Resin composition, cured product, electronic component, and display device

Abstract

A resin composition containing (A) a soluble resin, (B) an organic salt, and (C) a solvent, wherein the (B) organic salt is formed from a carboxy-group-containing organic compound and an amino-group-containing organic compound, and the (B) organic salt is 0.01-10 parts by mass per 100 parts by mass of the (A) soluble resin.　Provided is a resin composition having exceptional substrate adhesion and exceptional storage stability.

Description

Resin composition, cured product, electronic component, and display device

[0001] The present invention relates to a resin composition containing a soluble resin, an organic salt, and a solvent, a cured product obtained by curing the resin composition, an electronic component including the cured product, and a display device including the cured product.

[0002] Polyimide-based materials and polybenzoxazole-based materials, which have excellent heat resistance, electrical insulation, and mechanical properties, are widely used for surface protection films and interlayer insulating films of electronic components. In the manufacturing process of electronic components, a metal layer may be formed on an insulating film. However, if the adhesion between the two is insufficient, peeling occurs at the interface, resulting in poor reliability of the electronic components. Therefore, materials used for insulating films must have excellent adhesion to the metal layer, and during evaluation at the development stage, they must also have excellent adhesion to the metal substrate.

[0003] To address this issue, resin compositions containing additives such as basic nitrogen-containing compounds and thiol derivatives have been disclosed (see Patent Documents 1 to 3).

[0004] Furthermore, in order to satisfy the demand for microfabrication necessary for the high integration of electronic components, a resin composition that contains a photosensitizer and can be patterned using a photolithography method may be used for the insulating film. In this case, a resin composition that can be patterned into a fine pattern of about several μm to several tens of μm is preferably used.

[0005] JP 2007-39486 A JP 2003-5369 A International Publication No. 2014 / 115233

[0006] The resin compositions described in Patent Documents 1 and 3 have problems with storage stability because the resin reaction is accelerated and the viscosity increases when stored at room temperature, and the resin composition described in Patent Document 2 has poor compatibility between the resin and additives.

[0007] Therefore, an object of the present invention is to provide a resin composition that has excellent adhesion to substrates and excellent storage stability.

[0008] In order to solve the above problems, the present invention has the following configurations: [1] A resin composition containing (A) a soluble resin, (B) an organic salt, and (C) a solvent, wherein the (B) organic salt is an organic salt formed from an organic compound having a carboxy group and an organic compound having an amino group, and the (B) organic salt is 0.01 to 10 parts by mass per 100 parts by mass of the (A) soluble resin. [2] The resin composition according to [1], wherein the (B) organic salt contains an organic salt having a structure represented by formula (6) or formula (7).

[0009]

[0010] (In formula (6), R １４ represents a tetravalent organic group having 4 to 40 carbon atoms. １５ represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms. １６ represents a divalent organic group having 1 to 40 carbon atoms. １７ represents a divalent organic group having 1 to 40 carbon atoms. １７ does not contain a carboxy group or a carboxylic acid ester group. １８ represents a divalent organic group having 1 to 40 carbon atoms.) [3] The resin composition according to [1] or [2], wherein the soluble resin (A) contains at least one soluble resin selected from the group consisting of polyimide, polybenzoxazole, precursors thereof, and copolymers thereof. [4] The resin composition according to any one of [1] to [3], further containing (D) a photosensitizer. [5] The resin composition according to any one of [1] to [4], wherein the soluble resin (A) contains at least one soluble resin selected from the group consisting of a polyimide having a structure represented by formula (1), a polybenzoxazole having a structure represented by formula (3), a polyimide precursor having a structure represented by formula (4) in which g in formula (4) is 2, a polybenzoxazole precursor having a structure represented by formula (4) in which g in formula (4) is 0, and copolymers thereof.

[0011]

[0012] (In formula (1), R １ represents a tetravalent organic group having 4 to 40 carbon atoms. ２represents a structure represented by formula (2). ３ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ -, and R ４ and R ５ represents a monovalent organic group having 1 to 20 carbon atoms. a and b each independently represent an integer of 1 to 4, and c and d each independently represent an integer of 0 to 1. * represents a chemical bond.

[0013]

[0014] (In formula (3), R ６ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ It is represented by -. ７ represents a divalent organic group having 4 to 40 carbon atoms.

[0015]

[0016] (In formula (4), R ８ represents a divalent to tetravalent organic group having 4 to 40 carbon atoms. ９ represents a structure represented by formula (5). １０ represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. g represents 0 or 2. １１ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ -, and R １２ and R １３ represents a monovalent organic group having 1 to 20 carbon atoms. k and l each independently represent an integer of 1 to 4, and m and n each independently represent an integer of 0 to 1. * represents a chemical bond.) [6] R in the formula (6) １６ and R in the formula (7) １８ The resin composition according to any one of [1] to [5], wherein the structure is represented by formula (8):

[0017]

[0018] (In formula (8), R １９ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ -, and R ２０ and R ２１ represents a monovalent organic group having 1 to 20 carbon atoms. o and p each independently represent an integer of 1 to 4, and q and r each independently represent an integer of 0 to 1. * represents a chemical bond.) [7] R in the formula (8) １９ But -C(CF ３ ) ２ [8] A cured product obtained by curing the resin composition according to any one of [1] to [7]. [9] An electronic component comprising the cured product according to [8].

[10] A display device comprising the cured product according to [8].

[0019] The present invention provides a resin composition that has excellent substrate adhesion and excellent storage stability, and further, in an embodiment that contains a photosensitizer, provides a resin composition that has fine pattern processability.

[0020] The present invention will be described in detail below.

[0021] <(A) Soluble Resin> The resin composition of the present invention contains (A) a soluble resin. The soluble resin in the present invention refers to a resin that dissolves in an amount of 0.1 g or more in 100 g of an organic solvent or an alkaline aqueous solution at 25°C.

[0022] Examples of the organic solvent include γ-butyrolactone, γ-valerolactone, δ-valerolactone, dimethyl sulfoxide, tetrahydrofuran, dioxane, propylene glycol monomethyl ether, propylene glycol monoethyl ether, acetone, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl acetate, butyl acetate, isobutyl acetate, propyl acetate, propylene glycol monomethyl ether acetate, 3-methyl-3-methoxybutyl acetate, methyl lactate, ethyl lactate, diacetone alcohol, 3-methyl-3-methoxybutanol, toluene, xylene, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, 1,3-dimethyl-2-imidazolidinone, N,N'-dimethylpropylene urea, 1,3-dimethylisobutyramide, methoxy-N,N-dimethylpropionamide, butoxy-N,N-dimethylpropionamide, and the like.

[0023] Examples of the alkaline aqueous solution include aqueous solutions of tetramethylammonium hydroxide (TMAH), diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine.

[0024] Examples of the soluble resin (A) include polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamide, polyamideimide, phenolic resin, acrylic resin, polyurea, polyester, polysiloxane, etc. Two or more of these resins may be contained. Among these, it is preferable to contain at least one soluble resin selected from the group consisting of polyimide, polybenzoxazole, precursors thereof, and copolymers thereof, in terms of excellent heat resistance, strength, and substrate adhesion.

[0025] Polyimides and polybenzoxazoles are resins that have a cyclic structure of an imide ring or an oxazole ring within the main chain structure, and their precursors, polyimide precursors and polybenzoxazole precursors, are resins that form an imide ring or a benzoxazole ring structure by dehydration ring closure.

[0026] Polyimides can be obtained by reacting tetracarboxylic acids, corresponding tetracarboxylic dianhydrides, tetracarboxylic diester dichlorides, etc. with diamines, corresponding diisocyanate compounds, trimethylsilylated diamines, etc., and contain organic groups derived from the tetracarboxylic acid and organic groups derived from the diamine. For example, polyimides can be obtained by heat-treating polyamic acid, a polyimide precursor obtained by reacting tetracarboxylic dianhydrides with diamines, to dehydrate and ring-close the polyimide. During this heat-treating process, a solvent that forms an azeotrope with water, such as m-xylene, may be added. Alternatively, polyimides can be obtained by adding a dehydration condensation agent, such as a carboxylic anhydride or dicyclohexylcarbodiimide, or a ring-closing catalyst, such as a base, such as triethylamine, and then subjecting the mixture to dehydration and ring-closure through chemical heat treatment. Alternatively, polyimides can be obtained by adding a weakly acidic carboxylic acid compound and then subjecting the mixture to dehydration and ring-closure through heat treatment at a low temperature of 100°C or less.

[0027] Polybenzoxazole is obtained by reacting a bisaminophenol compound with a dicarboxylic acid, a corresponding dicarboxylic acid chloride, a dicarboxylic acid activated ester, or the like, and has an organic group derived from the dicarboxylic acid and an organic group derived from the bisaminophenol. For example, it can be obtained by dehydrating and cyclizing polyhydroxyamide, a polybenzoxazole precursor obtained by reacting a bisaminophenol compound with a dicarboxylic acid, through a heat treatment. Alternatively, it can be obtained by adding phosphoric anhydride, a base, a carbodiimide compound, or the like and then dehydrating and cyclizing the polybenzoxazole through a chemical treatment.

[0028] The soluble resin (A) preferably contains at least one soluble resin selected from the group consisting of a polyimide having a structure represented by formula (1), a polybenzoxazole having a structure represented by formula (3), a polyimide precursor having a structure represented by formula (4) in which g is 2, a polybenzoxazole precursor having a structure represented by formula (4) in which g is 0, and copolymers thereof. By containing at least one soluble resin selected from the group consisting of a polyimide having a structure represented by formula (1), a polybenzoxazole having a structure represented by formula (3), a polyimide precursor having a structure represented by formula (4) in which g is 2, a polybenzoxazole precursor having a structure represented by formula (4) in which g is 0, and copolymers thereof, the resin composition has excellent heat resistance, strength, and substrate adhesion, and its dissolution rate in an alkaline aqueous solution as a developer is increased, and the difference in the dissolution rate of the cured portion of the resin composition coating film in the developer and the uncured portion in the developer (hereinafter referred to as dissolution contrast) is increased, resulting in fine pattern processability.

[0029]

[0030] (In formula (1), R １ represents a tetravalent organic group having 4 to 40 carbon atoms. ２ represents a structure represented by formula (2). ３ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ -, and R ４ and R ５ represents a monovalent organic group having 1 to 20 carbon atoms. a and b each independently represent an integer of 1 to 4, and c and d each independently represent an integer of 0 to 1. * represents a chemical bond.

[0031]

[0032] (In formula (3), R ６ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２It is represented by -. ７ represents a divalent organic group having 4 to 40 carbon atoms.

[0033]

[0034] (In formula (4), R ８ represents a divalent to tetravalent organic group having 4 to 40 carbon atoms. ９ represents a structure represented by formula (5). １０ represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. g represents 0 or 2. １１ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ -, and R １２ and R １３ represents a monovalent organic group having 1 to 20 carbon atoms. k and l each independently represent an integer of 1 to 4, and m and n each independently represent an integer of 0 to 1. * represents a chemical bond.) R in formula (1) １is an organic group derived from a tetravalent carboxylic acid having 4 to 40 carbon atoms or a derivative thereof, and is preferably an organic group derived from a tetracarboxylic acid dianhydride. Examples of tetracarboxylic acid dianhydrides include pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic acid dianhydride, 2,3,3',4'-biphenyltetracarboxylic acid dianhydride, 2,2',3,3'-biphenyltetracarboxylic acid dianhydride, 3,3',4,4'-benzophenonetetracarboxylic acid dianhydride, 2,2',3,3'-benzophenonetetracarboxylic acid dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, and 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride. Dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride, 4,4'-oxydiphthalic anhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 9,9-bis(3,4-dicarboxyphenyl)fluorene dianhydride, 9,9-bis{4-( aromatic tetracarboxylic acid dianhydrides such as 2,3,6,7-naphthalenetetracarboxylic acid dianhydride, 2,3,5,6-pyridinetetracarboxylic acid dianhydride, 3,4,9,10-perylenetetracarboxylic acid dianhydride, and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride; 3,3',4,4'-diphenylsulfonetetracarboxylic acid dianhydride; 1,2,3,4-cyclobutanetetracarboxylic acid dianhydride; 4-Cyclopentanetetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, 5-(2,5-dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, 2,3,5-tricarboxy-2-cyclopentaneacetic dianhydride, 2,3,4,5-tetrahydrofurantetracarboxylic dianhydride, 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic dianhydride, 4-(2,Examples of the tetracarboxylic acid dianhydride include 4-(2,5-dioxotetrahydrofuran-3-yl)-4-methyl-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid dianhydride, 4-(2,5-dioxotetrahydrofuran-3-yl)-7-methyl-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid dianhydride, norbornane-2-spiro-2'-cyclopentanone-5'-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic acid dianhydride, and norbornane-2-spiro-2'-cyclohexanone-6'-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic acid dianhydride, as well as compounds in which some of the hydrogen atoms in these aromatic rings or hydrocarbons have been substituted with alkyl groups or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, or the like. Two or more of these tetracarboxylic acid dianhydrides may also be used in combination.

[0035] R in formula (1) ２is a structure represented by formula (2), and examples of diamines having a structure represented by formula (2) include bis(3-amino-4-hydroxyphenyl)ether, bis(3-amino-4-hydroxyphenyl)methylene, bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]sulfone, bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]sulfone, bis(3-amino-4-hydroxyphenyl)sulfone, and bis(3-amino-4-hydroxyphenyl) ) propane, 2,2'-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 2,2'-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 9,9-bis(3-amino-4-hydroxyphenyl)fluorene, 9,9-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, 9,9-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene , N,N'-bis(3-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-4,4'-diamino-3,3-dihydroxybiphenyl, N,N'-bis(3-aminobenzoyl)-3,3'-diamino-4,4-dihydroxybiphenyl, N,N'-bis(4-aminobenzoyl)-3,3'-diamino-4,4-dihydroxybiphenyl Examples of diamines include bis(3-amino-4-hydroxyphenyl)methane, 1,1-bis(3-amino-4-hydroxyphenyl)ethane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, and compounds in which some of the hydrogen atoms in these aromatic rings or hydrocarbons have been substituted with alkyl groups or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc. Two or more diamines having the structure represented by formula (2) may also be used in combination.

[0036] R in formula (3) ６ is a single bond, -O-, -C(CH ３) ２ -, -C(CF ３ ) ２ It is expressed as -.

[0037] R in formula (3) ７ represents a divalent organic group having 4 to 40 carbon atoms. ７ is an organic group derived from a dicarboxylic acid having 4 to 40 carbon atoms or a derivative thereof, and is preferably an organic group derived from a dicarboxylic acid.

[0038] Dicarboxylic acids include phthalic acid, isophthalic acid, terephthalic acid, 2,2'-biphenyldicarboxylic acid, 3,4'-biphenyldicarboxylic acid, 4,4'-biphenyldicarboxylic acid, benzophenone-2,4'-dicarboxylic acid, benzophenone-4,4'-dicarboxylic acid, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 3,3'-dicarboxydiphenyl ether, 3,4'-dicarboxydiphenyl ether, and 4,4'-dicarboxydiphenyl ether. 3,3'-dicarboxydiphenylmethane, 3,4'-dicarboxydiphenylmethane, 4,4'-dicarboxydiphenylmethane, 3,3'-dicarboxydiphenyldifluoromethane, 3,4'-dicarboxydiphenyldifluoromethane, 4,4'-dicarboxydiphenyldifluoromethane, 3,3'-dicarboxydiphenylsulfone, 3,4'-dicarboxydiphenylsulfone, 4,4'-dicarboxydiphenylsulfone, 3,3'-dicarboxydiphenyl Nyl sulfide, 3,4'-dicarboxydiphenyl sulfide, 4,4'-dicarboxydiphenyl sulfide, 3,3'-dicarboxydiphenyl ketone, 3,4'-dicarboxydiphenyl ketone, 4,4'-dicarboxydiphenyl ketone, 2,2-bis(3-carboxyphenyl)propane, 2,2-bis(3,4'-dicarboxyphenyl)propane, 2,2-bis(4-carboxyphenyl)propane, 2,2-bis(3-carboxyphenyl)hexafluoro Examples include propane, 2,2-bis(3,4'-carboxyphenyl)hexafluoropropane, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 1,3-bis(3-carboxyphenoxy)benzene, 1,4-bis(3-carboxyphenoxy)benzene, 1,3-bis(4-carboxyphenoxy)benzene, and compounds in which some of the hydrogen atoms in these aromatic rings or hydrocarbons have been substituted with alkyl or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc. Furthermore, two or more of these dicarboxylic acids may be used in combination.

[0039] R in formula (4) ８ represents a divalent to tetravalent organic group having 4 to 40 carbon atoms. ８When g is 0, is an organic group derived from a dicarboxylic acid having 4 to 40 carbon atoms or a derivative thereof, and is preferably an organic group derived from a dicarboxylic acid.

[0040] The dicarboxylic acid is R ７ The same can be mentioned.

[0041] R in formula (4) ８ When g is 2, is an organic group derived from a tetravalent carboxylic acid having 4 to 40 carbon atoms or a derivative thereof, and is preferably an organic group derived from a tetracarboxylic dianhydride.

[0042] The tetracarboxylic dianhydride may be a compound represented by the formula (1) R １ The same can be mentioned.

[0043] R in formula (4) ９ is a structure represented by formula (5), and examples of diamines having a structure represented by formula (5) include those similar to those having a structure represented by formula (2).

[0044] The soluble resin (A) is preferably end-capped with one or more of a monoamine, an acid anhydride, an acid chloride, and a monocarboxylic acid, which provides excellent storage stability to the resin composition.

[0045] When the terminals are blocked with a monoamine, the amount of monoamine is preferably in the range of 0.1 to 60 mol % of the total amine components, more preferably 5 to 50 mol %. A content of 5 mol % or more is preferred in that excellent storage stability is achieved, and a content of 50 mol % or less is preferred in that a sufficient weight average molecular weight can be achieved.

[0046] Examples of monoamines include 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, etc. Two or more of these monoamines may be used in combination.

[0047] When the terminals are blocked with an acid anhydride, an acid chloride, or a monocarboxylic acid, the amount of each compound is preferably in the range of 0.1 to 60 mol %, more preferably 5 to 50 mol %, based on the total acid components. A content of 5 mol % or more is preferred in that excellent storage stability is achieved, and a content of 50 mol % or less is preferred in that a sufficient weight-average molecular weight can be achieved.

[0048] Examples of acid anhydrides, acid chlorides, and monocarboxylic acids include acid anhydrides such as phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride, and 3-hydroxyphthalic anhydride, 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxynaphthalene, and 1-mercapto-5-carboxynaphthalene. and monoacid chloride compounds in which only one carboxy group of dicarboxylic acids such as terephthalic acid, phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene, and 2,6-dicarboxynaphthalene is acid chlorided, and activated ester compounds obtained by reacting a monoacid chloride compound with N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2,3-dicarboximide. Two or more of these acid anhydrides, acid chlorides, and monocarboxylic acids may be used in combination.

[0049] The weight-average molecular weight of the soluble resin (A) is preferably 1,000 to 200,000, more preferably 5,000 to 100,000, and even more preferably 10,000 to 50,000. Having a weight-average molecular weight within the above range ensures fine pattern processability, heat resistance, and strength. The weight-average molecular weight is measured by gel permeation chromatography (GPC) and calculated in terms of polystyrene.

[0050] <(B) Organic Salt> The resin composition of the present invention contains (B) an organic salt. In the present invention, the organic salt refers to a salt formed from an organic compound having an acidic functional group and an organic compound having a basic functional group. Examples of the acidic functional group include a carboxy group, a sulfonic acid group, a phosphoric acid group, and a phenolic hydroxyl group. Examples of the basic functional group include an amino group, specifically a primary amino group and a secondary amino group.

[0051] The organic salt (B) preferably contains an organic salt having a structure represented by formula (6) or formula (7). When the organic salt (B) contains an organic salt having a structure represented by formula (6) or formula (7), the resin composition, the Si substrate, and the SiO ２ The adhesiveness to substrates such as a silicon substrate, a silicon nitride substrate, an aluminum substrate, a copper substrate, a titanium substrate, an ITO substrate, etc. can be further improved.

[0052]

[0053] (In formula (6), R １４ represents a tetravalent organic group having 4 to 40 carbon atoms. １５ represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms. １６ represents a divalent organic group having 1 to 40 carbon atoms. １７ represents a divalent organic group having 1 to 40 carbon atoms. １７ does not contain a carboxy group or a carboxylic acid ester group. １８ represents a divalent organic group having 1 to 40 carbon atoms. １４ is an organic group derived from a tetracarboxylic acid having 4 to 40 carbon atoms or a derivative thereof, and is preferably an organic group derived from a tetracarboxylic acid.

[0054] Examples of tetracarboxylic acids include pyromellitic acid, 3,3',4,4'-biphenyltetracarboxylic acid, 2,3,3',4'-biphenyltetracarboxylic acid, 2,2',3,3'-biphenyltetracarboxylic acid, 3,3',4,4'-benzophenonetetracarboxylic acid, 2,2',3,3'-benzophenonetetracarboxylic acid, 2,2-bis(3,4-dicarboxyphenyl)propane, 2,2-bis(2,3-dicarboxyphenyl)propane, 1,1-bis(3,4-dicarboxyphenyl)ethane, 1,1-bis(2,3-dicarboxyl)ethane, and 1,1-bis(2,3-dicarboxyl)ethane. Bis(diphenyl)ethane, bis(3,4-dicarboxyphenyl)methane, bis(2,3-dicarboxyphenyl)methane, bis(3,4-dicarboxyphenyl)sulfone, 4,4'-oxydiphthalic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 9,9-bis(3,4-dicarboxyphenyl)fluorene acid, 9,9-bis{4-(3,4-dicarboxyphenoxy)phenyl}fluorene acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,5,6-pyridinetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid aromatic tetracarboxylic acids such as 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane, 3,3',4,4'-diphenylsulfonetetracarboxylic acid, 1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid, 5-(2,5-dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic acid, 2,3,5-tricarboxy-2-cyclopentaneacetic acid, and 2,3,4,5-tetrahydrofuran. Tetracarboxylic acids, 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid, 4-(2,5-dioxotetrahydrofuran-3-yl)-4 methyl-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid, 4-(2,5-dioxotetrahydrofuran-3-yl)-7 methyl-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid, norbornane-2-spiro-2'-cyclopentanone-5'-spiro-2"-norbornane-5,5",6,Examples of suitable tetracarboxylic acids include norbornane-2-spiro-2'-cyclohexanone-6'-spiro-2'-norbornane-5,5',6,6'-tetracarboxylic acid, ... and compounds in which some of the hydrogen atoms in these aromatic rings or hydrocarbons have been substituted with alkyl groups or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, or the like. Two or more of these tetracarboxylic acids may also be used in combination.

[0055] R in formula (6) １６ is an organic group derived from a divalent diamine having 1 to 40 carbon atoms or a derivative thereof, and is preferably a divalent organic group obtained by removing two amino groups from a diamine.

[0056] Examples of diamines include 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 1,4-bis(4-aminophenoxy)benzene, benzine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, bis(4- bis(4-aminophenoxyphenyl)sulfone, bis(3-aminophenoxyphenyl)sulfone, bis(4-aminophenoxy)biphenyl, bis{4-(4-aminophenoxy)phenyl}ether, 1,4-bis(4-aminophenoxy)benzene, 2,2'-dimethyl-4,4'-diaminobiphenyl, 2,2'-diethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-diethyl-4,4'-diaminobiphenyl, 2,2',3,3'-tetramethyl-4,4'-diaminobiphenyl, 3,3 aromatic diamines such as 2,4,4'-tetramethyl-4,4'-diaminobiphenyl and 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, and compounds in which some of the hydrogen atoms in these aromatic rings or hydrocarbons have been substituted with alkyl groups or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, or the like; bis(3-amino-4-hydroxyphenyl)ether, bis(3-amino-4-hydroxyphenyl)methylene, bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]sulfone, bis[N-(4-aminobenzoyl) -3-amino-4-hydroxyphenyl]sulfone, bis(3-amino-4-hydroxyphenyl)sulfone, bis(3-amino-4-hydroxyphenyl)propane, 2,2'-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 2,2'-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 9,9-bis(3-amino-4-hydroxyphenyl)fluorene, 9,9-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, 9,9-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, N,N'-bis(3-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-4,4'-diamino-3,3-dihydroxybiphenyl, N,N'-bis(3-aminobenzoyl)-3,3'-diamino-4,4-dihydroxybiphenyl, N,N'-bis(4-aminobenzoyl )-3,3'-diamino-4,4-dihydroxybiphenyl, 3,3'-diamino-4,4'-biphenol, bis(3-amino-4-hydroxyphenyl)methane, 1,1-bis(3-amino-4-hydroxyphenyl)ethane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, and compounds in which some of the hydrogen atoms of these aromatic rings or hydrocarbons have been substituted with alkyl groups or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, or the like.

[0057] R in formula (7) １７ represents a divalent organic group having 1 to 40 carbon atoms. １７ is an organic group derived from a dicarboxylic acid having 1 to 40 carbon atoms or a derivative thereof, and is preferably an organic group derived from a dicarboxylic acid.

[0058] Dicarboxylic acids include phthalic acid, isophthalic acid, terephthalic acid, 2,2'-biphenyldicarboxylic acid, 3,4'-biphenyldicarboxylic acid, 4,4'-biphenyldicarboxylic acid, benzophenone-2,4'-dicarboxylic acid, benzophenone-4,4'-dicarboxylic acid, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 3,3'-dicarboxydiphenyl ether, 3,4'-dicarboxydiphenyl ether, and 4,4'-dicarboxydiphenyl ether. 3,3'-dicarboxydiphenylmethane, 3,4'-dicarboxydiphenylmethane, 4,4'-dicarboxydiphenylmethane, 3,3'-dicarboxydiphenyldifluoromethane, 3,4'-dicarboxydiphenyldifluoromethane, 4,4'-dicarboxydiphenyldifluoromethane, 3,3'-dicarboxydiphenylsulfone, 3,4'-dicarboxydiphenylsulfone, 4,4'-dicarboxydiphenylsulfone, 3,3'-dicarboxydiphenyl Nyl sulfide, 3,4'-dicarboxydiphenyl sulfide, 4,4'-dicarboxydiphenyl sulfide, 3,3'-dicarboxydiphenyl ketone, 3,4'-dicarboxydiphenyl ketone, 4,4'-dicarboxydiphenyl ketone, 2,2-bis(3-carboxyphenyl)propane, 2,2-bis(3,4'-dicarboxyphenyl)propane, 2,2-bis(4-carboxyphenyl)propane, 2,2-bis(3-carboxyphenyl)hexafluoro Examples include propane, 2,2-bis(3,4'-carboxyphenyl)hexafluoropropane, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 1,3-bis(3-carboxyphenoxy)benzene, 1,4-bis(3-carboxyphenoxy)benzene, 1,3-bis(4-carboxyphenoxy)benzene, and compounds in which some of the hydrogen atoms in these aromatic rings or hydrocarbons have been substituted with alkyl or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc. Furthermore, two or more of these dicarboxylic acids may be used in combination.

[0059] R in formula (7) １８is an organic group derived from a divalent diamine having 1 to 40 carbon atoms or a derivative thereof, and is preferably a divalent organic group obtained by removing two amino groups from a diamine.

[0060] As the diamine, R in formula (6) １６ The same can be mentioned.

[0061] R in formula (6) １６ , R in formula (7) １８ is preferably a structure represented by formula (8): The structure represented by formula (8) increases the dissolution rate in an alkaline aqueous solution serving as a developer, increases the dissolution contrast between the cured and uncured portions of the resin composition coating film, and facilitates obtaining fine pattern processability.

[0062]

[0063] (In formula (8), R １９ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ -, and R ２０ and R ２１represents a monovalent organic group having 1 to 20 carbon atoms. o and p each independently represent an integer of 1 to 4, and q and r each independently represent an integer of 0 to 1. * represents a chemical bond.) Diamines having a structure represented by formula (8) include bis(3-amino-4-hydroxyphenyl)ether, bis(3-amino-4-hydroxyphenyl)methylene, bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]sulfone, bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]sulfone, bis(3-amino-4-hydroxyphenyl)sulfone, bis(3-amino-4-hydroxyphenyl)propane, 2,2'- ... bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 2,2'-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 9,9-bis(3-amino-4-hydroxyphenyl)fluorene, 9,9-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, 9,9-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, N,N'-bis (3-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-4,4'-diamino-3,3-dihydroxybiphenyl, N,N'-bis(3-aminobenzoyl)-3,3'-diamino-4,4-dihydroxybiphenyl, N,N'-bis(4-aminobenzoyl)-3,3'-diamino-4,4-dihydroxybiphenyl Examples of such aromatic rings or hydrocarbons include 3,3'-diamino-4,4'-biphenol, bis(3-amino-4-hydroxyphenyl)methane, 1,1-bis(3-amino-4-hydroxyphenyl)ethane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, and compounds in which some of the hydrogen atoms in these aromatic rings or hydrocarbons have been substituted with alkyl groups or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, or the like.

[0064] R in formula (8) １９is -C(CF ３ ) ２ It is more preferable that R １９ -C(CF ３ ) ２ -, so R １９ is a single bond, -O-, -C(CH ３ ) ２ Compared to the case where - is used, the dissolution rate in the alkaline aqueous solution serving as the developer is increased, the dissolution contrast between the cured and uncured portions of the resin composition coating film is increased, and finer pattern processability is more easily obtained.

[0065] R in formula (8) １９ -C(CF ３ ) ２ Examples of diamines in which the substituent is - include 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane and compounds in which some of the hydrogen atoms in the aromatic rings or hydrocarbons of these diamines are substituted with alkyl groups or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, or the like.

[0066] The content of the (B) organic salt is 0.01 to 10 parts by mass, preferably 0.05 to 1 part by mass, per 100 parts by mass of the (A) soluble resin. If the content of the (B) organic salt is less than 0.01 part by mass, the fine pattern processability and substrate adhesion are poor. If the content of the (B) organic salt exceeds 10 parts by mass, the storage stability is poor.

[0067] Among the (B) organic salts, an organic salt having a structure represented by formula (6) can be obtained, for example, by stirring equimolar amounts of the tetracarboxylic acid and diamine in a solvent, and an organic salt having a structure represented by formula (7) can be obtained, for example, by stirring equimolar amounts of the dicarboxylic acid and diamine in a solvent.

[0068] Examples of the solvent include the organic solvents exemplified in the section <(A) Soluble Resin> or water, and water is more preferred from the viewpoint of reaction yield. The reaction temperature is preferably 0°C or higher and 150°C or lower, more preferably 10°C or higher and 120°C or lower, and particularly preferably 30°C or higher and 80°C or lower. When the reaction temperature is within the preferred range, the tetracarboxylic acid and the diamine react sufficiently to obtain the organic salt (B) having the structure represented by formula (6), thereby suppressing overreaction. Furthermore, the dicarboxylic acid and the diamine react sufficiently to obtain the organic salt (B) having the structure represented by formula (7), thereby suppressing overreaction. The reaction time is preferably 0.5 hours or higher and 30 hours or lower, more preferably 1 hour or higher and 20 hours or lower, and particularly preferably 2 hours or higher and 10 hours or lower. When the reaction time is within the preferred range, the tetracarboxylic acid and the diamine react sufficiently to obtain the organic salt (B) having the structure represented by formula (6), thereby suppressing overreaction. Furthermore, the dicarboxylic acid and the diamine react sufficiently to obtain the organic salt (B) having the structure represented by formula (7), thereby preventing over-reaction.

[0069] A second method for obtaining the organic salt (B) having the structure represented by formula (6) includes stirring and hydrolyzing a tetracarboxylic acid anhydride, which is a derivative of the tetracarboxylic acid, in water, followed by adding an equimolar amount of the diamine and stirring. The hydrolysis reaction temperature is preferably 0°C or higher and 150°C or lower, more preferably 10°C or higher and 120°C or lower, and particularly preferably 30°C or higher and 80°C or lower. By keeping the reaction temperature within the preferred range, hydrolysis can proceed sufficiently and overreaction can be suppressed. The reaction time is preferably 0.5 hours or higher and 30 hours or lower, more preferably 1 hour or higher and 20 hours or lower, and particularly preferably 2 hours or higher and 10 hours or lower. By keeping the reaction temperature within the preferred range, hydrolysis can proceed sufficiently and overreaction can be suppressed.

[0070] <(C) Solvent> The resin composition of the present invention contains (C) a solvent. The solvent in the present invention refers to a component that can dissolve (A) the soluble resin, (B) the organic salt, (D) the photosensitizer, and other components.

[0071] The content of the (C) solvent is not particularly limited, but is preferably 100 parts by mass or more and 10,000 parts by mass or less, more preferably 100 parts by mass or more and 5,000 parts by mass or less, and even more preferably 100 parts by mass or more and 2,000 parts by mass or less, relative to 100 parts by mass of the (A) soluble resin. When the content of the (C) solvent is in the above-mentioned preferred range, excellent coatability and flatness of the coating film can be obtained, and a coating film having a thickness of 1 μm or more can be formed.

[0072] The boiling point of the (C) solvent under atmospheric pressure is preferably 50° C. or higher and 250° C. or lower, and more preferably 100° C. or higher and 210° C. or lower. When the boiling point under atmospheric pressure is within the above range, the solvent can be removed from the coating film of the resin composition in a short time in the drying step of the coating film, and the resin composition has excellent step-filling properties on the patterned substrate. Examples of solvents having a boiling point under atmospheric pressure within the above range include ethyl lactate (boiling point 154°C), butyl lactate (boiling point 186°C), dipropylene glycol dimethyl ether (boiling point 171°C), diethylene glycol dimethyl ether (boiling point 162°C), diethylene glycol ethyl methyl ether (boiling point 176°C), diethylene glycol diethyl ether (boiling point 189°C), 3-methoxybutyl acetate (boiling point 171°C), ethylene glycol monoethyl ether acetate (boiling point 160°C), γ-butyrolactone (boiling point 203°C), N-methyl-2-pyrrolidone (boiling point 204°C), diacetone alcohol (boiling point 166°C), N-cyclohexyl-2-pyrrolidone (boiling point 154°C), N,N-dimethylformamide (boiling point 153°C), N,N-dimethylacetamide (boiling point 165°C), dimethyl sulfoxide (boiling point 189°C), propylene glycol monomethyl ... Examples of suitable solvents include alkylene glycol monoalkyl ethers such as ethyl ether acetate (boiling point 146°C), N,N-dimethylisobutyric acid amide (boiling point 175°C), ethylene glycol monomethyl ether (boiling point 124°C), and propylene glycol monomethyl ether (boiling point 120°C), alkyl acetates such as propyl acetate (boiling point 102°C), butyl acetate (boiling point 125°C), and isobutyl acetate (boiling point 118°C), ketones such as methyl isobutyl ketone (boiling point 116°C) and methyl propyl ketone (boiling point 102°C), and alcohols such as butyl alcohol (boiling point 117°C) and isobutyl alcohol (boiling point 108°C). Two or more of these solvents having a boiling point of 100°C or higher and 210°C or lower at atmospheric pressure may be used in combination.

[0073] The solubility parameter (SP value) of the (C) solvent is preferably 7.0 or more and 13.0 or less. By having the SP value in this range, solid precipitation can be suppressed, and the (A) soluble resin can be easily dissolved. The SP value is more preferably 12.5 or less. In the present invention, the solubility parameter (SP value) used was the literature value described in "Basic Science of Coating" (page 65, by Yuji Harasaki, Maki Shoten). Furthermore, for those without a description of the SP value, the value calculated from the evaporation energy and molar volume of atoms and atomic groups by Fedors on page 55 of the same book was used. Examples of solvents with an SP value of 7.0 or more and 13.0 or less include ethyl lactate (SP value 10.6, literature value), butyl lactate (SP value 9.7, literature value), dipropylene glycol dimethyl ether (SP value 7.9, calculated value), diethylene glycol dimethyl ether (SP value 8.1, calculated value), diethylene glycol ethyl methyl ether (SP value 8.1, calculated value), diethylene glycol diethyl ether (SP value 8.2, calculated value), 3-methoxybutyl acetate (SP value 8.7, calculated value), ethylene glycol monoethyl ether acetate (SP value 9.0, calculated value), γ-butyrolactone (SP value 12.8, literature value), N-methyl-2-pyrrolidone (SP value 11.2, literature value), diacetone alcohol (SP value 10.2, literature value), N-cyclohexyl-2- Pyrrolidone (SP value 10.8, literature value), N,N-dimethylformamide (SP value 12.1, literature value), N,N-dimethylacetamide (SP value 11.1, literature value), dimethyl sulfoxide (SP value 12.9, literature value), propylene glycol monomethyl ether acetate (SP value 8.7, calculated value), N,N-dimethylisobutyric acid amide (SP value 9.9, calculated value), ethylene glycol monomethyl ether (SP value 10.8, calculated value), propylene glycol monomethyl ether (SP value 10.2, calculated value), propyl acetate (SP value 8.7, calculated value), butyl acetate (SP value 8.5, literature value), isobutyl acetate (SP value 8.4, literature value), methyl isobutyl ketone (SP value 8.6, literature value), methyl propyl ...ether acetate (SP value 8.6, literature value), methyl propyl ether acetate (SP value 8.6, literature value), methyl propyl ether acetate (SP value 8.6, literature value), methyl propyl ether acetate (SP value 8.6, literature value), methyl propyl ether acetate (SP value 8.6, literature value), methyl propyl ether acetate (SP value 8.6, literature value), methyl propyl ether acetate (SP value 8.6, literature value), methyl propyl ether acetate (SP value Examples include butyl alcohol (SP value 11.3, literature value), and isobutyl alcohol (SP value 11.1, literature value).Two or more of these solvents having an SP value of 7.0 or more and 13.0 or less may be used in combination.

[0074] <(D) Photosensitizer> The resin composition of the present invention contains (D) a photosensitizer. The photosensitizer in the present invention refers to a component that generates reactive species upon exposure to light, and examples thereof include (D-1) a photoacid generator and (D-2) a photopolymerization initiator.

[0075] The photoacid generator (D-1) is a component that generates acid upon exposure, and the dissolution rate of the exposed areas in an alkaline aqueous solution increases, creating a dissolution contrast with the unexposed areas, thereby obtaining a positive-type relief pattern in which the exposed areas are solubilized. The positive-type relief pattern is preferably selected for applications requiring particularly high resolution. Furthermore, by containing the photoacid generator (D-1) and a crosslinking agent described below, the acid generated in the exposed areas promotes a crosslinking reaction of the crosslinking agent, thereby obtaining a negative-type relief pattern in which the exposed areas are insolubilized. The negative-type relief pattern is preferably selected for applications requiring particularly high exposure sensitivity and / or thick film processing.

[0076] (D-1) Examples of the photoacid generator include quinone diazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts.

[0077] Examples of the quinone diazide compound include a compound in which a sulfonyl group of a polyhydroxy compound is bonded to a quinone diazide via an ester bond, a compound in which a sulfonyl group of a polyamino compound is bonded to a quinone diazide via a sulfonamide bond, and a compound in which a sulfonyl group of a polyhydroxy polyamino compound is bonded to a quinone diazide via an ester bond and / or a sulfonamide bond.

[0078] As the sulfonyl group of the quinone diazide compound, either a 4-naphthoquinone diazide sulfonyl group or a 5-naphthoquinone diazide sulfonyl group is preferably used. 4-naphthoquinone diazide sulfonyl ester compounds have absorption in the i-line region of a mercury lamp and are suitable for i-line exposure. 5-naphthoquinone diazide sulfonyl ester compounds have absorption in the g-line region of a mercury lamp and are suitable for g-line exposure. In the present invention, it is preferable to select a 4-naphthoquinone diazide sulfonyl ester compound or a 5-naphthoquinone diazide sulfonyl ester compound depending on the wavelength of the light used for exposure. Furthermore, a naphthoquinone diazide sulfonyl ester compound having both a 4-naphthoquinone diazide sulfonyl group and a 5-naphthoquinone diazide sulfonyl group in the same molecule may be contained, or a 4-naphthoquinone diazide sulfonyl ester compound and a 5-naphthoquinone diazide sulfonyl ester compound may be contained.

[0079] Of the photoacid generators (D-1), sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts are preferred in that they can appropriately stabilize the acid generated by exposure. Among these, sulfonium salts are more preferred in terms of preventing wiring corrosion.

[0080] Examples of cations that form sulfonium salts include triphenylsulfonium, tri-p-tolylsulfonium, tri-o-tolylsulfonium, tris(4-methoxyphenyl)sulfonium, 1-naphthyldiphenylsulfonium, 2-naphthyldiphenylsulfonium, tris(4-fluorophenyl)sulfonium, tri-1-naphthylsulfonium, tri-2-naphthylsulfonium, tris(4-hydroxyphenyl)sulfonium, 4-(phenylthio)phenyldiphenylsulfonium, 4-(p-tolylthio)phenyldi-p-tolylsulfonium, 4-(4-methoxyphenylthio)phenylbis(4-methoxyphenyl)sulfonium, 4-(phenylthio)phenylbis(4-fluorophenyl)sulfonium, 4-(phenylthio)phenylbis(4-methoxyphenyl)sulfonium, 4-(phenylthio)phenyldi-p-tolylsulfonium, [4-(4-biphenylylthio)phenyl]-4-biphenylylphenylsulfonium, [4-(2-thioxanthoxy)phenyl]-4-biphenylylphenylsulfonium, bis[4-(4-hydroxyethoxy)phenyl]sulfonio}phenyl]diphenylsulfonium, bis[4-(diphenylsulfonio)phenyl]sulfide, bis[4-{bis[4-(2-hydroxyethoxy)phenyl]sulfonio}phenyl]sulfide, bis{4-[bis(4-fluorophenyl)sulfonio]phenyl}sulfide, bis{4-[bis(4-methylphenyl)sulfonio]phenyl}sulfide, bis{4-[bis(4-methoxyphenyl)sulfonio]phenyl}sulfide, 4-(4-benzoyl-2-chlorophenyl)sulfonium 4-(4-benzoyl-2-chlorophenylthio)phenyldiphenylsulfonium, 4-(4-benzoylphenylthio)phenylbis(4-fluorophenyl)sulfonium, 4-(4-benzoylphenylthio)phenylbis(4-fluorophenyl)sulfonium, 4-(4-benzoylphenylthio)phenyldiphenylsulfonium, 7-isopropyl-9-oxo-10-thia-9,10-dihydroanthracen-2-yldi-p-tolylsulfonium, 7-isopropyl-9-oxo-10-thia-9,10-dihydroanthracen-2-yldi-p-tolylsulfonium,10-Dihydroanthracen-2-yldiphenylsulfonium, 2-[(di-p-tolyl)sulfonio]thioxanthone, 2-[(diphenyl)sulfonio]thioxanthone, 4-(9-oxo-9H-thioxanthen-2-yl)thiophenyl-9-oxo-9H-thioxanthen-2-ylphenylsulfonium, 4-[4-(4-tert-butylbenzoyl)phenylthio]phenyldi-p-tolylsulfonium, 4-[4-(4-tert-butylbenzoyl)phenylthio]phenyldiphenylsulfonium, 4-[4-(benzoyl)phenylthio]phenyldiphenylsulfonium triarylsulfoniums such as 4-[4-(benzoylphenylthio)]phenyldi-p-tolylsulfonium, 4-[4-(benzoylphenylthio)]phenyldiphenylsulfonium, 5-(4-methoxyphenyl)thiaanthrenenium, 5-phenylthiaanthrenenium, 5-tolylthianthrenenium, 5-(4-ethoxyphenyl)thiaanthrenenium, and 5-(2,4,6-trimethylphenyl)thiaanthrenenium; diphenylphenacylsulfonium, diphenyl 4-nitrophenacylsulfonium, diphenylbenzylsulfonium, diphenyl diarylsulfonium such as phenylmethylbenzylsulfonium, 4-hydroxyphenylmethylbenzylsulfonium, 4-methoxyphenylmethylbenzylsulfonium, 4-acetocarbonyloxyphenylmethylbenzylsulfonium, 4-hydroxyphenyl(2-naphthylmethyl)methylsulfonium, 2-naphthylmethylbenzylsulfonium, 2-naphthylmethyl(1-ethoxycarbonyl)ethylsulfonium, phenylmethylphenacylsulfonium, 4-hydroxyphenylmethylphenacylsulfonium, 4-methoxyphenylmethylphenacylsulfonium, 4-acetocarbonyloxyphenylmethylphenacylsulfonium, 2-naphthylmethylphenacylsulfonium, 2-naphthyloctadecylphenacylsulfonium, 9-anthracenylmethylphenacylsulfonium, and the like. dimethylphenacylsulfonium, phenacyltrhydrothiophenium, dimethylbenzylsulfonium, benzyltetrahydrothiophenium, octadecylmethylphenacylsulfonium, and the like.

[0081] The anion forming the sulfonium salt preferably contains at least one selected from the group consisting of borate ions, phosphate ions, and gallate ions.

[0082] Examples of borate ions include pentafluorophenylborate, trifluorophenylborate, tetrafluorophenylborate, trifluoromethylphenylborate, bis(trifluoromethyl)phenylborate, pentafluoroethylphenylborate, bis(pentafluoroethyl)phenylborate, fluoro-bis(trifluoromethyl)phenylborate, fluoro-pentafluoroethylphenylborate, and fluoro-bis(pentafluoroethyl)phenylborate.

[0083] Examples of phosphate ions include hexafluorophosphate, tris(pentafluoroethyl)trifluorophosphate, and the like.

[0084] Examples of the gallate ion include tetrakis(pentafluorophenyl)gallate and tetrakis(3,5-bis(trifluoromethyl)phenyl)gallate.

[0085] The content of the photoacid generator (D-1) is preferably 0.01 parts by mass or more and 50 parts by mass or less relative to 100 parts by mass of the soluble resin (A). A content in this range is preferred in terms of good sensitivity and excellent storage stability.

[0086] The photopolymerization initiator (D-2) is a component that undergoes bond cleavage and / or reaction upon exposure to generate radicals, and by containing the photopolymerization initiator (D-2) and a radically polymerizable compound described below, a radical polymerization reaction proceeds in the exposed areas, resulting in a negative relief pattern in which the exposed areas are insolubilized. The negative relief pattern is preferably selected particularly for applications requiring high exposure sensitivity and / or thick film processing.

[0087] Examples of the (D-2) photopolymerization initiator include benzyl ketal-based photopolymerization initiators, α-hydroxyketone-based photopolymerization initiators, α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, oxime ester-based photopolymerization initiators, acridine-based photopolymerization initiators, titanocene-based photopolymerization initiators, benzophenone-based photopolymerization initiators, acetophenone-based photopolymerization initiators, aromatic ketoester-based photopolymerization initiators, benzoate ester-based photopolymerization initiators, etc. Among these, from the viewpoint of sensitivity, α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, and oxime ester-based photopolymerization initiators are preferred.

[0088] Examples of the α-aminoketone photopolymerization initiator include 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholinophenyl)-butan-1-one, and 3,6-bis(2-methyl-2-morpholinopropionyl)-9-octyl-9H-carbazole.

[0089] Examples of the acylphosphine oxide photopolymerization initiator include 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, and bis(2,6-dimethoxybenzoyl)-(2,4,4-trimethylpentyl)phosphine oxide.

[0090] Examples of the oxime ester photopolymerization initiator include 1-phenylpropane-1,2-dione-2-(O-ethoxycarbonyl)oxime, 1-phenylbutane-1,2-dione-2-(O-methoxycarbonyl)oxime, 1,3-diphenylpropane-1,2,3-trione-2-(O-ethoxycarbonyl)oxime, 1-[4-(phenylthio)phenyl]octane-1,2-dione-2-(O-benzoyl)oxime, 1-[4-[4-(carboxyphenyl)thio]phenyl]propane-1,2-dione-2-(O-acetyl ... -[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]ethanone-1-(O-acetyl)oxime, 1-[9-ethyl-6-[2-methyl-4-[1-(2,2-dimethyl-1,3-dioxolan-4-yl)methyloxy]benzoyl]-9H-carbazol-3-yl]ethanone-1-(O-acetyl)oxime, 1-(9-ethyl-6-nitro-9H-carbazol-3-yl)-1-[2-methyl-4-(1-methoxypropan-2-yloxy)phenyl]methanone-1-(O-acetyl)oxime, and the like.

[0091] The content of the photopolymerization initiator (D-2) is preferably 1 part by mass or more and 25 parts by mass or less relative to 100 parts by mass of the soluble resin (A). A content in this range is preferable in terms of good sensitivity and excellent resolution.

[0092] The photoacid generator (D-1) and the photopolymerization initiator (D-2) in the photosensitizer (D) may be used alone or in combination. The content of the photosensitizer (D) is preferably 0.01 parts by mass or more and 50 parts by mass or less relative to 100 parts by mass of the soluble resin (A). A content within the above range is preferred in terms of good sensitivity, excellent resolution, and excellent storage stability.

[0093] <Crosslinking Agent> The resin composition of the present invention may further contain a crosslinking agent. The crosslinking agent in the present invention refers to a component that crosslinks the soluble resin (A) or other components, and examples thereof include compounds having at least two functional groups such as alkoxymethyl groups, methylol groups, epoxy groups, and oxetanyl groups. By containing a crosslinking agent, the soluble resin (A) or other components can be crosslinked, thereby improving the heat resistance, strength, and chemical resistance of the cured film. Furthermore, by containing a crosslinking agent and the photoacid generator (D-1), the acid generated in the exposed areas progresses the crosslinking reaction of the crosslinking agent, thereby obtaining a negative relief pattern in which the exposed areas are insolubilized.

[0094] Examples of compounds having at least two alkoxymethyl groups or methylol groups include DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML-BisOCHP-Z, DML-BPC, DML-BisOC-P, DMOM-PC, DMOM-PTBP, DMOM-MBPC, TriML-P, TriML-35XL, TML-HQ, TML-BP, and TML-pp-BPF , TML-BPE, TML-BPA, TML-BPAF, TML-BPAP, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPPHAP, HMOM-TPPHBA, HMOMTPHAP (all of which are trade names, manufactured by Honshu Chemical Industry Co., Ltd.), "NIKALAC" (registered trademark) MX-290, "NIKALAC" MX-280, "NIKALAC" MX-270, "NIKALAC" MX-279, "NIKALAC" MW-100LM, "NIKALAC" MX-750LM (all of which are trade names, manufactured by Sanwa Chemical Co., Ltd.), and the like. Two or more of these compounds having at least two alkoxymethyl groups or methylol groups may be used in combination.

[0095] Examples of compounds having at least two epoxy groups include "Epolite" (registered trademark) 40E, "Epolite" 100E, "Epolite" 200E, "Epolite" 400E, "Epolite" 70P, "Epolite" 200P, "Epolite" 400P, "Epolite" 1500NP, and "Epolite" 80MF. , "Epolight" 4000, "Epolight" 3002 (all manufactured by Kyoeisha Chemical Co., Ltd.), "Denacol" (registered trademark) EX-212L, "Denacol" EX-214L, "Denacol" EX-216L, "Denacol" EX-850L (all manufactured by Nagase ChemteX Corporation), GAN, GOT (all manufactured by Nippon Kayaku Co., Ltd.), "Epikote" (registered trademark) 828, "Epikote" 1002, "Epikote" 1750, "Epikote" 1007, YX8100-BH30, E1256, E4250, E4275 (all manufactured by Japan Epoxy Resins Co., Ltd.), "E Examples of epoxy resins include Piclon® EXA-9583 and HP4032 (manufactured by DIC Corporation), VG3101 (manufactured by Mitsui Chemicals, Inc.), Tepic® S, Tepic® G, and Tepic® P (manufactured by Nissan Chemical Industries, Ltd.), Denacol® EX-321L (manufactured by Nagase ChemteX Corporation), NC6000 (manufactured by Nippon Kayaku Co., Ltd.), Epotohto® YH-434L (manufactured by Tohto Kasei Co., Ltd.), EPPN502H and NC3000 (manufactured by Nippon Kayaku Co., Ltd.), and Epiclon® N695 and HP7200 (manufactured by DIC Corporation). Two or more of these compounds having at least two epoxy groups may be used in combination.

[0096] Examples of compounds having at least two oxetanyl groups include Ethanacol EHO, Ethanacol OXBP, Ethanacol OXTP, and Ethanacol OXMA (all manufactured by Ube Industries, Ltd.). Two or more of these compounds having at least two oxetanyl groups may be used in combination.

[0097] The content of the crosslinking agent is preferably 5 parts by mass or more and 100 parts by mass or less, and more preferably 10 parts by mass or more and 90 parts by mass or less, relative to 100 parts by mass of the soluble resin (A). When the content is in this preferred range, good chemical resistance, heat resistance, and strength are achieved.

[0098] <Radical Polymerizable Compound> The resin composition of the present invention may further contain a radical polymerizable compound. The radical polymerizable compound in the present invention refers to a component in which a polymerization reaction proceeds by a radical mechanism. By containing the radical polymerizable compound and the (D-2) photopolymerization initiator, a radical polymerization reaction proceeds in the exposed areas, and a negative relief pattern in which the exposed areas are insolubilized can be obtained.

[0099] Examples of the radical polymerizable compound include trimethylolpropane tri(meth)acrylate, ditrimethylolpropane tri(meth)acrylate, ditrimethylolpropane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tripentaerythritol hepta(meth)acrylate, tripentaerythritol octa(meth)acrylate, 2,2-bis[4- Examples of suitable radical polymerizable compounds include (3-(meth)acryloxy-2-hydroxypropoxy)phenyl]propane, 1,3,5-tris((meth)acryloxyethyl)isocyanuric acid, 1,3-bis((meth)acryloxyethyl)isocyanuric acid, 9,9-bis[4-(2-(meth)acryloxyethoxy)phenyl]fluorene, 9,9-bis[4-(3-(meth)acryloxypropoxy)phenyl]fluorene, 9,9-bis(4-(meth)acryloxyphenyl)fluorene, and acid-modified, ethylene oxide-modified, and propylene oxide-modified products thereof. Two or more of these radical polymerizable compounds may be used in combination.

[0100] The content of the radical polymerizable compound is preferably 10 parts by mass or more and 90 parts by mass or less, and more preferably 20 parts by mass or more and 80 parts by mass or less, relative to 100 parts by mass of the soluble resin (A). When the content is in this preferred range, good sensitivity and excellent heat resistance and strength are achieved.

[0101] <Dissolution promoter> The resin composition of the present invention may further contain a dissolution promoter. In the present invention, the dissolution promoter refers to a component that improves the solubility of the resin composition in an alkaline aqueous solution. The inclusion of a dissolution promoter increases the dissolution rate in the alkaline aqueous solution that is the developer, and increases the dissolution contrast between the cured and uncured parts of the resin composition coating film, making it easier to obtain fine pattern processability.

[0102] The solubility promoters include Bis-Z, BisOC-Z, BisOPP-Z, BisP-CP, Bis26X-Z, BisOTBP-Z, BisOCHP-Z, BisOCR-CP, BisP-MZ, Bis P-EZ, Bis26X-CP, BisP-PZ, BisP-IPZ, BisCRIPZ, BisOCP-IPZ, BisOIPP-CP, Bis26X-IPZ, BisOTBP-CP, TekP-4 HBPA (tetrakis P-DO-BPA), TrisP-HAP, TrisP-PA, TrisP-PHBA, TrisP-SA, TrisOCR-PA, BisOFP-Z, BisRS-2P, Bis PG-26X, BisRS-3P, BisOC-OCHP, BisPC-OCHP, Bis25X-OCHP, Bis26X-OCHP, BisOCHP-OC, Bis236T-OCHP, Methylenetri Bis-FR-CR, BisRS-26X, BisRS-OCHP (all trade names, manufactured by Honshu Chemical Industry Co., Ltd.), BIR-OC, BIP-PCBIR-PC, BIR-PTBP, BIR-PCHP, BIP-BIOC-F, 4PC, BIR-BIPC-F, TEP-BIP-A (all trade names, manufactured by Asahi Organic Materials Industry Co., Ltd.), 1,4-dihydroxynaphthalene, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene Examples of the dissolution promoter include phenolic compounds such as cinnaphthalene, 1,7-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 2,4-dihydroxyquinoline, 2,6-dihydroxyquinoline, 2,3-dihydroxyquinoxaline, anthracene-1,2,10-triol, anthracene-1,8,9-triol, and 8-quinolinol. Two or more of these dissolution promoters may be used in combination.

[0103] The content of the dissolution promoter is preferably 1 part by mass or more and 20 parts by mass or less relative to 100 parts by mass of the soluble resin (A). When the content is in this preferred range, good heat resistance and fine pattern processability can be obtained.

[0104] <Adhesion Improver> The resin composition of the present invention may further contain an adhesion improver. The adhesion improver in the present invention refers to a component that improves the adhesion between the resin composition film and the substrate.

[0105] The substrate may be a Si substrate, SiO ２ Examples of the substrate include a SiN substrate, an Al substrate, a Cu substrate, a Ti substrate, and an ITO substrate.

[0106] Examples of adhesion improvers include silane coupling agents such as vinyltrimethoxysilane, vinyltriethoxysilane, epoxycyclohexylethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, and N-phenyl-3-aminopropyltrimethoxysilane, titanium chelating agents, aluminum chelating agents, and compounds obtained by reacting an aromatic amine compound with an alkoxy group-containing silicon compound. Two or more of these adhesion improvers may be used in combination.

[0107] The content of the adhesion improver is preferably 0.1 parts by mass or more and 10 parts by mass or less relative to 100 parts by mass of the total amount of the resin composition excluding the (C) solvent.

[0108] <Surfactant> The resin composition of the present invention may further contain a surfactant. The surfactant in the present invention refers to a component that enhances the wettability between the resin composition and the base substrate. Examples of the surfactant include fluorine-based surfactants such as the SH series, SD series, and ST series from Dow Corning Toray Co., Ltd., the BYK series from BYK Japan K.K., the KP series from Shin-Etsu Chemical Co., Ltd., the Disfoam series from NOF Corporation, the Megafac (registered trademark) series from DIC Corporation, the Fluorad series from Sumitomo 3M Limited, the Surflon (registered trademark) series and Asahi Guard (registered trademark) series from Asahi Glass Co., Ltd., and the Polyfox series from Omnova Solutions, as well as acrylic and / or methacrylic surfactants such as the Polyflow series from Kyoeisha Chemical Co., Ltd. and the Disparlon (registered trademark) series from Kusumoto Chemical Co., Ltd.

[0109] The content of the surfactant is preferably 0.001 parts by mass or more and 1 part by mass or less relative to 100 parts by mass of the total amount of the resin composition excluding the (C) solvent.

[0110] <Cured Product> The cured product of the present invention is a cured product obtained by curing the resin composition, and may be in any form as long as the resin composition is cured by light or heat. Examples of a method for curing by light include a method of curing by exposure to 50 mJ to 3,000 mJ with 365 nm i-line, 405 nm h-line, or 432 nm g-line from a high-pressure mercury lamp, and examples of a method for curing by heat include a method of curing by heat treatment at 150°C to 500°C for 5 minutes to 5 hours.

[0111] The method for producing the cured product includes the steps of applying the resin composition onto a substrate and drying it to form a resin film on the substrate, exposing the resin composition film to light, developing the resin composition film by removing the unexposed or unexposed portions of the resin composition film with a developer, and heat-treating the developed resin composition film to cure it.

[0112] Examples of the process of applying the resin composition onto a substrate and drying it to form a resin film on the substrate include a process of applying the resin composition onto a substrate using a spin coater, spray coater, screen coater, blade coater, die coater, calendar coater, meniscus coater, bar coater, roll coater, comma roll coater, gravure coater, slit die coater, or the like, and drying it at a temperature in the range of 50°C to 150°C for 1 minute to 24 hours to form a resin composition coating.

[0113] Examples of the step of exposing the resin composition film include a step of exposing the resin composition film to 50 mJ or more and 3,000 mJ or less of 365 nm i-line, 405 nm h-line, and 432 nm g-line from a high-pressure mercury lamp through a mask having a desired pattern. The resin composition film exposed by the above step may be subjected to post-exposure baking. The post-exposure baking is preferably performed at 50°C or more from the viewpoints of curability and adhesion to the substrate, and preferably at 150°C or less from the viewpoint of resolution.

[0114] Examples of the process of removing and developing the unexposed or exposed portions of the resin composition coating with a developer include spraying the developer on the surface of the resin composition coating, puddling the developer on the surface of the resin composition coating, immersing the resin composition coating in the developer, or immersing and applying ultrasonic waves. The development conditions, such as the development time, development step, and developer temperature, may be any conditions that allow the unexposed or exposed portions to be removed and a pattern to be formed. Rinse treatment is preferably performed after development. The rinse treatment is preferably performed using water, alcohols such as ethanol and isopropyl alcohol, ethyl lactate, propylene glycol monomethyl ether acetate, or a combination of two or more of these.

[0115] Examples of the process of heat-treating and curing the resin composition coating after development include a process of heat-treating the resin composition coating at 150°C or higher and 500°C or lower for 5 minutes to 5 hours to form a cured product. The heat treatment can be performed by selecting a temperature and gradually increasing the temperature, or by selecting a temperature range and continuously increasing the temperature. An example of the former is a method of performing heat treatment at 130°C and 200°C for 30 minutes each. An example of the latter is a method of increasing the temperature from room temperature to 400°C over 2 hours.

[0116] <Electronic Component> The electronic component of the present invention includes the cured product. The cured product can be used as an insulating film, a protective film, or the like that constitutes the electronic component.

[0117] Examples of electronic components include active components having semiconductors such as transistors, diodes, integrated circuits (ICs), and memories, as well as passive components such as resistors, capacitors, and inductors. Specific examples of cured products within electronic components include passivation films for semiconductors, surface protective films for semiconductor elements, thin film transistors (TFTs), and the like, interlayer insulating films such as interlayer insulating films between rewirings in multilayer wiring for high-density packaging of 2 to 10 layers, insulating films and protective films for touch panel displays, and insulating layers for organic electroluminescent devices, but the cured products can also have various other structures.

[0118] <Display Device> The display device of the present invention includes the cured product. The cured product can be used as a planarizing layer or a pixel dividing layer that constitutes the display device.

[0119] Examples of display devices include organic EL display devices having a planarization layer, a first electrode, a pixel division layer, an organic EL layer, and a second electrode on a substrate, with the planarization layer and / or the pixel division layer containing the cured product of the present invention. An example of an active matrix display device is a substrate such as glass or a resin film, which has TFTs (thin film transistors) and wiring located on the sides of the TFTs and connected to the TFTs, a planarization layer covering the irregularities thereon, and a display element disposed on the planarization layer. The display element and the wiring are connected via contact holes formed in the planarization layer. The cured product obtained by curing the photosensitive resin composition of the present invention is preferably used for the planarization layer because it has excellent planarization properties and pattern dimensional stability. In particular, flexible organic EL display devices have become mainstream in recent years, and the substrate carrying the aforementioned drive circuit may be a resin film.

[0120] The present invention will be described below with reference to examples, but the present invention is not limited to these examples. First, the evaluation methods used in each example and comparative example will be described. (1) (D-2) Evaluation of fine pattern processability of negative resin composition containing photopolymerization initiator (D-2) A negative resin composition containing a photopolymerization initiator was applied to a copper substrate using a spin coater (1H-360S, manufactured by Mikasa Co., Ltd.) and heated and dried at 100°C for 3 minutes using a hot plate (SCW-636, manufactured by Dainippon Screen Co., Ltd.) to form a 10 μm coating film. The copper substrate on which this coating film had been formed was then irradiated with 200 mJ / cm using an aligner (PLA-501F, manufactured by Canon Inc.) through a photomask having L / S=30 μm / 30 μm patterns, 20 μm / 20 μm patterns, and 15 μm / 15 μm patterns. ２The sample was exposed to light at 1000 W. The exposure dose was calculated by measuring the illuminance at 365 nm. The sample was then heated at 120°C for 1 minute, and developed with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) as the developer using an automatic developer (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.) using two paddles for 45 seconds, followed by rinsing with pure water for 30 seconds. The patterned area was then observed using an FPD microscope (MX61 manufactured by Olympus Corporation) to determine the minimum pattern size that could be processed. The fine pattern processability was evaluated based on the following criteria. Processable here means that the opening dimensions of the pattern after development were 95% or more of the dimensions of the photomask pattern. A and B were evaluated as acceptable, and C was evaluated as unacceptable. A: The minimum pattern size was 15 μm. B: The minimum pattern size was 20 μm. C: The minimum pattern size was 30 μm. (2) (D-1) Evaluation of Fine Pattern Processability of Positive Resin Composition Containing a Photoacid Generator A positive resin composition containing a photoacid generator (D-1) was applied to a copper substrate using a spin coater (1H-360S manufactured by Mikasa Co., Ltd.) and heated and dried for 3 minutes at 100°C using a hot plate (SCW-636 manufactured by Dainippon Screen Co., Ltd.) to form a 10 μm coating film. The copper substrate on which this coating film was formed was then irradiated with 800 mJ / cm using an ultra-high pressure mercury lamp as a light source, using an aligner (PLA-501F manufactured by Canon Inc.) through a photomask having L / S=15 μm / 15 μm patterns, 10 μm / 10 μm patterns, and 5 μm / 5 μm patterns. ２The film was exposed to light at 1000 W at 300 W. The exposure dose was calculated by measuring the illuminance at 365 nm. Thereafter, using an automatic developer (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.), the film was developed with 2 paddles for 45 seconds using a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) as the developer, and then rinsed with pure water for 30 seconds. The patterned area was then observed using an FPD microscope (MX61 manufactured by Olympus Corporation) to determine the minimum pattern size that could be processed, and the fine pattern processability was evaluated based on the following criteria. Processable here means that the opening dimensions of the pattern after development are 95% or more of the dimensions of the photomask pattern. A and B were evaluated as pass, and C was evaluated as fail. A: The minimum pattern size was 5 μm. B: The minimum pattern size was 10 μm. C: The minimum pattern size was 15 μm. (3) Evaluation of Fine Pattern Processability of Negative Resin Composition Containing (D-1) Photoacid Generator The negative resin composition containing the photoacid generator (D-1) was applied to a copper substrate using a spin coater (1H-360S manufactured by Mikasa Co., Ltd.) and heated and dried for 3 minutes at 120°C using a hot plate (SCW-636 manufactured by Dainippon Screen Co., Ltd.) to form a 15 μm coating film. The copper substrate on which this coating film was formed was irradiated with 500 mJ / cm using an ultra-high pressure mercury lamp as a light source through a photomask having L / S = 15 μm / 15 μm patterns, 10 μm / 10 μm patterns, and 5 μm / 5 μm patterns using an aligner (PLA-501F manufactured by Canon Inc.). ２The sample was exposed to light at 100°C for 3 minutes. The exposure dose was calculated by measuring the illuminance at 365 nm. The sample was then heated at 100°C for 3 minutes, and developed with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) as the developer using an automatic developer (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.) using two paddles for 30 seconds, followed by rinsing with pure water for 30 seconds. The patterned area was then observed using an FPD microscope (MX61 manufactured by Olympus Corporation) to determine the minimum pattern size that could be processed. The fine pattern processability was evaluated based on the following criteria. Processable here means that the opening dimensions of the pattern after development were 95% or more of the dimensions of the photomask pattern. A to C were evaluated as acceptable, and D was evaluated as unacceptable. A: Minimum pattern size was 5 μm. B: Minimum pattern size was 10 μm. C: Minimum pattern size was 15 μm. D: A pattern size of 15 μm was not processable. (4) Evaluation of Substrate Adhesion of Non-Photosensitive Resin Composition The non-photosensitive resin composition was applied to a copper substrate using a spin coater (1H-360S, manufactured by Mikasa Co., Ltd.) and dried by heating at 100°C for 3 minutes using a hot plate (SCW-636, manufactured by Dai-Nippon Screen Co., Ltd.) to form a 10 μm coating film. The copper substrate on which this coating film was formed was heated to 280°C at a heating rate of 3.5°C / min in an oxygen concentration of 20 ppm or less using an inert oven (CLH-21CD-S, manufactured by Koyo Thermo Systems Co., Ltd.), and then heat-treated for 1 hour. The resulting cured film was cross-cut using a single-edged blade at 2 mm intervals in 10 rows and 10 columns in accordance with the cross-cut method of JIS K5400-8.5. A peel test was performed using cellophane adhesive tape, and the substrate adhesion was evaluated according to the following criteria. A and B were considered pass, and C, D, and E were considered fail.A: The lattice number of the cured film adhered to the substrate after the test was 100 B: The lattice number of the cured film adhered to the substrate after the test was 80 or more and less than 100 C: The lattice number of the cured film adhered to the substrate after the test was 50 or more and less than 80 D: The lattice number of the cured film adhered to the substrate after the test was 20 or more and less than 50 E: The lattice number of the cured film adhered to the substrate after the test was less than 20 (5) (D-2) Evaluation of substrate adhesion of negative resin composition containing photopolymerization initiator (D-2) A negative resin composition containing a photopolymerization initiator was applied to a copper substrate using a spin coater (1H-360S manufactured by Mikasa Co., Ltd.) and heated and dried at 100°C for 3 minutes using a hot plate (SCW-636 manufactured by Dainippon Screen Co., Ltd.) to form a coating film of 10 μm. The copper substrate on which this coating film was formed was aligner (PLA-501F manufactured by Canon Inc.) through a photomask having a 100 μm×100 μm square pattern, and irradiated with 200 mJ / cm using an ultra-high pressure mercury lamp as a light source. ２The film was exposed to light at 1000 K. The exposure dose was calculated by measuring the illuminance at 365 nm. The film was then heated at 120°C for 1 minute, and developed using an automatic developer (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.) with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) as the developer, with two paddles for 45 seconds, and then rinsed with pure water for 30 seconds. Thereafter, using an inert oven (CLH-21CD-S manufactured by Koyo Thermo Systems Co., Ltd.), the film was heated to 280°C at a heating rate of 3.5°C / min in an oxygen concentration of 20 ppm or less, and then heat-treated for 1 hour. The shear strength of the pattern of the obtained cured film was measured using a die shear tester (Dage-Series 4000 manufactured by Nordson Corporation) under the conditions of a 150 μm wide tool, a height of 1 μm from the copper substrate, and a speed of 15 μm / sec. The average value of 10 measurements was taken as the shear strength, and the substrate adhesion was evaluated based on the following criteria. A and B were rated as pass, and C was rated as fail. A: Shear strength of 300 mN or more B: Shear strength of 250 mN or more but less than 300 mN C: Shear strength less than 250 mN. (6) (D-1) Evaluation of substrate adhesion of positive resin composition containing a photoacid generator (D-1) A positive resin composition containing a photoacid generator was applied to a copper substrate using a spin coater (1H-360S manufactured by Mikasa Co., Ltd.), and then heated and dried at 100°C for 3 minutes using a hot plate (SCW-636 manufactured by Dainippon Screen Co., Ltd.) to form a 10 μm coating film. The copper substrate on which this coating film had been formed was then irradiated with 800 mJ / cm using an ultra-high pressure mercury lamp as a light source using an aligner (PLA-501F manufactured by Canon Inc.) through a photomask having a 100 μm x 100 μm square pattern. ２The film was exposed to light at 1000 W at 300 W. The exposure dose was calculated by measuring the illuminance at 365 nm. Thereafter, using an automatic developer (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.), the film was developed using a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) as the developer with two paddles for 45 seconds, and then rinsed with pure water for 30 seconds. Thereafter, using an inert oven (CLH-21CD-S manufactured by Koyo Thermo Systems Co., Ltd.), the film was heated to 280°C at a heating rate of 3.5°C / min in an oxygen concentration of 20 ppm or less, and then heat-treated for 1 hour. The shear strength of the pattern of the obtained cured film was measured using a die shear tester (Dage-Series 4000 manufactured by Nordson Corporation) under conditions of a 150 μm wide tool, a height of 1 μm from the copper substrate, and a speed of 15 μm / sec. The average value of 10 measurements was taken as the shear strength, and the substrate adhesion was evaluated based on the following criteria: A and B were considered pass, and C was considered fail. A: Shear strength of 300 mN or more B: Shear strength of 250 mN or more but less than 300 mN C: Shear strength of less than 250 mN. (7) (D-1) Evaluation of substrate adhesion of negative resin composition containing a photoacid generator (D-1) A negative resin composition containing a photoacid generator was applied to a copper substrate using a spin coater (1H-360S manufactured by Mikasa Co., Ltd.), and then heated and dried for 3 minutes at 120°C using a hot plate (SCW-636 manufactured by Dainippon Screen Co., Ltd.) to form a 15 μm coating film. The copper substrate on which this coating film had been formed was then irradiated with 500 mJ / cm using an ultra-high pressure mercury lamp as a light source using an aligner (PLA-501F manufactured by Canon Inc.) through a photomask having a 100 μm x 100 μm square pattern. ２The film was exposed to light at 100°C for 1 minute. The exposure dose was calculated by measuring the illuminance at 365 nm. The film was then heated at 100°C for 1 minute, and developed using an automatic developer (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.) with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) as the developer, with two paddles for 30 seconds, and then rinsed with pure water for 30 seconds. The film was then heated to 200°C at a heating rate of 3.5°C / min in an oxygen concentration of 20 ppm or less using an inert oven (CLH-21CD-S manufactured by Koyo Thermo Systems Co., Ltd.), and then heat-treated for 1 hour. The shear strength of the pattern of the obtained cured film was measured using a die shear tester (Dage-Series 4000 manufactured by Nordson Corporation) under the conditions of a 150 μm wide tool, a height of 1 μm from the copper substrate, and a speed of 15 μm / sec. The average value of 10 measurements was taken as the shear strength, and the substrate adhesion was evaluated based on the following criteria. A and B were rated as pass, and C was rated as fail. A: Shear strength of 200 mN or more B: Shear strength of 150 mN or more but less than 200 mN C: Shear strength less than 150 mN. (8) Evaluation of storage stability After preparing the resin composition, the viscosity at 25°C was measured 12 to 24 hours later using an E-type viscometer (TVE-25 manufactured by Toki Sangyo Co., Ltd.), and the value was recorded as V １ The resin composition was then sealed and stored at room temperature (23°C) for 4 weeks, after which the viscosity was measured, and the value was recorded as V ２ The viscosity increase rate (%) was calculated as (V ２ -V １ ) / V １The storage stability was evaluated based on the following criteria, with the average viscosity being 1 / 300 of the original viscosity. A, B, and C were rated as pass, and D was rated as fail. A: Viscosity increase rate less than 3% B: Viscosity increase rate 3% or more but less than 5% C: Viscosity increase rate 5% or more but less than 20% D: Viscosity increase rate 20% or more. [Synthesis Example 1: Synthesis of Polyhydroxystyrene (P1)] A total of 20 g of p-t-butoxystyrene and styrene in a molar ratio of 3:1 was added to a mixed solution containing 500 mL of tetrahydrofuran and 0.01 mol of sec-butyllithium as an initiator, and polymerization was carried out at 120°C for 3 hours with stirring. The polymerization termination reaction was carried out by adding 0.1 mol of methanol to the reaction solution. Next, the reaction mixture was poured into methanol to purify the polymer, and the precipitated polymer was dried, yielding a white polymer. The polymer was then dissolved in 400 mL of acetone, and a small amount of concentrated hydrochloric acid was added at 60°C, followed by stirring for 7 hours. The polymer was then poured into water to precipitate the polymer, and the p-t-butoxystyrene was deprotected to convert it to hydroxystyrene. The polymer was then washed and dried to obtain a purified copolymer of p-hydroxystyrene and styrene (P1). [Synthesis Example 2: Synthesis of Polyimide Precursor (P2)] In a dry nitrogen stream, 4,4'-oxydiphthalic anhydride (hereinafter referred to as ODPA) (21.72 g, 0.070 mol) and γ-butyrolactone (hereinafter referred to as GBL) were dissolved in GBL in a flask. Subsequently, 3-aminophenol (hereinafter referred to as MAP) (1.53 g, 0.014 mol), 1,3-bis(3-aminopropyl)tetramethyldisiloxane (hereinafter referred to as SiDA) (0.87 g, 0.0035 mol), and 2,2-bis(3-aminophenyl)hexafluoropropane (19.72 g, 0.059 mol) were added, and the mixture was stirred for 4 hours at 60° C. After the reaction solution was allowed to cool, it was poured into 2.5 L of water, and the resulting white precipitate was filtered, washed three times with water, and then vacuum-dried at 80° C. for 24 hours to obtain a polyimide precursor (P2). Synthesis Example 3: Synthesis of Polyimide Precursor (P3) A polyimide precursor (P3) was obtained in the same manner as in Synthesis Example 2, except that 2,2-bis(3-aminophenyl)hexafluoropropane (19.72 g, 0.059 mol) was replaced with 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (hereinafter, BAHF) (21.55 g, 0.059 mol).[Synthesis Example 4: Synthesis of Polyimide (P4)] The reaction solution obtained in Synthesis Example 3 was further heated to 200°C and stirred for 4 hours. After allowing the reaction solution to cool, it was poured into 2.5 L of water and the resulting white precipitate was filtered, washed three times with water, and then vacuum dried at 80°C for 24 hours to obtain polyimide (P4). [Synthesis Example 5: Synthesis of Polyimide (P5)] Under a dry nitrogen stream, 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic dianhydride (hereinafter referred to as TDA-100) (30.03 g, 0.1 mol) was added to 100 g of GBL and dissolved with stirring at 60°C. Subsequently, MAP (0.55 g, 0.005 mol) and 2,2-bis(3-aminophenyl)hexafluoropropane (30.1 g, 0.09 mol) were added, and the mixture was stirred at 60°C for 1 hour. The temperature was then raised to 200°C and the mixture was stirred for 4 hours. The cooled reaction solution was then poured into 3 L of water to precipitate, and the precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 5 hours to obtain polyimide (P5). [Synthesis Example 6: Synthesis of Polyimide (P6)] Polyimide (P6) was obtained in the same manner as in Synthesis Example 5, except that 2,2-bis(3-aminophenyl)hexafluoropropane (30.08 g, 0.09 mol) was replaced with BAHF (32.96 g, 0.09 mol). Synthesis Example 7: Synthesis of Polyimide Precursor (P7) Under a dry nitrogen stream, ODPA (31.02 g, 0.10 mol) was dissolved in 200 g of GBL. BAHF (32.96 g, 0.09 mol; 90 mol% based on all amines and their derivatives) was added thereto, and the mixture was stirred at 20°C for 1 hour, followed by stirring at 50°C for 2 hours. MAP (1.09 g, 0.01 mol; 10 mol% based on all amines and their derivatives) was then added thereto, and the mixture was stirred at 50°C for 2 hours. A solution of N,N-dimethylformamide dimethyl acetal (21.5 g, 0.18 mol) diluted with 20 g of GBL was then added in small portions, and the mixture was further stirred at 50°C for 3 hours. The reaction solution was then allowed to cool, and poured into 3 L of water to precipitate. The precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 5 hours to obtain polyimide precursor (P7).Synthesis Example 8: Synthesis of Polybenzoxazole Precursor (P8) Under a dry nitrogen stream, 22.93 g (0.100 mol) of 1,1'-(4,4'-oxybenzoyl)diimidazole (hereinafter referred to as PBOM) was dissolved in 234.67 g of NMP at 60°C. MAP (1.09 g, 0.010 mol) was added to the solution along with 5 g of NMP, and the mixture was allowed to react at 85°C for 15 minutes. Subsequently, 32.55 g (0.105 mol) of 6FAP was added along with 20 g of NMP, and the mixture was allowed to react at 85°C for 3 hours. After completion of the reaction, the mixture was cooled to room temperature, and the solution was poured into 3 L of water to obtain a white precipitate. The precipitate was collected by filtration, washed three times with water, and then dried in a forced-air dryer at 50°C for 3 days to obtain a powder of polybenzoxazole precursor (P8). [Synthesis Example 9: Synthesis of Polybenzoxazole (P9)] The reaction solution obtained in Synthesis Example 8 was further heated to 200°C and stirred for 4 hours. After allowing the reaction solution to cool, it was poured into 2.5 L of water, and the resulting white precipitate was filtered, washed three times with water, and then vacuum dried at 80°C for 24 hours to obtain polybenzoxazole (P9). [Synthesis Example 10: Synthesis of Organic Salt (M1)] ODPA (6.20 g, 0.020 mol) and 200 g of ion-exchanged water were added to a flask under a dry nitrogen stream, and the mixture was stirred at 80°C to hydrolyze the ODPA. Subsequently, 2,2-bis(3-aminophenyl)hexafluoropropane (6.68 g, 0.020 mol) was added, and the mixture was stirred at 80°C for 1 hour. The resulting yellow-white precipitate was filtered, washed three times with water, and then vacuum dried at 80°C for 24 hours to obtain organic salt (M1). Synthesis Example 11: Synthesis of Organic Salt (M2) Organic salt (M2) was obtained in the same manner as in Synthesis Example 10, except that 2,2-bis(3-aminophenyl)hexafluoropropane (6.68 g, 0.020 mol) was changed to BAHF (7.33 g, 0.020 mol).

[0121] The names of the compounds used in the examples and comparative examples are shown below. [Synthesis Example 12: Synthesis of organic salt (M3)] Organic salt (M3) was obtained in the same manner as in Synthesis Example 10, except that 2,2-bis(3-aminophenyl)hexafluoropropane (6.68 g, 0.020 mol) was changed to 2,2-bis(3-amino-4-hydroxyphenyl)propane (5.17 g, 0.020 mol). [Synthesis Example 13: Synthesis of organic salt (M4)] Organic salt (M4) was obtained in the same manner as in Synthesis Example 10, except that ODPA (6.20 g, 0.02 mol) was changed to TDA-100 (6.01 g, 0.02 mol). [Synthesis Example 14: Synthesis of organic salt (M5)] Organic salt (M5) was obtained in the same manner as in Synthesis Example 11, except that ODPA (6.20 g, 0.02 mol) was changed to TDA-100 (6.01 g, 0.02 mol). [Synthesis Example 15: Synthesis of organic salt (M6)] Organic salt (M6) was obtained in the same manner as in Synthesis Example 12, except that ODPA (6.20 g, 0.02 mol) was changed to TDA-100 (6.01 g, 0.02 mol). [Synthesis Example 16: Synthesis of organic salt (M7)] Organic salt (M7) was obtained in the same manner as in Synthesis Example 10, except that ODPA (6.20 g, 0.02 mol) was changed to 4,4'-dicarboxydiphenyl ether (5.16 g, 0.02 mol). [Synthesis Example 17: Synthesis of organic salt (M8)] Organic salt (M8) was obtained in the same manner as in Synthesis Example 11, except that ODPA (6.20 g, 0.02 mol) was changed to 4,4'-dicarboxydiphenyl ether (5.16 g, 0.02 mol). [Synthesis Example 18: Synthesis of organic salt (M9)] Organic salt (M97) was obtained in the same manner as in Synthesis Example 12, except that ODPA (6.20 g, 0.02 mol) was changed to 4,4'-dicarboxydiphenyl ether (5.16 g, 0.02 mol). Synthesis Example 19: Synthesis of organic salt (M10) Organic salt (M10) was obtained in the same manner as in Synthesis Example 10, except that ODPA (6.20 g, 0.020 mol) was replaced with phthalic anhydride (2.96 g, 0.020 mol) and 2,2-bis(3-aminophenyl)hexafluoropropane (6.68 g, 0.020 mol) was replaced with aniline (1.86 g, 0.020 mol). The names of the compounds used in the examples and comparative examples are shown below.<(C) Solvent> GBL: γ-butyrolactone EL: Ethyl lactate <(D-1) Photoacid generator> HA5-170: HA5-170 (manufactured by Toyo Gosei Co., Ltd.) CPI-310FG: CPI-310FG (manufactured by San-Apro Ltd.) <(D-2) Photopolymerization initiator> OXE02: "Irgacure" (registered trademark) OXE02 (manufactured by BASF Japan Ltd.) <Radical polymerizable compound> DCP-A: Light acrylate DCP-A (manufactured by Kyoeisha Chemical Co., Ltd.) BP-6EM: Light ester BP-6EM (manufactured by Kyoeisha Chemical Co., Ltd.) MOI-BP: Karenz MOI-BP (manufactured by Showa Denko K.K.) <Crosslinking agent> MW-100LM: "NIKALAC" (registered trademark) MW-100LM (manufactured by Sanwa Chemical Co., Ltd.) MX-270: "NIKALAC" (registered trademark) MX-270 (manufactured by Sanwa Chemical Co., Ltd.) TEPIC-VL: TEPIC-VL (manufactured by Nissan Chemical Industries, Ltd.) <Adhesion improver> KBM403 (manufactured by Shin-Etsu Chemical Co., Ltd.) <Surfactant> PF77: Polyflow No. 77 (manufactured by Kyoeisha Chemical Co., Ltd.) [Example 1] 3.5 g of polyhydroxystyrene (P1), 0.0175 g of organic salt (M1), 2.1 g of GBL, and 3.1 g of EL were mixed and pressure-filtered using a filter with a retention particle size of 1 μm to prepare a non-photosensitive resin composition. The substrate adhesion and storage stability of the non-photosensitive resin compositions were evaluated according to the evaluation methods (4) and (8) above. [Examples 2 to 19] Non-photosensitive resin compositions were prepared in the same manner as in Example 1 using (A) soluble resin, (B) organic salt, and (C) solvent as shown in Table 1, and the substrate adhesion and storage stability of the non-photosensitive resin compositions were evaluated according to the evaluation methods (4) and (8) above. [Comparative Examples 1 to 5] Non-photosensitive resin compositions were prepared in the same manner as in Example 1 using (A) soluble resin, (B) organic salt, and (C) solvent as shown in Table 1, and the substrate adhesion and storage stability of the non-photosensitive resin compositions were evaluated according to the evaluation methods (4) and (8) above.

[0122]

[0123] The evaluation results of Examples 1 to 19 and Comparative Examples 1 to 5 are shown in Table 2.

[0124]

[0125] [Example 20] Under yellow light, 3.5 g of polyhydroxystyrene (P1), 0.0175 g of organic salt (M1), 0.5 g of OXE02, 0.5 g of DCP-A, 1.5 g of BP-6EM, 0.5 g of MOI-BP, 1.0 g of MW-100LM, 0.5 g of MX-270, 0.25 g of KBM403, 0.003 g of PF77, 2.1 g of GBL, and 3.1 g of EL were mixed and pressure-filtered using a filter with a retention particle size of 1 μm to prepare a negative resin composition. According to the evaluation methods (1), (5), and (8) above, the fine pattern processability, substrate adhesion, and storage stability of the negative resin composition containing the photopolymerization initiator (D-2) were evaluated. [Example 21] to [Example 40] (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components as described in Tables 3-1 and 3-2, and (D-2) photopolymerization initiator were used in the same manner as in Example 20 to prepare negative resin compositions. The fine pattern processability, substrate adhesion, and storage stability of the negative resin compositions containing the photopolymerization initiator were evaluated according to the evaluation methods described above in (1), (5), and (8). [Comparative Example 6] to [Comparative Example 10] (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components as described in Table 3-2 were used in the same manner as in Example 20 to prepare negative resin compositions containing the photopolymerization initiator. The fine pattern processability, substrate adhesion, and storage stability of the negative resin compositions containing the photopolymerization initiator were evaluated according to the evaluation methods described above in (1), (5), and (8).

[0126]

[0127]

[0128] The evaluation results of Examples 20 to 40 and Comparative Examples 6 to 10 are shown in Table 4.

[0129]

[0130] [Example 41] Under yellow light, 3.5 g of polyhydroxystyrene (P1), 0.0175 g of organic salt (M1), 0.4 g of HA5-170, 0.17 g of TrisP-PA, 0.34 g of MX-270, 0.33 g of KBM1403, 4.3 g of GBL, and 2.4 g of EL were mixed and pressure-filtered using a filter with a retention particle size of 1 μm to prepare a positive resin composition containing a photoacid generator (D-1). The fine pattern processability, substrate adhesion, and storage stability of the positive resin composition containing a photoacid generator (D-1) were evaluated according to the evaluation methods (2), (6), and (8) above. [Examples 42 to 61] (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components were as shown in Tables 5-1 and 5-2, and positive resin compositions containing (D-1) photoacid generator were prepared in the same manner as in Example 41. The fine pattern processability, substrate adhesion, and storage stability of the positive resin compositions containing (D-1) photoacid generator were evaluated according to the evaluation methods (2), (6), and (8) above. [Comparative Examples 11 to 15] (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components were as shown in Table 5-2, and positive resin compositions containing (D-1) photoacid generator were prepared in the same manner as in Example 41. The fine pattern processability, substrate adhesion, and storage stability of the positive resin compositions containing (D-1) photoacid generator were evaluated according to the evaluation methods (2), (6), and (8) above.

[0131]

[0132]

[0133] The evaluation results of Examples 41 to 61 and Comparative Examples 11 to 15 are shown in Table 6.

[0134]

[0135] Example 62: Under yellow light, 2.35 g of polyhydroxystyrene (P1), 0.0118 g of organic salt (M1), 0.17 g of CPI-310FG, 3.0 g of TEPIC-VL, 0.20 g of KBM403, and 10 g of GBL were mixed and pressure-filtered using a filter with a retention particle size of 1 μm to prepare a negative resin composition containing a photoacid generator (D-1). The fine pattern processability, substrate adhesion, and storage stability of the negative resin composition containing a photoacid generator (D-1) were evaluated according to the evaluation methods (3), (7), and (8) above. [Examples 63 to 68] (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components were as shown in Table 7. Negative resin compositions containing (D-1) photoacid generator were prepared in the same manner as in Example 62. The positive resin compositions containing (D-1) photoacid generator were evaluated for fine pattern processability, substrate adhesion, and storage stability according to the evaluation methods (3), (7), and (8) above. [Comparative Examples 16 to 18] (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components were as shown in Table 7. Negative resin compositions containing (D-1) photoacid generator were prepared in the same manner as in Example 62. The positive resin compositions containing (D-1) photoacid generator were evaluated for fine pattern processability, substrate adhesion, and storage stability according to the evaluation methods (3), (7), and (8) above.

[0136]

[0137] The evaluation results of Examples 62 to 68 and Comparative Examples 16 to 18 are shown in Table 8.

[0138]

[0139] Cured products obtained by curing the resin composition of the present invention can be used as insulating films and protective films for electronic components, and planarizing layers and pixel dividing layers for display devices. Examples of electronic components include active components having semiconductors such as transistors, diodes, integrated circuits (ICs), and memories, as well as passive components such as resistors, capacitors, and inductors. More specifically, the cured products are suitable for use as passivation films for semiconductors, surface protective films for semiconductor elements, thin film transistors (TFTs), and the like, interlayer insulating films such as interlayer insulating films between rewirings in multilayer wiring for high-density packaging of 2 to 10 layers, insulating films and protective films for touch panel displays, and insulating layers for organic electroluminescent devices. However, various other structures can also be used. Examples of display devices include organic EL display devices having a planarizing layer, a first electrode, a pixel dividing layer, an organic EL layer, and a second electrode on a substrate, with the planarizing layer and / or pixel dividing layer comprising the cured product of the present invention. Taking an active matrix display device as an example, it has TFTs (thin film transistors) and wiring located on the sides of the TFTs and connected to the TFTs on a substrate such as glass or a resin film, and a planarizing layer on top of that to cover the unevenness, with display elements further provided on the planarizing layer. The display elements and wiring are connected via contact holes formed in the planarizing layer.

Claims

1. A resin composition comprising (A) a soluble resin, (B) an organic salt, and (C) a solvent, wherein the (B) organic salt is an organic salt formed from an organic compound having a carboxy group and an organic compound having an amino group, and the (B) organic salt is 0.01 to 10 parts by mass per 100 parts by mass of the (A) soluble resin, and the (B) organic salt contains an organic salt having a structure represented by formula (6) or formula (7), and R 16 in formula (6) and R 18 in formula (7) have a structure represented by formula (8). 【Chemistry 1】 (In formula (6), R 14 represents a tetravalent organic group having 4 to 40 carbon atoms, R 15 represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, and R 16 represents a divalent organic group having 1 to 40 carbon atoms.) (In formula (7), R 17 represents a divalent organic group having 1 to 40 carbon atoms, provided that R 17 does not include a carboxy group or a carboxylic acid ester group. R 18 represents a divalent organic group having 1 to 40 carbon atoms.) 【Chemistry 2】 (In formula (8), R 19 represents a single bond, —O—, —C(CH 3 ) 2 —, or —C(CF 3 ) 2 —; R 20 and R 21 represent a monovalent organic group having 1 to 20 carbon atoms; o and p each independently represent an integer of 1 to 4; q and r each independently represent an integer of 0 to 1; and * represents a chemical bond.)

2. 2. The resin composition according to claim 1, wherein the soluble resin (A) contains at least one soluble resin selected from the group consisting of polyimide, polybenzoxazole, precursors thereof, and copolymers thereof.

3. The resin composition according to claim 1, further comprising (D) a photosensitizer.

4. The (A) soluble resin is A polyimide having a structure represented by formula (1): A polybenzoxazole having a structure represented by formula (3): a polyimide precursor having a structure represented by formula (4), wherein g in formula (4) is 2; A polybenzoxazole precursor having a structure represented by formula (4), wherein g in formula (4) is 0.

2. The resin composition according to claim 1, comprising at least one soluble resin selected from the group consisting of methyl methyl acrylate, methyl meth ... 【Transformation 3】 (In formula (1), R １ represents a tetravalent organic group having 4 to 40 carbon atoms. ２ represents a structure represented by formula (2). (In formula (2), R ３ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ -, and R ４ and R ５ represents a monovalent organic group having 1 to 20 carbon atoms. a and b each independently represent an integer of 1 to 4, and c and d each independently represent an integer of 0 to 1. * represents a chemical bond. 【Chemistry 4】 (In formula (3), R ６ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ It is represented by -. ７ represents a divalent organic group having 4 to 40 carbon atoms. 【Transformation 5】 (In formula (4), R ８ represents a divalent to tetravalent organic group having 4 to 40 carbon atoms. ９ represents a structure represented by formula (5). １０ represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. g represents 0 or 2. (In formula (5), R １１ is a single bond, -O-, -C(CH ３ ) ２ -, -C(CF ３ ) ２ -, and R １２ and R １３ represents a monovalent organic group having 1 to 20 carbon atoms. k and l each independently represent an integer of 1 to 4, and m and n each independently represent an integer of 0 to 1. * represents a chemical bond.

5. R in the formula (8) １９ But -C(CF ３ ) ２ The resin composition according to claim 1, wherein

6. A cured product obtained by curing the resin composition according to any one of claims 1 to 5.

7. An electronic component comprising the cured product according to claim 6.

8. A display device comprising the cured product according to claim 6.

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