Semiconductor package and module

Abstract

This semiconductor package may comprise: a first lead frame; an element which outputs a signal that corresponds to the current flowing through the first lead frame; a second lead frame which is electrically insulated from the first lead frame, and outputs a signal that corresponds to the signal from the element; and a sealing part which seals the element, a part of the first lead frame and a part of the second lead frame with a resin. A terminal portion of the first lead frame may be exposed from a first surface of the sealing part. A terminal portion of the second lead frame may be exposed from a second surface of the sealing part, the second surface being opposite to the first surface in a first direction. The sealing part may have at least one groove, which extends in a second direction that intersects with the first direction, in at least one surface other than the first surface and the second surface.

Description

Semiconductor packages and modules

[0001] The present invention relates to semiconductor packages.

[0002] Patent Document 1 discloses a current sensor that has a lead terminal, a conductor through which a current to be measured flows, a magnetoelectric conversion element that outputs a signal whose magnitude is proportional to the magnetic field generated by the current flowing through the conductor, a signal processing IC that processes the signal, and another lead terminal that outputs a signal from the signal processing IC, and is a semiconductor package in which the conductor, magnetoelectric conversion element, and signal processing IC are sealed with mold resin. [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Patent No. 6321800 Problem to be solved

[0003] In the semiconductor package described above, it is desirable to ensure insulation between lead terminals while suppressing an increase in package size even when used at a high operating voltage. General disclosure

[0004] A semiconductor package according to one aspect of the present invention may include a first lead frame, an element that outputs a signal corresponding to a current flowing through the first lead frame, a second lead frame that is electrically insulated from the first lead frame and outputs a signal corresponding to the signal from the element, and a sealing portion that seals the element, a portion of the first lead frame, and a portion of the second lead frame with resin. A terminal portion of the first lead frame may be exposed from a first surface of the sealing portion. A terminal portion of the second lead frame may be exposed from a second surface that faces the first surface of the sealing portion in a first direction. The sealing portion may have at least one groove extending in a second direction intersecting the first direction, on at least one surface other than the first surface and the second surface.

[0005] In the semiconductor package, the sealing portion may include a third surface and a fourth surface facing each other in a thickness direction, and a fifth surface and a sixth surface facing each other in the second direction intersecting with each of the first direction and the thickness direction. The at least one groove may include a first groove in each of the third surface and the fourth surface, the first groove extending from the fifth surface toward the sixth surface.

[0006] In any one of the semiconductor packages, the first groove may extend along the second direction.

[0007] In any one of the semiconductor packages, the at least one groove may include a second groove extending from the third surface toward the fourth surface in each of the fifth surface and the sixth surface.

[0008] In any one of the semiconductor packages, the second groove may extend along the thickness direction.

[0009] In any of the semiconductor packages, the first groove may communicate with the second groove.

[0010] In any of the semiconductor packages, the sealing portion may include a third surface and a fourth surface facing each other in a thickness direction, and a fifth surface and a sixth surface facing each other in the second direction intersecting with each of the first direction and the thickness direction. The at least one groove may include a groove that is continuous around the third surface, the fourth surface, the fifth surface, and the sixth surface.

[0011] In any one of the semiconductor packages, the recess width of the at least one groove may be 1 mm or more.

[0012] In any of the semiconductor packages, the depth of the at least one groove may be 0.5 mm or greater.

[0013] In any of the semiconductor packages, the sealing portion may include a plurality of grooves as the at least one groove, and the spacing between at least one of the plurality of grooves may be wider than the spacing between other grooves among the plurality of grooves other than the at least one groove.

[0014] In any of the semiconductor packages, the sealing portion may include a plurality of grooves as the at least one groove, and the spacing between grooves in a central portion of the plurality of grooves in the first direction may be wider than the spacing between grooves other than the grooves in the central portion.

[0015] In any of the semiconductor packages, the terminal portion of the first lead frame may be electrically connected to a first power supply system, and the terminal portion of the second lead frame may be connected to a second power supply system that applies a lower voltage than the first power supply system.

[0016] In any of the semiconductor packages, the installation surfaces of the terminal portion of the first lead frame and the terminal portion of the second lead frame may be located outside the thickness direction relative to the third surface or the fourth surface when viewed from the second direction.

[0017] In any one of the semiconductor packages, the side surfaces of the at least one groove may be inclined so as to widen from the bottom surface toward the opening when viewed from the second direction.

[0018] In any of the semiconductor packages, the inclination angle of the side surface of the at least one groove may be 85 degrees or less with respect to the bottom surface.

[0019] In any of the semiconductor packages, the side surface of the protruding portion of the at least one groove may be chamfered or rounded to 0.1 mm or more.

[0020] In any one of the semiconductor packages, the sealing portion may seal the element, a portion of the first lead frame, and a portion of the second lead frame with a molding resin.

[0021] In any of the semiconductor packages, the element may be at least one magnetoelectric conversion element that outputs a signal according to the magnitude of a magnetic field generated by a current flowing through the first lead frame.

[0022] Any of the semiconductor packages may further include a signal processing IC that processes the signal output from the at least one magnetoelectric conversion element and outputs the processed signal via the second lead frame. The sealing portion may further seal the signal processing IC.

[0023] In any of the semiconductor packages, the at least one magnetoelectric transducer and the signal processing IC may be electrically connected via a first wire, the signal processing IC and the second lead frame may be electrically connected via a second wire, and the at least one groove may be provided at a position that does not overlap with the first wire and the second wire in a plan view.

[0024] In any of the semiconductor packages, the terminal portion of the first lead frame may extend linearly from the first surface in the first direction, and the terminal portion of the second lead frame may extend linearly from the second surface in the first direction.

[0025] In any of the semiconductor packages, the terminal portion of the first lead frame may have a through hole for screwing the semiconductor package to a substrate on which the semiconductor package is mounted using a bolt.

[0026] A module according to an aspect of the present invention may include any one of the semiconductor packages and a substrate on which the semiconductor package is mounted, wherein the substrate may include a slit having a portion that is at least along the second direction, at a position that overlaps the sealing portion when viewed from a thickness direction of the sealing portion.

[0027] In the module, the slit may have a continuous portion that intersects with a fifth surface and a sixth surface that face each other in the second direction of the sealing portion when viewed in a thickness direction of the sealing portion.

[0028] In any of the modules, the substrate may have a first land electrically connected to the first lead frame, the substrate may have a second land electrically connected to the second lead frame, and the slit may be disposed between the first land and the second land.

[0029] In any of the modules, the width of the slit in the second direction may be longer than the sum of the widths of the first land and the second land in the second direction.

[0030] In any of the modules, the slit may have a width of 1 mm or greater.

[0031] In any of the modules, the sealing portion may include a third surface and a fourth surface opposing each other in the thickness direction, and a fifth surface and a sixth surface opposing each other in the second direction intersecting each of the first direction and the thickness direction. The at least one groove may include a first groove extending from the fifth surface toward the sixth surface in each of the third surface and the fourth surface. The fourth surface may face the substrate. The fourth surface of the sealing portion may be located at a higher position with respect to the substrate than installation surfaces of the terminal portion of the first lead frame and the terminal portion of the second lead frame.

[0032] In any of the semiconductor packages, the terminal portion of the first lead frame may have a first portion bent from the first surface toward the substrate in the thickness direction, and a second portion narrower than the first portion and extending from the first portion further in the thickness direction to pass through a hole in the substrate. The terminal portion of the second lead frame may have a third portion bent from the second surface toward the substrate in the thickness direction, and a fourth portion narrower than the third portion and extending from the third portion further in the thickness direction to pass through a hole in the substrate. The diameter of the hole through which the second portion of the substrate passes may be narrower than the width of the first portion, and the diameter of the hole through which the fourth portion of the substrate passes may be narrower than the width of the third portion.

[0033] In any of the semiconductor packages, the width of the slit in the first direction and the second direction may be longer than the width of the sealing portion in the first direction and the second direction, and a portion of the sealing portion may be positioned within the slit.

[0034] In any of the semiconductor packages, the terminal portion of the first lead frame may extend linearly from the first surface in the first direction, and the terminal portion of the second lead frame may extend linearly from the second surface in the first direction.

[0035] In any of the semiconductor packages, the terminal portion of the first lead frame may have a first portion bent from the first surface in the thickness direction away from the bottom surface of the sealing portion or in a diagonal direction between the thickness direction and the first direction, when viewed from the second direction, and a second portion bent from the first portion in the first direction, and the second portion may have an installation surface for connection to the substrate. The terminal portion of the second lead frame may have a third portion bent from the second surface in the thickness direction away from the bottom surface of the sealing portion or in a diagonal direction between the thickness direction and the first direction, when viewed from the second direction, and a fourth portion bent from the third portion in the first direction, and the fourth portion may have an installation surface for connection to the substrate.

[0036] In any of the semiconductor packages, the terminal portion of the first lead frame may have through holes for screwing the semiconductor package to a substrate on which the semiconductor package is mounted with bolts. The terminal portion of the first lead frame may be disposed on a mounting surface of the substrate, and a land may be provided on a surface of the substrate opposite the mounting surface for electrically connecting the first lead frame to a power supply system that applies a voltage to the first lead frame, and the terminal portion of the first lead frame and the land may be electrically connected via the bolts.

[0037] The above summary of the invention does not list all of the features of the present invention, and subcombinations of these features may also be inventions.

[0038] 4A is a schematic plan view of a current sensor according to a first embodiment, as viewed from the ceiling surface side (Z-axis direction). FIG. 1B is a schematic plan view of the current sensor shown in FIG. 1A, as viewed from the side surface side (X-axis direction). FIG. 1C is a diagram for explaining a spatial distance. FIG. 1D is a diagram for explaining a creepage distance. FIG. 1E is a diagram for explaining a comparative example. FIG. 1F is a schematic plan view of the current sensor according to the first embodiment, as viewed from the ceiling surface side (Z-axis direction) of the current sensor, showing a state in which the current sensor is mounted on a substrate. FIG. 4A is a schematic plan view of the current sensor shown in FIG. 4A, as viewed from the side surface side (X-axis direction) of the current sensor, showing a state in which the current sensor is mounted on a substrate. FIG. 5B is a schematic plan view of the current sensor according to a second embodiment, as viewed from the ceiling surface side (Z-axis direction). FIG. 5A is a schematic plan view of the current sensor shown in FIG. 5A, as viewed from the side surface side (X-axis direction). FIG. 6A is a schematic plan view of the current sensor 10 shown in FIG. 5A, as viewed from the side surface side (Y-axis direction). FIG. 6B is a schematic plan view of the current sensor according to a third embodiment, as viewed from the ceiling surface side (Z-axis direction). FIG. 6C is a schematic plan view of the current sensor shown in FIG. 6A, as viewed from the side surface side (X-axis direction). 8A is a schematic plan view of the current sensor according to the third embodiment, when it is mounted on a substrate, as viewed from the ceiling surface side (Z-axis direction) of the current sensor. FIG. 7A is a schematic plan view of the current sensor shown in FIG. 7A, when it is mounted on a substrate, as viewed from the side surface side (X-axis direction) of the current sensor. FIG. 8B is a schematic plan view of the current sensor shown in FIG. 8A, when it is mounted on a substrate, as viewed from the side surface side (X-axis direction) of the current sensor. FIG. 8C is a schematic plan view of the current sensor shown in FIG. 8A, when it is mounted on a substrate, as viewed from the side surface side (X-axis direction) of the current sensor. FIG. 10A is a schematic plan view of the current sensor shown in FIG. 10A, when it is mounted on a substrate, as viewed from the side surface side (X-axis direction). FIG. 10D is a schematic plan view of the current sensor according to another embodiment, as viewed from the ceiling surface side (Z-axis direction). FIG. 10E is a schematic cross-sectional view of the current sensor according to another embodiment, as viewed from the side surface side (X-axis direction).

[0039] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention as claimed. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0040] 1A and 1B are schematic diagrams of a semiconductor package that functions as a current sensor 10 according to a first embodiment. FIG. 1A is a schematic plan view of the current sensor 10 according to the first embodiment as viewed from the ceiling side (Z-axis direction). FIG. 1B is a schematic plan view of the current sensor 10 shown in FIG. 1A as viewed from the side (X-axis direction). In FIG. 1A , the coordinate system is defined as the X-axis direction, which is parallel to the paper surface and extends from bottom to top; the Y-axis direction, which is parallel to the paper surface and extends from left to right; and the Z-axis direction, which is perpendicular to the paper surface and extends from back to front. Any one of the X-axis, Y-axis, and Z-axis is orthogonal to the other axes. The Y-axis direction is an example of a first direction. The X-axis direction is an example of a second direction. The Z-axis direction is an example of a thickness direction.

[0041] In one example, the first direction is a direction from a surface 130a of the side surface of the sealing portion 130, on which the pair of lead terminals 140a are exposed, toward a surface 130b, which faces the surface 130a and faces the plurality of lead terminals 150a, on which the plurality of lead terminals 150a are exposed. The second direction is a direction from a surface 130f of the side surface of the sealing portion 130, on which the pair of lead terminals 140a and the plurality of lead terminals 150a are not exposed, toward a surface 130e facing the surface 130f. The thickness direction is a direction from a surface 130d on the bottom side of the sealing portion 130 toward a surface 130c on the ceiling side of the sealing portion 130.

[0042] In one example, the first direction is a direction along the substrate when the current sensor 10 is mounted on the substrate, and is a direction from the surface 130a, on which the pair of lead terminals 140a are exposed, to the surface 130b, which faces the surface 130a and on which the plurality of lead terminals 150a are exposed. The second direction is a direction along the substrate when the current sensor 10 is mounted on the substrate, and is a direction intersecting the first direction. The thickness direction is a direction penetrating the substrate when the current sensor 10 is mounted on the substrate, or more specifically, a direction perpendicular to the substrate.

[0043] The current sensor 10 includes a signal processing IC 100, a magnetoelectric conversion element 20, a magnetoelectric conversion element 22, a sealing portion 130, a lead frame 140, and a lead frame 150. The magnetoelectric conversion element 20 and the magnetoelectric conversion element 22 are electrically connected to the signal processing IC 100 via a wire 30. The signal processing IC 100 is electrically connected to the lead frame 150 via a wire 108. The wire 30 is an example of a first wire, and the wire 108 is an example of a second wire.

[0044] The lead frame 140 includes a pair of lead terminals 140a exposed from the surface 130a of the sealing portion 130, and a conductor 140b sealed in the sealing portion 130 and arranged to surround at least a portion of the magneto-electric transducer 20 and the magneto-electric transducer 22. The lead frame 150 includes a plurality of lead terminals 150a exposed from a surface 130b opposite the surface 130a of the sealing portion 130 in the Y-axis direction, and a conductor 150b electrically connected to the signal processing IC 100 via the wire 108. The shapes of the lead frame 140 and the lead frame 150 shown in FIG. 1A are merely examples, and the shapes of the lead frame 140 and the lead frame 150 may be any shape.

[0045] Lead frame 140 is a primary side lead frame, and lead frame 150 is a secondary side lead frame. Lead frame 140 is physically separated from and electrically insulated from lead frame 150. Lead frame 140 is an example of a first lead frame, and lead frame 150 is an example of a second lead frame. Lead terminal 140a is electrically connected to a high-voltage power supply system. Lead terminal 150a is electrically connected to a low-voltage power supply system that applies a voltage lower than that of the high-voltage power supply system. The high-voltage power supply system is an example of a first power supply system. The low-voltage power supply system is an example of a second power supply system.

[0046] The sealing section 130 seals the magnetoelectric transducer 20, the magnetoelectric transducer 22, the conductor 140b, the conductor 150b, the signal processing IC 100, the wire 30, and the wire 108 with a mold resin. The sealing section 130 may be formed by compression molding or transfer molding using a mold. The mold resin may be, for example, an epoxy-based thermosetting resin with silica added. The mold resin may be a thermoplastic resin such as a liquid crystal polymer.

[0047] The magnetoelectric conversion elements 20 and 22 detect a magnetic field in a specific direction that changes in response to the measurement current flowing through the conductor 140b, and the signal processing IC 100 amplifies a signal corresponding to the magnitude of the magnetic field and outputs the amplified signal via the lead frame 150. The magnetoelectric conversion elements 20 and 22 are an example of an element that outputs a signal corresponding to the current flowing through the lead frame 140. In addition to the current sensor 10, the semiconductor package may also be, for example, a photocoupler. If the semiconductor package is a photocoupler, the element may be an LED element that outputs light as a signal in response to the current flowing through the lead frame 140. In this case, the semiconductor package may further incorporate a light-receiving element that receives the light output by the LED element within the sealing portion 130. The magnetoelectric conversion elements 20 and 22 are made of compound semiconductor formed on a GaAs substrate and are chips cut into a square or rectangular shape when viewed in a plan view from the Z-axis direction.

[0048] When detecting a magnetic field in the Z-axis direction, the magnetoelectric conversion elements 20 and 22 may be Hall elements. When detecting a magnetic field in any one axis direction on the XY plane, the magnetoelectric conversion elements 20 and 22 may be magnetoresistive elements or fluxgate elements.

[0049] The signal processing IC 100 is a large-scale integrated circuit (LSI). The signal processing IC 100 is a signal processing circuit and a bias circuit made of a Si monolithic semiconductor formed on a Si substrate. The bias circuit applies a corrected drive current or drive voltage to the magnetoelectric conversion elements 20 and 22. The signal processing circuit processes an output signal corresponding to the magnitude of the magnetic field output from the magnetoelectric conversion elements 20 and 22. The signal processing circuit corrects the measurement current flowing through the lead frame 140 based on the output signal and outputs an output signal indicating an accurate current value via the lead terminal 150a. The signal processing circuit reduces noise components contained in the output signals of the magnetoelectric conversion elements 20 and 22 based on the difference between the output signals of the magnetoelectric conversion elements 20 and 22, amplifies the output signals of the magnetoelectric conversion elements 20 and 22 with the noise components reduced, calculates the current value of the measurement current based on the amplified output signal, and outputs an output signal indicating the current value.

[0050] In the first embodiment, an example in which the current sensor 10 includes two magnetoelectric transducers is described. However, the current sensor 10 may include at least one magnetoelectric transducer. In the current sensor 10 configured in this manner, it is necessary to ensure insulation between the primary lead terminal 140a and the secondary lead terminal 150a. To maintain high insulation performance, the entire sensor must be covered with an insulator such as molded resin to ensure both clearance and creepage distances. As shown in FIG. 2A, clearance k1 indicates the shortest distance through space between two conductive portions (terminal portions). As shown in FIG. 2B, creepage distances k2 and k3 indicate the shortest distances along the surface of the insulator between the two conductive portions.

[0051] However, when the voltage of the current source flowing through the primary lead terminal 140a increases, it is necessary to increase the clearance distance and creepage distance. In order to ensure the clearance distance and creepage distance, it is conceivable to increase the distance between the surfaces 130a and 130b of the sealing portion 130, as shown in Fig. 3, for example. However, if the structure shown in Fig. 3 is used, the size of the current sensor 10 increases, and it may be difficult to ensure installation space.

[0052] Therefore, in the first embodiment, a semiconductor package such as a current sensor 10 is provided that can more reliably ensure insulation while preventing the size of the sealing portion 130 from increasing relative to the required creepage distance.

[0053] The sealing unit 130 is a structure having six faces, such as a rectangular parallelepiped or a cube. In addition to faces 130a and 130b that face each other in the Y-axis direction, the sealing unit 130 also has faces 130c and 130d that face each other in the thickness direction (Z-axis direction), and faces 130e and 130f that face each other in the X-axis direction.

[0054] The sealing portion 130 may have at least one groove extending in the X direction or the Z direction on at least one of the surfaces 130c to 130f to ensure the clearance distance and creepage distance between the primary side lead terminal 140a and the secondary side lead terminal 150a.

[0055] The sealing unit 130 includes grooves 132 extending from surface 130e toward surface 130f on each of surfaces 130c and 130d. Surface 130c is the ceiling surface of the sealing unit 130, and surface 130d is the bottom surface of the sealing unit 130. The ceiling surface of the sealing unit 130 may be the surface on the same side as the sensing surfaces of the magneto-electric conversion elements 20 and 22, and the bottom surface of the sealing unit 130 may be the surface opposite to the sensing surfaces of the magneto-electric conversion elements 20 and 22. The sealing unit 130 may include multiple grooves 132. The grooves 132 may be provided on each of surfaces 130c and 130d along the X direction. The grooves 132 may or may not be parallel to the X direction. The grooves 132 are an example of a first groove.

[0056] The sealing portion 130 includes a groove 134 extending from the surface 130c toward the surface 130d on each of the surfaces 130e and 130f. The sealing portion 130 may include a plurality of grooves 134. Each of the plurality of grooves 132 is in communication with each of the plurality of grooves 134. The grooves 134 may be provided on each of the surfaces 130e and 130f along the Z direction. The grooves 134 may or may not be parallel to the Z direction. The grooves 134 are an example of a second groove.

[0057] By providing the grooves 132 and 134 on the surface of the sealing portion 130, the creepage distance between the primary-side lead terminal 140a and the secondary-side lead terminal 150a can be increased compared to when the grooves 132 and 134 are not provided. Therefore, even if the width in the Y direction and the height in the Z direction of the sealing portion 130 are relatively short, the creepage distance required to ensure insulation between the primary-side lead terminal 140a and the secondary-side lead terminal 150a can be ensured. To ensure insulation, the recess width of the grooves 132 and 134 may be 1 mm or more. This configuration makes it possible to provide a current sensor 10 that can more reliably ensure insulation while suppressing an increase in the size of the sealing portion 130.

[0058] The depth of the grooves 132 and 134 may be 0.5 mm or more. Furthermore, the spacing W2 between any one of the multiple grooves 132 and 134 in the Y-axis direction may be wider than the spacing W3 between the other grooves. This allows for a marking space for indicative characters or the like to be secured on the surface of the sealing portion 130. Furthermore, when mounting the current sensor 10 on the substrate 200, the current sensor 10 can be easily picked up by suction. Furthermore, by increasing the width of the central portion of the sealing portion 130, the center of gravity can be positioned at the center of the sealing portion 130, allowing the current sensor 10 to be stably mounted on the substrate 200. The magnetoelectric conversion elements 20 and 22 may be positioned between the grooves 132 without overlapping with the grooves 132 in a plan view from the ceiling surface side. Alternatively, the magnetoelectric conversion elements 20 and 22 may be positioned so as to fit within the grooves 132 in a plan view from the ceiling surface side. That is, the thickness of the sealing portion 130 in the portion facing the sensing surfaces of the magnetoelectric conversion elements 20 and 22 may be the same.

[0059] Here, the current sensor 10 is mounted on a substrate. To ensure insulation, the surface 130d of the sealing portion 130 facing the substrate needs to be spaced apart from the substrate. Therefore, the mounting surfaces of the lead terminals 140a and 150a may be located outside the surface 130d in the thickness direction (Z-axis direction) when viewed from the X-axis direction. In other words, the bottom surface of the surface 130d of the sealing portion 130 is located higher than the mounting surfaces of the lead terminals 140a and 150a relative to the substrate. It is preferable that the distance h1 between the bottom surface of the surface 130d of the sealing portion 130 and the substrate is 1 mm or more.

[0060] The surface 132a of the groove 132 may be inclined so as to widen from the bottom surface toward the opening when viewed in the X-axis direction. Similarly, the side surface 134a of the groove 134 may be inclined so as to widen from the bottom surface toward the opening when viewed in the Z-axis direction. The inclination angle θ of the surfaces 132a and 134a of the grooves 132 and 134 with respect to the bottom surface may be 85 degrees or less.

[0061] Fig. 4A is a schematic plan view of the current sensor 10 according to the first embodiment mounted on the substrate 200, as viewed from the ceiling surface side (Z-axis direction) of the current sensor 10. Fig. 4B is a schematic plan view of the current sensor 10 shown in Fig. 4A mounted on the substrate 200, as viewed from the side side (X-axis direction) of the current sensor 10.

[0062] The substrate 200 has a primary-side land 202 on which the primary-side lead terminal 140a is mounted and electrically connected, and a secondary-side land 204 on which the secondary-side lead terminal 150a is mounted and electrically connected. The lands 202 and 204 are made of a conductive material such as metal.

[0063] Furthermore, the substrate 200 has a slit 210 at a position overlapping the sealing portion 130 when viewed from the Z-axis direction. The substrate 200 may have a slit 210 between the lands 202 and 204 at a position facing the surface 130d of the sealing portion 130, the slit 210 having at least a portion along the X-axis direction. The slit 210 may have a main portion 210a extending in the X-axis direction and extension portions 210b extending from both ends of the main portion 210a in the Y-axis direction toward the land 202, and the slit 210 may be U-shaped. The length of the main portion 210a in the X-axis direction is longer than the total width of the land 202 in the X-axis direction. Furthermore, the width of the main portion 210a in the Y-axis direction and the width of the extension portions 210b in the X-axis direction are 1 mm or more.

[0064] This ensures better insulation when the current sensor 10 is mounted on the substrate 200 .

[0065] From the viewpoint of ensuring insulation when the current sensor 10 is mounted on the substrate 200, it is preferable that the slit 210 has a continuous portion that intersects with the surfaces 130e and 130f when viewed from the ceiling surface side (Z-axis direction) of the sealing portion 130. In such a case, the length of the slit 210 in the X-axis direction is longer than the width of the sealing portion 130 in the X-axis direction. It is also preferable that the length of the slit 210 in the X-axis direction is longer than the total width of the lands 202 in the X-axis direction.

[0066] Fig. 5A is a schematic plan view of the current sensor 10 according to the second embodiment as viewed from the ceiling surface side (Z-axis direction), Fig. 5B is a schematic plan view of the current sensor 10 shown in Fig. 5A as viewed from the side surface side (X-axis direction), and Fig. 5C is a schematic plan view of the current sensor 10 shown in Fig. 5A as viewed from the side surface side (Y-axis direction).

[0067] In the current sensor 10 according to the second embodiment, the lead terminal 140a has a wide portion 141a that bends from the surface 130a of the sealing portion 130 in the Z-axis direction toward the substrate, and a narrow portion 142a that is narrower in the X-axis direction than the wide portion 141a and extends from the wide portion 141a in the Z-axis direction to penetrate the hole 131 in the substrate 200. The terminal portion 150a has a wide portion 151a that bends from the surface 130b in the Z-axis direction toward the substrate 200, and a narrow portion 152a that is narrower than the wide portion and extends from the wide portion 151a in the Z-axis direction to penetrate the hole in the substrate 200. The diameter of the hole in the substrate 200 for the lead terminal 140a is narrower than the width of the wide portion 141a, and the diameter of the hole in the substrate 200 for the lead terminal 150a is narrower than the width of the wide portion 151a.

[0068] That is, the current sensor 10 according to the second embodiment differs from the current sensor 10 according to the first embodiment in that the lead terminals 140a and 150a are dual in-line package (DIP) type semiconductor packages, in that the lead terminals 140a and 150a are small outline package (SOP) type semiconductor packages.

[0069] The wide portions 141a and 151a extend outward in the Z-axis direction from the surface 130d of the sealing portion 130, reaching the substrate 200. This leaves a gap of distance h1 between the surface 130d of the sealing portion 130 and the mounting surface of the substrate 200 on the current sensor 10 side. This makes it possible to further ensure insulation when the current sensor 10 is mounted on the substrate 200.

[0070] Fig. 6A is a schematic plan view of the current sensor 10 according to the third embodiment as viewed from the ceiling surface side (Z-axis direction). Fig. 6B is a schematic plan view of the current sensor 10 shown in Fig. 6A as viewed from the side surface side (X-axis direction). Fig. 7A is a schematic plan view of the current sensor 10 according to the third embodiment as mounted on a substrate 200 as viewed from the ceiling surface side (Z-axis direction) of the current sensor 10. Fig. 7B is a schematic plan view of the current sensor 10 shown in Fig. 7A as mounted on a substrate 200 as viewed from the side surface side (X-axis direction) of the current sensor 10.

[0071] The current sensor 10 according to the third embodiment differs from the current sensors 10 according to the first and second embodiments in that the lead terminals 140a of the lead frame 140 extend linearly in the Y-axis direction from the surface 130a, and the lead terminals 150a of the lead frame 150 extend linearly in the Y-axis direction from the surface 130b. Furthermore, in the substrate 200 on which the current sensor 10 according to the third embodiment is mounted, the widths of the slits 210 in the X-axis direction and the Y-axis direction are longer than the widths of the sealing portion 130 in the X-axis direction and the Y-axis direction. A portion of the sealing portion 130 is disposed within the slits 210. This ensures better insulation when the current sensor 10 is mounted on the substrate 200. Furthermore, the thickness of the current sensor 10 in the Z-axis direction can be reduced when the current sensor 10 is mounted on the substrate 200.

[0072] Furthermore, since the lead terminals 140a and 150a are not formed but extend linearly, the lead length to the soldering position where they are electrically connected to the substrate 200 can be shortened, and heat generation in the lead terminals 140a and 150a can be suppressed.

[0073] Even if the lead terminals 140a are made thick enough to withstand a large current, no forming is required, which makes it easy to process the lead frame.

[0074] Furthermore, the contact area between the lead terminal 140 a and the land 202 of the substrate 200 can be increased, and the contact resistance between the lead terminal 140 a and the land 202 of the substrate 200 can be reduced.

[0075] Fig. 8A is a schematic plan view of the current sensor 10 according to the fourth embodiment as seen from the ceiling surface side (Z-axis direction). Fig. 8B is a schematic plan view of the current sensor 10 shown in Fig. 8A as seen from the side surface side (X-axis direction). Fig. 9 is a schematic plan view of the current sensor 10 according to the fourth embodiment as seen from the side surface side (X-axis direction) of the current sensor 10 mounted on a substrate 200.

[0076] In the current sensor 10 according to the fourth embodiment, the lead terminal 140a has, as viewed from the X-axis direction, a portion 143a that bends from the surface 130a of the sealing portion 130 in a diagonal direction between the Z-axis direction and the Y-axis direction so as to move away from the surface 130d, and a portion 144a that bends further from the portion 143a in the Y-axis direction. The portion 144a has an installation surface for the substrate 200. The portion 143a extends from the surface 130a in the Y-axis direction and may be bent further away from the surface 130d perpendicular to the Z-axis direction so as not to contact the surface 130a.

[0077] When viewed from the X-axis direction, lead terminal 150a has a portion 153a that bends from surface 130b of sealing portion 130 in a diagonal direction between the Z-axis direction and the Y-axis direction so as to move away from surface 130d, and a portion 154a that bends further in the Y-axis direction from portion 153a. Portion 154a has an installation surface for substrate 200. Portion 153a extends from surface 130a in the Y-axis direction and may be further bent perpendicular to the Z-axis direction so as to move away from surface 130d so as not to contact surface 130a.

[0078] By configuring it in this manner, the sealing portion 130 can be embedded further into the slit 210 than in the current sensor 10 of the third embodiment, in which the lead terminals 140a and 150a are linear, and the overall thickness of the current sensor 10 when mounted on the substrate 200 can be made even thinner.

[0079] Fig. 10A is a schematic plan view of the current sensor 10 mounted on the substrate 200 according to the fifth embodiment, as viewed from the ceiling surface side (Z-axis direction). Fig. 10B is a schematic plan view of the current sensor 10 mounted on the substrate 200 shown in Fig. 10A, as viewed from the side surface side (X-axis direction).

[0080] In the current sensor 10 according to the fifth embodiment, similarly to the current sensor 10 according to the third embodiment, the lead terminals 140a of the lead frame 140 extend linearly in the Y-axis direction from the surface 130a, and the lead terminals 150a of the lead frame 150 extend linearly in the Y-axis direction from the surface 130b. The lead terminals 140a have holes 148a for inserting the bolts 160. The substrate 200 also has holes 205 for inserting the bolts 160. The holes 148a may be through-holes or U-shaped grooves. The holes 148a may be countersunk.

[0081] Furthermore, the substrate 200 further has lands 203 on its back surface opposite the mounting surface on which the lands 202 are provided, for electrically connecting to a power supply system that applies voltage to the lead frame 140. The lead terminals 140a of the lead frame 140 and the lands 203 on the back surface of the substrate 200 are electrically connected via bolts 160. The substrate 200 may have mounted on its back surface an inverter module 170 that receives current flowing through the lead frame 140. The current from the inverter module 170 may be supplied to a motor or the like that serves as a drive source for a vehicle.

[0082] The lead terminals 140a can be electrically connected directly to the inverter module 170 via bolts 160 inserted into holes 148a provided at the tips of the lead terminals 140a, thereby eliminating the need for a copper foil pattern for electrically connecting the inverter module 170 and the lead terminals 140a.

[0083] Although the lands 202 do not necessarily have to be provided on the mounting surface of the substrate 200, the presence of the lands 202 allows the lead terminals 140a to be fixed by soldering to the substrate 200. Furthermore, the presence of the lands 202 can improve the heat dissipation effect.

[0084] FIG. 11 is a schematic plan view of a current sensor 10 according to another embodiment, as viewed from the ceiling surface side (Z-axis direction). As shown in FIG. 11 , the surface 132 a, which is the convex side surface of the groove 132 in the sealing portion 130, may be chamfered. The surface 132 a of the groove 132 in the sealing portion 130 may be rounded and the radius of the arc of the chamfered surface may be 0.1 mm or more. As described above, the groove spacing W2, which is wider than the groove spacing W3, serves as a marking space, and characters 136, such as the model number of the current sensor 10, may be engraved on the groove spacing W2. The wider groove spacing W2 may serve as a suction position for picking up a package.

[0085] FIG. 12 is a schematic cross-sectional view of a current sensor 10 according to another embodiment, as viewed from the side (X-axis direction). As shown in FIG. 12 , the magnetoelectric transducers 22 and 22 may be arranged via a support tape 180, such as a polyimide tape, adhered to the surface of the lead frame 140 opposite to the surface facing the signal processing IC 100. As described above, the magnetoelectric transducers 22 and 22 and the signal processing IC 100 are electrically connected via the wire 30. The signal processing IC 100 and the lead frame 150 are also electrically connected via the wire 108. Here, the groove 132 may be located at a position that does not overlap the wire 30 and the wire 108 in a plan view viewed from the Z-axis direction. By positioning the groove 132 relative to the wire 30 and the wire 108 in this manner, the maximum thickness of the current sensor 10 in the Z-axis direction can be minimized.

[0086] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included within the technical scope of the present invention.

[0087] It should be noted that the order of execution of each process, such as operations, procedures, steps, and stages, in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not specifically stated as "before," "prior to," etc., and that the processes can be performed in any order unless the output of a previous process is used in a subsequent process. Even if the operational flow in the claims, specifications, and drawings is described using "first," "next," etc. for convenience, this does not mean that the processes must be performed in this order.

[0088] 10 Current sensor 20, 22 Magnetoelectric conversion element 30, 108 Wire 130 Sealed portion 131 Hole 132, 134 Groove 140 Lead frame 140a Lead terminal 140b Conductor 141a Wide portion 142a Narrow portion 143a, 144a Portion 148a Hole 150 Lead frame 150a Lead terminal 150b Conductor 151a Wide portion 152a Narrow portion 153a, 154a Portion 160 Volt 170 Inverter module 200 Substrate 202, 203, 204 Land 205 Hole 210 Slit 210a Main portion 210b Extension portion

Claims

1. A first lead frame; an element that outputs a signal corresponding to a current flowing through the first lead frame; a second lead frame that is electrically insulated from the first lead frame and outputs a signal corresponding to the signal from the element; a sealing portion that seals the element, a portion of the first lead frame, and a portion of the second lead frame with a resin; Equipped with a terminal portion of the first lead frame is exposed from a first surface of the sealing portion; a terminal portion of the second lead frame is exposed from a second surface of the sealing portion that faces the first surface in a first direction; the sealing portion includes a third surface and a fourth surface opposed to each other in a thickness direction, and a fifth surface and a sixth surface opposed to each other in a second direction intersecting each of the first direction and the thickness direction, At least one surface other than the first surface and the second surface has at least one groove extending in the second direction; the at least one groove includes a first groove extending from the fifth surface toward the sixth surface in each of the third surface and the fourth surface, and a second groove extending from the third surface toward the fourth surface in each of the fifth surface and the sixth surface, Semiconductor package.

2. The semiconductor package according to claim 1 , wherein the first groove communicates with the second groove.

3. The semiconductor package according to claim 1 , wherein the at least one groove includes a groove that is continuous around the third surface, the fourth surface, the fifth surface, and the sixth surface.

4. The semiconductor package according to claim 1 , wherein the at least one groove has a recess width of 1 mm or more.

5. The semiconductor package of claim 1 , wherein the at least one groove has a depth of 0.5 mm or more.

6. 2. The semiconductor package of claim 1, wherein the sealing portion includes a plurality of grooves as the at least one groove, and a spacing between at least one of the plurality of grooves is wider than a spacing between other grooves other than the at least one groove among the plurality of grooves.

7. The semiconductor package of claim 1 , wherein the sealing portion includes a plurality of grooves as the at least one groove, and a spacing between grooves in a central portion of the plurality of grooves in the first direction is wider than a spacing between grooves other than the grooves in the central portion.

8. 2. The semiconductor package of claim 1, wherein the terminal portion of the first lead frame is electrically connected to a first power supply system, and the terminal portion of the second lead frame is connected to a second power supply system that applies a lower voltage than the first power supply system.

9. The semiconductor package according to claim 1 , wherein the mounting surfaces of the terminal portion of the first lead frame and the terminal portion of the second lead frame are located outside the thickness direction relative to the third surface or the fourth surface when viewed from the second direction.

10. The semiconductor package according to claim 1 , wherein a side surface of the at least one groove is inclined so as to widen from a bottom surface toward an opening when viewed from the second direction.

11. The semiconductor package according to claim 10 , wherein an inclination angle of the side surface of the at least one groove is 85 degrees or less with respect to a bottom surface.

12. 2. The semiconductor package according to claim 1, wherein a side surface of the convex portion of the at least one groove is chamfered or rounded to 0.1 mm or more.

13. The semiconductor package according to claim 1 , wherein the sealing portion seals the element, a portion of the first lead frame, and a portion of the second lead frame with a molding resin.

14. 2 . The semiconductor package according to claim 1 , wherein the element is at least one magnetoelectric conversion element that outputs a signal according to the magnitude of a magnetic field generated by a current flowing through the first lead frame.

15. a signal processing IC that processes the signal output from the at least one magnetoelectric conversion element and outputs the processed signal via the second lead frame; The semiconductor package according to claim 12 , wherein the encapsulation portion further encapsulates the signal processing IC.

16. the at least one magnetoelectric conversion element and the signal processing IC are electrically connected via a first wire; the signal processing IC and the second lead frame are electrically connected via a second wire; The semiconductor package according to claim 15 , wherein the at least one groove is provided at a position not overlapping with the first wire and the second wire in a plan view.

17. The semiconductor package of claim 1 , wherein the terminal portion of the first lead frame extends linearly from the first surface in the first direction, and the terminal portion of the second lead frame extends linearly from the second surface in the first direction.

18. 2. The semiconductor package according to claim 1, wherein the terminal portion of the first lead frame has a through hole for screwing the semiconductor package to a substrate on which the semiconductor package is mounted using a bolt.

19. A semiconductor package according to any one of claims 1 to 18; A substrate on which the semiconductor package is mounted; Equipped with The substrate includes a slit having a portion that is at least along the second direction at a position that overlaps with the sealing portion when viewed in a thickness direction of the sealing portion.

20. The module according to claim 19 , wherein the slit has a continuous portion that intersects with a fifth surface and a sixth surface that face each other in the second direction of the sealing portion when viewed in a thickness direction of the sealing portion.

21. The substrate is a first land electrically connected to the first lead frame; a second land electrically connected to the second lead frame; having The module of claim 19 , wherein the slit is disposed between the first land and the second land.

22. The module according to claim 21 , wherein a width of the slit in the second direction is greater than a sum of widths of the first land and the second land in the second direction.

23. The module of claim 19 , wherein the slit has a width of 1 mm or more.

24. the sealing portion includes a third surface and a fourth surface opposed to each other in a thickness direction, and a fifth surface and a sixth surface opposed to each other in the second direction intersecting with each of the first direction and the thickness direction, the at least one groove includes a first groove in each of the third surface and the fourth surface, the first groove extending from the fifth surface toward the sixth surface; the fourth surface faces the substrate; The module according to claim 19 , wherein the fourth surface of the sealing portion is located at a higher position relative to the substrate than respective mounting surfaces of the terminal portion of the first lead frame and the terminal portion of the second lead frame.

25. the terminal portion of the first lead frame has a first portion that is bent from the first surface toward the substrate in the thickness direction, and a second portion that is thinner than the first portion and extends from the first portion further in the thickness direction, penetrating a hole in the substrate; the terminal portion of the second lead frame has a third portion that is bent from the second surface toward the substrate in the thickness direction, and a fourth portion that is thinner than the third portion and extends further from the third portion in the thickness direction, penetrating a hole in the substrate; 20. The module of claim 19, wherein the diameter of the hole passing through the second portion of the substrate is narrower than the width of the first portion, and the diameter of the hole passing through the fourth portion of the substrate is narrower than the width of the third portion.

26. The module of claim 19 , wherein a width of the slit in the first direction and the second direction is greater than a width of the sealing portion in the first direction and the second direction, and a portion of the sealing portion is disposed within the slit.

27. 27. The module of claim 26, wherein the terminal portion of the first lead frame extends linearly from the first surface in the first direction, and the terminal portion of the second lead frame extends linearly from the second surface in the first direction.

28. the terminal portion of the first lead frame has a first portion that is bent from the first surface in the thickness direction away from the bottom surface of the sealing portion, or in an oblique direction between the thickness direction and the first direction away from the bottom surface of the sealing portion, when viewed from the second direction, and a second portion that is bent from the first portion in the first direction, and the second portion has an installation surface for the substrate, The module described in claim 26, wherein the terminal portion of the second lead frame has a third portion that, when viewed from the second direction, bends from the second surface in the thickness direction away from the bottom surface of the sealing portion, or in a diagonal direction between the thickness direction and the first direction away from the bottom surface of the sealing portion, and a fourth portion that bends from the third portion in the first direction, and the fourth portion has an installation surface for the substrate.

29. the terminal portion of the first lead frame has a through hole for screwing to the substrate via a bolt; 29. The module described in claim 28, wherein the terminal portion of the first lead frame is arranged on a mounting surface of the substrate, and the substrate has a land on a surface opposite the mounting surface for electrically connecting to a power supply system that applies voltage to the first lead frame, and the terminal portion of the first lead frame and the land are electrically connected via the bolt.