Capacitor array

Abstract

A capacitor array 1 includes: a plurality of capacitor units 10 arranged horizontally in a plane direction orthogonal to a thickness direction T; and a sealing part 60 that seals the plurality of capacitor units 10 from both main surface sides that face the thickness direction T of the plurality of capacitor units 10, and that is constituted from an insulating material. The sealing part 60 includes a plurality of sealing layers stacked in the thickness direction T. The plurality of sealing layers includes: a first sealing layer 60A that is positioned closest to the capacitor units 10 in the thickness direction T; and second sealing layers 60B that are positioned more to the opposite side from the capacitor units 10 in the thickness direction T than the first sealing layer 60A, and that constitute both main surfaces that face in the thickness direction T of the sealing part 60.

Description

Capacitor Array

[0001] The present invention relates to a capacitor array.

[0002] Patent Document 1 discloses a capacitor array including a plurality of solid electrolytic capacitor elements formed by dividing a single solid electrolytic capacitor sheet, a sheet-like first sealing layer, and a sheet-like second sealing layer, wherein the solid electrolytic capacitor sheet includes an anode plate made of a valve metal, a porous layer provided on at least one main surface of the anode plate, a dielectric layer provided on the surface of the porous layer, and a cathode layer including a solid electrolyte layer provided on the surface of the dielectric layer, and has first and second main surfaces opposing each other in a thickness direction, wherein the first main surface side of each of the plurality of solid electrolytic capacitor elements is disposed on the first sealing layer, and the second sealing layer is disposed so as to cover the plurality of solid electrolytic capacitor elements on the first sealing layer from the second main surface side, and the solid electrolytic capacitor elements are separated by slit-shaped sheet removal portions.

[0003] Japanese Patent Application Laid-Open No. 2020-167361

[0004] The capacitor array described in Patent Document 1 includes a sealing layer that seals the periphery of a plurality of solid electrolytic capacitor elements. However, the capacitor array described in Patent Document 1 has room for improvement in terms of suppressing warping, distortion, waviness, and the like caused by the sealing layer, i.e., suppressing a decrease in flatness (coplanarity).

[0005] The present invention has been made to solve the above problems, and has an object to provide a capacitor array that can suppress deterioration in flatness.

[0006] The capacitor array of the present invention comprises a plurality of capacitor sections arranged in a plane in a surface direction perpendicular to the thickness direction, and a sealing section made of an insulating material that seals the plurality of capacitor sections from both main surfaces that face the thickness direction of the plurality of capacitor sections, wherein the sealing section is formed by stacking a plurality of sealing layers in the thickness direction, and the plurality of sealing layers include a first sealing layer that is located closest to the capacitor sections in the thickness direction, and a second sealing layer that is located on the opposite side of the capacitor sections from the first sealing layer in the thickness direction and that constitutes both main surfaces that face the thickness direction of the sealing section.

[0007] According to the present invention, it is possible to provide a capacitor array that can suppress deterioration in flatness.

[0008] Fig. 1 is a plan view schematic diagram showing an example of a capacitor array of the present invention. Fig. 2 is a cross-sectional view schematic diagram showing an example of a cross section of the capacitor array shown in Fig. 1 taken along line segment A1-A2. Fig. 3 is a cross-sectional view schematic diagram showing an enlarged view of the area surrounded by the dashed line in Fig. 2. Fig. 4 is a cross-sectional view schematic diagram showing an example of a cross section of the capacitor array shown in Fig. 1 taken along line segment B1-B2. Fig. 5 is a cross-sectional view schematic diagram showing an enlarged view of the area surrounded by the dashed line in Fig. 4. Fig. 6 is a cross-sectional view schematic diagram showing an enlarged view of via conductors and their surroundings in a capacitor array in which the insulating material constituting the second sealing layer contains glass cloth.

[0009] The capacitor array of the present invention will be described below. Note that the present invention is not limited to the following configuration and may be modified as appropriate without departing from the spirit of the present invention. Furthermore, a combination of multiple individual preferred configurations described below also constitutes the present invention.

[0010] The drawings shown below are schematic diagrams, and the dimensions, aspect ratio, scale, etc. may differ from those of the actual product.

[0011] FIG. 1 is a schematic plan view showing an example of a capacitor array of the present invention.

[0012] The capacitor array 1 shown in FIG. 1 has a plurality of capacitor sections 10 .

[0013] The number of capacitor units 10 is not particularly limited as long as it is two or more.

[0014] The plurality of capacitor sections 10 are arranged in a plane in a surface direction perpendicular to the thickness direction T. In the example shown in Fig. 1 , the plurality of capacitor sections 10 are arranged in a plane along a first direction U perpendicular to the thickness direction T and a second direction V perpendicular to the thickness direction T and the first direction U. In other words, the surface direction is a direction that includes the first direction U and the second direction V.

[0015] The plurality of capacitor sections 10 may be arranged in multiple directions as shown in Fig. 1, or may be arranged in one direction. Furthermore, the plurality of capacitor sections 10 may be arranged regularly or irregularly.

[0016] Examples of the planar shape of the capacitor section 10 when viewed from the thickness direction T include a rectangle (square or oblong) as shown in Figure 1, a quadrangle other than a rectangle, a polygon such as a triangle, a pentagon, or a hexagon, a circle, an ellipse, etc.

[0017] The planar shapes of the plurality of capacitor sections 10 when viewed in the thickness direction T may be the same as each other, may be different from each other, or may be partially different from each other.

[0018] The areas of the plurality of capacitor sections 10 when viewed in the thickness direction T may be the same as each other, may be different from each other, or may be partially different from each other.

[0019] Fig. 2 is a schematic cross-sectional view showing an example of a cross section taken along line A1-A2 of the capacitor array shown in Fig. 1. Fig. 3 is a schematic cross-sectional view showing an enlarged view of the area surrounded by the dashed line in Fig. 2. Fig. 4 is a schematic cross-sectional view showing an example of a cross section taken along line B1-B2 of the capacitor array shown in Fig. 1. Fig. 5 is a schematic cross-sectional view showing an enlarged view of the area surrounded by the dashed line in Fig. 4.

[0020] As shown in FIGS. 2, 3, 4, and 5, the capacitor section 10 includes an anode plate 20, a dielectric layer 30, and a cathode layer 40.

[0021] An example of an embodiment in which the capacitor section 10 constitutes an electrolytic capacitor will be described below.

[0022] The anode plate 20 has a core 21 and a porous layer 22 .

[0023] The core 21 is preferably made of a metal, and more preferably made of a valve metal. When the core 21 is made of a valve metal, the anode plate 20 is also called a valve metal substrate.

[0024] Examples of valve metals include simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, and alloys containing at least one of these simple metals. Among these, aluminum or an aluminum alloy is preferred.

[0025] The porous layer 22 is provided on at least one of the two main surfaces of the core portion 21 that face each other in the thickness direction T. That is, the porous layer 22 may be provided on only one main surface of the core portion 21, or may be provided on both main surfaces of the core portion 21 as shown in FIG. 2 and the like. In this way, the anode plate 20 has the porous layer 22 on at least one of the two main surfaces that face each other in the thickness direction T. This increases the surface area of ​​the anode plate 20, which makes it easier to improve the capacity of the capacitor portion 10.

[0026] The porous layer 22 is preferably an etching layer formed by etching the surface of the anode plate 20 .

[0027] The anode plate 20 is preferably in the form of a flat plate, and more preferably in the form of a foil.

[0028] In this specification, the term "plate-like" includes foil-like, sheet-like, film-like, etc., and these are not distinguished by the dimension in the thickness direction.

[0029] The dielectric layer 30 is provided on the surface of the porous layer 22. More specifically, the dielectric layer 30 is provided along the surface (outline) of each pore present in the porous layer 22.

[0030] The dielectric layer 30 is preferably made of an oxide film of the valve metal described above. For example, when the anode plate 20 is made of aluminum foil, the oxide film that becomes the dielectric layer 30 is formed by anodizing the anode plate 20 in an aqueous solution containing ammonium adipate or the like (also called chemical conversion treatment). Since the dielectric layer 30 is formed along the surface of the porous layer 22, the dielectric layer 30 has pores (recesses).

[0031] The cathode layer 40 is provided on the surface of the dielectric layer 30 .

[0032] The cathode layer 40 preferably has a solid electrolyte layer 41 provided on the surface of the dielectric layer 30, and a conductor layer 42 provided on the surface of the solid electrolyte layer 41. When the cathode layer 40 has the solid electrolyte layer 41, the capacitor section 10 constitutes a solid electrolytic capacitor.

[0033] The solid electrolyte layer 41 preferably has an inner layer provided inside the pores of the dielectric layer 30 and an outer layer covering the inner layer.

[0034] Examples of materials constituting the solid electrolyte layer 41 include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene) (PEDOT) is particularly preferred. The conductive polymer may also contain a dopant such as polystyrene sulfonate (PSS).

[0035] The solid electrolyte layer 41 is formed in a predetermined region on the surface of the dielectric layer 30 by, for example, a method of applying a dispersion of a conductive polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 30 and drying it, or a method of forming a polymerized film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 30 using a treatment liquid containing a polymerizable monomer such as 3,4-ethylenedioxythiophene.

[0036] The conductor layer 42 preferably has a conductive resin layer 42A provided on the surface of the solid electrolyte layer 41, and a metal layer 42B provided on the surface of the conductive resin layer 42A.

[0037] The conductive resin layer 42A may be, for example, a conductive adhesive layer containing at least one conductive filler selected from the group consisting of copper filler, silver filler, nickel filler, and carbon filler.

[0038] The metal layer 42B preferably contains a metal filler.

[0039] The metal filler is preferably at least one selected from the group consisting of a copper filler, a silver filler, and a nickel filler.

[0040] The metal layer 42B may be, for example, a metal plating film, a metal foil, etc. In this case, the metal layer 42B is preferably made of at least one metal selected from the group consisting of copper, silver, nickel, and alloys containing at least one of these metals as a main component.

[0041] In this specification, the term "major component" means the element component that occupies the largest weight ratio.

[0042] The conductive layer 42 may have, for example, a carbon layer as the conductive resin layer 42A and a copper layer as the metal layer 42B.

[0043] The carbon layer is formed in a predetermined region by, for example, applying a carbon paste containing a carbon filler to the surface of the solid electrolyte layer 41 by a sponge transfer method, a screen printing method, a dispenser coating method, an inkjet printing method, or the like.

[0044] The copper layer is formed in a predetermined region by applying a copper paste containing a copper filler to the surface of the carbon layer by a sponge transfer method, a screen printing method, a spray coating method, a dispenser coating method, an inkjet printing method, or the like.

[0045] The conductive layer 42 may have at least one of a conductive resin layer 42A and a metal layer 42B. That is, the conductive layer 42 may have only the conductive resin layer 42A, or only the metal layer 42B, or may have both the conductive resin layer 42A and the metal layer 42B as shown in FIG. 2 etc.

[0046] It is preferable that the capacitor section 10 further includes a mask layer 50 provided on the periphery of the porous layer 22 when viewed in the thickness direction T. In this case, insulation between the anode plate 20 and the cathode layer 40 is ensured, and a short circuit between them is prevented.

[0047] The mask layer 50 is preferably provided on the entire periphery of the porous layer 22. However, the mask layer 50 may be provided on only a part of the periphery of the porous layer 22.

[0048] It is preferable that the mask layer 50 is arranged to extend inward from at least one of the two main surfaces of the anode plate 20 in the thickness direction T, and it is more preferable that it is arranged to extend inward from both main surfaces of the anode plate 20.

[0049] The mask layer 50 may or may not be in contact with the core 21 in the thickness direction T.

[0050] The mask layer 50 may be provided not only inside the porous layer 22 but also outside the porous layer 22. In this case, the mask layer 50 may be provided on the surface of the filled porous layer 22 while filling the inside of the porous layer 22. In other words, the dimension of the mask layer 50 in the thickness direction T may be larger than the dimension of the porous layer 22 in the thickness direction T.

[0051] When the mask layer 50 is provided outside the porous layer 22 , the mask layer 50 is preferably provided in a region surrounding the cathode layer 40 when viewed in the thickness direction T.

[0052] When viewed from the thickness direction T, the mask layer 50 may be partially overlapped with the cathode layer 40 , or may not be entirely overlapped with the cathode layer 40 .

[0053] The mask layer 50 is made of an insulating material.

[0054] Examples of insulating materials that can be used to form the mask layer 50 include polyphenylsulfone (PPS), polyethersulfone (PES), cyanate ester resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), a composition consisting of soluble polyimide siloxane and epoxy resin, polyimide resin, polyamide-imide resin, derivatives or precursors of these, etc.

[0055] The mask layer 50 is formed on the periphery of the porous layer 22, for example, by applying the above-mentioned insulating material to a position that overlaps the periphery of the porous layer 22 on both main surfaces of the anode plate 20 and allowing it to penetrate from both main surfaces of the anode plate 20 toward the inside.

[0056] The mask layer 50 may be formed on the porous layer 22 either before or after the dielectric layer 30 is formed.

[0057] The capacitor array 1 shown in FIGS. 2 and 4 further includes a sealing portion 60 in addition to the plurality of capacitor portions 10 .

[0058] The sealing portion 60 seals the plurality of capacitor portions 10 from both main surface sides that face each other in the thickness direction T of the plurality of capacitor portions 10. In this way, the plurality of capacitor portions 10 are protected by the sealing portion 60.

[0059] The sealing portion 60 is made of an insulating material, that is, the sealing portion 60 functions as an insulating portion.

[0060] The sealing portion 60 is formed by stacking a plurality of sealing layers in the thickness direction T.

[0061] The multiple sealing layers constituting the sealing unit 60 include a first sealing layer 60A and a second sealing layer 60B. In the example shown in Fig. 2 etc., the sealing unit 60 is formed by stacking the first sealing layer 60A and the second sealing layer 60B in order from the capacitor unit 10 side in the thickness direction T. That is, in the example shown in Fig. 2 etc., the second sealing layer 60B is adjacent to the first sealing layer 60A on the side opposite to the capacitor unit 10.

[0062] Of the multiple sealing layers, first sealing layer 60A is located closest to capacitor section 10 in thickness direction T. Therefore, first sealing layer 60A functions as a sealing layer that conforms to the surface shape of capacitor section 10.

[0063] Second sealing layer 60B is located on the opposite side of first sealing layer 60A from capacitor section 10 in thickness direction T, and forms both main surfaces of sealing section 60 that face each other in thickness direction T. In other words, second sealing layer 60B is located on the outermost surface of sealing section 60. Therefore, second sealing layer 60B functions as a sealing layer that flattens both main surfaces of sealing section 60, and therefore both main surfaces of capacitor array 1.

[0064] In the capacitor array 1, the first sealing layer 60A in the sealing portion 60 mainly plays the role of sealing the capacitor portion 10, and the second sealing layer 60B mainly plays the role of flattening both main surfaces of the sealing portion 60, and therefore both main surfaces of the capacitor array 1. Therefore, in the capacitor array 1 in which the sealing portion 60 is composed of multiple sealing layers including the first sealing layer 60A and the second sealing layer 60B, warping, distortion, undulation, etc. caused by the sealing portion 60 are less likely to occur compared to a capacitor array in which the sealing portion is composed of only one sealing layer.

[0065] As described above, the capacitor array 1 can suppress the occurrence of warping, distortion, undulation, etc., and therefore can suppress the deterioration of flatness.

[0066] The sealing portion 60 only needs to include at least the first sealing layer 60A and the second sealing layer 60B, and may further include at least one sealing layer between the first sealing layer 60A and the second sealing layer 60B.

[0067] The insulating material forming first sealing layer 60A may contain an insulating resin.

[0068] Examples of insulating resins contained in the insulating material that forms the first sealing layer 60A include epoxy resins, phenolic resins, and polyimide resins.

[0069] The insulating material that forms first sealing layer 60A may further contain an inorganic filler.

[0070] Examples of inorganic fillers contained in the insulating material that forms first sealing layer 60A include silica fillers and alumina fillers.

[0071] The median diameter D of the inorganic filler contained in the insulating material that constitutes the first sealing layer 60A ５０ In this case, first sealing layer 60A can easily conform to the surface shape of capacitor section 10 even if it contains an inorganic filler.

[0072] The median diameter D of the inorganic filler contained in the insulating material that constitutes the first sealing layer 60A ５０ is preferably 0.1 μm or more.

[0073] Median diameter D of inorganic filler contained in the insulating material constituting the sealing layer ５０ is determined as follows. First, the capacitor array is cut, polished, or the like to produce a cross section along the thickness direction where the target sealing layer is exposed, in this case, a cross section along the thickness direction where the first sealing layer is exposed, as shown in FIG. 2 . Next, an image of the cross section is taken using a scanning electron microscope (SEM) or the like. Subsequently, in the taken cross-sectional image, the presence region of the first sealing layer and further the presence region of the inorganic filler present inside the first sealing layer are confirmed using an analysis method such as energy dispersive X-ray analysis (EDX). Then, image analysis of the cross-sectional image is performed to measure the equivalent circle diameter of the inorganic filler present inside the first sealing layer, and the obtained equivalent circle diameter is defined as the particle size of the inorganic filler. Thereafter, a number-based cumulative particle size distribution is calculated from the obtained particle size of the inorganic filler, and the particle size at which the cumulative probability in the number-based cumulative particle size distribution is 50% is defined as the median diameter D of the inorganic filler. ５０ It is stipulated that:

[0074] The first sealing layer 60A is formed to seal the capacitor section 10 from both main surfaces of the capacitor section 10, for example, by a method of thermocompressing an insulating resin sheet, or by applying an insulating resin paste and then thermally curing it.

[0075] The insulating material forming second sealing layer 60B may contain an insulating resin.

[0076] Examples of insulating resins contained in the insulating material constituting the second sealing layer 60B include epoxy resins, phenolic resins, and polyimide resins.

[0077] The insulating materials constituting the first sealing layer 60A and the second sealing layer 60B preferably contain different insulating resins.

[0078] In this specification, "the insulating materials constituting the multiple sealing layers contain different insulating resins" means that the insulating materials constituting the multiple sealing layers at least have different types of insulating resin, and preferably means that in addition to the types of insulating resin, the ratio of the content of the insulating resin to the total amount of insulating material is different.

[0079] Since the insulating materials constituting the first sealing layer 60A and the second sealing layer 60B contain different insulating resins, the first sealing layer 60A and the second sealing layer 60B tend to have different properties.

[0080] As described above, in the capacitor array 1, the first sealing layer 60A mainly plays the role of sealing the capacitor section 10 in the sealing section 60, and the second sealing layer 60B mainly plays the role of flattening both main surfaces of the sealing section 60, and therefore both main surfaces of the capacitor array 1. Therefore, it is preferable that the first sealing layer 60A and the second sealing layer 60B have different properties.

[0081] The insulating materials constituting the first sealing layer 60A and the second sealing layer 60B may contain the same insulating resin.

[0082] In this specification, "the insulating materials constituting the multiple sealing layers contain the same insulating resin" means that the insulating materials constituting the multiple sealing layers at least contain the same type of insulating resin, and preferably means that in addition to the type of insulating resin, the proportion of the insulating resin content relative to the total amount of insulating material is the same.

[0083] The insulating material forming second sealing layer 60B may further contain an inorganic filler.

[0084] Examples of inorganic fillers contained in the insulating material that forms second sealing layer 60B include silica fillers and alumina fillers.

[0085] The inorganic fillers contained in the insulating materials constituting first sealing layer 60A and second sealing layer 60B may be the same or different from each other at least in terms of type.

[0086] Median diameter D of inorganic filler contained in the insulating material constituting first sealing layer 60A and second sealing layer 60B ５０ may be the same as each other or may be different from each other.

[0087] In first sealing layer 60A and second sealing layer 60B, the ratio of the content of the inorganic filler to the total amount of the insulating material may be the same as or different from each other.

[0088] The insulating material constituting second sealing layer 60B may further contain glass cloth. In this case, the rigidity of second sealing layer 60B is likely to be improved, which makes it easier to maintain the flatness of second sealing layer 60B. As a result, the flatness of capacitor array 1 is likely to be maintained.

[0089] Examples of insulating materials containing glass cloth include prepregs.

[0090] For example, after first sealing layer 60A is formed by the above-described method, second sealing layer 60B is formed adjacent to first sealing layer 60A on the side opposite capacitor section 10 by a method such as thermocompression bonding an insulating resin sheet or applying an insulating resin paste and then thermally curing it. When second sealing layer 60B is formed on first sealing layer 60A by a build-up method in this manner, there is no need to soften the already formed first sealing layer 60A by heat treatment when forming second sealing layer 60B. Therefore, when second sealing layer 60B is formed, first sealing layer 60A and second sealing layer 60B are not integrated, and an interface exists between first sealing layer 60A and second sealing layer 60B.

[0091] From the viewpoint of realizing a state in which an interface exists between the first sealing layer 60A and the second sealing layer 60B, it is preferable that the glass transition temperature of the insulating material constituting the second sealing layer 60B is lower than the glass transition temperature of the insulating material constituting the first sealing layer 60A.

[0092] The glass transition temperature of the insulating material constituting second sealing layer 60B may be the same as or higher than the glass transition temperature of the insulating material constituting first sealing layer 60A. When the glass transition temperature of the insulating material constituting second sealing layer 60B is higher than the glass transition temperature of the insulating material constituting first sealing layer 60A, the flatness of both main surfaces of sealing portion 60 formed by second sealing layer 60B, and therefore both main surfaces of capacitor array 1, is more likely to be maintained even when heat treatment is performed during the manufacturing process of capacitor array 1, compared to when the glass transition temperature of the insulating material constituting second sealing layer 60B is equal to or lower than the glass transition temperature of the insulating material constituting first sealing layer 60A.

[0093] The glass transition temperature of the insulating material constituting the sealing layer is measured by simultaneous thermogravimetry and differential thermal analysis (TG-DTA) or differential scanning calorimetry (DSC).

[0094] The linear expansion coefficient of second sealing layer 60B in the thickness direction T is preferably smaller than the linear expansion coefficient of first sealing layer 60A in the thickness direction T. When the linear expansion coefficient of second sealing layer 60B in the thickness direction T is smaller than the linear expansion coefficient of first sealing layer 60A in the thickness direction T, the flatness of both main surfaces of sealing portion 60 formed by second sealing layer 60B, and therefore both main surfaces of capacitor array 1, is more likely to be maintained even when heat treatment is performed during the manufacturing process of capacitor array 1, compared to when the linear expansion coefficient of second sealing layer 60B in the thickness direction T is equal to or greater than the linear expansion coefficient of first sealing layer 60A in the thickness direction T.

[0095] The linear expansion coefficient of the second sealing layer 60B in the thickness direction T may be the same as the linear expansion coefficient of the first sealing layer 60A in the thickness direction T, or may be greater than the linear expansion coefficient of the first sealing layer 60A in the thickness direction T.

[0096] The linear expansion coefficient in the thickness direction of the sealing layer is measured by thermomechanical analysis (TMA).

[0097] First sealing layer 60A preferably has first insulating portion 61 that covers both main surfaces of multiple capacitor portions 10. In the example shown in FIG. 2 etc., first insulating portion 61 covers cathode layer 40 and mask layer 50 that constitute both main surfaces of multiple capacitor portions 10.

[0098] The first insulating portion 61 overlaps a plurality of capacitor portions 10 when viewed in the thickness direction T.

[0099] In the region on one of the two main surfaces of the sealing portion 60, it is preferable that the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A and the maximum dimension db1 in the thickness direction T of the second sealing layer 60B are different from each other.

[0100] In a region on one of the two main surfaces of the sealing portion 60, the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A is preferably larger than the maximum dimension db1 in the thickness direction T of the second sealing layer 60B. In this case, the first insulating portion 61 conforms to the surface shape of the capacitor portion 10, and it becomes easy to flatten the main surface of the first insulating portion 61 on the side opposite to the capacitor portion 10. As a result, it becomes easy to flatten both main surfaces of the sealing portion 60, and ultimately both main surfaces of the capacitor array 1.

[0101] In the region on one of the two main surfaces of the sealing portion 60, it is preferable that the ratio (da1 / db1) of the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A to the maximum dimension db1 in the thickness direction T of the second sealing layer 60B is 110% or more.

[0102] In the region on one of the two main surfaces of the sealing portion 60, it is preferable that the ratio (da1 / db1) of the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A to the maximum dimension db1 in the thickness direction T of the second sealing layer 60B is 500% or less.

[0103] In a region on one of the two main surfaces of the sealing portion 60, the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A is preferably 5 μm or more.

[0104] In a region on one of the two main surfaces of the sealing portion 60, the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A is preferably 100 μm or less.

[0105] In a region on one of the two main surfaces of sealing portion 60, second sealing layer 60B preferably has a maximum dimension db1 in thickness direction T of 100 μm or less.

[0106] In a region on one of the two main surfaces of sealing portion 60, second sealing layer 60B preferably has a maximum dimension db1 in thickness direction T of 5 μm or more.

[0107] In a region on one of the two main surfaces of sealing portion 60, the ratio (da2 / da1) of the minimum dimension da2 in the thickness direction T of first insulating portion 61 of first sealing layer 60A to the maximum dimension da1 in the thickness direction T of first insulating portion 61 of first sealing layer 60A may be 50% or less. In this case, it can be said that a large step exists on one main surface of capacitor portion 10 located on the one main surface side of sealing portion 60. In contrast, in capacitor array 1, even if a large step exists on one main surface of capacitor portion 10, the multiple sealing layers including first sealing layer 60A and second sealing layer 60B can suppress a decrease in flatness of capacitor array 1.

[0108] In the region on one of the two main surfaces of the sealing portion 60, the ratio (da2 / da1) of the minimum dimension da2 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A to the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A may be 5% or more.

[0109] The maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A corresponds to the maximum dimension in the thickness direction T of the portion of the first sealing layer 60A that overlaps with the plurality of capacitor units 10 when viewed from the thickness direction T. In the example shown in Figures 3 and 5, the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A corresponds to the distance in the thickness direction T between the main surface of the first insulating portion 61 opposite the capacitor unit 10 and the main surface of the mask layer 50 opposite the anode plate 20.

[0110] The minimum dimension da2 in the thickness direction T of first insulating portion 61 of first sealing layer 60A corresponds to the minimum dimension in the thickness direction T of a portion of first sealing layer 60A that overlaps multiple capacitor units 10 when viewed from the thickness direction T. In the example shown in Figures 3 and 5 , the minimum dimension da2 in the thickness direction T of first insulating portion 61 of first sealing layer 60A corresponds to the distance in the thickness direction T between the main surface of first insulating portion 61 opposite to capacitor unit 10 and the main surface of cathode layer 40 opposite to anode plate 20, in this case, the main surface of conductor layer 42 opposite to anode plate 20.

[0111] The maximum dimension db1 in the thickness direction T of the second sealing layer 60B corresponds to the maximum distance in the thickness direction T between the main surface of the second sealing layer 60B opposite the capacitor section 10 and the main surface of the second sealing layer 60B on the capacitor section 10 side.

[0112] The maximum and minimum dimensions of the sealing layer in the thickness direction are determined as follows. First, the capacitor array is cut, polished, or the like to produce a cross section along the thickness direction in which the target sealing layer is exposed. In this case, the cross section along the thickness direction in which the first sealing layer and the second sealing layer are exposed, as shown in FIG. 2 . Next, an image of the cross section is captured using a scanning electron microscope or the like. Next, the presence area of ​​the first insulating portion of the first sealing layer and the presence area of ​​the second sealing layer are confirmed in the captured cross-sectional image using an analysis method such as energy dispersive X-ray analysis. Then, image analysis of the cross-sectional image is performed to measure the maximum dimension of the first insulating portion of the first sealing layer in the thickness direction, the minimum dimension of the first insulating portion of the first sealing layer in the thickness direction, and the maximum dimension of the second sealing layer in the thickness direction.

[0113] The above describes the maximum dimension in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A, the minimum dimension in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A, and the maximum dimension in the thickness direction T of the second sealing layer 60B in the region on one of the two main surfaces of the sealing portion 60, but it is preferable that the same dimension also applies to the region on the other of the two main surfaces of the sealing portion 60.

[0114] It is preferable that first sealing layer 60A further includes a second insulating portion 62 that separates each of the plurality of capacitor portions 10. In the example shown in Fig. 2, second insulating portion 62 is filled between two capacitor portions 10 so as to separate each of the two capacitor portions 10.

[0115] It is preferable that the first sealing layer 60A further includes a third insulating portion 63 that penetrates each of the plurality of capacitor portions 10 in the thickness direction T. In the example shown in FIG. 2 etc., the third insulating portion 63 penetrates the anode plate 20 and the mask layer 50 of each of the plurality of capacitor portions 10 in the thickness direction T.

[0116] When the first sealing layer 60A has a first insulating portion 61, a second insulating portion 62, and a third insulating portion 63, the first insulating portion 61, the second insulating portion 62, and the third insulating portion 63 are arranged to follow the surface shape of the capacitor portion 10.

[0117] When the first sealing layer 60A has the first insulating portion 61, the second insulating portion 62, and the third insulating portion 63, the first insulating portion 61, the second insulating portion 62, and the third insulating portion 63 may be integrated, and the interfaces between the respective insulating portions may not be exposed, as shown in Fig. 2 etc. Alternatively, the first insulating portion 61, the second insulating portion 62, and the third insulating portion 63 may not be integrated, and the interfaces between the respective insulating portions may be exposed.

[0118] The capacitor array 1 preferably further includes a through-hole conductor 70A.

[0119] The through-hole conductor 70A penetrates the capacitor portion 10 and the sealing portion 60 in the thickness direction T. In the example shown in FIG. 2 etc., the through-hole conductor 70A penetrates not only the capacitor portion 10 but also the first insulating portion 61 of the first sealing layer 60A and the second sealing layer 60B in the thickness direction T.

[0120] The through-hole conductor 70A is preferably provided on at least the inner wall surface of the through hole 71A that penetrates the capacitor portion 10 and the sealing portion 60 in the thickness direction T. In the example shown in Fig. 2 etc., the through-hole conductor 70A is provided on the inner wall surface of the through hole 71A, rather than filling the entire interior of the through hole 71A.

[0121] The through-hole conductor 70A is preferably electrically connected to the anode plate 20 at the inner wall surface of the through hole 71A. More specifically, the through-hole conductor 70A is preferably electrically connected to the end surface of the anode plate 20 that faces the inner wall surface of the through hole 71A in the planar direction. This allows the anode plate 20 to be electrically led out to the outside via the through-hole conductor 70A.

[0122] It is preferable that the core 21 and the porous layer 22 are exposed on the end surface of the anode plate 20 that is electrically connected to the through-hole conductor 70A. In this case, the porous layer 22 as well as the core 21 are electrically connected to the through-hole conductor 70A.

[0123] When viewed from the thickness direction T, it is preferable that the through-hole conductor 70A is electrically connected to the anode plate 20 along the entire circumference of the through-hole 71A. In this case, the connection resistance between the anode plate 20 and the through-hole conductor 70A is likely to decrease, and therefore the equivalent series resistance (ESR) of the capacitor portion 10 is likely to decrease.

[0124] The through-hole conductor 70A is formed, for example, as follows. First, a through-hole 71A is formed by drilling, laser processing, or the like, penetrating the capacitor section 10 and the sealing section 60 in the thickness direction T. The inner wall surface of the through-hole 71A is then metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the through-hole conductor 70A. When forming the through-hole conductor 70A, for example, metallizing the inner wall surface of the through-hole 71A with an electroless copper plating process, an electrolytic copper plating process, or the like can facilitate processing. Note that the method of forming the through-hole conductor 70A may include filling the through-hole 71A with a metal material, a composite material of metal and resin, or the like, in addition to metallizing the inner wall surface of the through-hole 71A.

[0125] The capacitor array 1 preferably further includes an anode connection layer 72 provided between the anode plate 20 and the through-hole conductor 70A in the planar direction. In the example shown in Fig. 2, the anode connection layer 72 contacts both the anode plate 20 and the through-hole conductor 70A.

[0126] Since the anode connection layer 72 is provided between the anode plate 20 and the through-hole conductor 70A in the surface direction, the anode connection layer 72 functions as a barrier layer for the anode plate 20, more specifically, as a barrier layer for the core portion 21 and the porous layer 22. When the anode connection layer 72 functions as a barrier layer for the anode plate 20, dissolution of the anode plate 20 that occurs during chemical treatment to form the external electrode layer 80A, etc., described below, is suppressed, and therefore penetration of the chemical solution into the capacitor portion 10 is suppressed, which tends to improve the reliability of the capacitor array 1.

[0127] The anode plate 20 and the through-hole conductor 70A are preferably electrically connected via an anode connecting layer 72 .

[0128] The dimension of the anode connecting layer 72 in the thickness direction T is preferably larger than the dimension of the anode plate 20 in the thickness direction T. In this case, the entire end face of the anode plate 20 is covered with the anode connecting layer 72, which tends to improve the barrier property of the anode connecting layer 72 against the anode plate 20.

[0129] The dimension of the anode connecting layer 72 in the thickness direction T is preferably greater than 100% and less than 200% of the dimension of the anode plate 20 in the thickness direction T.

[0130] The dimension of the anode connection layer 72 in the thickness direction T may be the same as the dimension of the anode plate 20 in the thickness direction T, or may be smaller than the dimension of the anode plate 20 in the thickness direction T.

[0131] When viewed from the thickness direction T, the through-hole conductor 70A is preferably connected to the anode connection layer 72 along the entire periphery of the through-hole 71A. In this case, the contact area between the through-hole conductor 70A and the anode connection layer 72 is increased, which tends to reduce the connection resistance between the through-hole conductor 70A and the anode connection layer 72. As a result, the connection resistance between the anode plate 20 and the through-hole conductor 70A tends to decrease, which tends to reduce the equivalent series resistance of the capacitor section 10. Furthermore, the adhesion between the through-hole conductor 70A and the anode connection layer 72 is likely to improve, which reduces the likelihood of problems such as peeling between the through-hole conductor 70A and the anode connection layer 72 due to thermal stress.

[0132] The anode connection layer 72 preferably includes a layer containing nickel as a main component. In this case, damage to the metal (e.g., aluminum) constituting the anode plate 20 is reduced, and the barrier properties of the anode connection layer 72 against the anode plate 20 are likely to be improved.

[0133] In addition, the anode connection layer 72 does not have to be provided between the anode plate 20 and the through-hole conductor 70A in the surface direction. In this case, the through-hole conductor 70A may be directly connected to the end surface of the anode plate 20.

[0134] The capacitor array 1 preferably further includes an external electrode layer 80A electrically connected to the through-hole conductors 70A. In the example shown in Fig. 2 etc., the external electrode layer 80A is provided on the surface of the through-hole conductors 70A and functions as a connection terminal for the capacitor array 1 (capacitor section 10). In the example shown in Fig. 2 etc., the external electrode layer 80A is electrically connected to the anode plate 20 via the through-hole conductors 70A and functions as a connection terminal for the anode plate 20.

[0135] Examples of materials constituting the external electrode layer 80A include metal materials containing low-resistance metals such as silver, gold, copper, etc. In this case, the external electrode layer 80A is formed by, for example, plating the surface of the through-hole conductor 70A.

[0136] In order to improve the adhesion between the external electrode layer 80A and other components, in this case, the adhesion between the external electrode layer 80A and the through-hole conductor 70A, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler and resin may be used as the constituent material of the external electrode layer 80A.

[0137] The capacitor array 1 preferably further includes a resin-filled portion 90A formed by filling the through-hole 71A with a resin material. In the example shown in Fig. 2, the resin-filled portion 90A is provided in a space surrounded by the through-hole conductor 70A on the inner wall surface of the through-hole 71A. The provision of the resin-filled portion 90A eliminates the space within the through-hole 71A, thereby suppressing delamination of the through-hole conductor 70A.

[0138] The thermal expansion coefficient of resin filling portion 90A is preferably higher than that of through-hole conductor 70A. More specifically, the thermal expansion coefficient of the resin material filling through hole 71A is preferably higher than that of the constituent material (e.g., copper) of through-hole conductor 70A. In this case, resin filling portion 90A, more specifically, the resin material filling through hole 71A, expands in a high-temperature environment, pressing through-hole conductor 70A against the inner wall surface of through hole 71A from the inside to the outside of through hole 71A, thereby sufficiently suppressing delamination of through-hole conductor 70A.

[0139] The thermal expansion coefficient of resin filling portion 90A may be the same as or lower than that of through-hole conductor 70A. More specifically, the thermal expansion coefficient of the resin material filled in through hole 71A may be the same as or lower than that of the constituent material of through-hole conductor 70A.

[0140] The capacitor array 1 does not necessarily have to have the resin filling portion 90A. In this case, it is preferable that the through-hole conductor 70A is provided not only on the inner wall surface of the through hole 71A but also throughout the entire interior of the through hole 71A.

[0141] The capacitor array 1 preferably further includes a through-hole conductor 70B.

[0142] The through-hole conductor 70B penetrates the capacitor portion 10 and the sealing portion 60, more precisely, the sealing portion 60 in the thickness direction T. In the example shown in FIG. 2 etc., the through-hole conductor 70B penetrates the third insulating portion 63 of the first sealing layer 60A and the second sealing layer 60B.

[0143] The through-hole conductor 70B is preferably provided on at least the inner wall surface of a through hole 71B that penetrates the capacitor portion 10 and the sealing portion 60, more precisely, the sealing portion 60 in the thickness direction T. In the example shown in Fig. 2 etc., the through-hole conductor 70B is provided not in the entire interior of the through hole 71B but on the inner wall surface of the through hole 71B.

[0144] The through-hole conductor 70B is formed, for example, as follows. First, a through-hole penetrating the capacitor unit 10 in the thickness direction T is formed by drilling, laser processing, or the like. Next, the first sealing layer 60A is formed to seal the capacitor unit 10 from both main surfaces thereof, thereby forming a third insulating portion 63 in which an insulating material is filled in the through-hole. Furthermore, the second sealing layer 60B is formed adjacent to the first sealing layer 60A on the side opposite the capacitor unit 10. Then, the third insulating portion 63 of the first sealing layer 60A and the second sealing layer 60B are drilled, laser processing, or the like to form the through-hole 71B. At this time, the diameter of the through-hole 71B is made smaller than the diameter of the third insulating portion 63, so that the third insulating portion 63 is provided between the inner wall surface of the previously formed through-hole and the inner wall surface of the through-hole 71B in the surface direction. Thereafter, the inner wall surface of through hole 71B is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming through-hole conductor 70B. When forming through-hole conductor 70B, for example, metallizing the inner wall surface of through hole 71B with electroless copper plating, electrolytic copper plating, or the like facilitates processing. Note that, in addition to the method of metallizing the inner wall surface of through hole 71B, the method of forming through-hole conductor 70B may also be a method of filling through hole 71B with a metal material, a composite material of metal and resin, or the like.

[0145] As described above, when through-hole conductor 70B is provided so as to penetrate third insulating portion 63 of first sealing layer 60A in thickness direction T, third insulating portion 63 is provided in the planar direction between capacitor portion 10 and through-hole conductor 70B, and further between anode plate 20 and through-hole conductor 70B. In the example shown in Fig. 2 etc., third insulating portion 63 is in contact with both capacitor portion 10 and through-hole conductor 70B, and further with both anode plate 20 and through-hole conductor 70B.

[0146] Since the third insulating portion 63 of the first sealing layer 60A is provided in the planar direction between the capacitor portion 10 and the through-hole conductor 70B, and further between the anode plate 20 and the through-hole conductor 70B, insulation between the anode plate 20 and the through-hole conductor 70B, and further between the anode plate 20 and the cathode layer 40, is ensured, and short circuits between the two are prevented.

[0147] 2, etc., it is preferable that the core 21 and the porous layer 22 are exposed on the end face of the anode plate 20 that is in contact with the third insulating portion 63. In this case, the contact area between the porous layer 22 and the third insulating portion 63 is increased, thereby improving adhesion between them, and thus problems such as peeling between the porous layer 22 and the third insulating portion 63 are less likely to occur.

[0148] When the core 21 and the porous layer 22 are exposed on the end face of the anode plate 20 that contacts the third insulating portion 63 of the first sealing layer 60A, it is preferable that the mask layer 50 be provided around the through-hole conductor 70B, with the constituent material of the mask layer 50 penetrating into the pores of the porous layer 22 and thereby spreading into the interior of the porous layer 22. In this case, sufficient insulation is ensured between the anode plate 20 and the through-hole conductor 70B, and further, sufficient insulation is ensured between the anode plate 20 and the cathode layer 40, sufficiently preventing short circuits between them.

[0149] When the core 21 and the porous layer 22 are exposed on the end surface of the anode plate 20 that contacts the third insulating portion 63 of the first sealing layer 60A, it is preferable that the insulating material that constitutes the third insulating portion 63 penetrates into the pores of the porous layer 22. In this case, the mechanical strength of the porous layer 22 is improved, and the occurrence of delamination due to the pores in the porous layer 22 is suppressed.

[0150] The thermal expansion coefficient of the third insulating portion 63 of the first sealing layer 60A is preferably higher than that of the through-hole conductors 70B. More specifically, the thermal expansion coefficient of the insulating material constituting the third insulating portion 63 is preferably higher than that of the material (e.g., copper) constituting the through-hole conductors 70B. In this case, the third insulating portion 63, more specifically, the insulating material constituting the third insulating portion 63, expands in a high-temperature environment, thereby pressing down on the porous layer 22 and the through-hole conductors 70B, thereby sufficiently suppressing the occurrence of delamination.

[0151] The thermal expansion coefficient of third insulating portion 63 of first sealing layer 60A may be the same as or lower than that of through-hole conductor 70B. More specifically, the thermal expansion coefficient of the insulating material constituting third insulating portion 63 may be the same as or lower than that of the material constituting through-hole conductor 70B.

[0152] The capacitor array 1 preferably further includes an external electrode layer 80B electrically connected to the through-hole conductor 70B. In the example shown in Fig. 2, the external electrode layer 80B is provided on the surface of the through-hole conductor 70B and functions as a connection terminal of the capacitor array 1 (capacitor section 10).

[0153] Examples of materials constituting the external electrode layer 80B include metal materials containing low-resistance metals such as silver, gold, copper, etc. In this case, the external electrode layer 80B is formed by, for example, plating the surfaces of the through-hole conductors 70B.

[0154] In order to improve the adhesion between the external electrode layer 80B and other components, in this case, the adhesion between the external electrode layer 80B and the through-hole conductor 70B, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler and resin may be used as the constituent material of the external electrode layer 80B.

[0155] The constituent materials of the external electrode layer 80A and the external electrode layer 80B are preferably the same at least in terms of type, but may be different from each other.

[0156] In the example shown in FIG. 1 , each of the plurality of capacitor sections 10 is provided with an external electrode layer 80A electrically connected to the anode plate 20 and an external electrode layer 80B electrically connected to the cathode layer 40, but at least one of the external electrode layer 80A and the external electrode layer 80B may be provided in common among the plurality of capacitor sections 10.

[0157] In the example shown in FIG. 2 and other figures, the external electrode layer 80A and the external electrode layer 80B are provided on both main surfaces of the sealing portion 60, but they may also be provided on only one main surface of the sealing portion 60.

[0158] It is preferable that the capacitor array 1 further includes via conductors 73 that penetrate the sealing portion 60 in the thickness direction T and are connected to the cathode layer 40 and the external electrode layer 80B. In the example shown in Fig. 2 etc., the via conductors 73 penetrate the first insulating portion 61 of the first sealing layer 60A and the second sealing layer 60B in the thickness direction T and are connected to the cathode layer 40 and the external electrode layer 80B.

[0159] Examples of materials that can be used to form the via conductors 73 include metal materials containing low-resistance metals such as silver, gold, and copper.

[0160] The via conductor 73 is formed, for example, by plating the inner wall surface of a through hole that penetrates the first insulating portion 61 of the first sealing layer 60A and the second sealing layer 60B in the thickness direction T with the above-mentioned metal material, or by filling it with a conductive paste and then performing a heat treatment.

[0161] When via conductor 73 is formed by the above-described method, stress may concentrate on a position on the external electrode layer 80B side of the via conductor 73, which may cause cracks to occur in via conductor 73. In contrast, as described above, if the insulating material constituting second sealing layer 60B contains glass cloth, the occurrence of cracks in via conductor 73 is suppressed as follows.

[0162] FIG. 6 is an enlarged schematic cross-sectional view of a via conductor and its surroundings in a capacitor array in which the insulating material constituting the second sealing layer contains glass cloth.

[0163] When the insulating material constituting the second sealing layer 60B contains glass cloth, the glass cloth G tends to protrude inward in the planar direction from the inner wall surface of the portion of the through hole penetrating the second sealing layer 60B in which the via conductor 73 is to be formed, as shown in Fig. 6. When the via conductor 73 is formed in the through hole with the glass cloth G protruding therefrom by the above-described method, stress is dispersed by the protruding glass cloth G, and therefore the occurrence of cracks in the via conductor 73 is suppressed.

[0164] 2 and other examples, the through-hole conductor 70B is electrically connected to the cathode layer 40 via the external electrode layer 80B and the via conductor 73. In this manner, the through-hole conductor 70B is preferably electrically connected to the cathode layer 40.

[0165] In the example shown in FIG. 2 and other figures, the external electrode layer 80B is electrically connected to the cathode layer 40 through a via conductor 73 and functions as a connection terminal for the cathode layer 40 .

[0166] The capacitor array 1 preferably further includes a resin-filled portion 90B formed by filling the through-hole 71B with a resin material. In the example shown in Fig. 2, the resin-filled portion 90B is provided in a space surrounded by the through-hole conductors 70B on the inner wall surface of the through-hole 71B. The provision of the resin-filled portion 90B eliminates the space within the through-hole 71B, thereby suppressing delamination of the through-hole conductors 70B.

[0167] The thermal expansion coefficient of resin filling portion 90B is preferably higher than that of through-hole conductor 70B. More specifically, the thermal expansion coefficient of the resin material filling through hole 71B is preferably higher than that of the constituent material (e.g., copper) of through-hole conductor 70B. In this case, resin filling portion 90B, more specifically, the resin material filling through hole 71B, expands in a high-temperature environment, pressing through-hole conductor 70B against the inner wall surface of through hole 71B from the inside to the outside of through hole 71B, thereby sufficiently suppressing delamination of through-hole conductor 70B.

[0168] The thermal expansion coefficient of resin filling portion 90B may be the same as or lower than that of through-hole conductor 70B. More specifically, the thermal expansion coefficient of the resin material filled in through hole 71B may be the same as or lower than that of the constituent material of through-hole conductor 70B.

[0169] The capacitor array 1 does not necessarily have to have the resin filling portion 90B. In this case, it is preferable that the through-hole conductor 70B is provided not only on the inner wall surface of the through hole 71B but also throughout the entire interior of the through hole 71B.

[0170] In the capacitor array of the present invention, the capacitor section is not limited to an electrolytic capacitor including the solid electrolytic capacitor described above. In the capacitor array of the present invention, the capacitor section may be, for example, a ceramic capacitor using barium titanate, silicon nitride (SiN), silicon dioxide (SiO ２ ), a thin film capacitor using hydrogen fluoride (HF) or the like, a trench type capacitor having an MIM (Metal Insulator Metal) structure, or the like may be configured.

[0171] In the capacitor array of the present invention, from the viewpoint of reducing the thickness and increasing the area of ​​the capacitor portion, and improving the mechanical properties of the capacitor portion, such as rigidity and flexibility, it is preferable that the capacitor portion be a capacitor having a base material of a metal such as aluminum, and it is more preferable that the capacitor portion be an electrolytic capacitor having a base material of a metal such as aluminum.

[0172] The capacitor array of the present invention is used, for example, in a composite electronic component. Such a composite electronic component includes, for example, the capacitor array of the present invention and an electronic component electrically connected to the external electrode layer of the capacitor array of the present invention.

[0173] In a composite electronic component, the electronic component electrically connected to the external electrode layer may be a passive element, an active element, both a passive element and an active element, or a composite of a passive element and an active element.

[0174] An example of a passive element is an inductor.

[0175] Examples of active elements include a memory, a GPU (Graphical Processing Unit), a CPU (Central Processing Unit), an MPU (Micro Processing Unit), and a PMIC (Power Management IC).

[0176] When the capacitor array of the present invention is used in a composite electronic component, it is treated, for example, as a substrate for mounting electronic components. Therefore, by forming the capacitor array as a whole in a sheet shape and further forming the electronic components to be mounted on the capacitor array in a sheet shape, it is possible to electrically connect the capacitor array of the present invention to the electronic components in the thickness direction via through-hole conductors that penetrate the electronic components in the thickness direction. As a result, it is possible to configure the passive elements and active elements of the electronic components as a single module.

[0177] For example, a switching regulator can be formed by electrically connecting the capacitor array of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.

[0178] In a composite electronic component, a circuit layer may be formed on one main surface of a capacitor matrix sheet on which a plurality of capacitor arrays of the present invention are laid out, and the circuit layer may then be electrically connected to passive or active elements serving as the electronic component.

[0179] Alternatively, the capacitor array of the present invention may be placed in a cavity pre-formed in a substrate, embedded in resin, and then a circuit layer may be formed on the resin.Another cavity of the same substrate may be equipped with a passive or active element as another electronic component.

[0180] Alternatively, the capacitor array of the present invention may be mounted on a smooth carrier such as a wafer or glass, an outer layer made of resin may be formed, a circuit layer may be formed, and the circuit layer may then be electrically connected to passive or active elements as electronic components.

[0181] The present specification discloses the following:

[0182] <1> A capacitor array comprising: a plurality of capacitor sections arranged in a plane in a surface direction perpendicular to a thickness direction; and a sealing section made of an insulating material that seals the plurality of capacitor sections from both main surfaces that face each other in the thickness direction, wherein the sealing section is formed by stacking a plurality of sealing layers in the thickness direction, and the plurality of sealing layers include a first sealing layer that is located closest to the capacitor sections in the thickness direction, and a second sealing layer that is located on the opposite side of the first sealing layer from the capacitor sections in the thickness direction and that constitutes both main surfaces that face each other in the thickness direction of the sealing section.

[0183] <2> The capacitor array according to <1>, wherein the capacitor section includes an anode plate having a porous layer on at least one of two principal surfaces facing each other in the thickness direction, a dielectric layer provided on a surface of the porous layer, and a cathode layer provided on a surface of the dielectric layer.

[0184] <3> The capacitor array according to <1> or <2>, wherein the insulating material constituting the first sealing layer contains an insulating resin.

[0185] <4> The capacitor array according to <3>, wherein the insulating material constituting the first sealing layer further contains an inorganic filler.

[0186] <5> Median diameter D of the inorganic filler contained in the insulating material constituting the first sealing layer ５０ The capacitor array according to <4>, wherein the thickness is 10 μm or less.

[0187] <6> The capacitor array according to any one of <1> to <5>, wherein the insulating material constituting the second sealing layer contains an insulating resin.

[0188] <7> The capacitor array according to <6>, wherein the insulating materials constituting the first sealing layer and the second sealing layer contain different insulating resins.

[0189] <8> The capacitor array according to <6> or <7>, wherein the insulating material constituting the second sealing layer further contains an inorganic filler.

[0190] <9> The capacitor array according to any one of <6> to <8>, wherein the insulating material constituting the second sealing layer further contains glass cloth.

[0191] <10> The capacitor array according to any one of <1> to <9>, wherein the second sealing layer has a smaller linear expansion coefficient in the thickness direction than the first sealing layer.

[0192] <11> The capacitor array according to any one of <1> to <10>, wherein the first sealing layer has a first insulating portion covering both main surfaces of the plurality of capacitor portions.

[0193] <12> The capacitor array described in <11>, wherein in a region on one of the two main surfaces of the sealing portion, the maximum dimension in the thickness direction of the first insulating portion of the first sealing layer and the maximum dimension in the thickness direction of the second sealing layer are different from each other.

[0194] <13> The capacitor array according to <12>, wherein in a region on one of the two main surfaces of the sealing portion, a maximum dimension in the thickness direction of the first insulating portion of the first sealing layer is larger than a maximum dimension in the thickness direction of the second sealing layer.

[0195] <14> The capacitor array described in <13>, wherein in a region on one of both main surfaces of the sealing portion, a ratio of a maximum dimension in the thickness direction of the first insulating portion of the first sealing layer to a maximum dimension in the thickness direction of the second sealing layer is 110% or more.

[0196] <15> The capacitor array according to <13> or <14>, wherein in a region on one of the two main surfaces of the sealing portion, the maximum dimension in the thickness direction of the first insulating portion of the first sealing layer is 5 μm or more.

[0197] <16> The capacitor array according to any one of <13> to <15>, wherein in a region on one of both main surfaces of the sealing portion, the maximum dimension in the thickness direction of the second sealing layer is 100 μm or less.

[0198] <17> The capacitor array according to any one of <13> to <16>, wherein in a region on one of both main surfaces of the sealing portion, a ratio of a minimum dimension in the thickness direction of the first insulating portion of the first sealing layer to a maximum dimension in the thickness direction of the first insulating portion of the first sealing layer is 50% or less.

[0199] <18> The capacitor array according to any one of <11> to <17>, wherein the first sealing layer further has a second insulating portion that separates the plurality of capacitor portions into individual capacitor portions.

[0200] <19> The capacitor array according to any one of <11> to <18>, wherein the first sealing layer further includes a third insulating portion that penetrates each of the plurality of capacitor portions in the thickness direction.

[0201] <20> The capacitor array according to any one of <1> to <19>, further comprising a through-hole conductor penetrating the capacitor section and the sealing section in the thickness direction.

[0202] 1 Capacitor array 10 Capacitor section 20 Anode plate 21 Core section 22 Porous layer 30 Dielectric layer 40 Cathode layer 41 Solid electrolyte layer 42 Conductor layer 42A Conductive resin layer 42B Metal layer 50 Mask layer 60 Sealing section 60A First sealing layer 60B Second sealing layer 61 First insulating section 62 Second insulating section 63 Third insulating section 70A, 70B Through-hole conductor 71A, 71B Through hole 72 Anode connection layer 73 Via conductor 80A, 80B External electrode layer 90A, 90B Resin filling section da1 Maximum dimension in the thickness direction of the first insulating section of the first sealing layer da2 Minimum dimension in the thickness direction of the first insulating section of the first sealing layer db1 Maximum dimension in the thickness direction of the second sealing layer G Glass cloth T Thickness direction U First direction V Second direction

Claims

1. A plurality of capacitor portions arranged in a plane in a surface direction perpendicular to the thickness direction; a sealing portion that seals the capacitor portions from both main surface sides that face each other in the thickness direction of the capacitor portions and is made of an insulating material; The sealing portion is formed by laminating a plurality of sealing layers in the thickness direction, the plurality of sealing layers include a first sealing layer located closest to the capacitor portion in the thickness direction, and a second sealing layer located on the opposite side of the capacitor portion in the thickness direction relative to the first sealing layer and constituting both main surfaces of the sealing portion facing each other in the thickness direction, the insulating material constituting the first sealing layer contains an insulating resin and an inorganic filler, The capacitor array according to claim 1, wherein the inorganic filler contained in the insulating material constituting the first sealing layer has a median diameter D 50 of 10 μm or less.

2. 2. The capacitor array of claim 1, wherein the capacitor section includes an anode plate having a porous layer on at least one of two main surfaces facing each other in the thickness direction, a dielectric layer provided on a surface of the porous layer, and a cathode layer provided on the surface of the dielectric layer.

3. 3. The capacitor array according to claim 1, wherein the insulating material constituting the second sealing layer contains an insulating resin.

4. 4. The capacitor array according to claim 3, wherein the insulating materials constituting the first sealing layer and the second sealing layer contain different insulating resins.

5. The capacitor array according to claim 3 , wherein the insulating material constituting the second sealing layer further contains an inorganic filler.

6. 4. The capacitor array of claim 3, wherein the insulating material constituting the second sealing layer further contains glass cloth.

7. The capacitor array according to claim 1 , wherein a linear expansion coefficient of the second sealing layer in the thickness direction is smaller than a linear expansion coefficient of the first sealing layer in the thickness direction.

8. 3. The capacitor array according to claim 1, wherein the first sealing layer has a first insulating portion covering both main surfaces of the plurality of capacitor portions.

9. 9. The capacitor array of claim 8, wherein in a region on one of the two main surfaces of the sealing portion, a maximum dimension in the thickness direction of the first insulating portion of the first sealing layer and a maximum dimension in the thickness direction of the second sealing layer are different from each other.

10. 10. The capacitor array of claim 9, wherein in a region on one of the two main surfaces of the sealing portion, the maximum dimension in the thickness direction of the first insulating portion of the first sealing layer is larger than the maximum dimension in the thickness direction of the second sealing layer.

11. The capacitor array of claim 10, wherein in a region on one of the two main surfaces of the sealing portion, a ratio of a maximum dimension in the thickness direction of the first insulating portion of the first sealing layer to a maximum dimension in the thickness direction of the second sealing layer is 110% or more.

12. 11. The capacitor array according to claim 10, wherein a maximum dimension in the thickness direction of the first insulating portion of the first sealing layer in a region on one of both main surfaces of the sealing portion is 5 μm or more.

13. 11. The capacitor array according to claim 10, wherein a maximum dimension in the thickness direction of the second sealing layer in a region on one of both main surfaces of the sealing portion is 100 μm or less.

14. The capacitor array of claim 10, wherein in a region on one of the two main surfaces of the sealing portion, a ratio of a minimum dimension in the thickness direction of the first insulating portion of the first sealing layer to a maximum dimension in the thickness direction of the first insulating portion of the first sealing layer is 50% or less.

15. The capacitor array according to claim 8 , wherein the first sealing layer further includes a second insulating portion that separates the plurality of capacitor portions from each other.

16. The capacitor array according to claim 8 , wherein the first sealing layer further includes a third insulating portion penetrating each of the plurality of capacitor portions in the thickness direction.

17. The capacitor array according to claim 1 , further comprising a through-hole conductor penetrating the capacitor portion and the sealing portion in the thickness direction.