Semiconductor device and vehicle

Abstract

This semiconductor device comprises first to third leads, a semiconductor element, and first and second conductive members. The first lead has a base portion. The semiconductor element has a first electrode that is mounted on one side in the thickness direction of the base portion and is disposed on one side in the thickness direction. The second lead is disposed so as to be separated from the base portion in a first direction that is orthogonal to the thickness direction. The third lead is disposed so as to be separated from the base part and the second lead. The first conductive member is joined to the first electrode and the second lead in a conductive manner. The second conductive member is joined to the first conductive member and the third lead in a conductive manner.

Description

Semiconductor device and vehicle

[0001] The present disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a plurality of leads, a semiconductor element, and a plurality of conductive members. The plurality of conductive members include a metal clip and a wire. The metal clip is bonded to an electrode formed on the upper surface of the semiconductor element and to a lead. The wire is bonded to an electrode formed on the upper surface of the semiconductor element and to another lead. In such a semiconductor device, it is required to pass a larger current.

[0003] International Publication No. 2022 / 014387

[0004] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device suitable for passing a large current.

[0005] A semiconductor device provided by a first aspect of the present disclosure comprises a first lead having a base, a semiconductor element mounted on one side of the base in a thickness direction and having a first electrode arranged on one side of the thickness direction, a second lead arranged spaced apart from the base in a first direction perpendicular to the thickness direction, a third lead arranged spaced apart from the base and the second lead, a first conductive member electrically connected to the first electrode and the second lead, and a second conductive member electrically connected to the first conductive member and the third lead.

[0006] A vehicle provided by a second aspect of the present disclosure includes a power conversion device including the semiconductor device according to the first aspect of the present disclosure.

[0007] According to the above configuration, it is possible to provide a semiconductor device with a structure that is favorable for passing a large current.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a partial perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 4. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 4. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 4. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 4. FIG. 13 is a partial enlarged view of a portion of FIG. 9. FIG. 14 is a partial enlarged view of a portion of FIG. 11. FIG. 15 is a schematic diagram of a vehicle including a semiconductor device according to a first embodiment of the present disclosure. FIG. 16 is a partial plan view showing a semiconductor device according to a first modified example of the first embodiment. FIG. 17 is a partial plan view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 18 is a partial plan view showing a semiconductor device according to a third modified example of the first embodiment. FIG. 19 is a partial plan view showing a semiconductor device according to a fourth modified example of the first embodiment. FIG. 20 is a partial plan view showing a semiconductor device according to a fifth modified example of the first embodiment. FIG. 21 is a partial plan view showing a semiconductor device according to a sixth modified example of the first embodiment. FIG. 22 is a partially enlarged cross-sectional view showing a semiconductor device according to a sixth modified example of the first embodiment, representing a cross section similar to that of FIG. 13. FIG. 23 is a partial plan view showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 24 is a partial plan view showing a semiconductor device according to a third embodiment of the present disclosure. FIG. 25 is a cross-sectional view taken along line XXV-XXV of FIG. 24. FIG. 26 is a partial plan view showing a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 27 is a cross-sectional view taken along line XXVII-XXVII of FIG. 26. FIG. 28 is a partial perspective view showing a semiconductor device according to a fifth embodiment of the present disclosure. Fig. 29 is a partial plan view showing a semiconductor device according to a fifth embodiment of the present disclosure, and Fig. 30 is a cross-sectional view taken along line XXX-XXX in Fig. 29.FIG. 31 is a partial plan view showing a semiconductor device according to a first modification of the fifth embodiment.

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 14 show a semiconductor device according to a first embodiment of the present disclosure. The application of the semiconductor device A10 according to this embodiment is not limited in any way, and it may be used in electronic devices equipped with a power conversion circuit, such as a DC-DC converter. The semiconductor device A10 includes a first lead 11, a second lead 12, a third lead 13, a fourth lead 14, a semiconductor element 20, a first conductive member 30, a second conductive member 40, a third conductive member 50, and a sealing resin 60.

[0014] FIG. 1 is a perspective view showing the semiconductor device A10. FIG. 2 is a partial perspective view showing the semiconductor device A10. FIG. 3 is a plan view showing the semiconductor device A10. FIG. 4 is a partial plan view showing the semiconductor device A10. In FIGS. 2 and 4, the outline of the sealing resin 60 is indicated by an imaginary line (two-dot chain line). FIG. 5 is a bottom view showing the semiconductor device A10. FIG. 6 is a side view showing the semiconductor device A10. FIG. 7 is a front view showing the semiconductor device A10. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 4. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 4. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 4. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 4. FIG. 13 is a partial enlarged view of a portion of FIG. 9. FIG. 14 is a partial enlarged view of a portion of FIG. 11.

[0015] In these figures, three mutually orthogonal directions will be referred to as appropriate. As an example, the thickness direction of the semiconductor device A10 (the vertical direction in FIG. 1 ) will be referred to as the "thickness direction z." One direction orthogonal to the thickness direction z will be referred to as the "first direction x." A direction orthogonal to both the thickness direction z and the first direction x will be referred to as the "second direction y."

[0016] 1 to 5 and 7 to 11, the first lead 11 has a base portion 111 and a terminal portion 112. The first lead 11 is a conductive member on which the semiconductor element 20 is mounted and which forms part of a conductive path between the semiconductor element 20 and a wiring board (not shown) or the like on which the semiconductor device A10 is mounted.

[0017] The first lead 11 includes, for example, copper (Cu) or a copper alloy. The first lead 11 may have a surface metal layer (not shown). The surface metal layer includes, for example, Ag (silver), Ni (nickel), or the like.

[0018] The base 111 has a first main surface 111A, a first back surface 111B, and a through hole 111C. The first main surface 111A faces the z1 side in the thickness direction z. The first back surface 111B faces the z2 side in the z direction. The through hole 111C penetrates the base 111 in the thickness direction z. The shape of the through hole 111C is not limited in any way, and in the illustrated example, it is circular when viewed in the thickness direction z.

[0019] The terminal portion 112 is connected to the base portion 111 and includes a portion extending toward the x1 side in the first direction x. The base portion 111 and the terminal portion 112 are electrically connected to each other. A portion of the terminal portion 112 is covered with the sealing resin 60. The portion of the terminal portion 112 covered with the sealing resin 60 is bent when viewed in the second direction y. The surface of the portion of the terminal portion 112 exposed from the sealing resin 60 may be plated with, for example, tin (Sn).

[0020] As shown in FIGS. 1 to 5 , 7 , and 9 , the second lead 12 is spaced apart from the first lead 11 and is disposed on the y2 side in the second direction y relative to the terminal portion 112 of the first lead 11. The second lead 12 is disposed on the x1 side in the first direction x relative to the base portion 111 of the first lead 11. The second lead 12 is electrically connected to the semiconductor element 20 via the first conductive member 30. The second lead 12 has a pad portion 121 and a terminal portion 122. The pad portion 121 is covered with a sealing resin 60. The pad portion 121 may be plated with, for example, silver (Ag) or tin (Sn). The terminal portion 122 is connected to the pad portion 121. A portion of the terminal portion 122 is covered with the sealing resin 60, and another portion is exposed from the sealing resin 60. The terminal portion 122 extends, for example, parallel to the terminal portion 112 in the first direction x. The surface of the terminal portion 122 may be plated with, for example, tin (Sn).

[0021] As shown in FIGS. 1 to 5 , 7 , and 10 , the third lead 13 is spaced apart from the first lead 11 and the second lead 12 and is disposed on the y2 side in the second direction y relative to the second lead 12. The third lead 13 is adjacent to the second lead 12 in the second direction y. The third lead 13 is disposed on the x1 side in the first direction x relative to the base 111. The third lead 13 is electrically connected to the semiconductor element 20 via the second conductive member 40 and the first conductive member 30. The third lead 13 has a pad portion 131 and a terminal portion 132. The pad portion 131 is covered with a sealing resin 60. The pad portion 131 may be plated with, for example, silver (Ag) or tin (Sn). The terminal portion 132 is connected to the pad portion 131. A portion of the terminal portion 132 is covered with the sealing resin 60, and another portion is exposed from the sealing resin 60. The terminal portion 132 extends in the first direction x, for example, parallel to the terminal portion 112 and the terminal portion 122. The surface of the terminal portion 132 may be plated with, for example, tin (Sn).

[0022] As shown in FIGS. 1 to 5 , 7 , and 11 , the fourth lead 14 is spaced apart from the first lead 11, the second lead 12, and the third lead 13, and is spaced apart from the third lead 13 on the y2 side in the second direction y. The fourth lead 14 is located on the opposite side of the second lead 12 from the third lead 13 in the second direction y. The fourth lead 14 is spaced apart from the base 111 on the x1 side in the first direction x. The fourth lead 14 is electrically connected to the semiconductor element 20 via the third conductive member 50. The fourth lead 14 has a pad portion 141 and a terminal portion 142. The pad portion 141 is covered with a sealing resin 60. The pad portion 141 may be plated with, for example, silver (Ag) or tin (Sn). The terminal portion 142 is connected to the pad portion 141. A portion of the terminal portion 142 is covered with the sealing resin 60, and another portion is exposed from the sealing resin 60. The terminal portion 142 extends in the first direction x, for example, parallel to the terminal portion 112, the terminal portion 122, and the terminal portion 132. The surface of the terminal portion 142 may be plated with, for example, tin (Sn).

[0023] As shown in FIGS. 2, 4, and 9 to 14, the semiconductor element 20 is mounted on the first main surface 111A of the base 111. In the semiconductor device A10, the specific configuration of the semiconductor element 20 is not limited in any way. In this embodiment, the semiconductor element 20 is a switching element, such as an n-channel, vertical-structure metal-oxide-semiconductor field-effect transistor (MOSFET). The semiconductor element 20 is not limited to a MOSFET. The semiconductor element 20 may be another transistor, such as an insulated gate bipolar transistor (IGBT). Furthermore, the semiconductor element 20 may be a large-scale integrated circuit (LSI) or a diode. The semiconductor element 20 is rectangular when viewed in the thickness direction z. The semiconductor element 20 is disposed at the center of the base 111 in the second direction y.

[0024] The semiconductor element 20 has a semiconductor layer 25, a first electrode 21, a second electrode 22, and a third electrode 23. The thickness of the semiconductor element 20 (dimension in the thickness direction z) is, for example, not less than 100 μm and not more than 1000 μm.

[0025] The semiconductor layer 25 includes a compound semiconductor substrate. The main material of the compound semiconductor substrate is silicon carbide (SiC). Alternatively, silicon (Si) may be used as the main material of the compound semiconductor substrate.

[0026] The first electrode 21 is disposed on a portion of the semiconductor layer 25 on the z1 side in the thickness direction z. A current corresponding to the power converted by the semiconductor element 20 flows through the first electrode 21. In this embodiment, the first electrode 21 is a source electrode.

[0027] The second electrode 22 is disposed in a portion of the semiconductor layer 25 on the z1 side in the thickness direction z. The second electrode 22 is located away from the first electrode 21. A voltage for driving the semiconductor element 20 is applied to the second electrode 22. In this embodiment, the second electrode 22 is a gate electrode. As viewed in the thickness direction z, the area of ​​the second electrode 22 is smaller than the area of ​​the first electrode 21. In the illustrated example, as viewed in the thickness direction z, the second electrode 22 is disposed near a corner of the semiconductor element 20 on the x1 side in the first direction x and on the y2 side in the second direction y.

[0028] The third electrode 23 is disposed on a portion of the semiconductor layer 25 on the z2 side in the thickness direction z. The third electrode 23 faces the first main surface 111A of the base 111 of the first lead 11. A current corresponding to the power before being converted by the semiconductor element 20 flows through the third electrode 23. In this embodiment, the third electrode 23 is a drain electrode. The third electrode 23 is conductively joined to the first main surface 111A via a bonding layer 29. The bonding layer 29 is made of a conductive material, such as solder or Ag (silver) paste.

[0029] The first lead 11 is electrically connected to the third electrode 23 of the semiconductor element 20. The terminal portion 112 is the drain terminal of the semiconductor device A10. The second lead 12 is electrically connected to the first electrode 21 of the semiconductor element 20. The terminal portion 122 is the source terminal of the semiconductor device A10. The third lead 13 is electrically connected to the first electrode 21 of the semiconductor element 20. The terminal portion 132 is the source sense terminal of the semiconductor device A10. The fourth lead 14 is electrically connected to the second electrode 22 of the semiconductor element 20. The terminal portion 142 is the gate terminal of the semiconductor device A10.

[0030] As shown in FIGS. 4 , 9 , and 13 , the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the pad portion 121 of the second lead 12. The first conductive member 30 is made of, for example, a metal plate material. The constituent material of the first conductive member 30 includes, for example, Cu (copper). The first conductive member 30 is an appropriately bent metal plate material. In the illustrated example, the first conductive member 30 is a fixed-length Cu clip (metal clip). The first conductive member 30 extends with the first direction x as its longitudinal direction.

[0031] The first conductive member 30 has a first portion 31 , a second portion 32 and a first intermediate portion 33 .

[0032] The first portion 31 is joined to the first electrode 21 via a joining layer 39, and is a portion that electrically connects the first conductive member 30 to the first electrode 21. The joining layer 39 is made of a conductive material, such as solder or Ag (silver) paste. In the illustrated example, the first portion 31 is located at the end of the first conductive member 30 on the x2 side in the first direction x.

[0033] The second portion 32 is joined to the pad portion 121 of the second lead 12 via a joining layer 39, and is a portion that electrically connects the first conductive member 30 to the second lead 12. The joining layer 39 is made of a conductive material, such as solder or Ag (silver) paste. In the illustrated example, the second portion 32 is located at the end of the first conductive member 30 on the x1 side in the first direction x.

[0034] The first intermediate portion 33 is located between the first portion 31 and the second portion 32 when viewed in the thickness direction z. The first intermediate portion 33 is connected to both the first portion 31 and the second portion 32. The portions of the first intermediate portion 33 that are connected to the first portion 31 and the second portion 32 are bent when viewed in the second direction y. The portions of the first intermediate portion 33 other than the bent portions are along the xy plane and are located on the z1 side in the thickness direction z relative to the first portion 31 and the second portion 32.

[0035] As shown in FIGS. 2 , 4 , and 10 , the second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is made of, for example, a metal plate. The constituent material of the second conductive member 40 includes, for example, Cu (copper). The second conductive member 40 is an appropriately bent metal plate. In this embodiment, the second conductive member 40 has a third portion 41, a fourth portion 42, and a second intermediate portion 43.

[0036] The third portion 41 is joined to the first portion 31 of the first conductive member 30 via a joining layer 49. The joining layer 49 is made of a conductive material, such as solder or Ag (silver) paste. The third portion 41 is electrically connected to the first electrode 21 of the semiconductor element 20 via the first conductive member 30 (first portion 31). In the illustrated example, the third portion 41 is located at the end of the second conductive member 40 on the x2 side in the first direction x.

[0037] The fourth portion 42 is joined to the pad portion 131 of the third lead 13 via a joining layer 49, and is a portion that electrically connects the second conductive member 40 to the third lead 13. The joining layer 49 is made of a conductive material, such as solder or Ag (silver) paste. In the illustrated example, the fourth portion 42 is located at the end of the second conductive member 40 on the x1 side in the first direction x.

[0038] The second intermediate portion 43 is located between the third portion 41 and the fourth portion 42 when viewed in the thickness direction z. The second intermediate portion 43 is connected to both the third portion 41 and the fourth portion 42. The portions of the second intermediate portion 43 that are connected to the third portion 41 and the fourth portion 42 are bent when viewed in the second direction y. The portions of the second intermediate portion 43 other than the bent portions are along the xy plane and are located on the z1 side in the thickness direction z relative to the third portion 41 and the fourth portion 42. The portions of the second intermediate portion 43 other than the bent portions are located on the y2 side in the second direction y as they move toward the x1 side in the first direction x, and extend in a direction intersecting both the first direction x and the second direction y.

[0039] As can be seen from FIGS. 2, 4, 12, etc., the cross-sectional area of ​​the current path of the second conductive member 40 is smaller than the cross-sectional area of ​​the current path of the first conductive member 30.

[0040] As shown in FIGS. 2 , 4 , and 10 , the third conductive member 50 is conductively joined to the second electrode 22 of the semiconductor element 20 and the pad portion 141 of the fourth lead 14. In this embodiment, the third conductive member 50 is a bonding wire. The specific configuration of the third conductive member 50 is not limited in any way, and includes configurations in which the cross-sectional shape is circular, elliptical, flattened rectangular, etc. In the illustrated example, the third conductive member 50 has a circular cross-sectional shape. The third conductive member 50 is joined by, for example, wedge bonding. The material of the third conductive member 50 is not limited in any way, and includes, for example, Cu (copper), Al (aluminum), etc.

[0041] The bonding of the semiconductor element 20 to the base 111 via the bonding layer 29, the bonding of the first conductive member 30 to the first electrode 21 and the second lead 12 (pad portion 121) via the bonding layer 39, and the bonding of the second conductive member 40 to the first conductive member 30 (first portion 31) and the third lead 13 (pad portion 131) via the bonding layer 49 are performed all at once by, for example, a solder reflow process. Then, after the first conductive member 30 and the second conductive member 40 are bonded, the third conductive member 50 is bonded.

[0042] As shown in FIGS. 1 to 12 , the sealing resin 60 covers the semiconductor element 20, the first conductive member 30, the second conductive member 40, the third conductive member 50, and portions of the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14. The sealing resin 60 has electrical insulation properties. The sealing resin 60 is made of a material containing, for example, black epoxy resin. The sealing resin 60 has a resin main surface 61, a resin back surface 62, a pair of first resin side surfaces 63, a pair of second resin side surfaces 64, a pair of openings 65, a mounting hole 66, and a recess 67.

[0043] The resin main surface 61 faces the z1 side in the thickness direction z. The resin back surface 62 faces the z2 side in the thickness direction z. A first back surface 111B of the base 111 is exposed from the resin back surface 62. The first back surface 111B and the resin back surface 62 are flush with each other.

[0044] The pair of first resin side surfaces 63 are spaced apart from each other in the first direction x. The pair of first resin side surfaces 63 are connected to the resin main surface 61 and the resin back surface 62. The terminal portion 112 of the first lead 11, the terminal portion 122 of the second lead 12, the terminal portion 132 of the third lead 13, and the terminal portion 142 of the fourth lead 14 protrude from the first resin side surface 63 facing the x1 side in the first direction x.

[0045] The pair of second resin side surfaces 64 are spaced apart from each other in the second direction y. The pair of second resin side surfaces 64 are connected to the resin main surface 61 and the resin back surface 62.

[0046] The pair of openings 65 are positioned apart from each other in the second direction y. Each of the pair of openings 65 is recessed inward into the sealing resin 60 from the resin main surface 61 and one of the pair of second resin side surfaces 64. A portion of the first main surface 111A of the base 111 of the first lead 11 is exposed from the pair of openings 65.

[0047] The mounting hole 66 penetrates the sealing resin 60 from the resin main surface 61 to the resin back surface 62 in the thickness direction z. When viewed in the thickness direction z, the mounting hole 66 is contained within the through hole 111C of the base 111 of the first lead 11. The inner circumferential surface of the base 111 that defines the through hole 111C is covered with the sealing resin 60. As a result, when viewed in the thickness direction z, the maximum dimension of the mounting hole 66 is smaller than the dimension of the through hole 111C.

[0048] The recess 67 is located between the terminal portion 112 and the terminal portion 122 in the second direction y. The recess 67 is recessed from the first resin side surface 63 located on the x1 side in the first direction x to the x2 side in the first direction x.

[0049] Next, an example of use of the semiconductor device A10 will be described with reference to Fig. 15. Fig. 15 is a schematic diagram of a vehicle B1 equipped with the semiconductor device A10. The vehicle B1 is, for example, an electric vehicle (EV).

[0050] As shown in FIG. 15 , vehicle B1 includes a drive system 84 including an AC-DC converter 81, a power receiving device 82, and a storage battery 83. The semiconductor device A10 constitutes part of the AC-DC converter 81. When vehicle B1 receives AC power from a charging facility 80, which is an AC power source installed outdoors or elsewhere, the AC-DC converter 81 converts the AC power into high-voltage DC power. The AC-DC converter 81 supplies the high-voltage DC power to a storage battery 83. The power receiving device 82 supplies power to the storage battery 83 via a contactless charging system, and power is supplied by electromagnetic induction from a contactless charger (not shown) installed in a parking lot or elsewhere. The power stored in the storage battery 83 is supplied to a drive system 84 including an inverter, an AC motor, and a transmission. The drive system 84 drives vehicle B1. The AC-DC converter 81 is an example of a "power conversion device."

[0051] Next, the operation of the semiconductor device A10 will be described.

[0052] In the semiconductor device A10, the second lead 12 is disposed on the x1 side in the first direction x, away from the base 111 on which the semiconductor element 20 is mounted. The third lead 13 is disposed away from the base 111 and the second lead 12. The first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is conductively connected to the first electrode 21 via the first conductive member 30. With this configuration, compared to a configuration in which, for example, one end of a wire is bonded to the third lead 13 and the other end is bonded to the first electrode 21, there is no need to provide space for bonding the wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be larger. This allows the semiconductor device A10 to pass a larger current.

[0053] The first conductive member 30 has a first portion 31, a second portion 32, and a first intermediate portion 33. The first portion 31 is conductively joined to the first electrode 21 of the semiconductor element 20, and the second conductive member 40 is conductively joined to this first portion 31. With this configuration, the portion of the second conductive member 40 joined to the first conductive member 30 is close to the first electrode 21. This makes it possible to suppress deterioration in the characteristics of the second conductive member 40 that is conductive to the terminal portion 132 (third lead 13), which is the source sense terminal.

[0054] The first conductive member 30 and the second conductive member 40 are each made of a metal plate. With this configuration, the first conductive member 30 can be joined to the first electrode 21 and the second lead 12 (pad portion 121), and the second conductive member 40 can be joined to the first conductive member 30 (first portion 31) and the third lead 13 (pad portion 131) all at once, for example, by solder reflow processing. This allows the semiconductor device A10 to be manufactured efficiently.

[0055] The third lead 13 is arranged spaced apart from the second lead 12 in a second direction y that is perpendicular to both the thickness direction z and the first direction x. The third lead 13 is arranged adjacent to the second lead 12 in the second direction y. In this configuration, the direction in which the first conductive member 30 extends (the first direction x in the illustrated example) and the direction in which the second conductive member 40 extends are relatively close to each other. This allows the first conductive member 30 and the second conductive member 40 to be efficiently arranged relative to the second lead 12 and the third lead 13 that are adjacent to each other in the second direction y.

[0056] 16 to 31 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals as those in the above-described embodiment, and redundant explanations will be omitted. The configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate to the extent that no technical contradictions arise.

[0057] First Modification of First Embodiment: Fig. 16 shows a first modification of the semiconductor device A10. Fig. 16 is a partial plan view showing a semiconductor device A11 according to the first modification. In Fig. 16, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). The semiconductor device A11 of this modification differs from the semiconductor device A10 in the configuration of the first conductive member 30.

[0058] In this modification, the first portion 31 of the first conductive member 30 is L-shaped when viewed in the thickness direction z. When viewed in the thickness direction z, the area of ​​this first portion 31 is larger than the area of ​​the first portion 31 in the semiconductor device A10 shown in FIG. 4 . The first portion 31 is also provided on the x2 side of the second electrode 22 in the first direction x when viewed in the thickness direction z, and overlaps with a large portion of the first electrode 21 when viewed in the thickness direction z. In this modification, the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is conductively connected to the first electrode 21 via the first conductive member 30. Even in this modification, there is no need to provide a space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be increased, and the semiconductor device A11 can pass a larger current. In addition, the semiconductor device A11 has the same effects as the semiconductor device A10 of the above embodiment.

[0059] Second Modification of First Embodiment: Figure 17 shows a second modification of the semiconductor device A10. Figure 17 is a partial plan view showing a semiconductor device A12 according to the second modification. In Figure 17, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). In the semiconductor device A12 of this modification, the configurations of the semiconductor element 20 and the first conductive member 30 are different from those of the semiconductor device A10.

[0060] In this modification, the arrangement of the second electrode 22 on the semiconductor element 20 differs from that of the semiconductor device A10. The second electrode 22 is disposed on the y2 side of the second direction y and at the center in the first direction x as viewed in the thickness direction z. The first portion 31 of the first conductive member 30 is U-shaped as viewed in the thickness direction z. The first portion 31 is also provided on both sides of the second electrode 22 in the first direction x as viewed in the thickness direction z, and overlaps most of the first electrode 21 as viewed in the thickness direction z. In this modification, the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is conductively connected to the first electrode 21 via the first conductive member 30. In this modification, there is also no need to provide a space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be increased, and the semiconductor device A12 can pass a larger current. In addition, the semiconductor device A12 has the same effects as the semiconductor device A10 of the above embodiment.

[0061] Third Modification of First Embodiment: Figure 18 shows a third modification of the semiconductor device A10. Figure 18 is a partial plan view showing a semiconductor device A13 according to the third modification. In Figure 18, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). In the semiconductor device A13 of this modification, the arrangement of the semiconductor element 20 and the configuration of the first conductive member 30 differ from those of the semiconductor device A10.

[0062] In this modified example, the semiconductor element 20 is mounted on the y2 side of the base 111 in the second direction y. The first conductive member 30 is L-shaped when viewed in the thickness direction z. The first portion 31 of the first conductive member 30 is bent when viewed in the thickness direction z, and has a shape in which a portion extending in the first direction x and a portion extending in the second direction y are connected. The first portion 31 is connected to an end of the first intermediate portion 33 on the y2 side in the second direction y, and the second portion 32 is connected to an end of the first intermediate portion 33 on the x1 side in the first direction x. In this modified example, the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is electrically connected to the first electrode 21 via the first conductive member 30. In this modification, there is also no need to provide a space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be increased, and the semiconductor device A13 can pass a larger current. In addition, the semiconductor device A13 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.

[0063] Fourth Modification of First Embodiment: Fig. 19 shows a fourth modification of the semiconductor device A10. Fig. 19 is a partial plan view showing a semiconductor device A14 according to the fourth modification. In Fig. 19, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). In the semiconductor device A14 of this modification, the arrangement of the third lead 13 and the fourth lead 14 differs from that of the semiconductor device A10.

[0064] In this modification, the third lead 13 and the fourth lead 14 are arranged in a swapped position compared to the semiconductor device A10. The third lead 13 is located on the y2 side in the second direction y with respect to all of the first lead 11, the second lead 12, and the fourth lead 14. The fourth lead 14 is arranged between the second lead 12 and the fourth lead 14 in the second direction y and is adjacent to both the second lead 12 and the third lead 13. In this modification, as the positions of the third lead 13 and the fourth lead 14 are swapped, the second conductive member 40 joined to the third lead 13 and the third conductive member 50 joined to the fourth lead 14 intersect with each other as viewed in the thickness direction z. The third conductive member 50 straddles the second intermediate portion 43 of the second conductive member 40 as viewed in the thickness direction z.

[0065] In this modification, the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is electrically connected to the first electrode 21 via the first conductive member 30. In this modification, there is also no need to provide space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be increased, and the semiconductor device A14 can pass a larger current. In addition, the semiconductor device A14 achieves the same effects as the semiconductor device A10 within the same configuration as the semiconductor device A10 of the above embodiment.

[0066] Fifth Modification of First Embodiment: Figure 20 shows a fifth modification of the semiconductor device A10. Figure 20 is a partial plan view showing a semiconductor device A15 according to the fifth modification. In Figure 20, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). The semiconductor device A15 of this modification differs from the semiconductor device A10 in the location where the second conductive member 40 is joined to the first conductive member 30.

[0067] In this modification, the second conductive member 40 (third portion 41) is conductively joined to the first intermediate portion 33 of the first conductive member 30. The second conductive member 40 is electrically connected to the first electrode 21 of the semiconductor element 20 via the first conductive member 30 (first intermediate portion 33 and first portion 31). In this modification, there is also no need to provide space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be increased, and the semiconductor device A15 can pass a larger current. In addition, the semiconductor device A15 achieves the same effects as the semiconductor device A10 within the same configuration as the semiconductor device A10 of the above embodiment.

[0068] Sixth Modification of First Embodiment: Figures 21 and 22 show a sixth modification of the semiconductor device A10. Figure 21 is a partial plan view showing a semiconductor device A16 according to the sixth modification. Figure 22 is a partially enlarged cross-sectional view showing the semiconductor device A16, showing the same cross-section as Figure 13. In Figure 21, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). The semiconductor device A16 of this modification differs from the semiconductor device A10 in the configuration of the first portion 31 of the first conductive member 30.

[0069] 22 , the first portion 31 has a first surface 311 and a first recess 312. The first surface 311 faces the z1 side in the thickness direction z. The first recess 312 is recessed from the first surface 311 toward the z2 side in the thickness direction z. At least a portion of the third portion 41 of the second conductive member 40 is disposed in the first recess 312.

[0070] In this modification, the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is conductively joined to the first electrode 21 via the first conductive member 30 (first portion 31). This modification also eliminates the need to provide space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be increased, enabling the semiconductor device A16 to pass a larger current. At least a portion of the third portion 41 is disposed in the first recess 312 of the first portion 31. This positions the bonding location of the second conductive member 40 relative to the first conductive member 30, improving the reliability of the bonding between the first conductive member 30 and the second conductive member 40. In addition, the semiconductor device A16 has the same effects as the semiconductor device A10 of the above embodiment.

[0071] Second Embodiment: Figure 23 shows a semiconductor device according to a second embodiment of the present disclosure. Figure 23 is a partial plan view showing a semiconductor device A20 according to this embodiment. In Figure 23, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). The semiconductor device A20 of this embodiment differs from the semiconductor device A10 in the sizes of the semiconductor element 20, first conductive member 30, and second conductive member 40.

[0072] In this embodiment, the sizes of the semiconductor element 20 and the first conductive member 30 as viewed in the thickness direction z are significantly larger than those of the semiconductor device A10. The size of the second conductive member 40 as viewed in the thickness direction z is also larger than that of the semiconductor device A10. In the semiconductor element 20, the second electrode 22 is disposed near a corner on the x1 side in the first direction x and the y2 side in the second direction y as viewed in the thickness direction z. The first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is conductively connected to the first electrode 21 via the first conductive member 30. In this embodiment, too, there is no need to provide space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be larger, allowing the semiconductor element 20 to pass a larger current. In addition, the semiconductor device A20 has the same effects as the semiconductor device A10 of the above embodiment.

[0073] Third Embodiment: Figures 24 and 25 show a semiconductor device according to a third embodiment of the present disclosure. Figure 24 is a partial plan view showing a semiconductor device A30 according to this embodiment. Figure 25 is a cross-sectional view taken along line XXV-XXV in Figure 24. In Figure 24, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). The semiconductor device A30 of this embodiment differs from the semiconductor device A10 in the specific configurations of the first lead 11, second lead 12, third lead 13, and fourth lead 14, and accordingly, other elements have also been appropriately changed.

[0074] In the first lead 11, the terminal portion 112 is connected to the base portion 111 and is disposed on the x2 side of the base portion 111 in the first direction x. The terminal portion 112 is elongated in the second direction y. As shown in FIG. 23 , the terminal portion 112 is electrically connected to the third electrode 23 (drain electrode) of the semiconductor element 20 via the base portion 111 and the bonding layer 29. The terminal portion 112 is a drain terminal of the semiconductor device A30.

[0075] As shown in FIGS. 24 and 25 , the second lead 12 is spaced from the first lead 11 and is disposed on the x1 side of the base 111 of the first lead 11 in the first direction x. The second lead 12 is electrically connected to the semiconductor element 20 via the first conductive member 30. The second lead 12 has a pad 121 and multiple (five in the illustrated example) terminals 122. The pad 121 is elongated in the second direction y and is disposed from the center in the second direction y to the y2 side in the thickness direction z. The multiple terminals 122 are arranged at intervals in the second direction y and are each connected to the pad 121. The portion of each terminal 122 exposed from the sealing resin 60 is appropriately bent in the second direction y. The pad 121 (second lead 12) is electrically connected to the first electrode 21 (source electrode) of the semiconductor element 20 via the first conductive member 30 and the bonding layer 39. The multiple terminal portions 122 are source terminals of the semiconductor device A30.

[0076] The third lead 13 is spaced apart from the first lead 11 and the second lead 12 and is disposed on the y1 side in the second direction y relative to the second lead 12. The third lead 13 is adjacent to the second lead 12 in the second direction y. The third lead 13 is disposed on the x1 side in the first direction x relative to the base 111. The third lead 13 is electrically connected to the first electrode 21 (source electrode) of the semiconductor element 20 via the second conductive member 40 and the first conductive member 30. The terminal portion 132 is a source sense terminal of the semiconductor device A30.

[0077] The fourth lead 14 is spaced apart from the first lead 11, the second lead 12, and the third lead 13, and is disposed spaced apart on the y1 side in the second direction y with respect to the third lead 13. The fourth lead 14 is located on the opposite side of the third lead 13 from the second lead 12 in the second direction y. The fourth lead 14 is disposed spaced apart on the x1 side in the first direction x with respect to the base 111. The fourth lead 14 is electrically connected to the second electrode 22 of the semiconductor element 20 via the third conductive member 50. The terminal portion 142 is a gate terminal of the semiconductor device A30.

[0078] The first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the pad portion 121 of the second lead 12. The first conductive member 30 is made of, for example, a metal plate material. The constituent material of the first conductive member 30 includes, for example, Cu (copper). The first conductive member 30 is an appropriately bent metal plate material. In the illustrated example, the first conductive member 30 is a fixed-length Cu clip (metal clip). The first conductive member 30 extends with the first direction x as its longitudinal direction.

[0079] The first conductive member 30 has a first portion 31, a second portion 32, and a first intermediate portion 33. The first portion 31 is joined to the first electrode 21 via a bonding layer 39 and is a portion that conductively bonds the first conductive member 30 to the first electrode 21. The bonding layer 39 is, for example, solder, Ag (silver) paste, or the like. In the illustrated example, the first portion 31 is located at the end of the first conductive member 30 on the x2 side in the first direction x. The second portion 32 is joined to the pad portion 121 of the second lead 12 via the bonding layer 39 and is a portion that conductively bonds the first conductive member 30 to the second lead 12. The bonding layer 39 is, for example, solder, Ag (silver) paste, or the like. In the illustrated example, the second portion 32 is located at the end of the first conductive member 30 on the x1 side in the first direction x. The first intermediate portion 33 is located between the first portion 31 and the second portion 32 when viewed in the thickness direction z. The first intermediate portion 33 is connected to both the first portion 31 and the second portion 32. The portions of the first intermediate portion 33 that are connected to the first portion 31 and the second portion 32 are bent when viewed in the second direction y. The portions of the first intermediate portion 33 other than the bent portions are along the xy plane and are located on the z1 side in the thickness direction z relative to the first portion 31 and the second portion 32.

[0080] The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is made of, for example, a metal plate material. The constituent material of the second conductive member 40 includes, for example, Cu (copper). The second conductive member 40 is an appropriately bent metal plate material. In this embodiment, the second conductive member 40 has a third portion 41, a fourth portion 42, and a second intermediate portion 43.

[0081] The third portion 41 is joined to the first portion 31 of the first conductive member 30 via a joining layer 49. The joining layer 49 is made of a conductive material, such as solder or Ag (silver) paste. The third portion 41 is electrically connected to the first electrode 21 of the semiconductor element 20 via the first conductive member 30 (first portion 31). In the illustrated example, the third portion 41 is located at the end of the second conductive member 40 on the x2 side in the first direction x.

[0082] The fourth portion 42 is joined to the pad portion 131 of the third lead 13 via a joining layer 49, and is a portion that electrically connects the second conductive member 40 to the third lead 13. The joining layer 49 is made of a conductive material, such as solder or Ag (silver) paste. In the illustrated example, the fourth portion 42 is located at the end of the second conductive member 40 on the x1 side in the first direction x.

[0083] The second intermediate portion 43 is located between the third portion 41 and the fourth portion 42 as viewed in the thickness direction z. The second intermediate portion 43 is connected to both the third portion 41 and the fourth portion 42. The portions of the second intermediate portion 43 that are connected to the first portion 31 and the second portion 32 are bent as viewed in the second direction y. The portions of the second intermediate portion 43 other than the bent portions are along the xy plane and are located on the z1 side in the thickness direction z relative to the first portion 31 and the second portion 32. The portions of the second intermediate portion 43 other than the bent portions are located on the y1 side in the second direction y as they move toward the x1 side in the first direction x, and extend in a direction intersecting both the first direction x and the second direction y.

[0084] The third conductive member 50 is conductively joined to the second electrode 22 (gate electrode) of the semiconductor element 20 and the pad portion 141 of the fourth lead 14. In this embodiment, the second electrode 22 is disposed near a corner of the semiconductor element 20 on the x2 side in the first direction x and the y1 side in the second direction y, as viewed in the thickness direction z. In this embodiment, the third conductive member 50 is a bonding wire. The specific configuration of the third conductive member 50 is not limited in any way and includes configurations in which the cross-sectional shape is circular, elliptical, flattened rectangular, etc. In the illustrated example, the third conductive member 50 has a circular cross-sectional shape. The third conductive member 50 is joined by, for example, wedge bonding. The material of the third conductive member 50 is not limited in any way and includes, for example, Cu (copper), Al (aluminum), etc.

[0085] The bonding of the semiconductor element 20 to the base 111 via the bonding layer 29, the bonding of the first conductive member 30 to the first electrode 21 and the second lead 12 (pad portion 121) via the bonding layer 39, and the bonding of the second conductive member 40 to the first conductive member 30 (first portion 31) and the third lead 13 (pad portion 131) via the bonding layer 49 are performed all at once by, for example, a solder reflow process. Then, after the first conductive member 30 and the second conductive member 40 are bonded, the third conductive member 50 is bonded.

[0086] The sealing resin 60 has a resin main surface 61, a resin back surface 62, a pair of first resin side surfaces 63, and a pair of second resin side surfaces 64. Each of the multiple terminal portions 122 of the second lead 12, a terminal portion 132 of the third lead 13, and a terminal portion 142 of the fourth lead 14 protrude from the first resin side surface 63 facing the x1 side in the first direction x. The terminal portion 112 of the first lead 11 protrudes from the first resin side surface 63 facing the x2 side in the first direction x.

[0087] In the semiconductor device A30, the second lead 12 is disposed on the x1 side in the first direction x, away from the base 111 on which the semiconductor element 20 is mounted. The third lead 13 is disposed away from the base 111 and the second lead 12. The first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is conductively connected to the first electrode 21 via the first conductive member 30. With this configuration, there is no need to provide space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be larger, and the semiconductor device A30 can pass a larger current.

[0088] The first conductive member 30 has a first portion 31, a second portion 32, and a first intermediate portion 33. The first portion 31 is conductively joined to the first electrode 21 of the semiconductor element 20, and the second conductive member 40 is conductively joined to this first portion 31. With this configuration, the portion of the second conductive member 40 joined to the first conductive member 30 is close to the first electrode 21. This makes it possible to suppress deterioration in the characteristics of the second conductive member 40 that is conductive to the terminal portion 132 (third lead 13), which is the source sense terminal.

[0089] The third lead 13 is arranged spaced apart from the second lead 12 in a second direction y that is perpendicular to both the thickness direction z and the first direction x. The third lead 13 is arranged adjacent to the second lead 12 in the second direction y. In this configuration, the direction in which the first conductive member 30 extends (the first direction x in the illustrated example) and the direction in which the second conductive member 40 extends are relatively close to each other. This allows the first conductive member 30 and the second conductive member 40 to be efficiently arranged relative to the second lead 12 and the third lead 13 that are adjacent to each other in the second direction y.

[0090] 26 and 27 show a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 26 is a partial plan view showing a semiconductor device A40 according to this embodiment. FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG. 26. In FIG. 26, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). In the semiconductor device A40 of this embodiment, the arrangement of the second lead 12 differs from that of the semiconductor device A10, and accordingly, other elements have also been appropriately changed.

[0091] In this embodiment, the second lead 12 is arranged at a distance from the base 111 of the first lead 11 on the x2 side in the first direction x. The third lead 13 is arranged at a distance from the base 111 on the x1 side in the first direction x. The third lead 13 is arranged on the opposite side of the base 111 from the second lead 12 in the first direction x. The terminal portion 112 of the first lead 11, the terminal portion 132 of the third lead 13, and the terminal portion 142 of the fourth lead 14 protrude from a first resin side surface 63 of the sealing resin 60 facing the x1 side in the first direction x. The terminal portion 122 of the second lead 12 protrudes from a first resin side surface 63 of the sealing resin 60 facing the x2 side in the first direction x. The portions of the terminal portions 112, 122, 132, and 142 exposed from the sealing resin 60 are appropriately bent when viewed in the second direction y.

[0092] The first conductive member 30 extends with its longitudinal direction aligned in the first direction x. The first conductive member 30 has a first portion 31, a second portion 32, and a first intermediate portion 33. The first portion 31 is located at the end of the first conductive member 30 on the x1 side in the first direction x. The second portion 32 is located at the end of the first conductive member 30 on the x2 side in the first direction x. The second conductive member 40 has a third portion 41, a fourth portion 42, and a second intermediate portion 43. The third portion 41 is conductively joined to the first portion 31 of the first conductive member 30 via a bonding layer 49. The third portion 41 is located at the end of the second conductive member 40 on the x2 side in the first direction x. The fourth portion 42 is located at the end of the second conductive member 40 on the x1 side in the first direction x.

[0093] In the semiconductor device A40, the second lead 12 is disposed on the x2 side in the first direction x, away from the base 111 on which the semiconductor element 20 is mounted. The third lead 13 is disposed away from the base 111 and the second lead 12. The first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is conductively connected to the first electrode 21 via the first conductive member 30. This configuration eliminates the need to provide space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be increased, enabling the semiconductor device A40 to pass a larger current. Additionally, the semiconductor device A40 achieves the same effects as the semiconductor device A10 within the same configuration as the semiconductor device A10 of the above embodiment.

[0094] Fifth Embodiment: Figures 28 to 30 show a semiconductor device according to a fifth embodiment of the present disclosure. Figure 28 is a partial perspective view showing a semiconductor device A50 according to this embodiment. Figure 29 is a partial plan view showing the semiconductor device A50. Figure 30 is a cross-sectional view taken along line XXX-XXX in Figure 29. In Figures 28 and 29, the outline of the sealing resin 60 is indicated by an imaginary line (two-dot chain line). In the semiconductor device A40 of this embodiment, the configuration of the third conductive member 50 differs from that of the semiconductor device A10.

[0095] In the present embodiment, the third conductive member 50 is made of, for example, a metal plate. The constituent material of the third conductive member 50 includes, for example, Cu (copper). The third conductive member 50 is an appropriately bent metal plate. In the present embodiment, the third conductive member 50 has a fifth portion 51, a sixth portion 52, and a third intermediate portion 53.

[0096] The fifth portion 51 is bonded to the second electrode 22 of the semiconductor element 20 via a bonding layer 59. The bonding layer 59 is made of a conductive material, such as solder or Ag (silver) paste. In the illustrated example, the fifth portion 51 is located at the end of the third conductive member 50 on the x2 side in the first direction x.

[0097] The sixth portion 52 is joined to the pad portion 141 of the fourth lead 14 via a joining layer 59. The joining layer 59 is made of a conductive material, such as solder or Ag (silver) paste. In the illustrated example, the sixth portion 52 is located at the end of the third conductive member 50 on the x1 side in the first direction x.

[0098] The third intermediate portion 53 is located between the fifth portion 51 and the sixth portion 52 when viewed in the thickness direction z. The third intermediate portion 53 is connected to both the fifth portion 51 and the sixth portion 52. The portions of the third intermediate portion 53 that are connected to the fifth portion 51 and the sixth portion 52 are bent when viewed in the second direction y. The portions of the third intermediate portion 53 other than the bent portions are along the xy plane and are located on the z1 side in the thickness direction z relative to the fifth portion 51 and the sixth portion 52. The portions of the third intermediate portion 53 other than the bent portions are located on the y2 side in the second direction y as they move toward the x1 side in the first direction x, and extend in a direction intersecting both the first direction x and the second direction y.

[0099] The joining of the semiconductor element 20 to the base 111 via the joining layer 29, the joining of the first conductive member 30 to the first electrode 21 and the second lead 12 (pad portion 121) via the joining layer 39, the joining of the second conductive member 40 to the first conductive member 30 (first portion 31) and the third lead 13 (pad portion 131) via the joining layer 49, and the joining of the third conductive member 50 to the second electrode 22 and the fourth lead 14 (pad portion 141) via the joining layer 59 are performed all at once, for example, by a solder reflow process.

[0100] In the semiconductor device A50, the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is electrically connected to the first electrode 21 via the first conductive member 30. With this configuration, there is no need to provide space for bonding a wire to the first electrode 21 using a bonding tool. This allows the first conductive member 30 to be larger in size, and the semiconductor device A50 can pass a larger current. In the semiconductor device A50, the third conductive member 50 is made of a metal plate. This means there is no need to provide space for bonding a wire to the second electrode 22 using a bonding tool. This is suitable for increasing the size of the first conductive member 30.

[0101] The first conductive member 30, the second conductive member 40, and the third conductive member 50 are each formed of a metal plate. With this configuration, the bonding of the first conductive member 30 to the first electrode 21 and the second lead 12 (pad portion 121), the bonding of the second conductive member 40 to the first conductive member 30 (first portion 31) and the third lead 13 (pad portion 131), and the bonding of the third conductive member 50 to the second electrode 22 and the fourth lead 14 (pad portion 131) can be performed simultaneously, for example, by a solder reflow process. The semiconductor device A50 does not require wire bonding. This allows the semiconductor device A50 to be manufactured efficiently. Additionally, the semiconductor device A50 exhibits the same effects as the semiconductor device A10 of the above embodiment.

[0102] First Modification of Fifth Embodiment: Fig. 31 shows a first modification of the third conductive member 50. Fig. 31 is a partial plan view showing a semiconductor device A51 according to the first modification of the fifth embodiment. In Fig. 31, the outline of the sealing resin 60 is shown by an imaginary line (two-dot chain line). In the semiconductor device A51 of this modification, the arrangement of the third lead 13 and the fourth lead 14 differs from that of the semiconductor device A50.

[0103] In this modification, the third lead 13 and the fourth lead 14 are arranged in a swapped position compared to the semiconductor device A50. The third lead 13 is located on the y2 side in the second direction y with respect to all of the first lead 11, the second lead 12, and the fourth lead 14. The fourth lead 14 is arranged between the second lead 12 and the fourth lead 14 in the second direction y and is adjacent to both the second lead 12 and the third lead 13. In this modification, as the positions of the third lead 13 and the fourth lead 14 are swapped, the second conductive member 40 joined to the third lead 13 and the third conductive member 50 joined to the fourth lead 14 intersect with each other as viewed in the thickness direction z. The second intermediate portion 43 of the second conductive member 40 straddles the third intermediate portion 53 of the third conductive member 50 as viewed in the thickness direction z.

[0104] In this modification, the first conductive member 30 is conductively joined to the first electrode 21 of the semiconductor element 20 and the second lead 12. The second conductive member 40 is conductively joined to the first conductive member 30 and the third lead 13. The second conductive member 40 is electrically connected to the first electrode 21 via the first conductive member 30. In this modification, there is also no need to provide space for bonding a wire to the first electrode 21 using a bonding tool. This allows the size of the first conductive member 30 to be increased, and the semiconductor device A51 can pass a larger current. In addition, the semiconductor device A51 exhibits the same effects as the semiconductor device A50 of the above embodiment.

[0105] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0106] In the above embodiment, the first conductive member 30 and the second conductive member 40 are bonded by a solder reflow process, but the present disclosure is not limited to this. For example, the first conductive member 30 and the second conductive member 40 may be bonded in advance by a bonding method such as ultrasonic bonding, metal sintering bonding, or solid-state diffusion bonding, and the bonded first conductive member 30 and second conductive member 40 may then be conductively bonded to the semiconductor element 20, the second lead 12, and the third lead 13.

[0107] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a first lead having a base; a semiconductor element mounted on one side in a thickness direction of the base and having a first electrode arranged on one side in the thickness direction; a second lead arranged at a distance from the base in a first direction perpendicular to the thickness direction; a third lead arranged at a distance from the base and the second lead; a first conductive member conductively joined to the first electrode and the second lead; and a second conductive member conductively joined to the first conductive member and the third lead. Supplementary note 2. The semiconductor device described in Supplementary note 1, wherein the first conductive member has a first portion joined to the first electrode, a second portion joined to the second lead, and a first intermediate portion located between the first portion and the second portion in the thickness direction and connected to both the first portion and the second portion. Supplementary note 3. The semiconductor device described in Supplementary note 2, wherein the second conductive member is conductively joined to the first portion. Appendix 4. The semiconductor device according to any one of Appendixes 1 to 3, wherein a cross-sectional area of ​​the current path of the second conductive member is smaller than a cross-sectional area of ​​the current path of the first conductive member. Appendix 5. The semiconductor device according to any one of Appendixes 1 to 4, wherein the second conductive member has a third portion joined to the first conductive member, a fourth portion joined to the third lead, and a second intermediate portion located between the third portion and the fourth portion when viewed in the thickness direction and connected to both the third portion and the fourth portion. Appendix 6. The semiconductor device according to Appendix 5, wherein the first conductive member has a first surface facing one side in the thickness direction and a first recess recessed from the first surface to the other side in the thickness direction, and at least a portion of the third portion is disposed in the first recess. Appendix 7. The semiconductor device according to any one of Appendixes 1 to 6, wherein the first conductive member extends with the first direction as its longitudinal direction. Appendix 8. The semiconductor device according to any one of claims 1 to 7, wherein the third lead is disposed apart from the second lead in a second direction perpendicular to both the thickness direction and the first direction.Supplementary note 9: The semiconductor device according to claim 8, wherein the third lead is disposed adjacent to the second lead in the second direction.Appendix 10. The semiconductor device according to any one of Appendixes 1 to 7, wherein the third lead is arranged on the opposite side of the base from the second lead in the first direction. Appendix 11. The semiconductor device according to any one of Appendixes 1 to 9, further comprising: a fourth lead arranged on one side of the base in the first direction; and a third conductive member; the semiconductor element has a second electrode arranged on one side of the thickness direction; the fourth lead is arranged spaced apart from the third lead in a second direction orthogonal to both the thickness direction and the first direction; and the third conductive member is conductively joined to the second electrode and the fourth lead. Appendix 12. The semiconductor device according to Appendix 11, wherein the fourth lead is located on the opposite side of the third lead from the second lead in the second direction. Appendix 13. The semiconductor device according to any one of Appendixes 1 to 12, wherein the first conductive member and the second conductive member are made of metal plates. Appendix 14. The semiconductor device according to Appendix 13, wherein a constituent material of the first conductive member and a constituent material of the second conductive member include copper. Appendix 15. The semiconductor device according to Appendix 11 or 12, wherein the third conductive member is formed of a metal plate. Appendix 16. The semiconductor device according to Appendix 11 or 12, wherein the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode, the first electrode is the source electrode, the second electrode is the gate electrode, and the drain electrode is disposed on the other side of the semiconductor element in the thickness direction and is conductively joined to the base. Appendix 17. The semiconductor device according to Appendix 2, wherein the second conductive member is conductively joined to the first intermediate portion. Appendix 18. A vehicle comprising a power conversion device including the semiconductor device according to Appendix 16.

[0108] A10 to A16, A20, A30, A40, A50, A51: semiconductor device B1: vehicle 11: first lead 111: base 111A: first main surface 111B: first back surface 111C: through hole 112: terminal portion 12: second lead 121: pad portion 122: terminal portion 13: third lead 131: pad portion 132: terminal portion 14: fourth lead 141: pad portion 142: terminal portion 20: semiconductor element 21: first electrode (source electrode) 22: second electrode (gate electrode) 23: third electrode (drain electrode) 25: semiconductor layer 29: bonding layer 30: first conductive member 31: first portion 311: first surface 3 312: first recess 32: second portion 33: first intermediate portion 39: Bonding layer 40: Second conductive member 41: Third portion 42: Fourth portion 43: Second intermediate portion 49: Bonding layer 50: Third conductive member 51: Fifth portion 52: Sixth portion 53: Third intermediate portion 59: Bonding layer 60: Sealing resin 61: Resin main surface 62: Resin back surface 63: First resin side surface 64: First resin side surface 65: Opening 66: Mounting hole 67: Recess 80: Charging facility 81: AC-DC conversion device (power conversion device) 82: Power receiving device 83: Storage battery 84: Drive system

Claims

1. a first lead having a base; a semiconductor element mounted on one side of the base in a thickness direction and having a first electrode disposed on the one side in the thickness direction; a second lead disposed apart from the base in a first direction perpendicular to the thickness direction; a third lead spaced apart from the base and the second lead; a first conductive member electrically connected to the first electrode and the second lead; a second conductive member conductively joined to the first conductive member and the third lead.

2. 2. The semiconductor device according to claim 1, wherein the first conductive member has a first portion joined to the first electrode, a second portion joined to the second lead, and a first intermediate portion located between the first portion and the second portion when viewed in the thickness direction and connected to both the first portion and the second portion.

3. The semiconductor device according to claim 2 , wherein the second conductive member is conductively joined to the first portion.

4. 4. The semiconductor device according to claim 1, wherein a cross-sectional area of ​​the current path of said second conductive member is smaller than a cross-sectional area of ​​the current path of said first conductive member.

5. 4. The semiconductor device according to claim 1, wherein the second conductive member has a third portion joined to the first conductive member, a fourth portion joined to the third lead, and a second intermediate portion located between the third portion and the fourth portion when viewed in the thickness direction and connected to both the third portion and the fourth portion.

6. the first conductive member has a first surface facing one side in the thickness direction and a first recess recessed from the first surface toward the other side in the thickness direction, The semiconductor device according to claim 5 , wherein at least a part of the third portion is disposed in the first recess.

7. The semiconductor device according to claim 1 , wherein the first conductive member extends with the first direction as a longitudinal direction.

8. 4. The semiconductor device according to claim 1, wherein the third lead is disposed spaced apart from the second lead in a second direction perpendicular to both the thickness direction and the first direction.

9. 9. The semiconductor device according to claim 8, wherein the third lead is disposed adjacent to the second lead in the second direction.

10. 4. The semiconductor device according to claim 1, wherein the third lead is disposed on an opposite side of the base portion from the second lead in the first direction.

11. a fourth lead disposed on one side of the base in the first direction, and a third conductive member; the semiconductor element has a second electrode disposed on one side in the thickness direction, the fourth lead is disposed apart from the third lead in a second direction perpendicular to both the thickness direction and the first direction, 4. The semiconductor device according to claim 1, wherein the third conductive member is conductively joined to the second electrode and the fourth lead.

12. The semiconductor device according to claim 11 , wherein the fourth lead is located on an opposite side of the third lead to the second lead in the second direction.

13. The semiconductor device according to claim 1 , wherein the first conductive member and the second conductive member are made of a metal plate material.

14. The semiconductor device according to claim 13 , wherein a constituent material of the first conductive member and a constituent material of the second conductive member include copper.

15. The semiconductor device according to claim 11 , wherein the third conductive member is made of a metal plate.

16. the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode; the first electrode is the source electrode; the second electrode is the gate electrode, The semiconductor device according to claim 11 , wherein the drain electrode is disposed on the other side of the semiconductor element in the thickness direction and is conductively joined to the base portion.

17. The semiconductor device according to claim 2 , wherein the second conductive member is conductively joined to the first intermediate portion.

18. A vehicle comprising a power conversion device including the semiconductor device according to claim 16.