Semiconductor device, anti-counterfeiting layer composition, method for manufacturing a semiconductor device, and method for determining authenticity.

Abstract

A composition for a forgery prevention layer for forming a forgery prevention layer in a semiconductor device includes pattern formation particles formed by an inorganic material having a refractive index n of 3 or more.

Description

Technical Field

[0001] The present invention relates to a semiconductor device, an anti-counterfeiting composition, a method for manufacturing a semiconductor device, and a method for authenticating authenticity.

Background Art

[0002] In the field of semiconductor devices, the distribution of counterfeit products has become a problem. Therefore, a technology capable of authenticating the authenticity of semiconductor devices is required. For authenticity determination, it is conceivable to attach a pattern unique to the semiconductor device in advance.

[0003] In relation to the above, Patent Document 1 (Japanese Patent No. 6326900) describes "a forgery prevention display body including a base material and an authenticity determination display portion provided along the base material." In this forgery prevention display body, the authenticity determination display portion extends in a curved or broken line shape with a non-uniform line width and has a thin line portion formed by the aggregation of metal atoms. The thin line portion forms a fingerprint-like pattern including a striped pattern arranged in parallel at a pitch wider than its line width. An alignment mark, which is composed of a concave portion or a convex portion with respect to the surface and has a certain positional relationship with the fingerprint-like pattern, is formed on the surface of the base material within the range where the fingerprint-like pattern is formed in plan view. [[ID=I7]]

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

[0005] In the technology described in Patent Document 1, a large number of processes are required to obtain a pattern for authenticity determination. It would be preferable to provide a new technology that can easily form a pattern for authenticity determination.

[0006] Therefore, the object of the present invention is to provide a new technology that can easily form patterns for determining authenticity.

[0007] The inventors have found that the above problem can be solved by using specific inorganic particles.

[0008] In other words, in one aspect, the present invention relates to a composition for forming an anti-counterfeiting layer on a protective layer provided on a semiconductor substrate. This anti-counterfeiting layer composition contains pattern-forming particles made of an inorganic material with a refractive index n of 3 or higher.

[0009] In another aspect, the present invention relates to a semiconductor device. This semiconductor device comprises an anti-counterfeiting layer. The anti-counterfeiting layer contains pattern-forming particles made of an inorganic material with a refractive index n of 3 or higher.

[0010] In another aspect, the present invention relates to a method for manufacturing a semiconductor device. This manufacturing method includes the steps of forming a protective layer on a semiconductor substrate and forming an anti-counterfeiting layer on the protective layer, which includes pattern-forming particles formed of an inorganic material with a refractive index n of 3 or more. The step of forming the protective layer includes the steps of supplying a protective layer-forming composition onto the semiconductor substrate and curing the supplied protective layer-forming composition. The step of forming the anti-counterfeiting layer includes the steps of supplying an anti-counterfeiting layer composition and curing the supplied anti-counterfeiting layer composition.

[0011] In another aspect, the present invention relates to a method for determining the authenticity of a semiconductor device. This authenticity determination method comprises the steps of: providing a genuine semiconductor device; generating authenticity data, which involves imaging the anti-counterfeiting layer of the genuine device and generating authenticity data indicating an authenticity determination pattern formed by pattern-forming particles; and determining whether or not the item to be determined is genuine, which involves observing the anti-counterfeiting layer of the item to be determined and comparing the authenticity determination pattern of the item to be determined with the authenticity data.

[0012] In another aspect, the present invention relates to a system for determining the authenticity of a semiconductor device. This authenticity determination system comprises: an authenticity data generation unit that generates authenticity data showing an authenticity determination pattern formed by pattern-forming particles based on image data of the anti-counterfeiting layer of a genuine semiconductor device; a determination target data generation unit that generates determination target data showing an authenticity determination pattern formed by pattern-forming particles based on image data of the anti-counterfeiting layer of a target item; and a comparison unit that compares the authenticity data with the determination target data to determine whether or not the target item is genuine.

[0013] The present invention provides a novel technique that allows for the easy formation of patterns for determining authenticity. [Brief explanation of the drawing]

[0014] [Figure 1] Figure 1 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. [Figure 2] Figure 2 is a schematic diagram showing an example of an image obtained when the anti-counterfeiting layer is observed with an optical microscope. [Figure 3] Figure 3 is a schematic diagram showing the configuration of the authenticity determination system. [Figure 4] Figure 4 is a graph showing the measurement results of the particle size distribution of Si (silicon) nanofillers in the example. [Modes for carrying out the invention]

[0015] Embodiments of the present invention will be described below with reference to the drawings. This embodiment relates to a counterfeit prevention technology for semiconductor devices. (1) Semiconductor equipment Figure 1 is a schematic cross-sectional view of a semiconductor device 1 according to this embodiment. This semiconductor device 1 includes a semiconductor substrate 2, a protective layer 3, and an anti-counterfeiting layer 4.

[0016] The semiconductor substrate 2 is a substrate on which the integrated circuit 7 is formed. For example, the semiconductor substrate 2 is a semiconductor chip or a semiconductor wafer. For example, the semiconductor substrate 2 is made of silicon.

[0017] The protective layer 3 is provided to protect the semiconductor substrate 2. In the example shown in Figure 1, the protective layer 3 is provided on the back surface of the semiconductor substrate 2 (the surface opposite to the surface on which the integrated circuit 7 is formed). In other words, the protective layer 3 is a protective film on the back surface of the semiconductor substrate 2.

[0018] The anti-counterfeiting layer 4 is a layer used to determine the authenticity of the semiconductor device 1. The anti-counterfeiting layer 4 is provided on the outermost layer of the semiconductor device 1. Specifically, the anti-counterfeiting layer 4 is provided on the protective layer 3.

[0019] The anti-counterfeiting layer 4 contains pattern-forming particles 5. The pattern-forming particles 5 are particles that form a pattern for determining authenticity. The pattern-forming particles 5 are made of an inorganic material with a refractive index n of 3 or higher. The pattern-forming particles 5 are randomly dispersed in the anti-counterfeiting layer 4.

[0020] In this embodiment, the anti-counterfeiting layer 4 of a genuine product is first imaged using an imaging device equipped with an optical microscope, and genuine product data is generated. The genuine product data is data that shows the pattern for determining the authenticity of a genuine product. During authenticity determination, the anti-counterfeiting layer of the product to be determined is observed with an optical microscope. The authenticity determination pattern of the product to be determined is then compared with the genuine product data. This determines whether or not the product to be determined is genuine.

[0021] Here, in the present embodiment, since the pattern-forming particles 5 are formed of an inorganic material having a refractive index n of 3 or more, a pattern for forgery determination can be easily realized. Pattern-forming particles having such a refractive index generate scattered light based on a principle called Mie resonance. When scattered light in the visible region is generated, the pattern-forming particles are colored and can be visually recognized. Mie resonance means that when light with a wavelength λ (nm) is incident on a substance (refractive index n), the effective wavelength in the substance becomes λ / n (nm), and when the effective wavelength of the light λ / n (nm) is equal to the diameter of the particle, a standing wave is formed, and the lowest-order Mie resonance, that is, the electrical and magnetic dipole resonances appear in the optical region (see, for example, Japanese Patent No. 7277923). That is, particles using an inorganic material having a refractive index n of 3 or more selectively and strongly scatter light of a specific wavelength due to Mie resonance.

[0022] FIG. 2 is a schematic diagram showing an example of an image obtained when the anti-counterfeiting layer 4 is observed with an optical microscope. As shown in FIG. 2, in the anti-counterfeiting layer 4, individual pattern-forming particles 5 are observed as bright spots. If the pattern-forming particles 5 are randomly dispersed in the anti-counterfeiting layer 4, the pattern of the observed bright spots is unique to the semiconductor device 1. Also, such a pattern cannot be observed with the naked eye and becomes a complex pattern that is difficult to counterfeit. Therefore, the pattern of the bright spots can be used as a pattern for forgery determination. That is, according to the present embodiment, a pattern for forgery determination can be easily formed simply by randomly dispersing the pattern-forming particles 5. In the example of FIG. 2, bright spots that can be visually observed with a microscope are shown, but the bright spots are not limited to this, and for example, they may be points that do not substantially generate scattered light in the visible region but generate scattered light in the near-infrared region. In such a case, the bright spots may be recognized not visually but by an infrared sensor.

[0023] In addition, the color development due to Mie resonance is color development by structural color. The color development by structural color does not substantially fade. Therefore, a pattern for authenticity determination with high durability can be formed. The same applies to the generation of scattered light outside the visible region, and the pattern-forming particles generate scattered light semi-permanently due to Mie resonance.

[0024] Furthermore, the wavelength of the scattered light due to Mie resonance depends on the particle size of the particles. Usually, the particle size distribution of fine particles has a certain width. Therefore, if, as the above-mentioned pattern-forming particles 5, those containing a plurality of particles with different particle sizes instead of a plurality of particles with uniform particle sizes are used, different wavelengths of scattered light in the visible region can be generated for each particle, and bright spots of colors corresponding to their respective particle sizes can be generated. That is, the pattern-forming particles 5 contain a plurality of particles that develop colors of different colors, and information indicating the color of the bright spots in addition to the position of the bright spots can be used as a pattern for authenticity determination. Since the amount of information used for authenticity determination increases, authenticity determination can be performed more reliably. When the pattern-forming particles 5 contain particles configured to develop colors due to Mie resonance, by observing that a plurality of bright spots develop colors of different colors in the observed bright spot pattern, it can be confirmed that the pattern-forming particles 5 contain a plurality of particles with different particle sizes.

[0025] The above is the outline of this embodiment. Subsequently, the details of this embodiment will be described. (2) Anti-counterfeiting layer First, the anti-counterfeiting layer 4 will be described. As described above, the anti-counterfeiting layer 4 contains pattern-forming particles.

[0026] The thickness of the anti-counterfeiting layer is, for example, 0.1 to 20 μm, preferably 0.2 to 10 μm, more preferably 0.5 to 5 μm.

[0027] The anti-counterfeiting layer 4 is formed from an anti-counterfeiting layer composition. The anti-counterfeiting layer composition may be provided in the form of a film, or, for example, in the form of a liquid containing a solvent, or in the form of a solvent-free liquid curable composition obtained by fluidizing a low molecular weight polymerizable monomer. The anti-counterfeiting layer composition is preferably a resin composition. That is, the anti-counterfeiting layer 4 is a cured product of a resin composition. The anti-counterfeiting layer 4 can be formed by supplying a curable anti-counterfeiting layer composition onto the protective layer 3 and curing it.

[0028] The following describes the composition of the anti-counterfeiting layer, along with an example of the structure of the anti-counterfeiting layer. (Pattern-forming particles) As previously mentioned, the anti-counterfeiting layer composition includes pattern-forming particles.

[0029] The refractive index n of the inorganic material forming the pattern-forming particles should be 3 or higher. When the refractive index n is 3 or higher, light of a specific wavelength is selectively scattered by Mie resonance. This makes it easier to recognize bright spots formed by individual particles. The refractive index n is preferably 3.5 or higher, and more preferably 4.0 or higher. A higher refractive index n results in higher reflectivity and higher color development. As a result, the pattern for authenticity determination becomes easier to recognize.

[0030] As previously mentioned, the constituent materials of pattern-forming particles are inorganic materials. Using inorganic materials can increase the durability of the pattern. For example, when patterns are formed using pigments and dyes made from organic materials, the patterns tend to fade easily. In contrast, using inorganic materials allows for greater durability than when using organic materials.

[0031] The inorganic material forming the pattern-forming particles is preferably not a pure metal. If a pure metal is used, alteration due to oxidation or other factors may occur. Furthermore, metal elements may migrate from the pattern-forming particles to the surrounding environment. As a result, changes in the pattern may occur. Using an inorganic material other than a pure metal can suppress changes in the pattern due to alteration and migration.

[0032] Specific examples of inorganic materials that form pattern-forming particles include crystals of metal compounds, metalloids, and metalloid compounds. Examples of metal compounds include compounds formed from a metal and at least one element selected from the group consisting of oxygen, nitrogen, phosphorus, arsenic, and sulfur. Examples of metalloids include boron, silicon, germanium, arsenic, antimony, tellurium, selenium, polonium, and astatine. Examples of metalloid compounds include compounds formed from a metalloid and at least one element selected from the group consisting of oxygen, nitrogen, phosphorus, arsenic, and sulfur.

[0033] Specific examples of inorganic materials that form patterned particles include silicon (refractive index 4.32), GaAs (refractive index 4.27), GaP (refractive index 3.6), and InP (refractive index 3.0).

[0034] In a particularly preferred embodiment, the pattern-forming particles are silicon particles, and more preferably crystalline silicon particles. Silicon particles selectively and strongly scatter light of specific wavelengths. Furthermore, patterns formed using silicon particles have very high durability. They also have high heat resistance. Therefore, they are particularly suitable as a constituent material for pattern-forming particles.

[0035] The average particle size of the pattern-forming particles is, for example, 0.09 to 5.0 μm, preferably 0.1 to 2.0 μm. Within this range, a single particle generates scattered light with high intensity in the visible region (blue to red) or the near-infrared region (800 to 1200 nm). Therefore, the patterns formed by the pattern-forming particles become easily recognizable. The average particle size referred to here means the median diameter D50 in the particle size distribution measured using a laser diffraction particle size distribution analyzer.

[0036] The particle size distribution of the pattern-forming particles contained in the anti-counterfeiting layer 4 preferably has multiple peaks. As described above, each pattern-forming particle develops a color corresponding to its particle size, and if the pattern-forming particles include multiple particles with different particle sizes, each particle generates a bright spot of a color corresponding to its respective particle size. If the particle size distribution of the pattern-forming particles has multiple peaks, it becomes easier to obtain a pattern of bright spots with different colors. Therefore, the amount of information used for authenticity determination can be increased, making it possible to determine authenticity more reliably.

[0037] In one preferred embodiment, the pattern-forming particles are silicon particles, and the pattern-forming particles contain silicon particles having a particle size of 90 to 300 nm. More preferably, the particle size distribution of the pattern-forming particles has a cumulative value of 20% or more of the presence in the 90 to 300 nm range, and even more preferably, 25% or more. Regarding the particle size distribution of the pattern-forming particles, the upper limit of the cumulative value of the presence in the 90 to 300 nm range may be 100% or less, and 70% or less. The following particle sizes may also be used. Within this particle size range, individual particles tend to develop colors corresponding to their particle size, making it easy to increase the density of bright spots in the authenticity detection pattern.

[0038] In one preferred embodiment, the pattern-forming particles are silicon particles, and contain silicon particles with a particle size of 800 to 1200 nm. More preferably, the particle size distribution of the pattern-forming particles has an integrated value of 15% or more of the abundance in the 800 to 1200 nm range, and even more preferably, 25% or more. Regarding the particle size distribution of the pattern-forming particles, the upper limit of the integrated value of the abundance in the 800 to 1200 nm range may be 100% or less, or 70% or less. Within this particle size range, individual particles tend to generate scattered light in the near-infrared region corresponding to their particle size, making it easy to increase the density of bright spots in the authenticity determination pattern. When the pattern-forming particles are silicon particles, the bright spots can be observed by an infrared sensor, confirming that the pattern-forming particles contain silicon particles with a particle size of 800 to 1200 nm.

[0039] The content of pattern-forming particles is, for example, 0.01 to 5% by mass, preferably 0.05 to 1% by mass, based on the total mass of the anti-counterfeiting layer composition excluding the solvent. Within this range, the pattern-forming particles are dispersed in a suitable dispersion state for use as a pattern for authenticity determination.

[0040] Furthermore, while it is possible to determine the nature of the pattern-forming particles within the anti-counterfeiting layer by directly analyzing the anti-counterfeiting layer, it is also possible to determine them by extracting the pattern-forming particles from the anti-counterfeiting layer and observing them. For example, if the anti-counterfeiting layer is a resin composition, the pattern-forming particles can be selectively extracted by dissolving the resin components with a solvent. Alternatively, the anti-counterfeiting layer can be fired to remove components other than the pattern-forming particles that function as a binder, thereby extracting only the pattern-forming particles. (Curable resin composition) As described above, the anti-counterfeiting layer composition is preferably a curable resin composition. The anti-counterfeiting layer composition may be a thermosetting composition, an energy ray curable composition, or both a thermosetting composition and an energy ray curable composition.

[0041] As an energy-ray curable anti-counterfeiting layer composition, for example, a composition comprising an energy-ray curable compound (e.g., monomer or oligomer) and a photopolymerization initiator can be used.

[0042] Examples of energy-ray curable compounds include polyvalent (meth)acrylate monomers such as trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butylene glycol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate, as well as oligomers such as urethane (meth)acrylate, polyester (meth)acrylate, polyether (meth)acrylate, and epoxy (meth)acrylate. Preferably, polyester (meth)acrylate is used.

[0043] As the energy-ray curable compound, a polymer having photopolymerizable functional groups such as (meth)acryloyl groups and vinyl groups in its side chain may be used. For example, acrylic polymers can be used as such polymers, and a method is known in which a photopolymerizable functional group is added to the side chain of an acrylic polymer having reactive functional groups such as hydroxyl groups in its side chain by reacting it with a compound that can react with the above-mentioned reactive functional groups and has a photopolymerizable functional group, such as methacryloyloxyisocyanate.

[0044] When using these energy ray curable compounds, the photopolymerization initiator is preferably a photoradical polymerization initiator.

[0045] The content of the energy ray curable compound is, for example, 70 to 99% by mass, preferably 80 to 95% by mass, based on the total mass of the anti-counterfeiting layer composition excluding the solvent.

[0046] The photopolymerization initiator is not particularly limited. The content of the photopolymerization initiator is, for example, 0.5 to 15% by mass, preferably 1 to 10% by mass, based on the total mass of the anti-counterfeiting layer composition excluding the solvent.

[0047] Furthermore, the anti-counterfeiting layer composition may also contain a silane coupling agent. The inclusion of a silane coupling agent in the anti-counterfeiting layer improves adhesion between the anti-counterfeiting layer and the protective layer when the protective layer contains an inorganic filler, thereby preventing the anti-counterfeiting layer from peeling or falling off. The silane coupling agent is present in an amount of, for example, 0.5 to 15% by mass, preferably 1 to 10% by mass, based on the total mass of the anti-counterfeiting layer composition excluding the solvent.

[0048] As previously mentioned, the anti-counterfeiting layer composition may also be a thermosetting composition. In this case, for example, the anti-counterfeiting layer composition may be a composition containing the polymer component (A) and thermosetting component (B) described later for the "composition for forming a protective layer". (3) Protective layer As previously described, protective layer 3 is a layer for protecting the semiconductor substrate 2. In the example shown in Figure 1, protective layer 3 is a back surface protective film of the semiconductor substrate 2. More preferably, protective layer 3 is a back surface protective film provided on the back surface of a semiconductor substrate 2 (e.g., a semiconductor chip) that is mounted in a face-down manner. However, protective layer 3 does not necessarily have to be a back surface protective film. Protective layer 3 is a layer that protects the semiconductor substrate 2 and can serve as a base for the anti-counterfeiting layer 4. For example, protective layer 3 may be a sealing material layer that seals the semiconductor substrate 2. That is, it may be a layer formed of a so-called sealing resin.

[0049] The protective layer 3 is formed by a protective layer forming composition. The protective layer forming composition is preferably a curable composition. For example, the protective layer 3 is formed by supplying the protective layer forming composition onto the semiconductor substrate 2 and curing the supplied protective layer forming composition. The protective layer forming composition may be a thermosetting composition or an energy ray curable composition. It may also be a composition that has both thermosetting and energy ray curing properties.

[0050] When the protective layer 3 is a back surface protective film, the protective layer forming composition is preferably provided in film form. For example, as the protective layer forming film, a film is prepared in which the protective layer forming composition is supported on a support film. Then, the protective layer forming composition is transferred onto the semiconductor substrate 2 using the protective layer forming film. Subsequently, the protective layer 3 is formed by curing the transferred protective layer forming composition.

[0051] On the other hand, if the protective layer 3 is a sealing material layer, the protective layer 3 can also be formed by molding a protective layer-forming composition on the semiconductor substrate 2 using a mold.

[0052] However, in a preferred embodiment, the protective layer 3 is a back surface protective film formed using a protective layer forming film. When the protective layer 3 is a sealing layer and a mold is used for its molding, a release agent is usually used. As a result, components of the release agent may transfer to the surface of the protective layer 3. The transferred components of the release agent may reduce the adhesion of the anti-counterfeiting layer 4. In contrast, when a back surface protective film is formed using a protective layer forming film, the release film used as a support film for the protective layer forming film is relatively resistant to the transfer of release agents. Therefore, from the viewpoint of adhesion, it is preferable to use a back surface protective film formed using a protective layer forming film as the protective layer 3. That is, it is preferable to use the back surface protective film formed in this way as the base layer for the anti-counterfeiting layer 4.

[0053] Furthermore, the surface of the back protective film formed by transfer from the protective layer forming film tends to be smoother than the surface of the sealing material layer obtained using a mold. A smoother surface on the underlying protective layer 3 makes it easier to obtain good contrast when imaging the anti-counterfeiting layer 4. As a result, the pattern for authenticity determination becomes easier to recognize accurately. From this viewpoint as well, it is preferable to use the back protective film formed using the protective layer forming film as the underlying layer for the anti-counterfeiting layer 4 (i.e., as the protective layer 3).

[0054] If the protective layer 3 is a back surface protective film, the thickness of the protective layer 3 is, for example, 1 to 100 μm, preferably 5 to 50 μm.

[0055] As previously described, the protective layer 3 is formed by a protective layer-forming composition. As previously described, the protective layer-forming composition may be provided in the form of a film, but may also be provided in the form of a liquid containing a solvent, or in the form of a solvent-free liquid curable composition formed by fluidizing a low molecular weight polymerizable monomer. The composition of the protective layer 3 will be described in more detail below by describing the composition of the protective layer-forming composition. (Composition for forming a thermosetting protective layer) If it is a thermosetting composition, the protective layer-forming composition includes, for example, a polymer component (A), a thermosetting component (B), a curing accelerator (C), a silane coupling agent (D), and a coloring agent (E). (A) Polymer components Examples of polymer components (A) include acrylic resins (for example, resins obtained by addition polymerization of monomers containing at least acrylic acid ester monomers), polyesters, urethane resins (for example, resins having urethane bonds), acrylic urethane resins, silicone resins (for example, resins having siloxane bonds), rubber resins (for example, resins having a rubber structure), and phenoxy resins, with acrylic resins being preferred.

[0056] The content of polymer component (A) is, for example, 5 to 50% by mass, preferably 10 to 40% by mass, and more preferably 15 to 35% by mass, based on the total mass of the protective layer-forming composition excluding the solvent. (B) Thermosetting component Examples of the thermosetting component (B) include epoxy-based thermosetting resins, thermosetting polyimides, thermosetting polyurethanes, unsaturated polyesters, and silicone rubbers. Preferably, it is an epoxy-based thermosetting resin.

[0057] As an epoxy-based thermosetting resin, for example, one consisting of an epoxy resin (B1) and a thermosetting agent (B2) can be used.

[0058] Examples of epoxy resins (B1) include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated products, orthocresol novolac epoxy resins, dicyclopentadiene type epoxy resins, biphenyl type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenylene skeleton type epoxy resins, and other bifunctional or more epoxy compounds. Among these, it is preferable that a bisphenol A type epoxy resin is included.

[0059] The thermosetting agent (B2) is a substance that functions as a curing agent for epoxy resins. Examples of thermosetting agents include compounds having at least two functional groups that can react with epoxy groups in one molecule. Examples of such functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups in which an acid group has been anhydride. Preferably, the thermosetting agent includes an amino-based curing agent having an amino group. Examples of amino-based curing agents include dicyandiamide.

[0060] The content of the thermosetting component (B) (for example, the content of epoxy resin (B1) and thermosetting agent (B2)) is, for example, 5 to 30% by mass, preferably 15 to 20% by mass, based on the total mass of the protective layer-forming composition excluding the solvent. (C) Curing accelerator Examples of the curing accelerator (C) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole (imidazoles in which at least one hydrogen atom is substituted with a group other than a hydrogen atom); organophosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine (phosphines in which at least one hydrogen atom is substituted with an organic group); and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. Preferably, the curing accelerator (C) contains 2-phenyl-4,5-dihydroxymethylimidazole.

[0061] The content of the curing accelerator (C) is, for example, 0.1 to 1% by mass of the total mass of the protective layer-forming composition excluding the solvent. (D) Silane coupling agent Examples of silane coupling agents (D) include 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, and 3-(2-amino Examples include ethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfan, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, and imidazolesilane. Preferably, the silane coupling agent (D) contains 3-glycidoxypropyltrimethoxysilane.

[0062] The content of the silane coupling agent (D) is, for example, 0.1 to 1% by mass of the total mass of the protective layer-forming composition excluding the solvent. (E) Colorants As the coloring agent (E), inorganic pigments, organic pigments, and organic dyes can be used. Among these, inorganic pigments are preferred because they do not fade easily. Examples of inorganic pigments include carbon black, cobalt-based dyes, iron-based dyes, chromium-based dyes, titanium-based dyes, vanadium-based dyes, zirconium-based dyes, molybdenum-based dyes, ruthenium-based dyes, platinum-based dyes, ITO (indium tin oxide)-based dyes, and ATO (antimony tin oxide)-based dyes. Preferably, the coloring agent (E) contains carbon black.

[0063] The content of the coloring agent (E) is, for example, 0.1 to 10% by mass, preferably 0.5 to 5% by mass, based on the total mass of the protective layer-forming composition excluding the solvent. (Energy ray curable protective layer formation composition) As previously mentioned, the protective layer-forming composition may also be an energy-curable composition. In this case, the protective layer-forming composition can be realized, for example, by a composition containing the energy-curable compound and photopolymerization initiator described above for the "anti-counterfeiting layer".

[0064] Furthermore, if the curing type of the protective layer-forming composition is the same as that of the anti-counterfeiting layer composition, the protective layer-forming composition and the anti-counterfeiting layer composition can be cured together. (Filler) The protective layer-forming composition may contain fillers. By using fillers, the physical properties of the protective layer can be adjusted. For example, the physical properties of the protective layer can be made to approximate those of the semiconductor substrate 2.

[0065] The filler content in the protective layer-forming composition (i.e., the filler content in the protective layer) is preferably 30 to 70% by mass of the total mass of the protective layer-forming composition (calculated on the basis of active ingredients excluding the solvent). More preferably, the filler content is 35 to 65% by mass of the total mass of the protective layer.

[0066] The material of the filler is not particularly limited. For example, the filler may be an inorganic filler or an organic filler. Preferably, it is an inorganic filler. Examples of inorganic fillers include at least one selected from the group consisting of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, and boron nitride. Preferably, the filler is silica.

[0067] The size of the filler is not particularly limited. The average particle size of the filler is, for example, 0.05 to 5 μm, preferably 0.1 to 1.0 μm, and more preferably 0.1 to 0.5 μm. The average particle size referred to here is the value measured using a laser diffraction particle size analyzer.

[0068] Preferably, the filler is spherical. Using a spherical filler makes it easier to obtain the same authenticity determination pattern regardless of the lighting environment. That is, when observing the anti-counterfeiting layer, illumination light is incident on the protective layer 3. The incident illumination light is reflected by the filler. In this case, if the filler is spherical, the intensity and direction of the reflected light from the filler are less dependent on the direction of incidence of the illumination light. Therefore, it is easier to obtain the same authenticity determination pattern even if the lighting environment is different. Thus, it becomes possible to perform authenticity determination with high accuracy.

[0069] The spherical filler may be either oblate or perfectly spherical. Preferably, the spherical filler is perfectly spherical.

[0070] Preferably, 80% by mass or more of the total filler is spherical filler. More preferably, 90% by mass or more of the total filler is spherical filler, and even more preferably, 95% by mass or more of the total filler is spherical filler. Most preferably, substantially all of the filler is spherical filler. (4) Manufacturing method Next, we will explain a method for manufacturing the semiconductor device 1, using an example.

[0071] First, a semiconductor substrate 2 is prepared, and a protective layer 3 is formed on the semiconductor substrate 2. Specifically, a protective layer-forming composition is supplied onto the semiconductor substrate 2. Then, the protective layer-forming composition is cured. This forms the protective layer 3. Next, an anti-counterfeiting layer composition is supplied onto the protective layer 3. Then, the supplied anti-counterfeiting layer composition is cured. This forms the anti-counterfeiting layer 4. This results in a semiconductor device 1.

[0072] Furthermore, the curing of the protective layer-forming composition and the anti-counterfeiting layer-forming composition may be carried out simultaneously. In this case, first, the protective layer-forming composition is supplied onto the semiconductor substrate 2. Next, before the protective layer-forming composition is cured, the anti-counterfeiting layer-forming composition is supplied onto the protective layer-forming composition. Then, the protective layer-forming composition and the anti-counterfeiting layer-forming composition are cured simultaneously. For example, if both the protective layer-forming composition and the anti-counterfeiting layer-forming composition are of the thermosetting type, they can be cured simultaneously by heating. Alternatively, if both the protective layer-forming composition and the anti-counterfeiting layer-forming composition are of the energy ray-curing type, they can be cured simultaneously by irradiation with energy rays. This shortens the manufacturing process. Furthermore, the curing of the anti-counterfeiting layer-forming composition may be carried out before the curing of the protective layer-forming composition. However, in this case, if the curing types of the protective layer-forming composition and the anti-counterfeiting layer-forming composition are the same, there is a high possibility that the curing of the protective layer-forming composition will be carried out at least partially at the same time as the curing of the anti-counterfeiting layer-forming composition.

[0073] The semiconductor device 1 may be manufactured by a so-called wafer-level packaging process or by a panel-level packaging process. Examples of wafer-level packaging processes include wafer-level chip-size packaging (WLCSP) and fan-out wafer-level packaging. Examples of panel-level packaging processes include fan-out panel-level packaging. In these packaging processes, a protective layer 3 is formed on multiple semiconductor devices 1 (typically multiple semiconductor chips) at once. Subsequently, the multiple semiconductor devices 1 are separated into individual components. Here, the anti-counterfeiting layer 4 can be formed all at once after the formation of the protective layer 3 and before the separation of components. Since the anti-counterfeiting layer 4 can be formed on multiple semiconductor devices 1 at once, it is efficient.

[0074] In a preferred example, the semiconductor substrate 2 is a face-down type semiconductor chip. During manufacturing, the protective layer 3 is formed on the back surface of the wafer for the face-down type semiconductor chip as a back surface protective film. (5) Authenticity determination method and authenticity determination system Next, the authenticity determination method and authenticity determination system will be described. Figure 3 is a functional block diagram showing the configuration of the authenticity determination system 6. The authenticity determination system 6 comprises an authenticity data generation device 9, a server 10, and an authenticity determination device 11. All of these are implemented by a computer.

[0075] The genuine product data generation device 9 is a device that generates genuine product data. The genuine product data generation device 9 has a genuine product data generation unit 17. The genuine product data generation unit 17 is realized, for example, by the execution of a genuine product data generation program stored in a storage device such as a ROM by an arithmetic unit such as a CPU.

[0076] Server 10 is configured to store genuine product data. Server 10 is connected to the genuine product data generation device 9 and the genuineness determination device 11 so as to be able to communicate with them.

[0077] The authenticity determination device 11 is configured to determine the authenticity of an item to be determined. The authenticity determination device 11 includes a data generation unit 14 and a verification unit 15. These are realized when an authenticity determination program stored in a storage device is executed by a computing unit.

[0078] The above describes the configuration of the authenticity determination system 6. Next, we will explain the method for determining authenticity. (Step S1: Generating authentic product data) For authenticity determination, genuine product data is generated in advance. Specifically, a genuine semiconductor device is first provided. Then, the anti-counterfeiting layer of the genuine device is imaged by an imaging device 8 equipped with an optical microscope. The obtained image data is sent from the imaging device 8 to the genuine product data generation device 9. In the genuine product data generation device 9, the genuine product data generation unit 17 generates genuine product data based on the acquired image data. The genuine product data is data that indicates the pattern used for authenticity determination of genuine products.

[0079] Specifically, the genuine product data generation unit 17 generates data indicating the position of bright spots originating from pattern-forming particles as genuine product data. In addition to the position of the bright spots, the genuine product data may also include information indicating the color and brightness of the bright spots. If the pattern-forming particles include multiple particles that emit different colors, the information indicating the color of the bright spots may include information indicating the different colors of the bright spots. Furthermore, the genuine product data generation unit 17 may generate the image data obtained from the imaging device 8 as genuine product data, or it may generate genuine product data by extracting information about bright spots from the image data for purposes such as capacity compression. For example, information about bright spots may be extracted by analyzing the image data using a computer or the like. The generated genuine product data is sent from the genuine product data generation device 9 to the server 10 and stored.

[0080] Furthermore, imaging of genuine products may be performed after the manufacturing of genuine products, or it may be performed during the manufacturing process. In other words, genuine semiconductor devices may be semi-finished products. For example, if there is no change in the appearance of the anti-counterfeiting layer before and after curing, the anti-counterfeiting layer may be imaged before curing. (Step S2: Judgment) When determining the authenticity of an item, the anti-counterfeiting layer of the item is observed using an imaging device 12 equipped with an optical microscope, and image data is obtained. The obtained image data is then acquired by the data generation unit 14 of the authenticity determination device 11. The data generation unit 14 generates data based on the acquired image data. The data is data that indicates the pattern used for determining the authenticity of the item. Similar to genuine product data, the image data itself may be treated as the data to be determined, or the data after processing such as image analysis may be treated as the data to be determined.

[0081] Furthermore, in the authenticity determination device 11, the matching unit 15 accesses the server 10 via a network or the like to acquire genuine product data. The matching unit 15 then compares the genuine product data with the data to be determined generated by the data to be determined generation unit 14 and determines whether the patterns match. For example, the matching unit 15 calculates the similarity between the genuine product data and the data to be determined using the mean squared error (MSE), and determines whether the data to be determined matches the genuine product data based on the magnitude of the calculated similarity. The matching unit 15 then outputs the determination result via an output device (not shown).

[0082] The above is an overview of the authenticity determination method according to this embodiment.

[0083] Furthermore, when imaging genuine products and products subject to evaluation, illumination light is shone onto the anti-counterfeiting layer. The manner of illumination in this case is not particularly limited. For example, it may be side illumination, direct illumination, or a combination of both.

[0084] Furthermore, when imaging genuine products and products subject to judgment, it is preferable to acquire images at a magnification of, for example, 300 to 3000 times.

[0085] Furthermore, the size of the area used for comparing genuine products and products under evaluation is not particularly limited. For example, the comparison can be performed using data from an area with sides of 10 μm or larger. Preferably, the comparison is performed using data from a rectangular area with sides of 10 μm to 1000 μm.

[0086] Furthermore, in this embodiment, the case in which the determination process (step S2) is performed by the authenticity determination device 11 has been described. However, the determination process (step S2) may also be performed by visual inspection. That is, the anti-counterfeiting layer of the item to be determined may be observed with an optical microscope, and the authenticity determination pattern of the item to be determined may be visually compared with the authenticity determination pattern of a genuine product. [Examples]

[0087] Next, in order to explain the present invention in more detail, examples implemented by the inventors will be described. However, the present invention should not be interpreted as being limited to the following examples. (Prototype A) <Manufacturing of protective layer-forming films> (Preparation of a composition for forming a protective layer) A protective layer-forming composition was prepared by mixing the following raw materials with a methyl ethyl ketone solvent and stirring at 23°C for 60 minutes, with an active ingredient (components other than the solvent) content of 52% by mass. In the following description, the amounts of each component refer to the amount of the active ingredient. (1) Acrylic polymer (20 parts by mass): Acrylic polymer obtained by copolymerizing 15 parts by mass of n-butyl acrylate, 10 parts by mass of methyl methacrylate, 60 parts by mass of methyl acrylate, and 15 parts by mass of 2-hydroxyethyl acrylate (weight-average molecular weight: 600,000) (2) Bisphenol A type liquid epoxy resin (15 parts by mass): Nippon Shokubai Co., Ltd. "BPA328" (3) Bisphenol A type epoxy resin (1.8 parts by mass): Mitsubishi Chemical Corporation "jER1055" (4) Dicyandiamide (0.45 parts by mass): Thermally activated latent epoxy resin curing agent, ADEKA "ADEKA Hardener EH-3636AS" (5) 2-phenyl-4,5-dihydroxymethylimidazole (0.45 parts by mass), manufactured by Shikoku Chemicals Co., Ltd., "Curesol 2PHZ" (6) Spherical silica filler (60 parts by mass): Admatex Co., Ltd. "SC105G-MMQ: Spherical Silica" (average particle size 0.3 μm) (7) Silane coupling agent: 3-Glycidoxypropyltrimethoxysilane (3-Glycidyloxypropyltrimethoxysilane) (0.4 parts by mass), Shin-Etsu Chemical Co., Ltd. "KBM403" (8) Coloring agent: Carbon black (1.9 parts by mass), Mitsubishi Chemical Corporation "MA600B" (average particle size 28 nm) (Formation of protective layer film) A release film having a release surface was prepared. The protective layer-forming composition prepared above was then coated onto the release surface using a knife coater. After coating, it was dried at 110°C for 2 minutes. The thickness of the protective layer-forming composition after drying was 25 μm. Furthermore, the release surface of another release film was laminated onto this protective layer-forming composition to create a protective layer-forming film sandwiched between two release films. (Manufacturing of silicon chips with a protective film on the back) A 6-inch silicon wafer (100 μm thick) with a #2000 polished surface was prepared as a semiconductor substrate. One release film was peeled off from the protective layer forming film, and the exposed protective layer forming composition was applied to the silicon wafer. The other release film remaining on the protective layer forming film was then peeled off and removed. Next, the silicon wafer was heat-treated at 130°C for 2 hours to cure the protective layer forming composition and form a protective layer (backside protective film) on the silicon wafer. (Preparation of anti-counterfeiting layer composition) On the other hand, a composition for an anti-counterfeiting layer was prepared. Specifically, 91 parts by mass of polyester acrylate (Arkema Corporation CN2270NS), 0.1 parts by mass of Si (silicon) nanofiller (average particle size 0.8 μm), 4.6 parts by mass of photoinitiator (IGM Resins, Omnirad 127D), and 4.6 parts by mass of silane coupling agent (Shin-Etsu Chemical Co., Ltd. KBM-1083) were mixed to prepare the composition for an anti-counterfeiting layer.

[0088] Furthermore, the particle size distribution of Si (silicon) nanofillers was measured using a laser diffraction particle size distribution analyzer (Mastersizer 3000 (Malvern Panalytical)), and the graph shown in Figure 4 was obtained. In the graph shown in Figure 4, the horizontal axis represents the diameter of the filler (μm), and the vertical axis represents the abundance (%). As shown in Figure 4, a particle size distribution with two peaks was obtained. The integrated abundance in the 90-300 nm range was 34%. The integrated abundance in the 800-1200 nm range was 27.8%.

[0089] The prepared anti-counterfeiting layer composition was applied to the surface of the exposed back protective film using a YOSHIMITSU SEIKI YBA-type baker applicator. The composition was then cured by UV irradiation under the following conditions to obtain an anti-counterfeiting layer with a thickness of 5 μm.

[0090] Equipment: UV irradiation machine (GS Yuasa Corporation, CSN2-40) Conditions: N2 purge present, UV irradiance 360 ​​mJ / cm² 2 Irradiation speed 7 m / min, oxygen concentration 0.3% or less. Following the above procedure, a silicon wafer for prototype A was obtained. This was attached to Lintec's Adwill D-485H adhesive sheet for semiconductor processing, and then cut into 10mm x 10mm squares using a dicer (DISCO DFD6362) to obtain individual pieces, resulting in a semiconductor chip with an anti-counterfeiting layer that mimics a semiconductor device, for prototype A. (Prototype B) By extracting a chip different from prototype A from the silicon wafer used to obtain prototype A, a semiconductor chip with an anti-counterfeiting layer related to prototype B was obtained. (evaluation) The anti-counterfeiting layer of prototype A was imaged using a digital microscope (Keyence Digital Microscope VHX-7000) with omnidirectional side illumination (full ring illumination), and image data A1 was obtained. The optical magnification was 500x. After a period of time, the anti-counterfeiting layer of prototype A was imaged again, and image data A2 was obtained. Furthermore, after intentionally rotating prototype A by 20°, the anti-counterfeiting layer was imaged again, and image data A3 was obtained. In addition, the anti-counterfeiting layer of prototype B was imaged under the same conditions as prototype A, and image data B1 was obtained. It was observed that in all image data, multiple bright spots emitted different colors.

[0091] For image data A1, information including the color, brightness, and position of bright spots was extracted to obtain feature data a1. Similar data processing was performed on image data A2, A3, and B1 to obtain feature data a2, a3, and b1, respectively. The similarity of feature data a2, a3, and b1 to feature data a1 was then evaluated by calculating the mean squared error (MSE). The calculation area was approximately 400 μm square.

[0092] The results of the mean squared error (MSE) are shown in Table 1. As shown in Table 1, image data A2 and A3 clearly had smaller mean squared errors (MSE) than image data B1. In other words, they were more similar. Therefore, it can be seen that by setting an appropriate threshold value (e.g., "1"), it is possible to distinguish between genuine products and counterfeit products (another prototype made using the exact same procedure as the genuine product).

[0093] [Table 1]

[0094] [Note] A typical configuration of this embodiment is summarized below as an appendix. (Note 1) A composition for forming an anti-counterfeiting layer on a protective layer provided on a semiconductor substrate, comprising pattern-forming particles made of an inorganic material with a refractive index n of 3 or more. (Note 2) The anti-counterfeiting layer composition according to Appendix 1, wherein the pattern-forming particles are particles configured to generate scattered light by Mie resonance. (Appendix 3) A semiconductor device comprising a semiconductor substrate, a protective layer formed on the semiconductor substrate, and an anti-counterfeiting layer formed on the protective layer, wherein the anti-counterfeiting layer contains pattern-forming particles made of an inorganic material with a refractive index n of 3 or more. (Note 4) A method for manufacturing a semiconductor device, comprising the steps of: forming a protective layer on a semiconductor substrate; forming an anti-counterfeiting layer on the protective layer, the layer comprising pattern-forming particles formed of an inorganic material with a refractive index n of 3 or more; wherein the step of forming the protective layer comprises the steps of supplying a protective layer-forming composition onto the semiconductor substrate and curing the supplied protective layer-forming composition; and the step of forming the anti-counterfeiting layer comprises the steps of supplying an anti-counterfeiting layer composition and curing the supplied anti-counterfeiting layer composition. (Note 5) The manufacturing method described in Appendix 4, wherein the semiconductor substrate is a wafer for a face-down type semiconductor chip, and the protective layer is formed on the back surface of the wafer. (Note 6) The manufacturing method according to Appendix 4 or 5, wherein both the protective layer-forming composition and the anti-counterfeiting layer composition are thermosetting compositions, and the steps of curing the anti-counterfeiting layer composition and curing the protective layer-forming composition are performed simultaneously. (Note 7) The manufacturing method according to Appendix 4 or 5, wherein both the protective layer-forming composition and the anti-counterfeiting layer composition are energy-ray curable compositions, and the steps of curing the anti-counterfeiting layer composition and curing the protective layer-forming composition are performed simultaneously. (Note 8) A method for determining the authenticity of a semiconductor device, comprising: a step of providing a genuine semiconductor device as described in Appendix 3; a step of generating genuine data, which involves imaging the anti-counterfeiting layer of the genuine device and generating genuine data indicating authenticity determination formed by the pattern-forming particles; and a determination step of determining whether or not the item to be determined is genuine by comparing the authenticity determination pattern of the item to be determined with the genuine data. (Note 9) A method for determining authenticity of a semiconductor device as described in Appendix 8, wherein the authenticity data includes information indicating the position and color of bright spots formed by the pattern-forming particles as the authenticity determination pattern. (Note 10) Authenticity determination system for a semiconductor device, comprising: an authenticity data generation unit that generates authenticity data showing an authenticity determination pattern formed by the pattern-forming particles based on image data of the anti-counterfeiting layer of a genuine semiconductor device as described in Appendix 3; a determination target data generation unit that generates determination target data showing an authenticity determination pattern formed by the pattern-forming particles based on image data of the anti-counterfeiting layer of a target product; and a comparison unit that compares the authenticity data with the determination target data to determine whether or not the target product is genuine. (Incorporated by reference) This application claims priority under Japanese Patent Application (Application No. 2024-037376), and the contents of that application are incorporated into this application by reference.

Claims

1. A composition for forming an anti-counterfeiting layer on a protective layer provided on a semiconductor substrate, It contains pattern-forming particles made of an inorganic material with a refractive index n of 3 or higher. Composition for anti-counterfeiting layer.

2. The pattern-forming particles are particles configured to generate scattered light through Mie resonance. The anti-counterfeiting layer composition according to claim 1.

3. Semiconductor substrate and A protective layer formed on the semiconductor substrate, A counterfeit prevention layer formed on the protective layer, Equipped with, The anti-counterfeiting layer contains pattern-forming particles made of an inorganic material with a refractive index n of 3 or more. Semiconductor equipment.

4. A process of forming a protective layer on a semiconductor substrate, A step of forming an anti-counterfeiting layer on the protective layer, which includes pattern-forming particles made of an inorganic material with a refractive index n of 3 or more. Includes, The step of forming the protective layer is: A step of supplying a protective layer forming composition onto the semiconductor substrate, The step includes curing the supplied protective layer-forming composition, The step of forming the aforementioned anti-counterfeiting layer is: A process of supplying a composition for the anti-counterfeiting layer, The process includes curing the supplied anti-counterfeiting layer composition, A method for manufacturing a semiconductor device.

5. The aforementioned semiconductor substrate is a wafer for a face-down type semiconductor chip. The protective layer is formed on the back surface of the wafer. The manufacturing method according to claim 4.

6. The aforementioned protective layer-forming composition and the aforementioned anti-counterfeiting layer composition are both thermosetting compositions. The steps of curing the anti-counterfeiting layer composition and curing the protective layer forming composition are performed simultaneously. The manufacturing method according to claim 4.

7. The aforementioned protective layer-forming composition and the aforementioned anti-counterfeiting layer composition are both energy ray-curable compositions. The steps of curing the anti-counterfeiting layer composition and curing the protective layer forming composition are performed simultaneously. The manufacturing method according to claim 4.

8. A step of providing a genuine semiconductor device according to claim 3, A genuine product data generation step involves imaging the anti-counterfeiting layer of the semiconductor device and generating genuine product data indicating authenticity for counterfeit determination formed by the pattern-forming particles, A determination step in which the authenticity determination pattern of the item to be determined is compared with the authenticity data to determine whether the item to be determined is genuine or not, Equipped with, Methods for determining the authenticity of semiconductor devices.

9. A method for determining authenticity according to claim 8, The authenticity data includes information indicating the position and color of the bright spots formed by the pattern-forming particles, as the authenticity determination pattern. Methods for determining the authenticity of semiconductor devices.

10. A genuine product data generation unit generates genuine product data indicating a genuine / counterfeit determination pattern formed by the pattern-forming particles, based on image data of the anti-counterfeiting layer of a genuine semiconductor device according to claim 3. A determination target data generation unit generates determination target data that indicates the authenticity determination pattern formed by the pattern-forming particles based on image data of the anti-counterfeiting layer of the item to be judged, A comparison unit that compares the genuine product data with the data to be determined and determines whether or not the item to be determined is genuine, Equipped with, A system for determining the authenticity of semiconductor devices.

11. A genuine product data generation device, comprising the genuine product data generation unit, used in the genuine product determination system described in claim 10.

12. A genuineness determination device, comprising the determination target data generation unit and the verification unit, used in the genuineness determination system described in claim 10.

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