Vapor deposition system and vapor deposition method

Abstract

To suppress occurrence of damage such as cracks in a mask when pressing the mask to deform the mask on the whole.SOLUTION: A vapor deposition system includes a mask and a first pressing mechanism for pressing the mask toward a substrate. The mask includes: a first layer 30 including a mask first surface 301, a mask second surface 302 and at least one first opening 31; and a second layer 40 including a mask third surface 401 facing the mask second surface, a mask fourth surface 402 and a plurality of second openings 41 overlapped on the first opening in a plane view. The first pressing mechanism includes: a first pressing member 71 including a first reference surface 721 facing the mask first surface and a first pressing layer 73 projected toward the mask from the first reference surface in a first movement direction facing the mask first surface; and a first movement mechanism 74 for moving the first pressing member in the first movement direction so as to advance the first pressing layer to the first opening to push the second layer.SELECTED DRAWING: Figure 9

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a vapor deposition system and a vapor deposition method.

Background Art

[0002] As a method for forming a precise pattern, a vapor deposition method is known. In the vapor deposition method, first, a mask having an opening is combined with a substrate. Subsequently, a vapor deposition material is adhered to the substrate through the opening of the mask. Thereby, a vapor deposition layer containing the vapor deposition material can be formed on the substrate in a pattern corresponding to the pattern of the opening of the mask. The vapor deposition method is used, for example, as a method for forming pixels of an organic EL display device.

[0003] The vapor deposition method is performed in a state where the ends of the substrate and the mask are held so that the substrate and the mask overlap in the vertical direction. The substrate and the mask bend downward due to gravity. When the bending becomes large and a gap occurs between the substrate and the mask, the position of the vapor deposition layer deviates from the ideal position. To solve such a problem, for example, Patent Document 1 proposes pressing the mask toward the substrate using a mask pressing member.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] When the mask is pressed to deform the mask as a whole, the mask may be damaged such as cracked.

[0006] Embodiments of the present disclosure aim to provide a vapor deposition system and a vapor deposition method that can effectively solve such problems.

Means for Solving the Problems

[0007] One embodiment of the present disclosure is a vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first pressing mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first pressing mechanism is a vapor deposition system comprising: a first pressing member including a first reference surface facing the first surface of the mask and a first pressing layer protruding from the first reference surface toward the mask in a first moving direction toward the first surface of the mask; and a first moving mechanism for moving the first pressing member in the first moving direction such that the first pressing layer enters the first opening and presses the second layer.

[0008] In a vapor deposition system according to one embodiment of the present disclosure, the thickness of the first press layer may be greater than the thickness of the first layer.

[0009] In a vapor deposition system according to one embodiment of the present disclosure, the first press layer may include a press surface that presses against the second layer. The ratio of the area of ​​the press surface to the area of ​​the first opening may be 0.70 or greater.

[0010] In a deposition system according to one embodiment of the present disclosure, the first layer may contain silicon.

[0011] In a deposition system according to one embodiment of the present disclosure, the thickness of the first layer may be 300 μm or more.

[0012] In a vapor deposition system according to one embodiment of the present disclosure, the second layer may include a resin material.

[0013] In a deposition system according to one embodiment of the present disclosure, the second layer may contain particles.

[0014] In a deposition system according to one embodiment of the present disclosure, the second layer does not need to contain particles.

[0015] In a vapor deposition system according to one embodiment of the present disclosure, the first press layer may include a resin material.

[0016] In a vapor deposition system according to one embodiment of the present disclosure, the first press member may include a first support substrate containing silicon and constituting the first reference surface.

[0017] In a vapor deposition system according to one embodiment of the present disclosure, the first press layer may include a press surface for pressing the second layer and a groove located on the press surface.

[0018] In a vapor deposition system according to one embodiment of the present disclosure, the first press mechanism may include a plurality of first press layers that overlap one of the first openings in a plan view.

[0019] In a vapor deposition system according to one embodiment of the present disclosure, the first press layer may include a press surface, the press surface may include a first press surface that presses the second layer, and a second press surface that is located inside the first press surface in a plan view and presses the second layer at a position close to a first reference plane relative to the first press surface.

[0020] In a vapor deposition system according to an embodiment of the present disclosure, the first pressing layer may include a pressing surface that presses the second layer, and the pressing surface may be curved so as to be convex toward the second layer.

[0021] A vapor deposition system according to an embodiment of the present disclosure may include a second pressing mechanism that presses the substrate toward the mask.

[0022] In a vapor deposition system according to an embodiment of the present disclosure, the second pressing mechanism may include a second pressing member including a second reference surface facing the first surface of the substrate and a second pressing layer protruding from the second reference surface toward the substrate in the first moving direction. The second pressing layer may overlap the first opening in a plan view.

[0023] In a vapor deposition system according to an embodiment of the present disclosure, the second pressing mechanism may include a second pressing member including a second reference surface facing the first surface of the substrate and a second pressing layer protruding from the second reference surface toward the substrate in the first moving direction. The second pressing layer may overlap the second surface of the mask of the first layer in a plan view.

[0024] A vapor deposition system according to an embodiment of the present disclosure may include a first chamber in which the first pressing mechanism is disposed, a second chamber in which a vapor deposition source is disposed, a connection path connecting the first chamber and the second chamber, and a transfer mechanism that transfers the substrate and the mask from the first chamber to the second chamber through the connection path.

[0025] An embodiment of the present disclosure is a vapor deposition method of attaching a vapor deposition material to the second surface of the substrate using the vapor deposition system described above, a pressing step in which the first pressing mechanism presses the mask toward the substrate, and a vapor deposition step of attaching a vapor deposition material to the substrate through the second opening of the mask.

[0026] A deposition method according to one embodiment of the present disclosure may include, after the pressing step, a step of moving the first pressing member to a position that does not overlap with the mask in a plan view. [Effects of the Invention]

[0027] According to the embodiments of this disclosure, it is possible to suppress the formation of gaps between the substrate and the mask. [Brief explanation of the drawing]

[0028] [Figure 1] This is a plan view showing an example of an organic device. [Figure 2] This is a diagram showing an example of a vapor deposition system. [Figure 3] This is a diagram showing an example of a vapor deposition apparatus. [Figure 4A] This is a plan view showing an example of a mask as seen from the side of the incident surface. [Figure 4B] This is a plan view showing one modified example of a mask as seen from the side of the incident surface. [Figure 4C] This is a plan view showing one modified example of a mask as seen from the side of the incident surface. [Figure 5] This is a plan view showing an example of a mask as seen from the exit surface. [Figure 6A] Figure 4A is a cross-sectional view of the mask along the line VI-VI. [Figure 6B] This is a cross-sectional view showing an example of the effective area. [Figure 7] This is a cross-sectional view showing an example of the configuration of the second layer. [Figure 8] This is a diagram showing an example of a press device. [Figure 9] This is a cross-sectional view showing an example of the first press mechanism. [Figure 10] This diagram shows the positional relationship between the press surface and the first opening. [Figure 11] This is a cross-sectional view showing an example of a mask manufacturing method. [Figure 12] This is a cross-sectional view showing an example of a mask manufacturing method. [Figure 13]This is a cross-sectional view showing an example of a mask manufacturing method. [Figure 14] This is a cross-sectional view showing an example of a mask manufacturing method. [Figure 15] This is a cross-sectional view showing an example of a mask manufacturing method. [Figure 16] This is a cross-sectional view showing an example of a mask manufacturing method. [Figure 17] This is a cross-sectional view showing an example of the pressing process. [Figure 18] This is a cross-sectional view showing an example of the pressing process. [Figure 19] This is a cross-sectional view showing an example of a transport process. [Figure 20] This is a cross-sectional view showing an example of a transport process. [Figure 21] This is a diagram showing an example of a vapor deposition system. [Figure 22] This is a cross-sectional view showing an example of the pressing process. [Figure 23] This is a cross-sectional view showing an example of a transport process. [Figure 24] This is a cross-sectional view showing an example of a transport process. [Figure 25] This is a cross-sectional view showing an example of the second press mechanism. [Figure 26] This is a cross-sectional view showing an example of the second press mechanism. [Figure 27] This is a cross-sectional view showing an example of the first press mechanism. [Figure 28] This is a cross-sectional view showing an example of the first press mechanism. [Figure 29] This is a cross-sectional view showing an example of the first press mechanism. [Figure 30] This is a cross-sectional view showing an example of the first press mechanism. [Figure 31] This is a cross-sectional view showing an example of the first press mechanism. [Figure 32] This is a diagram showing an example of a vapor deposition system. [Figure 33] This is a cross-sectional view showing an example of the pressing process. [Figure 34] This is a cross-sectional view showing an example of the pressing process. [Figure 35]This is a cross-sectional view showing an example of the vapor deposition process. [Figure 36] This is a plan view showing an example of a mask. [Figure 37] This is a plan view showing an example of a mask. [Figure 38] This is a plan view showing an example of a mask. [Figure 39] This is a plan view showing an example of a mask. [Figure 40] This figure shows an example of a device equipped with organic devices. [Modes for carrying out the invention]

[0029] (First Embodiment) The structure of a mask according to one embodiment and its manufacturing method will be described in detail with reference to the drawings. The embodiments shown below are examples of embodiments of the present disclosure, and the present disclosure is not to be construed as being limited to these embodiments. In this specification, terms such as “plate,” “substrate,” “sheet,” and “film” are not distinguished from each other solely on the basis of differences in name. For example, “plate” is a concept that includes members that may be called sheets or films. “Surface” refers to a surface that coincides with the planar direction of the member when the member in question is viewed in an overall and broad manner. In this specification, terms such as “parallel” and “orthogonal,” as well as values ​​of length and angle, which specify the shape, geometric conditions, and their degree, are to be interpreted not in a strict sense, but to include a range that can be expected to have a similar function.

[0030] In this specification, if multiple candidate upper limits and multiple candidate lower limits are given for a certain parameter, the numerical range of that parameter may be constructed by combining any one candidate upper limit and any one candidate lower limit. For example, consider the case where it is stated that "Parameter B is, for example, A1 or greater, and may be A2 or greater, and may be A3 or greater. Parameter B is, for example, A4 or less, and may be A5 or less, and may be A6 or less." In this case, the numerical range of parameter B may be A1 or greater and A4 or less, A1 or greater and A5 or less, A1 or greater and A6 or less, A2 or greater and A4 or less, A2 or greater and A5 or less, A2 or greater and A6 or less, A3 or greater and A4 or less, A3 or greater and A5 or less, and A3 or greater and A6 or less.

[0031] In the drawings referenced in this embodiment, identical or similar reference numerals are used to denote identical parts or parts with similar functions, and repeated descriptions may be omitted. Furthermore, the dimensional ratios in the drawings may differ from the actual ratios for illustrative purposes, and some components may be omitted from the drawings.

[0032] In one embodiment of this specification, an example is described in which a mask is used to form an organic layer or electrode on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form layers such as organic layers or electrodes in a device for displaying or projecting images or videos to represent virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form layers in display devices other than organic EL displays, such as electrodes in liquid crystal displays. Furthermore, the mask of this embodiment may be used to form layers in organic devices other than display devices, such as organic layers or electrodes in pressure sensors.

[0033] The organic device 100 will now be described. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0034] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along the in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located opposite the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, red pixels, blue pixels, and green pixels.

[0035] The element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130. The organic layer 130 is formed by a deposition process using a mask.

[0036] The organic device 100 may include an insulating layer 160. The insulating layer 160 is located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 contains, for example, polyimide. The insulating layer 160 may overlap the edges of the first electrodes 120. "Plan view" means viewing the object along the direction normal to the surface of a plate-like member such as a substrate 110.

[0037] The substrate 110 may be an insulating material. The material of the substrate 110 may be a rigid material or a flexible material. Rigid materials are materials with poor flexibility, such as silicon, quartz glass, Pyrex® glass, and synthetic quartz plates. Flexible materials are materials with flexibility, such as resin films, optical resin plates, and thin glass. The substrate 110 may have a planar shape similar to that of a silicon wafer used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment that performs semiconductor manufacturing processes. For example, a first electrode 120, an insulating layer 160, etc., can be formed on the substrate 110 using equipment that performs semiconductor manufacturing processes.

[0038] The element 115 is configured to perform some function when a voltage is applied between the first electrode 120 and the second electrode 140, or when a current flows between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that constitutes an image.

[0039] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or other conductive inorganic material. The first electrode 120 may also include a transparent and conductive metal oxide, such as indium tin oxide.

[0040] The organic layer 130 contains an organic material. When the organic layer 130 is energized, it can perform some function. Energization means that a voltage is applied to the organic layer 130 or that an electric current flows through the organic layer 130. The organic layer 130 can be an emissive layer that emits light when energized, or a layer whose light transmittance or refractive index changes when energized. The organic layer 130 may also contain an organic semiconductor material.

[0041] As shown in Figure 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown in the figure, the organic layer 130 may also include a third organic layer included in the third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0042] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is driven. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from either the second electrode 140 side or the first electrode 120 side.

[0043] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0044] The second electrode 140 may contain a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, carbon, and alloys thereof. As shown in Figure 1, the second electrode 140 may extend across two adjacent organic layers 130 in a plan view.

[0045] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Figure 2 shows an example of a vapor deposition system 1. The vapor deposition system 1 includes a press device 10 and a vapor deposition apparatus 15. The vapor deposition apparatus 15 performs a vapor deposition process in which a vapor deposition material is deposited onto the substrate 110 using a mask 20. The press device 10 performs a pressing process in which the mask 20 is pushed toward the substrate 110 before the vapor deposition process. As shown by the arrows in Figure 2, the vapor deposition system 1 transports the mask 20 to the vapor deposition apparatus 15 after the pressing process is performed in the press device 10.

[0046] The deposition system 1 may include a transport mechanism 17 for transporting the mask 20 from the press device 10 to the deposition device 15. The transport mechanism 17 transports the mask 20 in a second direction of movement F2. The second direction of movement F2 is, for example, horizontal. The transport mechanism 17 may include an arm that moves or extends horizontally. The transport mechanism 17 may be located in the deposition device 15 or in the press device 10.

[0047] The press device 10 may include a first chamber 11. The deposition device 15 may include a second chamber 16. The deposition system 1 may include a connecting passage 2 connecting the first chamber 11 and the second chamber 16. The deposition system 1 may include a shutter 3 that separates the first chamber 11 from the second chamber 16. The shutter 3 may be located in the connecting passage 2.

[0048] Figure 3 shows an example of a deposition apparatus 15. The deposition apparatus 15 may include a deposition source 6, a heater 8, and a mask 20 inside. The deposition apparatus 15 may further include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 15. The deposition source 6 is, for example, a crucible. The deposition source 6 contains a deposition material 7, such as an organic material or a metallic material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere.

[0049] The mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41. The incident surface 201 faces the deposition source 6. The exit surface 202 is located on the opposite side of the incident surface 201. The exit surface 202 faces the first surface 111 of the substrate 110. A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the second opening 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110.

[0050] Next, the mask 20 will be described in detail. Figure 4A is a plan view showing an example of the mask 20 as seen from the side of the incident surface 201. Figure 5 is a plan view showing an example of the mask 20 as seen from the side of the exit surface 202. Figure 6A is a cross-sectional view of the mask 20 in Figure 4A along the line VI-VI.

[0051] As shown in Figure 6A, the mask 20 comprises a first layer 30 and a second layer 40 arranged sequentially from the incident surface 201 toward the exit surface 202. The first layer 30 may contain silicon or a silicon compound. The silicon compound is, for example, silicon carbide (SiC). The second layer 40 may contain a resin material. The mask 20 may also include an intermediate layer 50 located between the first layer 30 and the second layer 40. Each layer will be described below.

[0052] The first layer 30 includes a first mask surface 301, a second mask surface 302, a first opening 31, and a first wall surface 32. The first mask surface 301 is located on the incident surface 201. The first mask surface 301 may constitute the incident surface 201. The second mask surface 302 is located on the opposite side of the first mask surface 301.

[0053] The first opening 31 penetrates from the first surface 301 of the mask to the second surface 302 of the mask. As shown in Figure 4A, the first layer 30 may contain a plurality of first openings 31. The plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2. The second direction D2 may be perpendicular to the first direction D1.

[0054] The first aperture 31 may correspond to one screen of the organic EL display device. The mask 20 shown in Figure 4A can simultaneously form patterns of organic layers corresponding to multiple screens on the substrate 110. As shown in Figure 4A, the first aperture 31 may have a rectangular contour in plan view. Plan view means, for example, viewing the object along the normal direction of the first surface 301 of the mask.

[0055] Figures 4B and 4C are plan views showing other examples of the mask 20, respectively. As shown in Figure 4B, the corners of the contour of the first opening 31 may include curves. As shown in Figure 4C, the contour of the first opening 31 may be octagonal. According to the examples shown in Figures 4B and 4C, when stress is applied to the contour of the first opening 31, it is possible to suppress the concentration of stress at the corners. This prevents the first layer 30 from breaking.

[0056] The first wall surface 32 is the surface of the first layer 30 facing the first opening 31. In the example shown in Figure 6A, the first wall surface 32 extends along the normal direction D3 of the first mask surface 301.

[0057] As shown in Figure 4A, the region of the first layer 30 in which the first opening 31 is not formed may be divided into an outer region 35 and an inner region 36. The inner region 36 is the region located between two adjacent first openings 31 in a plan view. The outer region 35 is the region located between the outer edge 303 of the first layer 30 and the first opening 31 in a plan view. As shown in Figure 4A, the inner region 36 may extend in a first direction D1 and a second direction D2.

[0058] As shown in Figures 4A and 5, the first layer 30 may include alignment marks 39. The alignment marks 39 are formed, for example, on the second surface 302 of the mask. The alignment marks 39 may also be formed on the first surface 301 of the mask. The alignment marks 39 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 is transparent to visible light, the alignment marks 39 can be seen through the substrate 110.

[0059] As shown in Figures 4A and 5, the alignment mark 39 may have a cross-shaped contour in plan view. Although not shown, the alignment mark 39 may have a contour other than a cross, such as a rectangle or a circle. The alignment mark 39 may be located in the outer region 35 or in the inner region 36. The alignment mark 39 may be positioned to coincide with a straight line passing through the center point of the first layer 30 in plan view. In the example of silicon in Figure 4A, the alignment mark 39 coincides with the center line D1 extending in the first direction D1. If the first layer 30 is a silicon wafer, the center point may be the center point of a circle that coincides with the contour of the silicon wafer.

[0060] The shape of alignment mark 39 in the cross-sectional view is arbitrary. For example, the alignment mark 39 may include a recess located on the first surface 301 of the mask or the second surface 302 of the mask. The alignment mark 39 may also include a hole penetrating from the first surface 301 of the mask to the second surface 302 of the mask. The recess and hole may be formed by etching the first surface 301 of the mask or the second surface 302 of the mask. The recess and hole may also be formed by irradiating the first surface 301 of the mask or the second surface 302 of the mask with a laser. For example, the alignment mark 39 may include a layer located on the first surface 301 of the mask or the second surface 302 of the mask. The layer is formed of a different material than the first layer 30. If a layer is formed on the second surface 302 of the mask, the second layer 40 and the intermediate layer 50 may include through holes that overlap the layers. This can improve the visibility of the alignment mark 39. Alignment marks 39 may be formed on layers other than the first layer 30.

[0061] The first layer 30 is fabricated, for example, by processing a silicon wafer. As shown in Figure 3A, the outer edge 303 of the first layer 30 may include a linear portion. The linear portion is also called an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also called a notch. The orientation flat and notch represent the crystal orientation of the silicon wafer.

[0062] The maximum dimension S1 of the first layer 30 in plan view is, for example, 100 mm or more, may be 150 mm or more, or 200 mm or more. The dimension S1 is, for example, 500 mm or less, may be 400 mm or less, or 300 mm or less.

[0063] The dimension S2 of the first opening 31 in the direction in which the first openings 31 are aligned is, for example, 5 mm or more, may be 10 mm or more, or may be 20 mm or more. The dimension S2 is, for example, 100 mm or less, may be 50 mm or less, or may be 30 mm or less.

[0064] The spacing S3 between two first openings 31 in the direction in which the first openings 31 are aligned is, for example, 0.1 mm or more, may be 0.5 mm or more, or may be 1.0 mm or more. The spacing S3 is, for example, 20 mm or less, may be 15 mm or less, or may be 10 mm or less.

[0065] The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 is, for example, 50 μm or more, may be 100 μm or more, may be 200 μm or more, or may be 300 μm or more. The thickness T1 is, for example, 1000 μm or less, may be 800 μm or less, or may be 600 μm or less.

[0066] Next, the second layer 40 will be described. The second layer 40 includes a third mask surface 401, a fourth mask surface 402, and a plurality of second openings 41. The third mask surface 401 is opposite the second mask surface 302 of the first layer 30. The fourth mask surface 402 is located on the opposite side of the third mask surface 401.

[0067] The second aperture 41 penetrates from the third surface 401 of the mask to the fourth surface 402 of the mask. One second aperture 41 corresponds to one organic layer 130. A group of regularly arranged second apertures 41 corresponds to one screen of the organic EL display device. As shown in Figures 4A and 5, a group of regularly arranged second apertures 41 may overlap with one first aperture 31 in a plan view. The group of second apertures 41 is supported by a first layer 30 formed by processing a single material such as a silicon wafer.

[0068] The second layer 40 may be divided into a peripheral region 43 and an effective region 44. The peripheral region 43 is the region that overlaps with the first layer 30 in a plan view. The effective region 44 is the region in which a group of regularly arranged second openings 41 are distributed.

[0069] Figure 6B is a cross-sectional view showing an example of the effective region 44. The second layer 40 includes a second wall surface 42 facing the second opening 41. As shown in Figure 6B, the second wall surface 42 may include a tapered surface 42a that widens away from the center of the second opening 41 as it approaches the third mask surface 401. Including a tapered surface 42a in the second wall surface 42 can suppress the occurrence of shadows in the vicinity of the second wall surface 42. A shadow is a phenomenon in which the thickness of the deposited layer formed near the wall surface of the second opening 41 is smaller than the thickness of the deposited layer formed at the center of the second opening 41. Shadows are caused by the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 getting into the gap between the mask 20 and the substrate 110, etc.

[0070] In Figure 6B, the reference numeral S8 represents the width of the tapered surface 42a in the direction in which the second openings 41 are aligned. The width S8 is, for example, 0.2 μm or more, may be 0.5 μm or more, or may be 1.0 μm or more. The width S7 is, for example, 25 μm or less, may be 20 μm or less, or may be 10 μm or less.

[0071] In Figure 6B, the symbol θ1 represents the angle between the second wall surface 42 and the fourth mask surface 402. The angle θ1 is, for example, 50° or more, may be 55° or more, or 60° or more. The angle θ1 is, for example, less than 90°, may be 85° or less, or 80° or less.

[0072] The resin material for the second layer 40 is polyimide, polyamide, polyamide-imide, polyester, polyethylene, polyvinyl alcohol, polypropylene, polycarbonate, polystyrene, polyacrylonitrile, ethylene vinyl acetate copolymer, ethylene-vinyl alcohol copolymer, ethylene-methacrylic acid copolymer, polyvinyl chloride, polyvinylidene chloride, cellophane, ionomer, etc. The second layer 40 may consist of a single resin layer or may contain multiple resin layers.

[0073] The thickness of the second layer 40 is less than the thickness T1 of the first layer 30. The thickness of the second layer 40 is, for example, 25 μm or less, and may be 10 μm or less, or 5 μm or less. This can suppress the occurrence of shadows. The thickness of the second layer 40 is, for example, 0.5 μm or more, and may be 1.0 μm or more, or 2.0 μm or more. This can suppress the occurrence of defects such as pinholes or deformations in the second layer 40.

[0074] The dimension S4 of the second aperture 41 in plan view is, for example, 1 μm or more, may be 2 μm or more, or 3 μm or more. The dimension S4 is, for example, 25 μm or less, may be 10 μm or less, or 5 μm or less.

[0075] The spacing S5 between two second openings 41 in the direction in which the second openings 41 are aligned is, for example, 1 μm or more, may be 2 μm or more, or may be 3 μm or more. The dimension S4 is, for example, 25 μm or less, may be 10 μm or less, or may be 5 μm or less.

[0076] The distance S6 between the first wall surface 32 and the second opening 41 in a plan view may be greater than the distance S5. This helps to suppress the occurrence of shadows in the second opening 41 that is close to the first wall surface 32.

[0077] The second layer 40 may include alignment marks. The alignment marks of the second layer 40 may be formed separately from the alignment marks 39 of the first layer 30, or they may be formed in place of the alignment marks 39 of the first layer 30.

[0078] The alignment marks of the second layer 40 may include recesses located on the third surface 401 or the fourth surface 402 of the mask. The alignment marks of the second layer 40 may include holes penetrating from the third surface 401 to the fourth surface 402 of the mask. The recesses and holes may be formed by etching the third surface 401 or the fourth surface 402 of the mask. The recesses and holes may also be formed by irradiating the third surface 401 or the fourth surface 402 of the mask with a laser.

[0079] Figure 7 is a cross-sectional view showing an example of the configuration of the second layer 40. The second layer 40 may be formed by applying a coating material containing a resin material 45 onto the first layer 30.

[0080] After coating the first layer 30 with the material for the second layer 40, a heating step may be performed to heat the second layer 40. This allows the second layer 40 to solidify. For example, by coating the first layer 30 with a coating material containing polyamic acid, which is a precursor of polyimide, and then performing a heating step, an imidation reaction can be induced. This allows the second layer 40 containing polyimide to be formed. The temperature of the heating step may be, for example, 200°C or higher, or 300°C or higher. The temperature of the heating step may be, for example, 500°C or lower, or 400°C or lower. The duration of the heating step may be, for example, 10 minutes or more, or 20 minutes or more. The duration of the heating step may be, for example, 200 minutes or less, or 100 minutes or less.

[0081] A release layer may be formed on the fourth surface 402 of the mask of the second layer 40. The release layer contains a release agent. Forming a release layer makes it easier to separate the mask 20 from the substrate 110.

[0082] Next, the intermediate layer 50 will be described. The intermediate layer 50 includes a layer that performs some function for the first layer 30 or the second layer 40. For example, the intermediate layer 50 includes a first intermediate layer 51. In the example shown in Figure 6A, the first intermediate layer 51 is located between the first layer 30 and the second layer 40.

[0083] The first intermediate layer 51 may function as a stopper layer that stops etching in the process of processing the first layer 30 by etching. Specifically, the first intermediate layer 51 has resistance to the etchant that etches the first layer 30. The first intermediate layer 51 includes aluminum, aluminum alloy, titanium, titanium alloy, or silicon oxide.

[0084] The thickness of the first intermediate layer 51 may be less than the thickness of the second layer 40. The thickness of the first intermediate layer 51 may be, for example, 5 nm or more, 50 nm or more, or 75 nm or more. The thickness of the first intermediate layer 51 may be, for example, 5 μm or less, 1 μm or less, or 150 nm or less. The higher the resistance of the first intermediate layer 51 to the etchant for the first layer 30, the smaller the thickness of the first intermediate layer 51 can be. It is particularly preferable that the thickness of the first intermediate layer 51 be 1 μm or less.

[0085] The intermediate layer 50 may include a layer that serves to bond the first layer 30 and the second layer 40. For example, the first intermediate layer 51 may be a bonding layer containing an adhesive. The thickness of the bonding layer is, for example, 0.1 μm or more, but may also be 0.2 μm or more, or 0.5 μm or more. The thickness of the bonding layer is, for example, 3 μm or less, but may also be 2 μm or less, or 1 μm or less.

[0086] Preferably, the intermediate layer 50 is positioned so as not to overlap the second aperture 41 in a plan view. This suppresses the occurrence of shadows caused by the intermediate layer 50.

[0087] The first intermediate layer 51 may include alignment marks. The alignment marks of the first intermediate layer 51 may be formed separately from the alignment marks of the first layer 30 or the second layer 40, or may be formed in place of the alignment marks of the first layer 30 or the second layer 40.

[0088] The thickness of each layer, the dimensions of each component, and the spacing can be measured by observing a cross-sectional image of the mask 20 using a scanning electron microscope.

[0089] Next, the press device 10 will be described. Figure 8 shows an example of the press device 10. The press device 10 includes a first press member 71 and a first moving mechanism 74. The first moving mechanism 74 includes, for example, an arm that supports the first press member 71 from below. The first moving mechanism 74 moves the first press member 71 in a first moving direction F1 toward the mask 20. The first moving direction F1 may be the normal direction D3 of the first surface 301 of the mask. By moving the first press member 71 with the first moving mechanism 74, the first press member 71 can press the mask 20 toward the substrate 110.

[0090] Figure 9 is a cross-sectional view showing the first press member 71 in contact with the mask 20. The first press member 71 includes a first reference surface 721 and a first press layer 73 protruding from the first reference surface 721 toward the mask 20. For example, the first press member 71 includes a first support substrate 72 including the first reference surface 721. The first reference surface 721 faces the first surface 301 of the mask. The first press layer 73 overlaps the first opening 31 in a plan view. The first press layer 73 does not have to overlap the first surface 301 of the mask in a plan view. The first moving mechanism 74 moves the first press member 71 in a first moving direction F1 such that the first press layer 73 enters the first opening 31 and presses the second layer 40.

[0091] The first support substrate 72 supports the first press layer 73 from below in the first movement direction F1. The material of the first support substrate 72 may be a rigid material. For example, the first support substrate 72 may contain silicon, quartz glass, metal, etc. This suppresses bending of the first support substrate 72 due to gravity. As a result, the position of the first press layer 73 in the first movement direction F1 can be precisely adjusted. This allows for precise adjustment of the amount that the first press layer 73 presses against the mask 20.

[0092] The thickness T4 of the first support substrate 72 is, for example, 50 μm or more, may be 100 μm or more, or 200 μm or more. The thickness T4 is, for example, 1000 μm or less, may be 800 μm or less, or 600 μm or less.

[0093] The first press layer 73 includes a press surface 731 that presses the second layer 40. As shown in Figure 9, the press surface 731 may be in contact with the second layer 40. Although not shown, the press surface 731 may press the second layer 40 through other layers. For example, if an intermediate layer 50 is located on the third mask surface 401 of the second layer 40, the press surface 731 may be in contact with the intermediate layer 50. By bringing the press surface 731 into contact with the intermediate layer 50 and pressing the intermediate layer 50 upward, the second layer 40 is pressed upward.

[0094] The first press layer 73 may contain a resin material. This helps to prevent damage to the mask 20 caused by contact with the first press layer 73. For example, it helps to prevent damage to the second layer 40.

[0095] The resin material for the first press layer 73 is polyethylene, polypropylene, polystyrene, acrylonitrile-butadiene-styrene (ABS), polyvinyl chloride (PVC), polymethyl methacrylate (PMMA), polyethylene terephthalate, polyurethane, polyimide, polyamide, phenol (PF), urea resin (UF), melamine (MF), epoxy, casein, polyether ether ketone (PEEK), liquid crystal polymer (LCP), polydimethylsiloxane (PDMS), etc. The first press layer 73 may consist of a single resin layer or may contain multiple resin layers.

[0096] The first press layer 73 may contain particles. The particles may be visible on the press surface 731. The inclusion of particles in the first press layer 73 makes it easier to separate the first press layer 73 from the mask 20 after it has pressed the mask 20. The particles in the first press layer 73 may include, for example, inorganic materials such as carbon black or silica. The particles may also be magnetic particles made of a magnetic material. The particles 46 may also be gold nanoparticles made of fine gold particles.

[0097] If the first press layer 73 contains magnetic particles, the gap between the substrate 110 and the mask 20 may be reduced by utilizing magnetic force. For example, a magnetic member may be placed on the second surface 112 side of the substrate 110. For example, a plate may be placed on the second surface 112 and a magnet placed on the plate. As shown in Figure 9, when the first press layer 73 is located at the first opening 31, the first press layer 73 is attracted by magnetic force toward the substrate 110. Alternatively, a magnetic member located on the second surface 112 side of the substrate 110 is attracted by magnetic force toward the mask 20. This reduces the gap between the substrate 110 and the mask 20.

[0098] A release layer may be formed on the press surface 731 of the first press layer 73. The release layer contains a release agent. Forming a release layer makes it easier to separate the first press layer 73 from the mask 20.

[0099] The thickness T5 of the first press layer 73 may be greater than the thickness T1 of the first layer 30. This prevents the first reference surface 721 from contacting the first layer 30 when the press surface 731 is pressing the second layer 40. In other words, a gap can be formed between the first layer 30 and the first reference surface 721 when the press surface 731 is pressing the second layer 40. This prevents damage such as cracking from occurring in the first layer 30. The dimension S9 of the gap is, for example, 50 μm or more, may be 100 μm or more, or 200 μm or more or less.

[0100] On the other hand, if the dimension S9 of the gap between the first layer 30 and the first reference surface 721 is too large, the aspect ratio of the first press layer 73 will increase, and the shape of the first press layer 73 may become unstable. Taking this into consideration, dimension S9 may be smaller than the thickness T1 of the first layer 30. For example, dimension S9 may be 0.9 times or less of the thickness T1, 0.7 times or less of the thickness T1, or 0.5 times or less of the thickness T1. The aspect ratio of the first press layer 73 is the ratio of the thickness T5 to dimension T6. Dimension T6 is the minimum dimension of the first press layer 73 in the plane direction of the first reference surface 721.

[0101] As shown in Figure 9, the dimension T6 of the first press layer 73 may be determined such that a gap is formed between the first wall surface 32 of the first opening 31 and the first press layer 73 when the press surface 731 is pressing the second layer 40. The dimension S10 of the gap between the first wall surface 32 and the first press layer 73 may be, for example, 0.1 mm or more, 0.2 mm or more, or 0.3 mm or more. The dimension S10 may be, for example, 2.0 mm or less, 1.0 mm or less, or 0.8 mm or less. The dimension S10 may be measured at the position of the first surface 301 of the mask.

[0102] Figure 10 is a plan view of the mask 20 with the contour of the press surface 731 added when the mask 20 is pressed. Figure 10 can show the positional relationship between the press surface 731 and the first opening 31. The area SA2 of the press surface 731 entering one first opening 31 is smaller than the area SA1 in a plan view of one first opening 31. In order to bring the second layer 40 located in one first opening 31 into overall contact with the substrate 110, it is preferable that the ratio of area SA2 to area SA1 is above a certain value. The ratio of area SA2 to area SA1 is, for example, 0.70 or more, may be 0.75 or more, or may be 0.80 or more. On the other hand, if the ratio of area SA2 to area SA1 is too high, the gap dimension S10 becomes small, and the difficulty of aligning the first press layer 73 with respect to the first opening 31 increases. Taking this into consideration, the ratio of area SA2 to area SA1 is, for example, 0.95 or less, may be 0.92 or less, or 0.90 or less.

[0103] If the second layer 40 has high adhesion to the substrate 110, the ratio of area SA2 to area SA1 may be smaller than the value described above. For example, if the second layer 40 contains resin material but does not contain particles 46, when a part of the second layer 40 comes into contact with the substrate 110, the other parts of the second layer 40 may also be spontaneously attracted to the substrate 110. In this case, the ratio of area SA2 to area SA1 may be, for example, 0.10 or more and 0.50 or less.

[0104] As shown in Figure 10, the first press member 71 may be configured such that the first press layer 73 presses against the second layer 40 in all of the first openings 31. Although not shown, there may be first openings 31 into which the first press layer 73 does not enter. For example, the first press layer 73 does not need to enter a first opening 31 located in a position where deflection of the second layer 40 is unlikely to occur.

[0105] (Method for manufacturing vapor-deposited masks) Next, the method for manufacturing a vapor deposition mask according to this embodiment will be described with reference to Figures 11 to 16. First, a first layer 30 is prepared. A silicon wafer may be used as the first layer 30. The first mask surface 301 and the second mask surface 302 of the first layer 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first mask surface 301 and the second mask surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientations of the first mask surface 301 and the second mask surface 302 may be (100) and (110), etc.

[0106] Next, as shown in Figure 11, an intermediate layer 50 is formed on the second surface 302 of the mask of the first layer 30. The intermediate layer 50 includes, for example, the first intermediate layer 51. The intermediate layer 50 may be formed over the entire second surface 302 of the mask. The intermediate layer 50 may be formed by, for example, a vacuum deposition method such as sputtering.

[0107] Next, as shown in Figure 12, a second layer 40 is formed on the intermediate layer 50. This makes it possible to obtain a laminate 22 comprising a first layer 30, an intermediate layer 50, and a second layer 40. The second layer 40 may be formed over the entire intermediate layer 50. The second layer 40 may be formed by a coating method such as spin coating.

[0108] After coating the intermediate layer 50 with the material for the second layer 40, a heating step may be performed to heat the second layer 40. This allows the second layer 40 to solidify. For example, by coating the intermediate layer 50 with polyamic acid, a precursor of polyimide, and then performing the heating step, an imidation reaction can be induced. This allows the second layer 40 containing polyimide to be formed. The temperature of the heating step may be, for example, 200°C or higher, and may be 300°C or higher. The temperature of the heating step may be, for example, 500°C or lower, and may be 400°C or lower. The duration of the heating step may be, for example, 10 minutes or more, and may be 20 minutes or more. The duration of the heating step may be, for example, 200 minutes or less, and may be 100 minutes or less.

[0109] Although not shown in the diagram, a pressing step may be performed to press the second layer 40. For example, the surface of a substrate such as a silicon wafer or glass wafer, separate from the first layer 30, may be pressed against the second layer 40. If the surface of the substrate is flatter than the fourth surface 402 of the mask of the second layer 40, the pressing step can improve the flatness of the fourth surface 402 of the mask. The surface of the substrate may include an uneven pattern. In this case, the pressing step can impart an uneven pattern to the fourth surface 402 of the mask. The pressing step may be performed before the step of heating the second layer 40.

[0110] Although not shown in the figures, the laminate 22 may include a protective layer located on the fourth surface 402 of the mask of the second layer 40. The protective layer may, for example, contain the same material as the first intermediate layer 51. By forming a protective layer on the fourth surface 402 of the mask, etching of the fourth surface 402 of the mask can be suppressed in the first processing step described later. The protective layer may be removed at the same time as the first intermediate layer 51.

[0111] Next, as shown in Figure 13, a resist formation process is carried out to partially form a resist layer 38 on the first surface 301 of the mask of the first layer 30. A resist opening 381 is formed in the resist layer 38, facing the first opening 31.

[0112] The resist layer 38 may be a photoresist. In this case, first, a liquid resist material is coated onto the first surface 301 of the mask to form the resist layer 38 on the first surface 301 of the mask. After coating, a step of heating the resist layer 38 may be performed. Subsequently, a photolithography process is performed to expose and develop the resist layer 38. This allows resist openings 381 to be formed in the resist layer 38.

[0113] Although not shown in the diagram, the resist layer 38 may be a silicon oxide film partially formed on the first surface 301 of the mask. The silicon oxide film is formed, for example, by partially performing a thermal oxidation treatment on the first surface 301 of the mask. The silicon oxide film may be formed on the first layer 30 before the intermediate layer 50 and the second layer 40 are laminated onto the first layer 30.

[0114] Next, as shown in Figure 14, a first processing step is performed to form a first opening 31 in the first layer 30 by etching the first layer 30 from the mask first surface 301 side. The etching in the first processing step may be dry etching using an etching gas. The etching gas is an example of the etchant described above. Since the intermediate layer 50 has resistance to the etchant, etching can be prevented from progressing to the second layer 40, as shown in Figure 14.

[0115] Next, a resist removal step may be performed to remove the resist layer 38. For example, a resist treatment solution is supplied to the first surface 301 of the mask. If the resist layer 38 is a photoresist, the resist treatment solution contains, for example, N-methyl-2-pyrrolidone. The resist layer 38 may also be removed by irradiating it with oxygen plasma. If the resist layer 38 is a silicon oxide film, the resist treatment solution contains, for example, hydrofluoric acid. The resist layer 38 may also be removed by dry etching using CF4 gas or the like.

[0116] After the first processing step, an intermediate layer removal step may be performed to remove the intermediate layer 50. For example, an etchant for the intermediate layer 50 is supplied to the first opening 31. This makes it possible to remove the intermediate layer 50 that overlaps the first opening 31 in a plan view, as shown in Figure 15. The etching of the intermediate layer 50 may be dry etching using a fluorine-based gas or the like, or wet etching using an acidic etching solution. The order of the resist removal step and the intermediate layer removal step is not particularly limited. The resist removal step and the intermediate layer removal step may be performed simultaneously.

[0117] Next, a second processing step is performed to form multiple second apertures 41 in the second layer 40. For example, as shown in Figure 16, the second layer 40 is irradiated with a laser L from the mask third surface 401 side. This allows the second apertures 41 to be formed in the second layer 40. As the laser L, a KrF excimer laser with a wavelength of 248 nm, a YAG laser with a wavelength of 355 nm, etc., can be used.

[0118] The second processing step may be carried out with a protective film or protective coating formed on the fourth surface 402 of the mask of the second layer 40. The protective film is a component that is attached to the fourth surface 402 of the mask. The protective film includes, for example, a resin film and an adhesive layer. The protective film is attached to the fourth surface 402 of the mask such that the adhesive layer is in contact with the fourth surface 402 of the mask. The adhesive layer may be an adhesive layer or an adsorbent layer. The protective film is formed by applying a resin-containing liquid onto the fourth surface 402 of the mask. Application methods include, for example, bar coating, spin coating, and spray coating. The protective film or protective layer may be removed after the second processing step is completed. Preferably, the reactivity of the protective film or protective film to the laser is lower than that of the second layer 40 to the laser. Reactivity refers to the speed at which the protective film or protective film or the second layer 40 is processed by the laser.

[0119] In the second processing step, first, the laminate 22 is placed on the stage so that the fourth surface 402 of the mask faces the stage surface. Next, the position of the irradiation head relative to the laminate 22 is adjusted. In the position adjustment step, either the irradiation head or the stage may be moved. By repeatedly irradiating with the laser and adjusting the position, a plurality of second apertures 41 can be formed in the second layer 40. In this way, the mask 20 shown in Figure 6A can be obtained.

[0120] Alternatively, a laser mask corresponding to multiple patterns of second apertures 41 may be used. In this case, a focusing lens may be placed between the laser mask and the second layer 40. Multiple second apertures 41 can be formed by a laser processing method using a reduction projection optical system.

[0121] Although not shown in the figures, the second aperture 41 may be formed in the second layer 40 by means other than a laser. For example, the second aperture 41 may be formed in the second layer 40 by photolithography. In this case, the second layer 40 includes a photosensitive resin material.

[0122] Next, we will describe an example of a method for manufacturing the organic device 100.

[0123] First, a substrate 110 on which the first electrode 120 is formed is prepared. The substrate 110 may be a silicon wafer. The first electrode 120 may be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum deposition method, and then patterning the conductive layer by a photolithography method. The patterning of the conductive layer may be performed using equipment that performs semiconductor manufacturing processes. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

[0124] Next, an organic layer 130, including a first organic layer 130A and a second organic layer 130B, is formed on the first electrode 120. For example, first, the first organic layer 130A is formed by a deposition method using a deposition system 1 including a first mask 20. The first mask 20 has a second opening 41 corresponding to the first organic layer 130A. Next, the second organic layer 130B is formed by a deposition method using a deposition system 1 including a second mask 20. The second mask 20 has a second opening 41 corresponding to the second organic layer 130B. Next, a third organic layer is formed by a deposition method using a deposition system 1 including a third mask 20. The third mask 20 has a second opening 41 corresponding to the third organic layer.

[0125] An example of a vapor deposition method using vapor deposition system 1 will be described with reference to Figures 17 to 20.

[0126] As shown in Figure 17, the mask 20 is placed in the first chamber 11 of the press device 10. The mask 20 is held by, for example, a mask holder 5A. Next, the substrate 110 and the mask 20 are combined so that the first surface 111 of the substrate 110 faces the exit surface 202 of the mask 20. Figure 18 is a cross-sectional view showing the combined mask 20 and substrate 110. The substrate 110 may be held by a substrate holder 5B. By moving the substrate holder 5B toward the mask 20, the first surface 111 can be brought into contact with the exit surface 202. The deposition system 1 may include a supporter 5D that supports the mask 20 and substrate 110 from below in the press device 10.

[0127] The effective area 44 of the second layer 40 does not overlap with the first layer 30. When the mask 20 is held so that the second layer 40 expands horizontally, the effective area 44 of the second layer 40 may bend downward due to gravity, as shown in Figure 18. If the bending of the second layer 40 is greater than the bending of the substrate 110, a gap will be created between the substrate 110 and the mask 20. The larger the gap, the lower the accuracy of the position and shape of the deposited layer formed on the substrate 110 by deposition.

[0128] A pressing process is performed to reduce the gap. As shown in Figures 17 and 18, the first pressing member 71 is positioned so that its first reference surface 721 faces the incident surface 201. The first pressing layer 73 of the first pressing member 71 overlaps the first opening 31 in a plan view. The pressing process uses the first pressing member 71 to push the mask 20 toward the substrate 110. For example, in a first movement direction F1, the first moving mechanism 74 moves the first pressing member 71. This allows the first pressing layer 73 to enter the first opening 31 and press the second layer 40. As a result, the second layer 40 is displaced toward the substrate 110 in the first movement direction F1, thus reducing the gap between the substrate 110 and the mask 20.

[0129] The displacement of the second layer 40 in the first movement direction F1 is maximum at the position where the second layer 40 is most deflected. The position where the second layer 40 is most deflected is, for example, the center of the effective area 44 in a plan view. The maximum value of the displacement of the second layer 40 in the first movement direction F1 is, for example, 2 μm or more, may be 5 μm or more, or 8 μm or more. The maximum value of the displacement of the second layer 40 in the first movement direction F1 is, for example, 20 μm or less, may be 15 μm or less, or 12 μm or less.

[0130] The movement of the first press member 71 in the first movement direction F1 may be stopped when the fourth mask surface 402 of the effective area of ​​the second layer 40 comes into contact with the first surface 111 of the substrate 110. The timing of stopping may be determined, for example, based on information from a load sensor provided in the first movement mechanism 74. The measured value of the load sensor changes at the timing when the first press member 71 comes into contact with the second layer 40, and at the timing when the second layer 40, pressed by the first press member 71, comes into contact with the substrate 110. The timing of stopping can be determined based on the timing of the changes in the measured value of the load sensor.

[0131] Next, the first press member 71 is separated from the mask 20. For example, as shown in Figure 19, the first moving mechanism 74 moves in the first moving direction F1 in a direction that separates the first press member 71 from the mask 20.

[0132] Next, as shown in Figure 19, the shutter 3 is opened. Then, as shown in Figures 19 and 20, the mask 20 and substrate 110 are transported from the first chamber 11 of the press device 10 to the second chamber 16 of the deposition device 15. For example, as shown in Figure 19, the transport mechanism 17 moves in the second movement direction F2 from the second chamber 16 toward the first chamber 11. Next, the transport mechanism 17 is raised. This lifts the mask 20 and substrate 110 from the supporter 5D. Next, as shown in Figure 20, with the mask 20 and substrate 110 placed on the transport mechanism 17, the transport mechanism 17 moves in the second movement direction F2 from the first chamber 11 toward the second chamber 16. The mask 20 and substrate 110 may be transported from the first chamber 11 toward the second chamber 16 while being held by the mask holder 5A and the substrate holder 5B. Next, the transport mechanism 17 is lowered. As a result, the mask 20 and the substrate 110 are placed on the supporter 5C located in the second chamber 16.

[0133] After the mask 20 and substrate 110 are transported to the second chamber 16, the shutter 3 is closed as shown in Figure 20. The transport mechanism 17 is then moved to a position where it does not overlap with the mask 20 in the normal direction D3 of the first surface 301 of the mask. Next, the deposition material 7 is heated using the heater 8. The evaporated deposition material 7 adheres to the substrate 110 through the second opening 41 of the mask 20. As a result, a deposition layer such as the organic layer 130 is formed on the substrate 110.

[0134] Next, a second electrode 140 is formed on the organic layer 130. For example, as shown in Figure 1, the second electrode 140 may be formed over the entire first surface 111 by a vacuum deposition method. Alternatively, although not shown, the second electrode 140 may be formed by a deposition method using a mask 20, similar to the organic layer 130. After that, a sealing layer or the like (not shown) may be formed on the second electrode 140. In this way, the organic device 100 can be obtained.

[0135] Multiple organic devices 100 may be formed on a single substrate 110. Each organic device 100 may correspond to one of the first openings 31 of the mask 20. In this case, a cutting process of the substrate 110 may be performed. For example, the substrate 110 may be cut along a region of the substrate 110 that corresponds to the inner region 36 of the mask 20. This makes it possible to obtain multiple organic devices 100.

[0136] The effects of the mask 20 when forming the organic layer 130, the second electrode 140, etc. by a vapor deposition method using the mask 20 will be explained.

[0137] The mask 20 includes a first layer 30 containing silicon or a silicon compound. Therefore, when the substrate 110 contains silicon, it is possible to suppress the difference between the thermal expansion occurring in the substrate 110 and the thermal expansion occurring in the mask 20. This prevents a decrease in the accuracy of the position and shape of deposited layers such as the organic layer 130 and the second electrode 140 due to the thermal expansion of the mask 20. Thus, an organic device 100 with a high element density can be provided.

[0138] The mask 20 comprises a second layer 40 including a plurality of second openings 41. The second layer 40 contains a resin material. By providing the second layer 40 separately from the first layer 30, the thickness of the second layer 40 can be reduced, thereby suppressing the occurrence of shadows during the deposition process. Furthermore, by appropriately securing the distance S6 between the first wall surface 32 and the second openings 41 in a plan view, the thickness of the first layer 30 can be appropriately secured while suppressing shadows. This prevents damage to the first layer 30 when handling the mask 20, for example, when moving the mask. Also, since the second layer 40 contains a resin material, the second layer 40 is likely to come into contact with the substrate 110 or components on the substrate 110. Possible reasons for this include (A) and (B) below. (A) The occurrence of van der Waals forces. (B) Because the resin material is flexible, the second layer 40 is easily deformed according to the shape of the components on the substrate 110. Because the second layer 40 is more likely to come into contact with the substrate 110 or the components on the substrate 110, it is possible to suppress the formation of gaps between the second layer 40 and the substrate 110 or the components on the substrate 110. This also contributes to the suppression of shadows. In the deposition process, preferably the second layer 40 is in contact with the substrate 110 or the components on the substrate 110. If a protective film is formed on the fourth surface 402 of the mask, in the deposition process, preferably the protective film is in contact with the substrate 110 or the components on the substrate 110. The thickness of the protective film is preferably 1.0 μm or less, but may be 0.8 μm or less, or 0.6 μm or less.

[0139] Prior to the deposition process, a pressing process is performed in which the mask 20 is pressed toward the substrate 110 using the first pressing mechanism 70. This suppresses the formation of gaps between the second layer 40 and the substrate 110 or components on the substrate 110 due to the deflection of the effective area 44 of the second layer 40. This also contributes to the suppression of shadows.

[0140] If the first layer 30 contains silicon or a silicon compound, pressing the mask 20 and deforming it as a whole may cause cracks or other damage to the first layer 30. The pressing process described above presses the second layer 40 located at the first opening 31 toward the substrate 110. Therefore, it is possible to suppress damage to the first layer 30 while suppressing the formation of gaps between the second layer 40 and the substrate 110 or components on the substrate 110.

[0141] The peripheral region 43 of the second layer 40 of the mask 20 is fixed to the second surface 302 of the mask of the first layer 30. Therefore, bending of the effective region 44 of the second layer 40 can be suppressed.

[0142] Since the second layer 40 containing resin material is bonded to the first layer 30 via an intermediate layer 50, even if the first layer 30 is damaged, the scattering of fragments of the first layer 30 can be suppressed.

[0143] The above-described embodiment can be modified in various ways. Other forms will be described below, with reference to the drawings as necessary. In the following description and the drawings used therein, parts that can be configured similarly to the above-described embodiment will be given the same reference numerals as those used for the corresponding parts in the above-described embodiment. Duplication of explanation will be omitted. Furthermore, if it is clear that the effects and advantages obtained in the above-described embodiment can also be obtained in other forms, the explanation may be omitted.

[0144] (Second Embodiment) A second embodiment will be described with reference to Figures 21 to 24.

[0145] Figure 21 shows an example of the vapor deposition system 1. The press device 10 may include a second press mechanism 75. The second press mechanism 75 pushes the substrate 110 toward the mask 20. By using the second press mechanism 75, the formation of a gap between the mask 20 and the substrate 110 can be further suppressed.

[0146] The second press mechanism 75 includes a second press member 76. The second press member 76 includes a second press layer 78 facing the substrate 110. The second press member 76 may also include a second support substrate 77 that supports the second press layer 78. Although not shown, the second press mechanism 75 may also include a second moving mechanism that moves the second press member 76 in a first moving direction F1 toward the substrate 110.

[0147] Figure 22 is a cross-sectional view showing the second press mechanism 75 in contact with the substrate 110. The second press layer 78 may extend so as to overlap the second mask surface 302 and the first opening 31 in a plan view. The second press layer 78 may extend so as to overlap multiple first openings 31 in a plan view.

[0148] The second support substrate 77 supports the second press layer 78 from above in the first movement direction F1. The material of the second support substrate 77 may be a rigid material. For example, the second support substrate 77 may contain silicon, quartz glass, metal, etc. This suppresses bending of the second support substrate 77 due to gravity. As a result, the position of the second press layer 78 in the first movement direction F1 can be precisely adjusted. This allows for precise adjustment of the amount that the second press layer 78 presses against the substrate 110.

[0149] The second press layer 78 may contain a resin material. This helps to prevent damage to the substrate 110 or components on the substrate 110 due to contact with the second press layer 78. As the resin material for the second press layer 78, the same material as the resin material for the first press layer 73 can be used.

[0150] An example of a vapor deposition method using vapor deposition system 1 will be explained with reference to Figures 21 to 24.

[0151] Similar to the first embodiment, the substrate 110 and the mask 20 are combined in the first chamber 11. Subsequently, a pressing process is performed. As shown in Figures 21 and 22, the pressing process includes a step in which a first pressing member 71 pushes the mask 20 toward the substrate 110, and a step in which a second pressing member 76 pushes the substrate 110 toward the mask 20.

[0152] Next, the first press member 71 is separated from the mask 20. For example, as shown in Figure 23, the first moving mechanism 74 moves in the first moving direction F1 in a direction that separates the first press member 71 from the mask 20. The second press member 76 does not need to be separated from the substrate 110.

[0153] Next, as shown in Figure 24, the shutter 3 is opened. Then, as shown in Figures 23 and 24, the mask 20 and substrate 110 are transported from the first chamber 11 of the press device 10 to the second chamber 16 of the deposition device 15. For example, with the mask 20 and substrate 110 placed on the transport mechanism 17, the transport mechanism 17 moves in the second movement direction F2 from the first chamber 11 to the second chamber 16. The second press member 76 may be transported to the second chamber 16 in combination with the substrate 110. Although not shown, the second press member 76 may be separated from the substrate 110 in the first chamber 11.

[0154] After the mask 20 and substrate 110 are transported to the second chamber 16, the shutter 3 is closed as shown in Figure 24. The transport mechanism 17 is then moved to a position where it does not overlap with the mask 20 in the normal direction D3 of the first surface 301 of the mask. Next, the deposition material 7 is heated using the heater 8. The evaporated deposition material 7 adheres to the substrate 110 through the second opening 41 of the mask 20. As a result, a deposition layer such as the organic layer 130 is formed on the substrate 110.

[0155] (Third embodiment) Figure 25 is a cross-sectional view showing an example of a second press mechanism 75 according to a third embodiment. As shown in Figure 25, the second press mechanism 75 may include a second reference surface 771 facing the first surface 111 of the substrate 110. The second press layer 78 may protrude from the second reference surface 771 toward the substrate 110. The second press layer 78 may overlap the first opening 31 in a plan view. This allows selective pressing of the area of ​​the substrate 110 that overlaps the first opening 31. Therefore, the gap between the second layer 40 and the substrate 110 can be efficiently reduced. The second press layer 78 may or may not overlap the fourth mask surface 402 of the second layer 40 in a plan view.

[0156] (Fourth embodiment) Figure 26 is a cross-sectional view showing an example of a second press mechanism 75 according to the fourth embodiment. As shown in Figure 26, the second press layer 78 may protrude from the second reference surface 771 toward the substrate 110. The second press layer 78 may overlap the second mask surface 302 of the first layer 30 in a plan view. The second press layer 78 does not have to overlap the first opening 31 in a plan view. According to this embodiment, the volume of the second press layer 78 can be reduced compared to the second embodiment. Therefore, the cost of the second press member 76 can be reduced.

[0157] (Fifth embodiment) Figure 27 is a cross-sectional view showing an example of the first press mechanism 70 according to the fifth embodiment. As shown in Figure 27, the first press layer 73 may include grooves 732 located on the press surface 731. This reduces the area of ​​the press surface 731 in contact with the mask 20. As a result, the first press layer 73 is easier to separate from the mask 20 after the pressing process.

[0158] The groove 732 may extend in two different directions. For example, the groove 732 may include a first groove extending in a first direction and a second groove extending in a second direction so as to intersect the first groove. The press surface 731 may be divided into multiple regions by the groove 732. For example, the press surface 731 may be divided into four regions by the groove 732.

[0159] (Sixth Embodiment) Figure 28 is a cross-sectional view showing an example of a first press mechanism 70 according to the sixth embodiment. As shown in Figure 28, the first press member 71 may include a plurality of first press layers 73 that overlap one first opening 31. This reduces the area of ​​the press surface 731 in contact with the mask 20. As a result, the first press layers 73 are easier to separate from the mask 20 after the pressing process.

[0160] The number of first press layers 73 overlapping a single first opening 31 in a plan view is arbitrary. Multiple first press layers 73 may be arranged in each of the first and second directions. The number of first press layers 73 arranged in the first direction and the number of first press layers 73 arranged in the second direction may be the same or different.

[0161] (Seventh Embodiment) Figure 29 is a cross-sectional view showing an example of the first press mechanism 70 according to the seventh embodiment. As shown in Figure 29, the press surface 731 may be curved so as to be convex toward the second layer 40. This can prevent damage to the mask 20 due to contact with the first press layer 73.

[0162] (Eighth embodiment) Figure 30 is a cross-sectional view showing an example of a first press mechanism 70 according to the eighth embodiment. As shown in Figure 30, the press surface 731 may include a first press surface 731a and a second press surface 731b located closer to the first reference surface 721 relative to the first press surface. For example, the first press member 71 may include a first press layer 73 having a thickness T41 and including the first press surface 731a, and a first press layer 73 having a thickness T42 greater than the thickness T41 and including the second press surface 731b. The second press surface 731b may be located inside the first press surface 731a in a plan view. "Inside" means the side closer to the center point of the first opening 31 in a plan view.

[0163] As shown in Figure 30, the region of the substrate 110 that overlaps the first opening 31 may bend downward. When the substrate 110 bends, the second layer 40 that overlaps the first opening 31 also bends downward in the same way. The amount of bending of the second layer 40 increases towards the inside. According to this embodiment, when the substrate 110 is bent, it is possible to suppress the occurrence of positional differences in the force that the first press layer 73 exerts on the second layer 40.

[0164] The difference between the position of the first press surface 731a and the position of the second press surface 731b in the first movement direction F1 is, for example, 0.1 μm or more, may be 0.2 μm or more, or may be 0.5 μm or more. The difference between the position of the first press surface 731a and the position of the second press surface 731b in the first movement direction F1 is, for example, 2.0 μm or less, may be 1.5 μm or less, or may be 1.0 μm or less.

[0165] (Ninth Embodiment) Figure 31 is a cross-sectional view showing an example of the first press mechanism 70 according to the ninth embodiment. The first press layer 73 may be configured such that its cross-sectional area decreases as it approaches the mask 20. For example, the first press layer 73 may have a pyramidal structure, as shown in Figure 31. The cross-sectional area is the area obtained when the first press layer 73 is cut by a plane parallel to the first surface 301 of the mask.

[0166] (Tenth embodiment) In the above-described embodiment, an example was shown in which the pressing process was carried out in the first chamber 11 and the deposition process was carried out in the second chamber 16. In this embodiment, an example is described in which the pressing process and the deposition process are carried out in the same chamber.

[0167] Figure 32 shows an example of a vapor deposition system 1. The vapor deposition system 1 comprises a chamber 9, a vapor deposition source 6 located in the chamber 9, and a first press mechanism 70 located in the chamber 9.

[0168] An example of a deposition method using deposition system 1 will be described with reference to Figures 32 to 35.

[0169] The substrate 110 and the mask 20 are combined in the chamber 9. Subsequently, a pressing process is performed in the chamber 9. The pressing process includes a first moving step in which the first pressing member 71 is moved so that it faces the incident surface 201 of the mask 20, as shown in Figure 33. For example, the first moving mechanism 74 that holds the first pressing member 71 is moved in the second moving direction F2.

[0170] Next, the pressing process performs a second moving step in which the first pressing member 71 pushes the mask 20 toward the substrate 110. For example, as shown in Figure 34, the first moving mechanism 74 that holds the first pressing member 71 is moved toward the mask 20 in the first moving direction F1.

[0171] Next, a third moving step is performed to separate the first press member 71 from the mask 20. For example, the first moving mechanism 74 moves in the first moving direction F1 in a direction that separates the first press member 71 from the mask 20. Subsequently, as shown in Figure 35, a fourth moving step is performed to move the first press member 71 to a position that does not overlap with the mask 20 in the direction normal to the first surface 301 of the mask. Next, the vapor deposition material 7 is heated using the heater 8. The evaporated vapor deposition material 7 adheres to the substrate 110 through the second opening 41 of the mask 20. As a result, a vapor deposition layer such as the organic layer 130 is formed on the substrate 110.

[0172] The direction of movement of the first press member 71 in the second and fourth movement steps is arbitrary. For example, the movement of the first press member 71 may be linear or rotational. Rotational movement can be achieved, for example, by rotating the rotating shaft to which the first movement mechanism 74 is connected.

[0173] (Embodiment 11) In the above-described embodiment, an example was shown in which one first aperture 31 overlaps with one effective region 44 in a plan view. In this embodiment, an example is described in which one first aperture 31 overlaps with two or more effective regions 44.

[0174] For example, as shown in Figure 36 or Figure 37, the first layer 30 may include one first opening 31, and one first opening 31 may overlap two or more effective areas 44. The first opening 31 may have a contour in plan view that includes multiple straight edges, as shown in Figure 36. The first opening 31 may have a contour in plan view that includes a curved portion, as shown in Figure 37. As shown in Figure 37, the contour of the first opening 31 may be similar in shape to the contour of the first layer 30.

[0175] For example, as shown in Figure 38 or Figure 39, the first layer 30 may include two or more first openings 31, and one first opening 31 may overlap two or more effective regions 44. As shown in Figure 38, the first opening 31 may surround two or more rows of effective regions 44 aligned in the second direction D2 in a plan view. As shown in Figure 39, the first opening 31 may surround two or more effective regions 44 aligned in the first direction D1 and two or more effective regions 44 aligned in the second direction D2 in a plan view.

[0176] According to this embodiment, the area of ​​the first layer 30 in a plan view can be reduced compared to the above-described embodiment. This may improve the adhesion of the exit surface 202 of the mask 20 to the substrate 110.

[0177] (Twelfth Embodiment) Figure 40 shows an example of an apparatus 200 equipped with an organic device 100. The apparatus 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is a layer formed by a vapor deposition method using a mask 20. The apparatus 200 is, for example, a smartphone. The apparatus 200 may also be a tablet terminal, a wearable terminal, etc. Wearable terminals include smart glasses, head-mounted displays, etc.

[0178] (13th Embodiment) In the embodiments described above, an example was shown in which the second layer 40 includes a resin material, but the second layer 40 may be composed of a material other than a resin material. For example, the second layer 40 may include inorganic compounds such as inorganic oxides and inorganic nitrides.

[0179] The first press layer 73 may also be made of a material other than resin. The second press layer 78 may also be made of a material other than resin.

[0180] The multiple components disclosed in the above embodiments can be combined as needed. Alternatively, some components may be removed from all the components shown in the above embodiments. [Explanation of Symbols]

[0181] 1. Evaporation System 2 Connections 3 Shutter 5A Mask Holder 5B PCB holder 5C Supporter 5D Supporter 6 Vapor deposition source 7. Vapor deposition materials 8 Heaters 9 Chambers 10 Pressing device 11. Chamber 1 15 Vapor deposition equipment 16. Chamber 2 17 Conveying mechanism 20 masks 201 Incidence plane 202 Ejection surface 30 1st layer 301 Mask, front side 302 Mask, side 2 303 Outer edge 31. First opening 32. First Wall 35 Outer area 36 Inner area 38 Resist Layers 39 Alignment Marks 40 2nd layer 401 Mask, 3rd side 402 Mask, 4th side 41. Second opening 50 Middle Class 70. First Press Mechanism 71 First Press Member 72 1st support board 721 1st reference plane 73 First Press Layer 731 Press surface 731a First pressing surface 731b Second Pressing Surface 732 Groove 74 1st movement mechanism 75. Second Press Mechanism 76 Second Press Member 77 Second support board 771 2nd reference plane 78 Second Press Layer 100 Organic Devices

Claims

1. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. A vapor deposition system wherein the first press layer is configured to press a portion of the second layer that includes the center of an effective region, which is a region in which a group of regularly arranged second openings is distributed.

2. The vapor deposition system according to claim 1, wherein the thickness of the first press layer is greater than the thickness of the first layer.

3. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. The first press layer includes a press surface that presses against the second layer, A vapor deposition system in which the ratio of the area of ​​the press surface to the area of ​​the first opening is 0.70 or more.

4. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. The first layer is a deposition system containing silicon.

5. The deposition system according to any one of claims 1 to 4, wherein the thickness of the first layer is 300 μm or more.

6. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. The second layer is a vapor deposition system containing a resin material.

7. The vapor deposition system according to claim 6, wherein the second layer includes particles.

8. The deposition system according to any one of claims 1 to 6, wherein the second layer is particle-free.

9. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. The first press layer is a vapor deposition system containing a resin material.

10. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. A vapor deposition system comprising a first press member containing silicon and a first support substrate constituting the first reference surface.

11. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. A vapor deposition system comprising a first press layer including a press surface for pressing the second layer and a groove located on the press surface.

12. The vapor deposition system according to any one of claims 1 to 11, wherein the first pressing mechanism includes a plurality of first pressing layers that overlap one of the first openings in a plan view.

13. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. The first press layer includes a press surface, The deposition system includes a first pressing surface for pressing the second layer and a second pressing surface located inward from the first pressing surface in a plan view and pressing the second layer at a position close to the first reference surface relative to the first pressing surface.

14. The first press layer includes a press surface that presses against the second layer, The vapor deposition system according to any one of claims 1 to 13, wherein the pressing surface is curved so as to be convex toward the second layer.

15. The vapor deposition system according to any one of claims 1 to 14, further comprising a second press mechanism for pressing the substrate toward the mask.

16. The second press mechanism includes a second press member comprising a second reference surface facing the first surface of the substrate and a second press layer protruding from the second reference surface toward the substrate in the first direction of movement. The vapor deposition system according to claim 15, wherein the second press layer overlaps the first opening in a plan view.

17. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. The deposition system includes a second press mechanism that pushes the substrate toward the mask, The second press mechanism includes a second press member comprising a second reference surface facing the first surface of the substrate and a second press layer protruding from the second reference surface toward the substrate in the first direction of movement. A vapor deposition system in which the second press layer overlaps the second surface of the mask of the first layer in a plan view.

18. A vapor deposition system for depositing a vapor deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. The first chamber in which the first press mechanism is arranged, The second chamber in which the deposition source is located, A connecting path connecting the first chamber and the second chamber, A vapor deposition system comprising a transport mechanism for transporting the substrate and the mask from the first chamber to the second chamber via the aforementioned connecting path.

19. A deposition method for depositing a deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, using a deposition system, The aforementioned vapor deposition system is A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. The first press layer is configured to press a portion of the second layer that includes the center of the effective region, which is a region in which a group of regularly arranged second openings is distributed. The aforementioned vapor deposition method is The first pressing mechanism presses the mask toward the substrate in a pressing step, A vapor deposition method comprising a vapor deposition step of depositing a vapor deposition material onto a substrate through the second opening of the mask.

20. A deposition method for depositing a deposition material onto a second surface of a substrate, which includes a first surface and a second surface located opposite to the first surface, using a deposition system, The aforementioned vapor deposition system is A mask including an exit surface facing the second surface and an incident surface located on the opposite side of the exit surface, The system includes a first press mechanism for pressing the mask toward the substrate, The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one first opening penetrating from the first mask surface to the second mask surface; The second layer includes a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of second openings that penetrate from the third mask surface to the fourth mask surface and overlap the first opening in a plan view. The first press mechanism includes a first press member including a first reference surface facing the first surface of the mask and a first press layer protruding from the first reference surface toward the mask in a first movement direction toward the first surface of the mask, and a first movement mechanism for moving the first press member in the first movement direction such that the first press layer enters the first opening and presses the second layer. The aforementioned vapor deposition method is The first pressing mechanism presses the mask toward the substrate in a pressing step, A vapor deposition step of depositing a vapor deposition material onto the substrate through the second opening of the mask, A vapor deposition method comprising, after the pressing step, a step of moving the first pressing member to a position where it does not overlap with the mask in a plan view.

Images