Thin wiring member production method, thin wiring member, and wiring board production method

Abstract

Disclosed is a method for producing a plurality of thin wiring members. This thin wiring member production method comprises: a step for producing, on a first carrier, a wiring layer that has a plurality of wiring parts which correspond to a plurality of thin wiring members and an insulating part that exists in the periphery of the plurality of wiring parts; a step for cutting the wiring layer such that each has at least one of the plurality of wiring parts; a step for affixing a second carrier to a second surface of the wiring layer that is opposite to the first surface on which the first carrier is provided; a step for peeling the first carrier from the wiring layer; a step for forming, with laser light, a modification region to become the starting point of a fracture, in an inner region of the second carrier which corresponds to a site at which the wiring layer was cut; and a step for expanding, in a planar direction, the second carrier in which the modification region was formed to divide the second carrier into a plurality of carrier parts.

Description

Manufacturing method of thin wiring member, manufacturing method of thin wiring member, and manufacturing method of wiring board

[0001] The present disclosure relates to a method for manufacturing a thin wiring member, a method for manufacturing a thin wiring member, and a method for manufacturing a wiring board.

[0002] Patent Document 1 discloses an example of a fan-out type semiconductor device, in which a rewiring layer is provided between a semiconductor chip and an external connection terminal, and the rewiring layer widens the spacing between the terminals of the semiconductor chip for connection to the external connection terminal.

[0003] Japanese Patent Application Laid-Open No. 2019-029557

[0004] In conventional methods, a rewiring layer is formed on a substrate. However, due to factors such as large variations in substrate height, it can be difficult to achieve finer wiring in the rewiring layer. Therefore, a method has been considered in which a rewiring layer consisting of fine wiring is formed by patterning on a flat glass carrier and then transferred. As an example of this method, as shown in FIG. 8 , a rewiring layer 510 is formed on a first glass carrier 500, and then a second glass carrier 520 is formed on the rewiring layer 510. The rewiring layer 510 is then sandwiched between the first glass carrier 500 and the second glass carrier 520, and then singulated with a dicing blade D. However, with this method, cracks C1 may occur in the second glass carrier 520 when the second glass carrier 520 is cut with the dicing blade D. This results in insufficient strength and contamination. Furthermore, chipping C2 may occur in the second glass carrier 520. This not only results in insufficient strength as a carrier, but also damage to the wiring layer and contamination. It is possible to prevent the occurrence of cracks C1 or chipping C2 by setting the feed speed to 1 mm / sec when cutting the second glass carrier 520 with the dicing blade D. However, in this case, the feed speed becomes very slow, which significantly reduces the manufacturing efficiency of the thin wiring member.

[0005] An object of the present disclosure is to provide a method for manufacturing a thin wiring member, a method for manufacturing a thin wiring member, and a method for manufacturing a wiring board, which are capable of manufacturing a thin wiring member while suppressing the occurrence of contamination.

[0006] The present disclosure relates to a method for manufacturing a thin wiring member, comprising the steps of: forming a wiring layer on a first carrier, the wiring layer having a plurality of wiring portions corresponding to a plurality of thin wiring members and insulating portions surrounding the plurality of wiring portions; cutting the wiring layer so that each of the wiring portions has at least one of the plurality of wiring portions; bonding second carriers to a second surface of the wiring layer opposite the first surface on which the first carrier is provided; peeling the first carrier from the wiring layer; forming modified regions that serve as fracture initiation points in an internal region of the second carrier corresponding to the cut portions of the wiring layer using a laser beam; and expanding the second carrier with the modified regions formed along a surface direction to divide the second carrier into a plurality of carrier portions.

[0007] This method for manufacturing a thin wiring member includes, in addition to the step of cutting the wiring layer, the steps of forming a modified region, which serves as a fracture initiation point, using a laser beam in an internal region of the second carrier corresponding to the cut portion of the wiring layer, and expanding the second carrier with the modified region formed along the surface direction to divide the second carrier into multiple carrier portions. In this method, instead of using a dicing blade to divide the second glass carrier, a fracture initiation point is formed using a laser beam, and the second glass carrier is fractured from the fracture initiation point during expansion. This is a laser dicing process known as stealth dicing, and using this processing method can prevent cracks and chipping from occurring in the divided second glass carrier. This makes it possible to manufacture a thin wiring member while suppressing the occurrence of contamination. Furthermore, this method for manufacturing a thin wiring member prevents cracks and chipping from occurring when dividing the second glass carrier, thereby preventing a decrease in the strength of the glass carrier. Furthermore, according to this method for manufacturing a thin wiring member, cracks and chipping do not occur when the second glass carrier is divided, so that damage to the wiring portion of the thin wiring member can be prevented.

[0008] In the above-described method for manufacturing a thin wiring member, the cutting step may involve cutting the wiring layer with a laser or a dicing blade. The wiring layer to be cut is a thin member, e.g., 10 to 50 μm thick, formed from an adhesive or elastic material and having an unstable shape. However, when cutting such a wiring layer, if the cutting portion is made of resin only, the wiring layer can be cut very quickly and accurately by using laser ablation technology. On the other hand, if the resin in the cutting portion contains a metal layer, the wiring layer can be cut efficiently by using a dicing blade with a wide processing margin, even if the resin contains a metal layer.

[0009] In the method for manufacturing the thin wiring member described above, the cutting step may be performed while the wiring layer is supported by the first carrier. As described above, the wiring layer to be cut is a member having an unstable shape. However, by cutting the wiring layer while it is supported by the first carrier, it is possible to cut it with high precision.

[0010] In the above-described method for manufacturing a thin wiring member, the cutting step may involve cutting the wiring layer using an ablation laser, and the peeling step may involve recovering the peeled first carrier for reuse. In this case, the cutting step may involve damaging the first carrier or minimizing damage. This manufacturing method therefore makes it possible to reuse the first carrier used in fabricating the rewiring layer, thereby reducing the burden on the environment.

[0011] In the method for manufacturing a thin wiring member described above, the cutting step may be performed after the second carrier is bonded to the wiring layer. In this case, the first carrier can be prevented from being damaged by cutting in the cutting step. As a result, this manufacturing method makes it possible to reuse the first carrier used in manufacturing the rewiring layer, thereby reducing the burden on the environment.

[0012] In the above-described method for manufacturing a thin wiring member, the step of forming a modified region may be performed after the step of peeling off the first carrier. When the wiring layer is cut with a laser or a blade, processing marks may remain on the mounting surface of the first carrier. In this case, if an attempt is made to form a modified region with laser light from the first carrier side, these processing marks may prevent the laser light from forming an appropriate modified region. Therefore, by peeling off the first carrier and then forming the modified region on the second carrier, it is possible to prevent such manufacturing defects and ensure the modified region is formed on the second carrier.

[0013] In the method for manufacturing a thin wiring member described above, the step of forming the modified region may be performed before the step of peeling off the first carrier.

[0014] In the above-described method for manufacturing a thin wiring member, the method for peeling the first carrier from the wiring layer may be different from the mechanism by which the second carrier or carrier portion is peeled. In this case, peeling the first carrier can prevent the second carrier, which is necessary for subsequent processes, from being peeled, thereby more reliably manufacturing a thin wiring member. Furthermore, the different peeling method makes it easier to peel the first carrier.

[0015] In the above-described method for manufacturing a thin wiring member, the second carrier may be a glass carrier having a thickness of 0.3 mm to 1.1 mm, which increases the flexibility of the manufacturing method for forming the modified region and makes it easier to perform laser irradiation or the like when peeling the carrier portion from the wiring portion after using the thin wiring member as a component.

[0016] In the above-described method for manufacturing a thin wiring member, the second carrier may be a silicon substrate.

[0017] The method for manufacturing the thin wiring member may further include a step of attaching a dicing tape to a surface of the second carrier opposite to the surface on which the wiring layer is attached, and in the dividing step, the second carrier may be expanded by spreading the dicing tape. In this case, the second carrier having the modified region formed thereon can be easily divided by a simple means.

[0018] In another aspect, the present disclosure relates to a thin wiring member. The thin wiring member includes a wiring layer having a resin composition or a cured product thereof present on and around the wiring, and a support layer provided on one side of the wiring layer, the support layer being a glass carrier. In this case, when a wiring board or a semiconductor device is fabricated using the thin wiring member, the thin wiring member can be prevented from warping or curling, and its shape can be stabilized.

[0019] In the above-mentioned thin wiring member, the thickness of the wiring layer may be 200 μm or less, the thickness of the support layer may be 0.3 mm or more and 1.1 mm or less, and the wiring layer may have wiring with a line width of 5 μm. In this case, a thin wiring member having fine wiring can be obtained.

[0020] In yet another aspect, the present disclosure relates to a method for manufacturing a wiring board, the method comprising the steps of: preparing a thin wiring member manufactured by any of the above-described methods for manufacturing a thin wiring member; arranging the thin wiring member on or within a substrate; and connecting wires of the thin wiring member to connection terminals.

[0021] According to the present disclosure, it is possible to manufacture a thin wiring member while suppressing the occurrence of contamination.

[0022] FIG. 1 is a cross-sectional view showing an example of a thin wiring member. FIGS. 2A to 2D are diagrams sequentially showing a method for manufacturing a thin wiring member according to the first embodiment. FIGS. 3A to 3C are diagrams sequentially showing a method for manufacturing a thin wiring member according to the first embodiment, showing steps performed subsequent to the steps shown in FIG. 2. FIGS. 4A to 4C are diagrams sequentially showing a method for manufacturing a thin wiring member according to the first embodiment, showing steps performed subsequent to the steps shown in FIG. 3. FIGS. 5A to 5C are diagrams sequentially showing a method for manufacturing a thin wiring member according to the second embodiment. FIGS. 6A to 6D are diagrams sequentially showing a method for manufacturing a thin wiring member according to the third embodiment. FIGS. 7A to 7D are diagrams sequentially showing an example of a method for manufacturing a wiring board using a thin wiring member. FIGS. 8A to 8C are diagrams sequentially showing an example of a method for manufacturing a thin wiring member.

[0023] Hereinafter, the present embodiment will be described in detail with reference to the drawings. In the following description, the same or equivalent parts will be denoted by the same reference numerals, and duplicated explanations will be omitted. Furthermore, unless otherwise specified, the positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings. Furthermore, the dimensional ratios of the drawings are not limited to those shown in the drawings.

[0024] When terms such as "left," "right," "front," "back," "top," "bottom," "upper," "lower," "first," and "second" are used in this specification and claims, they are intended for descriptive purposes and do not necessarily mean that these relative positions are permanent. The term "layer" encompasses not only structures that are formed over the entire surface when viewed in a plan view, but also structures that are formed only on a portion of the surface. The term "process" includes not only independent processes but also processes that cannot be clearly distinguished from other processes, as long as the intended purpose of the process is achieved. Numerical ranges indicated using "to" indicate ranges that include the numerical values ​​before and after "to" as minimum and maximum values, respectively. Furthermore, in numerical ranges described in stages in this specification, the upper or lower limit of a certain numerical range may be replaced with the upper or lower limit of another numerical range.

[0025] [Configuration of Thin Wiring Member] FIG. 1 is a cross-sectional view showing an example of a thin wiring member. As shown in FIG. 1, the thin wiring member 1 is a member used to form, for example, a redistribution layer (RDL) of a wiring portion of a wiring substrate 300 (described later) (see FIG. 7). However, the thin wiring member 1 may also be used for wiring or connection thereof in a semiconductor device or the like. The thin wiring member 1 includes a fine wiring layer 10 and a support layer 20. The thin wiring member 1 may further include an adhesive layer 30 (see FIG. 7) for adhering the thin wiring member 1 to a wiring substrate or the like, and the adhesive layer 30 can be attached to the support layer 20. The adhesive layer 30 can be formed, for example, from an epoxy resin and can be composed of a die attach film (DAF) or the like. The thin wiring member 1 is a minute wiring member that can be embedded in various wiring substrates or semiconductor devices, and may have, for example, a rectangular shape of 50 mm long x 50 mm wide when viewed in a plan view, or a rectangular shape of 20 mm long x 20 mm wide. The thin wiring member 1 is a thin wiring member, and has a fine wiring layer 10 with a thickness of about 50 μm, and the overall thickness is thin, for example, 30 μm to 1 mm. The thickness of the fine wiring layer 10 is, for example, 200 μm or less. Because of this thickness, the thin wiring member 1 has characteristics such as being prone to curling and being difficult to handle.

[0026] The fine wiring layer 10 is formed by providing copper wiring 14 (wiring) having a three-dimensional wiring configuration within the insulating layer 12 (insulating portion). The copper wiring 14 is a wiring having a fine line width of, for example, 0.5 to 5 μm. The copper wiring 14 preferably has a fine line width of 0.7 to 4 μm, and more preferably has a fine line width of 1 to 3 μm. The connection ends 14 a of the copper wiring 14 are exposed to the outside from the first surface 10 a of the fine wiring layer 10. The connection ends 14 a of the copper wiring 14 are electrically and mechanically connected to connection terminals. The second surface 10 b of the fine wiring layer 10 is adhesively fixed to the first surface 20 a of the support layer 20. The copper wiring 14 forms a three-dimensional wiring layer by sequentially stacking each wiring layer from the second surface 10 b to the first surface 10 a, as described below.

[0027] The insulating layer 12 is formed by stacking multiple layers. For example, from the viewpoint of forming fine vias and grooves, each layer may have a thickness of 10 μm or less, or may have a thickness of 5 μm or less. The insulating layer 12 is formed so as to fill the periphery of the copper wiring 14 and exist around the copper wiring 14. On the other hand, from the viewpoint of electrical reliability, each layer of the insulating layer 12 may have a thickness of 1 μm or more. The insulating layer 12 as a whole may have a thickness of 10 to 200 μm or may have a thickness of 10 to 100 μm. Furthermore, from the viewpoint of suppressing warpage, the insulating layer 12 may have a thermal expansion coefficient (after curing) of, for example, 80 ppm / °C or less. From the viewpoint of suppressing peeling or cracking during a reflow process and a temperature cycle test, the insulating layer 12 may have a thermal expansion coefficient (after curing) of, for example, 70 ppm / °C or less. On the other hand, from the viewpoint of improving stress relaxation properties and forming fine vias or grooves, insulating layer 12 may have a linear expansion coefficient (after curing) of 20 ppm / ° C. or more. The linear expansion coefficient of insulating layer 12 may be the same as, or may be smaller or larger than, the linear expansion coefficient of support layer 20.

[0028] The insulating layer 12 is made of a material such as a polyimide resin, a maleimide resin, an epoxy resin, a phenoxy resin, a polybenzoxazole resin, an acrylic resin, or an acrylate resin. The insulating layer 12 may contain a filler, and the average particle size of the filler may be 500 nm or less in order to enable the formation of fine details. The filler may be contained in the insulating layer 12 so that the filler content relative to the total amount of insulating material is less than 1 mass %. The insulating layer 12 may not contain a filler. The insulating layer 12 is formed from the above-mentioned material, is a layer having adhesiveness and elasticity, and is formed as a shape-unstable member.

[0029] The support layer 20 is a layer that supports the microwiring layer 10, including the insulating layer 12, which is an unstable member, and is made of a material harder than the resin composition of the insulating layer 12 or its cured product. Specifically, the support layer 20 is formed of a material having a flexural modulus of 3 GPa or more (or a flexural strength of 700 MPa or more). The support layer 20 can be formed of, for example, a glass carrier. The support layer 20 may also be formed of a silicon substrate. The thickness of the support layer 20 may be thinner than the microwiring layer 10, or conversely, may be thicker than the microwiring layer 10. The thickness of the support layer 20 may be, for example, 0.3 mm or more and 1.1 mm or less. The thickness of the support layer 20 may be, for example, 25 to 3000% of the thickness of the microwiring layer 10. The thermal expansion coefficient of the support layer 20 may be 5 to 50 ppm / °C. By having the support layer 20 have such a thermal expansion coefficient, warping and the like can be suppressed.

[0030] [First Embodiment] Next, a method for manufacturing a thin wiring member according to the first embodiment will be described with reference to FIGS. 2, 3, and 4. FIGS. 2 to 4 are diagrams sequentially illustrating the method for manufacturing the thin wiring member shown in FIG. 1. As shown in FIG. 2A, first, a first carrier 100 is prepared. The first carrier 100 is, for example, a glass substrate having a thickness of 0.7 mm to 1.1 mm and a flatness of 50 nm or less (arithmetic mean roughness). The first carrier 100 is, for example, wafer-shaped or panel-shaped, and is not particularly limited. For example, it may be a circular wafer with a diameter of 200 mm, 300 mm, or 450 mm, or a rectangular panel with a side length of 200 to 700 mm. A temporary fixing material may be attached to the first carrier 100. The temporary fixing material is a resin layer for temporarily fixing an object on the first carrier 100, and is configured to allow the object, once fixed by heating or laser, to be peeled off in a subsequent process.

[0031] 2B, a fine wiring layer 110 corresponding to the fine wiring layer 10 is formed on the first carrier 100. The method for forming the fine wiring layer 110 is not particularly limited, but a semi-additive process (SAP) or a trench method can be used. When forming a seed layer, there is no particular limit as long as the method can form a metal layer on the surface of the first carrier 100, but electroless plating or sputtering can be used.

[0032] In one example of a method for producing the micro-wiring layer 110, a metal layer (seed layer) is first formed on the first carrier 100. The method for forming the metal layer by electroless plating is not particularly limited, but may include roughening the surface of the first carrier 100 (e.g., the resin surface of a temporary fixing material) by desmearing or plasma, and then forming the metal layer on the roughened surface. A preferred method for forming micro-wiring with a good yield is to form the metal layer by increasing the surface energy of the surface of the first carrier 100 while suppressing surface roughening by irradiating it with ultraviolet light of 200 nm or less. For example, a low-pressure mercury lamp can be used as a method for irradiating ultraviolet light of 200 nm or less. To suppress surface roughening, the metal layer can also be formed by sputtering. Suppressing surface roughening allows the seed layer to be easily removed. The thickness of the formed metal layer may be 200 nm or less from the viewpoint of improving the yield during micro-wiring formation.

[0033] Next, a resist pattern is formed on the metal layer formed on the first carrier 100. This resist pattern has a space width of, for example, 0.5 to 5 μm in the groove portion. The resist used for the resist pattern may be either a liquid or film resist. The resist pattern can be formed by exposure using a stepper exposure machine and development using an alkaline aqueous solution.

[0034] The vias or grooves in the resist pattern can be formed by laser ablation, photolithography, imprinting, etc., but from the viewpoints of miniaturization and cost, a photolithography process can be used. In this case, a photosensitive resin material can be used as the insulating material. The exposure method for the photosensitive resin material can be a known method such as projection exposure, contact exposure, or direct writing exposure, and the development method can be an alkaline aqueous solution such as sodium carbonate or TMAH. After the vias and grooves are formed, the insulating layer may be further heat-cured. The heating temperature may be 100 to 200°C, and the heating time may be 30 minutes to 3 hours.

[0035] Subsequently, copper wiring portions are formed on the metal layer and in the grooves of the resist pattern by electrolytic plating. From the viewpoint of improving the yield when forming fine wiring, the thickness of the metal layer may be 10 μm or less. When the space width of the resist pattern is 0.5 to 5 μm, the line width of the copper wiring portion in the resist pattern formed by electrolytic plating will also be 0.5 to 5 μm. After the copper wiring portions are formed, the resist pattern is peeled off and the metal layer is removed. The resist pattern is peeled off by a known method. The metal layer is removed using a commercially available etching solution.

[0036] By repeating this process of forming wiring layers, a wiring body S is formed, as shown in FIG. 2B, in which a fine wiring layer 110 is provided on the first carrier 100. While FIG. 2B illustrates an example in which three layers of wiring 114 are stacked, this is not limiting. The wiring 114 has multiple wiring portions 116 corresponding to the copper wiring 14 of the thin wiring member 1. The insulating portion 112, other than the wiring portions 116 of the fine wiring layer 110, is made of an insulating resin material such as polyimide resin, maleimide resin, epoxy resin, phenoxy resin, polybenzoxazole resin, acrylic resin, or acrylate resin. The insulating portion 112 is formed to fill the periphery of each wiring portion 116 and surround each wiring portion 116. Such insulating portion 112 has adhesiveness and elasticity, making its shape prone to instability. After forming the fine wiring layer 110, chemical mechanical polishing (CMP) may be performed to smooth out any surface irregularities.

[0037] Next, as shown in FIG. 2C , the fine wiring layer 110 supported by the first carrier 100 is cut so that each of the plurality of wiring portions 116 has at least one wiring portion 116. In this cutting process, the fine wiring layer 110 is diced with a dicer using a blade D from the upper surface opposite the lower surface supported by the first carrier 100. Cutting with a dicing blade can efficiently cut the fine wiring layer 110 even when the cut portion is made of resin only or when the resin in the cut portion contains a metal layer. Note that by using a dicing blade with a wide processing margin, the fine wiring layer 110 can be reliably cut even when the resin contains a metal layer. The cut fine wiring layer 110A includes a plurality of individual wiring layers 110B, each of which includes a wiring portion 116 and an insulating portion 112a covering the wiring portion 116, and the plurality of individual wiring layers 110B are separated into individual pieces by the cutting regions 118. The insulating portion 112a is a portion obtained by dividing the insulating portion 112. During this dicing, cuts may be made in the first carrier 100 or the temporary fixing material on its upper surface, or the cutting may be performed so that no cuts are made. If there are no cuts or only a few cuts, the first carrier 100 can be reused after being peeled off in a process described below.

[0038] The cutting of the fine wiring layer 110 may be performed using a laser beam L1, as shown in FIG. 2(d). That is, the fine wiring layer 110 supported by the first carrier 100 may be cut with the laser beam L1 so that each of the plurality of wiring portions 116 has at least one wiring portion 116, to form a cut fine wiring layer 110A. If the cut portion of the fine wiring layer 110 is made of resin only, the fine wiring layer 110 can be cut very quickly and accurately by using a laser ablation technique. When cutting the fine wiring layer 110 using the laser beam L1, it is preferable to use an ablation laser, for example. When cutting using the laser beam L1, the surface of the first carrier 100 is less likely to be damaged, making it easier to reuse the first carrier 100.

[0039] Next, once the fine wiring layer 110 is cut into the fine wiring layer 110A, a second carrier 120 is prepared. Then, as shown in FIG. 3A, the second carrier 120 is attached to the upper surface 110b (second surface) of the cut fine wiring layer 110A, opposite the lower surface 110a (first surface). The second carrier 120 may be, for example, a carrier substrate having a thickness of 0.3 mm to 1.1 mm and a flatness of 50 nm or less (arithmetic mean roughness). The second carrier 120 may be thinner than the first carrier 100. The second carrier 120 is preferably a glass substrate, but may also be a silicon substrate. The second carrier 120 is, for example, wafer-shaped or panel-shaped, and is not particularly limited thereto. For example, the second carrier 120 may be a circular wafer having a diameter of 200 mm, 300 mm, or 450 mm, or a rectangular panel having a side length of 200 to 700 mm.

[0040] Next, after the second carrier 120 is bonded to the fine wiring layer 110A, as shown in FIG. 3B , the first carrier 100 is peeled from the fine wiring layer 110A. This peeling may be performed by irradiation with laser light, or by other methods (e.g., peeling by UV irradiation, peeling by heat treatment, removal (peeling) with a blade, or peeling by immersion in water). The method for peeling the first carrier 100 is preferably different from the method (mechanism) for peeling the second carrier 120 in the process described below, but may be the same method. For example, when the first carrier 100 is peeled using UV irradiation, the second carrier 120 is preferably peeled by a method that triggers peeling differently from the first carrier 100, such as heat or a blade. Furthermore, when the first carrier 100 is peeled using a blade or a laser, the second carrier 120 is preferably peeled by a method that triggers peeling differently from the first carrier 100, such as heat or UV irradiation. By using different peeling methods in this way, it is possible to prevent the second carrier 120 from peeling off when peeling the first carrier 100 from the fine wiring layer 110A.

[0041] Next, as shown in FIG. 3C, a dicing tape 130 is attached to the surface 120a of the second carrier 120 supporting the fine wiring layer 110A opposite to the surface to which the fine wiring layer 110A is attached, via an adhesive film.

[0042] Next, as shown in FIG. 4A , a modified region 1220 is formed with laser light L2 in an internal region of the second carrier 120 corresponding to the cut region 118 where the micro-wiring layer 110A was cut (stealth dicing). This modified region 122 is a modified portion that serves as a fracture starting point when the second carrier 120 is expanded in the planar direction. The laser light L2 for forming the modified region 122 may be applied from the micro-wiring layer 110A side or from the dicing tape 130 side. Note that, as shown in FIG. 2C or 2D , when the micro-wiring layer 110 is cut with a laser or blade, processing marks may remain on the mounting surface of the first carrier 100. In this case, if an attempt is made to form the modified region 122 with laser light from the first carrier 100 side in this process, the processing marks may prevent the laser light from forming an appropriate modified region. Therefore, by peeling off the first carrier 100 and then forming the modified region 122 on the second carrier 120, it is possible to prevent such formation defects and to reliably form the modified region 122 on the second carrier 120.

[0043] Next, once the modified region 122, which serves as the starting point for fracture, is formed in the second carrier 120, the dicing tape 130 is expanded radially outward, as shown in FIG. 4B, to singulate the second carrier 120 similarly to the individual wiring layer 110B, and separate it into individual carrier portions 120A (plurality of carrier portions). Stealth dicing can suppress the occurrence of chipping or cracks even when the second carrier 120 is thin, thereby preventing contamination during cutting. Furthermore, because the fine wiring layer 110, which has an unstable shape, is cut in advance, the fine wiring layer 110 (individual wiring layer 110B) is not pulled during this expansion, and the shape of the individual wiring layer 110B can be reliably maintained.

[0044] Thereafter, as shown in FIG. 4C, a thin wiring member 1 is obtained, each having an individual wiring layer 110B and a carrier portion 120A. The individual wiring layer 110B corresponds to the fine wiring layer 10 shown in FIG. 1, and the carrier portion 120A corresponds to the support layer 20 shown in FIG. 1. Note that after the thin wiring member 1 is mounted on a wiring board or the like, the carrier portion 120A may be peeled off from the corresponding individual wiring layer 110B. The method for peeling off this carrier portion 120A may be, for example, peeling by laser irradiation, and is preferably different from the method for peeling off the first carrier 100 from the fine wiring layer 110A. However, the method for peeling off the carrier portion 120A and the method for peeling off the first carrier 100 may be the same.

[0045] As described above, the method for manufacturing a thin wiring member according to this embodiment includes, in addition to the step of cutting the fine wiring layer 110, the steps of forming modified regions 122 serving as fracture initiation points in an internal region of the second carrier 120 corresponding to the cut region 118 obtained by cutting the fine wiring layer 110A using laser light L2, and expanding the second carrier 120 along the surface direction, where the modified regions 122 have been formed, to divide the second carrier 120 into multiple carrier portions 120A. In this method, instead of using a dicing blade to divide the second carrier 120, fracture initiation points are formed using laser light, and the second carrier 120 is fractured from the fracture initiation points during expansion. This is a laser dicing process known as stealth dicing. Using this process can prevent cracks and chipping from occurring in the divided second carrier 120. This makes it possible to manufacture the thin wiring member 1 while suppressing contamination. Furthermore, according to this manufacturing method for a thin wiring member, cracks and chipping do not occur when dividing the second carrier 120, which prevents a decrease in the strength of the carrier. Furthermore, according to this manufacturing method for a thin wiring member, cracks and chipping do not occur when dividing the second carrier 120, which prevents damage to the wiring portion 116 in the thin wiring member 1.

[0046] In the method for manufacturing a thin wiring member according to this embodiment, when cutting the fine wiring layer 110, the fine wiring layer 110 is cut using a laser or a dicing blade. The fine wiring layer 110 to be cut is a thin member, for example, 10 to 50 μm thick, and is formed from an adhesive or elastic material, resulting in an unstable shape. However, when cutting the fine wiring layer 110 using a laser, if the portion to be cut is only resin, the fine wiring layer 110 can be cut very quickly and accurately by using laser ablation technology. On the other hand, if the resin in the cut portion contains a metal layer, the wiring layer can be cut efficiently by using a dicing blade with a wide processing margin, even if the resin contains a metal layer.

[0047] In the method for manufacturing a thin wiring member according to this embodiment, cutting is performed while the fine wiring layer 110 is placed on the first carrier 100. As described above, the fine wiring layer 110 to be cut is a member with an unstable shape. However, by cutting the fine wiring layer 110 while it is supported on the first carrier 100, the fine wiring layer 110 can be cut with high precision.

[0048] In the method for manufacturing a thin wiring member according to this embodiment, the fine wiring layer 110 may be cut using an ablation laser, and the peeled first carrier 100 may be collected for reuse. In this case, the first carrier 100 may be damaged or not damaged much when the fine wiring layer 110 is cut. As a result, this manufacturing method makes it possible to reuse the first carrier 100 used to fabricate the rewiring layer, thereby reducing the burden on the environment.

[0049] In the manufacturing method of a thin wiring member according to this embodiment, the modified region 121 is formed after the first carrier 100 is peeled off. When the fine wiring layer 110 is cut with a laser or a blade, processing marks may remain on the installation surface of the first carrier 100. In this case, if an attempt is made to form a modified region with laser light from the first carrier 100 side, these processing marks may prevent the laser light from forming an appropriate modified region. Therefore, by forming the modified region 122 on the second carrier 120 after peeling off the first carrier 100, it is possible to prevent such manufacturing defects and more reliably form the modified region on the second carrier 120.

[0050] In the method for manufacturing a thin wiring member according to this embodiment, the method for peeling the first carrier 100 from the fine wiring layer 110A may be different from the mechanism by which the second carrier 120 or the carrier portion 120A is peeled. This prevents the second carrier 120, which is necessary for subsequent processes, from being peeled when the first carrier 100 is peeled, and allows the thin wiring member 1 to be more reliably manufactured. Furthermore, the different peeling method makes it possible to easily peel the first carrier 100.

[0051] In the method for manufacturing a thin wiring member according to this embodiment, the second carrier 120 may be a glass carrier having a thickness of 0.3 mm to 1.1 mm. In this case, the manufacturing method can be more flexible when forming the modified region. Furthermore, after using the thin wiring member 1 as a component, laser irradiation or the like can be more easily performed when peeling the carrier portion 120A from the individual wiring layer 110B.

[0052] In the method for manufacturing a thin wiring member according to this embodiment, dicing tape 130 is attached to the surface 120a of second carrier 120 opposite to the surface to which fine wiring layer 110 is attached. When dividing second carrier 120, dicing tape 130 is spread to expand second carrier 120. This allows second carrier 120, on which modified region 122 has been formed, to be easily divided by simple means.

[0053] [Second embodiment] Next, a method for manufacturing a thin wiring member 1 according to a second embodiment will be described with reference to Fig. 5. Fig. 5 is a diagram showing the method for manufacturing a thin wiring member according to the second embodiment in sequence. Below, differences from the manufacturing method according to the first embodiment will be mainly described, and descriptions of the same parts may be omitted.

[0054] In the method for manufacturing a thin wiring member according to the second embodiment, as in the first embodiment, first, a first carrier 100 is prepared as shown in Fig. 2(a) , and then, a fine wiring layer 110 is formed on the first carrier 100 as shown in Fig. 2(b) .

[0055] 5A, after the fine wiring layer 110 is formed, the second carrier 120 is bonded to the upper surface 110b of the fine wiring layer 110. In the manufacturing method according to the second embodiment, unlike the first embodiment, the second carrier 120 is bonded before the fine wiring layer 110 is cut.

[0056] 5B, the first carrier 100 is peeled off from the fine wiring layer 110. The method for peeling off the first carrier 100 is the same as in the first embodiment.

[0057] 5C, the second carrier 120 supporting the fine wiring layer 110 is attached to the dicing tape 130 via an adhesive film. Then, the fine wiring layer 110 supported by the second carrier 120 is cut so that each of the plurality of wiring portions 116 has at least one wiring portion 116. The cutting method may be dicing using a blade D as in the first embodiment, or cutting using a laser beam L1.

[0058] After cutting the fine wiring layer 110 into the individual wiring layers 110B, as in the first embodiment, modified regions 122 are formed by laser light L2 in the internal region of the second carrier 120 in a region corresponding to the cut region 118 where the fine wiring layer 110A was cut (see FIG. 4A). Then, as shown in FIG. 4B, the dicing tape 130 is expanded radially outward to separate the second carrier 120 into individual carrier portions 120A in the same manner as the individual wiring layers 110B. This results in a plurality of thin wiring members 1.

[0059] As described above, the method for manufacturing a thin wiring member according to the second embodiment, similar to the first embodiment, includes, in addition to the step of cutting the fine wiring layer 110, the steps of forming modified regions 122 serving as fracture starting points in an internal region of the second carrier 120 corresponding to the cut region 118 where the fine wiring layer 110A is cut using laser light L2, and expanding the second carrier 120 with the modified regions 122 formed along the surface direction to divide the second carrier 120 into multiple carrier portions 120A. As a result, according to this embodiment, cracks and chipping can be prevented from occurring in the divided second carrier 120, making it possible to manufacture the thin wiring member 1 while suppressing the occurrence of contamination. Furthermore, according to this method for manufacturing a thin wiring member, cracks and chipping do not occur when dividing the second carrier 120, thereby preventing a decrease in the carrier strength. Furthermore, according to this method for manufacturing a thin wiring member, cracks and chipping do not occur when dividing the second carrier 120, thereby preventing damage to the wiring portion 116 of the thin wiring member 1.

[0060] In the manufacturing method of a thin wiring member according to this embodiment, the fine wiring layer 110 is cut after the second carrier 120 is bonded to the fine wiring layer 110. This prevents the first carrier 100 from being peeled off and damaged when cutting the fine wiring layer 110. As a result, this manufacturing method makes it possible to reuse the first carrier 100 used to fabricate the rewiring layer, thereby reducing the burden on the environment.

[0061] [Third Embodiment] Next, a method for manufacturing a thin wiring member 1 according to a third embodiment will be described with reference to Fig. 6. Fig. 6 is a diagram showing the method for manufacturing a thin wiring member according to the third embodiment in sequence. Below, differences from the manufacturing method according to the first embodiment will be mainly described, and descriptions of the same parts may be omitted.

[0062] In the method for manufacturing a thin wiring member according to the third embodiment, as in the first embodiment, first, a first carrier 100 is prepared as shown in Fig. 2(a). Then, as shown in Fig. 2(b), a fine wiring layer 110 is formed on the first carrier 100. As shown in Fig. 2(c), the fine wiring layer 110 supported by the first carrier 100 is cut with a dicing blade D to form a fine wiring layer 110A having a plurality of individual wiring layers 110B. The cutting may be performed with a laser beam L1 as in the first embodiment.

[0063] Subsequently, as shown in FIG. 6A, a second carrier 120 is attached to the upper surface 110b of the cut fine wiring layer 110A.

[0064] 6B, a modified region 122 is formed by laser light L2 in an internal region of the second carrier 120 attached to the fine wiring layer 110A, in a region corresponding to the cut region 118 obtained by cutting the fine wiring layer 110A. At this time, the laser light L2 for forming the modified region 122 is irradiated from the upper surface of the second carrier 120 toward the fine wiring layer 110A.

[0065] Next, as shown in FIG. 6C, the first carrier 100 is peeled off from the cut micro-wiring layer 110A. This peeling may be performed by irradiating with laser light L2, or the like. If the second carrier 120 is bent when peeling off the first carrier 100, cracks may occur starting from the modified region 122 because the modified region 122 has already been formed in the second carrier 120. Therefore, in this manufacturing method, when peeling off the first carrier 100 at this stage to prevent cracks from occurring in the second carrier 120, it is preferable to bend and peel off the first carrier 100 without bending the second carrier 120. Thereafter, as shown in FIG. 6D, the second carrier 120 supporting the micro-wiring layer 110A is attached to a dicing tape 130 via an adhesive film. 4B, the dicing tape 130 is expanded radially outward to separate the second carrier 120 into individual carrier portions 120A in the same manner as the individual wiring layers 110B, thereby obtaining a plurality of thin wiring members 1.

[0066] As described above, the method for manufacturing a thin wiring member according to the third embodiment, similar to the first and second embodiments, includes, in addition to the step of cutting the fine wiring layer 110, the steps of forming modified regions 122 serving as fracture starting points in an internal region of the second carrier 120 corresponding to the cut region 118 where the fine wiring layer 110A is cut using laser light L2, and expanding the second carrier 120 with the modified regions 122 formed along the surface direction to divide the second carrier 120 into multiple carrier portions 120A. As a result, according to this embodiment, cracks and chipping can be prevented from occurring in the divided second carrier 120, making it possible to manufacture the thin wiring member 1 while suppressing the occurrence of contamination. Furthermore, according to this method for manufacturing a thin wiring member, cracks and chipping do not occur when dividing the second carrier 120, thereby preventing a decrease in the carrier strength. Furthermore, according to this method for manufacturing a thin wiring member, cracks and chipping do not occur when dividing the second carrier 120, thereby preventing damage to the wiring portion 116 of the thin wiring member 1.

[0067] In the method for manufacturing a thin wiring member according to this embodiment, the modified region 122 is formed before the first carrier 100 is peeled off.

[0068] [Method for Manufacturing Wiring Board] Next, with reference to FIG. 7 , an example of a method for manufacturing a wiring board using the above-described thin wiring member 1 will be described. FIG. 7 is a diagram sequentially showing an example of a method for manufacturing a wiring board using the thin wiring member. In this method for manufacturing a wiring board, first, the thin wiring member 1 is prepared, and a substrate body 301 is also prepared. As shown in FIG. 7A, the substrate body 301 is a member in which insulating layers 302 and wiring layers 303 are alternately stacked. In addition, the substrate body 301 is provided with an installation layer 304 for arranging the thin wiring member 1.

[0069] Next, when preparation of the thin wiring member 1 and the like is completed, the thin wiring member 1 is placed on the mounting layer 304 of the substrate main body 301, as shown in (b) of Fig. 7. At this time, the thin wiring member 1 is attached to the mounting layer 304 via an adhesive layer 30 or the like. The thin wiring member 1 may also be placed inside the substrate main body 301.

[0070] 7C, an insulating resin portion 305 is formed on the mounting layer 304 of the substrate main body 301 on which the thin wiring member 1 is mounted. The insulating resin portion 305 is then patterned to form wiring 306. Thereafter, a connection terminal is further provided and connected to the wiring of the thin wiring member 1. In this manner, the wiring substrate 300 can be obtained.

[0071] The above describes a method for manufacturing a thin wiring member, a method for manufacturing a thin wiring member, and a method for manufacturing a wiring board according to one embodiment of the present disclosure. However, the present disclosure is not limited to the above-described embodiment, and appropriate modifications can be made within the scope of the spirit thereof.

[0072] 1...thin wiring member, 10...fine wiring layer, 20...support layer, 100...first carrier, 110...fine wiring layer (wiring layer), 110A...fine wiring layer, 110B...individual wiring layer, 110a...lower surface (first surface), 110b...upper surface (second surface), 112...insulating portion, 114...wiring, 116...wiring portion, 118...cutting area, 120...second carrier, 120A...carrier portion, 120a...surface, 122...modified area, 130...dicing tape, D...blade, L1, L2...laser light.

Claims

1. 1. A method for manufacturing a plurality of thin wiring components, comprising: forming a wiring layer on a first carrier, the wiring layer having a plurality of wiring portions corresponding to the plurality of thin wiring members and an insulating portion existing around the plurality of wiring portions; cutting the wiring layer so that each of the wiring layers has at least one of the plurality of wiring portions; a step of bonding a second carrier to a second surface of the wiring layer opposite to a first surface on which the first carrier is provided; peeling the first carrier from the wiring layer; forming a modified region serving as a starting point of breakage in an internal region of the second carrier corresponding to a portion where the wiring layer is cut by using a laser beam; expanding the second carrier in which the modified region is formed along a surface direction to divide the second carrier into a plurality of carrier portions; A method for manufacturing a thin wiring member comprising the steps of:

2. In the cutting step, the wiring layer is cut by a laser or a dicing blade. The method for producing the thin wiring member according to claim 1 .

3. the cutting step is performed in a state where the wiring layer is supported by the first carrier. The method for producing the thin wiring member according to claim 1 or 2.

4. In the cutting step, the wiring layer is cut by an ablation laser; In the peeling step, the peeled first carrier is recovered for reuse. The method for producing the thin wiring member according to claim 3 .

5. The cutting step is performed after the second carrier is bonded to the wiring layer. The method for producing the thin wiring member according to claim 1 or 2.

6. The step of forming the modified region is performed after the step of peeling off the first carrier. The method for producing the thin wiring member according to claim 1 or 2.

7. The step of forming the modified region is performed before the step of peeling off the first carrier. The method for producing the thin wiring member according to claim 1 or 2.

8. a method for peeling the first carrier from the wiring layer is different from a mechanism for peeling the second carrier or the carrier portion; The method for producing the thin wiring member according to claim 1 or 2.

9. The second carrier is a glass carrier having a thickness of 0.3 mm or more and 1.1 mm or less. The method for producing the thin wiring member according to claim 1 or 2.

10. The second carrier is a silicon substrate. The method for producing the thin wiring member according to claim 1 or 2.

11. The method further includes a step of attaching a dicing tape to a surface of the second carrier opposite to a surface to which the wiring layer is attached, In the dividing step, the second carrier is expanded by spreading the dicing tape. The method for producing the thin wiring member according to claim 1 or 2.

12. A wiring layer having a resin composition or a cured product thereof present around the wiring and the wiring; a support layer provided on one surface of the wiring layer; The thin wiring member, wherein the support layer is a glass carrier.

13. The thickness of the wiring layer is 200 μm or less, The thickness of the support layer is 0.3 mm or more and 1.1 mm or less, The wiring layer has wiring with a line width of 5 μm. The thin wiring member according to claim 12.

14. A step of preparing a thin wiring member manufactured by the method for manufacturing a thin wiring member according to claim 1 or 2; disposing the thin wiring member on or within a substrate; connecting the wiring of the thin wiring member to a connection terminal; A method for manufacturing a wiring board comprising the steps of: