Spatial light modulation unit and exposure device

Abstract

The purpose of the present invention is to suppress the occurrence of stray light in an exposure device.　A spatial light modulation unit (CHP) of an exposure device comprises: a modulation unit (10) that has a plurality of mirrors arranged two-dimensionally; a spatial light modulator that includes a frame (CFL) surrounding the modulation unit, and a substrate (SB) on which the modulation unit (10) and the frame (FRM) are mounted; and a cover (CVR) that is positioned on a side of the spatial light modulator where light impinges on the modulation unit, the cover (CVR) being attached to the spatial light modulator and restricting incidence of light on the frame. The cover (CVR) has an opening (OPN1). Light impinges on the modulation unit (10) via the opening (OPN1).

Description

Spatial light modulation unit and exposure device

[0001] The present invention relates to a spatial light modulation unit and an exposure apparatus.

[0002] Conventionally, in the lithography process for manufacturing electronic devices (microdevices) such as liquid crystal or organic EL display panels and semiconductor elements (integrated circuits, etc.), a step-and-repeat projection exposure apparatus (a so-called stepper) or a step-and-scan projection exposure apparatus (a so-called scanning stepper (also called a scanner)) has been used. This type of exposure apparatus projects and exposes a mask pattern for the electronic device onto a photosensitive layer applied to the surface of an exposed substrate (hereinafter simply referred to as a substrate), such as a glass substrate, a semiconductor wafer, a printed wiring board, or a resin film.

[0003] Since it takes time and money to fabricate a mask substrate on which the mask pattern is fixedly formed, an exposure apparatus is known that uses a spatial light modulator (variable mask pattern generator) such as a digital mirror device (DMD) in which a large number of micromirrors that can be slightly displaced are regularly arranged instead of a mask substrate (see, for example, Patent Document 1). In the exposure apparatus disclosed in Patent Document 1, for example, illumination light obtained by mixing light from a laser diode (LD) with a wavelength of 375 nm and light from an LD with a wavelength of 405 nm through a multimode fiber bundle is irradiated onto the digital mirror device (DMD), and the light reflected from each of a large number of tilt-controlled micromirrors is projected onto the substrate for exposure via an imaging optical system and a microlens array.

[0004] Japanese Patent Application Laid-Open No. 2019-23748

[0005] In exposure apparatuses, it is desirable to suppress the generation of stray light.

[0006] According to a first aspect of the disclosure, a spatial light modulation unit comprises a spatial light modulator including a modulation section having a plurality of mirrors arranged two-dimensionally, a frame surrounding the modulation section, and a substrate on which the modulation section and the frame are mounted, and a cover located on the side of the spatial light modulator where light enters the modulation section, attached to the spatial light modulator, and limiting the incidence of light on the frame, the cover having an opening, and light entering the modulation section through the opening.

[0007] According to a second aspect of the disclosure, an exposure apparatus includes the above-mentioned spatial light modulation unit, an illumination unit that illuminates the spatial light modulator with illumination light, and a stage that carries the spatial light modulator and moves within a plane parallel to the surface of the substrate.

[0008] According to a third aspect of the disclosure, an exposure apparatus includes a spatial light modulator including a modulation section having a plurality of elements arranged two-dimensionally and a frame body surrounding the modulation section, an illumination unit that illuminates the spatial light modulator with illumination light, a light-shielding section that blocks the illumination light from entering the frame body, and a projection unit that projects light from the spatial light modulator onto an object that is scanned in a scanning direction.

[0009] According to a fourth aspect of the disclosure, an exposure apparatus includes a spatial light modulator including a modulation section having a plurality of elements arranged two-dimensionally and a frame body that houses the modulation section, an illumination unit that illuminates the spatial light modulator with illumination light, a projection unit that projects light from the spatial light modulator onto an object that is scanned in a scanning direction, and a light-shielding cover that prevents light of the illumination light that is reflected by the frame body from traveling toward the object.

[0010] The configurations of the embodiments described below may be modified as appropriate, and at least a portion of the configuration may be replaced with other components. Furthermore, components that are not particularly limited in terms of their placement may be placed in any position that can achieve their function, not limited to the placement disclosed in the embodiments.

[0011] FIG. 1 is a perspective view showing an outline of the external configuration of an exposure apparatus according to the first embodiment. FIG. 2 is a diagram showing an example of the arrangement of DMD projection areas projected onto a substrate by each projection unit of a plurality of exposure modules. FIG. 3 is a diagram explaining the state of spliced ​​exposure by each of four specific projection areas in FIG. 2. FIG. 4 is an optical layout diagram showing the specific configuration of two exposure modules aligned in the X-axis direction (scanning exposure direction) as viewed in the XZ plane. FIG. 5(A) is a diagram showing a schematic diagram of a DMD, FIG. 5(B) is a diagram showing the DMD when the power is OFF, FIG. 5(C) is a diagram explaining the mirror in the ON state, and FIG. 5(D) is a diagram explaining the mirror in the OFF state. FIG. 6(A) is a perspective view showing a DMD chip including a DMD, and FIG. 6(B) is a diagram showing the X'Z' cross section of the DMD chip. FIG. 7(A) is a diagram showing the mount to which the DMD chip is attached as viewed from the -Z direction, and FIG. 7(B) is a diagram showing the mount with a light-shielding cover attached. FIG. 8A is a cross-sectional view illustrating the arrangement of the DMD chip and the light-shielding cover. FIG. 8B is a cross-sectional view illustrating the size of the opening of the DMD chip and the positional relationship between the DMD chip and the opening. FIGS. 8C and 8D are views of the DMD and the opening from the -Z direction. FIG. 9 is a diagram illustrating the relationship between the arrangement of the opening and the DMD and the discarded light. FIG. 10 is a schematic diagram illustrating a state in which the DMD and the illumination unit are tilted by an angle θk in the XY plane. FIG. 11 is a diagram illustrating another example of the opening of the light-shielding cover. FIG. 12 is a diagram illustrating a light-shielding cover that blocks the progression of scattered light. FIG. 13 is an optical layout diagram illustrating the specific configuration of the exposure module in the second embodiment as viewed in the XZ plane. FIG. 14 is a diagram illustrating in detail the imaging state of the DMD's micromirrors by the projection unit. Fig. 15(A) is a diagram showing a schematic diagram of a projection area (a group of light irradiation areas) and an exposure target area on a substrate (an area to which a line pattern is exposed), Fig. 15(B) is a diagram showing an example of the arrangement of spot positions in the exposure target area, Fig. 16(A) is a plan view of the field stop FS, and Fig. 16(B) is a cross-sectional view taken along line A-A in Fig. 16(A).FIG. 17(A) is a diagram for explaining the arrangement of a field stop, and FIG. 17(B) is a diagram showing the illuminance distribution of illumination light formed by the field stop. FIG. 18(A) is a diagram showing an example of the illuminance distribution of illumination light, and FIG. 18(B) is a diagram showing an example of exposing a rectangular area using illumination light having the illuminance distribution shown in FIG. 18(A). FIG. 19(A) is a diagram for explaining how a rectangular area is exposed, and FIG. 19(B) is a diagram for explaining how a rectangular area is exposed when the integrated illuminance is corrected. FIG. 20 is a diagram showing an example of a micromirror that is turned off in a DMD. FIG. 21 is a view of the substrate holder from the +Z direction. FIG. 22 is a functional block diagram showing the functional configuration of an exposure control device. FIG. 23 is a flowchart showing an example of processing executed by a drawing data creation unit. FIG. 24(A) is a diagram for explaining another example of the arrangement of a field stop, and FIG. 24(B) is a diagram showing another example of the illuminance distribution of illumination light formed by the field stop. FIG. 25(A) is a plan view showing an example of a field diaphragm having an opening, FIG. 25(B) is a side view of the field diaphragm, FIG. 25(C) is a cross-sectional view taken along line A-A in FIG. 25(A), FIG. 25(D) is a cross-sectional view taken along line B-B in FIG. 25(B), and FIG. 25(E) is a cross-sectional view taken along line C-C in FIG. 25(B). FIG. 26(A) is a diagram illustrating a light-shielding cover according to Modification 1, and FIG. 26(B) is a diagram illustrating a light-shielding cover according to Modification 2. FIG. 27 is a diagram illustrating a field diaphragm according to Modification 3. FIG. 28 is a diagram illustrating a third embodiment in which patterned glass is arranged. FIGS. 29(A) and 29(B) are diagrams illustrating other examples of light-shielding patterns. FIGS. 30(A) and 30(B) are diagrams illustrating other examples of light-shielding patterns. FIG. 31 is a diagram for explaining a case in which the size of the illumination field area is set smaller than the size of the DMD.

[0012] First Embodiment A pattern exposure apparatus (hereinafter simply referred to as exposure apparatus) according to a first embodiment will be described with reference to the drawings.

[0013] [Overall Configuration of Exposure Apparatus] Fig. 1 is a perspective view showing an outline of the external configuration of an exposure apparatus EX according to the first embodiment. The exposure apparatus EX is an apparatus that projects exposure light, the intensity distribution of which is dynamically modulated in space by a spatial light modulator (SLM), onto an exposed substrate to form an image. Examples of spatial light modulators include liquid crystal elements, digital micromirror devices (DMDs), and magneto-optic spatial light modulators (MOSLMs). The exposure apparatus EX according to this embodiment is equipped with a DMD chip including a DMD 10 as the spatial light modulator, but may also be equipped with other spatial light modulators.

[0014] In a specific embodiment, the exposure apparatus EX is a step-and-scan projection exposure apparatus (scanner) that exposes a rectangular (square) glass substrate used in display devices (flat panel displays) and the like. The glass substrate is a substrate P for flat panel displays, with at least one side or diagonal length of 500 mm or more and a thickness of 1 mm or less. The exposure apparatus EX exposes a projected image of a pattern created by a DMD onto a photosensitive layer (photoresist) formed with a constant thickness on the surface of the substrate P. The substrate P is unloaded from the exposure apparatus EX after exposure and is sent to a predetermined process step (film formation step, etching step, plating step, etc.) after a development step.

[0015] The exposure apparatus EX is equipped with a stage device that includes a pedestal 2 placed on active vibration isolation units 1a, 1b, 1c, and 1d (1d not shown), a surface plate 3 placed on the pedestal 2, an XY stage 4A that is movable two-dimensionally on the surface plate 3, a substrate holder 4B that holds a substrate P on a plane by suction on the XY stage 4A, and laser length measurement interferometers (hereinafter simply referred to as interferometers) IFX, IFY1 to IFY4 that measure the two-dimensional movement position of the substrate holder 4B (substrate P). Such a stage device is disclosed, for example, in U.S. Patent Publication No. 2010 / 0018950 and U.S. Patent Publication No. 2012 / 0057140.

[0016] In FIG. 1 , the XY plane of the Cartesian coordinate system XYZ is set parallel to the flat surface of the stage device's base 3, and the XY stage 4A is set to be able to translate within the XY plane. In this embodiment, the direction parallel to the X axis of the coordinate system XYZ is set as the scanning movement direction of the substrate P (XY stage 4A) during scan exposure. The movement position of the substrate P in the X-axis direction is sequentially measured by the interferometer IFX, and the movement position in the Y-axis direction is sequentially measured by at least one (preferably two or more) of the four interferometers IFY1 to IFY4. The substrate holder 4B is configured to be able to move slightly relative to the XY stage 4A in the Z-axis direction, which is perpendicular to the XY plane, and to be able to tilt slightly in any direction relative to the XY plane, thereby actively adjusting the focus and leveling (parallelism) between the surface of the substrate P and the imaging plane of the projected pattern. Furthermore, the substrate holder 4B is configured to be able to rotate slightly (θz rotation) about an axis parallel to the Z axis in order to actively adjust the tilt of the substrate P in the XY plane.

[0017] The exposure apparatus EX further includes an optical table 5 that holds multiple exposure (drawing) modules MU(A), MU(B), and MU(C), and main columns 6a, 6b, 6c, and 6d (6d is not shown) that support the optical table 5 from the pedestal 2. Each of the multiple exposure modules MU(A), MU(B), and MU(C) is attached to the +Z direction side of the optical table 5. The multiple exposure modules MU(A), MU(B), and MU(C) may be attached to the optical table 5 individually, or may be attached to the optical table 5 in a state where two or more exposure modules are connected to each other to increase rigidity. Each of the multiple exposure modules MU(A), MU(B), and MU(C) includes an illumination unit ILU that is attached to the +Z direction side of the optical table 5 and that receives illumination light from an optical fiber unit FBU, and a projection unit PLU that is attached to the −Z direction side of the optical table 5 and has an optical axis parallel to the Z axis. Furthermore, each of the exposure modules MU(A), MU(B), and MU(C) includes a DMD 10 as a modulation unit that reflects illumination light from the illumination unit ILU in the -Z direction and makes it incident on the projection unit PLU. The detailed configuration of the exposure module consisting of the illumination unit ILU, DMD 10, and projection unit PLU will be described later.

[0018] Multiple alignment systems (microscopes) ALG that detect alignment marks formed at multiple predetermined positions on the substrate P are attached to the -Z direction side of the optical surface plate 5 of the exposure apparatus EX. Furthermore, a calibration reference unit CU for calibration is provided at the -X direction end of the substrate holder 4B. Calibration includes at least one of confirming the relative positional relationship in the XY plane of the detection fields of the alignment systems ALG (calibration), confirming the baseline error between the projection positions of the pattern images projected from the projection units PLU of each of the exposure modules MU(A), MU(B), and MU(C) and the positions of the detection fields of the alignment systems ALG (calibration), and confirming the position and image quality of the pattern images projected from the projection units PLU. Note that, although some of the modules are not shown in FIG. 1 , in this embodiment, each of the exposure modules MU(A), MU(B), and MU(C) includes, for example, nine modules arranged at regular intervals in the Y-axis direction, although the number of modules may be more or less than nine. In addition, although three rows of exposure modules are arranged in the X-axis direction in FIG. 1, the number of rows of exposure modules arranged in the X-axis direction may be two or less, or may be four or more.

[0019] 2 is a diagram showing an example of the arrangement of projection areas IAn of the DMD 10 projected onto the substrate P by the projection units PLU of each of the exposure modules MU(A), MU(B), and MU(C), and the Cartesian coordinate system XYZ is set in the same way as in FIG. 1. The projection areas IAn can be said to be the irradiation ranges (light irradiation area groups) of the illumination light that is reflected by the multiple micromirrors Ms of the DMD 10 and directed onto the substrate P by the projection units PLU. In this embodiment, the first row of exposure modules MU(A), the second row of exposure modules MU(B), and the third row of exposure modules MU(C), which are arranged spaced apart in the X-axis direction, each consist of nine modules lined up in the Y-axis direction. Exposure module MU(A) is made up of nine modules MU1 to MU9 arranged in the +Y direction, exposure module MU(B) is made up of nine modules MU10 to MU18 arranged in the -Y direction, and exposure module MU(C) is made up of nine modules MU19 to MU27 arranged in the +Y direction. Modules MU1 to MU27 all have the same configuration, and when exposure module MU(A) and exposure module MU(B) are arranged face to face in the X-axis direction, exposure module MU(B) and exposure module MU(C) are arranged back to back in the X-axis direction.

[0020] 2, the shape of the projection areas IA1, IA2, IA3, ..., IA27 (sometimes referred to as IAn, where n is 1 to 27) by each of the modules MU1 to MU27 is, as an example, a rectangle extending in the Y-axis direction with an aspect ratio of approximately 1:2. In this embodiment, as the substrate P is scanned and moved in the +X direction, patch exposure is performed at the -Y direction end of each of the first row of projection areas IA1 to IA9 and the +Y direction end of each of the second row of projection areas IA10 to IA18. Then, areas on the substrate P that were not exposed by each of the first and second rows of projection areas IA1 to IA18 are patch exposure by each of the third row of projection areas IA19 to IA27. The center point of each of the projection areas IA1 to IA9 in the first column is located on a line k1 parallel to the Y axis, the center point of each of the projection areas IA10 to IA18 in the second column is located on a line k2 parallel to the Y axis, and the center point of each of the projection areas IA19 to IA27 in the third column is located on a line k3 parallel to the Y axis. The distance between lines k1 and k2 in the X axis direction is set to a distance XL1, and the distance between lines k2 and k3 in the X axis direction is set to a distance XL2.

[0021] Here, assuming that the joint portion between the −Y direction end of projection area IA9 and the +Y direction end of projection area IA10 is OLa, the joint portion between the −Y direction end of projection area IA10 and the +Y direction end of projection area IA27 is OLb, and the joint portion between the +Y direction end of projection area IA8 and the −Y direction end of projection area IA27 is OLc, the state of the joint exposure will be described with reference to Figure 3. In Figure 3, the Cartesian coordinate system XYZ is set to be the same as in Figures 1 and 2, and the coordinate system X'Y' in projection areas IA8, IA9, IA10, and IA27 (and all other projection areas IAn) is set to be inclined at an angle θk (0°<θk<90°) with respect to the X and Y axes (lines k1 to k3) of the Cartesian coordinate system XYZ. That is, the areas (light irradiation areas) on the substrate P onto which the illumination light reflected by the many micromirrors of the DMD 10 is projected are arranged two-dimensionally along the X'-axis and Y'-axis.

[0022] The circular area encompassing each of the projection areas IA8, IA9, IA10, and IA27 (and all other projection areas IAn) in FIG. 3 represents the circular image field PLf' of the projection unit PLU. At the joint OLa, the projected image (light irradiation area) of the micromirrors arranged diagonally (at an angle θk) at the end of the projection area IA9 in the -Y' direction is set to overlap with the projected image (light irradiation area) of the micromirrors arranged diagonally (at an angle θk) at the end of the projection area IA10 in the +Y' direction. At the joint OLb, the projected image (light irradiation area) of the micromirrors arranged diagonally (at an angle θk) at the end of the projection area IA10 in the -Y' direction is set to overlap with the projected image (light irradiation area) of the micromirrors arranged diagonally (at an angle θk) at the end of the projection area IA27 in the +Y' direction. Similarly, at the joint OLc, the projected image (light irradiation area) of the micromirror arranged diagonally (at an angle θk) at the end of the +Y' direction of the projection area IA8 and the projected image (light irradiation area) of the micromirror arranged diagonally (at an angle θk) at the end of the -Y' direction of the projection area IA27 are set to overlap.

[0023] [Configuration of the Illumination Unit] Figure 4 is an optical layout diagram showing the specific configuration of module MU18 in exposure module MU(B) and module MU19 in exposure module MU(C) shown in Figures 1 and 2, viewed in the XZ plane. The Cartesian coordinate system XYZ in Figure 4 is set to be the same as the Cartesian coordinate system XYZ in Figures 1 to 3. As is clear from the arrangement of each module in the XY plane shown in Figure 2, module MU18 is shifted by a fixed distance in the +Y direction relative to module MU19, and they are installed back-to-back. Since the optical components in module MU18 and module MU19 are made of the same materials and configured identically, the optical configuration of module MU18 will be mainly described in detail here. Note that the optical fiber unit FBU shown in Figure 1 is composed of 27 optical fiber bundles FB1 to FB27, corresponding to the 27 modules MU1 to MU27 shown in Figure 2.

[0024] The illumination unit ILU of the module MU18 includes a mirror 100 that reflects illumination light ILm traveling in the −Z direction from the output end of the optical fiber bundle FB18, a mirror 102 that reflects the illumination light ILm from the mirror 100 in the −Z direction, an input lens system 104 that acts as a collimator lens, an illuminance adjustment filter 106, an optical integrator 108 that includes a micro fly's eye (MFE) lens, a field lens, etc., a condenser lens system 110, and an inclined mirror 112 that reflects the illumination light ILm from the condenser lens system 110 toward the DMD 10. The mirror 102, the input lens system 104, the optical integrator 108, the condenser lens system 110, and the inclined mirror 112 are arranged along an optical axis AXc that is parallel to the Z axis.

[0025] The optical fiber bundle FB18 is configured by a single optical fiber line or a bundle of multiple optical fiber lines. The illumination light ILm emitted from the output end of the optical fiber bundle FB18 (each of the optical fiber lines) has a numerical aperture (NA, also called a divergence angle) set so that it enters the downstream input lens system 104 without being eclipsed. Here, the illumination light ILm is light having a peak wavelength within a wavelength range of 10 nm or more and 410 nm or less, and the peak wavelength is, for example, any of 193 nm, 248 nm, 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line).

[0026] The position of the front focal point of the input lens system 104 is designed to be the same as the position of the output end of the optical fiber bundle FB18. Furthermore, the position of the back focal point of the input lens system 104 is designed to superimpose illumination light ILm from a single or multiple point light sources formed at the output end of the optical fiber bundle FB18 on the incident surface side of the MFE lens 108A of the optical integrator 108. Therefore, the incident surface of the MFE lens 108A is Koehler illuminated by the illumination light ILm from the output end of the optical fiber bundle FB18. Note that in the initial state, the geometric center point of the output end of the optical fiber bundle FB18 in the XY plane is located on the optical axis AXc, and the chief ray (center line) of the illumination light ILm from the point light source at the output end of the optical fiber line is parallel to (or coaxial with) the optical axis AXc.

[0027] The illumination light ILm from the input lens system 104 is attenuated by an illuminance adjustment filter 106 to a value between 0% and 90%, and then passes through an optical integrator 108 (MFE lens 108A, field lens, etc.) and enters a condenser lens system 110. The MFE lens 108A is a two-dimensional array of numerous rectangular microlenses, each measuring several tens of micrometers square, and its overall shape is set to be approximately similar to the overall shape of the mirror surface of the DMD 10 (aspect ratio of approximately 1:2) in the XY plane. The position of the front focal point of the condenser lens system 110 is set to be approximately the same as the position of the exit surface of the MFE lens 108A. Therefore, each of the illumination light beams from the point light sources formed on the exit side of each of the numerous microlenses of the MFE lens 108A is converted into approximately parallel beams by the condenser lens system 110, reflected by an inclined mirror 112, and then superimposed on the DMD 10 to form a uniform illuminance distribution. A surface light source in which a large number of point light sources (light-converging points) are densely arranged two-dimensionally is generated on the exit surface of the MFE lens 108A, and therefore the MFE lens 108A functions as a surface light source member.

[0028] 4 , optical axis AXc, which is parallel to the Z axis and passes through condenser lens system 110, is bent by inclined mirror 112 and reaches DMD 10, and the optical axis between inclined mirror 112 and DMD 10 is referred to as optical axis AXb. In this embodiment, a neutral plane including the center points of the numerous micromirrors of DMD 10 is set parallel to the XY plane. Therefore, the angle between the normal to that neutral plane (parallel to the Z axis) and optical axis AXb is the angle of incidence θα of illumination light ILm with respect to DMD 10.

[0029] [DMD Configuration] Fig. 5(A) is a diagram showing a schematic diagram of the DMD 10, Fig. 5(B) is a diagram showing the DMD 10 when the power is OFF, Fig. 5(C) is a diagram for explaining the mirrors in the ON state, and Fig. 5(D) is a diagram for explaining the mirrors in the OFF state. Note that in Figs. 5(A) to 5(D), mirrors in the ON state are indicated by hatching.

[0030] The DMD 10 has a plurality of micromirrors Ms whose reflection angles can be changed. In this embodiment, the DMD 10 is of a roll and pitch drive type that switches between an ON state and an OFF state by tilting the micromirrors Ms in the roll direction and in the pitch direction.

[0031] 5B, when the power is OFF (the micromirrors Ms are in a neutral state), the reflective surface of each micromirror Ms is set parallel to the X'Y' plane. The arrangement pitch of each micromirror Ms in the X'-axis direction is Pdx (μm), and the arrangement pitch in the Y'-axis direction is Pdy (μm), but in practice, Pdx = Pdy.

[0032] Each micromirror Ms is turned ON by tilting around the Y' axis. FIG. 5C shows a case where only the central micromirror Ms is turned ON, while the other micromirrors Ms are in a neutral state (neither ON nor OFF). Each micromirror Ms is turned OFF by tilting around the X' axis. FIG. 5D shows a case where only the central micromirror Ms is turned OFF, while the other micromirrors Ms are in a neutral state. For simplicity, although not shown, the micromirrors Ms in the ON state are driven to tilt at a predetermined angle from the X'Y' plane so that illumination light irradiated onto the micromirrors Ms in the ON state is reflected in the X-axis direction of the XZ plane. The micromirrors Ms in the OFF state are driven to tilt at a predetermined angle from the X'Y' plane so that illumination light irradiated onto the micromirrors Ms in the OFF state is reflected in the Y-axis direction of the YZ plane. The DMD 10 generates an exposure pattern by switching the ON and OFF states of each micromirror Ms.

[0033] The illumination light reflected by the mirror in the OFF state is absorbed by a light absorber (not shown).

[0034] Although the DMD 10 has been described as an example of a spatial light modulator and is therefore a reflective type that reflects laser light, the spatial light modulator may be a transmissive type that transmits laser light or a diffractive type that diffracts laser light. The spatial light modulator can modulate laser light spatially and temporally.

[0035] 4, illumination light ILm irradiated onto micromirrors Ms of the DMD 10 that are in the ON state is reflected in the X-axis direction within the XZ plane so as to head towards the projection unit PLU. On the other hand, illumination light ILm irradiated onto micromirrors Ms of the DMD 10 that are in the OFF state is reflected in the Y-axis direction within the YZ plane so as not to head towards the projection unit PLU.

[0036] A movable shutter 114 is removably provided in the optical path between the DMD 10 and the projection unit PLU to block light reflected from the DMD 10 during non-exposure periods. As shown on the module MU19 side, the movable shutter 114 is rotated to an angular position where it is removed from the optical path during exposure periods, and as shown on the module MU18 side, it is rotated to an angular position where it is inserted obliquely into the optical path during non-exposure periods. A reflective surface is formed on the DMD 10 side of the movable shutter 114, and light reflected therefrom from the DMD 10 is irradiated onto a light absorber 115. The light absorber 115 absorbs light energy in the ultraviolet wavelength range (wavelengths of 400 nm or less) without re-reflecting it and converts it into heat energy. For this reason, the light absorber 115 is also provided with a heat dissipation mechanism (heat dissipation fins and a cooling mechanism). Although not shown in Figure 4, the reflected light from the micromirror Ms of DMD 10, which is in the OFF state during the exposure period, is absorbed by a similar light absorber (not shown in Figure 4) installed in the Y-axis direction (a direction perpendicular to the plane of the paper in Figure 4) with respect to the optical path between DMD 10 and projection unit PLU, as described above.

[0037] [DMD Chip] The DMD 10 is used in the form of a package (chip). Fig. 6(A) is a perspective view showing an example of a DMD chip CHP including the DMD 10, and Fig. 6(B) is a diagram showing an example of an X'Z' cross section of the DMD chip CHP. In Figs. 6(A) and 6(B), the direction perpendicular to the neutral plane of the DMD 10 is defined as the Z'-axis direction.

[0038] As shown in Figure 6(B), the DMD chip CHP includes the DMD 10, a frame FRM surrounding the DMD 10, and a substrate SB on which the DMD 10 and frame FRM are mounted. In this embodiment, the frame FRM is supported by a support portion SPP. The support portion SPP is made of metal, glass, resin, or the like. The frame FRM and support portion SPP may be integral with each other.

[0039] The frame body FRM has an opening OPN11. The DMD 10 overlaps with the opening OPN11 of the frame body FRM. The reflectance of the frame body FRM to the illumination light ILm is greater than the reflectance of the plurality of micromirrors Ms to the illumination light ILm.

[0040] In this embodiment, the DMD chip CHP also includes a cover glass CGLS that protects the DMD 10. The cover glass CGLS is supported by the frame body FRM. The cover glass CGLS is not limited to glass and may be made of, for example, quartz, as long as it is a transparent member that transmits the illumination light ILm. The cover glass CGLS may be omitted.

[0041] 4 shows only the DMD 10, but in reality, the DMD chip CHP is attached to a fine movement stage 10S provided on a mount 10M fixed to a support column of the illumination unit ILU. The fine movement stage 10S can be, for example, a fine movement stage that combines a parallel link mechanism and an expandable piezoelectric element, as disclosed in International Patent Publication No. 2006 / 120927. This allows for fine adjustment of the position and orientation of the DMD 10.

[0042] The area on the X'Y' plane illuminated by illumination light ILm at the position of the neutral plane of DMD 10 is called the illumination field area. In this embodiment, the illumination field area is set so that the entire DMD 10 is illuminated by illumination light ILm even if the position of DMD 10 is shifted in the X'-axis direction, Y'-axis direction, and θz direction by fine movement stage 10S. In other words, the illumination field area is an area that includes the dimensions of DMD 10 plus the movable range of DMD 10 in the X'-axis direction and Y'-axis direction, and the size of the illumination field area is larger than the size of DMD 10. In other words, illumination light ILm illuminates DMD 10 and the periphery of DMD 10.

[0043] If the size of the illumination field area is larger than the size of the DMD 10, part of the illumination light ILm may be incident on the frame body FRM of the DMD chip CHP and reflected by the frame body FRM, causing scattered light (flare light) and stray light, which may adversely affect the exposure results.

[0044] Therefore, in this embodiment, in order to suppress the occurrence of stray light, a light-shielding cover CVR is provided that limits the incidence of illumination light ILm on the frame body FRM (see FIG. 4). Note that in the following description, the DMD chip CHP and the light-shielding cover CVR may be collectively referred to as the spatial light modulation unit SLMU.

[0045] As shown in Figure 4, the light-shielding cover CVR is located on the side of the DMD chip CHP where the illumination light ILm is incident on the DMD 10. The light-shielding cover CVR is attached to the DMD chip CHP. The light-shielding cover CVR is preferably positioned away from the frame FRM and the cover glass CGLS. By positioning the light-shielding cover CVR in this manner, the light-shielding cover CVR can be spaced away from the DMD 10, and the effect of heat absorbed by the light-shielding cover CVR on the DMD 10 can be reduced.

[0046] In this embodiment, the reflectance of the light shielding cover CVR to the illumination light ILm is lower than the reflectance of the multiple micromirrors Ms to the illumination light ILm. More specifically, the light shielding cover CVR is subjected to a low-reflection treatment (such as black chrome plating) to set the reflectance of the illumination light ILm to 20% or less, preferably 10% or less. This makes it possible to suppress the generation of scattered light due to the reflection of the illumination light ILm by the light shielding cover CVR. Note that while the entire light shielding cover CVR may be subjected to a low-reflection treatment, it is sufficient that at least the surface of the light shielding cover CVR onto which the illumination light ILm is incident (the surface on the -Z side) is subjected to the low-reflection treatment.

[0047] Fig. 7(A) is a view of the DMD chip CHP without the light-shielding cover CVR attached, as viewed from the -Z direction, and Fig. 7(B) is a view of the DMD chip CHP with the light-shielding cover CVR attached, as viewed from the -Z direction. In Fig. 7(B), the components of the DMD chip CHP hidden by the light-shielding cover CVR are indicated by dotted lines.

[0048] As shown in Fig. 7B, an opening OPN1 is formed in the light-shielding cover CVR (the light-shielding cover CVR has the opening OPN1). The illumination light ILm is incident on the DMD 10 through the opening OPN1. As shown in Fig. 7B, the opening OPN1 of the light-shielding cover CVR overlaps with the frame body FRM.

[0049] 8A is a cross-sectional view illustrating the arrangement of the DMD chip CHP and the light-shielding cover CVR, and FIG. 8B is a cross-sectional view illustrating the size of the opening OPN1 of the DMD chip CHP and the positional relationship between the DMD chip CHP and the opening OPN1. Note that FIGS. 8A and 8B illustrate the case where illumination light ILm is incident on the DMD 10 from a direction parallel to the X′ axis.

[0050] As shown in FIG. 8A, when viewed from the incident direction of the illumination light ILm, the portion of the light-shielding cover CVR other than the opening OPN1 overlaps with the frame body FRM of the DMD chip CHP.

[0051] As a result, the light-shielding cover CVR prevents the illumination light ILm1, illumination light ILm2, illumination light ILm7, and illumination light ILm8 that would be incident on the frame body FRM if the light-shielding cover CVR were not installed from entering the frame body FRM, thereby preventing the illumination light ILm1, illumination light ILm2, illumination light ILm7, and illumination light ILm8 from being reflected by the frame body FRM and generating scattered light.

[0052] Furthermore, when viewed from the direction in which the illumination light ILm is incident, the portion of the light-shielding cover CVR other than the opening OPN1 does not overlap with the DMD 10. This allows the illumination light ILm4 to the illumination light ILm6 to be incident on the DMD 10.

[0053] As shown in Figure 8 (B), if Hin is the distance between a plane that includes the point closest to the substrate SB on the reflective surface of the micromirror Ms of the DMD 10 when the micromirror Ms is in the ON state and is parallel to the surface of the substrate SB, or a plane that includes the reflective surface of the micromirror Ms when the reflective surface of the micromirror Ms of the DMD 10 is parallel to the surface of the substrate SB, and the +Z side surface of the light-shielding cover CVR, and D1 is the distance between the -Z side surface of the frame body FRM and the +Z side surface of the light-shielding cover CVR, then Hin > D1.

[0054] Furthermore, when the reflecting surface of the micromirror Ms is parallel to the surface of the substrate SB, the angle of incidence of the illumination light ILm on the reflecting surface of the micromirror Ms is defined as θin (=θα). In this embodiment, θin is twice the inclination angle of the reflecting surface of the micromirror Ms when the micromirror Ms is in the ON state. θin may be set taking into account an error (e.g., ±0.5°) in the inclination angle of the reflecting surface of the micromirror Ms when the micromirror Ms is in the ON state. Furthermore, when viewed from a direction perpendicular to the surface of the substrate SB (the Z-axis direction), if the distance between a point PNT1 on the edge forming the opening OPN1 and the micromirror Ms closest to point PNT1 is defined as Lin, then tan θin < Lin / Hin is satisfied. Here, the point PNT1 on the edge forming the opening OPN1 will be described with reference to FIGS. 8C and 8D.

[0055] 8(C) and 8(D) are views of the DMD 10 and the opening OPN1 as viewed from the -Z direction. In FIG. 8(C), the illumination light ILm enters the DMD 10 from a direction parallel to the X' axis. At this time, in the X'Y' plane, the point where the edge EDG1 forming the opening OPN1 intersects with the line indicating the optical axis of the incident light ILm is the point PNT1. In FIG. 8(C), the micromirror Ms closest to PNT1 is indicated by hatching.

[0056] 8(D), illumination light ILm enters DMD 10 from a direction tilted with respect to the X' axis (or Y' axis). At this time, in the X'Y' plane, the point where edge EDG1 forming opening OPN1 intersects with the line indicating the optical axis of incident light ILm is point PNT1. In FIG. 8(D), the micromirror Ms closest to PNT1 is indicated by hatching.

[0057] By satisfying tan θin<Lin / Hin, the illumination light ILm is not blocked from entering the DMD 10, and the illumination light ILm is prevented from being reflected by the frame FRM and generating scattered light, thereby suppressing the generation of stray light.

[0058] Furthermore, PNT11 denotes a point on the edge EDG11 that forms the opening OPN11 of the frame body FRM of the DMD chip CHP, the point being located on a plane perpendicular to the surface of the substrate SB and including a line connecting point PNT1 on the edge EDG1 of the opening OPN1 of the light-shielding cover CVR to the micromirror Ms closest to point PNT1. In this case, the inclination angle θc of the line LIN11 connecting point PNT11 and point PNT1 with respect to the line LIN1 that is perpendicular to the surface of the substrate SB is smaller than θin. This prevents the illumination light ILm from being blocked from entering the DMD 10, and prevents the illumination light ILm from being reflected by the frame body FRM and generating scattered light.

[0059] Furthermore, of the two sides SD1, SD2 (see FIG. 8A) of the opening OPN1 extending in the Y'-axis direction, the distance Lin in the X'-axis direction between the side SD1 on the incident side of the illumination light ILm and the DMD 10 is longer than the distance D2 in the X'-axis direction between the other side SD2 and the DMD 10 (see FIG. 8B). This makes it possible to prevent the illumination light ILm, which is obliquely incident on the DMD 10, from being vignetted by the light-shielding cover CVR.

[0060] Furthermore, the opening OPN1 of the light-shielding cover CVR passes illumination light (hereinafter referred to as "waste light") ILm_out reflected by the micromirror Ms in the OFF state. Figure 9 is a diagram illustrating the relationship between the arrangement of the opening OPN1 and the DMD 10 and the waste light ILm_out. In Figure 9, the waste light ILm_out travels in the Y'-axis direction.

[0061] Let Hout be the distance between the +Z side surface of the light-shielding cover CVR and a plane that includes the point closest to the substrate SB on the reflective surface of the micromirror Ms when the micromirror Ms included in the DMD 10 is in the OFF state and is parallel to the surface of the substrate SB, or a plane that includes the reflective surface of the micromirror Ms when the reflective surface of the micromirror Ms included in the DMD 10 is parallel to the surface of the substrate SB. Also, let θout be the angle between the optical axis AXex of the exposure light and the optical axis of the waste light ILm_out in a plane (the X'Y' plane in FIG. 9 ) that is perpendicular to the surface of the substrate SB and includes the optical axis AXex of the exposure light and the optical axis of the waste light ILm_out. Furthermore, let Lout be the distance between point PNT3, where a plane (the X'Y' plane in FIG. 9 ) perpendicular to the surface of the substrate SB, including the optical axis AXex of the exposure light and the optical axis of the waste light ILm_out, intersects with the edge EDG1 forming the opening OPN1, and the micromirror Ms of the DMD 10 that is closest to point PNT3. In this case, tan θout < Lout / Hout is satisfied. This allows the waste light ILm_out reflected by the micromirror Ms in the OFF state to be incident on a light-absorbing member (not shown) without blocking the travel of the illumination light ILm_out reflected by the micromirror Ms in the OFF state. Note that the travel direction of the waste light ILm_out reflected by the micromirror Ms in the OFF state is not limited to the Y'-axis direction but depends on the settings of the DMD 10. Even if the direction of travel of the waste light ILm_out is not the Y'-axis direction, the angle between the optical axis AXex of the exposure light and the optical axis of the waste light ILm_out is defined as θout, and the distance between the point where a plane perpendicular to the surface of the substrate SB, which includes the optical axis AXex of the exposure light and the optical axis of the waste light ILm_out, intersects with the edge EDG1 forming the opening OPN1, and the micromirror Ms closest to that point among the multiple micromirrors Ms of the DMD 10 is defined as Lout, so long as tan θout < Lout / Hout is satisfied.

[0062] Although the case where the light-shielding cover CVR is attached to the DMD chip CHP has been described, the light-shielding cover CVR may also be attached to a member other than the DMD chip CHP. In this case, the light-shielding cover CVR is fixed so that the relative positional relationship between the opening OPN1 and the DMD 10 does not change. For example, the light-shielding cover CVR may be fixed to the fine movement stage 10S. Alternatively, the light-shielding cover CVR may be fixed to a member other than the DMD chip CHP or the fine movement stage 10S. In this case, it is preferable to shift the light-shielding cover CVR in accordance with the shift in position of the DMD 10 by the fine movement stage 10S.

[0063] 4 , the projection unit PLU attached to the underside of the optical base 5 is configured as a double-telecentric imaging projection lens system composed of a first lens group 116 and a second lens group 118 arranged along an optical axis AXa parallel to the Z axis. The first lens group 116 and the second lens group 118 are each configured to move translationally in the direction along the Z axis (optical axis AXa) by a micro-motion actuator relative to a support column fixed to the underside of the optical base 5. The projection magnification Mp of the imaging projection lens system formed by the first lens group 116 and the second lens group 118 is determined by the relationship between the array pitches Pdx and Pdy of the micromirrors on the DMD 10 and the minimum line width (minimum pixel dimension) Pg of the pattern projected within the projection area IAn (n = 1 to 27) on the substrate P.

[0064] As an example, if the required minimum line width (minimum pixel dimension) Pg is 1 μm and the micromirror array pitches Pdx and Pdy are each 5.4 μm, the projection magnification Mp is set to approximately 1 / 6, taking into consideration the tilt angle θk in the XY plane of the projection area IAn (DMD 10) described above in Figure 3. The imaging projection lens system consisting of lens groups 116 and 118 inverts / reflects a reduced image of the entire mirror surface of DMD 10 and forms an image on the projection area IA18 (IAn) on the substrate P.

[0065] The first lens group 116 of the projection unit PLU is capable of slight movement in the direction of the optical axis AXa by an actuator in order to finely adjust the projection magnification Mp (on the order of ±several tens of ppm), and the second lens group 118 is capable of slight movement in the direction of the optical axis AXa by an actuator in order to perform high-speed focus adjustment. Furthermore, in order to measure positional changes in the Z-axis direction of the surface of the substrate P with an accuracy of submicron or less, a plurality of oblique incidence focus sensors 120 are provided below the optical surface plate 5. The plurality of focus sensors 120 measure overall positional changes in the Z-axis direction of the substrate P, positional changes in the Z-axis direction of partial areas on the substrate P corresponding to each of the projection areas IAn (n = 1 to 27), partial tilt changes of the substrate P, etc.

[0066] As explained above in Figure 3, the illumination unit ILU and projection unit PLU described above require the projection area IAn to be tilted by an angle θk in the XY plane, so the DMD 10 and illumination unit ILU in Figure 4 (at least the optical path portion of mirrors 102 to 112 along the optical axis AXc) are arranged so that they are tilted overall by an angle θk in the XY plane.

[0067] Figure 10 is a schematic diagram showing the state in the XY plane where the DMD 10 and projection unit PLU are tilted by an angle θk in the XY plane. In Figure 10, the Cartesian coordinate system XYZ is the same as the coordinate systems XYZ in Figures 1 to 4, and the coordinate system X'Y' for arranging the micromirrors Ms of the DMD 10 is the same as the coordinate system X'Y' shown in Figure 3. The circle containing the DMD 10 is the image field PLf on the object side of the projection unit PLU, and the optical axis AXa is located at its center. Meanwhile, the optical axis AXb, which is obtained by bending the optical axis AXc that passes through the condenser lens system 110 of the illumination unit ILU by the tilted mirror 112, is positioned so that it is tilted by an angle θk from a line Lu that is parallel to the X axis, when viewed in the XY plane.

[0068] A light beam formed only by reflected light from the micromirrors Ms of the DMD 10 that are in the ON state (i.e., a spatially modulated light beam) is irradiated onto an area on the substrate P that is optically conjugate with the micromirrors Ms via the projection unit PLU. In this way, the pattern generated by the DMD 10 is formed on the substrate P.

[0069] As described above in detail, the spatial light modulation unit SLMU according to this embodiment comprises: a DMD 10 having a plurality of micromirrors Ms arranged two-dimensionally; a DMD chip CHP including a frame body FRM surrounding the DMD 10; and a substrate SB on which the DMD 10 and frame body FRM are mounted; and a light-shielding cover CVR located on the side of the DMD chip CHP where the illumination light ILm is incident on the DMD 10, attached to the DMD chip CHP, and limiting the incidence of the illumination light ILm on the frame body FRM, the light-shielding cover CVR having an opening OPN1 through which the illumination light ILm is incident on the DMD 10. This makes it possible to suppress the occurrence of scattered light and stray light when the illumination light ILm is reflected by the frame body FRM.

[0070] In this embodiment, the opening OPN1 of the light-shielding cover CVR overlaps with the frame FRM, which prevents the illumination light ILm that should be incident on the DMD 10 from being blocked by the light-shielding cover CVR.

[0071] Furthermore, in this embodiment, the distance Hin between the light-shielding cover CVR and the DMD 10 is greater than the distance D1 between the light-shielding cover CVR and the frame FRM. This prevents the illumination light ILm that should be incident on the DMD 10 from being vignetted by the light-shielding cover CVR. Depending on the size of the opening OPN1, the distance Hin between the light-shielding cover CVR and the DMD 10 may be equal to the distance D1 between the light-shielding cover CVR and the frame FRM.

[0072] In this embodiment, the exposure apparatus EX also includes a spatial light modulation unit SLMU, an illumination unit ILU that illuminates the DMD chip CHP with illumination light ILm, and a fine movement stage 10S that carries the DMD chip CHP and moves within a plane parallel to the surface of the substrate SB, thereby allowing the position of the DMD 10 to be shifted.

[0073] Furthermore, in this embodiment, the illumination unit ILU illuminates the DMD 10 and the periphery of the DMD 10. This makes it possible to prevent the occurrence of an area on the DMD 10 that is not illuminated by the illumination light ILm, even if the position of the DMD 10 shifts.

[0074] Furthermore, in this embodiment, the exposure apparatus EX is equipped with a DMD chip CHP including a DMD 10 having a plurality of micromirrors Ms arranged two-dimensionally and a frame FRM surrounding the DMD 10, an illumination unit ILU that illuminates the DMD chip CHP with illumination light ILm, a light-shielding cover CVR that blocks the illumination light ILm from entering the frame FRM, and a projection unit PLU that projects the light from the DMD 10 onto a substrate P that is scanned in the scanning direction. Because the light-shielding cover CVR blocks the illumination light ILm from entering the frame FRM, it is possible to suppress the illumination light ILm from being reflected by the frame FRM, generating scattered light and thus the generation of stray light.

[0075] In this embodiment, the light-shielding cover CVR is formed with a substantially rectangular opening OPN1 that allows the illumination light ILm to pass through, and when viewed from the direction in which the illumination light ILm is incident on the DMD chip CHP, the portion of the light-shielding cover CVR other than the opening OPN1 overlaps with the frame body FRM of the DMD chip CHP. This makes it possible to suppress the illumination light ILm being reflected by the frame body FRM, which generates scattered light and thus stray light.

[0076] In the first embodiment, the light-shielding cover CVR overlaps the frame body FRM of the DMD chip CHP when viewed from the direction of incidence of the illumination light ILm to prevent the illumination light ILm from entering the frame body FRM. However, this is not limited to this. For example, the light-shielding cover CVR may be omitted, and the frame body FRM may be subjected to a low-reflection treatment (such as black chrome plating) that reduces the reflectance of the illumination light ILm to 20% or less, preferably 10% or less. This also prevents the illumination light ILm from being reflected by the frame body FRM and resulting in scattered light (flare light). Furthermore, even if the frame body FRM has low reflectivity, the light-shielding cover CVR may be provided. This also reduces the impact of heat on the DMD 10.

[0077] Furthermore, in the above embodiment, the size of the opening OPN1 of the light-shielding cover CVR on the DMD 10 side is substantially the same as the size of the opening OPN1 on the opposite side from the DMD 10 (the inner wall of the opening OPN1 of the light-shielding cover CVR is substantially perpendicular to the neutral plane (X'Y' plane) of the DMD 10), but this is not limited to this. For example, as shown in FIG. 11 , the size of the opening OPN1 on the opposite side from the DMD 10 may be larger than the size of the opening OPN1 on the DMD 10 side. In other words, the inner wall of the opening OPN1 may be inclined. This makes it possible to prevent the illumination light ILm that should be incident on the DMD 10 from being vignetted by the light-shielding cover CVR.

[0078] Furthermore, in the above embodiment, the light-shielding cover CVR is intended to prevent the illumination light ILm from entering the frame body FRM of the DMD chip CHP, but this is not limiting. For example, the light-shielding cover may be arranged to prevent scattered light (flare light) generated by the reflection of the illumination light ILm by the frame body FRM from traveling toward the substrate P. In this case, the light-shielding cover may be arranged in a position that blocks the progression of scattered light but does not block the progression of exposure light reflected by the micromirrors Ms in the ON state.

[0079] 12 is a diagram for explaining the light-shielding cover CVR3 that blocks the progression of scattered light, in which the scattered light is indicated by a broken line and the exposure light is indicated by a solid line.

[0080] The light-shielding cover CVR3 has an opening OPN4 that passes light (exposure light) reflected by the micromirror Ms in the ON state. The size of the opening OPN4 of the light-shielding cover CVR3 and the positional relationship between the DMD 10 and the light-shielding cover CVR3 are determined so as to block the progression of scattered light but not block the progression of exposure light reflected by the micromirror Ms in the ON state. Specifically, tan θ ＮＡ The size of the opening OPN4 and the positional relationship between the light-shielding cover CVR3 and the DMD 10 are determined so as to satisfy <L / H. Here, L is the distance between the opening OPN4 of the light-shielding cover CVR3 and the DMD 10, and H is the distance between the plane including the reflective surface of the micromirror Ms provided in the DMD 10 when the reflective surface of the micromirror Ms is parallel to the surface of the substrate SB and the +Z side surface of the light-shielding cover CVR3. ＮＡ is defined by the following formula: θ ＮＡ = sin －１ (NA×β / n), where NA represents the numerical aperture of the projection unit PLU, n represents the refractive index of the optical path medium, and β represents the optical magnification. In this way, a light-shielding cover CVR3 may be provided that blocks scattered light (flare light) generated when the illumination light ILm is reflected by the frame FRM from proceeding to the substrate P.

[0081] Second Embodiment Figure 13 is an optical layout diagram showing the specific configuration of module MU18 in exposure module MU(B) and module MU19 in exposure module MU(C) in the second embodiment, viewed in the XZ plane. Note that, hereinafter, the area on substrate P conjugate with each micromirror Ms will be referred to as the "light irradiation area," and a collection of light irradiation areas will be referred to as the "light irradiation area group." Note that projection area IAn coincides with the light irradiation area group. In other words, the light irradiation area group on substrate P has a large number of light irradiation areas aligned in two dimensions (X'-axis direction and Y'-axis direction).

[0082] The second embodiment differs from the first embodiment in that a field stop FS is disposed in the optical path of the illumination light ILm between the optical integrator 108 and the DMD 10 .

[0083] [Imaging Light Path by DMD] The imaging state of the micromirrors Ms of the DMD 10 by the projection unit PLU (imaging projection lens system) will be described in detail with reference to Figure 14. The Cartesian coordinate system X'Y'Z in Figure 14 is the same as the coordinate systems X'Y'Z shown in Figures 3 and 10, and Figure 14 illustrates the optical path from the condenser lens system 110 of the illumination unit ILU to the substrate P. Illumination light ILm from the condenser lens system 110 travels along the optical axis AXc, is totally reflected by the inclined mirror 112, and reaches the mirror surface of the DMD 10 along the optical axis AXb. Here, the micromirror Ms located at the center of the DMD 10 is referred to as Msc, and the micromirrors Ms located on the periphery are referred to as Msa, and it is assumed that these micromirrors Msc and Msa are in the ON state.

[0084] If the tilt angle of micromirror Ms in the ON state is, for example, a standard value of 17.5° with respect to the X'Y' plane (XY plane), then the angle of incidence θα (the angle of optical axis AXb from optical axis AXa) of illumination light ILm irradiated onto DMD 10 is set to 35.0° in order to make the chief rays of reflected light Sc and Sa from micromirrors Msc and Msa parallel to the optical axis AXa of projection unit PLU. Accordingly, in this case, the reflective surface of tilted mirror 112 is also tilted by 17.5° (=θα / 2) with respect to the X'Y' plane (XY plane). The chief ray Lc of reflected light Sc from micromirror Msc is coaxial with the optical axis AXa, and the chief ray La of reflected light Sa from micromirror Msa is parallel to the optical axis AXa, so that the reflected light Sc and Sa enter projection unit PLU with a predetermined numerical aperture (NA).

[0085] The reflected light Sc forms a telecentric image ic of the micromirror Msc, which has been reduced by the projection magnification Mp of the projection unit PLU, on the substrate P at the position of the optical axis AXa. Similarly, the reflected light Sa forms a telecentric image ia of the micromirror Msa, which has been reduced by the projection magnification Mp of the projection unit PLU, on the substrate P at a position away from the reduced image ic in the +X' direction. As an example, the first lens group 116 of the projection unit PLU is composed of two lens groups G1 and G2, and the second lens group 118 is composed of three lens groups G3, G4, and G5. An exit pupil (also simply referred to as a pupil) Ep is set between the lens group G3 and the lens group G4 of the second lens group 118. At the position of the pupil Ep, a light source image of the illumination light ILm (a collection of numerous point light sources formed on the exit surface side of the MFE lens 108A) is formed, resulting in a Koehler illumination configuration. The pupil Ep is also called the aperture of the projection unit PLU, and the size (diameter) of this aperture is one factor that determines the resolving power of the projection unit PLU.

[0086] The specularly reflected light from the micromirror Ms of the DMD 10 in the ON state is set to pass through without being blocked by the maximum aperture (diameter) of the pupil Ep, and the numerical aperture NAi on the image side (substrate P side) in the equation R=k1·(λ / NAi), which expresses the resolution R, is determined by the maximum aperture of the pupil Ep and the distance of the rear (image side) focal point of the projection unit PLU (lens group G1 to G5 as an imaging projection lens system). Also, the numerical aperture NAo on the object plane (DMD 10) side of the projection unit PLU (lens group G1 to G5) is expressed as the product of the projection magnification Mp and the numerical aperture NAi, and when the projection magnification Mp is 1 / 6, then NAo=NAi / 6.

[0087] 13 and 14 , the exit ends of the optical fiber bundles FBn (n = 1 to 27) connected to each module MUn (n = 1 to 27) are set by the input lens system 104 to be optically conjugate with the exit end side of the MFE lens 108A of the optical integrator 108, and the entrance end side of the MFE lens 108A is set by the condenser lens system 110 to be optically conjugate with the center of the mirror surface (neutral plane) of the DMD 10. As a result, the illumination light ILm irradiated onto the entire mirror surface of the DMD 10 has a uniform illuminance distribution (for example, intensity unevenness within ±1%) due to the action of the optical integrator 108. Furthermore, the exit end side of MFE lens 108A and the plane of pupil Ep of projection unit PLU are set in an optically conjugate relationship by condenser lens system 110 and lens groups G1 to G3 of projection unit PLU.

[0088] 15A is a diagram schematically illustrating a projection area (light irradiation area group) IAn and exposure target areas (areas where a line pattern is exposed) 30a, 30b on a substrate P. In this embodiment, the exposure target areas 30a, 30b are scanned relative to the projection area (light irradiation area group) IAn, and the DMD 10 turns on the micromirror Ms corresponding to the light irradiation area 32 at the timing when the center (referred to as the spot position) of the light irradiation area 32 included in the projection area (light irradiation area group) IAn is positioned within the exposure target areas 30a, 30b.

[0089] 15B, attention is now focused on rectangular region 34a, which is part of linear exposure target region 30a, and rectangular region 34b, which is part of exposure target region 30b (see dashed-line frames (reference numerals 34a and 34b) in FIG. 15A). These rectangular regions 34a and 34b are, for example, square regions with sides measuring 1 μm. The light irradiation regions 32 corresponding to each micromirror Ms are also assumed to be square regions with sides measuring 1 μm.

[0090] 15B shows the rectangular areas 34a and 34b exposed with 61 pulses and 61 spot positions arranged (staggered). Here, due to manufacturing errors and assembly errors of each component and variations in the optical characteristics of the optical components, a difference (uneven illuminance) may occur between the integrated illuminance (total exposure amount) of the rectangular area 34a and the integrated illuminance of the rectangular area 34b. That is, the integrated illuminance may vary depending on the position in the Y-axis direction, resulting in an uneven distribution of the integrated illuminance in the Y-axis direction. It is desirable that the integrated illuminance distribution in the Y-axis direction be uniform.

[0091] Therefore, for example, if the integrated illuminance of rectangular area 34a is higher than the integrated illuminance of rectangular area 34b, it is possible to reduce the amount of exposure to rectangular area 34a and correct (reduce) the integrated illuminance of rectangular area 34a by turning off some of the micromirrors Ms that are scheduled to be turned on when exposing rectangular area 34a.

[0092] However, for example, if the rectangular area 34a is exposed with 61 pulses and the illuminance of all 61 pulses is equal, the change in the integrated illuminance due to turning off one micromirror Ms is 1.64% (= 1 / 61 × 100). From the viewpoint of uniformity of the integrated illuminance distribution, it is desirable to be able to correct the integrated illuminance with higher resolution.

[0093] Therefore, in this embodiment, a field stop FS is disposed on the optical path of the illumination light ILm between the optical integrator 108 and the DMD 10. Fig. 16(A) is a plan view of the field stop FS, and Fig. 16(B) is a cross-sectional view taken along line A-A in Fig. 16(A). Fig. 17(A) is a diagram for explaining the arrangement of the field stop FS, and Fig. 17(B) is a diagram showing the illuminance distribution of the illumination light formed by the field stop FS.

[0094] 16A, the field stop FS has a first member 40a and a second member 40b. The first member 40a is a quadrangular prism having a substantially rectangular cross section, and the second member 40b is a quadrangular prism having a substantially right-angled trapezoidal cross section.

[0095] Furthermore, the side surface 41b of the second member 40b facing the illumination light ILm (see FIG. 17(B)) is inclined relative to the bottom surface so that the angle (interior angle) formed between the bottom surface and the side surface 41b is an acute angle. This prevents the illumination light ILm from being reflected by the side surface 41b of the field stop FS facing the illumination light ILm. In this embodiment, the field stop FS is subjected to a low-reflection treatment (such as black chrome plating) so that the reflectance of the illumination light ILm is 20% or less, preferably 10% or less. This prevents the illumination light ILm from being reflected by the field stop FS, causing scattered light and stray light.

[0096] In this embodiment, the field stop FS is disposed between the tilted mirror 112 and the DMD 10. The field stop FS may be disposed at any position on the optical path of the illumination light ILm between the optical integrator 108 and the DMD 10. For example, the field stop FS may be disposed between the condenser lens system 110 and the tilted mirror 112, or between the optical integrator 108 and the condenser lens system 110.

[0097] In this embodiment, the field stop FS is attached to, for example, the DMD chip CHP so that its relative positional relationship with the DMD 10 does not change. The field stop FS may also be attached to, for example, the fine movement stage 10S. Alternatively, the field stop FS may be fixed to a member other than the DMD chip CHP or the fine movement stage 10S, and in this case, it is preferable to shift the field stop FS in accordance with the shift in position of the DMD 10 by the fine movement stage 10S.

[0098] 17(B), the first member 40a and the second member 40b extend in a direction (Y'-axis direction) that is approximately perpendicular to the scanning direction (X-axis direction) of the substrate P, out of the two axial directions (X'-axis direction and Y'-axis direction) that define the array coordinate system X'Y' of the micromirrors Ms. As a result, the first member 40a and the second member 40b block part of the illumination light ILm along the Y'-axis direction. This makes it possible to change the illuminance of the illumination light ILm depending on the position in the X'-axis direction.

[0099] Furthermore, the first member 40a and the second member 40b are arranged at a predetermined interval in the X'-axis direction, which is perpendicular to the Y'-axis direction, and block a portion of the illumination light ILm along both edges of the DMD 10 in the X'-axis direction. As a result, as shown in FIG. 17B , the illuminance distribution of the illumination light ILm in the X'-axis direction becomes an illuminance distribution in which the illuminance is low at both edges of the DMD 10 in the X'-axis direction and high in the center (a top-hat illuminance distribution shown in FIG. 17B ). The illuminance distribution includes a region of illuminance greater than 0% and less than 50% of the maximum illuminance in the illuminance distribution. Furthermore, for example, the illuminance distribution may include a region of illuminance greater than 0% and less than 100% of the maximum illuminance in the illuminance distribution, a region of illuminance greater than 10% and less than 90% of the maximum illuminance in the illuminance distribution, or a region of illuminance greater than 50% and less than 90% of the maximum illuminance in the illuminance distribution.

[0100] Furthermore, in this embodiment, the first member 40a and the second member 40b are arranged so that their lower surfaces are parallel to the neutral plane of the DMD 10. This makes it possible to make the influence of telecentricity symmetrical about the center.

[0101] Fig. 18A is a diagram showing an example of the illuminance distribution of illumination light ILm, and Fig. 18B shows an example in which a rectangular region 34 is exposed using illumination light ILm having the illuminance distribution shown in Fig. 18A. By irradiating the DMD 10 with illumination light ILm having the illuminance distribution shown in Fig. 18A, the illuminance of the illumination light projected onto each light irradiation region 32 can be made different.

[0102] 18B, spot position 342 is a spot position in the light irradiation area 32 onto which illumination light with an illuminance of 90% is projected. Spot position 343 is a spot position in the light irradiation area 32 onto which illumination light with an illuminance of 70% is projected, and spot position 344 is a spot position in the light irradiation area 32 onto which illumination light with an illuminance of 50% is projected. Spot position 345 is a spot position in the light irradiation area 32 onto which illumination light with an illuminance of 30% is projected. Spot position 341 is a spot position in the light irradiation area 32 other than spot positions 342 to 345 onto which illumination light with an illuminance of 100% is projected.

[0103] 18B , of the 61 spot positions, the number of spot positions 342, 343, 344, and 345 is one each, and the number of spot positions 341 is 57. In this case, for example, if the micromirror Ms corresponding to the light irradiation area 32 onto which illumination light with a 50% illuminance is projected is turned OFF, the integrated illuminance in the rectangular area 34 decreases by 0.84% ​​(= 0.5 / (57 + 0.9 + 0.7 + 0.5 + 0.3) × 100). Furthermore, for example, if the micromirror Ms corresponding to the light irradiation area 32 onto which illumination light with a 30% illuminance is projected is turned OFF, the integrated illuminance in the rectangular area 34 decreases by 0.505% (= 0.3 / (57 + 0.9 + 0.7 + 0.5 + 0.3) × 100). Therefore, the integrated illuminance can be corrected with higher resolution than when the integrated illuminance in the rectangular area 34 is corrected by using illumination light having an illuminance distribution in which the illuminance does not change in the X'-axis direction (the illuminance is constant in the X'-axis direction) and turning off some of the micromirrors Ms of the DMD 10. Furthermore, by changing the combination of micromirrors Ms to be turned off, the integrated illuminance can be corrected by a desired amount of change.

[0104] 19A is a diagram illustrating how rectangular regions 34d-34f are exposed. For example, the DMD 10 turns on the micromirrors Ms corresponding to light irradiation regions 210a-210c when rectangular regions 34d-34f are at positions 34D-34F, respectively, and turns on the micromirrors Ms corresponding to light irradiation regions 210d-210f when rectangular regions 34d-34f are at positions 34G-34I, respectively. In this case, rectangular regions 34d-34f move by the idle distance between pulses.

[0105] Here, for example, suppose that, as a result of measuring the integrated illuminance of rectangular area 34d, it is determined that the micromirror Ms corresponding to light irradiation area 210a should be turned off to correct the integrated illuminance. Figure 19(B) is a diagram explaining how rectangular areas 34d to 34f are exposed when the integrated illuminance is corrected.

[0106] 19(B), when rectangular area 34d is at position 34D, the micromirror Ms corresponding to light irradiation area 210a is turned OFF, and when rectangular area 34d is at position 34G, the micromirror Ms corresponding to light irradiation area 210d is turned ON. After rectangular area 34d is at position 34D, substrate P moves the idle distance, and exposure is not performed until rectangular area 34a moves from position 34D to position 34G. Therefore, there will be micromirrors Ms that are not used for exposure.

[0107] The micromirrors Ms not used for exposure are micromirrors Ms that are continuous in the scanning direction for a distance corresponding to the idle distance, and therefore these micromirrors Ms are set to the OFF state. In Fig. 19(B), the light irradiation area corresponding to the micromirrors Ms that are set to the OFF state is indicated by hatching.

[0108] Furthermore, since it is unlikely that the illuminance distribution will change suddenly in the direction perpendicular to the scanning direction (Y-axis direction), the micromirrors Ms are also set to the OFF state continuously in the Y-axis direction. As a result, as shown in Fig. 20, the micromirrors Ms that are set to the OFF state are continuous in the X'-axis direction and the Y'-axis direction, forming a roughly band-shaped range with a width in the scanning direction. In Fig. 20, each square represents a micromirror Ms, and the black squares represent micromirrors Ms that are in the OFF state.

[0109] For example, the spot spacing (also referred to as a grid) is 1 / 10 of the rectangular area 34d (also referred to as a pixel), and the ON and OFF states must be determined for each spot (each micromirror Ms). However, because the pixel size, which is 10 times the spot spacing, is small, the ON and OFF states of the micromirrors Ms may be determined for each pixel size, or the ON and OFF states of the micromirrors Ms may be determined for each larger size (area including multiple pixels), and illuminance measurement may be performed in pixel units (rectangular area units). For example, if an illuminance distribution is applied over 1 / 20 of the length of the DMD 10, illuminance correction with a resolution of 0.1% is possible. Therefore, if there is an overall unevenness in illuminance uniformity of about 2%, an area of ​​that size (about 1 / 20 of the length of the DMD 10) for applying the illuminance distribution is sufficient.

[0110] [Configuration of measurement unit IU] Next, the configuration of the measurement unit IU will be described. Fig. 21 is a view of the substrate holder 4B as seen from the +Z direction. In this embodiment, the measurement unit IU is provided on the opposite side of the substrate holder 4B from the calibration reference unit CU in the X-axis direction. Note that the measurement unit IU may also be provided on the same side as the calibration reference unit CU.

[0111] 21, measurement unit IU has a plurality of measurement devices 400a to 400i arranged in a direction (Y-axis direction) perpendicular to the scanning exposure direction (X-axis direction) of substrate P. The measurement devices 400a to 400i measure the illuminance of each micromirror Ms of the DMD 10 in modules MU1 to MU27. The plurality of measurement devices 400a to 400i can be arranged on substrate holder 4B as shown in FIG. 21, but may also be arranged on XY stage 4A or inside projection unit PLU.

[0112] The measurement devices 400a to 400i are provided, for example, to correspond to the modules MU1 to MU9 included in the exposure module group MU(A). That is, they are arranged so that the pitch P1 between the centers of adjacent modules in the Y-axis direction is equal to the pitch P2 between the centers of adjacent measurement devices in the Y-axis direction. In the following description, unless otherwise necessary, the measurement devices 400a to 400i will be referred to as measurement devices 400. The measurement devices 400 may also be provided to correspond to the modules MU1 to MU27. That is, 27 measurement devices 400 may be arranged in the measurement unit IU. The number of measurement devices 400 is not limited to the number shown in FIG. 21 and may be eight or less, or ten or more. For example, the illuminance of each micromirror Ms of the DMD 10 of the modules MU1 to MU27 can be measured by stepping the XY stage 4A within the stroke of the XY stage 4A, thereby further reducing the number of measurement devices 400.

[0113] 21, the measurement device 400 is tilted in the XY plane by the angle (θk: see FIG. 10) that the DMD 10 is tilted in the XY plane. Note that the measurement device 400 does not have to be disposed at an angle in the XY plane.

[0114] The measurement device 400 includes, for example, a photosensor 402. For example, when one of the micromirrors Ms of the DMD 10 is turned on and the other micromirrors Ms are turned off, the measurement device 400 measures and stores the illuminance (power) of the pattern image (exposure light) projected by the micromirror Ms that is turned on, repeating this process a number of times equal to the number of micromirrors Ms. This allows measurement results to be obtained that associate each micromirror with the illuminance of the exposure light. An aperture plate, such as a pinhole, that limits the measurement point may also be provided on a plane conjugate with the DMD 10.

[0115] The measuring device 400 may include, for example, an image sensor (CCD or CMOS) having pixels corresponding to each micromirror Ms of the DMD 10. In this case, all the micromirrors Ms are turned on, and the illuminance of the pattern image projected by the corresponding micromirror Ms is measured at each pixel.

[0116] Furthermore, the measuring device 400 may include, for example, an image sensor having a number of pixels that is smaller than the number of micromirrors Ms included in the DMD 10. In this case, multiple micromirrors Ms correspond to one pixel of the image sensor. In this case, the illuminance of the pattern image projected by the set of multiple micromirrors Ms is measured at each pixel.

[0117] The integrated illuminance at each position in the Y-axis direction can be calculated based on the measurement results of the measurement device 400. Note that, for example, the measurement device 400 may be an integrated illuminance meter that measures the integrated illuminance at each position in the Y-axis direction. Alternatively, a longitudinal slit may be disposed and the integrated illuminance may be measured by scanning the slit.

[0118] [Configuration of Exposure Control Apparatus] The various processes, including the scanning exposure process, performed in the exposure apparatus EX having the above configuration are controlled by an exposure control apparatus 300. Fig. 22 is a functional block diagram showing the functional configuration of the exposure control apparatus 300 provided in the exposure apparatus EX according to the present embodiment.

[0119] The exposure control device 300 includes a drawing data creation unit 309 , a drawing data storage unit 310 , a drive control unit 304 , and an exposure control unit 306 .

[0120] The drawing data creation unit 309 creates drawing data for a pattern for a display panel to be exposed by each of the multiple modules MUn (n=1 to 27). The drawing data is data for switching each micromirror Ms of the DMD 10 between an ON state and an OFF state.

[0121] The drawing data creation unit 309 creates drawing data, for example, in accordance with the flowchart shown in Fig. 23. First, in step S11, the drawing data creation unit 309 acquires from the measurement device 400 the measurement results of the illuminance of the pattern image projected by each micromirror Ms.

[0122] Next, in step S13, the drawing data creation unit 309 predicts the integrated illuminance at each position in the Y-axis direction based on the measurement results acquired in step S11. For example, the drawing data creation unit 309 predicts the integrated illuminance for each of square regions with a side length of 1 μm that are lined up in a row in the Y-axis direction.

[0123] Next, in step S15, the drawing data creation unit 309 determines the micromirrors Ms to be turned off when exposing each square region, based on the illuminance of the pattern image projected by each micromirror Ms, so that the integrated illuminance of each square region is approximately equal (so that the integrated illuminance distribution is uniform in the Y-axis direction). The illuminance of the pattern image projected by each micromirror Ms may be determined using the measurement results from the measurement device 400 used to predict the integrated illuminance of each square region, or may be calculated based on the distance between the field stop FS and the DMD 10, the size of the DMD 10, etc.

[0124] Next, in step S17, the drawing data creation unit 309 creates drawing data based on the pattern for the display panel and the determination result of step S15. This makes it possible to create drawing data that improves the uniformity of the integrated illuminance distribution in the Y-axis direction.

[0125] The drawing data storage unit 310 stores the drawing data created by the drawing data creation unit 309. The drawing data storage unit 310 sends drawing data MD1 to MD27 for pattern exposure to the DMD 10 of each of the 27 modules MU1 to MU27 shown in Fig. 2. The module MUn (n = 1 to 27) selectively drives the micromirrors Ms of the DMD 10 based on the drawing data MDn to generate a pattern corresponding to the drawing data MDn, and projects and exposes the pattern onto the substrate P.

[0126] The drive control unit 304 creates control data CD1 to CD27 based on the measurement results of the interferometer IFX and sends it to the modules MU1 to MU27. In addition, the drive control unit 304 scans the XY stage 4A in the scanning direction (X-axis direction) at a predetermined speed based on the measurement results of the interferometer IFX.

[0127] During scanning exposure, the modules MU 1 to MU 27 control the driving of the micromirrors Ms of the DMD 10 based on the drawing data MD 1 to MD 27 and the control data CD 1 to CD 27 sent from the drive control unit 304 .

[0128] The exposure control unit (sequencer) 306 controls the transmission of drawing data MD1 to MD27 from the drawing data memory unit 310 to modules MU1 to MU27 and the transmission of control data CD1 to CD27 from the drive control unit 304 in synchronization with the scanning exposure (movement position) of the substrate P.

[0129] The other configurations are the same as those of the first embodiment, and therefore detailed description thereof will be omitted.

[0130] As described above in detail, according to the second embodiment, the exposure apparatus EX is an exposure apparatus that irradiates light from the DMD chip CHP onto the substrate P, which is moved in the scanning direction, to expose the substrate P, and the illumination unit ILU includes an optical integrator 108 onto which illumination light ILm is incident, and a field stop FS that is located on the optical path between the optical integrator 108 and the DMD 10 and forms an illuminance distribution in the scanning direction on the DMD 10. This makes it possible to reduce the amount of change in integrated illuminance caused by turning off one of the micromirrors Ms of the DMD 10, compared to when using illumination light ILm having an illuminance distribution in which the illuminance does not change in the scanning direction. Therefore, the integrated illuminance can be corrected with higher resolution.

[0131] Furthermore, in this embodiment, the exposure apparatus EX is an exposure apparatus that exposes a substrate P with pattern light generated according to drawing data by a DMD 10 having a plurality of micromirrors Ms arranged two-dimensionally, and is equipped with an illumination unit ILU that irradiates the DMD 10 with illumination light ILm, a projection unit PLU that projects an image of the pattern light generated by the DMD 10 onto the substrate P, and an exposure control device 300 that controls the on and off states of the micromirrors Ms. The illumination light ILm has a predetermined illuminance distribution in which the illuminance changes depending on the position in the X'-axis direction (also referred to as the direction corresponding to the scanning direction) that is close to the X-axis direction along which the substrate P is scanned, of the two axial directions (X'-axis direction and Y'-axis direction) that define the array coordinate system X', Y' of the micromirrors Ms. The exposure control device 300 controls the on and off states of the micromirrors Ms based on the illuminance distribution. This reduces the amount of change in the integrated illuminance caused by turning off one of the micromirrors Ms of the DMD 10 compared to when using illumination light ILm having an illuminance distribution in which the illuminance does not change in the X'-axis direction, thereby enabling correction of the integrated illuminance with higher resolution.

[0132] Furthermore, in this embodiment, the illumination unit ILU includes an optical integrator 108 that splits and superimposes the illumination light ILm, and a field stop FS that blocks a portion of the illumination light ILm is provided on the optical path of the illumination light ILm between the optical integrator 108 and the DMD 10. The field stop FS blocks a portion of the illumination light ILm along the Y'-axis direction. This allows the illumination light ILm to have a predetermined illuminance distribution whose illuminance varies depending on the position in the X'-axis direction. The field stop FS may also be disposed between the optical fiber bundle FBn and the optical integrator 108. In this case, for example, if the optical integrator 108 uses a fly's eye lens consisting of multiple small lenses, the field stop FS can be disposed on a plane conjugate with the spatial light modulator (e.g., the DMD 10) of the optical integrator 108 to block a portion of the illumination light ILm that is incident on some of the multiple small lenses. In other words, the field stop FS is disposed only for some of the multiple small lenses.

[0133] In this embodiment, the field stop FS includes a first member 40 a and a second member 40 b, which extend in the Y′-axis direction and are spaced a predetermined distance apart in the X′-axis direction, thereby forming illumination light ILm having the top-hat illuminance distribution shown in FIG.

[0134] In this embodiment, the lower surface of the field stop FS is substantially parallel to the neutral plane including the center points of the micromirrors Ms, which makes it possible to make the influence of telecentricity symmetrical about the center.

[0135] Furthermore, in this embodiment, the exposure apparatus EX includes a substrate holder 4B on which the substrate P is placed, and a measurement device 400 that is provided on the substrate holder 4B and receives at least a portion of the light of the pattern light image generated by the DMD 10 and projected via the projection unit PLU. This makes it possible to measure the illuminance of the illumination light projected onto each light irradiation area 32, and therefore to predict the integrated illuminance at each position in the Y-axis direction.

[0136] Furthermore, in this embodiment, the exposure control device 300 determines which of the micromirrors Ms should be in the OFF state based on the illuminance measurement results obtained by the measurement device 400. By using the illuminance measurement results obtained by the measurement device 400, it is possible to determine which micromirrors Ms can produce the required amount of change in the integrated illuminance.

[0137] In the above embodiment, the first member 40a and the second member 40b of the field stop FS are arranged so that their upper and lower surfaces are parallel to the neutral plane of the DMD 10, but this is not limited to this.

[0138] Fig. 24(A) is a diagram showing another example of the arrangement of the first member 40a and the second member 40b of the field stop FS, and Fig. 24(B) is a diagram showing the illuminance distribution obtained when the first member 40a and the second member 40b are arranged as shown in Fig. 24(A). As shown in Fig. 24(A), the first member 40a and the second member 40b may be arranged so that their lower surfaces are perpendicular to the optical axis of the illumination light ILm.

[0139] In the above embodiment, only one of the first member 40a and the second member 40b of the field stop FS may be disposed. Alternatively, a field stop having an opening may be used. Figure 25(A) is a plan view showing an example of a field stop FS3 having an opening OPN3, Figure 25(B) is a side view of the field stop FS3, Figure 25(C) is a cross-sectional view taken along line A-A in Figure 25(A), Figure 25(D) is a cross-sectional view taken along line B-B in Figure 25(B), and Figure 25(E) is a cross-sectional view taken along line C-C in Figure 25(B).

[0140] As shown in FIG. 25A , an opening OPN3 is formed in the field stop FS3. The illumination light ILm passes through the opening OPN3 of the field stop FS3. The opening OPN3 has a shape that is not circular. The shape of the opening OPN3 of the field stop FS3 may be, for example, a square (rectangle) or a rounded square (rounded rectangle). In this case, the shape of the opening OPN3 is preferably such that, in a cross section perpendicular to the Z direction, two opposing sides SD11 and SD12 and two opposing sides SD13 and SD14 are parallel (the angle θm between the two sides is 0°) or approximately parallel (0°<θm<10°, preferably 0°<θm<7°, more preferably 0°<θm<5°, and even more preferably 0°<θm<1°).

[0141] As shown in Figure 25(C), a portion of the inner wall surface 43 of the opening OPN3 is inclined with respect to the surface (X'Y' plane) of the substrate SB. That is, as can be seen from Figures 25(B), 25(D), and 25(E), the opening OPN3 is larger on the side from which the illumination light ILm exits than on the side from which the illumination light ILm enters. This makes it possible to block a portion of the illumination light ILm and allow a portion of the illumination light ILm to pass through the opening OPN3. The opening OPN3 may be a hole or a slit.

[0142] In the above embodiment, the integrated illuminance is corrected by reducing the amount of exposure light by turning the micromirrors Ms OFF, but this is not limiting. For example, if the micromirrors Ms in the outer peripheral region of the DMD 10 are set not to be used in the exposure process (set to the OFF state), some of the micromirrors Ms in the outer peripheral region may be turned ON to increase the amount of exposure light, thereby correcting the integrated illuminance.

[0143] (Variation 1) FIG. 26A is a diagram illustrating a light-shielding cover CVR1 according to Variation 1. The light-shielding cover CVR1 includes a first portion 401a and a second portion 401b that cover the portion of the frame body FRM located outside the DMD 10 in the Y′-axis direction. In the second embodiment, the illumination light ILm is blocked by the field stop FS in the scanning direction (X-axis direction), so light that generates scattered light (flare light) does not reach the DMD chip CHP. In this case, as shown in FIG. 26A, it is sufficient to at least prevent the illumination light ILm from entering the portion of the frame body FRM located outside the DMD 10 in the Y′-axis direction. Therefore, by disposing the first portion 401a and the second portion 401b that extend in the X′-axis direction and cover the portion of the frame body FRM located outside the DMD 10 in the Y′-axis direction, the generation of scattered light (flare light) by the frame body FRM can be suppressed.

[0144] (Variation 2) FIG. 26B is a diagram illustrating a light-shielding cover CVR2 according to Variation 2. An opening OPN2 is formed in the light-shielding cover CVR2. The width of the opening OPN2 in the X'-axis direction of the light-shielding cover CVR2 is larger than the width of the opening OPN1 in the X'-axis direction of the light-shielding cover CVR. As described above, the illumination light ILm is blocked by the field stop FS in the scanning direction (X-axis direction), so light that generates scattered light (flare light) does not reach the DMD chip CHP. Therefore, if the illumination light ILm can at least be prevented from entering the portion of the frame body FRM located outside the DMD 10 in the Y'-axis direction, the generation of scattered light (flare light) by the frame body FRM can be suppressed. If the illumination light ILm can be prevented from entering the portion of the frame body FRM located outside the DMD 10 in the Y'-axis direction, the width of the opening OPN2 in the X' direction may be increased.

[0145] (Modification 3) In the second embodiment, the field stop FS is subjected to low-reflection treatment so that the reflectance of the illumination light ILm is 20% or less, and preferably 10% or less, but this is not limitative. Fig. 27 is a diagram illustrating a field stop FS1 according to Modification 3.

[0146] The field stop FS1 includes a first member 40a' and a second member 40b'. The field stop FS1 has a reflective surface that reflects the illumination light ILm. Specifically, in the field stop FS1, the lower surface (-Z side surface) 42a of the first member 40a' and the lower surface (-Z side surface) 42b of the second member 40b' are inclined with respect to the neutral plane of the DMD 10. Furthermore, the lower surface 42a of the first member 40a' and the lower surface 42b of the second member 40b' are processed (e.g., by mirror polishing, metal vapor deposition, mirror seal attachment, etc.) so that the reflectance of the illumination light ILm is 50% or more, preferably 75% or more. As a result, the lower surface 42a of the first member 40a' and the lower surface 42b of the second member 40b' reflect the illumination light ILm, thereby suppressing a temperature rise of the field stop FS1 due to the illumination light ILm. The inclination angles of the lower surface 42a of the first member 40a' and the lower surface 42b of the second member 40b' are set so that the illumination light reflected by the lower surfaces 42a and 42b is absorbed by a light absorber (a member other than the projection unit PLU) that absorbs the illumination light. The illumination light reflected by the lower surfaces 42a and 42b may also be absorbed by a light absorber that absorbs the illumination light reflected by the micromirror Ms in the OFF state. In other words, a common light absorber may be used to absorb both the discarded light from the DMD 10 and the light reflected by the lower surfaces 42a and 42b. This reduces the number of components compared to when a light absorber 115 that absorbs the discarded light from the DMD 10 and a light absorber that absorbs the illumination light reflected by the lower surfaces 42a and 42b are separately provided.

[0147] Although not shown, the light-shielding covers CVR, CVR1, and CVR2 may also have a reflective surface that reflects the illumination light ILm. Specifically, the light-shielding covers CVR, CVR1, and CVR2 may have their lower surfaces (surfaces on the -Z side) inclined with respect to the neutral plane of the DMD 10, similar to the field stop FS1, so that the reflectance of the illumination light ILm is 50% or more, preferably 75% or more. This can prevent the temperature of the light-shielding covers CVR, CVR1, and CVR2 from increasing due to the illumination light ILm. The light-shielding covers CVR, CVR1, and CVR2 may also have their lower surfaces absorbed by a light absorber that absorbs the illumination light reflected by the micromirror Ms in the OFF state.

[0148] Third Embodiment In the second embodiment, a pattern glass PG on which a light-shielding pattern LSP is formed may be used instead of the field stop FS. Fig. 28 is a diagram showing a third embodiment in which the pattern glass PG is arranged. The lower diagram in Fig. 28 is a plan view of the pattern glass PG as viewed from the -Z direction.

[0149] As shown in Fig. 28, the pattern glass PG has a light-shielding pattern LSP that blocks part of the illumination light ILm. The light-shielding pattern LSP in Fig. 28 is a random dot pattern.

[0150] The random dot pattern reduces the transmittance of the illumination light ILm in the partial shapes PS located at both ends in the X'-axis direction of the partial shapes PS of the light beam of the illumination light ILm. This makes it possible to form an illuminance distribution in which the illuminance varies depending on the position in the X'-axis direction, as shown in the upper part of Figure 28. Note that the partial shapes PS refer to the circles of confusion (ellipses) of the light beams spread by the NA at the position where the pattern glass PG is placed. By using the pattern glass PG with the pattern density of the light-shielding pattern LSP as a variable, it is easier to adjust the position of the pattern glass PG and control the illuminance distribution compared to the field stop FS.

[0151] The other configurations are the same as those of the second embodiment, and therefore detailed description thereof will be omitted.

[0152] The light-shielding pattern LSP is not limited to a random dot pattern. Figures 29(A) to 30(B) are diagrams showing other examples of the light-shielding pattern LSP. As shown in Figure 29(A), the light-shielding pattern LSP may be a mountain-shaped pattern arranged continuously in the Y'-axis direction. The mountain-shaped pattern allows the pattern density to decrease from both ends of the pattern glass PG toward the center, as shown in Figure 29(A).

[0153] Furthermore, as shown in Fig. 29(B), the light-shielding pattern LSP may be a bar graph-like pattern. Furthermore, as shown in Fig. 30(A), the light-shielding pattern LSP may be a wave-like pattern. Furthermore, as shown in Fig. 30(B), the light-shielding pattern LSP may be a trapezoidal pattern. Note that the shape of the field stop FS when viewed from the bottom side may be the shape of the patterns shown in Figs. 29(A) to 30(B).

[0154] Note that the blur width of the pattern light can be controlled by moving the field stop FS or the pattern glass PG in the optical axis direction of the illumination light ILm. When performing exposure on a layer requiring high illuminance uniformity, the integrated illuminance can be corrected with high resolution. When performing exposure on a layer requiring a large tolerance range for illuminance uniformity, the integrated illuminance can be corrected with low resolution. In this case, when the integrated illuminance is corrected with high resolution, the region where the illuminance is 100% in the illuminance distribution of the illumination light ILm becomes narrower. When the integrated illuminance is corrected with low resolution, the region where the illuminance is 100% in the illuminance distribution of the illumination light ILm becomes wider. Therefore, the integrated illuminance of each exposure target area when the integrated illuminance is corrected with high resolution differs from the integrated illuminance of each exposure target area when the integrated illuminance is corrected with low resolution. To address this issue, the relationship between the differences in the illuminance distribution of the illumination light ILm and the integrated illuminance of each exposure target area can be acquired in advance, and the integrated illuminance of each exposure target area can be adjusted to the desired integrated illuminance.

[0155] In the above-described embodiment and modified example, the field stop FS or the pattern glass PG is used to form an illuminance distribution in which the illuminance of the illumination light ILm varies in the X'-axis direction. However, this is not limiting. For example, the illumination light ILm may be emitted from a single or multiple point light sources, having an illuminance distribution in which the illuminance varies in the X'-axis direction. In this case, the field stop FS and the pattern glass PG can be omitted.

[0156] In the above embodiment and modified examples, the field stop FS or the patterned glass PG has been used for explanation, but the present invention is not limited to these, and other light-reducing members can also be used. As the light-reducing member, a filter that reduces part of the illumination light ILm can be used. Light-blocking members such as the field stop FS and the patterned glass PG are examples of light-reducing members.

[0157] In the second and third embodiments, the illumination light ILm having a top-hat illuminance distribution has been described, but the illumination light ILm may also have an illuminance distribution in which the illuminance is high at both ends and low in the center.

[0158] In the above-described embodiment and modified examples, a heat sink may be disposed on the substrate SB of the DMD chip CHP on the side opposite to the side on which the DMD 10 and frame FRM are mounted, thereby extending the life of the DMD 10 (suppressing a decrease in the reflectance of the DMD 10) and stabilizing the illuminance of the DMD 10.

[0159] Furthermore, in the above-described embodiment and modified example, when the size of the illumination field area is larger than the size of the DMD 10, the light-shielding cover CVR is used to prevent the illumination light ILm from entering the frame body FRM. However, this is not limited to this. For example, on the conjugate plane with the DMD 10, i.e., the incident plane of the MFE lens 108A, an aperture may be disposed for each MFE element using a fine pattern filter or the like to adjust the size of the illumination field area to a size that prevents the illumination light ILm from entering the frame body FRM. This makes it possible to prevent the illumination light ILm from entering the frame body FRM and causing scattered light (flare light).

[0160] Furthermore, for example, an optical system may be added to the illumination unit ILU to form a new conjugate plane with the DMD 10 between the MFE lens 108A and the DMD 10, and the size of the illumination field area on this new conjugate plane may be adjusted to a size such that the illumination light ILm does not enter the frame body FRM.

[0161] In the above embodiment and modified examples, the illumination field area of ​​illumination light ILm emitted from illumination unit ILU is an area that is the size of DMD 10 plus the movable range of DMD 10 in the X'-axis direction and Y'-axis direction, and the size of the illumination field area is larger than the size of DMD 10. Below, a case will be described in which the size of the illumination field area is approximately the same as or smaller than the size of DMD 10.

[0162] [When the size of the illumination field area is approximately the same as the size of the DMD 10] First, a case where the size of the illumination field area is approximately the same as the size of the DMD 10 will be described.

[0163] If the size of the illumination field area is approximately the same as the size of the DMD 10, there is a risk that the illumination light ILm will be incident on the frame body FRM when the DMD 10 is driven (moved) in the X'-axis direction, Y'-axis direction, and θz direction by the fine movement stage. Furthermore, there is a risk that an area on the DMD 10 will not be illuminated by the illumination light ILm. Therefore, if the size of the illumination field area is approximately the same as the size of the DMD 10, by providing a stage that can drive the MFE lens 108A in the θx direction, θy direction, and θz direction, the illumination field area can be shifted in the X-axis direction, Y-axis direction, and θz direction to cause the illumination field area to follow the DMD 10. This makes it possible to prevent the illumination light ILm from being incident on the frame body FRM or to prevent an area on the DMD 10 from being illuminated by the illumination light ILm when the DMD 10 is driven (moved) in the X'-axis direction, Y'-axis direction, and θz direction by the fine movement stage 10S.

[0164] Instead of driving the MFE lens 108A, the position of the illumination field may be corrected by shifting the inclined mirror 112 in the Z-axis direction and rotating it around the Z-axis. Also, a double prism and parallel flat glass may be inserted in the optical path between the MFE lens 108A and the DMD 10 to enable correction of the position of the illumination field.

[0165] [When the size of the illumination field area is smaller than the size of the DMD 10] Next, a case where the size of the illumination field area is set smaller than the size of the DMD 10 will be described. Figure 31 is a diagram for explaining a case where the size of the illumination field area is set smaller than the size of the DMD 10. When the size of the illumination field area is set smaller than the size of the DMD 10, the illumination light ILm does not enter the frame body FRM of the DMD chip CHP, and therefore the occurrence of scattered light (flare light) is suppressed.

[0166] When the size of the illumination field is set smaller than the size of the DMD 10, the micromirrors Ms provided on the DMD 10, which are hatched in FIG. 31 and located on the outer periphery of the DMD 10, are not used for pattern generation (they are always in the OFF state). Therefore, the area excluding the outer periphery of the DMD 10 becomes the pattern generation area 10a. In this case, the size of the illumination field is set so that the pattern generated in the pattern generation area 10a is illuminated by the illumination light ILm. Specifically, the area obtained by adding the size of the pattern generation area 10a to the movable range of the DMD 10 is defined as the illumination field ILRGN (shown by a dashed line). Therefore, the size of the illumination field ILRGN is larger than the size of the pattern generation area 10a but smaller than the size of the DMD 10. By setting the size of the illumination field in this manner, it is possible to expose a pattern onto the substrate P while suppressing the generation of scattered light (flare light).

[0167] In addition, the light-shielding cover CVR may be provided in either case where the size of the illumination field area is approximately the same as the size of the DMD 10 or where the size of the illumination field area is smaller than the size of the DMD 10.

[0168] The above-described embodiment and modifications are preferred examples of the present invention. However, the present invention is not limited to these, and various modifications are possible within the scope of the present invention. Furthermore, the embodiment and modifications can be combined with each other as appropriate.

[0169] 4B Substrate holder 10 DMD 40a, 40a' First member 40b, 40b' Second member 108 Optical integrator 300 Exposure control device 400 Measurement device CHP DMD chip CVR, CVR1, CVR2, CVR3 Light-shielding cover EX Exposure device FS, FS1, FS3 Field stop FRM Frame ILm Illumination light ILU Illumination unit Ms Micromirror OPN1, OPN2, OPN4 Opening in light-shielding cover OPN3 Opening in field stop OPN11 Opening in frame P Substrate PLU Projection unit

Claims

1. A spatial light modulator comprising a substrate, a plurality of mirrors arranged on the surface of the substrate in a plan view, and a frame located above the substrate and surrounding the plurality of mirrors in a plan view, A cover is located above the frame and attached to the spatial light modulator such that its relative position to the spatial light modulator is fixed, and which restricts the incidence of light onto the frame. Equipped with, The first surface of the cover faces the frame, The opening of the cover extends from the first surface to the second surface of the cover opposite to the first surface. Each of the aforementioned multiple mirrors can take on multiple states. Spatial light modulation unit.

2. The spatial light modulation unit according to claim 1, wherein in a direction perpendicular to the surface, the opening overlaps with the gap between adjacent mirrors among the frame and the plurality of mirrors.

3. The spatial light modulation unit according to claim 1, wherein the area of ​​the cross-section on the first surface side of the opening is smaller than the area of ​​the cross-section on the second surface side of the opening, and each of the cross-sections on the first surface side and the cross-section on the second surface side are parallel to the surface.

4. The spatial light modulation unit according to claim 1, wherein the distance between the first surface and the plane containing the center of each of the plurality of mirrors is equal to or greater than the distance between the first surface and the frame.

5. The spatial light modulation unit according to Claim 1, The projector unit includes a projection unit that projects light from the spatial light modulator onto an object, Satisfying tanθin < Lin / Hin, Light from the ON-state mirror among the plurality of mirrors is incident on the projection unit. θin is twice the inclination angle of the reflective surface of the ON-state mirror among the plurality of mirrors from the plane containing the center of each of the plurality of mirrors. Lin is the distance between the edge of the opening and the mirror closest to the edge of the opening among the plurality of mirrors, in the plan view. Hin is the distance between the plane containing the point closest to the substrate on the reflective surface of each of the multiple mirrors that are in the ON state, and the first plane. Exposure apparatus.

6. The spatial light modulation unit according to Claim 1, The projector unit includes a projection unit that projects light from the spatial light modulator onto an object, The distance between the plane containing the center of each of the plurality of mirrors and the first surface is H. In the plan view, the distance between the edge of the opening and the mirror closest to the edge of the opening among the plurality of mirrors is L. The numerical aperture of the projection unit is NA. The refractive index in the optical path from the spatial light modulator to the projection unit is n, and the optical magnification is β. tanθ satisfies NA < L / H, Here, θ NA = sin - 1 (NA × β / n), Exposure apparatus.

7. A spatial light modulation unit according to any one of claims 1 to 4, A lighting unit that illuminates the aforementioned spatial light modulator with illumination light, A stage on which the spatial light modulator is mounted and which is movable in a first direction parallel to the surface and in a second direction intersecting the first direction, Equipped with, The lighting area of ​​the lighting unit is set such that the lighting unit illuminates the plurality of mirrors and the area surrounding the plurality of mirrors. Regardless of the position of the stage within the movable range in the first direction, the plurality of mirrors are illuminated by the illumination area. Regardless of the position of the stage within the movable range in the second direction, the plurality of mirrors are illuminated by the illumination area. Exposure apparatus.

8. An exposure apparatus for exposing an object that is moved in the scanning direction by irradiating the object with light from the spatial light modulator, The aforementioned lighting unit is Optical integrator, The optical integrator and the spatial light modulator are located in the optical path between them, and the optical light modulator is positioned on the spatial light modulator to form an illuminance distribution in the scanning direction, and the optical integrator includes a dimming member. The exposure apparatus according to claim 7.

9. The size of the opening of the dimming member is larger on the side from which the illumination light exits than on the side from which the illumination light enters. The exposure apparatus according to claim 8.

10. The illuminance distribution includes a region of illuminance greater than 0% and less than 50% of the maximum illuminance in the illuminance distribution. The opening of the light-reducing member has a non-circular shape. The illumination light passes through the opening of the dimming member. The exposure apparatus according to claim 8.

11. The inner wall surface of the opening of the light-reducing member is inclined with respect to the surface. The exposure apparatus according to claim 8.

12. The light-reducing member is attached to the spatial light modulator such that its relative position to the spatial light modulator is fixed. The exposure apparatus according to claim 8.

13. The system includes a projection unit that projects light from the spatial light modulator onto the object, The dimming member has a reflective surface that reflects the illumination light, The light-absorbing member is incident on the light from the reflective surface of the light-reducing member and the light from the mirror in the off state among the plurality of mirrors. The exposure apparatus according to claim 8.

14. The reflectance of the frame for light having a peak wavelength within the wavelength range of 10 nm or more and 410 nm or less is greater than the reflectance of one of the multiple mirrors for that light. A spatial light modulation unit according to any one of claims 1 to 4.

15. The substrate has a heat sink located on the side opposite to the side on which the plurality of mirrors and the frame are mounted, The reflectance of the cover for light having a peak wavelength within the wavelength range of 10 nm or more and 410 nm or less is less than the reflectance of one of the multiple mirrors for that light. A spatial light modulation unit according to any one of claims 1 to 4.

16. A spatial light modulator comprising a plurality of elements arranged on a surface in a plan view, and a frame surrounding the plurality of elements in a plan view, A lighting unit that illuminates the aforementioned spatial light modulator with illumination light, A light shield is attached to the spatial light modulator such that its relative position to the spatial light modulator is fixed, and which prevents the illumination light from entering the frame. A projection unit that projects light from the plurality of elements onto an object, A stage on which the spatial light modulator is mounted and which is movable in a plane intersecting the optical axis of the projection unit, Equipped with, The illumination area of ​​the illumination unit is set such that the illumination light illuminates the plurality of elements and the area surrounding the plurality of elements in a plan view. Regardless of the position of the stage within the movable range in the first direction in the plane, the plurality of elements are illuminated by the illumination area. Regardless of the position of the stage within the movable range of the second direction intersecting the first direction in the plane, the plurality of elements are illuminated by the illumination area. Exposure apparatus.

17. The first surface of the light-shielding body faces the frame, The opening of the light-shielding body extends from the first side to the second side of the light-shielding body opposite to the first side, The area of ​​the cross-section on the first side of the opening is smaller than the area of ​​the cross-section on the second side of the opening, and both the cross-section on the first side and the cross-section on the second side are parallel to the surface. The exposure apparatus according to claim 16.

18. The light-shielding body comprises a light-shielding cover having a substantially rectangular opening that allows the illumination light to pass through. The exposure apparatus according to claim 17.

19. The size of the opening of the light-shielding cover, the position of the opening of the light-shielding cover, and the distance between the plane and the first surface in a third direction perpendicular to the plane containing the center of each of the plurality of elements are set so as not to block the incidence of the illumination light onto the plurality of elements and not to block the light reflected by the off-state elements among the plurality of elements. The exposure apparatus according to claim 18.

20. The illumination light is incident on the plurality of elements at an oblique angle. The opening of the light-shielding cover has two sides that face each other in a fourth direction substantially parallel to the scanning direction and extend in a fifth direction substantially perpendicular to the fourth direction in the horizontal plane. The first distance in the fourth direction between one of the two sides of the opening of the light-shielding cover, which is on the side where the illumination light is incident, and the plurality of elements is longer than the second distance in the fourth direction between the other of the two sides of the opening of the light-shielding cover and the plurality of elements. The exposure apparatus according to claim 19.

21. Let the first distance be Lin, the distance in the third direction between the plane and the first portion of the light-shielding cover having one side be Hin, and let the angle of incidence at which the illumination light enters the plurality of elements be θin, then satisfy tanθin < Lin / Hin. The exposure apparatus according to claim 20.

22. The light shielding body is A dimming member that dims at least a portion of the light irradiated onto the spatial light modulator and forms an illuminance distribution along a third direction corresponding to the scanning direction via the projection unit in at least a portion of the illumination area on the plurality of elements, A light-shielding cover that at least prevents the illumination light from entering the portion of the frame located outside the plurality of elements in a fifth direction perpendicular to a fourth direction substantially parallel to the scanning direction in the horizontal plane, The exposure apparatus according to claim 16, comprising:

23. The reflectance of the illumination light on the first surface of the dimming member opposite to the spatial light modulator is 50% or more. The first surface is inclined with respect to a plane containing the center of each of the plurality of elements. The exposure apparatus according to claim 22.

24. The reflectance of the illumination light on the second surface is 20% or less, The side of the light-shielding cover opposite to the spatial light modulator has a reflectivity of 50% or more of the illumination light and is inclined with respect to the plane containing the center of each of the plurality of elements. An exposure apparatus according to any one of claims 18 to 23.