Hybrid architecture for quantum object confinement devices

Abstract

A confinement device is provided that includes one or more sort sections and a computation section. Each sort section includes a plurality of sort section radio frequency (RF) rails that define a plurality of sort confinement regions configured to confine quantum objects when a sort section RD voltage is applied. Each sort section RF rail has a sort thickness in a direction perpendicular to a longitudinal axis of the sort section RF rail. The computation section includes a plurality of computation section RF rails that define a plurality of computation confinement regions configured to confine quantum objects when a computation section RF voltage is applied. Each computation section RF rail has a computation thickness in a direction perpendicular to the longitudinal axis of the computation section RF rail. The computation thickness is greater than the sort thickness.

Description

Technical Field

[0001] [Related Applications] This application claims priority to U.S. Application No. 18 / 527,998, filed Dec. 4, 2023; U.S. Application No. 63 / 504,808, filed May 30, 2023; and U.S. Application No. 63 / 476,226, filed Dec. 20, 2022, the contents of which are hereby incorporated by reference in their entirety.

[0002] [Technical Field] Various embodiments relate to a quantum object confinement device having a hybrid architecture. For example, various embodiments relate to a quantum object confinement device composed of multiple sections, and a system including the quantum object confinement device. These sections are configured such that each section performs a different class of functions.

Background Art

[0003] In various scenarios, a system is configured to perform multiple functions, and different functions may have different tolerances (e.g., noise present in signals applied to various electrical components of the system), and / or different operational parameters specific to the different functions. For example, an ion trap can use an electric potential to capture multiple ions in each of one or more potential wells. Various functions can be performed to move the ions in a specific manner through multiple parts of the ion trap and / or confine them to specific parts of the ion trap. In the signals used to generate the electric potential, these various functions may have different noise tolerances. Through effort, ingenuity, and improvement, by developing solutions configured according to embodiments of the present invention, many problems of conventional systems as described above are solved, and many of them are described in detail herein.

Prior Art Documents

Patent Documents

[0004] [Patent Document 1] Specification of US Provisional Patent Application No. 63 / 379040 [Summary of the Invention] [Means for Solving the Problems]

[0005] Examples of embodiments provide a quantum object confinement device, a system including the quantum object confinement device, and a method of operating a system including a quantum object confinement device having a hybrid architecture. In various embodiments, the quantum object confinement device (also referred to herein as the confinement device) is composed of two or more sections, and each section is configured to perform a specific class of functions on the confined quantum object. For example, in various embodiments, the confinement device includes a sorting section configured to perform a sorting function and a storage function on the quantum objects confined within the sorting section. In various embodiments, the confinement device includes a quantum operation (quantum manipulation) section (also referred to herein as the operation section) configured to perform quantum operations. In various embodiments, quantum operations include quantum logic gates of one or more qubits (e.g., two qubits), entanglement operations, read and / or measurement operations, shelving / deshelving operations, resonance laser cooling operations, and / or other operations (manipulations) in which one or more quantum objects interact with an external field (e.g., magnetic field, magnetic field gradient, laser beam / pulse, microwave, etc.).

[0006] In various embodiments, the shape and arrangement of the sorting section, and / or the operation parameters are different from the shape and arrangement of the operation section, and / or the operation (manipulation) parameters. For example, the sorting confinement region of the sorting section can be configured to confine quantum objects closer to the surface of the confinement device than the operation confinement region of the operation section. For example, the noise tolerance of the sorting section may be different from the noise tolerance value of the operation section.

[0007] In various embodiments, transition zones are located between sections configured to perform different classes of functions. For example, in one embodiment, a transition zone is located between a sort section and an operation section. In various embodiments, a transition zone is an area of ​​a confinement device where the shape and arrangement of the confinement device, and / or the operation parameters of the confinement device, transition between sections connected by the transition zone. In various embodiments, the transitions between shapes and / or operation parameters within the transition zone are configured such that a quantum object traversing the transition zone from a first section to a second section (e.g., from a sort section to an operation section, or vice versa) adiabatically perceives the changes in shape and / or operation parameters.

[0008] According to one aspect of the present disclosure, a quantum object confinement device is provided. In one embodiment, the quantum object confinement device comprises one or more sort sections and an operation section. Each of the one or more sort sections comprises a plurality of sort section radio frequency (RF) rails. The plurality of sort section RF rails are configured to define a plurality of sort confinement regions configured to confine quantum objects when a sort section RF voltage is applied. Each sort section RF rail of the plurality of sort section RF rails has a sort thickness in a direction perpendicular to the longitudinal axis of the sort section RF rail. The operation section comprises a plurality of operation section RF rails. The plurality of operation section RF rails define a plurality of operation confinement regions configured to confine quantum objects when an operation RF voltage is applied. Each operation section RF rail of the plurality of operation section RF rails has an operation thickness in a direction perpendicular to the longitudinal axis of the operation section RF. The operation thickness is greater than the sort thickness.

[0009] In exemplary embodiments, a plurality of sort section RF rails comprises a plurality of parallel sort section RF rail pairs separated by a sort interval. A plurality of operation section RF rails comprises a plurality of parallel operation section RF rail pairs separated by an operation interval. The sort interval is greater than the operation interval. As an example, a sort confinement region is configured to confine quantum objects at a surface distance of a quantum object confinement device equal to the sort distance. An operation confinement region is configured to confine quantum objects at a surface distance of a quantum object confinement device equal to the operation distance. The operation distance is greater than the sort distance.

[0010] In an exemplary embodiment, the confinement device further comprises one or more transition zones, each of which is located between an operation section and each of the sort sections.

[0011] In one embodiment, the transition zone comprises a plurality of transition RF rails, and each of the plurality of transition RF rails has a thickness that varies over the length of the transition RF rail.

[0012] In one embodiment, the thickness of the transition RF rail is (a) substantially equal to the sorting thickness at the end of the transition zone adjacent to each sorting section, and (b) substantially equal to the calculation thickness at the end of the transition zone adjacent to the calculation section.

[0013] In one embodiment, the multiple transition RF rails have multiple pairs of parallel transition RF rails separated by (a) sort intervals at the ends of transition zones adjacent to each sort section and (b) calculation intervals at the ends of transition zones adjacent to calculation sections.

[0014] In one embodiment, the transition zone is configured to change the quantum object-surface distance of a quantum object confined by the confinement device between (a) the sort distance when the quantum object is at the edge of a transition zone adjacent to each sort section and (b) the operation distance when the quantum object is at the edge of a transition zone adjacent to an operation section. The change in the surface distance of the quantum object in the quantum object confinement device is adiabatic.

[0015] In one embodiment, the sort section further comprises a plurality of sort control electrodes configured to perform calculations according to a first noise tolerance, and the calculation section comprises a plurality of calculation control electrodes configured to perform calculations according to a second noise tolerance. The first noise tolerance is different from the second noise tolerance.

[0016] In one embodiment, the sort control electrode comprises a plurality of broadcast control electrodes configured to receive their respective broadcast voltage signals.

[0017] In one embodiment, the sort control electrode among the multiple sort control electrodes has a sort width, and the arithmetic control electrode among the multiple arithmetic control electrodes has an arithmetic width. The arithmetic width is larger than the sort width.

[0018] In one embodiment, the sort section is configured to perform a sorting function, and the arithmetic section is configured to perform a quantum arithmetic function.

[0019] According to another embodiment, a system is provided. In one embodiment, the system comprises a plurality of voltage sources, a plurality of operational filters, a plurality of sort filters, and a plurality of confinement devices. The confinement device comprises one or more sort sections and an operational section. Each of the one or more sort sections comprises a plurality of sort section radio frequency (RF) rails. The plurality of sort section RF rails are configured to define a plurality of sort confinement regions configured for confining quantum objects when a sort section RF voltage is applied. Each sort section RF rail of the plurality of sort section RF rails has a sort thickness in a direction perpendicular to the longitudinal axis of the sort section RF rail. The operational section comprises a plurality of operational section RF rails. The plurality of operational section RF rails are configured to define a plurality of operational confinement regions configured for confining quantum objects when an operational RF voltage is applied. Each operational section RF rail of the plurality of operational section RF rails has an operational thickness in a direction perpendicular to the longitudinal axis of the operational section RF rail. The operational thickness is greater than the sort thickness. The plurality of voltage sources are configured to generate a voltage source that is filtered by the respective filters of the operational filters or sort filters. The voltage signal filtered by the calculation filter is applied to multiple calculation section RF rails, and the voltage signal filtered by the sort filter is applied to multiple sort section RF rails.

[0020] In one embodiment, the sort filter and the arithmetic filter have different filter responses.

[0021] In one embodiment, the sort section is configured to perform a sorting function, and the arithmetic section is configured to perform a quantum arithmetic function.

[0022] In one embodiment, the system further comprises one or more operating sources and one or more beampath systems, the operating sources defining one or more quantum operation locations. The one or more beampath systems are configured to provide operating signals generated by each of the one or more operating sources to each quantum operation location.

[0023] In one embodiment, the quantum operation location includes a gate location configured to perform quantum logic operations on one or more quantum objects, and a measurement location configured to perform measurement operations on one or more quantum objects.

[0024] In one embodiment, a plurality of sort section RF rails comprises a plurality of parallel sort section RF rail pairs separated by sort intervals, and a plurality of arithmetic section RF rails comprises a plurality of parallel arithmetic section RFR rail pairs separated by arithmetic intervals. The sort interval is greater than the arithmetic interval.

[0025] In one embodiment, the sort confinement region is configured to confine the quantum object such that the surface distance of the quantum object confinement device is the sort distance, and the computation confinement region is configured to confine the quantum object such that the surface distance of the quantum object confinement device is the computation distance. The computation distance is longer than the sort distance.

[0026] In one embodiment, the confinement device further comprises one or more transition zones, each of which transition zones is located between an arithmetic section and each of the sorting sections of the sorting section.

[0027] In one embodiment, the transition zone comprises a plurality of transition RF rails, each of which has a thickness that varies over the length of the transition RF rail.

[0028] In one embodiment, the thickness of the transition RF rail is (a) substantially equal to the sort thickness at the end of the transition zone adjacent to each sort section, and (b) substantially equal to the calculation thickness at the end of the transition zone adjacent to the calculation section.

[0029] In one embodiment, the plurality of transition RF rails have a plurality of parallel transition RF rail pairs separated by (a) sort separation at the ends of transition zones adjacent to each sort section and (b) operation separation at the ends of transition zones adjacent to operation sections.

[0030] In one embodiment, the transition zone is configured to change the quantum object-confinement device surface distance of a quantum object confined by the confinement device between (a) the sort distance when the quantum object is at the edge of a transition zone adjacent to each sort section and (b) the operation distance when the quantum object is at the edge of a transition zone adjacent to an operation section. The change in the quantum object surface distance in the quantum object confinement device is adiabatic.

[0031] In one embodiment, the sort section further comprises a plurality of sort control electrodes configured to perform calculations (operations) according to a first noise tolerance, and the calculation section comprises a plurality of calculation control electrodes configured to perform calculations according to a second noise tolerance. The first noise tolerance is different from the second noise tolerance.

[0032] In one embodiment, the sort control electrode comprises a plurality of broadcast control voltages configured to receive each broadcast voltage signal.

[0033] In one embodiment, the sort control electrode among the multiple sort control electrodes has a sort width, and the arithmetic control electrode among the multiple arithmetic control electrodes has an arithmetic width. The arithmetic width is larger than the sort width.

[0034] Although the present invention has been generally described above, this specification refers to the attached drawings, which are not necessarily drawn to scale. [Brief explanation of the drawing]

[0035] [Figure 1] This is a block diagram of an example of a system equipped with a quantum object confinement device according to one embodiment. [Figure 2] This is a schematic top view of at least a part of an example of a quantum object confinement device according to one embodiment. [Figure 3] This is a schematic top view of at least a part of another example of a quantum object confinement device according to one embodiment. [Figure 4A] This is a schematic diagram of a part of the sorting section of a quantum object confinement device according to one embodiment. [Figure 4B] This is a schematic diagram of a part of the computation section of a quantum object confinement device according to one embodiment. [Figure 5A] This graph shows exemplary changes in shape and computational parameters across sections and zones of a quantum object confinement device according to one embodiment. [Figure 5B] This graph shows exemplary changes in shape and computational parameters across different sections and zones of a quantum object confinement device according to one embodiment. [Figure 5C] This graph shows exemplary changes in shape and computational parameters across yet another section and zone of a quantum object confinement device according to one embodiment. [Figure 6] This is a schematic diagram of a controller for an example of a system including a quantum object confinement device configured to confine a quantum object inside, according to an exemplary embodiment. [Figure 7] This is a schematic diagram of a computing entity in an example of a system comprising a quantum object confinement device that may be used according to an exemplary embodiment. [Modes for carrying out the invention]

[0036] The present invention will be described in more detail below with reference to the accompanying drawings, although the drawings do not show all embodiments of the present invention. In fact, the present invention can be carried out in many different forms and should not be construed as being limited to the embodiments described herein, but rather these embodiments are provided to satisfy the legal requirements to which this disclosure applies. The terms "or" (which may be written as " / ") are used below in an alternative and conjunctive sense unless otherwise specified. The terms "exemplary" and "exemplary" are used as examples that do not indicate a level of quality. The terms "generally" and "approximately" refer to applicable technical and / or manufacturing tolerances and / or within the user's measurement capabilities unless otherwise specified. Throughout this specification, common reference numerals refer to the same components.

[0037] In various scenarios, quantum objects are confined by quantum object confinement devices (also referred to herein as confinement devices). In various embodiments, quantum objects are ions, atoms, ionic, molecular, and / or multipolar molecules, quantum dots, quantum particles, groups, crystals, and / or combinations thereof (e.g., an ionic crystal containing two or more ions). In one embodiment where the quantum object is an ion and / or an ionic crystal, the confinement device is an ion trap, such as a surface ion trap or a pole ion trap. In various other embodiments, the confinement device is a device configured to confine a quantum object and comprises two or more sections configured to perform a particular class of functions.

[0038] In one embodiment, the confinement device comprises one or more sorting and storage sections (sorting sections) configured to perform a class of functions referred to herein as sorting and storage functions (also referred to herein as sorting functions). In various embodiments, the sorting and / or storage functions include sorting quantum objects. For example, quantum objects may be sorted to change the order or position of quantum objects in a string / one-dimensional array, two-dimensional array, or three-dimensional array of quantum objects. In various embodiments, the sorting and / or storage functions include maintaining quantum objects in place in a manner in which the quantum information stored by the quantum objects is preserved and / or unlikely to be destroyed. For example, quantum objects may be stored in such a manner in which an external field used to perform a quantum computation function on other quantum objects is unlikely to affect the quantum information encoded by the quantum state of the quantum object.

[0039] An exemplary confinement device further comprises a quantum operation (quantum manipulation) section (also referred to herein as the operation section) configured to perform a class of functions referred herein as operating functions. In various embodiments, a function of the class of operating functions is a function that involves causing one or more quantum objects to interact with each other and / or with an external field (e.g., a magnetic field, a magnetic field gradient, a laser beam / pulse, a microwave). For example, quantum logic gates (1-qubit gates, 2-qubit gates, etc.) and read and / or measure operations are examples of functions of the class of operating functions.

[0040] In various embodiments, sections configured to perform different classes of functions may have different shapes and / or operational parameters. For example, in various embodiments where the confinement device includes radio frequency (RF) rails and control electrodes, the thickness of the RF rails in the sorting section may be less than that of the RF rails in the operational section, and the spacing between pairs of RF rails in the sorting section may be greater than that between pairs of RF rails in the operational section. For example, in various embodiments, the potential generating elements (e.g., RF rails, control electrodes, etc.) in the sorting section of the confinement device may be configured to generate a confinement region at a first height or distance from the surface of the confinement device, and the potential generating elements (e.g., RF rails, control electrodes, etc.) in the operational section of the confinement device may be configured to generate a confinement region at a second height or distance from the surface of the confinement device. The second height or distance is greater than the first height or distance. In various embodiments, the noise tolerance of the voltage signal applied to the potential generating elements (e.g., RF rails, control electrodes, etc.) in the sorting section of the confinement device may differ from the noise tolerance of the voltage signal applied to the potential generating elements (e.g., RF rails, control electrodes, etc.) in the operational section of the confinement device.

[0041] In various embodiments, the confinement device further comprises one or more transition zones. For example, a transition zone is a part of the confinement device in which the shape and / or calculation parameters of the confinement device transition or change from the shape and / or calculation parameters of a first section of the confinement device to the shape and / or calculation parameters of a second section of the confinement device. For example, a transition zone may be provided between a sorting section and a calculation section. The shape and / or calculation parameters of the transition zone change throughout the transition zone from a shape and / or calculation parameters that match the shape and / or calculation parameters of the sorting section to a shape and / or calculation parameters that match the shape and / or calculation parameters of the calculation section. For example, in one embodiment, the thickness of the RF rail of the sorting section is smaller than the thickness of the RF rail of the calculation section, and the thickness of the RF rail of the transition zone transitions from the thickness of the RF rail of the sorting section (the end of the transition zone adjacent to and / or close to the calculation section) to the thickness of the RF rail of the calculation zone (the end of the transition zone adjacent to and / or close to the calculation section).

[0042] In various embodiments, transitions in shape and / or computation parameters occurring within a transition zone are such that the quantum information stored by the quantum object is maintained, uninterrupted, and / or disturbed as the quantum object passes through the transition zone (e.g., from a sort section to an computation section, or from an computation section to a sort section). For example, a quantum object passing through a fiber zone perceives transitions in geometric shape and computation parameters adiabatically. As those skilled in the art will understand, the passage of a quantum object through a transition zone is smooth, and / or the quantum object perceives transitions in geometric shape and / or computation parameters smoothly, if the transitions occur slowly enough that the quantum object does not perceive discontinuities in the geometric shape and / or computation parameters, and / or in the first derivatives of the geometric shape and / or computation parameters.

[0043] In various embodiments, quantum objects confined by a confinement device are used to perform experiments, controlled quantum state evolution, quantum computations, and the like. In various embodiments, quantum objects are transported between various locations defined at least partially by the confinement device and / or a system comprising the confinement device. For example, a quantum object may be transported from a storage location in a sorting section to a quantum computation location defined in an computation section of the confinement device. While the quantum object is located in the computation section, one or more quantum operations are performed on the quantum object, and then the quantum object is returned to the sorting section for storage and / or subsequent sorting.

[0044] Conventional ion traps (e.g., surface ion traps) are configured to perform both sorting and computational functions in a common area. For example, sorting and logical quantum operations can be performed at the same location in the ion trap. The drawback of this approach is that the combination of design requirements for sorting and computational functions is usually quite different. For example, in the section of the ion trap where the sorting function is performed, it may be preferable to minimize the distance between junctions in order to minimize the distance over which ions need to be transported to perform the sorting function. However, in such ion trap shapes, ions need to be confined near the surface of the ion trap, or this is implicitly required. Furthermore, high-speed sorting and transport functions require a broadband voltage source, which limits the degree of filtering that can be applied to mitigate the effects of resonance noise. In addition, sorting functions are more susceptible to various noise sources such as electrolytic noise and voltage noise than computational functions, and unique temperature requirements for the ion crystal arise.

[0045] In the region where computational functions are performed, a longer distance between the ions and the ion trap surface has the advantages of (1) reducing thermal hardening that can detrimental computational functions, and (2) reducing laser scattering from the ion trap surface that could degrade the fidelity of readouts and / or measurement operations. In the area where computational functions are performed, multiple individually controlled electrodes are typically required to compensate for imperfections in the trapping potential (or the quantum operations can be serialized). Since the smallest unit cell shape typically assumes an order of one qubit per junction, including a quantum computation compensation electrode in each unit cell can result in significant electrode and signal overhead. As mentioned above, the limitation on the distance between ions and the trap surface in the area where computational functions are performed tends to result in a larger RF electrode area. Consequently, capacitance increases, resulting in higher RF power consumption and potentially other technical challenges. Furthermore, the smallest unit cell shape means that reducing the distance between junctions to increase sorting speed also reduces the distance between quantum computation zones. This could increase technical difficulties related to finite laser beam width, laser scattering from fluorescent ions and trap surfaces, and crosstalk in quantum controlled fields such as microwave fields.

[0046] Therefore, conventional ion traps, in which sorting class functions and quantum computation class functions are performed in a common domain of the ion trap, present technical challenges.

[0047] Various embodiments offer technical solutions to these technical challenges. By separating the quantum object confinement device into sections configured to perform classification and class preservation functions and sections configured to perform quantum computation functions, several technical advantages can be obtained, many of which offset the disadvantages of the smallest unit cell shape. For example, if the quantum computation positions are not included in the sorting section, there are no constraints on using the surface distance of a smaller quantum object confinement device, and the relevant distance scale of the sorting section can be reduced because the number of electrodes required to adequately control the potential well is not so large. Since sorting functions typically require less control over the potential well than quantum computations, the confinement device can, in principle, operate with fewer independent signals and electrodes, assuming that the quantum computation positions can be shared serially.

[0048] Reducing the surface distance of the quantum object confinement device in the sort section allows for high-density storage of quantum objects, shortening sorting time and reducing the amount of RF power consumed due to the smaller footprint of the RF electrodes. If the computational functions are not performed within the sort section, higher bandwidth electronics (or looser filtering requirements) can be used to achieve high transport speeds while minimizing the complexity of the electronic drive. The high-density sort region also reduces the overall shape, which may mitigate laser scattering problems. By physically separating the quantum computation locations from the sort section and / or into computation sections with different confinement devices, a larger quantum object-confinement surface distance can be used in the computation section. A larger surface distance of the quantum object confinement device (compared to the sort section) reduces the problem of heating quantum objects during gate operations (computations) and reduces laser scattering during read and measurement operations. Furthermore, the distance between quantum computation locations can be optimized for crosstalk problems without necessarily increasing the distance scale of the sort section proportionally. By using separated quantum operation positions in succession, the ratio of qubits to quantum operation positions can be made much larger than 1, reducing the number of electrodes and signals required to operate all quantum operation positions.

[0049] Therefore, in various embodiments, this brings about technical improvements to the field of trapped atomic systems and quantum charge-coupled device (QCCD)-based quantum computing.

[0050] [An exemplary system equipped with a quantum object confinement device] Various embodiments provide (quantum object) confinement devices that include sorting and / or operating sections that are physically separated and / or distinct from one another. Such confinement devices can be incorporated into various trap atom systems, QCCD-based quantum computing systems, and the like. An example of a QCCD-based quantum computing system is shown below.

[0051] Various embodiments provide a system 100 including a quantum object confinement device 200 / 300 (see Figures 2 and 3), as shown in Figure 1. The quantum object confinement device 200 / 300 is configured to confine multiple quantum objects, and the quantum state of each quantum object can be manipulated or evolved in a controlled manner (e.g., according to a quantum circuit).

[0052] For example, quantum computation functions (such as 1-qubit quantum logic gates, 2-qubit quantum logic gates, initialization, read, and / or measurement operations) can be performed on quantum objects located within quantum computation locations defined by the confinement devices 200 / 300 and / or the system 100 including the confinement devices. For example, the confinement devices 200 / 300 are configured to maintain one or more quantum objects at quantum computation locations and to perform quantum operations on one or more quantum objects. In various embodiments, the system 100 including the confinement devices 200 / 300 includes one or more operating sources 64 (e.g., operating sources 64A, 64B, 64C) configured to provide operating signals (e.g., laser beams and / or pulses, microwave signals, etc.) such that the operating signals interact with one or more quantum objects located at quantum computation locations. In various embodiments, the system 100 comprising the confinement device 200 / 300 includes one or more magnetic field generators 70 (e.g., magnetic field generators 70A, 70B) configured to provide a controlled magnetic field and / or magnetic field gradient at the quantum operation location in order to perform one or more quantum operations on one or more quantum objects located at the quantum operation location. In various embodiments, the system 100 comprising the confinement device 200 / 300 includes an optical collection system 80 configured to collect and / or detect light and / or photons emitted by one or more quantum objects located at the quantum operation location.

[0053] In one embodiment, the system 100 comprising the confinement device 200 / 300 is a quantum charge-coupled device (QCCD) based quantum computer and / or includes a quantum computer. For example, one or more quantum objects confined by the confinement device 200 / 300 may be used as qubits in the quantum computer.

[0054] In various embodiments, the system 100 comprises a computing entity 10 and a quantum computer 110. In various embodiments, the quantum computer 110 comprises a controller 30 and a quantum processor 115. In various embodiments, the quantum processor 115 comprises a cryostat and / or vacuum chamber 40 surrounding a confinement device 200 / 300, one or more operating sources 64 (e.g., operating sources 64A, 64B, 64C), one or more voltage sources 50, one or more magnetic field generators 70 (e.g., magnetic field generators 70A, 70B), an optical collection system 80, and / or the like. In various embodiments, the controller 30 is configured to control the operation of the operating sources 64, voltage sources 50, magnetic field generators 70, vacuum system and / or cryogenic cooling system (not shown), etc. (e.g., to control one or more drivers configured to operate). In various embodiments, the controller 30 is configured to receive signals (e.g., electrical signals) generated and provided by the optical collection system 80.

[0055] In one embodiment, one or more operating sources 64 may include one or more lasers (e.g., optical lasers, microwave sources and / or masers, etc.) or other operating sources. In various embodiments, one or more operating sources 64 are configured to operate and / or induce the controlled evolution of the quantum state of one or more quantum objects within the confinement device 200 / 300. For example, a first operating source 64A is configured to generate and / or provide a first operating signal, and a second operating source 64B is configured to generate and / or provide a second operating signal. The first and second operating signals are configured to perform one or more quantum operations (e.g., a one-qubit gate, a two-qubit gate, cooling, initialization, read / measurement, etc.) on the quantum object confined by the confinement device 200 / 300.

[0056] In one embodiment, one or more operating sources 64 each provide an operating signal (e.g., a laser beam, etc.) to one or more parts (e.g., quantum computing positions) of the atomic object confinement device 200 / 300 via a corresponding beam path system 66 (e.g., beam path systems 66A, 66B, 66C). In various embodiments, at least one beam path system 66 includes a modulator configured to modulate the operating signal provided to the confinement device 200 / 300 via the beam path system 66. In various embodiments, the operating sources 64, the active components of the beam path systems 66 (e.g., modulators and / or similar), and / or other components of the quantum computer 110 are controlled by a controller 30.

[0057] In various embodiments, the confinement device 200 / 300 is an ion trap such as a surface ion trap or a pole ion trap. In various embodiments, the quantum object is an ion, an atom, an ionic crystal and / or a group of ions, an atomic crystal and / or a group of ions, an ionic, molecular, and / or multipolar molecule, a quantum dot, a quantum particle, a group, a crystal, and / or a combination thereof (e.g., an ionic crystal). In various embodiments, the confinement device 200 / 300 is a confinement device suitable for confining the quantum object of the embodiment.

[0058] In various embodiments, the quantum computer 110 comprises one or more voltage sources 50. For example, the voltage sources may be arbitrary wave generators (AWGs), digital-to-analog converters (DACs), and / or other voltage signal generators. For example, the voltage sources 50 may comprise a plurality of control voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. In one embodiment, the voltage sources 50 are electrically connected to corresponding potential generating elements (e.g., control electrodes and / or RF electrodes) of the confinement device 200 / 300. In various embodiments, the voltage sources 50 include a sorting voltage source electrically connected to potential generating elements (e.g., control electrodes and / or RF electrodes) of the sorting section of the confinement device 200 / 300, and an operation voltage source electrically connected to potential generating elements (e.g., control electrodes and / or RF electrodes) of the arithmetic section of the confinement device 200 / 300.

[0059] In various embodiments, the voltage signal generated by the voltage source 50 is filtered before being applied to the potential generating elements (e.g., control electrodes and / or RF electrodes) of the sort section of the confinement device 200 / 300. In one embodiment, the system 100 includes a sort filter 52 and a calculation filter 54. The sort filter 52 is configured to filter the voltage signal applied to the potential generating elements (control electrodes and / or RF electrodes, etc.) of the sort section of the confinement device 200 / 300. The calculation filter 54 is configured to filter the voltage signal applied to the potential generating elements (control electrodes and / or RF electrodes, etc.) of the calculation section of the confinement device 200 / 300. In various embodiments, the sort filter 52 and the calculation filter 54 have different filter responses, different cutoff frequencies, etc.

[0060] In various embodiments, the quantum computer 110 comprises one or more magnetic field generators 70 (e.g., magnetic field generators 70A, 70B). For example, the magnetic field generators may be an internal magnetic field generator 70A located inside the cryogenic and / or vacuum chamber 40, and / or an external magnetic field generator 70B located outside the cryogenic and / or vacuum chamber 40.

[0061] In various embodiments, the magnetic field generator 70 includes permanent magnets, Helmholtz coils, electromagnets, etc. In various embodiments, the magnetic field generator 70 is configured to generate a magnetic field and / or magnetic field gradient having a specific magnitude and a specific magnetic field direction at one or more locations defined by the confinement device 200 / 300.

[0062] In various embodiments, the quantum computer 110 includes an optical collection system 80 configured to collect and / or detect photons (e.g., stimulated emission) generated by quantum objects positioned at each quantum operation location (e.g., during read / measurement operations). The optical collection system 80 consists of one or more optical elements (e.g., lenses, mirrors, waveguides, optical fiber cables, etc.) and one or more photodetectors. In various embodiments, the photodetectors may be photodiodes, photomultiplier tubes, charge-coupled device (CCD) sensors, complementary metal oxide semiconductor (CMOS) sensors, micro electro mechanical system (MEMS) sensors, and / or other photodetectors that are highly sensitive to light of the expected fluorescence wavelength of the quantum objects. In various embodiments, the detectors may communicate electronically with the controller 30 via one or more digital-to-analog converters 625 (see Figure 6), etc.

[0063] In various embodiments, the computing entity 10 is configured to allow a user to provide input to the quantum computer 110 (for example, through the user interface of the computing entity 10) and to receive, view, etc., outputs from the quantum computer 110. The computing entity 10 may communicate with the controller 30 of the quantum computer 110 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In exemplary embodiments, the computing entity 10 may convert, configure, or format information / data, quantum computing algorithms (e.g., quantum circuits), etc., into a computing language, executable instructions, command set, etc., that the controller 30 can understand, execute, and / or implement.

[0064] In various embodiments, the controller 30 is configured to control a voltage source 50, a magnetic field generator 70, a cryogenic system and / or vacuum system for controlling the temperature and / or pressure in the cryogenic and / or vacuum chamber 40, an operating source 64, and / or other systems for controlling various environmental conditions (e.g., temperature, pressure, etc.) in the cryogenic and / or vacuum chamber 40, which are configured to manipulate and / or induce the controlled evolution of the quantum state of one or more quantum objects in the confinement device 200 / 300, and / or read and / or measure the quantum (e.g., qubit) state of one or more quantum objects in the confinement device 200 / 300. For example, the controller 30 may induce the controlled evolution of the quantum state of one or more quantum objects confined in the confinement device 200 / 300 in order to execute a quantum circuit and / or algorithm. For example, the controller 30 may read and / or detect the quantum state of one or more quantum objects in the confinement device 200 / 300 at one or more points in time during the execution of the quantum circuit. In various embodiments, quantum objects confined by a confinement device are used as qubits in a quantum computer 110.

[0065] [Example atomic object confinement device] Figure 2 provides a top view of at least a portion of an exemplary confinement device 200 that may be used to confine one or more quantum objects. For example, in the shown embodiment, the confinement device is an ion trap (e.g., a surface ion trap), and the quantum objects are ions and / or ionic crystals. In the exemplary embodiment, the confinement device 200 (e.g., a surface ion trap) is manufactured as part of an ion trap chip and / or as part of an ion trap device and / or package.

[0066] The confinement device 200 comprises sort sections 210 (e.g., sort sections 210A, 210B) and arithmetic sections 230. In the illustrated embodiment, the arithmetic section 230 is located between two sort sections 210. In various other embodiments, the arithmetic section 230 may be located between three or four sort sections 210. In various embodiments, multiple arithmetic sections 230 may be located between pairs of sort sections 210, etc. In particular, in various embodiments, the confinement device 200 comprises one or more sort sections 210 and one or more arithmetic sections 230.

[0067] The sort section 210 comprises a plurality of sort confinement regions 212 connected to adjacent sort confinement regions 212 by their respective joints 216. For example, in the illustrated embodiment, the sort confinement regions 212 of the sort section 210 form a grid or two-dimensional array of confinement regions. In various embodiments, the distance between joints l is shown in Figure 2. S The length scale of the sort section shown is the same as the length scale of the operation section (for example, the distance between junctions l). O It is shorter than ).

[0068] The computation section 230 has a plurality of computation confinement regions 232 along which one or more quantum computation positions 234 are defined. In various embodiments, each computation confinement region 232 has the same number and the same spatial distribution of quantum computation positions 234. In various embodiments, different computation confinement regions 232 may have a different number and / or different spatial distributions of quantum computation positions 234. In one embodiment, the various quantum computation positions 234 may be aligned so that a beam path (e.g., a beam provided via a beam path system 66) is incident on the plurality of quantum computation positions 234.

[0069] In various embodiments, the confinement device 200 comprises one or more transition zones 220 (e.g., transition zones 220A, 220B). In various embodiments, the transition zones 220 are located between the sort section 210 and the arithmetic section 230. Each transition zone 220 has a plurality of transition confinement regions 222. Each transition confinement region 222 connects one or more sort confinement regions 212 to one or more arithmetic confinement regions 232. For example, a quantum object is transported from the sort section 210 to the arithmetic section 230 (or vice versa) along the transition confinement regions 222 of the transition zone 220.

[0070] Figure 3 shows another example of a confinement device 300. The confinement device 300 comprises a sorting section 310 (e.g., sorting sections 310A, 310B) and an arithmetic section 330. In the illustrated embodiment, the arithmetic section 330 is located between the two sorting sections 310. In particular, in various embodiments, the confinement device 300 comprises one or more sorting sections 310 and one or more arithmetic sections 330.

[0071] The sort section 310 comprises a plurality of sort confinement regions 312 connected to adjacent sort confinement regions 312 by their respective junctions 316. For example, in the illustrated embodiment, the sort confinement regions 312 of the sort section 310 form a grid or a two-dimensional array of confinement regions.

[0072] The operation section 330 comprises a plurality of operation confinement regions 332, each of which one or more quantum operation locations are defined. In the illustrated embodiment, the quantum operation locations include a read and / or measure location 336 and a gate location 334. For example, the gate location 334 is located between two read and / or measure locations 336. For example, the gate location 334 is configured to perform quantum logic operations (e.g., a one-qubit gate, a two-qubit gate, etc.). The read and / or measure location 336 is configured to perform read and / or measure operations.

[0073] The operational confinement region 332 of the confinement device 300 is curved. For example, the operational confinement region 332 in the embodiment shown in Figure 3 has the shape of a single period of a sine function or sine wave. In various embodiments, the operational confinement region 332 may have various shapes depending on the application.

[0074] In various embodiments, the confinement device 300 comprises one or more transition zones 320 (e.g., transition zones 320A, 320B). In various embodiments, the transition zones 320 are located between the sort section 310 and the arithmetic section 230. Each transition zone 320 has a plurality of transition confinement regions 322. Each transition confinement region 322 connects one or more sort confinement regions 312 to one or more arithmetic confinement regions 332. For example, a quantum object is transported from the sort section 310 to the arithmetic section 330 (or vice versa) along the transition confinement regions 322 of the transition zone 320.

[0075] In various embodiments, the shape and / or computation parameters of sort sections 210, 310 differ from those of computation sections 230, 330. In various embodiments, the shape and / or computation parameters of transition zones 220, 320 transition or change across the width of the transition zone, and as a result, when a quantum object is transported from sort sections 210, 310 through transition zones 220, 320 to computation sections 230, 330, the quantum object experiences a slow adiabatic change in its environment. For example, the quantum object-confinement surface distance in sort sections 210, 310 (e.g., the distance between the quantum object and the surface of the confinement device) is shorter than the quantum object-confinement surface distance in computation sections 230, 330. Therefore, as the quantum object passes through the transition region, the surface distance of the quantum object confinement device changes slowly adiabatically.

[0076] In the illustrated embodiment, the arithmetic section 330 is located between two sort sections 310. In another embodiment, the sort section 310 is located between multiple arithmetic sections 330. For example, one or more arithmetic sections 330 may be located around a central sort section 310.

[0077] Figure 4A shows a portion of the sort section edge 410 that generates and / or defines sort confinement regions 212 / 312 when an appropriate voltage signal is applied to potential generating elements (e.g., control electrodes 414 and RF rails 416 (e.g., RF rails 416A, 416B)). In one embodiment, the sort section edge 410 is at least partially defined by a plurality of RF electrodes or RF rails 416 (e.g., RF rails 416A, 416B). In various embodiments, the sort section edge 410 is at least partially defined by a row of a plurality of control electrodes 412 (e.g., control electrodes 412A, 412B, 412C). Each row of control electrodes 412 has a plurality of control electrodes 414. In one embodiment, at least a portion of the control electrode 414 is operated by the application of a broadcast control signal, for example, as described in the aforementioned Patent Document 1 (U.S. Patent Application No. 63 / 379040) filed on October 11, 2022, the details of which are incorporated herein by reference as a whole.

[0078] In various embodiments, the pair of RF rails 416 are substantially parallel, and the longitudinal axes 418 of the two RF rails 416 of the pair of RF rails are parallel to each other. The two RF rails 416 of the pair of RF rails are arranged at a sort interval S S They are separated from each other. The thickness of the RF rail 416 in the direction perpendicular to the longitudinal axis 418 of the RF rail 416 is the sort thickness T. S In various embodiments, the rows of control electrodes 412 extend substantially parallel to the longitudinal axis 418 of the RF rail 416. In one embodiment, the width of the control electrodes 414 in a direction substantially parallel to the longitudinal axis 418 of the RF rail is the sort width W. S That is the case.

[0079] Figure 4B shows a portion of the calculation section edge 430 that generates and / or defines the calculation confinement region 232 / 332 when an appropriate voltage signal is applied to a potential generating element (e.g., control electrodes 434 and RF rails 436 (e.g., RF rails 436A, 436B)). In one embodiment, the calculation section edge 430 is at least partially defined by a plurality of RF electrodes or RF rails 436 (e.g., RF rails 436A, 436B). In various embodiments, the calculation section edge 430 is at least partially defined by a sequence of a plurality of control electrodes 432 (e.g., control electrodes 432A, 432B, 432C). Each sequence of control electrodes 432 has a plurality of control electrodes 434. In various embodiments, the control electrodes 434 can be controlled independently (e.g., independent voltage signals are applied). In various embodiments, two or more control electrodes 434 can be configured to receive a broadcasted voltage signal.

[0080] In various embodiments, the pair of RF rails 436 are substantially parallel, and the longitudinal axes 438 of the two RF rails 436 of the pair of RF rails are parallel to each other. The two RF rails 436 of the pair of RF rails are parallel to each other at an operating interval S O They are separated from each other by only a small amount. The thickness of the RF rail 436 in the direction perpendicular to the longitudinal axis 438 of the RF rail 436 is calculated as thickness T. O In various embodiments, the sequence of control electrodes 432 extends substantially parallel to the longitudinal axis 438 of the RF rail 436. In one embodiment, the width of the control electrodes 434 in a direction substantially parallel to the longitudinal axis 438 of the RF rail is the calculation width W. O That is the case.

[0081] In one embodiment, a confinement device comprising a sorting section side 410 and a computing section side 430 is a surface pole trap with symmetric RF rails 416, 436. In various embodiments, the RF rails 416, 436 and the control electrodes 414, 434 generate potentials and / or electric fields experienced by quantum objects within respective sorting confinement regions 212, 312 and computing confinement regions 232, 332 of the confinement devices 200, 300. In particular, the RF rails 416, 436 are configured to define respective sorting confinement regions 212, 312 and respective computing confinement regions 232, 332, and the control electrodes 414, 434 may be configured to at least partially control the transfer and / or movement of quantum objects along respective confinement regions.

[0082] As described above, in various embodiments, the shape and / or computing parameters of the sorting sections 210, 310 are different from the shape and / or computing parameters of the computing sections 230, 330. FIGS. 4A and 4B show at least some shape differences between the sorting section side 410 and the computing section side 430. For example, in various embodiments, the sorting width W S is smaller than the computing width W O (W S < W O ). In another example, in various embodiments, the sorting interval S S is larger than the computing interval S O (S S > S O ). In yet another example, in various embodiments, the sorting thickness T S is larger than the computing thickness T O (T S > T O ).

[0083] For example, the classification filter 52 used to filter the voltage signal applied to the potential generation elements (e.g., RF rail 416, control electrode 414) on the sort section edge 410 may have a different filtering response than the calculation filter 54 used to filter the voltage signal applied to the potential generation elements (e.g., RF rail 436, control electrode 434) on the calculation section edge 430. For example, the calculation filter 54 may be configured to filter the voltage signal to provide a less noisy filtered voltage signal than the sort filter 52 in one or more frequency bands. In another example, at least in part, due to the difference in the thickness and spacing of the RF rails when comparing the sort section and the calculation section, the surface distance between the quantum object and the confinement device is shorter for quantum objects located in the sort section than for quantum objects located in the calculation section.

[0084] For example, Figure 5A shows the quantum object-confinement device surface distance of a quantum object based on where the quantum object is located within the confinement device 200 / 300. In this specification, the quantum object-confinement device surface distance is the distance between the quantum object and the surface of the confinement device. For example, the quantum object-confinement device surface distance is the distance in the z direction, as shown in Figures 4A and 4B. In Figures 4A and 4B, the surface of the confinement device is shown in the xy-plane.

[0085] As shown in Figure 5A, when the quantum object is placed in the first sort section 210A or the second sort section 210B, the surface distance of the quantum object-confinement apparatus is the sort distance H S Therefore, when the quantum object is placed in the computation section 230, the quantum object-confinement device surface distance is the computation distance H O Therefore, the operation distance is greater than the sort distance (H S <H O In one embodiment, the sort distance H S The range is 20 μm to 100 μm. In one embodiment, the sort distance H S The range is 20 μm to 50 μm. In various embodiments, the sorting distance HS It is less than 20 μm. In one embodiment, the calculation distance H O The range is 20 μm to 100 μm. In one embodiment, the calculation distance H O The range is 30 μm to 100 μm. For example, in one embodiment, the calculation distance H O This range is from 30 μm to 60 μm.

[0086] When a quantum object enters the transition zone 220A from the first sort section 210A, the surface distance between the quantum object and the confinement device is the sort distance H S As the quantum object passes through the transition zone 220A and moves toward the computation section 230, the surface distance between the quantum object and the confinement device changes monotonically. For example, if the quantum object passes through the transition zone 220A adiabatically, the surface distance of the quantum object confinement device changes, so that the quantum information stored by the quantum object is not disturbed or confused even when the quantum object passes through the transition zone. When the quantum object reaches the edge of the transition zone 220A adjacent to the computation zone, the surface distance of the quantum object confinement device changes to the computation distance H O It will become.

[0087] In various embodiments, the sort width W S H is the sort distance. S Half of the sort distance H S A range up to 1.2 times (for example, H S / 2 <W S <1.2×H S ) is the calculation width W in various embodiments. O The calculation distance H O From half of the calculation distance H O A range up to 1.2 times (for example, H O / 2 <W O <1.2×H O ) is the sort distance H. S The calculation distance H O Because it is shorter than, sort width W S The calculation width is W OIt is smaller than. Figure 5B shows an example of how the geometric shapes of sort sections 210,310 differ from the shapes of calculation sections 230,330. For example, the sorting thickness T of the RF rail 416 of sort sections 210,310. S This is the calculation thickness T of the RF rail 436 in the calculation section 230,330. O Smaller than. The thickness of the RF rail in transition zones 220 and 320 gradually changes across each transition zone. In various embodiments, the sort thickness T of the RF rail S and calculation thickness T O The thickness is 200 μm or less. In one embodiment, the sorting thickness T S The thickness is 150 μm or less. For example, in one embodiment, the sorting thickness T S The range is 22 μm to 150 μm. In one embodiment, the sorting thickness T S The range is 22 μm to 100 μm. In one embodiment, the calculated thickness T O This ranges from 50 μm to 200 μm. For example, in one embodiment, the calculated thickness T O This range is from 100 μm to 200 μm.

[0088] Figure 5B shows an example of how the geometric shapes of sort sections 210 and 310 differ from those of calculation sections 230 and 330. For example, the sorting thickness T of the RF rail 416 in sort sections 210 and 310. S This is the calculation thickness T of the RF rail 436 in the calculation section 230,330. O It is smaller than the RF rail thickness of the RF rail within the transition zone, and the sorting thickness T at the edges of transition zones 220, 320 adjacent to and / or near the sorting section. S From there, the calculation thickness T at the edges of the transition zones 220, 320 adjacent to and / or near the calculation section. O The thickness of the RF rails within transition zones 220 and 320 changes gradually across each transition zone.

[0089] Figure 5C is another example showing how the geometric shapes of sort sections 210,310 differ from those of calculation sections 230,330. For example, the spacing between parallel pairs of RF rails 416 in sort sections 210,310 is the sort spacing S S Therefore, the spacing between parallel pairs of RF rails 436 on the side 430 of the calculation section is the calculation interval S O The sort interval is S. S The calculation interval S O Larger than the spacing between parallel pairs of RF rails within the transition zone, the sort spacing S at the ends of transition zones 220, 320 adjacent to and / or near the sort section. S From there, the calculation interval S at the edges of transition zones 220, 320 adjacent to and / or near the calculation section. O The spacing between parallel pairs of RF rails in transition zones 220 and 320 changes gradually across each transition zone. In various embodiments, the calculation interval S O and sort interval S S The range is 16 μm to 200 μm. For example, in one embodiment, the calculation interval S O The range is 16 μm to 120 μm. For example, in one embodiment, the calculation interval S O The range is 16 μm to 100 μm. For example, in one embodiment, the sort interval S S The range is 50 μm to 200 μm. For example, in one embodiment, the calculation interval S O This range is from 100 μm to 200 μm.

[0090] For a quantum object passing through the transition zones 220,320 from sort sections 210,310 to computation sections 230,330 (e.g., along their respective transition confinement regions 222,322), it can be observed that the RF rails thicken and move closer to each other as the quantum object approaches computation sections 230,330. This increases the surface distance of the quantum object confinement apparatus as the quantum object moves toward computation sections 230,330 through the transition zones 220,320 (e.g., along their respective transition confinement regions 222,322). The spacing and thickness of the RF rails change gradually and / or smoothly so that the height of the quantum object changes adiabatically.

[0091] [Technical advantages] Conventional ion traps (e.g., surface ion traps) are configured to perform both sorting and computational functions in a common region. For example, sorting and logical quantum operations can be performed at the same location in the ion trap. The drawback of this approach is that sorting and computational functions typically require significantly different design requirements. For instance, in the part of the ion trap where sorting is performed, it may be desirable to minimize the distance between junctions to minimize the distance ions need to be transported to perform the sorting function. However, in such ion trap shapes, ions need to be confined near the surface of the ion trap, or this is implicitly required. High-speed sorting and transport functions require a broadband voltage source, which limits the degree of filtering that can be used to mitigate the effects of resonant noise. Furthermore, sorting functions are more susceptible to different noise sources, such as electric fields and voltage noise, and have different temperature requirements for the ionic crystal compared to computational functions.

[0092] In the region where computational functions are performed, a larger distance between the ion and the ion trap surface offers the advantages of (1) reducing heating effects that can interfere with computational functions, and (2) reducing laser scattering from the ion trap surface that could degrade the fidelity of reading and / or measurement operations. In the region where computational functions are performed, multiple individually controlled electrodes are typically required to compensate for imperfections in the trapping potential (or the quantum operations can be serialized). Since the smallest unit cell shape typically assumes about one qubit per junction, including a quantum computation compensation electrode in each unit cell can increase electrode and signal overhead. The aforementioned limitations on the distance between ions and the trap surface in the region where computational functions are performed can lead to an increase in RF electrode area, and consequently, an increase in capacitance, resulting in increased RF power consumption and potentially causing other technical problems. Furthermore, the smallest unit cell shape means that reducing the distance between junctions to increase classification speed also reduces the distance between quantum computation zones. This can increase technical difficulties related to finite laser beam width, laser scattering from fluorescent ions and trap surfaces, and crosstalk in quantum-controlled fields such as microwave fields.

[0093] Therefore, conventional ion traps, in which the functions of sorting classes and quantum computation classes are performed in a common domain of the ion trap, have technical problems.

[0094] Various embodiments offer technical solutions to these technical challenges. Several technical advantages are obtained by separating the quantum object confinement device into sections configured to perform classification and class storage functions and sections configured to perform quantum computation functions. Many of these offset the disadvantages of the smallest unit cell shape. For example, if the quantum computation position is not included in the sorting section, there are no constraints on using the surface distance of a smaller quantum object confinement device, and the relevant distance scale of the sorting section can be reduced because the number of electrodes required to adequately control the potential well is not so large. Since the sorting function typically requires less control over the potential well than quantum computation, the confinement device can, in principle, operate with fewer independent signals and electrodes, assuming that the quantum computation position can be shared serially.

[0095] Reducing the surface distance of the quantum object confinement device in the sort section allows for high-density storage of quantum objects, shortening sorting time and reducing the RF electrode footprint, thus decreasing RF power consumption. When no computational functions are performed within the sort section, wider bandwidth electronics (or looser filtering requirements) can be used to achieve high transfer speeds while minimizing the complexity of the electronic drive system. Furthermore, the increased density of the sort region can reduce the overall size, potentially mitigating laser scattering problems. By physically separating the quantum computation locations from the sort section and / or into separate confinement device computation sections, a larger surface distance between quantum objects and confinement devices can be ensured in the computation sections. This larger surface distance between quantum objects and confinement devices (compared to the sort section) can mitigate the heating problem of quantum objects during gate operations and reduce laser scattering during read and / or measurement operations. Additionally, the distance between quantum computation locations can be optimized for crosstalk problems without necessarily proportionally increasing the distance scale of the sort section. When isolated quantum computing locations are used in series, the ratio of qubits to quantum computing locations becomes much greater than 1, reducing the number of electrodes and signals required to activate all quantum computing locations. Therefore, various embodiments bring about technical improvements to the field of trapped atomic systems and quantum charge-coupled device (QCCD) based quantum computing.

[0096] [Example Controller] Various embodiments provide a system comprising a confinement device 200, 300 including one or more sorting sections 210, 310 configured to perform sorting and storage functions, and one or more arithmetic sections configured to perform quantum computation functions. In an exemplary embodiment, the system is a quantum charge-coupled device (QCCD-based) quantum computer 110 or other quantum computer. In various embodiments, the system (e.g., quantum computer 110) further includes a controller 30 configured to control various elements of the system. For example, the controller 30 may be configured to control a voltage source 50 configured to manipulate and / or induce the controlled evolution of the quantum states of one or more quantum objects confined by a confinement device, and / or to read and / or detect the quantum states of one or more quantum objects confined by a confinement device, a cryogenic system and / or vacuum system for controlling the temperature and pressure in the cryogenic and / or vacuum chamber 40, an operating source 64 (e.g., operating sources 64A, 64B, 64C), active components of a beampath system 66 (e.g., beampath systems 66A, 66B, 66C), a magnetic field generator 70 (e.g., magnetic field generators 70A, 70B), and / or other systems for controlling environmental conditions in the cryogenic and / or vacuum chamber 40 (e.g., temperature, humidity, pressure, magnetic field gradient, etc.).

[0097] As shown in Figure 6, in various embodiments, the controller 30 may include various controller elements, such as one or more processing devices 605, memory 610, driver controller elements 615, communication interfaces 620, digital-to-analog converters 625, etc. For example, one or more processing devices 605 may include one or more processing elements, such as a Complex Programmable Logic Device (CPLD), microprocessor, coprocessing entity, Application-Specific Instruction-set Processor (ASIP), integrated circuit, Application Specific Integrated Circuit (ASIC), Field-Programmable Gate Array (FPGA), Programmable Logic Array (PLA), hardware accelerator, and other processing devices and / or circuits. The term "circuit" may refer to an entirely hardware embodiment or a combination of hardware and computer program products. In an exemplary embodiment, one or more processing devices 605 of the controller 30 include and / or communicate with a clock. In various embodiments, this clock determines the clock cycle of the system.

[0098] For example, Memory 610 includes hard disks, ROM (Read Only Memory), PROM (Programmable Read Only Memory), EPROM (Erasable Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), flash memory, MMC (Multi Media Card), SD memory card, Memory Stick, CBRAM (Conductive Bridge Random Access Memory), PRAM (Parameter Random Access Memory), FeRAM (Ferroelectric Random Access Memory), RRAM (Resistive Random Access Memory), SONOS (Silicon Oxide Nitride Oxide Semiconductor), Racetrack Memory, RAM, DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory), FPM DRAM (Fast Page Mode DRAM), EDO DRAM (Extended Data Out DRAM), SDRAM (Synchronous Dynamic Random Access Memory), DDR SDRAM (Double-Data-Rate SDRAM), and DDR2. It may include one or more non-temporary memory such as volatile and / or non-volatile memory storage, including SDRAM (Double-Data-Rate2 SDRAM), DDR3 SDRAM (Double-Data-Rate3 SDRAM), RDRAM (Rambus DRAM), RIMM (Rambus Inline Memory Module), DIMM (Dual Inline Memory Module), SIMM (Single In-line Memory Module), VRAM (Video Random Access Memory), cache memory, and register memory.In various embodiments, the memory 610 may store qubit records corresponding to qubits of the quantum computer (e.g., in a qubit record data store, qubit record database, qubit record table, etc.), calibration tables, executable queuings, computer program code (e.g., one or more computer languages, a special controller language, etc.). In an exemplary embodiment, the execution of at least a portion of the computer program code stored in the memory 610 (e.g., by a processing device 605) causes the controller 30 to perform one or more steps, operations, processes, etc. described herein for controlling one or more components of the quantum computer 110 (e.g., a voltage source 50, an operation source 64, a magnetic field generator 70, etc.) to detect and / or read the quantum state of one or more quantum objects, causing a controlled evolution of the quantum state of one or more quantum objects.

[0099] In various embodiments, the driver controller element 615 may include one or more drivers and / or controller elements, each configured to control one or more drivers. In various embodiments, the driver controller element 615 may include drivers and / or driver controllers. For example, a driver controller may be configured to operate one or more corresponding drivers according to executable instructions, commands, etc., scheduled and executed by the controller 30 (e.g., by the processing device 605). In various embodiments, the driver controller element 615 may allow the controller 30 to operate the operating source 64. In various embodiments, the drivers may be laser drivers, vacuum component drivers, RF, control, and / or drivers for controlling the flow of current and / or voltage applied to other electrodes (e.g., shim electrodes) used to maintain and / or control the confinement potential of a confinement device (and / or other drivers for providing driver action sequences and / or control signals to potential generating elements of a confinement device), cryogenic and / or vacuum system component drivers, etc. For example, the driver may control and / or include a control and / or RF voltage driver and / or voltage source that provides voltage and / or electrical signals to control electrodes 414, 434 and / or RF rails 416, 436. In various embodiments, the controller 30 includes means for transmitting and / or receiving signals from one or more detectors, such as photodetector components of the optical acquisition system 80 (e.g., cameras, MEMS cameras, CCD cameras, photodiodes, photomultiplier tubes, etc.). For example, the controller 30 may include one or more digital-to-analog converters 625 configured to receive signals from one or more detectors, photodetector components, calibration sensors, etc.

[0100] In various embodiments, the controller 30 may include a communication interface 620 for interfaceing with and / or communicating with one or more computing entities 10. For example, the controller 30 may include a communication interface 620 for receiving executable instructions, command sets, etc., from the computing entities 10 and providing the computing entities 10 with outputs received from the quantum processor 115 (e.g., via the optical collection system 80) and / or the results of processing the outputs (received from the quantum processor 115). In various embodiments, the computing entities 10 and the controller 30 may communicate directly via wired and / or wireless connections and / or via one or more wired and / or wireless networks 20.

[0101] [Example Computing Entity] Figure 7 provides a schematic diagram illustrating an exemplary computing entity 10 that may be used in conjunction with embodiments of the present invention. In various embodiments, the computing entity 10 is configured to allow a user to provide input to a quantum computer 110 (for example, through the user interface of the computing entity 10), and to receive, display, analyze, and so on, output from the quantum computer 110.

[0102] As shown in Figure 7, the computing entity 10 may include an antenna 712, a transmitter 704 (e.g., a radio), a receiver 706 (e.g., a radio), and a processing device 708 that provides a signal to the transmitter 704 and receives a signal from the receiver 706.

[0103] The signals provided to each transmitter 704 and the signals received by the receiver 706 may include signaling information / data in accordance with applicable wireless system radio interface standards for communication with various entities such as the controller 30 and other computing entities 10. In this regard, computing entities 10 may operate using one or more radio interface standards, communication protocols, modulation types, and access types. For example, computing entities 10 may be configured to receive and / or provide communications using wired data transmission protocols such as Fiber Distributed Data Interface (FDDI), Digital Subscriber Line (DSL), Ethernet, Asynchronous Transfer Mode (ATM), Frame Relay, Data Over Cable Service Interface Specification (DOCSIS), or any other wired transmission protocol.Similarly, Computing Entity 10 includes General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDMA) (registered trademark), Global System for Mobile communications (GSM), Enhanced Data rates for GSM Evolution (EDGE), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolutionary Universal Terrestrial Radio Access Network (E-UTRAN), Evolution-Data Optimized (EVDO), and High-Speed ​​Packet Access (HSPA). It may be configured to communicate over a wireless external communication network using any of the following protocols: IEEE 802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), Ultra-Wide Band (UWB), Infrared Radiation (IR) protocol, Near Field Communication (NFC) protocol, Wibree, Bluetooth protocol, Wireless Universal Serial Bus (USB) protocol, and / or any other Wi-Fi protocol.Computing entity 10 uses such protocols and standards as follows: Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS / SSL / Secure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP) Communication may also be conducted using protocols such as the Protocol, or by using a hypertext markup language such as HTML.

[0104] Through the aforementioned communication standards and protocols, the computing entity 10 can communicate with various other entities using concepts such as unstructured supplementary service information / data (USSD), short message service (SMS), multimedia messaging service (MMS), dual-tone multi-frequency signaling (DTMF), and / or subscriber identification module dialer (SIM dialer). The computing entity 10 can also download changes, add-ons, and updates to its firmware, software (including, for example, executable instructions, applications, and program modules), and operating system. In various embodiments, the computing entity 10 further includes one or more network interfaces 720 configured to communicate over one or more wired and / or wireless networks 20.

[0105] The computing entity 10 may also include a user interface device, which includes one or more user input / output interfaces (e.g., a display 716 and / or a speaker / speaker driver connected to the processing device 708, and a touchscreen, keyboard, mouse, and / or microphone connected to the processing device 708). For example, a user output interface may be configured to provide applications, browsers, user interfaces, interfaces, dashboards, screens, web pages, pages, and / or similar terms used herein to be interchangeable, which run on and / or are accessible through the computing entity 10, in order to cause the display or audible presentation of information / data, and for interaction with that information / data via one or more user input interfaces. A user input interface may include any of many devices that enable the computing entity 10 to receive data, such as a keypad 718 (hard or soft), a touch display, a voice / speech or motion interface, a scanner, a reader, or other input device. In embodiments including a keypad 718, the keypad 718 may include (or trigger the display of) conventional numeric keys (0-9) and associated keys (#,*), and other keys used to operate the computing entity 10, and may include a set of keys that can be operated to provide a complete set of alphabet keys or a complete set of alphanumeric keys. In addition to providing input, the user input interface may be used to activate or deactivate certain functions, such as a screen saver and / or sleep mode. Through such input, the computing entity 10 can collect information / data, user interactions / inputs, etc.

[0106] The computing entity 10 may also include volatile storage or memory 722 and / or non-volatile storage or memory 724, which may be embedded and / or removable. For example, non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, etc. Volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, etc. The volatile and non-volatile storage or memory may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, bytecode, compiled code, interpreted code, machine code, executable instructions, etc., for implementing the functions of the computing entity 10.

[0107] [Conclusion] Many modifications, improvements, and other embodiments of the invention described herein will come to mind for those skilled in the art to which the invention relates, benefiting from the teachings presented in the above description and the accompanying drawings. Therefore, it should be understood that the invention should not be limited to the specific embodiments disclosed, and modifications and other embodiments are intended to be included within the scope of the appended claims. While specific terminology is used herein, these terms are used only in a general and descriptive sense and not for limiting purposes. [Explanation of Symbols]

[0108] 10 Computing Entities 20 Wireless Networks 30 controllers 40 Vacuum Chamber 50 Voltage source 52 sort filters 54. Arithmetic Filters 64 Operation source 64A Operation source, 1st operation source 64B Operation source, 2nd operation source 64C operation source 66 Beampath System 66A Beampath System 66B Beampath System 66C Beampath System 70 Magnetic field generator 70A magnetic field generator, internal magnetic field generator 70B Magnetic field generator, external magnetic field generator 80 Light Collection System 100 Systems 110 Quantum Computers 115 Quantum Processors 200 Confinement device 210 Sort Section 210A Sort section, 1st sort section 210B Sort section, second sort section 212 sort confinement region 216 Joint 220 Transition Zones 220A Transition Zone 220B Transition Zone 222 Transition confinement region 230 Calculation Section 232 arithmetic confinement regions 234 Quantum operation position 300 Confinement devices 310 Sort Section 310A Sort Section 310B Sort Section 312 sort confinement regions 316 Joint 320 Transition Zones 320A Transition Zone 320B Transition Zone 322 Transition confinement region 330 Calculation Section 332 arithmetic confinement regions 334 Gate position 336 Measurement position 410 sort section edges 412 Control electrodes 412A Control electrode 412B Control electrode 412C control electrode 414 Control electrodes 416 RF Rail 416A RF Rail 416B RF Rail 418 Long axis 430 Calculation Section Edges 432 Control electrodes 432A Control electrode 432B Control electrode 432C control electrode 434 Control electrodes 436 RF Rail 436A RF Rail 436B RF Rail 438 Long axis 605 Processing Devices 610 memory 615 Driver Controller Element 620 Communication Interfaces 625 Digital-to-Analog Converter 704 Transmitter 706 Receiver 708 Processing Devices 712 Antenna 716 displays 718 Keypad 720 Network Interfaces 722 memory 724 memory

Claims

1. One or more sort sections, The calculation section, Equipped with, Each of the one or more sort sections has a plurality of sort section radio frequency rails, The plurality of sort section radio frequency rails are configured to define a plurality of sort confinement regions configured to confine a plurality of quantum objects when a sort radio frequency voltage is applied. Each of the plurality of sort section radio frequency rails has a sorting thickness in a direction perpendicular to the longitudinal axis of the sort section radio frequency rail. The calculation section has a plurality of calculation section radio frequency rails, The plurality of computational section radio frequency rails are configured to define a plurality of computational confinement regions configured for confining the plurality of quantum objects when an computational radio frequency voltage is applied. Each of the plurality of calculation section radio frequency rails has a calculation thickness in a direction perpendicular to the longitudinal axis of the calculation section radio frequency rail. A confinement device in which the calculation thickness is greater than the sorting thickness.

2. Multiple voltage sources, Multiple arithmetic filters, Multiple sort filters, A confinement device according to claim 1, wherein the confinement device is configured to confine a plurality of quantum objects, One or more sorting sections configured to perform a sorting function on multiple quantum objects, The operation section is configured to perform quantum operations on one or more quantum objects located within it, The confinement device comprising, Equipped with, The plurality of voltage sources are configured to generate each voltage source that is filtered by each of the plurality of arithmetic filters or the plurality of sort filters, The voltage signal filtered by the calculation filter is applied to the radio frequency rail of the plurality of calculation sections. A system in which a voltage signal filtered by a sort filter is applied to the multiple sorted section radio frequency rails.

3. The system according to claim 2, wherein the plurality of sort filters and the plurality of arithmetic filters have different filter responses.

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