Manufacturing device and operation method for same

Abstract

The purpose of the present invention is to provide a technology that can improve the efficiency of work performed on a device. One of representative manufacturing devices of the present invention comprises a plurality of element devices, and a control unit that transmits data signals to the plurality of element devices, wherein the plurality of element devices are classified into groups for each function and include one or more groups that include: a first slave device group that includes at least one element device among the plurality of element devices; and a second slave device group that includes at least one element device among element devices except for the element devices included in the first slave device group from the plurality of element devices, wherein the control unit transmits the data signals to the first slave device group and the second slave device group.

Description

Manufacturing equipment and its operating method

[0001] The present invention relates to a manufacturing apparatus and a method for operating the same.

[0002] Control systems that support social infrastructure consist of sensors, controllers, and actuators. In a control system, the state of a physical object is acquired by a sensor and input to the controller, which then calculates control command values ​​to instruct the actuator, and the actuator acts on the physical object based on the control command values. For example, the desired control can be performed by periodically repeating this series of processes.

[0003] Such control systems are also used in semiconductor manufacturing equipment and semiconductor inspection equipment that manufacture semiconductor devices by processing semiconductor wafers, etc. For example, the use of such control systems has been considered in plasma processing equipment that uses plasma to perform an etching process on a film layer to be processed, among multiple film layers pre-formed on a semiconductor wafer placed in a processing chamber inside a vacuum vessel, to form a circuit structure for a semiconductor device.

[0004] Furthermore, because many semiconductor manufacturing equipment units are installed in a building, the control systems that control the operation of these multiple semiconductor manufacturing equipment units connect multiple sensors, controllers, and actuators to form a network. Technology for such networks is evolving to meet the requirements of control systems, including time constraints (e.g., maximum allowable delay time), cost, reliability, and field-specific requirements. Therefore, semiconductor manufacturing equipment networks are also required to accommodate the increasing scale and sophistication of control systems, faster communication speeds in network technology, shorter control communication cycles, and larger communication capacities.

[0005] One method to address these needs is to utilize multiple communication ports to send communication packets in parallel. In other words, by distributing the target communication devices and communicating in parallel, communication delays are reduced, resulting in faster communication, shorter control communication cycles, and larger communication capacity.

[0006] One known technique for controlling such communication is described in Japanese Patent Laid-Open No. 2021-015855 (Patent Document 1). The performance calculation method described in Patent Document 1 acquires shipping inspection data for multiple flow rate controllers, calculates a first performance value representing the performance of each flow rate controller as a deviation value based on the acquired shipping inspection data and a first coefficient for each item indicating the performance of the flow rate controller, and calculates a second performance value representing the performance of the processing device using the calculated first performance value and a second coefficient for each item indicating the performance of the processing device using the flow rate controller. The technology described in Patent Document 1 uses industrial Ethernet (registered trademark) technology as a configuration for communicating with multiple devices connected to the plasma processing device, and uses EtherCAT (registered trademark), which is an Ethernet technology for communication between multiple nodes in a network segment and transmits and receives process data in a single frame.

[0007] Japanese Patent Application Laid-Open No. 2021-015855

[0008] However, the EtherCAT used in Patent Document 1 requires that the electronic information (ENI file) describing the connection order of the components (devices) connected to it basically match the connection and order of each component. For this reason, it is known that by utilizing the hot connect function and connecting a group of multiple components (slaves) to a master, communication can be established even if the electronic information and each component do not match, making it possible to connect / disconnect some components.

[0009] However, in conventional technology, if a component connected as a slave device is removed for maintenance or to be replaced with a new one, and the master is considered the most upstream component, this component will no longer be able to communicate with other downstream slave devices. For example, it has been difficult to perform maintenance or replacement of a specific component among multiple components connected to a plasma processing apparatus while operating the plasma processing apparatus and performing maintenance or replacement of other components. This has resulted in a loss of efficiency in performing work on the plasma processing apparatus.

[0010] The difficulty of performing maintenance, replacement, and other tasks in parallel can be solved by connecting multiple hubs, each with a port for connecting slave components, to a master, with one slave component connected to each port. However, this master system requires an increased number of hubs depending on the number of slave components connected to the plasma processing apparatus, resulting in problems such as an increased installation area and complicated wiring. These problems were not adequately addressed in the prior art.

[0011] An object of the present invention is to provide a technique that can improve the efficiency of work performed on a device.

[0012] In order to solve the above problems, one representative manufacturing apparatus of the present invention is a manufacturing apparatus including a plurality of element devices and a control unit that transmits data signals to the plurality of element devices, wherein the plurality of element devices are grouped according to their respective functions and have one or more groups including a first slave device group including at least one element device of the plurality of element devices, and a second slave device group including at least one element device of the plurality of element devices excluding the element devices included in the first slave device group, and the control unit transmits the data signals to the first slave device group and the second slave device group.

[0013] According to the present invention, it is possible to provide a technique that can improve the efficiency of work performed on a device. Problems, configurations, and effects other than those described above will become apparent from the description of the following embodiments.

[0014] FIG. 1 is a diagram schematically illustrating an outline of the configuration of a plasma processing apparatus according to a first embodiment. FIG. 2 is a block diagram schematically illustrating an example of a control unit and each element device (component) connected thereto according to the first embodiment. FIG. 3 is a block diagram schematically illustrating an example of a control unit of the plasma processing apparatus according to the first embodiment and a slave device group connected thereto. FIG. 4 is a flowchart schematically illustrating a flow of maintenance work for multiple components in the control unit and slave device group shown in FIG. 3. FIG. 5 is a block diagram schematically illustrating an example of a control unit of a plasma processing apparatus and components connected thereto as a comparative example to FIG. 3. FIG. 6 is a block diagram schematically illustrating an example of a control unit of a plasma processing apparatus according to a second embodiment and a slave device group connected thereto.

[0015] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to these embodiments. In addition, in the description of the drawings, the same parts are denoted by the same reference numerals. When there are multiple components having the same or similar functions, they may be described by denoting the same reference numerals with different subscripts. Furthermore, when it is not necessary to distinguish between these multiple components, the subscripts may be omitted in the description.

[0016] This disclosure assumes that in a communication method using EtherCAT, after confirming the network configuration, the master device assigns a fixed address to each component included in the network and uses this fixed address to communicate with the component. This allows the master device to treat the specified component as a slave device and send command signals. It is also assumed that master devices with EtherCAT functionality have a hot connect function. Therefore, even if a component is removed while the network is in operation, such as when the component is powered and communicating, the master device can still specify other components that make up the network. Furthermore, a daisy chain refers to a situation in which the main connection system between devices is connected only in series and does not branch out to other devices. Here, the main connection system refers to a connection that transmits information such as control signals from a control unit.

[0017] First Embodiment A first embodiment will be described below with reference to FIGS. 1 to 5. FIG.

[0018] (Configuration of Plasma Processing Apparatus) Fig. 1 is a diagram showing a schematic overview of the configuration of a plasma processing apparatus 100 according to Example 1. The plasma processing apparatus (manufacturing apparatus) 100 includes a plurality of element devices and a control unit that transmits data signals to the plurality of element devices. The plasma processing apparatus 100 uses a microwave electric field as an electric field for generating plasma, generates ECR (Electron Cyclotron Resonance) between the microwave electric field and magnetic field, and generates plasma, which is then used to etch a substrate-like sample such as a semiconductor wafer.

[0019] The plasma processing apparatus 100 has a vacuum vessel 101 equipped with a processing chamber 104 inside where plasma is generated. A disk-shaped dielectric window 103 (made of quartz, for example) is placed on the processing chamber 104, which has a cylindrical upper portion, as a cover member, and constitutes part of the vacuum vessel 101. A sealing member such as an O-ring is disposed between the cylindrical vacuum vessel 101 and the dielectric window 103, ensuring airtightness inside the vacuum vessel 101 or processing chamber 104.

[0020] Furthermore, a vacuum exhaust port 110 connected to the processing chamber 104 is arranged at the bottom of the vacuum vessel 101, and is in communication with a vacuum pump 185 arranged below and connected to the vacuum vessel 101. Furthermore, a shower plate 102 forming a circular ceiling surface of the processing chamber 104 is provided below the dielectric window 103. The shower plate 102 has a disk shape with multiple gas inlet holes 102a arranged to pass through the center, and etching process gas is introduced into the processing chamber 104 through the gas inlet holes 102a. The shower plate 102 is made of a dielectric material such as quartz.

[0021] An electric field / magnetic field generating unit 160 is disposed above the vacuum vessel 101, and generates an electric field and a magnetic field for generating plasma 116. The electric field / magnetic field generating unit 160 includes a waveguide 105 and an electric field generating power supply 106. A high-frequency electric field generated by the electric field generating power supply 106 is transmitted through the inside of the waveguide 105 and introduced into the processing chamber 104. In this embodiment, the electric field generating power supply 106 is a microwave power supply that generates an electric field having a frequency of, for example, 2.45 GHz. As will be described later, the electric field generating power supply 106 includes a microwave power supply 235 and a microwave power matching box 236.

[0022] Magnetic field generating coils 107 are arranged around the lower end of the waveguide 105 and around the vacuum vessel 101. The magnetic field generating coils 107 are composed of an electromagnet and a yoke that are supplied with a direct current to form a magnetic field.

[0023] With processing gas introduced into the processing chamber 104 through the gas inlet holes 102a of the shower plate 102, the microwave electric field generated by the electric field generating power supply 106 propagates through the inside of the waveguide 105, passes through the dielectric window 103 and the shower plate 102, and is supplied from above to below into the processing chamber 104. Furthermore, a magnetic field generated by a direct current supplied to the magnetic field generating coil 107 is supplied into the processing chamber 104, and interacts with the microwave electric field, thereby generating ECR (Electron Cyclotron Resonance). The ECR excites, dissociates, or ionizes atoms or molecules of the processing gas, generating high-density plasma 116 in the processing chamber 104.

[0024] A wafer-holding electrode 120 is disposed below the space where plasma 116 is generated. The wafer-holding electrode 120 has a cylindrical protrusion (convex) at the center of its upper part, the upper surface of which is higher than the outer periphery, and a mounting surface 120a on the upper surface of the convex part on which a semiconductor wafer (hereinafter simply referred to as a wafer) 109, which is a sample (object to be processed), is placed. The mounting surface 120a is disposed so as to face the shower plate 102 or the dielectric window 103.

[0025] The wafer-holding electrode 120 includes an electrode substrate 108 , a dielectric film 140 provided on the electrode substrate 108 , and a susceptor ring 113 .

[0026] The electrode substrate 108 has a convex portion (protrusion) in the upper central portion and a concave portion (depression) surrounding the periphery thereof. The convex portion, which is circular in plan view, is located in the center of the electrode substrate 108, and a ring-shaped concave portion is located around it. The convex portion has a circular upper surface in plan view, and the upper surface of the convex portion is covered with a dielectric film 140. The upper surface of the dielectric film 140 forms a mounting surface on which the semiconductor wafer 109 is placed, and the mounting surface has a circular shape in plan view, its radius is equal to the radius of the upper surface, and the centers of the two circles overlap each other.

[0027] A conductive film 111, which is a film made of a plurality of conductive materials, is disposed inside the dielectric film 140. The conductive film 111 is connected to a DC power supply 126 via a high-frequency filter 125. When DC power is supplied to the conductive film 111, the semiconductor wafer 109 is attracted to the mounting surface via the dielectric film 140 on the conductive film 111. The conductive film 111 is an electrostatic attraction electrode. For convenience, the convex portions (protrusions) of the electrode base material 108 and the dielectric film 140 including the conductive film 111 are referred to as the sample stage ST.

[0028] The electrode substrate 108 is connected to a high frequency power supply (RF power supply) 232 via a high frequency power supply matching box (RF matching box) 233. The high frequency power supply 232 and the high frequency power supply matching box 233 are arranged at a location closer than the distance between the high frequency filter 125 and the conductive film 111. Furthermore, the high frequency power supply 232 is connected to the ground 112. The high frequency power supply matching box 233 and the high frequency power supply 232 may be a single set, or may be a set of high frequency power supplies of a plurality of matching boxes. In other words, a plurality of high frequency power supplies (RF power supplies) 232 １ ~232 ｍ , each of which corresponds to a plurality of high frequency power matching units 233 １ ~233 ｍ The plurality of high frequency power sources 232 are connected to the electrode substrate 108 via the １ ~232 ｍ If a 100 MHz to 100 MHz frequency is used, a radio frequency (RF) mixer 234 may be provided as described below.

[0029] During processing of the semiconductor wafer 109, at least one high frequency power source 232 or multiple high frequency power sources 232 １ ~232 ｍ High frequency powers of predetermined frequencies are supplied to the electrode substrate 108 (i.e., the sample stage ST) from the respective electrodes 116. A bias potential having a distribution according to the difference between the potential of the plasma 116 and the potential of the electrode substrate 108 is formed above the semiconductor wafer 109 attracted and held on the mounting surface via the dielectric film 140.

[0030] The electrode substrate 108 is provided with multiple coolant flow paths arranged spirally or concentrically around the central axis of the electrode substrate 108 in the vertical direction to cool the wafer mounting electrode 120. The inlets and outlets of the coolant flow paths to the wafer mounting electrode 120 are connected by pipes to a temperature regulator (not shown) that has a refrigeration cycle and adjusts the coolant to a temperature within a predetermined range by heat transfer. The coolant that flows through the coolant flow path and has its temperature changed by heat exchange flows out from the outlet and passes through a flow path inside the temperature regulator via a pipe to be adjusted to a predetermined temperature range, and is then supplied to the coolant flow paths within the electrode substrate 108 and circulates.

[0031] A ring-shaped susceptor ring 113 is placed on the recess of the electrode substrate 108, surrounding the protrusion. The susceptor ring 113 is made of at least one member made of a dielectric material, for example, quartz or a ceramic such as alumina. Since at least the side surface of the electrode substrate 108 and the bottom surface of the recess are covered with the susceptor ring 113, the electrode substrate 108 can be prevented from being damaged by plasma.

[0032] 1, the electric field generating power supply 106, the magnetic field generating coil 107, the high frequency power supply 232, the high frequency filter 125, the DC power supply 126, the high frequency power supply matching box 233, etc. are connected to the control unit 170 by wire or wirelessly as shown by the dashed lines so as to be able to communicate with the control unit 170. The detailed configuration of the control unit 170 will be described later.

[0033] In this embodiment, the processing gas is supplied through a pipe extending from a gas supply source for each type of gas, which is arranged below the floor of the building in which the plasma processing apparatus 100 is installed, and connected to the vacuum vessel 101. The pipe has a plurality of pipes inside which are separated into a plurality of types of gas, and mass flow controllers (MFCs) 231 arranged on these pipes to adjust the flow rate or speed of each type of gas. １ ~231 ｎ In the integrated gas box 181, pipelines for supplying the various process gases join together to form a plurality of gas supply pipes 1016, which extend to the outside of the integrated gas box 181.

[0034] The flow of gas introduced into the gap between the dielectric window 103 and the shower plate 102, diffused, and supplied to the processing chamber 104 through the gas inlet holes 102a is adjusted by opening or closing the on-off valves 1017 disposed on the gas supply pipes 1016. In this embodiment, a mixed gas of a reactive gas that is reactive with the film to be processed on the upper surface of the semiconductor wafer 109 or that is made reactive in the plasma 116, and an inert gas that dilutes the reactive gas, is used as the processing gas.

[0035] A vacuum pump 185 such as a turbo molecular pump is disposed and connected below the processing chamber 104 to exhaust gases and reduce the pressure inside the processing chamber 104. The vacuum pump 185 is connected to a vacuum vessel 101 that forms the bottom of the processing chamber 104 via an exhaust amount control valve 186 that adjusts the exhaust flow rate or speed by increasing or decreasing the area of ​​the flow path.

[0036] (Plasma Processing Method) Next, a plasma processing method using the above-described plasma processing apparatus 100 will be described.

[0037] First, the above-described plasma processing apparatus 100 is prepared.

[0038] Next is the process of loading the semiconductor wafer 109. A vacuum transfer chamber, which is depressurized to the same pressure as the processing chamber 104, is connected to the sidewall of the vacuum vessel 101. The semiconductor wafer 109 is placed on the tip of the arm of a wafer transfer robot arranged in the vacuum transfer chamber, and is loaded into the processing chamber 104. Next, the semiconductor wafer 109 is placed on the mounting surface and held by electrostatic adsorption on the sample stage ST.

[0039] Next is the etching gas introduction process. After the transfer robot leaves the vacuum transfer chamber, the interior of the processing chamber 104 is sealed. In this state, etching gas is supplied into the processing chamber 104. The introduced gas is introduced into the processing chamber 104 through the gas introduction holes 102a of the shower plate 102.

[0040] Gases and particles inside the processing chamber 104 are evacuated through the vacuum exhaust port 110 by the operation of a vacuum pump 185 connected to the vacuum exhaust port 110. The pressure inside the processing chamber 104 is adjusted to a predetermined pressure suitable for processing the semiconductor wafer 109 according to the balance between the amount of gas supplied from the gas introduction holes 102a of the shower plate 102 and the amount of gas exhausted from the vacuum exhaust port 110.

[0041] Next is the plasma etching (plasma processing) process. Although details are omitted, after adjusting the temperature of the semiconductor wafer 109 as necessary, a microwave electric field and magnetic field are supplied into the processing chamber 104, and plasma 116 is generated using gas. Once the plasma 116 is formed, radio frequency (RF) power is supplied from the radio frequency power supply 124 to the electrode substrate 108, forming a bias potential above the upper surface (main surface) of the semiconductor wafer 109. Charged particles such as ions in the plasma 116 are attracted to the upper surface of the semiconductor wafer 109 in accordance with the potential difference between the potential of the plasma 116 and the bias potential.

[0042] Furthermore, the etching process is performed by colliding the charged particles with the surface of a film layer to be processed that has been previously placed on the upper surface of the semiconductor wafer 109. During the etching process, the processing gas introduced into the processing chamber 104 and particles of reaction products generated during the process are exhausted from the vacuum exhaust port 110.

[0043] Next is the process of unloading the semiconductor wafer 109. After the etching process, the semiconductor wafer 109 is unloaded from the processing chamber 104 while being supported by the tip of the arm of the aforementioned transfer robot.

[0044] (Configuration of the Control Unit) Next, the details of the configuration and function of the control unit 170 shown in FIG. 1 will be described. FIG. 2 is a block diagram schematically illustrating an example of the control unit 170 and each element device (component) connected thereto according to the first embodiment. The element devices are grouped according to their respective functions, and have one or more groups including a first slave device group including at least one element device among the plurality of element devices, and a second slave device group including at least one element device among the plurality of element devices excluding the element devices included in the first slave device group. The control unit 170 transmits data signals to the first slave device group and the second slave device group. The control unit 170 also includes a master device that generates a data signal and a hub 220 connected to the master device and having at least a first communication unit and a second communication unit. The first slave device group is connected to the first communication unit of the hub 220, and the second slave device group is connected to the second communication unit of the hub 220. In this embodiment, the control unit 170 internally includes the master device 210 and the hub 220. The hub 220 is communicatively connected directly to the master device 210, and has multiple (three in this embodiment) communication sections (ports) 213a to 213c connected to each of the slave device groups 230a to 230c. By providing the hub 220, the master device 210 is communicatively connected to the slave device groups 230a to 230c, each of which has at least one component.

[0045] In the control unit 170, the master device 210 generates data signals to be transmitted to multiple components. The master device 210 transmits and receives data to and from each component of the slave device groups 230a-230c connected to each port of the hub 220 through each port of the hub 220. Furthermore, the components belonging to each slave device group 230a-230c connected to each port of the hub 220 are controlled based on command signals or data signals from the master device 210. In this embodiment, the hub 220 directly connected to the master device 210 has at least one port, and multiple components are connected to each master port in a daisy chain. The slave device groups 230a-230c are connected in a daisy chain via the hub 220. The control unit 170 and the slave device groups 230a-230c use a communication method that employs EtherCAT.

[0046] The master device 210 includes, for example, a CPU 211 and a data storage unit 219 configured with memory and RAM. The master device 210 may also include a datagram generation unit 217 that generates control data and command signals for the components belonging to each of the slave device groups 230a to 230c.

[0047] Each component included in the plurality of slave device groups 230a to 230c is connected in a daisy chain manner to be able to communicate with the master device 210 via a port of the hub 220. In this embodiment, the components in the slave device group 230a are connected to a mass flow controller (MFC) 231. １ , mass flow controller (MFC) 231 ２ , mass flow controller (MFC) 231 ３ , ..., mass flow controller (MFC) 231 ｎ (n is a positive integer). Furthermore, the slave device group 230b includes a plurality of high frequency power sources 232 １ ~232 ｍ (m is a positive integer) and a high frequency power matching box 233 for each high frequency power source. １ ~232 ｍand a high frequency mixer 234, and the slave device group 230c includes a microwave power supply 235 and a microwave power supply matching box 236 which is a matching box for the microwave power supply.

[0048] Note that the components included in the slave device groups 230a to 230c are not limited to these, and other components may also be included in the slave device groups 230a to 230c.

[0049] In this embodiment, the master device 210 communicates command signals or data with multiple slave device groups 230a-230c and the components belonging to these groups at a predetermined cycle via a transmission path 240. In this embodiment, three slave devices 230a-230c are shown as being communicatively connected to the master device 210, but the number of slave device groups 230 is not limited to three and may be one, two, or three or more. Although the transmission path 240 is shown as a single line, it actually includes two transmission paths: a transmission path for transmission signals and a transmission path for reception signals. Furthermore, a LAN cable or the like may be used for the transmission path 240.

[0050] As shown in FIG. 2, the master device 210 includes at least one packet generator 212 and at least one hub 220 .

[0051] The hub 220 includes a communication unit 213d communicatively connected to the packet generation unit 212 and a datagram analysis unit 218 (described later). Furthermore, in the hub 220, the communication unit 213d is communicatively connected to the communication units 213a and 213c, and the communication unit 213b is communicatively connected to the communication units 213a and 213c. The communication unit 213d is an interface on the master device 210 side. A transmitter 214d of the communication unit 213d transmits signals to the communication unit 213a and also transmits signals to the datagram analysis unit 218 of the master device 210. A receiver 215d of the communication unit 213d receives signals from the communication unit 213c and also receives signals from the packet generation unit 212 of the master device 210.

[0052] The communication units 213a to 213c are interfaces on the slave device groups 230a to 230c side. Each of the communication units 213a to 213c includes a pair of transmitters 214a to 214c that transmit packets (data signals), which are signals constituting command signals or data generated by the packet generator 212, to the connected slave device groups 230a to 230c, and a pair of receivers 215a to 215c that receive signals containing data from the slave device groups 230a to 230c.

[0053] The packets received by the receivers 215a-215c include data indicating the device status from each component belonging to each slave device group 230a-230c and response signals requested in the command signals. In this embodiment, signals including packets transmitted from the transmitters 214a-214c are sequentially received via each port by each component connected in a daisy chain in the slave device groups 230a-230c, and then a signal is returned from the component connected most downstream to the master device 210, which is the most upstream. The packets returned to the master device 210 are sent to the datagram analyzer 218, which analyzes the daisy chain connection status of each component belonging to each slave device group 230a-230c, and the CPU 211 generates command signals to operate the necessary components.

[0054] The master device 210 coordinates the operation of each component belonging to the slave device group 230a to 230c. For example, the master device 210 includes the MFC 231. １The CPU 211 adjusts the flow rate of gas flowing through a gas flow path in which the plasma processing apparatus 100 is disposed. In this embodiment, the CPU 211 receives packets returned through each slave device group 230a to 230c, or in response to a command signal from a host computer (not shown) that transmits command signals to a plurality of semiconductor manufacturing devices, including the plasma processing apparatus 100, in a building in which the plasma processing apparatus 100 is installed, and transmits a signal to the datagram generation unit 217 in accordance with a predetermined procedure, procedure, or recipe pre-stored in the data storage unit 219. The CPU 211 causes the datagram generation unit 217 to create a datagram in which command signals and data for adjusting the operation of at least one component of each slave device group 230a to 230c are arranged in a predetermined order. The datagram generated by the datagram generation unit 217 is transmitted to the packet generation unit 212.

[0055] Each packet generator 212 generates a command signal or data (control data) for adjusting the operation of at least one component connected to the corresponding slave device group 230a-230c that is the target of adjustment, specifically, data for commanding an operation related to the processing of semiconductor wafers 109 as a step in the manufacturing of semiconductor devices in the plasma processing apparatus 100. The packet generator 212 is disposed in the master device 210 and generates data according to the components in the slave device groups 230a-230c.

[0056] The packet generation unit 212, for example, for the slave device group 230a, generates a packet from the mass flow controller 231 connected to the corresponding communication unit 213a. １ , mass flow controller 231 ２ , mass flow controller 231 ３ Similarly, the packet generator 212 generates data for adjusting the operation of the slave device group 230b (for example, the flow rate of each mass flow controller or the opening and closing of a flow path). １ ~232 ｍ and a high frequency power matching box 233 for each high frequency power source. １ ~233ｍ and generates data for adjusting the operation of the high frequency mixer 234. Similarly, the packet generation unit 212 generates data for adjusting the operation of the microwave power supply 235 and the microwave power supply matching box 236 connected to the corresponding slave device group 213c, for example, for the slave device group 230c.

[0057] In this way, the packet generator 212 generates data for each component connected to each of the slave device groups 230a to 230c in association with each component, and stores the data in a single packet. The packet may also include a command signal for at least one specific component.

[0058] In this embodiment, the communication units 213a-213c of the hub 220 transmit packets containing command signals and data (instruction data) received from the packet generation unit 212 to the multiple slave device groups 230a-230c and each of the components belonging to them at predetermined intervals via the transmission path 240. Similarly, the communication units 213a-213c receive signals containing data in response to signals returned from each component of each slave device group 230a-230c. Here, the response data may include, for example, data indicating whether the processing instructed by the instruction data was completed successfully.

[0059] Upon receiving a command signal from CPU 211, datagram generation unit 217 writes instruction data, which is generated as a packet in packet generation unit 212, into a datagram or a data frame at predetermined intervals. The generated datagram or data frame is transmitted to packet generation unit 212.

[0060] The datagram analysis unit 218 also periodically executes a process of acquiring data indicating the operating status of each component from the response data obtained from each of the slave device groups 230 a to 230 c. The data indicating the operating status may include, for example, data indicating that the slave device groups 230 a to 230 c or each component belonging to these groups are operating normally, or data indicating that an abnormality has occurred in these groups.

[0061] Furthermore, the data obtained by the datagram analysis unit 218 is sent to the CPU 211, and command signals and data are calculated based on this data. Furthermore, the CPU 211 calculates the period for transmitting packets to each of the slave device groups 230a to 230c and executing processing thereon, and the period for executing processing for obtaining data indicating the operating status from response data.

[0062] In this embodiment, EtherCAT, an industrial Ethernet standard, is used as a communication method in the network shown in Figure 2, which is configured with the master device 210, hub 220, and slave device groups 230a-230c. In EtherCAT, the master device 210 connected thereto transmits datagrams to the multiple slave device groups 230a-230c, and the components included in these multiple slave device groups 230a-230c read and write data on the fly from the datagrams received from the master device 210. In this case, communication between the master device 210 and the multiple slave device groups 230a-230c is performed at a specific cycle using data called process data objects (PDOs).

[0063] Furthermore, communication is performed in response to a request from the master device 210 using data called a service data object (SDO). In this embodiment, which uses EtherCAT as the network communication method, at least one node among the nodes connected to the transmission path 240 functions as the master device 210, and the other nodes function as slave device groups 230a to 230c (or the components belonging to these). The master device 210 manages (adjusts) the timing of datagram communication on the network.

[0064] In this embodiment, the communication units 213a to 213c of the master device 210 transmit packets generated by the respective packet generation units 212 from datagrams containing instruction data to each of the connected slave device groups 230a to 230c. Each component of each of the slave device groups 230a to 230c that receives the packets writes response data to the instruction data in the datagram, in accordance with the instruction data assigned to it from the instruction data written in the datagram transmitted as a packet. The slave device groups 230a to 230c then transmit packets based on the datagrams in which the response data to the instruction data assigned to them has been written, to the communication units 213a to 213c via the ports of the hub 220 to which the slave device groups 230a to 230c to which they belong are connected.

[0065] Packets received by the receiving units 215a to 215c are sent to the datagram analyzing unit 218 of the master device 210, which detects the response data contained in the packets and sends the response data to the CPU 211. Data exchanged between the master device 210 and the slave device groups 230a to 230c (and each component belonging to them) may include not only instruction data and response data, but also status data of each component of the slave device groups 230a to 230c.

[0066] (Packet Flow) Here, the flow of packets (data signals) between the master device 210 and the slave device groups 230a to 230c will be specifically described. First, the master device 210 transmits a packet generated by the packet generation unit 212 to the communication unit 213d of the hub 220. The communication unit 213d receives the packet transmitted from the master device 210 via the reception unit 215d, and transmits the packet to the communication unit 213a via the transmission unit 214d.

[0067] The communication unit 213a receives a packet from the communication unit 213d using the receiving unit 215a. The communication unit 213a transmits the packet to the slave device group 230a using the transmitting unit 214a. In the slave device group 230a, the packet is transmitted to the MFC 231. １ , mass flow controller 231 ２ , mass flow controller 231 ３ , ..., mass flow controller 231 ｎ The signal is transmitted in order to the mass flow controller 231. ｎ The packet that has reached the mass flow controller 231 ｎ－１ , ... to the mass flow controller 231 ３ , mass flow controller 231 ２ , mass flow controller 231 １ The communication unit 213a receives the packet that has circulated through the slave device group 230a using the receiving unit 215a, and transmits the packet to the communication unit 213b using the transmitting unit 214a.

[0068] Next, the communication unit 213b receives the packet from the communication unit 213a using the receiving unit 215b. The communication unit 213b then transmits the packet to the slave device group 230b using the transmitting unit 214b. In the slave device group 230b, the packet is transmitted to the high frequency power source 232. １ to high frequency power supply 232 ｍ , high frequency power matching box 233 １ to high frequency power matching box 233 ｍ, and the high frequency mixer 234. The packet that has reached the component connected to the most downstream side of the slave device group 230b is transmitted to the high frequency power supply 232 via the components of the slave device group 230b. １ The communication unit 213b receives the packet that has circulated through the slave device group 230b using the receiving unit 215b. The communication unit 213b then transmits the packet to the communication unit 213c using the transmitting unit 214b.

[0069] Next, the communication unit 213c receives the packet from the communication unit 213b via the receiving unit 215c. The communication unit 213c transmits the packet to the slave device group 230c via the transmitting unit 214c. In the slave device group 230c, the packet is transmitted in this order through the microwave power supply 235 and the microwave power supply matching box 236. The packet that has reached the component connected most downstream in the slave device group 230c returns to the microwave power supply 235 via the components of the slave device group 230c. The communication unit 213c receives the packet that has circulated through the slave device group 230c via the receiving unit 215c. The communication unit 213c transmits the packet to the communication unit 213d via the transmitting unit.

[0070] Finally, the communication unit 213d receives the packet via the receiving unit 215d, and transmits the packet to the datagram analysis unit 218 of the master device 210, which will be described later.

[0071] In this way, packets sent from the master device 210 circulate between the hub 220 and the slave device groups 230a to 230c and return to the master device 210. Note that the combination of the communication units 213a to 213c and the slave device groups 230a to 230c is not limited to this. The communication units connecting the slave device groups can be selected as appropriate.

[0072] (Operating Method) Next, an example of the configuration of the control unit 170 and the slave device group according to the first embodiment, and a flow of maintenance work for components belonging to the slave device group will be described with reference to Fig. 3 and Fig. 4. Fig. 3 is a block diagram schematically illustrating an example of the control unit 170 of the plasma processing apparatus according to the first embodiment and the slave device group connected thereto.

[0073] In Fig. 3, hubs 220a and 220b are shown instead of hub 220 in Fig. 2. In Fig. 3, master device 210 constituting control unit 170 is directly connected to hub 220a, and hub 220b is further connected to hub 220a. Hubs 220a and 220b are equipped with multiple communication units and are connected to each other so that they can communicate with each other via the communication units. Specifically, slave device group 230b1 is connected to hub 220a, and slave device groups 130b2, 230c, and 230a are connected to hub 220b. The multiple component devices connected to the two hubs 220a and 220b are divided into four groups based on specific purposes, and adjacent components within each group are connected in a chain so that they can communicate with each other.

[0074] To explain the flow of packets in detail, the hub 220a receives the packets transmitted from the master device 210. The hub 220a transmits the packets to the slave device group 230b1. In the slave device group 230b1, the packets are transmitted to the high frequency power supply 232. １ to high frequency power supply 232 ｍ The hub 220a receives the packet that has circulated through the slave device group 230b1. The hub 220a transmits the packet to the hub 220b.

[0075] The hub 220b receives the packet from the hub 220a. The hub 220b transmits the packet to the slave device group 230b2. In the slave device group 230b2, the packet is transmitted to the high frequency power matching device 233. １The packet circulates from the microwave power source 235 to the high frequency mixer 234. The hub 220b receives the packet that has circulated through the slave device group 230b2 and transmits it to the slave device group 230c. In the slave device group 230c, the packet circulates from the microwave power source 235 to the component connected most downstream of the slave device group 230c. The hub 220b receives the packet that has circulated through the slave device group 230c and transmits it to the slave device group 230a. In the slave device group 230a, the packet circulates from the mass flow controller 231 １ to mass flow controller 231 ｎ It travels around until.

[0076] Hub 220b receives the packet that has circulated through slave device group 230a, and transmits the packet to hub 220a, which then transmits the packet to master device 210.

[0077] The slave device group 230b1 includes a high frequency power supply 232 that generates a bias potential above the semiconductor wafer 109 placed on the dielectric film 140 of the wafer placement electrode 120. １ ~232 ｍ On the other hand, the slave device group 230b2 includes a high frequency power supply 232 １ ~232 ｍ A plurality of high frequency power matching units 233 corresponding to each of the １ ~233 ｍ and a high-frequency mixer 234, which are connected in a daisy chain in this order. In Fig. 3, the components belonging to slave device groups 230b1 and 230b2 are clearly separated, and during operation of the plasma processing apparatus, some of the components belonging to one slave device group are not installed as components belonging to the other slave device group.

[0078] Similarly, the slave device group 230c includes a microwave power supply 235 and a microwave power supply matching box 236 for generating plasma in the plasma processing apparatus 100, and these are connected in a daisy chain.１ , mass flow controller 231 ２ , mass flow controller 231 ３ Mass flow controller 231 ｎ These are connected in a chain.

[0079] The microwave power supply 235 constitutes the electric field generating power supply 106 disposed in the upper part of the plasma processing apparatus 100, and is a power supply that forms an electric field of a microwave of 2.45 GHz. The electric field generating power supply 106 also includes a microwave power matching box 236. The microwave power matching box 236 adjusts impedance so as to suppress the generation of reflected waves in the waveguide 105.

[0080] High frequency power supply 232 １ ~232 ｍ is disposed in the lower part of the plasma processing apparatus 100. At least one high frequency power supply 232 is disposed in the plasma processing apparatus 100, and is electrically connected to the bias application electrode inside the wafer placement electrode 120 or the electrode substrate 108. １ ~232 ｍ The set of frequencies is capable of outputting high frequency power at a plurality of frequencies, and is configured to be able to switch between the powers of these frequencies at predetermined intervals, or to output one at 0 and the other at a predetermined value.

[0081] For example, the plasma processing apparatus 100 may include one high-frequency power supply 232 capable of switching between outputting high-frequency power at 400 MHz and outputting high-frequency power at 800 MHz, or may include a plurality of high-frequency power supplies 232 capable of outputting high-frequency power at 400 MHz and outputting high-frequency power at 1.2 MHz. １ ~232 ｍ may be used, and the output from each may be switched at predetermined intervals and supplied to the wafer-holding electrode 120. In Fig. 3, when creating the power supply conversion table, all of the high-frequency power supplies used for processing the semiconductor wafer 109 are connected in a daisy chain and are connected to the hubs 220a and 220b or the master device 210 so as to be able to communicate with each other.

[0082] High frequency power matching box 233 １ ~233ｍ A high frequency power supply 232 is provided on the upper part of the plasma processing apparatus 100. １ ~232 ｍ In the case where the plasma processing apparatus 100 is provided with one high frequency power supply 232 capable of switching between 400 MHz and 800 MHz and outputting high frequency power, a high frequency power supply matching box 233 corresponding to the switching between 400 and 800 MHz is provided. In addition, in the case where the plasma processing apparatus 100 is provided with a plurality of high frequency power supplies 232 capable of outputting high frequency power of 400 MHz and 1.2 MHz, １ ~232 ｍ When a plurality of high frequency power sources 232 are used, １ ~232 ｍ High frequency power matching box 233 according to the number of １ ~233 ｍ and a high-frequency mixer 234 are provided in the plasma processing apparatus 100. In this example, the high-frequency power supply 232 １ ~232 ｍ and high frequency power matching box 233 １ ~233 ｍ The slave device groups 230b1 and 230b2 are arranged in separate groups, i.e., slave device groups 230b1 and 230b2. Even when the specifications of the plasma processing apparatus 100 are changed in accordance with the processing required, the slave device groups 230b1 and 230b2 are configured so that component work (e.g., replacement or addition of high frequency power supplies or high frequency power supply matching devices, or adjustment or modification of functions) can be performed in parallel.

[0083] A mass flow controller 231 disposed on a path including a pipe through which the processing gas is supplied. １ ~231 ｎ are arranged in the lower part of the plasma processing apparatus 100, and are arranged together in at least one box so that the pipelines that they constitute extend in parallel. １ ~231 ｎ At least a portion of the may be replaceable, removable or alterable.

[0084] As described above, the multiple components are grouped according to their respective functions, such as supplying high frequency bias power, matching high frequency bias power, supplying power or a magnetic field for plasma generation, and adjusting the amount of gas supplied into the processing chamber 104. The multiple slave device groups 230b1, 230b2, 230c, and 230a are each made up of components divided according to their functions.

[0085] 3, unlike FIG. 2, shows two hubs, with slave device group 230b1 connected to hub 220a, and slave device group 230b1 and slave device groups 230b2, 230c, and 230a connected to hub 220b. In the control unit 170 of this embodiment, the number of hubs 220 is not limited to one, as long as at least one hub 220 is directly connected to the master device 210. Furthermore, if there are multiple hubs, the hubs are connected in a daisy chain so that they can communicate with each other. In FIG. 3 as well, slave device group 230b1 is connected to master device 210 via hub 220a directly, and hubs 220a and 220b are connected so that they can communicate with each other.

[0086] (Component Replacement Work) The high frequency power source (RF power source) 232 included in the slave device group 230b1, which is surrounded by a dashed line in FIG. 3, ２ and a mass flow controller (MFC) 231 included in the slave device group 230a. ２ The operation of the plasma processing apparatus 100 when maintenance work is performed will be described below.

[0087] 4 is a flowchart showing a flow of maintenance work for a plurality of components in the control unit and the slave device group shown in FIG. 3. In FIG. 4, the high frequency power supply 232 shown in FIG. ２ and mass flow controller 231 ２ The RF replacement operation 508 is performed by replacing a predetermined high frequency power source 232 among the plurality of high frequency power sources in the slave device group 230b1. ２The MFC replacement operation 509 is an operation to replace a predetermined mass flow controller 231 among the plurality of mass flow controllers in the slave device group 230a. ２ The maintenance work in this embodiment is the replacement of each device with a new device of the same type.

[0088] The overall flow of the work is as follows: When the work starts, the high frequency power supply 232 ２ , mass flow controller 231 １ Next, preparation 501 is performed to perform maintenance work on the high frequency power supply 232. ２ , mass flow controller 231 １ After pre-replacement works 502a and 502b are performed on the respective high-frequency power sources 232, replacement works 503a and 503b are performed. ２ , mass flow controller 231 １ After the replacement, confirmation work 504a and 504b are performed to check whether the replacement work 503a and 503b have been performed properly. ２ For the above, a conversion table is further created (505).

[0089] Next, the test run mode 506 step is performed, and the high frequency power supply 232 replaced with the new equipment is ２ , mass flow controller 231 ２ A test run of the plasma processing apparatus 100 including the replaced high frequency power supply 232 is performed. ２ For the replaced high frequency power supply 232b, a discharge characteristics confirmation step 507 is performed, and predetermined characteristics of the plasma generated in the plasma processing apparatus 100 using the replaced high frequency power supply 232b are detected. These steps are used to check whether any malfunctions or failures have occurred during the replacement work or any work thereafter. When it is confirmed that no malfunctions or failures have occurred, the work is completed.

[0090] In FIG. 4, the step of advance preparation 501 is to ２ , mass flow controller 231 ２ In the test operation mode 506, the common operation is performed on the plasma processing apparatus 100.２ , mass flow controller 231 ２ The plasma processing apparatus 100 is operated with the RF power supply 232 replaced. ２ The MFC replacement work 509 is the work to be performed on the mass flow controller 231. ２ In this embodiment, it will be explained below that the RF replacement operation 508 and the MFC replacement operation 509 can be performed in parallel.

[0091] (Flowchart of replacement work) When the process of advance preparation 501 is started, first, the operation of the plasma processing apparatus 100 is changed to a mode for maintenance and inspection work (maintenance mode) through the control unit 170 (master device 210). Specifically, the master device 210 transmits a command signal to each component to set it to the maintenance mode. If there is a component that does not have a maintenance mode set in advance, such a component is set to an operating state suitable for performing maintenance and inspection work. Next, the mass flow controller 231 in the integrated gas box 181 is １ ~231 ｎ The pipes to which the mass flow controllers 231 are connected are connected to an exhaust pipe for vacuum evacuation. １ ~231 ｎ Gas is supplied into the processing chamber 104 from each of the mass flow controllers 231. １ ~231 ｎ The inside of the gas supply path containing the gas is evacuated. After that, the valve is closed, and the mass flow controllers 231 １ ~231 ｎ The flow rate setting of the RF replacement work 508 is set to 0. The advance preparation 501 is a process common to the RF replacement work 508 and the MFC replacement work 509.

[0092] After the above-mentioned advance preparation 501 work, pre-replacement work 502a and 502b are performed, but maintenance work such as opening the inside of the processing chamber 104 to the atmosphere and cleaning or replacing components placed inside the processing chamber 104 after opening to the atmosphere may be performed in parallel with the work after the pre-replacement work 502a and 502b shown in FIG. 4.

[0093] Next, pre-replacement operations 502a and 502b are performed. ２ In the RF replacement work 508, as a pre-replacement work 502a, a power supply cut-off device such as a breaker is operated to turn off the high frequency power source 232. ２ The supply of power to the mass flow controller 231 is stopped. ２ In the MFC replacement work 509, as a pre-replacement work 502b, the master device 210 checks for the presence or absence of gas leaks in the gas supply path (leak check). If a leak is confirmed, the location of the leak is detected and efforts are made to prevent the leak. ２ The presence or absence of an abnormality in the high frequency power supply 232 is confirmed. ２ Even if the power supply to the mass flow controller 231 is stopped, the master device 210 has a hot connect function. ２ It is possible to specify the type and perform the work to check for any abnormalities.

[0094] Next, the high frequency power supply 232 ２ and replacement work 503a for replacing the mass flow controller 231. ２ In the replacement work 503a, first, the high frequency power supply 232 is replaced. ２ and the power supply to the high frequency power source 232 ２ After it is confirmed that the power supply is off, the high frequency power supply 232 ２ All wiring and piping connected to the high frequency power supply 232 are removed. ２ The new high frequency power supply 232 is removed. ２ is newly installed, the wiring and piping are installed in the reverse order to the previous step, and the power is turned on. ２ Power supply to the station will be restored.

[0095] Mass flow controller 231 ２ In the replacement work 503b, first, the mass flow controller 231 ２ Next, the wiring and piping for communication and power supply connected to and attached to the mass flow controller 231 are removed.２ to the bracket in the integrated gas box 181, and remove the mass flow controller 231. ２ Then, remove the new mass flow controller 231 from the bracket. ２ is attached to the bracket and fixed in place, and wiring and piping are then attached.

[0096] During the replacement work, the high frequency power supply 232 ２ and mass flow controller 231 ２ The identification codes of each device, such as the serial number before and after the replacement, are confirmed and recorded.

[0097] Next, the confirmation work 504a after the replacement of the high frequency power supply 232b and the mass flow controller 231 ２ In the post-replacement confirmation work 504a, the high frequency power supply 232 is ２ In this case, the high frequency power supply 232 is turned off by turning off a power supply cut-off device such as a breaker. ２ The slave device group 230b1 is set to a state in which power is being supplied to the high frequency power sources 232, and it is checked whether any problems have occurred in other devices of the plasma processing apparatus 100. ２ The master device 210 confirms that the EtherCAT ID (identification signal or identification symbol) is a predetermined value.

[0098] After the replacement, the components themselves may be different, but the master device 210 uses fixed addresses and therefore treats the components connected to the network with the same addresses. ２ If the ID of the slave device group 230b2 is RF2, the master device 210 ２ After the replacement work, the new high frequency power supply connected to the location can be recognized as a high frequency power supply with an ID of RF2. ２ If the ID of the mass flow controller 231 in the slave device group 230a is MFC2, the master device 210 ２The new mass flow controller after the replacement work connected to the location is the mass flow controller 231 with ID MFC2. ２ It is possible to recognize it as being.

[0099] In this embodiment, an ID is individually assigned to each of the component devices connected to each of the slave device groups 230b1, 230b2, 230c, and 230a, and the data and signal values ​​indicating the ID assigned to each component device are stored or held, for example, in the data storage unit 219. The data and command signals corresponding to each component generated by the packet generation unit 212 as described above are associated with the signal indicating the ID, and are identified as signals addressed to each component at the component where the packet arrives, and the operation of the component device is adjusted in accordance with the signal. Thereafter, the high frequency power supply 232 ２ After the power supply is stopped, the high frequency power supply 232 is connected to an electronic device such as a setting PC and is supplied with power separately. ２ The initial value of the operation is set.

[0100] Mass flow controller 231 ２ In the confirmation operation 504b after the replacement of the mass flow controller 231, the master device 210 checks whether the mass flow controller 231 is replaced with a predetermined gas, for example, He. ２ After the leak check is performed again, the mass flow controller 231 ２ Next, the zero point of the target mass flow controller 231 is set on a display (not shown) connected to the control unit 170. ２ The mass flow controller 231 ２ The values ​​monitored for operation are checked and, in particular, the flow rate values ​​are recorded.

[0101] Then, the mass flow controller 231 in the integrated gas box 181 １ ~231 ｎ The supply of gas to each mass flow controller 231 １ ~231 ｎ The data including the flow rate value transmitted from the replaced mass flow controller 231 is displayed on the display.２ The value is checked to detect whether there is an abnormality.

[0102] Next, the high frequency power supply 232 ２ In this step, the conversion table is created 505 for the new high frequency power supply 232 that has been replaced and installed. ２ The master device 210 controls the high frequency power supply 232 so that the difference between the set value of the output of this power supply and the actual output value is within a predetermined tolerance range. ２ The output of

[0103] First, the high frequency power supply 232 ２ When the power supply to the high frequency power supply 232 is stopped, ２ A power meter is separately connected to the high frequency power source 232 ２ The input / output values ​​of the power meter are set corresponding to the reference outputs according to a plurality of operation modes including the high output and low output states. ２ Power is supplied to the high frequency power source 232 ２ The output value of the high frequency power supply 232 is set to be the same as the output value of the power meter. ２ The high frequency power source 232 included in the EtherCAT signal returned from ２ If the difference between the monitor value of the output shown on the display and the output value indicated on the power meter is greater than a threshold value, the output of the high frequency power supply 232b is adjusted so that the value falls within the allowable range.

[0104] After the above adjustment is completed, the high frequency power supply 232 ２ The power meter is removed with power supply from the

[0105] Next, the plasma processing apparatus 100 is shifted to a trial operation mode (AUTO / Standby Mode) by the master device 210. In this state, plasma is generated within the vacuum chamber 101 under predetermined processing conditions, and processing is performed. Discharge characteristics such as the plasma discharge and plasma density while the plasma is generated during the processing are detected, and it is determined whether these satisfy a predetermined tolerance range and a determination criterion. If it is determined that the conditions are satisfied, the replacement work is completed.

[0106] When performing maintenance work on components belonging to the slave device groups 230b1, 230b2, 230c, and 230a in the steps shown in FIG. 4, the high frequency power source 232 is used for a plurality of consecutive steps, from pre-replacement work 502a and 502b including advance preparation 501 to post-replacement confirmation work 504a and 504b and conversion table creation step 505 for the high frequency power source 232. １ ~232 ｍ and mass flow controller 231 １ ~231 ｎ Work on these items can be done in parallel.

[0107] (Configuration of Comparative Example) Fig. 5 is a block diagram showing an example of a control unit of a plasma processing apparatus and components connected thereto as a comparative example to Fig. 3. In Fig. 5, the control unit 170a of the plasma processing apparatus includes a high frequency power supply 232 １ ~232 ｍ are connected in a daisy chain in this order. ｍ A high frequency power supply 232 is provided downstream of the １ ~232 ｍ A plurality of high frequency power matching units 233 corresponding to each of the １ ~233 ｍ and a high frequency mixer 234 are connected in a daisy chain in this order.

[0108] Similarly, a microwave power supply 235 and a microwave power supply matching box 236 for generating plasma in the plasma processing apparatus 100, and a mass flow controller 231 downstream thereof are provided. １ , mass flow controller 231 ２ , mass flow controller 231３ Mass flow controller 231 ｎ In this way, in the comparative example of FIG. １ and 232 ２ A single slave device group 402 is configured by connecting a plurality of components, including the above, in a daisy chain, and connecting the components to each other and the control unit 170a so that they can communicate with each other.

[0109] (Replacement Work in Comparative Example) In the comparative example, the high frequency power supply 232 １ ~232 ｍ and a high frequency power matching box 233 １ ~233 ｍ , microwave power supply 235, microwave power supply matching box 236, to mass flow controller 231 １ ~231 ｎ are connected to each other in a daisy chain as a slave device group. ２ and mass flow controller 231 ２ When carrying out the replacement work, at least the pre-replacement work steps 502a and 502b cannot be carried out in parallel, and one must be carried out in order before the other.

[0110] For example, the mass flow controller 231 ２ After the pre-replacement work 502b is performed, the high frequency power supply 232 ２ When the pre-replacement work 502a is performed, the replacement work 503b and the pre-replacement work 502a can be performed in parallel. ２ The steps of replacement work 503a, confirmation work after replacement 504a, and conversion table creation 505 are carried out by the mass flow controller 231. ２ This makes it difficult to carry out the confirmation work 504b after the replacement of the high frequency power supply 232 in parallel with each step of the subsequent work. ２ The pre-exchange work 502a for the ion exchange and each subsequent process up to the conversion table creation 505 are performed by the high frequency power source 232. ２This is because the operation is performed by turning off the power supply to the high frequency power supply 232, which is a slave device group connected to the master device 210. ２ A mass flow controller 231, which is a component device connected further downstream ２ After replacing the mass flow controller 231 ２ The operation using the communication on EtherCAT, such as checking the value of data from the high frequency power source 232, ２ This cannot be done unless power is supplied to the

[0111] In the comparative example, the mass flow controller 231 is connected to the master device 210 in the slave device group 402. ２ A high frequency power supply 232 is provided downstream of the ２ The same applies to the case where a series of high frequency power supplies including the above are connected. Even if replacement operations 503a and 503b are performed in parallel after performing one of pre-replacement operations 502a and 502b in order, it becomes difficult to perform the subsequent steps of post-replacement confirmation operation 504a and conversion table creation 505 and post-replacement confirmation operation 504b in parallel, as in the above case.

[0112] (Operations and Effects) On the other hand, in this embodiment, as described above, the high frequency power source 232 is connected to the hub 220 connected to the master device 210 or to multiple ports of multiple hubs 220a and 220b connected in a daisy chain. １ ~232 ｍ , high frequency power matching box 233 １ ~233 ｍ Alternatively, a high frequency mixer 234, a microwave power supply 235, a microwave power supply matching box 236, and a mass flow controller 231 １ ~231 ｎEach of the slave device groups 230b1, 230b2, 230c, and 230a includes a plurality of slave device groups 230b1, 230b2, 230c, and 230a, each of which includes a plurality of component devices grouped by function. Therefore, even when maintenance work is performed on component devices belonging to more than one of the slave device groups 230b1, 230b2, 230c, and 230a, the work can be performed in parallel, shortening the work time, reducing downtime of the plasma processing apparatus 100, and improving processing efficiency.

[0113] Furthermore, even when maintenance work is performed on any one of the component devices, the component devices connected to the hub 220 on the upstream side of the slave device group to which the component device belongs can communicate with the master device 210 through the hub 220, making it possible to operate the plasma processing apparatus 100 using these upstream component devices. This makes it possible to improve the efficiency of work performed on the plasma processing apparatus 100.

[0114] [Example 2] Example 2 differs from Example 1 in that a slave device group is further connected in a daisy chain to the slave device group of Example 1. In the following description, components that are the same as or equivalent to those in Example 1 described above are given the same reference numerals, and their description will be simplified or omitted.

[0115] 6 is a block diagram illustrating an example of a control unit 170 and slave device groups connected thereto in a plasma processing apparatus according to Example 2. Slave device group 230d includes at least one element device from among the multiple components included in plasma processing apparatus 100, excluding the element devices included in slave device groups 230b1, 230b2, 230c, and 230a.

[0116] The slave device group 230d includes the component 250 １ , component 250 ２ , component 250 ３ , followed by component 250 ｐ(p is an integer equal to or greater than 1). Here, the slave device group 230d and the slave device group 230a are configured so that component work (e.g., component replacement, addition, or function adjustment or modification) is not performed in parallel. The slave device group 230d is connected to the slave device group 230a in a daisy chain fashion.

[0117] (Operations and Effects) In Example 1, the slave device groups 230b1, 230b2, 230c, and 230a were configured to enable parallel component work between each slave device group. The hub 220 had at least two ports, and a slave device group was connected to each of the two ports, enabling parallel component work within the slave device group. In contrast, in Example 2, the slave device group 230d was connected to the slave device group 230a in a daisy chain fashion, and the slave device group 230d was configured so that component work would not be performed in parallel with the slave device group 230a. This configuration allows for flexible configuration of the slave device groups, improving the degree of freedom when configuring a control network for the components included in the plasma processing apparatus 100. Furthermore, it is possible to prevent an increase in the number of ports on the hub 220 and also to address the wiring issues.

[0118] Although an example has been shown in which slave device group 230d and slave device 230a are connected in a daisy chain to one communication unit of hub 220, the present disclosure is not limited to this. Slave device group 230d may also be configured not to perform component work in parallel with any of slave device groups 230b1, 230b2, and 230c. Also, while an example has been shown in which two slave device groups, slave device group 230a and slave device group 230d, are connected in a daisy chain to one communication unit of hub 220b, two or more slave device groups may be connected in a daisy chain.

[0119] The following are some possible aspects of the present invention, but the present invention is not limited to these. (Aspect 1) A manufacturing apparatus including a plurality of element devices and a control unit that transmits data signals to the plurality of element devices, wherein the plurality of element devices are grouped according to their respective functions, and the manufacturing apparatus has one or more groups including: a first slave device group including at least one element device of the plurality of element devices; and a second slave device group including at least one element device of the plurality of element devices excluding the element devices included in the first slave device group, and the control unit transmits the data signals to the first slave device group and the second slave device group. (Aspect 2) The manufacturing apparatus according to Aspect 1, wherein the control unit includes: a master device that generates the data signals; and a hub connected to the master device and having at least a first communication unit and a second communication unit, wherein the first slave device group is connected to the first communication unit of the hub, and the second slave device group is connected to the second communication unit of the hub. (Aspect 3) The manufacturing apparatus according to Aspect 1 or 2, wherein the control unit further has a master device that generates the data signal, and a master device side communication unit that receives the data signal transmitted from the master device, wherein the first communication unit receives the data signal from the master device side communication unit and receives the data signal that has circulated through the first slave device group, and the second communication unit receives the data signal from the first communication unit and receives the data signal that has circulated through the second slave device group, and transmits the data signal to the master device side communication unit. (Aspect 4) The manufacturing apparatus according to any one of Aspects 1 to 3, wherein the control unit, the first slave device group, and the second slave device group comply with a communication method to which EtherCAT is applied.(Aspect 5) The manufacturing apparatus according to any one of Aspects 1 to 4, wherein the first slave device group and the second slave device group are composed of element devices divided by function, and the first slave device group and the second slave device group are configured to be able to perform work on the element devices in parallel. (Aspect 6) The manufacturing apparatus according to any one of Aspects 1 to 5, wherein the plurality of element devices further includes a third slave device group including at least one element device from the plurality of element devices excluding the element devices included in the first slave device group and the element devices included in the second slave device group, and the third slave device group and the first slave device group are configured so that work on the element devices is not performed in parallel, and the third slave device group is connected to the first slave device group in a daisy chain. (Aspect 7) The manufacturing apparatus according to any one of Aspects 1 to 6, wherein the first slave device group includes a plurality of high-frequency power sources, and the second slave device group includes a plurality of mass flow controllers. (Aspect 8) A method of operating the manufacturing apparatus according to any one of Aspects 1 to 7, wherein the replacement work of a predetermined high frequency power supply among the plurality of high frequency power supplies in the first slave device group includes: a first pre-replacement work of stopping the supply of power from the predetermined high frequency power supply; a first replacement work of replacing the predetermined high frequency power supply; a first post-replacement confirmation work of supplying power to the replaced high frequency power supply; and a conversion table creation process of adjusting the output of the replaced high frequency power supply; and the replacement work of a predetermined mass flow controller among the plurality of mass flow controllers in the second slave device group includes: a second pre-replacement work of performing a leak check; a replacement work of replacing the predetermined mass flow controller; and a second post-replacement confirmation work of performing a leak check on the replaced mass flow controller, and the replacement work of the predetermined high frequency power supply and the replacement work of the predetermined mass flow controller can be performed in parallel.

[0120] 100... plasma processing apparatus, 101... vacuum vessel, 102... shower plate, 102a... gas introduction hole, 103... dielectric window, 104... processing chamber, 105... waveguide, 106... electric field generation power supply, 107... magnetic field generation coil, 108... electrode substrate, 109... semiconductor wafer, 110... vacuum exhaust port, 111... conductive film, 112... ground, 113... susceptor ring, 116... plasma, 120... wafer mounting electrode, 120a... mounting surface, 120b... upper surface, 124... high frequency power supply, 125... high frequency filter, 126... DC power supply, 129... matching box, 14 0...dielectric film, 160...electric field / magnetic field generating unit, 170, 170a...control unit, 181...integrated gas box, 185...vacuum pump, 186...exhaust amount control valve, 210...master device, 212...packet generating unit, 213a to 213d...communication unit (port), 214a to 213d...transmitting unit, 215a to 215d...receiving unit, 217...datagram generating unit, 218...datagram analyzing unit, 219...data storage unit, 220, 220a, 220b...hub, 230a to 230d, 230b1, 230b2, 402...slave device group, 231 １ ~231 ｎ ...Mass flow controller (MFC), 232 １ ~232 ｍ ...High frequency power supply (RF power supply), 233 １ ~233 ｍ ...high frequency power supply matching box (RF matching box), 234...high frequency mixer (RF mixer), 235...microwave power supply, 236...microwave power supply matching box, 240...transmission line, 250 １ ~250 ｐ ...component, 1016...gas supply pipe, 1017...opening / closing valve, 1232...high frequency power supply.

Claims

1. A manufacturing apparatus including a plurality of element devices and a control unit that transmits data signals to the plurality of element devices, The plurality of element devices are grouped according to their respective functions, a first slave device group including at least one element device among the plurality of element devices; a second slave device group including at least one element device among the plurality of element devices excluding the element devices included in the first slave device group, The control unit transmits the data signal to the first slave device group and the second slave device group.

2. The manufacturing apparatus according to claim 1 , The control unit is a master device that generates the data signal; a hub connected to the master device and having at least a first communication unit and a second communication unit; the first slave device group is connected to the first communication unit of the hub; A second slave device group is connected to the second communication unit of the hub.

3. The manufacturing apparatus according to claim 2, The control unit is a master device that generates the data signal; a master device side communication unit that receives the data signal transmitted from the master device, the first communication unit receives the data signal from the master device side communication unit and receives the data signal that has circulated through the first slave device group; The second communication unit receives the data signal from the first communication unit, receives the data signal that has circulated around the second slave device group, and transmits the data signal to the master device side communication unit.

4. The manufacturing apparatus according to claim 1, The control unit, the first slave device group, and the second slave device group comply with a communication method to which EtherCAT is applied.

5. The manufacturing apparatus according to claim 1 , the first slave device group and the second slave device group are configured by element devices divided by function, The manufacturing apparatus is configured so that the first slave device group and the second slave device group can perform operations of element devices in parallel.

6. The manufacturing apparatus according to claim 1 , The plurality of element devices are a third slave device group including at least one element device among the plurality of element devices excluding the element devices included in the first slave device group and the element devices included in the second slave device group, The third slave device group and the first slave device group are configured so that operations of element devices are not performed in parallel, The third slave device group is connected to the first slave device group in a daisy chain manner.

7. The manufacturing apparatus according to claim 1 , the first slave device group includes a plurality of high frequency power sources; The second slave device group includes a plurality of mass flow controllers.

8. A method for operating the manufacturing apparatus according to claim 7, comprising the steps of: The replacement work of a predetermined high frequency power supply among the plurality of high frequency power supplies in the first slave device group is performed by a first pre-replacement operation of stopping the supply of power from the predetermined high frequency power source; a first replacement operation of replacing the predetermined high frequency power source; a first post-replacement confirmation operation of supplying power to the replaced high frequency power source; and creating a conversion table for adjusting the output of the replaced high frequency power source, The replacement work of a predetermined mass flow controller among the plurality of mass flow controllers in the second slave device group is performed by A second pre-replacement operation of performing a leak check; a second replacement operation of replacing the predetermined mass flow controller; and a second post-replacement confirmation operation of performing a leak check on the replaced mass flow controller. The operation method, wherein the replacement work of the specified high frequency power source and the replacement work of the specified mass flow controller can be performed in parallel.