device.SOLUTION: A multilayer connection structure includes: a laminated structure; a plurality of interconnection through holes arranged at intervals in a horizontal direction; and interconnection conductors HL1 to HL4 filled in the interconnection through holes. The multilayer connection structure further includes: a plurality of lead film layers 1a to 1e; and at least one insulating film layer 2a to 2f. Each of the lead film layers and the insulating film layers are alternately arranged along a vertical direction Z, include at least actual lead pattern portions, and expose the actual lead pattern portion of the at least one lead film layer. Positions of the lead film layers in which the actual lead pattern portion 11 correspondingly exposed by the at least two interconnection through holes are located are not exactly the same, and each of the interconnection through holes penetrates through at least all the film layers on the lowermost lead film layer in at least the laminated structure.SELECTED DRAWING: Figure 9

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and particularly relates to a multilayer connection structure and its manufacturing method, and a semiconductor device.

Background Art

[0002] Currently, semiconductor technology is developing rapidly, semiconductor components in semiconductor devices are becoming increasingly densified, and the number of lead film layers in the interconnection structure is increasing. Therefore, the connection relationship between lead film layers, the method of leading out lead film layers, etc. are becoming increasingly complicated, consuming a great deal of manufacturing cost and wasting production capacity.

Summary of the Invention

[0003] Embodiments of the present invention provide a multilayer connection structure and its manufacturing method, and a semiconductor device that can not only realize the connection between an interconnection conductor and a corresponding lead film layer, but also reduce the waste of manufacturing cost and production capacity.

[0004] The first aspect of the present application provides a multilayer connection structure, comprising a stacked structure, a plurality of interconnection through-holes arranged at intervals in the horizontal direction, and an interconnection conductor filled in the interconnection through-holes, the stacked structure includes a plurality of lead film layers and at least one insulating film layer, the lead film layers and the insulating film layer are alternately arranged along the vertical direction, and each lead film layer includes at least an actual lead pattern portion, the interconnection through-holes expose the actual lead pattern portions of at least one layer of the lead film layers, and the positions of the lead film layers where the actually lead pattern portions correspondingly exposed by at least two of the interconnection through-holes are located are not exactly the same, and each of the interconnection through-holes penetrates at least all the film layers above the lowermost lead film layer in the stacked structure.

[0005] In an exemplary embodiment of the present disclosure, the upper end surfaces of any of the interconnection through-holes are flush with each other.

[0006] In exemplary embodiments of this disclosure, the upper end surface of the interconnecting conductor is flush with the upper end surface of the laminated structure, and / or Multiple insulating film layers are provided, and the uppermost layer of the laminated structure is the insulating film layer, and / or The aforementioned lead film layer consists of three or more layers.

[0007] In exemplary embodiments of the present disclosure, at least one of the lead film layers on the lowest lead film layer in the laminated structure further includes a dummy pattern portion separated from the actual lead pattern portion, wherein in the same lead film layer, the lower end surface of the dummy pattern portion is flush with the lower end surface of the actual lead pattern portion, and the upper end surface of the dummy pattern portion is flush with the upper end surface of the actual lead pattern portion. The dummy pattern portion overlaps with at least one of the interconnection through holes in the vertical direction and is exposed.

[0008] In exemplary embodiments of the present disclosure, each interconnection through-hole penetrates a pattern portion of each lead film layer above the lowest lead film layer in a vertical direction, and the pattern portion through which the interconnection through-hole penetrates in a vertical direction includes the actual lead pattern portion and / or the dummy pattern portion.

[0009] In exemplary embodiments of this disclosure, the lower end faces of any of the interconnecting through holes are flush with each other. The interconnection through-hole penetrates the pattern portion of the lowest lead film layer, or The lower end of the interconnection through-hole is embedded within the pattern portion of the lowest lead film layer.

[0010] In exemplary embodiments of the present disclosure, the vertical orthographic projection of at least one of the interconnection through-holes is entirely located within one patterned portion of each lead film layer, and / or The vertical orthographic projection of at least one of the interconnection through holes overlaps with at least one patterned portion located in the same layer of the lead film layer, and / or At least one patterned portion is exposed by a plurality of interconnecting through holes.

[0011] A second aspect of this application provides a semiconductor device comprising a substrate and at least one multilayer connection structure described in any one of the preceding paragraphs, formed on the substrate.

[0012] A third aspect of this application provides a method for manufacturing a multilayer connection structure, the manufacturing method being: A laminated structure is formed by alternately arranging lead film layers and insulating film layers vertically on a substrate, wherein multiple lead film layers are provided, and at least one insulating film layer is provided, and each lead film layer includes at least an actual lead pattern portion. After forming the uppermost film layer of the laminated structure, a patterning process is performed on the laminated structure using an etching process to form a plurality of interconnection through-holes spaced horizontally, wherein the interconnection through-holes penetrate all film layers above the lowest lead film layer in the laminated structure, expose the actual lead pattern portion of at least one of the lead film layers, and the positions of the lead film layers where the actual lead pattern portions exposed by at least two of the interconnection through-holes are located are not exactly the same. The process includes the step of filling each interconnection through-hole with a conductive material to form an interconnection conductor in each interconnection through-hole.

[0013] In exemplary embodiments of the present disclosure, at least one lead film layer further includes a dummy pattern portion separated from the actual lead pattern portion, the interconnection through-holes penetrate vertically through the pattern portion of each lead film layer on the lowest lead film layer, and the pattern portion through which the interconnection through-holes penetrate vertically includes the actual lead pattern portion and / or the dummy pattern portion. The step of forming a lead film layer including the actual lead pattern portion and the dummy pattern portion is: The steps include forming a conductive film on the substrate, The process includes the step of simultaneously forming the actual lead pattern portion and the dummy pattern portion by performing a patterning process on the conductive film.

[0014] In exemplary embodiments of the present disclosure, the interconnection through-holes penetrate vertically through each pattern portion of the lead film layer on the lowest lead film layer, and the pattern portions through which the interconnection through-holes penetrate vertically include the actual lead pattern portions and / or the dummy pattern portions. The step of forming a lead film layer including the actual lead pattern portion and the dummy pattern portion is: The steps include forming a conductive film on the substrate, The process involves a step in which, by applying a patterning treatment to the conductive film using a single patterning process, a portion of the actual lead pattern and at least one intermediate pattern are simultaneously formed, wherein the intermediate pattern and the actual lead pattern are separated from each other. The process includes the step of simultaneously forming another portion of the actual lead pattern and the dummy pattern by applying a patterning process to the intermediate pattern portion using a single patterning process.

[0015] The technical solutions provided by embodiments of the present invention have at least the following advantages.

[0016] In this invention, all interconnection through-holes in the multilayer connection structure penetrate all film layers above the bottommost lead film layer in the laminated structure. In other words, the interconnection conductors corresponding to all interconnection through-holes in the multilayer connection structure of this invention are formed after the topmost film layer of the laminated structure is manufactured. This design facilitates the simultaneous manufacturing of different types of interconnection conductors in the multilayer connection structure, and compared to structural solutions where different types of interconnection conductors must be manufactured separately, the design solution for the multilayer connection structure of this invention can reduce the manufacturing cost of the multilayer connection structure and reduce wasted production capacity. [Brief explanation of the drawing]

[0017] The accompanying drawings are incorporated herein and form a part hereof, showing embodiments consistent with the present application, and are useful for explaining the principles of the present application together with the specification. Clearly, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative efforts. [Figure 1a] Schematic diagrams of multilayer connection structures shown in different related technologies are shown. [Figure 1b] Schematic diagrams of multilayer connection structures shown in different related technologies are shown. [Figure 2] Schematic diagrams of the structures of multilayer connection structures according to different embodiments of the present invention are shown. [Figure 3] Schematic diagrams of the structures of multilayer connection structures according to different embodiments of the present invention are shown. [Figure 4] Schematic diagrams of the structures of multilayer connection structures according to different embodiments of the present invention are shown. [Figure 5] Schematic diagrams of the structures of multilayer connection structures according to different embodiments of the present invention are shown. [Figure 6] Schematic diagrams of the structures after the via-hole treatment of the stacked structure according to an embodiment of the present invention are shown. [Figure 7] Schematic diagrams of the structures of the stacked structure including the actual lead pattern part and the dummy pattern part according to an embodiment of the present invention are shown. [Figure 8] Schematic diagrams of the structures after the via-hole treatment of the stacked structure shown in FIG. 7 are shown. [Figure 9] Schematic diagrams of the structures of multilayer connection structures according to another embodiment of the present invention are shown. [Figure 10] Schematic diagrams of the planar relationships between the interconnect conductors and the pattern parts according to different embodiments of the present invention are shown. [Figure 11] Schematic diagrams of the planar relationships between the interconnect conductors and the pattern parts according to different embodiments of the present invention are shown. [Figure 12] Schematic diagrams of the planar relationships between the interconnect conductors and the pattern parts according to different embodiments of the present invention are shown. [Figure 13] Schematic diagrams of the planar relationships between the interconnect conductors and the pattern parts according to different embodiments of the present invention are shown. [Figure 14] A schematic diagram of a multilayer connection structure according to another embodiment of the present invention is shown. [Figure 15] A schematic diagram of a multilayer connection structure according to another embodiment of the present invention is shown. [Figure 16] The schematic diagrams shown represent the different steps involved in manufacturing a multilayer connection structure according to an embodiment of the present invention. [Figure 17] The schematic diagrams shown represent the different steps involved in manufacturing a multilayer connection structure according to an embodiment of the present invention. [Figure 18] The schematic diagrams shown represent the different steps involved in manufacturing a multilayer connection structure according to an embodiment of the present invention. [Figure 19] The schematic diagrams shown represent the different steps involved in manufacturing a multilayer connection structure according to an embodiment of the present invention. [Modes for carrying out the invention]

[0018] Next, exemplary embodiments will be described in more detail with reference to the accompanying drawings. However, exemplary embodiments can be embodied in various forms and should not be construed as being limited to the examples described herein. Rather, these embodiments are provided to make the invention comprehensive and complete and to fully convey the concepts of the exemplary embodiments to those skilled in the art.

[0019] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. The following description provides many specific details to give a complete understanding of the embodiments of this application. However, those skilled in the art will understand that the technical solutions of this application can be implemented without one or more specific details, and that other methods, components, apparatus, steps, etc., can be employed. In other cases, well-known methods, apparatus, implementations, or operations are not described or shown in detail to avoid obscuring the embodiments of this application.

[0020] This application is described in further detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features included in the various embodiments of this application described below can be combined with each other, insofar as they do not contradict each other. The embodiments described below with reference to the drawings are illustrative and intended to illustrate this application, and should not be construed as limiting this application.

[0021] With the continuous development of semiconductor technology, semiconductor components in semiconductor devices are becoming increasingly densely packed. This makes the interconnections between lead film layers and between lead film layers and other circuits increasingly complex, resulting in an ever-increasing number of interconnection conductors required for three-dimensional stacking processes.

[0022] An interconnecting conductor refers to a conductive structure used to connect different conductive components. For example, interconnecting conductors can be used to connect different lead film layers, connect different leads within each lead film layer, and connect lead film layers to external operating circuits.

[0023] Furthermore, interconnect conductors that realize connections between different lead film layers and interconnect conductors that realize connections between lead film layers and external operating circuits can be defined as interconnect conductors for vertical interconnection, while interconnect conductors that realize connections between different leads within each lead film layer can be defined as interconnect conductors for horizontal interconnection.

[0024] In semiconductor devices, there are many types of interconnecting conductors for vertical interconnections. If the lead film layers on which the corresponding leads are located differ for multiple interconnecting conductors for vertical interconnections, it means that these multiple interconnecting conductors for vertical interconnections are of different types. This will be explained with reference to the stacked structure shown in Figure 1a. In Figure 1a, there are four types of interconnecting conductors for vertical interconnections within the stacked structure: the first interconnecting conductor HL1, the second interconnecting conductor HL2, the third interconnecting conductor HL3, and the fourth interconnecting conductor HL4. The first interconnecting conductor HL1 connects the first lead film layer 1a to the corresponding lead 10 in the second lead film layer 1b, the second interconnecting conductor HL2 connects the first lead film layer 1a to the corresponding lead 10 in the third lead film layer 1c, one end of the third interconnecting conductor HL3 is connected to the corresponding lead 10 in the first lead film layer 1a, and the other end of the third interconnecting conductor HL3 extends away from the first lead film layer 1a, penetrating the laminated structure and being able to be brought out to connect to an external operating circuit (not shown), one end of the fourth interconnecting conductor HL4 is connected to the corresponding lead 10 in the fourth lead film layer 1d, and the other end of the fourth interconnecting conductor HL4 extends away from the fourth lead film layer 1d, penetrating the laminated structure and being able to be brought out to connect to an external operating circuit (not shown).

[0025] Figure 1a is used solely to illustrate the presence of multiple types of vertical interconnection interconnect conductors within a laminated structure, and it should be noted that this does not mean that the laminated structure must include the types of vertical interconnection interconnect conductors shown in Figure 1a. In other words, the laminated structure may include all types of vertical interconnection interconnect conductors shown in Figure 1a, some types of vertical interconnection interconnect conductors shown in Figure 1a, or none of all types of vertical interconnection interconnect conductors shown in Figure 1a, and different types of vertical interconnection interconnect conductors may be designed according to specific product requirements. Furthermore, the number of vertical interconnection interconnect conductors, the number of lead film layers, the number of leads within the lead film layers, etc., are not limited to those shown in Figure 1a and can be designed according to actual conditions.

[0026] Referring to Figure 1a, since the interconnect conductors of vertical interconnects are typically designed between the two structures being connected, different types of vertical interconnect interconnect conductors must be manufactured separately. Therefore, as the lead film layer becomes increasingly denser and more types of vertical interconnect interconnect conductors are required, manufacturing costs also increase, and production capacity is wasted.

[0027] Furthermore, if the lead film layer 1 has a relatively large number of layers, and there are leads 10 that need to be connected to either of two adjacent layers by a vertical interconnection interconnection conductor HL, then, as shown in Figure 1b, for example, the vertical interconnection interconnection conductor HL for each layer must be manufactured separately. Therefore, when manufacturing the interconnection conductor HL corresponding to each layer, it is necessary to create a hole for each layer (this hole is for accommodating the interconnection conductor), which increases the number of processes and manufacturing costs in proportion to the number of layers in the lead film layer 1.

[0028] To solve this technical problem, embodiments of the present invention provide a multilayer connection structure applicable to semiconductor devices. Here, the multilayer connection structure may include a stacked structure, which may include a plurality of lead film layers and a plurality of insulating film layers, the lead film layers and insulating film layers being arranged alternately along the vertical direction. That is, the stacked structure may include a structure in which lead film layers, insulating film layers, lead film layers, insulating film layers, etc., are alternately and repeatedly stacked. Here, the multilayer connection structure may further include a plurality of interconnection through-holes arranged at intervals in the horizontal direction and interconnection conductors filling each interconnection through-hole, and the plurality of interconnection conductors of the multilayer connection structure may include, but are not limited to, different types of interconnection conductors. The plurality of interconnection conductors of the multilayer connection structure may include the same type of interconnection conductor, but whether or not they specifically have the same type of interconnection conductor can be designed on a case-by-case basis.

[0029] The multilayer connection structure according to an embodiment of the present invention will be described in detail below with reference to the drawings.

[0030] Referring to Figure 2, the laminated structure may include a first insulating film layer 2a, a first lead film layer 1a, a second insulating film layer 2b, a second lead film layer 1b, a third insulating film layer 2c, a third lead film layer 1c, a fourth insulating film layer 2d, a fourth lead film layer 1d, a fifth insulating film layer 2e, a fifth lead film layer 1e, and a sixth insulating film layer 2f, which are sequentially stacked along the vertical direction Z.

[0031] In the laminated structure of the present invention, the bottommost film layer (i.e., the first film layer formed) may be an insulating film layer, for example, the first insulating film layer 2a shown in Figure 2, or it may insulate the bottommost lead film layer (for example, the first lead film layer 1a shown in Figure 2) from other external circuits and protect the bottommost lead film layer, but it is not limited to this, and the bottommost film layer may be a lead film layer to facilitate connection with other circuit structures, and it can be specifically designed according to actual needs. Furthermore, the topmost film layer (the last film layer formed) may be an insulating film layer, for example, the sixth insulating film layer 2f shown in Figure 2, or it may insulate the topmost lead film layer (for example, the fifth lead film layer 1e shown in Figure 2) from other external circuits and protect the topmost lead film layer, but it is not limited to this, and the topmost film layer may be a lead film layer to facilitate connection with other circuit structures, and it can be specifically designed according to actual needs.

[0032] Furthermore, the insulating film layer is not limited to the multilayer configuration described above. If there are two lead film layers, the insulating film layer may be a single layer located between the two lead film layers. Also, if there are two lead film layers, multiple insulating film layers may be provided. For example, they may be arranged alternately in the order of insulating film layer, lead film layer, insulating film layer, lead film layer, or alternating in the order of lead film layer, insulating film layer, lead film layer, insulating film layer, or alternating in the order of insulating film layer, lead film layer, insulating film layer, lead film layer, insulating film layer, etc., and the design will depend on the specific circumstances.

[0033] In some other embodiments, the lead film layer can be made of three or more layers, for example, five layers as shown in Figure 2, but is not limited to this, and may be three, four, or more than five layers. By making the lead film layer three or more layers, diversity in the interconnection structure design can be realized and the interconnection density can be increased. Applying the interconnection structure of the present invention to the wiring of a three-dimensional memory structure can reduce the manufacturing cost of the wiring of the three-dimensional memory structure.

[0034] In the embodiments of the present invention, each lead film layer may include at least a plurality of patterned portions, and the material of these patterned portions may be a conductive material, that is, the patterned portions themselves may be conductive. For example, the material of the patterned portions may include one or more metallic conductive materials such as aluminum, copper, and tungsten, but is not limited thereto, and may also include other non-metallic conductive materials such as graphite, or semiconductor materials such as polysilicon, and no further explanation is provided here.

[0035] Each lead film layer may have multiple patterned sections, each including at least one actual lead pattern section 11, where the actual lead pattern section 11 refers to the portion actually used within the circuit structure to perform functions such as signal transmission. For example, the actual lead pattern section 11 within a lead film layer may include one or more of the following: word lines, bit lines, capacitor plates, ground lines, bridge lines, gates, source electrodes, and drain electrodes, but is not particularly limited and can be designed according to actual needs.

[0036] Furthermore, the number and arrangement of the actual lead pattern portions 11 in each lead film layer can be designed according to the actual situation, so a detailed explanation is omitted here.

[0037] In some embodiments, each lead film layer may include insulating isolation portions 12 in addition to conductive pattern portions, and the insulating isolation portions 12 may be formed in areas of the lead film layer where conductivity is not required. For example, the insulating isolation portions 12 may be formed in the gaps between adjacent pattern portions so that insulating isolation is achieved between the pattern portions of each lead film layer at specific locations, or the insulating isolation portions 12 may be formed at the edge positions of the entire lead film layer.

[0038] Of these, the upper surface of the insulating separation portion 12 can be made flush with the upper surface of the pattern portion, thereby ensuring the flatness of the lead film layer surface, which facilitates the execution of subsequent film layer processes and ensures the flatness of the subsequent film layer formation.

[0039] For example, the material of the insulating separation portion 12 may be the same as the material of the insulating film layer, but is not limited to this, and may be different. Furthermore, in the embodiments of the present invention, the materials of the insulating film layer and the insulating separation portion 12 may include one or more of the following: silicon nitride, silicon oxide, silicon oxynitride, etc., and may be low-k (low dielectric constant) dielectric materials to reduce crosstalk between adjacent lead film layers and interconnecting conductors, but is not limited to this, and other insulating materials may be used.

[0040] In the multilayer connection structure of the present invention, each interconnecting conductor can be connected to an actual lead pattern portion 11 of at least one lead film layer according to the actual design, and it should be noted that the positions of the lead film layers where the actual lead pattern portions 11 to which at least two interconnecting conductors are connected are not exactly the same. That is, the multilayer connection structure of the present invention has interconnecting conductors of different types of vertical interconnections. For example, in some embodiments, referring to Figure 2, in the multilayer connection structure, the number of lead film layers where the actual lead pattern portions 11 to which the first interconnecting conductor HL1, the second interconnecting conductor HL2, the third interconnecting conductor HL3, and the fourth interconnecting conductor HL4 are connected is the same, but the positions are partially different. That is, the number of lead film layers on which the actual lead pattern portion 11 to which the first interconnecting conductor HL1, the second interconnecting conductor HL2, the third interconnecting conductor HL3, and the fourth interconnecting conductor HL4 are connected is 2, and the actual lead pattern portion to which the first interconnecting conductor HL1 is connected includes the actual lead pattern portion 11 located on the first lead film layer 1a and the actual lead pattern portion 11 located on the second lead film layer 1b, and the actual lead pattern portion to which the second interconnecting conductor HL2 is connected is located on the first lead film layer 1a The actual lead pattern portion 11 located in the first lead layer 1a and the actual lead pattern portion 11 located in the third lead film layer 1c are included, and the actual lead pattern portion to which the third interconnecting conductor HL3 is connected includes the actual lead pattern portion 11 located in the first lead film layer 1a and the actual lead pattern portion 11 located in the fourth lead film layer 1d, and the actual lead pattern portion to which the fourth interconnecting conductor HL4 is connected includes the actual lead pattern portion 11 located in the first lead film layer 1a and the actual lead pattern portion 11 located in the fifth lead film layer 1e. In other words, in the multilayer connection structure shown in Figure 2, the first interconnecting conductor HL1, the second interconnecting conductor HL2, the third interconnecting conductor HL3, and the fourth interconnecting conductor HL4 are different types of interconnecting conductors.

[0041] In other embodiments, as shown in Figure 3, the multilayer connection structure may include interconnections where the number of lead film layers on which the corresponding actual lead pattern portions 11 are located is the same, but the positions are completely different, such as the first interconnection conductor HL1 and the second interconnection conductor HL2; or the number of lead film layers on which the corresponding actual lead pattern portions 11 are located is different, and the positions are also completely different, such as the third interconnection conductor HL3 and the fourth interconnection conductor HL4; or the number of lead film layers on which the corresponding actual lead pattern portions 11 are located is different, and the positions are also partially different, such as the first interconnection conductor HL1 and the third interconnection conductor HL3, the first interconnection conductor HL1 and the fourth interconnection conductor HL4, or the second interconnection conductor HL2 and the fourth interconnection conductor HL4.

[0042] It should be noted that the multilayer connection structure in this invention is not limited to the designs shown in Figures 2 and 3, and other designs are possible depending on actual needs; therefore, excessive examples are not shown here.

[0043] In a particular implementation of the present invention, in a multilayer connection structure, each interconnecting conductor penetrates all film layers above at least the lowest lead film layer of the stacked structure; that is, each interconnecting conductor extends from the top end of the stacked structure (the end furthest from the substrate required in the manufacturing process) to the bottom end of the stacked structure (the end closest to the substrate required in the manufacturing process), penetrating all film layers above at least the lowest lead film layer of the stacked structure. All film layers referred to herein include insulating film layers and lead film layers, and if each interconnecting conductor penetrates all film layers above at least the lowest lead film layer of the stacked structure, it should be understood that each interconnecting conductor can be connected to the corresponding actual lead pattern portion 11 in the corresponding lead film layer. That is, if, in orthographic projection, the interconnecting conductor and the corresponding actual lead pattern portion in the corresponding lead film layer are not separated, the interconnecting conductor is considered to be connected to the corresponding actual lead pattern portion in the corresponding lead film layer.

[0044] For example, referring to Figures 2 and 3, the first interconnecting conductor HL1, the second interconnecting conductor HL2, the third interconnecting conductor HL3, and the fourth interconnecting conductor HL4 can penetrate all the film layers above the bottom lead film layer (i.e., the first lead film layer 1a). In other words, the first interconnecting conductor HL1, the second interconnecting conductor HL2, the third interconnecting conductor HL3, and the fourth interconnecting conductor HL4 can penetrate the sixth insulating film layer 2f, the fifth lead film layer 1e, the fifth insulating film layer 2e, the fourth lead film layer 1d, the fourth insulating film layer 2d, the third lead film layer 1c, the third insulating film layer 2c, the second lead film layer 1b, and the second insulating film layer 2b.

[0045] Here, each interconnecting conductor in the multilayer connection structure needs to penetrate all the film layers above the bottommost lead film layer of the laminated structure in order to connect to the actual lead pattern portion 11 in the corresponding lead film layer. Therefore, all interconnecting conductors in the multilayer connection structure of the present invention are formed after the topmost film layer of the laminated structure is completed. Such a design facilitates the simultaneous manufacturing of different types of interconnecting conductors in the multilayer connection structure. Compared to the structural solution shown in Figure 1a, where different types of interconnecting conductors need to be manufactured individually, and the structural solution in Figure 1b, where the multilayer interconnecting conductors are manufactured layer by layer, the design solution for the multilayer connection structure of the present invention can reduce the manufacturing cost of the multilayer connection structure and reduce wasted production capacity.

[0046] It should be noted that each interconnecting conductor is not limited to penetrating all film layers above the bottommost lead film layer in the laminated structure, but can also penetrate the bottommost lead film layer. For example, as shown in Figure 4, the first interconnecting conductor HL1, the second interconnecting conductor HL2, the third interconnecting conductor HL3, and the fourth interconnecting conductor HL4 penetrate the sixth insulating film layer 2f, the fifth lead film layer 1e, the fifth insulating film layer 2e, the fourth lead film layer 1d, the fourth insulating film layer 2d, the third lead film layer 1c, the third insulating film layer 2c, the second lead film layer 1b, and the second insulating film layer 2b, as well as the first lead film layer 1a (i.e., the bottommost lead film layer). However, it is not limited to this, and each interconnecting conductor can not only penetrate all film layers above the first lead film layer 1a in the laminated structure, but can also extend into the first lead film layer 1a, as shown in Figures 2 and 3. Alternatively, each interconnecting conductor may penetrate only all the film layers above the first lead film layer 1a in the laminated structure, but not penetrate the first lead film layer 1a itself, extending only to the upper surface of the first lead film layer 1a, that is, just contacting the upper surface of the first lead film layer 1a, as shown in Figure 5.

[0047] In some embodiments, the orthogonal projection of the interconnecting conductor of the present invention in the vertical Z direction can be located within the actual lead pattern portion 11 to which the interconnecting conductor corresponds to connect. As described above, since the interconnecting conductor penetrates all film layers above at least the lowest lead film layer, if the actual lead pattern portion 11 to which the interconnecting conductor corresponds to connect includes an actual lead pattern portion 11 located above the lowest lead film layer, the interconnecting conductor penetrates at least the actual lead pattern portion 11 that is connected to it and located above the lowest lead film layer. That is, the present invention, by the penetration method, can actually bring the interconnecting conductor into contact with the actual lead pattern portion 11 that corresponds to it and is located above the lowest lead film layer, thereby realizing a connection between the interconnecting conductor and the actual lead pattern portion 11 that corresponds to it and is located above the lowest lead film layer. This reduces the difficulty of connecting the interconnecting conductor and the actual lead pattern portion 11, increases the contact area between the interconnecting conductor and the actual lead pattern portion 11, and ensures the reliability of the connection between the interconnecting conductor and the actual lead pattern portion 11.

[0048] For example, referring to Figure 3, the first interconnecting conductor HL1 penetrates the actual lead pattern portions 11 of the fourth lead film layer 1d and the second lead film layer 1b in corresponding directions, thereby realizing a connection between the actual lead pattern portion 11 of the fourth lead film layer 1d and the actual lead pattern portion 11 of the second lead film layer 1b. The second interconnecting conductor HL2 penetrates the actual lead pattern portion 11 of the third lead film layer 1c in corresponding directions and extends to the actual lead pattern portion 11 of the first lead film layer 1a, thereby realizing a connection between the actual lead pattern portion 11 of the third lead film layer 1c and the actual lead pattern portion 11 of the first lead film layer 1a. The third interconnecting conductor HL3 penetrates the actual lead pattern portion 11 of the fourth lead film layer 1d, and the upper surface of the third interconnecting conductor HL3 can be connected to other external operating circuits, thereby realizing a connection between the actual lead pattern portion 11 of the fourth lead film layer 1d and other external operating circuits. The fourth interconnecting conductor HL4 penetrates the actual lead pattern portions 11 of the fifth lead film layer 1e, the third lead film layer 1c, and the second lead film layer 1b, and extends to the actual lead pattern portion 11 of the first lead film layer 1a, thereby realizing a connection between the fifth lead film layer 1e, the third lead film layer 1c, the second lead film layer 1b and the actual lead pattern portion 11 of the first lead film layer 1a.

[0049] When the actual lead pattern portion that the interconnecting conductor connects to includes the actual lead pattern portion 11 located in the lowest lead film layer, as shown in Figure 4, the interconnecting conductor can penetrate the actual lead pattern portion 11 of the lowest lead film layer, or, as shown in Figures 2 and 3, it may not completely penetrate the actual lead pattern portion 11 of the lowest lead film layer, but may only extend to the interior of the actual lead pattern portion 11 of the lowest lead film layer. In either connection method, the contact area between the interconnecting conductor and the actual lead pattern portion 11 of the lowest lead film layer can be increased, and contact stability between the two can be ensured, but it is not limited to this. As shown in Figure 5, the interconnecting conductor can also extend only to the upper surface of the actual lead pattern portion 11 of the lowest lead film layer, that is, it may just contact the upper surface of the actual lead pattern portion 11 of the lowest lead film layer, thereby achieving connection between the interconnecting conductor and the actual lead pattern portion 11 of the lowest lead film layer.

[0050] In the present invention, interconnecting conductors are formed as follows. First, interconnecting through-holes are formed in corresponding regions of the laminated structure. For example, as shown in Figure 6, a first interconnecting through-hole ZJ1, a second interconnecting through-hole ZJ2, a third interconnecting through-hole ZJ3, and a fourth interconnecting through-hole ZJ4 can be formed in corresponding regions of the laminated structure. Next, conductive material is filled into the interconnecting through-holes to form interconnecting conductors in each interconnecting through-hole. For example, as shown in Figure 2, a first interconnecting conductor HL1 can be formed in the first interconnecting through-hole ZJ1, a second interconnecting conductor HL2 in the second interconnecting through-hole ZJ2, a third interconnecting conductor HL3 in the third interconnecting through-hole ZJ3, and a fourth interconnecting conductor HL4 in the fourth interconnecting through-hole ZJ4.

[0051] Since the interconnecting conductor of the present invention needs to penetrate all film layers above at least the lowest lead film layer of the laminated structure, the present invention requires that when designing the interconnecting through-holes of the multilayer connection structure, a plurality of interconnecting through-holes arranged horizontally at intervals be provided, each interconnecting through-hole penetrating all film layers above at least the lowest lead film layer of the laminated structure and exposing the actual lead pattern portion 11 of at least one lead film layer.

[0052] Specifically, as shown in Figure 6, the first interconnection through-hole ZJ1 exposes the actual lead pattern portions 11 of the first lead film layer 1a and the second lead film layer 1b, the second interconnection through-hole ZJ2 exposes the actual lead pattern portions 11 of the first lead film layer 1a and the third lead film layer 1c, the third interconnection through-hole ZJ3 exposes the actual lead pattern portions 11 of the first lead film layer 1a and the fourth lead film layer 1d, and the fourth interconnection through-hole ZJ4 exposes the actual lead pattern portions 11 of the first lead film layer 1a and the fifth lead film layer 1e. Therefore, when a conductor material is filled into the interconnection through-holes in a later process to form an interconnection conductor, the conductor material formed in the interconnection through-holes can be brought into contact with the correspondingly exposed actual lead pattern portions 11. That is, for example, as shown in Figures 2 and 6, a connection is achieved between the interconnection conductor and the corresponding actual lead pattern portion 11.

[0053] Furthermore, since interconnecting conductors are formed by filling interconnecting through-holes with conductive material, the design of the interconnecting conductor's extension length, shape, area, etc., is all related to the design of the interconnecting through-holes. In other words, the design of the interconnecting through-holes is consistent with the design of the interconnecting conductors. For example, if you want the interconnecting conductor to penetrate not only all the film layers above the bottommost lead film layer of the laminated structure, but also the bottommost lead film layer, you need to design the interconnecting through-holes so that they penetrate not only all the film layers above the bottommost lead film layer of the laminated structure, but also the bottommost lead film layer. Similarly, if you want the interconnecting conductor to extend not only through all the film layers above the bottommost lead film layer of the laminated structure, but also into the bottommost lead film layer, you need to design the interconnecting through-holes so that they penetrate not only all the film layers above the bottommost lead film layer of the laminated structure, but also into the bottommost lead film layer, but we will not give examples of each here.

[0054] In some embodiments, interconnection through-holes corresponding to different types of interconnection conductors can be formed simultaneously using one-time molding. For example, after forming the top layer of a laminated structure, the laminated structure can be patterned using a single etching process to form multiple horizontally spaced interconnection through-holes required for the laminated structure. Since there are different types of interconnection conductors, the interconnection through-holes corresponding to different types of interconnection conductors will also be different. Specifically, the positions of the lead film layers where the actual lead pattern portions 11 correspondingly exposed along the vertical Z direction are located by the interconnection through-holes of different types of interconnection conductors are not exactly the same. For example, the positions of the lead film layers where the actual lead pattern portions 11 correspondingly exposed along the vertical Z direction are located by the first interconnection through-hole ZJ1, the second interconnection through-hole ZJ2, the third interconnection through-hole ZJ3, and the fourth interconnection through-hole ZJ4 shown in Figure 6 are partially different. As a result, the number of processes is reduced, and manufacturing costs are lowered.

[0055] The term "one-time molding process" refers to a process technology that allows the entire molding process to be completed in a single operation during the manufacturing of interconnection through-holes. This invention enables the simultaneous production of interconnection through-holes corresponding to the same type of interconnection conductor, as well as interconnection through-holes corresponding to different types of interconnection conductors, thereby reducing processing time and costs, improving production efficiency, and ensuring processing accuracy and quality.

[0056] When manufacturing multiple interconnection through-holes required for a multilayer connection structure simultaneously in a single etching process, the etching process conditions (including the gas used for etching, process parameters, etc.) can be adaptively adjusted according to the etching depth and the material of the etched film layer. However, since the etching process is still performed continuously or semi-continuously, even if the etching process conditions are adaptively adjusted at various stages of the etching process, it remains within the scope of a single etching process.

[0057] For example, in embodiments of the present invention, interconnection through-holes described in embodiments of this disclosure can be formed by performing a hole-opening process on a laminated structure using an etching process. Here, the etching process may be anisotropic etching or dry etching, but is not limited to these, and other etching manufacturing methods can also be used while ensuring the etching accuracy of the interconnection through-holes, provided that the pattern density is the same.

[0058] Here, since the positions of the lead film layers where the actual lead pattern portions 11 that connect to different types of interconnecting conductors are located are not exactly the same, when manufacturing interconnecting through-holes for different types of interconnecting conductors by a one-time molding process, the laminated film layers through which the interconnecting through-holes corresponding to different types of interconnecting conductors penetrate along the vertical direction Z are different.

[0059] For example, in some embodiments, the number of patterned areas in the laminated film layer through which interconnection through-holes corresponding to different types of interconnection conductors penetrate along the vertical direction Z is not exactly the same. As shown in Figure 3, the patterned areas through which the first interconnection through-hole ZJ1 and the second interconnection through-hole ZJ2 penetrate are two actual lead patterned areas 11, the patterned area through which the third interconnection through-hole ZJ3 penetrates is one actual lead patterned area 11, and the patterned area through which the fourth interconnection through-hole ZJ4 penetrates is four actual lead patterned areas 11. Since the total number of film layers through which each interconnection through-hole penetrates along the vertical direction Z is the same, if the number of patterned areas through which each interconnection through-hole penetrates along the vertical direction Z is not exactly the same, then the number of insulating isolation areas 12 that penetrate will also not be exactly the same.

[0060] In other embodiments, the number of patterned sections within the laminated film layer through which interconnection through-holes corresponding to different types of interconnection conductors penetrate along the vertical Z direction is the same, but the positions of the lead film layers are not exactly the same. For example, as shown in Figure 6, the number of insulating separation sections 12 and actual lead pattern sections 11 through which the first interconnection through-holes ZJ1, second interconnection through-holes ZJ2, third interconnection through-holes ZJ3, and fourth interconnection through-holes ZJ4 penetrate along the vertical Z direction is the same, but the positions of the lead film layers where the actual lead pattern sections 11 are located are different. That is, the laminated film layer through which the first interconnection through-hole ZJ1 passes includes, in order from top to bottom, a sixth insulating film layer 2f, an insulating separation portion 12 of the fifth lead film layer 1e, the fifth insulating film layer 2e, an insulating separation portion 12 of the fourth lead film layer 1d, the fourth insulating film layer 2d, an insulating separation portion 12 of the third lead film layer 1c, the third insulating film layer 2c, the actual lead pattern portion 11 of the second lead film layer 1b, and the second insulating film layer 2b. The laminated film layer through which the second interconnection through-hole ZJ2 passes includes, from top to bottom, the sixth insulating film layer 2f, the insulating separation portion 12 of the fifth lead film layer 1e, the fifth insulating film layer 2e, the insulating separation portion 12 of the fourth lead film layer 1d, the fourth insulating film layer 2d, the actual lead pattern portion 11 of the third lead film layer 1c, the third insulating film layer 2c, the insulating separation portion 12 of the second lead film layer 1b, and the second insulating film layer 2b. The laminated film layer through which the third interconnection through-hole ZJ3 passes includes, from top to bottom, the sixth insulating film layer 2f, the insulating separation portion 12 of the fifth lead film layer 1e, the fifth insulating film layer 2e, the actual lead pattern portion 11 of the fourth lead film layer 1d, the fourth insulating film layer 2d, the insulating separation portion 12 of the third lead film layer 1c, the third insulating film layer 2c, the insulating separation portion 12 of the second lead film layer 1b, and the second insulating film layer 2b. The laminated film layer through which the fourth interconnection through-hole ZJ4 passes includes, in order from top to bottom, a sixth insulating film layer 2f, an actual lead pattern portion 11 of the fifth lead film layer 1e, a fifth insulating film layer 2e, an insulating separation portion 12 of the fourth lead film layer 1d, a fourth insulating film layer 2d, an insulating separation portion 12 of the third lead film layer 1c, a third insulating film layer 2c, an insulating separation portion 12 of the second lead film layer 1b, and a second insulating film layer 2b.

[0061] Here, regarding the etching depth of the holes, it can be understood that the etching rate is not constant, and under the same process conditions, etching slows down as the hole gets deeper. Also, there are differences in the laminated film layers through which interconnection through-holes corresponding to different types of interconnection conductors penetrate along the vertical Z direction; that is, the number and / or position of the patterned areas are not exactly the same, and the materials of the patterned areas and the insulating isolation areas 12 are different, so the etching rates of the patterned areas and the insulating isolation areas 12 are different. Therefore, when manufacturing interconnection through-holes for different types of interconnection conductors using an etching process, since the film layers through which interconnection through-holes corresponding to different types of interconnection conductors penetrate are not exactly the same, it is easy for some of the manufactured interconnection through-holes to have different etching depths at the same time. As a result, interconnection through-holes corresponding to different types of interconnection conductors are prone to under-etching or over-etching problems, which can easily lead to serious etching load effects, making etching control difficult and affecting yield.

[0062] In some embodiments, when different types of interconnection through-holes required for a multilayer connection structure are manufactured simultaneously in a single etching process, the etching process conditions (including the gas used for etching, process parameters, etc.) can be adaptively adjusted according to the etching depth and the material of the etched film layer. However, since the etching process is still performed continuously or semi-continuously, even if the etching process conditions are adaptively adjusted at various stages of the etching process, it remains within the scope of a single etching process. In this etching process, when etching the same lead film layer, if the materials of the film layers through which two interconnection through-holes penetrate are different, for example, if one of the two interconnection through-holes penetrates a pattern portion and the other penetrates an insulating isolation portion 12, the etching rates of the pattern portion and the insulating isolation portion 12 will differ due to the different materials of the pattern portion and the insulating isolation portion 12. As a result, when one interconnection through-hole in this lead film layer has completed etching, the other interconnection through-hole will have an over-etched or under-etched defect. This defect accumulates as the number of film layers in the multilayer structure increases and the etching depth of the interconnection through-holes increases, affecting the yield.

[0063] To solve the above problems, embodiments of the present invention can utilize dummy pattern portions 13 when manufacturing a multilayer connection structure containing different types of interconnect conductors, such that the laminated film layers through which interconnect through-holes corresponding to each interconnect conductor penetrate along the vertical direction Z are exactly the same. That is, since the number and arrangement of pattern portions within the laminated film layers are exactly the same, uniformity of each interconnect through-hole in the etching process is ensured. In other words, the problem of under-etching or over-etching in some interconnect through-holes is reduced, the etching load effect is improved, the difficulty of etching control is reduced, and the processing yield is improved.

[0064] Specifically, in the laminated structure, the pattern portion of at least one lead film layer located above the bottommost lead film layer may include a dummy pattern portion 13 in addition to the actual lead pattern portion 11. The dummy pattern portion 13 is exposed overlapping with at least one interconnection through-hole in the vertical Z direction, such that the dummy pattern portion 13 is connected to the interconnection conductor in the vertical Z direction within at least one interconnection through-hole. In other words, the interconnection conductor can achieve connection with the dummy pattern portion 13 by passing through the dummy pattern portion 13 located above the bottommost lead film layer. In this embodiment, the dummy pattern portion 13 refers to a pattern portion that is not related to the circuit function of the multilayer connection structure and mainly plays a role in ensuring the uniformity and consistency of etching of each interconnection through-hole in the overall design of the multilayer connection structure.

[0065] Here, in order to avoid leakage and short-circuit problems, the dummy pattern portion 13 needs to be separated from the actual lead pattern portion 11, which is located on the same lead film layer. Specifically, the dummy pattern portion 13 and the actual lead pattern portion 11 can be separated by an insulating separation portion 12 so that the dummy pattern portion 13 and the actual lead pattern portion 11 are insulated from each other.

[0066] In some embodiments, as shown in Figure 14, the first interconnecting conductor HL1 and the second interconnecting conductor HL2 are connected via the actual lead pattern portion 11 of the first lead film layer 1a, and the actual lead pattern portion 11 of the second lead film layer 1b connected to the first interconnecting conductor HL1 and the dummy pattern portion 13 of the second lead film layer 1b connected to the second interconnecting conductor HL2 are separated, but are not limited to this, and the first interconnecting conductor HL1 and the second interconnecting conductor HL2 are connected via the actual lead pattern portion 1 of the first lead film layer 1a When connected via 1, if the dummy pattern portion 13 of the second lead film layer 1b connected to the second interconnection conductor HL2 is not connected to other dummy pattern portions 13, the actual lead pattern portion 11 of the second lead film layer 1b connected to the first interconnection conductor HL1 and the dummy pattern portion 13 of the second lead film layer 1b connected to the second interconnection conductor HL2 can be connected, thereby forming the dummy pattern portion 13 of the second lead film layer 1b connected to the second interconnection conductor HL2 as an actual pattern portion. By designing the actual pattern portion in this way, the effect of impedance reduction due to parallel connection can be obtained, and at the same time, there is no need to cut the dummy pattern portion 13 of the second lead film layer 1b connected to the second interconnection conductor HL2 and the actual lead pattern portion 11 of the second lead film layer 1b connected to the first interconnection conductor HL1 via the patterning process, thereby reducing the difficulty and cost of the process.

[0067] In this embodiment of the present invention, the dummy pattern portion 13 and the actual lead pattern portion 11 of the lead film layer on which it is located can be manufactured simultaneously. For example, after forming a conductive material film that uniformly covers the entire surface, the dummy pattern portion 13 and the actual lead pattern portion 11 can be formed simultaneously by patterning the conductive material film. This ensures that the dummy pattern portion 13 and the actual lead pattern portion 11 are made of the same material, and that the film thickness of the dummy pattern portion 13 is the same as that of the actual lead pattern portion 11. Specifically, in this embodiment, the lower end surface of the dummy pattern portion 13 and the lower end surface of the actual lead pattern portion 11 can be made flush within the same lead film layer, and the upper end surface of the dummy pattern portion 13 (the end surface furthest from the substrate required in the manufacturing process) and the upper end surface of the actual lead pattern portion 11 can be made flush, thereby ensuring the flatness of the entire lead film layer and the flatness of the film layer formed thereafter.

[0068] In this embodiment, each interconnection through-hole penetrates the pattern portion of each lead film layer on the lowest lead film layer along the vertical direction Z, and the pattern portion through which the interconnection through-hole penetrates along the vertical direction includes the actual lead pattern portion 11 and / or the dummy pattern portion 13. Thus, each interconnection conductor penetrates the pattern portion of each lead film layer on the lowest lead film layer along the vertical direction Z, and the pattern portion through which the interconnection conductor penetrates along the vertical direction Z includes the actual lead pattern portion 11 and / or the dummy pattern portion 13.

[0069] For example, the laminated structure can be designed according to the actual situation, and the design of the lead film layer in the laminated structure can be seen in Figure 7. The first lead film layer 1a has actual lead pattern portions 11 in the first region A1, the second region A2, the third region A3 and the fourth region A4, respectively; the second lead film layer 1b has an actual lead pattern portion 11 in the first region A1 and dummy pattern portions 13 in the second region A2, the third region A3 and the fourth region A4, respectively; the third lead film layer 1c has an actual lead pattern portion 11 in the second region A2 and the first region A1 and the third region Dummy pattern portions 13 are provided in region A3 and the fourth region A4, respectively; the fourth lead film layer 1d has an actual lead pattern portion 11 in the third region A3, and dummy pattern portions 13 are provided in the first region A1, the second region A2, and the fourth region A4, respectively; the fifth lead film layer 1e has an actual lead pattern portion 11 in the fourth region A4, and dummy pattern portions 13 are provided in the first region A1, the second region A2, and the third region A3, respectively.

[0070] After forming the laminated structure shown in Figure 7, a hole-opening process can be performed on the laminated structure shown in Figure 7 to form a first interconnection through-hole ZJ1 located in the first region A1, a second interconnection through-hole ZJ2 located in the second region A2, a third interconnection through-hole ZJ3 located in the third region A3, and a fourth interconnection through-hole ZJ4 located in the fourth region A4. Referring to Figure 8, the first interconnection through-hole ZJ1, the second interconnection through-hole ZJ2, the third interconnection through-hole ZJ3, and the fourth interconnection through-hole ZJ4 can penetrate the pattern portion of each lead film layer above the lowest lead film layer along the vertical direction Z. That is, the first interconnection through-hole ZJ1, the second interconnection through-hole ZJ2, the third interconnection through-hole ZJ3, and the fourth interconnection through-hole ZJ4 sequentially penetrate the pattern portions of the fifth lead film layer 1e, the fourth lead film layer 1d, the third lead film layer 1c, and the second lead film layer 1b along the vertical direction Z, and the pattern portions through which the first interconnection through-hole ZJ1, the second interconnection through-hole ZJ2, the third interconnection through-hole ZJ3, and the fourth interconnection through-hole ZJ4 penetrate along the vertical direction Z include an actual lead pattern portion 11 and a dummy pattern portion 13.

[0071] Furthermore, the pattern portion through which the first interconnection through-hole ZJ1, the second interconnection through-hole ZJ2, the third interconnection through-hole ZJ3, and the fourth interconnection through-hole ZJ4 penetrate along the vertical direction Z is not limited to including the actual lead pattern portion 11 and the dummy pattern portion 13 as described above, but may include only the actual lead pattern portion 11 or only the dummy pattern portion 13. The specific design can be carried out based on the actual situation, and it is sufficient to ensure that the arrangement position of the pattern portion in the laminated film layer through which each interconnection through-hole penetrates along the vertical direction Z is exactly the same.

[0072] After manufacturing the first interconnection through-hole ZJ1, the second interconnection through-hole ZJ2, the third interconnection through-hole ZJ3, and the fourth interconnection through-hole ZJ4 as shown in Figure 8, conductive material is filled into the first interconnection through-hole ZJ1, the second interconnection through-hole ZJ2, the third interconnection through-hole ZJ3, and the fourth interconnection through-hole ZJ4 to form the first interconnection conductor HL1, the second interconnection conductor HL2, the third interconnection conductor HL3, and the fourth interconnection conductor HL4 as shown in Figure 9, respectively. The first interconnection conductor HL1, the second interconnection conductor HL2, the third interconnection conductor HL3, and the fourth interconnection conductor HL4 penetrate the pattern portions of the fifth lead film layer 1e, the fourth lead film layer 1d, the third lead film layer 1c, and the second lead film layer 1b along the vertical direction Z. Preferably, the interconnection impedance can be reduced and the reliability of the interconnection can be improved by completely filling the first interconnection through-hole ZJ1, the second interconnection through-hole ZJ2, the third interconnection through-hole ZJ3, and the fourth interconnection through-hole ZJ4 with conductive material.

[0073] In embodiments of the present invention, all interconnection through-holes in the multilayer connection structure penetrate all film layers above the bottom lead film layer in the laminated structure. That is, all interconnection through-holes in the multilayer connection structure of the present invention are formed after the top film layer of the laminated structure is manufactured. Such a design facilitates the simultaneous manufacturing of different types of interconnection conductors in the multilayer connection structure. Compared to structural solutions where different types of interconnection conductors must be manufactured separately, the design solution for the multilayer connection structure of the present invention can reduce the number of processes and masks, thereby reducing the manufacturing cost of the multilayer connection structure and reducing wasted production capacity.

[0074] Since all interconnection through-holes are formed after the manufacturing of the top layer of the laminated structure, in this embodiment, the upper end faces of all interconnection through-holes are flush with each other. As shown in Figure 8, the upper end faces of the first interconnection through-hole ZJ1, the second interconnection through-hole ZJ2, the third interconnection through-hole ZJ3, and the fourth interconnection through-hole ZJ4 are flush with each other.

[0075] Furthermore, in the embodiments of the present invention, the design of the dummy pattern portion 13 makes it possible to make the laminated film layer through which each interconnection through-hole penetrates along the vertical direction Z completely identical, thereby ensuring that the stopping position of each interconnection through-hole is the same. For example, as shown in Figure 8, the stopping position of each interconnection through-hole is located in the pattern portion of the first lead film layer 1a, thereby reducing the problem of under-etching or over-etching in some interconnection through-holes and ensuring that the stopping position of each interconnection conductor is the same. For example, as shown in Figure 9, the stopping position of each interconnection conductor is located in the pattern portion of the first lead film layer 1a, further ensuring contact between the interconnection conductor and the corresponding actual lead pattern portion 11.

[0076] In some embodiments, each interconnection through-hole is not limited to penetrating the pattern portion of each lead film layer on the bottommost lead film layer along the vertical direction Z, but can also penetrate the pattern portion of the bottommost lead film layer. In this way, when the pattern portion of the bottommost lead film layer that is penetrated is an actual lead pattern portion 11, the contact area between the interconnection conductor and the actual lead pattern portion 11 in the bottommost lead film layer can be increased, and contact stability and conductivity between the interconnection conductor and the actual lead pattern portion 11 in the bottommost lead film layer can be ensured. In other words, the interconnection conductor of the present invention is not limited to penetrating the pattern portion of each lead film layer on the bottommost lead film layer along the vertical direction Z, but can also penetrate the pattern portion of the bottommost lead film layer. Note that the pattern portion of the bottommost lead film layer through which the interconnection conductor penetrates may be an actual lead pattern portion 11, but is not limited to this, and may be a dummy pattern portion, or can be determined according to the actual design requirements. When the etching rate of the patterned portion is slower than the etching rate of the insulating film layer 2 and the insulating separation portion 12, compared to providing the patterned portion of the bottommost lead film layer through which the interconnecting conductors pass as a dummy patterned portion and providing the patterned portion of the bottommost lead film layer through which the interconnecting conductors pass as the insulating separation portion 12, it is possible to avoid excessive etching depth of the interconnecting through-holes corresponding to the interconnecting conductors damaging the film layers below the laminated structure.

[0077] In some other embodiments, the stopping position of each interconnection through-hole may be located within the pattern portion of the bottommost lead film layer. That is, the lower end of each interconnection conductor (the end closest to the substrate required in the manufacturing process) may be embedded within the pattern portion of the bottommost lead film layer. This increases the contact area between the interconnection conductor and the actual lead pattern portion 11 in the bottommost lead film layer, thereby ensuring contact stability and conductivity between the interconnection conductor and the actual lead pattern portion 11 in the bottommost lead film layer.

[0078] In other embodiments, each interconnection through-hole may be stopped at the top surface of the pattern of the bottom lead film layer so that the bottom end face of each interconnection conductor (the end face closest to the substrate required in the manufacturing process) is in contact with the top surface of the pattern of the bottom lead film layer.

[0079] Herein, the multilayer connection structure in which the dummy pattern portion 13 is designed in the present invention is not limited to the embodiments shown in Figures 7-9, and the number of lead film layers, the connection relationship of the actual lead pattern portions 11 between each lead film layer, the arrangement design of the pattern portions in each lead film layer, etc. can be changed according to actual needs.

[0080] In other embodiments of the present invention, a plurality of laminated structures may be provided, which are prepared sequentially and stacked along the vertical direction Z, in which at least a portion of the interconnection through holes / patterns are connected to form a larger interconnection structure.

[0081] In some embodiments, as shown in Figures 2-5 and 9, the lower end faces of any interconnection through-holes can be flush with each other, and the upper end faces of any interconnection through-holes can be flush with each other. This ensures that the lower end faces of each interconnection conductor are flush with each other, and the upper end faces of any interconnection conductor are flush with each other. In other words, since the extension length, extension start position, and extension stop position of each interconnection conductor are all the same, each interconnection conductor can be reliably connected to the corresponding actual lead pattern.

[0082] In some embodiments, as shown in Figures 2-5 and 9, the upper end surface of the interconnecting conductor can be made flush with the upper end surface of the laminated structure, ensuring the flatness of the entire multilayer connection structure and facilitating designs such as lamination with other film layer structures.

[0083] In some embodiments, the orthographic projection of at least one interconnection through-hole in the vertical Z direction is located entirely within one pattern section of each lead film layer, and the design requirements are met, such that the orthographic projection of at least one interconnection conductor in the vertical Z direction is located entirely within one pattern section of each lead film layer. In such cases, the outer diameter of the interconnection conductor (i.e., the diameter of the interconnection through-hole corresponding to the interconnection conductor) may be equal to the width of the corresponding pattern section. For example, the outer diameter of the interconnection conductor HL shown in Figure 10 is the same as the width of the corresponding actual lead pattern section 11, but is not limited to this; it may be smaller than the width of the corresponding actual lead pattern. For example, the outer diameter of the interconnection conductor HL shown in Figure 11 is smaller than the width of the corresponding actual lead pattern. This ensures uniformity of the interconnection through-hole opening because the material etched at each location on the same horizontal plane of the interconnection through-hole as it passes through the lead film layer is the same, i.e., the material of the pattern section. Furthermore, this design avoids short circuits or leaks caused by the interconnection conductor coming into contact with the actual lead pattern section 11 that does not need to be connected.

[0084] In this embodiment, the horizontal plane refers to a plane perpendicular to the vertical direction Z.

[0085] In other embodiments, if the design requirements are met, the diameter of the interconnection through-hole corresponding to the interconnection conductor may be larger than the width of the corresponding pattern portion. For example, the outer diameter of the interconnection conductor HL shown in Figure 12 is larger than the width of the corresponding actual lead pattern portion 11. As a result, the diameter of the interconnection through-hole can be enlarged, thereby reducing the difficulty of pattern alignment and controlling the etching process.

[0086] In some embodiments, the orthogonal projection of at least one interconnecting conductor in the vertical direction overlaps with multiple pattern sections located on the same lead film layer, and such a design can reduce the difficulty of machining the interconnecting through-holes corresponding to the interconnecting conductors. For example, if multiple pattern sections located on the same lead film layer include multiple actual lead pattern sections 11 that need to be bridged, then, as shown in Figure 13, the actual lead pattern section 11 on the left needs to cross the central dummy pattern section 13 to connect to the actual lead pattern section 11 on the right, and an interconnecting conductor HL is used to bridge the two.

[0087] In some embodiments, at least one pattern portion may be connected to a plurality of interconnecting conductors, and this pattern portion may be an actual lead pattern portion 11 or a dummy pattern portion 13. For example, as shown in Figure 14, the first lead film layer 1a may include an actual lead pattern portion 11 which spans a first region A1 and a second region A2 and is simultaneously connected to a first interconnecting conductor HL1 and a second interconnecting conductor HL2. The third lead film layer 1c may also include an actual lead pattern portion 11 which spans a second region A2 and a third region A3 and is simultaneously connected to a second interconnecting conductor HL2 and a third interconnecting conductor HL3. The fourth lead film layer 1d may include a dummy pattern portion 13, which spans the first region A1 and the second region A2 and is simultaneously connected to the first interconnecting conductor HL1 and the second interconnecting conductor HL2. Therefore, if the design requirements are met, the number of pattern portions within each lead film layer can be reduced, the patterning accuracy requirements in the lead film layer patterning process can be relaxed, and the cost in the patterning process can be reduced.

[0088] In the multilayer connection structure of the present invention, the pattern portion connected to the multiple interconnecting conductors is not limited to the position shown in Figure 14, and the number of connections to the interconnecting conductors is not limited to two, but may be three, four, or other numbers, depending on the specific design conditions.

[0089] In other embodiments, the multilayer connection structure of the present invention may include, in addition to the interconnecting conductors having actual function in the circuit as described above, dummy conductors XN arranged at a distance from the interconnecting conductors, as shown in Figure 15. Here, the dummy conductor XN is molded together with the first interconnecting conductor HL1, the second interconnecting conductor HL2, and the third interconnecting conductor HL3 shown in Figure 15, and the upper and lower ends of the dummy conductor XN are correspondingly flush with the upper and lower ends of the first interconnecting conductor HL1, the second interconnecting conductor HL2, and the third interconnecting conductor HL3, respectively, and the number and arrangement order of pattern portions in the laminated film layer penetrating the dummy conductor XN are exactly the same as those of the interconnecting conductors. In summary, the main difference between the dummy conductor XN and the interconnecting conductors is that at least one of the pattern portions connected by the interconnecting conductors is an actual lead pattern portion 11, whereas all the pattern portions connected by the dummy conductor XN are dummy pattern portions 13. The dummy conductor XN has no actual conductive function in the entire multilayer connection structure. By using interconnection through-holes corresponding to the dummy conductor XN, the density of interconnection through-holes in each region can be made uniform, etching shape defects caused by changes in etching density when etching the interconnection through-holes can be avoided, the stability of the structure can be improved after filling and forming the dummy conductor XN, and by arranging the patterns of the pattern portions communicating with the dummy conductor XN, other non-conductive functions such as shielding against crosstalk between interconnected devices can be achieved, but are not particularly limited in this invention.

[0090] Embodiments of the present invention further provide a manufacturing method for producing the multilayer connection structure described in any of the above embodiments. The manufacturing method of these embodiments may include the following steps.

[0091] In step S100, a laminated structure is formed by alternately arranging lead film layers 1 and insulating film layers 2 on the substrate 3 along the vertical direction Z. Here, for example, as shown in Figure 16, multiple lead film layers 1 are provided, and at least one insulating film layer 2 is provided, and each lead film layer 1 includes at least an actual lead pattern portion 11. However, it should be understood that the laminated structure of this embodiment is not limited to Figure 16 and can be appropriately adjusted according to actual design requirements.

[0092] In step S200, as shown in Figure 17, after forming the uppermost film layer of the laminated structure, multiple interconnect conductors HL are formed, and each interconnect conductor HL penetrates all film layers on at least the lowest lead film layer 1 of the laminated structure and connects to at least one actual lead pattern portion 11 of the lead film layer 1, and at least two interconnect conductors HL have correspondingly connected actual lead pattern portions 11 located on the lead film layer 1, the number and / or positions of which are not exactly the same. It should be understood that the multilayer connection structure of this embodiment is not limited to that shown in Figure 17 and can be appropriately adjusted according to actual design requirements.

[0093] In some embodiments, the step of forming a plurality of interconnecting conductors HL in step S200 may specifically include the following steps:

[0094] In step S201, the laminated structure is patterned using an etching process to form a plurality of spaced interconnection through-holes ZJ, such as the intermediate structure for creating interconnection through-holes in the laminated structure shown in Figure 18. The interconnection through-holes ZJ penetrate all film layers above the bottommost lead film layer 1 in the laminated structure and expose the actual lead pattern portion 11 of at least one lead film layer 1, and the positions of the lead film layer 1 where the actual lead pattern portion 11 is located correspondingly exposed by at least two interconnection through-holes ZJ are not exactly the same. It should be understood that the intermediate structure in this embodiment is not limited to that shown in Figure 18 and can be adjusted according to actual design requirements.

[0095] In step S202, conductive material is filled into each interconnection through-hole ZJ to form interconnection conductors HL within each interconnection through-hole ZJ. A specific structure can be seen in Figure 17.

[0096] For example, in step S202, a conductor material film DT may be formed first, as shown in Figure 19, which includes conductor material to be filled into each interconnection through-hole ZJ and also includes conductor material to cover the top surface of the laminated structure. Then, as shown in Figure 17, the conductor material on the top surface of the laminated structure is removed to form a plurality of interconnection conductors HL arranged at intervals, but is not limited to this, and the conductor material on the top surface of the laminated structure does not have to be completely removed, and some may be retained to allow bridging of the plurality of interconnection conductors.

[0097] In some embodiments, to ensure uniformity of interconnection through-holes, as shown in Figure 16, dummy pattern portions 13 can be designed in at least one lead film layer 1 that are separated from the actual lead pattern portions 11, and as shown in Figure 18, the interconnection through-holes ZJ penetrate the pattern portions of each lead film layer 1 on the bottom lead film layer 1 along the vertical direction Z, and the pattern portions through which the interconnection through-holes ZJ penetrate along the vertical direction Z include the actual lead pattern portions 11 and / or the dummy pattern portions 13.

[0098] In one embodiment, the step of forming a lead film layer 1 including an actual lead pattern portion 11 and a dummy pattern portion 13 includes the following steps.

[0099] In step S1001, a conductive film is formed on the substrate 3.

[0100] In step S1002, the actual lead pattern portion 11 and the dummy pattern portion 13 are formed simultaneously by patterning the conductive film.

[0101] In another embodiment, the step of forming the lead film layer 1, which includes the actual lead pattern portion 11 and the dummy pattern portion 13, includes the following steps.

[0102] In step S1003, a conductive film is formed on the substrate 3.

[0103] In step S1004, a patterning process is performed on the conductive film using a single patterning process to simultaneously form a portion of the actual lead pattern 11 and at least one intermediate pattern portion, with the intermediate pattern portion and the actual lead pattern 11 being separated from each other.

[0104] In step S1005, a single patterning process is used to apply a patterning treatment to the intermediate pattern section, thereby simultaneously forming another part of the actual lead pattern section 11 and the dummy pattern section 13.

[0105] Embodiments of the present invention also provide semiconductor devices, which may be DRAM (Dynamic Random Access Memory), but are not limited thereto. Other types of structures, such as FEOL (Front End Of Line) semiconductor structures or BEOL (Back End Of Line) semiconductor structures, are also provided, but no examples are given here.

[0106] In this embodiment, as shown in Figure 17, the semiconductor device may include a substrate 3 and at least one multilayer connection structure, the multilayer connection structure may be formed on the substrate 3, and the design scheme of this multilayer connection structure may refer to what was described in one of the previous embodiments and will not be repeated here. In some embodiments, the semiconductor substrate includes a substrate 3 and a plurality of multilayer connection structures, the plurality of multilayer connection structures may be distributed horizontally on the substrate 3, or the plurality of multilayer connection structures may be stacked vertically on the substrate 3 and formed thereon, depending on the design requirements.

[0107] The vertical direction Z may be perpendicular or nearly perpendicular to the substrate 3 in order to mitigate the difficulties in manufacturing the multilayer connection structure.

[0108] In some embodiments, the substrate 3 may be a semiconductor substrate, but is not limited to this; it may be another type of substrate 3, and can be determined depending on the specific circumstances.

[0109] In this embodiment, the orthographic projection of the multilayer connection structure onto the substrate 3 can completely cover the substrate 3, but is not limited to this; it can also be orthographically projected onto a localized area of ​​the substrate 3, depending on the design requirements.

[0110] Furthermore, terms such as “first,” “second,” “third,” and “fourth” are used solely for descriptive purposes and should not be understood as indicating or implying relative importance or implicitly indicating the quantity of the technical features described. Accordingly, features to which “first,” “second,” “third,” and “fourth” are limited may explicitly or implicitly include one or more such features. In the description of this application, “multiple” means two or more unless specifically and explicitly limited.

[0111] In this specification, the terms “several examples” and “exemplary” mean that the specific features, structures, materials, or properties described in relation to that example are included in at least one example of this application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same example. Furthermore, the specific features, structures, materials, or properties described may be combined in appropriate ways in any one or more examples. Furthermore, a person skilled in the art may combine different examples and features of different examples described herein, provided that they do not conflict with each other.

[0112] Although embodiments of this application have been shown and described above, these embodiments are illustrative and should not be interpreted as limitations of this application. Those skilled in the art will understand that any changes, modifications, substitutions, and alterations to the above embodiments can be made within the scope of this application, and that any changes or modifications made in accordance with the claims and description of this application should all fall within the scope of this application. [Explanation of symbols]

[0113] 1. Lead film layer; 1a. First lead film layer; 1b. Second lead film layer; 1c. Third lead film layer; 1d. Fourth lead film layer; 1e. Fifth lead film layer; 10. Lead; 11. Actual lead pattern section; 12. Insulation separation section; 13. Dummy pattern section; 2. Insulating film layer; 2a. First insulating film layer; 2b. Second insulating film layer; 2c. Third insulating film layer; 2d. Fourth insulating film layer; 2e. Fifth insulating film layer; 2f. Sixth insulating film layer; 3. Circuit board; A1, first region; A2, second region; A3, third region; A4, fourth region; DT, conductor material film; HL, interconnecting conductor; HL1, first interconnecting conductor; HL2, second interconnecting conductor; HL3, third interconnecting conductor; HL4, fourth interconnecting conductor; Z, vertical direction; ZJ, interconnecting through hole; ZJ1, first interconnecting through hole; ZJ2, second interconnecting through hole; ZJ3, third interconnecting through hole; ZJ4, fourth interconnecting through hole.

Claims

1. It comprises a laminated structure, a plurality of interconnection through holes arranged at intervals in the horizontal direction, and interconnection conductors that fill the interconnection through holes, The laminated structure comprises a plurality of lead film layers and at least one insulating film layer, wherein the lead film layers and the insulating film layer are arranged alternately along the vertical direction, and each lead film layer includes at least an actual lead pattern portion. The interconnection through-holes expose the actual lead pattern portion of at least one lead film layer, and the positions of the lead film layers on which the actual lead pattern portions are located correspondingly exposed by at least two of the interconnection through-holes are not exactly the same, and each of the interconnection through-holes penetrates all film layers above at least the lowest lead film layer in the laminated structure. At least one of the lead film layers on the lowest lead film layer in the laminated structure further includes a dummy pattern portion separated from the actual lead pattern portion, Each interconnection through-hole penetrates the pattern portion of each lead film layer on the lowest lead film layer in the vertical direction, and the pattern portion through which the interconnection through-hole penetrates in the vertical direction includes the actual lead pattern portion and / or the dummy pattern portion. A multilayer connection structure characterized by the following:

2. The upper end faces of any of the interconnecting through holes are flush with each other. The multilayer connection structure according to feature 1.

3. The upper end surface of the interconnecting conductor is flush with the upper end surface of the laminated structure, and / or Multiple insulating film layers are provided, and the uppermost layer of the laminated structure is the insulating film layer, and / or The aforementioned lead film layer is provided in three or more layers. The multilayer connection structure according to feature 2.

4. In the same lead film layer, the lower end surface of the dummy pattern portion is flush with the lower end surface of the actual lead pattern portion, and the upper end surface of the dummy pattern portion is flush with the upper end surface of the actual lead pattern portion. The dummy pattern portion overlaps with at least one of the interconnection through holes in the vertical direction and is exposed. The multilayer connection structure according to feature 1.

5. The lower end faces of any of the aforementioned interconnecting through holes are flush with each other. The interconnection through-hole penetrates the pattern portion of the lowest lead film layer, or The lower end of the interconnection through-hole is embedded within the pattern portion of the lowest lead film layer. The multilayer connection structure according to feature 4.

6. The vertical orthogonal projection of at least one of the interconnection through-holes is entirely located within one patterned portion of each of the lead film layers, and / or The vertical orthographic projection of at least one of the interconnection through holes overlaps with at least one patterned portion located in the same layer of the lead film layer, and / or At least one patterned portion is exposed by a plurality of interconnecting through holes. The multilayer connection structure according to feature 4.

7. A semiconductor device comprising a substrate and at least one multilayer connection structure according to any one of claims 1 to 6 formed on the substrate.

8. A laminated structure is formed by alternately arranging lead film layers and insulating film layers vertically on a substrate, wherein multiple lead film layers are provided, and at least one insulating film layer is provided, and each lead film layer includes at least an actual lead pattern portion. After forming the uppermost film layer of the laminated structure, a patterning process is performed on the laminated structure using an etching process to form a plurality of interconnection through-holes spaced horizontally, wherein the interconnection through-holes penetrate all film layers above the lowest lead film layer in the laminated structure, expose the actual lead pattern portion of at least one of the lead film layers, and the positions of the lead film layers where the actual lead pattern portions exposed by at least two of the interconnection through-holes are located are not exactly the same. The step includes filling each of the interconnection through holes with a conductive material to form an interconnection conductor in each interconnection through hole, At least one of the lead film layers further includes a dummy pattern portion separated from the actual lead pattern portion, the interconnection through-holes penetrate the pattern portion of each of the lead film layers on the lowest lead film layer in the vertical direction, and the pattern portion through which the interconnection through-holes penetrate in the vertical direction includes the actual lead pattern portion and / or the dummy pattern portion. A method for manufacturing a multilayer connection structure characterized by the following:

9. The step of forming a lead film layer including the actual lead pattern portion and the dummy pattern portion is: The steps include forming a conductive film on the substrate, The step includes simultaneously forming the actual lead pattern portion and the dummy pattern portion by performing a patterning process on the conductive film. The method for manufacturing a multilayer connection structure according to claim 8.

10. The step of forming a lead film layer including the actual lead pattern portion and the dummy pattern portion is: The steps include forming a conductive film on the substrate, The process involves a step in which, by applying a patterning treatment to the conductive film using a single patterning process, a portion of the actual lead pattern and at least one intermediate pattern are simultaneously formed, wherein the intermediate pattern and the actual lead pattern are separated from each other. The process includes the step of simultaneously forming another portion of the actual lead pattern and the dummy pattern by applying a patterning process to the intermediate pattern portion using a single patterning process. The method for manufacturing a multilayer connection structure according to claim 8.

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