Semiconductor device

Abstract

This semiconductor device comprises: a first metal layer and second metal layer; a second semiconductor element mounted on the second metal layer; a first conductive member; a second connection member that conductively connects the second semiconductor element and the first conductive member; and a sealing resin that covers at least a portion of each of the second metal layer, the second semiconductor element, the first conductive member, and the second connection member. The first conductive member is spaced apart from the first metal layer in a z direction. The semiconductor device further comprises a first insulating spacer that is interposed between the first metal layer and the first conductive member.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Semiconductor devices including semiconductor elements such as switching elements are widely known. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a plurality of semiconductor elements, a plurality of conductive members, and a plurality of wires. The semiconductor elements and the conductive members are electrically connected by the wires.

[0003] Japanese Patent Application Laid-Open No. 2022-53801

[0004] When bonding a wire to a conductive member, the conductive member may bend, making it difficult to achieve a stable conductive connection.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can achieve more stable conductive connection.

[0006] A semiconductor device provided by one aspect of the present disclosure includes a metal layer, a semiconductor element, a conductive member, a connecting member, an insulating spacer, and a sealing resin. The semiconductor element is mounted on the metal layer. The conductive member is spaced apart from the metal layer in the thickness direction of the metal layer. The snow statue member electrically connects the semiconductor element and the conductive member. The sealing resin covers at least a portion of the metal layer, the semiconductor element, the conductive member, and the connecting member. The insulating spacer is interposed between the metal layer and the conductive member.

[0007] According to the above configuration, a more stable conductive connection can be achieved.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 1. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 1. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 1. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 1. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 1. FIG. 12 is a cross-sectional view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 13 is a cross-sectional view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 14 is a cross-sectional view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. Fig. 15 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure, Fig. 16 is a cross-sectional view taken along line XVI-XVI in Fig. 15, and Fig. 17 is a cross-sectional view taken along line XVII-XVII in Fig. 15.

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used merely for purposes of distinction and are not intended to impose any ranking on their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 11 illustrate a semiconductor device according to a first embodiment of the present disclosure. A semiconductor device A10 according to this embodiment includes a conductive member 11, a conductive member 12, a first conductive member 13, a plurality of first connecting members 14, a plurality of second connecting members 15, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, and a sealing resin 50. The semiconductor device A10 also includes a second conductive member 171, a third conductive member 172, a fourth conductive member 181, a fifth conductive member 182, a plurality of dummy terminals 19, a plurality of third connecting members 41, a plurality of fifth connecting members 42, a plurality of fourth connecting members 43, and a plurality of sixth connecting members 44. The semiconductor device A10 also includes a first insulating spacer 61, a second insulating spacer 62, and a third insulating spacer 63. The semiconductor device A10 converts a DC power supply voltage applied to a first terminal 112 and a third terminal 132 (described below) into AC power using a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. The converted AC power is input to a power supply target such as a motor from a second terminal 122 (described later). The semiconductor device A10 constitutes a part of a power conversion circuit such as an inverter. Note that the use and specific configuration of the semiconductor device according to the present invention are not limited in any way.

[0014] FIG. 1 is a plan view showing the semiconductor device A10. FIG. 2 is a bottom view showing the semiconductor device A10. FIG. 3 is a side view showing the semiconductor device A10. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 1. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 1. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 1. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 1. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 1. In these figures, the z direction is, for example, an example of the thickness direction of the present disclosure. In FIG. 1, the sealing resin 50 is shown by imaginary lines.

[0015] Conductive member 11: The conductive member 11 includes a first metal layer 111, a first terminal 112, and a first dunnage material 113. The first metal layer 111 is a conductive material, and includes, for example, Cu (copper). The first metal layer 111 is located on one side of the semiconductor device A10 in the x direction. The first metal layer 111 has a first main surface 111A. The first main surface 111A faces one side in the z direction. In the illustrated example, the first main surface 111A is a flat surface.

[0016] As shown in FIGS. 1 , 2 , and 6 , the first terminal 112 protrudes to one side in the x direction and has a portion exposed from the sealing resin 50. The first terminal 112 protrudes to one side in the x direction and has an exposed portion from the sealing resin 50. The first terminal 112 is located on one side in the x direction of the first metal layer 111. The first terminal 112 is located on the other side in the y direction of the first metal layer 111. A portion of the first terminal 112 on the other side in the x direction overlaps, in the z direction, a portion of the first metal layer 111 on the other side in the y direction. The first terminal 112 is located on one side in the z direction with respect to the first main surface 111A and is separated from the first metal layer 111. A portion of the first terminal 112 on the other side in the x direction overlaps, in the z direction, a portion of the first main surface 111A on one side in the x direction. The composition of the first terminal 112 includes Cu (copper). The first terminal 112 has a first mounting hole 112A that penetrates the first terminal 112 in the z direction.

[0017] 1 and 6 , the first dunnage material 113 is interposed between the first metal layer 111 and the first terminal 112. The first dunnage material 113 contains Cu (copper). The first dunnage material 113 is conductively joined to the first main surface 111A of the first metal layer 111 and the first terminal 112. The method of conductive joining is not particularly limited, and a method using a conductive joining material such as solder, a method such as welding, or the like may be appropriately adopted.

[0018] In this embodiment, as shown in FIGS. 1, 2, and 4 to 9, the first metal layer 111 is supported by a support member 10A. The support member 10A is located on the opposite side of the first metal layer 111 from the first main surface 111A. The specific configuration of the support member 10A is not limited in any way, and in this embodiment, the support member 10A is made of a DBC (Direct Bonded Copper) substrate, an AMB (Active Metal Brazing) substrate, or the like. The support member 10A includes an insulating layer 101, a support layer 102, and a heat dissipation layer 103. The support member 10A is covered with a sealing resin 50 except for a portion of the heat dissipation layer 103.

[0019] The insulating layer 101 includes a portion located between the support layer 102 and the heat dissipation layer 103 in the z direction. The insulating layer 101 may be made of a material with high thermal conductivity. For example, the insulating layer 101 may be made of ceramics including an aluminum nitride (AlN) sintered body. The thickness of the insulating layer 101 is thinner than the thickness of the first metal layer 111.

[0020] The support layer 102 is located between the insulating layer 101 and the first metal layer 111 in the z direction. The composition of the support layer 102 includes copper (Cu). When viewed in the z direction, the outer periphery of the support layer 102 is located inside the outer periphery of the insulating layer 101. The support layer 102 is bonded to the first metal layer 111. The support layer 102 and the first metal layer 111 are bonded together, for example, via solder.

[0021] The heat dissipation layer 103 is located on the opposite side of the insulating layer 101 from the support layer 102 in the z direction. A portion of the heat dissipation layer 103 is exposed from the sealing resin 50. When the semiconductor device A10 is in use, for example, a heat sink (not shown) is bonded to the heat dissipation layer 103. The composition of the heat dissipation layer 103 includes copper. When viewed in the z direction, the outer periphery of the heat dissipation layer 103 is located inside the outer periphery of the insulating layer 101.

[0022] Conductive member 12: The conductive member 12 includes a second metal layer 121, a second terminal 122, and a second dunnage material 123. The second metal layer 121 is a conductive material, and includes, for example, Cu (copper). The second metal layer 121 is located on the other side of the semiconductor device A10 in the x direction. The second metal layer 121 has a second main surface 121A. The second main surface 121A faces one side in the z direction. In the illustrated example, the second main surface 121A is a flat surface.

[0023] As shown in FIGS. 1 to 6 , the second terminal 122 protrudes to the other side in the x direction and has a portion exposed from the sealing resin 50. The second terminal 122 protrudes to the other side in the x direction and has an exposed portion from the sealing resin 50. The second terminal 122 is located on the other side in the x direction of the second metal layer 121. A portion of one side of the first terminal 112 in the x direction overlaps, in the z direction, a portion of the second metal layer 121 on the other side in the x direction. The center position of the second terminal 122 in the y direction substantially coincides with the center position of the second metal layer 121 in the y direction. The second terminal 122 is located on one side in the z direction with respect to the second main surface 121A and is spaced apart from the second metal layer 121. A portion of one side of the second terminal 122 in the x direction overlaps with the center of the second main surface 121A in the y direction when viewed in the z direction. The composition of the second terminal 122 includes Cu (copper). A second mounting hole 122A is provided in the second terminal 122. The second mounting hole 122A penetrates the second terminal 122 in the z direction.

[0024] 1 and 4 to 6, the second dunnage material 123 is interposed between the second metal layer 121 and the second terminal 122. The second dunnage material 123 contains Cu (copper). The second dunnage material 123 is conductively joined to the second main surface 121A of the second metal layer 121 and the second terminal 122. The method of conductive joining is not particularly limited, and a method using a conductive joining material such as solder, a method such as welding, or the like may be appropriately adopted.

[0025] 1, 2, 4 to 6, 10, and 11, the second metal layer 121 is supported by a support member 10B. The support member 10B is located on the opposite side of the second metal layer 121 from the second main surface 121A. The specific configuration of the support member 10A is not limited in any way, and in this embodiment, it has the same configuration as the support member 10A, so a description thereof will be omitted.

[0026] First semiconductor element 21: As shown in FIGS. 1 and 4 to 7, the multiple first semiconductor elements 21 are bonded to the first main surface 111A of the first metal layer 111. All of the multiple first semiconductor elements 21 are identical elements. Each first semiconductor element 21 may be, for example, a field-effect transistor, such as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor), or a bipolar transistor, such as an IGBT (Insulated Gate Bipolar Transistor). Unlike the present embodiment, each first semiconductor element 21 may be a diode. In the description of the semiconductor device A10, the multiple first semiconductor elements 21 are n-channel MOSFETs with a vertical structure. The multiple first semiconductor elements 21 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). The multiple first semiconductor elements 21 are arranged on the first main surface 111A along the y direction.

[0027] Each of the first semiconductor elements 21 has a first drain electrode 211 , a first source electrode 212 and a first gate electrode 213 .

[0028] The first drain electrode 211 is located on the other side in the z direction of the first semiconductor element 21. The first drain electrode 211 faces the first main surface 111A of the first metal layer 111. The first drain electrode 211 is configured to allow a current corresponding to the power before being converted by the first semiconductor element 21 to flow through it. The first drain electrode 211 is conductively bonded to the first main surface 111A via a conductive bonding layer 29. Each of the first drain electrodes 211 of the multiple first semiconductor elements 21 is electrically connected to the conductive member 11. The conductive bonding layer 29 may be, for example, any of solder and a sintered metal containing silver or the like.

[0029] The first source electrode 212 is located on one side in the z direction of the first semiconductor element 21. The first source electrode 212 is located on the opposite side in the z direction from the first drain electrode 211. The first source electrode 212 is configured to allow a current corresponding to the power converted by the first semiconductor element 21 to flow through it.

[0030] The first gate electrode 213 is located on one side in the z direction of the first semiconductor element 21. The first gate electrode 213 is located on the same side in the z direction as the first source electrode 212 of the first semiconductor element 21. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. As shown in FIG. 3 , the area of ​​the first gate electrode 213 is smaller than the area of ​​the first source electrode 212 when viewed in the z direction.

[0031] Second semiconductor element 22: As shown in FIGS. 1 and 4 to 6, the multiple second semiconductor elements 22 are bonded to the second main surface 121A of the second metal layer 121. The multiple second semiconductor elements 22 are identical to the multiple first semiconductor elements 21. Each second semiconductor element 22 may be an n-channel MOSFET with a vertical structure. Each second semiconductor element 22 may be either a field-effect transistor, including a metal-insulator-semiconductor field-effect transistor (MISFET), or a bipolar transistor, such as an insulated gate bipolar transistor (IGBT). Each second semiconductor element 22 may be a diode. In the description of the semiconductor device A10, the multiple second semiconductor elements 22 are n-channel MOSFETs with a vertical structure. The multiple second semiconductor elements 22 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). The multiple second semiconductor elements 22 are arranged on the second main surface 121A along the y direction.

[0032] Each of the plurality of second semiconductor elements 22 has a second drain electrode 221 , a second source electrode 222 and a second gate electrode 223 .

[0033] The second drain electrode 221 is located on one side in the z direction of the second semiconductor element 22. The second gate electrode 223 faces the second main surface 121A of the second metal layer 121 of the second semiconductor element 22. The second drain electrode 221 is configured so that a current corresponding to the power before being converted by the second semiconductor element 22 flows through the second drain electrode 221. The second drain electrode 221 is conductively bonded to the second main surface 121A via a conductive bonding layer 29. Each second drain electrode 221 of the multiple second semiconductor elements 22 is electrically connected to the conductive member 12.

[0034] The second source electrode 222 is located on one side in the z direction of the second semiconductor element 22. The second source electrode 222 is located on the opposite side in the z direction of the second semiconductor element 22 from the second drain electrode 221. The second source electrode 222 is configured to allow a current corresponding to the power converted by the second semiconductor element 22 to flow through it.

[0035] The second gate electrode 223 is located on one side in the z direction of the second semiconductor element 22. The second source electrode 222 is located on the same side in the z direction as the second source electrode 222 of the second semiconductor element 22. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. When viewed in the z direction, the area of ​​the second gate electrode 223 is smaller than the area of ​​the second source electrode 222.

[0036] 1, 2, and 4 to 7, the first conductive member 13 includes an extension 131 and a third terminal 132. The first conductive member 13 is a conductive material and includes, for example, Cu (copper).

[0037] The third terminal 132 has a portion protruding from the sealing resin 50 to one side in the x direction. The third terminal 132 has an exposed portion protruding from the sealing resin 50 to one side in the x direction. The third terminal 132 is located on one side in the y direction with respect to the first terminal 112. The third terminal 132 is located on one side in the x direction of the first metal layer 111. The third terminal 132 is located on one side in the z direction with respect to the first main surface 111A and is spaced apart from the first metal layer 111. A portion of the third terminal 132 on the other side in the x direction overlaps a portion of the first main surface 111A on one side in the x direction when viewed in the z direction. The composition of the third terminal 132 includes Cu (copper). The third terminal 132 has a third mounting hole 132A. The third mounting hole 132A penetrates the third terminal 132 in the z direction.

[0038] The extending portion 131 extends from the third terminal 132 to the other side in the x direction. The extending portion 131 is covered with the sealing resin 50. The extending portion 131 of this embodiment includes a first portion 1311, a second portion 1312, and a third portion 1313.

[0039] As shown in FIGS. 4 and 5 , the distance z1 of the first portion 1311 from the first main surface 111A in the z direction is smaller than the distance z0 from the first main surface 111A to the third terminal 132 in the z direction. The magnitude of the distance z1 is, for example, 0.1 mm or more. As shown in FIGS. 1 , 2 , and 4 to 7 , the first portion 1311 is located between the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 in the x direction. As shown in FIG. 5 , in the illustrated example, the distance z1 is larger than the distance z2 from the first main surface 111A in the z direction to one side end of the first semiconductor element 21 in the z direction. For example, the distance z2 is approximately 0.5 mm, while the distance z1 is approximately 0.8 mm to 1.2 mm.

[0040] The shape of the first portion 1311 is not limited in any way, and in this embodiment, it is a shape that extends in the y direction. The first portion 1311 is, for example, a flat strip. In the example shown, the first portion 1311 overlaps the first main surface 111A (first metal layer 111) when viewed in the z direction. In the example shown, the other edge of the first portion 1311 in the x direction is located on one side in the x direction of the other edge of the first main surface 111A in the x direction.

[0041] The second portion 1312 is connected to the third terminal 132. The second portion 1312 extends from the third terminal 132 along the x direction to the other side in the x direction. The shape of the second portion 1312 is not limited in any way and may be, for example, a flat band-like shape. The distance in the z direction from the first main surface 111A to the second portion 1312 is the same as (or approximately the same as) the distance z0. The second portion 1312 is located on one side in the y direction (the right side in FIG. 1 ) of the multiple first semiconductor elements 21. The other edge in the x direction of the second portion 1312 is located on the other side in the x direction of the one edge in the x direction of the first semiconductor elements 21.

[0042] The third portion 1313 is interposed between the first portion 1311 and the second portion 1312. Due to the inclusion of the third portion 1313, the extending portion 131 has a bent shape when viewed in the y direction. In the illustrated example, the third portion 1313 is part of one end edge of the first portion 1311 in the x direction and is connected to a portion closer to the one end in the y direction. The third portion 1313 is connected to a portion of the second portion 1312 on the other side in the x direction.

[0043] First connection members 14: As shown in FIGS. 1 , 5 , and 7 , the multiple first connection members 14 individually connect the multiple first semiconductor elements 21 to the conductive member 12. More specifically, the first connection members 14 are connected to the first source electrode 212 of the first semiconductor element 21 and the second main surface 121A of the second metal layer 121. The specific configuration of the first connection members 14 is not limited, and may be, for example, a wire or ribbon containing a metal material. Examples of metal materials include Cu (copper), Al (aluminum), and alloys thereof. In this example, the first connection members 14 are wires containing Cu (copper). The number of first connection members 14 is not limited, and in the illustrated example, two first connection members 14 are connected to the first source electrode 212 of one first semiconductor element 21 and the first main surface 111A of the first metal layer 111.

[0044] The first connecting member 14 straddles one side in the z direction across the first portion 1311. That is, the first connecting member 14 has a portion that is separated on one side in the z direction from the first portion 1311. In the illustrated example, the first connecting member 14 has a curved shape that straddles one side in the z direction across the first portion 1311.

[0045] Second connection members 15: As shown in FIGS. 1 , 4 , 6 , and 7 , the multiple second connection members 15 individually connect the multiple second semiconductor elements 22 to the first conductive member 13. More specifically, the second connection members 15 are connected to the second source electrodes 222 of the second semiconductor elements 22 and the first portions 1311 of the extending portions 131 of the first conductive member 13. The specific configuration of the multiple second connection members 15 is not limited in any way and may be, for example, wires and ribbons containing a metal material, or plate materials. The second connection members 15 may be separate from the first conductive member 13 or may be integrated with the first conductive member 13. In this embodiment, the second connection members 15 are separate from the first conductive member 13 and are, for example, wires containing Cu (copper). The number of second connection members 15 is not limited in any way, and in the example shown, two second connection members 15 are connected to the second source electrode 222 of one second semiconductor element 22 and the second main surface 121A of the second metal layer 121.

[0046] 1, the plurality of first connection members 14 and the plurality of second connection members 15 are aligned in the y direction. In the illustrated example, two pairs of the first connection members 14 and two pairs of the second connection members 15 are aligned alternately in the y direction.

[0047] Second conductive member 171, fourth conductive member 181: As shown in FIGS. 1 to 6 and 9 , the second conductive member 171 includes a first gate terminal 1711, a first gate wiring portion 1712, and a step portion 1713. The second conductive member 171 is a so-called lead member and contains, for example, Cu (copper) in its composition. The first gate terminal 1711 is located outside the sealing resin 50 and functions as a gate terminal capable of supplying gate voltage to the multiple first semiconductor elements 21 of the semiconductor device A10. The first gate wiring portion 1712 is located on one side in the x-direction with respect to the multiple first semiconductor elements 21. The first gate wiring portion 1712 is spaced apart from the first main surface 111A of the first metal layer 111 on one side in the z-direction. The first gate wiring portion 1712 has a shape extending in the y-direction. The distance from the first main surface 111A to the first gate wiring portion 1712 in the z direction is shorter than the distance from the first main surface 111A to the first gate terminal 1711 in the z direction. The first gate wiring portion 1712 is individually conductively connected to each of the first gate electrodes 213 of the multiple first semiconductor elements 21 by multiple third connection members 41. The third connection members 41 may be wires containing, for example, Au (gold), Cu (copper), or the like. The step portion 1713 is located between the first gate terminal 1711 and the first gate wiring portion 1712. By having the step portion 1713, the second conductive member 171 can have a bent shape when viewed in the x direction.

[0048] As shown in FIGS. 1 to 6 and 8 , the fourth conductive member 181 includes a first detection terminal 1811, a first detection wiring portion 1812, and a step portion 1813. The fourth conductive member 181 is a so-called lead member and contains, for example, Cu (copper). The first detection terminal 1811 is located outside the sealing resin 50 and functions as a detection terminal capable of detecting the operating states of the multiple first semiconductor elements 21 of the semiconductor device A10. The first detection wiring portion 1812 is located on one side in the x-direction relative to the first gate wiring portion 1712. The first detection wiring portion 1812 is spaced apart from the first main surface 111A of the first metal layer 111 on one side in the z-direction. The first detection wiring portion 1812 extends in the y-direction. The distance from the first main surface 111A to the first detection wiring portion 1812 in the z-direction is shorter than the distance from the first main surface 111A to the first detection terminal 1811 in the z-direction. The first detection wiring portion 1812 is individually and electrically connected to each of the first source electrodes 212 of the multiple first semiconductor elements 21 by multiple fifth connection members 42. The fifth connection members 42 may be wires containing, for example, Au (gold), Cu (copper), or the like. The step portion 1813 is located between the first detection terminal 1811 and the first detection wiring portion 1812. By including the step portion 1813, the fourth conductive member 181 may have a bent shape when viewed in the x direction.

[0049] Third conductive member 172, fifth conductive member 182: As shown in FIGS. 1 to 6 and 10 , the third conductive member 172 includes a second gate terminal 1721, a second gate wiring portion 1722, and a step portion 1723. The third conductive member 172 is a so-called lead member and contains, for example, Cu (copper) in its composition. The second gate terminal 1721 is located outside the sealing resin 50 and functions as a gate terminal capable of supplying gate voltage to the multiple second semiconductor elements 22 of the semiconductor device A10. The second gate wiring portion 1722 is located on the other side in the x-direction relative to the multiple second semiconductor elements 22. The second gate wiring portion 1722 is spaced from the first main surface 111A of the first metal layer 111 on one side in the z-direction. The second gate wiring portion 1722 has a shape extending in the y-direction. The distance from the first main surface 111A to the second gate wiring portion 1722 in the z direction is shorter than the distance from the first main surface 111A to the second gate terminal 1721 in the z direction. The second gate wiring portion 1722 is individually conductively connected to each of the second gate electrodes 223 of the second semiconductor elements 22 by a plurality of fourth connection members 43. The fourth connection members 43 may be wires containing, for example, Au (gold), Cu (copper), or the like. The step portion 1723 is located between the second gate terminal 1721 and the second gate wiring portion 1722. By including the step portion 1723, the third conductive member 172 may have a curved shape when viewed in the x direction.

[0050] As shown in FIGS. 1 to 6 and 11 , the fifth conductive member 182 includes a second detection terminal 1821, a second detection wiring portion 1822, and a step portion 1823. The fifth conductive member 182 is a so-called lead member and contains, for example, Cu (copper). The second detection terminal 1821 is located outside the sealing resin 50 and functions as a detection terminal capable of detecting the operating states of the multiple second semiconductor elements 22 of the semiconductor device A10. The second detection wiring portion 1822 is located on the other side in the x-direction relative to the second gate wiring portion 1722. The second detection wiring portion 1822 is spaced apart from the first main surface 111A of the first metal layer 111 on one side in the z-direction. The second detection wiring portion 1822 extends in the y-direction. The distance from the first main surface 111A to the second detection wiring portion 1822 in the z-direction is shorter than the distance from the first main surface 111A to the second detection terminal 1821 in the z-direction. The second detection wiring portion 1822 is individually and electrically connected to the second source electrodes 222 of the second semiconductor elements 22 by a plurality of sixth connection members 44. The sixth connection members 44 may be wires containing, for example, Au (gold), Cu (copper), or the like. The step portion 1823 is located between the second detection terminal 1821 and the second detection wiring portion 1822. By including the step portion 1823, the fifth conductive member 182 may have a bent shape when viewed in the x direction.

[0051] Dummy terminals 19: As shown in FIGS. 1 to 7 , the semiconductor device A10 further includes four dummy terminals 19. Two of the four dummy terminals 19 are located on either side of the first gate terminal 1711 and the first detection terminal 1811 in the x direction. The remaining two dummy terminals 19 are located on either side of the second gate terminal 1721 and the second detection terminal 1821 in the x direction. The dummy terminals 19 may be metal leads. The dummy terminals 19 may be made of a material containing copper or a copper alloy. A portion of each of the multiple dummy terminals 19 is covered with sealing resin. The portions of the multiple dummy terminals 19 that stand up in the z direction are exposed from the sealing resin 50.

[0052] Sealing resin 50: As shown in FIGS. 1 to 11 , the sealing resin 50 covers the first metal layer 111, the second metal layer 121, the plurality of first connection members 14, the plurality of second connection members 15, the plurality of first semiconductor elements 21, and the plurality of second semiconductor elements 22. Furthermore, the sealing resin 50 covers portions of the first terminal 112, the second terminal 122, and the third terminal 132, as well as the extension portion 131, the first gate wiring portion 1712, the first detection wiring portion 1812, the second gate wiring portion 1722, and the second detection wiring portion 1822. The sealing resin 50 has electrical insulation properties. The sealing resin 50 may be made of a material containing, for example, black epoxy resin. The sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, a third side surface 56, and a fourth side surface 56.

[0053] The top surface 51 faces one side in the z direction, and the bottom surface 52 faces the other side in the z direction.

[0054] The first side surface 53 faces one side in the x-direction. A portion of the first terminal 112 and a portion of the third terminal 132 protrude from the first side surface 53. The second side surface 54 faces the other side in the x-direction. A portion of the second terminal 122 protrudes from the second side surface 54.

[0055] The third side surface 55 faces one side in the y direction. The fourth side surface 56 faces the other side in the y direction. The first gate terminal 1711, the first detection terminal 1811, the second gate terminal 1721, the second detection terminal 1821, and the plurality of dummy terminals 19 protrude from the fourth side surface 56.

[0056] First insulating spacer 61: As shown in FIGS. 1 and 4 to 7 , the first insulating spacer 61 is interposed between the first portion 1311 of the extension portion 131, which is part of the first conductive member 13, and the first metal layer 111. The first insulating spacer 61 is made of an insulating material, such as epoxy resin or silicone resin. The first insulating spacer 61 may have an insulating layer provided on the surface of a conductive core material. The static friction coefficient between the first insulating spacer 61 and the first metal layer 111 and the static friction coefficient between the first insulating spacer 61 and the first conductive member 13 are preferably greater than the static friction coefficient between the first metal layer 111 and the first conductive member 13. The glass transition point of the first insulating spacer 61 is preferably higher than the glass transition point of the sealing resin 50.

[0057] The shape of the first insulating spacer 61 is not limited in any way, and in the illustrated example, it is a strip extending in the y direction. The size of the first insulating spacer 61 in the z direction is, for example, 100 μm or more and 5000 μm or less. The first insulating spacer 61 is in contact with the first main surface 111A of the first metal layer 111. The first insulating spacer 61 is in contact with the first portion 1311. Note that a configuration may be adopted in which a portion of the sealing resin 50 penetrates between the first insulating spacer 61 and the first portion 1311. The portions of the multiple second connection members 15 connected to the first portion 1311 overlap the first insulating spacer 61 when viewed in the z direction.

[0058] Second insulating spacer 62: As shown in FIGS. 1 , 4 to 6 , 8 , and 9 , the second insulating spacer 62 is interposed between the first metal layer 111 and the second conductive member 171. The second insulating spacer 62 is interposed between the first metal layer 111 and the fourth conductive member 181. The second insulating spacer 62 is made of an insulating material, such as epoxy resin or silicone resin. The second insulating spacer 62 may have an insulating layer provided on the surface of a conductive core material. The static friction coefficients between the second insulating spacer 62 and the first metal layer 111, the second insulating spacer 62 and the second conductive member 171, and the second insulating spacer 62 and the fourth conductive member 181 are preferably greater than the static friction coefficients between the first metal layer 111 and the second conductive member 171 and the first metal layer 111 and the fourth conductive member 181. The glass transition point of the second insulating spacer 62 is preferably higher than the glass transition point of the sealing resin 50 .

[0059] The shape of the second insulating spacer 62 is not limited in any way, and in the illustrated example, it is a strip extending in the y direction. The size of the second insulating spacer 62 in the z direction is, for example, 100 μm or more and 5000 μm or less. The second insulating spacer 62 contacts the first main surface 111A of the first metal layer 111. The second insulating spacer 62 contacts the second conductive member 171 and the fourth conductive member 181. Note that a configuration may be adopted in which a portion of the sealing resin 50 penetrates between the second insulating spacer 62 and the second conductive member 171 or the fourth conductive member 181. Portions of the plurality of third connection members 41 and the plurality of fifth connection members 42 connected to the second conductive member 171 or the fourth conductive member 181 overlap the second insulating spacer 62 when viewed in the z direction.

[0060] Third insulating spacer 63: As shown in FIGS. 1, 4 to 6, 10, and 11, the third insulating spacer 63 is interposed between the second metal layer 121 and the third conductive member 172. The third insulating spacer 63 is interposed between the second metal layer 121 and the fifth conductive member 182. The third insulating spacer 63 is made of an insulating material, such as epoxy resin or silicone resin. The third insulating spacer 63 may be configured with an insulating layer provided on the surface of a conductive core material. The static friction coefficients between the third insulating spacer 63 and the second metal layer 121, the third insulating spacer 63 and the third conductive member 172, and the third insulating spacer 63 and the fifth conductive member 182 are preferably greater than the static friction coefficients between the second metal layer 121 and the third conductive member 172 and the second metal layer 121 and the fifth conductive member 182. The glass transition point of the third insulating spacer 63 is preferably higher than the glass transition point of the sealing resin 50 .

[0061] The shape of the third insulating spacer 63 is not limited in any way, and in the illustrated example, it is a strip extending in the y direction. The size of the second insulating spacer 62 in the z direction is, for example, 100 μm or more and 5000 μm or less. The third insulating spacer 63 contacts the second main surface 121A of the second metal layer 121. The third insulating spacer 63 contacts the third conductive member 172 and the fifth conductive member 182. Note that a configuration may be adopted in which a portion of the sealing resin 50 penetrates between the third insulating spacer 63 and the third conductive member 172 or the fifth conductive member 182. Portions of the plurality of fourth connecting members 43 and the plurality of sixth connecting members 44 connected to the third conductive member 172 or the fifth conductive member 182 overlap the third insulating spacer 63 when viewed in the z direction.

[0062] In the manufacturing method of the semiconductor device A10, at least one of the first insulating spacer 61 and the second insulating spacer 62 can be placed on the first main surface 111A of the first metal layer 111, for example, after mounting a plurality of first semiconductor elements 21 on the first metal layer 111. The third insulating spacer 63 can be placed on the second main surface 121A of the second metal layer 121 after mounting a plurality of second semiconductor elements 22 on the second metal layer 121. The first portion 1311 of the extension portion 131 of the first conductive member 13 is disposed on the first insulating spacer 61. The second conductive member 171 and the fourth conductive member 181 are disposed on the second insulating spacer 62. The third conductive member 172 and the fifth conductive member 182 are disposed on the third insulating spacer 63.

[0063] Next, one of the plurality of first connection members 14 is connected to each of the first source electrodes 212 of the plurality of first semiconductor elements 21 and the second metal layer 121. One of the plurality of second connection members 15 is connected to each of the second source electrodes 222 of the plurality of second semiconductor elements 22 and the first portion 1311. When the plurality of second connection members 15 are connected to the first portion 1311, the force applied to the first portion 1311 is received by the first insulating spacer 61.

[0064] One of the plurality of third connection members 41 is connected to each first gate electrode 213 of the plurality of first semiconductor elements 21 and the second conductive member 171. When the plurality of third connection members 41 are connected to the second conductive member 171, a force applied to the second conductive member 171 is received by the second insulating spacer 62. One of the plurality of fifth connection members 42 is connected to each first source electrode 212 of the plurality of first semiconductor elements 21 and the fourth conductive member 181. When the plurality of fifth connection members 42 are connected to the fourth conductive member 181, a force applied to the second conductive member 171 and the fourth conductive member 181 is received by the second insulating spacer 62.

[0065] One of the plurality of fourth connection members 43 is connected to each second gate electrode 223 of the plurality of second semiconductor elements 22 and the third conductive member 172. When the plurality of fourth connection members 43 are connected to the third conductive member 172, a force applied to the third conductive member 172 is received by the third insulating spacer 63. One of the plurality of sixth connection members 44 is connected to each second source electrode 222 of the plurality of second semiconductor elements 22 and the fifth conductive member 182. When the plurality of sixth connection members 44 are connected to the fifth conductive member 182, a force applied to the fifth conductive member 182 is received by the third insulating spacer 63.

[0066] After this, the sealing resin 50 is formed by a resin molding process. At this time, a liquid resin material for forming the sealing resin 50 is filled into the space that will become the sealing resin 50. This filling may cause the resin material to penetrate, for example, between the first insulating spacer 61 and the first portion 1311. For example, the resin material may penetrate between the second insulating spacer 62 and the second conductive member 171 and the fourth conductive member 181. For example, the resin material may penetrate between the third insulating spacer 63 and the third conductive member 172 and the fifth conductive member 182. If such penetration of the resin material occurs, part of the sealing resin 50 may be present between the first insulating spacer 61 and the first portion 1311, between the second insulating spacer 62 and the second conductive member 171 and the fourth conductive member 181, and between the third insulating spacer 63 and the third conductive member 172 and the fifth conductive member 182. In some cases, a configuration may exist in which part of the sealing resin 50 is not present between the first insulating spacer 61 and the first portion 1311, between the second insulating spacer 62 and the second conductive member 171 and the fourth conductive member 181, and between the third insulating spacer 63 and the third conductive member 172 and the fifth conductive member 182.

[0067] Next, the operation of the semiconductor device A10 will be described.

[0068] According to this embodiment, a first insulating spacer 61 is interposed between the first main surface 111A of the first metal layer 111 and the first portion 1311 of the extending portion 131 of the first conductive member 13. The first insulating spacer 61 is an insulating member, and therefore can reduce electrical connection between the first metal layer 111 and the extending portion 131. The first insulating spacer 61 can withstand the force applied to the first portion 1311 when connecting the second connecting member 15. Therefore, the second connecting member 15 can be electrically connected more stably.

[0069] The static friction coefficient between the first insulating spacer 61 and the first metal layer 111 and the static friction coefficient between the first insulating spacer 61 and the first conductive member 13 are greater than the static friction coefficient between the first metal layer 111 and the first conductive member 13. This allows the first conductive member 13 to be more stably held by the first insulating spacer 61 when the second connection member 15 is electrically connected. Because the glass transition point of the first insulating spacer 61 is higher than the glass transition point of the sealing resin 50, deformation of the first insulating spacer 61 during the formation of the sealing resin 50 can be reduced.

[0070] Similarly, a second insulating spacer 62 is interposed between the first main surface 111A of the first metal layer 111 and the first gate wiring portion 1712 of the second conductive member 171 and the first detection wiring portion 1812 of the fourth conductive member 181. The second insulating spacer 62 is an insulating member and can reduce electrical connection between the first metal layer 111 and the second conductive member 171 and the fourth conductive member 181. The second insulating spacer 62 can withstand the force applied to the first gate wiring portion 1712 and the first detection wiring portion 1812 when connecting the plurality of third connection members 41 and the plurality of fifth connection members 42. This allows the plurality of third connection members 41 and the plurality of fifth connection members 42 to be more stably conductively connected.

[0071] The static friction coefficient between the second insulating spacer 62 and the first metal layer 111 and the static friction coefficient between the second insulating spacer 62 and the second conductive member 171 and the fourth conductive member 181 are greater than the static friction coefficient between the first metal layer 111 and the second conductive member 171 and the fourth conductive member 181. This allows the first gate wiring portion 1712 and the first detection wiring portion 1812 to be more stably held by the second insulating spacer 62 when conductively connecting the plurality of third connecting members 41 and the plurality of fifth connecting members 42. Because the glass transition point of the second insulating spacer 62 is higher than the glass transition point of the sealing resin 50, deformation of the second insulating spacer 62 during the formation of the sealing resin 50 can be reduced.

[0072] A third insulating spacer 63 is interposed between the second main surface 121A of the second metal layer 121 and the second gate wiring portion 1722 of the third conductive member 172 and the second detection wiring portion 1822 of the fifth conductive member 182. The third insulating spacer 63 is an insulating member, and can reduce electrical connection between the second metal layer 121 and the third conductive member 172 and the fifth conductive member 182. The third insulating spacer 63 can withstand the force applied to the second gate wiring portion 1722 and the second detection wiring portion 1822 when connecting the plurality of fourth connection members 43 and the plurality of sixth connection members 44. This allows for more stable conductive connection between the plurality of fourth connection members 43 and the plurality of sixth connection members 44.

[0073] The static friction coefficients between the third insulating spacer 63 and the second metal layer 121, between the third insulating spacer 63 and the third conductive member 172, and between the third insulating spacer 63 and the fifth conductive member 182 are greater than the static friction coefficients between the second metal layer 121 and the third conductive member 172 and between the second metal layer 121 and the fifth conductive member 182. This allows the second gate wiring portion 1722 and the second detection wiring portion 1822 to be more stably held by the third insulating spacer 63 when conductively connecting the plurality of fourth connecting members 43 and the plurality of sixth connecting members 44. Because the glass transition point of the third insulating spacer 63 is higher than the glass transition point of the sealing resin 50, deformation of the third insulating spacer 63 during the formation of the sealing resin 50 can be reduced.

[0074] 4 to 6 , the first portion 1311 is located between the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 in the z direction. The distance z1 from the first main surface 111A to the first portion 1311 in the z direction is smaller than the distance z0 from the first main surface 111A to the third terminal 132 in the z direction. This makes it possible to reduce the distance in the z direction from the first main surface 111A of the first connection member 14 that straddles the first portion 1311 on one side in the z direction while avoiding contact or short-circuiting between the first connection member 14 and the first portion 1311. This makes it possible to miniaturize the semiconductor device A10 while ensuring proper operation of the semiconductor device A10.

[0075] 1 , the first portion 1311 has a shape that extends in the y direction, which makes it possible to secure a wider area for connecting the plurality of second connection members 15, and to prevent improper conduction between the first connection members 14 and the second connection members 15.

[0076] 5 , the distance z1 in the z direction from first main surface 111A to first portion 1311 is greater than the distance z2 in the z direction from first main surface 111A to one side end in the z direction of first semiconductor element 21. This makes it possible to prevent first portion 1311 from interfering unduly with multiple first semiconductor elements 21, for example.

[0077] 1 , the second portion 1312 is located on one side in the y direction with respect to the multiple first semiconductor elements 21. Therefore, there is no need to ensure space between adjacent first semiconductor elements 21 to arrange the second portion 1312. This is therefore advantageous for miniaturizing the semiconductor device A10.

[0078] The extending portion 131 has a bent shape and includes the third portion 1313. This makes it possible to prevent the extending portion 131 from becoming large while arranging the first portion 1311 and the second portion 1312 at different positions in the z direction.

[0079] The plurality of second connection members 15 are separate from the extending portion 131 (first portion 1311) of the first conductive member 13, and in this embodiment, may be wires. This configuration makes it possible to reduce the width (diameter) of the second connection members 15. The second connection members 15 can be connected to desired locations on the first portion 1311 and the second source electrode 222 of the second semiconductor element 22, which is preferable for suppressing interference with and short-circuiting with the first connection members 14, for example.

[0080] The first portion 1311 overlaps the first main surface 111A when viewed in the z direction, which makes it easier to ensure a space for connecting the multiple first connection members 14 to the second main surface 121A.

[0081] 12 to 17 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals. The configurations of the various parts in each of the modified examples and embodiments can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0082] 12 shows a first modification of the semiconductor device A10. The semiconductor device A11 of this modification differs from the above-described example in the configurations of the first insulating spacer 61, the second insulating spacer 62, and the third insulating spacer 63.

[0083] In this modification, the first insulating spacer 61 has a recess 611. The recess 611 is recessed in the z direction and, in the illustrated example, is a groove extending along the y direction. At least a portion of the first portion 1311 of the extension portion 131 of the first conductive member 13 is accommodated in the recess 611. The depth of the recess 611 in the z direction is, for example, not less than 50 μm and not more than 4950 μm.

[0084] In the illustrated example, a portion of the sealing resin 50 is interposed between the inner surface of the recess 611 and the first portion 1311. This configuration is formed by allowing a resin material to enter between the inner surface of the recess 611 and the first portion 1311 when the size of the recess 611 in the x direction is set to be larger than the size of the first portion 1311 in the x direction in the manufacturing method of the semiconductor device A11. However, the inner surface of the recess 611 and the first portion 1311 may be in contact with each other.

[0085] In this modification, the second insulating spacer 62 has recesses 621 and 622. The recesses 621 and 622 are recessed in the z direction and, in the illustrated example, are grooves extending along the y direction. At least a portion of the second conductive member 171 is housed in the recess 621, and at least a portion of the fourth conductive member 181 is housed in the recess 622. The depth of the recesses 621 and 622 in the z direction is, for example, not less than 50 μm and not more than 4950 μm.

[0086] In the illustrated example, a portion of the sealing resin 50 is interposed between the inner surfaces of the recesses 621 and 622 and the second conductive member 171 and the fourth conductive member 181. This configuration is formed by allowing a resin material to enter between the inner surfaces of the recesses 621 and 622 and the first gate wiring portion 1712 and the first detection wiring portion 1812 in the manufacturing method of the semiconductor device A11 when the size in the x direction of the recesses 621 and 622 is set to be larger than the size in the x direction of the first gate wiring portion 1712 of the second conductive member 171 and the first detection wiring portion 1812. However, the inner surfaces of the recesses 621 and 622 and the first gate wiring portion 1712 and the first detection wiring portion 1812 may be in contact with each other.

[0087] In this modification, the third insulating spacer 63 has recesses 631 and 632. The recesses 631 and 632 are recessed in the z direction and, in the illustrated example, are grooves extending along the y direction. At least a portion of the third conductive member 172 is housed in the recess 631, and at least a portion of the fifth conductive member 182 is housed in the recess 632. The depth of the recesses 631 and 632 in the z direction is, for example, not less than 50 μm and not more than 4950 μm.

[0088] In the illustrated example, a portion of the sealing resin 50 is interposed between the inner surfaces of the recesses 631 and 632 and the third conductive member 172 and the fifth conductive member 182. This configuration is formed by allowing a resin material to enter between the inner surfaces of the recesses 631 and 632 and the second gate wiring portion 1722 and the second detection wiring portion 1822 in the manufacturing method of the semiconductor device A11 when the size in the x direction of the recesses 631 and 632 is set to be larger than the size in the x direction of the second gate wiring portion 1722 of the third conductive member 172 and the second detection wiring portion 1822. However, the inner surfaces of the recesses 631 and 632 and the second gate wiring portion 1722 and the second detection wiring portion 1822 may be in contact with each other.

[0089] This modification also allows for more stable conductive connection among the second connection member 15, the third connection member 41, the fifth connection member 42, the fourth connection member 43, and the sixth connection member 44. According to this modification, the recess 611 is provided in the first insulating spacer 61, thereby enabling more stable holding of the second connection member 15. The recesses 621 and 622 are provided in the second insulating spacer 62, thereby enabling more stable holding of the second conductive member 171 and the fourth conductive member 181. The recesses 631 and 632 are provided in the third insulating spacer 63, thereby enabling more stable holding of the third conductive member 172 and the fifth conductive member 182.

[0090] 13 shows a second modification of the semiconductor device A10. The semiconductor device A12 of this modification differs from the semiconductor device A11 described above in the configurations of the first insulating spacer 61, the second insulating spacer 62, and the third insulating spacer 63.

[0091] In this modification, the inner surface of the recess 611 contacts the first portion 1311 of the extending portion 131 of the first conductive member 13. The inner surfaces of the recesses 621 and 622 contact the first gate wiring portion 1712 of the second conductive member 171 and the first detection wiring portion 1812 of the fourth conductive member 181. The inner surfaces of the recesses 631 and 632 contact the second gate wiring portion 1722 of the third conductive member 172 and the second detection wiring portion 1822 of the fifth conductive member 182.

[0092] In this modification, for example, in the manufacturing method of semiconductor device A12, a paste-like resin material for forming first insulating spacer 61, second insulating spacer 62, and third insulating spacer 63 is applied in stripes on first main surface 111A and second main surface 121A. Next, first portion 1311 of extension portion 131 of first conductive member 13, first gate wiring portion 1712 of second conductive member 171, first detection wiring portion 1812 of fourth conductive member 181, second gate wiring portion 1722 of third conductive member 172, and second detection wiring portion 1822 of fifth conductive member 182 are placed on the resin material. At this time, the first portion 1311 of the extending portion 131 of the first conductive member 13, the first gate wiring portion 1712 of the second conductive member 171, the first detection wiring portion 1812 of the fourth conductive member 181, the second gate wiring portion 1722 of the third conductive member 172, and the second detection wiring portion 1822 of the fifth conductive member 182 are slightly embedded in the resin material. Next, the resin material is hardened by heating, ultraviolet light irradiation, leaving it for a predetermined period of time, or the like, thereby forming the first insulating spacer 61, the second insulating spacer 62, and the third insulating spacer 63 of the configuration of this modified example.

[0093] This modification also allows for more stable conductive connection among the second connecting member 15, the third connecting member 41, the fifth connecting member 42, the fourth connecting member 43, and the sixth connecting member 44. The inner surface of the recess 611 contacts the first portion 1311 of the extending portion 131 of the first conductive member 13, the inner surfaces of the recesses 621 and 622 contact the first gate wiring portion 1712 of the second conductive member 171 and the first detection wiring portion 1812 of the fourth conductive member 181, and the inner surfaces of the recesses 631 and 632 contact the second gate wiring portion 1722 of the third conductive member 172 and the second detection wiring portion 1822 of the fifth conductive member 182, thereby enabling the first conductive member 13, the second conductive member 171, the fourth conductive member 181, the third conductive member 172, and the fifth conductive member 182 to be held more stably.

[0094] 14 shows a third modification of the semiconductor device A10. The semiconductor device A13 of this modification differs from the above-described example in the relationship between the first portion 1311 and the first and second metal layers 111 and 121.

[0095] In this modification, the first portion 1311 overlaps with the second main surface 121A (second metal layer 121) when viewed in the z direction. In the illustrated example, one edge of the first portion 1311 in the x direction overlaps with one edge of the second main surface 121A in the x direction, or is located on the other side in the x direction of the one edge of the second main surface 121A in the x direction.

[0096] In this modification, the first insulating spacer 61 is interposed between the second main surface 121 A of the second metal layer 121 and the first portion 1311 of the extending portion 131 of the first conductive member 13 .

[0097] This modification also enables a more stable conductive connection among the second connecting member 15, the third connecting member 41, the fifth connecting member 42, the fourth connecting member 43, and the sixth connecting member 44. As can be understood from this modification, the first portion 1311 may be configured to overlap with the first main surface 111A or may be configured to overlap with the second main surface 121A when viewed in the z direction.

[0098] Second Embodiment: Figures 15 to 17 show a semiconductor device according to a second embodiment of the present disclosure. A semiconductor device A20 of this embodiment differs from the above-described embodiments in the configuration of the first conductive member 13 and the plurality of second connection members 15. Figure 15 is a plan view showing the semiconductor device A20. Figure 16 is a cross-sectional view taken along line XVI-XVI in Figure 15. Figure 17 is a cross-sectional view taken along line XVII-XVII in Figure 15.

[0099] In the present embodiment, the multiple second connection members 15 are formed integrally with the first conductive member 13. More specifically, the multiple second connection members 15 extend from the first conductive member 13 to the other side in the x direction. The multiple second connection members 15 are aligned in the y direction. The distances from the first main surface 111A and the second main surface 121A to the multiple second connection members 15 in the z direction are the same (or approximately the same) as the distance from the first main surface 111A to the first portion 1311 in the z direction.

[0100] The second connection member 15 is joined to the second source electrode 222 of the second semiconductor element 22 by, for example, a conductive bonding layer 28. The conductive bonding layer 28 is, for example, solder. Alternatively, the conductive bonding layer 28 may be a sintered metal containing silver or the like. For this reason, in this embodiment, the first insulating spacer 61 in the above-described embodiment is not provided.

[0101] This embodiment also enables more stable conductive connection among the third connecting member 41, the fifth connecting member 42, the fourth connecting member 43, and the sixth connecting member 44. As can be understood from this embodiment, the semiconductor device according to the present disclosure is not limited to a configuration including all of the first insulating spacer 61, the second insulating spacer 62, and the third insulating spacer 63.

[0102] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways. The present disclosure includes the embodiments described in the following appendices.

[0103] Supplementary Note 1. A semiconductor device comprising: a metal layer; a semiconductor element mounted on the metal layer; a conductive member; a connection member that electrically connects the semiconductor element and the conductive member; and a sealing resin that covers at least a portion of the metal layer, the semiconductor element, the conductive member, and the connection member, wherein the conductive member is spaced apart from the metal layer in a thickness direction of the metal layer, and further comprising an insulating spacer interposed between the metal layer and the conductive member. Supplementary Note 2. The semiconductor device according to Supplementary Note 1, wherein a portion of the connection member connected to the conductive member overlaps with the insulating spacer when viewed in the thickness direction. Supplementary Note 3. The semiconductor device according to Supplementary Note 1 or 2, wherein the insulating spacer is in contact with the metal layer. Supplementary Note 4. The semiconductor device according to any of Supplements 1 to 3, wherein the insulating spacer is in contact with the conductive member. Supplementary Note 5. The semiconductor device according to any of Supplements 1 to 4, wherein the insulating spacer has a recess that accommodates at least a portion of the conductive member. Supplementary Note 6. Appendix 5. The semiconductor device according to Appendix 5, wherein a part of the sealing resin is interposed between the inner side surface of the recess and the conductive member. Appendix 7. The semiconductor device according to Appendix 5, wherein the inner side surface of the recess and the conductive member are in contact. Appendix 8. The semiconductor device according to any of Appendixes 1 to 7, wherein the connecting member is a wire. Appendix 9. The semiconductor device according to any of Appendixes 1 to 8, wherein a first static friction coefficient between the insulating spacer and the connecting member and a second static friction coefficient between the insulating spacer and the metal layer are greater than a third static friction coefficient between the connecting member and the metal layer. Appendix 10. The semiconductor device according to any of Appendixes 1 to 9, wherein a glass transition point of the insulating spacer is higher than a glass transition point of the sealing resin.Supplementary Note 11. The semiconductor device according to any one of Supplementary Notes 1 to 10, comprising: a plurality of first semiconductor elements each having a first drain electrode, a first source electrode, and a first gate electrode; a first metal layer to which the first drain electrodes of the plurality of first semiconductor elements are conductively joined; a plurality of second semiconductor elements each having a second drain electrode, a second source electrode, and a second gate electrode; a second metal layer to which the second drain electrodes of the plurality of second semiconductor elements are conductively joined; a first conductive member, a second conductive member, and a third conductive member; a plurality of first connection members that conductively connect the first source electrodes of the plurality of first semiconductor elements to the second metal layer; a plurality of second connection members that conductively connect the second source electrodes of the plurality of second semiconductor elements to the first conductive member; a plurality of third connection members that conductively connect the first gate electrodes of the plurality of first semiconductor elements to the second conductive member; and a plurality of fourth connection members that conductively connect the second gate electrodes of the plurality of second semiconductor elements to the third conductive member. The semiconductor device according to Appendix 11, comprising a first insulating spacer interposed between the first metal layer and the third conductive member. Appendix 13. The semiconductor device according to Appendix 11 or 12, comprising a second insulating spacer interposed between the first metal layer and the second conductive member. Appendix 14. The semiconductor device according to any of Appendixes 11 to 13, comprising a third insulating spacer interposed between the second metal layer and the third conductive member. Appendix 15. The semiconductor device according to Appendix 13, comprising: a fourth conductive member; and a plurality of fifth connection members that conductively connect the first source electrodes of the plurality of first semiconductor elements to the fourth conductive member, wherein the second insulating spacer is further interposed between the first metal layer and the fourth conductive member. Appendix 16. The semiconductor device according to Appendix 14, comprising: a fifth conductive member; and a plurality of sixth connection members that conductively connect the second source electrodes of the plurality of second semiconductor elements to the fifth conductive member, wherein the third insulating spacer is further interposed between the second metal layer and the fifth conductive member.Appendix 17. The semiconductor device according to any one of appendices 11 to 16, comprising: a first terminal electrically connected to the first metal layer and exposed from the sealing resin; a second terminal electrically connected to the second metal layer and exposed from the sealing resin; and a third terminal electrically connected to the first conductive member and exposed from the sealing resin.

[0104] A10, A11, A12, A13, A20: semiconductor device 10A, 10B: support member 11, 12: conductive member 13: first conductive member 14: first connecting member 15: second connecting member 19: dummy terminal 21: first semiconductor element 22: second semiconductor element 28: conductive bonding layer 29: conductive bonding layer 41: third connecting member 42: fifth connecting member 43: fourth connecting member 44: sixth connecting member 50: sealing resin 51: top surface 52: bottom surface 53: first side surface 54: second side surface 55: third side surface 56: fourth side surface 61: first insulating spacer 62: second insulating spacer 63: third insulating spacer 101: insulating layer 102: support layer 103: heat dissipation layer 111: first metal layer 111A: first main surface 112: First terminal 112A: First mounting hole 113: First dunnage material 121: Second metal layer 121A: Second main surface 122: Second terminal 122A: Second mounting hole 123: Second dunnage material 131: Extension portion 132: Third terminal 132A: Third mounting hole 171: Second conductive member 172: Third conductive member 181: Fourth conductive member 182: Fifth conductive member 211: First drain electrode 212: First source electrode 213: First gate electrode 221: Second drain electrode 222: Second source electrode 223: Second gate electrode 611, 621, 622, 631, 632: Recess 1311: First portion 1312: Second portion 1313: Third portion 1711: First gate terminal 1712: First gate wiring section 1713: Step section 1721: Second gate terminal 1722: Second gate wiring section 1723: Step section 1811: First detection terminal 1812: First detection wiring section 1813: Step section 1821: Second detection terminal 1822: Second detection wiring section 1823: Step section z0, z1, z2: Distance

Claims

1. A metal layer; a plurality of semiconductor elements mounted on the metal layer; A conductive member; a plurality of connection members that electrically connect the plurality of semiconductor elements and the conductive member and are spaced apart from the metal layer in a thickness direction of the metal layer; a sealing resin that covers at least a portion of each of the metal layer, the semiconductor elements, the conductive member, and the connection members; an insulating spacer interposed between the metal layer and the conductive member.

2. The semiconductor device according to claim 1 , wherein a portion of said plurality of connection members connected to said conductive member overlaps with said insulating spacer when viewed in the thickness direction.

3. The semiconductor device according to claim 1 , wherein the insulating spacer is in contact with the metal layer.

4. The semiconductor device according to claim 1 , wherein the insulating spacer is in contact with the conductive member.

5. 5. The semiconductor device according to claim 1, wherein said insulating spacer has a recess for accommodating at least a portion of said conductive member.

6. The semiconductor device according to claim 5 , wherein a part of the sealing resin is interposed between an inner side surface of the recess and the conductive member.

7. The semiconductor device according to claim 5 , wherein an inner side surface of said recess contacts said conductive member.

8. 5. The semiconductor device according to claim 1, wherein each of said plurality of connection members is a wire.

9. 5. The semiconductor device according to claim 1, wherein a first static friction coefficient between said insulating spacer and said plurality of connecting members and a second static friction coefficient between said insulating spacer and said metal layer are greater than a static friction coefficient between said plurality of connecting members and said metal layer.

10. 5. The semiconductor device according to claim 1, wherein the insulating spacer has a glass transition point higher than a glass transition point of the sealing resin.

11. The plurality of semiconductor elements include a plurality of first semiconductor elements each having a first drain electrode, a first source electrode, and a first gate electrode; a plurality of second semiconductor elements each having a second drain electrode, a second source electrode, and a second gate electrode; The metal layer is a first metal layer to which the first drain electrodes of the first semiconductor elements are conductively joined; a second metal layer to which the second drain electrodes of the second semiconductor elements are conductively joined; The conductive member is A first conductive member; A second conductive member; a third conductive member, The plurality of connection members include a plurality of first connection members that electrically connect the first source electrodes of the plurality of first semiconductor elements to the second metal layer; a plurality of second connection members that electrically connect the second source electrodes of the plurality of second semiconductor elements to the first conductive member; a plurality of third connection members that electrically connect the first gate electrodes of the plurality of first semiconductor elements to the second conductive member; a plurality of fourth connection members that electrically connect the second gate electrodes of the plurality of second semiconductor elements to the third conductive member; 5. The semiconductor device according to claim 1.

12. The semiconductor device of claim 11 further comprising a first insulating spacer interposed between the first metal layer and the first conductive member.

13. The semiconductor device of claim 11 further comprising a second insulating spacer interposed between the first metal layer and the second conductive member.

14. The semiconductor device of claim 11 further comprising a third insulating spacer interposed between the second metal layer and the third conductive member.

15. A fourth conductive member; a plurality of fifth connection members that electrically connect the first source electrodes of the plurality of first semiconductor elements to the fourth conductive member; The semiconductor device according to claim 13 , wherein the second insulating spacer is interposed between the first metal layer and the fourth conductive member.

16. A fifth conductive member; a plurality of sixth connection members that electrically connect the second source electrodes of the plurality of second semiconductor elements to the fifth conductive member; The semiconductor device according to claim 14 , wherein the third insulating spacer is interposed between the second metal layer and the fifth conductive member.

17. a first terminal that is electrically connected to the first metal layer and is exposed from the sealing resin; a second terminal that is electrically connected to the second metal layer and is exposed from the sealing resin; The semiconductor device according to claim 11 , further comprising: a third terminal electrically connected to said first conductive member and exposed from said sealing resin.